Stretchable Polymer Dielectrics for Low-Voltage-Driven Field-Effect Transistors

Stretchable Electronics with Strain-Resistive Performance

Stretchable electronics have attracted tremendous attention amongst academic and industrial communities due to their prospective applications in personal healthcare, human-activity monitoring, artificial skins, wearable displays, human-machine interfaces, etc. Other than mechanical robustness, stable performances under complex strains in these devices that are not for strain sensing are equally important for practical applications. Here, a comprehensive summarization of recent advances in stretchable electronics with strain-resistive performance is presented. First, detailed overviews of intrinsically strain-resistive stretchable materials, including conductors, semiconductors, and insulators, are given. Then, systematic representations of advanced structures, including helical, serpentine, meshy, wrinkled, and kirigami-based structures, for strain-resistive performance are summarized. Next, stretchable arrays and circuits with strain-resistive performance, that integrate multiple functionalities and enable complex behaviors, are introduced. This review presents a detailed overview of recent progress in stretchable electronics with strain-resistive performances and provides a guideline for the future development of stretchable electronics.

Engineering the Dielectric Constants of Polymers: From Molecular to Mesoscopic Scales

Polymers are essential components of modern-day materials and are widely used in various fields. The dielectric constant, a key physical parameter, plays a fundamental role in the light-, electricity-, and magnetism-related applications of polymers, such as dielectric and electrical insulation, battery and photovoltaic fabrication, sensing and electrical contact, and signal transmission and communication. Over the past few decades, numerous efforts have been devoted to engineering the intrinsic dielectric constant of polymers, particularly by tailoring the induced and orientational polarization modes and ferroelectric domain engineering. Investigations into these methods have guided the rational design and on-demand preparation of polymers with desired dielectric constants. This review article exhaustively summarizes the dielectric constant engineering of polymers from molecular to mesoscopic scales, with emphasis on application-driven design and on-demand polymer synthesis rooted in polymer chemistry principles. Additionally, it explores the key polymer applications that can benefit from dielectric constant regulation and outlines the future prospects of this field.

Breaking the Trade-Off Between Polymer Dielectric Constant and Loss via Aluminum Oxo Macrocycle Dopants for High-Performance Neuromorphic Electronics

The dielectric layer is crucial in regulating the overall performance of field-effect transistors (FETs), the key component in central processing units, sensors, and displays. Despite considerable efforts being devoted to developing high-permittivity (k) dielectrics, limited progress is made due to the inherent trade-off between dielectric constant and loss. Here, a solution is presented by designing a monodispersed disk-shaped Ce-Al-O-macrocycle as a dopant in polymer dielectrics. The molecule features a central Ce(III) core connected with eight Al atoms through sixteen bridging hydroxyls and eight 3-aminophenyl peripheries. The incorporation of this macrocycle in polymer dielectrics results in an up to sevenfold increase in dielectric constants and up to 89% reduction in dielectric loss at low frequencies. Moreover, the leakage-current densities decrease, and the breakdown strengths are improved by 63%. Relying on the above merits, FETs bearing cluster-doped polymer dielectrics give near three-orders source-drain current increments while maintaining low-level leakage/off currents, resulting in much higher charge-carrier mobilities (up to 2.45 cm2  V-1  s-1 ) and on/off ratios. This cluster-doping strategy is generalizable and shows great promise for ultralow-power photoelectric synapses and neuromorphic retinas. This work successfully breaks the trade-off between dielectric constant and loss and offers a unique design for polymer composite dielectrics.

Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.

Neuromorphic sensorimotor loop embodied by monolithically integrated, low-voltage, soft e-skin

Artificial skin that simultaneously mimics sensory feedback and mechanical properties of natural skin holds substantial promise for next-generation robotic and medical devices. However, achieving such a biomimetic system that can seamlessly integrate with the human body remains a challenge. Through rational design and engineering of material properties, device structures, and system architectures, we realized a monolithic soft prosthetic electronic skin (e-skin). It is capable of multimodal perception, neuromorphic pulse-train signal generation, and closed-loop actuation. With a trilayer, high-permittivity elastomeric dielectric, we achieved a low subthreshold swing comparable to that of polycrystalline silicon transistors, a low operation voltage, low power consumption, and medium-scale circuit integration complexity for stretchable organic devices. Our e-skin mimics the biological sensorimotor loop, whereby a solid-state synaptic transistor elicits stronger actuation when a stimulus of increasing pressure is applied.

Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics

The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

Stretchable conductors for stretchable field-effect transistors and functional circuits

Stretchable electronics have received intense attention due to their broad application prospects in many areas, and can withstand large deformations and form close contact with curved surfaces. Stretchable conductors are vital components of stretchable electronic devices used in wearables, soft robots, and human-machine interactions. Recent advances in stretchable conductors have motivated basic scientific and technological research efforts. Here, we outline and analyse the development of stretchable conductors in transistors and circuits, and examine advances in materials, device engineering, and preparation technologies. We divide the existing approaches to constructing stretchable transistors with stretchable conductors into the following two types: geometric engineering and intrinsic stretchability engineering. Finally, we consider the challenges and outlook in this field for delivering stretchable electronics.

Artificial Tactile Recognition Enabled by Flexible Low-Voltage Organic Transistors and Low-Power Synaptic Electronics

The advancement of self-powered intelligent strain systems for human-computer interaction is crucial toward wearable and energy-saving applications. Simultaneously, lowering operating voltage and thus reducing power consumption are of particular interests. A brain-like smart synaptic hardware system is considered as a promising candidate for low-power, parallel computing and learning processes. However, the combination of low-voltage organic transistors and energy efficient smart synapse hardware systems driven by a tactile signal has been hindered by the limited materials and technology. Here, by employing an elastomeric copolymer poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) with a high HFP content of 25 mol %, flexible, low-voltage transistors (|V_G| ≤ 3 V) and a low energy consumption synapse ≤ 9.2 × 10^-17 J are devised simultaneously, along with the lowest quality factor (R = P_w × V_G, 2.76 × 10^-16 J V). Furthermore, based on the low voltage and low power consumption characteristics, flexible artificial tactile recognition system and Morse code recognition are established without any computing supporting. Mechanical flexibility, cycling stability, image contrast enhancement functions, and simulated pattern recognition accuracy of the multilayer perceptron neural network are also simulated. This work recommends a route of exploiting low voltage, low power consumption synaptic systems and smart human-machine interfaces with low energy loss based on flexible organic synaptic transistors.

Power-Efficient Gas-Sensing and Synaptic Diodes Based on Lateral Pentacene/a-IGZO PN Junctions

Function convergence of gas sensing and neuromorphic computing is attracting much research attention due to the promising potential in electronic olfactory, artificial intelligence, and internet of everything systems. However, the current neuromorphic gas-sensing systems are either realized via integration of gas detectors and neuromorphic devices or operating with three-terminal synaptic transistors at high voltages, leading to a rather high system complexity or power consumption. Herein, gas-modulated synaptic diodes with lateral structures are developed to converge sensing, processing, and storage functions into a single device. The lateral synaptic diode is based on a p-n junction of an organic semiconductor (OSC) and amorphous In-Ga-Zn-O, in which the upper OSC layer can directly interact with the gas molecules in the atmosphere. Typical synaptic behaviors triggered by ammonia, including inhibitory postsynaptic current and paired-pulse depression, are successfully demonstrated. Meanwhile, a low power consumption of 6.3 pJ per synaptic event has been achieved, which benefits from the simple device structure, the decent chemosensitivity of the OSC, and the low operation voltage. A simulated ammonia analysis in human exhaled breath is further conducted to explore the practical application of the synaptic diode. Therefore, this work provides a gas-modulated synaptic diode for circuit-compact and power-efficient artificial olfactory systems.

Recent Advances in High-Mobility and High-Stretchability Organic Field-Effect Transistors: From Materials, Devices to Applications

Stretchable organic field-effect transistors (OFETs) are one of the essential building blocks for next-generation wearable electronics due to the high stretchability of OFET well matching with the large deformation of human skin. In recent years, some significant progress of stretchable OFETs have already been made via the strategies of stretchable molecular design and geometry engineering. However, the main opportunity and challenge of stretchable OFETs is still to simultaneously improve their stretchability and mobility. This review covers the recent advances in the research of stretchable OFETs with high mobility. First, the core stretchable materials are summarized, including organic semiconductors, electrodes, dielectrics, and substrates. Second, the materials and healing mechanism of self-healing OFET are summarized in detail. Subsequently, their different configurations and the potential applications are summarized. Finally, an outlook of future research directions and challenges in this area is presented.

Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(p-xylylene) Derivatives

Inorganic materials such as SiO_x and SiN_x are commonly used as dielectric layers in thin-film transistors (TFTs), but recent advancements in TFT devices, such as inclusion in flexible electronics, require the development of novel types of dielectric layers. In this study, CVD-deposited poly(p-xylylene) (PPx)-based polymers were evaluated as alternative dielectric layers. CVD-deposited PPx can produce thin, conformal, and pinhole-free polymer layers on various surfaces, including oxides and metals, without interfacial defects. Three types of commercial polymers were successfully deposited on various substrates and exhibited stable dielectric properties under frequency and voltage sweeps. Additionally, TFTs with PPx as a dielectric material and an oxide semiconductor exhibited excellent device performance; a mobility as high as 22.72 cm²/(V s), which is the highest value among organic gate dielectric TFTs, to the best of our knowledge. Because of the low-temperature deposition process and its unprecedented mechanical flexibility, TFTs with CVD-deposited PPx were successfully fabricated on a flexible plastic substrate, exhibiting excellent durability over 10000 bending cycles. Finally, a custom-synthesized functionalized PPx was introduced into top-gated TFTs, demonstrating the possibility for expanding this concept to a wide range of chemistries with tunable gate dielectric layers.

Ultra-high drivability, high-mobility, low-voltage and high-integration intrinsically stretchable transistors

Realizing intrinsically stretchable transistors with high current drivability, high mobility, small feature size, low power and the potential for mass production is essential for advancing stretchable electronics a critical step forward. However, it is challenging to realize these requirements simultaneously due to the limitations of the existing fabrication technologies when integrating intrinsically stretchable materials into transistors. Here, we propose a removal-transfer-photolithography method (RTPM), combined with adopting poly(urea-urethane) (PUU) as a dielectric, to realize integratable intrinsically stretchable carbon nanotube thin-film transistors (IIS-CNT-TFTs). The realized IIS-CNT-TFTs achieve excellent electrical and mechanical properties simultaneously, showing high field-effect-mobility up to 221 cm2 V-1 s-1 and high current density up to 810 μA mm-1 at a low driving voltage of -1 V, which are both the highest values for intrinsically stretchable transistors today to the best of our knowledge. At the same time, the transistors can survive 2000 cycles of repeated stretching by 50%, indicating their promising applicability to stretchable circuits, displays, and wearable electronics. The achieved intrinsically stretchable thin-film transistors show higher electrical performance, higher stretching durability, and smaller feature size simultaneously compared with the state-of-the-art works, providing a novel solution to integratable intrinsically stretchable electronics. Besides, the proposed RTPM involves adopting removable sacrificial layers to protect the PDMS substrate and PUU dielectric during the photolithography and patterning steps, and finally removing the sacrificial layers to improve the electrical and mechanical performance. This method is generally applicable to further enhance the performance of the existing transistors and devices with a similar structure in soft electronics.

Facile Approach to Fabricating Stretchable Organic Transistors with Laser-Patterned Ag Nanowire Electrodes

Stretchable electronics are poised to revolutionize personal healthcare and robotics, where they enable distributed and conformal sensors. Transistors are fundamental building blocks of electronics, and there is a need to produce stretchable transistors using low-cost and scalable fabrication techniques. Here, we introduce a facile fabrication approach using laser patterning and transfer printing to achieve high-performance, solution-processed intrinsically stretchable organic thin-film transistors (OTFTs). The device consists of Ag nanowire (NW) electrodes, where the source and drain electrodes are patterned using laser ablation. The Ag NWs are then partially embedded in a poly(dimethylsiloxane) (PDMS) matrix. The electrodes are combined with a PDMS dielectric and polymer semiconductor, where the layers are individually transfer printed to complete the OTFT. Two polymer semiconductors, DPP-DTT and DPP-4T, are considered and show stable operation under the cyclic strain of 20 and 40%, respectively. The OTFTs maintain electrical performance by adopting a buckled structure after the first stretch-release cycle. The conformability and stretchability of the OTFT is also demonstrated by operating the transistor while adhered to a finger being flexed. The ability to pattern highly conductive Ag NW networks using laser ablation to pattern electrodes as well as interconnects provides a simple strategy to produce complex stretchable OTFT-based circuits.

Study on Intrinsic Stretchability of Diketopyrrolopyrrole-Based π-Conjugated Copolymers with Poly(acryl amide) Side Chains for Organic Field-Effect Transistors

The development of a π-conjugated polymer with hydrogen-bonding moieties has aroused great attention because of the improved molecular stacking and the hydrogen-bonding network. In this study, PDPPTVT (diketopyrrolopyrrole-thiophenevinylenethiophene) and PDPPSe (diketopyrrolopyrrole-selenophene) alkylated with a carbosilane (SiC8) side chain and poly(acryl amide) (PAM)-incorporated alkyl side chain were prepared, and their structure-performance and structure-stretchability correlation were evaluated. By incorporating the DPPTVT backbone and 0, 5, 10, or 20% PAM-incorporated alkyl side chain, the μ_h value could reach 2.0, 0.97, 0.74, and 0.42 cm² V^-1 s^-1, respectively (P1 to P4). The polymer with the PDPPSe backbone and 5% PAM-incorporated alkyl side-chain (P5) exhibited the maximum μ_h value of 0.96 cm² V^-1 s^-1. By extending the PAM moiety from the backbone with alkyl spacers, the solid-state packing and edge-on orientation can be properly maintained. Surprisingly, the PAM-incorporated alkyl side-chain can provide a hydrogen-bonding network serving as sacrificial bonding to mechanical deformation. Therefore, the relevant changes in the crystallographic parameters including the crystalline size and the in-plane π-π stacking distance with a 100% external strain were less than 4 and 0.8%, respectively, from P1 to P3. Therefore, P3 achieved an excellent stretchability while maintaining its molecular orientation and charge-transporting performance. Even with 100% external strain, P3 still provided an orthogonal μ_h over 0.1 cm² V^-1 s^-1. Moreover, by substituting the TVT moiety with the Se moiety, the ductility of the backbone can be further increased when the elastic modulus decreases from 0.80 to 0.36 GPa for P2 to P5. The achieved high μ_h retention is over 20% after 500 stretching-releasing cycles with a 60% external strain perpendicular to the channel direction for the polymer composed of PDPPSe and 5% PAM content. The results manifest that our newly designed DPP with the PAM-incorporated alkyl side chain provides a promising approach to promote the intrinsic stretchability of the π-conjugated polymers.

Preparation and Application of Organic-Inorganic Nanocomposite Materials in Stretched Organic Thin Film Transistors

High-transparency soluble polyimide with COOH and fluorine functional groups and TiO₂-SiO₂ composite inorganic nanoparticles with high dielectric constants were synthesized in this study. The polyimide and inorganic composite nanoparticles were further applied in the preparation of organic-inorganic hybrid high dielectric materials as the gate dielectric for a stretchable transistor. The optimal ratio of organic and inorganic components in the hybrid films was investigated. In addition, Jeffamine D2000 and polyurethane were added to the gate dielectric to improve the tensile properties of the organic thin film transistor (OTFT) device. PffBT4T-2OD was used as the semiconductor layer material and indium gallium liquid alloy as the upper electrode. Electrical property analysis demonstrated that the mobility could reach 0.242 cm²·V⁻¹·s⁻¹ at an inorganic content of 30 wt.%, and the switching current ratio was 9.04 × 10³. After Jeffamine D2000 and polyurethane additives were added, the mobility and switching current could be increased to 0.817 cm²·V⁻¹·s⁻¹ and 4.27 × 10⁵ for Jeffamine D2000 and 0.562 cm²·V⁻¹·s⁻¹ and 2.04 × 10⁵ for polyurethane, respectively. Additives also improved the respective mechanical properties. The stretching test indicated that the addition of polyurethane allowed the OTFT device to be stretched to 50%, and the electrical properties could be maintained after stretching 150 cycles.

Rubbery Electronics Fully Made of Stretchable Elastomeric Electronic Materials

Stretchable electronics outperform existing rigid and bulky electronics and benefit a wide range of species, including humans, machines, and robots, whose activities are associated with large mechanical deformation and strain. Due to the nonstretchable nature of most electronic materials, in particular semiconductors, stretchable electronics are mostly realized through the strategies of architectural engineering to accommodate mechanical stretching rather than imposing strain into the materials directly. On the other hand, recent development of stretchable electronics by creating them entirely from stretchable elastomeric electronic materials, i.e., rubbery electronics, suggests a feasible a venue. Rubbery electronics have gained increasing interest due to the unique advantages that they and their associated manufacturing technologies have offered. This work reviews the recent progress in developing rubbery electronics, including the crucial stretchable elastomeric materials of rubbery conductors, rubbery semiconductors, and rubbery dielectrics. Thereafter, various rubbery electronics such as rubbery transistors, integrated electronics, rubbery optoelectronic devices, and rubbery sensors are discussed.

Intrinsically stretchable all-carbon-nanotube transistors with styrene–ethylene–butylene–styrene as gate dielectrics integrated by photolithography-based process

In recent years, stretchable electronics have attracted great attention because of their broad application prospects such as in the field of wearable electronics, skin-like electronics, medical transplantation and human–machine interaction.

High-k polymeric gate insulators for organic field-effect transistors

Gate insulators play a role as important as that of the semiconductor in high performance OFETs, with a high on/off current ratio, low hysteresis, and device stability. The essential requirements for gate dielectrics include high capacitance, high dielectric breakdown strength, solution-processibility, and flexibility. In this paper we review progress in recent years in developing high-k gate polymeric insulators for modern organic electronic applications. After a general introduction to OFETs, three types of high-k polymeric gate insulating materials are enumerated in achieving high-quality OFETs, including polymer gate insulators, polymer-inorganic gate composites or bilayers, and ion gel electrolytes. Especially, we emphasize the significance, implementation and development of high-k polymeric gate insulators used in OFETs for future low voltage operated and flexible electronics. Finally, a brief summary and outlook are presented.

Polymer Electrolyte Blend Gate Dielectrics for High-Performance Ultrathin Organic Transistors: Toward Favorable Polymer Blend Miscibility and Reliability

We report on systematic mobility enhancements in electrolyte-gated organic field-effect transistors (OFETs) by thinning down the active layer and exploiting polymer solid-state electrolyte gate insulators (SEGIs). The SEGI is composed of homogeneous poly(vinylidene fluoride- co-hexafluoropropylene) [P(VDF-HFP)] polymer solution-ion gel blends of high areal capacitance of >10 μF cm^-2 at 1 Hz. By scaling up the poly(3-hexylthiophene) (P3HT) semiconducting layer by 1 order of magnitude (5-50 nm), an ultraviolet photoelectron spectroscopy examination reveals a downward vacuum-level shift generating a substantial hole injection barrier that originates from different interfacial dipole layer formations. The ultrathin (5.1 nm) P3HT FETs outperformed the other devices, exhibiting stable device characteristics with a highest field-effect mobility of >2 cm² V^-1 s^-1 (effective mobility of 0.83 ± 0.05 cm² V^-1 s^-1), on/off ratio of ∼10⁶, low threshold voltage of <-0.6 V, and low gate-leakage current levels of ∼10⁵ below the on-current levels in 10 μm channel length devices. We observed a positive threshold voltage shift in the P3HT/SEGI FETs with decreasing semiconductor thickness. The aforementioned mobility is at least 10 times greater than that of neat P(VDF-HFP) devices. The significant FET performance is attributed to a better insulator/semiconductor interface, efficient hole injection from the Au electrode resulting in a low contact resistance of <500 Ω  cm, and boosted charge-carrier densities in the transistor channel. This work demonstrates an excellent approach for carrier mobility enhancement and reliability assessment in low-voltage-operated electrolyte-gated OFETs.

Recent Advances in Transparent Electronics with Stretchable Forms

Advances in materials science and the desire for next-generation electronics have driven the development of stretchable and transparent electronics in the past decade. Novel applications, such as smart contact lenses and wearable sensors, have been introduced with stretchable and transparent form factors, requiring a deeper and wider exploration of materials and fabrication processes. In this regard, many research efforts have been dedicated to the development of mechanically stretchable, optically transparent materials and devices. Recent advances in stretchable and transparent electronics are discussed herein, with special emphasis on the development of stretchable and transparent materials, including substrates and electrodes. Several representative examples of applications enabled by stretchable and transparent electronics are presented, including sensors, smart contact lenses, heaters, and neural interfaces. The current challenges and opportunities for each type of stretchable and transparent electronics are also discussed.

Difluorobenzothiadiazole and Selenophene-Based Conjugated Polymer Demonstrating an Effective Hole Mobility Exceeding 5 cm2 V-1 s-1 with Solid-State Electrolyte Dielectric

We report synthesis of a new poly(4-(4,4-bis(2-ethylhexyl)-4 H-silolo[3,2- b:4,5- b']dithiophene-2-yl)-7-(4,4-bis(2-ethylhexyl)-6-(selenophene-2-yl)-4 H-silolo[3,2- b:4,5- b']dithiophene-2-yl)-5,6-difluorobenzo[ c][1,2,5]thiadiazole (PDFDSe) polymer based on planar 4,7-bis(4,4-bis(2-ethylhexyl)-4 H-silolo[3,2- b:4,5- b']dithiophen-2-yl)-5,6-difluorobenzo[ c][1,2,5]thiadiazole (DFD) moieties and selenophene linkages. The planar backboned PDFDSe polymer exhibits highest occupied molecular orbital and lowest unoccupied molecular orbital levels of -5.13 and -3.56 eV, respectively, and generates well-packed highly crystalline states in films with exclusive edge-on orientations. PDFDSe thin film was incorporated as a channel material in top-gate bottom-contact organic thin-film transistor with a solid-state electrolyte gate insulator (SEGI) composed of poly(vinylidene difluoride-trifluoroethylene)/poly(vinylidene fluoride- co-hexafluroropropylene)/1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, which exhibited a remarkably high hole mobility up to μ = 20.3 cm² V^-1 s^-1 corresponding to effective hole mobility exceeding 5 cm² V^-1 s^-1 and a very low threshold voltage of -1 V. These device characteristics are associated with the high carrier density in the semiconducting channel region, induced by the high capacitance of the SEGI layer. The excellent carrier mobility from the PDFDSe/SEGI device demonstrates a great potential of semiconducting polymer thin-film transistors as electronic components in future electronic applications.

Stretchable Supercapacitors Based on Carbon Nanotubes-Deposited Rubber Polymer Nanofibers Electrodes with High Tolerance against Strain

We report a new fabrication method for a fully stretchable supercapacitor based on single wall carbon nanotube (SWCNT)-coated electrospun rubber nanofibers as stretchable supercapacitor electrodes. The deposition conditions of SWCNT on hydrophobic rubber nanofibers are experimentally optimized to induce a uniform coating of SWCNT. For surfactant-assisted coating of SWCNT, both water contact angle and sheet resistance were lower compared to the cases with other surface treatment methods, indicating a more effective coating approach. The excellent electromechanical properties of this electrode under stretching conditions are demonstrated by the measurement of Young's modulus and normalized sheet resistance. The superb tolerance of the electrode with respect to stretching is the result of (i) high aspect ratios of both nanofiber templates and the SWCNT conductors, (ii) the highly elastic nature of rubbery nanofibers, and (iii) the strong adherence of SWCNT-coated nanofibers on the elastic ecoflex substrate. Electrochemical and electromechanical measurements on stretchable supercapacitor devices reveal that the volumetric capacitance (15.2 F cm^-3 at 0.021 A cm^-3) of the unstretched state is maintained for strains of up to 40%. At this level of strain, the capacitance after 1,000 charge/discharge cycles was not significantly reduced. The high stability of our stretchable device suggests potential future applications in various types of wearable energy storage devices.

Bio-Based Transparent Conductive Film Consisting of Polyethylene Furanoate and Silver Nanowires for Flexible Optoelectronic Devices

Exploiting biomass has raised great interest as an alternative to the fossil resources for environmental protection. In this respect, polyethylene furanoate (PEF), one of the bio-based polyesters, thus reveals a great potential to replace the commonly used polyethylene terephthalate (PET) on account of its better mechanical, gas barrier, and thermal properties. Herein, a bio-based, flexible, conductive film is successfully developed by coupling a PEF plastic substrate with silver nanowires (Ag NWs). Besides the appealing advantage of renewable biomass, PEF also exhibits a good transparency around 90% in the visible wavelength range, and its constituent polar furan moiety is revealed to enable an intense interaction with Ag NWs to largely enhance the adhesion of Ag NWs grown above, as exemplified by the superior bending and peeling durability than the currently prevailing PET substrate. Finally, the efficiency of conductive PEF/Ag NWs film in fabricating efficient flexible organic thin-film transistor and organic photovoltaic (OPV) is demonstrated. The OPV device achieves a power conversion efficiency of 6.7%, which is superior to the device based on ITO/PEN device, manifesting the promising merit of the bio-based PEF for flexible electronic applications.

Intrinsically stretchable, solution-processable functional poly(siloxane-imide)s for stretchable resistive memory applications

A stretchable WORM-type resistive memory device was fabricated using poly(siloxane-imide) ODPA-A12 with favorable mechanical properties.