1
|
Malik P, Naskar S, Sengupta D, Mandal D. Controlled Molecular Orientation through Intercalation in PVDF Thin Films: Exhibiting Ultralong Retention and Improved Leakage Current. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:8400-8408. [PMID: 38598711 DOI: 10.1021/acs.langmuir.3c03868] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2024]
Abstract
Ferroelectric switching and retention performance of poly(vinylidene fluoride) (PVDF) thin films improve by the incorporation of unmodified smectite montmorillonite (MMT) clay nanodielectric. In the present study, an intercalated PVDF (clay/PVDF) thin film with edge-on β-crystallite is fabricated via a heat-controlled spin coating (HCSC) technique. This provides an efficient and simple way to fabricate the edge-on oriented crystallite lamellae with an electroactive β-phase, facilitating nanoscale ferroelectric switching at a lower voltage compared to the face-on orientation. Here, we demonstrate the polarization retention for periods longer than 20 days (∼480 h, i.e., 1.8 × 106 s), with no degradation in switched nanoscale domains. In addition, by maintaining the relatively high dielectric constant, the incorporation of nanoclay effectively lowers the leakage current by 102 factors. The obtained memory window in the edge-on orientation is 7 V, approximately twice the memory window obtained in the face-on orientation. In short, our findings provide a simple and promising route to fabricate edge-on oriented PVDF thin films, with ultralong retention, high dielectric constant, and improved leakage current.
Collapse
Affiliation(s)
- Pinki Malik
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India
| | - Sudip Naskar
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India
| | - Dipanjan Sengupta
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India
| | - Dipankar Mandal
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali 140306, India
| |
Collapse
|
2
|
Malik P, Sengupta D, Kumar A, Saini D, Mandal D. Hydrogen Bonding-Assisted Complete Ferroelectric β-Phase Conversion in Poly(vinylidene fluoride) Thin Films: Exhibiting an Excellent Memory Window and Long Retention. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:10511-10520. [PMID: 37458707 DOI: 10.1021/acs.langmuir.3c00959] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2023]
Abstract
Organic nonvolatile memory with low power consumption is a critical research demand for next-generation memory applications. Ferroelectric switching characteristics of poly(vinylidene fluoride) (PVDF) thin films modified with a trace amount of hydrated Cu salt (CuCl2·2H2O) are explored in the present study. Herein, a Cu salt-mediated PVDF (Cu/PVDF) thin film with preferential edge-on β-crystallites is fabricated through the orientation-controlled spin coating (OCSC) technique. This work proposes a convenient and effective approach to produce edge-on-oriented electroactive PVDF thin films with a high degree of polar β-phase, so as to realize the favorable switching under low operating voltages. Herein, chemically modified PVDF is anticipated to form a complex intermediate, which attains its stability by undergoing favorable hydrogen bonding that reorients the C-C structure of PVDF to obtain the β-conformation. Such information is verified by X-ray photoelectron spectroscopy (XPS). Grazing incidence Fourier transform infrared (GI-FTIR) spectroscopy revealed that the Cu salt incorporated into the PVDF matrix favored the formation of the electroactive β-phase with edge-on crystallite lamellae. Consequently, the Cu/PVDF thin film demonstrates a good contrast between electric field-assisted written and erased data bits in the piezoresponse force microscopy (PFM) phase image. Furthermore, to obtain the ferroelectric memory window, a metal-ferroelectric-insulator-semiconductor (MFIS) diode with Cu/PVDF as a ferroelectric layer has been fabricated. The capacitance-voltage (C-V) characteristic of the MFIS diode exhibits a memory window of 12 V with a long-term retention behavior (∼longer than 7 days). In a nutshell, we tried to represent a clear understanding of the interfacial interactions of the Cu salt with PVDF, which favor the edge-on formation that results in the promising low-voltage ferroelectric switching and excellent retention response, where any additional electrical poling and/or external stretching is completely possible to be ruled out, thus offering a new prospect for the evolution of devices with long-lasting nonvolatile memories.
Collapse
Affiliation(s)
- Pinki Malik
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector-81, Mohali 140306, India
| | - Dipanjan Sengupta
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector-81, Mohali 140306, India
| | - Ajay Kumar
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector-81, Mohali 140306, India
| | - Dalip Saini
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector-81, Mohali 140306, India
| | - Dipankar Mandal
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Knowledge City, Sector-81, Mohali 140306, India
| |
Collapse
|
3
|
Nawaz A, Merces L, Ferro LMM, Sonar P, Bufon CCB. Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204804. [PMID: 36124375 DOI: 10.1002/adma.202204804] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 09/13/2022] [Indexed: 06/15/2023]
Abstract
The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.
Collapse
Affiliation(s)
- Ali Nawaz
- Center for Sensors and Devices, Bruno Kessler Foundation (FBK), Trento, 38123, Italy
| | - Leandro Merces
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-100, Brazil
| | - Letícia M M Ferro
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Brazilian Nanotechnology National Laboratory (LNNano), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo, 13083-100, Brazil
- Institute of Chemistry, University of Campinas, Campinas, São Paulo, 13083-970, Brazil
| | - Prashant Sonar
- School of Chemistry and Physics, Queensland University of Technology (QUT), Brisbane, QLD, 4000, Australia
- Centre for Materials Science, Queensland University of Technology, 2 George Street, Brisbane, QLD, 4000, Australia
| | - Carlos C B Bufon
- MackGraphe - Graphene and Nanomaterials Research Center, Mackenzie Presbyterian Institute, São Paulo, 01302-907, Brazil
| |
Collapse
|
4
|
Xiang L, Wang Y, Xia F, Liu F, He D, Long G, Zeng X, Liang X, Jin C, Wang Y, Pan A, Peng LM, Hu Y. An epidermal electronic system for physiological information acquisition, processing, and storage with an integrated flash memory array. SCIENCE ADVANCES 2022; 8:eabp8075. [PMID: 35977018 PMCID: PMC9385141 DOI: 10.1126/sciadv.abp8075] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Epidermal electronic systems that simultaneously provide physiological information acquisition, processing, and storage are in high demand for health care/clinical applications. However, these system-level demonstrations using flexible devices are still challenging because of obstacles in device performance, functional module construction, or integration scale. Here, on the basis of carbon nanotubes, we present an epidermal system that incorporates flexible sensors, sensor interface circuits, and an integrated flash memory array to collect physiological information from the human body surface; amplify weak biosignals by high-performance differential amplifiers (voltage gain of 27 decibels, common-mode rejection ratio of >43 decibels, and gain bandwidth product of >22 kilohertz); and store the processed information in the memory array with performance on par with industrial standards (retention time of 108 seconds, program/erase voltages of ±2 volts, and endurance of 106 cycles). The results shed light on the great application potential of epidermal electronic systems in personalized diagnostic and physiological monitoring.
Collapse
Affiliation(s)
- Li Xiang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
- College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Yuru Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Fan Xia
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Fang Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Daliang He
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Guanhua Long
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Xiangwen Zeng
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Xuelei Liang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Yuwei Wang
- College of Electrical and Information Engineering, Hunan University, Changsha 410082, China
| | - Anlian Pan
- College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Youfan Hu
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Corresponding author.
| |
Collapse
|
5
|
Choi J, Lee C, Lee C, Park H, Lee SM, Kim CH, Yoo H, Im SG. Vertically stacked, low-voltage organic ternary logic circuits including nonvolatile floating-gate memory transistors. Nat Commun 2022; 13:2305. [PMID: 35484111 PMCID: PMC9051064 DOI: 10.1038/s41467-022-29756-w] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/09/2021] [Accepted: 03/03/2022] [Indexed: 11/25/2022] Open
Abstract
Multi-valued logic (MVL) circuits based on heterojunction transistor (HTR) have emerged as an effective strategy for high-density information processing without increasing the circuit complexity. Herein, an organic ternary logic inverter (T-inverter) is demonstrated, where a nonvolatile floating-gate flash memory is employed to control the channel conductance systematically, thus realizing the stabilized T-inverter operation. The 3-dimensional (3D) T-inverter is fabricated in a vertically stacked form based on all-dry processes, which enables the high-density integration with high device uniformity. In the flash memory, ultrathin polymer dielectrics are utilized to reduce the programming/erasing voltage as well as operating voltage. With the optimum programming state, the 3D T-inverter fulfills all the important requirements such as full-swing operation, optimum intermediate logic value (~VDD/2), high DC gain exceeding 20 V/V as well as low-voltage operation (< 5 V). The organic flash memory exhibits long retention characteristics (current change less than 10% after 104 s), leading to the long-term stability of the 3D T-inverter. We believe the 3D T-inverter employing flash memory developed in this study can provide a useful insight to achieve high-performance MVL circuits. High-density information processing without increasing the circuit complexity is highly desired in electronics. Here, Im et al. demonstrate a low-voltage organic ternary logic circuit vertically integrated with the nonvolatile flash memory, increasing the information density by a factor of 3.
Collapse
Affiliation(s)
- Junhwan Choi
- Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea
| | - Changhyeon Lee
- Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea
| | - Chungryeol Lee
- Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea
| | - Hongkeun Park
- Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea
| | - Seung Min Lee
- Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea
| | - Chang-Hyun Kim
- Department of Electronic Engineering Gachon University 1342 Seongnam-daero, Sujeong-gu, Seongnam, Gyeonggi-do, 13120, Korea
| | - Hocheon Yoo
- Department of Electronic Engineering Gachon University 1342 Seongnam-daero, Sujeong-gu, Seongnam, Gyeonggi-do, 13120, Korea.
| | - Sung Gap Im
- Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea. .,KAIST Institute For NanoCentury (KINC) Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Korea.
| |
Collapse
|
6
|
Zhao S, Liu HY, Cui L, Kang Y, Bian G, Yin J, Yu JC, Chang YW, Zhu J. Elastomeric Nanodielectrics for Soft and Hysteresis-Free Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104761. [PMID: 34632640 DOI: 10.1002/adma.202104761] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2021] [Revised: 09/15/2021] [Indexed: 06/13/2023]
Abstract
Elastomeric dielectrics are crucial for reliably governing the carrier densities in semiconducting channels during deformation in soft/stretchable field-effect transistors (FETs). Uncontrolled stacking of polymeric chains renders elastomeric dielectrics poorly insulated at nanoscale thicknesses, thereby thick films are usually required, leading to high voltage or power consumption for on/off operations of FETs. Here, layer-by-layer assembly is exploited to build 15-nm-thick elastomeric nanodielectrics through alternative adsorption of oppositely charged polyurethanes (PUs) for soft and hysteresis-free FETs. After mild thermal annealing to heal pinholes, such PU multilayers offer high areal capacitances of 237 nF cm-2 and low leakage current densities of 3.2 × 10-8 A cm-2 at 2 V. Owing to the intrinsic ductility of the elastomeric PUs, the nanofilms possess excellent dielectric properties at a strain of 5% or a bending radius of 1.5 mm, while the wrinkled counterparts show mechanical stability with negligible changes of leakage currents after repeated stretching to a strain of 50%. Besides, these nanodielectrics are immune to high humidity and conserve their properties when immersed into water, despite their assembly occurs aqueously. Furthermore, the PU dielectrics are implemented in carbon nanotube FETs, demonstrating low-voltage operations (< 1.5 V) and negligible hysteresis without any encapsulations.
Collapse
Affiliation(s)
- Sanchuan Zhao
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Hai-Yang Liu
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Lei Cui
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Yu Kang
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Gang Bian
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Jun Yin
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| | - Jae-Chul Yu
- R&D Center, Hepce Chem Co., Ltd., Siheung, Gyeonggi, 15588, Korea
| | - Young-Wook Chang
- Department of Materials and Chemical Engineering, BK21 FOUR ERICA-ACE Center, Hanyang University, Ansan, Gyeonggi, 15588, Korea
| | - Jian Zhu
- School of Materials Science and Engineering, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, P. R. China
| |
Collapse
|
7
|
Lee S, Kim S, Yoo H. Contribution of Polymers to Electronic Memory Devices and Applications. Polymers (Basel) 2021; 13:3774. [PMID: 34771332 PMCID: PMC8588209 DOI: 10.3390/polym13213774] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 10/26/2021] [Accepted: 10/29/2021] [Indexed: 11/23/2022] Open
Abstract
Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.
Collapse
Affiliation(s)
| | | | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 1342, Korea; (S.L.); (S.K.)
| |
Collapse
|
8
|
Li Q, Li T, Zhang Y, Zhao H, Li J, Yao J. Dual-functional optoelectronic memories based on ternary hybrid floating gate layers. NANOSCALE 2021; 13:3295-3303. [PMID: 33533792 DOI: 10.1039/d0nr09066b] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Optoelectronic memories based on organic field-effect transistors (OFETs) have been extensively investigated, and great progress has been made in improving memory performance and reducing operating power consumption. Despite these achievements, optoelectronic memories reported so far have only a single storage function, such as light-assisted memory, light writing memory, or light-erasing memory, which may not meet the requirements of multi-functional storage in the future. Here, the dual-functional optoelectronic memories are demonstrated by employing ternary hybrid films as floating gate layers. Integrating the advantages of hole trapping in [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and photoinduced electron trapping in CsPbBr3 quantum dots (QDs), the dual-functional storages including electric programming holes and light programming electrons can be realized in one device. Owing to the complementary charge trapping advantages in CsPbBr3 QDs and PCBM, the devices also show a short light erasing time of 0.05 s and low erasing gate bias within -35 V. In addition, the devices exhibit decent endurance for 500 continuous light programming-reading-electric programming-reading cycling tests and admirable electron and hole retention time of 10 000 s with negligible charge leakage. This study may offer a feasible path for the development of new-generation memory.
Collapse
Affiliation(s)
- Qingyan Li
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Tengteng Li
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Yating Zhang
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Hongliang Zhao
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Jie Li
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| | - Jianquan Yao
- Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China.
| |
Collapse
|
9
|
Shen T, Zhou H, Liu X, Fan Y, Mishra DD, Fan Q, Yang Z, Wang X, Zhang M, Li J. Wettability Control of Interfaces for High-Performance Organic Thin-Film Transistors by Soluble Insulating Polymer Films. ACS OMEGA 2020; 5:10891-10899. [PMID: 32455209 PMCID: PMC7241009 DOI: 10.1021/acsomega.0c00548] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/06/2020] [Accepted: 04/27/2020] [Indexed: 06/11/2023]
Abstract
Organic small-molecule semiconductors have higher carrier mobility compared to polymer semiconductors, while the actual performances of these materials are susceptible to morphological defects and misalignment of crystalline grains. Here, a new strategy is explored to control the crystallization and morphologies of a solution-processed organic small-molecule semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) using soluble polymer films to control the wettability of substrates. Different from the traditional surface modification method, the polymer layer as a modification layer is soluble in the semiconductor solution during the fabrication of organic thin-film transistors (OTFTs). The dissolved polymer alters the state of the semiconductor solution, which in turn, changes the crystallographic morphologies of the semiconductor films. By controlling the solubility and thickness of the polymer modification layers, it is possible to regulate the grain boundary and domain size of C8-BTBT films, which determine the performances of OTFTs. The bottom-gate transistors modified by a thick PS layer exhibit a mobility of >7 cm2/V·s and an on/off ratio of >107. It is expected that this new modification method will be applicable to high-performance OTFTs based on other small molecular semiconductors and dielectrics.
Collapse
Affiliation(s)
- Tao Shen
- Hubei
Collaborative Innovation Center for Advanced Organic Chemical Materials,
Key Laboratory for the Green Preparation and Application of Functional
Materials, Ministry of Education, Hubei Key Laboratory of Polymer
Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
| | - Hui Zhou
- Hubei
Collaborative Innovation Center for Advanced Organic Chemical Materials,
Key Laboratory for the Green Preparation and Application of Functional
Materials, Ministry of Education, Hubei Key Laboratory of Polymer
Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
| | - Xue Liu
- Hubei
Collaborative Innovation Center for Advanced Organic Chemical Materials,
Key Laboratory for the Green Preparation and Application of Functional
Materials, Ministry of Education, Hubei Key Laboratory of Polymer
Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
| | - Yue Fan
- Hubei
Collaborative Innovation Center for Advanced Organic Chemical Materials,
Key Laboratory for the Green Preparation and Application of Functional
Materials, Ministry of Education, Hubei Key Laboratory of Polymer
Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
| | - Debesh Devadutta Mishra
- Hubei
Collaborative Innovation Center for Advanced Organic Chemical Materials,
Key Laboratory for the Green Preparation and Application of Functional
Materials, Ministry of Education, Hubei Key Laboratory of Polymer
Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
| | - Qin Fan
- Hubei
Collaborative Innovation Center for Advanced Organic Chemical Materials,
Key Laboratory for the Green Preparation and Application of Functional
Materials, Ministry of Education, Hubei Key Laboratory of Polymer
Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
| | - Zilu Yang
- Hubei
Collaborative Innovation Center for Advanced Organic Chemical Materials,
Key Laboratory for the Green Preparation and Application of Functional
Materials, Ministry of Education, Hubei Key Laboratory of Polymer
Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
| | - Xianbao Wang
- Hubei
Collaborative Innovation Center for Advanced Organic Chemical Materials,
Key Laboratory for the Green Preparation and Application of Functional
Materials, Ministry of Education, Hubei Key Laboratory of Polymer
Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
| | - Ming Zhang
- School
of Computer Science and Information Engineering, Hubei University, Wuhan 430062, China
| | - Jinhua Li
- Hubei
Collaborative Innovation Center for Advanced Organic Chemical Materials,
Key Laboratory for the Green Preparation and Application of Functional
Materials, Ministry of Education, Hubei Key Laboratory of Polymer
Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
| |
Collapse
|
10
|
Zheng C, Tong T, Hu Y, Gu Y, Wu H, Wu D, Meng H, Yi M, Ma J, Gao D, Huang W. Charge-Storage Aromatic Amino Compounds for Nonvolatile Organic Transistor Memory Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1800756. [PMID: 29806210 DOI: 10.1002/smll.201800756] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2018] [Revised: 04/02/2018] [Indexed: 06/08/2023]
Abstract
Here, charge-storage nonvolatile organic field-effect transistor (OFET) memory devices based on interfacial self-assembled molecules are proposed. The functional molecules contain various aromatic amino moieties (N-phenyl-N-pyridyl amino- (PyPN), N-phenyl amino- (PN), and N,N-diphenyl amino- (DPN)) which are linked by a propyl chain to a triethoxysilyl anchor group and act as the interface modifiers and the charge-storage elements. The PyPN-containing pentacene-based memory device (denoted as PyPN device) presents the memory window of 48.43 V, while PN and DPN devices show the memory windows of 24.88 and 8.34 V, respectively. The memory characteristic of the PyPN device can remain stable along with 150 continuous write-read-erase-read cycles. The morphology analysis confirms that three interfacial layers show aggregation due to the N atomic self-catalysis and hydrogen bonding effects. The large aggregate-covered PyPN layer has the full contact area with the pentacene molecules, leading to the high memory performance. In addition, the energy level matching between PyPN molecules and pentacene creates the smallest tunneling barrier and facilitates the injection of the hole carriers from pentacene to the PyPN layer. The experimental memory characteristics are well in agreement with the computational calculation.
Collapse
Affiliation(s)
- Chaoyue Zheng
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu, 211816, P. R. China
| | - Tong Tong
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu, 211816, P. R. China
| | - Yueming Hu
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu, 210003, P. R. China
| | - Yuming Gu
- Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, No.163 Xianlin Road, Nanjing, Jiangsu, 210023, P. R. China
| | - Huarui Wu
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu, 211816, P. R. China
| | - Dequn Wu
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu, 210003, P. R. China
| | - Hong Meng
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu, 211816, P. R. China
| | - Mingdong Yi
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu, 210003, P. R. China
| | - Jing Ma
- Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering, Nanjing University, No.163 Xianlin Road, Nanjing, Jiangsu, 210023, P. R. China
| | - Deqing Gao
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu, 211816, P. R. China
| | - Wei Huang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Jiangsu National Synergistic Innovation Center for Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, Jiangsu, 211816, P. R. China
| |
Collapse
|
11
|
Shi K, Zhang W, Gao D, Zhang S, Lin Z, Zou Y, Wang L, Yu G. Well-Balanced Ambipolar Conjugated Polymers Featuring Mild Glass Transition Temperatures Toward High-Performance Flexible Field-Effect Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30. [PMID: 29327461 DOI: 10.1002/adma.201705286] [Citation(s) in RCA: 36] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2017] [Revised: 11/06/2017] [Indexed: 06/07/2023]
Abstract
Conjugated polymers, which can be fabricated by simple processing techniques and possess excellent electrical performance, are key to the fabrication of flexible polymer field-effect transistors (PFETs) and integrated circuits. Herein, two ambipolar conjugated polymers based on (3E,7E)-3,7-bis(2-oxo-1H-pyrrolo[2,3-b]pyridin-3(2H)-ylidene)benzo[1,2-b:4,5-b']difuran-2,6(3H,7H)-dione and dithienylbenzothiadiazole units, namely PNBDOPV-DTBT and PNBDOPV-DTF2BT, are developed. Both copolymers possess almost planar conjugated backbone conformations and suitable highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) energy levels (-5.64/-4.38 eV for PNBDOPV-DTBT and -5.79/-4.48 eV for PNBDOPV-DTF2BT). Note that PNBDOPV-DTBT has a glass transition temperature (140 °C) lower than the deformation temperature of polyethylene terephthalate (PET), meaning well-ordered molecular packing can be obtained on PET substrate before its deformation in mild thermal annealing process. Flexible PFETs based on PNBDOPV-DTBT fabricated on PET substrates exhibit high and well-balanced hole/electron mobilities of 4.68/4.72 cm2 V-1 s-1 under ambient conditions. After the further modification of Au source/drain electrodes with 1-octanethiol self-assembled monolayers, impressively high and well-balanced hole/electron mobilities up to 5.97/7.07 cm2 V-1 s-1 are achieved in the flexible PFETs. Meanwhile, flexible complementary-like inverters based on PNBDOPV-DTBT on PET substrate also afford a much high gain of 148. The device performances of both the PFETs and inverters are among the highest values for ambipolar conjugated polymers reported to date.
Collapse
Affiliation(s)
- Keli Shi
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Weifeng Zhang
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Dong Gao
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Shiying Zhang
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zuzhang Lin
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Ye Zou
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Liping Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, Organic Solids Laboratory, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| |
Collapse
|
12
|
Kim RH, Lee J, Kim KL, Cho SM, Kim DH, Park C. Flexible Nonvolatile Transistor Memory with Solution-Processed Transition Metal Dichalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13. [PMID: 28371305 DOI: 10.1002/smll.201603971] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2016] [Revised: 01/23/2017] [Indexed: 05/11/2023]
Abstract
Nonvolatile field-effect transistor (FET) memories containing transition metal dichalcogenide (TMD) nanosheets have been recently developed with great interest by utilizing some of the intriguing photoelectronic properties of TMDs. The TMD nanosheets are, however, employed as semiconducting channels in most of the memories, and only a few works address their function as floating gates. Here, a floating-gate organic-FET memory with an all-in-one floating-gate/tunneling layer of the solution-processed TMD nanosheets is demonstrated. Molybdenum disulfide (MoS2 ) is efficiently liquid-exfoliated by amine-terminated polystyrene with a controlled amount of MoS2 nanosheets in an all-in-one floating-gate/tunneling layer, allowing for systematic investigation of concentration-dependent charge-trapping and detrapping properties of MoS2 nanosheets. At an optimized condition, the nonvolatile memory exhibits memory performances with an ON/OFF ratio greater than 104 , a program/erase endurance cycle over 400 times, and data retention longer than 7 × 103 s. All-in-one floating-gate/tunneling layers containing molybdenum diselenide and tungsten disulfide are also developed. Furthermore, a mechanically-flexible TMD memory on a plastic substrate shows a performance comparable with that on a hard substrate, and the memory properties are rarely altered after outer-bending events over 500 times at the bending radius of 4.0 mm.
Collapse
Affiliation(s)
- Richard Hahnkee Kim
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Jinseong Lee
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Kang Lib Kim
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Suk Man Cho
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Dong Ha Kim
- Department of Chemistry and Nano Science, Division of Molecular and Life Sciences, College of Natural Sciences, Ewha Womans University, 52, Ewhayeodae-gil, Seodaemun-gu, Seoul, 03760, Republic of Korea
| | - Cheolmin Park
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| |
Collapse
|
13
|
Jeong YJ, Yun DJ, Kim SH, Jang J, Park CE. Photoinduced Recovery of Organic Transistor Memories with Photoactive Floating-Gate Interlayers. ACS APPLIED MATERIALS & INTERFACES 2017; 9:11759-11769. [PMID: 28287701 DOI: 10.1021/acsami.7b02365] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Optical memories based on photoresponsive organic field-effect transistors (OFETs) are of great interest due to their unique applications, such as multibit storage memories and flexible imaging circuits. Most studies of OFET-type memories have focused on the photoresponsive active channels, but more useful functions can be additionally given to the devices by using floating gates that can absorb light. In this case, effects of photoirradiation on photoactive floating-gate layers need to be fully understood. Herein, we studied the photoinduced erasing effects of floating-gate interlayers on the electrical responses of OFET-type memories and considered the possible mechanisms. Polymer/C60 composites were inserted between pentacene and SiO2 to form photoresponsive floating-gate interlayers in transistor memory. When exposed to light, C60 generated excitons, and these photoexcited carriers contributed to the elimination of trapped charge carriers, which resulted in the recovery of OFET performance. Such memory devices exhibited bistable current states controlled with voltage-driven programming and light-driven erasure. Furthermore, these devices maintained their charge-storing properties over 10 000 s. This proof-of-concept study is expected to open up new avenues in information technology for the development of organic memories that exhibit photoinduced recovery over a wide range of wavelengths of light when combined with appropriate photoactive floating-gate materials.
Collapse
Affiliation(s)
- Yong Jin Jeong
- Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology , Pohang 37673, Republic of Korea
| | - Dong-Jin Yun
- Analytical Science Laboratory, Samsung Advanced Institute of Technology (SAIT) , Suwon 16678, Republic of Korea
| | - Se Hyun Kim
- School of Chemical Engineering, Yeungnam University , Gyeongsan, North Gyeongsang 712-749, Republic of Korea
| | - Jaeyoung Jang
- Department of Energy Engineering, Hanyang University , Seoul 133-791, Republic of Korea
| | - Chan Eon Park
- Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology , Pohang 37673, Republic of Korea
| |
Collapse
|
14
|
Wang W, Kim KL, Cho SM, Lee JH, Park C. Nonvolatile Transistor Memory with Self-Assembled Semiconducting Polymer Nanodomain Floating Gates. ACS APPLIED MATERIALS & INTERFACES 2016; 8:33863-33873. [PMID: 27960399 DOI: 10.1021/acsami.6b12376] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Organic field effect transistor based nonvolatile memory (OFET-NVM) with semiconducting nanofloating gates offers additional benefits over OFET-NVMs with conventional metallic floating gates due to the facile controllability of charge storage based on the energetic structure of the floating gate. In particular, an all-in-one tunneling and floating-gate layer in which the semiconducting polymer nanodomains are self-assembled in the dielectric tunneling layer is promising. In this study, we utilize crystals of a p-type semiconducting polymer in which the crystalline lamellae of the polymer are spontaneously developed and embedded in the tunneling matrix as the nanofloating gate. The widths and lengths of the polymer nanodomains are approximately 20 nm and a few hundred nanometers, respectively. An OFET-NVM containing the crystalline nanofloating gates exhibits memory performance with a large memory window of 10 V, programming/erasing switching endurance for over 500 cycles, and a long retention time of 5000 s. Moreover, the device performance is improved by comixing with an n-type semiconductor; thus, the solution-processed p- and n-type double floating gates capable of storing both holes and electrons allow for the multilevel operation of our OFET-NVM. Four highly reliable levels (two bits per cell) of charge trapping and detrapping are achieved using this OFET-NVM by accurately choosing the programming/erasing voltages.
Collapse
Affiliation(s)
- Wei Wang
- Department of Materials Science and Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749 Republic of Korea
| | - Kang Lib Kim
- Department of Materials Science and Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749 Republic of Korea
| | - Suk Man Cho
- Department of Materials Science and Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749 Republic of Korea
| | - Ju Han Lee
- Department of Materials Science and Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749 Republic of Korea
| | - Cheolmin Park
- Department of Materials Science and Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749 Republic of Korea
| |
Collapse
|
15
|
Ling H, Lin J, Yi M, Liu B, Li W, Lin Z, Xie L, Bao Y, Guo F, Huang W. Synergistic Effects of Self-Doped Nanostructures as Charge Trapping Elements in Organic Field Effect Transistor Memory. ACS APPLIED MATERIALS & INTERFACES 2016; 8:18969-18977. [PMID: 27363281 DOI: 10.1021/acsami.6b03792] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Despite remarkable advances in the development of organic field-effect transistor (OFET) memories over recent years, the charge trapping elements remain confined to the critical electrets of polymers, nanoparticles, or ferroelectrics. Nevertheless, rare reports are available on the complementary advantages of different types of trapping elements integrated in one single OFET memory. To address this issue, we fabricated two kinds of pentacene-based OFET memories with solution-processed amorphous and β-phase poly(9,9-dioctylfluorene) (PFO) films as charge trapping layers, respectively. Compared to the amorphous film, the β-PFO film has self-doped nanostructures (20-120 nm) and could act as natural charge trapping elements, demonstrating the synergistic effects of combining both merits of polymer and nanoparticles into one electret. Consequently, the OFET memory with β-PFO showed nearly 26% increment in the storage capacity and a pronounced memory window of ∼45 V in 20 ms programming time. Besides, the retention time of β-PFO device extended 2 times to maintain an ON/OFF current ratio of 10(3), indicating high bias-stress reliability. Furthermore, the β-PFO device demonstrated good photosensitivity in the 430-700 nm range, which was attributed to the additive effect of smaller bandgap and self-doped nanostructures of β-phase. In this regard, the tuning of molecular conformation and aggregation in a polymer electret is an effective strategy to obtain a high performance OFET memory.
Collapse
Affiliation(s)
- Haifeng Ling
- Center for Molecular Systems and Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT) , 9 Wenyuan Road, Nanjing 210023, China
| | - Jinyi Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech) , 30 South Puzhu Road, Nanjing 211816, China
| | - Mingdong Yi
- Center for Molecular Systems and Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT) , 9 Wenyuan Road, Nanjing 210023, China
| | - Bin Liu
- Center for Molecular Systems and Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT) , 9 Wenyuan Road, Nanjing 210023, China
| | - Wen Li
- Center for Molecular Systems and Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT) , 9 Wenyuan Road, Nanjing 210023, China
| | - Zongqiong Lin
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech) , 30 South Puzhu Road, Nanjing 211816, China
| | - Linghai Xie
- Center for Molecular Systems and Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT) , 9 Wenyuan Road, Nanjing 210023, China
| | - Yan Bao
- Center for Molecular Systems and Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT) , 9 Wenyuan Road, Nanjing 210023, China
| | - Fengning Guo
- Center for Molecular Systems and Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT) , 9 Wenyuan Road, Nanjing 210023, China
| | - Wei Huang
- Center for Molecular Systems and Organic Devices (CMSOD), Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications (NUPT) , 9 Wenyuan Road, Nanjing 210023, China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech) , 30 South Puzhu Road, Nanjing 211816, China
| |
Collapse
|
16
|
Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics. ELECTRONICS 2015. [DOI: 10.3390/electronics4030424] [Citation(s) in RCA: 104] [Impact Index Per Article: 11.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
|
17
|
Wang W, Hwang SK, Kim KL, Lee JH, Cho SM, Park C. Highly reliable top-gated thin-film transistor memory with semiconducting, tunneling, charge-trapping, and blocking layers all of flexible polymers. ACS APPLIED MATERIALS & INTERFACES 2015; 7:10957-10965. [PMID: 25943406 DOI: 10.1021/acsami.5b02213] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The core components of a floating-gate organic thin-film transistor nonvolatile memory (OTFT-NVM) include the semiconducting channel layer, tunneling layer, floating-gate layer, and blocking layer, besides three terminal electrodes. In this study, we demonstrated OTFT-NVMs with all four constituent layers made of polymers based on consecutive spin-coating. Ambipolar charges injected and trapped in a polymer electret charge-controlling layer upon gate program and erase field successfully allowed for reliable bistable channel current levels at zero gate voltage. We have observed that the memory performance, in particular the reliability of a device, significantly depends upon the thickness of both blocking and tunneling layers, and with an optimized layer thickness and materials selection, our device exhibits a memory window of 15.4 V, on/off current ratio of 2 × 10(4), read and write endurance cycles over 100, and time-dependent data retention of 10(8) s, even when fabricated on a mechanically flexible plastic substrate.
Collapse
Affiliation(s)
- Wei Wang
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Sun Kak Hwang
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Kang Lib Kim
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Ju Han Lee
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Suk Man Cho
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| | - Cheolmin Park
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea
| |
Collapse
|
18
|
Hwang SK, Park TJ, Kim KL, Cho SM, Jeong BJ, Park C. Organic one-transistor-type nonvolatile memory gated with thin ionic liquid-polymer film for low voltage operation. ACS APPLIED MATERIALS & INTERFACES 2014; 6:20179-20187. [PMID: 25341965 DOI: 10.1021/am505750v] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
As one of the most emerging next-generation nonvolatile memories, one-transistor (1T)-type nonvolatile memories are of great attention due to their excellent memory performance and simple device architecture suitable for high density memory arrays. In particular, organic 1T-type memories containing both organic semiconductors and insulators are further beneficial because of their mechanical flexibility with low cost fabrication. Here, we demonstrate a new flexible organic 1T-type memory operating at low voltage. The low voltage operation of a memory less than 10 V was obtained by employing a polymer gate insulator solution blended with ionic liquid as a charge storage layer. Ionic liquid homogeneously dissolved in a thin poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film gave rise to low voltage operation of a device due to its high capacitance. Simultaneously, stable charge trapping of either anions or cations efficiently occurred in the polymer matrix, dependent upon gate bias. Optimization of ionic liquid in PVDF-TrFE thus led to an air-stable and mechanically flexible organic 1T-type nonvolatile memory operating at programming voltage of ±7 V with large ON/OFF current margin of approximately 10(3), reliable time-dependent data retention of more than 10(4) seconds, and write/read endurance cycles of 80.
Collapse
Affiliation(s)
- Sun Kak Hwang
- Department of Materials Science and Engineering, Yonsei University , 134 Shinchon-dong, Seodaemoon-gu, Seoul 120749, Republic of Korea
| | | | | | | | | | | |
Collapse
|