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Zhang ZH, Yang LZ, Qin HJ, Liao WA, Liu H, Fu J, Zeng H, Zhang W, Fu YS. Direct Observations of Spontaneous In-Plane Electronic Polarization in 2D Te Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405590. [PMID: 39194389 DOI: 10.1002/adma.202405590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2024] [Revised: 08/15/2024] [Indexed: 08/29/2024]
Abstract
Single-element polarization in low dimensions is fascinating for constructing next-generation nanoelectronics with multiple functionalities, yet remains difficult to access with satisfactory performance. Here, spectroscopic evidences are presented for the spontaneous electronic polarization in tellurium (Te) films thinned down to bilayer, characterized by low-temperature scanning tunneling microscopy/spectroscopy. The unique chiral structure and centrosymmetry-breaking character in 2D Te gives rise to sizable in-plane polarization with accumulated charges, which is demonstrated by the reversed band-bending trends at opposite polarization edges in spatially resolved spectra and conductance mappings. The polarity of charges exhibits intriguing influence on imaging the moiré superlattice at the Te-graphene interface. Moreover, the plain spontaneous polarization robustly exists for various film thicknesses, and can universally preserve against different epitaxial substrates. The experimental validations of considerable electronic polarization in Te multilayers thus provide a realistic platform for promisingly facilitating reliable applications in microelectronic devices.
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Affiliation(s)
- Zhi-Hao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Lian-Zhi Yang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Hao-Jun Qin
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Wen-Ao Liao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Heng Liu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Jun Fu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Wenhao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ying-Shuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan, 430074, China
- Institute for Quantum Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
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2
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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3
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Park JY, Moon MS, Lee H, Kim D, Park H, Kim JW, Ko H, Ha T, Kim J, Bahk YM, Moon BH, Kim KK, Park SR, Choi S, Sebait R, Kim JH, Lee YH, Han GH. Continuous Template Growth of Large-Scale Tellurene Films on 1T'-MoTe 2. ACS NANO 2024; 18:18992-19002. [PMID: 38990779 DOI: 10.1021/acsnano.4c02662] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/13/2024]
Abstract
Use of a template triggers an epitaxial interaction with the depositing material during synthesis. Recent studies have demonstrated that two-dimensional tellurium (tellurene) can be directionally oriented when grown on transition metal dichalcogenide (TMD) templates. Specifically, employing a T-phase TMD, such as WTe2, restricts the growth direction even further due to its anisotropic nature, which allows for the synthesis of well-oriented tellurene films. Despite this, producing large-area epitaxial films still remains a significant challenge. Here, we report the continuous synthesis of a 1T'-MoTe2 template via chemical vapor deposition and tellurene via vapor transport. The interaction between helical Te and the 1T'-MoTe2 template facilitates the Te chains to collapse into ribbon shapes, enhancing lateral growth at a rate approximately 6 times higher than in the vertical direction, as confirmed by scanning electron microscopy and atomic force microscopy. Interestingly, despite the predominance of the lateral growth, cross-sectional transmission electron microscopy analysis of the tellurene ribbons revealed a consistent 60-degree incline at the edges. This suggests that the edges of the tellurene ribbons, where they contact the template surface, are favorable sites for additional Te absorption, which then stacks along the incline angle to expand. Furthermore, controlling the synthesis temperature, duration, and preheating time has facilitated the successful synthesis of tellurene films. The resultant tellurene exhibited hole mobility as high as ∼400 cm2/V s. After removing the underlying metallic template with plasma treatment, the film showed a current on/off ratio of ∼103. This ratio was confirmed by two-terminal field-effect transistor measurements and supported by near-field terahertz (THz) spectroscopy mapping.
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Affiliation(s)
- Jin Young Park
- Department of Physics, Incheon National University (INU), Incheon 22012, Korea
| | - Min Soo Moon
- Department of Physics, Incheon National University (INU), Incheon 22012, Korea
| | - Heewoo Lee
- Department of Physics, Incheon National University (INU), Incheon 22012, Korea
| | - Dongil Kim
- Department of Physics, Incheon National University (INU), Incheon 22012, Korea
| | - Hajung Park
- Department of Physics, Incheon National University (INU), Incheon 22012, Korea
| | - Jae Woo Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Korea
| | - Hayoung Ko
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Korea
| | - Taewoo Ha
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Korea
| | - Jeongwoo Kim
- Department of Physics, Incheon National University (INU), Incheon 22012, Korea
| | - Young-Mi Bahk
- Department of Physics, Incheon National University (INU), Incheon 22012, Korea
| | - Byoung Hee Moon
- Department of Physics, Incheon National University (INU), Incheon 22012, Korea
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Korea
- Sungkyunkwan University, Suwon 16419, Korea
| | - Seung Ryong Park
- Department of Physics, Incheon National University (INU), Incheon 22012, Korea
| | - Soobong Choi
- Department of Physics, Incheon National University (INU), Incheon 22012, Korea
| | - Riya Sebait
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Korea
- Sungkyunkwan University, Suwon 16419, Korea
| | - Jung Ho Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Korea
- Sungkyunkwan University, Suwon 16419, Korea
| | - Gang Hee Han
- Department of Physics, Incheon National University (INU), Incheon 22012, Korea
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4
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Liu J, Jiang Q, Huang B, Han X, Lu X, Ma N, Chen J, Mei H, Di Z, Liu Z, Li A, Ye M. Realization of Honeycomb Tellurene with Topological Edge States. NANO LETTERS 2024. [PMID: 39037306 DOI: 10.1021/acs.nanolett.4c02171] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/23/2024]
Abstract
The two-dimensional (2D) honeycomb lattice has attracted intensive research interest due to the appearance of Dirac-type band structures as the consequence of two sublattices in the honeycomb structure. Introducing strong spin-orbit coupling (SOC) leads to a gap opening at the Dirac point, transforming the honeycomb lattice into a 2D topological insulator as a platform for the quantum spin Hall effect (QSHE). In this work, we realize a 2D honeycomb-structured film with tellurium, the heaviest nonradioactive element in Group VI, namely, tellurene, via molecular beam epitaxy. We revealed the gap opening of 160 meV at the Dirac point due to the strong SOC in the honeycomb-structured tellurene by angle-resolved photoemission spectroscopy. The topological edge states of tellurene are detected via scanning tunneling microscopy/spectroscopy. These results demonstrate that tellurene is a novel 2D honeycomb lattice with strong SOC, and they unambiguously prove that tellurene is a promising candidate for a room-temperature QSHE system.
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Affiliation(s)
- Jianzhong Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Qi Jiang
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, People's Republic of China
- Center for Transformative Science, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Benrui Huang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiaowen Han
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiangle Lu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ni Ma
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jingyi Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Hongping Mei
- University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zengfeng Di
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhongkai Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Ang Li
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Mao Ye
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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5
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Li G, Bao H, Peng Y, Fu X, Liao W, Xiang C. Strain controllable band alignment and the interfacial and optical properties of tellurene/GaAs van der Waals heterostructures. Phys Chem Chem Phys 2024; 26:16327-16336. [PMID: 38805024 DOI: 10.1039/d4cp00560k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
By using first principles calculations, we theoretically investigate the electronic structures and the interfacial and optical properties of the two-dimensional tellurene (Te)-gallium arsenide (GaAs) van der Waals heterostructures (vdWHs), i.e., α-Te/GaAs and γ-Te/GaAs, formed using Te and GaAs monolayers. It has been demonstrated that, the semiconductor-semiconductor contacted α-Te/GaAs vdWH exhibits a type-II band alignment with a direct band gap of 0.28 eV while the metal-semiconductor contacted γ-Te/GaAs vdWH has a p-type Schottky contact with a Schottky barrier height (SBH) of 0.36 eV at the interface. The transition from type-II to type-III band alignment is observed firstly in the α-Te/GaAs vdWH when the in-plane biaxial strain is less than -5.2% and larger than 4.4%, meanwhile, the p-type Schottky contact to Ohmic contact transition may be realized in the γ-Te/GaAs vdWH when the in-plane biaxial strain is less than -2.4%. Finally, the maximum optical absorption coefficients of the α- and γ-Te/GaAs vdWHs have been found to be up to 31% and 29%, respectively, and may be modulated effectively by applying in-plane biaxial strain. The obtained results may be of importance in the design of nanoelectronic devices based on the proposed tellurene/GaAs vdWHs.
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Affiliation(s)
- Gen Li
- College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, China.
| | - Hairui Bao
- College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, China.
| | - Yange Peng
- College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, China.
| | - Xi Fu
- College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, China.
- College of Science, Hunan University of Science and Engineering, Yongzhou 425199, China
| | - Wenhu Liao
- College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, China.
- School of Communication and Electronic Engineering, Jishou University, Jishou 416000, China
- Key Laboratory of Mineral Cleaner Production and Exploit of Green Functional Materials in Hunan Province, Jishou University, Jishou 416000, China
| | - Changqing Xiang
- College of Physics and Electromechanical Engineering, Jishou University, Jishou 416000, China.
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6
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Xu Y, Qi J, Ma C, He Q. Wet-Chemical Synthesis of Elemental 2D Materials. Chem Asian J 2024; 19:e202301152. [PMID: 38469659 DOI: 10.1002/asia.202301152] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 03/06/2024] [Accepted: 03/07/2024] [Indexed: 03/13/2024]
Abstract
Wet-chemical synthesis refers to the bottom-up chemical synthesis in solution, which is among the most popular synthetic approaches towards functional two-dimensional (2D) materials. It offers several advantages, including cost-effectiveness, high yields,, precious control over the production process. As an emerging family of 2D materials, elemental 2D materials (Xenes) have shown great potential in various applications such as electronics, catalysts, biochemistry,, sensing technologies due to their exceptional/exotic properties such as large surface area, tunable band gap,, high carrier mobility. In this review, we provide a comprehensive overview of the current state-of-the-art in wet-chemical synthesis of Xenes including tellurene, bismuthene, antimonene, phosphorene,, arsenene. The current solvent compositions, process parameters utilized in wet-chemical synthesis, their effects on the thickness, stability of the resulting Xenes are also presented. Key factors considered involves ligands, precursors, surfactants, reaction time, temperature. Finally, we highlight recent advances, existing challenges in the current application of wet-chemical synthesis for Xenes production, provide perspectives on future improvement.
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Affiliation(s)
- Yue Xu
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Junlei Qi
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Cong Ma
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Qiyuan He
- Department of Materials Science, Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China
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7
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Qi J, Dai Y, Ma C, Ke C, Wang W, Wu Z, Wang X, Bao K, Xu Y, Huang H, Wang L, Wu J, Luo G, Chen Y, Lin Z, He Q. Surfactant-Free Ultrasonication-Assisted Synthesis of 2d Tellurium Based on Metastable 1T'-MoTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306962. [PMID: 37652747 DOI: 10.1002/adma.202306962] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 08/21/2023] [Indexed: 09/02/2023]
Abstract
Elemental 2D materials (E2DMs) have been attracting considerable attention owing to their chemical simplicity and excellent/exotic properties. However, the lack of robust chemical synthetic methods seriously limits their potential. Here, a surfactant-free liquid-phase synthesis of high-quality 2D tellurium is reported based on ultrasonication-assisted exfoliation of metastable 1T'-MoTe2. The as-grown 2D tellurium nanosheets exhibit excellent single crystallinity, ideal 2D morphology, surfactant-free surface, and negligible 1D by-products. Furthermore, a unique growth mechanism based on the atomic escape of Te atoms from metastable transition metal dichalcogenides and guided 2D growth in the liquid phase is proposed and verified. 2D tellurium-based field-effect transistors show ultrahigh hole mobility exceeding 1000 cm2 V-1 s-1 at room temperature attributing to the high crystallinity and surfactant-free surface, and exceptional chemical and operational stability using both solid-state dielectric and liquid-state electrical double layer. The facile ultrasonication-assisted synthesis of high-quality 2D tellurium paves the way for further exploration of E2DMs and expands the scope of liquid-phase exfoliation (LPE) methodology toward the controlled wet-chemical synthesis of functional nanomaterials.
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Affiliation(s)
- Junlei Qi
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, 100084, China
| | - Chen Ma
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, NT, Hong Kong, 999077, China
| | - Chengxuan Ke
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Wenbin Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Zongxiao Wu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Xiang Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Kai Bao
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Yue Xu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Lingzhi Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Jingkun Wu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Guangfu Luo
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, NT, Hong Kong, 999077, China
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
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8
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Zhou J, Zhang G, Wang W, Chen Q, Zhao W, Liu H, Zhao B, Ni Z, Lu J. Phase-engineered synthesis of atomically thin te single crystals with high on-state currents. Nat Commun 2024; 15:1435. [PMID: 38365915 PMCID: PMC10873424 DOI: 10.1038/s41467-024-45940-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Accepted: 02/08/2024] [Indexed: 02/18/2024] Open
Abstract
Multiple structural phases of tellurium (Te) have opened up various opportunities for the development of two-dimensional (2D) electronics and optoelectronics. However, the phase-engineered synthesis of 2D Te at the atomic level remains a substantial challenge. Herein, we design an atomic cluster density and interface-guided multiple control strategy for phase- and thickness-controlled synthesis of α-Te nanosheets and β-Te nanoribbons (from monolayer to tens of μm) on WS2 substrates. As the thickness decreases, the α-Te nanosheets exhibit a transition from metallic to n-type semiconducting properties. On the other hand, the β-Te nanoribbons remain p-type semiconductors with an ON-state current density (ION) up to ~ 1527 μA μm-1 and a mobility as high as ~ 690.7 cm2 V-1 s-1 at room temperature. Both Te phases exhibit good air stability after several months. Furthermore, short-channel (down to 46 nm) β-Te nanoribbon transistors exhibit remarkable electrical properties (ION = ~ 1270 μA μm-1 and ON-state resistance down to 0.63 kΩ μm) at Vds = 1 V.
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Affiliation(s)
- Jun Zhou
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Guitao Zhang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Wenhui Wang
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Qian Chen
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Weiwei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China
| | - Hongwei Liu
- Jiangsu Key Lab on Opto-Electronic Technology, School of Physics and Technology, Nanjing Normal University, 1 Wenyuan Road, Nanjing, 210023, China
| | - Bei Zhao
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China.
| | - Zhenhua Ni
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China.
- School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China.
| | - Junpeng Lu
- School of Physics and Key Laboratory of Quantum Materials and Devices of Ministry of Education, Southeast University, Nanjing, 211189, China.
- School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China.
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9
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Zhang W, Ma Z, Wang J, Shao B, Zuo X. Tunability of electronic properties in the 2D MoS 2/α-tellurene/WS 2 heterotrilayer via biaxial strain and electric field. Phys Chem Chem Phys 2024; 26:6362-6371. [PMID: 38315005 DOI: 10.1039/d3cp06002k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Alpha-tellurene (α-Te), a two-dimensional (2D) material that has been theoretically predicted and experimentally verified, has garnered significant attention due to its unique properties. In this study, we investigated the 2D trilayer MoS2/α-Te/WS2 van der Waals heterostructure with different stacking orders using first-principles calculations. Our results indicate that this heterotrilayer exhibits an intrinsic type-I band alignment and an indirect band gap similar to that of monolayer α-Te. Notably, the band edges of the heterostructure can be modulated by biaxial strain and an external electric field, enabling these edges to arise from different monolayers. This controlled manipulation facilitates the effective separation of photogenerated electron-hole pairs and prolongs the carrier lifetime. Moreover, the heterostructure can undergo a transition from an indirect to a direct band gap under biaxial compressive strain or a moderate negative electric field, and semiconductor-to-metal transition can also be achieved by intensifying the biaxial strain and external electric field. Overall, our research provides valuable theoretical insights into the potential applications of α-Te-based heterostructures, rendering them promising candidates for the next generation of nanodevices.
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Affiliation(s)
- Wenli Zhang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
| | - Zhuang Ma
- School of Physics and Telecommunication Engineering, Zhoukou Normal University, Zhoukou 466001, China
| | - Jing Wang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
| | - Bin Shao
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
- Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network Technology, Nankai University, Tianjin 300350, China
| | - Xu Zuo
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300350, China.
- Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Tianjin 300350, China
- Engineering Research Center of Thin Film Optoelectronics Technology, Ministry of Education, Tianjin 300350, China
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10
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Huang X, Xiong R, Hao C, Li W, Sa B, Wiebe J, Wiesendanger R. Experimental Realization of Monolayer α-Tellurene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309023. [PMID: 38010233 DOI: 10.1002/adma.202309023] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2023] [Revised: 11/23/2023] [Indexed: 11/29/2023]
Abstract
2D materials emerge as a versatile platform for developing next-generation devices. The experimental realization of novel artificial 2D atomic crystals, which does not have bulk counterparts in nature, is still challenging and always requires new physical or chemical processes. Monolayer α-tellurene is predicted to be a stable 2D allotrope of tellurium (Te), which has great potential for applications in high-performance field-effect transistors. However, the synthesis of monolayer α-tellurene remains elusive because of its complex lattice configuration, in which the Te atoms are stacked in tri-layers in an octahedral fashion. Here, a self-assemble approach, using three atom-long Te chains derived from the dynamic non-equilibrium growth of an a-Si:Te alloy as building blocks, is reported for the epitaxial growth of monolayer α-tellurene on a Sb2 Te3 substrate. By combining scanning tunneling microscopy/spectroscopy with density functional theory calculations, the surface morphology and electronic structure of monolayer α-tellurene are revealed and the underlying growth mechanism is determined. The successful synthesis of monolayer α-tellurene opens up the possibility for the application of this new single-element 2D material in advanced electronic devices.
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Affiliation(s)
- Xiaochun Huang
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
| | - Rui Xiong
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Chunxue Hao
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
- Institute of Nanostructures and Solid State Physics, Centre for Hybrid Nanostructures (CHyN), University of Hamburg, 22761, Hamburg, Germany
| | - Wenbin Li
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
| | - Baisheng Sa
- Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Jens Wiebe
- Department of Physics, University of Hamburg, D-20355, Hamburg, Germany
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11
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Jiang Q, Yang H, Xue W, Yang R, Shen J, Zhang X, Li RW, Xu X. Controlled Growth of Submillimeter-Scale Cr 5Te 8 Nanosheets and the Domain Wall Nucleation Governed Magnetization Reversal Process. NANO LETTERS 2024; 24:1246-1253. [PMID: 38198620 DOI: 10.1021/acs.nanolett.3c04200] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Two-dimensional (2D) ferromagnets have attracted widespread attention for promising applications in compact spintronic devices. However, the controlled synthesis of high-quality, large-sized, and ultrathin 2D magnets via facile, economical method remains challenging. Herein, we develop a hydrogen-tailored chemical vapor deposition approach to fabricating 2D Cr5Te8 ferromagnetic nanosheets. Interestingly, the time period of introducing hydrogen was found to be crucial for controlling the lateral size, and a Cr5Te8 single-crystalline nanosheet of lateral size up to ∼360 μm with single-unit-cell thickness has been obtained. These samples exhibit a leading role of domain wall nucleation in governing the magnetization reversal process, providing important references for optimizing the performances of associated devices. The nanosheets also show notable magnetotransport response, including nonmonotonous magnetic-field-dependent magnetoresistance and sizable anomalous Hall resistivity, demonstrating Cr5Te8 as a promising material for constructing high-performance magnetoelectronic devices. This study presents a breakthrough of large-sized CVD-grown 2D magnetic materials, which is indispensable for constructing 2D spintronic devices.
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Affiliation(s)
- Qitao Jiang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
| | - Huali Yang
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Wuhong Xue
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
| | - Ruilong Yang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
| | - Jianlei Shen
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
| | - Xueying Zhang
- Zhongfa Aviation Institute, Beihang University, Hangzhou 311115, China
| | - Run-Wei Li
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Xiaohong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China
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12
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Gao W, Dou W, Zhou D, Song B, Niu T, Hua C, Wee ATS, Zhou M. Epitaxial Growth of 2D Binary Phosphides. SMALL METHODS 2024:e2301512. [PMID: 38175841 DOI: 10.1002/smtd.202301512] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Indexed: 01/06/2024]
Abstract
Combinations of phosphorus with main group III, IV, and V elements are theoretically predicted to generate 2D binary phosphides with extraordinary properties and promising applications. However, experimental synthesis is significantly lacking. Here, a general approach for preparing 2D binary phosphides is reported using single crystalline surfaces containing the constituent element of target 2D materials as the substrate. To validate this, SnP3 and BiP, representing typical 2D binary phosphides, are successfully synthesized on Cu2 Sn and bismuthene, respectively. Scanning tunneling microscopy imaging reveals a hexagonal pattern of SnP3 on Cu2 Sn, while α-BiP can be epitaxially grown on the α-bismuthene domain on Cu2 Sb. First-principles calculations reveal that the formation of SnP3 on Cu2 Sn is associated with strong interface bonding and significant charge transfer, while α-BiP interacts weakly with α-bismuthene so that its semiconducting property is preserved. The study demonstrates an attractive avenue for the atomic-scale growth of binary 2D materials via substrate phase engineering.
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Affiliation(s)
- Wenjin Gao
- Collaborative Center for Physics and Chemistry, Institute of International Innovation, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Wenzhen Dou
- Collaborative Center for Physics and Chemistry, Institute of International Innovation, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Dechun Zhou
- Collaborative Center for Physics and Chemistry, Institute of International Innovation, Beihang University, Hangzhou, 311115, China
- Department of Physics, National University of Singapore, Singapore, 117551, Singapore
| | - Biyu Song
- Collaborative Center for Physics and Chemistry, Institute of International Innovation, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Collaborative Center for Physics and Chemistry, Institute of International Innovation, Beihang University, Hangzhou, 311115, China
| | - Chenqiang Hua
- Collaborative Center for Physics and Chemistry, Institute of International Innovation, Beihang University, Hangzhou, 311115, China
| | - Andrew Thye Shen Wee
- Department of Physics, National University of Singapore, Singapore, 117551, Singapore
| | - Miao Zhou
- Collaborative Center for Physics and Chemistry, Institute of International Innovation, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
- Tianmushan Laboratory, Hangzhou, 310023, China
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13
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Sari B, Zeltmann SE, Zhao C, Pelz PM, Javey A, Minor AM, Ophus C, Scott MC. Analysis of Strain and Defects in Tellurium-WSe 2 Moiré Heterostructures Using Scanning Nanodiffraction. ACS NANO 2023; 17:22326-22333. [PMID: 37956410 PMCID: PMC10690779 DOI: 10.1021/acsnano.3c04283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2023] [Revised: 11/02/2023] [Accepted: 11/03/2023] [Indexed: 11/15/2023]
Abstract
In recent years, there has been an increasing focus on 2D nongraphene materials that range from insulators to semiconductors to metals. As a single-elemental van der Waals semiconductor, tellurium (Te) has captivating anisotropic physical properties. Recent work demonstrated growth of ultrathin Te on WSe2 with the atomic chains of Te aligned with the armchair directions of the substrate using physical vapor deposition (PVD). In this system, a moiré superlattice is formed where micrometer-scale Te flakes sit on top of the continuous WSe2 film. Here, we determined the precise orientation of the Te flakes with respect to the substrate and detailed structure of the resulting moiré lattice by combining electron microscopy with image simulations. We directly visualized the moiré lattice using center of mass-differential phase contrast (CoM-DPC). We also investigated the local strain within the Te/WSe2 layered materials using scanning nanodiffraction techniques. There is a significant tensile strain at the edges of flakes along the direction perpendicular to the Te chain direction, which is an indication of the preferred orientation for the growth of Te on WSe2. In addition, we observed local strain relaxation regions within the Te film, specifically attributed to misfit dislocations, which we characterize as having a screw-like nature. The detailed structural analysis gives insight into the growth mechanisms and strain relaxation in this moiré heterostructure.
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Affiliation(s)
- Bengisu Sari
- Department
of Materials Science and Engineering, University
of California Berkeley, Berkeley, California 94720, United States
- The
National Center for Electron Microscopy, Molecular Foundry, Berkeley, California 94720, United States
- Materials
Science Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720-8099, United States
| | - Steven E. Zeltmann
- Department
of Materials Science and Engineering, University
of California Berkeley, Berkeley, California 94720, United States
| | - Chunsong Zhao
- Department
of Materials Science and Engineering, University
of California Berkeley, Berkeley, California 94720, United States
- Materials
Science Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720-8099, United States
- Department
of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, California 94720, United States
| | - Philipp M. Pelz
- Institute
of Micro- and Nanostructure Research, Center for Nanoanalysis and
Electron Microscopy, Interdisciplinary Center for Nanostructured Films, Friedrich-Alexander-Universitat Erlangen-Nurnberg, Erlangen 91058, Germany
| | - Ali Javey
- Materials
Science Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720-8099, United States
- Department
of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, California 94720, United States
| | - Andrew M. Minor
- Department
of Materials Science and Engineering, University
of California Berkeley, Berkeley, California 94720, United States
- The
National Center for Electron Microscopy, Molecular Foundry, Berkeley, California 94720, United States
| | - Colin Ophus
- The
National Center for Electron Microscopy, Molecular Foundry, Berkeley, California 94720, United States
| | - Mary C. Scott
- Department
of Materials Science and Engineering, University
of California Berkeley, Berkeley, California 94720, United States
- The
National Center for Electron Microscopy, Molecular Foundry, Berkeley, California 94720, United States
- Materials
Science Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720-8099, United States
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14
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Feng X, Zhai B, Cheng R, Yin L, Wen Y, Jiang J, Wang H, Li Z, Zhu Y, He J. Phase Engineering of 2D Spinel-Type Manganese Oxides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304118. [PMID: 37437137 DOI: 10.1002/adma.202304118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2023] [Revised: 07/10/2023] [Accepted: 07/10/2023] [Indexed: 07/14/2023]
Abstract
2D magnetic materials have been of interest due to their unique long-range magnetic ordering in the low-dimensional regime and potential applications in spintronics. Currently, most studies are focused on strippable van der Waals magnetic materials with layered structures, which typically suffer from a poor stability and scarce species. Spinel oxides have a good environmental stability and rich magnetic properties. However, the isotropic bonding and close-packed nonlayered crystal structure make their 2D growth challenging, let alone the phase engineering. Herein, a phase-controllable synthesis of 2D single-crystalline spinel-type oxides is reported. Using the van der Waals epitaxy strategy, the thicknesses of the obtained tetragonal and hexagonal manganese oxide (Mn3 O4 ) nanosheets can be tuned down to 7.1 nm and one unit cell (0.7 nm), respectively. The magnetic properties of these two phases are evaluated using vibrating-sample magnetometry and first-principle calculations. Both structures exhibit a Curie temperature of 48 K. Owing to its ultrathin geometry, the Mn3 O4 nanosheet exhibits a superior ultraviolet detection performance with an ultralow noise power density of 0.126 pA Hz-1/2 . This study broadens the range of 2D magnetic semiconductors and highlights their potential applications in future information devices.
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Affiliation(s)
- Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Zhongwei Li
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yushan Zhu
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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15
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Wei J, Yu H, He Q, Wu D, Xie Y, Lin C. Broadband SnS/Te photodetector to long-wavelength infrared: breaking the spectrum limit through alloy engineering. OPTICS EXPRESS 2023; 31:32591-32600. [PMID: 37859059 DOI: 10.1364/oe.495083] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Accepted: 09/05/2023] [Indexed: 10/21/2023]
Abstract
Materials based on group IV chalcogenides, are considered to be one of the most promising materials for high-performance, broadband photodetectors due to their wide bandgap coverage, intriguing chemical bonding and excellent physical properties. However, the reported photodetectors based on SnS are still worked at relatively narrow near-infrared band (as far as 1550 nm) hampered by the nonnegligible bandgap of 1.1-1.5 eV. Here, a novel photodetector based on Te alloyed SnS thin film was demonstrated with an ultra-broadband response up to 10.6 µm. By controlling the Te alloyed concentration in SnS increasing to 37.64%, the bandgap narrows to 0.23 eV, exhibiting a photoresponse potential at long-wavelength infrared excitation. Our results show Te-alloying can remarkably enhance the detection properties of SnS/Te photodetectors. The photoresponsivity and detectivity of 1.59 mA/W and 2.3 × 108 Jones were realized at 10.6 µm at room temperature. Moreover, the nonzero photogain was observed generated by nonlinearly increased photocurrent density, resulting in a superlinear dependency between photoresponsivity and light intensity. Our studies successfully broaden photoresponse spectrum of SnS toward the mid-infrared range for the first time. It also suggests that alloying is an effective technique for tuning the band edges of group IV chalcogenides, contributing deep implications for developing future optoelectronic applications.
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16
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Kim C, Hur N, Yang J, Oh S, Yeo J, Jeong HY, Shong B, Suh J. Atomic Layer Deposition Route to Scalable, Electronic-Grade van der Waals Te Thin Films. ACS NANO 2023; 17:15776-15786. [PMID: 37432767 DOI: 10.1021/acsnano.3c03559] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/13/2023]
Abstract
Scalable production and integration techniques for van der Waals (vdW) layered materials are vital for their implementation in next-generation nanoelectronics. Among available approaches, perhaps the most well-received is atomic layer deposition (ALD) due to its self-limiting layer-by-layer growth mode. However, ALD-grown vdW materials generally require high processing temperatures and/or additional postdeposition annealing steps for crystallization. Also, the collection of ALD-producible vdW materials is rather limited by the lack of a material-specific tailored process design. Here, we report the annealing-free wafer-scale growth of monoelemental vdW tellurium (Te) thin films using a rationally designed ALD process at temperatures as low as 50 °C. They exhibit exceptional homogeneity/crystallinity, precise layer controllability, and 100% step coverage, all of which are enabled by introducing a dual-function co-reactant and adopting a so-called repeating dosing technique. Electronically, vdW-coupled and mixed-dimensional vertical p-n heterojunctions with MoS2 and n-Si, respectively, are demonstrated with well-defined current rectification as well as spatial uniformity. Additionally, we showcase an ALD-Te-based threshold switching selector with fast switching time (∼40 ns), selectivity (∼104), and low Vth (∼1.3 V). This synthetic strategy allows the low-thermal-budget production of vdW semiconducting materials in a scalable fashion, thereby providing a promising approach for monolithic integration into arbitrary 3D device architectures.
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Affiliation(s)
- Changhwan Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Namwook Hur
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Jiho Yang
- Department of Chemical Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Saeyoung Oh
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Jeongin Yeo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Bonggeun Shong
- Department of Chemical Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Joonki Suh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
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17
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Tian H, Wang J, Lai G, Dou Y, Gao J, Duan Z, Feng X, Wu Q, He X, Yao L, Zeng L, Liu Y, Yang X, Zhao J, Zhuang S, Shi J, Qu G, Yu XF, Chu PK, Jiang G. Renaissance of elemental phosphorus materials: properties, synthesis, and applications in sustainable energy and environment. Chem Soc Rev 2023; 52:5388-5484. [PMID: 37455613 DOI: 10.1039/d2cs01018f] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
The polymorphism of phosphorus-based materials has garnered much research interest, and the variable chemical bonding structures give rise to a variety of micro and nanostructures. Among the different types of materials containing phosphorus, elemental phosphorus materials (EPMs) constitute the foundation for the synthesis of related compounds. EPMs are experiencing a renaissance in the post-graphene era, thanks to recent advancements in the scaling-down of black phosphorus, amorphous red phosphorus, violet phosphorus, and fibrous phosphorus and consequently, diverse classes of low-dimensional sheets, ribbons, and dots of EPMs with intriguing properties have been produced. The nanostructured EPMs featuring tunable bandgaps, moderate carrier mobility, and excellent optical absorption have shown great potential in energy conversion, energy storage, and environmental remediation. It is thus important to have a good understanding of the differences and interrelationships among diverse EPMs, their intrinsic physical and chemical properties, the synthesis of specific structures, and the selection of suitable nanostructures of EPMs for particular applications. In this comprehensive review, we aim to provide an in-depth analysis and discussion of the fundamental physicochemical properties, synthesis, and applications of EPMs in the areas of energy conversion, energy storage, and environmental remediation. Our evaluations are based on recent literature on well-established phosphorus allotropes and theoretical predictions of new EPMs. The objective of this review is to enhance our comprehension of the characteristics of EPMs, keep abreast of recent advances, and provide guidance for future research of EPMs in the fields of chemistry and materials science.
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Affiliation(s)
- Haijiang Tian
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- Key Laboratory of Environment Remediation and Ecological Health, Ministry of Education, College of Environmental and Resource Sciences, Zhejiang University, Hangzhou 310058, P. R. China
| | - Jiahong Wang
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Gengchang Lai
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Yanpeng Dou
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
| | - Jie Gao
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
| | - Zunbin Duan
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
| | - Xiaoxiao Feng
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
| | - Qi Wu
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
| | - Xingchen He
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
| | - Linlin Yao
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
| | - Li Zeng
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
| | - Yanna Liu
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
| | - Xiaoxi Yang
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
| | - Jing Zhao
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
| | - Shulin Zhuang
- Key Laboratory of Environment Remediation and Ecological Health, Ministry of Education, College of Environmental and Resource Sciences, Zhejiang University, Hangzhou 310058, P. R. China
| | - Jianbo Shi
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Guangbo Qu
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Xue-Feng Yu
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China.
- Hubei Three Gorges Laboratory, Yichang, Hubei 443007, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Paul K Chu
- Department of Physics, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
- Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
| | - Guibin Jiang
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing 100085, P. R. China.
- Key Laboratory of Environment Remediation and Ecological Health, Ministry of Education, College of Environmental and Resource Sciences, Zhejiang University, Hangzhou 310058, P. R. China
- School of Environment, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
- University of Chinese Academy of Sciences, Beijing 100049, P. R. China
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18
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Lin S, Lin T, Wang W, Liu C, Ding Y. High Performance GaN-Based Ultraviolet Photodetector via Te/Metal Electrodes. MATERIALS (BASEL, SWITZERLAND) 2023; 16:4569. [PMID: 37444883 DOI: 10.3390/ma16134569] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2023] [Revised: 06/01/2023] [Accepted: 06/01/2023] [Indexed: 07/15/2023]
Abstract
Photodetectors (PDs) based on two-dimensional (2D) materials have promising applications in modern electronics and optoelectronics. However, due to the intralayer recombination of the photogenerated carriers and the inevitable surface trapping stages of the constituent layers, the PDs based on 2D materials usually suffer from low responsivity and poor response speed. In this work, a distinguished GaN-based photodetector is constructed on a sapphire substrate with Te/metal electrodes. Due to the metal-like properties of tellurium, the band bending at the interface between Te and GaN generates an inherent electric field, which greatly reduces the carrier transport barrier and promotes the photoresponse of GaN. This Te-enhanced GaN-based PD show a promising responsivity of 4951 mA/W, detectivity of 1.79 × 1014 Jones, and an external quantum efficiency of 169%. In addition, owing to the collection efficiency of carriers by this Te-GaN interface, the response time is greatly decreased compared with pure GaN PDs. This high performance can be attributed to the fact that Te reduces the contact resistance of the metal electrode Au/Ti to GaN, forming an ohmic-like contact and promoting the photoresponse of GaN. This work greatly extends the application potential of GaN in the field of high-performance photodetectors and puts forward a new way of developing high performance photodetectors.
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Affiliation(s)
- Sheng Lin
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
| | - Tingjun Lin
- Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Wenliang Wang
- Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 510640, China
| | - Chao Liu
- State Key Laboratory of Crystal Materials, School of Microelectronics, Institute of Novel Semiconductors, Shandong Technology Center of Nanodevices and Integration, Shandong University, Jinan 250100, China
| | - Yao Ding
- School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China
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19
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Torun G, Kishi T, Pugliese D, Milanese D, Bellouard Y. Formation Mechanism of Elemental Te Produced in Tellurite Glass Systems by Femtosecond Laser Irradiation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210446. [PMID: 36749876 DOI: 10.1002/adma.202210446] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2022] [Revised: 12/23/2022] [Indexed: 05/19/2023]
Abstract
The formation of elemental trigonal tellurium (t-Te) on tellurite glass surfaces exposed to femtosecond laser pulses is discussed. Specifically, the underlying elemental crystallization phenomenon is investigated by altering laser parameters in common tellurite glass compositions under various ambient conditions. Elemental crystallization of t-Te by a single femtosecond laser pulse is unveiled by high-resolution imaging and analysis. The thermal diffusion model reveals the absence of lattice melting upon a single laser pulse, highlighting the complexity of the phase transformation. The typical cross-section displays three different crystal configurations over its depth, in which the overall thickness increases with each subsequent pulse. The effect of various controlled atmospheres shows the suppressing nature of the elemental crystallization, whereas the substrate temperature shows no significant impact on the nucleation of t-Te nanocrystals. This research gives new insight into the elemental crystallization of glass upon femtosecond laser irradiation and shows the potential to fabricate functional transparent electronic micro/nanodevices.
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Affiliation(s)
- Gözden Torun
- Galatea Laboratory, STI/IEM, Ecole Polytechnique Fédérale de Lausanne (EPFL), 2002, Neuchâtel, Switzerland
| | - Tetsuo Kishi
- Department of Materials Science and Engineering, Tokyo Institute of Technology, Tokyo, 152-8552, Japan
| | - Diego Pugliese
- Department of Electronics and Telecommunications, Polytechnic University of Turin, 10129, Turin, Italy
- Department of Applied Science and Technology and INSTM RU, Polytechnic University of Turin, 10129, Turin, Italy
| | - Daniel Milanese
- Department of Engineering and Architecture and INSTM RU, University of Parma, 43124, Parma, Italy
| | - Yves Bellouard
- Galatea Laboratory, STI/IEM, Ecole Polytechnique Fédérale de Lausanne (EPFL), 2002, Neuchâtel, Switzerland
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20
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Quan W, Hong C, Pan S, Hu J, Wu Q, Zhang Z, Zhou F, Zheng F, Zhu Z, Zhang Y. Rectangular-Phase Tellurene on Ni(111) from Monolayer Films to Periodic Striped Patterns. ACS APPLIED MATERIALS & INTERFACES 2023; 15:16144-16152. [PMID: 36929818 DOI: 10.1021/acsami.2c20400] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
As an emerging member of monoelemental two-dimensional (2D) materials, 2D tellurium (tellurene) has recently attracted intensive attention due to its polymorphism arising from the multivalent nature and fascinating properties such as wide-range band gaps, high carrier mobilities, etc. Herein, we predict the formation of a rectangular-phase tellurene on Ni(111) by first-principles density functional theory (DFT) calculations and realize its direct syntheses and characterizations by molecular beam epitaxy (MBE) and scanning tunneling microscopy (STM). We reveal that the monolayer rectangular tellurene and underlying Ni(111) substrate are strongly coupled, along with good lattice registry along two mutually perpendicular directions, which serves as the key driving force for the tellurene formation. We also uncover the unique morphological transitions of Te/Ni(111) from rectangular tellurene monolayer, to uniform periodic striped patterns at the second layer, and then to thick striped patterns. This work should offer valuable insights for the substrate-mediated syntheses of monoelemental 2D materials, thus propelling their phase engineering and intriguing property explorations.
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Affiliation(s)
- Wenzhi Quan
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Can Hong
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou 510632, People's Republic of China
| | - Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Qilong Wu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Zehui Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Fan Zhou
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Feipeng Zheng
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou 510632, People's Republic of China
| | - Zhili Zhu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
| | - Yanfeng Zhang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
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21
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Lu H, Liu W, Wang H, Liu X, Zhang Y, Yang D, Pi X. Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide. NANOTECHNOLOGY 2023; 34:132001. [PMID: 36563353 DOI: 10.1088/1361-6528/acae28] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 12/23/2022] [Indexed: 06/17/2023]
Abstract
Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to other substrates. Scanning tunneling microscopy and spectroscopy (STM/STS) with high spatial resolution and high-energy resolution are often used to study the morphologies and electronic structures of 2D layered materials. In this review, recent progress in the preparation of various 2D layered materials that are either monoelemental or transition metal dichalcogenides on EG/SiC surface by MBE and their STM/STS investigations are introduced.
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Affiliation(s)
- Hui Lu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Wenji Liu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
| | - Haolin Wang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
| | - Xiao Liu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Yiqiang Zhang
- School of Materials Science and Engineering & College of Chemistry, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Deren Yang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
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22
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Chen F, Cao D, Li J, Yan Y, Wu D, Zhang C, Gao L, Guo Z, Ma S, Yu H, Lin P. Solution-processed thickness engineering of tellurene for field-effect transistors and polarized infrared photodetectors. Front Chem 2022; 10:1046010. [PMID: 36311419 PMCID: PMC9606353 DOI: 10.3389/fchem.2022.1046010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2022] [Accepted: 10/04/2022] [Indexed: 11/16/2022] Open
Abstract
Research on elemental 2D materials has been experiencing a renaissance in the past few years. Of particular interest is tellurium (Te), which possesses many exceptional properties for nanoelectronics, photonics, and beyond. Nevertheless, the lack of a scalable approach for the thickness engineering and the local properties modulation remains a major obstacle to unleashing its full device potential. Herein, a solution-processed oxidative etching strategy for post-growth thickness engineering is proposed by leveraging the moderate chemical reactivity of Te. Large-area ultrathin nanosheets with well-preserved morphologies could be readily obtained with appropriate oxidizing agents, such as HNO2, H2O2, and KMnO4. Compared with the conventional physical thinning approaches, this method exhibits critical merits of high efficiency, easy scalability, and the capability of site-specific thickness patterning. The thickness reduction leads to substantially improved gate tunability of field-effect transistors with an enhanced current switching ratio of ∼103, promoting the applications of Te in future logic electronics. The response spectrum of Te phototransistors covers the full range of short-wave infrared wavelength (1-3 μm), and the room-temperature responsivity and detectivity reach 0.96 AW-1 and 2.2 × 109 Jones at the telecom wavelength of 1.55 μm, together with a favorable photocurrent anisotropic ratio of ∼2.9. Our study offers a new approach to tackling the thickness engineering issue for solution-grown Te, which could help realize the full device potential of this emerging p-type 2D material.
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Affiliation(s)
- Fangfang Chen
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Dingwen Cao
- School of Physics, Henan Normal University, XinXiang, China
| | - Juanjuan Li
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Yong Yan
- School of Physics, Henan Normal University, XinXiang, China
| | - Di Wu
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Cheng Zhang
- School of Materials Science and Engineering, National Joint Engineering Research Center for Abrasion Control and Molding of Metal Materials, Henan University of Science and Technology, Luoyang, China
| | - Lenan Gao
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Zhaowei Guo
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Shihong Ma
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, China
| | - Pei Lin
- School of Physics and Microelectronics, Key Laboratory of Materials Physics of Ministry of Education, Zhengzhou University, Zhengzhou, China
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23
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Guo Z, Gu H, Fang M, Ye L, Liu S. Giant in-plane optical and electronic anisotropy of tellurene: a quantitative exploration. NANOSCALE 2022; 14:12238-12246. [PMID: 35929846 DOI: 10.1039/d2nr03226k] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Tellurene's giant in-plane optical anisotropy brings richer physics and an extra degree of freedom to regulate its optical properties for designing novel and unique polarization-sensitive devices. Here, we quantitatively evaluate the in-plane optical anisotropy of tellurene and further reveal its physical origins by combining imaging Mueller matrix spectroscopic ellipsometry (MMSE) and first-principles calculations. The anisotropic complex refractive indices and dielectric functions, as well as the derived giant birefringence (|Δn|max = 0.48) and dichroism (Δk > 0.4), are accurately determined by imaging MMSE to quantitatively evaluate the in-plane optical anisotropy of tellurene. With density functional theory (DFT), tellurene's optical anisotropy is connected to its low-symmetry lattice structure with electrical anisotropy (including the anisotropic effective mass, partial charge density, and carrier mobility), leading to anisotropic electric polarization and ultimately optical anisotropy. This work provides a general and quantitative way to explore the optical anisotropy and also helps to comprehend the connection between the lattice structure and the optical anisotropy of tellurene and even other emerging low-symmetry materials, which will further promote their polarization-sensitive optical applications.
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Affiliation(s)
- Zhengfeng Guo
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
- Innovation Institute, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Honggang Gu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
- Optics Valley Laboratory, Wuhan 430074, China
| | - Mingsheng Fang
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Lei Ye
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
- Optics Valley Laboratory, Wuhan 430074, China
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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24
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Zhang X, Yu H, Tang W, Wei X, Gao L, Hong M, Liao Q, Kang Z, Zhang Z, Zhang Y. All-van-der-Waals Barrier-Free Contacts for High-Mobility Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109521. [PMID: 35165952 DOI: 10.1002/adma.202109521] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Revised: 02/07/2022] [Indexed: 06/14/2023]
Abstract
Ultrathin 2D semiconductor devices are considered to have beyond-silicon potential but are severely troubled by the high Schottky barriers of the metal-semiconductor contacts, especially for p-type semiconductors. Due to the severe Fermi-level pinning effect and the lack of conventional semimetals with high work functions, their Schottky hole barriers are hardly removed. Here, an all-van-der-Waals barrier-free hole contact between p-type tellurene semiconductor and layered 1T'-WS2 semimetal is reported, which achieves a zero Schottky barrier height of 3 ± 9 meV and a high field-effect mobility of ≈1304 cm2 V-1 s-1 . The formation of such contacts can be attributed to the higher work function of ≈4.95 eV of the 1T'-WS2 semimetal, which is in sharp contrast with low work function (4.1-4.7 eV) of conventional semimetals. The study defines an available strategy for eliminating the Schottky barrier of metal-semiconductor contacts, facilitating 2D-semiconductor-based electronics and optoelectronics to extend Moore's law.
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Affiliation(s)
- Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Wenhui Tang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Xiaofu Wei
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Li Gao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Mengyu Hong
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Qingliang Liao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhuo Kang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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25
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Isceri S, Dragoni D, Campi D, Cecchi S, Bernasconi M. Geometry of tellurene adsorbed on the Si(111)- R30°-Sb surface from first principles calculations. Phys Chem Chem Phys 2022; 24:18608-18614. [PMID: 35894698 DOI: 10.1039/d2cp01759h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The 2D form of tellurium, named tellurene, is one of the latest discoveries in the family of 2D mono-elemental materials. In a trilayer configuration, free-standing tellurene was predicted theoretically to acquire two crystallographic forms, the α and β phases, corresponding to either a 1T-MoS2-like geometry or a trilayer slab exposing the Te(101̄0) surface of bulk Te with helical chains lying in-plane and further reconstructed due to the formation of interchain bonds. Either one or the other of the two phases was observed experimentally to prevail depending on the substrate they were grown onto. In the perspective to integrate tellurene on silicon, we here report an ab initio study of the adsorption of tellurene on the Si(111)-R30° surface passivated by antinomy. According to the literature, this substrate is chosen for the growth of several tellurides by molecular beam epitaxy. The calculations reveal that on this substrate the adsorption energy mostly compensates the energy difference between the α and β phases in the free-standing configuration which suggests that the prevalence of one phase over the other might in this case strongly depend on the kinetics effects and deposition conditions.
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Affiliation(s)
- Stefania Isceri
- Department of Physics, Politecnico di Milano, Piazza L. da Vinci 32, 20133, Milano, Italy.,Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5-7, 10117, Berlin, Germany
| | - Daniele Dragoni
- Department of Materials Science, University of Milano-Bicocca, Via R. Cozzi 55, 20125, Milano, Italy.
| | - Davide Campi
- Department of Materials Science, University of Milano-Bicocca, Via R. Cozzi 55, 20125, Milano, Italy.
| | - Stefano Cecchi
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e. V., Hausvogteiplatz 5-7, 10117, Berlin, Germany.,Department of Materials Science, University of Milano-Bicocca, Via R. Cozzi 55, 20125, Milano, Italy.
| | - Marco Bernasconi
- Department of Materials Science, University of Milano-Bicocca, Via R. Cozzi 55, 20125, Milano, Italy.
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26
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Grillo S, Pulci O, Marri I. Evolution of the Electronic and Optical Properties of Meta-Stable Allotropic Forms of 2D Tellurium for Increasing Number of Layers. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2503. [PMID: 35889726 PMCID: PMC9324411 DOI: 10.3390/nano12142503] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/24/2022] [Revised: 07/15/2022] [Accepted: 07/17/2022] [Indexed: 02/05/2023]
Abstract
In this work, ab initio Density Functional Theory calculations are performed to investigate the evolution of the electronic and optical properties of 2D Tellurium-called Tellurene-for three different allotropic forms (α-, β- and γ-phase), as a function of the number of layers. We estimate the exciton binding energies and radii of the studied systems, using a 2D analytical model. Our results point out that these quantities are strongly dependent on the allotropic form, as well as on the number of layers. Remarkably, we show that the adopted method is suitable for reliably predicting, also in the case of Tellurene, the exciton binding energy, without the need of computationally demanding calculations, possibly suggesting interesting insights into the features of the system. Finally, we inspect the nature of the mechanisms ruling the interaction of neighbouring Tellurium atoms helical chains (characteristic of the bulk and α-phase crystal structures). We show that the interaction between helical chains is strong and cannot be explained by solely considering the van der Waals interaction.
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Affiliation(s)
- Simone Grillo
- Department of Physics, University of Rome Tor Vergata and INFN, Via della Ricerca Scientifica 1, 00133 Roma, Italy
| | - Olivia Pulci
- Department of Physics, University of Rome Tor Vergata and INFN, Via della Ricerca Scientifica 1, 00133 Roma, Italy
| | - Ivan Marri
- Department of Sciences and Methods for Engineering, University of Modena e Reggio Emilia, 42122 Reggio Emilia, Italy
- Interdepartmental Center for Research and Services in the Field of Hydrogen Production, Storage and Use H2—MO.RE, Via Università 4, 41121 Modena, Italy
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27
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Lozovoy KA, Izhnin II, Kokhanenko AP, Dirko VV, Vinarskiy VP, Voitsekhovskii AV, Fitsych OI, Akimenko NY. Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2221. [PMID: 35808055 PMCID: PMC9268513 DOI: 10.3390/nano12132221] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2022] [Revised: 06/23/2022] [Accepted: 06/24/2022] [Indexed: 02/01/2023]
Abstract
Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, electrical, magnetic, and optical properties, they promise to revolutionize electronics. The unique properties of graphene-like 2D materials give them the potential to create completely new types of devices for functional electronics, nanophotonics, and quantum technologies. This paper considers epitaxially grown two-dimensional allotropic modifications of single elements: graphene (C) and its analogs (transgraphenes) borophene (B), aluminene (Al), gallenene (Ga), indiene (In), thallene (Tl), silicene (Si), germanene (Ge), stanene (Sn), plumbene (Pb), phosphorene (P), arsenene (As), antimonene (Sb), bismuthene (Bi), selenene (Se), and tellurene (Te). The emphasis is put on their structural parameters and technological modes in the method of molecular beam epitaxy, which ensure the production of high-quality defect-free single-element two-dimensional structures of a large area for promising device applications.
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Affiliation(s)
- Kirill A. Lozovoy
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Ihor I. Izhnin
- Scientific Research Company “Electron-Carat”, Stryjska St. 202, 79031 Lviv, Ukraine;
| | - Andrey P. Kokhanenko
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Vladimir V. Dirko
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Vladimir P. Vinarskiy
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Alexander V. Voitsekhovskii
- Faculty of Radiophysics, National Research Tomsk State University, Lenin Av. 36, 634050 Tomsk, Russia; (A.P.K.); (V.V.D.); (V.P.V.); (A.V.V.)
| | - Olena I. Fitsych
- P. Sagaidachny National Army Academy, Gvardijska St. 32, 79012 Lviv, Ukraine;
| | - Nataliya Yu. Akimenko
- Department of Engineering Systems and Technosphere Safety, Pacific National University, Tihookeanskaya St. 136, 680035 Khabarovsk, Russia;
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28
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Tian Y, Chen Y, Liu Y, Li H, Dai Z. Elemental Two-Dimensional Materials for Li/Na-Ion Battery Anode Applications. CHEM REC 2022; 22:e202200123. [PMID: 35758546 DOI: 10.1002/tcr.202200123] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2022] [Revised: 06/09/2022] [Indexed: 11/11/2022]
Abstract
Two-dimensional (2D) nanostructure is currently the subject in the fields of new energy storage and devices. During the past years, a broad range of 2D materials represented by graphene have been developed and endow with excellent electrochemical properties. Among them, elemental 2D materials (Xenes) are an emerged material family for Li/Na-ion battery (LIB/SIB) anodes. Compared with other 2D materials and bulk materials, Xenes may exhibit some great superiorities for Li/Na storage, including excellent conductivity, fast ion diffusion and large active sites exposure. In this review, we provide a systematic summary of the recent progress and achievements of Xenes as well as their applications in LIBs/SIBs. The broad categorization of Xenes from group IIIA to VIA has been concisely outlined, and the related details in syntheses, structures and Li/Na-ion storage properties are reviewed. Further, the latest research progress of Xenes in Li/Na ion batteries are summarized, together with mechanism discussions. Finally, the challenges and prospects of Xenes applied to Li/Na ion battery are proposed based on its current developments.
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Affiliation(s)
- Yahui Tian
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Ya Chen
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Yaoda Liu
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Hui Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, P. R. China
| | - Zhengfei Dai
- Yunnan Provincial Key Laboratory of Energy Saving in Phosphorus Chemical Engineering and New Phosphorus Materials, The Higher Educational Key Laboratory for Phosphorus Chemical Engineering of Yunnan Province, Kunming University of Science and Technology, Kunming, 650500, China
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29
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Thankamani PR, Thomas S. Tellurium based materials for nonlinear optical applications. PHYSICAL SCIENCES REVIEWS 2022. [DOI: 10.1515/psr-2021-0117] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
Abstract
Abstract
Materials having broadband nonlinear optical responses find applications in photonics and optoelectronics devices. Novel materials with improved nonlinear optical properties are necessary for realizing effective all-optical switches, modulators etc. Tellurium (Te) and novel low-dimensional derivatives of Te offer intriguing nonlinear optical responses, making them promising candidates for design of various photonic devices.
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Affiliation(s)
- Priya Rose Thankamani
- International School of Photonics , Cochin University of Science and Technology , Cochin 682022 , Kerala , India
- Inter University Center for Nanomaterials and Devices (IUCND) , Cochin University of Science and Technology , Cochin 682022 , Kerala , India
| | - Sheenu Thomas
- International School of Photonics , Cochin University of Science and Technology , Cochin 682022 , Kerala , India
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30
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Li Q, Fang S, Liu S, Xu L, Xu L, Yang C, Yang J, Shi B, Ma J, Yang J, Quhe R, Lu J. Performance Limit of Ultrathin GaAs Transistors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:23597-23609. [PMID: 35575689 DOI: 10.1021/acsami.2c01134] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
High-electron-mobility group III-V compounds have been regarded as a promising successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide (GaAs) is an outstanding member of the III-V family due to its advantage of both good n- and p-type device performance. Monolayer (ML) GaAs is the limit form of ultrathin GaAs. Here, a hydrogenated ML GaAs (GaAsH2) FET is simulated by ab initio quantum-transport methods. The n- and p-type ML GaAsH2 metal-oxide-semiconductor FETs (MOSFETs) can well satisfy the on-state current, delay time, power dissipation, and energy-delay product requirements of the International Technology Roadmap for Semiconductors until the gate length is scaled down to 3/4 and 3/5 nm for the high-performance/low-power applications, respectively. Therefore, ultrathin GaAs is a prominent channel candidate for devices in the post-Moore era. The p-type ML GaAsH2 MOSFETs with a 2% uniaxially compressive strain and the unstrained n-type counterparts have symmetrical performance for the high-performance application, making ultrathin GaAs applicable for complementary MOS integrated circuits.
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Affiliation(s)
- Qiuhui Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Shibo Fang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Shiqi Liu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Lin Xu
- Department of Chemistry, The University of Hong Kong, Pokfulam 999077, P. R. China
| | - Linqiang Xu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Chen Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Jie Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Bowen Shi
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Jiachen Ma
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, P. R. China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, P. R. China
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China
| | - Jing Lu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing 100871, P. R. China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226000, P. R. China
- Key Laboratory for the Physics and Chemistry of Nanodevices, Peking University, Beijing 100871, P. R. China
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31
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Bhui A, Roychowdhury S, Sen A, Waghmare UV, Biswas K. Free‐Standing Few‐Layer Tellurene Nanosheets: Simple Solution‐Phase Synthesis and Electronic Structure. Z Anorg Allg Chem 2022. [DOI: 10.1002/zaac.202200097] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Animesh Bhui
- JNCASR: Jawaharlal Nehru Centre for Advanced Scientific Research INDIA
| | | | - Arpita Sen
- JNCASR: Jawaharlal Nehru Centre for Advanced Scientific Research INDIA
| | - Umesh V Waghmare
- JNCASR: Jawaharlal Nehru Centre for Advanced Scientific Research INDIA
| | - Kanishka Biswas
- Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) New Chemistry Unit INDIA
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32
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Dai C, Liu Y, Wei D. Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization. Chem Rev 2022; 122:10319-10392. [PMID: 35412802 DOI: 10.1021/acs.chemrev.1c00924] [Citation(s) in RCA: 57] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.
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Affiliation(s)
- Changhao Dai
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
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33
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Zhao C, Cai X, Liu X, Wang J, Chen W, Zhang L, Zhang Y, Zhu Z, Liu C, Niu C, Jia Y. Formation of stable polonium monolayers with tunable semiconducting properties driven by strong quantum size effects. Phys Chem Chem Phys 2022; 24:7512-7520. [PMID: 35289820 DOI: 10.1039/d2cp00070a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Elemental two-dimensional (2D) materials have attracted extraordinary interest compared with other 2D materials over the past few years. Fifteen elements from group IIIA to VIA have been discussed experimentally or theoretically for the formation of 2D monolayers, and the remaining few elements still need to be identified. Here, using first-principles calculations within density functional theory (DFT) and ab initio molecular dynamics simulations (AIMDs), we demonstrated that polonium can form stable 2D monolayers (MLs) with a 1T-MoS2-like structure. The band structure calculations revealed that polonium monolayers possess strong semiconducting properties with a band gap of ∼0.9 eV, and such semiconducting properties can well sustain up to a thickness of 4 MLs with a bandgap of ∼0.1 eV. We also found that polonium monolayers can be achieved through a spontaneous phase transition of ultrathin films with magic thicknesses, resulting in a weaker van der Waals interaction of ∼32 meV Å-2 between each three atomic layers. Also, the underlying physics comes from layered Peierls-like distortion driven by strong quantum size effects. Based on these intriguing findings, a suitable substrate on which the polonium monolayer can be grown through an epitaxial growth technique is proposed for further experiments. Our work not only extends completely the puzzle of elemental 2D monolayer materials from group IIIA to VIA, but also presents a new formation mechanism of 2D materials beyond the database of bulk materials with layered van der Waals interactions.
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Affiliation(s)
- Chunxiang Zhao
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China. .,Key Laboratory for Special Functional Materials of Ministry of Education, and School of Material Science and Engineering, Henan University, Kaifeng 475004, China
| | - Xiaolin Cai
- School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, China
| | - Xilai Liu
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China.
| | - Junfei Wang
- College of Science, Henan University of Technology, Zhengzhou 450001, Henan, China
| | - Weiguang Chen
- School of Physics and Electrical Engineering, Zhengzhou Normal University, Zhengzhou 450001, China
| | - Liying Zhang
- Key Laboratory for Special Functional Materials of Ministry of Education, and School of Material Science and Engineering, Henan University, Kaifeng 475004, China
| | - Yinuo Zhang
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China. .,Key Laboratory for Special Functional Materials of Ministry of Education, and School of Material Science and Engineering, Henan University, Kaifeng 475004, China
| | - Zhili Zhu
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China.
| | - Chengyan Liu
- Key Laboratory for Special Functional Materials of Ministry of Education, and School of Material Science and Engineering, Henan University, Kaifeng 475004, China
| | - Chunyao Niu
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China.
| | - Yu Jia
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China. .,Key Laboratory for Special Functional Materials of Ministry of Education, and School of Material Science and Engineering, Henan University, Kaifeng 475004, China.,Key Laboratory for Quantum Materials Science, and Center for Topological Functional Materials, Henan University, Kaifeng 475004, China
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34
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Singh J, Jakhar M, Kumar A. Stability, optoelectronic and thermal properties of two-dimensional Janus α-Te 2S. NANOTECHNOLOGY 2022; 33:215405. [PMID: 35158350 DOI: 10.1088/1361-6528/ac54e1] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2022] [Accepted: 02/14/2022] [Indexed: 06/14/2023]
Abstract
Motivated by recent progress in the two-dimensional (2D) materials of group VI elements and their experimental fabrication, we have investigated the stability, optoelectronic and thermal properties of Janusα-Te2S monolayer using first-principles calculations. The phonon dispersion and MD simulations confirm its dynamical and thermal stability. The moderate band gap (∼1.5 eV), ultrahigh carrier mobility (∼103cm2V-1s-1), small exciton binding energy (0.26 eV), broad optical absorption range and charge carrier separation ability due to potential difference (ΔV = 1.07 eV) on two surfaces of Janusα-Te2S monolayer makes it a promising candidate for solar energy conversion. We propose various type-II heterostructures consisting of Janusα-Te2S and other transition metal dichalcogenides for solar cell applications. The calculated power conversion efficiencies of the proposed heterostructures, i.e.α-Te2S/T-PdS2,α-Te2S/BP andα-Te2S/H-MoS2are ∼21%, ∼19% and 18%, respectively. Also, the ultralow value of lattice thermal conductivity (1.16 W m-1K-1) of Janusα-Te2S makes it a promising material for the fabrication of next-generation thermal energy conversion devices.
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Affiliation(s)
- Jaspreet Singh
- Department of Physics, Central University of Punjab, VPO Ghudda, Bathinda, 151401, India
| | - Mukesh Jakhar
- Department of Physics, Central University of Punjab, VPO Ghudda, Bathinda, 151401, India
| | - Ashok Kumar
- Department of Physics, Central University of Punjab, VPO Ghudda, Bathinda, 151401, India
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35
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Zhao X, Shi J, Yin Q, Dong Z, Zhang Y, Kang L, Yu Q, Chen C, Li J, Liu X, Zhang K. Controllable synthesis of high-quality two-dimensional tellurium by a facile chemical vapor transport strategy. iScience 2022; 25:103594. [PMID: 35005543 PMCID: PMC8718972 DOI: 10.1016/j.isci.2021.103594] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Revised: 11/10/2021] [Accepted: 12/03/2021] [Indexed: 11/25/2022] Open
Abstract
Recently, as an elementary material, tellurium (Te) has received widespread attention for its high carrier mobility, intriguing topological properties, and excellent environmental stability. However, it is difficult to obtain two-dimensional (2D) Te with high crystalline quality owing to its intrinsic helical chain structure. Herein, a facile strategy for controllable synthesis of high-quality 2D Te nanoflakes through chemical vapor transport in one step is reported. With carefully tuning the growth kinetics determined mainly by temperature, tellurium nanoflakes in lateral size of up to ∼40 μm with high crystallinity can be achieved. We also investigated the second harmonic generation of Te nanoflakes, which demonstrates that it can be used as frequency doubling crystals and has potential applications in nonlinear optical devices. In addition, field effect transistor devices based on the 2D Te nanoflakes were fabricated and exhibited excellent electrical properties with high mobility of 379 cm2 V−1 s−1. High-quality 2D Te nanoflakes were directly synthesized by CVT method The growth mechanisms of 2D Te nanoflakes were systematically studied 2D Te nanoflakes have potential applications in nonlinear optical devices 2D Te nanoflakes-based FETs exhibit high mobility of ∼379 cm2 V−1 s−1
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Affiliation(s)
- Xinxin Zhao
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Jianwei Shi
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Qin Yin
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Zhuo Dong
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Yan Zhang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Lixing Kang
- Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Qiang Yu
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Cheng Chen
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
- Corresponding author
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
- Corresponding author
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices and Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
- Corresponding author
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36
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Wan Y, Fu JH, Chuu CP, Tung V, Shi Y, Li LJ. Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth. Chem Soc Rev 2022; 51:803-811. [PMID: 35014665 DOI: 10.1039/d1cs00264c] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional (2D) layered materials hold tremendous promise for post-Si nanoelectronics due to their unique optical and electrical properties. Significant advances have been achieved in device fabrication and synthesis routes for 2D nanoelectronics over the past decade; however, one major bottleneck preventing their immediate applications has been the lack of a reproducible approach for growing wafer-scale single-crystal films despite tremendous progress in recent experimental demonstrations. In this tutorial review, we provide a systematic summary of the critical factors-including crystal/substrate symmetry and energy consideration-necessary for synthesizing single-orientation 2D layers. In particular, we focus on the discussions of the atomic edge-guided epitaxial growth, which assists in unidirectional nucleation for the wafer-scale growth of single-crystal 2D layers.
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Affiliation(s)
- Yi Wan
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China. .,Department of Mechanical Engineering, University of Hong Kong, Pokfulam Road, Hong Kong.
| | - Jui-Han Fu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia
| | - Chih-Piao Chuu
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), 168 Park Ave. 2, Hsinchu Science Park, Hsinchu 30075, Taiwan
| | - Vincent Tung
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia
| | - Yumeng Shi
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China. .,Engineering Technology Research Center for 2D Material Information Function Devices and Systems of Guangdong Province, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Lain-Jong Li
- Department of Mechanical Engineering, University of Hong Kong, Pokfulam Road, Hong Kong.
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37
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Liu G, Guo A, Cao F, Ju W, Wang Z, Wang H, Li GL, Gao Z. Ultrahigh thermoelectric performance of Janus α-STe 2 and α-SeTe 2 monolayers. Phys Chem Chem Phys 2022; 24:28295-28305. [DOI: 10.1039/d2cp03659b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Janus α-STe2 and α-SeTe2 monolayers are investigated systematically using first-principles calculations combined with semiclassical Boltzmann transport theory.
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Affiliation(s)
- Gang Liu
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Aiqing Guo
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Fengli Cao
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Weiwei Ju
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Zhaowu Wang
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Hui Wang
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Guo-Ling Li
- Chemistry and Chemical Engineering Guangdong Laboratory, Shantou 515063, People's Republic of China
| | - Zhibin Gao
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, People's Republic of China
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38
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Chen C, Chen X, Wu C, Wang X, Ping Y, Wei X, Zhou X, Lu J, Zhu L, Zhou J, Zhai T, Han J, Xu H. Air-Stable 2D Cr 5 Te 8 Nanosheets with Thickness-Tunable Ferromagnetism. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107512. [PMID: 34655444 DOI: 10.1002/adma.202107512] [Citation(s) in RCA: 40] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2021] [Indexed: 06/13/2023]
Abstract
2D magnetic materials have aroused widespread research interest owing to their promising application in spintronic devices. However, exploring new kinds of 2D magnetic materials with better stability and realizing their batch synthesis remain challenging. Herein, the synthesis of air-stable 2D Cr5 Te8 ultrathin crystals with tunable thickness via tube-in-tube chemical vapor deposition (CVD) growth technology is reported. The importance of tube-in-tube CVD growth, which can significantly suppress the equilibrium shift to the decomposition direction and facilitate that to the synthesis reaction direction, for the synthesis of high-quality Cr5 Te8 with accurate composition, is highlighted. By precisely adjusting the growth temperature, the thickness of Cr5 Te8 nanosheets is tuned from ≈1.2 nm to tens of nanometers, with the morphology changing from triangles to hexagons. Furthermore, magneto-optical Kerr effect measurements reveal that the Cr5 Te8 nanosheet is ferromagnetic with strong out-of-plane spin polarization. The Curie temperature exhibits a monotonic increase from 100 to 160 K as the Cr5 Te8 thickness increases from 10 to 30 nm and no apparent variation in surface roughness or magnetic properties after months of exposure to air. This study provides a robust method for the controllable synthesis of high-quality 2D ferromagnetic materials, which will facilitate research progress in spintronics.
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Affiliation(s)
- Chao Chen
- Key Laboratory of Applied Surface and Colloid Chemistry (Ministry of Education), Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Xiaodie Chen
- Wuhan National High Magnetic Field Centre, Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Changwei Wu
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, P. R. China
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, Shenzhen, Guangdong, 518055, P. R. China
| | - Yue Ping
- Key Laboratory of Applied Surface and Colloid Chemistry (Ministry of Education), Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Xin Wei
- Key Laboratory of Applied Surface and Colloid Chemistry (Ministry of Education), Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Xing Zhou
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Jiangbo Lu
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Lujun Zhu
- School of Physics and Information Technology, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Jiadong Zhou
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing, 100081, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Junbo Han
- Wuhan National High Magnetic Field Centre, Department of Physics, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry (Ministry of Education), Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
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39
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Shen J, Jia S, Shi N, Ge Q, Gotoh T, Lv S, Liu Q, Dronskowski R, Elliott SR, Song Z, Zhu M. Elemental electrical switch enabling phase segregation-free operation. Science 2021; 374:1390-1394. [PMID: 34882462 DOI: 10.1126/science.abi6332] [Citation(s) in RCA: 38] [Impact Index Per Article: 12.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
[Figure: see text].
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Affiliation(s)
- Jiabin Shen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China.,University of the Chinese Academy of Sciences, Beijing 100029, China
| | - Shujing Jia
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China.,University of the Chinese Academy of Sciences, Beijing 100029, China
| | - Nannan Shi
- Thermo Fisher Scientific China, Shanghai 200050, China
| | - Qingqin Ge
- Thermo Fisher Scientific China, Shanghai 200050, China
| | - Tamihiro Gotoh
- Department of Physics, Graduate School of Science and Technology, Gunma University, Maebashi 3718510, Japan
| | - Shilong Lv
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China
| | - Qi Liu
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Richard Dronskowski
- Institute of Inorganic Chemistry, Chair of Solid-State and Quantum Chemistry, RWTH Aachen University, Aachen 52056, Germany
| | - Stephen R Elliott
- Trinity College, University of Cambridge, Cambridge CB2 1TQ, UK.,Physical and Theoretical Chemistry Laboratory, University of Oxford, Oxford OX1 3QZ, UK
| | - Zhitang Song
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China
| | - Min Zhu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 200050 Shanghai, China
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40
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Sattigeri RM, Jha PK. Functionalized tellurene; a candidate large-gap 2D topological insulator. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:08LT01. [PMID: 34787102 DOI: 10.1088/1361-648x/ac3a47] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2021] [Accepted: 11/16/2021] [Indexed: 06/13/2023]
Abstract
The discovery of group IV and V elemental xene's with topologically non-trivial characters in their honeycomb lattice structure (HLS) has led to extensive efforts in realising analogous behaviour in group VI elemental monolayers. Theoretically; it was concluded that, group VI elemental monolayers cannot exist in HLS. However, some recent experimental evidence suggests that group VI elemental monolayers can be realised in HLS. In this letter, we report HLS of group VI elemental monolayer (such as, tellurene) can be realised to be dynamically stable when functionzalised with oxygen. The functionalization leads to, peculiar orbital filtering effects and broken spatial inversion symmetry which gives rise to the non-trivial topological character. The exotic quantum behaviour of this system is characterized by, spin-orbit coupling induced large-gap (≈0.36 eV) with isolated Dirac cone along the edges indicating potential room temperature spin-transport applications. Further investigations of spin Hall conductivity and the Berry curvatures unravel high conductivity as compared to previously explored xene's alongside the potential valley Hall effects. The non-trivial topological character is quantified in terms of theZ2invariant asν= 1 and Chern numberC= 1. Also, for practical purposes, we report that,hBN/TeO/hBN quantum-wells can be strain engineered to realize a sizeable non-trivial gap (≈0.11 eV). We finally conclude that, functionalization of group VI elemental monolayer with oxygen gives rise to, exotic quantum properties which are robust against surface oxidation and degradations while providing viable electronic degrees of freedom for spintronic/valleytronic applications.
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Affiliation(s)
- Raghottam M Sattigeri
- Department of Physics, Faculty of Science, The Maharaja Sayajirao University of Baroda, Vadodara-390002, Gujarat, India
| | - Prafulla K Jha
- Department of Physics, Faculty of Science, The Maharaja Sayajirao University of Baroda, Vadodara-390002, Gujarat, India
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41
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Xie Z, Zhang B, Ge Y, Zhu Y, Nie G, Song Y, Lim CK, Zhang H, Prasad PN. Chemistry, Functionalization, and Applications of Recent Monoelemental Two-Dimensional Materials and Their Heterostructures. Chem Rev 2021; 122:1127-1207. [PMID: 34780169 DOI: 10.1021/acs.chemrev.1c00165] [Citation(s) in RCA: 43] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/17/2023]
Abstract
The past decades have witnessed a rapid expansion in investigations of two-dimensional (2D) monoelemental materials (Xenes), which are promising materials in various fields, including applications in optoelectronic devices, biomedicine, catalysis, and energy storage. Apart from graphene and phosphorene, recently emerging 2D Xenes, specifically graphdiyne, borophene, arsenene, antimonene, bismuthene, and tellurene, have attracted considerable interest due to their unique optical, electrical, and catalytic properties, endowing them a broader range of intriguing applications. In this review, the structures and properties of these emerging Xenes are summarized based on theoretical and experimental results. The synthetic approaches for their fabrication, mainly bottom-up and top-down, are presented. Surface modification strategies are also shown. The wide applications of these emerging Xenes in nonlinear optical devices, optoelectronics, catalysis, biomedicine, and energy application are further discussed. Finally, this review concludes with an assessment of the current status, a description of existing scientific and application challenges, and a discussion of possible directions to advance this fertile field.
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Affiliation(s)
- Zhongjian Xie
- Institute of Pediatrics, Shenzhen Children's Hospital, Shenzhen 518038, Guangdong, P.R. China.,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, and Otolaryngology Department of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen 518060, P.R. China
| | - Bin Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, and Otolaryngology Department of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen 518060, P.R. China
| | - Yanqi Ge
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, and Otolaryngology Department of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen 518060, P.R. China
| | - Yao Zhu
- Shenzhen Medical Ultrasound Engineering Center, Department of Ultrasonography, Shenzhen People's Hospital, Second Clinical Medical College of Jinan University, First Clinical Medical College of Southern University of Science and Technology, Shenzhen 518020, China
| | - Guohui Nie
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, and Otolaryngology Department of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen 518060, P.R. China
| | - YuFeng Song
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, and Otolaryngology Department of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen 518060, P.R. China
| | - Chang-Keun Lim
- Department of Chemical and Materials Engineering, School of Engineering and Digital Sciences, Nazarbayev University, Nur-Sultan City 010000, Kazakhstan
| | - Han Zhang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, and Otolaryngology Department of the First Affiliated Hospital, Shenzhen Second People's Hospital, Health Science Center, Shenzhen University, Shenzhen 518060, P.R. China
| | - Paras N Prasad
- Institute for Lasers, Photonics, and Biophotonics and Department of Chemistry, University at Buffalo, State University of New York, Buffalo 14260-3000, United States
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42
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Hess P. Bonding, structure, and mechanical stability of 2D materials: the predictive power of the periodic table. NANOSCALE HORIZONS 2021; 6:856-892. [PMID: 34494064 DOI: 10.1039/d1nh00113b] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
This tutorial review describes the ongoing effort to convert main-group elements of the periodic table and their combinations into stable 2D materials, which is sometimes called modern 'alchemy'. Theory is successfully approaching this goal, whereas experimental verification is lagging far behind in the synergistic interplay between theory and experiment. The data collected here gives a clear picture of the bonding, structure, and mechanical performance of the main-group elements and their binary compounds. This ranges from group II elements, with two valence electrons, to group VI elements with six valence electrons, which form not only 1D structures but also, owing to their variable oxidation states, low-symmetry 2D networks. Outside of these main groups reviewed here, predominantly ionic bonding may be observed, for example in group II-VII compounds. Besides high-symmetry graphene with its shortest and strongest bonds and outstanding mechanical properties, low-symmetry 2D structures such as various borophene and tellurene phases with intriguing properties are receiving increasing attention. The comprehensive discussion of data also includes bonding and structure of few-layer assemblies, because the electronic properties, e.g., the band gap, of these heterostructures vary with interlayer layer separation and interaction energy. The available data allows the identification of general relationships between bonding, structure, and mechanical stability. This enables the extraction of periodic trends and fundamental rules governing the 2D world, which help to clear up deviating results and to estimate unknown properties. For example, the observed change of the bond length by a factor of two alters the cohesive energy by a factor of four and the extremely sensitive Young's modulus and ultimate strength by more than a factor of 60. Since the stiffness and strength decrease with increasing atom size on going down the columns of the periodic table, it is important to look for suitable allotropes of elements and binaries in the upper rows of the periodic table when mechanical stability and robustness are issues. On the other hand, the heavy compounds are of particular interest because of their low-symmetry structures with exotic electronic properties.
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Affiliation(s)
- Peter Hess
- Institute of Physical Chemistry, INF 253, University of Heidelberg, 69120 Heidelberg, Germany.
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43
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Fan FR, Wang R, Zhang H, Wu W. Emerging beyond-graphene elemental 2D materials for energy and catalysis applications. Chem Soc Rev 2021; 50:10983-11031. [PMID: 34617521 DOI: 10.1039/c9cs00821g] [Citation(s) in RCA: 77] [Impact Index Per Article: 25.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
Elemental two-dimensional (2D) materials have emerged as promising candidates for energy and catalysis applications due to their unique physical, chemical, and electronic properties. These materials are advantageous in offering massive surface-to-volume ratios, favorable transport properties, intriguing physicochemical properties, and confinement effects resulting from the 2D ultrathin structure. In this review, we focus on the recent advances in emerging energy and catalysis applications based on beyond-graphene elemental 2D materials. First, we briefly introduce the general classification, structure, and properties of elemental 2D materials and the new advances in material preparation. We then discuss various applications in energy harvesting and storage, including solar cells, piezoelectric and triboelectric nanogenerators, thermoelectric devices, batteries, and supercapacitors. We further discuss the explorations of beyond-graphene elemental 2D materials for electrocatalysis, photocatalysis, and heterogeneous catalysis. Finally, the challenges and perspectives for the future development of elemental 2D materials in energy and catalysis are discussed.
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Affiliation(s)
- Feng Ru Fan
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA. .,Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA
| | - Ruoxing Wang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA. .,Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong, China. .,Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong, China.,Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518057, China
| | - Wenzhuo Wu
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, USA. .,Flex Laboratory, Purdue University, West Lafayette, Indiana 47907, USA.,Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA
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44
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Zhang H, Wang J, Guégan F, Yu S, Frapper G. Prediction of allotropes of tellurium with molecular, one- and two-dimensional covalent nets for photofunctional applications. RSC Adv 2021; 11:29965-29975. [PMID: 35480238 PMCID: PMC9041115 DOI: 10.1039/d1ra04997f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2021] [Accepted: 08/31/2021] [Indexed: 01/14/2023] Open
Abstract
In the present work, three new semiconducting two-dimensional (2D) Te phases containing three- and four-coordinated Te centers were proposed by using evolutionary algorithms combined with first-principles calculations. Using density functional theory calculations, we discussed the bonding and electronic properties in these phases, and subsequently rationalized their structures. The viability of these predicted structures was demonstrated by evaluating their thermodynamic, dynamic, mechanical, and thermal stabilities. Moreover, a significant direct band gap (0.951-1.512 eV) and excellent transport properties were evidenced in 2D Te nets, which suggests that they could be promising photovoltaic materials candidates. This is further supported by the stability of the associated bulk layered counterparts of the 2D Te nets.
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Affiliation(s)
- Heng Zhang
- State Key Laboratory of Solidification Processing, International Center for Materials Discovery, School of Materials Science and Engineering, Northwestern Polytechnical University Xi'an Shaanxi 710072 People's Republic of China +86-199-9190-9598 +86-159-3737-9685
- Applied Quantum Chemistry Group, E4, IC2MP, UMR 7285, Poitiers University, CNRS 4 Rue Michel Brunet TSA 51106 86073 Poitiers Cedex 9 France +33-6481-3241-3
| | - Junjie Wang
- State Key Laboratory of Solidification Processing, International Center for Materials Discovery, School of Materials Science and Engineering, Northwestern Polytechnical University Xi'an Shaanxi 710072 People's Republic of China +86-199-9190-9598 +86-159-3737-9685
| | - Frédéric Guégan
- Applied Quantum Chemistry Group, E4, IC2MP, UMR 7285, Poitiers University, CNRS 4 Rue Michel Brunet TSA 51106 86073 Poitiers Cedex 9 France +33-6481-3241-3
| | - Shuyin Yu
- MSEA International Institute for Materials Genome Jinxiu Rd. 1 Gu'an Hebei 065500 People's Republic of China +86-180-0326-2785
| | - Gilles Frapper
- State Key Laboratory of Solidification Processing, International Center for Materials Discovery, School of Materials Science and Engineering, Northwestern Polytechnical University Xi'an Shaanxi 710072 People's Republic of China +86-199-9190-9598 +86-159-3737-9685
- Applied Quantum Chemistry Group, E4, IC2MP, UMR 7285, Poitiers University, CNRS 4 Rue Michel Brunet TSA 51106 86073 Poitiers Cedex 9 France +33-6481-3241-3
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45
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Khan K, Tareen AK, Iqbal M, Wang L, Ma C, Shi Z, Ye Z, Ahmad W, Rehman Sagar RU, Shams SS, Sophia PJ, Ullah Z, Xie Z, Guo Z, Zhang H. Navigating recent advances in monoelemental materials (Xenes)-fundamental to biomedical applications. PROG SOLID STATE CH 2021. [DOI: 10.1016/j.progsolidstchem.2021.100326] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
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46
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Nagarajan V, Chandiramouli R. Interaction studies of glycine, acetate and methylamine on β-tellurene nanoribbon – A first-principles analysis. J Mol Graph Model 2021; 105:107895. [DOI: 10.1016/j.jmgm.2021.107895] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2021] [Revised: 03/01/2021] [Accepted: 03/02/2021] [Indexed: 02/02/2023]
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47
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Wang Y, Liu S, Li Q, Quhe R, Yang C, Guo Y, Zhang X, Pan Y, Li J, Zhang H, Xu L, Shi B, Tang H, Li Y, Yang J, Zhang Z, Xiao L, Pan F, Lu J. Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:056501. [PMID: 33761489 DOI: 10.1088/1361-6633/abf1d4] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2020] [Accepted: 03/24/2021] [Indexed: 06/12/2023]
Abstract
Over the past decade, two-dimensional semiconductors (2DSCs) have aroused wide interest due to their extraordinary electronic, magnetic, optical, mechanical, and thermal properties, which hold potential in electronic, optoelectronic, thermoelectric applications, and so forth. The field-effect transistor (FET), a semiconductor gated with at least three terminals, is pervasively exploited as the device geometry for these applications. For lack of effective and stable substitutional doping techniques, direct metal contact is often used in 2DSC FETs to inject carriers. A Schottky barrier (SB) generally exists in the metal-2DSC junction, which significantly affects and even dominates the performance of most 2DSC FETs. Therefore, low SB or Ohmic contact is highly preferred for approaching the intrinsic characteristics of the 2DSC channel. In this review, we systematically introduce the recent progress made in theoretical prediction of the SB height (SBH) in the 2DSC FETs and the efforts made both in theory and experiments to achieve low SB contacts. From the comparison between the theoretical and experimentally observed SBHs, the emerging first-principles quantum transport simulation turns out to be the most powerful theoretical tool to calculate the SBH of a 2DSC FET. Finally, we conclude this review from the viewpoints of state-of-the-art electrode designs for 2DSC FETs.
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Affiliation(s)
- Yangyang Wang
- Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, People's Republic of China
| | - Shiqi Liu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Qiuhui Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People's Republic of China
| | - Chen Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ying Guo
- School of Physics and Telecommunication Engineering, Shaanxi Key Laboratory of Catalysis, Shaanxi University of Technology, Hanzhong 723001, People's Republic of China
| | - Xiuying Zhang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Yuanyuan Pan
- State Key Laboratory of Heavy Oil Processing, Institute of New Energy, College of Chemical Engineering, China University of Petroleum (East China), Qingdao, 266580, People's Republic of China
| | - Jingzhen Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Han Zhang
- School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Bowen Shi
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Hao Tang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ying Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, People's Republic of China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
| | - Lin Xiao
- Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, People's Republic of China
| | - Feng Pan
- School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen 518055, People's Republic of China
| | - Jing Lu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, People's Republic of China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, People's Republic of China
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Tareen AK, Khan K, Aslam M, Zhang H, Liu X. Recent progress, challenges, and prospects in emerging group-VIA Xenes: synthesis, properties and novel applications. NANOSCALE 2021; 13:510-552. [PMID: 33404570 DOI: 10.1039/d0nr07444f] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The discovery of graphene (G) attracted considerable attention to the study of other novel two-dimensional materials (2DMs), which is identified as modern day "alchemy" since researchers are converting the majority of promising periodic table elements into 2DMs. Among the family of 2DMs, the newly invented monoelemental, atomically thin 2DMs of groups IIIA-VIA, called "Xenes" (where, X = IIIA-VIA group elements, and "ene" is the Latin word for nanosheets (NSs)), are a very active area of research for the fabrication of future nanodevices with high speed, low cost and elevated efficiency. Currently, any novel structure of 2DMs from the typical Xenes will probably be applicable in electronic technology. Analysis of their possible highly sensitive synthesis and characterization present opportunities for theoretically examining proposed 2D-Xenes with atomic precision in ideal circumstances, thus providing theoretical predictions for experimental support. Several theoretically predicted and experimentally synthesized 2D-Xene materials have been investigated for the group-VIA elements (tellurene (2D-Te), and selenene (2D-Se)), which are similar to topological insulators (TIs), thus potentially rendering them suitable materials for application in upcoming nanodevices. Although the investigation and device application of these materials are still in their infancy, theoretical studies and a few experiment-based investigations have proven that they are complementary to conventional (i.e., layered bulk-derived) 2DMs. This review focuses on the synthesis of novel group-VIA Xenes (2D-Te and 2D-Se) and summarizes the current development in understanding their basic properties, with the current advancement in signifying device applications. Lastly, the future research prospects, further advanced applications and associated shortcomings of the group-VIA Xenes are summarized and highlighted.
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Affiliation(s)
- Ayesha Khan Tareen
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China. and Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China.
| | - Karim Khan
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China. and School of Electrical Engineering & Intelligentization, Dongguan University of Technology, Dongguan (DGUT), Dongguan, 523808, Guangdong Province, P. R. China and Government Degree college Paharpur, Gomel University, Dera Ismail Khan, Khyber Pakhtoonkhwa (K.P.K.), 29220, Islamic Republic of Pakistan
| | - Muhammad Aslam
- Government Degree college Paharpur, Gomel University, Dera Ismail Khan, Khyber Pakhtoonkhwa (K.P.K.), 29220, Islamic Republic of Pakistan
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy, Shenzhen University, Shenzhen, 518060, P.R. China.
| | - Xinke Liu
- College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
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49
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Yin Y, Zhang Z, Zhong H, Shao C, Wan X, Zhang C, Robertson J, Guo Y. Tellurium Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications. ACS APPLIED MATERIALS & INTERFACES 2021; 13:3387-3396. [PMID: 33404208 DOI: 10.1021/acsami.0c18767] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The nanowire (NW) and gate-all-around (GAA) technologies are regarded as the ultimate solutions to sustain Moore's law benefitting from the exceptional gate control ability. Herein, we conduct a comprehensive ab initio quantum transportation calculation at different diameters (single trigonal-tellurium NW (1Te) and three trigonal-tellrium NW (3Te)) sub-5 nm tellurium (Te) GAA NW metal-oxide-semiconductor field-effect transistors (MOSFETs). The results claim that the performance of 1Te FETs is superior to that of 3Te FETs. Encouragingly, the single Te (1Te) n-type MOSFET with 5 nm gate length achieves International Technology Roadmap for Semiconductors (ITRS) high-performance (HP) and low-dissipation (LP) goals simultaneously. Especially, the HP on-state current reaches 6479 μA/μm, 7 times higher than the goal (900 μA/μm). Moreover, the subthreshold swing of the n-type 1Te FETs even hits a thermionic limit of 60 mV/dec. In terms of the spin-orbit coupling effect, the drain currents of devices are further improved, particularly the p-type Te FETs can also achieve the ITRS HP goal. Hence, the GAA Te MOSFETs provide a feasible approach for state-of-the-art sub-5 nm device applications.
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Affiliation(s)
- Yiheng Yin
- School of Electrical and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Zhaofu Zhang
- Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, United Kingdom
| | - Hongxia Zhong
- School of Physical Science and Technology, Wuhan University, Wuhan, Hubei 430072, China
| | - Chen Shao
- School of Electrical and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Xuhao Wan
- School of Electrical and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - Can Zhang
- School of Electrical and Automation, Wuhan University, Wuhan, Hubei 430072, China
| | - John Robertson
- School of Electrical and Automation, Wuhan University, Wuhan, Hubei 430072, China
- Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, United Kingdom
| | - Yuzheng Guo
- School of Electrical and Automation, Wuhan University, Wuhan, Hubei 430072, China
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50
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Li Q, Xu L, Liu S, Yang J, Fang S, Li Y, Ma J, Zhang Z, Quhe R, Yang J, Lu J. Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202000252] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Qiuhui Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
| | - Lin Xu
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking University Beijing 100871 P. R. China
| | - Shiqi Liu
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
| | - Jie Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
| | - Shibo Fang
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
| | - Ying Li
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
| | - Jiachen Ma
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
| | - Zhiyong Zhang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking University Beijing 100871 P. R. China
| | - Ruge Quhe
- State Key Laboratory of Information Photonics and Optical Communications and School of Science Beijing University of Posts and Telecommunications Beijing 100876 P. R. China
| | - Jinbo Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
- Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices Beijing 100871 P. R. China
| | - Jing Lu
- State Key Laboratory for Mesoscopic Physics and Department of Physics Peking University Beijing 100871 P. R. China
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics Peking University Beijing 100871 P. R. China
- Collaborative Innovation Center of Quantum Matter Beijing 100871 P. R. China
- Beijing Key Laboratory for Magnetoelectric Materials and Devices Beijing 100871 P. R. China
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