Metallic Vanadium Disulfide Nanosheets as a Platform Material for Multifunctional Electrode Applications

Two-dimensional layered material photodetectors: what could be the upcoming downstream applications beyond prototype devices?

With distinctive advantages spanning excellent flexibility, rich physical properties, strong electrostatic tunability, dangling-bond-free surface, and ease of integration, 2D layered materials (2DLMs) have demonstrated tremendous potential for photodetection. However, to date, most of the research enthusiasm has been merely focused on developing novel prototype devices. In the past few years, researchers have also been devoted to developing various downstream applications based on 2DLM photodetectors to contribute to promoting them from fundamental research to practical commercialization, and extensive accomplishments have been realized. In spite of the remarkable advancements, these fascinating research findings are relatively scattered. To date, there is still a lack of a systematic and profound summarization regarding this fast-evolving domain. This is not beneficial to researchers, especially researchers just entering this research field, who want to have a quick, timely, and comprehensive inspection of this fascinating domain. To address this issue, in this review, the emerging downstream applications of 2DLM photodetectors in extensive fields, including imaging, health monitoring, target tracking, optoelectronic logic operation, ultraviolet monitoring, optical communications, automatic driving, and acoustic signal detection, have been systematically summarized, with the focus on the underlying working mechanisms. At the end, the ongoing challenges of this rapidly progressing domain are identified, and the potential schemes to address them are envisioned, which aim at navigating the future exploration as well as fully exerting the pivotal roles of 2DLMs towards the practical optoelectronic industry.

Atomically Thin Kagome-Structured Co9Te16 Achieved through Self-Intercalation and Its Flat Band Visualization

Kagome materials have recently garnered substantial attention due to the intrinsic flat band feature and the stimulated magnetic and spin-related many-body physics. In contrast to their bulk counterparts, two-dimensional (2D) kagome materials feature more distinct kagome bands, beneficial for exploring novel quantum phenomena. Herein, we report the direct synthesis of an ultrathin kagome-structured Co-telluride (Co9Te16) via a molecular beam epitaxy (MBE) route and clarify its formation mechanism from the Co-intercalation in the 1T-CoTe2 layers. More significantly, we unveil the flat band states in the ultrathin Co9Te16 and identify the real-space localization of the flat band states by in situ scanning tunneling microscopy/spectroscopy (STM/STS) combined with first-principles calculations. A ferrimagnetic order is also predicted in kagome-Co9Te16. This work should provide a novel route for the direct synthesis of ultrathin kagome materials via a metal self-intercalation route, which should shed light on the exploration of the intriguing flat band physics in the related systems.

2D Vanadium Sulfides: Synthesis, Atomic Structure Engineering, and Charge Density Waves

Two ultimately thin vanadium-rich 2D materials based on VS2 are created via molecular beam epitaxy and investigated using scanning tunneling microscopy, X-ray photoemission spectroscopy, and density functional theory (DFT) calculations. The controlled synthesis of stoichiometric single-layer VS2 or either of the two vanadium-rich materials is achieved by varying the sample coverage and sulfur pressure during annealing. Through annealing of small stoichiometric single-layer VS2 islands without S pressure, S-vacancies spontaneously order in 1D arrays, giving rise to patterned adsorption. Via the comparison of DFT calculations with scanning tunneling microscopy data, the atomic structure of the S-depleted phase, with a stoichiometry of V4S7, is determined. By depositing larger amounts of vanadium and sulfur, which are subsequently annealed in a S-rich atmosphere, self-intercalated ultimately thin V5S8-derived layers are obtained, which host 2 × 2 V-layers between sheets of VS2. We provide atomic models for the thinnest V5S8-derived structures. Finally, we use scanning tunneling spectroscopy to investigate the charge density wave observed in the 2D V5S8-derived islands.

3D printing of layered vanadium disulfide for water-in-salt electrolyte zinc-ion batteries

Miniaturized aqueous zinc ion batteries are attractive energy storage devices for wearable electronics, owing to their safety and low cost. Layered vanadium disulfide (VS2) has demonstrated competitive charge storage capability for aqueous zinc ion batteries, as a result of its multivalent states and large interlayer spacing. However, VS2 electrodes are affected by quick oxide conversion, and they present predefined geometries and aspect ratios, which hinders their integration in wearables devices. Here, we demonstrate the formulation of a suitable ink for extrusion-based 3D printing (direct ink writing) based on micro flowers of layered VS2 obtained using a scalable hydrothermal process. 3D printed architectures of arbitrary design present electrochemically active, porous and micron-sized struts with tuneable mass loading. These were used as cathodes for aqueous zinc-ion battery electrodes. The 3D printed VS2 cathodes were assembled with carbon/zinc foil anodes to form full cells of zinc-ion, demonstrating a capacity of ∼1.98 mA h cm-2 with an operating voltage of 1.5 V. Upon cycling a capacity retention of around 65% was achieved after ∼100 cycles. The choice of the electrolyte (a water-in-salt electrolyte) and the design of the pre-processing of the 3D printed cathode ensured improved stability against dissolution and swift oxidation, notorious challenges for VS2 in an aqueous environment. This works paves the way towards programmable manufacturing of miniaturized aqueous batteries and the materials processing approach can be applied to different materials and battery systems to improve stability.

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Gate-controlled ionic intercalation in the van der Waals gap of 2D layered materials can induce novel phases and unlock new properties. However, this strategy is often unsuitable for densely packed 2D non-layered materials. The non-layered rhombohedral Cr2S3 is an intrinsic heterodimensional superlattice with alternating layers of 2D CrS2 and 0D Cr1/3. Here an innovative chemical vapor deposition method is reported, utilizing strategically modified metal precursors to initiate entirely new seed layers, yields ultrathin inclined-standing grown 2D Cr2S3 nanosheets with edge instead of face contact with substrate surfaces, enabling rapid all-dry transfer to other substrates while ensuring high crystal quality. The unconventional ordered vacancy channels within the 0D Cr1/3 layers, as revealed by cross-sectional scanning transmission electron microscope, permitting the insertion of Li+ ions. An unprecedented metal-insulator transition, with a resistance modulation of up to six orders of magnitude at 300 K, is observed in Cr2S3-based ionic field-effect transistors. Theoretical calculations corroborate the metallization induced by Li-ion intercalation. This work sheds light on the understanding of growth mechanism, structure-property correlation and highlights the diverse potential applications of 2D non-layered Cr2S3 superlattice.

Engineering van der Waals Contacts by Interlayer Dipoles

Tuning the interfacial Schottky barrier with van der Waals (vdW) contacts is an important solution for two-dimensional (2D) electronics. Here we report that the interlayer dipoles of 2D vdW superlattices (vdWSLs) can be used to engineer vdW contacts to 2D semiconductors. A bipolar WSe2 with Ba6Ta11S28 (BTS) vdW contact was employed to exhibit this strategy. Strong interlayer dipoles can be formed due to charge transfer between the Ba3TaS5 and TaS2 layers. Mechanical exfoliation breaks the superlattice and produces two distinguished surfaces with TaS2 and Ba3TaS5 terminations. The surfaces thus have opposite surface dipoles and consequently different work functions. Therefore, all the devices fall into two categories in accordance with the rectifying direction, which were verified by electrical measurements and scanning photocurrent microscopy. The growing vdWSL family along with the addition surface dipoles enables prospective vdW contact designs and have practical application in nanoelectronics and nano optoelectronics.

Facet-Dependent Interfacial Charge Transfer between T-Phase VS2 Nanoflakes and Rutile TiO2 Single Crystals

The hybridizations of two-dimensional (2D) metallic materials with semiconducting transition metal oxides (TMOs) register attractive heterojunctions, which can find various applications in photostimulated circumstances. In this work, we developed an ambient-pressure chemical vapor deposition method to directly grow T-VS2 on atomically smooth rutile TiO2 single crystals with different terminations and thus successfully constructed a heterojunction model of VS2/TiO2 with a well-defined clean interface. Detailed measurements with Kelvin probe force microscopy revealed the facet-dependent charge transfer occurring at the VS2/TiO2 interfaces, seeing variations not only in the amount and direction of the transferred electrons but also in the photoinduced surface potential changes and the dynamics of photogenerated charge carriers under ultraviolet irradiation. Interestingly, ultrathin T-VS2 was found with considerable magnetism at room temperature, disregarding the charge exchange with the TiO2 substrates. These results may bring deep insights into the photoinspired functionalities of the hybridized system combining metallic transition metal dichalcogenides and TMO materials.

Phase Engineering of Nanomaterials: Transition Metal Dichalcogenides

Crystal phase, a critical structural characteristic beyond the morphology, size, dimension, facet, etc., determines the physicochemical properties of nanomaterials. As a group of layered nanomaterials with polymorphs, transition metal dichalcogenides (TMDs) have attracted intensive research attention due to their phase-dependent properties. Therefore, great efforts have been devoted to the phase engineering of TMDs to synthesize TMDs with controlled phases, especially unconventional/metastable phases, for various applications in electronics, optoelectronics, catalysis, biomedicine, energy storage and conversion, and ferroelectrics. Considering the significant progress in the synthesis and applications of TMDs, we believe that a comprehensive review on the phase engineering of TMDs is critical to promote their fundamental studies and practical applications. This Review aims to provide a comprehensive introduction and discussion on the crystal structures, synthetic strategies, and phase-dependent properties and applications of TMDs. Finally, our perspectives on the challenges and opportunities in phase engineering of TMDs will also be discussed.

van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for next-generation electronics owing to their atomically thin structures and surfaces devoid of dangling bonds. However, establishing high-quality metal contacts with TMDs presents a critical challenge, primarily attributed to their ultrathin bodies and delicate lattices. These distinctive characteristics render them susceptible to physical damage and chemical reactions when conventional metallization approaches involving "high-energy" processes are implemented. To tackle this challenge, the concept of van der Waals (vdW) contacts has recently been proposed as a "low-energy" alternative. Within the vdW geometry, metal contacts can be physically laminated or gently deposited onto the 2D channel of TMDs, ensuring the formation of atomically clean and electronically sharp contact interfaces while preserving the inherent properties of the 2D TMDs. Consequently, a considerable number of vdW contact devices have been extensively investigated, revealing unprecedented transport physics or exceptional device performance that was previously unachievable. This review presents recent advancements in vdW contacts for TMD transistors, discussing the merits, limitations, and prospects associated with each device geometry. By doing so, our purpose is to offer a comprehensive understanding of the current research landscape and provide insights into future directions within this rapidly evolving field.

Dramatically Enhanced Valley-Polarized Emission by Alloying and Electrical Tuning of Monolayer WTe2 x S2(1- x ) Alloys at Room Temperature with 1T'-WTe2 -Contact

Monolayer ternary tellurides based on alloying different transition metal dichalcogenides (TMDs) can result in new two-dimensional (2D) materials ranging from semiconductors to metals and superconductors with tunable optical and electrical properties. Semiconducting WTe2 x S2(1- x ) monolayer possesses two inequivalent valleys in the Brillouin zone, each valley coupling selectively with circularly polarized light (CPL). The degree of valley polarization (DVP) under the excitation of CPL represents the purity of valley polarized photoluminescence (PL), a critical parameter for opto-valleytronic applications. Here, new strategies to efficiently tailor the valley-polarized PL from semiconducting monolayer WTe2 x S2(1- x ) at room temperature (RT) through alloying and back-gating are presented. The DVP at RT is found to increase drastically from < 5% in WS2 to 40% in WTe0.12 S1.88 by Te-alloying to enhance the spin-orbit coupling. Further enhancement and control of the DVP from 40% up to 75% is demonstrated by electrostatically doping the monolayer WTe0.12 S1.88 via metallic 1T'-WTe2 electrodes, where the use of 1T'-WTe2 substantially lowers the Schottky barrier height (SBH) and weakens the Fermi-level pinning of the electrical contacts. The demonstration of drastically enhanced DVP and electrical tunability in the valley-polarized emission from 1T'-WTe2 /WTe0.12 S1.88 heterostructures paves new pathways towards harnessing valley excitons in ultrathin valleytronic devices for RT applications.

Defect-Engineered VS2 Electrocatalysts for Lithium-Sulfur Batteries

Defective two-dimensional transition metal dichalcogenides can be effective electrocatalysts for Li-S batteries, but the relationship between defect types and battery performance is unclear. In this work, we designed S vacancy-type SV-VS2 and V self-intercalated-type VI-VS2 and measured their catalytic activities in Li-S batteries. Compared with self-intercalating V atoms, S vacancies accelerated Li+ diffusion and SV-VS2 as a Li+ "reservoir" promoted the sulfur conversion kinetics significantly. In addition, the presence of sulfur vacancies promoted the lithiation behavior of SV-VS2 during discharge, leading to an enhancement of the catalytic ability of SV-VS2. However, this lithiation phenomenon weakened the catalytic activity of VI-VS2. Overall, SV-VS2 had better adsorption and catalytic activity. Li-S batteries with SV-VS2-coated separators delivered high rate performance and excellent cycling stability, with a capacity decay rate of 0.043% over 880 cycles at 1.0 C. This work provides an effective strategy for designing efficient Li-S battery electrocatalysts using defect engineering.

Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides

2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.

Tear-based MMP-9 detection: A rapid antigen test for ocular inflammatory disorders using vanadium disulfide nanowires assisted chemi-resistive biosensor

A sensitive, non-invasive, and biomarker detection in tear fluids for inflammation in potentially blinding eye diseases could be of great significance as a rapid diagnostic tool for quick clinical decisions. In this work, we propose a tear-based MMP-9 antigen testing platform using hydrothermally synthesized vanadium disulfide nanowires. Also, various factors contributing to baseline drifts of the chemiresistive sensor including nanowire coverage on the interdigitated microelectrode of the sensor, sensor response duration, and effect of MMP-9 protein in different matrix solutions were identified. The drifts on the sensor baseline due to nanowire coverage on the sensor were corrected using substrate thermal treatment providing a more uniform distribution of nanowires on the electrode which brought the baseline drift to 18% (coefficient of variations, CV = 18%). This biosensor exhibited sub-femto level limits of detection (LODs) of 0.1344 fg/mL (0.4933 fmoL/l) and 0.2746 fg/mL (1.008 fmoL/l) in 10 mM phosphate buffer saline (PBS) and artificial tear solution, respectively. For a practical tear MMP-9 detection, the proposed biosensor response was validated with multiplex ELISA using tear samples from five healthy controls which showed excellent precision. This label-free and non-invasive platform can serve as an efficient diagnostic tool for the early detection and monitoring of various ocular inflammatory diseases.

The Controllable Synthesis of High-Quality Two-Dimensional Iron Sulfide with Specific Phases

2D Fe-chalcogenides have drawn significant attention due to their unique structural phases and distinct properties in exploring magnetism and superconductivity. However, it remains a significant challenge to synthesize 2D Fe-chalcogenides with specific phases in a controllable manner since Fe-chalcogenides have multiple phases. Herein, a molecular sieve-assisted strategy is reported for synthesizing ultrathin 2D iron sulfide on substrates via the chemical vapor deposition method. Using a molecular sieve and tuning growth temperatures to control the partial pressures of precursor concentrations, hexagonal FeS, tetragonal FeS, and non-stoichiometric Fe₇ S₈ nanoflakes can be precisely synthesized. The 2D h-FeS, t-FeS, and Fe₇ S₈ have high conductivities of 5.4 × 10⁵ S m^-1 , 5.8 × 10⁵ S m^-1 , and 1.9 × 10⁶ S m^-1 . 2D tetragonal FeS shows a superconducting transition at 4 K. The spin reorientation at ≈30 K on the non-stoichiometric Fe₇ S₈ nanoflakes with ferrimagnetism up to room temperature has also been observed. The controllable synthesis of various phases of 2D iron sulfide may provide a route for synthesizing other 2D compounds with various phases.

Controlled Synthesis of Sub-Millimeter Nonlayered WO2 Nanoplates via a WSe2 -Assisted Method

2D metal oxides (2DMOs) have stimulated tremendous attention due to their distinct electronic structures and abundant surface chemistry. However, it remains a standing challenge for the synthesis of 2DMOs because of their intrinsic 3D lattice structure and ultrahigh synthesis temperature. Here, a reliable WSe₂ -assisted chemical vapor deposition (CVD) strategy to grow nonlayered WO₂ nanoplates with tunable thickness and lateral dimension is reported. Optical microscopy and scanning electron microscopy studies demonstrate that the WO₂ nanoplates exhibit a well-faceted rhombic geometry with a lateral dimension up to the sub-millimeter level (≈135 µm), which is the largest size of 2DMO single crystals obtained by CVD to date. Scanning transmission electron microscopy studies reveal that the nanoplates are high-quality single crystals. Electrical measurements show the nanoplates exhibit metallic behavior with strong anisotropic resistance, outstanding conductivity of 1.1 × 10⁶  S m^-1 , and breakdown current density of 7.1 × 10⁷  A cm^-2 . More interestingly, low-temperature magnetotransport studies demonstrate that the nanoplates show a quantum-interference-induced weak-localization effect. The developed WSe₂ -assisted strategy for the growth of WO₂ nanoplates can enrich the library of 2DMO materials and provide a material platform for other property explorations based on 2D WO₂ .

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

Collective Magnetic Behavior in Vanadium Telluride Induced by Self-Intercalation

Self-intercalation of native magnetic atoms within the van der Waals (vdW) gap of layered two-dimensional (2D) materials provides a degree of freedom to manipulate magnetism in low-dimensional systems. Among various vdW magnets, the vanadium telluride is an interesting system to explore the interlayer order-disorder transition of magnetic impurities due to its flexibility in taking nonstoichiometric compositions. In this work, we combine high-resolution scanning transmission electron microscopy (STEM) analysis with density functional theory (DFT) calculations and magnetometry measurements, to unveil the local atomic structure and magnetic behavior of V-rich V_1+xTe₂ nanoplates with embedded V₃Te₄ nanoclusters grown by chemical vapor deposition (CVD). The segregation of V intercalations locally stabilizes the self-intercalated V₃Te₄ magnetic phase, which possesses a distorted 1T'-like monoclinic structure. This phase transition is controlled by the electron doping from the intercalant V ions. The magnetic hysteresis loops show that the nanoplates exhibit superparamagnetism, while the temperature-dependent magnetization curves evidence a collective superspin-glass magnetic behavior of the nanoclusters at low temperature. Using four-dimensional (4D) STEM diffraction imaging, we reveal the formation of collective diffuse magnetic domain structures within the sample under the high magnetic fields inside the electron microscope. Our results shed light on the studies of dilute magnetism at the 2D limit and on strategies for the manipulation of magnetism for spintronic applications.

Composition-Controllable Syntheses and Property Modulations from 2D Ferromagnetic Fe5 Se8 to Metallic Fe3 Se4 Nanosheets

Exploring new-type 2D magnetic materials with high magnetic transition temperature and robust air stability has attracted wide attention for developing innovative spintronic devices. Recently, intercalation of native metal atoms into the van der Waals gaps of 2D layered transition metal dichalcogenides (TMDs) has been developed to form 2D non-layered magnetic TMDs, while only succeeded in limited systems (e.g., Cr₂ S₃ , Cr₅ Te₈ ). Herein, composition-controllable syntheses of 2D non-layered iron selenide nanosheets (25% Fe-intercalated triclinic Fe₅ Se₈ and 50% Fe-intercalated monoclinic Fe₃ Se₄ ) are firstly reported, via a robust chemical vapor deposition strategy. Specifically, the 2D Fe₅ Se₈ exhibits intrinsic room-temperature ferromagnetic property, which is explained by the change of electron spin states from layered 1T'-FeSe₂ to non-layered Fe-intercalated Fe₅ Se₈ based on density functional theory calculations. In contrast, the ultrathin Fe₃ Se₄ presents novel metallic features comparable with that of metallic TMDs. This work hereby sheds light on the composition-controllable synthesis and fundamental property exploration of 2D self-intercalation induced novel TMDs compounds, by propelling their application explorations in nanoelectronics and spintronics-related fields.

Energy Dissipation and Electrical Breakdown in Multilayer PtSe2 Electronics

Investigating the energy dissipation in micro- and nanoscale is fundamental to improve the performance and reliability of two-dimensional (2D) electronics. Recently, 2D platinum selenide (PtSe₂) has drawn extensive attention in developing next-generation functional devices due to its distinctive fusion of versatile properties. Toward practical applications of PtSe₂ devices, it is essential to understand the interfacial thermal properties between PtSe₂ and its substrate. Among them, the thermal boundary conductance (TBC) has played a critical role for out-of-plane heat dissipation of PtSe₂ devices. Here, we identify the energy dissipation behavior of multilayer PtSe₂ devices and extract the actual TBC value of the PtSe₂/SiO₂ interface by Raman thermometry with electrical bias. The obtained TBC value is about 8.6 MW m^-2 K^-1, and it belongs to the low end of as-known solid-solid interfaces, suggesting possible applications regarding thermoelectric devices or others reliant on a large temperature gradient. Furthermore, the maximum current density of the PtSe₂ device determines its threshold power, which is crucial for improving device design and guiding future applications. Therefore, we explore the electrical breakdown profile of the multilayer PtSe₂ device, revealing the breakdown current density of 17.7 MA cm^-2 and threshold power density of 0.2 MW cm^-2, which are larger than typical values for commonly used aluminum and copper. These results provide key insights into the energy dissipation of PtSe₂ devices and make PtSe₂ an excellent candidate for thermal confinement applications and nanometer-thin interconnects, which will benefit the development of energy-efficient functional 2D devices.

Van der Waals-Interface-Dominated All-2D Electronics

The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.

Recent advances in metallic transition metal dichalcogenides as electrocatalysts for hydrogen evolution reaction

Layered metallic transition metal dichalcogenides (MTMDs) exhibit distinctive electrical and catalytic properties to drive basal plane activity, and, therefore, they have emerged as promising alternative electrocatalysts for sustainable hydrogen evolution reactions (HERs). A key challenge for realizing MTMDs-based electrocatalysts is the controllable and scalable synthesis of high-quality MTMDs and the development of engineering strategies that allow tuning their electronic structures. However, the lack of a method for the direct synthesis of MTMDs retaining the structural stability limits optimizing the structural design for the next generation of robust electrocatalysts. In this review, we highlight recent advances in the synthesis of MTMDs comprising groups VB and VIB and various routes for structural engineering to enhance the HER catalytic performance. Furthermore, we provide insight into the potential future directions and the development of MTMDs with high durability as electrocatalysts to generate green hydrogen through water-splitting technology.

Periodic Spiral Ripples on VS2 Flakes: A Tip-Enhanced Raman Investigation

Using atmospheric-pressure chemical vapor deposition, we have synthesized vanadium disulfide (VS₂) flakes with a metallic 1T phase that display nanoscale spiral surface ripples. To understand the origin of these chiral patterns in these transition metal dichalcogenides, tip-enhanced Raman spectroscopy and Kelvin probe force microscopies were jointly used to investigate their crystal structure, possible oxidation, and electronic properties, respectively. We found that the surface corrugation consists of small crystalline domains with distinct orientations. The change in local orientation is observed concomitantly with a spectral shift of the lattice modes of VS₂ and results in the formation of grain boundaries between the domains with distinct orientation. Additionally, the periodic surface structure is modulating the work function of VS₂ by 14 meV.

Facile one-pot iodine gas phase doping on 2D MoS2/CuS FET at room temperature

Electronic devices composed of semiconducting two-dimensional (2D) materials and ultrathin 2D metallic electrode materials, accompanying synergistic interactions and extraordinary properties, are becoming highly promising for future flexible and transparent electronic and optoelectronic device applications. Unlike devices with bulk metal electrode and 2D channel materials, devices with ultrathin 2D electrode and 2D channel are susceptible to chemical reactions in both channel and electrode surface due to the high surface to volume ratio of the 2D structures. However, so far, the effect of doping was primary concerned on the channel component, and there is lack of understanding in terms of how to modulate electrical properties of devices by engineering electrical properties of both the metallic electrode and the semiconducting channel. Here, we propose the novel, one-pot doping of the field-effect transistor (FET) based on 2D molybdenum disulfide (MoS₂) channel and ultrathin copper sulfide (CuS) electrodes under mild iodine gas environment at room temperature, which simultaneously modulates electrical properties of the 2D MoS₂channel and 2D CuS electrode in a facile and cost-effective way. After one-pot iodine doping, effective p-type doping of the channel and electrode was observed, which was shown through decreased off current level, improvedI_on/I_offratio and subthreshold swing value. Our results open up possibility for effectively and conveniently modulating electrical properties of FETs made of various 2D semiconductors and ultrathin contact materials without causing any detrimental damage.

VS2 wrapped Si nanowires as core-shell heterostructure photocathode for highly efficient photoelectrochemical water reduction performance

Interfacing an electrocatalyst with photoactive semiconductor surfaces is an emerging strategy to enhance the photocathode performance for the solar water reduction reaction. Herein, a core-shell heterostructure photocathode consisting of vanadium disulfide (VS₂) as a 2D layered electrocatalyst directly deposited on silicon nanowire (Si NWs) surface is realized via single-step chemical vapor deposition towards efficient hydrogen evolution under solar irradiation. In an electrochemical study, 2D VS₂/Si NWs photocathode exhibits a saturated photocurrent density (17 mA cm^-2) with a maximal photoconversion efficiency of 10.8% at -0.53 V vs. RHE in neutral electrolyte condition (pH∼7). Under stimulated irradiation, the heterostructure photocathode produces a hydrogen gas evolution around 23 μmol cm^-2 h^-1 (at 0 V vs. RHE). Further, electrochemical impedance spectroscopy (EIS) analysis reveals that the high performance of the core-shell photocathode is associated with the generation of the high density of electron-hole pairs and the separation of photocarriers with an extended lifetime. Density functional theory calculations substantiate that core-shell photocathodes are active at very low Gibbs free energy (ΔG_H*) with abundant hydrogen evolution reaction (HER) active sulphur sites. The charge density difference plot with Bader analysis of heterostructure reveals the accumulation of electrons on the sulphur sites via modulating the electronic band structure near the interface. Thus, facilitates the barrier-free charge transport owing to the synergistic effect of Si NWs@2D-VS₂ core-shell hybrid photocatalyst for enhanced solar water reduction performance.

Heterodimensional superlattice with in-plane anomalous Hall effect

Superlattices-a periodic stacking of two-dimensional layers of two or more materials-provide a versatile scheme for engineering materials with tailored properties1,2. Here we report an intrinsic heterodimensional superlattice consisting of alternating layers of two-dimensional vanadium disulfide (VS2) and a one-dimensional vanadium sulfide (VS) chain array, deposited directly by chemical vapour deposition. This unique superlattice features an unconventional 1T stacking with a monoclinic unit cell of VS2/VS layers identified by scanning transmission electron microscopy. An unexpected Hall effect, persisting up to 380 kelvin, is observed when the magnetic field is in-plane, a condition under which the Hall effect usually vanishes. The observation of this effect is supported by theoretical calculations, and can be attributed to an unconventional anomalous Hall effect owing to an out-of-plane Berry curvature induced by an in-plane magnetic field, which is related to the one-dimensional VS chain. Our work expands the conventional understanding of superlattices and will stimulate the synthesis of more extraordinary superstructures.

Insight into the Catalytic Role of Defect-Enriched Vanadium Sulfide for Regulating the Adsorption-Catalytic Conversion Behavior of Polysulfides in Li-S Batteries

The performance promotion of Li-S batteries relies primarily on inhibition of the shuttle effect and improvement of the catalytic-conversion reaction kinetics of polysulfides. Herein, we prepare defect-enriched VS₂ nanosheets (VS_2-x) as catalysts for Li-S batteries and further study the catalytic mechanism of VS_2-x via ex situ X-ray diffraction and in situ UV-vis spectroscopy. A multifunctional S cathode was also obtained by assembling VS_2-x on a C cloth to achieve high S loading for Li-S batteries. It was found that VS_2-x catalysts undergo a lithiation process in the work voltage of Li-S batteries, and the triggered Li_yVS_2-x intermediates reciprocate VS_2-x with a high catalytic activity so as to enhance the performance of Li-S batteries by promoting the dissociation process of S₆^2- to S₃^•-. Consequently, Li-S batteries with a C/VS_2-x/S cathode deliver a high reversible capacity (1471 mAh g^-1 at 0.1 C) and good cycling performance (low fading rate of 0.064% per cycle after 400 cycles). Meanwhile, the CC@VS_2-x/S cathode with a high S areal loading of 5.6 mg cm^-2 can render a satisfactory areal capacity of 4.22 mAh cm^-2 at 0.2 C and a cycle stability of over 100 cycles. Therefore, the study on the catalysis of Li_yVS_2-x intermediates provides a scientific view for revealing the catalysis mechanism of a sulfide-based electrocatalyst and boosting the development of an electrocatalyst for Li-S batteries.

All-van-der-Waals Barrier-Free Contacts for High-Mobility Transistors

Ultrathin 2D semiconductor devices are considered to have beyond-silicon potential but are severely troubled by the high Schottky barriers of the metal-semiconductor contacts, especially for p-type semiconductors. Due to the severe Fermi-level pinning effect and the lack of conventional semimetals with high work functions, their Schottky hole barriers are hardly removed. Here, an all-van-der-Waals barrier-free hole contact between p-type tellurene semiconductor and layered 1T'-WS₂ semimetal is reported, which achieves a zero Schottky barrier height of 3 ± 9 meV and a high field-effect mobility of ≈1304 cm² V^-1 s^-1 . The formation of such contacts can be attributed to the higher work function of ≈4.95 eV of the 1T'-WS₂ semimetal, which is in sharp contrast with low work function (4.1-4.7 eV) of conventional semimetals. The study defines an available strategy for eliminating the Schottky barrier of metal-semiconductor contacts, facilitating 2D-semiconductor-based electronics and optoelectronics to extend Moore's law.

Role of External Stimuli in Engineering Magnetic Phases and Real-Time Spin Dynamics of Co/Mn Oxides

Magnetism in atomically thin two-dimensional (2D) materials can be easily manipulated by alloying, functionalization, external ultrafast laser pulse, strain, electric field, etc. In this work, we have performed a series of spin-resolved density functional theory calculations on 2D magnetic hexagonal transition-metal oxide alloys, CoMnO4. We have explored different alloy patterns and found the most stable magnetic phases in each pattern, resulting in a stable ferromagnetic (FM) ground state depending upon the pattern. We have used Janus functionalization in these materials to tune the magnetic nature of the system from FM to antiferromagnetic (AFM) states. To further control the spin dynamics, we have applied an ultrafast laser pulse to the Janus systems to explore an AFM-to-FM transition process. Finally, applying strain and electric field to the Janus alloys allows us to tune the structure-property relationship in the 2D layers to obtain desirable spin arrangements.

Epitaxy of NiTe2 on WS2 for the p-Type Schottky Contact and Increased Photoresponse

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have great potential applications in the electronic and optoelectronic devices. Nevertheless, due to the difficulty in the efficient doping of atomic-thickness TMDCs or Fermi level pinning (FLP) effects at the metal/semiconductor interface, most TMDC devices exhibit the n-type conduction polarity, which significantly limits their functional applications based on the p-n junction. Here, 2D semi-metal NiTe₂ nanosheets were epitaxially grown on the WS₂ monolayer by a two-step chemical vapor deposition route. The microstructure and optical characterizations confirm that the vertically stacked NiTe₂/WS₂ heterostructures are formed by van der Waals epitaxy. Interestingly, p-type WS₂ field-effect transistors can be obtained with the hole mobility of ∼4.22 cm²/V·s, when the epitaxial NiTe₂ sheets act as the source/drain electrodes. This is attributed to the decreased FLP effect and hence the low potential barrier for holes at the van der Waals contacts. Furthermore, the photodetectors based on the heterostructures show a 2 orders of magnitude increase in the switch ratio, responsivity, and detectivity and a 1 order of magnitude increase in the rise and decay speeds relative to those based on pristine WS₂. This work paves the way to realize the p-type contact for monolayer WS₂ with significantly enhanced optoelectronic performance.

Hexagonal Single-Crystal CoS Nanosheets: Controllable Synthesis and Tunable Oxygen Evolution Performance

Cobalt-based sulfides with variable valence states and unique physical and chemical properties have shown great potential as oxygen evolution reaction (OER) catalysts for electrochemical water-splitting reactions. However, poor morphological characteristics and a small specific surface area limit its further application. Here, hexagonal single-crystal two-dimensional (2D) CoS nanosheets with different thicknesses are successfully prepared by an atmospheric-pressure chemical vapor deposition method. Because of the advantages of the 2D structure, more exposed catalytic active sites, better reactant adsorption ability, accelerated electron transfer, and enhanced electrical conductivities can be achieved from the thinnest 5 nm CoS nanosheets (CoS-5), significantly improving OER performance. The electrochemical tests manifest that CoS-5 show an overpotential of 290 mV at 10 mA cm^-2 and a Tafel slope of 65.6 mV dec^-1 in the OER in an alkaline solution, superior to those for other thicknesses of CoS, bulk CoS, and RuO₂. For the mechanistic investigation, the lowest charge transfer resistance (R_ct) and the highest double-layer capacitance (C_dl) were obtained for CoS-5, demonstrating the faster OER kinetics and the larger active area. Density functional theory calculations further reveal the enhanced density of states around the Fermi level and higher H₂O molecule adsorption energy for thinner CoS nanosheets, promoting its intrinsic catalytic activity. Moreover, the two-electrode system with CoS-5 as the anode and Pt/C as the cathode requires only 1.56 V to attain 10 mA cm^-2 in the overall water-splitting reaction. We believe that this study will provide a fresh view for thickness-dependent catalytic performance and offers a new material for the study of electronic and energy devices.

Emerging Phases of Layered Metal Chalcogenides

Layered metal chalcogenides, as a "rich" family of 2D materials, have attracted increasing research interest due to the abundant choices of materials with diverse structures and rich electronic characteristics. Although the common metal chalcogenide phases such as 2H and 1T have been intensively studied, many other unusual phases are rarely explored, and some of these show fascinating behaviors including superconductivity, ferroelectrics, ferromagnetism, etc. From this perspective, the unusual phases of metal chalcogenides and their characteristics, as well as potential applications are introduced. First, the unusual phases of metal chalcogenides from different classes, including transition metal dichalcogenides, magnetic element-based chalcogenides, and metal phosphorus chalcogenides, are discussed, respectively. Meanwhile, their excellent properties of different unusual phases are introduced. Then, the methods for producing the unusual phases are discussed, specifically, the stabilization strategies during the chemical vapor deposition process for the unusual phase growth are discussed, followed by an outlook and discussions on how to prepare the unusual phase metal dichalcogenides in terms of synthetic methodology and potential applications.

Controlled Synthesis of Ultrathin PtSe2 Nanosheets with Thickness-Tunable Electrical and Magnetoelectrical Properties

Thickness-dependent chemical and physical properties have gained tremendous interest since the emergence of two-dimensional (2D) materials. Despite attractive prospects, the thickness-controlled synthesis of ultrathin nanosheets remains an outstanding challenge. Here, a chemical vapor deposition (CVD) route is reported to controllably synthesize high-quality PtSe2 nanosheets with tunable thickness and explore their thickness-dependent electronic and magnetotransport properties. Raman spectroscopic studies demonstrate all Eg , A1 g , A2 u , and Eu modes are red shift in thicker nanosheets. Electrical measurements demonstrate the 1.7 nm thick nanosheet is a semiconductor with room temperature field-effect mobility of 66 cm2 V-1 s-1 and on/off ratio of 106 . The 2.3-3.8 nm thick nanosheets show slightly gated modulation with high field-effect mobility up to 324 cm2 V-1 s-1 at room-temperature. When the thickness is over 3.8 nm, the nanosheets show metallic behavior with conductivity and breakdown current density up to 6.8 × 105 S m-1 and 6.9 × 107 A cm-2 , respectively. Interestingly, magnetoresistance (MR) studies reveal magnetic orders exist in this intrinsically non-magnetic material system, as manifested by the thickness-dependent Kondo effect, where both metal to insulator transition and negative MR appear upon cooling. Together, these studies suggest that PtSe2 is an intriguing system for both developing novel functional electronics and conducting fundamental 2D magnetism study.

Activating the oxygen electrocatalytic activity of layer-structured Ca0.5CoO2 nanofibers by iron doping

Herein, layer-structured Ca0.5CoO2 nanofibers made of interconnected ultrathin nanoplates have been successfully synthesized by an electrospinning strategy. The OER activity of the Ca0.5CoO2 can be dramatically improved by iron doping,...

Electrochemical Capacitor Performance of Nanotextured Carbon/Transition Metal Dichalcogenides Composites

Transition metal dichalcogenides (TMDs) are emerging low-dimensional materials with potential applications for electrochemical capacitors (EC). Here, physicochemical and electrochemical characterizations of carbon composites with two sulfides ReS₂ and FeS₂ are reported. To enhance conductivity, multiwalled carbon nanotubes (NTs) serve as a support for ReS₂ while 3D graphene-like network (3DG) is utilized for FeS₂ deposition. Unique structure of carbon/TMDs composites allows a faradaic contribution of sulfides to be exploited. Capacitance values, charge/discharge efficiency, capacitance retention, charge propagation, cyclabilty, and voltage limits of EC with carbon/sulfide composites in aqueous neutral solutions (Li₂ SO₄ , Na₂ SO₄ ) are analyzed. Special attention is devoted to energetic efficiency of capacitive charge/discharge processes. Structure-to-capacitance correlation for the composites with various TMDs loading is thoroughly emphasized. The more defected structure of layered NTs/ReS₂ composite is responsible for the lower capacitor voltage (0.8 V) owing to quicker electrolyte decomposition. Additionally, the catalytic effect of Re for hydrogen evolution reaction plays a crucial role in EC voltage restriction. Contrary, the operating voltage of capacitor based on 3DG/FeS₂ is able to be extended until 1.5 V in sodium sulfate electrolytic solution.

A full gap above the Fermi level: the charge density wave of monolayer VS2

In the standard model of charge density wave (CDW) transitions, the displacement along a single phonon mode lowers the total electronic energy by creating a gap at the Fermi level, making the CDW a metal-insulator transition. Here, using scanning tunneling microscopy and spectroscopy and ab initio calculations, we show that VS2 realizes a CDW which stands out of this standard model. There is a full CDW gap residing in the unoccupied states of monolayer VS2. At the Fermi level, the CDW induces a topological metal-metal (Lifshitz) transition. Non-linear coupling of transverse and longitudinal phonons is essential for the formation of the CDW and the full gap above the Fermi level. Additionally, x-ray magnetic circular dichroism reveals the absence of net magnetization in this phase, pointing to coexisting charge and spin density waves in the ground state.

Continuous orientated growth of scaled single-crystal 2D monolayer films

Single-crystal 2D materials have attracted a boom of scientific and technological activities. Recently, chemical vapor deposition (CVD) shows great promise for the synthesis of high-quality 2D materials owing to high controllability, high scalability and ultra-low cost. Two types of strategies have been developed: one is single-seed method, which focuses on the ultimate control of the density of nucleation into only one nucleus and the other is a multi-seed approach, which concentrates on the precise engineering of orientation of nuclei into a uniform alignment. Currently, the latter is recognized as a more effective method to meet the demand of industrial production, whereas the oriented domains can seamlessly merge into a continuous single-crystal film in a short time. In this review, we present the detailed cases of growing the representative monocrystalline 2D materials via the single-seed CVD method as well as show its advantages and disadvantages in shaping 2D materials. Then, other typical 2D materials (including graphene, h-BN, and TMDs) are given in terms of the unique feature under the guideline of the multi-seed growth approach. Furthermore, the growth mechanism for the 2D single crystals is presented and the following application in electronics, optics and antioxidation coatings are also discussed. Finally, we outline the current challenges, and a bright development in the future of the continuous orientated growth of scaled 2D crystals should be envisioned.

Status and prospects of Ohmic contacts on two-dimensional semiconductors

In recent years, two-dimensional materials have received more and more attention in the development of semiconductor devices, and their practical applications in optoelectronic devices have also developed rapidly. However, there are still some factors that limit the performance of two-dimensional semiconductor material devices, and one of the most important is Ohmic contact. Here, we elaborate on a variety of approaches to achieve Ohmic contacts on two-dimensional materials and reveal their physical mechanisms. For the work function mismatch problem, we summarize the comparison of barrier heights between different metals and 2D semiconductors. We also examine different methods to solve the problem of Fermi level pinning. For the novel 2D metal-semiconductor contact methods, we analyse their effects on reducing contact resistance from two different perspectives: homojunction and heterojunction. Finally, the challenges of 2D semiconductors in achieving Ohmic contacts are outlined.

One-Step Synthesis of NbSe2/Nb-Doped-WSe2 Metal/Doped-Semiconductor van der Waals Heterostructures for Doping Controlled Ohmic Contact

van der Waals heterostructures (vdWHs) of metallic (m-) and semiconducting (s-) transition-metal dichalcogenides (TMDs) exhibit an ideal metal/semiconductor (M/S) contact in a field-effect transistor. However, in the current two-step chemical vapor deposition process, the synthesis of m-TMD on pregrown s-TMD contaminates the van der Waals (vdW) interface and hinders the doping of s-TMD. Here, NbSe₂/Nb-doped-WSe₂ metal-doped-semiconductor (M/d-S) vdWHs are created via a one-step synthesis approach using a niobium molar ratio-controlled solution-phase precursor. The one-step growth approach synthesizes Nb-doped WSe₂ with a controllable doping concentration and metal/doped-semiconductor vdWHs. The hole carrier concentration can be precisely controlled by controlling the Nb/(W + Nb) molar ratio in the precursor solution from ∼3 × 10¹¹/cm² at Nb-0% to ∼1.38 × 10¹²/cm² at Nb-60%; correspondingly, the contact resistance R_C value decreases from 10 888.78 at Nb-0% to 70.60 kΩ.μm at Nb-60%. The Schottky barrier height measurement in the Arrhenius plots of ln(I_sat/T²) versus q/K_BT demonstrated an ohmic contact in the NbSe₂/W_xNb_1-xSe₂ vdWHs. Combining p-doping in WSe₂ and M/d-S vdWHs, the mobility (27.24 cm² V^-1 s^-1) and on/off ratio (2.2 × 10⁷) are increased 1238 and 4400 times, respectively, compared to that using the Cr/pure-WSe₂ contact (0.022 cm² V^-1 s^-1 and 5 × 10³, respectively). Together, the R_C value using the NbSe₂ contact shows 2.46 kΩ.μm, which is ∼29 times lower than that of using a metal contact. This method is expected to guide the synthesis of various M/d-S vdWHs and applications in future high-performance integrated circuits.

Ultrafast, Kinetically Limited, Ambient Synthesis of Vanadium Dioxides through Laser Direct Writing on Ultrathin Chalcogenide Matrix

Vanadium dioxide (VO₂) is a strongly correlated electronic material and has attracted significant attention due to its metal-to-insulator transition and diverse smart applications. Traditional synthesis of VO₂ usually requires minutes or hours of global heating and low oxygen partial pressure to achieve thermodynamic control of the valence state. Further patterning of VO₂ through a series of lithography and etching processes may inevitably change its surface valence, which poses a great challenge for the assembly of micro- and nanoscale VO₂-based heterojunction devices. Herein, we report an ultrafast method to simultaneously synthesize and pattern VO₂ on the time scale of seconds under ambient conditions through laser direct writing on a V₅S₈ "canvas". The successful ambient synthesis of VO₂ is attributed to the ultrafast local heating and cooling process, resulting in controlled freezing of the intermediate oxidation phase during the relatively long kinetic reaction. A Mott memristor based on a V₅S₈-VO₂-V₅S₈ lateral heterostructure can be fabricated and integrated with a MoS₂ channel, delivering a transistor with abrupt switching transfer characteristics. The other device with a VS_xO_y channel exhibits a large negative temperature coefficient of approximately 4.5%/K, which is highly desirable for microbolometers. The proposed approach enables fast and efficient integration of VO₂-based heterojunction devices and is applicable to other intriguing intermediate phases of oxides.

Recent Advances in 2D Group VB Transition Metal Chalcogenides

2D materials have received considerable research interest owing to their abundant material systems and remarkable properties. Among them, 2D group VB transition metal chalcogenides (GVTMCs) stand out as emerging 2D metallic materials and significantly broaden the research scope of 2D materials. 2D GVTMCs have great advantages in electrical transport, 2D magnetism, charge density wave, sensing, catalysis, and charge storage, making them attractive in the fields of functional devices and energy chemistry. In this review, the recent progress of 2D GVTMCs is summarized systematically from fundamental properties, growth methodologies to potential applications. The challenges and prospects are also discussed for future research in this field.

Structural Defects, Mechanical Behaviors, and Properties of Two-Dimensional Materials

Since the success of monolayer graphene exfoliation, two-dimensional (2D) materials have been extensively studied due to their unique structures and unprecedented properties. Among these fascinating studies, the most predominant focus has been on their atomic structures, defects, and mechanical behaviors and properties, which serve as the basis for the practical applications of 2D materials. In this review, we first highlight the atomic structures of various 2D materials and the structural and energy features of some common defects. We then summarize the recent advances made in experimental, computational, and theoretical studies on the mechanical properties and behaviors of 2D materials. We mainly emphasized the underlying deformation and fracture mechanisms and the influences of various defects on mechanical behaviors and properties, which boost the emergence and development of topological design and defect engineering. We also further introduce the piezoelectric and flexoelectric behaviors of specific 2D materials to address the coupling between mechanical and electronic properties in 2D materials and the interactions between 2D crystals and substrates or between different 2D monolayers in heterostructures. Finally, we provide a perspective and outlook for future studies on the mechanical behaviors and properties of 2D materials.

Out-of-Plane Deformations Determined Mechanics of Vanadium Disulfide (VS2) Sheets

The rapid development of two-dimensional (2D) materials has significantly broadened the scope of 2D science in both fundamental scientific interests and emerging technological applications, wherein the mechanical properties play an indispensably key role. Nevertheless, particularly challenging is the ultrathin nature of 2D materials that makes their manipulations and characterizations considerably difficult. Herein, thanks to the excellent flexibility of vanadium disulfide (VS₂) sheets, their susceptibility to out-of-plane deformation is exploited to realize the controllable loading and enable the accurate measurements of mechanical properties. In particular, the Young's modulus is estimated to be 44.4 ± 3.5 GPa, approaching the lower limit for 2D transition metal dichalcogenides (TMDs). We further report the first measurement of thickness-dependent bending rigidity of VS₂, which deviates from the prediction of the classical continuum mechanics theory. Additionally, a deeper understanding of the mechanics within two dimensions also facilitates the modulation of strain-coupled physics at the nanoscale. Our Raman measurements showed the Grüneisen parameters for VS₂ were determined for the first time to be γ_E2g¹ ≈ 0.83 and γ_A1g ≈ 0.32.

Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition

Achieving a high-quality metal contact on two-dimensional (2D) semiconductors still remains a major challenge due to the strong Fermi level pinning and the absence of an effective doping method. Here, we demonstrate high performance "all-PtSe₂" field-effect transistors (FETs) completely free from those issues, enabled by the vertical integration of a metallic thick PtSe₂ source/drain onto the semiconducting ultrathin PtSe₂ channel. Owing to its inherent thickness-dependent semiconductor-to-metal phase transition, the transferred metallic PtSe₂ transforms the underlying semiconducting PtSe₂ into metal at the junction. Therefore, a fully metallized source/drain and semiconducting channel could be realized within the same PtSe₂ platform. The ultrathin PtSe₂ FETs with PtSe₂ vdW contact exhibits excellent gate tunability, superior mobility, and high ON current accompanied by one order lower contact resistance compared to conventional Ti/Au contact FETs. Our work provides a new device paradigm with a low resistance PtSe₂ vdW contact which can overcome a fundamental bottleneck in 2D nanoelectronics.

Effect of the Titanium Self-Intercalation on the Electronic Structure of TiSe2

The effect of the superstoichiometric Ti intercalation on the electronic structure of TiSe₂ was studied by using X-ray photoelectron spectroscopy in nonresonant and resonant modes along with the DOS (density of states) calculations. It was shown that the presence of the Ti atoms in the interlayer space leads to the formation of the Ti 3d_z²/Ti 3d_z² hybridized band between the Ti atoms in the regular lattice positions and Ti atoms in the interlayer space. The charge transfer to the conduction band was not observed in this case.

Vanadium disulfide for ultrafast photonic application

The investigation of two-dimensional (2D) nonlinear optical materials offers a promising way to construct the high-performance optical devices in fundamental and industrial applications because of their rich distinct optoelectronic properties. Herein, by utilizing the liquid exfoliation method, vanadium disulfide (VS₂) nanosheets are prepared and the thickness is measured to be 3.16 nm. In addition, we have fabricated the VS₂-based optical device and the nonlinear optical property is characterized with modulation depth of 23.97%. By using VS₂ as saturable absorber, a high stable passively mode-locking Er-doped fiber laser is obtained with pulse duration of 169 fs and the largest average output power of 70.5 mW. The slope efficiency is up to 7.9%. In comparison to recent results of mode-locking fiber lasers with 2D materials, the VS₂-based fiber laser demonstrates better performance. To the best of our knowledge, this is the first example of using VS₂ for generating femtosecond mode-locked laser pulse. Our experimental results not only reveal VS₂ ultrafast photonics application, but also advance the high-performance applications for information science and nonlinear optics.