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Hou Y, Zhou J, Xue M, Yu M, Han Y, Zhang Z, Lu Y. Strain Engineering of Twisted Bilayer Graphene: The Rise of Strain-Twistronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311185. [PMID: 38616775 DOI: 10.1002/smll.202311185] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2023] [Revised: 03/24/2024] [Indexed: 04/16/2024]
Abstract
The layer-by-layer stacked van der Waals structures (termed vdW hetero/homostructures) offer a new paradigm for materials design-their physical properties can be tuned by the vertical stacking sequence as well as by adding a mechanical twist, stretch, and hydrostatic pressure to the atomic structure. In particular, simple twisting and stacking of two layers of graphene can form a uniform and ordered Moiré superlattice, which can effectively modulate the electrons of graphene layers and lead to the discovery of unconventional superconductivity and strong correlations. However, the twist angle of twisted bilayer graphene (tBLG) is almost unchangeable once the interlayer stacking is determined, while applying mechanical elastic strain provides an alternative way to deeply regulate the electronic structure by controlling the lattice spacing and symmetry. In this review, diverse experimental advances are introduced in straining tBLG by in-plane and out-of-plane modes, followed by the characterizations and calculations toward quantitatively tuning the strain-engineered electronic structures. It is further discussed that the structural relaxation in strained Moiré superlattice and its influence on electronic structures. Finally, the conclusion entails prospects for opportunities of strained twisted 2D materials, discussions on existing challenges, and an outlook on the intriguing emerging field, namely "strain-twistronics".
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Affiliation(s)
- Yuan Hou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Minmin Xue
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Maolin Yu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Ying Han
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Yang Lu
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, Hong Kong SAR, 999077, China
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2
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Fan X, Moreno-Garcia D, Ding J, Gylfason KB, Villanueva LG, Niklaus F. Resonant Transducers Consisting of Graphene Ribbons with Attached Proof Masses for NEMS Sensors. ACS APPLIED NANO MATERIALS 2024; 7:102-109. [PMID: 38229663 PMCID: PMC10788872 DOI: 10.1021/acsanm.3c03642] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/05/2023] [Revised: 11/02/2023] [Accepted: 11/09/2023] [Indexed: 01/18/2024]
Abstract
The unique mechanical and electrical properties of graphene make it an exciting material for nanoelectromechanical systems (NEMS). NEMS resonators with graphene springs facilitate studies of graphene's fundamental material characteristics and thus enable innovative device concepts for applications such as sensors. Here, we demonstrate resonant transducers with ribbon-springs made of double-layer graphene and proof masses made of silicon and study their nonlinear mechanics at resonance both in air and in vacuum by laser Doppler vibrometry. Surprisingly, we observe spring-stiffening and spring-softening at resonance, depending on the graphene spring designs. The measured quality factors of the resonators in a vacuum are between 150 and 350. These results pave the way for a class of ultraminiaturized nanomechanical sensors such as accelerometers by contributing to the understanding of the dynamics of transducers based on graphene ribbons with an attached proof mass.
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Affiliation(s)
- Xuge Fan
- Advanced
Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing 100081, China
- Division
of Micro and Nanosystems, School of Electrical Engineering and Computer
Science, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
| | - Daniel Moreno-Garcia
- Advanced
NEMS Group, École Polytechnique Fédérale
de Lausanne (EPFL), 1015 Lausanne, Switzerland
| | - Jie Ding
- School
of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
| | - Kristinn B. Gylfason
- Division
of Micro and Nanosystems, School of Electrical Engineering and Computer
Science, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
| | | | - Frank Niklaus
- Division
of Micro and Nanosystems, School of Electrical Engineering and Computer
Science, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
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3
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Xu J, Wood GS, Mastropaolo E, Lomax P, Newton M, Cheung R. A Closed Cavity Ultrasonic Resonator Formed by Graphene/PMMA Membrane for Acoustic Application. MICROMACHINES 2023; 14:810. [PMID: 37421043 DOI: 10.3390/mi14040810] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2023] [Revised: 03/20/2023] [Accepted: 03/27/2023] [Indexed: 07/09/2023]
Abstract
A graphene/poly(methyl methacrylate) (PMMA) closed cavity resonator with a resonant frequency at around 160 kHz has been fabricated. A six-layer graphene structure with a 450 nm PMMA laminated layer has been dry-transferred onto the closed cavity with an air gap of 105 μm. The resonator has been actuated in an atmosphere and at room temperature by mechanical, electrostatic and electro-thermal methods. The (1,1) mode has been observed to dominate the resonance, which suggests that the graphene/PMMA membrane has been perfectly clamped and seals the closed cavity. The degree of linearity of the membrane's displacement versus the actuation signal has been determined. The resonant frequency has been observed to be tuned to around 4% by applying an AC voltage through the membrane. The strain has been estimated to be around 0.08%. This research puts forward a graphene-based sensor design for acoustic sensing.
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Affiliation(s)
- Jing Xu
- The School of Engineering, Institute for Integrated Micro and Nano Systems, University of Edinburgh, Edinburgh EH9 3FF, UK
- AAC Technologies (Scotland) Limited, Edinburgh EH3 8EG, UK
| | - Graham S Wood
- The School of Engineering, Institute for Integrated Micro and Nano Systems, University of Edinburgh, Edinburgh EH9 3FF, UK
| | - Enrico Mastropaolo
- The School of Engineering, Institute for Integrated Micro and Nano Systems, University of Edinburgh, Edinburgh EH9 3FF, UK
| | - Peter Lomax
- The School of Engineering, Institute for Integrated Micro and Nano Systems, University of Edinburgh, Edinburgh EH9 3FF, UK
| | - Michael Newton
- The Acoustics and Audio Group, University of Edinburgh, Edinburgh EH8 9DF, UK
| | - Rebecca Cheung
- The School of Engineering, Institute for Integrated Micro and Nano Systems, University of Edinburgh, Edinburgh EH9 3FF, UK
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4
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Graphene nano-electromechanical mass sensor with high resolution at room temperature. iScience 2023; 26:105958. [PMID: 36718371 PMCID: PMC9883292 DOI: 10.1016/j.isci.2023.105958] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2022] [Revised: 12/26/2022] [Accepted: 01/08/2023] [Indexed: 01/15/2023] Open
Abstract
The inherent properties of 2D materials-light mass, high out-of-plane flexibility, and large surface area-promise great potential for precise and accurate nanomechanical mass sensing, but their application is often hampered by surface contamination. Here we demonstrate a tri-layer graphene nanomechanical resonant mass sensor with sub-attogram resolution at room temperature, fabricated by a bottom-up process. We found that Joule-heating is effective in cleaning the graphene membrane surface, which results in a large improvement in the stability of the resonance frequency. We characterized the sensor by depositing Cr metal using a stencil mask and found a mass-resolution that is sufficient to weigh very small particles, like large proteins and protein complexes, with potential applications in the fields of nanobiology and medicine.
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5
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Zhang P, Jia Y, Xie M, Liu Z, Shen S, Wei J, Yang R. Strain-Modulated Dissipation in Two-Dimensional Molybdenum Disulfide Nanoelectromechanical Resonators. ACS NANO 2022; 16:2261-2270. [PMID: 35107966 DOI: 10.1021/acsnano.1c08380] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Resonant nanoelectromechanical systems (NEMS) based on two-dimensional (2D) materials such as molybdenum disulfide (MoS2) are interesting for highly sensitive mass, force, photon, or inertial transducers, as well as for fundamental research approaching the quantum limit, by leveraging the mechanical degree of freedom in these atomically thin materials. For these mechanical resonators, the quality factor (Q) is essential, yet the mechanism and tuning methods for energy dissipation in 2D NEMS resonators have not been fully explored. Here, we demonstrate that by tuning static strain and vibration-induced strain in suspended MoS2 using gate voltages, we can effectively tune the Q in 2D MoS2 NEMS resonators. We further show that for doubly clamped resonators, the Q increases with larger DC gate voltage, while fully clamped drumhead resonators show the opposite trend. Using DC gate voltages, we can tune the Q by ΔQ/Q = 448% for fully clamped resonators, and by ΔQ/Q = 369% for doubly clamped resonators. We develop the strain-modulated dissipation model for these 2D NEMS resonators, which is verified against our measurement data for 8 fully clamped resonators and 7 doubly clamped resonators. We find that static tensile strain decreases dissipation while vibration-induced strain increases dissipation, and the actual dependence of Q on DC gate voltage depends on the competition between these two effects, which is related to the device boundary condition. Such strain dependence of Q is useful for optimizing the resonance linewidth in 2D NEMS resonators toward low-power, ultrasensitive, and frequency-selective devices for sensing and signal processing.
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Affiliation(s)
- Pengcheng Zhang
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yueyang Jia
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Maosong Xie
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zuheng Liu
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Sheng Shen
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jianyong Wei
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Rui Yang
- University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai 200240, China
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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6
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Su ZJ, Ying Y, Song XX, Zhang ZZ, Zhang QH, Cao G, Li HO, Guo GC, Guo GP. Tunable parametric amplification of a graphene nanomechanical resonator in the nonlinear regime. NANOTECHNOLOGY 2021; 32:155203. [PMID: 33181503 DOI: 10.1088/1361-6528/abc9ea] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Parametric amplification is widely used in nanoelectro-mechanical systems to enhance the transduced mechanical signals. Although parametric amplification has been studied in different mechanical resonator systems, the nonlinear dynamics involved receives less attention. Taking advantage of the excellent electrical and mechanical properties of graphene, we demonstrate electrical tunable parametric amplification using a doubly clamped graphene nanomechanical resonator. By applying external microwave pumping with twice the resonant frequency, we investigate parametric amplification in the nonlinear regime. We experimentally show that the extracted coefficient of the nonlinear Duffing force α and the nonlinear damping coefficient η vary as a function of external pumping power, indicating the influence of higher-order nonlinearity beyond the Duffing (∼x 3) and van der Pol (∼[Formula: see text]) types in our device. Even when the higher-order nonlinearity is involved, parametric amplification still can be achieved in the nonlinear regime. The parametric gain increases and shows a tendency of saturation with increasing external pumping power. Further, the parametric gain can be electrically tuned by the gate voltage with a maximum gain of 10.2 dB achieved at the gate voltage of 19 V. Our results will benefit studies on nonlinear dynamics, especially nonlinear damping in graphene nanomechanical resonators that has been debated in the community over past decade.
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Affiliation(s)
- Zi-Jia Su
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Yue Ying
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Xiang-Xiang Song
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Zhuo-Zhi Zhang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Qing-Hang Zhang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Gang Cao
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Hai-Ou Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Guo-Ping Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Origin Quantum Computing Company Limited, Hefei, Anhui 230088, People's Republic of China
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7
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Lemme MC, Wagner S, Lee K, Fan X, Verbiest GJ, Wittmann S, Lukas S, Dolleman RJ, Niklaus F, van der Zant HSJ, Duesberg GS, Steeneken PG. Nanoelectromechanical Sensors Based on Suspended 2D Materials. RESEARCH (WASHINGTON, D.C.) 2020; 2020:8748602. [PMID: 32766550 PMCID: PMC7388062 DOI: 10.34133/2020/8748602] [Citation(s) in RCA: 39] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/11/2020] [Accepted: 04/23/2020] [Indexed: 01/09/2023]
Abstract
The unique properties and atomic thickness of two-dimensional (2D) materials enable smaller and better nanoelectromechanical sensors with novel functionalities. During the last decade, many studies have successfully shown the feasibility of using suspended membranes of 2D materials in pressure sensors, microphones, accelerometers, and mass and gas sensors. In this review, we explain the different sensing concepts and give an overview of the relevant material properties, fabrication routes, and device operation principles. Finally, we discuss sensor readout and integration methods and provide comparisons against the state of the art to show both the challenges and promises of 2D material-based nanoelectromechanical sensing.
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Affiliation(s)
- Max C. Lemme
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
- AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Stefan Wagner
- AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
| | - Kangho Lee
- Institute of Physics, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany
| | - Xuge Fan
- Division of Micro and Nanosystems, KTH Royal Institute of Technology, Malvinas Väg 10, 10044 Stockholm, Sweden
| | - Gerard J. Verbiest
- Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, Netherlands
| | | | - Sebastian Lukas
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany
| | - Robin J. Dolleman
- 2nd Institute of Physics, RWTH Aachen University, Otto-Blumenthal-Str., 52074 Aachen, Germany
| | - Frank Niklaus
- Division of Micro and Nanosystems, KTH Royal Institute of Technology, Malvinas Väg 10, 10044 Stockholm, Sweden
| | - Herre S. J. van der Zant
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
| | - Georg S. Duesberg
- Institute of Physics, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany
| | - Peter G. Steeneken
- Department of Precision and Microsystems Engineering, Delft University of Technology, Mekelweg 2, 2628 CD Delft, Netherlands
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands
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8
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Mao W, Jiang M, Ji J, Liu Y, Kan C. Fluorescent incandescent light sources from individual quadrilateral ZnO microwire via Ga-incorporation. OPTICS EXPRESS 2019; 27:33298-33311. [PMID: 31878401 DOI: 10.1364/oe.27.033298] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2019] [Accepted: 09/27/2019] [Indexed: 06/10/2023]
Abstract
By means of nanophotonics principle, the thermal radiation can be tailored, thus, traditional tungsten lamp light source can glow the vitality and the vigor due to the low-efficiency approaching to commercial fluorescent or light-emitting diode bulbs. However, too far by demanding exacting terms, such as high-temperature thermal radiation (∼ 3000 K), high-vacuum encapsulation technology, restricted spectrally controllable source and so on, tungsten-based incandescent lamp filament has greatly limited the application in lighting, diagnosis and treatment, communication, imaging, etc. Herein, individual Ga-doped ZnO microwires (ZnO:Ga MWs) were successfully synthesized, which can be utilized to construct typical incandescent sources. By adjusting the Ga-incorporation, lighting colors are tuned in the visible spectral band. Especially, by incorporating Au quasiparticle nanofilms, the incandescent lighting features can further be modulated, such as the emission peaks, the modulation of lighting regions. Therefore, individual ZnO:Ga MWs based incandescent emitters can undertake a new function of the oldest, affordable and easily prepared light sources. While preliminary, individual ZnO:Ga MWs being treated as efficient incandescent light sources, can also open up intriguing scientific questions, and possible applications of linear, transparent, flexible displays and optical interconnects with electronic circuits.
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9
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Fan X, Forsberg F, Smith AD, Schröder S, Wagner S, Östling M, Lemme MC, Niklaus F. Suspended Graphene Membranes with Attached Silicon Proof Masses as Piezoresistive Nanoelectromechanical Systems Accelerometers. NANO LETTERS 2019; 19:6788-6799. [PMID: 31478660 PMCID: PMC6791286 DOI: 10.1021/acs.nanolett.9b01759] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
Graphene is an atomically thin material that features unique electrical and mechanical properties, which makes it an extremely promising material for future nanoelectromechanical systems (NEMS). Recently, basic NEMS accelerometer functionality has been demonstrated by utilizing piezoresistive graphene ribbons with suspended silicon proof masses. However, the proposed graphene ribbons have limitations regarding mechanical robustness, manufacturing yield, and the maximum measurement current that can be applied across the ribbons. Here, we report on suspended graphene membranes that are fully clamped at their circumference and have attached silicon proof masses. We demonstrate their utility as piezoresistive NEMS accelerometers, and they are found to be more robust, have longer life span and higher manufacturing yield, can withstand higher measurement currents, and are able to suspend larger silicon proof masses, as compared to the previous graphene ribbon devices. These findings are an important step toward bringing ultraminiaturized piezoresistive graphene NEMS closer toward deployment in emerging applications such as in wearable electronics, biomedical implants, and internet of things (IoT) devices.
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Affiliation(s)
- Xuge Fan
- Department
of Micro and Nanosystems, School of Electrical Engineering and Computer
Science, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
- E-mail: (X. F.)
| | | | - Anderson D. Smith
- Department
of Integrated Devices and Circuits, School of Electrical Engineering
and Computer Science, KTH Royal Institute
of Technology, SE-164 40 Kista, Sweden
| | - Stephan Schröder
- Department
of Micro and Nanosystems, School of Electrical Engineering and Computer
Science, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
| | - Stefan Wagner
- Faculty
of Electrical Engineering and Information Technology, RWTH Aachen University, Otto-Blumenthal-Strsse 25, 52074 Aachen, Germany
| | - Mikael Östling
- Department
of Integrated Devices and Circuits, School of Electrical Engineering
and Computer Science, KTH Royal Institute
of Technology, SE-164 40 Kista, Sweden
| | - Max C. Lemme
- Faculty
of Electrical Engineering and Information Technology, RWTH Aachen University, Otto-Blumenthal-Strsse 25, 52074 Aachen, Germany
- Department
of Integrated Devices and Circuits, School of Electrical Engineering
and Computer Science, KTH Royal Institute
of Technology, SE-164 40 Kista, Sweden
- E-mail: (M.C.L.)
| | - Frank Niklaus
- Department
of Micro and Nanosystems, School of Electrical Engineering and Computer
Science, KTH Royal Institute of Technology, SE-10044 Stockholm, Sweden
- E-mail: (F.N.)
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10
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Jiang Y, Chen W, Wang J. Broadband MoS 2-based absorber investigated by a generalized interference theory. OPTICS EXPRESS 2018; 26:24403-24412. [PMID: 30469559 DOI: 10.1364/oe.26.024403] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/06/2018] [Accepted: 08/27/2018] [Indexed: 06/09/2023]
Abstract
In this paper, a broadband absorber utilizing monolayer molybdenum disulfide (MoS2) is proposed, and a generalized interference theory (GIT) is derived to investigate this absorber. Using the hybrid Lorentz-Drude and Gaussian model of monolayer MoS2 and the dyadic Green's functions, the propagation properties of monolayer MoS2 are first investigated. Then, a sandwich-like MoS2-based absorber design is proposed in the visible regime. The sandwich-like structure is mounted on a fully reflective gold mirror, which forms a Fabry-Perot resonator to strengthen light-matter interactions and enhance the absorption. To numerically calculate the absorption performance of this absorber, the GIT is next derived from interference theory. The numerical results indicate that an absorption ≥ 90% is obtained for a range of wavelengths (λ) from 389 to 517 nm, and this absorber can operate well, even with an angle of incidence up to 60°, which also verifies the prediction of the MoS2-based absorber mainly operating at λ < 700 nm. Afterward, the operating mechanism of the proposed design is determined using the theory of destructive interference. Finally, the proposed design and derived GIT are validated by a simulation using commercial electromagnetic software. The derived GIT drives the numerical investigation of the multilayer structure with various polarization types and angles of incidence of the waves, and the MoS2-based absorber can be used in several applications such as photoelectric storage and photoelectric detection.
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