Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions

Ternary Bi2WO6/TiO2-Pt Heterojunction Sonosensitizers for Boosting Sonodynamic Therapy

Engineering Z-scheme heterojunctions represents a promising strategy for optimizing the separation and migration of charge carriers in semiconductor sonosensitizers for enhanced reactive oxygen species (ROS) generation. Nevertheless, establishing a continuous and directional pathway for ultrasonic-induced charge flow in Z-scheme heterojunctions remains a significant challenge. In this study, we present a ternary Bi2WO6/TiO2-Pt heterojunction sonosensitizer achieved through the precise growth of Pt nanocrystals on a directionally assembled Bi2WO6/TiO2 Z-scheme structure. The construction of the Bi2WO6/TiO2-Pt heterojunction involves directional growth of Bi2WO6 in situ on the highly exposed (001) crystal facet of TiO2 nanosheets, followed by the precise deposition of nano Pt on the edge (101) crystal facet. The Z-scheme Bi2WO6/TiO2 in the ternary heterojunction ensures effective electron separation, while the Schottky TiO2-Pt interface establishes a well-defined charge flow path and robust redox capabilities. Moreover, nano Pt confers the Bi2WO6/TiO2-Pt heterojunction with excellent peroxidase-mimic and catalase-mimic activities, facilitating interactions with endogenous H2O2 to produce the hydroxyl radicals and O2. It effectively alleviates tumor hypoxia and enhances ROS production. This results in significantly higher efficiency in sonodynamically induced ROS generation compared to pure TiO2 or binary Bi2WO6/TiO2 heterojunctions, as confirmed by DFT theoretical calculation and experiments with both in vitro and in vivo anticancer performance. This study offers valuable insights for designing high-performance Z-scheme sonosensitizer systems.

Construction of an Ohmic Contact Cathode by Two Metal Sulfides for efficient Capture and Catalysis of Polysulfide

The slow reaction kinetics and severe shuttle effect of lithium polysulfide make Li-S battery electrochemical performance difficult to meet the demands of large electronic devices such as electric vehicles. Based on this, an electrocatalyst constructed by metal phase material (MoS2) and semiconductor phase material (SnS2) with ohmic contact is designed for inhibiting the dissolution of lithium polysulfide with improving the reaction kinetics. According to the density-functional theory calculations, it is found that the heterostructured samples with ohmic contacts can effectively reduce the reaction-free energy of lithium polysulfide to accelerate the sulfur redox reaction, in addition to the excellent electron conduction to reduce the overall activation energy. The metallic sulfide can add more sulfophilic sites to promote the capture of polysulfide. Thanks to the ohmic contact design, the carbon nanotube-MoS2-SnS2 achieved a specific capacity of 1437.2 mAh g-1 at 0.1 C current density and 805.5 mAh g-1 after 500 cycles at 1 C current density and is also tested as a pouch cell, which proves to be valuable for practical applications. This work provides a new idea for designing an advanced and efficient polysulfide catalyst based on ohmic contact.

Van der Waals Schottky Junction Photodetector with Ultrahigh Rectifying Ratio and Switchable Photocurrent Generation

Metal-semiconductor junctions play an important role in the development of electronic and optoelectronic devices. A Schottky junction photodetector based on two-dimensional (2D) materials is promising for self-powered photodetection with fast response speed and large signal-to-noise ratio. However, it usually suffers from an uncontrolled Schottky barrier due to the Fermi level pinning effect arising from the interface states. In this work, all-2D Schottky junctions with near-ideal Fermi level depinning are realized, attributed to the high-quality interface between 2D semimetals and semiconductors. We further demonstrate asymmetric diodes based on multilayer graphene/MoS2/PtSe2 with a current rectification ratio exceeding 105 and an ideality factor of 1.2. Scanning photocurrent mapping shows that the photocurrent generation mechanism in the heterostructure switches from photovoltaic effect to photogating effect at varying drain biases, indicating both energy conversion and optical sensing are realized in a single device. In the photovoltaic mode, the photodetector is self-powered with a response time smaller than 100 μs under the illumination of a 405 nm laser. In the photogating mode, the photodetector exhibits a high responsivity up to 460 A/W originating from a high photogain. Finally, the photodetector is employed for single-pixel imaging, demonstrating its high-contrast photodetection ability. This work provides insight into the development of high-performance self-powered photodetectors based on 2D Schottky junctions.

Area-Controlled Soft Contact Probe: Non-Destructive Robust Electrical Contact with 2D and Fragile Materials

We developed a soft contact probe capable of making electrical contact with a specimen without causing damage. This probe is now commercially available. However, the contact area with the probe changes according to the pressure applied during electric contact, potentially affecting electric measurements when current density or electric field strength is critical. To address this, we developed methods to control the area of electric contact. This article reports on these methods, as well as variations in probe size, pressure for electric contact, probe materials, and attachment to commercial probers.

Dynamically Reconfigurable on-Chip Polarimeters Based on Nanoantenna Enabled Polarization Dependent Optoelectronic Computing

On-chip polarization detectors have attracted extensive research interest due to their filterless and ultracompact architecture. However, their polarization-dependent photoresponses cannot be dynamically adjusted, hindering the development toward intelligence. Here, we propose dynamically reconfigurable polarimetry based on in-sensor differentiation of two self-powered photoresponses with orthogonal polarization dependences and tunable responsivities. Such a device can be electrostatically configured in an ultrahigh polarization extinction ratio (PER) mode, where the PER tends to infinity, a Stokes parameter direct sensing mode, where the photoresponse is proportional to S1 or S2 with high accuracy (RMSES1 = 1.5%, RMSES2 = 2.0%), or a background suppressing mode, where the target-background polarization contrast is singularly enhanced. Moreover, the device achieves a polarization angle sensitivity of 0.51 mA·W-1·degree-1 and a specific polarization angle detectivity of 2.8 × 105 cm·Hz1/2·W·degree-1. This scheme is demonstrated throughout the near-to-long-wavelength infrared range, and it will bring a leap for next-generation on-chip polarimeters.

Polarization-Resolved Position-Sensitive Self-Powered Binary Photodetection in Multilayer Janus CrSBr

Recent progress in polarization-resolved photodetection based on low-symmetry 2D materials has formed the basis of cutting-edge optoelectronic devices, including quantum optical communication, 3D image processing, and sensing applications. Here, we report an optical polarization-resolving photodetector (PD) fabricated from multilayer semiconducting CrSBr single crystals with high structural anisotropy. We have demonstrated self-powered photodetection due to the formation of Schottky junctions at the Au-CrSBr interfaces, which also caused the photocurrent to display a position-sensitive and binary nature. The self-biased CrSBr PD showed a photoresponsivity of ∼0.26 mA/W with a detectivity of 3.4 × 108 Jones at 514 nm excitation of fluency (0.42 mW/cm2) under ambient conditions. The optical polarization-induced photoresponse exhibits a large dichroic ratio of 3.4, while the polarization is set along the a- and the b-axes of single-crystalline CrSBr. The PD also showed excellent stability, retaining >95% of the initial photoresponsivity in ambient conditions for more than five months without encapsulation. Thus, we demonstrate CrSBr as a fascinating material for ultralow-powered optical polarization-resolving optoelectronic devices for cutting-edge technology.

Graphene-based chemiresistive gas sensors

Gas sensors allow the monitoring of the chemical environment of humans, which is often crucial for their wellbeing or even survival. Miniaturization, reversibility, and selectivity are some of the key challenges for serial use of chemical sensors. This tutorial review describes critical aspects when using nanomaterials as sensing substrates for the application in chemiresistive gas sensors. Graphene has been shown to be a promising candidate, as it allows gas sensors to be operated at room temperature, possibly saving large amounts of energy. In this review, an overview is given on the general mechanisms for gas-sensitive semiconducting materials and the implications of doping and functionalization on the sensing parameters of chemiresistive devices. It shows in detail how different challenges, like sensitivity, response time, reversibility and selectivity have been approached by material development and operation modes. In addition, perspectives from the area of data analysis and intelligent algorithms are presented, which can further enhance these sensors' usability in the field.

Polymer Photocatalysts Containing Segregated π-Conjugation Units with Electron-Trap Activity for Efficient Natural-light-driven Bacterial Inactivation

Development of highly efficient and metal-free photocatalysts for bacterial inactivation under natural light is a major challenge in photocatalytic antibiosis. Herein, we developed an acidizing solvent-thermal approach for inserting a non-conjugated ethylenediamine segment into the conjugated planes of 3,4,9,10-perylene tetracarboxylic anhydride to generate a photocatalyst containing segregated π-conjugation units (EDA-PTCDA). Under natural light, EDA-PTCDA achieved 99.9 % inactivation of Escherichia coli and Staphylococcus aureus (60 and 45 min), which is the highest efficiency among all the natural light antibacterial reports. The difference in the surface potential and excited charge density corroborated the possibility of a built-in electron-trap effect of the non-conjugated segments of EDA-PTCDA, thus forming a highly active EDA-PTDA/bacteria interface. In addition, EDA-PTCDA exhibited negligible toxicity and damage to normal tissue cells. This catalyst provides a new opportunity for photocatalytic antibiosis under natural light conditions.

High-Throughput Computational Screening of All-MXene Metal-Semiconductor Junctions for Schottky-Barrier-Free Contacts with Weak Fermi-Level Pinning

Van der Waals (vdW) metal-semiconductor junctions (MSJs) exhibit huge potential to reduce the contact resistance and suppress the Fermi-level pinning (FLP) for improving the device performance, but they are limited by optional (2D) metals with a wide range of work functions. Here a new class of vdW MSJs entirely composed of atomically thin MXenes is reported. Using high-throughput first-principles calculations, highly stable 80 metals and 13 semiconductors are screened from 2256 MXene structures. The selected MXenes cover a broad range of work functions (1.8-7.4 eV) and bandgaps (0.8-3 eV), providing a versatile material platform for constructing all-MXene vdW MSJs. The contact type of 1040 all-MXene vdW MSJs based on Schottky barrier heights (SBHs) is identified. Unlike conventional 2D vdW MSJs, the formation of all-MXene vdW MSJs leads to interfacial polarization, which is responsible for the FLP and deviation of SBHs from the prediction of Schottky-Mott rule. Based on a set of screening criteria, six Schottky-barrier-free MSJs with weak FLP and high carrier tunneling probability (>50%) are identified. This work offers a new way to realize vdW contacts for the development of high-performance electronic and optoelectronic devices.

Pyro-Phototronic Effect-Enhanced Photocurrent of a Self-Powered Photodetector Based on ZnO Nanofiber Arrays/BaTiO3 Films

Self-powered photodetectors (PD) based on ferroelectric materials have gained huge attention because of the spontaneous polarization and unique photovoltaic effect. However, the low photocurrent values and switch ratio of the ferroelectric materials limit their further practical applications in a wide temperature range. In this study, the self-powered ZnO nanofiber array/BaTiO3 (ZnO-NFA/BTO) PD was fabricated by high-ordered ZnO-NFA via electrospinning method deposited on a 300 nm BTO film synthesized using sol-gel method. The electrospinning can prepare ZnO-NFAs with a controllable diameter (100 nm) and orientation and is directly deposited on the quartz at a large scale, which simplifies the fabrication process. This device possesses a greater on/off ratio of 2357 at zero bias than that of BTO PD (3.33) and the ZnO-NFA PD (125) at 0.2 V. The highest responsivity and specific detectivity are 1.41 mA W-1 and 1.48 × 109 Jones at 368 nm under 0 V bias, respectively, which is enhanced about three magnitudes than the pristine BTO PD (1.21 μA W-1 and 1.02 × 109 Jones). The photocurrent of the ZnO-NFA/BTO PD strongly depends on the temperature. After the cooling system and prepolarization processing are both introduced, the largest light current (475 nA) and photovoltaic plateaus (585 nA) are enhanced by about 4417 and 4278% under 368 nm at a power intensity of 4.46 mW cm-2 at 0 °C, respectively. The enhancement of photocurrent is associated with a ferro-pyro-phototronic effect, evidenced by enhanced ferroelectric polarization. The ZnO-NFA/BTO PD can detect weak signals at low power intensity with a wide temperature range of 0-100 °C under 0 V bias. The self-powered ZnO-NFA/BTO PD provides a new and promising way to fabricate high-performance and low-cost photodetectors from inorganic perovskite materials.

Schottky Junction Nanozyme Based on Mn-Bridged Co-Phthalocyanines and Ti3C2Tx Nanosheets Boosts Integrative Type I and II Photosensitization for Multimodal Cancer Therapy

Cancer phototheranostics have the potential for significantly improving the therapeutic effectiveness, as it can accurately diagnose and treat cancer. However, the current phototheranostic platforms leave much to be desired and are often limited by tumor hypoxia. Herein, a Schottky junction nanozyme has been established between a manganese-bridged cobalt-phthalocyanines complex and Ti₃C₂T_x MXene nanosheets (CoPc-Mn/Ti₃C₂T_x), which can serve as an integrative type I and II photosensitizer for enhancing cancer therapeutic efficacy via a photoacoustic imaging-guided multimodal chemodynamic/photothermal/photodynamic therapy strategy under near-infrared (808 nm) light irradiation. The Schottky junction not only possessed a narrow-bandgap, enhanced electron-hole separation ability and exhibited a potent redox potential but also enabled improved H₂O₂ and O₂ supplying performances in vitro. Accordingly, the AS1411 aptamer-immobilized CoPc-Mn/Ti₃C₂T_x nanozyme illustrated high accuracy and excellent anticancer efficiency through a multimodal therapy strategy in in vitro and in vivo experiments. This work presents a valuable method for designing and constructing a multifunctional nanocatalytic medicine platform for synergistic cancer therapy of solid tumors.

Integration of Self-Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices

With the rapid development of two-dimensional semiconductor technology, the inevitable chemical disorder at a typical metal-semiconductor interface has become an increasingly serious problem that degrades the performance of 2D semiconductor optoelectronic devices. Herein, defect-free van der Waals contacts have been achieved by utilizing topological Bi₂ Se₃ as the electrodes. Such clean and atomically sharp contacts avoid the consumption of photogenerated carriers at the interface, enabling a markedly boosted sensitivity as compared to counterpart devices with directly deposited metal electrodes. Typically, the device with 2D WSe₂ channel realizes a high responsivity of 20.5 A W^-1 , an excellent detectivity of 2.18 × 10¹²  Jones, and a fast rise/decay time of 41.66/38.81 ms. Furthermore, high-resolution visible-light imaging capability of the WSe₂ device is demonstrated, indicating its promising application prospect in future optoelectronic systems. More inspiringly, the topological electrodes are universally applicable to other 2D semiconductor channels, including WS₂ and InSe, suggesting its broad applicability. These results open fascinating opportunities for the development of high-performance electronics and optoelectronics.

Ohmic contacts of the two-dimensional Ca2N/MoS2 donor-acceptor heterostructure

In the current stage, conventional silicon-based devices are suffering from the scaling limits and the Fermi level pinning effect. Therefore, looking for low-resistance metal contacts for semiconductors has become one of the most important topics, and two-dimensional (2D) metal/semiconductor contacts turn out to be highly interesting. Alternatively, the Schottky barrier and the tunneling barrier impede their practical applications. In this work, we propose a new strategy for reducing the contact potential barrier by constructing a donor-acceptor heterostructure, that is, Ca₂N/MoS₂ with Ca₂N being a 2D electrene material with a significantly small work function and a rather high carrier concentration. The quasi-bond interaction of the heterostructure avoids the formation of a Fermi level pinning effect and gives rise to high tunneling probability. An excellent n-type Ohmic contact form between Ca₂N and MoS₂ monolayers, with a 100% tunneling probability and a perfect linear I-V curve, and large lateral band bending also demonstrates the good performance of the contact. We verify a fascinating phenomenon that Ca₂N can trigger the phase transition of MoS₂ from 2H to 1T'. In addition, we also identify that Ohmic contacts can be formed between Ca₂N and other 2D transition metal dichalcogenides (TMDCs), including WS₂, MoSe₂, WSe₂, and MoTe₂.

High Performance Graphene-C60 -Bismuth Telluride-C60 -Graphene Nanometer Thin Film Phototransistor with Adjustable Positive and Negative Responses

Graphene is a promising candidate for the next-generation infrared array image sensors at room temperature due to its high mobility, tunable energy band, wide band absorption, and compatibility with complementary metal oxide semiconductor process. However, it is difficult to simultaneously obtain ultrafast response time and ultrahigh responsivity, which limits the further improvement of graphene photoconductive devices. Here, a novel graphene/C₆₀ /bismuth telluride/C₆₀ /graphene vertical heterojunction phototransistor is proposed. The response spectral range covers 400-1800 nm; the responsivity peak is 10⁶ A W^-1 ; and the peak detection rate and peak response speed reach 10¹⁴ Jones and 250 µs, respectively. In addition, the regulation of positive and negative photocurrents at a gate voltage is characterized and the ionization process in impurities of the designed phototransistor at a low temperature is analyzed. Tunable bidirectional response provides a new degree of freedom for phototransistors' signal resolution. The analysis of the dynamic change process of impurity energy level is conducted to improve the device's performance. From the perspective of manufacturing process, the ultrathin phototransistor (20-30 nm) is compatible with functional metasurface to realize wavelength or polarization selection, making it possible to achieve large-scale production of integrated spectrometer or polarization imaging sensor by nanoimprinting process.

Electron Delocalization of Au Nanoclusters Triggered by Fe Single Atoms Boosts Alkaline Overall Water Splitting

The rational design and in-depth understanding of the structure-activity relationship (SAR) of hydrogen and oxygen evolution reaction (HER and OER) bifunctional electrocatalysts are vital to decreasing the energy consumption of hydrogen production by electrochemical water splitting. Herein, we report an inducing electron delocalization method where Fe single atoms as inducers are used to regulate the electron structure of Au nanoclusters by the M-N_x-C substrate to acquire satisfactory intrinsic HER activity. Meanwhile, Fe single atoms also serve as efficient OER active sites to construct bifunctional electrocatalysts. On account of the strong synergistic effect between Au nanoclusters and Fe single atoms, the hybrid catalyst Au-Fe₁NC/NF performs an outstanding alkaline HER and OER activity. Only 35.6 mV, 246 mV, and 1.52 V are needed to reach 10 mA cm^-2 for alkaline HER, OER, and two-electrode electrolytic cells, respectively. In addition, the bifunctional electrocatalysts also display excellent electrochemical stability. DFT calculations demonstrate that the strong synergistic effect can enhance the O-H bond activation ability of Au nanoclusters and upshift the d-band center of the Fe single atom to promote alkaline electrocatalytic water splitting. The strong synergistic effect is proven to arise from the electron delocalization of Au nanoclusters triggered by Fe single atoms.

BiOCl Heterojunction photocatalyst: Construction, photocatalytic performance, and applications

BiOCl semiconductors have attracted extensive amounts of attention and have substantial potential in alleviating energy shortages, improving sterilization performance, and solving environmental issues. To improve the optical quantum efficiency of layered BiOCl, the lifetimes of photogenerated electron-hole pairs, and BiOCl reduction capacity. During the past decade, researchers have designed many effective methods to weaken the effects of these limitations, and heterojunction construction is regarded as one of the most promising strategies. In this paper, BiOCl heterojunction photocatalysts designed and synthesized by various research groups in recent years were reviewed, and their photocatalytic properties were tested. Among them, direct Z-scheme and S-scheme photocatalysts have high redox potentials and intense redox capabilities. Hence, they exhibit excellent photocatalytic activity. Furthermore, the applications of BiOCl heterojunctions for pollutant degradation, CO₂ reduction, water splitting, N₂ fixation, organic synthesis, and tumor ablation are also reviewed. Finally, we summarize research on the BiOCl heterojunctions and put forth new insights on overcoming their present limitations.

Two-dimensional MX2Y4 systems: ultrahigh carrier transport and excellent hydrogen evolution reaction performances

Very recently, two-dimensional MoSi₂N₄ has been synthetized (Y.-L. Hong, Z. Liu, L. Wang, T. Zhou, W. Ma, C. Xu, S. Feng, L. Chen, M.-L. Chen and D.-M. Sun, Chemical vapor deposition of layered two-dimensional MoSi₂N₄ materials, Science, 2020, 369, 670-674.). In this work, we systematically explore the mechanical, electronic, and catalytic properties of the MX₂Y₄ (M = Cr, Hf, Mo, Ti, W, Zr; X = Si, Ge; Y = N, P, As) monolayers by first-principles calculations. These observed monolayers exhibit an isotropic Young's moduli of 165-514 N m^-1 and a Poisson's ratio of 0.26-0.33. The calculated band structures indicate that their bandgaps are in the range of 0.49-2.05 eV at the HSE06 level. In particular, a high electron mobility of about 1.04 × 10⁴ cm² V^-1 s^-1 is observed in TiSi₂N₄ monolayers, which shows potential for high-speed electronic devices. MX₂Y₄ monolayers also reveal decent performances in the hydrogen evolution reaction. More importantly, the Gibbs free energy change of the TiSi₂N₄ (ZrSi₂N₄) monolayer is as small as 0.078 eV (-0.035 eV), even being comparable with that of Pt (-0.09 eV). This investigation suggests that the MoSi₂N₄ family monolayers have potential advanced applications such as photocatalytic, electrocatalytic, and photovoltaic devices.

High-Performance Solution-Processed 2D P-Type WSe2 Transistors and Circuits through Molecular Doping

Semiconducting ink based on 2D single-crystal flakes with dangling-bond-free surfaces enables the implementation of high-performance devices on form-free substrates by cost-effective and scalable printing processes. However, the lack of solution-processed p-type 2D semiconducting inks with high mobility is an obstacle to the development of complementary integrated circuits. Here, a versatile strategy of doping with Br₂ is reported to enhance the hole mobility by orders of magnitude for p-type transistors with 2D layered materials. Br₂ -doped WSe₂ transistors show a field-effect hole mobility of more than 27 cm²  V^-1  s^-1 , and a high on/off current ratio of ≈10⁷ , and exhibits excellent operational stability during the on-off switching, cycling, and bias stressing testing. Moreover, complementary inverters composed of patterned p-type WSe₂ and n-type MoS₂ layered films are demonstrated with an ultra-high gain of 1280 under a driving voltage (V_DD ) of 7 V. This work unveils the high potential of solution-processed 2D semiconductors with low-temperature processability for flexible devices and monolithic circuitry.

2D-materials-integrated optoelectromechanics: recent progress and future perspectives

The discovery of two-dimensional (2D) materials has gained worldwide attention owing to their extraordinary optical, electrical, and mechanical properties. Due to their atomic layer thicknesses, the emerging 2D materials have great advantages of enhanced interaction strength, broad operating bandwidth, and ultralow power consumption for optoelectromechanical coupling. The van der Waals (vdW) epitaxy or multidimensional integration of 2D material family provides a promising platform for on-chip advanced nano-optoelectromechanical systems (NOEMS). Here, we provide a comprehensive review on the nanomechanical properties of 2D materials and the recent advances of 2D-materials-integrated nano-electromechanical systems and nano-optomechanical systems. By utilizing active nanophotonics and optoelectronics as the interface, 2D active NOEMS and their coupling effects are particularly highlighted at the 2D atomic scale. Finally, we share our viewpoints on the future perspectives and key challenges of scalable 2D-materials-integrated active NOEMS for on-chip miniaturized, lightweight, and multifunctional integration applications.

Current Trends in Nanomaterials for Metal Oxide-Based Conductometric Gas Sensors: Advantages and Limitations-Part 2: Porous 2D Nanomaterials

This article discusses the features of the synthesis and application of porous two-dimensional nanomaterials in developing conductometric gas sensors based on metal oxides. It is concluded that using porous 2D nanomaterials and 3D structures based on them is a promising approach to improving the parameters of gas sensors, such as sensitivity and the rate of response. The limitations that may arise when using 2D structures in gas sensors intended for the sensor market are considered.

Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications

Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.

A "Click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance

Two-dimensional (2D) materials with the atomically thin thickness have attracted great interest in the post-Moore's Law era because of their tremendous potential to continue transistor downscaling and offered advances in device performance at the atomic limit. However, the metal-semiconductor contact is the bottleneck in field-effect transistors (FETs) integrating 2D semiconductors as channel materials. A robust and tunable doping method at the source and drain region of 2D transistors to minimize the contact resistance is highly sought after. Here we report a stable carrier doping method via the mild covalent grafting of maleimides on the surface of 2D transition metal dichalcogenides. The chemisorbed interaction contributes to the efficient carrier doping without degrading the high-performance carrier transport. Density functional theory results further illustrate that the molecular functionalization leads to the mild hybridization and the negligible impact on the conduction bands of monolayer MoS₂, avoiding the random scattering from the dopants. Differently from reported molecular treatments, our strategy displays high thermal stability (above 300 °C) and it is compatible with micro/nano processing technology. The contact resistance of MoS₂ FETs can be greatly reduced by ∼12 times after molecular functionalization. The Schottky barrier of 44 meV is achieved on monolayer MoS₂ FETs, demonstrating efficient charge injection between metal and 2D semiconductor. The mild covalent functionalization of molecules on 2D semiconductors represents a powerful strategy to perform the carrier doping and the device optimization.

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms

2D transition metal chalcogenide (TMDC) materials, such as MoS₂ , have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS₂ have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling-down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS₂ beyond the traditional complementary-metal-oxide semiconductor in order to summarize obstacles to the goal of developing high-density and low-power integrated circuits (ICs). Finally, prospects for the use of MoS₂ in large-scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of "more than Moore" research.

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy-efficient information processing of the brain. While non-volatile memory (NVM) based on resistive switches, phase-change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi-terminal device concepts are required for more sophisticated bio-realistic functions. Of particular interest are memtransistors based on low-dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi-terminal NVM devices including dual-gated floating-gate memories, dual-gated ferroelectric transistors, and dual-gated van der Waals heterojunctions. The different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase-changes properties of nanomaterials. Finally, strategies for achieving wafer-scale integration of memtransistors and multi-terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.

Challenges and Opportunities of Chemiresistors Based on Microelectromechanical Systems for Chemical Olfaction

Microelectromechanical-system (MEMS)-based semiconductor gas sensors are considered one of the fastest-growing, interdisciplinary high technologies during the post-Moore era. Modern advancements within this arena include wearable electronics, Internet of Things, and artificial brain-inspired intelligence, among other modalities, thus bringing opportunities to drive MEMS-based gas sensors with higher performance, lower costs, and wider applicability. However, the high demand for miniature and micropower sensors with unified processes on a single chip imposes great challenges. This review focuses on recent developments and pitfalls in MEMS-based micro- and nanoscale gas sensors and details future trends. We also cover the background of the topic, seminal efforts, current applications and challenges, and opportunities for next-generation systems.

Recent Progress in 1D Contacts for 2D-Material-Based Devices

Recent studies have intensively examined 2D materials (2DMs) as promising materials for use in future quantum devices due to their atomic thinness. However, a major limitation occurs when 2DMs are in contact with metals: a van der Waals (vdW) gap is generated at the 2DM-metal interfaces, which induces metal-induced gap states that are responsible for an uncontrollable Schottky barrier (SB), Fermi-level pinning (FLP), and high contact resistance (R_C ), thereby substantially lowering the electronic mobility of 2DM-based devices. Here, vdW-gap-free 1D edge contact is reviewed for use in 2D devices with substantially suppressed carrier scattering of 2DMs with hexagonal boron nitride (hBN) encapsulation. The 1D contact further enables uniform carrier transport across multilayered 2DM channels, high-density transistor integration independent of scaling, and the fabrication of double-gate transistors suitable for demonstrating unique quantum phenomena of 2DMs. The existing 1D contact methods are reviewed first. As a promising technology toward the large-scale production of 2D devices, seamless lateral contacts are reviewed in detail. The electronic, optoelectronic, and quantum devices developed via 1D contacts are subsequently discussed. Finally, the challenges regarding the reliability of 1D contacts are addressed, followed by an outlook of 1D contact methods.

The Magnetic Genome of Two-Dimensional van der Waals Materials

Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

Enhanced Photogating Effect in Graphene Photodetectors via Potential Fluctuation Engineering

The photogating effect in hybrid structures has manifested itself as a reliable and promising approach for photodetectors with ultrahigh responsivity. A crucial factor of the photogating effect is the built-in potential at the interface, which controls the separation and harvesting of photogenerated carriers. So far, the primary efforts of designing the built-in potential rely on discovering different materials and developing multilayer structures, which may raise problems in the compatibility with the standard semiconductor production line. Here, we report an enhanced photogating effect in a monolayer graphene photodetector based on a structured substrate, where the built-in potential is established by the mechanism of potential fluctuation engineering. We find that the enhancement factor of device responsivity is related to a newly defined parameter, namely, fluctuation period rate (P_f). Compared to the device without a nanostructured substrate, the responsivity of the device with an optimized P_f is enhanced by 100 times, reaching a responsivity of 240 A/W and a specific detectivity, D*, of 3.4 × 10¹² Jones at 1550 nm wavelength and room temperature. Our experimental results are supported by both theoretical analysis and numerical simulation. Since our demonstration of the graphene photodetectors leverages the engineering of structures with monolayer graphene rather than materials with a multilayer complex structure. it should be universal and applicable to other hybrid photodetectors.

2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges

A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.

Switchable Photoresponse Mechanisms Implemented in Single van der Waals Semiconductor/Metal Heterostructure

van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been extensively studied for functional applications, and most of the reported devices work with sole mechanism. The emerging metallic 2D materials provide us new options for building functional vdW heterostructures via rational band engineering design. Here, we investigate the vdW semiconductor/metal heterostructure built with 2D semiconducting InSe and metallic 1T-phase NbTe2, whose electron affinity χInSe and work function ΦNbTe2 almost exactly align. Electrical characterization verifies exceptional diode-like rectification ratio of >103 for the InSe/NbTe2 heterostructure device. Further photocurrent mappings reveal the switchable photoresponse mechanisms of this heterostructure or, in other words, the alternative roles that metallic NbTe2 plays. Specifically, this heterostructure device works in a photovoltaic manner under reverse bias, whereas it turns to phototransistor with InSe channel and NbTe2 electrode under high forward bias. The switchable photoresponse mechanisms originate from the band alignment at the interface, where the band bending could be readily adjusted by the bias voltage. In addition, a conceptual optoelectronic logic gate is proposed based on the exclusive working mechanisms. Finally, the photodetection performance of this heterostructure is represented by an ultrahigh responsivity of ∼84 A/W to 532 nm laser. Our results demonstrate the valuable application of 2D metals in functional devices, as well as the potential of implementing photovoltaic device and phototransistor with single vdW heterostructure.

Low Sintering Temperature Nano-Silver Pastes with High Bonding Strength by Adding Silver 2-Ethylhexanoate

A silver precursor (silver 2-ethylhexanoate) and silver nanoparticles were synthesized and used to prepare a low sintering temperature nano-silver paste (PM03). We optimized the amount of silver 2-ethylhexanoate added and the sintering temperature to obtain the best performance of the nano-silver paste. The relationship between the microstructures and properties of the paste was studied. The addition of silver 2-ethylhexanoate resulted in less porosity, leading to lower resistivity and higher shear strength. Thermal compression of the paste PM03 at 250 °C with 10 MPa pressure for 30 min was found to be the proper condition for copper-to-copper bonding. The resistivity was (3.50 ± 0.02) × 10^-7 Ω∙m, and the shear strength was 57.48 MPa.

Bismuth-based photocatalyst for photocatalytic oxidation of flue gas mercury removal: A review

Photocatalytic oxidation method is a promising technology for solving flue gas mercury (Hg) pollution from industrial plants. Semiconductor photocatalysts have been widely applied in energy conversion and environmental remediation. However, key issues such as low light absorption capacity, wide energy band gap, and poor physicochemical stability severely limit the application of photocatalysts in practical industrial plants. In recent years, bismuth-based (Bi-based) photocatalysts, including bismuth oxide halide BiOX (X = Cl, Br or I), bismuth salt oxymetal BiVO₄, and BiOIO₃ etc., have increasingly aroused scientists' attention due to their peculiar crystalline geometric structures, tunable electronic structure and high photocatalytic performance. In present review, we firstly review the photocatalytic reaction mechanism and main photocatalytic oxidation mechanism of mercury. Secondly, the synthetic methods of Bi-based photocatalysts are summarized. Then, according to the mechanism of mercury removal, the experimental modifying approaches including heterojunction making, external atoms doping, defect creating, and crystal face regulating to promote the photocatalytic oxidation of mercury removal are summarized, as well as the determination of the band gap and electronic density of states (DOS) of Bi-based photocatalysts to elucidate the photocatalytic oxidation mechanism via density functional theory (DFT) calculation. Furthermore, constructing electronic transmission channels is an efficient way to improve the photocatalytic activity. Finally, challenges and perspectives of Bi-based photocatalyst for photocatalytic oxidation of mercury removal are presented. In addition, the excellent performance photocatalysts and efficient pollution removal equipment for mercury removal in industrial plants are still required in-depth study.

Surface Ohmic Conductivity on a Mott Insulator Based on a One-dimensional Bromide-bridged Nickel(III) Complex

Ohmic contacts are of critical importance to improve the performance of semiconductor devices as well as those of low-dimensional materials. Halogen-bridged metal complexes (MX-Chains) are fascinating quasi-one-dimensional (1D) electronic materials. However, reports on the electrical characteristics of MX-Chains remain elusive. Herein, we report the electrical characteristics of single crystals of [Ni(chxn)₂ Br]Br₂ (chxn: (1R,2R)-(-)-1,2-cyclohexanediamine), which is a 1D Mott insulator, using different probe arrangements. [Ni(chxn)₂ Br]Br₂ was shown for the first time to exhibit Ohmic characteristics on the crystal surface, albeit that the conductivity behavior of the interior of the crystal is nonlinear due to the Joule heating effect. The current flow on the surface is shallow (a few micrometers in depth) despite the millimeter-scale crystal size; this phenomenon is strongly connected to its structural anisotropy. The Ohmic contact revealed in this work should be valuable for the application of MX-Chains as electronic devices in the near future.

Dimensionality-Inhibited Chemical Doping in Two-Dimensional Semiconductors: The Phosphorene and MoS2 from Charge-Correction Method

Despite the great appeal of two-dimensional semiconductors for electronics and optoelectronics, to achieve the required charge carrier concentrations by means of chemical doping remains a challenge due to large defect ionization energies (IEs). Here, by decomposing the defect IEs into three parts based on ionization process, we propose a conceptual picture that the large defect IEs are caused by two effects of reduced dimensionality. While the quantum confinement effect makes the neutral single-electron point defect levels deep, the reduced screening effect leads to high energy cost for the electronic relaxation. The first-principles calculations for black phosphorus and MoS₂ do demonstrate the general trend. Using BP monolayer either embedded into dielectric continuum or encapsulated between two hBN layers, we demonstrate the feasibility of increasing the screening to reduce the defect IEs. Our analysis is expected to help achieve effective carrier doping and open ways toward more extensive applications of 2D semiconductors.

PSMA-targeted arsenic nanosheets: a platform for prostate cancer therapy via ferroptosis and ATM deficiency-triggered chemosensitization

Ferroptosis, a newly recognized form of non-apoptotic cell death, has recently been introduced for effective cancer therapy. The reported ferroptosis-inducing nanomaterials mainly consisted of metal-based components. Herein, we designed an inorganic metal-free nanoplatform, PSMA-targeted arsenic nanosheets (PMANs), which simultaneously increased glutathione (GSH) consumption, suppressed solute carrier family 7 member 11 (SLC7A11) and glutathione-dependent peroxidase 4 (GPX4) expression, and promoted the generation of reactive oxygen species (ROS) and lipid peroxides (LPO). In addition, owing to the large surface area, PMANs efficiently transported doxorubicin (DOX) to prostate cancer for synergistic therapy. Surprisingly, we found that PMANs could sensitize prostate cancer cells to DOX through downregulating the expression of ataxia telangiectasia mutated (ATM), which further augmented the GPX4 downregulation-mediated ferroptotic tumoricidal effect. Given that arsenic trioxide has been routinely and successfully used in the clinical treatment of leukemia for a long time, we anticipate that PMANs will offer a promising strategy for prostate cancer therapy.

High-Resolution Van der Waals Stencil Lithography for 2D Transistors

2D semiconductors have attracted tremendous attention as an atomically thin channel for transistors with superior immunity to short-channel effects. However, with atomic thin structure, the delicate 2D lattice is not fully compatible with conventional lithography processes that typically involve high-energy photon/electron radiation and unavoidable polymer residues, posing a key limitation for high performance 2D transistors. Here, a novel van der Waals (vdW) stencil lithography technique based on dry mask lamination process is developed. By pre-fabricating polymethyl methacrylate (PMMA) resist with designed patterns, the whole PMMA mask layers could be mechanically released from the sacrifice wafer and physically laminated on top of various 2D semiconductors. The vdW stencil lithography ensures pristine 2D surface without any high-energy electron/photon radiation, polymer residues, or chemical doping effects in conventional lithography process; and the soft nature of PMMA enables intimate contact between the mask and the 2D materials without physical gap, leading to ultra-high resolution down to 60 nm. Together, by applying vdW stencil lithography for 2D semiconductors, high performance transistors are demonstrated. Our method not only demonstrates improved 2D transistor performance without lithography induced damages, but also provides a new vdW stencil lithography technique for 2D materials with high resolution.

Ferroelectric-tuned van der Waals heterojunction with band alignment evolution

Van der Waals integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. In a specific van der Waals heterojunction, the band alignment engineering is crucial and feasible to realize high performance and multifunctionality. Here, we design a ferroelectric-tuned van der Waals heterojunction device structure by integrating a GeSe/MoS₂ VHJ and poly (vinylidene fluoride-trifluoroethylene)-based ferroelectric polymer. An ultrahigh electric field derived from the ferroelectric polarization can effectively modulate the band alignment of the GeSe/MoS₂ heterojunction. Band alignment transition of the heterojunction from type II to type I is demonstrated. The combination of anisotropic GeSe with MoS₂ realizes a high-performance polarization-sensitive photodetector exhibiting low dark current of approximately 1.5 pA, quick response of 14 μs, and high detectivity of 4.7 × 10¹² Jones. Dichroism ratios are also enhanced by ferroelectric polarization in a broad spectrum from visible to near-infrared. The ferroelectric-tuned GeSe/MoS₂ van der Waals heterojunction has great potential for multifunctional detection applications in sophisticated light information sensing. More profoundly, the ferroelectric-tuned van der Waals heterojunction structure provides a valid band-engineering approach to creating versatile devices.

Reduced graphene oxide on silicon-based structure as novel broadband photodetector

Heterojunction photodetector based on reduced graphene oxide (rGO) has been realized using a spin coating technique. The electrical and optical characterization of bare GO and thermally reduced GO thin films deposited on glass substrate has been carried out. Ultraviolet-visible-infrared transmittance measurements of the GO and rGO thin films revealed broad absorption range, while the absorbance analysis evaluates rGO band gap of about 2.8 eV. The effect of GO reduction process on the photoresponse capability is reported. The current-voltage characteristics and the responsivity of rGO/n-Si based device have been investigated using laser diode wavelengths from UV up to IR spectral range. An energy band diagram of the heterojunction has been proposed to explain the current versus voltage characteristics. The device demonstrates a photoresponse at a broad spectral range with a maximum responsivity and detectivity of 0.20 A/W and 7 × 1010 cmHz/W, respectively. Notably, the obtained results indicate that the rGO based device can be useful for broadband radiation detection compatible with silicon device technology.

Recent Advances in Two-Dimensional Quantum Dots and Their Applications

Two-dimensional quantum dots have received a lot of attention in recent years due to their fascinating properties and widespread applications in sensors, batteries, white light-emitting diodes, photodetectors, phototransistors, etc. Atomically thin two-dimensional quantum dots derived from graphene, layered transition metal dichalcogenide, and phosphorene have sparked researchers' interest with their unique optical and electronic properties, such as a tunable energy bandgap, efficient electronic transport, and semiconducting characteristics. In this review, we provide in-depth analysis of the characteristics of two-dimensional quantum dots materials, their synthesis methods, and opportunities and challenges for novel device applications. This analysis will serve as a tipping point for learning about the recent breakthroughs in two-dimensional quantum dots and motivate more scientists and engineers to grasp two-dimensional quantum dots materials by incorporating them into a variety of electrical and optical fields.

Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics

Owing to their superior carrier mobility, strong light-matter interactions, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for application in electronic and optoelectronic devices, including rectifying diodes, transistors, memory, photodetectors, and light-emitting diodes. At the heart of these devices, Schottky, PN, and tunneling junctions are playing an essential role in defining device function. Intriguingly, the ultrathin thickness and unique van der Waals (vdW) interlayer coupling in 2D materials has rendered enormous opportunities for the design and tailoring of various 2D junctions, e.g. using Lego-like hetero-stacking, surface decoration, and field-effect modulation methods. Such flexibility has led to marvelous breakthroughs during the exploration of 2D electronics and optoelectronic devices. To advance further, it is imperative to provide an overview of existing strategies for the engineering of various 2D junctions for their integration in the future. Thus, in this review, we provide a comprehensive survey of previous efforts toward 2D Schottky, PN, and tunneling junctions, and the functional devices built from them. Though these junctions exhibit similar configurations, distinct strategies have been developed for their optimal figures of merit based on their working principles and functional purposes.

Wide-Bandgap CaSnO3 Perovskite As an Efficient and Selective Deep-UV Absorber for Self-Powered and High-Performance p-i-n Photodetector

Calcium stannate (CaSnO₃) is an inorganic perovskite material with an ultrawide bandgap (4.2-4.4 eV) that is associated with its unique structural characteristics. Owing to its remarkable optical and electric properties and high physical and chemical stability, it has recently drawn significant interest for various applications such as photocatalysts for the degradation of organic compounds and hydrogen production under UV radiation, gas sensors, and thermally stable capacitors. In this study, we demonstrate a self-powered deep-UV (DUV) p-i-n photodetector consisting of CaSnO₃ thin film as an efficient DUV absorber via a low-temperature solution process. The physical, optical, and electrical properties of the as-synthesized CaSnO₃ are characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy, ultraviolet-visible spectroscopy, photoluminescence spectroscopy, space charge limited current, and four-point probe measurements. As a key component in a p-i-n DUV photodetector, the thickness of the CaSnO₃ absorber layer and operating bias are optimized to enhance charge carrier transport, light absorption, and signal-to-noise ratio. As a result, the optimized device shows a high performance at zero bias under 254 nm UV illumination: with a specific detectivity of 1.56 × 10¹⁰ Jones, fast rise/fall time of 80/70 ms, and high 254:365 nm photocurrent rejection ratio of 5.5 along with a stable photoresponse during 100 continuous cycles initially as well as after 1 month of storage. Accordingly, this study suggests that a novel CaSnO₃-based photodiode prepared via a solution process can be employed for many practical DUV-detection applications.

Direct Optoelectronic Imaging of 2D Semiconductor-3D Metal Buried Interfaces

The semiconductor-metal junction is one of the most critical factors for high-performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal remains unclear. Herein, we report the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a recently developed metal-assisted transfer technique to expose the buried interface, which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with <20 nm resolution. To be specific, potential, conductance, and photoluminescence at the buried metal/MoS₂ interface are correlated as a function of a variety of metal deposition conditions as well as the type of metal contacts. We observe that direct evaporation of Au on MoS₂ induces a large strain of ∼5% in the MoS₂ which, coupled with charge transfer, leads to degenerate doping of the MoS₂ underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kΩ μm, as measured using local conductance probes. This approach was adopted to characterize MoS₂-In/Au alloy interfaces, demonstrating contact resistance as low as 63 kΩ μm. Our results highlight that the MoS₂/metal interface is sensitive to device fabrication methods and provide a universal strategy to characterize buried contact interfaces involving 2D semiconductors.

Core@shell and lateral heterostructures composed of SnS and NbS2

The spatial arrangement of heterostructures based on two-dimensional layered materials is important in controlling their electronic and optoelectronic properties. In this contribution, by controlling the reaction kinetics and thus the nucleation and growth sequence of p-type SnS and metallic NbS2, controllable preparation of both SnS@NbS2 core@shell and SnS/NbS2 lateral heterostructures was realized. The SnS@NbS2 core@shell heterostructures were further applied in photodetectors, and interestingly, a negative photoresponse was observed due to the Seebeck effect exerted on the NbS2 shell. Compared with the pure metallic NbS2, the SnS@NbS2 core@shell heterostructures showed a 15 times increased signal-to-noise ratio and much improved photocurrent stability, largely due to the charge and heat transfer between the SnS core and NbS2 shell.

Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi pinning effects and defect states. Here, we report a near-ideal rectifier in the all-2D Schottky junctions composed of the 2D metal 1 T'-MoTe2 and the semiconducting monolayer MoS2. We show that the van der Waals integration of the two 2D materials can efficiently address the severe Fermi pinning effect generated by conventional metals, leading to increased Schottky barrier height. Furthermore, by healing original atom-vacancies and reducing the intrinsic defect doping in MoS2, the Schottky barrier width can be effectively enlarged by 59%. The 1 T'-MoTe2/healed-MoS2 rectifier exhibits a near-unity ideality factor of ~1.6, a rectifying ratio of >5 × 105, and high external quantum efficiency exceeding 20%. Finally, we generalize the barrier optimization strategy to other Schottky junctions, defining an alternative solution to enhance the performance of 2D-material-based electronic devices.

One- and two-dimensional electrical contacts and transport properties in monolayer black phosphorene-Ni interface

Contacts between black phosphorene (BP) and metal electrodes are critical components of BP-based devices and can dramatically affect device performance. In this paper, we adopted first-principles calculations to explore binding energies, electronic structures, spatial potential distribution of monolayer BP-Ni interfaces in surface contact and edge contact types, and used density functional theoretical coupled with nonequilibrium Green's function method to investigate the electrical transport properties for transport systems of monolayer BP with Ni electrodes. Our calculated results indicate that contact type between monolayer BP and metal Ni electrodes may much affect the transport properties of monolayer BP-Ni devices. Interfacial interaction between Ni and monolayer BP in edge contact type is stronger than that in surface contact type. The potential distributions indicate that edge contact type is more beneficial for reducing contact resistance of monolayer BP-Ni contacts and conducive to improve the performance of BP-Ni electrode device.

Atomic-Level and Modulated Interfaces of Photocatalyst Heterostructure Constructed by External Defect-Induced Strategy: A Critical Review

Despite the existence of numerous photocatalyst heterostructures, their separation efficiency and charge flow precision remain low due to the poor study on interfacial properties. The photocatalysts with confined defects can effectively control the photogenerated carrier migration, but the metastability of such defects considerably decreases the photocatalyst stability. Meanwhile, the introduction of defective region can increase the coordinative unsaturation and delocalize local electrons to promote their interactions with the molecules/ions in that region. The selective growth of modulated heterogeneous interface by defect-induced strategy may not only increase the stability of defective structures, but also enhance the migration of interfacial charges. Using this method, photocatalytic heterostructures with low contact resistances and intimate interfaces are constructed to achieve the optimal charge migration in terms of efficiency and accuracy. In this work, the point, linear, and planar heterogeneous interfaces and related defect engineering techniques are discussed. Particularly, it is focused on the external, defect-induced interfacial heterogeneities with various spatial and dimensional configurations, which exhibit modulated and controllable interfacial properties. Furthermore, the main aspects of fabricating photocatalyst heterostructures by the defect-induced strategy, including the i) controllable generation of defects, ii) advanced characterization methods, and iii) elaborate construction of the minimal interface, are described.

Strategy and Future Prospects to Develop Room-Temperature-Recoverable NO2 Gas Sensor Based on Two-Dimensional Molybdenum Disulfide

Nitrogen dioxide (NO2), a hazardous gas with acidic nature, is continuously being liberated in the atmosphere due to human activity. The NO2 sensors based on traditional materials have limitations of high-temperature requirements, slow recovery, and performance degradation under harsh environmental conditions. These limitations of traditional materials are forcing the scientific community to discover future alternative NO2 sensitive materials. Molybdenum disulfide (MoS2) has emerged as a potential candidate for developing next-generation NO2 gas sensors. MoS2 has a large surface area for NO2 molecules adsorption with controllable morphologies, facile integration with other materials and compatibility with internet of things (IoT) devices. The aim of this review is to provide a detailed overview of the fabrication of MoS2 chemiresistance sensors in terms of devices (resistor and transistor), layer thickness, morphology control, defect tailoring, heterostructure, metal nanoparticle doping, and through light illumination. Moreover, the experimental and theoretical aspects used in designing MoS2-based NO2 sensors are also discussed extensively. Finally, the review concludes the challenges and future perspectives to further enhance the gas-sensing performance of MoS2. Understanding and addressing these issues are expected to yield the development of highly reliable and industry standard chemiresistance NO2 gas sensors for environmental monitoring.

Melt Blown Fiber-Assisted Solvent-Free Device Fabrication at Low-Temperature

In this paper, we propose a solvent-free device fabrication method using a melt-blown (MB) fiber to minimize potential chemical and thermal damages to transition-metal-dichalcogenides (TMDCs)-based semiconductor channel. The fabrication process is composed of three steps; (1) MB fibers alignment as a shadow mask, (2) metal deposition, and (3) lifting-up MB fibers. The resulting WSe₂-based p-type metal-oxide-semiconductor (PMOS) device shows an ON/OFF current ratio of ~2 × 10⁵ (ON current of ~-40 µA) and a remarkable linear hole mobility of ~205 cm²/V·s at a drain voltage of -0.1 V. These results can be a strong evidence supporting that this MB fiber-assisted device fabrication can effectively suppress materials damage by minimizing chemical and thermal exposures. Followed by an MoS₂-based n-type MOS (NMOS) device demonstration, a complementary MOS (CMOS) inverter circuit application was successfully implemented, consisted of an MoS₂ NMOS and a WSe₂ PMOS as a load and a driver transistor, respectively. This MB fiber-based device fabrication can be a promising method for future electronics based on chemically reactive or thermally vulnerable materials.