Microsecond Carrier Lifetimes, Controlled p-Doping, and Enhanced Air Stability in Low-Bandgap Metal Halide Perovskites

Advances in Mixed Tin-Lead Narrow-Bandgap Perovskites for Single-Junction and All-Perovskite Tandem Solar Cells

Organic-inorganic metal-halide perovskites have received great attention for photovoltaic (PV) applications owing to their superior optoelectronic properties and the unprecedented performance development. For single-junction PV devices, although lead (Pb)-based perovskite solar cells have achieved 26.1% efficiency, the mixed tin-lead (Sn-Pb) perovskites offer more ideal bandgap tuning capability to enable an even higher performance. The Sn-Pb perovskite (with a bandgap tuned to ≈1.2 eV) is also attractive as the bottom subcell for a tandem configuration to further surpass the Shockley-Queisser radiative limit for the single-junction devices. The performance of the all-perovskite tandem solar cells has gained rapid development and achieved a certified efficiency up to 29.1%. In this article, the properties and recent development of state-of-the-art mixed Sn-Pb perovskites and their application in single-junction and all-perovskite tandem solar cells are reviewed. Recent advances in various approaches covering additives, solvents, interfaces, and perovskite growth are highlighted. The authors also provide the perspective and outlook on the challenges and strategies for further development of mixed Sn-Pb perovskites in both efficiency and stability for PV applications.

Influence of F-Containing Materials on Perovskite Solar Cells

Perovskite solar cells (PSCs) are usually modified and passivated to improve their performance and stability. The interface modification and bulk doping are the two basic strategies. Fluorine (F)-containing materials are highly favored because of their unique hydrophobicity and coordination ability. This review discusses the basic characteristics of F, and the basic principles of improving the photovoltaic performance and stability of PSC devices using F-containing materials. We systematically summarized the latest progress in the application of F-containing materials to achieve efficient and stable PSCs on several key interface layers. It is believed that this work will afford significant understanding and inspirations toward the future application directions of F-containing materials in PSCs, and provide profound insights for the development of efficient and stable PSCs.

Narrow Bandgap Metal Halide Perovskites for All-Perovskite Tandem Photovoltaics

All-perovskite tandem solar cells are attracting considerable interest in photovoltaics research, owing to their potential to surpass the theoretical efficiency limit of single-junction cells, in a cost-effective sustainable manner. Thanks to the bandgap-bowing effect, mixed tin-lead (Sn-Pb) perovskites possess a close to ideal narrow bandgap for constructing tandem cells, matched with wide-bandgap neat lead-based counterparts. The performance of all-perovskite tandems, however, has yet to reach its efficiency potential. One of the main obstacles that need to be overcome is the─oftentimes─low quality of the mixed Sn-Pb perovskite films, largely caused by the facile oxidation of Sn(II) to Sn(IV), as well as the difficult-to-control film crystallization dynamics. Additional detrimental imperfections are introduced in the perovskite thin film, particularly at its vulnerable surfaces, including the top and bottom interfaces as well as the grain boundaries. Due to these issues, the resultant device performance is distinctly far lower than their theoretically achievable maximum efficiency. Robust modifications and improvements to the surfaces of mixed Sn-Pb perovskite films are therefore critical for the advancement of the field. This Review describes the origins of imperfections in thin films and covers efforts made so far toward reaching a better understanding of mixed Sn-Pb perovskites, in particular with respect to surface modifications that improved the efficiency and stability of the narrow bandgap solar cells. In addition, we also outline the important issues of integrating the narrow bandgap subcells for achieving reliable and efficient all-perovskite double- and multi-junction tandems. Future work should focus on the characterization and visualization of the specific surface defects, as well as tracking their evolution under different external stimuli, guiding in turn the processing for efficient and stable single-junction and tandem solar cell devices.

Perovskite Solar Cells: A Review of the Latest Advances in Materials, Fabrication Techniques, and Stability Enhancement Strategies

Perovskite solar cells (PSCs) are gaining popularity due to their high efficiency and low-cost fabrication. In recent decades, noticeable research efforts have been devoted to improving the stability of these cells under ambient conditions. Moreover, researchers are exploring new materials and fabrication techniques to enhance the performance of PSCs under various environmental conditions. The mechanical stability of flexible PSCs is another area of research that has gained significant attention. The latest research also focuses on developing tin-based PSCs that can overcome the challenges associated with lead-based perovskites. This review article provides a comprehensive overview of the latest advances in materials, fabrication techniques, and stability enhancement strategies for PSCs. It discusses the recent progress in perovskite crystal structure engineering, device construction, and fabrication procedures that has led to significant improvements in the photo conversion efficiency of these solar devices. The article also highlights the challenges associated with PSCs such as their poor stability under ambient conditions and discusses various strategies employed to enhance their stability. These strategies include the use of novel materials for charge transport layers and encapsulation techniques to protect PSCs from moisture and oxygen. Finally, this article provides a critical assessment of the current state of the art in PSC research and discusses future prospects for this technology. This review concludes that PSCs have great potential as a low-cost alternative to conventional silicon-based solar cells but require further research to improve their stability under ambient conditions in view of their definitive commercialization.

Probing the Local Electronic Structure in Metal Halide Perovskites through Cobalt Substitution

Owing to the unique chemical and electronic properties arising from 3d-electrons, substitution with transition metal ions is one of the key routes for engineering new functionalities into materials. While this approach has been used extensively in complex metal oxide perovskites, metal halide perovskites have largely resisted facile isovalent substitution. In this work, it is demonstrated that the substitution of Co²⁺ into the lattice of methylammonium lead triiodide imparts magnetic behavior to the material while maintaining photovoltaic performance at low concentrations. In addition to comprehensively characterizing its magnetic properties, the Co²⁺ ions themselves are utilized as probes to sense the local electronic environment of Pb in the perovskite, thereby revealing the nature of their incorporation into the material. A comprehensive understanding of the effect of transition metal incorporation is provided, thereby opening the substitution gateway for developing novel functional perovskite materials and devices for future technologies.

Prospects for Tin-Containing Halide Perovskite Photovoltaics

Tin-containing metal halide perovskites have enormous potential as photovoltaics, both in narrow band gap mixed tin-lead materials for all-perovskite tandems and for lead-free perovskites. The introduction of Sn(II), however, has significant effects on the solution chemistry, crystallization, defect states, and other material properties in halide perovskites. In this perspective, we summarize the main hurdles for tin-containing perovskites and highlight successful attempts made by the community to overcome them. We discuss important research directions for the development of these materials and propose some approaches to achieve a unified understanding of Sn incorporation. We particularly focus on the discussion of charge carrier dynamics and nonradiative losses at the interfaces between perovskite and charge extraction layers in p-i-n cells. We hope these insights will aid the community to accelerate the development of high-performance, stable single-junction tin-containing perovskite solar cells and all-perovskite tandems.

A Roadmap for Efficient and Stable All-Perovskite Tandem Solar Cells from a Chemistry Perspective

Multijunction tandem solar cells offer a promising route to surpass the efficiency limit of single-junction solar cells. All-perovskite tandem solar cells are particularly attractive due to their high power conversion efficiency, now reaching 28% despite being made with relatively easy fabrication methods. In this review, we summarize the progress in all-perovskite tandem solar cells. We then discuss the scientific and engineering challenges associated with both absorbers and functional layers and offer strategies for improving the efficiency and stability of all-perovskite tandem solar cells from the perspective of chemistry.

Sn-Based Perovskite Halides for Electronic Devices

Because of its less toxicity and electronic structure analogous to that of lead, tin halide perovskite (THP) is currently one of the most favorable candidates as an active layer for optoelectronic and electric devices such as solar cells, photodiodes, and field-effect transistors (FETs). Promising photovoltaics and FETs performances have been recently demonstrated because of their desirable electrical and optical properties. Nevertheless, THP's easy oxidation from Sn2+ to Sn4+ , easy formation of tin vacancy, uncontrollable film morphology and crystallinity, and interface instability severely impede its widespread application. This review paper aims to provide a basic understanding of THP as a semiconductor by highlighting the physical structure, energy band structure, electrical properties, and doping mechanisms. Additionally, the key chemical instability issues of THPs are discussed, which are identified as the potential bottleneck for further device development. Based on the understanding of the THPs properties, the key recent progress of THP-based solar cells and FETs is briefly discussed. To conclude, current challenges and perspective opportunities are highlighted.

Review on Perovskite Semiconductor Field-Effect Transistors and Their Applications

Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.

Optoelectronic Properties of Low-Bandgap Halide Perovskites for Solar Cell Applications

Riding on the coat tails of rapid developments in single-junction halide perovskite solar cells, all-perovskite multijunction solar cells have recently garnered significant attention, with the highest power-conversion efficiency already reaching 25.6%. Much of this progress has been fueled by the rapid rise in the photovoltaic performance of low-bandgap halide perovskite absorbers, materials, which, to date, have only been achievable by the partial or complete substitution of lead with tin. However, much room still exists to develop a more critical understanding of key material properties in these low-bandgap perovskites. Herein, the key optoelectronic properties of absorption, carrier generation, recombination, and transport in these tin-containing perovskites are discussed, showing that intrinsic doping distinctively impacts many of these properties, thereby rendering this class of halide perovskites unique within the family. Current understanding of the mechanisms that degrade optoelectronic performance in these materials and the corresponding devices are also summarized. These collective results highlight an important interplay between doping, defects, and degradation that will need to be controlled. Finally, the current gaps in understanding of these low-bandgap perovskites are outlined, thereby providing guidelines for further research, which will unlock their full potential for realizing a plethora of high-performance optoelectronic devices.

Revealing Ultrafast Charge-Carrier Thermalization in Tin-Iodide Perovskites through Novel Pump-Push-Probe Terahertz Spectroscopy

Tin-iodide perovskites are an important group of semiconductors for photovoltaic applications, promising higher intrinsic charge-carrier mobilities and lower toxicity than their lead-based counterparts. Controllable tin vacancy formation and the ensuing hole doping provide interesting opportunities to investigate dynamic intraband transitions of charge carriers in these materials. Here, we present for the first time an experimental implementation of a novel Optical-Pump-IR-Push-THz-Probe spectroscopic technique and demonstrate its suitability to investigate the intraband relaxation dynamics of charge carriers brought into nonequilibrium by an infrared "push" pulse. We observe a push-induced decrease of terahertz conductivity for both chemically- and photodoped FA_0.83Cs_0.17SnI₃ thin films and show that these effects derive from stimulated THz emission. We use this technique to reveal that newly photogenerated charge carriers relax within the bands of FA_0.83Cs_0.17SnI₃ on a subpicosecond time scale when a large, already fully thermalized (cold) population of charge-carriers is present. Such rapid dissipation of the initial charge-carrier energy suggests that the propensity of tin halide perovskites toward unintentional self-doping resulting from tin vacancy formation makes these materials less suited to implementation in hot-carrier solar cells than their lead-based counterparts.

Optoelectronic Properties of Tin-Lead Halide Perovskites

Mixed tin-lead halide perovskites have recently emerged as highly promising materials for efficient single- and multi-junction photovoltaic devices. This Focus Review discusses the optoelectronic properties that underpin this performance, clearly differentiating between intrinsic and defect-mediated mechanisms. We show that from a fundamental perspective, increasing tin fraction may cause increases in attainable charge-carrier mobilities, decreases in exciton binding energies, and potentially a slowing of charge-carrier cooling, all beneficial for photovoltaic applications. We discuss the mechanisms leading to significant bandgap bowing along the tin-lead series, which enables attractive near-infrared bandgaps at intermediate tin content. However, tin-rich stoichiometries still suffer from tin oxidation and vacancy formation which often obscures the fundamentally achievable performance, causing high background hole densities, accelerating charge-carrier recombination, lowering charge-carrier mobilities, and blue-shifting absorption onsets through the Burstein-Moss effect. We evaluate impacts on photovoltaic device performance, and conclude with an outlook on remaining challenges and promising future directions in this area.

Perovskite-inspired materials for photovoltaics and beyond-from design to devices

Lead-halide perovskites have demonstrated astonishing increases in power conversion efficiency in photovoltaics over the last decade. The most efficient perovskite devices now outperform industry-standard multi-crystalline silicon solar cells, despite the fact that perovskites are typically grown at low temperature using simple solution-based methods. However, the toxicity of lead and its ready solubility in water are concerns for widespread implementation. These challenges, alongside the many successes of the perovskites, have motivated significant efforts across multiple disciplines to find lead-free and stable alternatives which could mimic the ability of the perovskites to achieve high performance with low temperature, facile fabrication methods. This Review discusses the computational and experimental approaches that have been taken to discover lead-free perovskite-inspired materials, and the recent successes and challenges in synthesizing these compounds. The atomistic origins of the extraordinary performance exhibited by lead-halide perovskites in photovoltaic devices is discussed, alongside the key challenges in engineering such high-performance in alternative, next-generation materials. Beyond photovoltaics, this Review discusses the impact perovskite-inspired materials have had in spurring efforts to apply new materials in other optoelectronic applications, namely light-emitting diodes, photocatalysts, radiation detectors, thin film transistors and memristors. Finally, the prospects and key challenges faced by the field in advancing the development of perovskite-inspired materials towards realization in commercial devices is discussed.

Relaxed Current Matching Requirements in Highly Luminescent Perovskite Tandem Solar Cells and Their Fundamental Efficiency Limits

Perovskite-based tandem solar cells are of increasing interest as they approach commercialization. Here we use experimental parameters from optical spectroscopy measurements to calculate the limiting efficiency of perovskite-silicon and all-perovskite two-terminal tandems, employing currently available bandgap materials, as 42.0% and 40.8%, respectively. We show luminescence coupling between subcells (the optical transfer of photons from the high-bandgap to low-bandgap subcell) relaxes current matching when the high-bandgap subcell is a luminescent perovskite. We calculate that luminescence coupling becomes important at charge trapping rates (≤10⁶ s^-1) already being achieved in relevant halide perovskites. Luminescence coupling increases flexibility in subcell thicknesses and tolerance to different spectral conditions. For maximal benefit, the high-bandgap subcell should have the higher short-circuit current under average spectral conditions. This can be achieved by reducing the bandgap of the high-bandgap subcell, allowing wider, unstable bandgap compositions to be avoided. Lastly, we visualize luminescence coupling in an all-perovskite tandem through cross-section luminescence imaging.

Recent progress in hybrid perovskite solar cells through scanning tunneling microscopy and spectroscopy

Currently, sustainable renewable energy sources are urgently required to fulfill the cumulative energy needs of the world's 7.8 billion population, since the conventional coal and fossil fuels will be exhausted soon. Photovoltaic devices are a direct and efficient means to produce a huge amount of energy to meet these energy targets. In particular, hybrid-perovskite-based photovoltaic devices merit special attention not only due to their exceptional efficiency for generating appreciable energy but also their tunable band gaps and the ease of device fabrication. However, the commercialization of such devices suffers from the instability of the compositional materials. The cause of instability is the perovskite's structure and its morphology at the sub-molecular level; thereby revealing and eliminating these instabilities are a striking challenge. To address this issue, scanning tunneling microscopy/spectroscopy (STM/STS) presents a comprehensive method to allow the visualization of the morphology and electronic structure of materials at atomic-level resolution. Here, we review the recent developments of perovskite-based solar cells (PSCs), the STM/STS analysis of photoactive halide/hybrid and oxide materials, and the real-time STM/STS investigation of electronic structures with defects and traps that are believed to mainly affect device performances. The detailed STM/STS analysis can facilitate a better understanding of the properties of materials at the nanoscale. This informative study may hold great promise to advance the development of stable PSCs under atmospheric conditions.

Efficient Carrier Multiplication in Low Band Gap Mixed Sn/Pb Halide Perovskites

Carrier multiplication (CM) generates multiple electron-hole pairs in a semiconductor from a single absorbed photon with energy exceeding twice the band gap. Thus, CM provides a promising way to circumvent the Shockley-Queisser limit of solar cells. The ideal material for CM should have significant overlap with the solar spectrum and should be able to fully utilize the excess energy above the band gap for additional charge carrier generation. We report efficient CM in mixed Sn/Pb halide perovskites (band gap of 1.28 eV) with onset just above twice the band gap. The CM rate outcompetes the carrier cooling process leading to efficient CM with a quantum yield of 2 for photoexcitation at 2.8 times the band gap. Such efficient CM characteristics add to the many advantageous properties of mixed Sn/Pb metal halide perovskites for photovoltaic applications.

Tin versus Lead Redox Chemistry Modulates Charge Trapping and Self-Doping in Tin/Lead Iodide Perovskites

Tin halide perovskites make up the only lead-free material class endowed with optoelectronic properties comparable to those of lead iodide perovskites. Despite significant progress, the device efficiency and stability of tin halide perovskites are still limited by two potentially related phenomena, i.e., self-p-doping and tin oxidation. Both processes are likely related to defects; thus, understanding tin halide defect chemistry is a key step toward exploitation of this class of materials. We investigate the MASnI₃ perovskite defect chemistry, as a prototype of the entire materials class, using state-of-the-art density functional theory simulations. We show that the inherently low ionization potential of MASnI₃ is solely responsible of the high stability of tin vacancy and interstitial iodine defects, which are in turn at the origin of the material p-doping. Tin vacancies create a locally iodine-rich environment that could promote Sn(II) → Sn(IV) oxidation. The higher band edge energies of MASnI₃ compared to those of MAPbI₃ lead to the emergence of deep electron traps associated with undercoordinated tin defects (e.g., interstitial tin) and the suppression of deep transitions associated with undercoordinated iodine defects that are typical of MAPbI₃. Thus, while lead iodide perovskites are dominated by iodine chemistry, tin chemistry dominates tin iodide perovskite defect chemistry. Mixed tin/lead perovskites exhibit an intermediate behavior and are predicted to be potentially free of deep traps. Compositional alloying with different metals is finally explored as a strategy for mitigating defect formation and self-p-doping in tin iodide perovskites.

Minimizing Defect States in Lead Halide Perovskite Solar Cell Materials

In order to reach the theoretical efficiency limits of lead-based metal halide perovskite solar cells, the voltage should be enhanced because it suffers from non-radiative recombination. Perovskite materials contain intrinsic defects that can act as Shockley–Read–Hall recombination centers. Several experimental and computational studies have characterized such defect states within the band gap. We give a systematic overview of compositional engineering by distinguishing the different defect-reducing mechanisms. Doping effects are divided into influences on: (1) crystallization; (2) lattice properties. Incorporation of dopant influences the lattice properties by: (a) lattice strain relaxation; (b) chemical bonding enhancement; (c) band gap tuning. The intrinsic lattice strain in undoped perovskite was shown to induce vacancy formation. The incorporation of smaller ions, such as Cl, F and Cd, increases the energy for vacancy formation. Zn doping is reported to induce strain relaxation but also to enhance the chemical bonding. The combination of computational studies using (DFT) calculations quantifying and qualifying the defect-reducing propensities of different dopants with experimental studies is essential for a deeper understanding and unraveling insights, such as the dynamics of iodine vacancies and the photochemistry of the iodine interstitials, and can eventually lead to a more rational approach in the search for optimal photovoltaic materials.

Controlling the Growth Kinetics and Optoelectronic Properties of 2D/3D Lead-Tin Perovskite Heterojunctions

Halide perovskites are emerging as valid alternatives to conventional photovoltaic active materials owing to their low cost and high device performances. This material family also shows exceptional tunability of properties by varying chemical components, crystal structure, and dimensionality, providing a unique set of building blocks for new structures. Here, highly stable self-assembled lead-tin perovskite heterostructures formed between low-bandgap 3D and higher-bandgap 2D components are demonstrated. A combination of surface-sensitive X-ray diffraction, spatially resolved photoluminescence, and electron microscopy measurements is used to reveal that microstructural heterojunctions form between high-bandgap 2D surface crystallites and lower-bandgap 3D domains. Furthermore, in situ X-ray diffraction measurements are used during film formation to show that an ammonium thiocyanate additive delays formation of the 3D component and thus provides a tunable lever to substantially increase the fraction of 2D surface crystallites. These novel heterostructures will find use in bottom cells for stable tandem photovoltaics with a surface 2D layer passivating the 3D material, or in energy-transfer devices requiring controlled energy flow from localized surface crystallites to the bulk.