1
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Xue G, Qin B, Ma C, Yin P, Liu C, Liu K. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chem Rev 2024. [PMID: 39132950 DOI: 10.1021/acs.chemrev.3c00851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Over the past decade, research on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high carrier mobility, significant excitonic effects, and strong spin-orbit couplings. Considerable attention from both scientific and industrial communities has fully fueled the exploration of TMDs toward practical applications. Proposed scenarios, such as ultrascaled transistors, on-chip photonics, flexible optoelectronics, and efficient electrocatalysis, critically depend on the scalable production of large-area TMD films. Correspondingly, substantial efforts have been devoted to refining the synthesizing methodology of 2D TMDs, which brought the field to a stage that necessitates a comprehensive summary. In this Review, we give a systematic overview of the basic designs and significant advancements in large-area epitaxial growth of TMDs. We first sketch out their fundamental structures and diverse properties. Subsequent discussion encompasses the state-of-the-art wafer-scale production designs, single-crystal epitaxial strategies, and techniques for structure modification and postprocessing. Additionally, we highlight the future directions for application-driven material fabrication and persistent challenges, aiming to inspire ongoing exploration along a revolution in the modern semiconductor industry.
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Affiliation(s)
- Guodong Xue
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Chaojie Ma
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Peng Yin
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Can Liu
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Department of Physics, Renmin University of China, Beijing 100872, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing 100871, China
- Songshan Lake Materials Laboratory, Dongguan 523808, China
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2
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Sharma R, Nameirakpam H, Belinchón DM, Sharma P, Noumbe U, Belotcerkovtceva D, Berggren E, Vretenár V, Vanco L, Matko M, Biroju RK, Satapathi S, Edvinsson T, Lindblad A, Kamalakar MV. Large-Scale Direct Growth of Monolayer MoS 2 on Patterned Graphene for van der Waals Ultrafast Photoactive Circuits. ACS APPLIED MATERIALS & INTERFACES 2024; 16:38711-38722. [PMID: 38995218 DOI: 10.1021/acsami.4c07028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/13/2024]
Abstract
Two-dimensional (2D) van der Waals heterostructures combine the distinct properties of individual 2D materials, resulting in metamaterials, ideal for emergent electronic, optoelectronic, and spintronic phenomena. A significant challenge in harnessing these properties for future hybrid circuits is their large-scale realization and integration into graphene interconnects. In this work, we demonstrate the direct growth of molybdenum disulfide (MoS2) crystals on patterned graphene channels. By enhancing control over vapor transport through a confined space chemical vapor deposition growth technique, we achieve the preferential deposition of monolayer MoS2 crystals on monolayer graphene. Atomic resolution scanning transmission electron microscopy reveals the high structural integrity of the heterostructures. Through in-depth spectroscopic characterization, we unveil charge transfer in Graphene/MoS2, with MoS2 introducing p-type doping to graphene, as confirmed by our electrical measurements. Photoconductivity characterization shows that photoactive regions can be locally created in graphene channels covered by MoS2 layers. Time-resolved ultrafast transient absorption (TA) spectroscopy reveals accelerated charge decay kinetics in Graphene/MoS2 heterostructures compared to standalone MoS2 and upconversion for below band gap excitation conditions. Our proof-of-concept results pave the way for the direct growth of van der Waals heterostructure circuits with significant implications for ultrafast photoactive nanoelectronics and optospintronic applications.
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Affiliation(s)
- Rahul Sharma
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | - Henry Nameirakpam
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | | | - Prince Sharma
- Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India
| | - Ulrich Noumbe
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Daria Belotcerkovtceva
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | - Elin Berggren
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | - Viliam Vretenár
- Centre for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, Vazovova 5, Bratislava 812 43, Slovakia
| | - Lubomir Vanco
- Centre for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, Vazovova 5, Bratislava 812 43, Slovakia
| | - Matus Matko
- Centre for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, Vazovova 5, Bratislava 812 43, Slovakia
| | - Ravi K Biroju
- Centre for Nanodiagnostics of Materials, Faculty of Materials Science and Technology, Slovak University of Technology, Vazovova 5, Bratislava 812 43, Slovakia
- School of Advanced Sciences-Division of Physics, Vellore Institute of Technology, Vandalur-Kelambakkam Road Chennai, Chennai, Tamil Nadu 600127, India
| | - Soumitra Satapathi
- Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India
| | - Tomas Edvinsson
- Department of Materials Science and Engineering, Uppsala University, Box 35, Uppsala SE-751 03, Sweden
| | - Andreas Lindblad
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
| | - M Venkata Kamalakar
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala SE-751 20, Sweden
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3
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Sitek J, Czerniak-Łosiewicz K, Gertych AP, Giza M, Dąbrowski P, Rogala M, Wilczyński K, Kaleta A, Kret S, Conran BR, Wang X, McAleese C, Macha M, Radenović A, Zdrojek M, Pasternak I, Strupiński W. Selective Growth of van der Waals Heterostructures Enabled by Electron-Beam Irradiation. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37418753 PMCID: PMC10360032 DOI: 10.1021/acsami.3c02892] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/09/2023]
Abstract
Van der Waals heterostructures (vdWHSs) enable the fabrication of complex electronic devices based on two-dimensional (2D) materials. Ideally, these vdWHSs should be fabricated in a scalable and repeatable way and only in the specific areas of the substrate to lower the number of technological operations inducing defects and impurities. Here, we present a method of selective fabrication of vdWHSs via chemical vapor deposition by electron-beam (EB) irradiation. We distinguish two growth modes: positive (2D materials nucleate on the irradiated regions) on graphene and tungsten disulfide (WS2) substrates, and negative (2D materials do not nucleate on the irradiated regions) on the graphene substrate. The growth mode is controlled by limiting the air exposure of the irradiated substrate and the time between irradiation and growth. We conducted Raman mapping, Kelvin-probe force microscopy, X-ray photoelectron spectroscopy, and density-functional theory modeling studies to investigate the selective growth mechanism. We conclude that the selective growth is explained by the competition of three effects: EB-induced defects, adsorption of carbon species, and electrostatic interaction. The method here is a critical step toward the industry-scale fabrication of 2D-materials-based devices.
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Affiliation(s)
- Jakub Sitek
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
- CENTERA Laboratory, Institute for High Pressure Physics, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland
| | | | - Arkadiusz P Gertych
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Małgorzata Giza
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Paweł Dąbrowski
- Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
| | - Maciej Rogala
- Faculty of Physics and Applied Informatics, University of Łódź, Pomorska 149/153, 90-236 Łódź, Poland
| | - Konrad Wilczyński
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Anna Kaleta
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
| | - Sławomir Kret
- Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
| | - Ben R Conran
- AIXTRON Ltd, Buckingway Business Park, Anderson Road, Swavesey, Cambridge CB24 4FQ, U.K
| | - Xiaochen Wang
- AIXTRON Ltd, Buckingway Business Park, Anderson Road, Swavesey, Cambridge CB24 4FQ, U.K
| | - Clifford McAleese
- AIXTRON Ltd, Buckingway Business Park, Anderson Road, Swavesey, Cambridge CB24 4FQ, U.K
| | - Michał Macha
- Laboratory of Nanoscale Biology, Swiss Federal Institute of Technology Lausanne (EPFL), Station 17, CH-015 Lausanne, Switzerland
| | - Aleksandra Radenović
- Laboratory of Nanoscale Biology, Swiss Federal Institute of Technology Lausanne (EPFL), Station 17, CH-015 Lausanne, Switzerland
| | - Mariusz Zdrojek
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Iwona Pasternak
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Włodek Strupiński
- Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
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4
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Zhao Y, Song Y, Hu Z, Wang W, Chang Z, Zhang Y, Lu Q, Wu H, Liao J, Zou W, Gao X, Jia K, Zhuo L, Hu J, Xie Q, Zhang R, Wang X, Sun L, Li F, Zheng L, Wang M, Yang J, Mao B, Fang T, Wang F, Zhong H, Liu W, Yan R, Yin J, Zhang Y, Wei Y, Peng H, Lin L, Liu Z. Large-area transfer of two-dimensional materials free of cracks, contamination and wrinkles via controllable conformal contact. Nat Commun 2022; 13:4409. [PMID: 35906212 PMCID: PMC9338253 DOI: 10.1038/s41467-022-31887-z] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Accepted: 07/07/2022] [Indexed: 11/29/2022] Open
Abstract
The availability of graphene and other two-dimensional (2D) materials on a wide range of substrates forms the basis for large-area applications, such as graphene integration with silicon-based technologies, which requires graphene on silicon with outperforming carrier mobilities. However, 2D materials were only produced on limited archetypal substrates by chemical vapor deposition approaches. Reliable after-growth transfer techniques, that do not produce cracks, contamination, and wrinkles, are critical for layering 2D materials onto arbitrary substrates. Here we show that, by incorporating oxhydryl groups-containing volatile molecules, the supporting films can be deformed under heat to achieve a controllable conformal contact, enabling the large-area transfer of 2D films without cracks, contamination, and wrinkles. The resulting conformity with enhanced adhesion facilitates the direct delamination of supporting films from graphene, providing ultraclean surfaces and carrier mobilities up to 1,420,000 cm2 V−1 s−1 at 4 K. Reliable transfer techniques are critical for the integration of 2D materials with arbitrary substrates. Here, the authors describe a method to transfer 4-inch and A4-sized defect-free graphene films onto rigid and flexible substrates with controllable conformal contact, leading to improved electrical properties and uniformity.
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Affiliation(s)
- Yixuan Zhao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yuqing Song
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.,Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhaoning Hu
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Wendong Wang
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Zhenghua Chang
- LNM, Institute of Mechanics Chinese Academy of Sciences, Beijing, P. R. China.,School of Engineering Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yan Zhang
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Qi Lu
- Beijing Graphene Institute, Beijing, 100095, P. R. China.,State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing, 102249, P. R. China
| | - Haotian Wu
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Junhao Liao
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China.,CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Wentao Zou
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Xin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Kaicheng Jia
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - La Zhuo
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Qin Xie
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Rui Zhang
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Xiaorui Wang
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Luzhao Sun
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Fangfang Li
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Liming Zheng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Ming Wang
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Jiawei Yang
- Beijing Graphene Institute, Beijing, 100095, P. R. China.,Key Laboratory of Opto-Electronics Technology Ministry of Education College of Electronic Science and Technology Faculty of Information Technology, Beijing University of Technology, Beijing, 100190, P. R. China
| | - Boyang Mao
- Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Tiantian Fang
- Beijing National Laboratory for Molecular Sciences, National Centre for Mass Spectrometry in Beijing, CAS Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Fuyi Wang
- Beijing National Laboratory for Molecular Sciences, National Centre for Mass Spectrometry in Beijing, CAS Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Haotian Zhong
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Wenlin Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Rui Yan
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Jianbo Yin
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yujie Wei
- LNM, Institute of Mechanics Chinese Academy of Sciences, Beijing, P. R. China. .,School of Engineering Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China. .,Beijing Graphene Institute, Beijing, 100095, P. R. China. .,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China.
| | - Li Lin
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China.
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China. .,Beijing Graphene Institute, Beijing, 100095, P. R. China. .,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China.
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5
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Voroshnin V, Tarasov AV, Bokai KA, Chikina A, Senkovskiy BV, Ehlen N, Usachov DY, Grüneis A, Krivenkov M, Sánchez-Barriga J, Fedorov A. Direct Spectroscopic Evidence of Magnetic Proximity Effect in MoS 2 Monolayer on Graphene/Co. ACS NANO 2022; 16:7448-7456. [PMID: 35442015 DOI: 10.1021/acsnano.1c10391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A magnetic field modifies optical properties and provides valley splitting in a molybdenum disulfide (MoS2) monolayer. Here we demonstrate a scalable approach to the epitaxial synthesis of MoS2 monolayer on a magnetic graphene/Co system. Using spin- and angle-resolved photoemission spectroscopy we observe a magnetic proximity effect that causes a 20 meV spin-splitting at the Γ̅ point and canting of spins at the K̅ point in the valence band toward the in-plane direction of cobalt magnetization. Our density functional theory calculations reveal that the in-plane spin component at K̅ is localized on Co atoms in the valence band, while in the conduction band it is localized on the MoS2 layer. The calculations also predict a 16 meV spin-splitting at the Γ̅ point and 8 meV K̅-K'¯ valley asymmetry for an out-of-plane magnetization. These findings suggest control over optical transitions in MoS2 via Co magnetization. Our estimations show that the magnetic proximity effect is equivalent to the action of the magnetic field as large as 100 T.
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Affiliation(s)
- Vladimir Voroshnin
- Institut für Physik und Astronomie, Universität Potsdam, Karl-Liebknecht-Strasse 24/25, Potsdam 14476, Germany
| | - Artem V Tarasov
- St. Petersburg State University, St. Petersburg 198504, Russia
| | - Kirill A Bokai
- St. Petersburg State University, St. Petersburg 198504, Russia
| | - Alla Chikina
- Paul Scherrer Institute, Forschungsstrasse 111, Villigen PSI 5232, Switzerland
| | - Boris V Senkovskiy
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, Köln 50937, Germany
| | - Niels Ehlen
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, Köln 50937, Germany
| | | | - Alexander Grüneis
- II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, Köln 50937, Germany
| | - Maxim Krivenkov
- Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin 12489, Germany
| | | | - Alexander Fedorov
- IFW Dresden, Leibniz Institute for Solid State and Materials Research, D-01171, Dresden 01069, Germany
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6
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Mukherjee S, Bhattacharya D, Patra S, Paul S, Mitra RK, Mahadevan P, Pal AN, Ray SK. High-Responsivity Gate-Tunable Ultraviolet-Visible Broadband Phototransistor Based on Graphene-WS 2 Mixed-Dimensional (2D-0D) Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2022; 14:5775-5784. [PMID: 35068147 DOI: 10.1021/acsami.1c18999] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Recent progress in the synthesis of highly stable, eco-friendly, cost-effective transition-metal dichalcogenide (TMDC) quantum dots (QDs) with their broadband absorption spectra and wavelength selectivity features have led to their increasing use in broadband photodetectors. With the solution-based processing, we demonstrate a superlarge (∼0.75 mm2), ultraviolet-visible (UV-vis) broadband (365-633 nm) phototransistor made of WS2 QDs-decorated chemical vapor deposited (CVD) graphene as the active channel with extraordinary stability and durability under ambient conditions (without any degradation of photocurrent until 4 months after fabrication). Here, colloidal zero-dimensional (0D) WS2 QDs are used as the photoabsorbing material, and graphene acts as the conducting channel. A high photoresponsivity (3.1 × 102 A/W), moderately high detectivity (∼8.9 × 108 Jones), and low noise equivalent power (∼9.7 × 10-11 W/Hz0.5) are obtained at a low bias voltage (Vds = 1 V) at an illumination of 365 nm with optical power as low as ∼0.8 μW/cm2, which can be further tuned by modulating the gate bias. While comparing the photocurrent between two different morphologies of WS2 [QDs and two-dimensional (2D) nanosheets], a significant enhancement of photocurrent is observed in the case of QD-based devices. Ab initio density functional theory (DFT)-based calculations further support our observation, revealing the role of quantum confinement in enhanced photoresponse. Our work reveals a strategy toward developing a scalable, cost-effective, high-performance hybrid mixed-dimensional (2D-0D) photodetector with graphene-WS2 QDs for next-generation optoelectronic applications.
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Affiliation(s)
- Shubhrasish Mukherjee
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Didhiti Bhattacharya
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Sumanti Patra
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Sanjukta Paul
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Rajib Kumar Mitra
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Priya Mahadevan
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Atindra Nath Pal
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Samit Kumar Ray
- S. N. Bose National Center for Basic Science, Sector III, Block JD, Salt Lake, Kolkata 700106, India
- Indian Institute of Technology Kharagpur, 721302 West Bengal, India
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7
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Lee Y, Lee J, Chung H, Kim J, Lee Z. In Situ Scanning Transmission Electron Microscopy Study of MoS 2 Formation on Graphene with a Deep-Learning Framework. ACS OMEGA 2021; 6:21623-21630. [PMID: 34471766 PMCID: PMC8388093 DOI: 10.1021/acsomega.1c03002] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/08/2021] [Accepted: 08/02/2021] [Indexed: 06/13/2023]
Abstract
Atomic-scale information is essential for understanding and designing unique structures and properties of two-dimensional (2D) materials. Recent developments in in situ transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) enable research to provide abundant insights into the growth of nanomaterials. In this study, 2D MoS2 is synthesized on a suspended graphene substrate inside a TEM column through thermolysis of the ammonium tetrathiomolybdate (NH4)2MoS4 precursor at 500 °C. To avoid misinterpretation of the in situ STEM images, a deep-learning framework, DeepSTEM, is developed. The DeepSTEM framework successfully reconstructs an object function in atomic-resolution STEM imaging for accurate determination of the atomic structure and dynamic analysis. In situ STEM imaging with DeepSTEM enables observation of the edge configuration, formation, and reknitting progress of MoS2 clusters with the formation of a mirror twin boundary. The synthesized MoS2/graphene heterostructure shows various twist angles, as revealed by atomic-resolution TEM. This deep-learning framework-assisted in situ STEM imaging provides atomic information for in-depth studies on the growth and structure of 2D materials and shows the potential use of deep-learning techniques in 2D material research.
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Affiliation(s)
- Yeongdong Lee
- Center
for Multidimensional Carbon Materials, Institute
for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jongyeong Lee
- Center
for Multidimensional Carbon Materials, Institute
for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Handolsam Chung
- Center
for Multidimensional Carbon Materials, Institute
for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jaemin Kim
- Center
for Multidimensional Carbon Materials, Institute
for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Zonghoon Lee
- Center
for Multidimensional Carbon Materials, Institute
for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department
of Materials Science and Engineering, Ulsan
National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
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8
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Li J, Wang S, Jiang Q, Qian H, Hu S, Kang H, Chen C, Zhan X, Yu A, Zhao S, Zhang Y, Chen Z, Sui Y, Qiao S, Yu G, Peng S, Jin Z, Liu X. Single-Crystal MoS 2 Monolayer Wafer Grown on Au (111) Film Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100743. [PMID: 34145739 DOI: 10.1002/smll.202100743] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2021] [Revised: 03/11/2021] [Indexed: 06/12/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next-generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS2 (SC-MoS2 ) monolayer is reported on Au (111) film across a two-inch c-plane sapphire wafer by CVD. The MoS2 domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS2 domains on Au (111) is a temperature-guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS2 seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS2 domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.
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Affiliation(s)
- Jing Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shuang Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qi Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoji Qian
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shike Hu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - He Kang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Chen Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaoyi Zhan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Aobo Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Sunwen Zhao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yanhui Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Zhiying Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yanping Sui
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Shan Qiao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Guanghui Yu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Songang Peng
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Zhi Jin
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Xinyu Liu
- Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
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9
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Portone A, Bellucci L, Convertino D, Mezzadri F, Piccinini G, Giambra MA, Miseikis V, Rossi F, Coletti C, Fabbri F. Deterministic synthesis of Cu 9S 5 flakes assisted by single-layer graphene arrays. NANOSCALE ADVANCES 2021; 3:1352-1361. [PMID: 36132865 PMCID: PMC9419617 DOI: 10.1039/d0na00997k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2020] [Accepted: 02/01/2021] [Indexed: 06/15/2023]
Abstract
The employment of two-dimensional materials, as growth substrates or buffer layers, enables the epitaxial growth of layered materials with different crystalline symmetries with a preferential crystalline orientation and the synthesis of heterostructures with a large lattice constant mismatch. In this work, we employ single crystalline graphene to modify the sulfurization dynamics of copper foil for the deterministic synthesis of large-area Cu9S5 crystals. Molecular dynamics simulations using the Reax force-field are used to mimic the sulfurization process of a series of different atomistic systems specifically built to understand the role of graphene during the sulphur atom attack over the Cu(111) surface. Cu9S5 flakes show a flat morphology with an average lateral size of hundreds of micrometers. Cu9S5 presents a direct band-gap of 2.5 eV evaluated with light absorption and light emission spectroscopies. Electrical characterization shows that the Cu9S5 crystals present high p-type doping with a hole mobility of 2 cm2 V-1 s-1.
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Affiliation(s)
- A Portone
- NEST, Istituto Nanoscienze - CNR, Scuola Normale Superiore Piazza San Silvestro 12 56127 Pisa Italy
| | - L Bellucci
- NEST, Istituto Nanoscienze - CNR, Scuola Normale Superiore Piazza San Silvestro 12 56127 Pisa Italy
| | - D Convertino
- CNI@NEST, Istituto Italiano di Tecnologia Piazza San Silvestro 12 56127 Pisa Italy
- Graphene Labs, Istituto Italiano di Tecnologia Via Morego 30 16163 Genova Italy
| | - F Mezzadri
- IMEM-CNR Parco Area delle Scienze 37/a Parma 43124 Italy
- Department of Chemistry, Life Sciences and Environmental Sustainability, University of Parma Parco Area delle Scienze 11/A 43124 Parma Italy
| | - G Piccinini
- CNI@NEST, Istituto Italiano di Tecnologia Piazza San Silvestro 12 56127 Pisa Italy
- Scuola Normale Superiore Piazza San Silvestro 12 56127 Pisa Italy
| | - M A Giambra
- CNIT, Sant'Anna Via G. Moruzzi 1 Pisa 56124 Italy
| | - V Miseikis
- CNI@NEST, Istituto Italiano di Tecnologia Piazza San Silvestro 12 56127 Pisa Italy
- Graphene Labs, Istituto Italiano di Tecnologia Via Morego 30 16163 Genova Italy
| | - F Rossi
- IMEM-CNR Parco Area delle Scienze 37/a Parma 43124 Italy
| | - C Coletti
- CNI@NEST, Istituto Italiano di Tecnologia Piazza San Silvestro 12 56127 Pisa Italy
- Graphene Labs, Istituto Italiano di Tecnologia Via Morego 30 16163 Genova Italy
| | - F Fabbri
- NEST, Istituto Nanoscienze - CNR, Scuola Normale Superiore Piazza San Silvestro 12 56127 Pisa Italy
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10
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Chubarov M, Choudhury TH, Hickey DR, Bachu S, Zhang T, Sebastian A, Bansal A, Zhu H, Trainor N, Das S, Terrones M, Alem N, Redwing JM. Wafer-Scale Epitaxial Growth of Unidirectional WS 2 Monolayers on Sapphire. ACS NANO 2021; 15:2532-2541. [PMID: 33450158 DOI: 10.1021/acsnano.0c06750] [Citation(s) in RCA: 83] [Impact Index Per Article: 27.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Realization of wafer-scale single-crystal films of transition metal dichalcogenides (TMDs) such as WS2 requires epitaxial growth and coalescence of oriented domains to form a continuous monolayer. The domains must be oriented in the same crystallographic direction on the substrate to inhibit the formation of inversion domain boundaries (IDBs), which are a common feature of layered chalcogenides. Here we demonstrate fully coalesced unidirectional WS2 monolayers on 2 in. diameter c-plane sapphire by metalorganic chemical vapor deposition using a multistep growth process to achieve epitaxial WS2 monolayers with low in-plane rotational twist (0.09°). Transmission electron microscopy analysis reveals that the WS2 monolayers are largely free of IDBs but instead have translational boundaries that arise when WS2 domains with slightly offset lattices merge together. By regulating the monolayer growth rate, the density of translational boundaries and bilayer coverage were significantly reduced. The unidirectional orientation of domains is attributed to the presence of steps on the sapphire surface coupled with growth conditions that promote surface diffusion, lateral domain growth, and coalescence while preserving the aligned domain structure. The transferred WS2 monolayers show neutral and charged exciton emission at 80 K with negligible defect-related luminescence. Back-gated WS2 field effect transistors exhibited an ION/OFF of ∼107 and mobility of 16 cm2/(V s). The results demonstrate the potential of achieving wafer-scale TMD monolayers free of inversion domains with properties approaching those of exfoliated flakes.
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Affiliation(s)
- Mikhail Chubarov
- 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP), Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tanushree H Choudhury
- 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP), Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Danielle Reifsnyder Hickey
- 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP), Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Saiphaneendra Bachu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tianyi Zhang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Amritanand Sebastian
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Anushka Bansal
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Haoyue Zhu
- 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP), Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nicholas Trainor
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Saptarshi Das
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Mauricio Terrones
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Nasim Alem
- 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP), Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joan M Redwing
- 2D Crystal Consortium-Materials Innovation Platform (2DCC-MIP), Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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11
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Agrawal AV, Kumar N, Kumar M. Strategy and Future Prospects to Develop Room-Temperature-Recoverable NO 2 Gas Sensor Based on Two-Dimensional Molybdenum Disulfide. NANO-MICRO LETTERS 2021; 13:38. [PMID: 33425474 PMCID: PMC7780921 DOI: 10.1007/s40820-020-00558-3] [Citation(s) in RCA: 36] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/26/2020] [Accepted: 10/29/2020] [Indexed: 05/12/2023]
Abstract
Nitrogen dioxide (NO2), a hazardous gas with acidic nature, is continuously being liberated in the atmosphere due to human activity. The NO2 sensors based on traditional materials have limitations of high-temperature requirements, slow recovery, and performance degradation under harsh environmental conditions. These limitations of traditional materials are forcing the scientific community to discover future alternative NO2 sensitive materials. Molybdenum disulfide (MoS2) has emerged as a potential candidate for developing next-generation NO2 gas sensors. MoS2 has a large surface area for NO2 molecules adsorption with controllable morphologies, facile integration with other materials and compatibility with internet of things (IoT) devices. The aim of this review is to provide a detailed overview of the fabrication of MoS2 chemiresistance sensors in terms of devices (resistor and transistor), layer thickness, morphology control, defect tailoring, heterostructure, metal nanoparticle doping, and through light illumination. Moreover, the experimental and theoretical aspects used in designing MoS2-based NO2 sensors are also discussed extensively. Finally, the review concludes the challenges and future perspectives to further enhance the gas-sensing performance of MoS2. Understanding and addressing these issues are expected to yield the development of highly reliable and industry standard chemiresistance NO2 gas sensors for environmental monitoring.
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Affiliation(s)
- Abhay V. Agrawal
- Functional and Renewable Energy Materials Laboratory, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001 India
| | - Naveen Kumar
- Functional and Renewable Energy Materials Laboratory, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001 India
| | - Mukesh Kumar
- Functional and Renewable Energy Materials Laboratory, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001 India
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12
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Sitek J, Plocharski J, Pasternak I, Gertych AP, McAleese C, Conran BR, Zdrojek M, Strupinski W. Substrate-Induced Variances in Morphological and Structural Properties of MoS 2 Grown by Chemical Vapor Deposition on Epitaxial Graphene and SiO 2. ACS APPLIED MATERIALS & INTERFACES 2020; 12:45101-45110. [PMID: 32930568 PMCID: PMC7584339 DOI: 10.1021/acsami.0c06173] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/03/2020] [Accepted: 09/15/2020] [Indexed: 06/11/2023]
Abstract
In this work, we report the impact of substrate type on the morphological and structural properties of molybdenum disulfide (MoS2) grown by chemical vapor deposition (CVD). MoS2 synthesized on a three-dimensional (3D) substrate, that is, SiO2, in response to the change of the thermodynamic conditions yielded different grain morphologies, including triangles, truncated triangles, and circles. Simultaneously, MoS2 on graphene is highly immune to the modifications of the growth conditions, forming triangular crystals only. We explain the differences between MoS2 on SiO2 and graphene by the different surface diffusion mechanisms, namely, hopping and gas-molecule-collision-like mechanisms, respectively. As a result, we observe the formation of thermodynamically favorable nuclei shapes on graphene, while on SiO2, a full spectrum of domain shapes can be achieved. Additionally, graphene withstands the growth process well, with only slight changes in strain and doping. Furthermore, by the application of graphene as a growth substrate, we realize van der Waals epitaxy and achieve strain-free growth, as suggested by the photoluminescence (PL) studies. We indicate that PL, contrary to Raman spectroscopy, enables us to arbitrarily determine the strain levels in MoS2.
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Affiliation(s)
- Jakub Sitek
- Faculty
of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Janusz Plocharski
- Faculty
of Chemistry, Warsaw University of Technology, Noakowskiego 3, 00-664 Warsaw, Poland
| | - Iwona Pasternak
- Faculty
of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Arkadiusz P. Gertych
- Faculty
of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Clifford McAleese
- AIXTRON
Ltd., Buckingway Business
Park, Anderson Road, Swavesey CB24 4FQ, United Kingdom
| | - Ben R. Conran
- AIXTRON
Ltd., Buckingway Business
Park, Anderson Road, Swavesey CB24 4FQ, United Kingdom
| | - Mariusz Zdrojek
- Faculty
of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
| | - Wlodek Strupinski
- Faculty
of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland
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13
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Dai TJ, Chen YQ, Zhou ZY, Sun J, Peng XS, Liu XZ. Two-dimensional MoSe2/graphene heterostructure thin film with wafer-scale continuity via van der Waals epitaxy. Chem Phys Lett 2020. [DOI: 10.1016/j.cplett.2020.137762] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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14
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Tang L, Li T, Luo Y, Feng S, Cai Z, Zhang H, Liu B, Cheng HM. Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides. ACS NANO 2020; 14:4646-4653. [PMID: 32299213 DOI: 10.1021/acsnano.0c00296] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in controlling concentrations of solid precursors and spatially nonuniform growth dynamics, it is challenging to grow 2D TMDCs over large areas with good uniformity and reproducibility so far, which significantly hinders their practical use. Here we report a vertical chemical vapor deposition (VCVD) design with gaseous precursors to grow monolayer TMDCs with a uniform density and high quality over the whole substrate and with excellent reproducibility. Such a gaseous VCVD design can well control the three key parameters in TMDC growth, including precursor concentration, gas flow, and temperature, which cannot be done in a currently widely used horizontal CVD system with solid precursors. Statistical results show that VCVD-grown monolayer TMDCs including MoS2 and WS2 are of high uniformity and quality on substrates over centimeter size. We also fabricated multiple van der Waals heterostructures by one-step transfer of VCVD-grown TMDCs, owning to their good uniformity. This work sheds light on the growth of 2D materials with high uniformity on a large-area substrate, which can be used for the wafer-scale fabrication of 2D materials and their heterostructures.
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Affiliation(s)
- Lei Tang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Tao Li
- Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yuting Luo
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Simin Feng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Zhengyang Cai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Hang Zhang
- Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
- Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, Liaoning 110016, P. R. China
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15
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Ma Z, Wang S, Deng Q, Hou Z, Zhou X, Li X, Cui F, Si H, Zhai T, Xu H. Epitaxial Growth of Rectangle Shape MoS 2 with Highly Aligned Orientation on Twofold Symmetry a-Plane Sapphire. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2000596. [PMID: 32162833 DOI: 10.1002/smll.202000596] [Citation(s) in RCA: 28] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2020] [Revised: 02/19/2020] [Accepted: 02/28/2020] [Indexed: 06/10/2023]
Abstract
Research on transition metal dichalcogenides (TMDs) has been accelerated by the development of large-scale synthesis based on chemical vapor deposition (CVD) growth. However, in most cases, CVD-grown TMDs are composed of randomly oriented grains, and thus contain many distorted grain boundaries (GBs), which seriously degrade their electrical and photoelectrical properties. Here, the epitaxial growth of highly aligned MoS2 grains is reported on a twofold symmetry a-plane sapphire substrate. The obtained MoS2 grains have an unusual rectangle shape with perfect orientation alignment along the [1-100] crystallographic direction of a-plane sapphire. It is found that the growth temperature plays a key role in its orientation alignment and morphology evolution, and high temperature is beneficial to the initial MoS2 seeds rotate to the favorable orientation configurations. In addition, the photoluminescence quenching of the well-aligned MoS2 grains indicates a strong MoS2 -substrate interaction which induces the anisotropic growth of MoS2 , and thus brings the formation of rectangle shape grains. Moreover, the well-aligned MoS2 grains splice together without GB formation, and thus that has negligible effect on its electrical transport properties. The progress achieved in this work could promote the controlled synthesis of large-area TMDs single crystal film and the scalable fabrication of high-performance electronic devices.
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Affiliation(s)
- Zongpeng Ma
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Shiyao Wang
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Qixin Deng
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
- School of Materials Science and Engineering, Shijiazhuang Tiedao University, Shijiazhuang, 050043, P. R. China
| | - Zhufeng Hou
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Xing Zhou
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xiaobo Li
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Fangfang Cui
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Huayan Si
- School of Materials Science and Engineering, Shijiazhuang Tiedao University, Shijiazhuang, 050043, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
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16
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Jalali M, Moakhar RS, Abdelfattah T, Filine E, Mahshid SS, Mahshid S. Nanopattern-Assisted Direct Growth of Peony-like 3D MoS 2/Au Composite for Nonenzymatic Photoelectrochemical Sensing. ACS APPLIED MATERIALS & INTERFACES 2020; 12:7411-7422. [PMID: 31922713 DOI: 10.1021/acsami.9b17449] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
The chalcogenide material MoS2 has been recognized as a promising candidate for photoelectrochemical (PEC) applications due to its enhanced photocatalytic and electrocatalytic activities. However, few reports have been focused on the designated catalytic MoS2 for the nonenzymatic PEC sensing of small molecules. Here, we report on a novel in situ and fab-free method for the direct growth of three-dimensional (3D) porous Peony-like MoS2 nanosheets supported by nanohole-patterned TiO2 and composited with gold deposits. The direct growth resulted in enhanced electrical conductivity between the substrate and 3D-standing MoS2 nanosheets and thus the uniform distribution of gold electrodeposits from the MoS2 lattice. The hybrid 3D MoS2/gold nanocomposite demonstrated enhanced abundance of exposed catalytic edge sites and improved optic and electrical coupling, which ultimately led to excellent photoelectrochemical activities. We performed full characterization of the morphology, crystallinity, lattice configuration, and optical properties of hybrid MoS2 nanosheets via field emission scanning microscope, high-resolution transmission electron microscopy, and energy-dispersive X-ray, Raman, and UV-vis spectroscopies. The 3D COMSOL simulation also confirmed enhanced electric field distribution at the interface of the proposed 3D MoS2/gold nanocomposite electrode in comparison with other morphologies. We acquired the Peony-like 3D MoS2/Au composite for photoelectrochemical sensing of glucose in buffer and diluted plasma solutions with a very low limit of detection of 1.3 nM and superb sensitivity in plasma. Overall, we have successfully synergized both electrical and optical merits from individual components to form a novel composite, which offered an effective scaffold for the development of PEC sensors.
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Affiliation(s)
- Mahsa Jalali
- Department of Bioengineering , McGill University , Montreal , QC H3A 0E9 , Canada
| | | | - Tamer Abdelfattah
- Department of Bioengineering , McGill University , Montreal , QC H3A 0E9 , Canada
| | - Elizabeth Filine
- Department of Bioengineering , McGill University , Montreal , QC H3A 0E9 , Canada
| | - Sahar Sadat Mahshid
- Biological Sciences, Sunnybrook Research Institute , Sunnybrook Health Sciences Centre , Toronto , ON M4N 3M5 , Canada
| | - Sara Mahshid
- Department of Bioengineering , McGill University , Montreal , QC H3A 0E9 , Canada
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17
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Erkılıç U, Solís-Fernández P, Ji HG, Shinokita K, Lin YC, Maruyama M, Suenaga K, Okada S, Matsuda K, Ago H. Vapor Phase Selective Growth of Two-Dimensional Perovskite/WS 2 Heterostructures for Optoelectronic Applications. ACS APPLIED MATERIALS & INTERFACES 2019; 11:40503-40511. [PMID: 31589816 DOI: 10.1021/acsami.9b13904] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Organic-inorganic hybrid perovskites have attracted increased interest owing to their exceptional optoelectronic properties and promising applications. Monolayers of transition metal dichalcogenides (TMDCs), such as tungsten disulfide (WS2), are also intriguing because of their unique optoelectronic properties and their atomically thin and flexible structures. Therefore, the combination of these different types of materials is very attractive in terms of fundamental science of interface interaction, as well as for the realization of ultrathin optoelectronic devices with high performance. Here, we demonstrate the controlled synthesis of two-dimensional (2D) perovskite/WS2 heterostructures by an all vapor-phase growth approach. This involves the chemical vapor deposition (CVD) growth of monolayer WS2, followed by the vapor-phase selective deposition of 2D PbI2 onto the WS2 with the successive conversion of PbI2 to organic-inorganic perovskite (CH3NH3PbI3). Moreover, the selective growth of the perovskite on prepatterned WS2 enables the direct synthesis of patterned heterostructures, avoiding any damage to the perovskite. The photodetectors utilizing the perovskite/WS2 heterostructure show increased responsivities compared with isolated thin perovskite obtained by conventional solution methods. The integration of 2D perovskite with TMDCs opens a new avenue to fabricate advanced devices by combining their unique properties and overcoming current processing difficulties of perovskites.
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Affiliation(s)
- Ufuk Erkılıç
- Interdisciplinary Graduate School of Engineering Sciences , Kyushu University , Fukuoka 816-8580 , Japan
| | | | - Hyun Goo Ji
- Interdisciplinary Graduate School of Engineering Sciences , Kyushu University , Fukuoka 816-8580 , Japan
| | - Keisuke Shinokita
- Institute of Advanced Energy , Kyoto University , Kyoto 611-0011 , Japan
| | - Yung-Chang Lin
- National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan
| | - Mina Maruyama
- Graduate School of Pure and Applied Sciences , University of Tsukuba , Tsukuba 305-8571 , Japan
| | - Kazu Suenaga
- National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan
| | - Susumu Okada
- Graduate School of Pure and Applied Sciences , University of Tsukuba , Tsukuba 305-8571 , Japan
| | - Kazunari Matsuda
- Institute of Advanced Energy , Kyoto University , Kyoto 611-0011 , Japan
| | - Hiroki Ago
- Interdisciplinary Graduate School of Engineering Sciences , Kyushu University , Fukuoka 816-8580 , Japan
- Global Innovation Center (GIC) , Kyushu University , Fukuoka 816-8580 , Japan
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18
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Bae SH, Kum H, Kong W, Kim Y, Choi C, Lee B, Lin P, Park Y, Kim J. Integration of bulk materials with two-dimensional materials for physical coupling and applications. NATURE MATERIALS 2019; 18:550-560. [PMID: 31114063 DOI: 10.1038/s41563-019-0335-2] [Citation(s) in RCA: 88] [Impact Index Per Article: 17.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2018] [Accepted: 03/06/2019] [Indexed: 05/21/2023]
Abstract
Hybrid heterostructures are essential for functional device systems. The advent of 2D materials has broadened the material set beyond conventional 3D material-based heterostructures. It has triggered the fundamental investigation and use in applications of new coupling phenomena between 3D bulk materials and 2D atomic layers that have unique van der Waals features. Here we review the state-of-the-art fabrication of 2D and 3D heterostructures, present a critical survey of unique phenomena arising from forming 3D/2D interfaces, and introduce their applications. We also discuss potential directions for research based on these new coupled architectures.
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Affiliation(s)
- Sang-Hoon Bae
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Hyun Kum
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Wei Kong
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yunjo Kim
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Chanyeol Choi
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Byunghun Lee
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Peng Lin
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yongmo Park
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jeehwan Kim
- Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
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19
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Hwang Y, Shin N. Hydrogen-assisted step-edge nucleation of MoSe 2 monolayers on sapphire substrates. NANOSCALE 2019; 11:7701-7709. [PMID: 30946393 DOI: 10.1039/c8nr10315a] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The fabrication of large-area single crystalline monolayer transition metal dichalcogenides (TMDs) is essential for a range of electric and optoelectronic applications. Chemical vapor deposition (CVD) is a promising method to achieve this goal by employing orientation control or alignment along the crystalline lattice of the substrate such as sapphire. On the other hand, a fundamental understanding of the aligned-growth mechanism of TMDs is limited. In this report, we show that the controlled introduction of H2 during the CVD growth of MoSe2 plays a vital role in the step-edge aligned nucleation on a c-sapphire (0001) substrate. In particular, the MoSe2 domains nucleate along the [112[combining macron]0] step-edge orientation by flowing H2 subsequent to pure Ar. Systematic studies, including the H2 introduction time, flow rate, and substrate temperature, suggest that the step-edge aligned nucleation of MoSe2 can be controlled by the hydrogen concentration on the sapphire substrate. These results offer important insights into controlling the epitaxial growth of 2D materials on a crystalline substrate.
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Affiliation(s)
- Yunjeong Hwang
- Department of Chemical Engineering, Inha University, 100, Inha-ro, Michuhol-Gu, Incheon 22212, Republic of Korea.
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20
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Perumal Veeramalai C, Li F, Guo T, Kim TW. Highly flexible memristive devices based on MoS 2 quantum dots sandwiched between PMSSQ layers. Dalton Trans 2019; 48:2422-2429. [PMID: 30688957 DOI: 10.1039/c8dt04593c] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
This paper reports a facile, cost effective method that uses an aqueous hydrothermal process for synthesizing two-dimensional molybdenum disulphide (MoS2) monolayer quantum dots (QDs) and their potential applications in flexible memristive devices. High-resolution transmission electron microscopy and atomic force microscopy images confirmed that the diameters of the synthesized MoS2 QDs with irregular shapes were in the range between 3 and 6 nm; their thicknesses were confirmed to lie between 1.0 and 0.8 nm, a clear indication that a monolayer of MoS2 QDs had been synthesized. Photoluminescence (PL) and time-resolved PL spectra of the MoS2 QDs revealed a strong emission in the blue region with a slower decay constant. Memristive devices fabricated by incorporating MoS2 QDs between poly(methylsilsesquioxane) ultrathin layers, which had been deposited on poly(ethylene terephthalate), demonstrated a high ON-OFF current ratio of ∼104, stable retention, and excellent endurance in the relaxed state; these devices were also demonstrated to function properly during bending and in a bent state. The flexible memristive devices demonstrated an OFF state with a very low current of 10-6 A. These results clearly show that ultrathin two-dimensional QDs have promising applications in high-performance flexible memristive devices.
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21
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Liu B, Wang S, Mo Q, Peng L, Cao S, Wang J, Wu C, Li C, Guo J, Liu B, Chen W, Lin Y. Epitaxial MoS2 nanosheets on nitrogen doped graphite foam as a 3D electrode for highly efficient electrochemical hydrogen evolution. Electrochim Acta 2018. [DOI: 10.1016/j.electacta.2018.09.160] [Citation(s) in RCA: 26] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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22
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Debbarma R, Behura SK, Wen Y, Che S, Berry V. WS 2-induced enhanced optical absorption and efficiency in graphene/silicon heterojunction photovoltaic cells. NANOSCALE 2018; 10:20218-20225. [PMID: 30357212 DOI: 10.1039/c8nr03194k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Van Hove singularity (VHS) induced enhancement of visible-frequency absorption in atomically-thin two-dimensional (2D) crystals provides an opportunity for improved light management in photovoltaics; however, it requires the 2D nanomaterial to be in close vicinity of a photojunction. In this report, we design a Schottky junction-based photovoltaic system with single-layer graphene atop n-type silicon (n-Si), which is interfaced directly with a few layers of tungsten disulfide (WS2) via a bottom-up CVD synthesis strategy. An enhanced power conversion efficiency in the architecture of WS2-graphene/n-Si is observed compared to graphene/n-Si. Here, the WS2 induced photon absorption, with only three atoms above the photo-junction, enhanced the short-circuit current density (Jsc), and the reconfiguration of the energy band structure led to effective built-in electric field induced charge carrier transport (enhanced open-circuit voltage (Voc)). Similar to a graphene/n-Si Schottky junction, the WS2-graphene/n-Si double junction exhibited non-linear current density-voltage (J-V) characteristics with a 4-fold increase in Jsc (2.28 mA cm-2 in comparison with 0.52 mA cm-2 for graphene/n-Si) and 40% increase in the Voc (184 mV compared to 130 mV for graphene/n-Si) with a 6-fold increase in the photovoltaic power conversion efficiency. Futuristically, we envision an evolution in 2D heterojunctions with sharp transitions in properties within a few nanometers enabling control on optical absorption, carrier distribution, and band structure for applications including tandem photovoltaic cells and 2D optoelectronic circuit-switches.
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Affiliation(s)
- Rousan Debbarma
- Department of Chemical Engineering, University of Illinois at Chicago, 810 S. Clinton Street, Chicago, IL 60607, USA.
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23
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Shen B, Xie H, Gu L, Chen X, Bai Y, Zhu Z, Wei F. Direct Chirality Recognition of Single-Crystalline and Single-Walled Transition Metal Oxide Nanotubes on Carbon Nanotube Templates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1803368. [PMID: 30216568 DOI: 10.1002/adma.201803368] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2018] [Revised: 08/23/2018] [Indexed: 06/08/2023]
Abstract
Chirality is a significant structural feature for chemistry, biology, physics, and materials science, and especially determines the electrical, mechanical, and optical properties of diverse tubular structures, such as carbon nanotubes (CNTs). To recognize the chirality of nanotubes, templates are introduced as potential tools to obtain crystalline samples with visible chiral fringes under electron microscopes. However, few efforts show optimistic results, and new understanding is desired to control the sample quality with CNT templates. Here, a synthesis strategy of single-crystalline molybdenum trioxide (α-MoO3 ) nanotubes (MONTs) on CNT surfaces is reported to build a 1D van der Waals (vdW) heterostructure. The chirality of the MONTs can be directly "seen" and their structural selectivity is revealed. First, the centralized distribution of the chiral angles of the MONTs indicates a preferential orientation due to the anisotropic bending rigidity of the 2D layers. Then, the interlayer mismatching rejects the radial stacking of α-MoO3 to maintain the single-walled nature. These results provide a spontaneous strategy for the efficient recognition and control of chirality, and open up a new avenue for CNT-based functional 1D vdW heterostructures.
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Affiliation(s)
- Boyuan Shen
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, China
| | - Huanhuan Xie
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xiao Chen
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, China
| | - Yunxiang Bai
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, China
| | - Zhenxing Zhu
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, China
| | - Fei Wei
- Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, China
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24
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Suenaga K, Ji HG, Lin YC, Vincent T, Maruyama M, Aji AS, Shiratsuchi Y, Ding D, Kawahara K, Okada S, Panchal V, Kazakova O, Hibino H, Suenaga K, Ago H. Surface-Mediated Aligned Growth of Monolayer MoS 2 and In-Plane Heterostructures with Graphene on Sapphire. ACS NANO 2018; 12:10032-10044. [PMID: 30232883 DOI: 10.1021/acsnano.8b04612] [Citation(s) in RCA: 31] [Impact Index Per Article: 5.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Aligned growth of transition metal dichalcogenides and related two-dimensional (2D) materials is essential for the synthesis of high-quality 2D films due to effective stitching of merging grains. Here, we demonstrate the controlled growth of highly aligned molybdenum disulfide (MoS2) on c-plane sapphire with two distinct orientations, which are highly controlled by tuning sulfur concentration. We found that the size of the aligned MoS2 grains is smaller and their photoluminescence is weaker as compared with those of the randomly oriented grains, signifying enhanced MoS2-substrate interaction in the aligned grains. This interaction induces strain in the aligned MoS2, which can be recognized from their high susceptibility to air oxidation. The surface-mediated MoS2 growth on sapphire was further developed to the rational synthesis of an in-plane MoS2-graphene heterostructure connected with the predefined orientation. The in-plane epitaxy was observed by low-energy electron microscopy. Transmission electron microscopy and scanning transmission electron microscopy suggest the alignment of a zigzag edge of MoS2 parallel to a zigzag edge of the neighboring graphene. Moreover, better electrical contact to MoS2 was obtained by the monolayer graphene compared with a conventional metal electrode. Our findings deepen the understanding of the chemical vapor deposition growth of 2D materials and also contribute to the tailored synthesis as well as applications of advanced 2D heterostructures.
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Affiliation(s)
- Kenshiro Suenaga
- Interdisciplinary Graduate School of Engineering Sciences , Kyushu University , Fukuoka 816-8580 , Japan
| | - Hyun Goo Ji
- Interdisciplinary Graduate School of Engineering Sciences , Kyushu University , Fukuoka 816-8580 , Japan
| | - Yung-Chang Lin
- National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan
| | - Tom Vincent
- National Physical Laboratory (NPL) , Teddington TW11 0LW , United Kingdom
| | - Mina Maruyama
- Graduate School of Pure and Applied Sciences , University of Tsukuba , Ibaraki 305-8571 , Japan
| | - Adha Sukma Aji
- Interdisciplinary Graduate School of Engineering Sciences , Kyushu University , Fukuoka 816-8580 , Japan
| | - Yoshihiro Shiratsuchi
- Interdisciplinary Graduate School of Engineering Sciences , Kyushu University , Fukuoka 816-8580 , Japan
| | - Dong Ding
- Interdisciplinary Graduate School of Engineering Sciences , Kyushu University , Fukuoka 816-8580 , Japan
| | - Kenji Kawahara
- Global Innovation Center (GIC) , Kyushu University , Fukuoka 816-8580 , Japan
| | - Susumu Okada
- Graduate School of Pure and Applied Sciences , University of Tsukuba , Ibaraki 305-8571 , Japan
| | - Vishal Panchal
- National Physical Laboratory (NPL) , Teddington TW11 0LW , United Kingdom
| | - Olga Kazakova
- National Physical Laboratory (NPL) , Teddington TW11 0LW , United Kingdom
| | - Hiroki Hibino
- School of Science and Technology , Kwansei Gakuin University , Hyogo 669-1337 , Japan
| | - Kazu Suenaga
- National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan
| | - Hiroki Ago
- Interdisciplinary Graduate School of Engineering Sciences , Kyushu University , Fukuoka 816-8580 , Japan
- National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba 305-8565 , Japan
- Global Innovation Center (GIC) , Kyushu University , Fukuoka 816-8580 , Japan
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25
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You J, Hossain MD, Luo Z. Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology. NANO CONVERGENCE 2018; 5:26. [PMID: 30467647 PMCID: PMC6160381 DOI: 10.1186/s40580-018-0158-x] [Citation(s) in RCA: 43] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2018] [Accepted: 09/10/2018] [Indexed: 05/08/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have stimulated the modern technology due to their unique and tunable electronic, optical, and chemical properties. Therefore, it is very important to study the control parameters for material preparation to achieve high quality thin films for modern electronics, as the performance of TMDs-based device largely depends on their layer number, grain size, orientation, and morphology. Among the synthesis methods, chemical vapor deposition (CVD) is an excellent technique, vastly used to grow controlled layer of 2D materials in recent years. In this review, we discuss the different growth routes and mechanisms to synthesize high quality large size TMDs using CVD method. We highlight the recent advances in the controlled growth of mono- and few-layer TMDs materials by varying different growth parameters. Finally, different strategies to control the grain size, boundaries, orientation, morphology and their application for various field of are also thoroughly discussed.
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Affiliation(s)
- Jiawen You
- Department of Chemical and Biological Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Md Delowar Hossain
- Department of Chemical and Biological Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
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26
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Wang R, Wang T, Hong T, Xu YQ. Probing photoresponse of aligned single-walled carbon nanotube doped ultrathin MoS 2. NANOTECHNOLOGY 2018; 29:345205. [PMID: 29869994 PMCID: PMC6086608 DOI: 10.1088/1361-6528/aaca69] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report a facile method to produce ultrathin molybdenum disulfide (MoS2) hybrids with polarized near-infrared (NIR) photoresponses, in which horizontally-aligned single-walled carbon nanotubes (SWNTs) are integrated with single- and few-layer MoS2 through a two-step chemical vapor deposition process. The photocurrent generation mechanisms in SWNT-MoS2 hybrids are systematically investigated through wavelength- and polarization-dependent scanning photocurrent measurements. When the incident photon energy is above the direct bandgap of MoS2, isotropic photocurrent signals are observed, which can be primarily attributed to the direct bandgap transition in MoS2. In contrast, if the incident photon energy in the NIR region is below the direct bandgap of MoS2, the maximum photocurrent response occurs when the incident light is polarized in the direction along the SWNTs, indicating that photocurrent signals mainly result from the anisotropic absorption of SWNTs. More importantly, these two-dimensional (2D) hybrid structures inherit the electrical transport properties from MoS2, displaying n-type characteristics at a zero gate voltage. These fundamental studies provide a new way to produce ultrathin MoS2 hybrids with inherited electrical properties and polarized NIR photoresponses, opening doors for engineering various 2D hybrid materials for future broadband optoelectronic applications.
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Affiliation(s)
- Rui Wang
- Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, USA
| | - Tianjiao Wang
- Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA
| | - Tu Hong
- Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA
| | - Ya-Qiong Xu
- Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, USA
- Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA
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27
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Uchida Y, Nakandakari S, Kawahara K, Yamasaki S, Mitsuhara M, Ago H. Controlled Growth of Large-Area Uniform Multilayer Hexagonal Boron Nitride as an Effective 2D Substrate. ACS NANO 2018; 12:6236-6244. [PMID: 29863847 DOI: 10.1021/acsnano.8b03055] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Multilayer hexagonal boron nitride (h-BN) is an ideal insulator for two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, because h-BN screens out influences from surroundings, allowing one to observe intrinsic physical properties of the 2D materials. However, the synthesis of large and uniform multilayer h-BN is still very challenging because it is difficult to control the segregation process of B and N atoms from metal catalysts during chemical vapor deposition (CVD) growth. Here, we demonstrate CVD growth of multilayer h-BN with high uniformity by using the Ni-Fe alloy film and borazine (B3H6N3) as catalyst and precursor, respectively. Combining Ni and Fe metals tunes the solubilities of B and N atoms and, at the same time, allows one to engineer the metal crystallinity, which stimulates the uniform segregation of multilayer h-BN. Furthermore, we demonstrate that triangular WS2 grains grown on the h-BN show photoluminescence stronger than that grown on a bare SiO2 substrate. The PL line width of WS2/h-BN (the minimum and mean widths are 24 and 43 meV, respectively) is much narrower than those of WS2/SiO2 (44 and 67 meV), indicating the effectiveness of our CVD-grown multilayer h-BN as an insulating layer. Large-area, multilayer h-BN realized in this work will provide an excellent platform for developing practical applications of 2D materials.
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28
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Solís-Fernández P, Bissett M, Ago H. Synthesis, structure and applications of graphene-based 2D heterostructures. Chem Soc Rev 2018; 46:4572-4613. [PMID: 28691726 DOI: 10.1039/c7cs00160f] [Citation(s) in RCA: 103] [Impact Index Per Article: 17.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
With the profuse amount of two-dimensional (2D) materials discovered and the improvements in their synthesis and handling, the field of 2D heterostructures has gained increased interest in recent years. Such heterostructures not only overcome the inherent limitations of each of the materials, but also allow the realization of novel properties by their proper combination. The physical and mechanical properties of graphene mean it has a prominent place in the area of 2D heterostructures. In this review, we will discuss the evolution and current state in the synthesis and applications of graphene-based 2D heterostructures. In addition to stacked and in-plane heterostructures with other 2D materials and their potential applications, we will also cover heterostructures realized with lower dimensionality materials, along with intercalation in few-layer graphene as a special case of a heterostructure. Finally, graphene heterostructures produced using liquid phase exfoliation techniques and their applications to energy storage will be reviewed.
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29
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Samadi M, Sarikhani N, Zirak M, Zhang H, Zhang HL, Moshfegh AZ. Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives. NANOSCALE HORIZONS 2018; 3:90-204. [PMID: 32254071 DOI: 10.1039/c7nh00137a] [Citation(s) in RCA: 116] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2, WS2 and WSe2, constitute an important class of materials with a layered crystal structure. Various types of G6-TMD nanomaterials, such as nanosheets, nanotubes and quantum dot nano-objects and flower-like nanostructures, have been synthesized. High thermodynamic stability under ambient conditions, even in atomically thin form, made nanosheets of these inorganic semiconductors a valuable asset in the existing library of two-dimensional (2D) materials, along with the well-known semimetallic graphene and insulating hexagonal boron nitride. G6-TMDs generally possess an appropriate bandgap (1-2 eV) which is tunable by size and dimensionality and changes from indirect to direct in monolayer nanosheets, intriguing for (opto)electronic, sensing, and solar energy harvesting applications. Moreover, rich intercalation chemistry and abundance of catalytically active edge sites make them promising for fabrication of novel energy storage devices and advanced catalysts. In this review, we provide an overview on all aspects of the basic science, physicochemical properties and characterization techniques as well as all existing production methods and applications of G6-TMD nanomaterials in a comprehensive yet concise treatment. Particular emphasis is placed on establishing a linkage between the features of production methods and the specific needs of rapidly growing applications of G6-TMDs to develop a production-application selection guide. Based on this selection guide, a framework is suggested for future research on how to bridge existing knowledge gaps and improve current production methods towards technological application of G6-TMD nanomaterials.
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Affiliation(s)
- Morasae Samadi
- Department of Physics, Sharif University of Technology, Tehran 11155-9161, Iran.
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30
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Chen T, Zhou Y, Sheng Y, Wang X, Zhou S, Warner JH. Hydrogen-Assisted Growth of Large-Area Continuous Films of MoS 2 on Monolayer Graphene. ACS APPLIED MATERIALS & INTERFACES 2018; 10:7304-7314. [PMID: 29446624 DOI: 10.1021/acsami.7b14860] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We show how control over the chemical vapor deposition (CVD) reaction chemistry of molybdenum disulfide (MoS2) by hydrogen addition can enable the direct growth of centimeter-scale continuous films of vertically stacked MoS2 monolayer on graphene under atmospheric pressure conditions. Hydrogen addition enables longer CVD growth times at high temperature by reducing oxidation effects that would otherwise degrade the monolayer graphene. By careful control of nucleation density and growth time, high-quality monolayer MoS2 films could be formed on graphene, realizing all CVD-grown vertically stacked monolayer semimetal/semiconducting interfaces. Photoluminescence spectroscopy shows quenching of MoS2 by the underlying graphene, indicating a good interfacial charge transfer. We utilize the MoS2/graphene vertical stacks as photodetectors, with photoresponsivities reaching 2.4 A/W under 135 μW 532 nm illumination. This approach provides insights into the scalable manufacturing of high-quality two-dimensional electronic and optoelectronic devices.
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Affiliation(s)
- Tongxin Chen
- Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, U.K
| | - Yingqiu Zhou
- Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, U.K
| | - Yuewen Sheng
- Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, U.K
| | - Xiaochen Wang
- Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, U.K
| | - Si Zhou
- Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, U.K
| | - Jamie H Warner
- Department of Materials, University of Oxford , Parks Road, Oxford OX1 3PH, U.K
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31
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Ji HG, Maruyama M, Aji AS, Okada S, Matsuda K, Ago H. van der Waals interaction-induced photoluminescence weakening and multilayer growth in epitaxially aligned WS2. Phys Chem Chem Phys 2018; 20:29790-29797. [DOI: 10.1039/c8cp04418j] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Influence of sapphire substrate on the epitaxial growth of WS2 was investigated in terms of the optical and electrical properties.
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Affiliation(s)
- Hyun Goo Ji
- Interdisciplinary Graduate School of Engineering Sciences
- Kyushu University
- Fukuoka 816-8580
- Japan
| | - Mina Maruyama
- Graduate School of Pure and Applied Sciences
- University of Tsukuba
- Ibaraki 305-8571
- Japan
| | - Adha Sukma Aji
- Interdisciplinary Graduate School of Engineering Sciences
- Kyushu University
- Fukuoka 816-8580
- Japan
| | - Susumu Okada
- Graduate School of Pure and Applied Sciences
- University of Tsukuba
- Ibaraki 305-8571
- Japan
| | - Kazunari Matsuda
- Institute of Advanced Energy
- Kyoto University
- Uji
- Kyoto, 611-0011
- Japan
| | - Hiroki Ago
- Interdisciplinary Graduate School of Engineering Sciences
- Kyushu University
- Fukuoka 816-8580
- Japan
- Global Innovation Center (GIC)
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32
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Aljarb A, Cao Z, Tang HL, Huang JK, Li M, Hu W, Cavallo L, Li LJ. Substrate Lattice-Guided Seed Formation Controls the Orientation of 2D Transition-Metal Dichalcogenides. ACS NANO 2017; 11:9215-9222. [PMID: 28783311 DOI: 10.1021/acsnano.7b04323] [Citation(s) in RCA: 53] [Impact Index Per Article: 7.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenide (TMDC) semiconductors are important for next-generation electronics and optoelectronics. Given the difficulty in growing large single crystals of 2D TMDC materials, understanding the factors affecting the seed formation and orientation becomes an important issue for controlling the growth. Here, we systematically study the growth of molybdenum disulfide (MoS2) monolayer on c-plane sapphire with chemical vapor deposition to discover the factors controlling their orientation. We show that the concentration of precursors, that is, the ratio between sulfur and molybdenum oxide (MoO3), plays a key role in the size and orientation of seeds, subsequently controlling the orientation of MoS2 monolayers. High S/MoO3 ratio is needed in the early stage of growth to form small seeds that can align easily to the substrate lattice structures, while the ratio should be decreased to enlarge the size of the monolayer at the next stage of the lateral growth. Moreover, we show that the seeds are actually crystalline MoS2 layers as revealed by high-resolution transmission electron microscopy. There exist two preferred orientations (0° or 60°) registered on sapphire, confirmed by our density functional theory simulation. This report offers a facile technique to grow highly aligned 2D TMDCs and contributes to knowledge advancement in growth mechanism.
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Affiliation(s)
- Areej Aljarb
- KAUST Catalysis Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Zhen Cao
- KAUST Catalysis Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Hao-Ling Tang
- KAUST Catalysis Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Jing-Kai Huang
- KAUST Catalysis Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Mengliu Li
- KAUST Catalysis Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Weijin Hu
- KAUST Catalysis Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Luigi Cavallo
- KAUST Catalysis Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Kingdom of Saudi Arabia
| | - Lain-Jong Li
- KAUST Catalysis Center, Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Kingdom of Saudi Arabia
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33
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Tian T, Shih CJ. Molecular Epitaxy on Two-Dimensional Materials: The Interplay between Interactions. Ind Eng Chem Res 2017. [DOI: 10.1021/acs.iecr.7b02669] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Tian Tian
- Institute for Chemical and
Bioengineering, ETH Zürich, Vladimir Prelog Weg 1, CH-8093 Zürich, Switzerland
| | - Chih-Jen Shih
- Institute for Chemical and
Bioengineering, ETH Zürich, Vladimir Prelog Weg 1, CH-8093 Zürich, Switzerland
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34
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Zhan L, Wan W, Zhu Z, Zhao Z, Zhang Z, Shih TM, Cai W. A visualization method for probing grain boundaries of single layer graphene via molecular beam epitaxy. NANOTECHNOLOGY 2017; 28:305601. [PMID: 28590942 DOI: 10.1088/1361-6528/aa77ec] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Graphene, a member of layered two-dimensional (2D) materials, possesses high carrier mobility, mechanical flexibility, and optical transparency, as well as enjoying a wide range of promising applications in electronics. Adopting the chemical vaporization deposition method, the majority of investigators have ubiquitously grown single layer graphene (SLG), which inevitably involves polycrystalline properties. Here we demonstrate a simple method for the direct visualization of arbitrarily large-size SLG domains by synthesizing one-hundred-nm-scale MoS2 single crystals via a high-vacuum molecular beam epitaxy process. The present study based on epitaxial growth provides a guide for probing the grain boundaries of various 2D materials and implements higher potentials for the next-generation electronic devices.
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Affiliation(s)
- Linjie Zhan
- Department of Physics, State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, 361005, People's Republic of China
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35
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Liang T, Xie S, Fu W, Cai Y, Shanmugavel C, Iwai H, Fujita D, Hanagata N, Chen H, Xu M. Synthesis and fast transfer of monolayer MoS 2 on reusable fused silica. NANOSCALE 2017; 9:6984-6990. [PMID: 28530278 DOI: 10.1039/c7nr01755c] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Atomically thin, two-dimensional materials ranging from superconductors, metals, semiconductors to insulators are emerging as potential candidates for the next-generation digital electronics and optoelectronic applications. Their synthesis on a commonly used substrate and fast transfer to a plenty of desired substrates need to be addressed to meet the industrialization criteria for practical applications. In this study, fused silica, which is amorphous, transparent, and inexpensive, was examined as a substrate for MoS2 synthesis. The MoS2 growth behavior on fused silica and its crystal quality were evaluated. In addition, a novel way was developed to quickly peel off MoS2 from the fused silica surface within 15 s (i.e., etching in an acidic solution to detach the edge and completing the delamination via a capillary force at the interface between air and water). The fused silica could be reused at least three times. Moreover, the produced MoS2 domains showed no obvious degradation of quality. These results support the feasibility of MoS2 synthesis on amorphous and recyclable substrates and also the time-saving transfer for the cost-effective and high-quality production of other two-dimensional materials.
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Affiliation(s)
- Tao Liang
- State Key Laboratory of Silicon Materials, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China.
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36
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Wan W, Zhan L, Xu B, Zhao F, Zhu Z, Zhou Y, Yang Z, Shih T, Cai W. Temperature-Related Morphological Evolution of MoS 2 Domains on Graphene and Electron Transfer within Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2017; 13:1603549. [PMID: 28151585 DOI: 10.1002/smll.201603549] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2016] [Revised: 12/19/2016] [Indexed: 06/06/2023]
Abstract
Other than the well-known sulfurization of molybdate compound to synthesize molybdenum disulfide (MoS2 ) layers, the dynamic process in the whole crystalline growth from nuclei to triangular domains has been rarely experimentally explored. Here, a competing sulfur-capture principle jointly with strict epitaxial mechanism is first proposed for the initial topography evolution and the final intrinsic highly oriented growth of triangular MoS2 domains with Mo or S terminations on the graphene (Gr) template. Additionally, potential distributions on MoS2 domains and bare Gr are presented to be different due to the charge transfer within heterostructures. The findings offer the mechanism of templated growth of 2D transition metal dichalcogenides, and provide general principles in syntheses of vertical 2D heterostructures that can be applied to electronics.
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Affiliation(s)
- Wen Wan
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China
| | - Linjie Zhan
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China
| | - Binbin Xu
- School of Chemistry and Chemical Engineering, Xiamen University, Xiamen, Fujian, 361005, China
| | - Feng Zhao
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China
| | - Zhenwei Zhu
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China
| | - Yinghui Zhou
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China
| | - Zhilin Yang
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China
| | - Tienmo Shih
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China
| | - Weiwei Cai
- Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China
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37
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Xia W, Dai L, Yu P, Tong X, Song W, Zhang G, Wang Z. Recent progress in van der Waals heterojunctions. NANOSCALE 2017; 9:4324-4365. [PMID: 28317972 DOI: 10.1039/c7nr00844a] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Following the development of many novel two-dimensional (2D) materials, investigations of van der Waals heterojunctions (vdWHs) have attracted significant attention due to their excellent properties such as smooth heterointerface, highly gate-tunable bandgap, and ultrafast carrier transport. Benefits from the atom-scale thickness, physical and chemical properties and ease of manipulation of the heterojunctions formulated by weak vdW forces were demonstrated to indicate their outstanding potential in electronic and optoelectronic applications, including photodetection and energy harvesting, and the possibility of integrating them with the existing semiconductor technology for the next-generation electronic and sensing devices. In this review, we summarized the recent developments of vdWHs and emphasized their applications. Basically, we introduced the physical properties and some newly discovered phenomena in vdWHs. Then, we emphatically presented four classical vdWHs and some novel heterostructures formed by vdW forces. Based on their unique physical properties and structures, we highlighted the applications of vdWHs including in photodiodes, phototransistors, tunneling devices, and memory devices. Finally, we provided a conclusion on the recent advances in vdWHs and outlined our perspectives. We aim for this review to serve as a solid foundation in this field and to pave the way for future research on vdW-based materials and their heterostructures.
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Affiliation(s)
- Wanshun Xia
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China. and Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Liping Dai
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China.
| | - Peng Yu
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Xin Tong
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
| | - Wenping Song
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China.
| | - Guojun Zhang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China.
| | - Zhiming Wang
- Institute of Fundamental and Frontier Science, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China.
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38
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An YR, Fan XL, Luo ZF, Lau WM. Nanopolygons of Monolayer MS 2: Best Morphology and Size for HER Catalysis. NANO LETTERS 2017; 17:368-376. [PMID: 27936804 DOI: 10.1021/acs.nanolett.6b04324] [Citation(s) in RCA: 37] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
With first-principles calculations, we find a new strategy for developing high-performance catalysts for hydrogen evolution reaction (HER) via controlling the morphology and size of nanopolygons of monolayer transition-metal dichalcogenides (npm-MS2, with M = Mo, W, or V). Particularly, through devising a quantitative method to measure HER-active sites per unit mass and using such HER site density to comparatively gauge npm-MS2 performance, we identify three keys in making npm-MS2 with optimal HER performance: (a) npm-MS2 should be triangular with each edge being M-terminated and each edge-M atom passivated by one S atom; (b) each edge of npm-MoS2 and WS2 should have 5-6 metal atoms as HER site density drops below/above these sizes optimal both for HER and practical npm growth; and (c) npm-VS2 is immune to this overly fastidious size dependence. Known experimental data on npm-MoS2 indeed support the plausibility of practicing these design rules. We expect that raising the nucleation density and controlling the growth time to favor the production of our proposed ultrasmall npm-MS2 are critical but practical. Research on npm-VS2 would bear the highest impact because of its size-forgiving HER performance and relatively high abundance and low cost.
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Affiliation(s)
- Yu-Rong An
- State Key Laboratory of Solidification Processing, School of Material Science and Engineering, Northwestern Polytechnical University , 127 YouYi Western Road, Xi'an, Shaanxi 710072, China
| | - Xiao-Li Fan
- State Key Laboratory of Solidification Processing, School of Material Science and Engineering, Northwestern Polytechnical University , 127 YouYi Western Road, Xi'an, Shaanxi 710072, China
- Center for Green Innovation, School of Mathematics and Physics, University of Science & Technology Beijing , Beijing 100083, China
| | - Zhi-Fen Luo
- State Key Laboratory of Solidification Processing, School of Material Science and Engineering, Northwestern Polytechnical University , 127 YouYi Western Road, Xi'an, Shaanxi 710072, China
| | - Woon-Ming Lau
- Center for Green Innovation, School of Mathematics and Physics, University of Science & Technology Beijing , Beijing 100083, China
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39
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Cadot S, Renault O, Frégnaux M, Rouchon D, Nolot E, Szeto K, Thieuleux C, Veyre L, Okuno H, Martin F, Quadrelli EA. A novel 2-step ALD route to ultra-thin MoS 2 films on SiO 2 through a surface organometallic intermediate. NANOSCALE 2017; 9:538-546. [PMID: 27762415 DOI: 10.1039/c6nr06021h] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The lack of scalable-methods for the growth of 2D MoS2 crystals, an identified emerging material with applications ranging from electronics to energy storage, is a current bottleneck against its large-scale deployment. We report here a two-step ALD route with new organometallic precursors, Mo(NMe2)4 and 1,2-ethanedithiol (HS(CH2)2SH) which consists in the layer-by-layer deposition of an amorphous surface Mo(iv) thiolate at 50 °C, followed by a subsequent annealing at higher temperature leading to ultra-thin MoS2 nanocrystals (∼20 nm-large) in the 1-2 monolayer range. In contrast to the usual high-temperature growth of 2D dichalcogenides, where nucleation is the key parameter to control both thickness and uniformity, our novel two-step ALD approach enables chemical control over these two parameters, the growth of 2D MoS2 crystals upon annealing being ensured by spatial confinement and facilitated by the formation of a buffer oxysulfide interlayer.
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Affiliation(s)
- Stéphane Cadot
- Univ. Grenoble Alpes, FR-38000 Grenoble, CEA, LETI, Minatec Campus, FR-38054 Grenoble Cedex 9, France. and Université de Lyon, C2P2 - UMR 5265 (CNRS - Université de Lyon 1 - CPE Lyon), Équipe Chimie Organométallique de Surface CPE Lyon, 43 Boulevard du 11 Novembre 1918, FR-69616 Villeurbanne Cedex, France.
| | - Olivier Renault
- Univ. Grenoble Alpes, FR-38000 Grenoble, CEA, LETI, Minatec Campus, FR-38054 Grenoble Cedex 9, France.
| | - Mathieu Frégnaux
- Univ. Grenoble Alpes, FR-38000 Grenoble, CEA, LETI, Minatec Campus, FR-38054 Grenoble Cedex 9, France.
| | - Denis Rouchon
- Univ. Grenoble Alpes, FR-38000 Grenoble, CEA, LETI, Minatec Campus, FR-38054 Grenoble Cedex 9, France.
| | - Emmanuel Nolot
- Univ. Grenoble Alpes, FR-38000 Grenoble, CEA, LETI, Minatec Campus, FR-38054 Grenoble Cedex 9, France.
| | - Kai Szeto
- Université de Lyon, C2P2 - UMR 5265 (CNRS - Université de Lyon 1 - CPE Lyon), Équipe Chimie Organométallique de Surface CPE Lyon, 43 Boulevard du 11 Novembre 1918, FR-69616 Villeurbanne Cedex, France.
| | - Chloé Thieuleux
- Université de Lyon, C2P2 - UMR 5265 (CNRS - Université de Lyon 1 - CPE Lyon), Équipe Chimie Organométallique de Surface CPE Lyon, 43 Boulevard du 11 Novembre 1918, FR-69616 Villeurbanne Cedex, France.
| | - Laurent Veyre
- Université de Lyon, C2P2 - UMR 5265 (CNRS - Université de Lyon 1 - CPE Lyon), Équipe Chimie Organométallique de Surface CPE Lyon, 43 Boulevard du 11 Novembre 1918, FR-69616 Villeurbanne Cedex, France.
| | - Hanako Okuno
- Univ. Grenoble Alpes, FR-38000 Grenoble, CEA, INAC, SP2 M, Minatec Campus, FR-38054 Grenoble Cedex 9, France
| | - François Martin
- Univ. Grenoble Alpes, FR-38000 Grenoble, CEA, LETI, Minatec Campus, FR-38054 Grenoble Cedex 9, France.
| | - Elsje Alessandra Quadrelli
- Université de Lyon, C2P2 - UMR 5265 (CNRS - Université de Lyon 1 - CPE Lyon), Équipe Chimie Organométallique de Surface CPE Lyon, 43 Boulevard du 11 Novembre 1918, FR-69616 Villeurbanne Cedex, France.
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40
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Garcia-Basabe Y, Rocha AR, Vicentin FC, Villegas CEP, Nascimento R, Romani EC, de Oliveira EC, Fechine GJM, Li S, Eda G, Larrude DG. Ultrafast charge transfer dynamics pathways in two-dimensional MoS2–graphene heterostructures: a core-hole clock approach. Phys Chem Chem Phys 2017; 19:29954-29962. [DOI: 10.1039/c7cp06283d] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2023]
Abstract
Ultrafast electron delocalization pathways on the MoS2/graphene heterostructure were elucidated.
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Affiliation(s)
| | - Alexandre R. Rocha
- Instituto de Física Teórica
- Universidade Estadual Paulista (Unesp) - São Paulo
- Brazil
| | - Flávio C. Vicentin
- Brazilian Synchrotron Light Laboratory (LNLS)
- Brazilian Center for Research in Energy and Materials (CNPEM)
- Campinas
- Brazil
| | - Cesar E. P. Villegas
- Instituto de Física Teórica
- Universidade Estadual Paulista (Unesp) - São Paulo
- Brazil
| | - Regiane Nascimento
- Universidade Federal de Ouro Preto
- Departamento de Física
- Universidade Federal de Ouro Preto
- Campus Morro do Cruzeiro
- Ouro Preto
| | - Eric C. Romani
- Departamento de Física
- Pontifícia Universidade Católica do Rio de Janeiro
- Brazil
| | - Emerson C. de Oliveira
- MackGraphe-Graphene and Nanomaterial Research Center
- Mackenzie Presbyterian University
- Brazil
| | | | - Shisheng Li
- Centre for Advanced 2D Materials
- National University of Singapore
- Singapore
| | - Goki Eda
- Centre for Advanced 2D Materials
- National University of Singapore
- Singapore
- Department of Physics
- National University of Singapore
| | - Dunieskys G. Larrude
- MackGraphe-Graphene and Nanomaterial Research Center
- Mackenzie Presbyterian University
- Brazil
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41
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Uchida Y, Iwaizako T, Mizuno S, Tsuji M, Ago H. Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate. Phys Chem Chem Phys 2017; 19:8230-8235. [DOI: 10.1039/c6cp08903h] [Citation(s) in RCA: 30] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Highly oriented, epitaxial growth of monolayer h-BN on Cu(111)/sapphire substrate by ambient pressure chemical vapour deposition.
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Affiliation(s)
- Yuki Uchida
- Interdisciplinary Graduate School of Engineering Sciences
- Kyushu University
- Fukuoka 816-8580
- Japan
| | - Tasuku Iwaizako
- Interdisciplinary Graduate School of Engineering Sciences
- Kyushu University
- Fukuoka 816-8580
- Japan
| | - Seigi Mizuno
- Interdisciplinary Graduate School of Engineering Sciences
- Kyushu University
- Fukuoka 816-8580
- Japan
| | - Masaharu Tsuji
- Research and Education Center of Carbon Resources
- Kyushu University
- Fukuoka 816-8580
- Japan
| | - Hiroki Ago
- Interdisciplinary Graduate School of Engineering Sciences
- Kyushu University
- Fukuoka 816-8580
- Japan
- Global Innovation Center (GIC)
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42
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Toth PS, Velický M, Bissett MA, Slater TJA, Savjani N, Rabiu AK, Rakowski AM, Brent JR, Haigh SJ, O'Brien P, Dryfe RAW. Asymmetric MoS 2 /Graphene/Metal Sandwiches: Preparation, Characterization, and Application. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2016; 28:8256-8264. [PMID: 27461734 DOI: 10.1002/adma.201600484] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2016] [Revised: 04/04/2016] [Indexed: 06/06/2023]
Abstract
The polarizable organic/water interface is used to construct MoS2 /graphene nanocomposites, and various asymmetrically dual-decorated graphene sandwiches are synthesized. High-resolution transmission electron microscopy and 3D electron tomography confirm their structure. These dual-decorated graphene-based hybrids show excellent hydrogen evolution activity and promising capacitance performance.
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Affiliation(s)
- Peter S Toth
- School of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
| | - Matĕj Velický
- School of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Mark A Bissett
- School of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Thomas J A Slater
- School of Materials, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Nicky Savjani
- School of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Aminu K Rabiu
- School of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Alexander M Rakowski
- School of Materials, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Jack R Brent
- School of Materials, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Sarah J Haigh
- School of Materials, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Paul O'Brien
- School of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
- School of Materials, University of Manchester, Oxford Road, Manchester, M13 9PL, UK
| | - Robert A W Dryfe
- School of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK.
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43
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Giusca CE, Rungger I, Panchal V, Melios C, Lin Z, Lin YC, Kahn E, Elías AL, Robinson JA, Terrones M, Kazakova O. Excitonic Effects in Tungsten Disulfide Monolayers on Two-Layer Graphene. ACS NANO 2016; 10:7840-7846. [PMID: 27434813 DOI: 10.1021/acsnano.6b03518] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Light emission in atomically thin heterostructures is known to depend on the type of materials and the number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in modulating the light emission. We study the layer-dependent charge transfer in vertical heterostructures built from monolayer tungsten disulfide (WS2) on one- and two-layer epitaxial graphene, unravelling the effect that the interlayer electronic coupling has on the excitonic properties of such heterostructures. We bring evidence that the excitonic properties of WS2 can be effectively tuned by the number of supporting graphene layers. Integrating WS2 monolayers with two-layer graphene leads to a significant enhancement of the photoluminescence response, up to 1 order of magnitude higher compared to WS2 supported on one-layer graphene. Our findings highlight the importance of substrate engineering when constructing atomically thin-layered heterostructures.
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Affiliation(s)
- Cristina E Giusca
- National Physical Laboratory , Hampton Road, Teddington TW11 0LW, United Kingdom
| | - Ivan Rungger
- National Physical Laboratory , Hampton Road, Teddington TW11 0LW, United Kingdom
| | - Vishal Panchal
- National Physical Laboratory , Hampton Road, Teddington TW11 0LW, United Kingdom
| | - Christos Melios
- National Physical Laboratory , Hampton Road, Teddington TW11 0LW, United Kingdom
- Advanced Technology Institute, University of Surrey , Guildford GU2 7XH, United Kingdom
| | | | | | | | | | | | | | - Olga Kazakova
- National Physical Laboratory , Hampton Road, Teddington TW11 0LW, United Kingdom
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Chen X, Park YJ, Das T, Jang H, Lee JB, Ahn JH. Lithography-free plasma-induced patterned growth of MoS2 and its heterojunction with graphene. NANOSCALE 2016; 8:15181-15188. [PMID: 27432242 DOI: 10.1039/c6nr03318k] [Citation(s) in RCA: 34] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Application-oriented patterned growth of transition metal dichalcogenides (TMDCs) and their heterojunctions is of critical importance for sophisticated, customized two-dimensional (2D) electronic and optoelectronic devices; however, it is still difficult to fabricate these patterns in a simple, clean, and high controllability manner without using optical lithography. Here, we report the direct synthesis of patterned MoS2 and graphene-MoS2 heterojunctions via selective plasma treatment of a SiO2/Si substrate and chemical vapor deposition of MoS2. This method has multiple merits, such as simple steps, a short operating time, easily isolated MoS2 layers with clean surfaces and controllable locations, shapes, sizes and thicknesses, which enable their integration into the device structure without using a photoresist. In addition, we demonstrate the direct growth of patterned graphene-MoS2 heterojunctions for the fabrication of transistor. This study reveals a novel method to fabricate and use patterned MoS2 and graphene-MoS2 heterojunctions, which could be generalized to the rational design of other 2D materials, heterojunctions and devices in the future.
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Affiliation(s)
- Xiang Chen
- Center for Strain Engineered Electronic Devices, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
| | - Yong Ju Park
- Center for Strain Engineered Electronic Devices, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
| | - Tanmoy Das
- Center for Strain Engineered Electronic Devices, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
| | - Houk Jang
- Center for Strain Engineered Electronic Devices, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
| | - Jae-Bok Lee
- Center for Strain Engineered Electronic Devices, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
| | - Jong-Hyun Ahn
- Center for Strain Engineered Electronic Devices, School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
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45
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Chen C, Feng Z, Feng Y, Yue Y, Qin C, Zhang D, Feng W. Large-Scale Synthesis of a Uniform Film of Bilayer MoS2 on Graphene for 2D Heterostructure Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2016; 8:19004-11. [PMID: 27381011 DOI: 10.1021/acsami.6b00751] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
The large-scale synthesis of atomically thin, layered MoS2/graphene heterostructures is of great interest in optoelectronic devices because of their unique properties. Herein, we present a scalable synthesis method to prepare centimeter-scale, continuous, and uniform films of bilayer MoS2 using low-pressure chemical vapor deposition. This growth process was utilized to assemble a heterostructure by growing large-scale uniform films of bilayer MoS2 on graphene (G-MoS2/graphene). Atomic force microscopy, Raman spectra, and transmission electron microscopy characterization demonstrated that the large-scale bilayer MoS2 film on graphene exhibited good thickness uniformity and a polycrystalline nature. A centimeter-scale phototransistor prepared using the G-MoS2/graphene heterostructure exhibited a high responsivity of 32 mA/W with good cycling stability; this value is 1 order of magnitude higher than that of transferred MoS2 on graphene (2.5 mA/W). This feature results from efficient charge transfer at the interface enabled by intimate contact between the grown bilayer MoS2 (G-MoS2) and graphene. The ability to integrate multilayer materials into atomically thin heterostructures paves the way for fabricating multifunctional devices by controlling their layer structure.
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Affiliation(s)
- Chuanmeng Chen
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, Tianjin University , Tianjin 300072, P.R. China
| | - Zhihong Feng
- College of Precision Instrument and Optoelectronics Engineering, State Key Laboratory of Precision Measuring Technology & Instruments, Tianjin University , Tianjin 300072, P.R. China
| | - Yiyu Feng
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, Tianjin University , Tianjin 300072, P.R. China
| | - Yuchen Yue
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, Tianjin University , Tianjin 300072, P.R. China
| | - Chengqun Qin
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, Tianjin University , Tianjin 300072, P.R. China
| | - Daihua Zhang
- College of Precision Instrument and Optoelectronics Engineering, State Key Laboratory of Precision Measuring Technology & Instruments, Tianjin University , Tianjin 300072, P.R. China
| | - Wei Feng
- School of Materials Science and Engineering, Tianjin Key Laboratory of Composite and Functional Materials, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, Tianjin University , Tianjin 300072, P.R. China
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46
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Pierucci D, Henck H, Naylor CH, Sediri H, Lhuillier E, Balan A, Rault JE, Dappe YJ, Bertran F, Fèvre PL, Johnson ATC, Ouerghi A. Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures. Sci Rep 2016; 6:26656. [PMID: 27246929 PMCID: PMC4894673 DOI: 10.1038/srep26656] [Citation(s) in RCA: 68] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2016] [Accepted: 05/03/2016] [Indexed: 11/09/2022] Open
Abstract
Two-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding platform to investigate the interlayer interaction in van der Waals heterostructures. Here, we study large area MoS2-graphene-heterostructures formed by direct transfer of chemical-vapor deposited MoS2 layer onto epitaxial graphene/SiC. We show that via a direct transfer, which minimizes interface contamination, we can obtain high quality and homogeneous van der Waals heterostructures. Angle-resolved photoemission spectroscopy (ARPES) measurements combined with Density Functional Theory (DFT) calculations show that the transition from indirect to direct bandgap in monolayer MoS2 is maintained in these heterostructures due to the weak van der Waals interaction with epitaxial graphene. A downshift of the Raman 2D band of the graphene, an up shift of the A1g peak of MoS2 and a significant photoluminescence quenching are observed for both monolayer and bilayer MoS2 as a result of charge transfer from MoS2 to epitaxial graphene under illumination. Our work provides a possible route to modify the thin film TDMCs photoluminescence properties via substrate engineering for future device design.
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Affiliation(s)
- Debora Pierucci
- Laboratoire de Photonique et de Nanostructures (CNRS- LPN),
Route de Nozay, 91460
Marcoussis, France
| | - Hugo Henck
- Laboratoire de Photonique et de Nanostructures (CNRS- LPN),
Route de Nozay, 91460
Marcoussis, France
| | - Carl H. Naylor
- Department of Physics and Astronomy, University of
Pennsylvania, 209S 33rd Street, Philadelphia,
Pennsylvania
19104, USA
| | - Haikel Sediri
- Laboratoire de Photonique et de Nanostructures (CNRS- LPN),
Route de Nozay, 91460
Marcoussis, France
| | - Emmanuel Lhuillier
- Institut des Nanosciences de Paris, UPMC, 4 place Jussieu,
boîte courrier 840, 75252
Paris cedex 05, France
| | - Adrian Balan
- Department of Physics and Astronomy, University of
Pennsylvania, 209S 33rd Street, Philadelphia,
Pennsylvania
19104, USA
- Laboratoire d’Innovation en Chimie des Surfaces et
Nanosciences, DSM/NIMBE/LICSEN (CNRS UMR 3685), CEA Saclay,
91191
Gif-sur-Yvette Cedex, France
| | - Julien E. Rault
- Synchrotron-SOLEIL, Saint-Aubin, BP48,
F91192 Gif sur Yvette Cedex, France
| | - Yannick J. Dappe
- SPEC, CEA, CNRS, Universite Paris-Saclay, CEA Saclay,
91191 Gif-sur-Yvette Cedex, France
| | - François Bertran
- Synchrotron-SOLEIL, Saint-Aubin, BP48,
F91192 Gif sur Yvette Cedex, France
| | - Patrick Le Fèvre
- Synchrotron-SOLEIL, Saint-Aubin, BP48,
F91192 Gif sur Yvette Cedex, France
| | - A. T. Charlie Johnson
- Department of Physics and Astronomy, University of
Pennsylvania, 209S 33rd Street, Philadelphia,
Pennsylvania
19104, USA
| | - Abdelkarim Ouerghi
- Laboratoire de Photonique et de Nanostructures (CNRS- LPN),
Route de Nozay, 91460
Marcoussis, France
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47
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Ago H, Fukamachi S, Endo H, Solís-Fernández P, Yunus RM, Uchida Y, Panchal V, Kazakova O, Tsuji M. Visualization of Grain Structure and Boundaries of Polycrystalline Graphene and Two-Dimensional Materials by Epitaxial Growth of Transition Metal Dichalcogenides. ACS NANO 2016; 10:3233-3240. [PMID: 26943750 DOI: 10.1021/acsnano.5b05879] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The presence of grain boundaries in two-dimensional (2D) materials is known to greatly affect their physical, electrical, and chemical properties. Given the difficulty in growing perfect large single-crystals of 2D materials, revealing the presence and characteristics of grain boundaries becomes an important issue for practical applications. Here, we present a method to visualize the grain structure and boundaries of 2D materials by epitaxially growing transition metal dichalcogenides (TMDCs) over them. Triangular single-crystals of molybdenum disulfide (MoS2) epitaxially grown on the surface of graphene allowed us to determine the orientation and size of the graphene grains. Grain boundaries in the polycrystalline graphene were also visualized reflecting their higher chemical reactivity than the basal plane. The method was successfully applied to graphene field-effect transistors, revealing the actual grain structures of the graphene channels. Moreover, we demonstrate that this method can be extended to determine the grain structure of other 2D materials, such as tungsten disulfide (WS2). Our visualization method based on van der Waals epitaxy can offer a facile and large-scale labeling technique to investigate the grain structures of various 2D materials, and it will also contribute to understand the relationship between their grain structure and physical properties.
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Affiliation(s)
- Hiroki Ago
- Institute for Materials Chemistry and Engineering (IMCE), Kyushu University , Kasuga, Fukuoka 816-8580, Japan
- Interdisciplinary Graduate School of Engineering Sciences, Kyushu University , Kasuga, Fukuoka 816-8580, Japan
- PRESTO, Japan Science and Technology Agency (JST) , Saitama 332-0012, Japan
| | - Satoru Fukamachi
- Institute for Materials Chemistry and Engineering (IMCE), Kyushu University , Kasuga, Fukuoka 816-8580, Japan
| | - Hiroko Endo
- Institute for Materials Chemistry and Engineering (IMCE), Kyushu University , Kasuga, Fukuoka 816-8580, Japan
| | - Pablo Solís-Fernández
- Institute for Materials Chemistry and Engineering (IMCE), Kyushu University , Kasuga, Fukuoka 816-8580, Japan
| | - Rozan Mohamad Yunus
- Interdisciplinary Graduate School of Engineering Sciences, Kyushu University , Kasuga, Fukuoka 816-8580, Japan
| | - Yuki Uchida
- Interdisciplinary Graduate School of Engineering Sciences, Kyushu University , Kasuga, Fukuoka 816-8580, Japan
| | - Vishal Panchal
- National Physical Laboratory , Hampton Road, Teddington TW11 0LW, United Kingdom
| | - Olga Kazakova
- National Physical Laboratory , Hampton Road, Teddington TW11 0LW, United Kingdom
| | - Masaharu Tsuji
- Research and Education Center of Carbon Resources, Kyushu University , Kasuga, Fukuoka 816-8580, Japan
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48
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Fu L, Sun Y, Wu N, Mendes RG, Chen L, Xu Z, Zhang T, Rümmeli MH, Rellinghaus B, Pohl D, Zhuang L, Fu L. Direct Growth of MoS₂/h-BN Heterostructures via a Sulfide-Resistant Alloy. ACS NANO 2016; 10:2063-70. [PMID: 26756578 DOI: 10.1021/acsnano.5b06254] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Improved properties arise in transition metal dichalcogenide (TMDC) materials when they are stacked onto insulating hexagonal boron nitride (h-BN). Therefore, the scalable fabrication of TMDCs/h-BN heterostructures by direct chemical vapor deposition (CVD) growth is highly desirable. Unfortunately, to achieve this experimentally is challenging. Ideal substrates for h-BN growth, such as Ni, become sulfides during the synthesis process. This leads to the decomposition of the pregrown h-BN film, and thus no TMDCs/h-BN heterostructure forms. Here, we report a thoroughly direct CVD approach to obtain TMDCs/h-BN vertical heterostructures without any intermediate transfer steps. This is attributed to the use of a nickel-based alloy with excellent sulfide-resistant properties and a high catalytic activity for h-BN growth. The strategy enables the direct growth of single-crystal MoS2 grains of up to 200 μm(2) on h-BN, which is approximately 1 order of magnitude larger than that in previous reports. The direct band gap of our grown single-layer MoS2 on h-BN is 1.85 eV, which is quite close to that for free-standing exfoliated equivalents. This strategy is not limited to MoS2-based heterostructures and so allows the fabrication of a variety of TMDCs/h-BN heterostructures, suggesting the technique has promise for nanoelectronics and optoelectronic applications.
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Affiliation(s)
- Lei Fu
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | - Yangyong Sun
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | - Nian Wu
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | | | - Linfeng Chen
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | - Zhen Xu
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | - Tao Zhang
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | | | | | - Darius Pohl
- IFW Dresden , P.O. Box 270116, 01069 Dresden, Germany
| | - Lin Zhuang
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
| | - Lei Fu
- College of Chemistry and Molecular Science, Wuhan University , Wuhan 430072, China
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49
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Wan W, Li X, Li X, Xu B, Zhan L, Zhao Z, Zhang P, Wu SQ, Zhu ZZ, Huang H, Zhou Y, Cai W. Interlayer coupling of a direct van der Waals epitaxial MoS2/graphene heterostructure. RSC Adv 2016. [DOI: 10.1039/c5ra22768b] [Citation(s) in RCA: 38] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
A triangular MoS2 monolayer directly synthesized on CVD-G on Pt reveals a strong correlation between each other.
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50
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Bhimanapati GR, Lin Z, Meunier V, Jung Y, Cha J, Das S, Xiao D, Son Y, Strano MS, Cooper VR, Liang L, Louie SG, Ringe E, Zhou W, Kim SS, Naik RR, Sumpter BG, Terrones H, Xia F, Wang Y, Zhu J, Akinwande D, Alem N, Schuller JA, Schaak RE, Terrones M, Robinson JA. Recent Advances in Two-Dimensional Materials beyond Graphene. ACS NANO 2015; 9:11509-39. [PMID: 26544756 DOI: 10.1021/acsnano.5b05556] [Citation(s) in RCA: 885] [Impact Index Per Article: 98.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
The isolation of graphene in 2004 from graphite was a defining moment for the "birth" of a field: two-dimensional (2D) materials. In recent years, there has been a rapidly increasing number of papers focusing on non-graphene layered materials, including transition-metal dichalcogenides (TMDs), because of the new properties and applications that emerge upon 2D confinement. Here, we review significant recent advances and important new developments in 2D materials "beyond graphene". We provide insight into the theoretical modeling and understanding of the van der Waals (vdW) forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies. Additionally, we highlight recent breakthroughs in TMD synthesis and characterization and discuss the newest families of 2D materials, including monoelement 2D materials (i.e., silicene, phosphorene, etc.) and transition metal carbide- and carbon nitride-based MXenes. We then discuss the doping and functionalization of 2D materials beyond graphene that enable device applications, followed by advances in electronic, optoelectronic, and magnetic devices and theory. Finally, we provide perspectives on the future of 2D materials beyond graphene.
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Affiliation(s)
- Ganesh R Bhimanapati
- Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Zhong Lin
- Department of Physics, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Vincent Meunier
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Yeonwoong Jung
- Nanoscience Technology Center, Department of Materials Science and Engineering, University of Central Florida , Orlando, Florida 32826, United States
| | - Judy Cha
- Department of Mechanical Engineering and Material Science, Yale School of Engineering and Applied Sciences , New Haven, Connecticut 06520, United States
| | - Saptarshi Das
- Birck Nanotechnology Center & Department of ECE, Purdue University , West Lafayette, Indiana 47907, United States
| | - Di Xiao
- Department of Physics, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213, United States
| | - Youngwoo Son
- Department of Chemical Engineering, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | - Michael S Strano
- Department of Chemical Engineering, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
| | - Valentino R Cooper
- Center for Nanophase Materials Sciences and Computer Science & Mathematics Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Liangbo Liang
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Steven G Louie
- Department of Physics, University of California at Berkeley , Berkeley, California 94720, United States
- Lawrence Berkeley National Lab , Berkeley, California 94720, United States
| | - Emilie Ringe
- Department of Materials Science & Nano Engineering, Rice University , Houston, Texas 77005, United States
| | - Wu Zhou
- Center for Nanophase Materials Sciences and Computer Science & Mathematics Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Steve S Kim
- Air Force Laboratory, Materials & Manufacturing directorate, Wright-Patterson AFB , Dayton, Ohio 45433, United States
- UES Inc. , Beavercreek, Ohio 45432, United States
| | - Rajesh R Naik
- Air Force Laboratory, Materials & Manufacturing directorate, Wright-Patterson AFB , Dayton, Ohio 45433, United States
| | - Bobby G Sumpter
- Center for Nanophase Materials Sciences and Computer Science & Mathematics Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Humberto Terrones
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States
| | - Fengnian Xia
- Department of Electrical Engineering, Yale University , New Haven, Connecticut 06511, United States
| | - Yeliang Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China
| | - Jun Zhu
- Department of Physics, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Deji Akinwande
- Microelectronics Research Centre, The University of Texas at Austin , Austin, Texas 78758, United States
| | - Nasim Alem
- Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Jon A Schuller
- Electrical and Computer Engineering Department, University of California at Santa Barbara , Santa Barbara, California 93106, United States
| | - Raymond E Schaak
- Department of Chemistry and Materials Research Institute, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Mauricio Terrones
- Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
- Department of Physics, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
- Department of Chemistry and Materials Research Institute, Pennsylvania State University , University Park, Pennsylvania 16802, United States
| | - Joshua A Robinson
- Department of Materials Science and Engineering, Center for Two-Dimensional and Layered Materials, Pennsylvania State University , University Park, Pennsylvania 16802, United States
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