Gate-Tunable Giant Stark Effect in Few-Layer Black Phosphorus

Infrared optoelectronics in twisted black phosphorus

Electrons and holes, fundamental charge carriers in semiconductors, dominate optical transitions and detection processes. Twisted van der Waals (vdW) heterostructures offer an effective approach to manipulate radiation, separation, and collection processes of electron-hole pairs by creating an atomically sharp interface. Here, we demonstrate that twisted interfaces in vdW layered black phosphorus (BP), an infrared semiconductor with highly anisotropic crystalline structure and properties, can significantly alter both recombination and separation processes of electron-hole pairs. On the one hand, the twisted interface breaks the symmetry of optical transition states resulting in infrared light emission of originally symmetry-forbidden optical states along the zigzag direction. On the other hand, spontaneous electronic polarization/bulk photovoltaic effect is generated at the twisted interface enabling effective separation of electron-hole pairs without external voltage bias. This is supported by first-principles calculations and repeated experiments at various twisted angles from 0 to 90°. Importantly, these phenomena can be observed in twisted heterostructures with thickness beyond two-dimensional. Our results suggest that the engineering of vdW twisted interfaces is an effective strategy for manipulating the optoelectronic properties of materials and constructing functional devices.

Diagnosis and therapy of Alzheimer's disease: Light-driven heterogeneous redox processes

Light-driven heterogeneous processes are promising approaches for diagnosing and treating Alzheimer's disease (AD) by regulating its relevant biomolecules. The molecular understanding of the heterogeneous interface environment and its interaction with target biomolecules is important. This review critically appraises the advances in AD early diagnosis and therapy employing heterogeneous light-driven redox processes, encompassing photoelectrochemical (PEC) biosensing, photodynamic therapy, photothermal therapy, PEC therapy, and photoacoustic therapy. The design strategies for heterogeneous interfaces based on target biomolecules and applications are also compiled. Finally, the remaining challenges and future perspectives are discussed. The present review may promote the fundamental understanding of AD diagnosis and therapy and facilitate interdisciplinary studies at the junction of nanotechnology and bioscience.

Electrostatic Gating of Phosphorene Polymorphs

The ability to directly monitor the states of electrons in modern field-effect transistors (FETs) could transform our understanding of the physics and improve the function of related devices. In particular, phosphorene allotropes present a fertile landscape for the development of high-performance FETs. Using density functional theory-based methods, we have systematically investigated the influence of electrostatic gating on the structures, stabilities, and fundamental electronic properties of pristine and carbon-doped monolayer (bilayer) phosphorene allotropes. The remarkable flexibility of phosphorene allotropes, arising from intra- and interlayer van der Waals interactions, causes a good resilience up to equivalent gate potential of two electrons per unit cell. The resilience depends on the stacking details in such a way that rotated bilayers show considerably higher thermodynamical stability than the unrotated ones, even at a high gate potential. In addition, a semiconductor to metal phase transition is observed in some of the rotated and carbon-doped structures with increased electronic transport relative to graphene in the context of real space Green's function formalism.

Room-Temperature Self-Powered Infrared Spectrometer Based on a Single Black Phosphorus Heterojunction Diode

Infrared spectrometers with the ability to resolve the spectral intensity and wavelength simultaneously are widely used in industry and the laboratory. However, their huge volume, high price, and cryogenic operating temperature limit their applications in the rapidly developing field of portable devices. Here, we demonstrate a room-temperature self-powered infrared spectrometer based on a single black phosphorus (BP) heterojunction diode. The nonlinearly gate-tunable photocurrent spectrum involving quantum-confined Franz-Keldysh and Burstein-Moss effects in a single BP/MoS2 diode instead of using space-consuming detector arrays provides a new dimension for resolving the intensity and wavelength information of spectra simultaneously. The active area for spectral sensing is only 1500 μm2, and the photodetection range is from 1.7 to 3.6 μm. Room-temperature operation, micrometer-scale size, and silicon-compatible technology make the BP/MoS2 heterojunction a promising configuration for portable spectrometer applications.

Recent Advances in Phosphorene: Structure, Synthesis, and Properties

Phosphorene is a 2D phosphorus atomic layer arranged in a honeycomb lattice like graphene but with a buckled structure. Since its exfoliation from black phosphorus in 2014, phosphorene has attracted tremendous research interest both in terms of synthesis and fundamental research, as well as in potential applications. Recently, significant attention in phosphorene is motivated not only by research on its fundamental physical properties as a novel 2D semiconductor material, such as tunable bandgap, strong in-plane anisotropy, and high carrier mobility, but also by the study of its wide range of potential applications, such as electronic, optoelectronic, and spintronic devices, energy conversion and storage devices. However, a lot of avenues remain to be explored including the fundamental properties of phosphorene and its device applications. This review recalls the current state of the art of phosphorene and its derivatives, touching upon topics on structure, synthesis, characterization, properties, stability, and applications. The current needs and future opportunities for phosphorene are also discussed.

The Stark Effect: A Tool for the Design of High-Performance Molecular Rectifiers

Molecular electronic devices offer a path to the miniaturization of electronic circuits and could potentially facilitate novel functionalities that can be embedded into the molecular structure. Given their nanoscale dimensions, device properties are strongly influenced by quantum effects, yet many of these phenomena have been largely overlooked. We investigated the mechanism responsible for current rectification in molecular diodes and found that efficient rectification is achieved by enhancing the Stark effect strength and enabling a large number of molecules to participate in transport. These findings provided insights into the operation of molecular rectifiers and guided the development of high-performance devices via the design of molecules containing polarizable aromatic rings. Our results are consistent for different molecular structures and are expected to have broad applicability to all molecular devices by answering key questions related to charge transport mechanisms in such systems.

Regulation of Near-Field Radiative Heat Transfer between Multilayer BP/hBN Heterostructures

As an allotrope of phosphorus and a promising 2D semiconductor, black phosphorus (BP) exhibits in-plane anisotropy along its armchair and zigzag crystal directions, allowing for efficient regulation of near-field radiative heat transfer (NFRHT). In this work, we investigate the NFRHT between two multilayer BP/hBN heterostructures and theoretically demonstrate that thermal regulation can be realized by tuning the electron density and rotation angle of BP. Results show that a larger electron density leads to the coupling of anisotropic surface plasmon polaritons (SPPs) of BP with hyperbolic modes of hBN, and rotation of BP changes the anisotropic characteristic of coupled SPPs on both sides, whereby a regulation ratio of 5.8 can be obtained. We also analyze the effects of period number, hBN layer thickness, and topmost-layer material on the NFRHT. This work may be beneficial for efficient nanoscale thermal management and physical understanding of radiative heat transfer based on anisotropic SPPs.

Layer-dependent exciton polarizability and the brightening of dark excitons in few-layer black phosphorus

The evolution of excitons from 2D to 3D is of great importance in photo-physics, yet the layer-dependent exciton polarizability hasn't been investigated in 2D semiconductors. Here, we determine the exciton polarizabilities for 3- to 11-layer black phosphorus-a direct bandgap semiconductor regardless of the thickness-through frequency-resolved photocurrent measurements on dual-gate devices and unveil the carrier screening effect in relatively thicker samples. By taking advantage of the broadband photocurrent spectra, we are also able to reveal the exciton response for higher-index subbands under the gate electrical field. Surprisingly, dark excitons are brightened with intensity even stronger than the allowed transitions above certain electrical field. Our study not only sheds light on the exciton evolution with sample thickness, but also paves a way for optoelectronic applications of few-layer BP in modulators, tunable photodetectors, emitters and lasers.

Black Phosphorus for Photonic Integrated Circuits

Black phosphorus gives several advantages and complementarities over other two-dimensional materials. It has drawn extensive interest owing to its relatively high carrier mobility, wide tunable bandgap, and in-plane anisotropy in recent years. This manuscript briefly reviews the structure and physical properties of black phosphorus and targets on black phosphorus for photonic integrated circuits. Some of the applications are discussed including photodetection, optical modulation, light emission, and polarization conversion. Corresponding recent progresses, associated challenges, and future potentials are covered.

Electronic Structure of Few-Layer Black Phosphorus from μ-ARPES

Black phosphorus (BP) stands out among two-dimensional (2D) semiconductors because of its high mobility and thickness dependent direct band gap. However, the quasiparticle band structure of ultrathin BP has remained inaccessible to experiment thus far. Here we use a recently developed laser-based microfocus angle resolved photoemission (μ-ARPES) system to establish the electronic structure of 2-9 layer BP from experiment. Our measurements unveil ladders of anisotropic, quantized subbands at energies that deviate from the scaling observed in conventional semiconductor quantum wells. We quantify the anisotropy of the effective masses and determine universal tight-binding parameters, which provide an accurate description of the electronic structure for all thicknesses.

Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As[Formula: see text]P[Formula: see text] gate layer

We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As[Formula: see text]P[Formula: see text]) gate barrier layer. The operation of the GC-FET detectors is associated with the carrier heating in the GC by the THz electric field resonantly excited by incoming radiation leading to an increase in the rectified current between the channel and the gate over the b-As[Formula: see text]P[Formula: see text] energy barrier layer (BLs). The specific feature of the GC-FETs under consideration is relatively low energy BLs and the possibility to optimize the device characteristics by choosing the barriers containing a necessary number of the b-As[Formula: see text]P[Formula: see text] atomic layers and a proper gate voltage. The excitation of the plasma oscillations in the GC-FETs leads to the resonant reinforcement of the carrier heating and the enhancement of the detector responsivity. The room temperature responsivity can exceed the values of [Formula: see text] A/W. The speed of the GC-FET detector's response to the modulated THz radiation is determined by the processes of carrier heating. As shown, the modulation frequency can be in the range of several GHz at room temperatures.

The Interaction of 2D Materials With Circularly Polarized Light

2D materials (2DMs), due to spin-valley locking degree of freedom, exhibit strongly bound exciton and chiral optical selection rules and become promising material candidates for optoelectronic and spin/valleytronic devices. Over the last decade, the manifesting of 2D materials by circularly polarized lights expedites tremendous fascinating phenomena, such as valley/exciton Hall effect, Moiré exciton, optical Stark effect, circular dichroism, circularly polarized photoluminescence, and spintronic property. In this review, recent advance in the interaction of circularly polarized light with 2D materials covering from graphene, black phosphorous, transition metal dichalcogenides, van der Waals heterostructures as well as small proportion of quasi-2D perovskites and topological materials, is overviewed. The confronted challenges and theoretical and experimental opportunities are also discussed, attempting to accelerate the prosperity of chiral light-2DMs interactions.

Measuring Band Modulation of MoS2 with Ferroelectric Gates

Electronic properties of two-dimensional (2D) materials can be significantly tuned by an external electric field. Ferroelectric gates can provide a strong polarization electric field. Here, we report the measurements of the band structure of few-layer MoS₂ modulated by a ferroelectric P(VDF-TrFE) gate with contact-mode scanning tunneling spectroscopy. When P(VDF-TrFE) is fully polarized, an electric field up to ∼0.62 V/nm through the MoS₂ layers is inferred from the measured band edges, which affects the band structure significantly. First, strong band bending in the vertical direction signifies the Franz-Keldysh effect and a large extension of the optical absorption edge. Photons with energy of half the band gap are still absorbed with 20% of the absorption probability of photons at the band gap. Second, the electric field greatly enlarges the energy separations between the quantum-well subbands. Our study intuitively demonstrates the great potential of ferroelectric gates in band structure manipulation of 2D materials.

2D Material Infrared Photonics and Plasmonics

Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.

Surface acoustic wave induced phenomena in two-dimensional materials

Surface acoustic wave (SAW)-matter interaction provides a fascinating key for inducing and manipulating novel phenomena and functionalities in two-dimensional (2D) materials. The dynamic strain field and piezo-electric field associated with propagating SAWs determine the coherent manipulation and transduction between 2D excitons and phonons. Over the past decade, many intriguing acoustic-induced effects, including the acousto-electric effect, acousto-galvanic effect, acoustic Stark effect, acoustic Hall effect and acoustic exciton transport, have been reported experimentally. However, many more phenomena, such as the valley acousto-electric effect, valley acousto-electric Hall effect and acoustic spin Hall effect, were only theoretically proposed, the experimental verification of which are yet to be achieved. In this minireview, we attempt to overview the recent breakthrough of SAW-induced phenomena covering acoustic charge transport, acoustic exciton transport and modulation, and coherent acoustic phonons. Perspectives on the opportunities of the proposed SAW-induced phenomena, as well as open experimental challenges, are also discussed, attempting to offer some guidelines for experimentalists and theorists to explore the desired exotic properties and boost practical applications of 2D materials.

Advanced nanomaterials for modulating Alzheimer's related amyloid aggregation

Alzheimer's disease (AD) is a common neurodegenerative disease that brings about enormous economic pressure to families and society. Inhibiting abnormal aggregation of Aβ and accelerating the dissociation of aggregates is treated as an effective method to prevent and treat AD. Recently, nanomaterials have been applied in AD treatment due to their excellent physicochemical properties and drug activity. As a drug delivery platform or inhibitor, various excellent nanomaterials have exhibited potential in inhibiting Aβ fibrillation, disaggregating, and clearing mature amyloid plaques by enhancing the performance of drugs. This review comprehensively summarizes the advantages and disadvantages of nanomaterials in modulating amyloid aggregation and AD treatment. The design of various functional nanomaterials is discussed, and the strategies for improved properties toward AD treatment are analyzed. Finally, the challenges faced by nanomaterials with different dimensions in AD-related amyloid aggregate modulation are expounded, and the prospects of nanomaterials are proposed.

Tuning lower dimensional superconductivity with hybridization at a superconducting-semiconducting interface

The influence of interface electronic structure is vital to control lower dimensional superconductivity and its applications to gated superconducting electronics, and superconducting layered heterostructures. Lower dimensional superconductors are typically synthesized on insulating substrates to reduce interfacial driven effects that destroy superconductivity and delocalize the confined wavefunction. Here, we demonstrate that the hybrid electronic structure formed at the interface between a lead film and a semiconducting and highly anisotropic black phosphorus substrate significantly renormalizes the superconductivity in the lead film. Using ultra-low temperature scanning tunneling microscopy and spectroscopy, we characterize the renormalization of lead’s quantum well states, its superconducting gap, and its vortex structure which show strong anisotropic characteristics. Density functional theory calculations confirm that the renormalization of superconductivity is driven by hybridization at the interface which modifies the confinement potential and imprints the anisotropic characteristics of the semiconductor substrate on selected regions of the Fermi surface of lead. Using an analytical model, we link the modulated superconductivity to an anisotropy that selectively tunes the superconducting order parameter in reciprocal space. These results illustrate that interfacial hybridization can be used to tune superconductivity in quantum technologies based on lower dimensional superconducting electronics.

Lower-dimensional superconductors are typically synthesized on insulating substrates. Here, the authors find that the hybrid electronic structure formed at the interface between a lead film and a semiconducting black phosphorus substrate significantly renormalizes the superconductivity in the lead film.

Electronic Self-Passivation of Single Vacancy in Black Phosphorus via Ionization

We report that monoelemental black phosphorus presents a new electronic self-passivation scheme of single vacancy (SV). By means of low-temperature scanning tunneling microscopy and noncontact atomic force microscopy, we demonstrate that the local reconstruction and ionization of SV into negatively charged SV^{-} leads to the passivation of dangling bonds and, thus, the quenching of in-gap states, which can be achieved by mild thermal annealing or STM tip manipulation. SV exhibits a strong and symmetric Friedel oscillation (FO) pattern, while SV^{-} shows an asymmetric FO pattern with local perturbation amplitude reduced by one order of magnitude and a faster decay rate. The enhanced passivation by forming SV^{-} can be attributed to its weak dipolelike perturbation, consistent with density-functional theory numerical calculations. Therefore, self-passivated SV^{-} is electrically benign and acts as a much weaker scattering center, which may hold the key to further enhance the charge mobility of black phosphorus and its analogs.

Exciton Emissions in Bilayer WSe2 Tuned by the Ferroelectric Polymer

In this work, a hybrid structure of multilayer transition-metal dichalcogenides (TMDs) and a ferroelectric polymer is designed to achieve passive control of optical properties in situ. The electrical polarization in the ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) polymer can regulate the photoluminescence (PL) in bilayer WSe₂. The total PL emission intensity is substantially suppressed or enhanced under large gate voltage in bilayer WSe₂. This is because electrons transfer between the conduction band K valley and the conduction band Λ valley by the electrostatic field in the P(VDF-TrFE) polymer. This electron transfer further adjusts the proportion of direct and indirect excitons and, in turn, changes the overall optical radiation efficiency. We also illustrate that the engineered PL originates from the external electric-field-dependent transferred electron effect. The theoretical result matches the experimental data well. This work demonstrates a device platform in which passive regulation is achieved using 2D TMDs modulated by polarized ferroelectric materials.

Orbital Gating Driven by Giant Stark Effect in Tunneling Phototransistors

Conventional gating in transistors uses electric fields through external dielectrics that require complex fabrication processes. Various optoelectronic devices deploy photogating by electric fields from trapped charges in neighbor nanoparticles or dielectrics under light illumination. Orbital gating driven by giant Stark effect is demonstrated in tunneling phototransistors based on 2H-MoTe₂ without using external gating bias or slow charge trapping dynamics in photogating. The original self-gating by light illumination modulates the interlayer potential gradient by switching on and off the giant Stark effect where the d_z 2-orbitals of molybdenum atoms play the dominant role. The orbital gating shifts the electronic bands of the top atomic layer of the MoTe₂ by up to 100 meV, which is equivalent to modulation of a carrier density of 7.3 × 10¹¹ cm^-2 by electrical gating. Suppressing conventional photoconductivity, the orbital gating in tunneling phototransistors achieves low dark current, practical photoresponsivity (3357 AW^-1 ), and fast switching time (0.5 ms) simultaneously.

Strain- and electric field-enhanced optical properties of the penta-siligraphene monolayer

The effect of biaxial strain and an external electric field on the optical properties of the penta-siligraphene monolayer are reported.

Field-Dependent Band Structure Measurements in Two-Dimensional Heterostructures

In electronic and optoelectronic devices made from van der Waals heterostructures, electric fields can induce substantial band structure changes which are crucial to device operation but cannot usually be directly measured. Here, we use spatially resolved angle-resolved photoemission spectroscopy to monitor changes in band alignment of the component layers, corresponding to band structure changes of the composite heterostructure system, that are produced by electrostatic gating. Our devices comprise graphene on a monolayer semiconductor, WSe₂ or MoSe₂, atop a boron nitride dielectric and a graphite gate. Applying a gate voltage creates an electric field that shifts the semiconductor bands relative to those in the graphene by up to 0.2 eV. The results can be understood in simple terms by assuming that the materials do not hybridize.

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

The band alignment, interface states, interface coupling, and carrier transport of semiconductor heterojunctions (SHs) need to be well understood for the design and fabrication of various important semiconductor structures and devices. Scanning tunneling microscopy (STM) with high spatial resolution and scanning tunneling spectroscopy (STS) with high energy resolution are significantly contributing to the understanding on the important properties of SHs. In this work, the recent progress on the use of STM and STS to study lateral, vertical and bulk SHs is reviewed. The spatial structures of SHs with atomically flat surface have been examined with STM. The electronic band structures (e. g., the band offset, interface state, and space charge region) of SHs are measured with STS. Combined with the spatial structures and the tunneling spectra features, the mechanism for the carrier transport in the SH may be proposed.

Broadband electro-optic polarization conversion with atomically thin black phosphorus

[Figure: see text].

Charge Transfer Screening and Energy Level Alignment at Complex Organic-Inorganic Interfaces: A Tractable Ab Initio GW Approach

Complex organic-inorganic interfaces are important for device and sensing applications. Charge transfer doping is prevalent in such applications and can affect the interfacial energy level alignments (ELA), which are determined by many-body interactions. We develop an approximate ab initio many-body GW approach that can capture many-body interactions due to interfacial charge transfer. The approach uses significantly less resources than a regular GW calculation but gives excellent agreement with benchmark GW calculations on an F4TCNQ/graphene interface. We find that many-body interactions due to charge transfer screening result in gate-tunable F4TCNQ HOMO-LUMO gaps. We further predict the ELA of a large system of experimental interest-4,4'-bis(dimethylamino)bipyridine (DMAP-OED) on monolayer MoS₂, where charge transfer screening results in an ∼1 eV reduction of the molecular HOMO-LUMO gap. Comparison with a two-dimensional electron gas model reveals the importance of explicitly considering the intraband transitions in determining the charge transfer screening in organic-inorganic interface systems.

Actively variable-spectrum optoelectronics with black phosphorus

Room-temperature optoelectronic devices that operate at short-wavelength and mid-wavelength infrared ranges (one to eight micrometres) can be used for numerous applications^1-5. To achieve the range of operating wavelengths needed for a given application, a combination of materials with different bandgaps (for example, superlattices or heterostructures)^6,7 or variations in the composition of semiconductor alloys during growth^8,9 are used. However, these materials are complex to fabricate, and the operating range is fixed after fabrication. Although wide-range, active and reversible tunability of the operating wavelengths in optoelectronic devices after fabrication is a highly desirable feature, no such platform has been yet developed. Here we demonstrate high-performance room-temperature infrared optoelectronics with actively variable spectra by presenting black phosphorus as an ideal candidate. Enabled by the highly strain-sensitive nature of its bandgap, which varies from 0.22 to 0.53 electronvolts, we show a continuous and reversible tuning of the operating wavelengths in light-emitting diodes and photodetectors composed of black phosphorus. Furthermore, we leverage this platform to demonstrate multiplexed nondispersive infrared gas sensing, whereby multiple gases (for example, carbon dioxide, methane and water vapour) are detected using a single light source. With its active spectral tunability while also retaining high performance, our work bridges a technological gap, presenting a potential way of meeting different requirements for emission and detection spectra in optoelectronic applications.

Ferroelectric-tuned van der Waals heterojunction with band alignment evolution

Van der Waals integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. In a specific van der Waals heterojunction, the band alignment engineering is crucial and feasible to realize high performance and multifunctionality. Here, we design a ferroelectric-tuned van der Waals heterojunction device structure by integrating a GeSe/MoS₂ VHJ and poly (vinylidene fluoride-trifluoroethylene)-based ferroelectric polymer. An ultrahigh electric field derived from the ferroelectric polarization can effectively modulate the band alignment of the GeSe/MoS₂ heterojunction. Band alignment transition of the heterojunction from type II to type I is demonstrated. The combination of anisotropic GeSe with MoS₂ realizes a high-performance polarization-sensitive photodetector exhibiting low dark current of approximately 1.5 pA, quick response of 14 μs, and high detectivity of 4.7 × 10¹² Jones. Dichroism ratios are also enhanced by ferroelectric polarization in a broad spectrum from visible to near-infrared. The ferroelectric-tuned GeSe/MoS₂ van der Waals heterojunction has great potential for multifunctional detection applications in sophisticated light information sensing. More profoundly, the ferroelectric-tuned van der Waals heterojunction structure provides a valid band-engineering approach to creating versatile devices.

Rashba valleys and quantum Hall states in few-layer black arsenic

Exciting phenomena may emerge in non-centrosymmetric two-dimensional electronic systems when spin-orbit coupling (SOC)¹ interplays dynamically with Coulomb interactions^2,3, band topology^4,5 and external modulating forces^6-8. Here we report synergetic effects between SOC and the Stark effect in centrosymmetric few-layer black arsenic, which manifest as particle-hole asymmetric Rashba valley formation and exotic quantum Hall states that are reversibly controlled by electrostatic gating. The unusual findings are rooted in the puckering square lattice of black arsenic, in which heavy 4p orbitals form a Brillouin zone-centred Γ valley with p_z symmetry, coexisting with doubly degenerate D valleys of p_x origin near the time-reversal-invariant momenta of the X points. When a perpendicular electric field breaks the structure inversion symmetry, strong Rashba SOC is activated for the p_x bands, which produces spin-valley-flavoured D^± valleys paired by time-reversal symmetry, whereas Rashba splitting of the Γ valley is constrained by the p_z symmetry. Intriguingly, the giant Stark effect shows the same p_x-orbital selectiveness, collectively shifting the valence band maximum of the D^± Rashba valleys to exceed the Γ Rashba top. Such an orchestrating effect allows us to realize gate-tunable Rashba valley manipulations for two-dimensional hole gases, hallmarked by unconventional even-to-odd transitions in quantum Hall states due to the formation of a flavour-dependent Landau level spectrum. For two-dimensional electron gases, the quantization of the Γ Rashba valley is characterized by peculiar density-dependent transitions in the band topology from trivial parabolic pockets to helical Dirac fermions.

Systematic competition between strain and electric field stimuli in tuning EELS of phosphorene

The strongly anisotropic properties of phosphorene makes it an attractive material for applications in deciding the specific direction for different purposes. Here we have particularly reported the competition between strain and electric field stimuli in evaluating the band gap and electron energy loss spectrum (EELS) of single-layer black phosphorus using the tight-binding method and the Kubo conductivity. We construct possible configurations for this competition and evaluate the interband optical excitations considering the corresponding band gap variations. The band gap increases with the individual electric field, while it increases (decreases) with tensile (compressive) uniaxial in-plane strain. Contrary to the in-plane strains, the uniaxial out-of-plane strain shows a critical strain at which the system suffers from a phase transition. Furthermore, the presence of these stimuli simultaneously results in an extraordinary band gap engineering. Based on the EELS response in the electromagnetic spectrum, the armchair (zigzag) direction is classified into the infrared and visible (ultraviolet) region. We report that the electric field gives rise to the blue shift in the interband optical transitions along the armchair direction, while the compressive/tensile (tensile/compressive) in-plane/out-of-plane strain provides a red (blue) shift. Moreover, we observe an inverse behavior of EELS response to the individual and combined effects of electric field and strains compared to the band gap behavior except at critical out-of-plane strain for which the physical theory of interband excitation is simply violated. Our results provide a new perspective on the applicability of phosphorene in stimulated optical applications.

Large-area synthesis of transition metal dichalcogenides via CVD and solution-based approaches and their device applications

For the last decade, two-dimensional transition metal dichalcogenides (TMDCs) have attracted considerable attention due to their unique physical and chemical properties. Novel devices based on these materials are commonly fabricated using the exfoliated samples, which lacks control of the thickness and cannot be scaled. Therefore, the synthesis of large-area TMDC thin films with a high uniformity to advance the field is required. This article reviews the latest advances in the synthesis of wafer-scale thin films using chemical vapor deposition methods. The key factors that determine the electrical performance of TMDCs are introduced, including the interfacial properties and defects. The latest solution-based techniques which suggest the opportunity to obtain large-area TMDC thin films with a low-cost process and the potential applications in electronics and optoelectronics are also discussed. The outlook for future research directions, challenges, and possible development of 2D materials are further discussed.

Gate tunable self-powered few-layer black phosphorus broadband photodetector

Utilizing the unique gate induced giant stark effect in few-layer black phosphorus (BP), we theoretically propose a broadband photodetector device based on pure few-layer BP using atomic first-principles calculations. By applying a vertical gate voltage in the few-layer BP, the intrinsic inversion symmetry of the system can be broken. We found that the photocurrent can be generated via the photogalvanic (or photovoltaic) effect (PGE) without the need for an external bias voltage, which means the gated few-layer BP photodetector is self-powered and the dark current can be greatly suppressed. Most importantly, due to the giant stark effect of the gated few-layer BP, the photodetection range can be well controlled and further enlarged from the mid-infrared range (MIR) to the far-infrared range (FIR). Furthermore, the few-layer BP based photodetector device also presents high polarization sensitivity with extinction ratios up to 104 and a large anisotropic photoresponse. Our numerical findings pave a feasible way for the few-layer BP's novel application in self-powered and well-controlled broadband photodetectors.

Langmuir-Blodgett fabrication of large-area black phosphorus-C60 thin films and heterojunction photodetectors

Black phosphorus (BP) has emerged as a promising two-dimensional (2D) semiconductor for applications in electronics, optoelectronics, and energy storage. As is the case for many 2D materials, the fabrication of large-area BP thin films remains a considerable challenge. Here, we report the assembly of BP nanosheets into compact thin films using the Langmuir-Blodgett (LB) technique. The overlapping stacking between BP nanosheets is suppressed when the nanosheets are surrounded by fullerene C₆₀ molecules due to physisorption. This allows for the fabrication of large-area BP films (20 mm × 18 mm) with a homogenous nanosheet distribution and negligible oxidation. The fabricated films show measurable absorption up to 2.3 μm. We use these films as active layers to demonstrate mm-sized BP heterojunction photodetectors with mA W^-1 scale responsivities from the visible to the near-infrared. Photodetector internal quantum efficiencies at 660 nm and 808 nm are 5% and 1%, respectively.

High oscillator strength interlayer excitons in two-dimensional heterostructures for mid-infrared photodetection

The development of infrared photodetectors is mainly limited by the choice of available materials and the intricate crystal growth process. Moreover, thermally activated carriers in traditional III-V and II-VI semiconductors enforce low operating temperatures in the infrared photodetectors. Here we demonstrate infrared photodetection enabled by interlayer excitons (ILEs) generated between tungsten and hafnium disulfide, WS₂/HfS₂. The photodetector operates at room temperature and shows an even higher performance at higher temperatures owing to the large exciton binding energy and phonon-assisted optical transition. The unique band alignment in the WS₂/HfS₂ heterostructure allows interlayer bandgap tuning from the mid- to long-wave infrared spectrum. We postulate that the sizeable charge delocalization and ILE accumulation at the interface result in a greatly enhanced oscillator strength of the ILEs and a high responsivity of the photodetector. The sensitivity of ILEs to the thickness of two-dimensional materials and the external field provides an excellent platform to realize robust tunable room temperature infrared photodetectors.

Analytical study on strain tunable electronic structure and optical transitions in armchair black phosphorene nanoribbons

We theoretically investigate the electronic structure and optical absorption spectrum of armchair-edged black phosphorene nanoribbons (APNRs) with and without uniaxial strain based on the tight-binding Hamiltonian and Kubo formula. We analytically obtain the energy spectrum and wavefunction, and reveal the band gap scaling law as 1/(N + 1)² for APNRs in the presence and absence of uniaxial strain, where N is the number of armchair dimer across the ribbon. We find the band gap of APNRs linearly increases (decreases) with increasing in-plane uniaxial tensile (compressive) strain ɛ _x/y , but shows contrary dependence on the out-of-plane uniaxial strain ɛ _z . The effective mass versus strain exhibits the same behavior to that of band gap but with nonlinear dependence. Under an incident light linearly-polarized along the ribbon, we demonstrate that the inter-band optical transitions obey the selection rule Δn = n - n' = 0, but the intra-band transitions are forbidden for both pristine and strained APNRs originating from the orthogonality between the transverse wavefunctions of the sublattices belonging to different subbands. Importantly, the transverse electric field or impurities can release the optical selection rules by breaking the wavefunction orthogonality, which results in that the optical transitions between any subbands are all possible. Our findings provide further understanding on the electronic and optical properties of APNRs, which may pave the way for designing optoelectronic devices based on phosphorene.

2D materials beyond graphene toward Si integrated infrared optoelectronic devices

Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.

Monolayer Hexagonal Boron Nitride Tunnel Barrier Contact for Low-Power Black Phosphorus Heterojunction Tunnel Field-Effect Transistors

Transistor downscaling by Moore's law has facilitated drastic improvements in information technology, but this trend cannot continue because power consumption issues have pushed Moore's law to its limit. Tunnel field-effect transistors (TFETs) have been suggested to address these issues; however, so far they have not achieved the essential criteria for fast, low-power switches, i.e., an average subthreshold swing over four decades of current (SS_{ave_4dec}) below 60 mV/dec and a current of 1-10 μA/μm where the SS is 60 mV/dec (I₆₀). Here, we report a black phosphorus (BP) heterojunction (HJ) TFET that exhibits a record high I₆₀ of 19.5 μA/μm and subthermionic SS_{ave_4dec} of 37.6 mV/dec at 300 K, using a key material factor, monolayer hexagonal boron nitride tunnel barrier for the drain contact. This work, demonstrating the influence of the tunnel barrier contact on device performance, paves the way for the development of ultrafast low-power logic circuits beyond CMOS capabilities.

How Clean Is Clean? Recipes for van der Waals Heterostructure Cleanliness Assessment

Van der Waals (vdW) heterostructures, artificial stacks of two-dimensional materials, present an exciting platform to explore new physical phenomena and unique applications. An important and increasingly recognized factor limiting the electrical and optical performance of heterostructure samples is the presence of interfacial contamination. In published work reporting various heterostructure fabrication methods, evidence for the cleanliness of samples is often presented as optical and atomic force microscopy images, typically exhibiting a completely flat topography. In this work, we demonstrate that such samples may nonetheless contain a uniformly thin layer of contaminants at the heterostructure interface. As alternatives, we propose two robust visualization methods that are highly sensitive to such residues, based on photoluminescence mapping and on selective solvent diffusion. The detection capability and straightforward implementation of these two imaging techniques make them powerful tools to assess and improve the cleanliness of a wide variety of fabrication techniques for heterostructures comprising any combination of vdW materials.

Widely tunable mid-infrared light emission in thin-film black phosphorus

Thin-film black phosphorus (BP) is an attractive material for mid-infrared optoelectronic applications because of its layered nature and a moderate bandgap of around 300 meV. Previous photoconduction demonstrations show that a vertical electric field can effectively reduce the bandgap of thin-film BP, expanding the device operational wavelength range in mid-infrared. Here, we report the widely tunable mid-infrared light emission from a hexagonal boron nitride (hBN)/BP/hBN heterostructure device. With a moderate displacement field up to 0.48 V/nm, the photoluminescence (PL) peak from a ~20-layer BP flake is continuously tuned from 3.7 to 7.7 μm, spanning 4 μm in mid-infrared. The PL emission remains perfectly linear-polarized along the armchair direction regardless of the bias field. Moreover, together with theoretical analysis, we show that the radiative decay probably dominates over other nonradiative decay channels in the PL experiments. Our results reveal the great potential of thin-film BP in future widely tunable, mid-infrared light-emitting and lasing applications.

Recent Advances in Chemical Functionalization of 2D Black Phosphorous Nanosheets

Owing to their tunable direct bandgap, high charge carrier mobility, and unique in-plane anisotropic structure, black phosphorus nanosheets (BPNSs) have emerged as one of the most important candidates among the 2D materials beyond graphene. However, the poor ambient stability of black phosphorus limits its practical application, due to the chemical degradation of phosphorus atoms to phosphorus oxides in the presence of oxygen and/or water. Chemical functionalization is demonstrated as an efficient approach to enhance the ambient stability of BPNSs. Herein, various covalent strategies including radical addition, nitrene addition, nucleophilic substitution, and metal coordination are summarized. In addition, efficient noncovalent functionalization methods such as van der Waals interactions, electrostatic interactions, and cation-π interactions are described in detail. Furthermore, the preparations, characterization, and diverse applications of functionalized BPNSs in various fields are recapped. The challenges faced and future directions for the chemical functionalization of BPNSs are also highlighted.

Black phosphorus-based van der Waals heterostructures for mid-infrared light-emission applications

Mid-infrared (MIR) light-emitting devices play a key role in optical communications, thermal imaging, and material analysis applications. Two-dimensional (2D) materials offer a promising direction for next-generation MIR devices owing to their exotic optical properties, as well as the ultimate thickness limit. More importantly, van der Waals heterostructures-combining the best of various 2D materials at an artificial atomic level-provide many new possibilities for constructing MIR light-emitting devices of large tuneability and high integration. Here, we introduce a simple but novel van der Waals heterostructure for MIR light-emission applications built from thin-film BP and transition metal dichalcogenides (TMDCs), in which BP acts as an MIR light-emission layer. For BP-WSe₂ heterostructures, an enhancement of ~200% in the photoluminescence intensities in the MIR region is observed, demonstrating highly efficient energy transfer in this heterostructure with type-I band alignment. For BP-MoS₂ heterostructures, a room temperature MIR light-emitting diode (LED) is enabled through the formation of a vertical PN heterojunction at the interface. Our work reveals that the BP-TMDC heterostructure with efficient light emission in the MIR range, either optically or electrically activated, provides a promising platform for infrared light property studies and applications.

HfO2-passivated black phosphorus field effect transistor with long-termed stability and enhanced current on/off ratio

Enhanced on/off ratio, obvious threshold voltage left shift, newly emerging bipolar field effect performance and most importantly, excellent stability in ambient condition have been reported for the HfO₂-passivated black phosphorus field effect transistors . Both Raman spectra and x-ray photoelectron spectroscopy (XPS) show a thickness reduction effect after HfO₂ passivation, XPS further demonstrates that the formation of P-Hf and P-O chemical bonds contributes to the thinning of layered black phosphorus (BP), in which P-Hf bonds also provide chemical protection for BP flakes from degradation. Atomic force microscopy measures the thickness of the passivation layer and also verifies the stability of the passivated BP flakes.

Gate-tunable large spin polarization in a few-layer black phosphorus-based spintronic device

We report a first principles study of the gate tunable spin transport properties in trilayer black phosphorus (BP) placed on a Ni(100) electrode. In the proposed spintronic device, the spin-dependent conductance and the corresponding spin polarization can be largely modulated by the gate voltage. Instead of resorting to the gate tunable spin orbital interaction (SOI) mechanism in the traditional spintronic devices, the control scheme here is achieved by the giant Stark effect induced semiconducting-metallic phase transition of the few-layer BP. It is found that the quantum tunneling effect is gradually reduced as the gate voltage increases. During this process, the conductances of spin up and spin down components increase differently and hence the spin polarization is largely varied from 7% to 77% in parallel configuration (PC) and from 1% to 54% in anti-parallel configuration (APC). More importantly, the maximum magnetoresistance (MR) value can reach as large as 80%. Finally, we find that the non-equilibrium spin-polarized current can also be controlled by the external bias voltage. For instance, a large turn on/off ratio can be realized by the gate voltage (4239 for spin down current and 1809 for spin up current) when the bias voltage is fixed at 0.01 V. Our theoretical findings pave a feasible way for the novel application of few-layer BP in spintronic nanodevices.

Near-Infrared Activated Black Phosphorus as a Nontoxic Photo-Oxidant for Alzheimer's Amyloid-β Peptide

The inhibition of amyloid-β (Aβ) aggregation by photo-oxygenation has become an effective way of treating Alzheimer's disease (AD). New near-infrared (NIR) activated treatment agents, which not only possess high photo-oxygenation efficiency, but also show low biotoxicity, are urgently needed. Herein, for the first time, it is demonstrated that NIR activated black phosphorus (BP) could serve as an effective nontoxic photo-oxidant for amyloid-β peptide in vitro and in vivo. The nanoplatform BP@BTA (BTA: one of thioflavin-T derivatives) possesses high affinity to the Aβ peptide due to specific amyloid selectivity of BTA. Importantly, under NIR light, BP@BTA can significantly generate a high quantum yield of singlet oxygen (¹ O₂ ) to oxygenate Aβ, thereby resulting in inhibiting the aggregation and attenuating Aβ-induced cytotoxicity. In addition, BP could finally degrade into nontoxic phosphate, which guarantees the biosafety. Using transgenic Caenorhabditis elegans CL2006 as AD model, the results demonstrate that the ¹ O₂ -generation system could dramatically promote life-span extension of CL2006 strain by decreasing the neurotoxicity of Aβ.

Bright Mid-Infrared Photoluminescence from Thin-Film Black Phosphorus

Recently rediscovered layered black phosphorus (BP) provides rich opportunities for investigations of device physics and applications. The band gap of BP is widely tunable by its layer number and a vertical electric field, covering a wide electromagnetic spectral range from visible to mid-infrared. Despite much progress in BP optoelectronics, the fundamental photoluminescence (PL) properties of thin-film BP in mid-infrared have rarely been investigated. Here, we report bright PL emission from thin-film BP (with thickness of 4.5 to 46 nm) from 80 to 300 K. The PL measurements indicate a band gap of 0.308 ± 0.003 eV in 46 nm thick BP at 80 K, and it increases monotonically to 0.334 ± 0.003 eV at 300 K. Such an anomalous blueshift agrees with the previous theoretical and photoconductivity spectroscopy results. However, the observed blueshift of 26 meV from 80 to 300 K is about 60% of the previously reported value. Most importantly, we show that the PL emission intensity from thin-film BP is only a few times weaker than that of an indium arsenide (InAs) multiple quantum well (MQW) structure grown by molecular beam epitaxy. Finally, we report the thickness-dependent PL spectra in thin-film BP in mid-infrared regime. Our work reveals the mid-infrared light emission properties of thin-film BP, suggesting its promising future in tunable mid-infrared light emitting and lasing applications.

Anisotropic Quantum Well Electro-Optics in Few-Layer Black Phosphorus

The incorporation of electrically tunable materials into photonic structures such as waveguides and metasurfaces enables dynamic, electrical control of light propagation at the nanoscale. Few-layer black phosphorus is a promising material for these applications due to its in-plane anisotropic, quantum well band structure, with a direct band gap that can be tuned from 0.3 to 2 eV with a number of layers and subbands that manifest as additional optical transitions across a wide range of energies. In this Letter, we report an experimental investigation of three different, anisotropic electro-optic mechanisms that allow electrical control of the complex refractive index in few-layer black phosphorus from the mid-infrared to the visible: Pauli-blocking of intersubband optical transitions (the Burstein-Moss effect); the quantum-confined Stark effect; and the modification of quantum well selection rules by a symmetry-breaking, applied electric field. These effects generate near-unity tuning of the BP oscillator strength for some material thicknesses and photon energies, along a single in-plane crystal axis, transforming absorption from highly anisotropic to nearly isotropic. Lastly, the anisotropy of these electro-optical phenomena results in dynamic control of linear dichroism and birefringence, a promising concept for active control of the complex polarization state of light, or propagation direction of surface waves.

Band Gap Renormalization, Carrier Multiplication, and Stark Broadening in Photoexcited Black Phosphorus

We investigate black phosphorus by time- and angle-resolved photoelectron spectroscopy. The electrons excited by 1.57 eV photons relax down to a conduction band minimum within 1 ps. Despite the low band gap value, no relevant amount of carrier multiplication could be detected at an excitation density 3-6 × 10¹⁹ cm^-3. In the thermalized state, the band gap renormalization is negligible up to a photoexcitation density that fills the conduction band by 150 meV. Astonishingly, a Stark broadening of the valence band takes place at an early delay time. We argue that electrons and holes with a high excess energy lead to inhomogeneous screening of near surface fields. As a consequence, the chemical potential is no longer pinned in a narrow impurity band.

Molecularly Controlled Stark Effect Induces Significant Rectification in Polycyclic-Aromatic-Hydrocarbon-Terminated n-Alkanethiolates

The variation of the electronic structure of individual molecules as a function of the applied bias matters for the performance of molecular and organic electronic devices. Understanding the structure-electric-field relationship, however, remains a challenge because of the lack of in-operando spectroscopic technique and complexity arising from the ill-defined on-surface structure of molecules and organic-electrode interfaces within devices. We report that a reliable and reproducible molecular diode can be achieved by control of the conjugation length in polycyclic-aromatic-hydrocarbon (PAH)-terminated n-alkanethiolate (denoted as SC₁₁PAH), incorporated into liquid-metal-based large-area tunnel junctions in the form of a self-assembled monolayer. By taking advantage of the structural simplicity and tunability of SC₁₁PAH and the high-yielding feature of the junction technique, we demonstrate that the increase in the conjugation length of the PAH terminal group leads to a significant rectification ratio up to ∼1.7 × 10² at ±740 mV. Further study suggests that the Stark shift of the molecular energy resonance of the PAH breaks the symmetry of the energy topography across the junction and induces rectification in a temperature-independent charge-transport regime.

Two-dimensional black phosphorus: its fabrication, functionalization and applications

Phosphorus, one of the most abundant elements in the Earth (∼0.1%), has attracted much attention in the last five years since the rediscovery of two-dimensional (2D) black phosphorus (BP) in 2014. The successful scaling down of BP endows this 'old material' with new vitality, resulting from the intriguing semiconducting properties in the atomic scale limit, i.e. layer-dependent bandgap that covers from the visible light to mid-infrared light spectrum as well as hole-dominated ambipolar transport characteristics. Intensive research effort has been devoted to the fabrication, characterization, functionalization and application of BP and other phosphorus allotropes. In this review article, we summarize the fundamental properties and fabrication techniques of BP, with particular emphasis on the recent progress in molecular beam epitaxy growth of 2D phosphorus. Subsequently, we highlight recent progress in BP (opto)electronic device applications achieved via customized manipulation methods, such as interface, defect and bandgap engineering as well as forming Lego-like stacked heterostructures.