1
|
Debashis P, Ryu H, Steinhardt R, Buragohain P, Plombon JJ, Maxey K, O'Brien KP, Kim R, Sen Gupta A, Rogan C, Lux J, Tung IC, Adams D, Gulseren M, Verma Penumatcha A, Shivaraman S, Li H, Zhong T, Harlson S, Tronic T, Oni A, Putna S, Clendenning SB, Metz M, Radosavljevic M, Avci U, Young IA. Ultra-High- k Ferroelectric BaTiO 3 Perovskite in the Gate Stack for Two-Dimensional WSe 2 p-Type High-Performance Transistors. NANO LETTERS 2024; 24:12353-12360. [PMID: 39351895 DOI: 10.1021/acs.nanolett.4c02069] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/10/2024]
Abstract
The experimental demonstration of a p-type 2D WSe2 transistor with a ferroelectric perovskite BaTiO3 gate oxide is presented. The 30 nm thick BaTiO3 gate stack shows a robust ferroelectric hysteresis with a remanent polarization of 20 μC/cm2 and further enables a capacitance equivalent thickness of 0.5 nm in the hybrid WSe2/BaTiO3 stack due to its high dielectric constant of 323. We demonstrate one of the best ON currents for perovskite gate 2D transistors in the literature. This is enabled by high-quality epitaxial growth of BaTiO3 and a single 2D layer transfer based fabrication method that is shown to be amenable to silicon platforms. This demonstration is an important milestone toward the integration of crystalline complex oxides with 2D channel materials for scaled CMOS and low-voltage ferroelectric logic applications.
Collapse
Affiliation(s)
| | - Hojoon Ryu
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Rachel Steinhardt
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Pratyush Buragohain
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - John J Plombon
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Kirby Maxey
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Kevin P O'Brien
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Raseong Kim
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Arnab Sen Gupta
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Carly Rogan
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Jennifer Lux
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - I-Cheng Tung
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Dominique Adams
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | | | | | - Shriram Shivaraman
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Hai Li
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Ting Zhong
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Shane Harlson
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Tristan Tronic
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Adedapo Oni
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Steve Putna
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Scott B Clendenning
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Matthew Metz
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Marko Radosavljevic
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Uygar Avci
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Ian A Young
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, United States
| |
Collapse
|
2
|
Sun Z, Liu J, Xu Y, Xiong X, Li Y, Wang M, Liu K, Li H, Wu Y, Zhai T. Low-Symmetry Van der Waals Dielectric GaInS 3 Triggered 2D MoS 2 Giant Anisotropy via Symmetry Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2410469. [PMID: 39328046 DOI: 10.1002/adma.202410469] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2024] [Revised: 09/06/2024] [Indexed: 09/28/2024]
Abstract
Low-symmetry structures in van der Waals materials have facilitated the advancement of anisotropic electronic and optoelectronic devices. However, the intrinsic low symmetry structure exhibits a small adjustable anisotropy ratio (1-10), which hinders its further assembly and processing into high-performance devices. Here, a novel 2D anisotropic dielectric, GaInS3 (GIS), which induces isotropic MoS2 to exhibit significant anisotropic optical and electrical responses is demonstrated. With the excellent gate modulation ability of 2D GIS (dielectric constant k ∼12), MoS2 field effect transistor (FET) shows an adjustable conductance ratio from isotropic to anisotropic under dual-gate modulation, up to 106. Theoretical calculations indicate that anisotropy originates from lattice mismatch-induced charge density deformation at the interface. Moreover, the MoS2/GIS photodetector demonstrates high responsivity (≈4750 A W-1) and a large dichroic ratio (≈167). The anisotropic van der Waals dielectric GIS paves the way for the development of 2D transition metal dichalcogenides (TMDCs) in the fields of anisotropic photonics, electronics, and optoelectronics.
Collapse
Affiliation(s)
- Zongdong Sun
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Jie Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Yongshan Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Xiong Xiong
- School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing, 100871, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
- Research Institute of Huazhong University of Science and Technology in Shenzhen, Shenzhen, 518057, P. R. China
| | - Meihui Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Yanqing Wu
- School of Integrated Circuits and Beijing Advanced Innovation Center for Integrated Circuits, Peking University, Beijing, 100871, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
- Research Institute of Huazhong University of Science and Technology in Shenzhen, Shenzhen, 518057, P. R. China
- Optics Valley Laboratory, Hubei, 430074, P. R. China
| |
Collapse
|
3
|
Zheng F, Li LJ. Microscopic characterizations for 2D material-based advanced electronics. Micron 2024; 187:103707. [PMID: 39277960 DOI: 10.1016/j.micron.2024.103707] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2024] [Revised: 08/14/2024] [Accepted: 08/23/2024] [Indexed: 09/17/2024]
Abstract
Two-dimensional (2D) materials have gained significant attention as potential candidates for next-generation electronics, owing to their unique properties such as ultrathin layer thickness, mechanical flexibility, and tunable bandgaps. The distinctive characteristics of 2D materials necessitate the development of nanoscale advanced characterization methods. In this review, we explore the role of microscopy techniques in developing 2D materials-based electronics, from material synthesis and characterization to device performance and reliability. We address the applications of microscopies by delving into the perspectives of channel materials, metal contacts, dielectric materials, and device architectures. Additionally, we provide an outlook on the future directions and potential utilization of microscopy techniques in future 2D semiconductor industry.
Collapse
Affiliation(s)
- Fangyuan Zheng
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China
| | - Lain-Jong Li
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, China.
| |
Collapse
|
4
|
Liang M, Yan H, Wazir N, Zhou C, Ma Z. Two-Dimensional Semiconductors for State-of-the-Art Complementary Field-Effect Transistors and Integrated Circuits. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1408. [PMID: 39269071 PMCID: PMC11397490 DOI: 10.3390/nano14171408] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2024] [Revised: 08/23/2024] [Accepted: 08/26/2024] [Indexed: 09/15/2024]
Abstract
As the trajectory of transistor scaling defined by Moore's law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high- κ dielectrics. Furthermore, the uniform growth of wafer-scale 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review examines the latest breakthroughs with a focus on the preparation of 2D channel materials and device engineering in advanced FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D FETs. These findings extend to potential integrated circuit applications in diverse functionalities.
Collapse
Affiliation(s)
- Meng Liang
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
| | - Han Yan
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
| | - Nasrullah Wazir
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
| | - Changjian Zhou
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
| | - Zichao Ma
- School of Microelectronics, South China University of Technology, Guangzhou 511442, China
| |
Collapse
|
5
|
Zeng D, Zhang Z, Xue Z, Zhang M, Chu PK, Mei Y, Tian Z, Di Z. Single-crystalline metal-oxide dielectrics for top-gate 2D transistors. Nature 2024; 632:788-794. [PMID: 39112708 PMCID: PMC11338823 DOI: 10.1038/s41586-024-07786-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Accepted: 07/04/2024] [Indexed: 08/17/2024]
Abstract
Two-dimensional (2D) structures composed of atomically thin materials with high carrier mobility have been studied as candidates for future transistors1-4. However, owing to the unavailability of suitable high-quality dielectrics, 2D field-effect transistors (FETs) cannot attain the full theoretical potential and advantages despite their superior physical and electrical properties3,5,6. Here we demonstrate the fabrication of atomically thin single-crystalline Al2O3 (c-Al2O3) as a high-quality top-gate dielectric in 2D FETs. By using intercalative oxidation techniques, a stable, stoichiometric and atomically thin c-Al2O3 layer with a thickness of 1.25 nm is formed on the single-crystalline Al surface at room temperature. Owing to the favourable crystalline structure and well-defined interfaces, the gate leakage current, interface state density and dielectric strength of c-Al2O3 meet the International Roadmap for Devices and Systems requirements3,5,7. Through a one-step transfer process consisting of the source, drain, dielectric materials and gate, we achieve top-gate MoS2 FETs characterized by a steep subthreshold swing of 61 mV dec-1, high on/off current ratio of 108 and very small hysteresis of 10 mV. This technique and material demonstrate the possibility of producing high-quality single-crystalline oxides suitable for integration into fully scalable advanced 2D FETs, including negative capacitance transistors and spin transistors.
Collapse
Affiliation(s)
- Daobing Zeng
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Ziyang Zhang
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Zhongying Xue
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
| | - Miao Zhang
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Kowloon, China
| | - Yongfeng Mei
- Department of Materials Science, Fudan University, Shanghai, China
| | - Ziao Tian
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
| | - Zengfeng Di
- State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China.
| |
Collapse
|
6
|
Lee S, Song MK, Zhang X, Suh JM, Ryu JE, Kim J. Mixed-Dimensional Integration of 3D-on-2D Heterostructures for Advanced Electronics. NANO LETTERS 2024. [PMID: 39037750 DOI: 10.1021/acs.nanolett.4c02663] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/23/2024]
Abstract
Two-dimensional (2D) materials have garnered significant attention due to their exceptional properties requisite for next-generation electronics, including ultrahigh carrier mobility, superior mechanical flexibility, and unusual optical characteristics. Despite their great potential, one of the major technical difficulties toward lab-to-fab transition exists in the seamless integration of 2D materials with classic material systems, typically composed of three-dimensional (3D) materials. Owing to the self-passivated nature of 2D surfaces, it is particularly challenging to achieve well-defined interfaces when forming 3D materials on 2D materials (3D-on-2D) heterostructures. Here, we comprehensively review recent progress in 3D-on-2D incorporation strategies, ranging from direct-growth- to layer-transfer-based approaches and from non-epitaxial to epitaxial integration methods. Their technological advances and obstacles are rigorously discussed to explore optimal, yet viable, integration strategies of 3D-on-2D heterostructures. We conclude with an outlook on mixed-dimensional integration processes, identifying key challenges in state-of-the-art technology and suggesting potential opportunities for future innovation.
Collapse
Affiliation(s)
- Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Min-Kyu Song
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Jung-El Ryu
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| |
Collapse
|
7
|
Kang T, Park J, Jung H, Choi H, Lee SM, Lee N, Lee RG, Kim G, Kim SH, Kim HJ, Yang CW, Jeon J, Kim YH, Lee S. High-κ Dielectric (HfO 2)/2D Semiconductor (HfSe 2) Gate Stack for Low-Power Steep-Switching Computing Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312747. [PMID: 38531112 DOI: 10.1002/adma.202312747] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2023] [Revised: 02/20/2024] [Indexed: 03/28/2024]
Abstract
Herein, a high-quality gate stack (native HfO2 formed on 2D HfSe2) fabricated via plasma oxidation is reported, realizing an atomically sharp interface with a suppressed interface trap density (Dit ≈ 5 × 1010 cm-2 eV-1). The chemically converted HfO2 exhibits dielectric constant, κ ≈ 23, resulting in low gate leakage current (≈10-3 A cm-2) at equivalent oxide thickness ≈0.5 nm. Density functional calculations indicate that the atomistic mechanism for achieving a high-quality interface is the possibility of O atoms replacing the Se atoms of the interfacial HfSe2 layer without a substitution energy barrier, allowing layer-by-layer oxidation to proceed. The field-effect-transistor-fabricated HfO2/HfSe2 gate stack demonstrates an almost ideal subthreshold slope (SS) of ≈61 mV dec-1 (over four orders of IDS) at room temperature (300 K), along with a high Ion/Ioff ratio of ≈108 and a small hysteresis of ≈10 mV. Furthermore, by utilizing a device architecture with separately controlled HfO2/HfSe2 gate stack and channel structures, an impact ionization field-effect transistor is fabricated that exhibits n-type steep-switching characteristics with a SS value of 3.43 mV dec-1 at room temperature, overcoming the Boltzmann limit. These results provide a significant step toward the realization of post-Si semiconducting devices for future energy-efficient data-centric computing electronics.
Collapse
Affiliation(s)
- Taeho Kang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Joonho Park
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Hanggyo Jung
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Haeju Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Sang-Min Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Nayeong Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Ryong-Gyu Lee
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Gahye Kim
- Department of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Seung-Hwan Kim
- Center for Spintronics, Korea Institute of Science and Technology/Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South Korea
| | - Hyung-Jun Kim
- Center for Spintronics, Korea Institute of Science and Technology/Hwarang-ro 14-gil, Seongbuk-gu, Seoul, 02792, South Korea
| | - Cheol-Woong Yang
- Department of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Jongwook Jeon
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| | - Yong-Hoon Kim
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Sungjoo Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon, 16419, South Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon, 16419, South Korea
| |
Collapse
|
8
|
Ryu H, Kim H, Jeong JH, Kim BC, Watanabe K, Taniguchi T, Lee GH. Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb 2O 3 for 2D Electronics. ACS NANO 2024; 18:13098-13105. [PMID: 38703120 DOI: 10.1021/acsnano.4c01883] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2024]
Abstract
Two-dimensional (2D) semiconducting materials have attracted significant interest as promising candidates for channel materials owing to their high mobility and gate tunability at atomic-layer thickness. However, the development of 2D electronics is impeded due to the difficulty in formation of high-quality dielectrics with a clean and nondestructive interface. Here, we report the direct van der Waals epitaxial growth of a molecular crystal dielectric, Sb2O3, on 2D materials by physical vapor deposition. The grown Sb2O3 nanosheets showed epitaxial relations of 0 and 180° with the 2D template, maintaining high crystallinity and an ultrasharp vdW interface with the 2D materials. As a result, the Sb2O3 nanosheets exhibited a high breakdown field of 18.6 MV/cm for 2L Sb2O3 with a thickness of 1.3 nm and a very low leakage current of 2.47 × 10-7 A/cm2 for 3L Sb2O3 with a thickness of 1.96 nm. We also observed two types of grain boundaries (GBs) with misorientation angles of 0 and 60°. The 0°-GB with a well-stitched boundary showed higher electrical and thermal stabilities than those of the 60°-GB with a disordered boundary. Our work demonstrates a method to epitaxially grow molecular crystal dielectrics on 2D materials without causing any damage, a requirement for high-performance 2D electronics.
Collapse
Affiliation(s)
- Huije Ryu
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Hyunjun Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Jae Hwan Jeong
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Byeong Chan Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Gwan-Hyoung Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| |
Collapse
|
9
|
Tang X, Hao Q, Hou X, Lan L, Li M, Yao L, Zhao X, Ni Z, Fan X, Qiu T. Exploring and Engineering 2D Transition Metal Dichalcogenides toward Ultimate SERS Performance. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312348. [PMID: 38302855 DOI: 10.1002/adma.202312348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2023] [Revised: 01/23/2024] [Indexed: 02/03/2024]
Abstract
Surface-enhanced Raman spectroscopy (SERS) is an ultrasensitive surface analysis technique that is widely used in chemical sensing, bioanalysis, and environmental monitoring. The design of the SERS substrates is crucial for obtaining high-quality SERS signals. Recently, 2D transition metal dichalcogenides (2D TMDs) have emerged as high-performance SERS substrates due to their superior stability, ease of fabrication, biocompatibility, controllable doping, and tunable bandgaps and excitons. In this review, a systematic overview of the latest advancements in 2D TMDs SERS substrates is provided. This review comprehensively summarizes the candidate 2D TMDs SERS materials, elucidates their working principles for SERS, explores the strategies to optimize their SERS performance, and highlights their practical applications. Particularly delved into are the material engineering strategies, including defect engineering, alloy engineering, thickness engineering, and heterojunction engineering. Additionally, the challenges and future prospects associated with the development of 2D TMDs SERS substrates are discussed, outlining potential directions that may lead to significant breakthroughs in practical applications.
Collapse
Affiliation(s)
- Xiao Tang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Qi Hao
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Xiangyu Hou
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
- Department of Chemistry, National University of Singapore, Singapore, 117542, Singapore
| | - Leilei Lan
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
- School of Mechanics and Optoelectronic Physics, Anhui University of Science and Technology, Huainan, 232001, China
| | - Mingze Li
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Lei Yao
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Xing Zhao
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Zhenhua Ni
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Xingce Fan
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| | - Teng Qiu
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, Nanjing, 211189, China
| |
Collapse
|
10
|
Jing Y, Dai X, Yang J, Zhang X, Wang Z, Liu X, Li H, Yuan Y, Zhou X, Luo H, Zhang D, Sun J. Integration of Ultrathin Hafnium Oxide with a Clean van der Waals Interface for Two-Dimensional Sandwich Heterostructure Electronics. NANO LETTERS 2024; 24:3937-3944. [PMID: 38526847 DOI: 10.1021/acs.nanolett.4c00117] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/27/2024]
Abstract
Integrating high-κ dielectrics with a small equivalent oxide thickness (EOT) with two-dimensional (2D) semiconductors for low-power consumption van der Waals (vdW) heterostructure electronics remains challenging in meeting both interface quality and dielectric property requirements. Here, we demonstrate the integration of ultrathin amorphous HfOx sandwiched within vdW heterostructures by the selective thermal oxidation of HfSe2 precursors. The self-cleaning process ensures a high-quality interface with a low interface state density of 1011-1012 cm-2 eV-1. The synthesized HfOx displays excellent dielectric properties with an EOT of ∼1.5 nm, i.e., a high κ of ∼16, an ultralow leakage current of 10-6 A/cm2, and an impressively high breakdown field of 9.5 MV/cm. This facilitates low-power consumption vdW heterostructure MoS2 transistors, demonstrating steep switching with a low subthreshold swing of 61 mV/decade. This one-step integration of high-κ dielectrics into vdW sandwich heterostructures holds immense potential for developing low-power consumption 2D electronics while meeting comprehensive dielectric requirements.
Collapse
Affiliation(s)
- Yumei Jing
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
| | - Xianfu Dai
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
| | - Junqiang Yang
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
| | - Xiaobin Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, China
| | - Zhongwang Wang
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
| | - Xiaochi Liu
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
| | - Huamin Li
- Department of Electrical Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States
| | - Yahua Yuan
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
| | - Xuefan Zhou
- Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Hang Luo
- Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Dou Zhang
- Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China
| | - Jian Sun
- School of Physics, Central South University, No. 932 South Lushan Road, Changsha 410083, China
| |
Collapse
|
11
|
Yin L, Cheng R, Ding J, Jiang J, Hou Y, Feng X, Wen Y, He J. Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits. ACS NANO 2024; 18:7739-7768. [PMID: 38456396 DOI: 10.1021/acsnano.3c10900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.
Collapse
Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jiahui Ding
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yutang Hou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
| |
Collapse
|
12
|
Sovizi S, Angizi S, Ahmad Alem SA, Goodarzi R, Taji Boyuk MRR, Ghanbari H, Szoszkiewicz R, Simchi A, Kruse P. Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering. Chem Rev 2023; 123:13869-13951. [PMID: 38048483 PMCID: PMC10756211 DOI: 10.1021/acs.chemrev.3c00147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2023] [Revised: 08/31/2023] [Accepted: 11/09/2023] [Indexed: 12/06/2023]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.
Collapse
Affiliation(s)
- Saeed Sovizi
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Shayan Angizi
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
| | - Sayed Ali Ahmad Alem
- Chair in
Chemistry of Polymeric Materials, Montanuniversität
Leoben, Leoben 8700, Austria
| | - Reyhaneh Goodarzi
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | | | - Hajar Ghanbari
- School of
Metallurgy and Materials Engineering, Iran
University of Science and Technology (IUST), Narmak, 16846-13114, Tehran, Iran
| | - Robert Szoszkiewicz
- Faculty of
Chemistry, Biological and Chemical Research Centre, University of Warsaw, Żwirki i Wigury 101, 02-089, Warsaw, Poland
| | - Abdolreza Simchi
- Department
of Materials Science and Engineering and Institute for Nanoscience
and Nanotechnology, Sharif University of
Technology, 14588-89694 Tehran, Iran
- Center for
Nanoscience and Nanotechnology, Institute for Convergence Science
& Technology, Sharif University of Technology, 14588-89694 Tehran, Iran
| | - Peter Kruse
- Department
of Chemistry and Chemical Biology, McMaster
University, Hamilton, Ontario L8S 4M1, Canada
| |
Collapse
|
13
|
Li Z, Huang J, Zhou L, Xu Z, Qin F, Chen P, Sun X, Liu G, Sui C, Qiu C, Lu Y, Gou H, Xi X, Ideue T, Tang P, Iwasa Y, Yuan H. An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces. Nat Commun 2023; 14:5568. [PMID: 37689758 PMCID: PMC10492835 DOI: 10.1038/s41467-023-41295-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/23/2023] [Accepted: 08/29/2023] [Indexed: 09/11/2023] Open
Abstract
Van der Waals dielectrics are fundamental materials for condensed matter physics and advanced electronic applications. Most dielectrics host isotropic structures in crystalline or amorphous forms, and only a few studies have considered the role of anisotropic crystal symmetry in dielectrics as a delicate way to tune electronic properties of channel materials. Here, we demonstrate a layered anisotropic dielectric, SiP2, with non-symmorphic twofold-rotational C2 symmetry as a gate medium which can break the original threefold-rotational C3 symmetry of MoS2 to achieve unexpected linearly-polarized photoluminescence and anisotropic second harmonic generation at SiP2/MoS2 interfaces. In contrast to the isotropic behavior of pristine MoS2, a large conductance anisotropy with an anisotropy index up to 1000 can be achieved and modulated in SiP2-gated MoS2 transistors. Theoretical calculations reveal that the anisotropic moiré potential at such interfaces is responsible for the giant anisotropic conductance and optical response. Our results provide a strategy for generating exotic functionalities at dielectric/semiconductor interfaces via symmetry engineering.
Collapse
Affiliation(s)
- Zeya Li
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Ling Zhou
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Zian Xu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Feng Qin
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Peng Chen
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Xiaojun Sun
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Gan Liu
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- School of Physics, Nanjing University, Nanjing, 210093, China
| | - Chengqi Sui
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China
| | - Yangfan Lu
- College of Materials Sciences and Engineering, National Engineering Research Center for Magnesium Alloys, Chongqing University, Chongqing, 400030, China
| | - Huiyang Gou
- Center for High Pressure Science and Technology Advanced Research, Beijing, 100094, China
| | - Xiaoxiang Xi
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- School of Physics, Nanjing University, Nanjing, 210093, China
| | - Toshiya Ideue
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan.
- Institute for Solid State Physics, The University of Tokyo, Chiba, 277-8581, Japan.
| | - Peizhe Tang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
- Max Planck Institute for the Structure and Dynamics of Matter, Center for Free Electron Laser Science, Hamburg, 22761, Germany.
| | - Yoshihiro Iwasa
- Quantum Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo, 113-8656, Japan
- RIKEN Center for Emergent Matter Science, Hirosawa 2-1, Wako, 351-0198, Japan
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
- College of Engineering and Applied Sciences, and Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210023, China.
| |
Collapse
|
14
|
Xu Y, Liu T, Liu K, Zhao Y, Liu L, Li P, Nie A, Liu L, Yu J, Feng X, Zhuge F, Li H, Wang X, Zhai T. Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors. NATURE MATERIALS 2023; 22:1078-1084. [PMID: 37537352 DOI: 10.1038/s41563-023-01626-w] [Citation(s) in RCA: 25] [Impact Index Per Article: 25.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2022] [Accepted: 07/05/2023] [Indexed: 08/05/2023]
Abstract
Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs). However, it remains challenging to integrate ultrathin and uniform high-κ dielectrics on 2D semiconductors to fabricate FETs with large gate capacitance. We report a versatile two-step approach to integrating high-quality dielectric film with sub-1 nm equivalent oxide thickness (EOT) on 2D semiconductors. Inorganic molecular crystal Sb2O3 is homogeneously deposited on 2D semiconductors as a buffer layer, which forms a high-quality oxide-to-semiconductor interface and offers a highly hydrophilic surface, enabling the integration of high-κ dielectrics via atomic layer deposition. Using this approach, we can fabricate monolayer molybdenum disulfide-based FETs with the thinnest EOT (0.67 nm). The transistors exhibit an on/off ratio of over 106 using an ultra-low operating voltage of 0.4 V, achieving unprecedently high gating efficiency. Our results may pave the way for the application of 2D materials in low-power ultrascaling electronics.
Collapse
Affiliation(s)
- Yongshan Xu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
| | - Teng Liu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China.
| | - Yinghe Zhao
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
| | - Lei Liu
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Penghui Li
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, China
| | - Anmin Nie
- Center for High Pressure Science, State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao, China
| | - Lixin Liu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
| | - Jun Yu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
| | - Xin Feng
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
| | - Fuwei Zhuge
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, China.
| |
Collapse
|
15
|
Lau CS, Das S, Verzhbitskiy IA, Huang D, Zhang Y, Talha-Dean T, Fu W, Venkatakrishnarao D, Johnson Goh KE. Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications. ACS NANO 2023. [PMID: 37257134 DOI: 10.1021/acsnano.3c03455] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
Collapse
Affiliation(s)
- Chit Siong Lau
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Sarthak Das
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ivan A Verzhbitskiy
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Ding Huang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Yiyu Zhang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Teymour Talha-Dean
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics and Astronomy, Queen Mary University of London, London E1 4NS, United Kingdom
| | - Wei Fu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Dasari Venkatakrishnarao
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, 117551, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue 639798, Singapore
| |
Collapse
|
16
|
Zhou K, Shang G, Hsu HH, Han ST, Roy VAL, Zhou Y. Emerging 2D Metal Oxides: From Synthesis to Device Integration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207774. [PMID: 36333890 DOI: 10.1002/adma.202207774] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Revised: 10/26/2022] [Indexed: 05/26/2023]
Abstract
2D metal oxides have aroused increasing attention in the field of electronics and optoelectronics due to their intriguing physical properties. In this review, an overview of recent advances on synthesis of 2D metal oxides and their electronic applications is presented. First, the tunable physical properties of 2D metal oxides that relate to the structure (various oxidation-state forms, polymorphism, etc.), crystallinity and defects (anisotropy, point defects, and grain boundary), and thickness (quantum confinement effect, interfacial effect, etc.) are discussed. Then, advanced synthesis methods for 2D metal oxides besides mechanical exfoliation are introduced and classified into solution process, vapor-phase deposition, and native oxidation on a metal source. Later, the various roles of 2D metal oxides in widespread applications, i.e., transistors, inverters, photodetectors, piezotronics, memristors, and potential applications (solar cell, spintronics, and superconducting devices) are discussed. Finally, an outlook of existing challenges and future opportunities in 2D metal oxides is proposed.
Collapse
Affiliation(s)
- Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Gang Shang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Hsiao-Hsuan Hsu
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| |
Collapse
|
17
|
Yang S, Liu K, Xu Y, Liu L, Li H, Zhai T. Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207901. [PMID: 36226584 DOI: 10.1002/adma.202207901] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 09/28/2022] [Indexed: 05/05/2023]
Abstract
2D semiconductors have emerged both as an ideal platform for fundamental studies and as promising channel materials in beyond-silicon field-effect-transistors due to their outstanding electrical properties and exceptional tunability via external field. However, the lack of proper dielectrics for 2D semiconductors has become a major roadblock for their further development toward practical applications. The prominent issues between conventional 3D dielectrics and 2D semiconductors arise from the integration and interface quality, where defect states and imperfections lead to dramatic deterioration of device performance. In this review article, the root causes of such issues are briefly analyzed and recent advances on some possible solutions, including various approaches of adapting conventional dielectrics to 2D semiconductors, and the development of novel dielectrics with van der Waals surface toward high-performance 2D electronics are summarized. Then, in the perspective, the requirements of ideal dielectrics for state-of-the-art 2D devices are outlined and an outlook for their future development is provided.
Collapse
Affiliation(s)
- Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yongshan Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Lixin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| |
Collapse
|
18
|
Uchiyama H, Maruyama K, Chen E, Nishimura T, Nagashio K. A Monolayer MoS 2 FET with an EOT of 1.1 nm Achieved by the Direct Formation of a High-κ Er 2 O 3 Insulator Through Thermal Evaporation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207394. [PMID: 36631287 DOI: 10.1002/smll.202207394] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2022] [Revised: 01/04/2023] [Indexed: 05/16/2023]
Abstract
Achieving the direct growth of an ultrathin gate insulator with high uniformity and high quality on monolayer transition metal dichalcogenides (TMDCs) remains a challenge due to the chemically inert surface of TMDCs. Although the main solution for this challenge is utilizing buffer layers before oxide is deposited on the atomic layer, this method drastically degrades the total capacitance of the gate stack. In this work, we constructed a novel direct high-κ Er2 O3 deposition system based on thermal evaporation in a differential-pressure-type chamber. A uniform Er2 O3 layer with an equivalent oxide thickness of 1.1 nm was achieved as the gate insulator for top-gated MoS2 field-effect transistors (FETs). The top gate Er2 O3 insulator without the buffer layer on MoS2 exhibited a high dielectric constant that reached 18.0, which is comparable to that of bulk Er2 O3 and is the highest among thin insulators (< 10 nm) on TMDCs to date. Furthermore, the Er2 O3 /MoS2 interface (Dit ≈ 6 × 1011 cm-2 eV-1 ) is confirmed to be clean and is comparable with that of the h-BN/MoS2 heterostructure. These results prove that high-quality dielectric properties with retained interface quality can be achieved by this novel deposition technique, facilitating the future development of 2D electronics.
Collapse
Affiliation(s)
- Haruki Uchiyama
- Department of Materials Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
- Department of Electronics, Nagoya University, Nagoya, 464-8603, Japan
| | - Kohei Maruyama
- Department of Materials Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Edward Chen
- Taiwan Semiconductor Manufacturing Company (TSMC) Ltd. , Hsinchu County, 300-096, Taiwan
| | - Tomonori Nishimura
- Department of Materials Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
| |
Collapse
|
19
|
Waltl M, Knobloch T, Tselios K, Filipovic L, Stampfer B, Hernandez Y, Waldhör D, Illarionov Y, Kaczer B, Grasser T. Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201082. [PMID: 35318749 DOI: 10.1002/adma.202201082] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2022] [Revised: 03/14/2022] [Indexed: 06/14/2023]
Abstract
Within the last decade, considerable efforts have been devoted to fabricating transistors utilizing 2D semiconductors. Also, small circuits consisting of a few transistors have been demonstrated, including inverters, ring oscillators, and static random access memory cells. However, for industrial applications, both time-zero and time-dependent variability in the performance of the transistors appear critical. While time-zero variability is primarily related to immature processing, time-dependent drifts are dominated by charge trapping at defects located at the channel/insulator interface and in the insulator itself, which can substantially degrade the stability of circuits. At the current state of the art, 2D transistors typically exhibit a few orders of magnitude higher trap densities than silicon devices, which considerably increases their time-dependent variability, resulting in stability and yield issues. Here, the stability of currently available 2D electronics is carefully evaluated using circuit simulations to determine the impact of transistor-related issues on the overall circuit performance. The results suggest that while the performance parameters of transistors based on certain material combinations are already getting close to being competitive with Si technologies, a reduction in variability and defect densities is required. Overall, the criteria for parameter variability serve as guidance for evaluating the future development of 2D technologies.
Collapse
Affiliation(s)
- Michael Waltl
- Christian Doppler Laboratory for Single-Defect Spectroscopy at the Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, Vienna, 1040, Austria
| | - Theresia Knobloch
- Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, Vienna, 1040, Austria
| | - Konstantinos Tselios
- Christian Doppler Laboratory for Single-Defect Spectroscopy at the Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, Vienna, 1040, Austria
| | - Lado Filipovic
- Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, Vienna, 1040, Austria
| | - Bernhard Stampfer
- Christian Doppler Laboratory for Single-Defect Spectroscopy at the Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, Vienna, 1040, Austria
| | - Yoanlys Hernandez
- Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, Vienna, 1040, Austria
| | - Dominic Waldhör
- Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, Vienna, 1040, Austria
| | - Yury Illarionov
- Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, Vienna, 1040, Austria
- Ioffe Institute, Polytechnicheskaya 26, St-Petersburg, 194021, Russia
| | - Ben Kaczer
- imec, Kapeldreef 75, Leuven, 3001, Belgium
| | - Tibor Grasser
- Institute for Microelectronics, TU Wien, Gusshausstrasse 27-29, Vienna, 1040, Austria
| |
Collapse
|
20
|
Schram T, Sutar S, Radu I, Asselberghs I. Challenges of Wafer-Scale Integration of 2D Semiconductors for High-Performance Transistor Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2109796. [PMID: 36071023 DOI: 10.1002/adma.202109796] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2021] [Revised: 07/01/2022] [Indexed: 06/15/2023]
Abstract
Large-area 2D-material-based devices may find applications as sensor or photonics devices or can be incorporated in the back end of line (BEOL) to provide additional functionality. The introduction of highly scaled 2D-based circuits for high-performance logic applications in production is projected to be implemented after the Si-sheet-based CFET devices. Here, a view on the requirements needed for full wafer integration of aggressively scaled 2D-based logic circuits, the status of developments, and the definition of the gaps to be bridged is provided. Today, typical test vehicles for 2D devices are single-sheet devices fully integrated in a lab environment, but transfer to a more scaled device in a fab environment has been demonstrated. This work reviews the status of the module development, including considerations for setting up fab-compatible process routes for single-sheet devices. While further development on key modules is still required, substantial progress is made for MX2 channel growth, high-k dielectric deposition, and contact engineering. Finally, the process requirements for building ultra-scaled stacked nanosheets are also reflected on.
Collapse
Affiliation(s)
- Tom Schram
- Imec, kapeldreef 75, Heverlee, B7001, Belgium
| | | | | | | |
Collapse
|
21
|
Wang Y, Li T, Li Y, Yang R, Zhang G. 2D-Materials-Based Wearable Biosensor Systems. BIOSENSORS 2022; 12:bios12110936. [PMID: 36354445 PMCID: PMC9687877 DOI: 10.3390/bios12110936] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Revised: 10/21/2022] [Accepted: 10/25/2022] [Indexed: 05/24/2023]
Abstract
As an evolutionary success in life science, wearable biosensor systems, which can monitor human health information and quantify vital signs in real time, have been actively studied. Research in wearable biosensor systems is mainly focused on the design of sensors with various flexible materials. Among them, 2D materials with excellent mechanical, optical, and electrical properties provide the expected characteristics to address the challenges of developing microminiaturized wearable biosensor systems. This review summarizes the recent research progresses in 2D-materials-based wearable biosensors including e-skin, contact lens sensors, and others. Then, we highlight the challenges of flexible power supply technologies for smart systems. The latest advances in biosensor systems involving wearable wristbands, diabetic patches, and smart contact lenses are also discussed. This review will enable a better understanding of the design principle of 2D biosensors, offering insights into innovative technologies for future biosensor systems toward their practical applications.
Collapse
Affiliation(s)
- Yi Wang
- School of Physics and Electronics, Hunan University, Changsha 410082, China
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Tong Li
- School of Physics and Electronics, Hunan University, Changsha 410082, China
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Yangfeng Li
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Rong Yang
- School of Physics and Electronics, Hunan University, Changsha 410082, China
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, China
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| |
Collapse
|
22
|
High-κ perovskite membranes as insulators for two-dimensional transistors. Nature 2022; 605:262-267. [PMID: 35546188 DOI: 10.1038/s41586-022-04588-2] [Citation(s) in RCA: 61] [Impact Index Per Article: 30.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2021] [Accepted: 02/28/2022] [Indexed: 11/09/2022]
Abstract
The scaling of silicon metal-oxide-semiconductor field-effect transistors has followed Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre technology nodes introduces issues such as leakage currents1. Two-dimensional (2D) layered semiconductors, with an atomic thickness that allows superior gate-field penetration, are of interest as channel materials for future transistors2,3. However, the integration of high-dielectric-constant (κ) materials with 2D materials, while scaling their capacitance equivalent thickness (CET), has proved challenging. Here we explore transferrable ultrahigh-κ single-crystalline perovskite strontium-titanium-oxide membranes as a gate dielectric for 2D field-effect transistors. Our perovskite membranes exhibit a desirable sub-one-nanometre CET with a low leakage current (less than 10-2 amperes per square centimetre at 2.5 megavolts per centimetre). We find that the van der Waals gap between strontium-titanium-oxide dielectrics and 2D semiconductors mitigates the unfavourable fringing-induced barrier-lowering effect resulting from the use of ultrahigh-κ dielectrics4. Typical short-channel transistors made of scalable molybdenum-disulfide films by chemical vapour deposition and strontium-titanium-oxide dielectrics exhibit steep subthreshold swings down to about 70 millivolts per decade and on/off current ratios up to 107, which matches the low-power specifications suggested by the latest International Roadmap for Devices and Systems5.
Collapse
|
23
|
Gong J, Adnani M, Jones BT, Xin Y, Wang S, Patel SV, Lochner E, Mattoussi H, Hu YY, Gao H. Nanoscale Encapsulation of Hybrid Perovskites Using Hybrid Atomic Layer Deposition. J Phys Chem Lett 2022; 13:4082-4089. [PMID: 35499488 DOI: 10.1021/acs.jpclett.2c00862] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Organic-inorganic hybrid perovskites have shown tremendous potential for optoelectronic applications. Ion migration within the crystal and across heterointerfaces, however, imposed severe problems with material degradation and performance loss in devices. Encapsulating hybrid perovskite with a thin physical barrier can be essential for suppressing the undesirable interfacial reactions without inhibiting the desirable transport of charge carriers. Here, we demonstrated that nanoscale, pinhole-free Al2O3 layer can be coated directly on the perovskite CH3NH3PbI3 using atomic layer deposition (ALD). The success can be attributed to a multitude of strategies including surface molecular modification and hybrid ALD processing combining the thermal and plasma-enhanced modes. The Al2O3 films provided remarkable protection to the underlying perovskite films, surviving by hours in solvents without noticeable decays in either structural or optical properties. The results advanced the understanding of applying ALD directly on hybrid perovskite and provided new opportunities to implement stable and high-performance devices based on the perovskites.
Collapse
Affiliation(s)
- Jue Gong
- Department of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Moein Adnani
- Department of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Brendon T Jones
- Department of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Yan Xin
- Condensed Matter Science, National High Magnetic Field Laboratory, Tallahassee, Florida 32310, United States
| | - Sisi Wang
- Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306, United States
| | - Sawankumar V Patel
- Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306, United States
| | - Eric Lochner
- Department of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Hedi Mattoussi
- Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306, United States
| | - Yan-Yan Hu
- Department of Chemistry and Biochemistry, Florida State University, Tallahassee, Florida 32306, United States
- Materials Science and Engineering Program, Florida State University, Tallahassee, Florida 32306, United States
| | - Hanwei Gao
- Department of Physics, Florida State University, Tallahassee, Florida 32306, United States
- Condensed Matter Science, National High Magnetic Field Laboratory, Tallahassee, Florida 32310, United States
- Materials Science and Engineering Program, Florida State University, Tallahassee, Florida 32306, United States
| |
Collapse
|
24
|
|
25
|
Osanloo MR, Van de Put ML, Saadat A, Vandenberghe WG. Identification of two-dimensional layered dielectrics from first principles. Nat Commun 2021; 12:5051. [PMID: 34413289 PMCID: PMC8376903 DOI: 10.1038/s41467-021-25310-2] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/21/2021] [Accepted: 08/02/2021] [Indexed: 02/07/2023] Open
Abstract
To realize effective van der Waals (vdW) transistors, vdW dielectrics are needed in addition to vdW channel materials. We study the dielectric properties of 32 exfoliable vdW materials using first principles methods. We calculate the static and optical dielectric constants and discover a large out-of-plane permittivity in GeClF, PbClF, LaOBr, and LaOCl, while the in-plane permittivity is high in BiOCl, PbClF, and TlF. To assess their potential as gate dielectrics, we calculate the band gap and electron affinity, and estimate the leakage current through the candidate dielectrics. We discover six monolayer dielectrics that promise to outperform bulk HfO2: HoOI, LaOBr, LaOCl, LaOI, SrI2, and YOBr with low leakage current and low equivalent oxide thickness. Of these, LaOBr and LaOCl are the most promising and our findings motivate the growth and exfoliation of rare-earth oxyhalides for their use as vdW dielectrics.
Collapse
Affiliation(s)
- Mehrdad Rostami Osanloo
- grid.267323.10000 0001 2151 7939Department of Physics, The University of Texas at Dallas, Richardson, TX USA
| | - Maarten L. Van de Put
- grid.267323.10000 0001 2151 7939Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX USA
| | - Ali Saadat
- grid.267323.10000 0001 2151 7939Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX USA
| | - William G. Vandenberghe
- grid.267323.10000 0001 2151 7939Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX USA
| |
Collapse
|
26
|
Hou X, Lin Q, Wei Y, Hao Q, Ni Z, Qiu T. Surface-Enhanced Raman Scattering Monitoring of Oxidation States in Defect-Engineered Two-Dimensional Transition Metal Dichalcogenides. J Phys Chem Lett 2020; 11:7981-7987. [PMID: 32886522 DOI: 10.1021/acs.jpclett.0c02318] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Recent studies have found that some transition metal dichalcogenides (TMDs) with their own defects are difficult to store in the air for a long time. Worse stability of TMDs under extreme conditions has also been reported. Therefore, monitoring the oxidation and degradation processes of TMDs can directly guide the stability prediction of TMD-based devices and monitor TMDs quality. Herein, with the case of molybdenum disulfide, UV-ozone defect engineering is used to simulate the oxidation and degradation of TMDs under severe conditions. Surface-enhanced Raman scattering based on a chemical mechanism was first introduced to the dynamic monitoring of defect evolution in the oxidation and degradation of TMDs, and succeeds in tracking the TMDs oxidation state by the quantitative method. It is expected that this technology can be extended to the quantification and tracking of oxidation and degradation of other 2D materials.
Collapse
Affiliation(s)
- Xiangyu Hou
- School of Physics, Southeast University, Nanjing, 211189, P.R. China
| | - Qian Lin
- School of Physics, Southeast University, Nanjing, 211189, P.R. China
| | - Yunjia Wei
- School of Physics, Southeast University, Nanjing, 211189, P.R. China
| | - Qi Hao
- School of Physics, Southeast University, Nanjing, 211189, P.R. China
| | - Zhenhua Ni
- School of Physics, Southeast University, Nanjing, 211189, P.R. China
| | - Teng Qiu
- School of Physics, Southeast University, Nanjing, 211189, P.R. China
| |
Collapse
|
27
|
Fathipour S, Paletti P, Fullerton-Shirey SK, Seabaugh AC. Electric-double-layer p-i-n junctions in WSe 2. Sci Rep 2020; 10:12890. [PMID: 32732940 PMCID: PMC7393156 DOI: 10.1038/s41598-020-69523-9] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/07/2020] [Accepted: 07/10/2020] [Indexed: 12/01/2022] Open
Abstract
While p-n homojunctions in two-dimensional transition metal dichalcogenide materials have been widely reported, few show an ideality factor that is constant over more than a decade in current. In this paper, electric double layer p-i-n junctions in WSe2 are shown with substantially constant ideality factors (2-3) over more than 3 orders of magnitude in current. These lateral junctions use the solid polymer, polyethylene oxide: cesium perchlorate (PEO:CsClO4), to induce degenerate electron and hole carrier densities at the device contacts to form the junction. These high carrier densities aid in reducing the contact resistance and enable the exponential current dependence on voltage to be measured at higher currents than prior reports. Transport measurements of these WSe2 p-i-n homojunctions in combination with COMSOL multiphysics simulations are used to quantify the ion distributions, the semiconductor charge distributions, and the simulated band diagram of these junctions, to allow applications to be more clearly considered.
Collapse
Affiliation(s)
- Sara Fathipour
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA
| | - Paolo Paletti
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA
| | - Susan K Fullerton-Shirey
- Department of Chemical and Petroleum Engineering, University of Pittsburgh, Pittsburgh, PA, 15213, USA
- Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, 15213, USA
| | - Alan C Seabaugh
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA.
| |
Collapse
|
28
|
Illarionov YY, Knobloch T, Jech M, Lanza M, Akinwande D, Vexler MI, Mueller T, Lemme MC, Fiori G, Schwierz F, Grasser T. Insulators for 2D nanoelectronics: the gap to bridge. Nat Commun 2020; 11:3385. [PMID: 32636377 PMCID: PMC7341854 DOI: 10.1038/s41467-020-16640-8] [Citation(s) in RCA: 111] [Impact Index Per Article: 27.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/24/2020] [Accepted: 05/15/2020] [Indexed: 12/02/2022] Open
Abstract
Nanoelectronic devices based on 2D materials are far from delivering their full theoretical performance potential due to the lack of scalable insulators. Amorphous oxides that work well in silicon technology have ill-defined interfaces with 2D materials and numerous defects, while 2D hexagonal boron nitride does not meet required dielectric specifications. The list of suitable alternative insulators is currently very limited. Thus, a radically different mindset with respect to suitable insulators for 2D technologies may be required. We review possible solution scenarios like the creation of clean interfaces, production of native oxides from 2D semiconductors and more intensive studies on crystalline insulators.
Collapse
Affiliation(s)
- Yury Yu Illarionov
- Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040, Vienna, Austria.
- Ioffe Physical-Technical Institute, Polytechnicheskaya 26, St-Petersburg, Russia, 194021.
| | - Theresia Knobloch
- Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040, Vienna, Austria
| | - Markus Jech
- Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040, Vienna, Austria
| | - Mario Lanza
- Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology, Soochow University, 199 Ren-Ai Road, Building 910, 215123, Suzhou, China
| | - Deji Akinwande
- The University of Texas at Austin, 10100 Burnet Rd. 160, Austin, TX, 78758, USA
| | - Mikhail I Vexler
- Ioffe Physical-Technical Institute, Polytechnicheskaya 26, St-Petersburg, Russia, 194021
| | - Thomas Mueller
- Institute for Photonics (TU Wien), Gusshausstrasse 27-29, 1040, Vienna, Austria
| | - Max C Lemme
- AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Otto-Blumenthal-Str. 25, 52074, Aachen, Germany
- Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074, Aachen, Germany
| | - Gianluca Fiori
- Dipartimento di Ingegneria dell'Informazione, Università di Pisa, 56122, Pisa, Italy
| | - Frank Schwierz
- Institute for Micro- and Nanoelectronics, Technical University Ilmenau, PF 100565, 98684, Ilmenau, Germany
| | - Tibor Grasser
- Institute for Microelectronics (TU Wien), Gusshausstrasse 27-29, 1040, Vienna, Austria.
| |
Collapse
|
29
|
Abstract
The severe corrosion accompanied with hydrogen evolution reaction has become the main obstacle restricting the utilization of zinc as an electrode in alkaline batteries. Al2O3 coating helps control the corrosion of zinc in alkaline solution. Herein, a stable Al2O3 coating is fabricated through facile electrospinning from Al(NO3)3 as an efficient anti-corrosion film on zinc. The electrospinning technique facilitates uniform dispersion of Al2O3 particles, therefore the corrosion inhibition efficiency could be up to 88.5% in this work. The Al2O3 coating prevents direct contact between zinc and the alkaline solution and minimize hydrogen evolution. Further, the effects of the thickness of Al2O3 coating on corrosion behavior of zinc are investigated through hydrogen evolution reaction, Tafel polarization, and impedance test. The results show that the thicker Al2O3 coating possessed better corrosion inhibition efficiency due to the higher corrosion resistance and lower porosity. The 18 μm Al2O3 coating on zinc provides corrosion current density of 60.6 mA/cm2, while the bare zinc substrate delivers as much as 526.3 mA/cm2.This study presents a promising approach for fabricating Al2O3 coating for corrosion-resistant applications.
Collapse
|
30
|
Lee KN, Bang S, Duong NT, Yun SJ, Park DY, Lee J, Choi YC, Jeong MS. Encapsulation of a Monolayer WSe 2 Phototransistor with Hydrothermally Grown ZnO Nanorods. ACS APPLIED MATERIALS & INTERFACES 2019; 11:20257-20264. [PMID: 31074258 DOI: 10.1021/acsami.9b03508] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Transition metal dichalcogenides (TMDCs) are promising two-dimensional (2D) materials for realizing next-generation electronics and optoelectronics with attractive physical properties. However, monolayer TMDCs (1LTMDCs) have various serious issues, such as instability under ambient conditions and low optical quantum yield from their extremely thin thickness of ∼0.7 nm. To overcome these issues, we constructed a hybrid structure (HS) by growing zinc oxide nanorods (ZnO NRs) on a monolayer tungsten diselenide (1LWSe2) using the hydrothermal method. Consequently, we confirmed not only enhanced photoluminescence of 1LWSe2 but also improved optoelectronic properties by fabricating the HS phototransistor. Through various investigations, we found that these phenomena were due to the antenna and p-type doping effects attributed to the ZnO NRs. In addition, we verified that the optoelectronic properties of 1LTMDCs are maintained for 2 weeks in ambient condition through the sustainable encapsulation effect induced by our HS. This encapsulation method with inorganic materials is expected to be applied to improve the stability and performance of various emerging 2D material-based devices.
Collapse
Affiliation(s)
- Kang-Nyeoung Lee
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- Korea Institute of Carbon Convergence Technology , Jeonju 54853 , Republic of Korea
| | - Seungho Bang
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- Center for Integrated Nanostructure Physics , Institute for Basic Science , Suwon 16419 , Republic of Korea
| | - Ngoc Thanh Duong
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Seok Joon Yun
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- Center for Integrated Nanostructure Physics , Institute for Basic Science , Suwon 16419 , Republic of Korea
| | - Dae Young Park
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- Center for Integrated Nanostructure Physics , Institute for Basic Science , Suwon 16419 , Republic of Korea
| | - Juchan Lee
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
| | - Young Chul Choi
- Korea Institute of Carbon Convergence Technology , Jeonju 54853 , Republic of Korea
| | - Mun Seok Jeong
- Department of Energy Science , Sungkyunkwan University , Suwon 16419 , Republic of Korea
- Center for Integrated Nanostructure Physics , Institute for Basic Science , Suwon 16419 , Republic of Korea
| |
Collapse
|
31
|
Lai S, Byeon S, Jang SK, Lee J, Lee BH, Park JH, Kim YH, Lee S. HfO 2/HfS 2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS 2. NANOSCALE 2018; 10:18758-18766. [PMID: 30276384 DOI: 10.1039/c8nr06020g] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
While preparing uniform dielectric layers on two-dimensional (2D) materials is a key device architecture requirement to achieve next-generation 2D devices, conventional deposition or transfer approaches have been so far limited by their high cost, fabrication complexity, and especially poor dielectric/2D material interface quality. Here, we demonstrate that HfO2, a high-K dielectric, can be prepared on the top surface of 2D HfS2 through plasma oxidation, which results in a heterostructure composed of a 2D van der Waals semiconductor and its insulating native oxide. A highly uniform dielectric layer with a controlled thickness can be prepared; the possibility of unlimited layer-by-layer oxidation further differentiates our work from previous attempts on other 2D semiconducting materials, which exhibit self-limited oxidation up to only a few layers. High resolution transmission electron microscopy was used to show that the converted HfO2/HfS2 hybrid structure is of high quality with an atomically abrupt, impurity- and defect-free interface. Density functional theory calculations show that the unlimited layer-by-layer oxidation occurs because oxygen atoms can barrierlessly penetrate into the HfS2 surface and the extracted sulfur atoms are absorbed into the oxygen vacancy sites within HfO2 under O-rich conditions. A top-gated field-effect transistor fabricated with the converted HfO2/HfS2 hybrid structure was found to exhibit a low interface trap density Dit of 6 × 1011 cm-2 eV-1 between the HfS2 channel and the converted HfO2 dielectric, and a high on/off current ratio above 107. Our approach provides a low cost, simple, and ultraclean manufacturing technique for integrating 2D material into device applications.
Collapse
Affiliation(s)
- Shen Lai
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon 440-746, Korea.
| | | | | | | | | | | | | | | |
Collapse
|
32
|
Lim YF, Priyadarshi K, Bussolotti F, Gogoi PK, Cui X, Yang M, Pan J, Tong SW, Wang S, Pennycook SJ, Goh KEJ, Wee ATS, Wong SL, Chi D. Modification of Vapor Phase Concentrations in MoS 2 Growth Using a NiO Foam Barrier. ACS NANO 2018; 12:1339-1349. [PMID: 29338197 DOI: 10.1021/acsnano.7b07682] [Citation(s) in RCA: 36] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Single-layer molybdenum disulfide (MoS2) has attracted significant attention due to its electronic and physical properties, with much effort invested toward obtaining large-area high-quality monolayer MoS2 films. In this work, we demonstrate a reactive-barrier-based approach to achieve growth of highly homogeneous single-layer MoS2 on sapphire by the use of a nickel oxide foam barrier during chemical vapor deposition. Due to the reactivity of the NiO barrier with MoO3, the concentration of precursors reaching the substrate and thus nucleation density is effectively reduced, allowing grain sizes of up to 170 μm and continuous monolayers on the centimeter length scale being obtained. The quality of the monolayer is further revealed by angle-resolved photoemission spectroscopy measurement by observation of a very well resolved electronic band structure and spin-orbit splitting of the bands at room temperature with only two major domain orientations, indicating the successful growth of a highly crystalline and well-oriented MoS2 monolayer.
Collapse
Affiliation(s)
- Yee-Fun Lim
- Institute of Materials Research and Engineering, Agency for Science Technology and Research , 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634
| | - Kumar Priyadarshi
- Institute of Materials Research and Engineering, Agency for Science Technology and Research , 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634
- Indian Institute of Science Education and Research , Dr. Homi Bhabha Road, Pashan Pune 411008, India
| | - Fabio Bussolotti
- Institute of Materials Research and Engineering, Agency for Science Technology and Research , 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634
| | - Pranjal Kumar Gogoi
- Department of Physics, National University of Singapore , 2 Science Drive 3, Singapore 117542
| | - Xiaoyang Cui
- Institute of Materials Research and Engineering, Agency for Science Technology and Research , 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634
| | - Ming Yang
- Institute of Materials Research and Engineering, Agency for Science Technology and Research , 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634
| | - Jisheng Pan
- Institute of Materials Research and Engineering, Agency for Science Technology and Research , 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634
| | - Shi Wun Tong
- Institute of Materials Research and Engineering, Agency for Science Technology and Research , 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634
| | - Shijie Wang
- Institute of Materials Research and Engineering, Agency for Science Technology and Research , 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634
| | - Stephen J Pennycook
- Department of Materials Science & Engineering, National University of Singapore , 9 Engineering Drive 1, Singapore 117575
| | - Kuan Eng Johnson Goh
- Institute of Materials Research and Engineering, Agency for Science Technology and Research , 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634
- Department of Physics, National University of Singapore , 2 Science Drive 3, Singapore 117542
| | - Andrew T S Wee
- Department of Physics, National University of Singapore , 2 Science Drive 3, Singapore 117542
| | - Swee Liang Wong
- Institute of Materials Research and Engineering, Agency for Science Technology and Research , 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634
- Department of Physics, National University of Singapore , 2 Science Drive 3, Singapore 117542
| | - Dongzhi Chi
- Institute of Materials Research and Engineering, Agency for Science Technology and Research , 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634
| |
Collapse
|
33
|
Ko S, Na J, Moon YS, Zschieschang U, Acharya R, Klauk H, Kim GT, Burghard M, Kern K. Few-Layer WSe 2 Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping. ACS APPLIED MATERIALS & INTERFACES 2017; 9:42912-42918. [PMID: 29200255 DOI: 10.1021/acsami.7b13395] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al2O3 layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W-1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials.
Collapse
Affiliation(s)
- Seungpil Ko
- School of Electrical Engineering, Korea University , 136-701 Seoul, Republic of Korea
| | - Junhong Na
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Young-Sun Moon
- School of Electrical Engineering, Korea University , 136-701 Seoul, Republic of Korea
| | - Ute Zschieschang
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Rachana Acharya
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Hagen Klauk
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Gyu-Tae Kim
- School of Electrical Engineering, Korea University , 136-701 Seoul, Republic of Korea
| | - Marko Burghard
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
| | - Klaus Kern
- Max-Planck-Institute for Solid State Research , Heisenbergstrasse 1, D-70569 Stuttgart, Germany
- Institut de Physique, École Polytechnique Fédérale de Lausanne , CH-1015 Lausanne, Switzerland
| |
Collapse
|
34
|
Pudasaini PR, Stanford MG, Oyedele A, Wong AT, Hoffman AN, Briggs DP, Xiao K, Mandrus DG, Ward TZ, Rack PD. High performance top-gated multilayer WSe 2 field effect transistors. NANOTECHNOLOGY 2017; 28:475202. [PMID: 28718775 DOI: 10.1088/1361-6528/aa8081] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
In this paper, high performance top-gated WSe2 field effect transistor (FET) devices are demonstrated via a two-step remote plasma assisted ALD process. High-quality, low-leakage aluminum oxide (Al2O3) gate dielectric layers are deposited onto the WSe2 channel using a remote plasma assisted ALD process with an ultrathin (∼1 nm) titanium buffer layer. The first few nanometers (∼2 nm) of the Al2O3 dielectric film is deposited at relatively low temperature (i.e. 50 °C) and remainder of the film is deposited at 150 °C to ensure the conformal coating of Al2O3 on the WSe2 surface. Additionally, an ultra-thin titanium buffer layer is introduced at the WSe2 channel surface prior to ALD process to mitigate oxygen plasma induced doping effects. Excellent device characteristics with current on-off ratio in excess of 106 and a field effect mobility as high as 70.1 cm2 V-1 s-1 are achieved in a few-layer WSe2 FET device with a 30 nm Al2O3 top-gate dielectric. With further investigation and careful optimization, this method can play an important role for the realization of high performance top gated FETs for future optoelectronic device applications.
Collapse
Affiliation(s)
- Pushpa Raj Pudasaini
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, United States of America
| | | | | | | | | | | | | | | | | | | |
Collapse
|
35
|
Cheng L, Lee J, Zhu H, Ravichandran AV, Wang Q, Lucero AT, Kim MJ, Wallace RM, Colombo L, Kim J. Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS 2 for Two-Dimensional Material-Based Devices. ACS NANO 2017; 11:10243-10252. [PMID: 28832118 DOI: 10.1021/acsnano.7b04813] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The successful realization of high-performance 2D-materials-based nanoelectronics requires integration of high-quality dielectric films as a gate insulator. In this work, we explore the integration of organic and inorganic hybrid dielectrics on MoS2 and study the chemical and electrical properties of these hybrid films. Our atomic force microscopy, X-ray photoelectron spectroscopy (XPS), Raman, and photoluminescence results show that, aside from the excellent film uniformity and thickness scalability down to 2.5 nm, the molecular layer deposition of octenyltrichlorosilane (OTS) and Al2O3 hybrid films preserves the chemical and structural integrity of the MoS2 surface. The XPS band alignment analysis and electrical characterization reveal that through the inclusion of an organic layer in the dielectric film, the band gap and dielectric constant can be tuned from ∼7.00 to 6.09 eV and ∼9.0 to 4.5, respectively. Furthermore, the hybrid films show promising dielectric properties, including a high breakdown field of ∼7.8 MV/cm, a low leakage current density of ∼1 × 10-6 A/cm2 at 1 MV/cm, a small hysteresis of ∼50 mV, and a top-gate subthreshold voltage swing of ∼79 mV/dec. Our experimental findings provide a facile way of fabricating scalable hybrid gate dielectrics on transition metal dichalcogenides for 2D-material-based flexible electronics applications.
Collapse
Affiliation(s)
- Lanxia Cheng
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Jaebeom Lee
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Hui Zhu
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Arul Vigneswar Ravichandran
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Qingxiao Wang
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Antonio T Lucero
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Moon J Kim
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Robert M Wallace
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| | - Luigi Colombo
- Texas Instruments , Dallas, Texas 75243, United States
| | - Jiyoung Kim
- Department of Materials Science and Engineering, The University of Texas at Dallas , Richardson, Texas 75080, United States
| |
Collapse
|
36
|
Price KM, Schauble KE, McGuire FA, Farmer DB, Franklin AD. Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS 2 Using Plasma-Enhanced Atomic Layer Deposition. ACS APPLIED MATERIALS & INTERFACES 2017; 9:23072-23080. [PMID: 28653822 DOI: 10.1021/acsami.7b00538] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Regardless of the application, MoS2 requires encapsulation or passivation with a high-quality dielectric, whether as an integral aspect of the device (as with top-gated field-effect transistors (FETs)) or for protection from ambient conditions. However, the chemically inert surface of MoS2 prevents uniform growth of a dielectric film using atomic layer deposition (ALD)-the most controlled synthesis technique. In this work, we show that a plasma-enhanced ALD (PEALD) process, compared to traditional thermal ALD, substantially improves nucleation on MoS2 without hampering its electrical performance, and enables uniform growth of high-κ dielectrics to sub-5 nm thicknesses. Substrate-gated MoS2 FETs were studied before/after ALD and PEALD of Al2O3 and HfO2, indicating the impact of various growth conditions on MoS2 properties, with PEALD of HfO2 proving to be most favorable. Top-gated FETs with high-κ films as thin as ∼3.5 nm yielded robust performance with low leakage current and strong gate control. Mechanisms for the dramatic nucleation improvement and impact of PEALD on the MoS2 crystal structure were explored by X-ray photoelectron spectroscopy (XPS). In addition to providing a detailed analysis of the benefits of PEALD versus ALD on MoS2, this work reveals a straightforward approach for realizing ultrathin films of device-quality high-κ dielectrics on 2D crystals without the use of additional nucleation layers or damage to the electrical performance.
Collapse
Affiliation(s)
- Katherine M Price
- Department of Electrical and Computer Engineering, Duke University , Durham, North Carolina 27708, United States
| | - Kirstin E Schauble
- Department of Electrical and Computer Engineering, Seattle University , Seattle, Washington 98122, United States
| | - Felicia A McGuire
- Department of Electrical and Computer Engineering, Duke University , Durham, North Carolina 27708, United States
| | - Damon B Farmer
- IBM T. J. Watson Research Center , Yorktown Heights, New York 10598, United States
| | - Aaron D Franklin
- Department of Electrical and Computer Engineering, Duke University , Durham, North Carolina 27708, United States
- Department of Chemistry, Duke University , Durham, North Carolina 27708, United States
| |
Collapse
|