Lead-Free Perovskite Nanowire Array Photodetectors with Drastically Improved Stability in Nanoengineering Templates

Recent advances in two-dimensional perovskite materials for light-emitting diodes

Light-emitting diodes (LEDs) are an indispensable part of our daily life. After being studied for a few decades, this field still has some room for improvement. In this regard, perovskite materials may take the leading role. In recent years, LEDs have become a most explored topic, owing to their various applications in photodetectors, solar cells, lasers, and so on. Noticeably, they exhibit significant characteristics in developing LEDs. The luminous efficiency of LEDs can be significantly enhanced by the combination of a poor illumination LED with low-dimensional perovskite. In 2014, the first perovskite-based LED was illuminated at room temperature. Furthermore, two-dimensional (2D) perovskites have enriched this field because of their optical and electronic properties and comparatively high stability in ambient conditions. Recent and relevant advancements in LEDs using low-dimensional perovskites including zero-dimensional to three-dimensional materials is reported. The major focus of this article is based on the 2D perovskites and their heterostructures (i.e., a combination of 2D perovskites with transition metal dichalcogenides, graphene, and hexagonal boron nitride). In comparison to 2D perovskites, heterostructures exhibit more potential for application in LEDs. State-of-the-art perovskite-based LEDs, current challenges, and prospects are also discussed.

Cyano-Coordinated Tin Halide Perovskites for Wearable Health Monitoring and Weak Light Imaging

Low-toxicity tin halide perovskites with excellent optoelectronic properties are promising candidates for photodetection. However, tin halide perovskite photodetectors have suffered from high dark current owing to uncontrollable Sn2+ oxidation. Here, 2-cyanoethan-1-aminium iodide (CNI) is introduced in CH(NH2)2SnI3 (FASnI3) perovskite films to inhibit Sn2+ oxidation by the strong coordination interaction between the cyano group (C≡N) and Sn2+. Consequently, FASnI3-CNI films exhibit reduced nonradiative recombination and lower trap density. The self-powered photodetector based on FASnI3-CNI exhibits low dark current (1.04 × 10-9 A cm-2), high detectivity (2.2 × 1013 Jones at 785 nm), fast response speed (2.62 µs), and good stability. Mechanism studies show the increase in the activation energy required for thermal emission and generated carriers, leading to a lower dark current in the FASnI3-CNI photodetector. In addition, flexible photodetectors based on FASnI3-CNI, exhibiting high detectivity and fast response speed, are employed in wearable electronics to monitor the human heart rate under weak light and zero bias conditions. Finally, the FASnI3-CNI perovskite photodetectors are integrated with a 32 × 32 thin-film transistor backplane, capable of ultraweak light (170 nW cm-2) real-time imaging with high contrast, and zero power consumption, demonstrating the great potential for image sensor applications.

Progress in Advanced Infrared Optoelectronic Sensors

Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.

Improving the Operational Lifetime of Metal-Halide Perovskite Light-Emitting Diodes with Dimension Control and Ligand Engineering

Perovskite light-emitting diodes (LEDs) have emerged as one of the most propitious candidates for next-generation lighting and displays, with the highest external quantum efficiency (EQE) of perovskite LEDs already surpassing the 20% milestone. However, the further development of perovskite LEDs primarily relies on addressing operational instability issues. This Perspective examines some of the key factors that impact the lifetime of perovskite LED devices and some representative reports on recent advancements aimed at improving the lifetime. Our analysis underscores the significance of "nano" strategies in achieving long-term stable perovskite LEDs. Significant efforts must be directed toward proper device encapsulation, perovskite material passivation, interfacial treatment to address environment-induced material instability, bias-induced phase separation, and ion migration issues.

An intrinsic electrical conductivity study of perovskite powders MAPbX3 (X = I, Br, Cl) to investigate its effect on their photovoltaic performance

An investigation into the intrinsic electrical conductivity of perovskite powders MAPbX3, where X represents iodine (I), bromine (Br), or chlorine (Cl), was conducted to explore its impact on their photovoltaic performance. Results revealed that MAPbCl3 demonstrated light absorption ability in the ultraviolet and visible regions, while MAPbBr3 showed capacity for light absorption at longer wavelengths in the visible spectrum. On the other hand, MAPbI3 exhibited good absorption at longer wavelengths, indicating its ability to absorb light in the near-infrared region. The optical bandgap of each perovskite was determined to be 2.90 eV for MAPbCl3, 2.20 eV for MAPbBr3, and 1.47 eV for MAPbI3. The electrical conductivities of these powders were measured in-plane using the four-probe method and through-plane by electrochemical impedance spectroscopy (EIS). Electrochemical impedance spectroscopy (EIS) studies revealed a significant change in the conductivity of the MAPbI3 perovskite at temperatures between 80 °C and 100 °C. This change could be attributed to structural modifications induced when the temperature exceeds these values. The through-plane conductivity changed from 3 × 10-8 S cm-1 at 60 °C to approximately 6 × 10-5 S cm-1 at 120 °C and around 2 × 10-3 S cm-1 at 200 °C. Meanwhile, the sheet conductivity (in-plane conductivity) measurements performed at ambient temperature reveal that sheet conductivities are 489 × 103 S m-1, 486 × 103 S m-1 and 510 × 103 S m-1 for MAPbBr3, MAPbCl3 and MAPbI3, respectively. This study provides valuable insights for optimizing the performance of perovskite solar cells. Understanding how dopants influence the electrical conductivity and photovoltaic properties of the perovskite material, this work will enable researchers to design and engineer more efficient and stable solar cell devices based on MAPbX3 perovskites.

Optimized absorption of light in perovskite nanowire solar cells

Metal halide perovskite nanowires (PrvNWs) have recently emerged as an interesting path for nanostructured solar cells. Here, we model the absorption of light in PrvNW arrays for varying diameter and length of the PrvNWs and period for the array by solving the Maxwell equations. For long enough bare PrvNW arrays, we find that the optimum diameter is fixed to that which places the absorption peak from the HE11waveguide mode in the PrvNWs to the vicinity of the bandgap wavelength. In contrast, when we include a transparent conductive oxide (TCO) top contact layer, the optimum diameter shifts to a larger value by 100 nm. The origin of this shift is traced to a reduced reflection at the interface between the TCO layer and the PrvNW array when the PrvNW's diameter is larger. Overall, we find that 1500 nm long PrvNWs can reach 90% of the broadband absorption potential, making this system of high interest for photovoltaics.

2D Ruddlesden-Popper Sn-Based Perovskite Weak Light Detector for Image Transmission and Reflection Imaging

2D Ruddlesden-Popper Sn-based perovskite has excellent optoelectronic properties and weak halide ion migration characteristics, making it an ideal candidate for weak light detection, which has great potential in light communication, and medical applications. Although Sn-based perovskite photodetectors are developed, weak light detection is not demonstrated yet. Herein, a high-performance self-powered photodetector with the capability to detect ultra-weak light signals is designed based on vertical PEA2 SnI4 /Si nanowires heterojunction. Due to the low dark current and high light absorption efficiency, the devices present a remarkable responsivity of 42.4 mA W-1 , a high detectivity of 8 × 1011 Jones, and an ultralow noise current of 2.47 × 10-13 A Hz-1/2 . Especially, the device exhibits a high on-off current ratio of 18.6 at light signals as low as 4.60 nW cm-2 , revealing the capacity to detect ultra-weak light. The device is applied as a signal receiver and realized image transmission in light communication system. Moreover, high-resolution reflection imaging and multispectral imaging are obtained using the device as the sensor in the imaging system. These results reveal that 2D PEA2 SnI4 -based self-powered photodetectors with low-noise current possess enormous potential in future weak light detection.

Geometric Shape Recognition with an Ultra-High Density Perovskite Nanowire Array-Based Artificial Vision System

Artificial vision systems (AVS) have potential applications in visual prosthetics and artificially intelligent robotics, and they require a preprocessor and a processor to mimic human vision. Halide perovskite (HP) is a promising preprocessor and processor due to its excellent photoresponse, ubiquitous charge migration pathways, and innate hysteresis. However, the material instability associated with HP thin films hinders their utilization in physical AVSs. Herein, we have developed ultrahigh-density arrays of robust HP nanowires (NWs) rooted in a porous alumina membrane (PAM) as the active layer for an AVS. The NW devices exhibit gradual photocurrent change, responding to changes in light pulse duration, intensity, and number, and allow contrast enhancement of visual inputs with a device lifetime of over 5 months. The NW-based processor possesses temporally stable conductance states with retention >105 s and jitter <10%. The physical AVS demonstrated 100% accuracy in recognizing different shapes, establishing HP as a reliable material for neuromorphic vision systems.

Quantum dots derived from two-dimensional transition metal dichalcogenides: synthesis, optical properties and optoelectronic applications

Zero-dimensional transition metal dichalcogenides (TMD) quantum dots (QDs) have attracted a lot of attention due to their interesting fundamental properties and various applications. Compared to TMD monolayers, the QD counterpart exhibits larger values for direct transition energies, exciton binding energies, absorption coefficient, luminescence efficiency, and specific surface area. These characteristics make them useful in optoelectronic devices. In this review, recent exciting progress on synthesis, optical properties, and applications of TMD QDs is highlighted. The first part of this article begins with a brief description of the synthesis approaches, which focus on microwave-assistant heating and pulsed laser ablation methods. The second part introduces the fundamental optical properties of TMD QDs, including quantum confinement in optical absorption, excitation-wavelength-dependent photoluminescence, and many-body effects. These properties are highlighted. In the third part, we discuss lastest advancements in optoelectronic devices based on TMD QDs These devices include light-emitting diodes, solar cells, photodetectors, optical sensors, and light-controlled memory devices. Finally, a brief summary and outlook will be provided.

Correlation between Single-Photon Emission and Size of Cesium Lead Bromide Perovskite Nanocrystals

Emission photon statistics of semiconductor nanocrystal quantum dots (QDs), including lead halide perovskite nanocrystals (PNCs), are important fundamental and practical optical properties. Single QDs exhibit high-probability single-photon emission owing to the efficient Auger recombination between generated excitons. Because the recombination rate depends on QD size, single-photon emission probability should be size-dependent. Previous studies have researched QDs smaller than their exciton Bohr diameters (twice the Bohr radius of excitons). Here, we investigated the relationship between the single-photon emission behavior and size of CsPbBr₃ PNCs to elucidate their size threshold. Simultaneous single-nanocrystal spectroscopy and atomic force microscopy observations on single PNCs with approximately 5-25 nm edge length showed that those smaller than approximately 10 nm, which had size-dependent photoluminescence (PL) spectral shifts, exhibited high-probability single-photon emissions, which decreased linearly with PNC volume. Novel single-photon emission, size, and PL peak correlations of PNCs are important for understanding the relationship between single-photon emission and quantum confinement.

In Situ Super-Hindrance-Triggered Multilayer Cracks for Random Lasing in π-Functional Nanopolymer Films

In situ self-assembly of semiconducting emitters into multilayer cracks is a significant solution-processing method to fabricate organic high- Q lasers. However, it is still difficult to realize from conventional conjugated polymers. Herein, we create the molecular super-hindrance-etching technology, based on the π-functional nanopolymer PG-Cz, to modulate multilayer cracks applied in organic single-component random lasers. Massive interface cracks are formed by promoting interchain disentanglement with the super-steric hindrance effect of π-interrupted main chains, and multilayer morphologies with photonic-crystal-like ordering are also generated simultaneously during the drop-casting method. Meanwhile, the enhancement of quantum yields on micrometer-thick films ( Φ = 40% to 50%) ensures high-efficient and ultrastable deep-blue emission. Furthermore, a deep-blue random lasing is achieved with narrow linewidths ~0.08 nm and high-quality factors Q ≈ 5,500 to 6,200. These findings will offer promising pathways of organic π-nanopolymers for the simplification of solution processes applied in lasing devices and wearable photonics.

Three-Dimensional Nanopillar Arrays-Based Efficient and Flexible Perovskite Solar Cells with Enhanced Stability

Perovskite nanopillars (PNPs) are propitious candidates for solar irradiation harvesting and are potential alternatives to thin films in flexible photovoltaics. To realize efficient daily energy output, photovoltaics must absorb sunlight over a broad range of incident angles and wavelengths congruent with the solar spectrum. Herein, we report highly periodic three-dimensional (3D) PNP-based flexible photovoltaics possessing a core-shell structure. The vertically aligned PNP arrays demonstrate up to 95.70% and 75.10% absorption at peak and under an incident angle of 60°. The efficient absorption and the orthogonal carrier collection facilitate an external quantum efficiency of 84.0%-89.18% for broadband wavelength. PNPs have been successfully implemented in flexible solar cells. The porous alumina membrane protects PNPs against water and oxygen intrusion and thereby imparts robustness to photovoltaic devices. Meanwhile, the excellent tolerance to mechanical stress/strain enables our unique PNP-based device to provide efficient solar-to-electricity conversion while undergoing mechanical bending.

Defect Passivation on Lead-Free CsSnI3 Perovskite Nanowires Enables High-Performance Photodetectors with Ultra-High Stability

In recent years, Pb-free CsSnI₃ perovskite materials with excellent photoelectric properties as well as low toxicity are attracting much attention in photoelectric devices. However, deep level defects in CsSnI₃, such as high density of tin vacancies, structural deformation of SnI₆^- octahedra and oxidation of Sn²⁺ states, are the major challenge to achieve high-performance CsSnI₃-based photoelectric devices with good stability. In this work, defect passivation method is adopted to solve the above issues, and the ultra-stable and high-performance CsSnI₃ nanowires (NWs) photodetectors (PDs) are fabricated via incorporating 1-butyl-2,3-dimethylimidazolium chloride salt (BMIMCl) into perovskites. Through materials analysis and theoretical calculations, BMIM⁺ ions can effectively passivate the Sn-related defects and reduce the dark current of CsSnI₃ NW PDs. To further reduce the dark current of the devices, the polymethyl methacrylate is introduced, and finally, the dual passivated CsSnI₃ NWPDs show ultra-high performance with an ultra-low dark current of 2 × 10^-11 A, a responsivity of up to 0.237 A W^-1, a high detectivity of 1.18 × 10¹² Jones and a linear dynamic range of 180 dB. Furthermore, the unpackaged devices exhibit ultra-high stability in device performance after 60 days of storage in air (25 °C, 50% humidity), with the device performance remaining above 90%.

New Lead-free Organic-Inorganic Hybrid Semiconductor Single Crystals for a UV-Vis-NIR Broadband Photodetector

Organic-inorganic hybrid semiconducting (OIHS) materials, which can detect broader spectral regions, are highly desired in several applications including biomedical imaging, night vision, and optical communications. Although lead (Pb)-halide perovskites have reached a mature research stage, high toxicity of Pb hinders their large-scale viability. Tin (Sn)-based perovskites are the most common OIHS broadband light absorbers that replace toxic Pb; however, they are extremely unstable due to the notorious Sn2+ oxidation. Herein, a novel, non-toxic, and solution-processed millimeter-sized OIHS single crystal [Ga(C3H7NO)6](I3)3 has been grown at room temperature. Both the absorption measurement and density functional theory calculations have confirmed a narrow indirect band gap of 1.32 eV. The corresponding photodetector based on this single crystal demonstrated excellent performance including an ultraviolet-visible-near infrared (UV-vis-NIR) response between 325 and 1064 nm, fast response time (trise/tdecay = 3.8 ms/5.4 ms), and profound air storage stability (41 h), thus outperforming most common photodetectors based on Sn-based perovskites. This work not only provides a profound understanding of this novel organic-inorganic single-crystal material but also demonstrates its great potential to realize the high-performance UV-vis-NIR broadband photodetectors.

Numerical Simulation and Optimization of Highly Stable and Efficient Lead-Free Perovskite FA1-xCsxSnI3-Based Solar Cells Using SCAPS

Formamidinium tin iodide (FASnI3)-based perovskite solar cells (PSCs) have achieved significant progress in the past several years. However, these devices still suffer from low power conversion efficiency (PCE=6%) and poor stability. Recently, Cesium (Cs)-doped Formamidinium tin iodide (FA1−xCsxSnI3) showed enhanced air, thermal, and illumination stability of PSCs. Hence, in this work, FA1−xCsxSnI3 PSCs have been rigorously studied and compared to pure FASnI3 PSCs using a solar cell capacitance simulator (SCAPS) for the first time. The aim was to replace the conventional electron transport layer (ETL) TiO2 that reduces PSC stability under solar irradiation. Therefore, FA1−xCsxSnI3 PSCs with different Cs contents were analyzed with TiO2 and stable ZnOS as the ETLs. Perovskite light absorber parameters including Cs content, defect density, doping concentration and thickness, and the defect density at the interface were tuned to optimize the photovoltaic performance of the PSCs. The simulation results showed that the device efficiency was strongly governed by the ETL material, Cs content in the perovskite and its defect density. All the simulated devices with ZnOS ETL exhibited PCEs exceeding 20% when the defect density of the absorber layer was below 1015 cm−3, and deteriorated drastically at higher values. The optimized structure with FA75Cs25SnI3 as light absorber and ZnOS as ETL showed the highest PCE of 22% with an open circuit voltage Voc of 0.89 V, short-circuit current density Jsc of 31.4 mA·cm−2, and fill factor FF of 78.7%. Our results obtained from the first numerical simulation on Cs-doped FASnI3 could greatly increase its potential for practical production.

Epitaxial Growth of Lead-Free 2D Cs3 Cu2 I5 Perovskites for High-Performance UV Photodetectors

The all-inorganic lead-free Cu-based halide perovskites represented by the Cs-Cu-I system, have sparked extensive interest recently due to their impressive photophysical characteristics. However, successive works on their potential application in light emission diodes and photodetectors rely on tiny polycrystals, in which the grain boundaries and defects may lead to the performance degradation of their embodied devices. Here, 2D all-inorganic perovskite Cs₃ Cu₂ I₅ single crystals are epitaxially grown on mica substrates, with a thickness down to 10 nm. The strong blue emission of the Cs₃ Cu₂ I₅ flakes may originate from the radiative transition of self-trapped excitons associated with a large Stocks shift and long (microsecond) decay time. Ultravioelt (UV) photodetectors based on individual Cs₃ Cu₂ I₅ nanosheets are fabricated via a swift and etching-free dry transfer approach, which reveal a high responsivity of 3.78 A W^-1 (270 nm, 5 V bias), as well as a fast response speed (τ_rise  ≈163 ms, τ_decay  ≈203 ms), outperforming congeneric UV sensors based on other 2D metal halide perovskites. This work therefore sheds light on the fabrication of green optoelectronic devices based on lead-free 2D perovskites, vital for the sustainable development of photoelectric technology.

Vertical Heterogeneous Integration of Metal Halide Perovskite Quantum-Wires/Nanowires for Flexible Narrowband Photodetectors

Charge collection narrowing (CCN) has been reported to be an efficient strategy to achieve optical filter-free narrowband photodetection (NPD) with metal halide perovskite (MHP) single crystals. However, the necessity of utilizing thick crystals in CCN limits their applications in large scale, flexible, self-driven, and high-performance optoelectronics. Here, for the first time, we fabricate vertically integrated MHP quantum wire/nanowire (QW/NW) array based photodetectors in nanoengineered porous alumina membranes (PAMs) showing self-driven broadband photodetection (BPD) and NPD capability simultaneously. Two cutoff detection edges of the NPDs are located at around 770 and 730 nm, with a full-width at half-maxima (fwhm) of around 40 nm. The optical bandgap difference between the NWs and the QWs, in conjunction with the high carrier recombination rate in QWs, contributes to the intriguing NPD performance. Thanks to the excellent mechanical flexibility of the PAMs, a flexible NPD is demonstrated with respectable performance. Our work here opens a new pathway to design and engineer a nanostructured MHP for novel color selective and full color sensing devices.

Perovskite microcells fabricated using swelling-induced crack propagation for colored solar windows

Perovskite microcells have a great potential to be applied to diverse types of optoelectronic devices including light-emitting diodes, photodetectors, and solar cells. Although several perovskite fabrication methods have been researched, perovskite microcells without a significant efficiency drop during the patterning and fabrication process could not be developed yet. We herein report the fabrication of high-efficiency perovskite microcells using swelling-induced crack propagation and the application of the microcells to colored solar windows. The key procedure is a swelling-induced lift-off process that leads to patterned perovskite films with high-quality interfaces. Thus, a power conversion efficiency (PCE) of 20.1 % could be achieved with the perovskite microcell, which is nearly same as the PCE of our unpatterned perovskite photovoltaic device (PV). The semi-transparent PV based on microcells exhibited a light utilization efficiency of 4.67 and a color rendering index of 97.5 %. The metal–insulator–metal structure deposited on the semi-transparent PV enabled to fabricate solar windows with vivid colors and high color purity.

Perovskite microcells can be applied to various types of optoelectronic devices. Here, authors report high efficiency perovskite microcells fabricated using swelling-induced crack propagation and demonstrate solar windows using the microcells.

A Flexible Plasmonic-Membrane-Enhanced Broadband Tin-Based Perovskite Photodetector

Lead-free perovskite quantum dots (QDs) have been widely investigated for optoelectronic devices because of their excellent electrical and optical properties. However, optoelectronic devices based on such lead-free perovskites still have much lower performance than those made of Pb-based counterparts. Herein, we developed a lead-free photodetector with an enhanced broadband spectral response ranging from 300 to 630 nm. By balancing plasmonic near-field enhancement and surface energy quenching through precisely controlling the thickness of Al₂O₃ spacer between the CsSnBr₃ QDs and silver nanoparticle membrane, the photodetector with 5 nm thick Al₂O₃ experiences a maximum photocurrent enhancement of 6.5-fold at 410 nm, with a responsivity of 62.3 mA/W and detectivity of 4.27 × 10¹¹ Jones. Moreover, its photocurrent shows a negligible decrease after 100 cycles of bending, which is ascribed to the tension-offset induced by the self-assembled nanoparticle membrane. The proposed plasmonic membrane enhancement provides a great potential for high-performance perovskite optoelectronic devices.

Perovskite photodetectors and their application in artificial photonic synapses

Organic-inorganic hybrid perovskites exhibit superior optoelectrical properties and have been widely used in photodetectors. Perovskite photodetectors with excellent detectivity have great potential for developing artificial photonic synapses which can merge data transmission and storage. They are highly desired for next generation neuromorphic computing. The recent progress of perovskite photodetectors and their application in artificial photonic synapses are summarized in this review. Firstly, the key performance parameters of photodetectors are briefly introduced. Secondly, the recent research progress of photodetectors including photoconductors, photodiodes, and phototransistors is summarized. Finally, the applications of perovskite photodetectors in artificial photonic synapses in recent years are highlighted. All these demonstrate the great potential of perovskite photonic synapses for the development of artificial intelligence.

Artificial Synapses Based on Lead-Free Perovskite Floating-Gate Organic Field-Effect Transistors for Supervised and Unsupervised Learning

Synaptic devices are expected to overcome von Neumann's bottleneck and served as one of the foundations for future neuromorphic computing. Lead halide perovskites are considered as promising photoactive materials but limited by the toxicity of lead. Herein, lead-free perovskite CsBi₃I₁₀ is utilized as a photoactive material to fabricate organic synaptic transistors with a floating-gate structure for the first time. The devices can maintain the I_light/I_dark ratio of 10³ for 4 h and have excellent stability within the 30 days test even without encapsulation. Synaptic functions are successfully simulated. Notably, by combining the decent charge transport property of the organic semiconductor and the excellent photoelectronic property of CsBi₃I₁₀, synaptic performance can be realized even with an operating voltage as low as -0.01 V, which is rare among floating-gate synaptic transistors. Furthermore, artificial neural networks are constructed. We propose a new method that can simulate the synaptic weight value in multiple digit form to achieve complete gradient descent. The image recognition test exhibits thrilling recognition accuracy for both supervised (91%) and unsupervised (81%) classifications. These results demonstrate the great potential of floating-gate organic synaptic transistors in neuromorphic computing.

Revealing photoluminescence mechanisms of single CsPbBr3/Cs4PbBr6 core/shell perovskite nanocrystals

CsPbBr3 nanocrystals (NCs) encapsulated by Cs4PbBr6 has attracted extensive attention due to good stability and high photoluminescence (PL) emission efficiency. However, the origin of photoluminescence (PL) emission from CsPbBr3/Cs4PbBr6 composite materials has been controversial. In this work, we prepare CsPbBr3/Cs4PbBr6 core/shell nanoparticles and firstly study the mechanism of its photoluminescence (PL) at the single-particle level. Based on photoluminescence (PL) intensity trajectories and photon antibunching measurements, we have found that photoluminescence (PL) intensity trajectories of individual CsPbBr3/Cs4PbBr6 core/shell NCs vary from the uniform longer periods to multiple-step intensity behaviors with increasing excitation level. Meanwhile, second-order photon correlation functions exhibit single photon emission behaviors especially at lower excitation levels. However, the PL intensity trajectories of individual Cs4PbBr6 NCs demonstrate apparent "burst-like" behaviors with very high values of g 2(0) at any excitation power. Therefore, the distinguishable emission statistics help us to elucidate whether the photoluminescence (PL) emission of CsPbBr3/Cs4PbBr6 core/shell NCs stems from band-edge exciton recombination of CsPbBr3 NCs or intrinsic Br vacancy states of Cs4PbBr6 NCs. These findings provide key information about the origin of emission in CsPbBr3/Cs4PbBr6 core/shell nanoparticles, which improves their utilization in the further optoelectronic applications.

Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention

Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three types of methyl ammonium lead halide perovskites (MAPbX₃; X = Cl, Br, I) have been explored. A trade-off between device switching speed and retention time was intriguingly found. Ultrafast switching speed (200 ps) for monocrystalline MAPbI₃ and ~7 × 10⁹ s ultralong extrapolated retention time for polycrystalline MAPbCl₃ NW devices were obtained. Further, first-principles calculation revealed that Ag diffusion energy barrier increases when lattice size shrinks from MAPbI₃ to MAPbCl₃, culminating in the trade-off between the device switching speed and retention time.

Ultrafast, Self-Powered, and Charge-Transport-Layer-Free Ultraviolet Photodetectors Based on Sequentially Vacuum-Evaporated Lead-Free Cs2AgBiBr6 Thin Films

Researchers have focused on perovskite-based ultraviolet photodetectors due to their significance in fundamental scientific and practical applications. However, toxicity and instability hold back their mass production and commercialization. The lead-free Cs₂AgBiBr₆ double perovskite, promised to be an alternative, is fabricated mostly by spin coating, which restricts the practical application in high-resolution image sensors. Herein, we demonstrate a sequential vacuum evaporation method for the fabrication of the Cs₂AgBiBr₆ film. A self-powered ultraviolet photodetector based on the evaporated Cs₂AgBiBr₆ thin film is further constructed without any carrier-transport layers, for the first time. The best-performing device has a high on/off ratio of 6.6 × 10³, and its response time is fast, less than 6.13 μs. Moreover, the as-prepared devices exhibit salient stability under harsh operational conditions (continuous illumination, high temperature, and humidity). In addition, the pixelated image sensor containing a 25 × 25 Cs₂AgBiBr₆ photodetector array achieves a proof-of-concept special pattern recognition. Our work paves the way for new-generation ultraviolet image sensors composed of environmentally friendly and high-performance perovskite photodetector arrays.

Oriented Halide Perovskite Nanostructures and Thin Films for Optoelectronics

Oriented semiconductor nanostructures and thin films exhibit many advantageous properties, such as directional exciton transport, efficient charge transfer and separation, and optical anisotropy, and hence these nanostructures are highly promising for use in optoelectronics and photonics. The controlled growth of these structures can facilitate device integration to improve optoelectronic performance and benefit in-depth fundamental studies of the physical properties of these materials. Halide perovskites have emerged as a new family of promising and cost-effective semiconductor materials for next-generation high-power conversion efficiency photovoltaics and for versatile high-performance optoelectronics, such as light-emitting diodes, lasers, photodetectors, and high-energy radiation imaging and detectors. In this Review, we summarize the advances in the fabrication of halide perovskite nanostructures and thin films with controlled dimensionality and crystallographic orientation, along with their applications and performance characteristics in optoelectronics. We examine the growth methods, mechanisms, and fabrication strategies for several technologically relevant structures, including nanowires, nanoplates, nanostructure arrays, single-crystal thin films, and highly oriented thin films. We highlight and discuss the advantageous photophysical properties and remarkable performance characteristics of oriented nanostructures and thin films for optoelectronics. Finally, we survey the remaining challenges and provide a perspective regarding the opportunities for further progress in this field.

Lead-Free Perovskite Photodetectors: Progress, Challenges, and Opportunities

State-of-the-art photodetectors which apply hybrid perovskite materials have emerged as powerful candidates for next-generation light sensing. Among them, lead-based ones are the most popular beyond doubt on account of their unique and superior optoelectronic properties. Nevertheless, trade-off toward commercialization exists between nontoxicity and high performance, with the poor stability of lead-based perovskites, indicating that it is indispensable to substitute lead with nontoxic element meanwhile bringing about a comparable figure of merit of photodetectors and relatively long-term stability. Herein, recent advances in lead-free perovskite photodetectors are reviewed, analyzing the principle while designing new materials and highlighting some remarkable progress, which are comparable, even superior, to lead-based photodetectors. Furthermore, their potential strategy in optical communication, image sensing, narrowband photodetection, etc., is examined and a perspective on developing new materials and photodetectors with superior properties for more practical applications is provided.

The Effects of Temperature on the Growth of a Lead-Free Perovskite-Like (CH3NH3)3Sb2Br9 Single Crystal for An MSM Photodetector Application

We have fabricated a photodetector based on (CH₃NH₃)₃Sb₂Br₉ (MA₃Sb₂Br₉) lead-free perovskite-like single crystal, which plays an important role in the optoelectronic characteristics of the photodetector as a perovskite-like photosensitive layer. Here, MA₃Sb₂Br₉ single crystals were synthesized by an inverse temperature crystallization process with a precursor solution at three different growth temperatures, 60 °C, 80 °C, and 100 °C. As a result, a MA₃Sb₂Br₉ single crystal with an optimum growth temperature of 60 °C presented a low trap density of 2.63 × 10¹¹ cm^-3, a high charge carrier mobility of 0.75 cm² V^-1 s^-1, and excellent crystal structure and optical absorption properties. This MA₃Sb₂Br₉ perovskite-like photodetector displayed a low dark current of 8.09 × 10^-9 A, high responsivity of 0.113 A W^-1, and high detectivity of 4.32 × 10¹¹ Jones.

Down-Scalable and Ultra-fast Memristors with Ultra-high Density Three-Dimensional Arrays of Perovskite Quantum Wires

With strikingly high speed, data retention ability and storage density, resistive RAMs have emerged as a forerunning nonvolatile memory. Here we developed a Re-RAM with ultra-high density array of monocrystalline perovskite quantum wires (QWs) as the switching matrix with a metallic silver conducting pathway. The devices demonstrated high ON/OFF ratio of ∼10⁷ and ultra-fast switching speed of ∼100 ps which is among the fastest in literature. The devices also possess long retention time of over 2 years and record high endurance of ∼6 × 10⁶ cycles for all perovskite Re-RAMs reported. As a concept proof, we have also successfully demonstrated a flexible Re-RAM crossbar array device with a metal-semiconductor-insulator-metal design for sneaky path mitigation, which can store information with long retention. Aggressive downscaling to ∼14 nm lateral dimension produced an ultra-small cell effectively having 76.5 nm² area for single bit storage. Furthermore, the devices also exhibited unique optical programmability among the low resistance states.

Recent advances toward environment-friendly photodetectors based on lead-free metal halide perovskites and perovskite derivatives

Recently, metal-halide perovskites have emerged as promising materials for photodetector (PD) applications owing to their superior optoelectronic properties, such as ambipolar charge transport characteristics, high carrier mobility, and so on. In the past few years, rapid progress in lead-based perovskite PDs has been witnessed. However, the critical environmental instability and lead-toxicity seriously hinder their further applications and commercialization. Therefore, searching for environmentally stable and lead-free halide perovskites (LFHPs) to address the above hurdles is certainly a worthwhile subject. In this review, we present a comprehensive overview of currently explored LFHPs with an emphasis on their crystal structures, optoelectronic properties, synthesis and modification methods, as well as the PD applications. LFHPs are classified into four categories according to the replacement strategies of Pb²⁺, including AB(ii)X₃, A₃B(iii)₂X₉, A₂B(i)B(iii)'X₆, and newly-emerging perovskite derivatives. Then, we give a demonstration of the preliminary achievements and limitations in environment-friendly PDs based on such LFHPs and perovskite derivatives, and also discuss their applications in biological synapses, imaging, and X-ray detection. With the perspective of their properties and current challenges, we provide an outlook for future directions in this rapidly evolving field to achieve high-quality LFHPs and perovskite derivatives for a broader range of fundamental research and practical applications.

Optically tunable ultra-fast resistive switching in lead-free methyl-ammonium bismuth iodide perovskite films

Resistive RAMs (Re-RAMs) have come to the fore as a rising star among the next generation non-volatile memories with fast operational speed, excellent endurance and prolonged data retention capabilities. Re-RAMs are being profusely used as storage and processing modules in neuromorphic hardware and high frequency switches in radio-frequency (RF) circuits. Owing to its intrinsic hysteresis and abundance of charge migration pathways, lead halide perovskites have emerged as a promising switching medium in Re-RAMs besides their ubiquitous usage in optoelectronic devices. Here, we adopted a lead-free eco-friendly methyl-ammonium bismuth iodide (MA₃Bi₂I₉) perovskite (prepared by solvent-free engineering) as the switching medium sandwiched between copper (Cu) and indium doped tin oxide (ITO) electrodes. The devices exhibited a 10⁴ high ON/OFF ratio that provided a large window for the multi-bit data storage in a single cell with good accuracy. Robust endurance of 1730 cycles and good data retention ability of >3 × 10⁵ s were also observed. Careful switching speed measurements showed the devices can operate with an ultra-fast speed of 10 ns for writing and erasing respectively. The devices responded to light illumination and the prolonged retention of the opto-electrically tuned resistance states paved the way for image memorization.

Vertically Aligned CsPbBr3 Nanowire Arrays with Template-Induced Crystal Phase Transition and Stability

Metal halide perovskites show great promise for a wide range of optoelectronic applications but are plagued by instability when exposed to air and light. This work presents low-temperature solution growth of vertically aligned CsPbBr₃ nanowire arrays in AAO (anodized aluminum oxide) templates with excellent stability, with samples exposed to air for 4 months still exhibiting comparable photoluminescence and UV stability to fresh samples. The single-crystal nanowire length is adjusted from ∼100 nm to 5 μm by adjusting the precursor solution amount and concentration, and we observe length-to-diameter ratios as high as 100. Structural characterization results indicate that large-diameter CsPbBr₃ nanowires have an orthorhombic structure, while the 10 nm- and 20 nm-diameter nanowires adopt a cubic structure. Photoluminescence shows a gradual blue-shift in emission with decreasing nanowire diameter and marginal changes under varying illumination power intensity. The CsPbBr₃-nanowires/AAO composite exhibits excellent resistance to X-ray radiation and long-term air storage, which makes it promising for future optoelectronic applications such as X-ray scintillators. These results show how physical confinement in AAO can be used to realize CsPbBr₃ nanowire arrays and control their morphology and crystal structure.

Efficient Luminescent Halide Quadruple-Perovskite Nanocrystals via Trap-Engineering for Highly Sensitive Photodetectors

The colloidal synthesis of a new type of lead-free halide quadruple-perovskite nanocrystals (NCs) is reported. The photoluminescence quantum yield and charge-carrier lifetime of quadruple-perovskite NCs can be enhanced by 96 and 77-fold, respectively, via metal alloying. Study of charge-carrier dynamics provide solid demonstrate that the PL enhancement is due to the elimination of ultrafast (1.4 ps) charge-carrier trapping processes in the alloyed NCs. Thanks to the high crystallinity, low trap-state density, and long carrier lifetime (193.4 μs), the alloyed quadruple-perovskite NCs can serve as the active material for high-performance photodetectors, which exhibit high responsivity (up to 0.98 × 10⁴ A W^-1 ) and an external quantum efficiency (EQE) of 3 × 10⁶ %. These numbers are among the highest for perovskite-NC-based photodetectors.

Micro- and Nanostructured Lead Halide Perovskites: From Materials to Integrations and Devices

In the past decade, lead halide perovskites have been intensively explored due to their promising future in photovoltaics. Owing to their remarkable material properties such as solution processability, nice defect tolerance, broad bandgap tunability, high quantum yields, large refractive index, and strong nonlinear effects, this family of materials has also shown advantages in many other optoelectronic devices including microlasers, photodetectors, waveguides, and metasurfaces. Very recently, the stability of perovskite devices has been improved with the optimization of synthesis methods and device architectures. It is widely accepted that it is the time to integrate all the perovskite devices into a real system. However, for integrated photonic circuits, the shapes and distributions of chemically synthesized perovskites are quite random and not suitable for integration. Consequently, controlled synthesis and the top-down fabrication process are highly desirable to break the barriers. Herein, the developments of patterning and integration techniques for halide perovskites, as well as the structure/function relationships, are systematically reviewed. The recent progress in the study of optical responses originating from nanostructured perovskites is also presented. Lastly, the challenges and perspective for nanostructured-perovskite devices are discussed.

Low-Dimensional Metal Halide Perovskite Photodetectors

Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.

Highly efficient self-powered perovskite photodiode with an electron-blocking hole-transport NiOx layer

Hybrid organic-inorganic perovskite materials provide noteworthy compact systems that could offer ground-breaking architectures for dynamic operations and advanced engineering in high-performance energy-harvesting optoelectronic devices. Here, we demonstrate a highly effective self-powered perovskite-based photodiode with an electron-blocking hole-transport layer (NiOx). A high value of responsivity (R = 360 mA W-1) with good detectivity (D = 2.1 × 1011 Jones) and external quantum efficiency (EQE = 76.5%) is achieved due to the excellent interface quality and suppression of the dark current at zero bias voltage owing to the NiOx layer, providing outcomes one order of magnitude higher than values currently in the literature. Meanwhile, the value of R is progressively increased to 428 mA W-1 with D = 3.6 × 1011 Jones and EQE = 77% at a bias voltage of - 1.0 V. With a diode model, we also attained a high value of the built-in potential with the NiOx layer, which is a direct signature of the improvement of the charge-selecting characteristics of the NiOx layer. We also observed fast rise and decay times of approximately 0.9 and 1.8 ms, respectively, at zero bias voltage. Hence, these astonishing results based on the perovskite active layer together with the charge-selective NiOx layer provide a platform on which to realise high-performance self-powered photodiode as well as energy-harvesting devices in the field of optoelectronics.

Perovskite Core-Shell Nanowire Transistors: Interfacial Transfer Doping and Surface Passivation

While halide perovskite electronics are rapidly developing, they are greatly limited by the inferior charge transport and poor stability. In this work, effective surface charge transfer doping of vapor-liquid-solid (VLS)-grown single-crystalline cesium lead bromide perovskite (CsPbBr₃) nanowires (NWs) via molybdenum trioxide (MoO₃) surface functionalization is achieved. Once fabricated into NW devices, due to the efficient interfacial charge transfer and reduced impurity scattering, a 15× increase in the field-effect hole mobility (μ_h) from 1.5 to 23.3 cm²/(V s) is accomplished after depositing the 10 nm thick MoO₃ shell. This enhanced mobility is already better than any mobility value reported for perovskite field-effect transistors (FETs) to date. The photodetection performance of these CsPbBr₃/MoO₃ core-shell NWs is also investigated to yield a superior responsivity (R) up to 2.36 × 10³ A/W and an external quantum efficiency (EQE) of over 5.48 × 10⁵% toward the 532 nm regime. Importantly, the MoO₃ shell can provide excellent surface passivation to the CsPbBr₃ NW core that minimizes the diffusion of detrimental water and oxygen molecules, improving the air stability of CsPbBr₃/MoO₃ core-shell NW devices. All these findings evidently demonstrate the surface doping as an enabling technology to realize high-mobility and air-stable low-dimensional halide perovskite devices.

Constructing Caesium-Based Lead-Free Perovskite Photodetector Enabling Self-Powered Operation with Extended Spectral Response

Since the discovery of the state-of-the-art hybrid halide perovskites, their application in optoelectronic systems has drawn considerable attention. However, the toxicity from lead (Pb) and the volatility induced by organic constituents hinder their future large-scale market development. Herein, a fully inorganic Pb-free halide perovskite based on robust Cs₃Bi₂I₉ is synthesized and realized its potential in photodetector application. The material property investigation suggests the good crystalline quality with strong absorption coefficient suitable for photodetection. An interesting feature based on the extended absorption is obtained, which is the characteristic of a weak phonon-assisted transition. Additionally, the morphological features display the beautifully grown micrometer-sized crystals of Cs₃Bi₂I₉. The fabricated photodetector demonstrated the self-powered operation (zero-bias state) with a very low dark current of 0.46 pA. Profiting from this, an improved photosensitivity of 1.4 × 10⁴ is achieved. Moreover, along with self-powered photodetection, the photodetector exhibits a broad spectral response (450-950 nm), high detectivity (1.2 × 10¹⁰/1.6 × 10¹² Jones), high responsivity (0.59 μA W^-1/3.8 mA W^-1), and fast response speed (ms) under a weak optical signal of 0.1 mW cm^-2 with a larger active area of 0.25 cm². The photodetector shows high photostability which was well retained for almost 2000 repetitive cycles without degradation. More strikingly, based on the core stability of the perovskite film, an excellent long-term stability of 3 months (90 days) is achieved for the photodetector even after exposure to moist air (75% relative humidity). This study thus highlights one of the few Pb-free all-inorganic perovskite photodetectors employing a simple device architecture with a larger active area that outshines by showing efficient and comparable performance under the self-powered mode under low light conditions.

Color-pure red light-emitting diodes based on two-dimensional lead-free perovskites

It remains a central challenge to the information display community to develop red light-emitting diodes (LEDs) that meet demanding color coordinate requirements for wide color gamut displays. Here, we report high-efficiency, lead-free (PEA)₂SnI₄ perovskite LEDs (PeLEDs) with color coordinates (0.708, 0.292) that fulfill the Rec. 2100 specification for red emitters. Using valeric acid (VA)-which we show to be strongly coordinated to Sn²⁺-we slow the crystallization rate of the perovskite, improving the film morphology. The incorporation of VA also protects tin from undesired oxidation during the film-forming process. The improved films and the reduced Sn⁴⁺ content enable PeLEDs with an external quantum efficiency of 5% and an operating half-life exceeding 15 hours at an initial brightness of 20 cd/m² This work illustrates the potential of Cd- and Pb-free PeLEDs for display technology.

A solution-processed ternary copper halide thin films for air-stable and deep-ultraviolet-sensitive photodetector

Recently, the newly emerging lead-halide perovskites have received tremendous attention in the photodetection field because of their intrinsic large light absorption and high well-balanced carrier transport characteristics. Unfortunately, the issue of instability and the existence of toxic lead cations have greatly restricted their practical applications and future commercialization. Furthermore, the previous studies on perovskite photodetectors mainly operate in visible and near-infrared light region, and there are practically no relevant reports aimed at the deep-ultraviolet (DUV) region. In this study, an air-stable and DUV-sensitive photoconductive detector was demonstrated with a solution-processed ternary copper halides Cs₃Cu₂I₅ thin films as the light absorber. The proposed photodetector is very sensitive to wavelengths of light below 320 nm and unresponsive to the visible light. Because of the high material integrity and large surface coverage of the Cs₃Cu₂I₅ thin films, the detector presents an outstanding photodetection performance with a photoresponsivity of ∼17.8 A W^-1, specific detectivity of 1.12 × 10¹² Jones, and fast response speed of 465/897 μs, superior to previously reported DUV photodetectors based on other material systems. Unlike traditional lead-halide perovskites, the lead-free Cs₃Cu₂I₅ shows remarkable stability against heat, UV light, and environmental oxygen/moisture. Thus, the unsealed photodetector demonstrates good operation stability for 11 h of continuous running in open air. Even after 80-day storage in ambient air, its photodetection capability can nearly be maintained. The results suggest that non-toxic Cs₃Cu₂I₅ could be a potential candidate for stable and environment friendly DUV detectors, enabling an assembly of optoelectronic systems in the future.

Reducing current fluctuation of Cs3Bi2Br9 perovskite photodetectors for diffuse reflection imaging with wide dynamic range

Recently, the newly booming metal halide perovskites have attracted extensive attention worldwide due to their outstanding optoelectronic performance, and are expected to be ideal candidates for photodetectors (PDs). However, there is still lack of perovskite PDs-based imaging devices coming into commercialization stage, due to some practical reasons including toxicity brought by lead-based perovskites and the large light current fluctuations. In this paper, for the first time we fabricate a lead-free Cs₃Bi₂Br₉ perovskite PD, and build a prototype of this perovskite PD-based imaging system with diffuse reflection imaging mode. Moreover, we propose a new parameter F related to light current fluctuation to evaluate imaging performance of a PD especially for weak diffuse light condition, and prove its usability by comparison of unoptimized lead-free Cs₃Bi₂Br₉ perovskite PD and atomic layer deposition (ALD) optimized Cs₃Bi₂Br₉ PD. ALD-optimization can improve the quality of perovskite film and suppress the dark current and current fluctuation. Finally, we obtain satisfactory diffuse reflection images of 2D and 3D objects with wide dynamic range. Therefore, the ALD-optimized Cs₃Bi₂Br₉ PD has addressed two major concerns about perovskite PDs-based imaging devices, that may extend application of perovskite materials and improve imaging quality.

Recent Advances in Vertically Aligned Nanowires for Photonics Applications

Over the past few decades, nanowires have arisen as a centerpiece in various fields of application from electronics to photonics, and, recently, even in bio-devices. Vertically aligned nanowires are a particularly decent example of commercially manufacturable nanostructures with regard to its packing fraction and matured fabrication techniques, which is promising for mass-production and low fabrication cost. Here, we track recent advances in vertically aligned nanowires focused in the area of photonics applications. Begin with the core optical properties in nanowires, this review mainly highlights the photonics applications such as light-emitting diodes, lasers, spectral filters, structural coloration and artificial retina using vertically aligned nanowires with the essential fabrication methods based on top-down and bottom-up approaches. Finally, the remaining challenges will be briefly discussed to provide future directions.

Self-Powered and Broadband Lead-Free Inorganic Perovskite Photodetector with High Stability

Metal halide perovskite materials have opened up a great opportunity for high-performance optoelectronic devices owing to their extraordinary optoelectronic properties. More than lead halide ones, stable and nontoxic bismuth halide perovskites exhibit more promise in their future commercialization. In this work, we developed for the first time photodetectors based on full-inorganic Cs₃Bi₂I_9-xBr_x perovskites and modulate their performance by varying x in the composition systematically. Among those self-powered photodetectors, those based on Cs₃Bi₂I₆Br₃ shows the best performance with excellent photosensitivity of 4.1 × 10⁴ at zero bias as well as the responsivity and detectivity reaching 15 mA/W and 4.6 × 10¹¹ Jones, respectively. More strikingly, the full-inorganic perovskite photodetectors exhibit excellent stability in the ambient environment and can maintain over 96% of the initial value after 100 days owing to the high stability of the core perovskite film. The paper definitely paves an alternative and promising strategy for the design of future commercial photodetectors that are self-powered, stable, nontoxic, etc.

Perovskite Single-Crystal Microwire-Array Photodetectors with Performance Stability beyond 1 Year

Compared with thin-film morphology, 1D perovskite structures such as micro/nanowires with fewer grain boundaries and lower defect density are very suitable for high-performance photodetectors with higher stability. Although the stability of perovskite microwire-based photodetectors has been substantially enhanced in comparison with that of photodetectors based on thin-film morphology, practical applications require further improvements to the stability before implementation. In this study, a template-assisted method is developed to prepare methylammonium lead bromide (MAPbBr₃ ) micro/nanowire structures, which are encapsulated in situ by a protective hydrophobic molecular layer. The combination of the protective layer, high crystalline quality, and highly ordered microstructures significantly improve the stability of the MAPbBr₃ single-crystal microwire arrays. Consequently, these MAPbBr₃ single-crystal microwire-array-based photodetectors exhibit significant long-term stability, maintaining 96% of the initial photocurrent after 1 year without further encapsulation. The lifetime of such photodetectors is hence approximately four times longer than that of the most stable previously reported perovskite micro/nanowire-based photodetector; this is thought to be the most stable perovskite photodetector reported thus far. Furthermore, this work should contribute further toward the realization of perovskite 1D structures with long-term stability.

Planar Growth, Integration, and Applications of Semiconducting Nanowires

Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high-performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More-than-Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line-shape of NWs on planar or out-of-plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in-plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.

Recent Advancements and Challenges for Low-Toxicity Perovskite Materials

Lead-based organic-inorganic hybrid perovskite materials have been developed for advanced optoelectronic applications. However, the toxicity of lead and the chemical instability of lead-based perovskite materials have so far been demonstrated to be an overwhelming challenge. The discovery of perovskite materials based on low-toxicity elements, such as Sn, Bi, Sb, Ge, and Cu, with superior optoelectronic properties provides alternative approaches to realize high-performance perovskite optoelectronics. In this review, recent advances in the aspects of low-toxicity perovskite solar cells, photodetectors, light-emitting diodes, and thermoelectric devices are highlighted. The antioxidation stability of metal cation and the crystallization process of the low-toxicity perovskite materials are discussed. In the last part, the outlook toward addressing various issues requiring further attention in the development of low-toxicity perovskite materials is outlined.

Superior Stability and Emission Quantum Yield (23% ± 3%) of Single-Layer 2D Tin Perovskite TEA2 SnI4 via Thiocyanate Passivation

Tin-based perovskite, which exhibits narrower bandgap and comparable photophysical properties to its lead analogs, is one of the most forward-looking lead-free semiconductor materials. However, the poor oxidative stability of tin perovskite hinders the development toward practical application. In this work, the effect of pseudohalide anions on the stability and emission properties of single-layer 2D tin perovskite nanoplates with chemical formula TEA₂ SnI₄ (TEA = 2-thiophene-ethylammonium) is reported. The results reveal that ammonium thiocyanate (NH₄ SCN) is the most effective additive in enhancing the stability and photoluminescence quantum yield of 2D TEA₂ SnI₄ (23 ± 3%). X-Ray photoelectron spectroscopic investigations on the thiocyanate passivated TEA₂ SnI₄ nanoplate show less than a 1% increase of Sn⁴⁺ signal upon 30 min exposure to air under ambient conditions (298 K, humidity ≈70%). Furthermore, no noticeable decrease in emission intensity of the nanoplate is observed after 20 h in air. The SCN^- passivation during the growth stage of TEA₂ SnI₄ is proposed to play a crucial role in preventing the oxidation of Sn²⁺ and hence boosts both stability and photoluminescence yield of tin perovskite nanoplates.

Lead-Free Perovskite/Organic Semiconductor Vertical Heterojunction for Highly Sensitive Photodetectors

In recent years, photodetectors based on organic-inorganic lead halide perovskites have been studied extensively. However, the inclusion of lead in those materials can cause severe human health and environmental problems, which is undesirable for practical applications. Here, we report high-performance photodetectors with a tin-based perovskite/PEDOT:PSS vertical heterojunction. The device demonstrates a broadband photoresponse from NIR to UV. The maximum responsivity and gain are up to 2.6 × 10⁶ A/W and 4.7 × 10⁶, respectively. Moreover, a much shorter response time and higher detectivity can be achieved by reducing the thickness of PEDOT:PSS. The outstanding performance is due to the excellent optoelectronic properties of the perovskite and the photogating effect originating from the heterojunction. Furthermore, devices fabricated on flexible substrates can demonstrate not only high sensitivity but also excellent bending stability. This work opens up the opportunity of using lead-free perovskite in highly sensitive photodetectors with vertical heterojunctions.

Synthesis and optical applications of low dimensional metal-halide perovskites

Metal halide perovskites have received substantial attention in research communities due to their outstanding efficiency achievements in the field of photovoltaics, optoelectronics and electronics, exhibiting extraordinary optical, electrical and mechanical properties. The exceptional structural tunability enables perovskite material to possess low-dimensional form at the atomic level and extends their applications into optoelectronic and photonic fields. This review discusses the recent progress of synthetic routes and fundamental optoelectronic properties of low-dimensional metal halide perovskites. In addition, the focus is to highlight the potential applications of perovskites in various devices including solar cells, light-emitting diodes, lasers, waveguides and memory devices. Finally, outlooks and the challenges that face the development of the perovskite materials in the near future are also presented.

A Microchannel-Confined Crystallization Strategy Enables Blade Coating of Perovskite Single Crystal Arrays for Device Integration

Perovskite single crystals (PSCs) possess superior optoelectronic properties compared to their corresponding polycrystalline films, but their applications of PSCs in high-performance, integrated devices are hindered by their heavy thickness and difficulty in scalable deposition. Here, a microchannel-confined crystallization (MCC) strategy to grow uniform and large-area PSC arrays for integrated device applications is reported. Benefiting from the confinement effect of the microchannels, solution flow dynamics is well controlled, and thus uniform deposition of PSC arrays with suitable thickness is achieved, meaning they are applicable for scale-up device applications. The resulting PSCs possess excellent optoelectronic properties in terms of a long carrier lifetime (175 ns) and an ultralow defect density (2 × 10⁹ cm^-3 ), which are comparable to the corresponding bulk crystals. The unique embedded structure of PSCs within the microchannels allows the construction of a high-integration image sensor. This work paves the way toward high-throughput growth of PSCs for integrated optoelectronic devices.