1
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Jin G, Kim SH, Han HJ. Synthesis and Future Electronic Applications of Topological Nanomaterials. Int J Mol Sci 2023; 25:400. [PMID: 38203574 PMCID: PMC10779379 DOI: 10.3390/ijms25010400] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 12/19/2023] [Accepted: 12/22/2023] [Indexed: 01/12/2024] Open
Abstract
Over the last ten years, the discovery of topological materials has opened up new areas in condensed matter physics. These materials are noted for their distinctive electronic properties, unlike conventional insulators and metals. This discovery has not only spurred new research areas but also offered innovative approaches to electronic device design. A key aspect of these materials is now that transforming them into nanostructures enhances the presence of surface or edge states, which are the key components for their unique electronic properties. In this review, we focus on recent synthesis methods, including vapor-liquid-solid (VLS) growth, chemical vapor deposition (CVD), and chemical conversion techniques. Moreover, the scaling down of topological nanomaterials has revealed new electronic and magnetic properties due to quantum confinement. This review covers their synthesis methods and the outcomes of topological nanomaterials and applications, including quantum computing, spintronics, and interconnects. Finally, we address the materials and synthesis challenges that need to be resolved prior to the practical application of topological nanomaterials in advanced electronic devices.
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Affiliation(s)
- Gangtae Jin
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA;
| | - Seo-Hyun Kim
- Department of Environment and Energy Engineering, Sungshin Women’s University, Seoul 01133, Republic of Korea;
| | - Hyeuk-Jin Han
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA;
- Department of Environment and Energy Engineering, Sungshin Women’s University, Seoul 01133, Republic of Korea;
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2
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Singlet and triplet Cooper pair splitting in hybrid superconducting nanowires. Nature 2022; 612:448-453. [PMID: 36418399 DOI: 10.1038/s41586-022-05352-2] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/17/2022] [Accepted: 09/15/2022] [Indexed: 11/25/2022]
Abstract
In most naturally occurring superconductors, electrons with opposite spins form Cooper pairs. This includes both conventional s-wave superconductors such as aluminium, as well as high-transition-temperature, d-wave superconductors. Materials with intrinsic p-wave superconductivity, hosting Cooper pairs made of equal-spin electrons, have not been conclusively identified, nor synthesized, despite promising progress1-3. Instead, engineered platforms where s-wave superconductors are brought into contact with magnetic materials have shown convincing signatures of equal-spin pairing4-6. Here we directly measure equal-spin pairing between spin-polarized quantum dots. This pairing is proximity-induced from an s-wave superconductor into a semiconducting nanowire with strong spin-orbit interaction. We demonstrate such pairing by showing that breaking a Cooper pair can result in two electrons with equal spin polarization. Our results demonstrate controllable detection of singlet and triplet pairing between the quantum dots. Achieving such triplet pairing in a sequence of quantum dots will be required for realizing an artificial Kitaev chain7-9.
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3
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Li W, Mu J, Liu ZH, Huang S, Pan D, Chen Y, Wang JY, Zhao J, Xu HQ. Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages. NANOSCALE 2022; 14:14029-14037. [PMID: 36048093 DOI: 10.1039/d2nr03459j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We report the realization of a coupled quantum dot (QD) system containing two single QDs made in two adjacent InAs nanowires. One QD (sensor QD) was used as a charge sensor to detect the charge state transitions in the other QD (target QD). We investigated the effect of the tunneling barrier asymmetry of the target QD on the detection visibility of the charge state transitions in the target QD. The charge stability diagrams of the target QD under different configurations of barrier-gate voltages were simultaneously measured via the direct signals of electron transport through the target QD and via the detection signals of the charge state transitions in the target QD revealed by the sensor QD. We find that the complete Coulomb diamond boundaries of the target QD and the transport processes involving the excited states in the target QD can be observed in the transconductance signals of the sensor QD only when the tunneling barriers of the target QD are nearly symmetric. These observations were explained by analyzing the effect of the ratio of the two tunneling rates on the electron transport processes through the target QD. Our results imply that it is important to consider the symmetry of the tunnel couplings when constructing a charge sensor integrated QD device.
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Affiliation(s)
- Weijie Li
- Beijing Key Laboratory of Quantum Devices and Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Jingwei Mu
- Beijing Key Laboratory of Quantum Devices and Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Zhi-Hai Liu
- Beijing Key Laboratory of Quantum Devices and Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Shaoyun Huang
- Beijing Key Laboratory of Quantum Devices and Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
| | - Yuanjie Chen
- Beijing Key Laboratory of Quantum Devices and Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
| | - Ji-Yin Wang
- Beijing Key Laboratory of Quantum Devices and Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
| | - H Q Xu
- Beijing Key Laboratory of Quantum Devices and Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics, Peking University, Beijing 100871, China.
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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4
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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5
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Zhang T, Liu H, Gao F, Xu G, Wang K, Zhang X, Cao G, Wang T, Zhang J, Hu X, Li HO, Guo GP. Anisotropic g-Factor and Spin-Orbit Field in a Germanium Hut Wire Double Quantum Dot. NANO LETTERS 2021; 21:3835-3842. [PMID: 33914549 DOI: 10.1021/acs.nanolett.1c00263] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes and manipulating spin-orbit qubits. Here, from the strongly anisotropic leakage current in the spin blockade regime for a double dot, we extract the full g-tensor and find that the spin-orbit field is in plane with an azimuthal angle of 59° to the axis of the nanowire. The direction of the spin-orbit field indicates a strong spin-orbit interaction along the nanowire, which may have originated from the interface inversion asymmetry in Ge hut wires. We also demonstrate two different spin relaxation mechanisms for the holes in the Ge hut wire double dot: spin-flip co-tunneling to the leads, and spin-orbit interaction within the double dot. These results help establish feasibility of a Ge-based quantum processor.
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Affiliation(s)
- Ting Zhang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - He Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Fei Gao
- Institute of Physics and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing 100190, China
| | - Gang Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Ke Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xin Zhang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Gang Cao
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Ting Wang
- Institute of Physics and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing 100190, China
| | - Jianjun Zhang
- Institute of Physics and CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, Beijing 100190, China
| | - Xuedong Hu
- Department of Physics, University at Buffalo, SUNY, Buffalo, New York 14260, United States
| | - Hai-Ou Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Guo-Ping Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Origin Quantum Computing Company Limited, Hefei, Anhui 230026, China
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6
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Mu J, Huang S, Liu ZH, Li W, Wang JY, Pan D, Huang GY, Chen Y, Zhao J, Xu HQ. A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire. NANOSCALE 2021; 13:3983-3990. [PMID: 33595588 DOI: 10.1039/d0nr08655j] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Quantum dots (QDs) made from semiconductors are among the most promising platforms for the development of quantum computing and simulation chips, and they have the advantages of high density integration and compatibility with the standard semiconductor chip fabrication technology compared to other platforms. However, the development of a highly tunable semiconductor multiple QD system still remains a major challenge. Here, we demonstrate the realization of a highly tunable linear quadruple QD (QQD) in a narrow bandgap semiconductor InAs nanowire via a fine finger gate technique. The QQD is studied by electron transport measurements in the linear response regime. Characteristic two-dimensional charge stability diagrams containing four groups of resonant current lines of different slopes are obtained for the QQD. It is shown that these current lines arise from and can be individually assigned to resonant electron transport through the energy levels of different QDs. Benefitting from the excellent gate tunability, we also demonstrate the tuning of the QQD to regimes where the energy levels of two QDs, three QDs and all four QDs are energetically in resonance, respectively, with the Fermi level of the source and drain contacts. A capacitance network model is developed for the linear QQD and the simulated charge stability diagrams based on this model show good agreement with the experiments. Our work provides solid experimental evidence that narrow bandgap semiconductor nanowire multiple QDs could be used as a versatile platform to achieve integrated qubits for quantum computing and to perform quantum simulations of complex many-body systems.
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Affiliation(s)
- Jingwei Mu
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China and Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China.
| | - Shaoyun Huang
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
| | - Zhi-Hai Liu
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
| | - Weijie Li
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China and Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China.
| | - Ji-Yin Wang
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. and Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Guang-Yao Huang
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
| | - Yuanjie Chen
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. and Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - H Q Xu
- Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China and Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China. and Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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7
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Wang X, Huang S, Wang JY, Pan D, Zhao J, Xu HQ. A charge sensor integration to tunable double quantum dots on two neighboring InAs nanowires. NANOSCALE 2021; 13:1048-1054. [PMID: 33393583 DOI: 10.1039/d0nr07115c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A single quantum dot serving as a charge sensor is integrated to scalable double quantum dots using local top finger-gate techniques on two neighboring pure-phase InAs nanowires. The single dot built on one nanowire capacitively couples one of the double dots constructed on another nanowire via a metal bridge gate. The charge occupation states of double quantum dots can be accurately monitored by the sensor even in a few-electron regime in which transport tunneling current through the double dots vanishes. In the tunneling spectroscopy of double dots, electron inter dot tunneling process is absent; however, it can be illustrated by the sensor in terms of a transconductance line between the two closest triple points. Thus, tunnel coupling strength between the double dots is quantitatively extracted from the detectable charge transition. The highly tunable multiple quantum dots with integrated charge sensors on InAs nanowires could be an essential building block for quantum information processing technology.
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Affiliation(s)
- Xumin Wang
- Beijing Key laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, China.
| | - Shaoyun Huang
- Beijing Key laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, China.
| | - Ji-Yin Wang
- Beijing Key laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, China.
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - H Q Xu
- Beijing Key laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, China.
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8
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Bugu S, Ozaydin F, Ferrus T, Kodera T. Preparing Multipartite Entangled Spin Qubits via Pauli Spin Blockade. Sci Rep 2020; 10:3481. [PMID: 32103078 PMCID: PMC7044317 DOI: 10.1038/s41598-020-60299-6] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/30/2019] [Accepted: 02/07/2020] [Indexed: 11/27/2022] Open
Abstract
Preparing large-scale multi-partite entangled states of quantum bits in each physical form such as photons, atoms or electrons for each specific application area is a fundamental issue in quantum science and technologies. Here, we propose a setup based on Pauli spin blockade (PSB) for the preparation of large-scale W states of electrons in a double quantum dot (DQD). Within the proposed scheme, two W states of n and m electrons respectively can be fused by allowing each W state to transfer a single electron to each quantum dot. The presence or absence of PSB then determines whether the two states have fused or not, leading to the creation of a W state of n + m - 2 electrons in the successful case. Contrary to previous works based on quantum dots or nitrogen-vacancy centers in diamond, our proposal does not require any photon assistance. Therefore the 'complex' integration and tuning of an optical cavity is not a necessary prerequisite. We also show how to improve the success rate in our setup. Because requirements are based on currently available technology and well-known sensing techniques, our scheme can directly contribute to the advances in quantum technologies and, in particular in solid state systems.
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Affiliation(s)
- Sinan Bugu
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, Japan.
| | - Fatih Ozaydin
- Institute for International Strategy, Tokyo International University, 1-13-1 Matoba-kita, Kawagoe, Saitama, 350-1197, Japan
- Department of Information Technologies, Isik University, Sile, Istanbul, 34980, Turkey
| | - Thierry Ferrus
- Hitachi Cambridge Laboratory, J. J. Thomson Avenue, CB3 0HE, Cambridge, United Kingdom
| | - Tetsuo Kodera
- Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, Japan
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9
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Dorsch S, Dalelkhan B, Fahlvik S, Burke AM. Side-gated, enhancement mode, InAs nanowire double quantum dot devices-toward controlling transverse electric fields in spin-transport measurements. NANOTECHNOLOGY 2019; 30:144002. [PMID: 30641514 DOI: 10.1088/1361-6528/aafe5a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
A double quantum dot system with a definitive transverse electric field in the plane of the sample is defined by combining a facile side-gating technique with enhancement mode InAs nanowires. Positive bias on the plunger gates enhance quantum dot segments along the nanowire, negative bias on barrier gates deplete regions, and situating gates biased at opposite polarities on opposing sides of the nanowire allows an electric field to be engineered. With sufficiently biased barrier regions stable bias triangle features are observed in the weak interdot coupling regime. The singlet-triplet energy splitting Δ ST in Pauli spin-blockaded features is studied as a function of an external magnetic field applied perpendicular to the sample plane. We interpret an apparent absence of mixing between singlet and triplet states as an indication that the spin-orbit field is oriented out of the sample plane due to the induced electric field. Finally, we discuss the potential of combining advanced gating architectures with enhancement mode nanowires to control the orientation of the spin-orbit field-a prospect that could enable multiple, nanowire-based spin-qubits to be operated on a single chip with a fixed-angle external magnetic field applied.
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Affiliation(s)
- S Dorsch
- Solid State Physics and NanoLund, Lund University, SE-221 00 Lund, Sweden
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10
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Iorio A, Rocci M, Bours L, Carrega M, Zannier V, Sorba L, Roddaro S, Giazotto F, Strambini E. Vectorial Control of the Spin-Orbit Interaction in Suspended InAs Nanowires. NANO LETTERS 2019; 19:652-657. [PMID: 30398889 DOI: 10.1021/acs.nanolett.8b02828] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental studies into the nature and the orientation of the SOI vector in these wires remain limited despite being of upmost importance. Typical devices feature the nanowires placed on top of a substrate which modifies the SOI vector and spoils the intrinsic symmetries of the system. In this work, we report experimental results on suspended InAs nanowires, in which the wire symmetries are fully preserved and clearly visible in transport measurements. Using a vectorial magnet, the nontrivial evolution of weak antilocalization (WAL) is tracked through all 3D space, and both the spin-orbit length l SO and coherence length lφ are determined as a function of the magnetic field magnitude and direction. Studying the angular maps of the WAL signal, we demonstrate that the average SOI within the nanowire is isotropic and that our findings are consistent with a semiclassical quasi-1D model of WAL adapted to include the geometrical constraints of the nanostructure. Moreover, by acting on properly designed side gates, we apply an external electric field introducing an additional vectorial Rashba spin-orbit component whose strength can be controlled by external means. These results give important hints on the intrinsic nature of suspended nanowire and can be interesting for the field of spintronics as well as for the manipulation of Majorana bound states in devices based on hybrid semiconductors.
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Affiliation(s)
- A Iorio
- Dipartimento di Fisica , Università di Pisa , Largo Bruno Pontecorvo 3 , I-56127 Pisa , Italy
| | - M Rocci
- NEST , Istituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
| | - L Bours
- NEST , Istituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
| | - M Carrega
- NEST , Istituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
| | - V Zannier
- NEST , Istituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
| | - L Sorba
- NEST , Istituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
| | - S Roddaro
- Dipartimento di Fisica , Università di Pisa , Largo Bruno Pontecorvo 3 , I-56127 Pisa , Italy
- NEST , Istituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
| | - F Giazotto
- NEST , Istituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
| | - E Strambini
- NEST , Istituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy
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11
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Radhakrishnan S, Das D, Deng L, Sudeep PM, Colas G, de Los Reyes CA, Yazdi S, Chu CW, Martí AA, Tiwary CS, Filleter T, Singh AK, Ajayan PM. An Insight into the Phase Transformation of WS 2 upon Fluorination. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1803366. [PMID: 30239044 DOI: 10.1002/adma.201803366] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2018] [Revised: 08/20/2018] [Indexed: 06/08/2023]
Abstract
The transformation from semiconducting to metallic phase, accompanied by a structural transition in 2D transition metal dichalcogenides has attracted the attention of the researchers worldwide. The unconventional structural transformation of fluorinated WS2 (FWS2 ) into the 1T phase is described. The energy difference between the two phases debugs this transition, as fluorination enhances the stability of 1T FWS2 and makes it energetically favorable at higher F concentration. Investigation of the electronic and optical nature of FWS2 is supplemented by possible band structures and bandgap calculations. Magnetic centers in the 1T phase appear in FWS2 possibly due to the introduction of defect sites. A direct consequence of the phase transition and associated increase in interlayer spacing is a change in friction behavior. Friction force microscopy is used to determine this effect of functionalization accompanied phase transformation.
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Affiliation(s)
- Sruthi Radhakrishnan
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Deya Das
- Materials Research Center, Indian Institute of Science, Bangalore, 560012, India
| | - Liangzi Deng
- Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX, 77004, USA
| | - Parambath M Sudeep
- Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, ON, M5S3G8, Canada
| | - Guillaume Colas
- Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, ON, M5S3G8, Canada
| | | | - Sadegh Yazdi
- Renewable and Sustainable Energy Institute, University of Colorado, Boulder, CO, 80309, USA
| | - Ching Wu Chu
- Texas Center for Superconductivity and Department of Physics, University of Houston, Houston, TX, 77004, USA
- Lawrence Berkeley National Lab, Berkeley, CA, 94720, USA
| | - Angel A Martí
- Department of Chemistry, Rice University, Houston, TX, 77005, USA
| | - Chandra Sekhar Tiwary
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
- Metallurgical and Materials Engineering, Indian Institute of Technology Kharagpur, West Bengal, 721302, India
| | - Tobin Filleter
- Department of Mechanical and Industrial Engineering, University of Toronto, Toronto, ON, M5S3G8, Canada
| | - Abhishek K Singh
- Materials Research Center, Indian Institute of Science, Bangalore, 560012, India
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
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