1
|
Bai C, Wu G, Yang J, Zeng J, Liu Y, Wang J. 2D materials-based photodetectors combined with ferroelectrics. NANOTECHNOLOGY 2024; 35:352001. [PMID: 38697050 DOI: 10.1088/1361-6528/ad4652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Accepted: 05/01/2024] [Indexed: 05/04/2024]
Abstract
Photodetectors are essential optoelectronic devices that play a critical role in modern technology by converting optical signals into electrical signals, which are one of the most important sensors of the informational devices in current 'Internet of Things' era. Two-dimensional (2D) material-based photodetectors have excellent performance, simple design and effortless fabrication processes, as well as enormous potential for fabricating highly integrated and efficient optoelectronic devices, which has attracted extensive research attention in recent years. The introduction of spontaneous polarization ferroelectric materials further enhances the performance of 2D photodetectors, moreover, companying with the reduction of power consumption. This article reviews the recent advances of materials, devices in ferroelectric-modulated photodetectors. This review starts with the introduce of the basic terms and concepts of the photodetector and various ferroelectric materials applied in 2D photodetectors, then presents a variety of typical device structures, fundamental mechanisms and potential applications under ferroelectric polarization modulation. Finally, we summarize the leading challenges currently confronting ferroelectric-modulated photodetectors and outline their future perspectives.
Collapse
Affiliation(s)
- Chongyang Bai
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Guangjian Wu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Jing Yang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, People's Republic of China
| | - Jinhua Zeng
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Yihan Liu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Jianlu Wang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| |
Collapse
|
2
|
Jin Q, Men K, Li G, Ou T, Lian Z, Deng X, Zhao H, Zhang Q, Ming A, Wei Q, Wei F, Tu H. Ultrasensitive Graphene Field-Effect Biosensors Based on Ferroelectric Polarization of Lithium Niobate for Breast Cancer Marker Detection. ACS APPLIED MATERIALS & INTERFACES 2024; 16:28896-28904. [PMID: 38770712 DOI: 10.1021/acsami.4c05860] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Herein, we present a novel ultrasensitive graphene field-effect transistor (GFET) biosensor based on lithium niobate (LiNbO3) ferroelectric substrate for the application of breast cancer marker detection. The electrical properties of graphene are varied under the electrostatic field, which is generated through the spontaneous polarization of the ferroelectric substrate. It is demonstrated that the properties of interface between graphene and solution are also altered due to the interaction between the electrostatic field and ions. Compared with the graphene field-effect biosensor based on the conventional Si/SiO2 gate structure, our biosensor achieves a higher sensitivity to 64.7 mV/decade and shows a limit of detection down to 1.7 fM (equivalent to 12 fg·mL-1) on the detection of microRNA21 (a breast cancer marker). This innovative design combining GFETs with ferroelectric substrates holds great promise for developing an ultrahigh-sensitivity biosensing platform based on graphene that enables rapid and early disease diagnosis.
Collapse
Affiliation(s)
- Qingxi Jin
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRIMAT Engineering Institute Co., Ltd., Beijing 101407, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Kuo Men
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRIMAT Engineering Institute Co., Ltd., Beijing 101407, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Gangrong Li
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRINM (Guangdong) Institute for Advanced Materials and Technology, Foshan 528000, China
| | - Tianlang Ou
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRINM (Guangdong) Institute for Advanced Materials and Technology, Foshan 528000, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Ziwei Lian
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRIMAT Engineering Institute Co., Ltd., Beijing 101407, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Xin Deng
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRIMAT Engineering Institute Co., Ltd., Beijing 101407, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Qingzhu Zhang
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
| | - Anjie Ming
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRIMAT Engineering Institute Co., Ltd., Beijing 101407, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Qianhui Wei
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRINM (Guangdong) Institute for Advanced Materials and Technology, Foshan 528000, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Feng Wei
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- GRINM (Guangdong) Institute for Advanced Materials and Technology, Foshan 528000, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| | - Hailing Tu
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co., Ltd., Beijing 100088, China
- General Research Institute for Nonferrous Metals, Beijing 100088, China
| |
Collapse
|
3
|
Pham PV, Mai TH, Do HB, Vasundhara M, Nguyen VH, Nguyen T, Bui HV, Dao VD, Gupta RK, Ponnusamy VK, Park JH. Layer-by-layer thinning of two-dimensional materials. Chem Soc Rev 2024; 53:5190-5226. [PMID: 38586901 DOI: 10.1039/d3cs00817g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
Etching technology - one of the representative modern semiconductor device makers - serves as a broad descriptor for the process of removing material from the surfaces of various materials, whether partially or entirely. Meanwhile, thinning technology represents a novel and highly specialized approach within the realm of etching technology. It indicates the importance of achieving an exceptionally sophisticated and precise removal of material, layer-by-layer, at the nanoscale. Notably, thinning technology has gained substantial momentum, particularly in top-down strategies aimed at pushing the frontiers of nano-worlds. This rapid development in thinning technology has generated substantial interest among researchers from diverse backgrounds, including those in the fields of chemistry, physics, and engineering. Precisely and expertly controlling the layer numbers of 2D materials through the thinning procedure has been considered as a crucial step. This is because the thinning processes lead to variations in the electrical and optical characteristics. In this comprehensive review, the strategies for top-down thinning of representative 2D materials (e.g., graphene, black phosphorus, MoS2, h-BN, WS2, MoSe2, and WSe2) based on conventional plasma-assisted thinning, integrated cyclic plasma-assisted thinning, laser-assisted thinning, metal-assisted splitting, and layer-resolved splitting are covered in detail, along with their mechanisms and benefits. Additionally, this review further explores the latest advancements in terms of the potential advantages of semiconductor devices achieved by top-down 2D material thinning procedures.
Collapse
Affiliation(s)
- Phuong V Pham
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - The-Hung Mai
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - Huy-Binh Do
- Faculty of Applied Science, Ho Chi Minh City University of Technology and Education, Thu Duc 700000, Vietnam
| | - M Vasundhara
- Polymers and Functional Materials Department, CSIR-Indian Institute of Chemical Technology, Tarnaka, Hyderabad 500007, India
| | - Van-Huy Nguyen
- Centre for Herbal Pharmacology and Environmental Sustainability, Chettinad Hospital and Research Institute, Chettinad Academy of Research and Education, Kelambakkam-603103, Tamil Nadu, India
| | - Trieu Nguyen
- Shared Research Facilities, West Virginia University, Morgantown, WV 26506, USA
| | - Hao Van Bui
- Faculty of Materials Science and Engineering and Faculty of Electrical and Electronic Engineering, Phenikaa University, Hanoi 12116, Vietnam
| | - Van-Duong Dao
- Faculty of Biotechnology, Chemistry, and Environmental Engineering, Phenikaa University, Hanoi 100000, Vietnam
| | - Ram K Gupta
- Department of Chemistry, Kansas Polymer Research Center, Pittsburg State University, Pittsburg, KS-66762, USA
| | - Vinoth Kumar Ponnusamy
- Department of Medicinal and Applied Chemistry, Kaohsiung Medical University, Kaohsiung 807, Taiwan.
- Research Center for Precision Environmental Medicine, Kaohsiung Medical University, Kaohsiung 807, Taiwan
- Department of Medical Research, Kaohsiung Medical University Hospital, Kaohsiung 807, Taiwan
- Department of Chemistry, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, South Korea.
| |
Collapse
|
4
|
Meng G, She J, Yu H, Li Q, Liu X, Yin Z, Cheng Y. Polarizable Nonvolatile Ferroelectric Gating in Monolayer MoS 2 Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:10316-10324. [PMID: 38381062 DOI: 10.1021/acsami.3c15533] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Given the requirements for power and dimension scaling, modulating channel transport properties using high gate bias is unfavorable due to the introduction of severe leakages and large power dissipation. Hence, this work presents an ultrathin phototransistor with chemical-vapor-deposition-grown monolayer MoS2 as the channel and a 10.2 nm thick Al:HfO2 ferroelectric film as the dielectric. The proposed device is meticulously modulated utilizing an Al:HfO2 nanofilm, which passivates traps and suppresses charge Coulomb scattering with Al doping, efficiently improving carrier transport and inhibiting leakage current. Furthermore, a bipolar pulses excitable polarization method is developed to induce a nonvolatile electrostatic field. The MoS2 channel is fully depleted by the switchable and stable floating gate originating from remanent polarization, leading to a high detectivity of 2.05 × 1011 Jones per nanometer of gating layer (Jones nm-1) and photocurrent on/off ratio >104 nm-1, which are superior to the state-of-the-art phototransistors based on two-dimensional (2D) materials and ferroelectrics. The proposed polarizable nonvolatile ferroelectric gating in a monolayer MoS2 phototransistor promises a potential route toward ultrasensitive photodetectors with low power consumption that boast of high levels of integration.
Collapse
Affiliation(s)
- Guodong Meng
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Junyi She
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hao Yu
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Qiang Li
- School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xin Liu
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zongyou Yin
- Research School of Chemistry, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yonghong Cheng
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| |
Collapse
|
5
|
Zhou Y, Yang C, Fu X, Liu Y, Yang Y, Wu Y, Ge C, Min T, Zeng K, Li T. Optical Modulation of MoTe 2/Ferroelectric Heterostructure via Interface Doping. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38411594 DOI: 10.1021/acsami.3c18179] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/28/2024]
Abstract
Optical modulation through interface doping offers a convenient and efficient way to control ferroelectric polarization, thereby advancing the utilization of ferroelectric heterostructures in nanoelectronic and optoelectronic devices. In this work, we fabricated heterostructures of MoTe2/BaTiO3/La0.7Sr0.3MnO3 (MoTe2/BTO/LSMO) and demonstrated opposite ultraviolet (UV) light-induced polarization switching behaviors depending on the varied thicknesses of MoTe2. The thickness-dependent band structure of MoTe2 film results in interface doping with opposite polarity in the respective heterostructures. The polarization field of BTO interacts with the interface charges, and an enhanced effective built-in field (Ebi) can trigger the transfer of massive UV light-induced carriers in both MoTe2 and BTO films. As a result, the interplay among the contact field of MoTe2/BTO, the polarization field, and the optically excited carriers determines the UV light-induced polarization switching behavior of the heterostructures. In addition, the electric transport characteristics of MoTe2/BTO/LSMO heterostructures reveal the interface barrier height and Ebi under opposite polarization states, as well as the presence of inherent in-gap trap states in MoTe2 and BTO films. These findings represent a further step toward achieving multifield modulation of the ferroelectric polarization and promote the potential applications in optoelectronic, logic, memory, and synaptic ferroelectric devices.
Collapse
Affiliation(s)
- Yuqing Zhou
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
- Department of Mechanical Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Chao Yang
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xingke Fu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yadong Liu
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yulin Yang
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yongyi Wu
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Tai Min
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Kaiyang Zeng
- Department of Mechanical Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Tao Li
- Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| |
Collapse
|
6
|
Liu J, Su L, Zhang X, Shtansky DV, Fang X. Ferroelectric-Optoelectronic Hybrid System for Photodetection. SMALL METHODS 2024; 8:e2300319. [PMID: 37312397 DOI: 10.1002/smtd.202300319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2023] [Revised: 04/28/2023] [Indexed: 06/15/2023]
Abstract
Photodetectors (PDs), as functional devices based on photon-to-electron conversion, are an indispensable component for the next-generation Internet of Things system. The research of advanced and efficient PDs that meet the diverse demands is becoming a major task. Ferroelectric materials can develop a unique spontaneous polarization due to the symmetry-breaking of the unit cell, which is switchable under an external electric field. Ferroelectric polarization field has the intrinsic characteristics of non-volatilization and rewritability. Introducing ferroelectrics to effectively manipulate the band bending and carrier transport can be non-destructive and controllable in the ferroelectric-optoelectronic hybrid systems. Hence, ferroelectric integration offers a promising strategy for high-performance photoelectric detection. This paper reviews the fundamentals of optoelectronic and ferroelectric materials, and their interactions in hybrid photodetection systems. The first section introduces the characteristics and applications of typical optoelectronic and ferroelectric materials. Then, the interplay mechanisms, modulation effects, and typical device structures of ferroelectric-optoelectronic hybrid systems are discussed. Finally, in summary and perspective section, the progress of ferroelectrics integrated PDs is summed up and the challenges of ferroelectrics in the field of optoelectronics are considered.
Collapse
Affiliation(s)
- Jie Liu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Li Su
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Xinglong Zhang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Dmitry V Shtansky
- National University of Science and Technology "MISIS", Moscow, 119049, Russia
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| |
Collapse
|
7
|
Mukherjee S, Dutta D, Ghosh A, Koren E. Graphene-In 2Se 3 van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation. ACS NANO 2023; 17:22287-22298. [PMID: 37930899 DOI: 10.1021/acsnano.3c03820] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2023]
Abstract
Functional diversification at the single-device level has become essential for emerging optical neural network (ONN) development. Stable ferroelectricity harnessed with strong light sensitivity in α-In2Se3 holds great potential for developing ultrathin neuromorphic devices. Herein, we demonstrated an all-2D van der Waals heterostructure-based programmable synaptic field effect transistor (FET) utilizing a ferroelectric α-In2Se3 nanosheet and monolayer graphene. The devices exhibited reconfigurable, multilevel nonvolatile memory (NVM) states, which can be successively modulated by multiple dual-mode (optical and electrical) stimuli and thereby used to realize energy-efficient, heterosynaptic functionalities in a biorealistic fashion. Furthermore, under light illumination, the prototypical device can toggle between volatile (photodetector) and nonvolatile optical random-access memory (ORAM) logic operation, depending upon the ferroelectric-dipole induced band adjustment. Finally, plasticity modulation from short-term to prominent long-term characteristics over a wide dynamic range was demonstrated. The inherent operation mechanism owing to the switchable polarization-induced electronic band alignment and bidirectional barrier height modulation at the heterointerface was revealed by conjugated electronic transport and Kelvin-probe force microscopy (KPFM) measurements. Overall, robust (opto)electronic weight controllability for integrated in-sensor and in-memory logic processors and multibit ORAM systems was readily accomplished by the synergistic ferrophotonic heterostructure properties. Our presented results facilitate the technological implementation of versatile all-2D heterosynapses for next-generation perception, optoelectronic logic systems, and Internet-of-Things (IoT) entities.
Collapse
Affiliation(s)
- Subhrajit Mukherjee
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Debopriya Dutta
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Anurag Ghosh
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| | - Elad Koren
- Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel
| |
Collapse
|
8
|
Yuan J, Dai JQ, Liu YZ, Zhao MW. Polarization-tunable interfacial properties in monolayer-MoS 2 transistors integrated with ferroelectric BiAlO 3(0001) polar surfaces. Phys Chem Chem Phys 2023; 25:25177-25190. [PMID: 37712428 DOI: 10.1039/d3cp02866f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/16/2023]
Abstract
With the explosion of data-centric applications, new in-memory computing technologies, based on nonvolatile memory devices, have become competitive due to their merged logic-memory functionalities. Herein, employing first-principles quantum transport simulation, we theoretically investigate for the first time the electronic and contact properties of two types of monolayer (ML)-MoS2 ferroelectric field-effect transistors (FeFETs) integrated with ferroelectric BiAlO3(0001) (BAO(0001)) polar surfaces. Our study finds that the interfacial properties of the investigated partial FeFET devices are highly tunable by switching the electric polarization of the ferroelectric BAO(0001) dielectric. Specifically, the transition from quasi-Ohmic to the Schottky contact, as well as opposite contact polarity of respective n-type and p-type Schottky contact under two polarization states can be obtained, suggesting their superior performance metrics in terms of nonvolatile information storage. In addition, due to the feature of (quasi-)Ohmic contact in some polarization states, the explored FeFET devices, even when operating in the regular field-effect transistor (FET) mode, can be extremely significant in realizing a desirable low threshold voltage and interfacial contact resistance. In conjunction with the formed van der Waals (vdW) interfaces in ML-MoS2/ferroelectric systems with an interlayer, the proposed FeFETs are expected to provide excellent device performance with regard to cycling endurance and memory density.
Collapse
Affiliation(s)
- Jin Yuan
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Jian-Qing Dai
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Yu-Zhu Liu
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| | - Miao-Wei Zhao
- Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, P. R. China.
| |
Collapse
|
9
|
You T, Zhao M, Fan Z, Ju C. Emerging Memtransistors for Neuromorphic System Applications: A Review. SENSORS (BASEL, SWITZERLAND) 2023; 23:5413. [PMID: 37420582 PMCID: PMC10302604 DOI: 10.3390/s23125413] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 03/10/2023] [Accepted: 05/30/2023] [Indexed: 07/09/2023]
Abstract
The von Neumann architecture with separate memory and processing presents a serious challenge in terms of device integration, power consumption, and real-time information processing. Inspired by the human brain that has highly parallel computing and adaptive learning capabilities, memtransistors are proposed to be developed in order to meet the requirement of artificial intelligence, which can continuously sense the objects, store and process the complex signal, and demonstrate an "all-in-one" low power array. The channel materials of memtransistors include a range of materials, such as two-dimensional (2D) materials, graphene, black phosphorus (BP), carbon nanotubes (CNT), and indium gallium zinc oxide (IGZO). Ferroelectric materials such as P(VDF-TrFE), chalcogenide (PZT), HfxZr1-xO2(HZO), In2Se3, and the electrolyte ion are used as the gate dielectric to mediate artificial synapses. In this review, emergent technology using memtransistors with different materials, diverse device fabrications to improve the integrated storage, and the calculation performance are demonstrated. The different neuromorphic behaviors and the corresponding mechanisms in various materials including organic materials and semiconductor materials are analyzed. Finally, the current challenges and future perspectives for the development of memtransistors in neuromorphic system applications are presented.
Collapse
Affiliation(s)
- Tao You
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics of the Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (T.Y.)
- University of Chinese Academy of Sciences, Beijing 100029, China
| | - Miao Zhao
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics of the Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (T.Y.)
- University of Chinese Academy of Sciences, Beijing 100029, China
| | - Zhikang Fan
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics of the Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (T.Y.)
- University of Chinese Academy of Sciences, Beijing 100029, China
| | - Chenwei Ju
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics of the Chinese Academy of Sciences, 3 Beitucheng West Road, Beijing 100029, China; (T.Y.)
- University of Chinese Academy of Sciences, Beijing 100029, China
| |
Collapse
|
10
|
Yan Y, Yu N, Yu Z, Su Y, Chen J, Xiang T, Han Y, Wang J. Optoelectronic Synaptic Memtransistor Based on 2D SnSe/MoS 2 van der Waals Heterostructure under UV-Ozone Treatment. SMALL METHODS 2023; 7:e2201679. [PMID: 36929317 DOI: 10.1002/smtd.202201679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Revised: 02/23/2023] [Indexed: 06/09/2023]
Abstract
Memristive switching devices with electrically and optically invoked synaptic behaviors show great promise in constructing an artificial biological visual system. Through rational design and integration, 2D materials and their van der Waals (vdW) heterostructures can be applied to realize multifunctional optoelectronic devices. Here, a multifunctional optoelectronic synaptic memtransistor based on a SnSe/MoS2 vdW p-n heterojunction to simulate the human biological visual system is reported. By employing simple mild UV-ozone treatment, the device exhibits reversible resistive switching (RS) behavior with switching ratio up to 103 . The retina-like selective response to different input light wavelengths is activated, as well as programmable multilevel resistance states and long-term synaptic plasticity. Moreover, memory and logic functions analogous to those found in the visual cortex of the brain are performed by controlling the optical and electrical input signals. This work proposes a feasible strategy to modulate RS in vdW heterostructures for memristive devices, which show significant potential for neuromorphic processing.
Collapse
Affiliation(s)
- Yuling Yan
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Niannian Yu
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Ziyan Yu
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Yupeng Su
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Jiawei Chen
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Tao Xiang
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Yuenan Han
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| | - Jiafu Wang
- School of Science, Wuhan University of Technology, Wuhan, 430070, China
| |
Collapse
|
11
|
Yang AJ, Wang SX, Xu J, Loh XJ, Zhu Q, Wang XR. Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices. ACS NANO 2023. [PMID: 37171107 DOI: 10.1021/acsnano.3c00429] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
As the Si-based transistors scale down to atomic dimensions, the basic principle of current electronics, which heavily relies on the tunable charge degree of freedom, faces increasing challenges to meet the future requirements of speed, switching energy, heat dissipation, and packing density as well as functionalities. Heterogeneous integration, where dissimilar layers of materials and functionalities are unrestrictedly stacked at an atomic scale, is appealing for next-generation electronics, such as multifunctional, neuromorphic, spintronic, and ultralow-power devices, because it unlocks technologically useful interfaces of distinct functionalities. Recently, the combination of functional perovskite oxides and two-dimensional layered materials (2DLMs) led to unexpected functionalities and enhanced device performance. In this paper, we review the recent progress of the heterogeneous integration of perovskite oxides and 2DLMs from the perspectives of fabrication and interfacial properties, electronic applications, and challenges as well as outlooks. In particular, we focus on three types of attractive applications, namely field-effect transistors, memory, and neuromorphic electronics. The van der Waals integration approach is extendible to other oxides and 2DLMs, leading to almost unlimited combinations of oxides and 2DLMs and contributing to future high-performance electronic and spintronic devices.
Collapse
Affiliation(s)
- Allen Jian Yang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Su-Xi Wang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Jianwei Xu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Xian Jun Loh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Qiang Zhu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Xiao Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
| |
Collapse
|
12
|
Duan Y, Song M, Sun F, Xu Y, Shi F, Wang H, Zheng Y, He C, Liu X, Wei C, Deng X, Chen L, Liu F, Wang D. Controlling Isomerization of Photoswitches to Modulate 2D Logic-in-Memory Devices by Organic-Inorganic Interfacial Strategy. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207443. [PMID: 36905234 PMCID: PMC10161064 DOI: 10.1002/advs.202207443] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Revised: 01/31/2023] [Indexed: 05/06/2023]
Abstract
Logic-in-memory devices are a promising and powerful approach to realize data processing and storage driven by electrical bias. Here, an innovative strategy is reported to achieve the multistage photomodulation of 2D logic-in-memory devices, which is realized by controlling the photoisomerization of donor-acceptor Stenhouse adducts (DASAs) on the surface of graphene. Alkyl chains with various carbon spacer lengths (n = 1, 5, 11, and 17) are introduced onto DASAs to optimize the organic-inorganic interfaces: 1) Prolonging the carbon spacers weakens the intermolecular aggregation and promotes isomerization in the solid state. 2) Too long alkyl chains induce crystallization on the surface and hinder the photoisomerization. Density functional theory calculation indicates that the photoisomerization of DASAs on the graphene surface is thermodynamically promoted by increasing the carbon spacer lengths. The 2D logic-in-memory devices are fabricated by assembling DASAs onto the surface. Green light irradiation increases the drain-source current (Ids ) of the devices, while heat triggers a reversed transfer. The multistage photomodulation is achieved by well-controlling the irradiation time and intensity. The strategy based on the dynamic control of 2D electronics by light integrates molecular programmability into the next generation of nanoelectronics.
Collapse
Affiliation(s)
- Yongli Duan
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Miaomiao Song
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Fanxi Sun
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Yi Xu
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Fanfan Shi
- Department of Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Hong Wang
- Department of Physics, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Yonghao Zheng
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
- Department of Orthopedic, Sichuan Provincial People's Hospital and Sichuan Academy of Medical Science and Affiliated Hospital of University of Electronic Science and Technology of China, Chengdu, 610072, P. R. China
| | - Chao He
- College of Polymer Science and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Xilin Liu
- Department of Orthopedic, Sichuan Provincial People's Hospital and Sichuan Academy of Medical Science and Affiliated Hospital of University of Electronic Science and Technology of China, Chengdu, 610072, P. R. China
| | - Chen Wei
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Xu Deng
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Longquan Chen
- School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Dongsheng Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| |
Collapse
|
13
|
Jia C, Wu S, Fan J, Luo C, Fan M, Li M, He L, Yang Y, Zhang H. Ferroelectrically Modulated and Enhanced Photoresponse in a Self-Powered α-In 2Se 3/Si Heterojunction Photodetector. ACS NANO 2023; 17:6534-6544. [PMID: 36952315 PMCID: PMC10100568 DOI: 10.1021/acsnano.2c11925] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 02/08/2023] [Indexed: 06/18/2023]
Abstract
Photodetectors have been applied to pivotal optoelectronic components of modern optical communication, sensing, and imaging systems. As a room-temperature ferroelectric van der Waals semiconductor, 2D α-In2Se3 is a promising candidate for a next-generation optoelectronic material because of its thickness-dependent direct bandgap and excellent optoelectronic performance. Previous studies of photodetectors based on α-In2Se3 have been rarely focused on the modulated relationship between the α-In2Se3 intrinsic ferroelectricity and photoresponsivity. Herein, a simple integrated process and high-performance photodetector based on an α-In2Se3/Si vertical hybrid-dimensional heterojunction was constructed. Our photodetector in the ferroelectric polarization up state accomplishes a self-powered, highly sensitive photoresponse with an on/off ratio of 4.5 × 105 and detectivity of 1.6 × 1013 Jones, and it also shows a fast response time with 43 μs. The depolarization field generated by the remanent polarization of ferroelectrics in α-In2Se3 provides a strategy for enhancement and modulation of photodetection. The negative correlation was discovered because the enhancement photoresponsivity factor of ferroelectric modulation competes with the photovoltaic behavior within the α-In2Se3/Si heterojunction. Our research highlights the great potential of the high-efficiency heterojunction photodetector for future object recognition and photoelectric imaging.
Collapse
Affiliation(s)
- Cheng Jia
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Shuangxiang Wu
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Jinze Fan
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Chaojie Luo
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Minghui Fan
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Instruments
Center for Physical Science, University
of Science and Technology of China, Hefei, Anhui 230026, China
| | - Ming Li
- Instruments
Center for Physical Science, University
of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lanping He
- Department
of Physics, School of Physics, Hefei University
of Technology, Hefei 230009, China
| | - Yuanjun Yang
- Department
of Physics, School of Physics, Hefei University
of Technology, Hefei 230009, China
| | - Hui Zhang
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
- Department
of Physics, University of Science and Technology
of China, Hefei 230026, China
| |
Collapse
|
14
|
Soliman M, Maity K, Gloppe A, Mahmoudi A, Ouerghi A, Doudin B, Kundys B, Dayen JF. Photoferroelectric All-van-der-Waals Heterostructure for Multimode Neuromorphic Ferroelectric Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15732-15744. [PMID: 36919904 PMCID: PMC10375436 DOI: 10.1021/acsami.3c00092] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Interface-driven effects in ferroelectric van der Waals (vdW) heterostructures provide fresh opportunities in the search for alternative device architectures toward overcoming the von Neumann bottleneck. However, their implementation is still in its infancy, mostly by electrical control. It is of utmost interest to develop strategies for additional optical and multistate control in the quest for novel neuromorphic architectures. Here, we demonstrate the electrical and optical control of the ferroelectric polarization states of ferroelectric field effect transistors (FeFET). The FeFETs, fully made of ReS2/hBN/CuInP2S6 vdW materials, achieve an on/off ratio exceeding 107, a hysteresis memory window up to 7 V wide, and multiple remanent states with a lifetime exceeding 103 s. Moreover, the ferroelectric polarization of the CuInP2S6 (CIPS) layer can be controlled by photoexciting the vdW heterostructure. We perform wavelength-dependent studies, which allow for identifying two mechanisms at play in the optical control of the polarization: band-to-band photocarrier generation into the 2D semiconductor ReS2 and photovoltaic voltage into the 2D ferroelectric CIPS. Finally, heterosynaptic plasticity is demonstrated by operating our FeFET in three different synaptic modes: electrically stimulated, optically stimulated, and optically assisted synapse. Key synaptic functionalities are emulated including electrical long-term plasticity, optoelectrical plasticity, optical potentiation, and spike rate-dependent plasticity. The simulated artificial neural networks demonstrate an excellent accuracy level of 91% close to ideal-model synapses. These results provide a fresh background for future research on photoferroelectric vdW systems and put ferroelectric vdW heterostructures on the roadmap for the next neuromorphic computing architectures.
Collapse
Affiliation(s)
- Mohamed Soliman
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Krishna Maity
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Arnaud Gloppe
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Aymen Mahmoudi
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France
| | - Abdelkarim Ouerghi
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France
| | - Bernard Doudin
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
- Institut Universitaire de France (IUF), 1 rue Descartes, 75231 cedex 05 Paris, France
| | - Bohdan Kundys
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Jean-Francois Dayen
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
- Institut Universitaire de France (IUF), 1 rue Descartes, 75231 cedex 05 Paris, France
| |
Collapse
|
15
|
Li D, Huang X, Wu Q, Zhang L, Lu Y, Hong X. Ferroelectric Domain Control of Nonlinear Light Polarization in MoS 2 via PbZr 0.2 Ti 0.8 O 3 Thin Films and Free-Standing Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208825. [PMID: 36462168 DOI: 10.1002/adma.202208825] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2022] [Revised: 11/08/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) such as MoS2 exhibit exceptionally strong nonlinear optical responses, while nanoscale control of the amplitude, polar orientation, and phase of the nonlinear light in TMDCs remains challenging. In this work, by interfacing monolayer MoS2 with epitaxial PbZr0.2 Ti0.8 O3 (PZT) thin films and free-standing PZT membranes, the amplitude and polarization of the second harmonic generation (SHG) signal are modulated via ferroelectric domain patterning, which demonstrates that PZT membranes can lead to in-operando programming of nonlinear light polarization. The interfacial coupling of the MoS2 polar axis with either the out-of-plane polar domains of PZT or the in-plane polarization of domain walls tailors the SHG light polarization into different patterns with distinct symmetries, which are modeled via nonlinear electromagnetic theory. This study provides a new material platform that enables reconfigurable design of light polarization at the nanoscale, paving the path for developing novel optical information processing, smart light modulators, and integrated photonic circuits.
Collapse
Affiliation(s)
- Dawei Li
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0299, USA
- School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian, Liaoning, 116024, China
| | - Xi Huang
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0511, USA
| | - Qiuchen Wu
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0299, USA
| | - Le Zhang
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0299, USA
| | - Yongfeng Lu
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0511, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0298, USA
| | - Xia Hong
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0299, USA
- Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0298, USA
| |
Collapse
|
16
|
Wang S, Liu X, Zhou P. The Road for 2D Semiconductors in the Silicon Age. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106886. [PMID: 34741478 DOI: 10.1002/adma.202106886] [Citation(s) in RCA: 33] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2021] [Revised: 10/21/2021] [Indexed: 06/13/2023]
Abstract
Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.
Collapse
Affiliation(s)
- Shuiyuan Wang
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoxian Liu
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- ASIC & System State Key Lab, School of Microelectronics, Fudan University, Shanghai, 200433, China
- Frontier Institute of Chip and System, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| |
Collapse
|
17
|
Xue F, Zhang C, Ma Y, Wen Y, He X, Yu B, Zhang X. Integrated Memory Devices Based on 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201880. [PMID: 35557021 DOI: 10.1002/adma.202201880] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2022] [Revised: 05/07/2022] [Indexed: 06/15/2023]
Abstract
With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on memory hardware implementation in terms of operation speed, energy consumption, and integration density. To fulfill these demands, 2D materials, which are excellent electronic building blocks, provide numerous possibilities for developing advanced memory device arrays with high performance, smart computing architectures, and desirable downscaling. Over the past few years, 2D-material-based memory-device arrays with different working mechanisms, including defects, filaments, charges, ferroelectricity, and spins, have been increasingly developed. These arrays can be used to implement brain-inspired computing or sensing with extraordinary performance, architectures, and functionalities. Here, recent research into integrated, state-of-the-art memory devices made from 2D materials, as well as their implications for brain-inspired computing are surveyed. The existing challenges at the array level are discussed, and the scope for future research is presented.
Collapse
Affiliation(s)
- Fei Xue
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yan Wen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xin He
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Bin Yu
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| |
Collapse
|
18
|
Buragohain P, Lu H, Richter C, Schenk T, Kariuki P, Glinsek S, Funakubo H, Íñiguez J, Defay E, Schroeder U, Gruverman A. Quantification of the Electromechanical Measurements by Piezoresponse Force Microscopy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206237. [PMID: 36210741 DOI: 10.1002/adma.202206237] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2022] [Revised: 09/10/2022] [Indexed: 06/16/2023]
Abstract
Piezoresponse force microscopy (PFM) is widely used for characterization and exploration of the nanoscale properties of ferroelectrics. However, quantification of the PFM signal is challenging due to the convolution of various extrinsic and intrinsic contributions. Although quantification of the PFM amplitude signal has received considerable attention, quantification of the PFM phase signal has not been addressed. A properly calibrated PFM phase signal can provide valuable information on the sign of the local piezoelectric coefficient-an important and nontrivial issue for emerging ferroelectrics. In this work, two complementary methodologies to calibrate the PFM phase signal are discussed. The first approach is based on using a standard reference sample with well-known independently measured piezoelectric coefficients, while the second approach exploits the electrostatic sample-cantilever interactions to determine the parasitic phase offset. Application of these methodologies to studies of the piezoelectric behavior in ferroelectric HfO2 -based thin-film capacitors reveals intriguing variations in the sign of the longitudinal piezoelectric coefficient, d33,eff . It is shown that the piezoelectric properties of the HfO2 -based capacitors are inherently sensitive to their thickness, electrodes, as well as deposition methods, and can exhibit wide variations including a d33,eff sign change within a single device.
Collapse
Affiliation(s)
- Pratyush Buragohain
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Haidong Lu
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| | - Claudia Richter
- NaMLab gGmbH, 01187, Noethnitzer Strasse 64 a, Dresden, Germany
| | - Tony Schenk
- Ferroelectric Memory GmbH, 01099, Charlotte-Bühler-Str. 12, Dresden, Germany
| | - Pamenas Kariuki
- NaMLab gGmbH, 01187, Noethnitzer Strasse 64 a, Dresden, Germany
| | - Sebastjan Glinsek
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
| | - Hiroshi Funakubo
- School of Materials and Chemical Technology, Tokyo Institute of Technology, Yokohama, 226-8502, Japan
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
| | - Emmanuel Defay
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
| | - Uwe Schroeder
- NaMLab gGmbH, 01187, Noethnitzer Strasse 64 a, Dresden, Germany
| | - Alexei Gruverman
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
| |
Collapse
|
19
|
Xiong Y, Xu D, Feng Y, Zhang G, Lin P, Chen X. P-Type 2D Semiconductors for Future Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2206939. [PMID: 36245325 DOI: 10.1002/adma.202206939] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
Collapse
Affiliation(s)
- Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Duo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| |
Collapse
|
20
|
Puebla S, Pucher T, Rouco V, Sanchez-Santolino G, Xie Y, Zamora V, Cuellar FA, Mompean FJ, Leon C, Island JO, Garcia-Hernandez M, Santamaria J, Munuera C, Castellanos-Gomez A. Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors. NANO LETTERS 2022; 22:7457-7466. [PMID: 36108061 PMCID: PMC9523702 DOI: 10.1021/acs.nanolett.2c02395] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-κ gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO2 dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices.
Collapse
Affiliation(s)
- Sergio Puebla
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain
| | - Thomas Pucher
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain
| | - Victor Rouco
- GFMC,
Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain
| | - Gabriel Sanchez-Santolino
- GFMC,
Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain
- Laboratorio
de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain
- Instituto
Pluridisciplinar, Universidad Complutense
de Madrid, 28040 Madrid, Spain
| | - Yong Xie
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain
- School
of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710071, China
| | - Victor Zamora
- GFMC,
Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain
| | - Fabian A. Cuellar
- GFMC,
Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain
| | - Federico J. Mompean
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain
- Laboratorio
de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain
| | - Carlos Leon
- GFMC,
Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain
- Laboratorio
de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain
| | - Joshua O. Island
- Department
of Physics and Astronomy, University of
Nevada Las Vegas, Las Vegas, Nevada 89154, United States
| | - Mar Garcia-Hernandez
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain
- Laboratorio
de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain
| | - Jacobo Santamaria
- GFMC,
Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain
- Laboratorio
de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain
| | - Carmen Munuera
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain
- Laboratorio
de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain
| | - Andres Castellanos-Gomez
- Materials
Science Factory, Instituto de Ciencia de
Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain
- Laboratorio
de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain
| |
Collapse
|
21
|
Tan H, Castro G, Lyu J, Loza-Alvarez P, Sánchez F, Fontcuberta J, Fina I. Control of up-to-down/down-to-up light-induced ferroelectric polarization reversal. MATERIALS HORIZONS 2022; 9:2345-2352. [PMID: 35968715 DOI: 10.1039/d2mh00644h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Light control of ferroelectric polarization is of interest for the exploitation of ferroelectric thin films in ultrafast data storage and logic functionalities. The rapidly oscillating electric field of light absorbed in a ferroelectric layer can suppress its polarization but cannot selectively reverse its direction. Here we take advantage of the built-in asymmetry at ferroelectric/electrode interfaces to break the up/down symmetry in uniaxial ferroelectrics to promote polarization reversal under illumination. It is shown that appropriate ferroelectric/metal structures allow the direction of the imprint electric field to be selected, which is instrumental for polarization reversal. This ability is further exploited by demonstrating the optical control of the resistance states in a ferroelectric capacitor.
Collapse
Affiliation(s)
- Huan Tan
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Barcelona, Spain.
| | - Gustavo Castro
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Barcelona, Spain
| | - Jike Lyu
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Barcelona, Spain.
| | - Pablo Loza-Alvarez
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Barcelona, Spain
| | - Florencio Sánchez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Barcelona, Spain.
| | - Josep Fontcuberta
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Barcelona, Spain.
| | - Ignasi Fina
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Barcelona, Spain.
| |
Collapse
|
22
|
Jiang Y, Zhang L, Wang R, Li H, Li L, Zhang S, Li X, Su J, Song X, Xia C. Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse. ACS NANO 2022; 16:11218-11226. [PMID: 35730563 DOI: 10.1021/acsnano.2c04271] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric field-effect transistors (Fe-FET) are promising candidates for future information devices. However, they suffer from low endurance and short retention time, which retards the application of processing memory in the same physical processes. Here, inspired by the ferroelectric proximity effects, we design a reconfigurable two-dimensional (2D) MoS2 transistor featuring with asymmetric ferroelectric gate, exhibiting high memory and logic ability with a program/erase ratio of over 106 and a self-rectifying ratio of 103. Interestingly, the robust electric and optic cycling are obtained with a large switching ratio of 106 and nine distinct resistance states upon optical excitation with excellent nonvolatile characteristics. Meanwhile, the operation of memory mimics the synapse behavior in response to light spikes with different intensity and number. This design realizes an integration of robust processing memory in one single device, which demonstrates a considerable potential of an asymmetric ferroelectric gate in the development of Fe-FETs for logic processing and nonvolatile memory applications.
Collapse
Affiliation(s)
- Yurong Jiang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Linlin Zhang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Rui Wang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Hongzhi Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Lin Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Suicai Zhang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Xueping Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Jian Su
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Xiaohui Song
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Congxin Xia
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| |
Collapse
|
23
|
Zhang R, Lai Y, Chen W, Teng C, Sun Y, Yang L, Wang J, Liu B, Cheng HM. Carrier Trapping in Wrinkled 2D Monolayer MoS 2 for Ultrathin Memory. ACS NANO 2022; 16:6309-6316. [PMID: 35324162 DOI: 10.1021/acsnano.2c00350] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Atomically thin two-dimensional (2D) semiconductors are promising for next-generation memory to meet the scaling down of semiconductor industry. However, the controllability of carrier trapping status, which is the key figure of merit for memory devices, still halts the application of 2D semiconductor-based memory. Here, we introduce a scheme for 2D material based memory using wrinkles in monolayer 2D semiconductors as controllable carrier trapping centers. Memory devices based on wrinkled monolayer MoS2 show multilevel storage capability, an on/off ratio of 106, and a retention time of >104 s, as well as tunable linear and exponential behaviors at the stimulation of different gate voltages. We also reveal an interesting wrinkle-based carrier trapping mechanism by using conductive atomic force microscopy. This work offers a configuration to control carriers in ultrathin memory devices and for in-memory calculations.
Collapse
Affiliation(s)
- Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yongjue Lai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Wenjun Chen
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Changjiu Teng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yujie Sun
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Liusi Yang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Jingyun Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- Faculty of Materials and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| |
Collapse
|
24
|
Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 111] [Impact Index Per Article: 55.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
Collapse
Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
| |
Collapse
|
25
|
Chen J, Guo R, Wang X, Zhu C, Cao G, You L, Duan R, Zhu C, Hadke SS, Cao X, Salim T, Buenconsejo PJS, Xu M, Zhao X, Zhou J, Deng Y, Zeng Q, Wong LH, Chen J, Liu F, Liu Z. Solid-Ionic Memory in a van der Waals Heterostructure. ACS NANO 2022; 16:221-231. [PMID: 35001610 DOI: 10.1021/acsnano.1c05841] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 106 (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 104 A/W) and photodetectivity (2.12 × 1013 Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.
Collapse
Affiliation(s)
| | - Rui Guo
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | | | | | - Guiming Cao
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Lu You
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, P. R. China
| | | | | | | | | | | | | | | | | | | | | | | | | | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zheng Liu
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| |
Collapse
|
26
|
Guan Z, Zhao Y, Wang X, Zhong N, Deng X, Zheng Y, Wang J, Xu D, Ma R, Yue F, Cheng Y, Huang R, Xiang P, Wei Z, Chu J, Duan C. Electric-Field-Induced Room-Temperature Antiferroelectric-Ferroelectric Phase Transition in van der Waals Layered GeSe. ACS NANO 2022; 16:1308-1317. [PMID: 34978807 DOI: 10.1021/acsnano.1c09183] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Searching van der Waals ferroic materials that can work under ambient conditions is of critical importance for developing ferroic devices at the two-dimensional limit. Here we report the experimental discovery of electric-field-induced reversible antiferroelectric (AFE) to ferroelectric (FE) transition at room temperature in van der Waals layered α-GeSe, employing Raman spectroscopy, transmission electron microscopy, second-harmonic generation, and piezoelectric force microscopy consolidated by first-principles calculations. An orientation-dependent AFE-FE transition provides strong evidence that the in-plane (IP) polarization vector aligns along the armchair rather than zigzag direction in α-GeSe. In addition, temperature-dependent Raman spectra showed that the IP polarization could sustain up to higher than 700 K. Our findings suggest that α-GeSe, which is also a potential ferrovalley material, could be a robust building block for creating artificial 2D multiferroics at room temperature.
Collapse
Affiliation(s)
- Zhao Guan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Yifeng Zhao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Xiaoting Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Xing Deng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Yunzhe Zheng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Jinjin Wang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Dongdong Xu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Ruru Ma
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Pinghua Xiang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| |
Collapse
|
27
|
Dai JQ, Yuan J, Ke C. Controllable band offset in monolayer MoSe2 driven by surface termination and ferroelectric field of BiFeO3(0001) substrate. J SOLID STATE CHEM 2021. [DOI: 10.1016/j.jssc.2021.122571] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
|
28
|
Yuan J, Dai JQ, Ke C. Electrostatic Modulation and Mechanism of the Electronic Properties of Monolayer MoS 2 via Ferroelectric BiAlO 3(0001) Polar Surfaces. ACS OMEGA 2021; 6:26345-26353. [PMID: 34660994 PMCID: PMC8515565 DOI: 10.1021/acsomega.1c03556] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/06/2021] [Accepted: 09/14/2021] [Indexed: 06/13/2023]
Abstract
In the present work, first-principles density functional theory calculations were carried out to explore the intrinsic interface coupling and electrostatic modulation as well as the effect of ferroelectric polarization reversal in the MoS2/BiAlO3(0001) [MoS2/BAO(0001)] hybrid system. In addition to the interaction mechanism of the large ionic-van der Waals (vdW) coupling, our results indicate that the electronic properties of monolayer MoS2 on the BAO(0001) polar surface can be effectively modulated by reversing the ferroelectric polarization and/or engineering the domain structures of the substrate. Due to the unusual charge transfer between the MoS2 overlayer and the down-polarized ferroelectric BAO(0001) substrate, in the final analysis, the physical mechanism determining the interfacial charge transfer in the MoS2/BAO(0001) hybrid system is attributed to the specific band alignment between the clean BAO(0001) surface and the freestanding monolayer MoS2. Furthermore, our study predicts that MoS2-based ferroelectric field-effect transistors and various types of seamless p-i, n-i, p-n, p+-p, and n+-n homojunctions possessing an extremely steep built-in electric field can be fabricated by reversing the ferroelectric polarization and/or patterning the domain structure of the BAO(0001) substrate.
Collapse
|
29
|
Sun Y, Niu G, Ren W, Meng X, Zhao J, Luo W, Ye ZG, Xie YH. Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection. ACS NANO 2021; 15:10982-11013. [PMID: 34184877 DOI: 10.1021/acsnano.1c01735] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Photodetectors are one of the most important components for a future "Internet-of-Things" information society. Compared to the mainstream semiconductor-based photodetectors, emerging devices based on two-dimensional (2D) materials and ferroelectrics as well as their hybrid systems have been extensively studied in recent decades due to their outstanding performances and related interesting physical, electrical, and optoelectronic phenomena. In this paper, we review the photodetection based on 2D materials and ferroelectric hybrid systems. The fundamentals of 2D and ferroelectric materials as well as the interaction in the hybrid system will be introduced. Ferroelectricity modulated optoelectronic properties in the hybrid system will be discussed in detail. After the basics and figures of merit of photodetectors are summarized, the 2D-ferroelectrics devices with different structures including p-n diodes, Schottky diodes, and field-effect transistors will be reviewed and compared. The polarization of ferroelectrics offers the possibility of the modulation and enhancement of the photodetection in the hybrid detectors, which will be discussed in depth. Finally, the challenges and perspectives of the photodetectors based on 2D ferroelectrics will be proposed. This Review outlines the important aspects of the recent development of the hybrid system of 2D and ferroelectric materials, which could interact with each other and thus lead to photodetectors with higher performances. Such a Review will be helpful for the research of emerging physical phenomena and for the design of multifunctional nanoscale electronic and optoelectronic devices.
Collapse
Affiliation(s)
- Yanxiao Sun
- Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, Shaanxi, P. R. China
| | - Gang Niu
- Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, Shaanxi, P. R. China
| | - Wei Ren
- Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, Shaanxi, P. R. China
| | - Xiangjian Meng
- National Laboratory for Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China
| | - Jinyan Zhao
- Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, Shaanxi, P. R. China
| | - Wenbo Luo
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China
| | - Zuo-Guang Ye
- Department of Chemistry and 4D Laboratories, Simon Fraser University, Burnaby V5A 1S6, British Columbia, Canada
| | - Ya-Hong Xie
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles 90024, California, United States
| |
Collapse
|
30
|
Yin L, Cheng R, Wen Y, Liu C, He J. Emerging 2D Memory Devices for In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007081. [PMID: 34105195 DOI: 10.1002/adma.202007081] [Citation(s) in RCA: 42] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2020] [Revised: 12/27/2020] [Indexed: 06/12/2023]
Abstract
It is predicted that the conventional von Neumann computing architecture cannot meet the demands of future data-intensive computing applications due to the bottleneck between the processing and memory units. To try to solve this problem, in-memory computing technology, where calculations are carried out in situ within each nonvolatile memory unit, has been intensively studied. Among various candidate materials, 2D layered materials have recently demonstrated many new features that have been uniquely exploited to build next-generation electronics. Here, the recent progress of 2D memory devices is reviewed for in-memory computing. For each memory configuration, their operation mechanisms and memory characteristics are described, and their pros and cons are weighed. Subsequently, their versatile applications for in-memory computing technology, including logic operations, electronic synapses, and random number generation are presented. Finally, the current challenges and potential strategies for future 2D in-memory computing systems are also discussed at the material, device, circuit, and architecture levels. It is hoped that this manuscript could give a comprehensive review of 2D memory devices and their applications in in-memory computing, and be helpful for this exciting research area.
Collapse
Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| |
Collapse
|
31
|
Liu X, Wang D, Kim KH, Katti K, Zheng J, Musavigharavi P, Miao J, Stach EA, Olsson RH, Jariwala D. Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory. NANO LETTERS 2021; 21:3753-3761. [PMID: 33881884 DOI: 10.1021/acs.nanolett.0c05051] [Citation(s) in RCA: 29] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Recent advances in oxide ferroelectric (FE) materials have rejuvenated the field of low-power, nonvolatile memories and made FE memories a commercial reality. Despite these advances, progress on commercial FE-RAM based on lead zirconium titanate has stalled due to process challenges. The recent discovery of ferroelectricity in scandium-doped aluminum nitride (AlScN) presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approximately 350 °C), making it compatible with back end of the line integration on silicon logic. Here, we present a FE-FET device composed of an FE-AlScN dielectric layer integrated with a two-dimensional MoS2 channel. Our devices show an ON/OFF ratio of ∼106, concurrent with a normalized memory window of 0.3 V/nm. The devices also demonstrate stable memory states up to 104 cycles and state retention up to 105 s. Our results suggest that the FE-AlScN/2D combination is ideal for embedded memory and memory-based computing architectures.
Collapse
Affiliation(s)
- Xiwen Liu
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Dixiong Wang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Kwan-Ho Kim
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Keshava Katti
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jeffrey Zheng
- Material Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Pariasadat Musavigharavi
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Material Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jinshui Miao
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Eric A Stach
- Material Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Roy H Olsson
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| |
Collapse
|
32
|
Chu J, Wang Y, Wang X, Hu K, Rao G, Gong C, Wu C, Hong H, Wang X, Liu K, Gao C, Xiong J. 2D Polarized Materials: Ferromagnetic, Ferrovalley, Ferroelectric Materials, and Related Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004469. [PMID: 33325574 DOI: 10.1002/adma.202004469] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2020] [Revised: 07/21/2020] [Indexed: 06/12/2023]
Abstract
The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices' application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.
Collapse
Affiliation(s)
- Junwei Chu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xuepeng Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Kai Hu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Gaofeng Rao
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chuanhui Gong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chunchun Wu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Hao Hong
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, China
| | - Chunlei Gao
- State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (MOE), Department of Physics, and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| |
Collapse
|
33
|
Long X, Tan H, Sánchez F, Fina I, Fontcuberta J. Non-volatile optical switch of resistance in photoferroelectric tunnel junctions. Nat Commun 2021; 12:382. [PMID: 33452259 PMCID: PMC7810721 DOI: 10.1038/s41467-020-20660-9] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/15/2020] [Accepted: 12/14/2020] [Indexed: 01/29/2023] Open
Abstract
In the quest for energy efficient and fast memory elements, optically controlled ferroelectric memories are promising candidates. Here, we show that, by taking advantage of the imprint electric field existing in the nanometric BaTiO3 films and their photovoltaic response at visible light, the polarization of suitably written domains can be reversed under illumination. We exploit this effect to trigger and measure the associate change of resistance in tunnel devices. We show that engineering the device structure by inserting an auxiliary dielectric layer, the electroresistance increases by a factor near 2 × 103%, and a robust electric and optic cycling of the device can be obtained mimicking the operation of a memory device under dual control of light and electric fields.
Collapse
Affiliation(s)
- Xiao Long
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia, Spain
| | - Huan Tan
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia, Spain
| | - Florencio Sánchez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia, Spain
| | - Ignasi Fina
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia, Spain.
| | - Josep Fontcuberta
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, 08193, Bellaterra, Catalonia, Spain.
| |
Collapse
|
34
|
Xu K, Jiang W, Gao X, Zhao Z, Low T, Zhu W. Optical control of ferroelectric switching and multifunctional devices based on van der Waals ferroelectric semiconductors. NANOSCALE 2020; 12:23488-23496. [PMID: 33211783 DOI: 10.1039/d0nr06872a] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Indium Selenide (In2Se3) is a newly emerged van der Waals (vdW) ferroelectric material, which unlike traditional insulating ferroelectric materials, is a semiconductor with a bandgap of about 1.36 eV. Ferroelectric diodes and transistors based on In2Se3 have been demonstrated. However, the interplay between light and electric polarization in In2Se3 has not been explored. In this paper, we found that the polarization in In2Se3 can be programmed by optical stimuli, due to its semiconducting nature, where the photo generated carriers in In2Se3 can alter the screening field and lead to polarization reversal. Utilizing these unique properties of In2Se3, we demonstrated a new type of multifunctional device based on 2D heterostructures, which can concurrently serve as a logic gate, photodetector, electronic memory and photonic memory. This dual electrical and optical operation of the memories can simplify the device architecture and offer additional functionalities, such as ultrafast optical erase of large memory arrays. In addition, we show that dual-gate structure can address the partial switching problem commonly observed in In2Se3 ferroelectric transistors, as the two gates can enhance the vertical electric field and facilitate the polarization switching in the semiconducting In2Se3. These discovered effects are of general nature and should be observable in any ferroelectric semiconductor. These findings deepen the understanding of polarization switching and light-polarization interaction in semiconducting ferroelectric materials and open up their applications in multifunctional electronic and photonic devices.
Collapse
Affiliation(s)
- Kai Xu
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA.
| | | | | | | | | | | |
Collapse
|
35
|
Liu X, Zhou X, Pan Y, Yang J, Xiang H, Yuan Y, Liu S, Luo H, Zhang D, Sun J. Charge-Ferroelectric Transition in Ultrathin Na 0.5 Bi 4.5 Ti 4 O 15 Flakes Probed via a Dual-Gated Full van der Waals Transistor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2004813. [PMID: 33145852 DOI: 10.1002/adma.202004813] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2020] [Revised: 09/28/2020] [Indexed: 06/11/2023]
Abstract
Ferroelectric field-effect transistors (FeFETs) have recently attracted enormous attention owing to their applications in nonvolatile memories and low-power logic electronics. However, the current mainstream thin-film-based ferroelectrics lack good compatibility with the emergent 2D van der Waals (vdW) heterostructures. In this work, the synthesis of thin ferroelectric Na0.5 Bi4.5 Ti4 O15 (NBIT) flakes by a molten-salt method is reported. With a dry-transferred NBIT flake serving as the top-gate dielectric, dual-gate molybdenum disulfide (MoS2 ) FeFETs are fabricated in a full vdW stacking structure. Barrier-free graphene contacts allow the investigation of intrinsic carrier transport of MoS2 governed by lattice scattering. Thanks to the high dielectric constant of ≈94 in NBIT, a metal to insulator transition with a high electron concentration of 3.0 × 1013 cm-2 is achieved in MoS2 under top-gate modulation. The electron field-effect mobility as high as 182 cm2 V-1 s-1 at 88 K is obtained. The as-fabricated MoS2 FeFET exhibits clockwise hysteresis transfer curves that originate from charge trapping/release with either top-gate or back-gate modulation. Interestingly, hysteresis behavior can be controlled from clockwise to counterclockwise using dual-gate. A multifunctional device utilizing this unique property of NBIT, which is switchable electrostatically between short-term memory and nonvolatile ferroelectric memory, is envisaged.
Collapse
Affiliation(s)
- Xiaochi Liu
- School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, 410083, China
| | - Xuefan Zhou
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Yuchuan Pan
- School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, 410083, China
| | - Junqiang Yang
- School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, 410083, China
| | - Haiyan Xiang
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemical/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Yahua Yuan
- School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, 410083, China
| | - Song Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemical/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Hang Luo
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Dou Zhang
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Jian Sun
- School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, 410083, China
| |
Collapse
|
36
|
Jeon H, Kim SG, Park J, Kim SH, Park E, Kim J, Yu HY. Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2004371. [PMID: 33205614 DOI: 10.1002/smll.202004371] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2020] [Revised: 10/24/2020] [Indexed: 06/11/2023]
Abstract
2D semiconductor-based ferroelectric field effect transistors (FeFETs) have been considered as a promising artificial synaptic device for implementation of neuromorphic computing systems. However, an inevitable problem, interface traps at the 2D semiconductor/ferroelectric oxide interface, suppresses ferroelectric characteristics, and causes a critical degradation on the performance of 2D-based FeFETs. Here, hysteresis modulation method using self-assembly monolayer (SAM) material for interface trap passivation on 2D-based FeFET is presented. Through effectively passivation of interface traps by SAM layer, the hysteresis of the proposed device changes from interface traps-dependent to polarization-dependent direction. The reduction of interface trap density is clearly confirmed through the result of calculation using the subthreshold swing of the device. Furthermore, excellent optic-neural synaptic characteristics are successfully implemeted, including linear and symmetric potentiation and depression, and multilevel conductance. This work identifies the potential of passivation effect for 2D-based FeFETs to accelerate the development of neuromorphic computing systems.
Collapse
Affiliation(s)
- Hyeok Jeon
- Department of Semiconductor Systems Engineering, Korea University, Seoul, 02841, South Korea
| | - Seung-Geun Kim
- Department of Semiconductor Systems Engineering, Korea University, Seoul, 02841, South Korea
| | - June Park
- Department of Nano Semiconductor Engineering, Korea University, Seoul, 02841, South Korea
| | - Seung-Hwan Kim
- Department of Electrical Engineering, Korea University, Seoul, 02841, South Korea
| | - Euyjin Park
- Department of Electrical Engineering, Korea University, Seoul, 02841, South Korea
| | - Jiyoung Kim
- Department of Material Sciences and Engineering, University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Hyun-Yong Yu
- Department of Semiconductor Systems Engineering, Korea University, Seoul, 02841, South Korea
- Department of Electrical Engineering, Korea University, Seoul, 02841, South Korea
| |
Collapse
|
37
|
Zhao Z, Xu K, Ryu H, Zhu W. Strong Temperature Effect on the Ferroelectric Properties of CuInP 2S 6 and Its Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2020; 12:51820-51826. [PMID: 33152243 DOI: 10.1021/acsami.0c13799] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Van der Waals (vdW) ferroelectric insulator CuInP2S6 (CIPS) has attracted intense research interest due to its unique ferroelectric and piezoelectric properties. In this paper, we systematically investigate the temperature and frequency dependence of the ferroelectric properties of CIPS. We find that there is a large imprint in the CIPS capacitor, which can be attributed to the fixed dipoles induced by defects. At high temperatures and low frequencies, the amplitude and direction of the imprint become tunable by the preset pulse, as the copper ions are more mobile and these dipoles become switchable. When the polarization in CIPS changes direction, the graphene/CIPS/graphene ferroelectric diode exhibits switchable resistance since the Fermi level in graphene is modulated by the polarization in CIPS. For CIPS/MoTe2 dual-gate transistor, a temperature-dependent nonvolatile memory window is observed, which can be attributed to the interplay between ferroelectric polarization and interface traps. This research provides experimental groundwork for vdW ferroelectric materials, expands the understanding of ferroelectricity in CIPS, and opens up exciting opportunities for novel electronic devices based on vdW ferroelectric materials.
Collapse
Affiliation(s)
- Zijing Zhao
- Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Kai Xu
- Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Hojoon Ryu
- Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Wenjuan Zhu
- Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| |
Collapse
|
38
|
Xu L, Duan Z, Zhang P, Wang X, Zhang J, Shang L, Jiang K, Li Y, Zhu L, Gong Y, Hu Z, Chu J. Ferroelectric-Modulated MoS 2 Field-Effect Transistors as Multilevel Nonvolatile Memory. ACS APPLIED MATERIALS & INTERFACES 2020; 12:44902-44911. [PMID: 32931241 DOI: 10.1021/acsami.0c09951] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ferroelectric field-effect transistors (FeFETs) with semiconductors as the channel material and ferroelectrics as the gate insulator are attractive and/or promising devices for application in nonvolatile memory. In FeFETs, the conductivity states of the semiconductor are utilized to explore the polarization directions of the ferroelectric material. Herein, we report FeFETs based on a few layers of MoS2 on a 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single crystal with switchable multilevel states. It was found that the On-Off ratios can reach as high as 106. We prove that the interaction effect of ferroelectric polarization and interface charge traps has a great influence on the transport behaviors and nonvolatile memory characteristics of MoS2/PMN-PT FeFETs. In order to further study the underlying physical mechanism, we have researched the time-dependent electrical properties in the temperature range from 300 to 500 K. The separation of effects from ferroelectric polarization and interfacial traps on electrical behaviors of FeFETs provides us with an opportunity to better understand the operation mechanism, which suggests a fantastic way for multilevel, low-power consumption, and high-density nonvolatile memory devices.
Collapse
Affiliation(s)
- Liping Xu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Zhihua Duan
- Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai 200234, China
| | - Peng Zhang
- School of Materials Science & Engineering, Beihang University, Beijing 100191, China
| | - Xiang Wang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Yawei Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Liangqing Zhu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Yongji Gong
- School of Materials Science & Engineering, Beihang University, Beijing 100191, China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Junhao Chu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics & Advanced Instrument (Ministry of Education), Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| |
Collapse
|
39
|
Chiang YC, Hung CC, Lin YC, Chiu YC, Isono T, Satoh T, Chen WC. High-Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod-Coil Materials as a Floating Gate. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002638. [PMID: 32700349 DOI: 10.1002/adma.202002638] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2020] [Revised: 06/07/2020] [Indexed: 06/11/2023]
Abstract
A novel approach for using conjugated rod-coil materials as a floating gate in the fabrication of nonvolatile photonic transistor memory devices, consisting of n-type Sol-PDI and p-type C10-DNTT, is presented. Sol-PDI and C10-DNTT are used as dual functions of charge-trapping (conjugated rod) and tunneling (insulating coil), while n-type BPE-PDI and p-type DNTT are employed as the corresponding transporting layers. By using the same conjugated rod in the memory layer and transporting channel with a self-assembled structure, both n-type and p-type memory devices exhibit a fast response, a high current contrast between "Photo-On" and "Electrical-Off" bistable states over 105 , and an extremely low programing driving force of 0.1 V. The fabricated photon-driven memory devices exhibit a quick response to different wavelengths of light and a broadband light response that highlight their promising potential for light-recorder and synaptic device applications.
Collapse
Affiliation(s)
- Yun-Chi Chiang
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Chih-Chien Hung
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| | - Yan-Cheng Lin
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Yu-Cheng Chiu
- Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan
| | - Takuya Isono
- Faculty of Engineering, Hokkaido University, Sapporo, 060-8628, Japan
| | - Toshifumi Satoh
- Faculty of Engineering, Hokkaido University, Sapporo, 060-8628, Japan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei, 10617, Taiwan
| |
Collapse
|
40
|
Zhang S, Liu Y, Zhou J, Ma M, Gao A, Zheng B, Li L, Su X, Han G, Zhang J, Shi Y, Wang X, Hao Y. Low Voltage Operating 2D MoS 2 Ferroelectric Memory Transistor with Hf 1-xZr xO 2 Gate Structure. NANOSCALE RESEARCH LETTERS 2020; 15:157. [PMID: 32743764 PMCID: PMC7396413 DOI: 10.1186/s11671-020-03384-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2020] [Accepted: 07/15/2020] [Indexed: 05/31/2023]
Abstract
Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here, we report a CMOS compatible FeFET cell with low operating voltage. We engineer the ferroelectric Hf1-xZrxO2 (HZO) thin film to form negative capacitance (NC) gate dielectrics, which generates a counterclock hysteresis loop of polarization domain in the few-layered molybdenum disulfide (MoS2) FeFET. The unstabilized negative capacitor inherently supports subthermionic swing rate and thus enables switching the ferroelectric polarization with the hysteresis window much less than half of the operating voltage. The FeFET shows a high on/off current ratio of more than 107 and a counterclockwise memory window (MW) of 0.1 V at a miminum program (P)/erase (E) voltage of 3 V. Robust endurance (103 cycles) and retention (104 s) properties are also demonstrated. Our results demonstrate that the HZO/MoS2 ferroelectric memory transistor can achieve new opportunities in size- and voltage-scalable non-volatile memory applications.
Collapse
Affiliation(s)
- Siqing Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Yan Liu
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, China.
| | - Jiuren Zhou
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Meng Ma
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Anyuan Gao
- School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, China
| | - Binjie Zheng
- School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, China
| | - Lingfei Li
- School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, China
| | - Xin Su
- School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, China
| | - Genquan Han
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Jincheng Zhang
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Yi Shi
- School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, China
| | - Xiaomu Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, Jiangsu, China.
| | - Yue Hao
- Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, 710071, China
| |
Collapse
|
41
|
Liang SJ, Cheng B, Cui X, Miao F. Van der Waals Heterostructures for High-Performance Device Applications: Challenges and Opportunities. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903800. [PMID: 31608514 DOI: 10.1002/adma.201903800] [Citation(s) in RCA: 117] [Impact Index Per Article: 29.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2019] [Revised: 08/22/2019] [Indexed: 06/10/2023]
Abstract
The discovery of two-dimensional (2D) materials with unique electronic, superior optoelectronic, or intrinsic magnetic order has triggered worldwide interest in the fields of material science, condensed matter physics, and device physics. Vertically stacking 2D materials with distinct electronic and optical as well as magnetic properties enables the creation of a large variety of van der Waals heterostructures. The diverse properties of the vertical heterostructures open unprecedented opportunities for various kinds of device applications, e.g., vertical field-effect transistors, ultrasensitive infrared photodetectors, spin-filtering devices, and so on, which are inaccessible in conventional material heterostructures. Here, the current status of vertical heterostructure device applications in vertical transistors, infrared photodetectors, and spintronic memory/transistors is reviewed. The relevant challenges for achieving high-performance devices are presented. An outlook into the future development of vertical heterostructure devices with integrated electronic and optoelectronic as well as spintronic functionalities is also provided.
Collapse
Affiliation(s)
- Shi-Jun Liang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Bin Cheng
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xinyi Cui
- State Key Laboratory of Pollution Control and Resource Reuse, School of the Environment, Nanjing University, Nanjing, 210046, China
| | - Feng Miao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| |
Collapse
|
42
|
Huang W, Wang F, Yin L, Cheng R, Wang Z, Sendeku MG, Wang J, Li N, Yao Y, He J. Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1908040. [PMID: 32080924 DOI: 10.1002/adma.201908040] [Citation(s) in RCA: 33] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2019] [Revised: 01/30/2020] [Indexed: 05/16/2023]
Abstract
Ferroelectric field-effect transistors (FeFETs) are one of the most interesting ferroelectric devices; however, they, usually suffer from low interface quality. The recently discovered 2D layered ferroelectric materials, combining with the advantages of van der Waals heterostructures (vdWHs), may be promising to fabricate high-quality FeFETs with atomically thin thickness. Here, dual-gated 2D ferroelectric vdWHs are constructed using MoS2 , hexagonal boron nitride (h-BN), and CuInP2 S6 (CIPS), which act as a high-performance nonvolatile memory and programmable rectifier. It is first noted that the insertion of h-BN and dual-gated coupling device configuration can significantly stabilize and effectively polarize ferroelectric CIPS. Through this design, the device shows a record-high performance with a large memory window, large on/off ratio (107 ), ultralow programming state current (10-13 A), and long-time endurance (104 s) as nonvolatile memory. As for programmable rectifier, a wide range of gate-tunable rectification behavior is observed. Moreover, the device exhibits a large rectification ratio (3 × 105 ) with stable retention under the programming state. This demonstrates the promising potential of ferroelectric vdWHs for new multifunctional ferroelectric devices.
Collapse
Affiliation(s)
- Wenhao Huang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Feng Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Lei Yin
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Ruiqing Cheng
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Zhenxing Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Marshet Getaye Sendeku
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Junjun Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Ningning Li
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Yuyu Yao
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Jun He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
- School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| |
Collapse
|
43
|
Li D, Huang X, Xiao Z, Chen H, Zhang L, Hao Y, Song J, Shao DF, Tsymbal EY, Lu Y, Hong X. Polar coupling enabled nonlinear optical filtering at MoS 2/ferroelectric heterointerfaces. Nat Commun 2020; 11:1422. [PMID: 32184400 PMCID: PMC7078226 DOI: 10.1038/s41467-020-15191-2] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2019] [Accepted: 02/14/2020] [Indexed: 11/09/2022] Open
Abstract
Complex oxide heterointerfaces and van der Waals heterostructures present two versatile but intrinsically different platforms for exploring emergent quantum phenomena and designing new functionalities. The rich opportunity offered by the synergy between these two classes of materials, however, is yet to be charted. Here, we report an unconventional nonlinear optical filtering effect resulting from the interfacial polar alignment between monolayer MoS2 and a neighboring ferroelectric oxide thin film. The second harmonic generation response at the heterointerface is either substantially enhanced or almost entirely quenched by an underlying ferroelectric domain wall depending on its chirality, and can be further tailored by the polar domains. Unlike the extensively studied coupling mechanisms driven by charge, spin, and lattice, the interfacial tailoring effect is solely mediated by the polar symmetry, as well explained via our density functional theory calculations, pointing to a new material strategy for the functional design of nanoscale reconfigurable optical applications.
Collapse
Affiliation(s)
- Dawei Li
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Xi Huang
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0511, USA
| | - Zhiyong Xiao
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Hanying Chen
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Le Zhang
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Yifei Hao
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Jingfeng Song
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Ding-Fu Shao
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA.,Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0298, USA
| | - Yongfeng Lu
- Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0511, USA. .,Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0298, USA.
| | - Xia Hong
- Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE, 68588-0299, USA. .,Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE, 68588-0298, USA.
| |
Collapse
|
44
|
Luo ZD, Xia X, Yang MM, Wilson NR, Gruverman A, Alexe M. Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors. ACS NANO 2020; 14:746-754. [PMID: 31887010 DOI: 10.1021/acsnano.9b07687] [Citation(s) in RCA: 86] [Impact Index Per Article: 21.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Neuromorphic visual sensory and memory systems, which can perceive, process, and memorize optical information, represent core technology for artificial intelligence and robotics with autonomous navigation. An optoelectronic synapse with an elegant integration of biometric optical sensing and synaptic learning functions can be a fundamental element for the hardware-implementation of such systems. Here, we report a class of ferroelectric field-effect memristive transistors made of a two-dimensional WS2 semiconductor atop a ferroelectric PbZr0.2Ti0.8O3 (PZT) thin film for optoelectronic synaptic devices. The WS2 channel exhibits voltage- and light-controllable memristive switching, dependent on the optically and electrically tunable ferroelectric domain patterns in the underlying PZT layer. These devices consequently show the emulation of optically driven synaptic functionalities including both short- and long-term plasticity as well as the implementation of brainlike learning rules. Integration of these rich synaptic functionalities into one single artificial optoelectronic device could allow the development of future neuromorphic electronics capable of optical information sensing and learning.
Collapse
Affiliation(s)
- Zheng-Dong Luo
- Department of Physics , The University of Warwick , Coventry CV4 7AL , United Kingdom
| | - Xue Xia
- Department of Physics , The University of Warwick , Coventry CV4 7AL , United Kingdom
| | - Ming-Min Yang
- Department of Physics , The University of Warwick , Coventry CV4 7AL , United Kingdom
| | - Neil R Wilson
- Department of Physics , The University of Warwick , Coventry CV4 7AL , United Kingdom
| | - Alexei Gruverman
- Department of Physics and Astronomy , University of Nebraska , Lincoln , Nebraska 68588 , United States
| | - Marin Alexe
- Department of Physics , The University of Warwick , Coventry CV4 7AL , United Kingdom
| |
Collapse
|
45
|
Apostol NG, Lizzit D, Lungu GA, Lacovig P, Chirilă CF, Pintilie L, Lizzit S, Teodorescu CM. Resistance hysteresis correlated with synchrotron radiation surface studies in atomic sp2 layers of carbon synthesized on ferroelectric (001) lead zirconate titanate in an ultrahigh vacuum. RSC Adv 2020; 10:1522-1534. [PMID: 35494695 PMCID: PMC9047335 DOI: 10.1039/c9ra09131a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/04/2019] [Accepted: 12/31/2019] [Indexed: 12/29/2022] Open
Abstract
Graphene-like layers synthesized in ultrahigh vacuum, characterized by surface science techniques, exhibit resistance hysteresis depending on the carbon coverage.
Collapse
|
46
|
Zhou F, Chen J, Tao X, Wang X, Chai Y. 2D Materials Based Optoelectronic Memory: Convergence of Electronic Memory and Optical Sensor. RESEARCH 2019; 2019:9490413. [PMID: 31549096 PMCID: PMC6750115 DOI: 10.34133/2019/9490413] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2019] [Accepted: 07/14/2019] [Indexed: 11/06/2022]
Abstract
The continuous development of electron devices towards the trend of "More than Moore" requires functional diversification that can collect data (sensors) and store (memories) and process (computing units) information. Considering the large occupation proportion of image data in both data center and edge devices, a device integration with optical sensing and data storage and processing is highly demanded for future energy-efficient and miniaturized electronic system. Two-dimensional (2D) materials and their heterostructures have exhibited broadband photoresponse and high photoresponsivity in the configuration of optical sensors and showed fast switching speed, multi-bit data storage, and large ON/OFF ratio in memory devices. In addition, its ultrathin body thickness and transfer process at low temperature allow 2D materials to be heterogeneously integrated with other existing materials system. In this paper, we overview the state-of-the-art optoelectronic random-access memories (ORAMs) based on 2D materials, as well as ORAM synaptic devices and their applications in neural network and image processing. The ORAM devices potentially enable direct storage/processing of sensory data from external environment. We also provide perspectives on possible directions of other neuromorphic sensor design (e.g., auditory and olfactory) based on 2D materials towards the future smart electronic systems for artificial intelligence.
Collapse
Affiliation(s)
- Feichi Zhou
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong
| | - Jiewei Chen
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong
| | - Xiaoming Tao
- Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong
| | - Xinran Wang
- School of Electronic Science and Engineering, Nanjing University, Nanjing, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong
| |
Collapse
|
47
|
Kang KT, Park J, Suh D, Choi WS. Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1803732. [PMID: 30589101 DOI: 10.1002/adma.201803732] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2018] [Revised: 09/18/2018] [Indexed: 05/28/2023]
Abstract
The marriage between a 2D layered material (2DLM) and a complex transition metal oxide (TMO) results in a variety of physical and chemical phenomena that cannot be achieved in either material alone. Interesting recent discoveries in systems such as graphene/SrTiO3 , graphene/LaAlO3 /SrTiO3 , graphene/ferroelectric oxide, MoS2 /SrTiO3 , and FeSe/SrTiO3 heterostructures include voltage scaling in field-effect transistors, charge state coupling across an interface, quantum conductance probing of the electrochemical activity, novel memory functions based on charge traps, and greatly enhanced superconductivity. In this context, various properties and functionalities appearing in numerous different 2DLM/TMO heterostructure systems are reviewed. The results imply that the multidimensional heterostructure approach based on the disparate material systems leads to an entirely new platform for the study of condensed matter physics and materials science. The heterostructures are also highly relevant technologically as each constituent material is a promising candidate for next-generation optoelectronic devices.
Collapse
Affiliation(s)
- Kyeong Tae Kang
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Korea
| | - Jeongmin Park
- Department of Energy Sciences, Sungkyunkwan University, Suwon, 16419, Korea
| | - Dongseok Suh
- Department of Energy Sciences, Sungkyunkwan University, Suwon, 16419, Korea
| | - Woo Seok Choi
- Department of Physics, Sungkyunkwan University, Suwon, 16419, Korea
| |
Collapse
|
48
|
Lv L, Zhuge F, Xie F, Xiong X, Zhang Q, Zhang N, Huang Y, Zhai T. Reconfigurable two-dimensional optoelectronic devices enabled by local ferroelectric polarization. Nat Commun 2019; 10:3331. [PMID: 31350401 PMCID: PMC6659647 DOI: 10.1038/s41467-019-11328-0] [Citation(s) in RCA: 70] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2018] [Accepted: 07/02/2019] [Indexed: 11/09/2022] Open
Abstract
Ferroelectric engineered pn doping in two-dimensional (2D) semiconductors hold essential promise in realizing customized functional devices in a reconfigurable manner. Here, we report the successful pn doping in molybdenum disulfide (MoS2) optoelectronic device by local patterned ferroelectric polarization, and its configuration into lateral diode and npn bipolar phototransistors for photodetection from such a versatile playground. The lateral pn diode formed in this way manifests efficient self-powered detection by separating ~12% photo-generated electrons and holes. When polarized as bipolar phototransistor, the device is customized with a gain ~1000 by its transistor action, reaching the responsivity ~12 A W-1 and detectivity over 1013 Jones while keeping a fast response speed within 20 μs. A promising pathway toward high performance optoelectronics is thus opened up based on local ferroelectric polarization coupled 2D semiconductors.
Collapse
Affiliation(s)
- Liang Lv
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Fuwei Zhuge
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China.
| | - Fengjun Xie
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Xujing Xiong
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Qingfu Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Nan Zhang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Yu Huang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, 430074, Wuhan, People's Republic of China.
| |
Collapse
|
49
|
Ma R, Zhang H, Yoo Y, Degregorio ZP, Jin L, Golani P, Ghasemi Azadani J, Low T, Johns JE, Bendersky LA, Davydov AV, Koester SJ. MoTe 2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering. ACS NANO 2019; 13:8035-8046. [PMID: 31247141 DOI: 10.1021/acsnano.9b02785] [Citation(s) in RCA: 38] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
The coexistence of metallic and semiconducting polymorphs in transition-metal dichalcogenides (TMDCs) can be utilized to solve the large contact resistance issue in TMDC-based field effect transistors (FETs). A semiconducting hexagonal (2H) molybdenum ditelluride (MoTe2) phase, metallic monoclinic (1T') MoTe2 phase, and their lateral homojunctions can be selectively synthesized in situ by chemical vapor deposition due to the small free energy difference between the two phases. Here, we have investigated, in detail, the structural and electrical properties of in situ-grown lateral 2H/1T' MoTe2 homojunctions grown using flux-controlled phase engineering. Using atomic-resolution plan-view and cross-sectional transmission electron microscopy analyses, we show that the round regions of near-single-crystalline 2H-MoTe2 grow out of a polycrystalline 1T'-MoTe2 matrix. We further demonstrate the operation of MoTe2 FETs made on these in situ-grown lateral homojunctions with 1T' contacts. The use of a 1T' phase as electrodes in MoTe2 FETs effectively improves the device performance by substantially decreasing the contact resistance. The contact resistance of 1T' electrodes extracted from transfer length method measurements is 470 ± 30 Ω·μm. Temperature- and gate-voltage-dependent transport characteristics reveal a flat-band barrier height of ∼30 ± 10 meV at the lateral 2H/1T' interface that is several times smaller and shows a stronger gate modulation, compared to the metal/2H Schottky barrier height. The information learned from this analysis will be critical to understanding the properties of MoTe2 homojunction FETs for use in memory and logic circuity applications.
Collapse
Affiliation(s)
- Rui Ma
- Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Huairuo Zhang
- Theiss Research, Inc. , La Jolla , California 92037 , United States
- Materials Science and Engineering Division , National Institute of Standards and Technology (NIST) , Gaithersburg , Maryland 20899 , United States
| | - Youngdong Yoo
- Department of Chemistry , Ajou University , Suwon 16499 , Korea
| | | | - Lun Jin
- Department of Chemistry , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Prafful Golani
- Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Javad Ghasemi Azadani
- Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Tony Low
- Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - James E Johns
- Department of Chemistry , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| | - Leonid A Bendersky
- Materials Science and Engineering Division , National Institute of Standards and Technology (NIST) , Gaithersburg , Maryland 20899 , United States
| | - Albert V Davydov
- Materials Science and Engineering Division , National Institute of Standards and Technology (NIST) , Gaithersburg , Maryland 20899 , United States
| | - Steven J Koester
- Department of Electrical and Computer Engineering , University of Minnesota , Minneapolis , Minnesota 55455 , United States
| |
Collapse
|
50
|
Lipatov A, Li T, Vorobeva NS, Sinitskii A, Gruverman A. Nanodomain Engineering for Programmable Ferroelectric Devices. NANO LETTERS 2019; 19:3194-3198. [PMID: 30943040 DOI: 10.1021/acs.nanolett.9b00673] [Citation(s) in RCA: 26] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We introduce a concept of programmable ferroelectric devices composed of two-dimensional (2D) and ferroelectric (FE) materials. It enables precise modulation of the in-plane conductivity of a 2D channel material through nanoengineering FE domains with out-of-plane polarization. The functionality of these new devices has been demonstrated using field-effect transistors (FETs) fabricated with monolayer molybdenum disulfide (MoS2) channels on the Pb(Zr,Ti)O3 substrates. Using piezoresponse force microscopy (PFM), we show that local switching of FE polarization by a conductive probe can be used to tune the conductivity of the MoS2 channel. Specifically, patterning of the nanoscale domains with downward polarization creates conductive paths in a resistive MoS2 channel so that the conductivity of an FET is determined by the number and length of the paths connecting source and drain electrodes. In addition to the device programmability, we demonstrate the device ON/OFF cyclic endurance by successive writing and erasing of conductive paths in a MoS2 channel. These findings may inspire the development of advanced energy-efficient programmable synaptic devices based on a combination of 2D and FE materials.
Collapse
Affiliation(s)
- Alexey Lipatov
- Department of Chemistry , University of Nebraska , Lincoln , Nebraska 68588 , United States
| | - Tao Li
- Department of Physics and Astronomy , University of Nebraska , Lincoln , Nebraska 68588 , United States
- Centre for Spintronics and Quantum System, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering , Xi'an Jiaotong University , Xi'an , Shaanxi 710049 , People's Republic of China
| | - Nataliia S Vorobeva
- Department of Chemistry , University of Nebraska , Lincoln , Nebraska 68588 , United States
| | - Alexander Sinitskii
- Department of Chemistry , University of Nebraska , Lincoln , Nebraska 68588 , United States
- Nebraska Center for Materials and Nanoscience , University of Nebraska , Lincoln , Nebraska 68588 , United States
| | - Alexei Gruverman
- Department of Physics and Astronomy , University of Nebraska , Lincoln , Nebraska 68588 , United States
- Nebraska Center for Materials and Nanoscience , University of Nebraska , Lincoln , Nebraska 68588 , United States
| |
Collapse
|