Plasmonic Hot Carriers-Controlled Second Harmonic Generation in WSe2 Bilayers

Plasmon-Induced Hot Electrons in Nanostructured Materials: Generation, Collection, and Application to Photochemistry

Plasmon refers to the coherent oscillation of all conduction-band electrons in a nanostructure made of a metal or a heavily doped semiconductor. Upon excitation, the plasmon can decay through different channels, including nonradiative Landau damping for the generation of plasmon-induced energetic carriers, the so-called hot electrons and holes. The energetic carriers can be collected by transferring to a functional material situated next to the plasmonic component in a hybrid configuration to facilitate a range of photochemical processes for energy or chemical conversion. This article centers on the recent advancement in generating and utilizing plasmon-induced hot electrons in a rich variety of hybrid nanostructures. After a brief introduction to the fundamentals of hot-electron generation and decay in plasmonic nanocrystals, we extensively discuss how to collect the hot electrons with various types of functional materials. With a focus on plasmonic nanocrystals made of metals, we also briefly examine those based upon heavily doped semiconductors. Finally, we illustrate how site-selected growth can be leveraged for the rational fabrication of different types of hybrid nanostructures, with an emphasis on the parameters that can be experimentally controlled to tailor the properties for various applications.

Toward Complete All-Optical Intensity Modulation of High-Harmonic Generation from Solids

Optical modulation of high-harmonics generation in solids enables the detection of material properties, such as the band structure, and promising new applications, such as super-resolution imaging in semiconductors. Various recent studies have shown optical modulation of high-harmonics generation in solids, in particular, suppression of high-harmonics generation has been observed by synchronized or delayed multipulse sequences. Here we provide an overview of the underlying mechanisms attributed to this suppression and provide a perspective on the challenges and opportunities regarding these mechanisms. All-optical control of high-harmonic generation allows for femtosecond, and in the future possibly subfemtosecond, switching, which has numerous possible applications: These range from super-resolution microscopy to nanoscale controlled chemistry and highly tunable nonlinear light sources.

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.

Extraordinary Polarization and Thickness Dependences of Photocarrier Dynamics in PdSe2 Ribbons

Pentagonal palladium diselenide (PdSe2) stands out for its exceptional optoelectronic properties, including high carrier mobility, tunable bandgap, and anisotropic electronic and optical responses. Herein, we systematically investigate photocarrier dynamics in PdSe2 ribbons using polarization-resolved optical pump-probe spectroscopy. In thin PdSe2 ribbons with a semiconductor phase, the photocarrier dynamics are found to be dominated by intraband hot-carrier cooling, interband recombination, and the exciton effect, showing weak crystalline orientation dependences. Conversely, in thick semimetal-phase PdSe2 ribbons, the photocarrier relaxations governed by the electron-optical/acoustic phonon scattering strongly depend on the sample orientation, albeit with a degradation in in-plane anisotropy following hot-carrier cooling. Furthermore, we analyze the correlations between photocarrier dynamics and anisotropic energy dispersions of electronic structures across a wide range in k space, as well as the contributions from the anisotropic electron-phonon couplings. Our study provides crucial insights for developing polarization-sensitive photoelectronic devices based on PdSe2.

Exciton-Sensitized Second-Harmonic Generation in 2D Heterostructures

The efficient optical second-harmonic generation (SHG) of two-dimensional (2D) crystals, coupled with their atomic thickness, which circumvents the phase-match problem, has garnered considerable attention. While various 2D heterostructures have shown promising applications in photodetectors, switching electronics, and photovoltaics, the modulation of nonlinear optical properties in such heterosystems remains unexplored. In this study, we investigate exciton-sensitized SHG in heterobilayers of transition metal dichalcogenides (TMDs), where photoexcitation of one donor layer enhances the SHG response of the other as an acceptor. We utilize polarization-resolved interferometry to detect the SHG intensity and phase of each individual layer, revealing the energetic match between the excitonic resonances of donors and the SHG enhancement of acceptors for four TMD combinations. Our results also uncover the dynamic nature of interlayer coupling, as made evident by the dependence of sensitization on interlayer gap spacing and the average power of the fundamental beam. This work provides insights into how the interlayer coupling of two different layers can modify nonlinear optical phenomena in 2D heterostructures.

Nonclassical Mechanism of Metal-Enhanced Photoluminescence of Quantum Dots

Metal-enhanced photoluminescence is able to provide a robust signal even from a single emitter and is promising in applications in biosensors and optoelectronic devices. However, its realization with semiconductor nanocrystals (e.g., quantum dots, QDs) is not always straightforward due to the hidden and not fully described interactions between plasmonic nanoparticles and an emitter. Here, we demonstrate nonclassical enhancement (i.e., not a conventional electromagnetic mechanism) of the QD photoluminescence at nonplasmonic conditions and correlate it with the charge exchange processes in the system, particularly with high efficiency of the hot-hole generation in gold nanoparticles and the possibility of their transfer to QDs. The hole injection returns a QD from a charged nonemitting state caused by hole trapping by surface and/or interfacial traps into an uncharged emitting state, which leads to an increased photoluminescence intensity. These results open new insights into metal-enhanced photoluminescence, showing the importance of the QD surface states in this process.

Nonlinear Optical Properties from Engineered 2D Materials

Two-dimensional (2D) materials with atomic thickness, tunable light-matter interaction, and significant nonlinear susceptibility are emerging as potential candidates for new-generation optoelectronic devices. In this review, we briefly cover the recent research development of typical nonlinear optic (NLO) processes including second harmonic generation (SHG), third harmonic generation (THG), as well as two-photon photoluminescence (2PPL) of 2D materials. Nonlinear light-matter interaction in atomically thin 2D materials is important for both fundamental research and future optoelectronic devices. The NLO performance of 2D materials can be greatly modulated with methods such as carrier injection tuning, strain tuning, artificially stacking, as well as plasmonic resonant enhancement. This review will discuss various nonlinear optical processes and corresponding tuning methods and propose its potential NLO application of 2D materials.

All-optical generation of static electric field in a single metal-semiconductor nanoantenna

Electric field is a powerful instrument in nanoscale engineering, providing wide functionalities for control in various optical and solid-state nanodevices. The development of a single optically resonant nanostructure operating with a charge-induced electrical field is challenging, but it could be extremely useful for novel nanophotonic horizons. Here, we show a resonant metal-semiconductor nanostructure with a static electric field created at the interface between its components by charge carriers generated via femtosecond laser irradiation. We study this field experimentally, probing it by second-harmonic generation signal, which, in our system, is time-dependent and has a non-quadratic signal/excitation power dependence. The developed numerical models reveal the influence of the optically induced static electric field on the second harmonic generation signal. We also show how metal work function and silicon surface defect density for different charge carrier concentrations affect the formation of this field. We estimate the value of optically-generated static electric field in this nanoantenna to achieve ≈108V/m. These findings pave the way for the creation of nanoantenna-based optical memory, programmable logic and neuromorphic devices.

Trends in energy and charge transfer in 2D and integrated perovskite heterostructures

Two-dimensional (2D) van der Waals (vdW) heterostructured transition metal dichalcogenides (TMDs) open up new possibilities for a wide range of optoelectronic applications. Interlayer couplings are responsible for several fascinating physics phenomena, which are in addition to the multifunctionalities that have been discovered in the field of optoelectronics. These couplings can influence the overall charge, or the energy transfer processes via stacking, separation, and dielectric angles. This focused review article summarizes the most recent and promising strategies for interlayer exciton emission in 2D or integrated perovskites and TMD heterostructures. These types of devices require a thorough comprehension and effective control of interlayer couplings in order to realize their functionalities and improve performance, which is demonstrated in this article with the energy or charge transfer mechanisms in the individual devices. An ideal platform for examining the interlayer coupling and the related physical processes is provided by a summary of the recent research findings in 2D perovskites and TMDs. Furthermore, it would encourage more investigation into the comprehension and regulation of excitonic effects and the related optoelectronic applications in vdW heterostructures over a broad spectral response range. Finally, the current challenges and prospects are summarized in this paper.

Directional Damping of Plasmons at Metal-Semiconductor Interfaces

ConspectusOver the past decade, it has been shown that surface plasmons can enhance photoelectric conversion in photovoltaics, photocatalysis, and other optoelectronic applications through their plasmonic absorption and damping processes. However, plasmonically enhanced devices have yet to routinely match or exceed the efficiencies of traditional semiconductor devices. The effect of plasmonic losses dissipates the absorbed photoenergy mostly into heat and that has hampered the realization of superior next-generation plasmonic optoelectronic devices. Several approaches are being explored to alleviate this situation, including using gain to compensate for the plasmonic losses, designing and synthesizing alternative low-loss plasmonic materials, and reducing activation barriers in plasmonic devices and physical thicknesses of photoabsorber layers to lower the plasmonic losses. A newly proposed plasmon-induced interfacial charge-transfer transition (PIICTT) mechanism has proven to be effective in minimizing energy loss during interfacial charge transfer. The PIICTT leads to a damping of metallic plasmonics by directly generating excitons at the plasmonic metal/semiconductor heteronanostructures. This novel concept has been proven to overcome some of the limitations of electron-transfer inefficiencies, renewing a focus on surface plasmon damping processes with the goal that the plasmonic excitation energies of metal nanoparticles can be more efficiently transferred to the adjacent semiconductor components in the absence and presence of an effective interlayer of carrier-selective blocking layer (CSBL). Several theoretical and experimental studies have concluded that efficient plasmon-induced ultrafast hot-carrier transfer was observed in plasmonic-metal/semiconductor heteronanostructures. The PIICTT mechanism may well be a general phenomenon at plasmonic metal/semiconductor, metal/molecule, semiconductor/semiconductor, and semiconductor/molecule heterointerfaces. Thus, the PIICTT presents a new opportunity to limit energy loss in plasmonic-metal nanostructures and increase device efficiencies based on plasmonic coupling. The nonradiative damping of surface plasmons can impact the energy flux direction and thereby provide a new process beyond light trapping, focusing, and hot carrier creation.In this Account, we draw much attention to the benefits of interfacial plasmonic coupling, highlighting recent pioneering discoveries in which plasmon-induced interfacial charge- and energy-transfer processes enable the generation of hot charge carriers near the plasmonic-metal/semiconductor interfaces. This process is likely to increase the photoelectric conversion efficiency, constituting "plasmonic enhancement". We also discuss recent advances in the dynamics of surface plasmon relaxation and highlight exciting new possibilities for plasmonic metals and their interactions with strongly attached semiconductors to provide directional energy fluxes. While this new research area comes on the heels of much elaborate research on both metal and semiconductor nanomaterials, it provides a subtle but important refinement in understanding the optoelectronic properties of materials with far-reaching consequences from fundamental interface science to technological applications. We hope that this Account will contribute to a more systematic description of interface-coupled plasmonics, both fundamentally and in terms of applications toward the design of plasmonic heterostructured devices.

Enhanced light-matter interaction in two-dimensional transition metal dichalcogenides

Two-dimensional (2D) transition metal dichalcogenide (TMDC) materials, such as MoS₂, WS₂, MoSe₂, and WSe₂, have received extensive attention in the past decade due to their extraordinary electronic, optical and thermal properties. They evolve from indirect bandgap semiconductors to direct bandgap semiconductors while their layer number is reduced from a few layers to a monolayer limit. Consequently, there is strong photoluminescence in a monolayer (1L) TMDC due to the large quantum yield. Moreover, such monolayer semiconductors have two other exciting properties: large binding energy of excitons and valley polarization. These properties make them become ideal materials for various electronic, photonic and optoelectronic devices. However, their performance is limited by the relatively weak light-matter interactions due to their atomically thin form factor. Resonant nanophotonic structures provide a viable way to address this issue and enhance light-matter interactions in 2D TMDCs. Here, we provide an overview of this research area, showcasing relevant applications, including exotic light emission, absorption and scattering features. We start by overviewing the concept of excitons in 1L-TMDC and the fundamental theory of cavity-enhanced emission, followed by a discussion on the recent progress of enhanced light emission, strong coupling and valleytronics. The atomically thin nature of 1L-TMDC enables a broad range of ways to tune its electric and optical properties. Thus, we continue by reviewing advances in TMDC-based tunable photonic devices. Next, we survey the recent progress in enhanced light absorption over narrow and broad bandwidths using 1L or few-layer TMDCs, and their applications for photovoltaics and photodetectors. We also review recent efforts of engineering light scattering, e.g., inducing Fano resonances, wavefront engineering in 1L or few-layer TMDCs by either integrating resonant structures, such as plasmonic/Mie resonant metasurfaces, or directly patterning monolayer/few layers TMDCs. We then overview the intriguing physical properties of different van der Waals heterostructures, and their applications in optoelectronic and photonic devices. Finally, we draw our opinion on potential opportunities and challenges in this rapidly developing field of research.

Tunable Lifetime and Nonlinearity in Two Dimensional Materials Plasmonic-Photonic Absorber

We investigate a framework of local field, quality factor and lifetime for tunable graphene nanoribbon plasmonic-photonic absorbers and study the second order and third order nonlinear optical response of surface plasmons. The energy exchange of plasmonic-photonic absorber occurs in two main ways: one way is the decay process of intrinsic loss for each resonant mode and another is the decay process of energy loss between graphene surface plasmon (GSP) mode and the external light field. The quality factor and lifetime of the plasmonic-photonic absorber can be obtained with using the coupled mode theory (CMT) and finite difference time domain (FDTD) method, which are effectively tunable with changing Fermi energy, carrier mobility and superstrate refractive index. The evolutions of total energy and lifetime of GSP are also shown, which are helpful for the study of micro processes in a two-dimensional material plasmonic-photonic absorber. The strongly localized fundamental field induces a desired increase of second harmonic (SH) wave and third harmonic (TH) wave. The manipulation of the quality factor and lifetime of the GSP makes graphene an excellent platform for tunable two-dimensional material plasmonic-photonic devices to realize the active control of the photoelectric/photothermal energy conversion process and higher harmonic generation.

Anisotropic Second-Harmonic Generation Induced by Reduction of In-Plane Symmetry in 2D Materials with Strain Engineering

Strain engineering is an attractive method to induce and control anisotropy for polarized optoelectronic applications with two-dimensional (2D) materials. Herein, we have investigated the nonlinear optical coefficient dispersion relationship and the second-harmonic generation (SHG) pattern evolution under the uniaxial strains for graphene, WS₂, GaSe, and In₂Se₃ monolayers. The uniaxial strain can break the in-plane symmetry of 2D materials, leading to both trade-off breaking of the nonlinear coefficient and new emergent nonlinear coefficients. In such a case, a classical sixfold ϕ-dependent SHG pattern is transformed into a distorted sixfold SHG pattern under the strain. Due to the lattice symmetry breaking and the uneven charge density distribution in strained 2D materials, the SHG patterns also depend on the excitation photon energy. The results could give a guide for the SHG pattern analysis in experiments, suggesting strain engineering on 2D materials for the tunable anisotropy in polarized and flexible nonlinear optical devices.

Approaching the intrinsic exciton physics limit in two-dimensional semiconductor diodes

Two-dimensional (2D) semiconductors have attracted intense interest for their unique photophysical properties, including large exciton binding energies and strong gate tunability, which arise from their reduced dimensionality^1-5. Despite considerable efforts, a disconnect persists between the fundamental photophysics in pristine 2D semiconductors and the practical device performances, which are often plagued by many extrinsic factors, including chemical disorder at the semiconductor-contact interface. Here, by using van der Waals contacts with minimal interfacial disorder, we suppress contact-induced Shockley-Read-Hall recombination and realize nearly intrinsic photophysics-dictated device performance in 2D semiconductor diodes. Using an electrostatic field in a split-gate geometry to independently modulate electron and hole doping in tungsten diselenide diodes, we discover an unusual peak in the short-circuit photocurrent at low charge densities. Time-resolved photoluminescence reveals a substantial decrease of the exciton lifetime from around 800 picoseconds in the charge-neutral regime to around 50 picoseconds at high doping densities owing to increased exciton-charge Auger recombination. Taken together, we show that an exciton-diffusion-limited model well explains the charge-density-dependent short-circuit photocurrent, a result further confirmed by scanning photocurrent microscopy. We thus demonstrate the fundamental role of exciton diffusion and two-body exciton-charge Auger recombination in 2D devices and highlight that the intrinsic photophysics of 2D semiconductors can be used to create more efficient optoelectronic devices.

Giant All-Optical Modulation of Second-Harmonic Generation Mediated by Dark Excitons

All-optical control of nonlinear photonic processes in nanomaterials is of significant interest from a fundamental viewpoint and with regard to applications ranging from ultrafast data processing to spectroscopy and quantum technology. However, these applications rely on a high degree of control over the nonlinear response, which still remains elusive. Here, we demonstrate giant and broadband all-optical ultrafast modulation of second-harmonic generation (SHG) in monolayer transition-metal dichalcogenides mediated by the modified excitonic oscillation strength produced upon optical pumping. We reveal a dominant role of dark excitons to enhance SHG by up to a factor of ∼386 at room temperature, 2 orders of magnitude larger than the current state-of-the-art all-optical modulation results. The amplitude and sign of the observed SHG modulation can be adjusted over a broad spectral range spanning a few electronvolts with ultrafast response down to the sub-picosecond scale via different carrier dynamics. Our results not only introduce an efficient method to study intriguing exciton dynamics, but also reveal a new mechanism involving dark excitons to regulate all-optical nonlinear photonics.

Broadband Plasmon-Enhanced Four-Wave Mixing in Monolayer MoS2

Two-dimensional transition-metal dichalcogenide monolayers have remarkably large optical nonlinearity. However, the nonlinear optical conversion efficiency in monolayer transition-metal dichalcogenides is typically low due to small light-matter interaction length at the atomic thickness, which significantly obstructs their applications. Here, for the first time, we report broadband (up to ∼150 nm) enhancement of optical nonlinearity in monolayer MoS₂ with plasmonic structures. Substantial enhancement of four-wave mixing is demonstrated with the enhancement factor up to three orders of magnitude for broadband frequency conversion, covering the major visible spectral region. The equivalent third-order nonlinearity of the hybrid MoS₂-plasmonic structure is in the order of 10^-17 m²/V², far superior (∼10-100-times larger) to the widely used conventional bulk materials (e.g., LiNbO₃, BBO) and nanomaterials (e.g., gold nanofilms). Such a considerable and broadband enhancement arises from the strongly confined electric field in the plasmonic structure, promising for numerous nonlinear photonic applications of two-dimensional materials.

Cooling and diffusion characteristics of a hot carrier in the monolayer WS2

The characteristics of a hot carrier distributed in the C excitonic state of the monolayer WS₂ is investigated by exploiting the transient absorption (TA) spectroscopy. The hot carrier cooling lifetime gradually prolongs from 0.58 ps to 2.68 ps with the absorbed photon flux owing to the hot phonon bottleneck effect, as the excitation photon energy is 2.03 eV. Meanwhile, the normalized TA spectra shows that the spectral feature of hot carriers is different from that of normal carriers. Based on the modified Lennard-Jones model, the average distance among hot carriers can be estimated according to the peak shift of TA spectra and the diffusion velocity can also be calculated simultaneously. The hot carrier limits the diffusion of the photo-generated carrier at the initial several picoseconds. These results help people to elucidate the hot carrier dynamics in 2D TMDCs and give guidance on the designing and optimizing the TMDC-based electronic devices of high performance.

Investigation of Hot Carrier Cooling Dynamics in Monolayer MoS2

The hot carrier cooling dynamics in the C-excitonic state of monolayer MoS₂ is slowed down by the hot phonon bottleneck and Auger heating effects, as exploited by ultrafast transient absorption spectroscopy. The hot carrier cooling process, determined by the hot phonon bottleneck, can be prolonged through rising the excitation photon energy or increasing the absorbed photon flux. By inducing the Auger heating effect under higher absorbed photon flux, the hot carrier lifetime also increases at the low excitation photon energy. When these two effects are combined under higher excitation photon energy and higher absorbed photon flux, the hot phonon bottleneck is gradually weakened because of Auger recombination. In addition, the similar hot carrier phenomenon can be observed in A/B excitonic states owing to the same physical mechanism. Our work establishes a solid photophysics foundation for 2D transition-metal dichalcogenide applications in advanced energy conversion, optical quantum communication, quantum technology, etc.

Multistate Memory Enabled by Interface Engineering Based on Multilayer Tungsten Diselenide

The diversification of data types and the explosive increase of data size in the information era continuously required to miniaturize the memory devices with high data storage capability. Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising candidates for flexible and transparent electronic and optoelectronic devices with high integration density. Multistate memory devices based on TMDs could possess high data storage capability with a large integration density and thus exhibit great potential applications in the field of data storage. Here, we report the multistate data storage based on multilayer tungsten diselenide (WSe₂) transistors by interface engineering. The multiple resistance states of the WSe₂ transistors are achieved by applying different gate voltage pulses, and the switching ratio of the memory can be as large as 10⁵ with high cycling endurance. The water and oxygen molecules (H₂O/O₂) trapped at the interface between the SiO₂ substrate and WSe₂ introduce the trap states and thus the large hysteresis of the transfer curves, which leads to the multistate data storage. In addition, the laminated Au thin film electrodes make the contact interface between the electrodes and WSe₂ free of dangling bond and Fermi level pinning, thus giving rise to the excellent performance of memory devices. Importantly, the interface trap states can be easily controlled by a simple oxygen plasma treatment of the SiO₂ substrate, and subsequently, the performance of the multistate memory devices can be manipulated. Our findings provide a simple and efficient strategy to engineer the interface states for the multistate data storage applications and would motivate more investigations on the trap state-associated applications.

Nanoaperture fabrication in ultra-smooth single-grain gold films with helium ion beam lithography

We demonstrate a simple three-step gold thin-film sample preparation process to enhance the morphology and lithographic precision using helium ion based direct-writing. The procedure includes metal deposition, heat treatment and template stripping, which produce smooth monocrystalline gold grains with sizes up to 500 nm and an average surface roughness of 0.267 nm. By using a helium ion microscope, we can fabricate structures with feature sizes less than 20 nm in a 100 nm thick gold film with high-quality sidewalls. We demonstrate the efficacy of this technique by producing high-quality double nanohole (DNH) nanoapertures for single nanoparticle trapping in a single grain of 100 nm thick gold. This procedure can be applied to a wide range of antenna geometries and features that need to be fabricated producing optical and or electronic devices.

Trion-Mediated Förster Resonance Energy Transfer and Optical Gating Effect in WS2/hBN/MoSe2 Heterojunction

van der Waals two-dimensional layered heterostructures have recently emerged as a platform, where the interlayer couplings give rise to interesting physics and multifunctionalities in optoelectronics. Such couplings can be rationally controlled by dielectric, separation, and stacking angles, which affect the overall charge or energy-transfer processes, and emergent potential landscape for twistronics. Herein, we report the efficient Förster resonance energy transfer (FRET) in WS₂/hBN/MoSe₂ heterostructure, probed by both steady-state and time-resolved optical spectroscopy. We clarified the evolution behavior of the electron-hole pairs and free electrons from the trions, that is, ∼59.9% of the electron-hole pairs could transfer into MoSe₂ by FRET channels (∼38 ps) while the free electrons accumulate at the WS₂/hBN interface to photogate MoSe₂. This study presents a clear picture of the FRET process in two-dimensional transition-metal dichalcogenides' heterojunctions, which establishes the scientific foundation for developing the related heterojunction optoelectronic devices.

Ultrafast Hot Carrier Injection in Au/GaN: The Role of Band Bending and the Interface Band Structure

Plasmon photochemistry can potentially play a significant role in photocatalysis. To realize this potential, it is critical to enhance the plasmon excited hot carrier transfer and collection. However, the lack of atomistic understanding of the carrier transfer across the interface, especially when the carrier is still "hot", makes it challenging to design a more efficient system. In this work, we apply the nonadiabatic molecular dynamics simulation to study hot carrier dynamics in the system of a Au nanocluster on top of a GaN surface. By setting up the initial excited hole in Au, the carrier transfer from Au to GaN is found to be on a subpicosecond time scale. The hot hole first cools to the band edge of Au d-states while it transfers to GaN. After the hole has cooled down to the band edge of GaN, we find that some of the charges can return back to Au. By applying different external potentials to mimic the Schottky barrier band bending, the returning charge can be reduced, demonstrating the importance of the internal electric field. Finally, with the understanding of the carrier transfer's pathway, we suggest that a ZnO layer between GaN and Au can effectively block the "cold" carrier from returning back to Au but still allow the hot carrier to transfer from Au to GaN.

Ultrafast nonlinear absorption enhancement of monolayer MoS2 with plasmonic Au nanoantennas

In this work, we experimentally study the nonlinear absorption enhancement of saturable absorption and two-photon absorption on a hybrid structure comprising a monolayer MoS₂ and Au nanoantennas via femtosecond I-scan measurement. Specifically, a 13-fold increment in the linear absorption coefficient is attained at 1.85 eV, along with an 8-fold enhancement of the two-photon absorption coefficient at 1.65 eV, which is attributed to exciton-plasmon coupling resonance and plasmonic hot electron transfer. The exciton-plasmon coupling effect is characterized by stable photoluminescence experiments. Furthermore, the exciton recombination time is extracted from the pump-probe measurement, whose value in the hybrid structure is shortened from 18.5 ps (pure MoS₂) to 1.84 ps. Our findings facilitate a new perspective to modulate the nonlinear optical response and to promote the performance of nonlinear photonic devices.

Coexistence of Different Charge-Transfer Mechanisms in the Hot-Carrier Dynamics of Hybrid Plasmonic Nanomaterials

Hot-carrier dynamics at the interfaces of semiconductors and nanoclusters is of significant importance for photovoltaic and photocatalytic applications. Plasmon-driven charge separation processes are considered to be only dependent on the type of donor-acceptor interactions, that is, the conventional hot-electron-transfer mechanism for van der Waals interactions and the plasmon-induced interfacial charge-transfer transition mechanism for chemical bonds. Here, we demonstrate that the two mechanisms can coexist in a nanoparticle-semiconductor hybrid nanomaterial, both leading to faster transfer than carrier relaxation. The origin of the two mechanisms is attributed to the spatial polarization of the excited hot carriers, where the longitudinal state couples to semiconductors more strongly than the transverse state. Our findings provide a new insight into the photoinduced carrier dynamics, which is relevant for many applications in solar energy conversion, including efficient water splitting, photocatalysis, and photovoltaics.

Nonlinear Optical Response in Graphene/WX2 (X = S, Se, and Te) van der Waals Heterostructures

Light-frequency conversion based on two-dimensional (2D) materials is of great importance for modern nano- and integrated photonics. Herein, we report both the intrinsic (from the pure WX₂ (X = S, Se, and Te)) and extrinsic (from the interface of graphene/WX₂) second-order nonlinear coefficient tensor from graphene/WX₂ van der Waals (vdW) heterostructures by first-principles calculations. The prominent peaks in the dispersion relation of the intrinsic second-order nonlinear coefficient in monolayer WX₂ are due to the Van Hove singularity in the high-symmetry point or along the high-symmetry line with high joint density of states. The enhanced nonlinear optical response in the infrared band can be achieved in graphene/WS₂ vdW heterostructures, resulting from the interlayer charge transfer between graphene and WS₂. The value of the intrinsic second-order nonlinear coefficients of graphene/WSe₂ vdW heterostructures is 1.5 times larger than that of pure monolayer WSe₂ at the band gap energy of monolayer WSe₂ because of the enhanced carrier generation after the heterostructure formation. Different from pure monolayer WX₂, azimuthal angle-dependent second harmonic generation from graphene/WX₂ vdW heterostructures exhibits extraordinary rotational symmetry at different photon energies, which can be used to deduce the extrinsic second-order nonlinear coefficient. These results pave the way for the nonlinear optical coefficient design based on 2D heterostructures for nonlinear nanophotonics and integrated devices.

Universal Imaging of Full Strain Tensor in 2D Crystals with Third-Harmonic Generation

Quantitatively mapping and monitoring the strain distribution in 2D materials is essential for their physical understanding and function engineering. Optical characterization methods are always appealing due to unique noninvasion and high-throughput advantages. However, all currently available optical spectroscopic techniques have application limitation, e.g., photoluminescence spectroscopy is for direct-bandgap semiconducting materials, Raman spectroscopy is for ones with Raman-active and strain-sensitive phonon modes, and second-harmonic generation spectroscopy is only for noncentrosymmetric ones. Here, a universal methodology to measure the full strain tensor in any 2D crystalline material by polarization-dependent third-harmonic generation is reported. This technique utilizes the third-order nonlinear optical response being a universal property in 2D crystals and the nonlinear susceptibility has a one-to-one correspondence to strain tensor via a photoelastic tensor. The photoelastic tensor of both a noncentrosymmetric D_3h WS₂ monolayer and a centrosymmetric D_3d WS₂ bilayer is successfully determined, and the strain tensor distribution in homogenously strained and randomly strained monolayer WS₂ is further mapped. In addition, an atlas of photoelastic tensors to monitor the strain distribution in 2D materials belonging to all 32 crystallographic point groups is provided. This universal characterization on strain tensor should facilitate new functionality designs and accelerate device applications in 2D-materials-based electronic, optoelectronic, and photovoltaic devices.

Enhanced Second Harmonic Generation from Ferroelectric HfO2-Based Hybrid Metasurfaces

Integrated nonlinear metasurfaces leading to high-efficiency optical second harmonic generation (SHG) are highly desirable for optical sensing, imaging, and quantum photonic systems. Compared to traditional metal-only metasurfaces, their hybrid counterparts, where a noncentrosymmetric nonlinear photonic material is incorporated in the near-field of a metasurface, can significantly boost SHG efficiency. However, it is difficult to integrate such devices on-chip due to material incompatibilities, thickness scaling challenges, and the narrow band gaps of nonlinear optical materials. Here, we demonstrate significantly enhanced SHG in on-chip integrated metasurfaces by using nanometer thin films of ferroelectric Y:HfO₂. This material has the merit of CMOS compatibility, ultraviolet transparency up to 250 nm, and significant scalability down to sub-10 nm when deposited on silicon. We observe a 20-fold magnitude enhancement of the SHG intensity from the hybrid metasurface compared to a bare ferroelectric HfO₂ thin film. Moreover, a 3-fold SHG enhancement is observed from the hybrid metasurface compared to a control structure using nonferroelectric HfO₂, demonstrating a major contribution to the SHG signal from ferroelectric Y:HfO₂. The effective second-order nonlinear optical coefficient χ⁽²⁾ of Y:HfO₂ is determined to be 6.0 ± 0.5 pm/V, which is comparable to other complex nonlinear photonic oxide materials. Our work provides a general pathway to build an efficient on-chip nanophotonic nonlinear light source for SHG using ferroelectric HfO₂ thin films.

Direct observation of ultrafast plasmonic hot electron transfer in the strong coupling regime

Achieving strong coupling between plasmonic oscillators can significantly modulate their intrinsic optical properties. Here, we report the direct observation of ultrafast plasmonic hot electron transfer from an Au grating array to an MoS₂ monolayer in the strong coupling regime between localized surface plasmons (LSPs) and surface plasmon polaritons (SPPs). By means of femtosecond pump-probe spectroscopy, the measured hot electron transfer time is approximately 40 fs with a maximum external quantum yield of 1.65%. Our results suggest that strong coupling between LSPs and SPPs has synergetic effects on the generation of plasmonic hot carriers, where SPPs with a unique nonradiative feature can act as an 'energy recycle bin' to reuse the radiative energy of LSPs and contribute to hot carrier generation. Coherent energy exchange between plasmonic modes in the strong coupling regime can further enhance the vertical electric field and promote the transfer of hot electrons between the Au grating and the MoS₂ monolayer. Our proposed plasmonic strong coupling configuration overcomes the challenge associated with utilizing hot carriers and is instructive in terms of improving the performance of plasmonic opto-electronic devices.