Infrared Quantum Dots: Progress, Challenges, and Opportunities

Synergism in Binary Nanocrystals Enables Top-Illuminated HgTe Colloidal Quantum Dot Short-Wave Infrared Imager

Thanks to their tunable infrared absorption, solution processability, and low fabrication costs, HgTe colloidal quantum dots (CQDs) are promising for optoelectronic devices. Despite advancements in device design, their potential for imaging applications remains underexplored. For integration with Si-based readout integrated circuits (ROICs), top illumination is necessary for simultaneous light absorption and signal acquisition. However, most high-performing traditional HgTe CQD photodiodes are p-on-n stack and bottom-illuminated. Herein, we report top-illuminated inverted n-on-p HgTe CQD photodiodes using a robust p-type CQD layer and a thermally evaporated Bi2S3 electron transport layer. The p-type CQD solid is achieved by exploring the synergism in binary HgTe and Ag2Te CQDs. These photodetectors show a room-temperature detectivity of 3.4 × 1011 jones and an EQE of ∼44% at ∼1.7 μm wavelength, comparable to the p-on-n HgTe CQD photodiodes. A top-illuminated HgTe CQD short-wave infrared imager (640 × 512 pixels) was fabricated, demonstrating successful infrared imaging.

Quantum Dot-Based Three-Stack Tandem Near-Infrared-to-Visible Optoelectric Upconversion Devices

Quantum dots (QDs) exhibit size-tunable optical properties, making them suitable for efficient light-sensing and light-emitting devices. Tandem devices that can convert near-infrared (NIR) to visible (Vis) signals can be fabricated by integrating an NIR-sensing QD device with a Vis electroluminescence (EL) QD device. However, these devices require delicate control of the QD layer during processing to prevent damage to the predeposited QD layers in tandem devices during the subsequent deposition of other functional layers. This has restricted attainable device structures for QD-based upconversion devices. Herein, we present a modular approach for fabricating QD-based optoelectric upconversion devices. This approach involves using NIR QD-absorbing (Abs) and Vis QD-EL units as building modules, both of which feature cross-linked functional layers that exhibit structural tolerance to dissolution during subsequent solution-based processes. Tandem devices are fabricated in both normal (EL unit on Abs unit) and inverted (Abs unit on EL unit) structures using the same set of NIR QD-Abs and Vis QD-EL units stacked in opposite sequences. The tandem device in the normal structure exhibits a high NIR photon-to-Vis-photon conversion efficiency of up to 1.9% in a practical transmissive mode. By extending our modular approach, we also demonstrate a three-stack tandem device that incorporates a single NIR-absorbing unit coupled with two EL units, achieving an even higher conversion efficiency of up to 3.2%.

Recent Progress on Second Near-Infrared Emitting Carbon Dots in Biomedicine

Second near-infrared (NIR-II) carbon dots, with absorption or emission between 1000 and 1700 nm, are gaining increasing attention in the biomaterial field due to their distinctive properties, which include straightforward preparation processes, stable photophysical characteristics, excellent biocompatibility, and low cost. As a result, there is a growing focus on the controlled synthesis and modulation of the photochemical and photophysical properties of NIR-II carbon dots, with the aim to further expand their biomedical applications, a current research hotspot. This account aims to provide a comprehensive overview of the recent advancements in NIR-II carbon dots within the biomedical field. The review will cover the following topics: (i) the design, synthesis, and purification of NIR-II carbon dots, (ii) the surface modification strategies, and (iii) the biomedical applications, particularly in the domain of cancer theranostics. Additionally, this account addresses the challenges encountered by NIR-II carbon dots and will outline future directions in the realm of cancer theranostics. By exploring carbon-based NIR-II biomaterials, we can anticipate that this contribution will garner increased attention and contribute to the development of next-generation advanced functional carbon dots, thereby offering enhanced tools and strategies in the biomedical field.

Infrared Imaging Using Thermally Stable HgTe/CdS Nanocrystals

Transferring nanocrystals (NCs) from the laboratory environment toward practical applications has raised new challenges. HgTe appears as the most spectrally tunable infrared colloidal platform. Its low-temperature synthesis reduces the growth energy cost yet also favors sintering. Once coupled to a read-out circuit, the Joule effect aggregates the particles, leading to a poorly defined optical edge and large dark current. Here, we demonstrate that CdS shells bring the expected thermal stability (no redshift upon annealing, reduced tendency to form amalgams, and preservation of photoconduction after an atomic layer deposition process). The electronic structure of these confined particles is unveiled using k.p self-consistent simulations showing a significant exciton binding energy of ∼200 meV. After shelling, the material displays a p-type behavior that favors the generation of photoconductive gain. The latter is then used to increase the external quantum efficiency of an infrared imager, which now reaches 40% while presenting long-term stability.

Probing the Critical Role of Interfaces for Superior Performance in PbS Quantum Dot/Graphene Nanohybrid Broadband Photodetectors

Colloidal quantum dots/graphene (QD/Gr) nanohybrids have been studied intensively for photodetection in a broadband spectrum including ultraviolet, visible, near-infrared, and shortwave infrared (UV-vis-NIR-SWIR). Since the optoelectronic process in the QD/Gr nanohybrid relies on the photogenerated charge carrier transfer from QDs to graphene, understanding the role of the QD-QD and QD-Gr interfaces is imperative to the QD/Gr nanohybrid photodetection. Herein, a systematic study is carried out to probe the effect of these interfaces on the noise, photoresponse, and specific detectivity in the UV-vis-NIR-SWIR spectrum. Interestingly, the photoresponse has been found to be negligible without a 3-mercaptopropionic acid (MPA) ligand exchange, moderate with a single ligand exchange after all QD layers are deposited on graphene, and maximum if it is performed after each QD layer deposition up to five layers of total QD thickness of 260-280 nm. Furthermore, exposure of graphene to C-band UV (UVC) for a short period of 4-5 min before QD deposition leads to improved photoresponse via removal of polar molecules at the QD/Gr interface. With the combination of the MPA ligand exchange and UVC exposure, optimal optoelectronic properties can be obtained on the PbS QD/Gr nanohybrids with high specific detectivity up to 2.6 × 1011, 1.5 × 1011, 5 × 1010, and 1.9 × 109 Jones at 400, 550, 1000, and 1700 nm, respectively, making the nanohybrids promising for broadband photodetection.

Understanding the Growth Mechanism of HgTe Colloidal Quantum Dots through Bilateral Injection

As potential low-cost alternatives of traditional bulk HgCdTe crystals, HgTe colloidal quantum dots (CQDs) synthesized through reactions between HgCl2 and trioctylphosphine-telluride in hot oleylamine have shown promising performances in mid-wave infrared photodetectors. Tetrapodic or tetrahedral HgTe CQDs have been obtained by tuning the reaction conditions such as temperature, reaction time, concentrations, and ratios of the two precursors. However, the principles governing the growth dynamics and the mechanism behind the transitions between tetrapodic and tetrahedral HgTe CQDs have not been sufficiently understood. In this work, synthesis of HgTe CQDs through bilateral injection is introduced to study the growth mechanism. It suggests that tetrahedral HgTe CQDs usually result from the breaks of tetrapodic HgTe CQDs after their legs grow thick enough. The fundamental factor determining whether the growth makes their legs longer or thicker is the effective concentration of the Te precursor during the growth, rather than temperature, Hg-rich environment, or reactivity of precursors. A chemical model is proposed to illustrate the principles governing the growth dynamics, which provides valuable guidelines for tuning the material properties of HgTe CQDs according to the needs of applications.

In Vivo High-Contrast Biomedical Imaging in the Second Near-Infrared Window Using Ultrabright Rare-Earth Nanoparticles

Intravital luminescence imaging in the second near-infrared window (NIR-II) enables noninvasive deep-tissue imaging with high spatiotemporal resolution of live mammals because of the properties of suppressed light scattering and diminished autofluorescence in the long-wavelength region. Herein, we present the synthesis of a downconversion luminescence rare-earth nanocrystal with a core-shell-shell structure (NaYF4@NaYbF4:Er,Ce@NaYF4:Ca). The structure efficiently maximized the doping concentration of the sensitizers and increased Er3+ luminescence while preventing cross relaxation. Furthermore, Ce3+ doping in the middle layer efficiently limited the upconversion pathway and increased downconversion by 24-fold to produce bright 1550 nm luminescence under 975 nm excitation. Finally, optimizing the inert shell coating of NaYF4:Ca and liposome encapsulation reduced the luminescence quenching impact by water and improved biological metabolism. Thus, our synthesized biocompatible, ultrabright NIR-II probes provide high contrast and resolution for through-scalp and through-skull luminescence imaging of mice cerebral vasculature without craniotomy as well as imaging of mouse hindlimb microvessels.

Understanding Colloidal Quantum Dot Device Characteristics with a Physical Model

Colloidal quantum dots (CQDs) are finding increasing applications in optoelectronic devices, such as photodetectors and solar cells, because of their high material quality, unique and attractive properties, and process flexibility without the constraints of lattice match and thermal budget. However, there is no adequate device model for colloidal quantum dot heterojunctions, and the popular Shockley-Quiesser diode model does not capture the underlying physics of CQD junctions. Here, we develop a compact, easy-to-use model for CQD devices rooted in physics. We show how quantum dot properties, QD ligand binding, and the heterointerface between quantum dots and the electron transport layer (ETL) affect device behaviors. We also show that the model can be simplified to a Shockley-like equation with analytical approximate expressions for reverse saturation current, ideality factor, and quantum efficiency. Our model agrees well with the experiment and can be used to describe and optimize CQD device performance.

Interface-Mediation-Enabled High-Performance Near-Infrared AgAuSe Quantum Dot Light-Emitting Diodes

Near-infrared (NIR) quantum dot (QD) light-emitting diodes (LEDs) (NIR-QLEDs) for recognition and tracking applications underpin the future of night-vision technology. However, the performance of environmentally benign materials and devices has lagged far behind that of their Pb-containing counterparts. In this study, we demonstrate the superior performance of NIR-QLEDs based on efficient AgAuSe QDs with contact interface mediation. Consequently, we reveal that using cysteamine-treated QD film contact heterointerfaces can effectively eliminate contact defects in devices and preserve their excellent emissive properties. Additionally, the dipole moment orientation of the coordinated additives is inverse of the heterojunction potential difference, simultaneously blocking electrons and enhancing hole injection in operando, optimizing the LED charge injection balance. These devices exhibit a high external quantum efficiency (EQE) and a power conversion efficiency (PCE) of 15.8 and 12.7% at 1046 nm, respectively, a sub-band gap turn-on voltage of 0.9 V, and a low current density (over 10% of the EQE from 0.0017 to 0.31 mA cm-2). These are the highest EQE and PCE values ever reported for environmentally benign NIR-QLEDs. The results of this study can provide a general strategy for the practical application of QDs in electroluminescent devices.

Halide Ions Regulating the Morphologies of PbS and Au@PbS Core-Shell Nanocrystals: Synthesis, Self-Assembly, and Electrical Transport Properties

The geometry and surface state of nanocrystals (NCs) strongly affect their physiochemical properties, self-assembly behaviors, and potential applications, but there is still a lack of a facile method to regulate the exposed facets of the NCs, especially metal@semiconductor core-shell NCs. Herein, we present a reproducible approach for tuning the morphology of PbS NCs from nanocubes to nano-octahedrons by introducing lead halides as precursors. Excitingly, the method can be easily extended to the synthesis of metal@PbS core-shell NCs with single-crystalline shells and specific exposed facets. In addition, the halide passivation layers on the NCs are found to greatly improve their antioxidant ability. Therefore, the Cl-passivated NCs can self-assemble into atomic-coupled monolayer films via oriented attachment under ambient conditions, which exhibit enhanced electrical conductivities compared with uncoupled counterparts. The precise synthesis of nanocrystals with tunable shapes and the construction of self-assembled films provide a way to expand their application in high-performance optoelectronic devices.

Self-Precipitation of Highly Purified Red Emitting Carbon Dots as Red Phosphors

Colloidal carbon dots (C-dots) have attracted a great deal of attention for their unique optical properties. However, it is still a challenge to obtain highly purified C-dots without using multiple-step purification or postsize selection. In this work, a self-precipitation hydrothermal reaction was used to synthesize red-emitting C-dots (R-C-dots) using o-phenylenediamine (o-PDA) as a precursor without using any catalyst. The R-C-dots are able to precipitate on the wall of the reactor, which enables us to obtain solid-state C-dots with high purity. The R-C-dots have a photoluminescence quantum yield (PLQY) of as high as 36.75%, which is among the highest PLQY values reported previously for R-C-dots without using catalysts. The transient PL and transient absorption spectra revealed that 5,14-dihydroquinoxalino[2,3-b]phenazine linked on the surface of the C-dots determined the red luminescence behavior. This work provides a new path for the controllable synthesis of high-purity R-C-dots, showing potential applications in optoelectronic devices.

Rigid and Photostable Shortwave Infrared Dye Absorbing/Emitting beyond 1200 nm for High-Contrast Multiplexed Imaging

The shortwave infrared (SWIR) spectral region beyond 1200 nm offers optimal tissue penetration depth and has broad potential in diagnosis, therapy, and surgery. Here, we devised a novel class of fluorochromic scaffold, i.e., a tetra-benzannulated xanthenoid (EC7). EC7 absorbs/emits maximally at 1204/1290 nm in CH₂Cl₂ and exhibits an unparalleled molar absorptivity of 3.91 × 10⁵ cm^-1 M^-1 and high transparency to light at 400-900 nm. It also exhibited high resistance toward both photobleaching and symmetry breaking due to its unique structural rigidity. It is feasible for in vivo bioimaging and particularly suitable to couple with the shorter-wavelength analogues for high-contrast multiplexing. High-contrast dual-channel intraoperative imaging of the hepatobiliary system and three-channel in vivo imaging of the intestine, the stomach, and the vasculature were showcased. EC7 is a benchmark fluorochrome for facile biomedical exploitation of the SWIR region beyond 1200 nm.

Generation of entangled-photons by a quantum dot cascade source in polarized cavities: Using cavity resonances to boost signals and preserve the entanglements

Motivated by recent advances in the development of single photon emitters for quantum information sciences, here we design and formulate a quantum cascade model that describes cascade emission by a quantum dot (QD) in a cavity structure while preserving entanglement that stores information needed for single photon emission. The theoretical approach is based on a photonic structure that consists of two orthogonal cavities in which resonance with either the first or second of the two emitted photons is possible, leading to amplification and rerouting of the entangled light. The cavity-QD scheme uses a four-level cascade emitter that involves three levels for each polarization, leading to two spatially entangled photons for each polarization. By solving the Schrodinger equation, we identify the characteristic properties of the system, which can be used in conjunction with optimization techniques to achieve the "best" design relative to a set of prioritized criteria or constraints in our optical system. The theoretical investigations include an analysis of emission spectra in addition to the joint spectral density profile, and the results demonstrate the ability of the cavities to act as frequency filters for the photons that make up the entanglements and to modify entanglement properties. The results provide new opportunities for the experimental design and engineering of on-demand single photon sources.

Lithium-Ion Glass Gating of HgTe Nanocrystal Film with Designed Light-Matter Coupling

Nanocrystals' (NCs) band gap can be easily tuned over the infrared range, making them appealing for the design of cost-effective sensors. Though their growth has reached a high level of maturity, their doping remains a poorly controlled parameter, raising the need for post-synthesis tuning strategies. As a result, phototransistor device geometry offers an interesting alternative to photoconductors, allowing carrier density control. Phototransistors based on NCs that target integrated infrared sensing have to (i) be compatible with low-temperature operation, (ii) avoid liquid handling, and (iii) enable large carrier density tuning. These constraints drive the search for innovative gate technologies beyond traditional dielectric or conventional liquid and ion gel electrolytes. Here, we explore lithium-ion glass gating and apply it to channels made of HgTe narrow band gap NCs. We demonstrate that this all-solid gate strategy is compatible with large capacitance up to 2 µF·cm^-2 and can be operated over a broad range of temperatures (130-300 K). Finally, we tackle an issue often faced by NC-based phototransistors:their low absorption; from a metallic grating structure, we combined two resonances and achieved high responsivity (10 A·W^-1 or an external quantum efficiency of 500%) over a broadband spectral range.

Highly Responsive Mid-Infrared Metamaterial Enhanced Heterostructure Photodetector Formed out of Sintered PbSe/PbS Colloidal Quantum Dots

Efficient and simple-to-fabricate light detectors in the mid infrared (MIR) spectral range are of great importance for various applications in existing and emerging technologies. Here, we demonstrate compact and efficient photodetectors operating at room temperature in a wavelength range of 2710-4250 nm with responsivities as high as 375 and 4 A/W. Key to the high performance is the combination of a sintered colloidal quantum dot (CQD) lead selenide (PbSe) and lead sulfide (PbS) heterojunction photoconductor with a metallic metasurface perfect absorber. The combination of this photoconductor stack with the metallic metasurface perfect absorber provides an overall ∼20-fold increase of the responsivity compared against reference sintered PbSe photoconductors. More precisely, the introduction of a PbSe/PbS heterojunction increases the responsivity by a factor of ∼2 and the metallic metasurface enhances the responsivity by an order of magnitude. The metasurface not only enhances the light-matter interaction but also acts as an electrode to the detector. Furthermore, fabrication of our devices relies on simple and inexpensive methods. This is in contrast to most of the currently available (state-of-the-art) MIR photodetectors that rely on rather expensive as well as nontrivial fabrication technologies that often require cooling for efficient operation.

Scaling infrared detectors-status and outlook

The predicted 'Law 19' benchmark for HgCdTe photodiode performance established in 2019 is a milestone in the development of infrared (IR) detectors and make the dream of Elliott and colleagues, who in 1999 wrote thatthere is no fundamental obstacle to obtaining room temperature operation of photon detectors at room temperature with background-limited performance even in reduced fields of view(Elliottet al1999Appl. Phys. Lett.742881). This circumstance will make it possible to achieve in the near future the room-temperature IR arrays operation with high pixel density (small pixels) fully compatible with the background and diffraction-limited performance resulting from the system optics. The advent of smaller pixels also results in superior spatial and temperature resolutions of imaging systems. In megapixel imaging systems, the pixel dimension plays a crucial role in determining critical system attributes such as system size, weight, and power consumption. In the paper, the physical limitations of pixel size related to the aperture of the optics, which in turn is wavelength dependent, are described. Since the critical parameter of small pixels is quantum efficiency, more attention has been paid to enhancing the coupling of radiation to the detector. Then, the evaluation for assessing the figure-of-merit of different material systems (especially short wavelength IR colloidal quantum dots, both medium and long wavelength IR novel III-V material systems) relative to bulk HgCdTe alloys is considered. Of the various thermal detectors, particular attention has been focussed on bolometer arrays due to their largest share of the global commercial market. Also key challenges in realizing ultimate pixel dimensions in focal plane arrays design are presented for different material systems including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity.

Near-Infrared Light-Emitting Diodes Based on RoHS-Compliant InAs/ZnSe Colloidal Quantum Dots

We demonstrate efficient, stable, and fully RoHS-compliant near-infrared (NIR) light-emitting diodes (LEDs) based on InAs/ZnSe quantum dots (QDs) synthesized by employing a commercially available amino-As precursor. They have a record external quantum efficiency of 5.5% at 947 nm and an operational lifetime of ∼32 h before reaching 50% of their initial luminance. Our findings offer a new solution for developing RoHS-compliant light-emitting technologies based on Pb-free colloidal QDs.

Elucidating the Gain Mechanism in PbS Colloidal Quantum Dot Visible-Near-Infrared Photodiodes

The responsivities of colloidal quantum dot (CQD) photodiodes are not satisfactory (∼0.3 A W^-1) due to the lack of gain. Here, visible-near-infrared PbS CQD photodiodes with a peak responsivity of ∼1 A W^-1 and external quantum efficiencies larger than 100% are demonstrated. The gain is realized by electron tunneling injection through the Schottky junction (PbS-EDT/Au) with barrier height reduced to 0.27 eV, originating from the capture of photogenerated holes at the negatively charged acceptor traps generated in the oxidized hole-transport layer PbS-EDT. The resulting device exhibits a peak detectivity of ∼8 × 10¹¹ jones at -1 V. Additionally, the response speed (400 μs) is not sacrificed by the trap states because of the dominated faster electron drift motion in the fully depleted device. Our results provide an accurate elucidation of the gain mechanism in CQD photodiodes and promise them great potential in weak light detection.

Highly efficient near-infrared light-emitting diodes based on Zn:CuInSe2/ZnS//ZnS quantum dots with double shell engineering

Near-infrared (NIR) quantum dot-based light-emitting diodes (QLEDs) developed rapidly in the fields of biomedical applications, telecommunications, sensing and diagnostics. However, it remains an enormous challenge for the synthesis of high-quality NIR QD materials with low toxicity or non-toxicity, high photoluminescence (PL) quantum yields (QYs) and high stability. Herein, we used a facile method to synthesize large-sized (8 nm) and thick-shell NIR Zn:CuInSe₂/ZnS//ZnS QDs by engineering a double ZnS shell. The resulting NIR QDs exhibited high PL QYs of 80%, and excellent photochemical stability, which could be ascribed to the decreased lattice mismatch of the core/shell interface by the introduced Zn element into CuInSe₂ cores and the energetic defect passivation of the double ZnS shell engineering. Furthermore, the high-quality Zn:CuInSe₂/ZnS//ZnS QDs based LEDs exhibited the maximum external quantum efficiency (EQE) of 3.0%, 4.0% and 2.5% for PL peaks located at 705, 719 and 728 nm, respectively. This efficiency is comparable to that of the outstanding PbS- and InAs-based NIR QLEDs, as well as the avoidance of toxic heavymetal and/or hazardous reagents in this work. The synthesized high-quality Zn:CuInSe₂/ZnS//ZnS QDs could be expected to promote the potential applications of heavy-metal-free QDs in the NIR fields.

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform

At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array between the GaSb buffer layer and GaAs substrate. Transmission electron microscopy and energy-dispersive X-ray spectroscopy revealed that the heterostructure on GaSb-on-GaAs is epitaxial, single-crystalline but with a reduced material homogeneity, extended lattice defects and atomic segregation/intermixing in comparison to that on the GaSb substrate. Strain-induced degradation of the material quality is observed by temperature-dependent current-voltage measurements. The T2SL with the IMF array appears as a potentially effective route to mitigate the impact of the lattice mismatch once its fabrication is fully optimized for these systems, but additional strain compensating measures can enable a low cost, scalable manufacturing of focal plane arrays (FPA) for thermal imaging cameras for spectroscopy, dynamic scene projection, thermometry, and remote gas sensing.

Halide perovskites as disposable epitaxial templates for the phase-selective synthesis of lead sulfochloride nanocrystals

Colloidal chemistry grants access to a wealth of materials through simple and mild reactions. However, even few elements can combine in a variety of stoichiometries and structures, potentially resulting in impurities or even wrong products. Similar issues have been long addressed in organic chemistry by using reaction-directing groups, that are added to a substrate to promote a specific product and are later removed. Inspired by such approach, we demonstrate the use of CsPbCl₃ perovskite nanocrystals to drive the phase-selective synthesis of two yet unexplored lead sulfochlorides: Pb₃S₂Cl₂ and Pb₄S₃Cl₂. When homogeneously nucleated in solution, lead sulfochlorides form Pb₃S₂Cl₂ nanocrystals. Conversely, the presence of CsPbCl₃ triggers the formation of Pb₄S₃Cl₂/CsPbCl₃ epitaxial heterostructures. The phase selectivity is guaranteed by the continuity of the cationic subnetwork across the interface, a condition not met in a hypothetical Pb₃S₂Cl₂/CsPbCl₃ heterostructure. The perovskite domain is then etched, delivering phase-pure Pb₄S₃Cl₂ nanocrystals that could not be synthesized directly.

Phase-selective approaches, such using reaction-directing groups, are often seen in traditional organic chemistry and catalysis. Here authors use perovskite nanocrystals as disposable templates to drive the phase-selective synthesis of two colloidal nanomaterials, the lead sulfohalides Pb₃S₂Cl₂ and Pb₄S₃Cl₂.

Intraband Transitions of Nanocrystals Transforming from Lead Selenide to Self-doped Silver Selenide Quantum Dots by Cation Exchange

In search of heavy metal-free mid-IR active colloidal materials, self-doped silver selenide colloidal quantum dots (CQDs) can be an alternative offering tunable mid-IR wavelength with a narrow bandwidth. One of the challenges in the study of the intraband transition is developing a method to widen the intraband transition energy range as well as reducing the toxicity of the materials. Here, we present Ag_xSe (x > 2) CQDs exhibiting an intraband transition up to 0.39 eV, produced by the cation exchange (CE) method from PbSe CQDs. The major electronic transition efficiently changes from the SWIR band gap of PbSe CQDs to the mid-IR intraband transition of the Ag_xSe CQDs by the CE. The intraband exciton is verified by examining the absorption and emission of the CE Ag_xSe CQDs as well as their applications on electrochemical mid-IR luminescence and mid-IR intraband photodetectors.

Limiting Factors of Detectivity in Near-Infrared Colloidal Quantum Dot Photodetectors

Lead sulfide colloidal quantum dots (PbS CQDs) have shown great potential in photodetectors owing to their promising optical properties, especially their strong and tunable absorption. However, the limitation of the specific detectivity (D*) in CQD near-infrared (NIR) photodetectors remains unknown due to the ambiguous noise analysis. Therefore, a clear understanding of the noise current is critically demanded. Here, we elucidate that the noise current is the predominant factor limiting D*, and the noise is highly dependent on the trap densities in halide-passivated PbS films and the carriers injected from the Schottky contact (EDT-passivated PbS films/metal). It is found that the thickness of CQDs is proportional to their interface trap density, while it is inversely proportional to their minimal bulk trap density. A balance point can be reached at a certain thickness (136 nm) to minimize the trap density, giving rise to the improvement of D*. Utilizing thicker PbS-EDT films broadens the width of the tunneling barrier and thereby reduces the carrier injection, contributing to a further enhancement of D*. The limiting factors of D* determined in this work not only explain the physical mechanism of the influence on detection sensitivity but also give guidance to the design of high-performance CQD photodetectors.

Water stable, red emitting, carbon nanoparticles stimulate 3D cell invasion via clathrin-mediated endocytic uptake

Bright fluorescent nanoparticles with excitation and emission towards the red end of the spectrum are highly desirable in the field of bioimaging. We present here a new class of organic carbon-based nanoparticles (CNPs) with a robust quantum yield and fluorescence towards the red region of the spectrum. Using organic substrates such as para-phenylenediamine (PPDA) dispersed in diphenyl ether under reflux conditions, we achieved scalable amounts of CNPs with an average size of 27 nm. These CNPs were readily taken up by different mammalian cells, and we show that they prefer clathrin-mediated endocytosis for their cellular entry route. Not only can these CNPs be specifically taken up by cells, but they also stimulate cellular processes such as cell invasion from 3D spheroid models. This new class of CNPs, which have sizes similar to those of proteinaceous ligands, hold immense potential for their surface functionalization. These could be explored as promising bioimaging agents for biomedical imaging and intracellular drug delivery.

Flexible CdSe/ZnS Quantum-Dot Light-Emitting Diodes with Higher Efficiency than Rigid Devices

Fabrication of high-performance, flexible quantum-dot light-emitting diodes (QLEDs) requires the reliable manufacture of a flexible transparent electrode to replace the conventional brittle indium tin oxide (ITO) transparent electrode, along with flexible substrate planarization. We deposited a transparent oxide/metal/oxide (OMO) electrode on a polymer planarization layer and co-optimized both layers. The visible transmittance of the OMO electrode on a polyethylene terephthalate substrate increased markedly. Good electron supply and injection into an electron-transporting layer were achieved using WO_X/Ag/ WO_X and MoOx/Ag/MoO_X OMO electrodes. High-performance flexible QLEDs were fabricated from these electrodes; a QLED with a MoO_X/Ag/ MoO_X cathode and an SU-8 planarization layer had a current efficiency of 30.3 cd/A and luminance more than 7 × 10⁴ cd/m². The current efficiency was significantly higher than that of a rigid QLED with an ITO cathode and was higher than current efficiency values obtained from previously reported QLEDs that utilized the same quantum-dot and electron-transporting layer materials as our study.

Guanidinium-Pseudohalide Perovskite Interfaces Enable Surface Reconstruction of Colloidal Quantum Dots for Efficient and Stable Photovoltaics

Complete surface passivation of colloidal quantum dots (CQDs) and their strong electronic coupling are key factors toward high-performance CQD-based photovoltaics (CQDPVs). Also, the CQD matrices must be protected from oxidative environments, such as ambient air and moisture, to guarantee air-stable operation of the CQDPVs. Herein, we devise a complementary and effective approach to reconstruct the oxidized CQD surface using guanidinium and pseudohalide. Unlike conventional halides, thiocyanate anions provide better surface passivation with effective replacement of surface oxygen species and additional filling of defective sites, whereas guanidinium cations promote the construction of epitaxial perovskite bridges within the CQD matrix and augment electronic coupling. Additionally, we replace a defective 1,2-ethanedithiol-treated CQD hole transport layer (HTL) with robust polymeric HTLs, based on a judicious consideration of the energy level alignment established at the CQD/HTL interface. These efforts collectively result in high-performance and stable CQDPVs with photocurrents over 30 mA cm^-2, ∼80% quantum efficiency at excitonic peaks and stable operation under humid and ambient conditions. Elucidation of carrier dynamics further reveals that interfacial recombination associated with band alignment governs both the CQDPV performance and stability.

High-yield synthesis of CsPbBr3nanoparticles: diphenylphosphine as a reducing agent and its effect in Pb-seeding nucleation and growth

Based on the reported nucleation mechanisms for CsPbX₃and II-VI/IV-VI quantum dots, CsPbBr₃nanoparticles with a higher reaction-yield (up to 393% mass-increment) were synthetized by the hot-injection method. The introduction of diphenylphosphine (DPP) as a reducing agent improved nanoparticle nucleation and growth, giving out evidence for Pb-seeding in CsPbBr₃nanoparticles formation. Additionally, a clear influence of the DPP in a CsPbBr₃-Cs₄PbBr₆incomplete phase transformation was observed, marked by the appearance of several PbBr₂nanoparticles. This indicated the need for an improved ratio between the stabilizing agents and the precursors, due to the increased number of nucleation sites produced by DPP. The resulting CsPbBr₃nanoparticles showed high quality, as they displayed 70%-90% photoluminescence quantum yield; narrow size distribution with an average nanoparticle size of∼10 nm; and the characteristic cubic morphology reported in previous works. This increment in CsPbBr₃nanoparticles' reaction yield will contribute to making them a more attractive option for different optoelectronic applications.

Synthetic Ligand Selection Affects Stoichiometry, Carrier Dynamics, and Trapping in CuInSe2 Nanocrystals

CuInSe₂ nanocrystals exhibit tunable near-infrared bandgaps that bolster utility in photovoltaic applications as well as offer potential as substitutes for more toxic Cd- and Pb-based semiconductor compositions. However, they can present a variety of defect states and unusual photophysics. Here, we examine the effects of ligand composition (oleylamine, diphenylphosphine, and tributylphosphine) on carrier dynamics in these materials. Via spectroscopic measurements such as photoluminescence and transient absorption, we find that ligands present during the synthesis of CuInSe₂ nanocrystals impart nonradiative electronic states which compete with radiative recombination and give rise to low photoluminescence quantum yields. We characterize the nature of these defect states (hole vs electron traps) and investigate whether they exist at the surface or interior of the nanocrystals. Carrier lifetimes are highly dependent on ligand identity where oleylamine-capped nanocrystals exhibit rapid trapping (<20 ps) followed by diphenylphosphine (<500 ps) and finally tributylphosphine (>2 ns). A majority of carrier population localizes at indium copper antisites (electrons), copper vacancies (holes), or surface traps (electrons and/or holes), all of which are nonemissive.

Boosting and Activating NIR-IIb Luminescence of Ag2Te Quantum Dots with a Molecular Trigger

Near-infrared (NIR) excited and NIR-IIb emissive Ag₂Te quantum dots (QDs) display significant advantages in luminescence bioimaging and biosensing due to their unique photophysical properties. However, the poor luminescence intensity and limited strategy for constructing activatable probes severely restrict the wide bioapplications of Ag₂Te QDs. Herein, we proposed a NIR dye-sensitization strategy to solve these two problems. First, we used IR-780 as the antenna for Ag₂Te QDs to improve the ability of harvesting excitation light, obtaining 21-fold luminescence enhancement at 1620 nm under an 808 nm laser irradiation. Subsequently, by further functionalizing the heptamethine cyanine with a recognition unit of glutathione (GSH), Cy-GSH with target-triggered emission was yielded, which served as the potential sensitizer for Ag₂Te QDs to fabricate an activatable ratiometric NIR-IIb nanoprobe for visualizing GSH in vivo with high contrast. This new strategy is expected as a powerful tool to promote the bioapplication of NIR-IIb QDs in the future.

PbS1−xSex-Quantum-Dot@MWCNT/P3HT Nanocomposites with Tunable Photoelectric Conversion Performance

The photoelectric performance of quantum dots (QDs)-based nanocomposites is closely related to the optical properties of QDs, which play a critical role in the optical absorption and separation/transfer of charge carriers. Herein, we report a nanocomposite composed of light absorber PbS1−xSex quantum dots (QDs), electron-conducting multiwalled carbon nanotubes (MWCNTs) and hole-conducting poly-3-hexylthiophene (P3HT) with tunable photoelectric conversion performance. In addition to using the quantization effect, we proposed solid-solution PbS1−xSex QDs (x = 0, 0.25, 0.5, 0.75, 1) for band gap engineering. In particular, we successfully synthesized relatively small (~5.3 nm) and uniform QDs via the hot-injection method by using PbCl2, S/Se powder and environmentally friendly oleylamine (OLA) as the precursors and/or solvent. By increasing the content of Se, the band gap of PbS1−xSex QDs decreased along with the decrease in the conduction band and valence band edges. The suitable energy level alignment enabled the efficient transfer of photoinduced charge carriers, and hence a much higher photoelectric conversion performance of the PbS1−xSex-QD@MWCNT/P3HT nanocomposites than the individual QDs, P3HT, and binary PbS1−xSex-QD@MWCNT, as well as the best performance, was achieved over PbS0.75Se0.25-QD@MWCNT/P3HT.

Near-Unity Singlet Fission on a Quantum Dot Initiated by Resonant Energy Transfer

The conversion of a high-energy photon into two excitons using singlet fission (SF) has stimulated a variety of studies in fields from fundamental physics to device applications. However, efficient SF has only been achieved in limited systems, such as solid crystals and covalent dimers. Here, we established a novel system by assembling 4-(6,13-bis(2-(triisopropylsilyl)ethynyl)pentacen-2-yl)benzoic acid (Pc) chromophores on nanosized CdTe quantum dots (QDs). A near-unity SF (198 ± 5.7%) initiated by interfacial resonant energy transfer from CdTe to surface Pc was obtained. The unique arrangement of Pc determined by the surface atomic configuration of QDs is the key factor realizing unity SF. The triplet-triplet annihilation was remarkably suppressed due to the rapid dissociation of triplet pairs, leading to long-lived free triplets. In addition, the low light-harvesting ability of Pc in the visible region was promoted by the efficient energy transfer (99 ± 5.8%) from the QDs to Pc. The synergistically enhanced light-harvesting ability, high triplet yield, and long-lived triplet lifetime of the SF system on nanointerfaces could pave the way for an unmatched advantage of SF.

Versatile Types of Inorganic/Organic NIR-IIa/IIb Fluorophores: From Strategic Design toward Molecular Imaging and Theranostics

In vivo imaging in the second near-infrared window (NIR-II, 1000-1700 nm), which enables us to look deeply into living subjects, is producing marvelous opportunities for biomedical research and clinical applications. Very recently, there has been an upsurge of interdisciplinary studies focusing on developing versatile types of inorganic/organic fluorophores that can be used for noninvasive NIR-IIa/IIb imaging (NIR-IIa, 1300-1400 nm; NIR-IIb, 1500-1700 nm) with near-zero tissue autofluorescence and deeper tissue penetration. This review provides an overview of the reports published to date on the design, properties, molecular imaging, and theranostics of inorganic/organic NIR-IIa/IIb fluorophores. First, we summarize the design concepts of the up-to-date functional NIR-IIa/IIb biomaterials, in the order of single-walled carbon nanotubes (SWCNTs), quantum dots (QDs), rare-earth-doped nanoparticles (RENPs), and organic fluorophores (OFs). Then, these novel imaging modalities and versatile biomedical applications brought by these superior fluorescent properties are reviewed. Finally, challenges and perspectives for future clinical translation, aiming at boosting the clinical application progress of NIR-IIa and NIR-IIb imaging technology are highlighted.

Quantum dots/graphene nanohybrids photodetectors: progress and perspective

Semiconductor quantum dots/graphene heterostructure nanohybrids combine the advantages of the enhanced light–matter interaction and spectral tunability of quantum dots (QDs) and high charge mobility in graphene as a charge transport pathway, providing a unique platform for exploration of photodetectors with high performance. In particular, the QDs/graphene nanohybrids allow resolution to the critical issue of charge transport in QDs-only photodetectors stemming from the low charge mobility associated with both QD surface defect states and inter-QD junctions. Furthermore, the achieved capability in industrial-scale fabrication of graphene and colloidal QDs has motivated efforts in research of QDs/graphene nanohybrids focal plane arrays that are expected to be not only high performance and low cost, but also light-weight, flexible and wearable. This paper aims to highlight recent progress made in the research and development of QDs/graphene nanohybrid photodetectors and discuss the challenges remained towards their commercial applications.

Bioinspired, Nanostructure-Amplified, Subcutaneous Light Harvesting to Power Implantable Biomedical Electronics

Implantable biomedical electronics hold immense promise for in vivo personalized healthy monitoring and even precise therapeutic intervention. Tremendous miniaturization of indwelling modules enables implanted biomedical devices to perform multiple functions with ultralow power consumption but exacerbates the technical challenges of supplying effective power to the devices in vivo. In this Perspective, we summarize new developments in transmitting near-infrared light from sunlight or a light-emitting diode into subcutaneously implanted photovoltaic cells, in which the light utilization efficiency can be amplified with the aid of nanostructured rear reflectors. Considering the many natural examples of nanostructure-induced structural coloration displayed by submarine animals, we wish to open up new prospects of bioinspired, nanostructure-amplified, subcutaneous light harvesting to power implanted biomedical electronics.

Preparation and Characterization of Quantum Dot-Peptide Conjugates Based on Polyhistidine Tags

Quantum dots (QDs) offer bright and robust photoluminescence among several other advantages in comparison to fluorescent dyes. In order to leverage the advantageous properties of QDs for applications in bioanalysis and imaging, simple and reliable methods for bioconjugation are required. One such method for conjugating peptides to QDs is the use of polyhistidine tags, which spontaneously bind to the surface of QDs. We describe protocols for assembling polyhistidine-tagged peptides to QDs and for characterizing the resultant QD-peptide conjugates. The latter include both electrophoretic and FRET-based protocols for confirming successful peptide assembly, estimating the maximum peptide loading capacity, and measuring the assembly kinetics. Sensors for protease activity and intracellular delivery are briefly noted as prospective applications of QD-peptide conjugates.

Breaking through the Size Control Dilemma of Silver Chalcogenide Quantum Dots via Trialkylphosphine-Induced Ripening: Leading to Ag2Te Emitting from 950 to 2100 nm

Ag₂Te is one of the most promising semiconductors with a narrow band gap and low toxicity; however, it remains a challenge to tune the emission of Ag₂Te quantum dots (QDs) precisely and continuously in a wide range. Herein, Ag₂Te QDs emitting from 950 to 2100 nm have been synthesized via trialkylphosphine-controlled growth. Trialkylphosphine has been found to induce the dissolution of small-sized Ag₂Te QDs due to its stronger ability to coordinate to the Ag ion than that of 1-octanethiol, predicated by the density functional theory. By controlling this dissolution effect, the monomer supply kinetics can be regulated, achieving precise size control of Ag₂Te QDs. This synthetic strategy results in state-of-the-art silver-based QDs with emission tunability. Only by taking advantage of such an ultrawide emission has the sizing curve of Ag₂Te been obtained. Moreover, the absolute photoluminescence quantum yield of Ag₂Te QDs can reach 12.0% due to their well-passivated Ag-enriched surface with a density of 5.0 ligands/nm², facilitating noninvasive in vivo fluorescence imaging. The high brightness in the long-wavelength near-infrared (NIR) region makes the cerebral vasculature and the tiny vessel with a width of only 60 μm clearly discriminable. This work reveals a nonclassical growth mechanism of Ag₂Te QDs, providing new insight into precisely controlling the size and corresponding photoluminescence properties of semiconductor nanocrystals. The ultrasmall, low-toxicity, emission-tunable, and bright NIR-II Ag₂Te QDs synthesized in this work offer a tremendous promise for multicolor and deep-tissue in vivo fluorescence imaging.

Photoluminescent Nanoparticles for Chemical and Biological Analysis and Imaging

Research related to the development and application of luminescent nanoparticles (LNPs) for chemical and biological analysis and imaging is flourishing. Novel materials and new applications continue to be reported after two decades of research. This review provides a comprehensive and heuristic overview of this field. It is targeted to both newcomers and experts who are interested in a critical assessment of LNP materials, their properties, strengths and weaknesses, and prospective applications. Numerous LNP materials are cataloged by fundamental descriptions of their chemical identities and physical morphology, quantitative photoluminescence (PL) properties, PL mechanisms, and surface chemistry. These materials include various semiconductor quantum dots, carbon nanotubes, graphene derivatives, carbon dots, nanodiamonds, luminescent metal nanoclusters, lanthanide-doped upconversion nanoparticles and downshifting nanoparticles, triplet-triplet annihilation nanoparticles, persistent-luminescence nanoparticles, conjugated polymer nanoparticles and semiconducting polymer dots, multi-nanoparticle assemblies, and doped and labeled nanoparticles, including but not limited to those based on polymers and silica. As an exercise in the critical assessment of LNP properties, these materials are ranked by several application-related functional criteria. Additional sections highlight recent examples of advances in chemical and biological analysis, point-of-care diagnostics, and cellular, tissue, and in vivo imaging and theranostics. These examples are drawn from the recent literature and organized by both LNP material and the particular properties that are leveraged to an advantage. Finally, a perspective on what comes next for the field is offered.

Oriented-Attachment- and Defect-Dependent PbTe Quantum Dots Growth: Shape Transformations Supported by Experimental Insights and DFT Calculations

High-resolution transmission electron microscopy results reveal that oriented-attachment- and defect-dependent mechanisms rule the size and shape evolution of the monodispersed PbTe quantum dots (QDs). The former is characterized by the growth of quasi-cubic PbTe QDs, which depends on both the geometric constraints imposed by the {200} facets and the defect-free lattice, while the latter one is a defect-dependent mechanism which gives way to the formation of decahedral PbTe QDs (∼6 nm). Experimentally, formaldehyde is an important parameter for the mechanochemical synthesis of monodispersed PbTe QDs, which has not been studied until now. In a theoretical context, Fukui functions reveal that Pb surface atoms are the most reactive sites toward nucleophilic attacks, and the Lowdin charge analysis shows that formaldehyde molecules tend to donate their electron pairs to Pb atoms. Besides, formaldehyde-molecule-on-PbTe adsorption energies (-4.46 to -21.16 kcal mol^-1) agree with ligand-surface polar electrostatic interactions. Based on dispersion-corrected density functional theory calculations, PbTe QDs exhibited decahedral and faceted shapes. According to modified Wulff constructions, the decahedral shape is a result of (111) facets (Δγ = -2.79 meV Å^-2), whereas the faceted and rounded shapes are due to the interaction of (100), (110), and (111) facets.

Infrared photoconduction at the diffusion length limit in HgTe nanocrystal arrays

Narrow band gap nanocrystals offer an interesting platform for alternative design of low-cost infrared sensors. It has been demonstrated that transport in HgTe nanocrystal arrays occurs between strongly-coupled islands of nanocrystals in which charges are partly delocalized. This, combined with the scaling of the noise with the active volume of the film, make case for device size reduction. Here, with two steps of optical lithography we design a nanotrench which effective channel length corresponds to 5–10 nanocrystals, matching the carrier diffusion length. We demonstrate responsivity as high as 1 kA W⁻¹, which is 10⁵ times higher than for conventional µm-scale channel length. In this work the associated specific detectivity exceeds 10¹² Jones for 2.5 µm peak detection under 1 V at 200 K and 1 kHz, while the time response is as short as 20 µs, making this performance the highest reported for HgTe NC-based extended short-wave infrared detection.

Infrared nanocrystals have become an enabling building block for the design of low-cost infrared sensors. Here, Chu et al. design a nanotrench device geometry at the diffusion length limit in HgTe nanocrystals and demonstrate the record high sensing performance operated in the short-wave infrared.

Beyond the Bandgap Photoluminescence of Colloidal Semiconductor Nanocrystals

Intraband transitions of colloidal semiconductor nanocrystals, or the electronic transitions occurring in either the conduction band or valence band, have recently received considerable attention because utilizing the intraband transitions provides new approaches for applications such as photodetectors, imaging, solar cells, lasers, and so on. In the past few years, it has been revealed that observing the intraband transition is not limited for temporal measurement such as ultrafast spectroscopy but available for steady-state measurement even under ambient conditions with the help of self-doped semiconductor nanocrystals. Considering the large absorption coefficient of the steady-state intraband transition comparable to that of the bandgap transition, the use of the intraband transition will be promising for both fundamental and application studies. Here, we summarize the recent progress in studies on intraband photoluminescence of self-doped semiconductor nanocrystals and discuss key questions to be addressed in future research.

Whole-Body Fluorescence Imaging in the Near-Infrared Window

Fluorescence imaging is one of the most widely used in vivo imaging methods for both fundamental research and clinical practice. Due to the reduced photon scattering, absorption, and autofluorescence in tissues, the emerging near-infrared (NIR) imaging (650-1700 nm) can afford deep tissue imaging with high spatiotemporal resolution and in vivo report the anatomical structures as well as the physiological activities in a whole-body level. Here, we give a brief introduction to fluorescence imaging in the first NIR (NIR-I, 650-950 nm) and second NIR (NIR-II, 1000-1700 nm) windows, summarize the recently developed NIR fluorophores and their applications in whole-body vascular system imaging, precision cancer theranostics, and regenerative medicine. Finally, the clinical applications and future prospects of in vivo NIR fluorescence imaging are also discussed.

PbS Colloidal Quantum Dot Inks for Infrared Solar Cells

Infrared PbS colloidal quantum dot (CQD)-based materials receive significant attention because of its unique properties. The PbS CQD ink that originates from ligand exchange of CQDs is highly potential for efficient and stable infrared CQD solar cells (CQDSCs) using low-temperature solution-phase processing. In this review, we present a comprehensive overview of CQD inks for the development of efficient infrared solar cells, which can effectively harvest the photons from the infrared wavelength region of the solar spectrum, including the importance of infrared absorbers for solar cells, the unique properties of CQDs, ligand-exchange determined CQD inks, and related photovoltaic performance of CQDSCs. Finally, we present a brief conclusion, and the possible challenges and opportunities of the CQD inks are discussed in-depth to further develop highly efficient and stable infrared solar cells.

Phenethylamine ligand engineering of red InP quantum dots for improving the efficiency of quantum dot light-emitting diodes

In this Letter, red-emitting multi-shelled indium phosphide (InP) quantum dots (QDs) were synthesized using the safe phosphorus precursor tris(dimethylamino)phosphine ((DMA)₃P). The long-chain ligands of oleylamine (OAm) in the (DMA)₃P phosphide source-based InP QDs were partially exchanged with short-chain ligands of phenethylamine (PEA) in the core formation process, and the resulting InP QDs were applied to quantum dot light-emitting diodes (QLEDs). The short-chain ligands of PEA with the π-conjugated benzene ring improved the charge transport and electrical conduction of the QLEDs with (DMA)₃P phosphide source-based InP QDs. The PEA-engineering of InP QDs improved their maximum quantum yield from 71% to 85.5% with the full-width at half-maximum of 62 nm. Furthermore, the maximum external quantum efficiency of QLEDs with the PEA-engineered InP QDs improved from 1.9% to 3.5%, and their maximum power efficiency increased from 2.8 to 6.0 lm/W. This Letter demonstrates that engineering the core formation process with the short-chain ligands of PEA provides an efficient and facile way to improve the charge transport and electrical conduction in (DMA)₃P phosphide source-based InP QLEDs for electroluminescent devices.

In situ Grazing-Incidence Small-Angle X-ray Scattering Observation of Gold Sputter Deposition on a PbS Quantum Dot Solid

For PbS quantum dot (QD)-based optoelectronic devices, gold is the most frequently used electrode material. In most device architectures, gold is in direct contact with the QD solid. To better understand the formation of the interface between gold and a close-packed QD layer at an early stage, in situ grazing-incidence small-angle X-ray scattering is used to observe the gold sputter deposition on a 1,2-ethanedithiol (EDT)-treated PbS QD solid. In the kinetics of gold layer growth, the forming and merging of small gold clusters (radius less than 1.6 nm) are observed at the early stages. The thereby formed medium gold clusters (radius between 1.9-2.4 nm) are influenced by the QDs' templating effect. Furthermore, simulations suggest that the medium gold clusters grow preferably along the QDs' boundaries rather than as a top coating of the QDs. When the thickness of the sputtered gold layer reaches 6.25 nm, larger gold clusters with a radius of 5.3 nm form. Simultaneously, a percolation layer with a thickness of 2.5 nm is established underneath the gold clusters. This fundamental understanding of the QD-gold interface formation will help to control the implementation of sputtered gold electrodes on close-packed QD solids in device manufacturing processes.

Morphological and Surface-State Challenges in Ge Nanoparticle Applications

The intrinsic properties of Ge in tandem with advances in its nanostructuring have resulted in its increased attention in a variety of fields as an alternative to traditional group 12-14 and 14-16 nanoparticles (NPs). The small band gap and size-dependent development of the optical properties in tandem with their good charge transport properties make Ge NPs a suitable material for optoelectronic devices. The low toxicity of Ge, together with its IR photoluminescence (PL) that overlaps with desirable biological optical windows used for tissue imaging, allows the exploitation of these materials in the field of bioimaging and as drug carriers. In addition, the ability of germanium to both exhibit high mechanical stability in its NP form and alloy with lithium and sodium metals has led to it being a highly attractive material for next-generation lithium ion and beyond-lithium batteries. While it is attracting considerable attention in a variety of areas, research on Ge NPs is still relatively nascent. Fundamental aspects of this material, such as its Bohr radius and the origin of different observed PLs, are still under debate. Moreover, the ability to produce Ge NPs with controlled dimensions and morphology is not yet as mature as for other classes of nanomaterials. In this review, the mechanisms and origins of these properties will be introduced, which we then relate to specific applications presented in the literature.

Hybrid Surface Passivation for Retrieving Charge Collection Efficiency of Colloidal Quantum Dot Photovoltaics

Efficient charge collection in photovoltaics is a key issue toward their high performance. Despite the promising performance of colloidal quantum dot (CQD)-based photovoltaics (CQDPVs), they suffer significant dissipation of photocurrent due to imperfect surface passivation of the CQD hole transport layer (HTL) by a single 1,2-ethaneditihol (EDT) ligand. To address the critical drawback of existing CQDPVs, we offer a hybrid passivation strategy, including both EDT and thiocyanate (SCN). The hybrid passivation leads to seamless surface passivation of CQDs, remarkably suppressing charge recombination. This strategy also augments the p-doping density of the CQD, resulting in a pronounced energy level bending at the active layer/HTL interface and facilitating efficient charge separation. Moreover, enhanced electronic coupling across the CQDs (originating from reduced inter-dot spacing) promotes rapid charge extraction. Consequently, the flawless charge collection by a hybrid-passivated HTL successfully retrieves the photocurrent, achieving an enhanced CQDPV power conversion efficiency of 12.70% compared with 11.49% for the control device.

Electroluminescence from HgTe Nanocrystals and Its Use for Active Imaging

Mercury telluride (HgTe) nanocrystals are among the most versatile infrared (IR) materials with the absorption of lowest energy optical absorption which can be tuned from the visible to the terahertz range. Therefore, they have been extensively considered as near IR emitters and as absorbers for low-cost IR detectors. However, the electroluminescence of HgTe remains poorly investigated despite its ability to go toward longer wavelengths compared to traditional lead sulfide (PbS). Here, we demonstrate a light-emitting diode (LED) based on an indium tin oxide (ITO)/zinc oxide (ZnO)/ZnO-HgTe/PbS/gold-stacked structure, where the emitting layer consists of a ZnO/HgTe bulk heterojunction which drives the charge balance in the system. This LED has low turn-on voltage, long lifetime, and high brightness. Finally, we conduct short wavelength infrared (SWIR) active imaging, where illumination is obtained from a HgTe NC-based LED, and demonstrate moisture detection.