Superlattice nanowire pattern transfer (SNAP)

High-performance plasmonic oblique sensors for the detection of ions

Efficient optical sensing is desirable for a wide range of applications. For sensors, the spectral factors of the sensitivity (S) and the figure of merit (FoM) and the intensity change related figure of merit (FOM*) are all the key factors in sensing measurement. In this work, we propose and demonstrate a novel high-performance plasmonic sensor platform using a resonant cavity array grating under oblique excitation. An ultra-sharp absorption mode with a bandwidth down to 1.3 nm is achieved when the oblique angle is 7.5°. During the sensing of the Na+ (Cl-) ions in the solution, the spectral S and FoM factors reach 568 nm RIU-1 (refractive index unit) and 436 nm RIU-1, respectively. The minimum detection limit is as low as 3.521 × 10-6 RIU. The FOM* factor is simultaneously up to 907. Moreover, the spectral intensity change is up to 57% when only a 1% concentration change is introduced into the solution. The detection limit of the concentration of the ions can be as low as 0.002%. The sensor has great potential applications due to its ultrahigh S, FoM, and FOM*.

Field-Effect Transistor Biosensors for Biomedical Applications: Recent Advances and Future Prospects

During recent years, field-effect transistor biosensors (Bio-FET) for biomedical applications have experienced a robust development with evolutions in FET characteristics as well as modification of bio-receptor structures. This review initially provides contemplation on this progress by analyzing and summarizing remarkable studies on two aforementioned aspects. The former includes fabricating unprecedented nanostructures and employing novel materials for FET transducers whereas the latter primarily synthesizes compact molecules as bio-probes (antibody fragments and aptamers). Afterwards, a future perspective on research of FET-biosensors is also predicted depending on current situations as well as its great demand in clinical trials of disease diagnosis. From these points of view, FET-biosensors with infinite advantages are expected to continuously advance as one of the most promising tools for biomedical applications.

Nanowire Electronics: From Nanoscale to Macroscale

Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.

CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization

Owing to their two-dimensional confinements, silicon nanowires display remarkable optical, magnetic, and electronic properties. Of special interest has been the development of advanced biosensing approaches based on the field effect associated with silicon nanowires (SiNWs). Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications. A key requirement toward the fulfilment of SiNW FETs' promises in the bioanalytical field is their efficient integration within functional devices. Aiming to provide a comprehensive roadmap for the development of SiNW FET based sensing platforms, we critically review and discuss the key design and fabrication aspects relevant to their development and integration within complementary metal-oxide-semiconductor (CMOS) technology.

Redox-Responsive Molecular Systems and Materials

Redox reactions can alter the electronic, optical, and magnetic properties of molecules and their ensembles by adding or removing electrons. Here, the developments made over the past 10 years using molecular events are discussed, such as assembly/disassembly, transformation of ensembles, geometric changes, and molecular motions that are designed to be redox-responsive. Considerable progress has occurred in the application of these events to the realization of electronic memory, color displays, actuators, adhesives, and drug delivery. In these cases, systems behave in either a highly or a poorly correlated manner depending on the number of redox-active units involved, based on the method of integration. One of the great advantages of redox-responsive devices and materials is that they have the potential to be readily integrated into existing electronic technologies.

High-throughput patterning of photonic structures with tunable periodicity

A patterning method termed "RIPPLE" (reactive interface patterning promoted by lithographic electrochemistry) is applied to the fabrication of arrays of dielectric and metallic optical elements. This method uses cyclic voltammetry to impart patterns onto the working electrode of a standard three-electrode electrochemical setup. Using this technique and a template stripping process, periodic arrays of Ag circular Bragg gratings are patterned in a high-throughput fashion over large substrate areas. By varying the scan rate of the cyclically applied voltage ramps, the periodicity of the gratings can be tuned in situ over micrometer and submicrometer length scales. Characterization of the periodic arrays of periodic gratings identified point-like and annular scattering modes at different planes above the structured surface. Facile, reliable, and rapid patterning techniques like RIPPLE may enable the high-throughput and low-cost fabrication of photonic elements and metasurfaces for energy conversion and sensing applications.

Silica Nanowires: Growth, Integration, and Sensing Applications

This review (with 129 refs.) gives an overview on how the integration of silica nanowires (NWs) into micro-scale devices has resulted, in recent years, in simple yet robust nano-instrumentation with improved performance in targeted application areas such as sensing. This has been achieved by the use of appropriate techniques such as di-electrophoresis and direct vapor-liquid-growth phenomena, to restrict the growth of NWs to site-specific locations. This also has eliminated the need for post-growth processing and enables nanostructures to be placed on pre-patterned substrates. Various kinds of NWs have been investigated to determine how their physical and chemical properties can be tuned for integration into sensing structures. NWs integrated onto interdigitated micro-electrodes have been applied to the determination of gases and biomarkers. The technique of directly growing NWs eliminates the need for their physical transfer and thus preserves their structure and performance, and further reduces the costs of fabrication. The biocompatibility of NWs also has been studied with respect to possible biological applications. This review addresses the challenges in growth and integration of NWs to understand related mechanism on biological contact or gas exposure and sensing performance for personalized health and environmental monitoring.

Silica nanowire arrays for diffraction-based bioaffinity sensing

Arrays of electrodeposited silica nanowires (SiO2 NWs) have been fabricated over large areas (cm(2)) on fluoropolymer thin films attached to glass substrates by a combination of photolithography and electrochemically triggered sol-gel nanoscale deposition. Optical and scanning electron microscopy (SEM) measurements revealed that the SiO2 NW arrays had an average spacing of ten micrometers and an average width of 700 nm with a significant grain structure that was a result of the sol-gel deposition process. The optical diffraction properties at 633 nm of the SiO2 NW arrays were characterized when placed in contact with solutions by using a prism-coupled total internal reflection geometry; quantification of changes in these diffraction properties was applied in various sensing applications. Bulk refractive index sensing by using the SiO2 NW grating was demonstrated with a sensitivity of 1.30×10(-5) RIU. Toposelectively chemically modified SiO2 NW arrays were used for diffraction biosensing measurements of surface binding events, such as the electrostatic adsorption of gold nanoparticles and the bioaffinity adsorption of streptavidin onto a biotin monolayer. Finally, the application of the SiO2 NW arrays for practical medical-diagnostic applications was demonstrated by monitoring the diffraction of SiO2 NW arrays functionalized with a single-stranded (ss)DNA aptamer to detect human α-thrombin from solutions at sub-pathologic nanomolar concentrations.

Laser annealing of nanocrystalline gold nanowires

The efficacy of laser annealing for the thermal annealing of nanocrystalline gold nanowires is evaluated. Continuous laser illumination at 532 nm, focused to a 0.5 μm diameter spot, was rastered perpendicular to the axis of nanocrystalline gold nanowire at ∼2 kHz. This rastered beam was then scanned down the nanowire at velocities from 7 to 112 nm/s. The influence on the electrical resistance of the gold nanowire of laser power, polarization, translation speed, and nanowire width were evaluated. Nanocrystalline gold nanowires were prepared on glass surfaces using the lithographically patterned nanowire electrodeposition (LPNE) method. These nanowires had a rectangular cross section with a height of 20 (± 3) nm and widths ranging from 76 to 274 nm. The 4-contact electrical resistance of the nanowire is measured in situ during laser annealing and a real-time decrease in electrical resistance of between 30 and 65% is observed, depending upon the laser power and scan rate along the nanowire. These resistance decreases are associated with an increase in the mean grain diameter within these nanowires, measured using transmission electron microscopy, of up to 300%. The observed decrease in the electrical resistance induced by laser annealing conforms to classical predictions based upon the reduction in grain boundary scattering induced by grain growth.

Transfer printing techniques for materials assembly and micro/nanodevice fabrication

Transfer printing represents a set of techniques for deterministic assembly of micro-and nanomaterials into spatially organized, functional arrangements with two and three-dimensional layouts. Such processes provide versatile routes not only to test structures and vehicles for scientific studies but also to high-performance, heterogeneously integrated functional systems, including those in flexible electronics, three-dimensional and/or curvilinear optoelectronics, and bio-integrated sensing and therapeutic devices. This article summarizes recent advances in a variety of transfer printing techniques, ranging from the mechanics and materials aspects that govern their operation to engineering features of their use in systems with varying levels of complexity. A concluding section presents perspectives on opportunities for basic and applied research, and on emerging use of these methods in high throughput, industrial-scale manufacturing.

Shuttle-like supramolecular nanostructures formed by self-assembly of a porphyrin via an oil/water system

In this paper, in terms of the concentration of an aqueous solution of a surfactant, we investigate the self-assembly behavior of a porphyrin, 5, 10, 15, 20-tetra(4-pyridyl)-21H, 23H-porphine [H2TPyP], by using an oil/water system as the medium. We find that when a chloroform solution of H2TPyP is dropwise added into an aqueous solution of cetyltrimethylammonium bromide [CTAB] with a lower concentration, a large amount of irregular nanoarchitectures, together with a small amount of well-defined shuttle-like nanostructures, hollow nanospheres, and nanotubes, could be produced. While a moderate amount of shuttle-like nanostructures accompanied by a few irregular nanoarchitectures, solid nanospheres, and nanorods are produced when a CTAB aqueous solution in moderate concentration is employed, in contrast, a great quantity of shuttle-like nanostructures together with a negligible amount of solid nanospheres, nanofibers, and irregular nanostructures are manufactured when a high-concentration CTAB aqueous solution is involved. An explanation on the basis of the molecular geometry of H2TPyP and in terms of the intermolecular π-π interactions between H2TPyP units, and hydrophobic interactions between CTAB and H2TPyP has been proposed. The investigation gives deep insights into the self-assembly behavior of porphyrins in an oil/water system and provides important clues concerning the design of appropriate porphyrins when related subjects are addressed. Our investigation suggests that an oil/aqueous system might be an efficient medium for producing unique organic-based nanostructures.

Electroplate and lift lithography for patterned micro/nanowires using ultrananocrystalline diamond (UNCD) as a reusable template

A fast, simple, scalable technique is described for the controlled, solution-based, electrochemical synthesis of patterned metallic and semiconducting nanowires from reusable, nonsacrificial, ultrananocrystalline diamond (UNCD) templates. This enables the repeated fabrication of arrays of complex patterns of nanowires, potentially made of any electrochemically depositable material. Unlike all other methods of patterning nanowires, this benchtop technique quickly mass-produces patterned nanowires whose diameters are not predefined by the template, without requiring intervening vacuum or clean room processing. This technique opens a pathway for studying nanoscale phenomena with minimal equipment, allowing the process-scale development of a new generation of nanowire-based devices.

Small-sized silicon nanoparticles: new nanolights and nanocatalysts

Owing to their abundant unique properties and ready compatibility with Si microelectronic technology, Si nanostructures are becoming one of the most important classes of nano semiconductors. Particularly, small-sized Si nanoparticles possess distinctive photoluminescence (PL), biocompatibility, and active surface properties. In this review, we focus on the synthesis and PL properties of small-sized Si nanoparticles and their potential applications in the fields of bioimaging and nanocatalysis. We further highlight major challenges and promises in this area.

Ultradense, deep subwavelength nanowire array photovoltaics as engineered optical thin films

A photovoltaic device comprised of an array of 20 nm wide, 32 nm pitch array of silicon nanowires is modeled as an optical material. The nanowire array (NWA) has characteristic device features that are deep in the subwavelength regime for light, which permits a number of simplifying approximations. Using photocurrent measurements as a probe of the absorptance, we show that the NWA optical properties can be accurately modeled with rigorous coupled-wave analysis. The densely structured NWAs behave as homogeneous birefringent materials into the ultraviolet with effective optical properties that are accurately modeled using the dielectric functions of bulk Si and SiO2, coupled with a physical model for the NWA derived from ellipsometry and transmission electron microscopy.

Growth of nickel silicides in Si and Si/SiOx core/shell nanowires

We exploited the oxide shell structure to explore the structure confinement effect on the nickel silicide growth in one-dimensional nanowire template. The oxide confinement structure is similar to the contact structure (via hole) in the thin film system or nanodevices passivated by oxide or nitride film. Silicon nanowires in direct contact with nickel pads transform into two phases of nickel silicides, Ni31Si12 and NiSi2, after one-step annealing at 550 °C. In a bare Si nanowire during the annealing process, NiSi2 grows initially through the nanowire, followed by the transformation of NiSi2 into the nickel-rich phase, Ni31Si12 starting from near the nickel pad. Ni31Si12 is also observed under the nickel pads. Although the same phase transformations of Si to nickel silicides are observed in nanowires with oxide confinement structure, the growth rate of nickel silicides, Ni31Si12 and NiSi2, is retarded dramatically. With increasing oxide thickness from 5 to 50 nm, the retarding effect of the Ni31Si12 growth and the annihilation of Ni2Si into the oxide confined-Si is clearly observed. Ni31Si12 and Ni2Si phases are limited to grow into the Si/SiOx core-shell nanowire as the shell thickness reaches 50 nm. It is experimental evidence that phase transformation is influenced by the stressed structure at nanoscale.

Achieving the theoretical depairing current limit in superconducting nanomesh films

We show the theoretical depairing current limit can be achieved in a robust fashion in highly ordered superconductor nanomesh films having spatial periodicities smaller than both the superconducting coherence length and the magnetic penetration depth. For a niobium nanomesh film with 34 nm spatial periodicity, the experimental critical current density is enhanced by more than 17 times over the continuous film and is in good agreement with the depairing limit over the entire measured temperature range. The nanomesh superconductors are also less susceptible to thermal fluctuations when compared to nanowire superconductors. T(c) values similar to the bulk film are achieved, and the nanomeshes are capable of retaining superconductivity to higher fields relative to the bulk. In addition, periodic oscillations in T(c) are observed as a function of field, reflecting the highly ordered nanomesh structure.

Metal nanowire grating patterns

Metal nanowire patterning in the form of grating structures has been carried out using a wide range of lithography techniques, and many hybrid methods derived from them. The challenge is to achieve sub-100 nm linewidths with controllable spacing and thickness over large areas of substrates with high throughput. In particular, the patterns with linewidth and spacing of a few tens of nm offer properties of great interest in optoelectronics and plasmonics. Crossbar grating structures--two gratings patterned perpendicular to each other--will play an important role as ultra-high density electrode grids in memristive devices for non-volatile memory.

Reduction of thermal conductivity in phononic nanomesh structures

Controlling the thermal conductivity of a material independently of its electrical conductivity continues to be a goal for researchers working on thermoelectric materials for use in energy applications and in the cooling of integrated circuits. In principle, the thermal conductivity κ and the electrical conductivity σ may be independently optimized in semiconducting nanostructures because different length scales are associated with phonons (which carry heat) and electric charges (which carry current). Phonons are scattered at surfaces and interfaces, so κ generally decreases as the surface-to-volume ratio increases. In contrast, σ is less sensitive to a decrease in nanostructure size, although at sufficiently small sizes it will degrade through the scattering of charge carriers at interfaces. Here, we demonstrate an approach to independently controlling κ based on altering the phonon band structure of a semiconductor thin film through the formation of a phononic nanomesh film. These films are patterned with periodic spacings that are comparable to, or shorter than, the phonon mean free path. The nanomesh structure exhibits a substantially lower thermal conductivity than an equivalently prepared array of silicon nanowires, even though this array has a significantly higher surface-to-volume ratio. Bulk-like electrical conductivity is preserved. We suggest that this development is a step towards a coherent mechanism for lowering thermal conductivity.

Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties

This paper summarizes some of the essential aspects of silicon-nanowire growth and of their electrical properties. In the first part, a brief description of the different growth techniques is given, though the general focus of this work is on chemical vapor deposition of silicon nanowires. The advantages and disadvantages of the different catalyst materials for silicon-wire growth are discussed at length. Thereafter, in the second part, three thermodynamic aspects of silicon-wire growth via the vapor-liquid-solid mechanism are presented and discussed. These are the expansion of the base of epitaxially grown Si wires, a stability criterion regarding the surface tension of the catalyst droplet, and the consequences of the Gibbs-Thomson effect for the silicon wire growth velocity. The third part is dedicated to the electrical properties of silicon nanowires. First, different silicon nanowire doping techniques are discussed. Attention is then focused on the diameter dependence of dopant ionization and the influence of interface trap states on the charge carrier density in silicon nanowires. It is concluded by a section on charge carrier mobility and mobility measurements.