1
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Ramezani F, Strasbourg M, Parvez S, Saxena R, Jariwala D, Borys NJ, Whitaker BM. Predicting quantum emitter fluctuations with time-series forecasting models. Sci Rep 2024; 14:6920. [PMID: 38519600 PMCID: PMC10959974 DOI: 10.1038/s41598-024-56517-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Accepted: 03/07/2024] [Indexed: 03/25/2024] Open
Abstract
2D materials have important fundamental properties allowing for their use in many potential applications, including quantum computing. Various Van der Waals materials, including Tungsten disulfide (WS2), have been employed to showcase attractive device applications such as light emitting diodes, lasers and optical modulators. To maximize the utility and value of integrated quantum photonics, the wavelength, polarization and intensity of the photons from a quantum emission (QE) must be stable. However, random variation of emission energy, caused by the inhomogeneity in the local environment, is a major challenge for all solid-state single photon emitters. In this work, we assess the random nature of the quantum fluctuations, and we present time series forecasting deep learning models to analyse and predict QE fluctuations for the first time. Our trained models can roughly follow the actual trend of the data and, under certain data processing conditions, can predict peaks and dips of the fluctuations. The ability to anticipate these fluctuations will allow physicists to harness quantum fluctuation characteristics to develop novel scientific advances in quantum computing that will greatly benefit quantum technologies.
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Affiliation(s)
- Fereshteh Ramezani
- Electrical and Computer Engineering Department, Montana State University, Bozeman, USA.
| | | | - Sheikh Parvez
- Department of Physics, Montana State University, Bozeman, USA
- Materials Science Program, Montana State University, Bozeman, USA
| | - Ravindra Saxena
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, USA
| | - Nicholas J Borys
- Department of Physics, Montana State University, Bozeman, USA
- Materials Science Program, Montana State University, Bozeman, USA
- Optical Technology Center, Montana State University, Bozeman, USA
| | - Bradley M Whitaker
- Electrical and Computer Engineering Department, Montana State University, Bozeman, USA
- Optical Technology Center, Montana State University, Bozeman, USA
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2
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Liu A, Zhang X, Liu Z, Li Y, Peng X, Li X, Qin Y, Hu C, Qiu Y, Jiang H, Wang Y, Li Y, Tang J, Liu J, Guo H, Deng T, Peng S, Tian H, Ren TL. The Roadmap of 2D Materials and Devices Toward Chips. NANO-MICRO LETTERS 2024; 16:119. [PMID: 38363512 PMCID: PMC10873265 DOI: 10.1007/s40820-023-01273-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/30/2023] [Indexed: 02/17/2024]
Abstract
Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.
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Affiliation(s)
- Anhan Liu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Xiaowei Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Ziyu Liu
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yuning Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China
| | - Xueyang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Chen Hu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yanqing Qiu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Han Jiang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yang Wang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yifan Li
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China.
| | - Tao Deng
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
- IMECAS-HKUST-Joint Laboratory of Microelectronics, Beijing, 100029, People's Republic of China.
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
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3
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Shin D, Lee HJ, Jung D, Chae JA, Park JW, Lim J, Im S, Min S, Hwang E, Lee DC, Park YS, Chang JH, Park K, Kim J, Park JS, Bae WK. Growth Control of InP/ZnSe Heterostructured Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2312250. [PMID: 38300222 DOI: 10.1002/adma.202312250] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2023] [Revised: 01/23/2024] [Indexed: 02/02/2024]
Abstract
The morphology of heterostructured semiconductor nanocrystals (h-NCs) dictates the spatial distribution of charge carriers and their recombination dynamics and/or transport, which are the main performance indicators of photonic applications utilizing h-NCs. The inability to control the morphology of heterovalent III-V/II-VI h-NCs composed of heavy-metal-free elements hinders their practical use. As a case study of III-V/II-VI h-NCs, the growth control of ZnSe epilayers on InP NCs is demonstrated here. The anisotropic morphology in InP/ZnSe h-NCs is attributed to the facet-dependent energy costs for the growth of ZnSe epilayers on different facets of InP NCs, and effective chemical means for controlling the growth rates of ZnSe on different surface planes are demonstrated. Ultimately, this article capitalizes on the controlled morphology of InP/ZnSe h-NCs to expand their photophysical characteristics from stable and pure emission to environment-sensitive one, which will facilitate their use in a variety of photonic applications.
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Affiliation(s)
- Doyoon Shin
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hak June Lee
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Dongju Jung
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jong Ah Chae
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jeong Woo Park
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jaemin Lim
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Seongbin Im
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Sejong Min
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering, KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Young-Shin Park
- Chemistry Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Jun Hyuk Chang
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Kyoungwon Park
- Display Research Center, Korea Electronics Technology Institute (KETI), Seongnam, 13509, Republic of Korea
| | - Junki Kim
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Ji-Sang Park
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Wan Ki Bae
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
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4
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Guo S, Germanis S, Taniguchi T, Watanabe K, Withers F, Luxmoore IJ. Electrically Driven Site-Controlled Single Photon Source. ACS PHOTONICS 2023; 10:2549-2555. [PMID: 37602287 PMCID: PMC10436352 DOI: 10.1021/acsphotonics.3c00097] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Indexed: 08/22/2023]
Abstract
Single photon sources are fundamental building blocks for quantum communication and computing technologies. In this work, we present a device geometry consisting of gold pillars embedded in a van der Waals heterostructure of graphene, hexagonal boron nitride, and tungsten diselenide. The gold pillars serve to both generate strain and inject charge carriers, allowing us to simultaneously demonstrate the positional control and electrical pumping of a single photon emitter. Moreover, increasing the thickness of the hexagonal boron nitride tunnel barriers restricts electroluminescence but enables electrical control of the emission energy of the site-controlled single photon emitters, with measured energy shifts reaching 40 meV.
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Affiliation(s)
- Shi Guo
- Department
of Physics and Astronomy, University of
Exeter, Exeter EX4 4QL, United
Kingdom
| | - Savvas Germanis
- Department
of Engineering, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Freddie Withers
- Department
of Physics and Astronomy, University of
Exeter, Exeter EX4 4QL, United
Kingdom
| | - Isaac J. Luxmoore
- Department
of Engineering, University of Exeter, Exeter EX4 4QF, United Kingdom
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5
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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6
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Gupta S, Wu W, Huang S, Yakobson BI. Single-Photon Emission from Two-Dimensional Materials, to a Brighter Future. J Phys Chem Lett 2023; 14:3274-3284. [PMID: 36977324 DOI: 10.1021/acs.jpclett.2c03674] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Single photons, often called flying qubits, have enormous promise to realize scalable quantum technologies ranging from an unhackable communication network to quantum computers. However, finding an ideal single-photon emitter (SPE) is a great challenge. Recently, two-dimensional (2D) materials have shown great potential as hosts for SPEs that are bright and operate under ambient conditions. This Perspective enumerates the metrics required for an SPE source and highlights that 2D materials, because of reduced dimensionality, exhibit interesting physical effects and satisfy several metrics, making them excellent candidates to host SPEs. The performance of SPE candidates discovered in 2D materials, hexagonal boron nitride and transition metal dichalcogenides, will be assessed based on the metrics, and the remaining challenges will be highlighted. Lastly, strategies to mitigate such challenges by developing design rules to deterministically create SPE sources will be presented.
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Affiliation(s)
- Sunny Gupta
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Wenjing Wu
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA
| | - Shengxi Huang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA
| | - Boris I Yakobson
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
- Department of Chemistry, Rice University, Houston, Texas 77005, United States
- Smalley-Curl Institute for Nanoscale Science and Technology, Rice University, Houston, Texas 77005, United States
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7
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Zhang J, Lin Y, Liu L. Electron transfer in heterojunction catalysts. Phys Chem Chem Phys 2023; 25:7106-7119. [PMID: 36846919 DOI: 10.1039/d2cp05150h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Abstract
Heterojunction catalysis, the cornerstone of the modern chemical industry, shows potential to tackle the growing energy and environmental crises. Electron transfer (ET) is ubiquitous in heterojunction catalysts, and it holds great promise for improving the catalytic efficiency by tuning the electronic structures or building internal electric fields at interfaces. This perspective summarizes the recent progress of catalysis involving ET in heterojunction catalysts and pinpoints its crucial role in catalytic mechanisms. We specifically highlight the occurrence, driving forces, and applications of ET in heterojunction catalysis. For corroborating the ET processes, common techniques with measurement principles are introduced. We end with the limitations of the current study on ET, and envision future challenges in this field.
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Affiliation(s)
- Jianhua Zhang
- Hubei Key Laboratory of Biomass Fibers and Eco-dyeing & Finishing, College of Chemistry and Chemical Engineering, Wuhan Textile University, Wuhan 430200, P. R. China.
| | - Yuan Lin
- Hubei Key Laboratory of Biomass Fibers and Eco-dyeing & Finishing, College of Chemistry and Chemical Engineering, Wuhan Textile University, Wuhan 430200, P. R. China.
| | - Lijun Liu
- Hubei Key Laboratory of Biomass Fibers and Eco-dyeing & Finishing, College of Chemistry and Chemical Engineering, Wuhan Textile University, Wuhan 430200, P. R. China.
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8
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Dai D, Wang X, Yang J, Dang J, Yuan Y, Fu B, Xie X, Yang L, Xiao S, Shi S, Yan S, Zhu R, Zuo Z, Wang C, Jin K, Gong Q, Xu X. Single charge control of localized excitons in heterostructures with ferroelectric thin films and two-dimensional transition metal dichalcogenides. NANOSCALE 2022; 14:14537-14543. [PMID: 36185039 DOI: 10.1039/d2nr04119g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Single charge control of localized excitons (LXs) in two-dimensional transition metal dichalcogenides (TMDCs) is crucial for potential applications in quantum information processing and storage. However, traditional electrostatic doping method by applying metallic gates onto TMDCs may cause inhomogeneous charge distribution, optical quenching, and energy loss. Herein, by locally controlling the ferroelectric polarization of the ferroelectric thin film BiFeO3 (BFO) with a scanning probe, we can deterministically manipulate the doping type of monolayer WSe2 to achieve p-type and n-type doping. This nonvolatile approach can maintain the doping type and hold the localized excitonic charges for a long time without applied voltage. Our work demonstrated that the ferroelectric polarization of BFO can control the charges of LXs effectively. Neutral and charged LXs have been observed in different ferroelectric polarization regions, confirmed by magnetic optical measurement. Highly circular polarization degree with 90% photon emission from these quantum emitters was achieved in high magnetic fields. Controlling the single charge of LXs in a non-volatile way shows a great potential for deterministic photon emission with desired charge states for photonic long-term memory.
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Affiliation(s)
- Danjie Dai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinyan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jingnan Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871 Beijing, China.
| | - Jianchen Dang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yu Yuan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bowen Fu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871 Beijing, China.
| | - Xin Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Longlong Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Xiao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shushu Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Sai Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Rui Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhanchun Zuo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871 Beijing, China.
| | - Xiulai Xu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871 Beijing, China.
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9
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Klaiss R, Ziegler J, Miller D, Zappitelli K, Watanabe K, Taniguchi T, Alemán B. Uncovering the morphological effects of high-energy Ga + focused ion beam milling on hBN single-photon emitter fabrication. J Chem Phys 2022; 157:074703. [DOI: 10.1063/5.0097581] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Abstract
Many techniques to fabricate complex nanostructures and quantum emitting defects in low dimensional materials for quantum information technologies rely on the patterning capabilities of focused ion beam (FIB) systems. In particular, the ability to pattern arrays of bright and stable room temperature single-photon emitters (SPEs) in 2D wide-bandgap insulator hexagonal boron nitride (hBN) via high-energy heavy-ion FIB allows for direct placement of SPEs without structured substrates or polymer-reliant lithography steps. However, the process parameters needed to create hBN SPEs with this technique are dependent on the growth method of the material chosen. Moreover, morphological damage induced by high-energy heavy-ion exposure may further influence the successful creation of SPEs. In this work, we perform atomic force microscopy to characterize the surface morphology of hBN regions patterned by Ga+ FIB to create SPEs at a range of ion doses and find that material swelling, and not milling as expected, is most strongly and positively correlated with the onset of non-zero SPE yields. Furthermore, we simulate vacancy concentration profiles at each of the tested doses and propose a qualitative model to elucidate how Ga+ FIB patterning creates isolated SPEs that is consistent with observed optical and morphological characteristics and is dependent on the consideration of void nucleation and growth from vacancy clusters. Our results provide novel insight into the formation of hBN SPEs created by high-energy heavy-ion milling that can be leveraged for monolithic hBN photonic devices and could be applied to a wide range of low-dimensional solid-state SPE hosts.
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Affiliation(s)
- Rachael Klaiss
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
| | - Joshua Ziegler
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
| | - David Miller
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
| | - Kara Zappitelli
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Benjamín Alemán
- Department of Physics, Material Science Institute, Center for Optical, Molecular, and Quantum Science, University of Oregon, Eugene, Oregon 97403, USA
- Phil and Penny Knight Campus for Accelerating Scientific Impact, University of Oregon, Eugene, Oregon 97403, USA
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10
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Ghosh Dastidar M, Thekkooden I, Nayak PK, Praveen Bhallamudi V. Quantum emitters and detectors based on 2D van der Waals materials. NANOSCALE 2022; 14:5289-5313. [PMID: 35322836 DOI: 10.1039/d1nr08193d] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Light plays an essential role in our world, with several technologies relying on it. Photons will also play an important role in the emerging quantum technologies, which are primed to have a transformative effect on our society. The development of single-photon sources and ultra-sensitive photon detectors is crucial. Solid-state emitters are being heavily pursued for developing truly single-photon sources for scalable technology. On the detectors' side, the main challenge lies in inventing sensitive detectors operating at sub-optical frequencies. This review highlights the promising research being conducted for the development of quantum emitters and detectors based on two-dimensional van der Waals (2D-vdW) materials. Several 2D-vdW materials, from canonical graphene to transition metal dichalcogenides and their heterostructures, have generated a lot of excitement due to their tunable emission and detection properties. The recent developments in the creation, fabrication and control of quantum emitters hosted by 2D-vdW materials and their potential applications in integrated photonic devices are discussed. Furthermore, the progress in enhancing the photon-counting potential of 2D material-based detectors, viz. 2D photodetectors, bolometers and superconducting single-photon detectors functioning at various wavelengths is also reported.
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Affiliation(s)
- Madhura Ghosh Dastidar
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Immanuel Thekkooden
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India
| | - Pramoda K Nayak
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
| | - Vidya Praveen Bhallamudi
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Departments of Physics and Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India.
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11
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So JP, Kim HR, Baek H, Jeong KY, Lee HC, Huh W, Kim YS, Watanabe K, Taniguchi T, Kim J, Lee CH, Park HG. Electrically driven strain-induced deterministic single-photon emitters in a van der Waals heterostructure. SCIENCE ADVANCES 2021; 7:eabj3176. [PMID: 34669464 PMCID: PMC8528413 DOI: 10.1126/sciadv.abj3176] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Quantum confinement in transition metal dichalcogenides (TMDCs) enables the realization of deterministic single-photon emitters. The position and polarization control of single photons have been achieved via local strain engineering using nanostructures. However, most existing TMDC-based emitters are operated by optical pumping, while the emission sites in electrically pumped emitters are uncontrolled. Here, we demonstrate electrically driven single-photon emitters located at the positions where strains are induced by atomic force microscope indentation on a van der Waals heterostructure consisting of graphene, hexagonal boron nitride, and tungsten diselenide. The optical, electrical, and mechanical properties induced by the local strain gradient were systematically analyzed. The emission at the indentation sites exhibits photon antibunching behavior with a g(2)(0) value of ~0.3, intensity saturation, and a linearly cross-polarized doublet, at 4 kelvin. This robust spatial control of electrically driven single-photon emitters will pave the way for the practical implementation of integrated quantum light sources.
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Affiliation(s)
- Jae-Pil So
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Ha-Reem Kim
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Hyeonjun Baek
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
- Center for Quantum Information, Korea Institute of Science and Technology, Seoul 02841, Republic of Korea
| | - Kwang-Yong Jeong
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Hoo-Cheol Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Woong Huh
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Yoon Seok Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Jungkil Kim
- Department of Physics, Jeju National University, Jeju 63243, Republic of Korea
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
- Corresponding author.
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12
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Loh L, Chen Y, Wang J, Yin X, Tang CS, Zhang Q, Watanabe K, Taniguchi T, Wee AT, Bosman M, Quek SY, Eda G. Impurity-Induced Emission in Re-Doped WS 2 Monolayers. NANO LETTERS 2021; 21:5293-5300. [PMID: 34115939 DOI: 10.1021/acs.nanolett.1c01439] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Impurity doping is a viable route toward achieving desired subgap optical response in semiconductors. In strongly excitonic two-dimensional (2D) semiconductors such as transition metal dichalcogenides (TMDs), impurities are expected to result in bound-exciton emission. However, doped TMDs often exhibit a broad Stokes-shifted emission without characteristic features, hampering strategic materials engineering. Here we report observation of a well-defined impurity-induced emission in monolayer WS2 substitutionally doped with rhenium (Re), which is an electron donor. The emission exhibits characteristics of localized states and dominates the spectrum up to 200 K. Gate dependence reveals that neutral impurity centers are responsible for the observed emission. Using GW-Bethe-Salpeter equation (GW-BSE) calculations, we attribute the emission to transitions between spin-split upper Re band and valence band edge.
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Affiliation(s)
- Leyi Loh
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551 Singapore
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575 Singapore
| | - Yifeng Chen
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551 Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 2, 117542, Singapore
| | - Junyong Wang
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551 Singapore
| | - Xinmao Yin
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551 Singapore
- Shanghai Key Laboratory of High Temperature Superconductors, Physics Department, Shanghai University, Shanghai 200444, China
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, 117603 Singapore
| | - Chi Sin Tang
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551 Singapore
- Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, 117603 Singapore
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, 138634 Singapore
| | - Qi Zhang
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551 Singapore
| | - Kenji Watanabe
- Research Centre for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Centre for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Andrew Ts Wee
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551 Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 2, 117542, Singapore
| | - Michel Bosman
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575 Singapore
| | - Su Ying Quek
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551 Singapore
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575 Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 2, 117542, Singapore
| | - Goki Eda
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551 Singapore
- Centre for Advanced 2D Materials, National University of Singapore, 2 Science Drive 2, 117542, Singapore
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543 Singapore
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13
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Shaik ABDAJWI, Palla P. Optical quantum technologies with hexagonal boron nitride single photon sources. Sci Rep 2021; 11:12285. [PMID: 34112837 PMCID: PMC8192930 DOI: 10.1038/s41598-021-90804-4] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2020] [Accepted: 05/11/2021] [Indexed: 02/05/2023] Open
Abstract
Single photon quantum emitters are important building blocks of optical quantum technologies. Hexagonal boron nitride (hBN), an atomically thin wide band gap two dimensional material, hosts robust, optically active luminescent point defects, which are known to reduce phonon lifetimes, promises as a stable single-photon source at room temperature. In this Review, we present the recent advances in hBN quantum light emission, comparisons with other 2D material based quantum sources and analyze the performance of hBN quantum emitters. We also discuss state-of-the-art stable single photon emitter's fabrication in UV, visible and near IR regions, their activation, characterization techniques, photostability towards a wide range of operating temperatures and harsh environments, Density-functional theory predictions of possible hBN defect structures for single photon emission in UV to IR regions and applications of single photon sources in quantum communication and quantum photonic circuits with associated potential obstacles.
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Affiliation(s)
- Akbar Basha Dhu-Al-Jalali-Wal-Ikram Shaik
- Center for Nanotechnology Research & Department of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology (VIT), Vellore, Tamil Nadu, 632014, India
| | - Penchalaiah Palla
- Center for Nanotechnology Research & Department of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology (VIT), Vellore, Tamil Nadu, 632014, India.
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14
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Chen Y, Xu X, Li C, Bendavid A, Westerhausen MT, Bradac C, Toth M, Aharonovich I, Tran TT. Bottom-Up Synthesis of Hexagonal Boron Nitride Nanoparticles with Intensity-Stabilized Quantum Emitters. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2008062. [PMID: 33733581 DOI: 10.1002/smll.202008062] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2020] [Revised: 01/24/2021] [Indexed: 06/12/2023]
Abstract
Fluorescent nanoparticles are widely utilized in a large range of nanoscale imaging and sensing applications. While ultra-small nanoparticles (size ≤10 nm) are highly desirable, at this size range, their photostability can be compromised due to effects such as intensity fluctuation and spectral diffusion caused by interaction with surface states. In this article, a facile, bottom-up technique for the fabrication of sub-10-nm hexagonal boron nitride (hBN) nanoparticles hosting photostable bright emitters via a catalyst-free hydrothermal reaction between boric acid and melamine is demonstrated. A simple stabilization protocol that significantly reduces intensity fluctuation by ≈85% and narrows the emission linewidth by ≈14% by employing a common sol-gel silica coating process is also implemented. This study advances a promising strategy for the scalable, bottom-up synthesis of high-quality quantum emitters in hBN nanoparticles.
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Affiliation(s)
- Yongliang Chen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Xiaoxue Xu
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Chi Li
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Avi Bendavid
- CSIRO Manufacturing, 36 Bradfield Road, Lindfield, NSW, 2070, Australia
| | - Mika T Westerhausen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Carlo Bradac
- Department of Physics and Astronomy, Trent University, 1600 West Bank Drive, Peterborough, ON, K9L 0G2, Canada
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
- ARC Center of Excellence for Transformative Meta-Optical Systems (TMOS), Faculty of Science, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
- ARC Center of Excellence for Transformative Meta-Optical Systems (TMOS), Faculty of Science, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Toan Trong Tran
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
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15
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Yin Z, Leng J, Wang S, Liang G, Tian W, Wu K, Jin S. Auger-Assisted Electron Transfer between Adjacent Quantum Wells in Two-Dimensional Layered Perovskites. J Am Chem Soc 2021; 143:4725-4731. [DOI: 10.1021/jacs.1c00424] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Zixi Yin
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jing Leng
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Shiping Wang
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Guijie Liang
- Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices, Hubei University of Arts and Science, Xiangyang, Hubei, 441053, China
| | - Wenming Tian
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Kaifeng Wu
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Shengye Jin
- State Key Laboratory of Molecular Reaction Dynamics and Dynamics Research Center for Energy and Environmental Materials, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
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16
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Song C, Noh G, Kim TS, Kang M, Song H, Ham A, Jo MK, Cho S, Chai HJ, Cho SR, Cho K, Park J, Song S, Song I, Bang S, Kwak JY, Kang K. Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics. ACS NANO 2020; 14:16266-16300. [PMID: 33301290 DOI: 10.1021/acsnano.0c06607] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
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Affiliation(s)
- Chanwoo Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seorin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Kiwon Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Intek Song
- Department of Applied Chemistry, Andong National University, Andong 36728, Korea
| | - Sunghwan Bang
- Materials & Production Engineering Research Institute, LG Electronics, Pyeongtaek-si 17709, Korea
| | - Joon Young Kwak
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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17
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Head-Marsden K, Flick J, Ciccarino CJ, Narang P. Quantum Information and Algorithms for Correlated Quantum Matter. Chem Rev 2020; 121:3061-3120. [PMID: 33326218 DOI: 10.1021/acs.chemrev.0c00620] [Citation(s) in RCA: 35] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Discoveries in quantum materials, which are characterized by the strongly quantum-mechanical nature of electrons and atoms, have revealed exotic properties that arise from correlations. It is the promise of quantum materials for quantum information science superimposed with the potential of new computational quantum algorithms to discover new quantum materials that inspires this Review. We anticipate that quantum materials to be discovered and developed in the next years will transform the areas of quantum information processing including communication, storage, and computing. Simultaneously, efforts toward developing new quantum algorithmic approaches for quantum simulation and advanced calculation methods for many-body quantum systems enable major advances toward functional quantum materials and their deployment. The advent of quantum computing brings new possibilities for eliminating the exponential complexity that has stymied simulation of correlated quantum systems on high-performance classical computers. Here, we review new algorithms and computational approaches to predict and understand the behavior of correlated quantum matter. The strongly interdisciplinary nature of the topics covered necessitates a common language to integrate ideas from these fields. We aim to provide this common language while weaving together fields across electronic structure theory, quantum electrodynamics, algorithm design, and open quantum systems. Our Review is timely in presenting the state-of-the-art in the field toward algorithms with nonexponential complexity for correlated quantum matter with applications in grand-challenge problems. Looking to the future, at the intersection of quantum information science and algorithms for correlated quantum matter, we envision seminal advances in predicting many-body quantum states and describing excitonic quantum matter and large-scale entangled states, a better understanding of high-temperature superconductivity, and quantifying open quantum system dynamics.
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Affiliation(s)
- Kade Head-Marsden
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Johannes Flick
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, United States
| | - Christopher J Ciccarino
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.,Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Prineha Narang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
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18
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Peng L, Chan H, Choo P, Odom TW, Sankaranarayanan SKRS, Ma X. Creation of Single-Photon Emitters in WSe 2 Monolayers Using Nanometer-Sized Gold Tips. NANO LETTERS 2020; 20:5866-5872. [PMID: 32644800 DOI: 10.1021/acs.nanolett.0c01789] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Due to their tunable bandgaps and strong spin-valley locking, transition metal dichalcogenides constitute a unique platform for hosting single-photon emitters. Here, we present a versatile approach for creating bright single-photon emitters in WSe2 monolayers by the deposition of gold nanostars. Our molecular dynamics simulations reveal that the formation of the quantum emitters is likely caused by the highly localized strain fields created by the sharp tips of the gold nanostars. The surface plasmon modes supported by the gold nanostars can change the local electromagnetic fields in the vicinity of the quantum emitters, leading to their enhanced emission intensities. Moreover, by correlating the emission energies and intensities of the quantum emitters, we are able to associate them with two types of strain fields and derive the existence of a low-lying dark state in their electronic structures. Our findings are highly relevant for the development and understanding of single-photon emitters in transition metal dichalcogenide materials.
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Affiliation(s)
- Lintao Peng
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Henry Chan
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Priscilla Choo
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Teri W Odom
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Subramanian K R S Sankaranarayanan
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Department of Mechanical and Industrial Engineering, University of Illinois, Chicago, Illinois 60607, United States
| | - Xuedan Ma
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
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19
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Anderson CP, Bourassa A, Miao KC, Wolfowicz G, Mintun PJ, Crook AL, Abe H, Ul Hassan J, Son NT, Ohshima T, Awschalom DD. Electrical and optical control of single spins integrated in scalable semiconductor devices. Science 2019; 366:1225-1230. [PMID: 31806809 DOI: 10.1126/science.aax9406] [Citation(s) in RCA: 46] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2019] [Accepted: 11/05/2019] [Indexed: 01/15/2023]
Abstract
Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.
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Affiliation(s)
- Christopher P Anderson
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.,Department of Physics, University of Chicago, Chicago, IL 60637, USA
| | - Alexandre Bourassa
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Kevin C Miao
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Gary Wolfowicz
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Peter J Mintun
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Alexander L Crook
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.,Department of Physics, University of Chicago, Chicago, IL 60637, USA
| | - Hiroshi Abe
- National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - Jawad Ul Hassan
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
| | - Nguyen T Son
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
| | - Takeshi Ohshima
- National Institutes for Quantum and Radiological Science and Technology, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
| | - David D Awschalom
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA. .,Department of Physics, University of Chicago, Chicago, IL 60637, USA.,Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA
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20
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Xia Y, Li Q, Kim J, Bao W, Gong C, Yang S, Wang Y, Zhang X. Room-Temperature Giant Stark Effect of Single Photon Emitter in van der Waals Material. NANO LETTERS 2019; 19:7100-7105. [PMID: 31518139 DOI: 10.1021/acs.nanolett.9b02640] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Single photon emitters (SPEs) are critical building blocks needed for quantum science and technology. For practical applications, room-temperature solid-state platforms are critically demanded. To scale up quantum information processing using, for example, wavelength division multiplexing quantum key distribution, a large tuning range beyond emission line width of single photon energy is required. Stark effect can tune the single photon energy by an electric field. However, it has been achieved only at cryogenic temperature to pursue a shift larger than emission line width. A large Stark tuning beyond emission line width at room temperature still remains elusive. Here we report the first room-temperature Stark effect of SPEs with a giant Stark shift of single photon energy up to 43 meV/(V/nm), largest among all previous color center emitters. Such a giant Stark shift is 4-fold larger than its line width at room temperature, demonstrated by exploiting hBN color centers. Moreover, the intrinsic broken symmetries are determined via angle-resolved Stark effect, for the first time, by the orientation of the electric permanent dipole moment in the solid-state SPE, which is unachievable in traditional optical polarization measurement. The remarkable Stark shift discovered here and the significant advance in understanding its atomic structure pave a way toward the scalable solid-state on-chip quantum communication and computation at room temperature.
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Affiliation(s)
- Yang Xia
- Nanoscale Science and Engineering Center (NSEC) , University of California , 3112 Etcheverry Hall, Berkeley , California 94720 , United States
| | - Quanwei Li
- Nanoscale Science and Engineering Center (NSEC) , University of California , 3112 Etcheverry Hall, Berkeley , California 94720 , United States
| | - Jeongmin Kim
- Nanoscale Science and Engineering Center (NSEC) , University of California , 3112 Etcheverry Hall, Berkeley , California 94720 , United States
| | - Wei Bao
- Nanoscale Science and Engineering Center (NSEC) , University of California , 3112 Etcheverry Hall, Berkeley , California 94720 , United States
| | - Cheng Gong
- Nanoscale Science and Engineering Center (NSEC) , University of California , 3112 Etcheverry Hall, Berkeley , California 94720 , United States
| | - Sui Yang
- Nanoscale Science and Engineering Center (NSEC) , University of California , 3112 Etcheverry Hall, Berkeley , California 94720 , United States
| | - Yuan Wang
- Nanoscale Science and Engineering Center (NSEC) , University of California , 3112 Etcheverry Hall, Berkeley , California 94720 , United States
| | - Xiang Zhang
- Nanoscale Science and Engineering Center (NSEC) , University of California , 3112 Etcheverry Hall, Berkeley , California 94720 , United States
- Faculty of Sciences and Engineering , University of Hong Kong , Pokfulam, Hong Kong , PR China
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21
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Linhart L, Paur M, Smejkal V, Burgdörfer J, Mueller T, Libisch F. Localized Intervalley Defect Excitons as Single-Photon Emitters in WSe_{2}. PHYSICAL REVIEW LETTERS 2019; 123:146401. [PMID: 31702183 DOI: 10.1103/physrevlett.123.146401] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2019] [Indexed: 05/03/2023]
Abstract
Single-photon emitters play a key role in present and emerging quantum technologies. Several recent measurements have established monolayer WSe_{2} as a promising candidate for a reliable single-photon source. The origin and underlying microscopic processes have remained, however, largely elusive. We present a multiscale tight-binding simulation for the optical spectra of WSe_{2} under nonuniform strain and in the presence of point defects employing the Bethe-Salpeter equation. Strain locally shifts excitonic energy levels into the band gap where they overlap with localized intragap defect states. The resulting hybridization allows for efficient filling and subsequent radiative decay of the defect states. We identify intervalley defect excitonic states as the likely candidate for antibunched single-photon emission. This proposed scenario is shown to account for a large variety of experimental observations including brightness, radiative transition rates, the variation of the excitonic energy with applied magnetic and electric fields as well as the variation of the polarization of the emitted photon with the magnetic field.
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Affiliation(s)
- Lukas Linhart
- Institute for Theoretical Physics, Vienna University of Technology, 1040 Vienna, Austria, EU
| | - Matthias Paur
- Institute of Photonics, Vienna University of Technology, 1040 Vienna, Austria, EU
| | - Valerie Smejkal
- Institute for Theoretical Physics, Vienna University of Technology, 1040 Vienna, Austria, EU
| | - Joachim Burgdörfer
- Institute for Theoretical Physics, Vienna University of Technology, 1040 Vienna, Austria, EU
| | - Thomas Mueller
- Institute of Photonics, Vienna University of Technology, 1040 Vienna, Austria, EU
| | - Florian Libisch
- Institute for Theoretical Physics, Vienna University of Technology, 1040 Vienna, Austria, EU
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22
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Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip. Nat Commun 2019; 10:4435. [PMID: 31570712 PMCID: PMC6768863 DOI: 10.1038/s41467-019-12421-0] [Citation(s) in RCA: 61] [Impact Index Per Article: 12.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/08/2019] [Accepted: 09/04/2019] [Indexed: 12/24/2022] Open
Abstract
Photonic integrated circuits (PICs) enable the miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Integrated single photon emitters (SPEs) are central building blocks for such quantum photonic circuits. SPEs embedded in 2D transition metal dichalcogenides have some unique properties that make them particularly appealing for large-scale integration. Here we report on the integration of a WSe2 monolayer onto a Silicon Nitride (SiN) chip. We demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity. Our approach allows the use of optimized PIC platforms without the need for additional processing in the SPE host material. In combination with improved wafer-scale CVD growth of 2D materials, this approach provides a promising route towards scalable quantum photonic chips. Integration of photonic circuits with single photon emitters provides a promising route towards scalable quantum photonic chips. Here, the authors integrate a WSe2 monolayer onto a SiN chip and demonstrate the coupling of single photon emitters in WSe2 with the guided mode of a SiN waveguide.
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23
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Lee SH, Jeong H, Kim DY, Seo SY, Han C, Okello OFN, Lo JI, Peng YC, Oh CH, Lee GW, Shim JI, Cheng BM, Song K, Choi SY, Jo MH, Kim JK. Electroluminescence from h-BN by using Al 2O 3/h-BN multiple heterostructure. OPTICS EXPRESS 2019; 27:19692-19701. [PMID: 31503725 DOI: 10.1364/oe.27.019692] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2019] [Accepted: 06/15/2019] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2-D) hexagonal boron nitride (h-BN) has attracted considerable attention for deep ultraviolet optoelectronics and visible single photon sources, however, realization of an electrically-driven light emitter remains challenging due to its wide bandgap nature. Here, we report electrically-driven visible light emission with a red-shift under increasing electric field from a few layer h-BN by employing a five-period Al2O3/h-BN multiple heterostructure and a graphene top electrode. Investigation of electrical properties reveals that the Al2O3 layers act as potential barriers confining injected carriers within the h-BN wells, while suppressing the electrostatic breakdown by trap-assisted tunneling, to increase the probability of radiative recombination. The result highlights a promising potential of such multiple heterostructure as a practical and efficient platform for electrically-driven light emitters based on wide bandgap two-dimensional materials.
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24
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Schädler KG, Ciancico C, Pazzagli S, Lombardi P, Bachtold A, Toninelli C, Reserbat-Plantey A, Koppens FHL. Electrical Control of Lifetime-Limited Quantum Emitters Using 2D Materials. NANO LETTERS 2019; 19:3789-3795. [PMID: 31074994 DOI: 10.1021/acs.nanolett.9b00916] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Solid-state quantum emitters are a mainstay of quantum nanophotonics as integrated single-photon sources (SPS) and optical nanoprobes. Integrating such emitters with active nanophotonic elements is desirable in order to attain efficient control of their optical properties, but it typically degrades the photostability of the emitter itself. Here, we demonstrate a tunable hybrid device that integrates state of the art lifetime-limited single emitters (line width ∼40 MHz) and 2D materials at subwavelength separation without degradation of the emission properties. Our device's nanoscale dimensions enable ultrabroadband tuning (tuning range >400 GHz) and fast modulation (frequency ∼100 MHz) of the emission energy, which renders it an integrated, ultracompact tunable SPS. Conversely, this offers a novel approach to optical sensing of 2D material properties using a single emitter as a nanoprobe.
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Affiliation(s)
- Kevin G Schädler
- ICFO - Institut de Ciencies Fotoniques , The Barcelona Institute of Science and Technology , 08860 Castelldefels , Spain
| | - Carlotta Ciancico
- ICFO - Institut de Ciencies Fotoniques , The Barcelona Institute of Science and Technology , 08860 Castelldefels , Spain
| | - Sofia Pazzagli
- LENS and CNR-INO , Via Nello Carrara 1 , 50019 Sesto Fiorentino , Italy
- Dipartimento di Fisica ed Astronomia , Università di Firenze , Via Sansone 1 , 50019 Sesto Fiorentino , Italy
| | - Pietro Lombardi
- LENS and CNR-INO , Via Nello Carrara 1 , 50019 Sesto Fiorentino , Italy
| | - Adrian Bachtold
- ICFO - Institut de Ciencies Fotoniques , The Barcelona Institute of Science and Technology , 08860 Castelldefels , Spain
| | - Costanza Toninelli
- LENS and CNR-INO , Via Nello Carrara 1 , 50019 Sesto Fiorentino , Italy
- QSTAR , Largo Fermi 2 , 50125 Firenze , Italy
| | - Antoine Reserbat-Plantey
- ICFO - Institut de Ciencies Fotoniques , The Barcelona Institute of Science and Technology , 08860 Castelldefels , Spain
| | - Frank H L Koppens
- ICFO - Institut de Ciencies Fotoniques , The Barcelona Institute of Science and Technology , 08860 Castelldefels , Spain
- ICREA - Institució Catalana de Recerça i Estudis Avancats , 08010 Barcelona , Spain
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25
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Brotons-Gisbert M, Branny A, Kumar S, Picard R, Proux R, Gray M, Burch KS, Watanabe K, Taniguchi T, Gerardot BD. Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir. NATURE NANOTECHNOLOGY 2019; 14:442-446. [PMID: 30858522 DOI: 10.1038/s41565-019-0402-5] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2018] [Accepted: 02/08/2019] [Indexed: 06/09/2023]
Abstract
Gate-tunable quantum-mechanical tunnelling of particles between a quantum confined state and a nearby Fermi reservoir of delocalized states has underpinned many advances in spintronics and solid-state quantum optics. The prototypical example is a semiconductor quantum dot separated from a gated contact by a tunnel barrier. This enables Coulomb blockade, the phenomenon whereby electrons or holes can be loaded one-by-one into a quantum dot1,2. Depending on the tunnel-coupling strength3,4, this capability facilitates single spin quantum bits1,2,5 or coherent many-body interactions between the confined spin and the Fermi reservoir6,7. Van der Waals (vdW) heterostructures, in which a wide range of unique atomic layers can easily be combined, offer novel prospects to engineer coherent quantum confined spins8,9, tunnel barriers down to the atomic limit10 or a Fermi reservoir beyond the conventional flat density of states11. However, gate-control of vdW nanostructures12-16 at the single particle level is needed to unlock their potential. Here we report Coulomb blockade in a vdW heterostructure consisting of a transition metal dichalcogenide quantum dot coupled to a graphene contact through an atomically thin hexagonal boron nitride (hBN) tunnel barrier. Thanks to a tunable Fermi reservoir, we can deterministically load either a single electron or a single hole into the quantum dot. We observe hybrid excitons, composed of localized quantum dot states and delocalized continuum states, arising from ultra-strong spin-conserving tunnel coupling through the atomically thin tunnel barrier. Probing the charged excitons in applied magnetic fields, we observe large gyromagnetic ratios (∼8). Our results establish a foundation for engineering next-generation devices to investigate either novel regimes of Kondo physics or isolated quantum bits in a vdW heterostructure platform.
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Affiliation(s)
- Mauro Brotons-Gisbert
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK.
| | - Artur Branny
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
- Department of Applied Physics, Royal Institute of Technology, Stockholm, Sweden
| | - Santosh Kumar
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
- Indian Institute of Technology, Goa GEC Campus, Ponda, Goa, India
| | - Raphaël Picard
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
| | - Raphaël Proux
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
| | - Mason Gray
- Boston College Department of Physics, Chestnut Hill, MA, USA
| | - Kenneth S Burch
- Boston College Department of Physics, Chestnut Hill, MA, USA
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Japan
| | | | - Brian D Gerardot
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK.
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26
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Ciccarino CJ, Chakraborty C, Englund DR, Narang P. Carrier dynamics and spin-valley-layer effects in bilayer transition metal dichalcogenides. Faraday Discuss 2019; 214:175-188. [PMID: 30816899 DOI: 10.1039/c8fd00159f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Transition metal dichalcogenides are an interesting class of low dimensional materials in mono- and few-layer form with diverse applications in valleytronic, optoelectronic and quantum devices. Therefore, the general nature of the band-edges and the interplay with valley dynamics is important from a fundamental and technological standpoint. Bilayers introduce interlayer coupling effects which can have a significant impact on the valley polarization. The combined effect of spin-orbit and interlayer coupling can strongly modify the band structure, phonon interactions and overall carrier dynamics in the material. Here we use first-principles calculations of electron-electron and electron-phonon interactions to investigate bilayer MoS2 and WSe2 in both the AA' and AB stacking configurations. We find that in addition to spin-orbit coupling, interlayer interactions present in the two configurations significantly alter the near-band-edge dynamics. Scattering lifetimes and dynamic behavior are highly material-dependent, despite the similarities and typical trends in TMDCs. Additionally, we capture significant differences in dynamics for the AA' and AB stacking configurations, with lifetime values differing by up to an order of magnitude between them for MoS2. Further, we evaluate the valley polarization times and find that maximum lifetimes at room temperature are of the scale of 1 picosecond for WSe2 in the AB orientation. These results present a pathway to understanding complex heterostructure configurations and 'magic angle' physics in TMDCs.
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Affiliation(s)
- Christopher J Ciccarino
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA. and Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA, USA
| | - Chitraleema Chakraborty
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA. and Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Dirk R Englund
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Prineha Narang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, USA.
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27
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Mendelson N, Xu ZQ, Tran TT, Kianinia M, Scott J, Bradac C, Aharonovich I, Toth M. Engineering and Tuning of Quantum Emitters in Few-Layer Hexagonal Boron Nitride. ACS NANO 2019; 13:3132-3140. [PMID: 30715854 DOI: 10.1021/acsnano.8b08511] [Citation(s) in RCA: 46] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Quantum technologies require robust and photostable single photon emitters (SPEs). Hexagonal boron nitride (hBN) has recently emerged as a promising candidate to host bright and optically stable SPEs operating at room temperature. However, the emission wavelength of the fluorescent defects in hBN has, to date, been shown to be uncontrolled, with a widespread of zero phonon line (ZPL) energies spanning a broad spectral range (hundreds of nanometers), which hinders the potential development of hBN-based devices and applications. Here we demonstrate chemical vapor deposition growth of large-area, few-layer hBN films that host large quantities of SPEs: ∼100-200 per 10 × 10 μm2. More than 85% of the emitters have a ZPL at (580 ± 10) nm, a distribution that is an order of magnitude narrower than reported previously. Furthermore, we demonstrate tuning of the ZPL wavelength using ionic liquid devices over a spectral range of up to 15 nm-the largest obtained to date from any solid-state SPE. The fabricated devices illustrate the potential of hBN for the development of hybrid quantum nanophotonic and optoelectronic devices based on two-dimensional materials.
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Affiliation(s)
- Noah Mendelson
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Zai-Quan Xu
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Toan Trong Tran
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Mehran Kianinia
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - John Scott
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Carlo Bradac
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Igor Aharonovich
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Milos Toth
- Institute of Biomedical Materials and Devices, Faculty of Science , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
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28
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Verzhbitskiy I, Vella D, Watanabe K, Taniguchi T, Eda G. Suppressed Out-of-Plane Polarizability of Free Excitons in Monolayer WSe 2. ACS NANO 2019; 13:3218-3224. [PMID: 30768242 DOI: 10.1021/acsnano.8b08905] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Monolayer semiconductors are atomically thin quantum wells with strong confinement of electrons in a two-dimensional (2D) plane. Here, we experimentally study the out-of-plane polarizability of excitons in hBN-encapsulated monolayer WSe2 in strong electric fields of up to 1.6 V/nm (16 MV/cm). We monitor free exciton photoluminescence peaks with increasing electric fields at a constant carrier density, carefully compensating for unintentional photodoping in our double-gated device at 4 K. We show that the Stark shift is smaller than 0.4 meV despite the large electric fields applied, yielding an upper limit of polarizability α z to be ∼10-11 Dm/V. Such a small polarizability, which is nearly two orders of magnitude smaller than the previously reported value for MoS2, indicates strong atomic confinement of electrons in this 2D system and highlights the unusual robustness of free excitons against surface potential fluctuations.
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Affiliation(s)
- Ivan Verzhbitskiy
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117551 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , 2 Science Drive 2 , Singapore 117542 , Singapore
| | - Daniele Vella
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117551 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , 2 Science Drive 2 , Singapore 117542 , Singapore
| | - Kenji Watanabe
- National Institute for Material Science , 1-1 Namiki , Tsukuba 305-0044 , Japan
| | - Takashi Taniguchi
- National Institute for Material Science , 1-1 Namiki , Tsukuba 305-0044 , Japan
| | - Goki Eda
- Department of Physics , National University of Singapore , 2 Science Drive 3 , Singapore 117551 , Singapore
- Centre for Advanced 2D Materials , National University of Singapore , 2 Science Drive 2 , Singapore 117542 , Singapore
- Department of Chemistry , National University of Singapore , 3 Science Drive 3 , Singapore 117543 , Singapore
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29
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Abstract
Layered materials are very attractive for studies of light-matter interactions at the nanoscale. In particular, isolated quantum systems such as color centers and quantum dots embedded in these materials are gaining interest due to their potential use in a variety of quantum technologies and nanophotonics. Here, we review the field of nonclassical light emission from van der Waals crystals and atomically thin two-dimensional materials. We focus on transition metal dichalcogenides and hexagonal boron nitride and discuss the fabrication and properties of quantum emitters in these systems and proof-of-concept experiments that provide a foundation for their integration in on-chip nanophotonic circuits. These experiments include tuning of the emission wavelength, electrical excitation, and coupling of the emitters to waveguides, dielectric cavities, and plasmonic resonators. Finally, we discuss current challenges in the field and provide an outlook to further stimulate scientific discussion.
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Affiliation(s)
- Milos Toth
- Institute of Biomedical Materials and Devices, University of Technology Sydney, Ultimo, New South Wales 2007, Australia; ,
| | - Igor Aharonovich
- Institute of Biomedical Materials and Devices, University of Technology Sydney, Ultimo, New South Wales 2007, Australia; ,
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30
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Le PTT, Hieu NN, Bui LM, Phuc HV, Hoi BD, Amin B, Nguyen CV. Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field. Phys Chem Chem Phys 2018; 20:27856-27864. [PMID: 30398248 DOI: 10.1039/c8cp05588b] [Citation(s) in RCA: 55] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Combining van der Waals heterostructures by stacking different two-dimensional materials on top of each other layer-by-layer can enhance their desired properties and greatly extend the applications of the parent materials. In this work, by means of first principles calculations, we investigate systematically the structural and electronic properties of six different stacking configurations of a Si/GaSe heterostructure. The effect of biaxial strain and electric field on the electronic properties of the most energetically stable configuration of the Si/GaSe heterostructure has also been discussed. At the equilibrium state, the electronic properties of the Si/GaSe heterostructure in all its stacking configurations are well kept as compared with that of single layers owing to their weak van der Waals interactions. Interestingly, we find that a sizable band gap is opened at the Dirac K point of silicene in the Si/GaSe heterostructure, which could be further controlled by biaxial strain or electric field. These findings open up a possibility for designing silicene-based electronic devices, which exhibit a controllable band gap. Furthermore, the Si/GaSe heterostructure forms an n-type Schottky contact with a small Schottky barrier height of 0.23 eV. A transformation from the n-type Schottky contact to a p-type one, or from the Schottky contact to an ohmic contact may occur in the Si/GaSe heterostructure when strain or an electric field is applied.
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Affiliation(s)
- P T T Le
- Theoretical Physics Research Group, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City, Viet Nam.
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31
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Noh G, Choi D, Kim JH, Im DG, Kim YH, Seo H, Lee J. Stark Tuning of Single-Photon Emitters in Hexagonal Boron Nitride. NANO LETTERS 2018; 18:4710-4715. [PMID: 29932664 DOI: 10.1021/acs.nanolett.8b01030] [Citation(s) in RCA: 55] [Impact Index Per Article: 9.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Single-photon emitters play an essential role in quantum technologies, including quantum computing and quantum communications. Atomic defects in hexagonal boron nitride ( h-BN) have recently emerged as new room-temperature single-photon emitters in solid-state systems, but the development of scalable and tunable h-BN single-photon emitters requires external methods that can control the emission energy of individual defects. Here, by fabricating van der Waals heterostructures of h-BN and graphene, we demonstrate the electrical control of single-photon emission from atomic defects in h-BN via the Stark effect. By applying an out-of-plane electric field through graphene gates, we observed Stark shifts as large as 5.4 nm per GV/m. The Stark shift generated upon a vertical electric field suggests the existence of out-of-plane dipole moments associated with atomic defect emitters, which is supported by first-principles theoretical calculations. Furthermore, we found field-induced discrete modification and stabilization of emission intensity, which were reversibly controllable with an external electric field.
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Affiliation(s)
- Gichang Noh
- Department of Physics and Department of Energy Systems Research , Ajou University , Suwon 16499 , Korea
| | - Daebok Choi
- Department of Physics and Department of Energy Systems Research , Ajou University , Suwon 16499 , Korea
| | - Jin-Hun Kim
- Department of Physics , Pohang University of Science and Technology (POSTECH) , Pohang 37673 , Korea
| | - Dong-Gil Im
- Department of Physics , Pohang University of Science and Technology (POSTECH) , Pohang 37673 , Korea
| | - Yoon-Ho Kim
- Department of Physics , Pohang University of Science and Technology (POSTECH) , Pohang 37673 , Korea
| | - Hosung Seo
- Department of Physics and Department of Energy Systems Research , Ajou University , Suwon 16499 , Korea
| | - Jieun Lee
- Department of Physics and Department of Energy Systems Research , Ajou University , Suwon 16499 , Korea
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32
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Ngoc My Duong H, Nguyen MAP, Kianinia M, Ohshima T, Abe H, Watanabe K, Taniguchi T, Edgar JH, Aharonovich I, Toth M. Effects of High-Energy Electron Irradiation on Quantum Emitters in Hexagonal Boron Nitride. ACS APPLIED MATERIALS & INTERFACES 2018; 10:24886-24891. [PMID: 29882642 DOI: 10.1021/acsami.8b07506] [Citation(s) in RCA: 30] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Hexagonal boron nitride (hBN) mono and multilayers are promising hosts for room-temperature single photon emitters (SPEs). In this work we explore high-energy (∼MeV) electron irradiation as a means to generate stable SPEs in hBN. We investigate four types of exfoliated hBN flakes-namely, high-purity multilayers, isotopically pure hBN, carbon-rich hBN multilayers and monolayered material-and find that electron irradiation increases emitter concentrations dramatically in all samples. Furthermore, the engineered emitters are located throughout hBN flakes (not only at flake edges or grain boundaries) and do not require activation by high-temperature annealing of the host material after electron exposure. Our results provide important insights into controlled formation of hBN SPEs and may aid in identification of their crystallographic origin.
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Affiliation(s)
- Hanh Ngoc My Duong
- School of Mathematical and Physical Sciences , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Minh Anh Phan Nguyen
- School of Mathematical and Physical Sciences , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Takeshi Ohshima
- National Institutes for Quantum and Radiological Science and Technology , 1233 Watanuki , Takasaki , Gunma 370-1292 , Japan
| | - Hiroshi Abe
- National Institutes for Quantum and Radiological Science and Technology , 1233 Watanuki , Takasaki , Gunma 370-1292 , Japan
| | - Kenji Watanabe
- National Institute for Materials Science , 1-1 Namiki , Tsukuba , Ibaraki 305-0044 Japan
| | - Takashi Taniguchi
- National Institute for Materials Science , 1-1 Namiki , Tsukuba , Ibaraki 305-0044 Japan
| | - James H Edgar
- Department of Chemical Engineering, Durland Hall , Kansas State University , Manhattan , Kansas 66506 , United States
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences , University of Technology Sydney , Ultimo , New South Wales 2007 , Australia
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33
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Chakraborty C, Qiu L, Konthasinghe K, Mukherjee A, Dhara S, Vamivakas N. 3D Localized Trions in Monolayer WSe 2 in a Charge Tunable van der Waals Heterostructure. NANO LETTERS 2018; 18:2859-2863. [PMID: 29589758 DOI: 10.1021/acs.nanolett.7b05409] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDCs) have recently emerged as a host material for localized optically active quantum emitters that generate single photons. (1-5) Here, we investigate fully localized excitons and trions from such TMDC quantum emitters embedded in a van der Waals heterostructure. We use direct electrostatic doping through the vertical heterostructure device assembly to generate quantum confined trions. Distinct spectral jumps as a function of applied voltage bias, and excitation power-dependent charging, demonstrate the observation of the two different excitonic complexes. We also observe a reduction of the intervalley electron-hole exchange interaction in the confined trion due to the addition of an extra electron, which is manifested by a decrease in its fine structure splitting. We further confirm this decrease of exchange interaction for the case of the charged states by a comparative study of the circular polarization resolved photoluminescence from individual excitonic states. The valley polarization selection rules inherited by the localized trions will provide a pathway toward realizing a localized spin-valley-photon interface.
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Affiliation(s)
- Chitraleema Chakraborty
- Materials Science , University of Rochester , Rochester , New York 14627 , United States
- Center for Coherence and Quantum Optics , University of Rochester , Rochester , New York 14627 , United States
| | - Liangyu Qiu
- Center for Coherence and Quantum Optics , University of Rochester , Rochester , New York 14627 , United States
- Institute of Optics , University of Rochester , Rochester , New York 14627 , United States
| | - Kumarasiri Konthasinghe
- Center for Coherence and Quantum Optics , University of Rochester , Rochester , New York 14627 , United States
- Institute of Optics , University of Rochester , Rochester , New York 14627 , United States
| | - Arunabh Mukherjee
- Center for Coherence and Quantum Optics , University of Rochester , Rochester , New York 14627 , United States
- Institute of Optics , University of Rochester , Rochester , New York 14627 , United States
| | - Sajal Dhara
- Center for Coherence and Quantum Optics , University of Rochester , Rochester , New York 14627 , United States
- Institute of Optics , University of Rochester , Rochester , New York 14627 , United States
- Department of Physics , Indian Institute of Technology , Kharagpur 721302 , India
| | - Nick Vamivakas
- Materials Science , University of Rochester , Rochester , New York 14627 , United States
- Center for Coherence and Quantum Optics , University of Rochester , Rochester , New York 14627 , United States
- Institute of Optics , University of Rochester , Rochester , New York 14627 , United States
- Department of Physics , University of Rochester , Rochester , New York 14627 , United States
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Wu Y, Huang Z, Liu H, He C, Xue L, Qi X, Zhong J. Transition metal atoms absorbed on MoS2/h-BN heterostructure: stable geometries, band structures and magnetic properties. Phys Chem Chem Phys 2018; 20:17387-17392. [DOI: 10.1039/c8cp02232a] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We have studied the stable geometries, band structures and magnetic properties of transition-metal (V, Cr, Mn, Fe, Co and Ni) atoms absorbed on MoS2/h-BN heterostructure systems by first-principles calculations.
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Affiliation(s)
- Yanbing Wu
- School of Physics and Optoelectronic
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices
- Xiangtan University
- Hunan 411105
- P. R. China
| | - Zongyu Huang
- School of Physics and Optoelectronic
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices
- Xiangtan University
- Hunan 411105
- P. R. China
| | - Huating Liu
- School of Physics and Optoelectronic
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices
- Xiangtan University
- Hunan 411105
- P. R. China
| | - Chaoyu He
- School of Physics and Optoelectronic
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices
- Xiangtan University
- Hunan 411105
- P. R. China
| | - Lin Xue
- College of Physics and Optoelectronics
- Taiyuan University of Technology
- Taiyuan 030024
- P. R. China
| | - Xiang Qi
- School of Physics and Optoelectronic
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices
- Xiangtan University
- Hunan 411105
- P. R. China
| | - Jianxin Zhong
- School of Physics and Optoelectronic
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices
- Xiangtan University
- Hunan 411105
- P. R. China
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Tian XQ, Wang XR, Wei YD, Liu L, Gong ZR, Gu J, Du Y, Yakobson BI. Highly Tunable Electronic Structures of Phosphorene/Carbon Nanotube Heterostructures through External Electric Field and Atomic Intercalation. NANO LETTERS 2017; 17:7995-8004. [PMID: 29191020 DOI: 10.1021/acs.nanolett.7b04562] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Black phosphorene (BP)/carbon nanotube (CNT) heterostructures can be classified as either type I or II, depending on the size of the CNTs. An external electric field (Eext) can modulate the interfacial electronic structures and separate the electron and hole carriers of the BP/CNT heterostructures. The giant Stark effect is observed, and the band gap of the semiconducting heterostructures can vary several-fold. The intercalation of 3d transition metals can strongly bond BP and CNTs together. Furthermore, strong ferromagnetism with Curie temperature (TC) above room temperature is predicted. It is expected that these BP/CNT heterostructures will provide new opportunities and applications in the fields of optoelectronics and electronics as well as spintronics.
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Affiliation(s)
- Xiao-Qing Tian
- College of Physics and Energy, Shenzhen University , Shenzhen 518060, Guangdong, P.R. China
- Department of Physics, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong
| | - Xiang-Rong Wang
- Department of Physics, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong
- HKUST Shenzhen Research Institute , Shenzhen 518057, China
| | - Ya-Dong Wei
- College of Physics and Energy, Shenzhen University , Shenzhen 518060, Guangdong, P.R. China
| | - Lin Liu
- College of Physics and Energy, Shenzhen University , Shenzhen 518060, Guangdong, P.R. China
| | - Zhi-Rui Gong
- College of Physics and Energy, Shenzhen University , Shenzhen 518060, Guangdong, P.R. China
| | - Juan Gu
- College of Physics and Energy, Shenzhen University , Shenzhen 518060, Guangdong, P.R. China
| | - Yu Du
- College of Physics and Energy, Shenzhen University , Shenzhen 518060, Guangdong, P.R. China
| | - Boris I Yakobson
- Department of Materials Science and NanoEngineering, Department of Chemistry, and the Smalley Institute for Nanoscale Science and Technology, Rice University , Houston, Texas 77005, United States
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Tonndorf P, Del Pozo-Zamudio O, Gruhler N, Kern J, Schmidt R, Dmitriev AI, Bakhtinov AP, Tartakovskii AI, Pernice W, Michaelis de Vasconcellos S, Bratschitsch R. On-Chip Waveguide Coupling of a Layered Semiconductor Single-Photon Source. NANO LETTERS 2017; 17:5446-5451. [PMID: 28796522 DOI: 10.1021/acs.nanolett.7b02092] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Fully integrated quantum technology based on photons is in the focus of current research, because of its immense potential concerning performance and scalability. Ideally, the single-photon sources, the processing units, and the photon detectors are all combined on a single chip. Impressive progress has been made for on-chip quantum circuits and on-chip single-photon detection. In contrast, nonclassical light is commonly coupled onto the photonic chip from the outside, because presently only few integrated single-photon sources exist. Here, we present waveguide-coupled single-photon emitters in the layered semiconductor gallium selenide as promising on-chip sources. GaSe crystals with a thickness below 100 nm are placed on Si3N4 rib or slot waveguides, resulting in a modified mode structure efficient for light coupling. Using optical excitation from within the Si3N4 waveguide, we find nonclassicality of generated photons routed on the photonic chip. Thus, our work provides an easy-to-implement and robust light source for integrated quantum technology.
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Affiliation(s)
- Philipp Tonndorf
- Institute of Physics and Center for Nanotechnology, University of Münster , 48149 Münster, Germany
| | - Osvaldo Del Pozo-Zamudio
- Institute of Physics and Center for Nanotechnology, University of Münster , 48149 Münster, Germany
| | - Nico Gruhler
- Institute of Physics and Center for Nanotechnology, University of Münster , 48149 Münster, Germany
| | - Johannes Kern
- Institute of Physics and Center for Nanotechnology, University of Münster , 48149 Münster, Germany
| | - Robert Schmidt
- Institute of Physics and Center for Nanotechnology, University of Münster , 48149 Münster, Germany
| | - Alexander I Dmitriev
- I. M. Frantsevich Institute for Problems of Material Science, NASU , Kiev-142, Ukraine
| | - Anatoly P Bakhtinov
- I. M. Frantsevich Institute for Problems of Material Science, NASU , Kiev-142, Ukraine
| | | | - Wolfram Pernice
- Institute of Physics and Center for Nanotechnology, University of Münster , 48149 Münster, Germany
| | | | - Rudolf Bratschitsch
- Institute of Physics and Center for Nanotechnology, University of Münster , 48149 Münster, Germany
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