Enhanced Performance of a CVD MoS2 Photodetector by Chemical in Situ n-Type Doping

Doping Ability Modulated by Interlayer Coupling in AA' and AB Stacked Bilayer V-WS2 Grown with Chemical Vapor Deposition

Doping in transition metal dichalcogenide (TMD) has received extensive attention for its prospect in the application of photoelectric devices. Currently researchers focus on the doping ability and doping distribution in monolayer TMD and have obtained a series of achievements. Bilayer TMD has more excellent properties compared with monolayer TMD. Moreover, bilayer TMD with different stacking structures presents varying performance due to the difference in interlayer coupling. Herein, this work focuses on doping ability of dopants in different bilayer stacking structures that has not been studied yet. Results of this work show that the doping ability of V atoms in bilayer AA' and AB stacked WS2 is different, and the doping concentration of V atoms in AB stacked WS2 is higher than in AA' stacked WS2. Moreover, dopants from top and bottom layer can be distinguished by scanning transmission electron microscopy (STEM) image. Density functional theory (DFT) calculation further confirms the doping rule. This study reveals the mechanism of the different doping ability caused by stacking structures in bilayer TMD and lays a foundation for further preparation of controllable-doping bilayer TMD materials.

Vanadium Metal Doping of Monolayer MoS2 for p-Type Transistors and Fast-Speed Phototransistors

Modulating the electrical properties of two-dimensional (2D) materials is a fundamental prerequisite for their development to advanced electronic and optoelectronic devices. Substitutional doping has been demonstrated as an effective method for tuning the band structure in monolayer 2D materials. Here, we demonstrate a facile selective-area growth of vanadium-doped molybdenum disulfide (V-doped MoS2) flakes via pre-patterned vanadium-metal-assisted chemical vapor deposition (CVD). Optical microscopy characterization revealed the presence of flake arrays. Transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy were employed to identify the chemical composition and crystalline structure of as-grown flakes. Electrical measurements indicated a light p-type conduction behavior in monolayer V-doped MoS2. Furthermore, the response time of phototransistors based on V-doped MoS2 monolayers exhibited a remarkable capability of 3 ms, representing approximately 3 orders of magnitude faster response than that observed in pure MoS2 phototransistors. This work hereby provides a feasible approach to doping of 2D materials, promising a scalable pathway for the integration of these materials into emerging electronic and optoelectronic devices.

Controllable Synthesis of 2H-1T' Mox Re(1- x ) S2 Lateral Heterostructures and Their Tunable Optoelectronic Properties

Constructing heterostructures and doping are valid ways to improve the optoelectronic properties of transition metal dichalcogenides (TMDs) and optimize the performance of TMDs-based photodetectors. Compared with transfer techniques, chemical vapor deposition (CVD) has higher efficiency in preparing heterostructures. As for the one-step CVD growth of heterostructures, cross-contamination between the two materials may occur during the growth process, which may provide the possibility of one-step simultaneous realization of controllable doping and formation of alloy-based heterostructures by finely tuning the growth dynamics. Here, 2H-1T' Mox Re(1- x ) S2 alloy-to-alloy lateral heterostructures are synthesized through this one-step CVD growth method, utilizing the cross-contamination and different growth temperatures of the two alloys. Due to the doping of a small amount of Re atoms in 2H MoS2 , 2H Mox Re(1- x ) S2 has a high response rejection ratio in the solar-blind ultraviolet (SBUV) region and exhibits a positive photoconductive (PPC) effect. While the 1T' Mox Re(1- x ) S2 formed by heavily doping Mo atoms into 1T' ReS2 will produce a negative photoconductivity (NPC) effect under UV laser irradiation. The optoelectronic property of 2H-1T' Mox Re(1- x ) S2 -based heterostructures can be modulated by gate voltage. These findings are expected to expand the functionality of traditional optoelectronic devices and have potential applications in optoelectronic logic devices.

Design of a novel aptamer/molecularly imprinted polymer hybrid modified Ag-Au@Insulin nanoclusters/Au-gate-based MoS2 nanosheet field-effect transistor for attomolar detection of BRCA1 gene

Early detection of breast cancer, the first main cause of death in women, with robust assay platforms using appropriate biomarkers is of great importance for diagnosis and follow-up of the disease progression. This paper introduces an extra selective and sensitive label-free aptasensor for the screening of BRCA1 gene biomarker by taking advantage of a gate modified with aptamer and molecularly imprinted polymer hybrid (MIP) as a new synthetic receptor film coupled with an electrolyte-gated molybdenum disulfide (MoS2) field-effect transistor (FET). The Au gate surface of FET was modified with insulin stabilized bimetallic Ag-Au@nanoclusters (Ag-Au@InsNCs), after which, the immobilization of the hybridized aptamer and o-phenylenediamine was electropolymerized to form an aptamer-MIP hybrid receptor. The output characteristics of Apta-MIP hybrid modified Au gate MoS2 FET device were followed as a result of change in electrical double layer capacitance of electrolye-gate interface. The magnitude of decrease in the drain current showed a linear response over a wide concentration range of 10 aM to 1 nM of BRCA1 ssDNA with a sensitivity as high as 0.4851 μA/decade of concentration and a limit of detection (LOD) of 3.0 aM while very low responses observed for non-imprinted polymer. The devised aptasensor not only was capable to the discrimination of the complementary versus one-base mismatch BRCA1 ssDNA sequence, but also it could detect the complementary BRCA1 ssDNA in spiked human serum samples over a wide concentration range of 10 aM to 1.0 nM with a low LOD of 6.4 aM and a high sensitivity 0.3718 μA/decade.

Advances in the Field of Two-Dimensional Crystal-Based Photodetectors

Two-dimensional (2D) materials have sparked intense interest among the scientific community owing to their extraordinary mechanical, optical, electronic, and thermal properties. In particular, the outstanding electronic and optical properties of 2D materials make them show great application potential in high-performance photodetectors (PDs), which can be applied in many fields such as high-frequency communication, novel biomedical imaging, national security, and so on. Here, the recent research progress of PDs based on 2D materials including graphene, transition metal carbides, transition-metal dichalcogenides, black phosphorus, and hexagonal boron nitride is comprehensively and systematically reviewed. First, the primary detection mechanism of 2D material-based PDs is introduced. Second, the structure and optical properties of 2D materials, as well as their applications in PDs, are heavily discussed. Finally, the opportunities and challenges of 2D material-based PDs are summarized and prospected. This review will provide a reference for the further application of 2D crystal-based PDs.

Photodetection Properties of MoS2, WS2 and MoxW1-xS2 Heterostructure: A Comparative Study

Layered transition metals dichalcogenides such as MoS₂ and WS₂ have shown a tunable bandgap, making them highly desirable for optoelectronic applications. Here, we report on one-step chemical vapor deposited MoS₂, WS₂ and Mo_xW_1-xS₂ heterostructures incorporated into photoconductive devices to be examined and compared in view of their use as potential photodetectors. Vertically aligned MoS₂ nanosheets and horizontally stacked WS₂ layers, and their heterostructure form Mo_xW_1-xS₂, exhibit direct and indirect bandgap, respectively. To analyze these structures, various characterization methods were used to elucidate their properties including Raman spectroscopy, X-ray diffraction, X-ray photoelectron spectrometry and high-resolution transmission electron microscopy. While all the investigated samples show a photoresponse in a broad wavelength range between 400 nm and 700 nm, the vertical MoS₂ nanosheets sample exhibits the highest performances at a low bias voltage of 5 V. Our findings demonstrate a responsivity and a specific detectivity of 47.4 mA W^-1 and 1.4 × 10¹¹ Jones, respectively, achieved by Mo_xW_1-xS₂. This study offers insights into the use of a facile elaboration technique for tuning the performance of Mo_xW_1-xS₂ heterostructure-based photodetectors.

Improved detectivity and response speed of MoS2 phototransistors based on the negative-capacitance effect and defect engineering

Due to the unique crystal structure, outstanding optoelectronic properties and a tunable band gap from 1.2-1.8 eV, two-dimensional molybdenum disulfide (MoS₂) has attracted extensive attention as a promising candidate for future photodetectors. In this work, a negative-capacitance (NC) MoS₂ phototransistor is fabricated by using H f _0.5 Z r _0.5 O ₂ (HZO) as ferroelectric layer and Al₂O₃ as matching layer, and a low subthreshold swing (SS) of 39 mV/dec and an ultrahigh detectivity of 3.736×10¹⁴ cmHz^1/2W^-1 are achieved at room temperature due to the NC effect of the ferroelectric HZO. Moreover, after sulfur (S) treatment on MoS₂, the transistor obtained a lower SS of 33 mV/dec, a detectivity of 1.329×10¹⁴ cmHz^1/2W^-1 and specially a faster response time of 3-4 ms at room temperature, attributed to the modulation of photogating effect induced by S-vacancy passivation in MoS₂ by the S treatment. Therefore, the combination of the defect engineering on MoS₂ and the NC effect from ferroelectric thin film could provide an effective solution for high-sensitivity phototransistors based on two-dimensional materials in the future.

High-Speed Transition-Metal Dichalcogenides Based Schottky Photodiodes for Visible and Infrared Light Communication

Due to their atomically ultrathin thickness, the development of high-performance transition-metal dichalcogenides (TMDCs) based photodetectors demands device designs distinct from architectures adopted in conventional bulk semiconductor devices. Here, we demonstrate a field-induced Schottky barrier photodiode with three different TMDC materials, WSe₂, MoTe₂, and WS₂. Owing to the high gate efficiency of a high-κ dielectric film, the Schottky barrier at metal contacts is effectively modulated by external bias, giving rise to a strong diode-like rectifying characteristic with high current on/off ratio. The WSe₂ photodiode shows a linear dynamic range of 112 dB, a responsivity of 0.17 A/W, and response time of 8 ns. When this fast WSe₂ device is employed for visible light communication data linking, a maximum real-time data transmission rate of 110 Mbps is achieved. Meanwhile, infrared light communication was also realized with a maximum data rate of 30 Mbps using a field-induced MoTe₂ Schottky barrier photodiode as a light sensor. This work provides a general CMOS-compatible and controllable fabrication strategy for TMDC-based photodetectors.

High-Responsivity Multiband and Polarization-Sensitive Photodetector Based on the TiS3/MoS2 Heterojunction

Two-dimensional (2D) material photodetectors have received considerable attention in optoelectronics as a result of their extraordinary properties, such as passivated surfaces, strong light-matter interactions, and broad spectral responses. However, single 2D material photodetectors still suffer from low responsivity, large dark current, and long response time as a result of their atomic-level thickness, large binding energy, and susceptibility to defects. Here, a transition metal trichalcogenide TiS₃ with excellent photoelectric characteristics, including a direct bandgap (1.1 eV), high mobility, high air stability, and anisotropy, is selected to construct a type-II heterojunction with few-layer MoS₂, aiming to improve the performance of 2D photodetectors. An ultrahigh photoresponsivity of the TiS₃/MoS₂ heterojunction of 48 666 A/W at 365 nm, 20 000 A/W at 625 nm, and 251 A/W at 850 nm is achieved under light-emitting diode illumination. The response time and dark current are 2 and 3 orders of magnitude lower than those of the current TiS₃ photodetector with the highest photoresponsivity (2500 A/W), respectively. Furthermore, polarized four-wave mixing spectroscopy and polarized photocurrent measurements verify its polarization-sensitive characteristics. This work confirms the excellent potential of TiS₃/MoS₂ heterojunctions for air-stable, high-performance, polarization-sensitive, and multiband photodetectors, and the excellent type-II TiS₃/MoS₂ heterojunction system may accelerate the design and fabrication of other 2D functional devices.

Poly(vinyl alcohol)-Assisted Exfoliation of van der Waals Materials

We report a highly efficient and easily transferable poly(vinyl alcohol) (PVA)-assisted exfoliation method, which allows one to obtain van der Waals materials on large scales, e.g., centimeter-scale graphite flakes and hundred-micrometer-scale several layers of ZnIn₂S₄ and BN. The present exfoliation scheme is nondestructive, and the materials prepared by PVA-assisted exfoliation can be directly fabricated into devices. This exfoliation approach could be helpful in overcoming the preparation bottleneck for large-scale applications of two-dimensional (2D) materials.

Patterned Growth of Transition Metal Dichalcogenide Monolayers and Multilayers for Electronic and Optoelectronic Device Applications

A simple, large area, and cost-effective soft lithographic method is presented for the patterned growth of high-quality 2D transition metal dichalcogenides (TMDs). Initially, a liquid precursor (Na₂ MoO₄ in an aqueous solution) is patterned on the growth substrate using the micromolding in capillaries technique. Subsequently, a chemical vapor deposition step is employed to convert the precursor patterns to monolayer, few layers, or bulk TMDs, depending on the precursor concentration. The grown patterns are characterized using optical microscopy, atomic force microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and photoluminescence spectroscopy to reveal their morphological, chemical, and optical characteristics. Additionally, electronic and optoelectronic devices are realized using the patterned TMDs and tested for their applicability in field effect transistors and photodetectors. The photodetectors made of MoS₂ line patterns show a very high responsivity of 7674 A W^-1 and external quantum efficiency of 1.49 × 10⁶ %. Furthermore, the multiple grain boundaries present in patterned TMDs enable the fabrication of memtransistor devices. The patterning technique presented here may be applied to many other TMDs and related heterostructures, potentially advancing the fabrication of TMDs-based device arrays.

All-Printed Ultrahigh-Responsivity MoS2 Nanosheet Photodetectors Enabled by Megasonic Exfoliation

Printed 2D materials, derived from solution-processed inks, offer scalable and cost-effective routes to mechanically flexible optoelectronics. With micrometer-scale control and broad processing latitude, aerosol-jet printing (AJP) is of particular interest for all-printed circuits and systems. Here, AJP is utilized to achieve ultrahigh-responsivity photodetectors consisting of well-aligned, percolating networks of semiconducting MoS₂ nanosheets and graphene electrodes on flexible polyimide substrates. Ultrathin (≈1.2 nm thick) and high-aspect-ratio (≈1 μm lateral size) MoS₂ nanosheets are obtained by electrochemical intercalation followed by megasonic atomization during AJP, which not only aerosolizes the inks but also further exfoliates the nanosheets. The incorporation of the high-boiling-point solvent terpineol into the MoS₂ ink is critical for achieving a highly aligned and flat thin-film morphology following AJP as confirmed by grazing-incidence wide-angle X-ray scattering and atomic force microscopy. Following AJP, curing is achieved with photonic annealing, which yields quasi-ohmic contacts and photoactive channels with responsivities exceeding 10³  A W^-1 that outperform previously reported all-printed visible-light photodetectors by over three orders of magnitude. Megasonic exfoliation coupled with properly designed AJP ink formulations enables the superlative optoelectronic properties of ultrathin MoS₂ nanosheets to be preserved and exploited for the scalable additive manufacturing of mechanically flexible optoelectronics.

Effective Optical Properties of Laterally Coalescing Monolayer MoS2

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) exhibit compelling dimension-dependent exciton-dominated optical behavior influenced by thickness and lateral quantum confinement effects. Thickness quantum confinement effects have been observed; however, experimental optical property assessment of nanoscale lateral dimension monolayer TMDCs is lacking. Here, we employ ex situ spectroscopic ellipsometry to evaluate laterally coalescing monolayer metalorganic chemical vapor deposited MoS₂. A multisample analysis is used to constrain Bruggeman and Maxwell-Garnett effective medium approximations and the effective dielectric functions are derived for laterally coalesced and uncoalesced MoS₂ films (∼10-94% surface coverage for ∼10-140 nm lateral grain sizes). This analysis demonstrates the ability to probe MoS₂ optical exciton behavior at growth-relevant grain sizes in relation to chemical vapor nucleation density, ripening, and lateral growth conditions. Our analysis is pertinent toward expected in situ epitaxial 2D TMDC film growth metrology to enable the facile development of monolayer films with targeted process-dependent optical properties.

Stabilization of Three-Particle Excitations in Monolayer MoS2 by Fluorinated Methacrylate Polymers

While extrinsic factors, such as substrates and chemical doping, are known to strongly influence visible photoemission from monolayer MoS₂, key fundamental knowledge for p-type polymeric dopants is lacking. We investigated perturbations to the electronic environment of 2D MoS₂ using fluorinated polymer coatings and specifically studied stabilization of three-particle states by monitoring changes in intensities and emission maxima of three-particle and two-particle emissions. We calculated changes in carrier density and trion binding energy, the latter having an additional contribution from MoS₂ polarization by the polymer. Polarization is further suggested by Kelvin probe force microscopy (KPFM) measurements of large Fermi level shifts. Changes similar in magnitude, but opposite in sign, were observed in 2D MoS₂ coated with an analogous nonfluorinated polymer. These findings highlight the important interplay between electron exchange and electrostatic interactions at the interface between polymers and transition metal dichalcogenides (TMDCs), which govern fundamental electronic properties relevant to next-generation devices.

Mechanism, Material, Design, and Implementation Principle of Two-Dimensional Material Photodetectors

Two-dimensional (2D) materials may play an important role in future photodetectors due to their natural atom-thin body thickness, unique quantum confinement, and excellent electronic and photoelectric properties. Semimetallic graphene, semiconductor black phosphorus, and transition metal dichalcogenides possess flexible and adjustable bandgaps, which correspond to a wide interaction spectrum ranging from ultraviolet to terahertz. Nevertheless, their absorbance is relatively low, and it is difficult for a single material to cover a wide spectrum. Therefore, the combination of phototransistors based on 2D hybrid structures with other material platforms, such as quantum dots, organic materials, or plasma nanostructures, exhibit ultra-sensitive and broadband optical detection capabilities that cannot be ascribed to the individual constituents of the assembly. This article provides a comprehensive and systematic review of the recent research progress of 2D material photodetectors. First, the fundamental detection mechanism and key metrics of the 2D material photodetectors are introduced. Then, the latest developments in 2D material photodetectors are reviewed based on the strategies of photocurrent enhancement. Finally, a design and implementation principle for high-performance 2D material photodetectors is provided, together with the current challenges and future outlooks.

Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection

Photodetectors are one of the most important components for a future "Internet-of-Things" information society. Compared to the mainstream semiconductor-based photodetectors, emerging devices based on two-dimensional (2D) materials and ferroelectrics as well as their hybrid systems have been extensively studied in recent decades due to their outstanding performances and related interesting physical, electrical, and optoelectronic phenomena. In this paper, we review the photodetection based on 2D materials and ferroelectric hybrid systems. The fundamentals of 2D and ferroelectric materials as well as the interaction in the hybrid system will be introduced. Ferroelectricity modulated optoelectronic properties in the hybrid system will be discussed in detail. After the basics and figures of merit of photodetectors are summarized, the 2D-ferroelectrics devices with different structures including p-n diodes, Schottky diodes, and field-effect transistors will be reviewed and compared. The polarization of ferroelectrics offers the possibility of the modulation and enhancement of the photodetection in the hybrid detectors, which will be discussed in depth. Finally, the challenges and perspectives of the photodetectors based on 2D ferroelectrics will be proposed. This Review outlines the important aspects of the recent development of the hybrid system of 2D and ferroelectric materials, which could interact with each other and thus lead to photodetectors with higher performances. Such a Review will be helpful for the research of emerging physical phenomena and for the design of multifunctional nanoscale electronic and optoelectronic devices.

An ultrasensitive molybdenum-based double-heterojunction phototransistor

Two-dimensional (2D) materials are promising for next-generation photo detection because of their exceptional properties such as a strong interaction with light, electronic and optical properties that depend on the number of layers, and the ability to form hybrid structures. However, the intrinsic detection ability of 2D material-based photodetectors is low due to their atomic thickness. Photogating is widely used to improve the responsivity of devices, which usually generates large noise current, resulting in limited detectivity. Here, we report a molybdenum-based phototransistor with MoS₂ channel and α-MoO_3-x contact electrodes. The device works in a photo-induced barrier-lowering (PIBL) mechanism and its double heterojunctions between the channel and the electrodes can provide positive feedback to each other. As a result, a detectivity of 9.8 × 10¹⁶ cm Hz^1/2 W^-1 has been achieved. The proposed double heterojunction PIBL mechanism adds to the techniques available for the fabrication of 2D material-based phototransistors with an ultrahigh photosensitivity.

Enhanced responsivity and detectivity of fast WSe2 phototransistor using electrostatically tunable in-plane lateral p-n homojunction

Layered transition metal dichalcogenides have shown tremendous potential for photodetection due to their non-zero direct bandgaps, high light absorption coefficients and carrier mobilities, and ability to form atomically sharp and defect-free heterointerfaces. A critical and fundamental bottleneck in the realization of high performance detectors is their trap-dependent photoresponse that trades off responsivity with speed. This work demonstrates a facile method of attenuating this trade-off by nearly 2x through integration of a lateral, in-plane, electrostatically tunable p-n homojunction with a conventional WSe2 phototransistor. The tunable p-n junction allows modulation of the photocarrier population and width of the conducting channel independently from the phototransistor. Increased illumination current with the lateral p-n junction helps achieve responsivity enhancement upto 2.4x at nearly the same switching speed (14-16 µs) over a wide range of laser power (300 pW-33 nW). The added benefit of reduced dark current enhances specific detectivity (D*) by nearly 25x to yield a maximum measured flicker noise-limited D* of 1.1×1012 Jones. High responsivity of 170 A/W at 300 pW laser power along with the ability to detect sub-1 pW laser switching are demonstrated.

Large-scale MoS2(1-x)Se2xmonolayers synthesized by confined-space CVD

Alloy engineering is efficient in modulating the electronic structure and physical and chemical properties of Transition metal dichalcogenides (TMDs). Here, we develop an efficient and simple confined-space CVD strategy by using a smaller quartz boat nested in a larger quartz boat for the preparation of ternary alloy MoS_2(1-x)Se_2xmonolayers on SiO₂/Si substrates with controllable composition. The effect of hydrogen ratio of the mixed carrier gas (Ar/H₂) on the resultant flakes are systematically investigated. A hydrogon ratio of 15% is demonstrated to be the most appropriate to synthesize large size (more than 400μm) single crystalline MoS_2(1-x)Se_2xalloy monolayers. The composition of the alloy can also be changed in a full range (2x= 0-2) by changing the weight ratio of Se and S powder. The as-grown monolayer MoS_2(1-x)Se_2xalloys present continuously high crystal quality in terms of Raman and PL measurements. Furthermore, to visible light (532 nm), the MoS_2(1-x)Se_2xbased photodetectors display wonderful photoresponse with a fast response of less than 50 ms. Our work may be usedful in directing the synthesis of TMDs alloys as well as their optoelectronic applications.

High-Performance MoS2 Photodetectors Prepared Using a Patterned Gallium Nitride Substrate

Strain-adjusting the band gap of MoS₂ using patterned substrates to improve the photoelectric performance of MoS₂ has gradually become a research hotspot in recent years. However, there are still difficulties in obtaining high-quality two-dimensional materials and preparing photodetectors on patterned substrates. To overcome this, a continuous multilayer MoS₂ film was transferred to a patterned gallium nitride substrate (PGS) for the fabrication of photodetectors, and density functional theory calculations showed that the band gap of the MoS₂ film increased and that the electron effective mass decreased due to the introduction of PGS. In addition, finite difference time domain simulation showed that the electric field in the MoS₂ area on the PGS is enhanced compared with that on the flat gallium nitride substrate due to the enhanced light scattering effect of the PGS. The photoresponse of the MoS₂/PGS photodetector at 460 nm was also enhanced, with I_ph increasing by 5 times, R increasing by 2 times, NEP decreasing to 3.88 × 10^-13 W/Hz^1/2, and D* increasing to 5.6 × 10⁸ Jones. Our research has important guiding significance in adjusting the band gap of MoS₂ and enhancing the photoelectric performance of MoS₂ photodetectors.

Few-layer In4/3P2Se6 nanoflakes for high detectivity photodetectors

Metal phosphorus trichalcogenides (MPX₃) have attracted extensive attention as promising two-dimensional (2D) layered materials in future electronic and optoelectronic devices. Here, for the first time, few-layer In_4/3P₂Se₆ nanoflakes have been successfully exfoliated from home-made high-quality single crystals. The In_4/3P₂Se₆ crystal belongs to the R3 space group, and possesses a weak van der Waals force between the adjacent layers and a direct bandgap of 1.99 eV. Furthermore, the In_4/3P₂Se₆-based photodetectors show high performances in the visible light region, such as a high responsivity (R) of 4.93 A·W^-1, a high external quantum efficiency (EQE) of 1509% and a fast response time, as low as 2.1 ms. In particular, the high detectivity (D) of the devices can reach up to 4.3 × 10¹³ Jones (light ON/OFF ratio ≈10⁴) under illumination from a 405 nm light at a bias voltage of 1 V, which is favoured by the ultralow dark current (∼100 fA). These excellent performances pave the way for the implementation of In_4/3P₂Se₆ nanoflakes as promising candidates for future optoelectronic detection applications.

A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

Two-dimensional transition metal dichalcogenides (2D TMDs) have attracted much attention in the field of optoelectronics due to their tunable bandgaps, strong interaction with light and tremendous capability for developing diverse van der Waals heterostructures (vdWHs) with other materials. Molybdenum disulfide (MoS2) atomic layers which exhibit high carrier mobility and optical transparency are very suitable for developing ultra-broadband photodetectors to be used from surveillance and healthcare to optical communication. This review provides a brief introduction to TMD-based photodetectors, exclusively focused on MoS2-based photodetectors. The current research advances show that the photoresponse of atomic layered MoS2 can be significantly improved by boosting its charge carrier mobility and incident light absorption via forming MoS2 based plasmonic nanostructures, halide perovskites-MoS2 heterostructures, 2D-0D MoS2/quantum dots (QDs) and 2D-2D MoS2 hybrid vdWHs, chemical doping, and surface functionalization of MoS2 atomic layers. By utilizing these different integration strategies, MoS2 hybrid heterostructure-based photodetectors exhibited remarkably high photoresponsivity raging from mA W-1 up to 1010 A W-1, detectivity from 107 to 1015 Jones and a photoresponse time from seconds (s) to nanoseconds (10-9 s), varying by several orders of magnitude from deep-ultraviolet (DUV) to the long-wavelength infrared (LWIR) region. The flexible photodetectors developed from MoS2-based hybrid heterostructures with graphene, carbon nanotubes (CNTs), TMDs, and ZnO are also discussed. In addition, strain-induced and self-powered MoS2 based photodetectors have also been summarized. The factors affecting the figure of merit of a very wide range of MoS2-based photodetectors have been analyzed in terms of their photoresponsivity, detectivity, response speed, and quantum efficiency along with their measurement wavelengths and incident laser power densities. Conclusions and the future direction are also outlined on the development of MoS2 and other 2D TMD-based photodetectors.

Solar-assisted fabrication of dimpled 2H-MoS2 membrane for highly efficient water desalination

Solar-driven evaporation has been proposed as an efficient way to harvest solar energy for water treatment and desalination. However, the complex preparation process and the degradation of photothermal absorbers restrict their practical applications in solar thermal technology. Herein, a solar-assisted fabrication of three-dimensional dimpled MoS₂ membrane (DMM-SA) with an open macroporous (1-2 μm) network is fabricated by folding and overlapping nanosheets under solar illumination. DMM-SA exhibits superior water permeability (334-461 LMH/bar) and extraordinary chemical and structural stability. Compared to the 1T and mixed-phase DMM-SA samples, 2H-DMM-SA floating on the water surface generates high heat localization and achieves high evaporation efficiencies of 83.8 ± 0.8% and 91.5 ± 1.1% at 1 and 3 sun illumination, respectively. After multiple illumination and regeneration cycles, 2H-DMM-SA presents high water evaporation and salt rejection performance. After desalination, the salinity level of permeate water is far below the World Health Organization (WHO) standard. Numerical simulations verify that the inner spaces between two nanosheets and the nanochannels contribute to the high bulk water and vapor fluxes during desalination. The facile and efficient design of 3D 2H-DMM-SA provides a novel avenue for seawater utilization by harvesting solar energy.

Deeply Exploring Anisotropic Evolution toward Large-Scale Growth of Monolayer ReS2

Among large numbers of transition metal dichalcogenides (TMDCs), monolayer rhenium disulfide (ReS₂) is of particular interest due to its unique structural anisotropy, which opens up unprecedented opportunities in dichroic atomical electronics. Understanding the domain structure and controlling the anisotropic evolution of ReS₂ during the growth is considered critical for increasing the domain size toward a large-scale growth of monolayer ReS₂. Herein, by employing angle-resolved Raman spectroscopy, we reveal that the hexagonal ReS₂ domain is constructed by six well-defined subdomains with each b-axis parallel to the diagonal of the hexagon. By further combining the first-principles calculations and the transmission electron microscopy (TEM) characterization, a dislocation-involved anisotropic evolution is proposed to explain the formation of the domain structures and understand the limitation of the domain size. Based on these findings, growth rates of different crystal planes are well controlled to enlarge the domain size, and moreover, single-crystal domains with a triangle shape are obtained. With the improved domain size, large-scale uniform, strictly monolayer ReS₂ films are grown further. Scalable field-effect transistor (FET) arrays are constructed, which show good electrical performances comparable or even superior to that of the single domains reported at room temperature. This work not only sheds light on comprehending the novel growth mechanism of ReS₂ but also offers a robust and controllable strategy for the synthesis of large-area and high-quality two-dimensional materials with low structural symmetry.

Ultrasensitive negative capacitance phototransistors

Sensitive photodetection is crucial for modern optoelectronic technology. Two-dimensional molybdenum disulfide (MoS₂) with unique crystal structure, and extraordinary electrical and optical properties is a promising candidate for ultrasensitive photodetection. Previously reported methods to improve the performance of MoS₂ photodetectors have focused on complex hybrid systems in which leakage paths and dark currents inevitably increase, thereby reducing the photodetectivity. Here, we report an ultrasensitive negative capacitance (NC) MoS₂ phototransistor with a layer of ferroelectric hafnium zirconium oxide film in the gate dielectric stack. The prototype photodetectors demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and ultrahigh photodetectivity of 4.75 × 10¹⁴ cm Hz^1/2 W⁻¹ at room temperature. The enhanced performance benefits from the combined action of the strong photogating effect induced by ferroelectric local electrostatic field and the voltage amplification based on ferroelectric NC effect. These results address the key challenges for MoS₂ photodetectors and offer inspiration for the development of other optoelectronic devices.

Here, the authors report ultrasensitive negative capacitance phototransistors based on MoS₂ regulated by a layer of ferroelectric hafnium zirconium oxide film to demonstrate a hysteresis-free ultra-steep subthreshold slope of 17.64 mV/dec and specific detectivity of 4.75 × 10¹⁴ cm Hz^1/2 W⁻¹ at room temperature.

A Dual-Gate MoS2 Photodetector Based on Interface Coupling Effect

2D transition metal dichalcogenides (TMDs) based photodetectors have shown great potential for the next generation optoelectronics. However, most of the reported MoS₂ photodetectors function under the photogating effect originated from the charge-trap mechanism, which is difficult for quantitative control. Such devices generally suffer from a poor compromise between response speed and responsivity (R) and large dark current. Here, a dual-gated (DG) MoS₂ phototransistor operating based on the interface coupling effect (ICE) is demonstrated. By simultaneously applying a negative top-gate voltage (V_TG ) and positive back-gate voltage (V_BG ) to the MoS₂ channel, the photogenerated holes can be effectively trapped in the depleted region under TG. An ultrahigh R of ≈10⁵ A W^-1 and detectivity (D*) of ≈10¹⁴ Jones are achieved in several devices with different thickness under P_in of 53 µW cm^-2 at V_TG = -5 V. Moreover, the response time of the DG phototransistor can also be modulated based on the ICE. Based on these systematic measurements of MoS₂ DG phototransistors, the results show that the ICE plays an important role in the modulation of photoelectric performances. The results also pave the way for the future optoelectrical application of 2D TMDs materials and prompt for further investigation in the DG structured phototransistors.

Controlled Plasma Thinning of Bulk MoS2 Flakes for Photodetector Fabrication

The electronic properties of layered materials are directly determined based on their thicknesses. Remarkable progress has been carried out on synthesis of wafer-scale atomically molybdenum disulfide (MoS2) layers as a two-dimensional material in the past few years in order to transform them into commercial products. Although chemical/mechanical exfoliation techniques are used to obtain a high-quality monolayer of MoS2, the lack of suitable control in the thickness and the lateral size of the flakes restrict their benefits. As a result, a straightforward, effective, and reliable approach is widely demanded to achieve a large-area MoS2 flake with control in its thickness for optoelectronic applications. In this study, thick MoS2 flakes are obtained by a short-time bath sonication in dimethylformamide solvent, which are thinned with the aid of a sequential plasma etching process using H2, O2, and SF6 plasma. A comprehensive study has been carried out on MoS2 flakes based on scanning electron microscopy, atomic force microscopy, Raman, transmission electron microscopy, and X-ray photoelectron microscopy measurements, which ultimately leads to a two-cycle plasma thinning method. In this approach, H2 is used in the passivation step in the first subcycle, and O2/SF6 plasma acts as an etching step for removing the MoS2 layers in the second subcycle. Finally, we show that this technique can be enthusiastically used to fabricate MoS2-based photodetectors with a considerable photoresponsivity of 1.39 A/W and a response time of 0.45 s under laser excitation of 532 nm.