1
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Barbot C, Rondeau-Body C, Coinon C, Deblock Y, Tilmant P, Vaurette F, Yarekha D, Berthe M, Thomas L, Diesinger H, Capiod P, Desplanque L, Grandidier B. InGaAs quantum dot chains grown by twofold selective area molecular beam epitaxy. NANOTECHNOLOGY 2024; 35:395302. [PMID: 38964286 DOI: 10.1088/1361-6528/ad5f34] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2024] [Accepted: 07/04/2024] [Indexed: 07/06/2024]
Abstract
Increasing quantum confinement in semiconductor quantum dot (QD) systems is essential to perform robust simulations of many-body physics. By combining molecular beam epitaxy and lithographic techniques, we developed an approach consisting of a twofold selective area growth to build QD chains. Starting from 15 nm-thick and 65 nm-wide in-plane In0.53Ga0.47As nanowires on InP substrates, linear arrays of In0.53Ga0.47As QDs were grown on top, with tunable lengths and separations. Kelvin probe force microscopy performed at room temperature revealed a change of quantum confinement in chains with decreasing QD sizes, which was further emphasized by the spectral shift of quantum levels resolved in the conduction band with low temperature scanning tunneling spectroscopy. This approach, which allows the controlled formation of 25 nm-thick QDs with a minimum length and separation of 30 nm and 22 nm respectively, is suitable for the construction of scalable fermionic quantum lattices.
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Affiliation(s)
- Clément Barbot
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Claire Rondeau-Body
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Christophe Coinon
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Yves Deblock
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Pascal Tilmant
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - François Vaurette
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Dmitri Yarekha
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Maxime Berthe
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Louis Thomas
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Heinrich Diesinger
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Pierre Capiod
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Ludovic Desplanque
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Bruno Grandidier
- University Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
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2
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Lengle D, Schwarz M, Patjens S, Stuckelberger ME, Ruhmlieb C, Mews A, Dorn A. Tracking Cation Exchange in Individual Nanowires via Transistor Characterization. ACS NANO 2024; 18:18036-18045. [PMID: 38916252 PMCID: PMC11238621 DOI: 10.1021/acsnano.4c05197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2024] [Revised: 05/31/2024] [Accepted: 06/11/2024] [Indexed: 06/26/2024]
Abstract
Cation exchange is a versatile method for modifying the material composition and properties of nanostructures. However, control of the degree of exchange and material properties is difficult at the single-particle level. Successive cation exchange from CdSe to Ag2Se has been utilized here on the same individual nanowires to monitor the change of electronic properties in field-effect transistor devices. The transistors were fabricated by direct synthesis of CdSe nanowires on prepatterned substrates followed by optical lithography. The devices were then subjected to cation exchange by submerging them in an exchange solution containing silver nitrate. By removal of the devices from solution and probing the electrical transport properties at different times, the change in electronic properties of individual nanowires could be monitored throughout the entire exchange reaction from CdSe to Ag2Se. Transistor characterization revealed that the electrical conductivity can be tuned by up to 8 orders of magnitude and the charge-carrier mobility by 7 orders of magnitude. While analysis of the material composition by energy dispersive X-ray spectroscopy confirmed successful cation exchange from CdSe to Ag2Se, X-ray fluorescence spectroscopy proved that cation exchange also took place below the contacts. The method presented here demonstrates an efficient way to tune the material composition and access the resulting properties nondestructively at the single-particle level. This approach can be readily applied to many other material systems and can be used to study the electrical properties of nanostructures as a function of material composition or to optimize nanostructure-based devices after fabrication.
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Affiliation(s)
- Daniel Lengle
- Institute
of Physical Chemistry, University of Hamburg, 20146 Hamburg, Germany
- The
Hamburg Center for Ultrafast Imaging, 22761 Hamburg, Germany
| | - Maximilian Schwarz
- Institute
of Physical Chemistry, University of Hamburg, 20146 Hamburg, Germany
| | - Svenja Patjens
- Institute
of Physical Chemistry, University of Hamburg, 20146 Hamburg, Germany
- Centre
for X-ray and Nano Science CXNS, Deutsches
Elektronen-Synchrotron DESY, 22607 Hamburg, Germany
| | - Michael E. Stuckelberger
- Centre
for X-ray and Nano Science CXNS, Deutsches
Elektronen-Synchrotron DESY, 22607 Hamburg, Germany
| | - Charlotte Ruhmlieb
- Institute
of Physical Chemistry, University of Hamburg, 20146 Hamburg, Germany
| | - Alf Mews
- Institute
of Physical Chemistry, University of Hamburg, 20146 Hamburg, Germany
- The
Hamburg Center for Ultrafast Imaging, 22761 Hamburg, Germany
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3
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Mimona MA, Mobarak MH, Ahmed E, Kamal F, Hasan M. Nanowires: Exponential speedup in quantum computing. Heliyon 2024; 10:e31940. [PMID: 38845958 PMCID: PMC11153239 DOI: 10.1016/j.heliyon.2024.e31940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 05/24/2024] [Accepted: 05/24/2024] [Indexed: 06/09/2024] Open
Abstract
This review paper examines the crucial role of nanowires in the field of quantum computing, highlighting their importance as versatile platforms for qubits and vital building blocks for creating fault-tolerant and scalable quantum information processing systems. Researchers are studying many categories of nanowires, including semiconductor, superconducting, and topological nanowires, to explore their distinct quantum features that play a role in creating various qubit designs. The paper explores the interdisciplinary character of quantum computing, combining the fields of quantum physics and materials science. This text highlights the significance of quantum gate operations in manipulating qubits for computation, thus creating the toolbox of quantum algorithms. The paper emphasizes the key research areas in quantum technology, such as entanglement engineering, quantum error correction, and a wide range of applications spanning from encryption to climate change modeling. The research highlights the importance of tackling difficulties related to decoding mitigation, error correction, and hardware scalability to fully utilize the transformative potential of quantum computing in scientific, technical, and computational fields.
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Affiliation(s)
- Mariam Akter Mimona
- Department of Computer Science & Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Md Hosne Mobarak
- Department of Mechanical Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Emtiuz Ahmed
- Department of Computer Science & Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Farzana Kamal
- Department of Computer Science & Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Mehedi Hasan
- Department of Mechanical Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
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4
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Olsteins D, Nagda G, Carrad DJ, Beznasyuk DV, Petersen CEN, Martí-Sánchez S, Arbiol J, Jespersen TS. Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices. NANO LETTERS 2024; 24:6553-6559. [PMID: 38775731 DOI: 10.1021/acs.nanolett.4c01038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
New approaches such as selective area growth (SAG), where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility.
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Affiliation(s)
- Dags Olsteins
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Gunjan Nagda
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Damon J Carrad
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Daria V Beznasyuk
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Christian E N Petersen
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Bellaterra, Barcelona, Catalonia, Spain
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, 08193 Bellaterra, Barcelona, Catalonia, Spain
- ICREA, Passeig de Lluís Companys 23, 08010 Barcelona, Catalonia, Spain
| | - Thomas Sand Jespersen
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kgs. Lyngby, Denmark
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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5
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Ramanandan SP, Reñé Sapera J, Morelle A, Martí-Sánchez S, Rudra A, Arbiol J, Dubrovskii VG, Fontcuberta I Morral A. Control of Ge island coalescence for the formation of nanowires on silicon. NANOSCALE HORIZONS 2024; 9:555-565. [PMID: 38353654 PMCID: PMC10962639 DOI: 10.1039/d3nh00573a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2023] [Accepted: 02/05/2024] [Indexed: 03/26/2024]
Abstract
Germanium nanowires could be the building blocks of hole-spin qubit quantum computers. Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while controlling the device design, density, and scalability. For this to become a reality, it is essential to understand and control the initial stages of the epitaxy process. In this work, we highlight the importance of surface treatment in the reactor prior to growth to achieve high crystal quality and connected Ge nanowire structures. In particular, we demonstrate that exposure to AsH3 during the high-temperature treatment enhances lateral growth of initial Ge islands and promotes faster formation of continuous Ge nanowires in trenches. The Kolmogorov-Johnson-Mehl-Avrami crystallization model supports our explanation of Ge coalescence. These results provide critical insight into the selective epitaxy of horizontal Ge nanowires on lattice-mismatched Si substrates, which can be translated to other material systems.
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Affiliation(s)
- Santhanu Panikar Ramanandan
- Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland.
| | - Joel Reñé Sapera
- Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland.
| | - Alban Morelle
- Solid State Laboratory, ETH Zurich, 8093 Zurich, Switzerland
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain
| | - Alok Rudra
- Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland.
- Institute of Physics, Faculty of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain
- ICREA, Pg. Lluís Companys 23, 08010 Barcelona, Catalonia, Spain
| | - Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland.
- Institute of Physics, Faculty of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland
- Center for Quantum Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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6
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Badawy G, Bakkers EPAM. Electronic Transport and Quantum Phenomena in Nanowires. Chem Rev 2024; 124:2419-2440. [PMID: 38394689 PMCID: PMC10941195 DOI: 10.1021/acs.chemrev.3c00656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Revised: 01/26/2024] [Accepted: 02/08/2024] [Indexed: 02/25/2024]
Abstract
Nanowires are natural one-dimensional channels and offer new opportunities for advanced electronic quantum transport experiments. We review recent progress on the synthesis of nanowires and methods for the fabrication of hybrid semiconductor/superconductor systems. We discuss methods to characterize their electronic properties in the context of possible future applications such as topological and spin qubits. We focus on group III-V (InAs and InSb) and group IV (Ge/Si) semiconductors, since these are the most developed, and give an outlook on other potential materials.
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Affiliation(s)
- Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Erik P. A. M. Bakkers
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
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7
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Peng K, Morgan NP, Wagner FM, Siday T, Xia CQ, Dede D, Boureau V, Piazza V, Fontcuberta I Morral A, Johnston MB. Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires. Nat Commun 2024; 15:103. [PMID: 38167839 PMCID: PMC10761983 DOI: 10.1038/s41467-023-44345-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Accepted: 12/09/2023] [Indexed: 01/05/2024] Open
Abstract
Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodity. In this work we demonstrate scalable photoconductive THz receivers based on horizontally-grown InAs nanowires (NWs) embedded in a bow-tie antenna that work at room temperature. The NWs provide a short photoconductivity lifetime while conserving high electron mobility. The large surface-to-volume ratio also ensures low dark current and thus low thermal noise, compared to narrow-bandgap bulk devices. By engineering the NW morphology, the NWs exhibit greatly different photoconductivity lifetimes, enabling the receivers to detect THz photons via both direct and integrating sampling modes. The broadband NW receivers are compatible with gating lasers across the entire range of telecom wavelengths (1.2-1.6 μm) and thus are ideal for inexpensive all-optical fibre-based THz time-domain spectroscopy and imaging systems. The devices are deterministically positioned by lithography and thus scalable to the wafer scale, opening the path for a new generation of commercial THz receivers.
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Affiliation(s)
- Kun Peng
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - Nicholas Paul Morgan
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, 1015, Lausanne, Switzerland
| | - Ford M Wagner
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - Thomas Siday
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - Chelsea Qiushi Xia
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
| | - Didem Dede
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, 1015, Lausanne, Switzerland
| | - Victor Boureau
- Interdisciplinary Centre for Electron Microscopy, EPFL, 1015, Lausanne, Switzerland
| | - Valerio Piazza
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, 1015, Lausanne, Switzerland
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, 1015, Lausanne, Switzerland.
- Laboratory of Semiconductor Materials, Institute of Physics, EPFL, 1015, Lausanne, Switzerland.
| | - Michael B Johnston
- Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK.
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8
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Olšteins D, Nagda G, Carrad DJ, Beznasyuk DV, Petersen CEN, Martí-Sánchez S, Arbiol J, Jespersen TS. Cryogenic multiplexing using selective area grown nanowires. Nat Commun 2023; 14:7738. [PMID: 38007553 PMCID: PMC10676361 DOI: 10.1038/s41467-023-43551-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Accepted: 11/13/2023] [Indexed: 11/27/2023] Open
Abstract
Bottom-up grown nanomaterials play an integral role in the development of quantum technologies but are often challenging to characterise on large scales. Here, we harness selective area growth of semiconductor nanowires to demonstrate large-scale integrated circuits and characterisation of large numbers of quantum devices. The circuit consisted of 512 quantum devices embedded within multiplexer/demultiplexer pairs, incorporating thousands of interconnected selective area growth nanowires operating under deep cryogenic conditions. Multiplexers enable a range of new strategies in quantum device research and scaling by increasing the device count while limiting the number of connections between room-temperature control electronics and the cryogenic samples. As an example of this potential we perform a statistical characterization of large arrays of identical quantum dots thus establishing the feasibility of applying cross-bar gating strategies for efficient scaling of future selective area growth quantum circuits. More broadly, the ability to systematically characterise large numbers of devices provides new levels of statistical certainty to materials/device development.
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Affiliation(s)
- Dāgs Olšteins
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Gunjan Nagda
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark
| | - Damon J Carrad
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Daria V Beznasyuk
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Christian E N Petersen
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain
- ICREA, Passeig de Lluís Companys 23, 08010, Barcelona, Catalonia, Spain
| | - Thomas S Jespersen
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark.
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark.
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9
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Wang Y, Chen F, Song W, Geng Z, Yu Z, Yang L, Gao Y, Li R, Yang S, Miao W, Xu W, Wang Z, Xia Z, Song HD, Feng X, Wang T, Zang Y, Li L, Shang R, Xue Q, He K, Zhang H. Ballistic PbTe Nanowire Devices. NANO LETTERS 2023. [PMID: 37948302 DOI: 10.1021/acs.nanolett.3c03604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2023]
Abstract
Disorder is the primary obstacle in the current Majorana nanowire experiments. Reducing disorder or achieving ballistic transport is thus of paramount importance. In clean and ballistic nanowire devices, quantized conductance is expected, with plateau quality serving as a benchmark for disorder assessment. Here, we introduce ballistic PbTe nanowire devices grown by using the selective-area-growth (SAG) technique. Quantized conductance plateaus in units of 2e2/h are observed at zero magnetic field. This observation represents an advancement in diminishing disorder within SAG nanowires as most of the previously studied SAG nanowires (InSb or InAs) have not exhibited zero-field ballistic transport. Notably, the plateau values indicate that the ubiquitous valley degeneracy in PbTe is lifted in nanowire devices. This degeneracy lifting addresses an additional concern in the pursuit of Majorana realization. Moreover, these ballistic PbTe nanowires may enable the search for clean signatures of the spin-orbit helical gap in future devices.
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Affiliation(s)
- Yuhao Wang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Fangting Chen
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wenyu Song
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zuhan Geng
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zehao Yu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Lining Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yichun Gao
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Ruidong Li
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Shuai Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wentao Miao
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wei Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zhaoyu Wang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zezhou Xia
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Hua-Ding Song
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Xiao Feng
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Hefei National Laboratory, Hefei 230088, China
| | - Tiantian Wang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Hefei National Laboratory, Hefei 230088, China
| | - Yunyi Zang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Hefei National Laboratory, Hefei 230088, China
| | - Lin Li
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Runan Shang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Hefei National Laboratory, Hefei 230088, China
| | - Qikun Xue
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Hefei National Laboratory, Hefei 230088, China
- Southern University of Science and Technology, Shenzhen 518055, China
| | - Ke He
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Hefei National Laboratory, Hefei 230088, China
| | - Hao Zhang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
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10
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Hager A, Güniat L, Morgan N, Ramanandan SP, Rudra A, Piazza V, Fontcuberta I Morral A, Dede D. The implementation of thermal and UV nanoimprint lithography for selective area epitaxy. NANOTECHNOLOGY 2023; 34:445301. [PMID: 37494897 DOI: 10.1088/1361-6528/acea87] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/03/2023] [Accepted: 07/25/2023] [Indexed: 07/28/2023]
Abstract
Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on the growth masks. Electron beam lithography offers an extraordinary accuracy suited for the purpose. However, this technique is not economically viable for large production as it has a low throughput and requires high investment and operational costs. Nanoimprint lithography (NIL) has the potential to reduce fabrication time and costs significantly while requiring less sophisticated equipment. In this work, we utilize both thermal and UV NIL for patterning substrates for SAE, elucidating the advantages and disadvantages of each lithography technique. We demonstrate the epitaxial growth of Ge and GaAs NWs on these substrates, where we observe high-quality mono-crystalline structures. Even though both processes can produce small uniform structures suitable for SAE, our results show that UV NIL proves to be superior and enables reliable and efficient patterning of sub-100 nm mask features at the wafer scale.
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Affiliation(s)
- Antonia Hager
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne, Switzerland
| | - Lucas Güniat
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne, Switzerland
| | - Nicholas Morgan
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne, Switzerland
| | - Santhanu Panikar Ramanandan
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne, Switzerland
| | - Alok Rudra
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne, Switzerland
| | - Valerio Piazza
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne, Switzerland
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne, Switzerland
- Faculty of Basic Sciences, Institute of Physics, École Polytechnique Fédérale de Lausanne, Switzerland
| | - Didem Dede
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne, Switzerland
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11
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Morgan N, Dubrovskii VG, Stief AK, Dede D, Sanglé-Ferrière M, Rudra A, Piazza V, Fontcuberta i Morral A. From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE. CRYSTAL GROWTH & DESIGN 2023; 23:5083-5092. [PMID: 37426543 PMCID: PMC10326851 DOI: 10.1021/acs.cgd.3c00316] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 06/01/2023] [Indexed: 07/11/2023]
Abstract
Selective area epitaxy at the nanoscale enables fabrication of high-quality nanostructures in regular arrays with predefined geometry. Here, we investigate the growth mechanisms of GaAs nanoridges on GaAs (100) substrates in selective area trenches by metal-organic vapor-phase epitaxy (MOVPE). It is found that pre-growth annealing results in the formation of valley-like structures of GaAs with atomic terraces inside the trenches. MOVPE growth of GaAs nanoridges consists of three distinct stages. Filling the trench in the first stage exhibits a step-flow growth behavior. Once the structure grows above the mask surface, it enters the second stage of growth by forming {101} side facets as the (100) flat top facet progressively shrinks. In the third stage, the fully formed nanoridge begins to overgrow onto the mask with a significantly reduced growth rate. We develop a kinetic model that accurately describes the width-dependent evolution of the nanoridge morphology through all three stages. MOVPE growth of fully formed nanoridges takes only about 1 min, which is 60 times faster than in our set of molecular beam epitaxy (MBE) experiments reported recently, and with a more regular, triangular cross-sectional geometry defined solely by the {101} facets. In contrast to MBE, no material loss due to Ga adatom diffusion onto the mask surface is observed in MOVPE until the third stage of growth. These results are useful for the fabrication of GaAs nanoridges of different dimensions on the same substrate for various applications and can be extended to other material systems.
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Affiliation(s)
- Nicholas Morgan
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Vladimir G. Dubrovskii
- Faculty
of Physics, Saint Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia
| | - Ann-Kristin Stief
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Didem Dede
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Marie Sanglé-Ferrière
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Alok Rudra
- Laboratory
of Semiconductor Materials, Institute of Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Valerio Piazza
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Anna Fontcuberta i Morral
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
- Laboratory
of Semiconductor Materials, Institute of Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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12
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Huang C, Dede D, Morgan N, Piazza V, Hu X, Fontcuberta I Morral A, Lauhon LJ. Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires. NANO LETTERS 2023. [PMID: 37402180 PMCID: PMC10375592 DOI: 10.1021/acs.nanolett.3c00281] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2023]
Abstract
Selective area epitaxy is a promising approach to define nanowire networks for topological quantum computing. However, it is challenging to concurrently engineer nanowire morphology, for carrier confinement, and precision doping, to tune carrier density. We report a strategy to promote Si dopant incorporation and suppress dopant diffusion in remote doped InGaAs nanowires templated by GaAs nanomembrane networks. Growth of a dilute AlGaAs layer following doping of the GaAs nanomembrane induces incorporation of Si that otherwise segregates to the growth surface, enabling precise control of the spacing between the Si donors and the undoped InGaAs channel; a simple model captures the influence of Al on the Si incorporation rate. Finite element modeling confirms that a high electron density is produced in the channel.
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Affiliation(s)
- Chunyi Huang
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Didem Dede
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, Route Cantonale, Lausanne, Vaud 1015, Switzerland
| | - Nicholas Morgan
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, Route Cantonale, Lausanne, Vaud 1015, Switzerland
| | - Valerio Piazza
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, Route Cantonale, Lausanne, Vaud 1015, Switzerland
| | - Xiaobing Hu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- The NUANCE Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, Route Cantonale, Lausanne, Vaud 1015, Switzerland
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
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13
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Khelifi W, Coinon C, Berthe M, Troadec D, Patriarche G, Wallart X, Grandidier B, Desplanque L. Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell. NANOTECHNOLOGY 2023; 34:265704. [PMID: 36975178 DOI: 10.1088/1361-6528/acc810] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Accepted: 03/28/2023] [Indexed: 06/18/2023]
Abstract
The nanoscale intrinsic electrical properties of in-plane InAs nanowires grown by selective area epitaxy are investigated using a process-free method involving a multi-probe scanning tunneling microscope. The resistance of oxide-free InAs nanowires grown on an InP(111)Bsubstrate and the resistance of InAs/GaSb core-shell nanowires grown on an InP(001) substrate are measured using a collinear four-point probe arrangement in ultrahigh vacuum. They are compared with the resistance of two-dimensional electron gas reference samples measured using the same method and with the Van der Pauw geometry for validation. A significant improvement of the conductance is achieved when the InAs nanowires are fully embedded in GaSb, exhibiting an intrinsic sheet conductance close to the one of the quantum well counterpart.
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Affiliation(s)
- W Khelifi
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - C Coinon
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - M Berthe
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - D Troadec
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - G Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, F-91120, Palaiseau, France
| | - X Wallart
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - B Grandidier
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
| | - L Desplanque
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520 - IEMN, F-59000 Lille, France
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14
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Rothman A, Bukvišová K, Itzhak NR, Kaplan-Ashiri I, Kossoy AE, Sui X, Novák L, Šikola T, Kolíbal M, Joselevich E. Real-Time Study of Surface-Guided Nanowire Growth by In Situ Scanning Electron Microscopy. ACS NANO 2022; 16:18757-18766. [PMID: 36305551 PMCID: PMC9706663 DOI: 10.1021/acsnano.2c07480] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/27/2022] [Accepted: 10/24/2022] [Indexed: 06/16/2023]
Abstract
Surface-guided growth has proven to be an efficient approach for the production of nanowire arrays with controlled orientations and their large-scale integration into electronic and optoelectronic devices. Much has been learned about the different mechanisms of guided nanowire growth by epitaxy, graphoepitaxy, and artificial epitaxy. A model describing the kinetics of surface-guided nanowire growth has been recently reported. Yet, many aspects of the surface-guided growth process remain unclear due to a lack of its observation in real time. Here we observe how surface-guided nanowires grow in real time by in situ scanning electron microscopy (SEM). Movies of ZnSe surface-guided nanowires growing on periodically faceted substrates of annealed M-plane sapphire clearly show how the nanowires elongate along the substrate nanogrooves while pushing the catalytic Au nanodroplet forward at the tip of the nanowire. The movies reveal the timing between competing processes, such as planar vs nonplanar growth, catalyst-selective vapor-liquid-solid elongation vs nonselective vapor-solid thickening, and the effect of topographic discontinuities of the substrate on the growth direction, leading to the formation of kinks and loops. Contrary to some observations for nonplanar nanowire growth, planar nanowires are shown to elongate at a constant rate and not by jumps. A decrease in precursor concentration as it is consumed after long reaction time causes the nanowires to shrink back instead of growing, thus indicating that the process is reversible and takes place near equilibrium. This real-time study of surface-guided growth, enabled by in situ SEM, enables a better understanding of the formation of nanostructures on surfaces.
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Affiliation(s)
- Amnon Rothman
- Department
of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot76100, Israel
| | - Kristýna Bukvišová
- Institute
of Physical Engineering, Brno University
of Technology, Technická 2, 616 69Brno, Czech Republic
- CEITEC
BUT, Brno University of Technology, Purkyňova 123, 612 00Brno, Czech
Republic
| | - Noya Ruth Itzhak
- Department
of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot76100, Israel
| | - Ifat Kaplan-Ashiri
- Department
of Chemical Research Support, Weizmann Institute
of Science, Rehovot76100, Israel
| | - Anna Eden Kossoy
- Department
of Chemical Research Support, Weizmann Institute
of Science, Rehovot76100, Israel
| | - Xiaomeng Sui
- Department
of Chemical Research Support, Weizmann Institute
of Science, Rehovot76100, Israel
| | - Libor Novák
- Thermo
Fisher Scientific, Vlastimila
Pecha 12, 627 00Brno, Czech Republic
| | - Tomáš Šikola
- Institute
of Physical Engineering, Brno University
of Technology, Technická 2, 616 69Brno, Czech Republic
- CEITEC
BUT, Brno University of Technology, Purkyňova 123, 612 00Brno, Czech
Republic
| | - Miroslav Kolíbal
- Institute
of Physical Engineering, Brno University
of Technology, Technická 2, 616 69Brno, Czech Republic
- CEITEC
BUT, Brno University of Technology, Purkyňova 123, 612 00Brno, Czech
Republic
| | - Ernesto Joselevich
- Department
of Molecular Chemistry and Materials Science, Weizmann Institute of Science, Rehovot76100, Israel
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15
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Qu J, Beznasyuk DV, Cassidy M, Tanta R, Yang L, Holmes NP, Griffith MJ, Krogstrup P, Cairney JM. Atomic-Scale Characterization of Planar Selective-Area-Grown InAs/InGaAs Nanowires. ACS APPLIED MATERIALS & INTERFACES 2022; 14:47981-47990. [PMID: 36222623 DOI: 10.1021/acsami.2c09594] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Atomic-scale information about the structural and compositional properties of novel semiconductor nanowires is essential to tailoring their properties for specific applications, but characterization at this length scale remains a challenging task. Here, quasi-1D InAs/InGaAs semiconductor nanowire arrays were grown by selective area epitaxy (SAE) using molecular beam epitaxy (MBE), and their subsequent properties were analyzed by a combination of atom probe tomography (APT) and aberration-corrected transmission electron microscopy (TEM). Results revealed the chemical composition of the outermost thin InAs layer, a fine variation in the indium content at the InAs/InGaAs interface, and lightly incorporated element tracing. The results highlight the importance of correlative microscopy approaches in revealing complex nanoscale structures, with TEM being uniquely suited to interrogating the crystallography of InGaAs NWs, whereas APT is capable of three-dimensional (3D) elemental mapping, revealing the subtle compositional variation near the boundary region. This work demonstrates a detailed pathway for the nanoscale structural assessment of novel one-dimensional (1D) nanomaterials.
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Affiliation(s)
| | - Daria V Beznasyuk
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | | | - Rawa Tanta
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | | | | | | | - Peter Krogstrup
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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16
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Dubrovskii VG. Criterion for Selective Area Growth of III-V Nanowires. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3698. [PMID: 36296889 PMCID: PMC9606971 DOI: 10.3390/nano12203698] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/07/2022] [Revised: 10/05/2022] [Accepted: 10/17/2022] [Indexed: 06/16/2023]
Abstract
A model for the nucleation of vertical or planar III-V nanowires (NWs) in selective area growth (SAG) on masked substrates with regular arrays of openings is developed. The optimal SAG zone, with NW nucleation within the openings and the absence of parasitic III-V crystallites or group III droplets on the mask, is established, taking into account the minimum chemical potential of the III-V pairs required for nucleation on different surfaces, and the surface diffusion of the group III adatoms. The SAG maps are plotted in terms of the material fluxes versus the temperature. The non-trivial behavior of the SAG window, with the opening size and pitch, is analyzed, depending on the direction of the diffusion flux of the group III adatoms into or from the openings. A good correlation of the model with the data on the SAG of vertical GaN NWs and planar GaAs and InAs NWs by molecular beam epitaxy (MBE) is demonstrated.
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Affiliation(s)
- Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
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17
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Dede D, Glas F, Piazza V, Morgan N, Friedl M, Güniat L, Nur Dayi E, Balgarkashi A, Dubrovskii VG, Fontcuberta I Morral A. Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch. NANOTECHNOLOGY 2022; 33:485604. [PMID: 35952545 DOI: 10.1088/1361-6528/ac88d9] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2022] [Accepted: 08/11/2022] [Indexed: 06/15/2023]
Abstract
Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-assembled nanowire growth mechanisms. Here we use GaAs SAE as a model system to provide a different perspective. First, we provide evidence of the significant impact of the annealing stage in the calculation of the growth rates. Then, by elucidating the effect of geometrical constraints on the growth of the semiconductor crystal, we demonstrate the role of adatom desorption and resorption beyond the direct-impingement and diffusion-limited regime. Our theoretical model explains the effect of these constraints on the growth, and in particular why the SAE growth rate is highly sensitive to the pattern geometry. Finally, the disagreement of the model at the largest pitch points to non-negligible multiple adatom recycling between patterned features. Overall, our findings point out the importance of considering adatom diffusion, adsorption and desorption dynamics in designing the SAE pattern to create pre-determined nanoscale structures across a wafer. These results are fundamental for the SAE process to become viable in the semiconductor industry.
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Affiliation(s)
- Didem Dede
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | - Frank Glas
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, Palaiseau, France
| | - Valerio Piazza
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | - Nicholas Morgan
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | - Martin Friedl
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | - Lucas Güniat
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | - Elif Nur Dayi
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | - Akshay Balgarkashi
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
| | | | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Faculty of Engineering, Institute of Materials, EPFL, Lausanne, Switzerland
- Faculty of Basic Sciences, Institute of Physics, EPFL, Lausanne, Switzerland
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18
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Gómez VJ, Marnauza M, Dick KA, Lehmann S. Growth selectivity control of InAs shells on crystal phase engineered GaAs nanowires. NANOSCALE ADVANCES 2022; 4:3330-3341. [PMID: 36131713 PMCID: PMC9417278 DOI: 10.1039/d2na00109h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/16/2022] [Accepted: 03/23/2022] [Indexed: 06/15/2023]
Abstract
In this work we demonstrate a two-fold selectivity control of InAs shells grown on crystal phase and morphology engineered GaAs nanowire (NW) core templates. This selectivity occurs driven by differences in surface energies of the NW core facets. The occurrence of the different facets itself is controlled by either forming different crystal phases or additional tuning of the core NW morphology. First, in order to study the crystal phase selectivity, GaAs NW cores with an engineered crystal phase in the axial direction were employed. A crystal phase selective growth of InAs on GaAs was found for high growth rates and short growth times. Secondly, the facet-dependant selectivity of InAs growth was studied on crystal phase controlled GaAs cores which were additionally morphology-tuned by homoepitaxial overgrowth. Following this route, the original hexagonal cores with {110} sidewalls were converted into triangular truncated NWs with ridges and predominantly {112}B facets. By precisely tuning the growth parameters, the growth of InAs is promoted over the ridges and reduced over the {112}B facets with indications of also preserving the crystal phase selectivity. In all cases (different crystal phase and facet termination), selectivity is lost for extended growth times, thus, limiting the total thickness of the shell grown under selective conditions. To overcome this issue we propose a 2-step growth approach, combining a high growth rate step followed by a low growth rate step. The control over the thickness of the InAs shells while maintaining the selectivity is demonstrated by means of a detailed transmission electron microscopy analysis. This proposed 2-step growth approach enables new functionalities in 1-D structures formed by using bottom-up techniques, with a high degree of control over shell thickness and deposition selectivity.
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Affiliation(s)
- Víctor J Gómez
- Nanophotonics Technology Center, Universidad Politécnica de Valencia Camino de Vera, s/n Building 8F | 2a Floor 46022 Valencia Spain
- Solid State Physics and NanoLund, Lund University Box 118 S-221 00 Lund Sweden
| | - Mikelis Marnauza
- Centre for Analysis and Synthesis and NanoLund, Lund University Box 124 221 00 Lund Sweden
| | - Kimberly A Dick
- Solid State Physics and NanoLund, Lund University Box 118 S-221 00 Lund Sweden
- Centre for Analysis and Synthesis and NanoLund, Lund University Box 124 221 00 Lund Sweden
| | - Sebastian Lehmann
- Solid State Physics and NanoLund, Lund University Box 118 S-221 00 Lund Sweden
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19
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Sub-nanometer mapping of strain-induced band structure variations in planar nanowire core-shell heterostructures. Nat Commun 2022; 13:4089. [PMID: 35835772 PMCID: PMC9283334 DOI: 10.1038/s41467-022-31778-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/12/2022] [Accepted: 07/01/2022] [Indexed: 11/22/2022] Open
Abstract
Strain relaxation mechanisms during epitaxial growth of core-shell nanostructures play a key role in determining their morphologies, crystal structure and properties. To unveil those mechanisms, we perform atomic-scale aberration-corrected scanning transmission electron microscopy studies on planar core-shell ZnSe@ZnTe nanowires on α-Al2O3 substrates. The core morphology affects the shell structure involving plane bending and the formation of low-angle polar boundaries. The origin of this phenomenon and its consequences on the electronic band structure are discussed. We further use monochromated valence electron energy-loss spectroscopy to obtain spatially resolved band-gap maps of the heterostructure with sub-nanometer spatial resolution. A decrease in band-gap energy at highly strained core-shell interfacial regions is found, along with a switch from direct to indirect band-gap. These findings represent an advance in the sub-nanometer-scale understanding of the interplay between structure and electronic properties associated with highly mismatched semiconductor heterostructures, especially with those related to the planar growth of heterostructured nanowire networks. Planar growth of nanowire arrays involves interactions between materials that affect the electronic behavior of the effective heterojunction. Here, authors show how core curvature and cross-section morphology affect shell growth, demonstrating how strain at the core-shell interface induces electronic band modulations in ZnSe@ZnTe nanowires.
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20
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Yu L, Cai W, Wang L, Lee CY, Sun S, Xiao Y, Shen KC, Chen C. Three-Dimensional crystallized ZnO crosslinked nanowire structure. INORG CHEM COMMUN 2022. [DOI: 10.1016/j.inoche.2022.109413] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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21
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Ramanandan S, Tomić P, Morgan NP, Giunto A, Rudra A, Ensslin K, Ihn T, Fontcuberta i Morral A. Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks. NANO LETTERS 2022; 22:4269-4275. [PMID: 35507698 PMCID: PMC9136922 DOI: 10.1021/acs.nanolett.2c00358] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2022] [Revised: 04/23/2022] [Indexed: 05/28/2023]
Abstract
Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin-orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge noise and hyperfine interaction. Here, we demonstrate a scalable approach to synthesize and organize Ge nanowires on silicon (100)-oriented substrates. Germanium nanowire networks are obtained by selectively growing on nanopatterned slits in a metalorganic vapor phase epitaxy system. Low-temperature electronic transport measurements are performed on nanowire Hall bar devices revealing high hole doping of ∼1018 cm-3 and mean free path of ∼10 nm. Quantum diffusive transport phenomena, universal conductance fluctuations, and weak antilocalization are revealed through magneto transport measurements yielding a coherence and a spin-orbit length of the order of 100 and 10 nm, respectively.
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Affiliation(s)
- Santhanu
Panikar Ramanandan
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland
| | - Petar Tomić
- Solid
State Laboratory, ETH Zurich, 8093 Zurich, Switzerland
| | - Nicholas Paul Morgan
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland
| | - Andrea Giunto
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland
| | - Alok Rudra
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland
| | - Klaus Ensslin
- Solid
State Laboratory, ETH Zurich, 8093 Zurich, Switzerland
- Quantum
Center, ETH Zurich, CH-8093 Zurich, Switzerland
| | - Thomas Ihn
- Solid
State Laboratory, ETH Zurich, 8093 Zurich, Switzerland
- Quantum
Center, ETH Zurich, CH-8093 Zurich, Switzerland
| | - Anna Fontcuberta i Morral
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland
- Institute
of Physics, Faculty of Basic Sciences, Ecole
Polytechnique Fédérale de Lausanne EPFL, Lausanne 1015, Switzerland
- Center
for Quantum Science and Engineering, École
Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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22
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Escobar Steinvall S, Stutz EZ, Paul R, Zamani M, Leran JB, Dimitrievska M, Fontcuberta i Morral A. Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide. ACS APPLIED ENERGY MATERIALS 2022; 5:5298-5306. [PMID: 35647493 PMCID: PMC9131307 DOI: 10.1021/acsaem.1c02484] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2021] [Accepted: 09/28/2021] [Indexed: 05/15/2023]
Abstract
Growth approaches that limit the interface area between layers to nanoscale regions are emerging as a promising pathway to limit the interface defect formation due to mismatching lattice parameters or thermal expansion coefficient. Interfacial defect mitigation is of great interest in photovoltaics as it opens up more material combinations for use in devices. Herein, an overview of the vapor-liquid-solid and selective area epitaxy growth approaches applied to zinc phosphide (Zn3P2), an earth-abundant absorber material, is presented. First, we show how different morphologies, including nanowires, nanopyramids, and thin films, can be achieved by tuning the growth conditions and growth mechanisms. The growth conditions are also shown to greatly impact the defect structure and composition of the grown material, which can vary considerably from the ideal stoichiometry (Zn3P2). Finally, the functional properties are characterized. The direct band gap could accurately be determined at 1.50 ± 0.1 eV, and through complementary density functional theory calculations, we can identify a range of higher-order band gap transitions observed through valence electron energy loss spectroscopy and cathodoluminescence. Furthermore, we outline the formation of rotated domains inside of the material, which are a potential origin of defect transitions that have been long observed in zinc phosphide but not yet explained. The basic understanding provided reinvigorates the potential use of earth-abundant II-V semiconductors in photovoltaic technology. Moreover, the transferrable nanoscale growth approaches have the potential to be applied to other material systems, as they mitigate the constraints of substrate-material combinations causing interface defects.
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Affiliation(s)
- Simon Escobar Steinvall
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
- Center
for Analysis and Synthesis and NanoLund, Lund University, Box 124, 221 00 Lund, Sweden
- (S.E.S.)
| | - Elias Z. Stutz
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Rajrupa Paul
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Mahdi Zamani
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Jean-Baptiste Leran
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Mirjana Dimitrievska
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Anna Fontcuberta i Morral
- Laboratory
of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
- Institute
of Physics, Ecole Polytechnique Fédérale
de Lausanne, 1015 Lausanne, Switzerland
- (A.F.M.)
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23
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Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration. MATERIALS 2022; 15:ma15072543. [PMID: 35407877 PMCID: PMC8999517 DOI: 10.3390/ma15072543] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/10/2022] [Revised: 03/25/2022] [Accepted: 03/28/2022] [Indexed: 12/04/2022]
Abstract
In order to use III–V compound semiconductors as active channel materials in advanced electronic and quantum devices, it is important to achieve a good epitaxial growth on silicon substrates. As a first step toward this, we report on the selective-area growth of GaP/InGaP/InP/InAsP buffer layer nanotemplates on GaP substrates which are closely lattice-matched to silicon, suitable for the integration of in-plane InAs nanowires. Scanning electron microscopy reveals a perfect surface selectivity and uniform layer growth inside 150 and 200 nm large SiO2 mask openings. Compositional and structural characterization of the optimized structure performed by transmission electron microscopy shows the evolution of the major facet planes and allows a strain distribution analysis. Chemically uniform layers with well-defined heterointerfaces are obtained, and the topmost InAs layer is free from any dislocation. Our study demonstrates that a growth sequence of thin layers with progressively increasing lattice parameters is effective to efficiently relax the strain and eventually obtain high quality in-plane InAs nanowires on large lattice-mismatched substrates.
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24
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Zhang L, Li X, Cheng S, Shan C. Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures. MATERIALS 2022; 15:ma15051917. [PMID: 35269147 PMCID: PMC8911728 DOI: 10.3390/ma15051917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 02/23/2022] [Accepted: 02/24/2022] [Indexed: 12/02/2022]
Abstract
III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.
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Affiliation(s)
| | - Xing Li
- Correspondence: (X.L.); (C.S.)
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25
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Spadaro MC, Escobar Steinvall S, Dzade NY, Martí-Sánchez S, Torres-Vila P, Stutz EZ, Zamani M, Paul R, Leran JB, Fontcuberta I Morral A, Arbiol J. Rotated domains in selective area epitaxy grown Zn 3P 2: formation mechanism and functionality. NANOSCALE 2021; 13:18441-18450. [PMID: 34751695 PMCID: PMC8900489 DOI: 10.1039/d1nr06190a] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2021] [Accepted: 10/21/2021] [Indexed: 05/28/2023]
Abstract
Zinc phosphide (Zn3P2) is an ideal absorber candidate for solar cells thanks to its direct bandgap, earth-abundance, and optoelectronic characteristics, albeit it has been insufficiently investigated due to limitations in the fabrication of high-quality material. It is possible to overcome these factors by obtaining the material as nanostructures, e.g. via the selective area epitaxy approach, enabling additional strain relaxation mechanisms and minimizing the interface area. We demonstrate that Zn3P2 nanowires grow mostly defect-free when growth is oriented along the [100] and [110] of the crystal, which is obtained in nanoscale openings along the [110] and [010] on InP(100). We detect the presence of two stable rotated crystal domains that coexist in the structure. They are due to a change in the growth facet, which originates either from the island formation and merging in the initial stages of growth or lateral overgrowth. These domains have been visualized through 3D atomic models and confirmed with image simulations of the atomic scale electron micrographs. Density functional theory simulations describe the rotated domains' formation mechanism and demonstrate their lattice-matched epitaxial relation. In addition, the energies of the shallow states predicted closely agree with transition energies observed by experimental studies and offer a potential origin for these defect transitions. Our study represents an important step forward in the understanding of Zn3P2 and thus for the realisation of solar cells to respond to the present call for sustainable photovoltaic technology.
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Affiliation(s)
- Maria Chiara Spadaro
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, 08193, Spain.
| | - Simon Escobar Steinvall
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Nelson Y Dzade
- School of Chemistry, Cardiff University, Main Building, Park Place, CF10 3AT Cardiff, UK
- Department of Energy and Mineral Engineering, Pennsylvania State University, University Park, PA 16802, USA
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, 08193, Spain.
| | - Pol Torres-Vila
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, 08193, Spain.
| | - Elias Z Stutz
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Mahdi Zamani
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Rajrupa Paul
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Jean-Baptiste Leran
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland.
- Institute of Physics, Faculty of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, 08193, Spain.
- ICREA, Pg. Lluís Companys 23, 08010, Barcelona, Catalonia, Spain
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26
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Fabrication of Superconducting Nanowires Using the Template Method. NANOMATERIALS 2021; 11:nano11081970. [PMID: 34443801 PMCID: PMC8398988 DOI: 10.3390/nano11081970] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/05/2021] [Revised: 07/25/2021] [Accepted: 07/28/2021] [Indexed: 01/26/2023]
Abstract
The fabrication and characterization of superconducting nanowires fabricated by the anodic aluminium oxide (AAO) template technique has been reviewed. This templating method was applied to conventional metallic superconductors, as well as to several high-temperature superconductors (HTSc). For filling the templates with superconducting material, several different techniques have been applied in the literature, including electrodeposition, sol-gel techniques, sputtering, and melting. Here, we discuss the various superconducting materials employed and the results obtained. The arising problems in the fabrication process and the difficulties concerning the separation of the nanowires from the templates are pointed out in detail. Furthermore, we compare HTSc nanowires prepared by AAO templating and electrospinning with each other, and give an outlook to further research directions.
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Khan SA, Stampfer L, Mutas T, Kang JH, Krogstrup P, Jespersen TS. Multiterminal Quantized Conductance in InSb Nanocrosses. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2100078. [PMID: 34075631 DOI: 10.1002/adma.202100078] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2021] [Revised: 03/15/2021] [Indexed: 06/12/2023]
Abstract
By studying the time-dependent axial and radial growth of InSb nanowires (NWs), the conditions for the synthesis of single-crystalline InSb nanocrosses (NCs) by molecular beam epitaxy are mapped. Low-temperature electrical measurements of InSb NC devices with local gate control on individual terminals exhibit quantized conductance and are used to probe the spatial distribution of the conducting channels. Tuning to a situation where the NC junction is connected by few-channel quantum point contacts in the connecting NW terminals, it is shown that transport through the junction is ballistic except close to pinch-off. Combined with a new concept for shadow-epitaxy of patterned superconductors on NCs, the structures reported here show promise for the realization of non-trivial topological states in multi-terminal Josephson junctions.
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Affiliation(s)
- Sabbir A Khan
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Timo Mutas
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Jung-Hyun Kang
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Peter Krogstrup
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
| | - Thomas S Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, 2100, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building, Lyngby, 310, 2800, Denmark
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28
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Ben-Zvi R, Bar-Elli O, Oron D, Joselevich E. Polarity-dependent nonlinear optics of nanowires under electric field. Nat Commun 2021; 12:3286. [PMID: 34078896 PMCID: PMC8172856 DOI: 10.1038/s41467-021-23488-z] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/04/2020] [Accepted: 04/29/2021] [Indexed: 11/09/2022] Open
Abstract
Polar materials display a series of interesting and widely exploited properties owing to the inherent coupling between their fixed electric dipole and any action that involves a change in their charge distribution. Among these properties are piezoelectricity, ferroelectricity, pyroelectricity, and the bulk photovoltaic effect. Here we report the observation of a related property in this series, where an external electric field applied parallel or anti-parallel to the polar axis of a crystal leads to an increase or decrease in its second-order nonlinear optical response, respectively. This property of electric-field-modulated second-harmonic generation (EFM-SHG) is observed here in nanowires of the polar crystal ZnO, and is exploited as an analytical tool to directly determine by optical means the absolute direction of their polarity, which in turn provides important information about their epitaxy and growth mechanism. EFM-SHG may be observed in any type of polar nanostructures and used to map the absolute polarity of materials at the nanoscale. Finding dipole orientation of nanostructures is a challenge. Here the authors report a method to determine the sign of the polarity of a single nanowire using electric-field-modulated second-harmonic generation from surface-guided ZnO nanowire.
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Affiliation(s)
- Regev Ben-Zvi
- Departments of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel
| | - Omri Bar-Elli
- Departments of Physics of Complex Systems, Weizmann Institute of Science, Rehovot, Israel
| | - Dan Oron
- Departments of Physics of Complex Systems, Weizmann Institute of Science, Rehovot, Israel.
| | - Ernesto Joselevich
- Departments of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel.
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29
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Wang N, Wong WW, Yuan X, Li L, Jagadish C, Tan HH. Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100263. [PMID: 33856732 DOI: 10.1002/smll.202100263] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2021] [Revised: 03/08/2021] [Indexed: 06/12/2023]
Abstract
There is a strong demand for III-V nanostructures of different geometries and in the form of interconnected networks for quantum science applications. This can be achieved by selective area epitaxy (SAE) but the understanding of crystal growth in these complicated geometries is still insufficient to engineer the desired shape. Here, the shape evolution and crystal structure of InP nanostructures grown by SAE on InP substrates of different orientations are investigated and a unified understanding to explain these observations is established. A strong correlation between growth direction and crystal phase is revealed. Wurtzite (WZ) and zinc-blende (ZB) phases form along <111>A and <111>B directions, respectively, while crystal phase remains the same along other low-index directions. The polarity induced crystal structure difference is explained by thermodynamic difference between the WZ and ZB phase nuclei on different planes. Growth from the openings is essentially determined by pattern confinement and minimization of the total surface energy, regardless of substrate orientations. A novel type-II WZ/ZB nanomembrane homojunction array is obtained by tailoring growth directions through alignment of the openings along certain crystallographic orientations. The understanding in this work lays the foundation for the design and fabrication of advanced III-V semiconductor devices based on complex geometrical nanostructures.
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Affiliation(s)
- Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Wei Wen Wong
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Xiaoming Yuan
- Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, 410083, P. R. China
| | - Li Li
- Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
- ARC Centre of Excellence for Transformative Meta-Optical System, Research School of Physics, The Australian National University, Canberra, ACT 2601, Australia
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30
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Seidl J, Gluschke JG, Yuan X, Tan HH, Jagadish C, Caroff P, Micolich AP. Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins. ACS NANO 2021; 15:7226-7236. [PMID: 33825436 DOI: 10.1021/acsnano.1c00483] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We report on the postgrowth shaping of free-standing two-dimensional (2D) InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabrication. We use a citric acid-based wet etch that enables complex shapes, for example, van der Pauw cloverleaf structures, with patterning resolution down to 150 nm as well as partial thinning of the nanofin to improve local gate response. We exploit the high sensitivity of the cloverleaf structures to transport anisotropy to address the fundamental question of whether there is a measurable transport anisotropy arising from wurtzite/zincblende polytypism in 2D InAs nanostructures. We demonstrate a mobility anisotropy of order 2-4 at room temperature arising from polytypic stacking faults in our nanofins. Our work highlights a key materials consideration for devices featuring self-assembled 2D III-V nanostructures using advanced epitaxy methods.
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Affiliation(s)
- Jakob Seidl
- School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Jan G Gluschke
- School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Xiaoming Yuan
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - H Hoe Tan
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Chennupati Jagadish
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Philippe Caroff
- ARC Centre of Excellence for Transformative Meta-Optical Systems, Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Adam P Micolich
- School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
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31
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Dubrovskii VG, Kim W, Piazza V, Güniat L, Fontcuberta I Morral A. Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon. NANO LETTERS 2021; 21:3139-3145. [PMID: 33818097 DOI: 10.1021/acs.nanolett.1c00349] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approach in which self-assembly is limited to reduced regions on a patterned silicon substrate. While nanowires grow with a wide distribution of diameters, we note a mostly binary occurrence of crystal phases. Self-catalyzed GaAs nanowires form in either a wurtzite or zincblende phase in the same growth run. Quite surprisingly, thicker nanowires are wurtzite and thinner nanowires are zincblende, while the common view predicts the reverse trend. We relate this phenomenon to the influx of Ga adatoms by surface diffusion, which results in different contact angles of Ga droplets. We demonstrate the wurtzite phase of thick GaAs NWs up to 200 nm in diameter in the Au-free approach, which has not been achieved so far to our knowledge.
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Affiliation(s)
- Vladimir G Dubrovskii
- Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia
| | - Wonjong Kim
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Valerio Piazza
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Lucas Güniat
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
- Institute of Physics, Faculty of Basic Sciences, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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32
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Goktas NI, Dubrovskii VG, LaPierre RR. Conformal Growth of Radial InGaAs Quantum Wells in GaAs Nanowires. J Phys Chem Lett 2021; 12:1275-1283. [PMID: 33497239 DOI: 10.1021/acs.jpclett.0c03712] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
GaAs-InGaAs-GaAs core-shell-shell nanowire (NW) structures were grown by gas source molecular beam epitaxy using the selective-area, self-assisted, vapor-liquid-solid method. The structural, morphological, and optical properties of the NWs were examined for different growth conditions of the InGaAs shell. With increasing In concentration of the InGaAs shell, the growth transitioned from preferential deposition at the NW base to the Stranski-Krastanov growth mode where InGaAs islands formed along the NW length. This trend is explained within a nucleation model where there is a critical In flux below which the conformal growth is suppressed and the shell forms only at the NW base. Low growth temperature produced a more uniform In distribution along the NW length but resulted in quenching of the photoluminescence (PL) emission. Alternatively, reducing the shell thickness and increasing the V/III flux ratio resulted in conformal InGaAs shell growth and quantum dot-like PL emission. Our results indicate a pathway toward the conditions for conformal InGaAs shell growth required for satisfactory optoelectronic performance.
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Affiliation(s)
- Nebile Isik Goktas
- Department of Engineering Physics, McMaster University, Hamilton, ON L8S 4L7, Canada
| | - Vladimir G Dubrovskii
- Department of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia
| | - Ray R LaPierre
- Department of Engineering Physics, McMaster University, Hamilton, ON L8S 4L7, Canada
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33
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Escobar Steinvall S, Stutz EZ, Paul R, Zamani M, Dzade NY, Piazza V, Friedl M, de Mestral V, Leran JB, Zamani RR, Fontcuberta I Morral A. Towards defect-free thin films of the earth-abundant absorber zinc phosphide by nanopatterning. NANOSCALE ADVANCES 2021; 3:326-332. [PMID: 36131749 PMCID: PMC9418067 DOI: 10.1039/d0na00841a] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2020] [Accepted: 11/15/2020] [Indexed: 05/28/2023]
Abstract
Large-scale deployment of thin-film photovoltaics will be facilitated through earth-abundant components. Herein, selective area epitaxy and lateral overgrowth epitaxy are explored for the growth of zinc phosphide (Zn3P2), a promising earth-abundant absorber. The ideal growth conditions are elucidated, and the nucleation of single-crystal nanopyramids that subsequently evolve towards coalesced thin-films is demonstrated. The zinc phosphide pyramids exhibit room temperature bandgap luminescence at 1.53 eV, indicating a high-quality material. The electrical properties of zinc phosphide and the junction with the substrate are assessed by conductive atomic force microscopy on n-type, p-type and intrinsic substrates. The measurements are consistent with the p-type characteristic of zinc phosphide. Overall, this constitutes a new, and transferrable, approach for the controlled and tunable growth of high-quality zinc phosphide, a step forward in the quest for earth-abundant photovoltaics.
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Affiliation(s)
- Simon Escobar Steinvall
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Elias Z Stutz
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Rajrupa Paul
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Mahdi Zamani
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Nelson Y Dzade
- School of Chemistry, Cardiff University Main Building, Park Place CF10 3AT Cardiff UK
| | - Valerio Piazza
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Martin Friedl
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Virginie de Mestral
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Jean-Baptiste Leran
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Reza R Zamani
- Centre Inderdisciplinaire de Microscopie Électronique, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
- Institute of Physics, École Polytechnique Fédérale de Lausanne 1015 Lausanne Switzerland
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Khan SA, Lampadaris C, Cui A, Stampfer L, Liu Y, Pauka SJ, Cachaza ME, Fiordaliso EM, Kang JH, Korneychuk S, Mutas T, Sestoft JE, Krizek F, Tanta R, Cassidy MC, Jespersen TS, Krogstrup P. Highly Transparent Gatable Superconducting Shadow Junctions. ACS NANO 2020; 14:14605-14615. [PMID: 32396328 DOI: 10.1021/acsnano.0c02979] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Gate-tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single-crystalline InAs, InSb, and InAs1-xSbx semiconductor nanowires with epitaxial Al, Sn, and Pb superconductors and in situ shadowed junctions in a single-step molecular beam epitaxy process. We investigate correlations between fabrication parameters, junction morphologies, and electronic transport properties of the junctions and show that the examined in situ shadowed junctions are of significantly higher quality than the etched junctions. By varying the edge sharpness of the shadow junctions, we show that the sharpest edges yield the highest junction transparency for all three examined semiconductors. Further, critical supercurrent measurements reveal an extraordinarily high ICRN, close to the KO-2 limit. This study demonstrates a promising engineering path toward reliable gate-tunable superconducting qubits.
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Affiliation(s)
- Sabbir A Khan
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Charalampos Lampadaris
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Ajuan Cui
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Yu Liu
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Sebastian J Pauka
- Microsoft Quantum Sydney, The University of Sydney, Sydney, NSW 2006, Australia
| | - Martin E Cachaza
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | | | - Jung-Hyun Kang
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Svetlana Korneychuk
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Timo Mutas
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Joachim E Sestoft
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Filip Krizek
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Rawa Tanta
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Maja C Cassidy
- Microsoft Quantum Sydney, The University of Sydney, Sydney, NSW 2006, Australia
| | - Thomas S Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Peter Krogstrup
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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35
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Zeng H, Yu X, Fonseka HA, Boras G, Jurczak P, Wang T, Sanchez AM, Liu H. Preferred growth direction of III-V nanowires on differently oriented Si substrates. NANOTECHNOLOGY 2020; 31:475708. [PMID: 32885789 DOI: 10.1088/1361-6528/abafd7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
One of the nanowire (NW) characteristics is its preferred elongation direction. Here, we investigated the impact of Si substrate crystal orientation on the growth direction of GaAs NWs. We first studied the self-catalyzed GaAs NW growth on Si (111) and Si (001) substrates. SEM observations show GaAs NWs on Si (001) are grown along four <111> directions without preference on one or some of them. This non-preferential NW growth on Si (001) is morphologically in contrast to the extensively reported vertical <111> preferred GaAs NW growth on Si (111) substrates. We propose a model based on the initial condition of an ideal Ga droplet formation on Si substrates and the surface free energy calculation which takes into account the dangling bond surface density for different facets. This model provides further understanding of the different preferences in the growth of GaAs NWs along selected <111> directions depending on the Si substrate orientation. To verify the prevalence of the model, NWs were grown on Si (311) substrates. The results are in good agreement with the three-dimensional mapping of surface free energy by our model. This general model can also be applied to predictions of NW preferred growth directions by the vapor-liquid-solid growth mode on other group IV and III-V substrates.
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Affiliation(s)
- Haotian Zeng
- Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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36
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Bürger JC, Gutsch S, Zacharias M. Transition from freestanding SnO 2 nanowires to laterally aligned nanowires with a simulation-based experimental design. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2020; 11:843-853. [PMID: 32551209 PMCID: PMC7277887 DOI: 10.3762/bjnano.11.69] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/19/2020] [Accepted: 05/07/2020] [Indexed: 06/11/2023]
Abstract
In this study, we used simulations as a guide for experiments in order to switch freestanding nanowire growth to a laterally aligned growth mode. By means of finite element simulations, we determined that a higher volumetric flow and a reduced process pressure will result in a preferred laterally aligned nanowire growth. Furthermore, increasing the volumetric flow leads to a higher species dilution. Based on our numerical results, we were able to successfully grow laterally aligned SnO2 nanowires out of gold film edges and gold nanoparticles on a-plane sapphire substrates. In our experiments a horizontal 2-zone tube furnace was used. The generation of Sn gas was achieved by a carbothermal reduction of SnO2 powder. However, we observed no elongation of the nanowire length with an increase of the process time. Nevertheless, an alternating gas exchange between an inert gas (Ar) and an oxygen-containing process atmosphere yielded an elongation of the laterally aligned nanowires, indicating that the nanowire growth takes place in a transient period of the gas exchange.
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Affiliation(s)
- Jasmin-Clara Bürger
- Laboratory for Nanotechnology, Department of Microsystems Engineering (IMTEK), University of Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany
| | - Sebastian Gutsch
- Laboratory for Nanotechnology, Department of Microsystems Engineering (IMTEK), University of Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany
| | - Margit Zacharias
- Laboratory for Nanotechnology, Department of Microsystems Engineering (IMTEK), University of Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany
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37
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Friedl M, Cerveny K, Huang C, Dede D, Samani M, Hill MO, Morgan N, Kim W, Güniat L, Segura-Ruiz J, Lauhon LJ, Zumbühl DM, Fontcuberta I Morral A. Remote Doping of Scalable Nanowire Branches. NANO LETTERS 2020; 20:3577-3584. [PMID: 32315191 DOI: 10.1021/acs.nanolett.0c00517] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier density and mean free path in these devices is key for all of these applications. Factors that affect the mean free path include scattering by surfaces, donors, defects, and impurities. Here, we demonstrate how to reduce donor scattering in InGaAs nanowire networks by adopting a remote-doping strategy. Low-temperature magnetotransport measurements indicate weak anti-localization-a signature of strong spin-orbit interaction-across a nanowire Y-junction. This work serves as a blueprint for achieving remotely doped, ultraclean, and scalable nanowire networks for quantum technologies.
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Affiliation(s)
- Martin Friedl
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Kris Cerveny
- Department of Physics, University of Basel, Basel, Switzerland
| | - Chunyi Huang
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | - Didem Dede
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Mohammad Samani
- Department of Physics, University of Basel, Basel, Switzerland
| | - Megan O Hill
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | - Nicholas Morgan
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Wonjong Kim
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Lucas Güniat
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | | | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | | | - Anna Fontcuberta I Morral
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
- Institute of Physics, Faculty of Basic Sciences, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
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38
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Gao F, Wang JH, Watzinger H, Hu H, Rančić MJ, Zhang JY, Wang T, Yao Y, Wang GL, Kukučka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang JJ. Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1906523. [PMID: 32105375 DOI: 10.1002/adma.201906523] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2019] [Revised: 12/30/2019] [Indexed: 06/10/2023]
Abstract
Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site-controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top-down nanofabrication and bottom-up self-assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain-relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin-orbit coupling, with a spin-orbit length similar to that of III-V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon.
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Affiliation(s)
- Fei Gao
- National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jian-Huan Wang
- National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hannes Watzinger
- Institute of Science and Technology Austria, Am Campus 1, Klosterneuburg, 3400, Austria
| | - Hao Hu
- Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an, 710054, China
| | - Marko J Rančić
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH-4056, Switzerland
| | - Jie-Yin Zhang
- National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physics, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ting Wang
- National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physics, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Yuan Yao
- National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Gui-Lei Wang
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Josip Kukučka
- Institute of Science and Technology Austria, Am Campus 1, Klosterneuburg, 3400, Austria
| | - Lada Vukušić
- Institute of Science and Technology Austria, Am Campus 1, Klosterneuburg, 3400, Austria
| | - Christoph Kloeffel
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH-4056, Switzerland
| | - Daniel Loss
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, CH-4056, Switzerland
| | - Feng Liu
- Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA
| | - Georgios Katsaros
- Institute of Science and Technology Austria, Am Campus 1, Klosterneuburg, 3400, Austria
| | - Jian-Jun Zhang
- National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physics, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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39
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Shang Q, Li C, Zhang S, Liang Y, Liu Z, Liu X, Zhang Q. Enhanced Optical Absorption and Slowed Light of Reduced-Dimensional CsPbBr 3 Nanowire Crystal by Exciton-Polariton. NANO LETTERS 2020; 20:1023-1032. [PMID: 31917588 DOI: 10.1021/acs.nanolett.9b04175] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Metallic halide perovskites are promising for low-cost, low-consumption, flexible optoelectronic devices. However, research is lacking on light propagation and dielectric behaviors as fundamental properties for optoelectronic perovskite applications, particularly the mechanism supporting a strong light-matter interaction and the different properties of low-dimensional structures from their bulk counterparts. We use spatially resolved photoluminescence (SRPL) spectroscopy to explore light propagation and measure the refractive index of CsPbBr3 nanowires (NWs). Owing to strong exciton-photon interactions, light is guided as an exciton-polariton inside the NWs at room temperature. Remarkable spatial dispersion is confirmed, in which both the real and imaginary parts of the refractive index increase dramatically approaching exciton resonance, thus slowing light and enhancing absorption, respectively. Reducing the NWs dimension increases exciton-photon coupling and the exciton fraction, increasing the light absorption coefficient and group index 5- and 3-fold, respectively, relative to those of bulk films and slowing the light group velocity by ∼74%. Furthermore, dispersive absorption induces an energy redshift to the propagating PL at 4.1-5.5 meV μm-1 until the bottleneck region. These findings clarify light-matter interaction in confined perovskite structures to improve their optoelectronic device performance.
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Affiliation(s)
- Qiuyu Shang
- Department of Materials Science and Engineering, College of Engineering , Peking University , Beijing 100871 , P. R. China
| | - Chun Li
- Department of Materials Science and Engineering, College of Engineering , Peking University , Beijing 100871 , P. R. China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center of Excellence for Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , P. R. China
| | - Shuai Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center of Excellence for Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , P. R. China
| | - Yin Liang
- Department of Materials Science and Engineering, College of Engineering , Peking University , Beijing 100871 , P. R. China
| | - Zhen Liu
- Department of Materials Science and Engineering, College of Engineering , Peking University , Beijing 100871 , P. R. China
| | - Xinfeng Liu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center of Excellence for Nanoscience , National Center for Nanoscience and Technology , Beijing 100190 , P. R. China
| | - Qing Zhang
- Department of Materials Science and Engineering, College of Engineering , Peking University , Beijing 100871 , P. R. China
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40
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Raya AM, Friedl M, Martí-Sánchez S, Dubrovskii VG, Francaviglia L, Alén B, Morgan N, Tütüncüoglu G, Ramasse QM, Fuster D, Llorens JM, Arbiol J, Fontcuberta I Morral A. GaAs nanoscale membranes: prospects for seamless integration of III-Vs on silicon. NANOSCALE 2020; 12:815-824. [PMID: 31830194 DOI: 10.1039/c9nr08453c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templates for the scalable integration of nanowire networks on III-V substrates. Here, we demonstrate how GaAs nanoscale membranes can be seamlessly integrated on silicon by controlling the density of nuclei in the initial stages of growth. We also correlate the absence or presence of defects with the existence of a single or multiple nucleation regime for the single membranes. Certain defects exhibit well-differentiated spectroscopic features that we identify with cathodoluminescence and micro-photoluminescence techniques. Overall, this work presents a new approach for the seamless integration of compound semiconductors on silicon.
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Affiliation(s)
- Andrés M Raya
- Laboratoire des Matériaux Semiconducteurs, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, EPFL, 1015 Lausanne, Switzerland.
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41
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Abstract
Surface-guided growth of planar nanowires offers the possibility to control their position, direction, length, and crystallographic orientation and to enable their large-scale integration into practical devices. However, understanding of and control over planar nanowire growth are still limited. Here, we study theoretically and experimentally the growth kinetics of surface-guided planar nanowires. We present a model that considers different kinetic pathways of material transport into the planar nanowires. Two limiting regimes are established by the Gibbs-Thomson effect for thinner nanowires and by surface diffusion for thicker nanowires. By fitting the experimental data for the length-diameter dependence to the kinetic model, we determine the power exponent, which represents the dimensionality of surface diffusion, and results to be different for planar vs. nonplanar nanowires. Excellent correlation between the model predictions and the data is obtained for surface-guided Au-catalyzed ZnSe and ZnS nanowires growing on both flat and faceted sapphire surfaces. These data are compared with those of nonplanar nanowire growth under similar conditions. The results indicate that, whereas nonplanar growth is usually dominated by surface diffusion of precursor adatoms over the nanowire walls, planar growth is dominated by surface diffusion over the substrate. This mechanism of planar nanowire growth can be extended to a broad range of material-substrate combinations for higher control toward large-scale integration into practical devices.
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42
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Aseev P, Wang G, Binci L, Singh A, Martí-Sánchez S, Botifoll M, Stek LJ, Bordin A, Watson JD, Boekhout F, Abel D, Gamble J, Van Hoogdalem K, Arbiol J, Kouwenhoven LP, de Lange G, Caroff P. Ballistic InSb Nanowires and Networks via Metal-Sown Selective Area Growth. NANO LETTERS 2019; 19:9102-9111. [PMID: 31730748 DOI: 10.1021/acs.nanolett.9b04265] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Selective area growth is a promising technique to realize semiconductor-superconductor hybrid nanowire networks, potentially hosting topologically protected Majorana-based qubits. In some cases, however, such as the molecular beam epitaxy of InSb on InP or GaAs substrates, nucleation and selective growth conditions do not necessarily overlap. To overcome this challenge, we propose a metal-sown selective area growth (MS SAG) technique, which allows decoupling selective deposition and nucleation growth conditions by temporarily isolating these stages. It consists of three steps: (i) selective deposition of In droplets only inside the mask openings at relatively high temperatures favoring selectivity, (ii) nucleation of InSb under Sb flux from In droplets, which act as a reservoir of group III adatoms, done at relatively low temperatures, favoring nucleation of InSb, and (iii) homoepitaxy of InSb on top of the formed nucleation layer under a simultaneous supply of In and Sb fluxes at conditions favoring selectivity and high crystal quality. We demonstrate that complex InSb nanowire networks of high crystal and electrical quality can be achieved this way. We extract mobility values of 10 000-25 000 cm2 V-1 s-1 consistently from field-effect and Hall mobility measurements across single nanowire segments as well as wires with junctions. Moreover, we demonstrate ballistic transport in a 440 nm long channel in a single nanowire under a magnetic field below 1 T. We also extract a phase-coherent length of ∼8 μm at 50 mK in mesoscopic rings.
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Affiliation(s)
- Pavel Aseev
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
| | - Guanzhong Wang
- QuTech and Kavli Institute of NanoScience , Delft University of Technology , Lorentzweg 1 , 2600 GA Delft , The Netherlands
| | - Luca Binci
- QuTech and Kavli Institute of NanoScience , Delft University of Technology , Lorentzweg 1 , 2600 GA Delft , The Netherlands
| | - Amrita Singh
- QuTech and Kavli Institute of NanoScience , Delft University of Technology , Lorentzweg 1 , 2600 GA Delft , The Netherlands
| | - Sara Martí-Sánchez
- CSIC and BIST , Catalan Institute of Nanoscience and Nanotechnology (ICN2) , Campus UAB , 08193 Bellaterra, Barcelona , Catalonia , Spain
| | - Marc Botifoll
- CSIC and BIST , Catalan Institute of Nanoscience and Nanotechnology (ICN2) , Campus UAB , 08193 Bellaterra, Barcelona , Catalonia , Spain
| | - Lieuwe J Stek
- QuTech and Kavli Institute of NanoScience , Delft University of Technology , Lorentzweg 1 , 2600 GA Delft , The Netherlands
| | - Alberto Bordin
- QuTech and Kavli Institute of NanoScience , Delft University of Technology , Lorentzweg 1 , 2600 GA Delft , The Netherlands
| | - John D Watson
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
| | - Frenk Boekhout
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
- QuTech and Netherlands Organization for Applied Scientific Research (TNO) , Stieltjesweg 1 , 2628 CK Delft , The Netherlands
| | - Daniel Abel
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
| | - John Gamble
- Microsoft Quantum , 1 Redmond Way , Redmond , Washington 98052 , United States
| | | | - Jordi Arbiol
- CSIC and BIST , Catalan Institute of Nanoscience and Nanotechnology (ICN2) , Campus UAB , 08193 Bellaterra, Barcelona , Catalonia , Spain
- ICREA , Pg. Lluí s Companys 23 , 08010 Barcelona , Catalonia , Spain
| | - Leo P Kouwenhoven
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
- QuTech and Kavli Institute of NanoScience , Delft University of Technology , Lorentzweg 1 , 2600 GA Delft , The Netherlands
| | - Gijs de Lange
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
| | - Philippe Caroff
- Microsoft Quantum Lab Delft , Lorentzweg 1 , 2628 CJ Delft , Netherlands
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43
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Bollani M, Salvalaglio M, Benali A, Bouabdellaoui M, Naffouti M, Lodari M, Corato SD, Fedorov A, Voigt A, Fraj I, Favre L, Claude JB, Grosso D, Nicotra G, Mio A, Ronda A, Berbezier I, Abbarchi M. Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits. Nat Commun 2019; 10:5632. [PMID: 31822679 PMCID: PMC6904683 DOI: 10.1038/s41467-019-13371-3] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/28/2019] [Accepted: 11/06/2019] [Indexed: 11/09/2022] Open
Abstract
Large-scale, defect-free, micro- and nano-circuits with controlled inter-connections represent the nexus between electronic and photonic components. However, their fabrication over large scales often requires demanding procedures that are hardly scalable. Here we synthesize arrays of parallel ultra-long (up to 0.75 mm), monocrystalline, silicon-based nano-wires and complex, connected circuits exploiting low-resolution etching and annealing of thin silicon films on insulator. Phase field simulations reveal that crystal faceting and stabilization of the wires against breaking is due to surface energy anisotropy. Wires splitting, inter-connections and direction are independently managed by engineering the dewetting fronts and exploiting the spontaneous formation of kinks. Finally, we fabricate field-effect transistors with state-of-the-art trans-conductance and electron mobility. Beyond the first experimental evidence of controlled dewetting of patches featuring a record aspect ratio of \documentclass[12pt]{minimal}
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\begin{document}$$\sim$$\end{document}~mm long nano-wires, our method constitutes a distinct and promising approach for the deterministic implementation of atomically-smooth, mono-crystalline electronic and photonic circuits. Fabricating defect-free micro- and nano-circuits over large scales with controlled interconnections remains a challenge. Here, Bollani et al. show a dewetting strategy for engineering arrays of parallel Si-based nanowires up to 0.75 mm and complex interconnected circuits of monocrystalline Si on a chip.
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Affiliation(s)
- Monica Bollani
- Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS, Via Anzani 42, 22100, Como, Italy.
| | - Marco Salvalaglio
- Institute of Scientific Computing, Technische Universität Dresden, 01062, Dresden, Germany.
| | - Abdennacer Benali
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - Mohammed Bouabdellaoui
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.,Laboratory of Physics of Condensed Matter and Renewable Energy, Faculty of Sciences and Technology, Hassan II University of Casablanca, 146 Mohammedia, Casablanca, Morocco
| | - Meher Naffouti
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.,Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, 5019, Monastir, Tunisia
| | - Mario Lodari
- Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS, Via Anzani 42, 22100, Como, Italy
| | - Stefano Di Corato
- Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS, Via Anzani 42, 22100, Como, Italy
| | - Alexey Fedorov
- Istituto di Fotonica e Nanotecnologie-Consiglio Nazionale delle Ricerche, Laboratory for Nanostructure Epitaxy and Spintronics on Silicon, LNESS, Via Anzani 42, 22100, Como, Italy
| | - Axel Voigt
- Institute of Scientific Computing, Technische Universität Dresden, 01062, Dresden, Germany.,Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
| | - Ibtissem Fraj
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.,Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, 5019, Monastir, Tunisia
| | - Luc Favre
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - Jean Benoit Claude
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - David Grosso
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | | | - Antonio Mio
- CNR-IMM, Zona Industriale Strada VIII, 5, 95121, Catania, Italy
| | - Antoine Ronda
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - Isabelle Berbezier
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France
| | - Marco Abbarchi
- Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France.
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Barrigón E, Heurlin M, Bi Z, Monemar B, Samuelson L. Synthesis and Applications of III-V Nanowires. Chem Rev 2019; 119:9170-9220. [PMID: 31385696 DOI: 10.1021/acs.chemrev.9b00075] [Citation(s) in RCA: 75] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/27/2023]
Abstract
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-dimensional examples, have developed into one of the most intensely studied fields of science and technology. The subarea described in this review is compound semiconductor nanowires, with the materials covered limited to III-V materials (like GaAs, InAs, GaP, InP,...) and III-nitride materials (GaN, InGaN, AlGaN,...). We review the way in which several innovative synthesis methods constitute the basis for the realization of highly controlled nanowires, and we combine this perspective with one of how the different families of nanowires can contribute to applications. One reason for the very intense research in this field is motivated by what they can offer to main-stream semiconductors, by which ultrahigh performing electronic (e.g., transistors) and photonic (e.g., photovoltaics, photodetectors or LEDs) technologies can be merged with silicon and CMOS. Other important aspects, also covered in the review, deals with synthesis methods that can lead to dramatic reduction of cost of fabrication and opportunities for up-scaling to mass production methods.
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Affiliation(s)
- Enrique Barrigón
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Magnus Heurlin
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden.,Sol Voltaics AB , Scheelevägen 63 , 223 63 Lund , Sweden
| | - Zhaoxia Bi
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Bo Monemar
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
| | - Lars Samuelson
- Division of Solid State Physics and NanoLund , Lund University , Box 118, 22100 Lund , Sweden
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45
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Seidl J, Gluschke JG, Yuan X, Naureen S, Shahid N, Tan HH, Jagadish C, Micolich AP, Caroff P. Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy. NANO LETTERS 2019; 19:4666-4677. [PMID: 31241966 DOI: 10.1021/acs.nanolett.9b01703] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report a method for growing rectangular InAs nanofins with deterministic length, width, and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrication. A key goal was to regain a spatial dimension for device design compared to nanowires, while retaining the benefits of bottom-up epitaxial growth. The transferred nanofins were made into devices featuring multiple contacts for Hall effect and four-terminal resistance studies, as well as a global back-gate and nanoscale local top-gates for density control. Hall studies give a 3D electron density 2.5-5 × 1017 cm-3, corresponding to an approximate surface accumulation layer density 3-6 × 1012 cm-2 that agrees well with previous studies of InAs nanowires. We obtain Hall mobilities as high as 1200 cm2/(V s), field-effect mobilities as high as 4400 cm2/(V s), and clear quantum interference structure at temperatures as high as 20 K. Our devices show excellent prospects for fabrication into more complicated devices featuring multiple ohmic contacts, local gates, and possibly other functional elements, for example, patterned superconductor contacts, that may make them attractive options for future quantum information applications.
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Affiliation(s)
- J Seidl
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - J G Gluschke
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - X Yuan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra ACT 2601 , Australia
- Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, School of Physics and Electronics , Central South University , 932 South Lushan Road , Changsha , Hunan 410083 , P.R. China
| | - S Naureen
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra ACT 2601 , Australia
- IRnova AB , Electrum 236 , Kista SE-164 40 , Sweden
| | - N Shahid
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra ACT 2601 , Australia
- Finisar Sweden AB , Bruttovägen 7 , Järfälla SE-175 43 , Sweden
| | - H H Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra ACT 2601 , Australia
| | - C Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra ACT 2601 , Australia
| | - A P Micolich
- School of Physics , University of New South Wales , Sydney NSW 2052 , Australia
| | - P Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra ACT 2601 , Australia
- Microsoft Quantum Lab Delft , Delft University of Technology , 2600 GA Delft , The Netherlands
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46
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Schroth P, Al Humaidi M, Feigl L, Jakob J, Al Hassan A, Davtyan A, Küpers H, Tahraoui A, Geelhaar L, Pietsch U, Baumbach T. Impact of the Shadowing Effect on the Crystal Structure of Patterned Self-Catalyzed GaAs Nanowires. NANO LETTERS 2019; 19:4263-4271. [PMID: 31150261 DOI: 10.1021/acs.nanolett.9b00380] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The growth of regular arrays of uniform III-V semiconductor nanowires is a crucial step on the route toward their application-relevant large-scale integration onto the Si platform. To this end, not only does optimal vertical yield, length, and diameter uniformity have to be engineered, but also, control over the nanowire crystal structure has to be achieved. Depending on the particular application, nanowire arrays with varying area density are required for optimal device efficiency. However, the nanowire area density substantially influences the nanowire growth and presents an additional challenge for nanowire device engineering. We report on the simultaneous in situ X-ray investigation of regular GaAs nanowire arrays with different area density during self-catalyzed vapor-liquid-solid growth on Si by molecular-beam epitaxy. Our results give novel insight into selective-area growth and demonstrate that shadowing of the Ga flux, occurring in dense nanowire arrays, has a crucial impact on the evolution of nanowire crystal structure. We observe that the onset of Ga flux shadowing, dependent on array pitch and nanowire length, is accompanied by an increase of the wurtzite formation rate. Our results moreover reveal the paramount role of the secondary reflected Ga flux for VLS NW growth (specifically, that flux that is reflected directly into the liquid Ga droplet).
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Affiliation(s)
- Philipp Schroth
- Solid State Physics, Department of Physics , University of Siegen , Adolf-Reichwein-Straße 2 , D-57068 Siegen , Germany
- Laboratory for Applications of Synchrotron Radiation , Karlsruhe Institute of Technology , Kaiserstraße 12 , D-76131 Karlsruhe , Germany
- Institute for Photon Science and Synchrotron Radiation , Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1 , D-76344 Eggenstein-Leopoldshafen , Germany
| | - Mahmoud Al Humaidi
- Solid State Physics, Department of Physics , University of Siegen , Adolf-Reichwein-Straße 2 , D-57068 Siegen , Germany
| | - Ludwig Feigl
- Institute for Photon Science and Synchrotron Radiation , Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1 , D-76344 Eggenstein-Leopoldshafen , Germany
| | - Julian Jakob
- Laboratory for Applications of Synchrotron Radiation , Karlsruhe Institute of Technology , Kaiserstraße 12 , D-76131 Karlsruhe , Germany
- Institute for Photon Science and Synchrotron Radiation , Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1 , D-76344 Eggenstein-Leopoldshafen , Germany
| | - Ali Al Hassan
- Solid State Physics, Department of Physics , University of Siegen , Adolf-Reichwein-Straße 2 , D-57068 Siegen , Germany
| | - Arman Davtyan
- Solid State Physics, Department of Physics , University of Siegen , Adolf-Reichwein-Straße 2 , D-57068 Siegen , Germany
| | - Hanno Küpers
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Abbes Tahraoui
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Ullrich Pietsch
- Solid State Physics, Department of Physics , University of Siegen , Adolf-Reichwein-Straße 2 , D-57068 Siegen , Germany
| | - Tilo Baumbach
- Laboratory for Applications of Synchrotron Radiation , Karlsruhe Institute of Technology , Kaiserstraße 12 , D-76131 Karlsruhe , Germany
- Institute for Photon Science and Synchrotron Radiation , Karlsruhe Institute of Technology , Hermann-von-Helmholtz-Platz 1 , D-76344 Eggenstein-Leopoldshafen , Germany
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47
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Zamani RR, Arbiol J. Understanding semiconductor nanostructures via advanced electron microscopy and spectroscopy. NANOTECHNOLOGY 2019; 30:262001. [PMID: 30812017 DOI: 10.1088/1361-6528/ab0b0a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Transmission electron microscopy (TEM) offers an ample range of complementary techniques which are able to provide essential information about the physical, chemical and structural properties of materials at the atomic scale, and hence makes a vast impact on our understanding of materials science, especially in the field of semiconductor one-dimensional (1D) nanostructures. Recent advancements in TEM instrumentation, in particular aberration correction and monochromation, have enabled pioneering experiments in complex nanostructure material systems. This review aims to address these understandings through the applications of the methodology for semiconductor nanostructures. It points out various electron microscopy techniques, in particular scanning TEM (STEM) imaging and spectroscopy techniques, with their already-employed or potential applications on 1D nanostructured semiconductors. We keep the main focus of the paper on the electronic and optoelectronic properties of such semiconductors, and avoid expanding it further. In the first part of the review, we give a brief introduction to each of the STEM-based techniques, without detailed elaboration, and mention the recent technological and conceptual developments which lead to novel characterization methodologies. For further reading, we refer the audience to a handful of papers in the literature. In the second part, we highlight the recent examples of application of the STEM methodology on the 1D nanostructure semiconductor materials, especially III-V, II-V, and group IV bare and heterostructure systems. The aim is to address the research questions on various physical properties and introduce solutions by choosing the appropriate technique that can answer the questions. Potential applications will also be discussed, the ones that have already been used for bulk and 2D materials, and have shown great potential and promise for 1D nanostructure semiconductors.
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Affiliation(s)
- Reza R Zamani
- Department of Physics, Chalmers University of Technology, Gothenburg, SE-41296, Sweden. Interdisciplinary Centre for Electron Microscopy (CIME), École Polytechnique Fédérale de Lausanne (EPFL), Lausanne 1015, Switzerland
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48
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Wang N, Yuan X, Zhang X, Gao Q, Zhao B, Li L, Lockrey M, Tan HH, Jagadish C, Caroff P. Shape Engineering of InP Nanostructures by Selective Area Epitaxy. ACS NANO 2019; 13:7261-7269. [PMID: 31180645 DOI: 10.1021/acsnano.9b02985] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Greater demand for III-V nanostructures with more sophisticated geometries other than nanowires is expected because of the recent intensive investigation of nanowire networks that show great potential in all-optical logic gates, nanoelectronics, and quantum computing. Here, we demonstrate highly uniform arrays of InP nanostructures with tunable shapes, such as membrane-, prism-, and ring-like shapes, which can be simultaneously grown by selective area epitaxy. Our in-depth investigation of shape evolution confirms that the shape is essentially determined by pattern confinement and the minimization of total surface energy. After growth optimization, all of the different InP nanostructures grown under the same growth conditions show perfect wurtzite structure regardless of the geometry and strong and homogeneous photon emission. This work expands the research field in terms of producing nanostructures with the desired shapes beyond the limits of nanowires to satisfy various requirements for nanoelectronics, optoelectronics, and quantum device applications.
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Affiliation(s)
- Naiyin Wang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Xiaoming Yuan
- Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, School of Physics and Electronics , Central South University , 932 South Lushan Road , Changsha , Hunan 410083 , P. R. China
| | - Xu Zhang
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
- National Center for International Joint Research of Electronic Materials and Systems, Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering , Zhengzhou University , Zhengzhou , Henan 450052 , P. R. China
| | - Qian Gao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Bijun Zhao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Li Li
- Australian National Fabrication Facility ACT Node, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Mark Lockrey
- Australian National Fabrication Facility ACT Node, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Chennupati Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Philippe Caroff
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
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49
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Numerical Study on Mie Resonances in Single GaAs Nanomembranes. NANOMATERIALS 2019; 9:nano9060856. [PMID: 31195647 PMCID: PMC6630972 DOI: 10.3390/nano9060856] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/14/2019] [Revised: 06/03/2019] [Accepted: 06/04/2019] [Indexed: 11/17/2022]
Abstract
GaAs nanomembranes grown by selective area epitaxy are novel structures. The high refractive index of GaAs makes them good candidates for nanoantennas. We numerically studied the optical modal structure of the resonator. The nanomembrane geometry introduces a strong light-polarization dependence. The scattering is dominated by an electric dipole contribution for polarization along the nanomembrane long dimension and by a magnetic dipole contribution in the orthogonal direction. The dependence on the geometry of the resonances close to the GaAs band gap was modeled by a single coefficient. It describes the resonance shifts against up-to 40% changes in length, height, and width. We showed that the nanomembranes exhibited field enhancement, far-field directionality, and tunability with the GaAs band gap. All these elements confirm their great potential as nanoantennas.
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50
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Ben-Zvi R, Burrows H, Schvartzman M, Bitton O, Pinkas I, Kaplan-Ashiri I, Brontvein O, Joselevich E. In-Plane Nanowires with Arbitrary Shapes on Amorphous Substrates by Artificial Epitaxy. ACS NANO 2019; 13:5572-5582. [PMID: 30995393 PMCID: PMC6994061 DOI: 10.1021/acsnano.9b00538] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/21/2019] [Accepted: 04/17/2019] [Indexed: 06/09/2023]
Abstract
The challenge of nanowire assembly is still one of the major obstacles toward their efficient integration into functional systems. One strategy to overcome this obstacle is the guided growth approach, in which the growth of in-plane nanowires is guided by epitaxial and graphoepitaxial relations with the substrate to yield dense arrays of aligned nanowires. This method relies on crystalline substrates which are generally expensive and incompatible with silicon-based technologies. In this work, we expand the guided growth approach into noncrystalline substrates and demonstrate the guided growth of horizontal nanowires along straight and arbitrarily shaped amorphous nanolithographic open guides on silicon wafers. Nanoimprint lithography is used as a high-throughput method for the fabrication of the high-resolution guiding features. We first grow five different semiconductor materials (GaN, ZnSe, CdS, ZnTe, and ZnO) along straight ridges and trenches, demonstrating the generality of this method. Through crystallographic analysis we find that despite the absence of any epitaxial relations with the substrate, the nanowires grow as single crystals in preferred crystallographic orientations. To further expand the guided growth approach beyond straight nanowires, GaN and ZnSe were grown also along curved and kinked configurations to form different shapes, including sinusoidal and zigzag-shaped nanowires. Photoluminescence and cathodoluminescence were used as noninvasive tools to characterize the sine wave-shaped nanowires. We discuss the similarities and differences between in-plane nanowires grown by epitaxy/graphoepitaxy and artificial epitaxy in terms of generality, morphology, crystallinity, and optical properties.
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Affiliation(s)
- Regev Ben-Zvi
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Hadassah Burrows
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Mark Schvartzman
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Ora Bitton
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Iddo Pinkas
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Ifat Kaplan-Ashiri
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Olga Brontvein
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Ernesto Joselevich
- Departments
of Materials and Interfaces and Department of Chemical Research Support, Weizmann Institute of Science, Rehovot 7610001, Israel
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