Hole surface trapping in CdSe nanocrystals: dynamics, rate fluctuations, and implications for blinking

Demystifying Trion Emission in CdSe Nanoplatelets

At cryogenic temperatures, the photoluminescence spectrum of CdSe nanoplatelets (NPLs) usually consists of multiple emission lines, the origin of which is still under debate. While there seems to be consensus that both neutral excitons and trions contribute to the NPL emission, the prominent role of trions is rather puzzling. In this work, we demonstrate that Förster resonant energy transfer in stacks of NPLs combined with hole trap states in specific NPLs within the stack trigger trion formation, while single NPL spectra are dominated by neutral excitonic emission. This interpretation is verified by implementing copper (Cu+) dopants into the lattice as intentional hole traps. Trion emission gets strongly enhanced, and due to the large amount of hole trapping Cu+ states in each single NPL, trion formation does not necessarily require stacking of NPLs. Thus, the ratio between trion and neutral exciton emission can be controlled by either changing the amount of stacked NPLs during sample preparation or implementing copper dopants into the lattice which act as additional hole traps.

Metal-Dictated Reactivity of Z-Type Ligands to Passivate Surface Defects on CdSe Nanocrystals

Accessing semiconductor nanocrystals free from surface defects is an outstanding challenge in the design of materials with targeted properties. Despite the established importance of Z-type ligand surface passivation to eliminate defects, the optical and electronic properties of nanocrystals vary depending on the nanocrystal composition and Z-type ligand identity. In this work, a series of Cd-, Zn-, and Pb-based non-native Z-type ligands with the formula MX2 (X = undecylenate or chloride) were employed to elucidate Z-type ligand characteristics that result in surface passivation of undercoordinated surface ions to eliminate trap states from CdSe nanocrystals. First, CdSe nanocrystals were reacted with N,N,N',N'-tetramethylethylene-1,2-diamine (TMEDA) to remove native Cd(oleate)2 Z-type ligands from the surface, resulting in undercoordinated surface chalcogen ions. After subsequent reaction with M(UDA)2, ligands bound to the surface were quantified by NMR spectroscopy, and in parallel, the impact of Z-type ligands on the nanocrystal optical properties was monitored using photoluminescence spectroscopy. We find that Cd- and Zn-based Z-type ligands exhibit similar reactivity with the nanocrystal surface via NMR spectroscopy, yet Cd(UDA)2 passivation results in an 800% PL increase while Zn(UDA)2 passivation yields a 13% increase in photoluminescence intensity. Nanocrystals reacted with Pb-based Z-type ligands have lower surface coverage, as quantified by NMR spectroscopy, and lead to only a marginal increase of nanocrystal photoluminescence intensity (60%). These data indicate that the metal identity of the Z-type ligand has a profound impact on the reactivity and resulting electronic structure of the postsynthetically modified nanocrystal. This work provides a framework for achieving defect-free CdSe nanocrystals.

Surface Reconstructions in II-VI Quantum Dots

Although density functional theory (DFT) calculations have been crucial in our understanding of colloidal quantum dots (QDs), simulations are commonly carried out on QD models that are significantly smaller than those generally found experimentally. While smaller models allow for efficient study of local surface configurations, increasing the size of the QD model will increase the size or number of facets, which can in turn influence the energetics and characteristics of trap formation. Moreover, core-shell structures can only be studied with QD models that are large enough to accommodate the different layers with the correct thickness. Here, we use DFT calculations to study the electronic properties of QDs as a function of size, up to a diameter of ∼4.5 nm. We show that increasing the size of QD models traditionally used in DFT studies leads to a disappearance of the band gap and localization of the HOMO and LUMO levels on facet-specific regions of the QD surface. We attribute this to the lateral coupling of surface orbitals and the formation of surface bands. The introduction of surface vacancies and their a posteriori refilling with Z-type ligands leads to surface reconstructions that widen the band gap and delocalize both the HOMO and LUMO. These results show that the surface geometry of the facets plays a pivotal role in defining the electronic properties of the QD.

Electronic Structure and Excited State Dynamics of Cadmium Chalcogenide Nanorods

The cylindrical quasi-one-dimensional shape of colloidal semiconductor nanorods (NRs) gives them unique electronic structure and optical properties. In addition to the band gap tunability common to nanocrystals, NRs have polarized light absorption and emission and high molar absorptivities. NR-shaped heterostructures feature control of electron and hole locations as well as light emission energy and efficiency. We comprehensively review the electronic structure and optical properties of Cd-chalcogenide NRs and NR heterostructures (e.g., CdSe/CdS dot-in-rods, CdSe/ZnS rod-in-rods), which have been widely investigated over the last two decades due in part to promising optoelectronic applications. We start by describing methods for synthesizing these colloidal NRs. We then detail the electronic structure of single-component and heterostructure NRs and follow with a discussion of light absorption and emission in these materials. Next, we describe the excited state dynamics of these NRs, including carrier cooling, carrier and exciton migration, radiative and nonradiative recombination, multiexciton generation and dynamics, and processes that involve trapped carriers. Finally, we describe charge transfer from photoexcited NRs and connect the dynamics of these processes with light-driven chemistry. We end with an outlook that highlights some of the outstanding questions about the excited state properties of Cd-chalcogenide NRs.

Sequential Carrier Transfer Can Accelerate Triplet Energy Transfer from Functionalized CdSe Nanocrystals

Nanocrystal (NC)-sensitized triplet-fusion upconversion is a rising strategy to convert long-wavelength, incoherent light into higher-energy output photons. Here, we chart the photophysics of tailor-functionalized CdSe NCs to understand energy transfer to surface-anchored transmitter ligands, which can proceed via correlated exciton transfer or sequential carrier hops. Varying NC size, we observe a pronounced acceleration of energy transfer (from k_quench = 0.0096 ns^-1 ligand^-1 to 0.064 ns^-1 ligand^-1) when the barrier to hole-first sequential transfer is lowered from 100 ± 25 meV to 50 ± 25 meV. This acceleration is 5.1× the expected effect of increased carrier wave function leakage, so we conclude that sequential transfer becomes kinetically dominant under the latter conditions. Last, transient photoluminescence shows that NC band-edge and trap states are comparably quenched by functionalization (up to ∼98% for sequential transfer) and exhibit matched dynamics for t > 300 ns, consistent with a dynamic quasi-equilibrium where photoexcitations can ultimately be extracted even when a carrier is initially trapped.

Optical-Gain-based Sensing Using Inorganic-Ligand-Passivated Colloidal Quantum Dots

Thanks to their extremely large surface-to-volume ratio, colloidal quantum dots are potential high-performance sensing materials. However, previous sensing works using their spontaneous emission suffer from low sensitivities. The absence of an amplification process and the presence of the steric hindrance of long-chain organic ligands are two possible causations. Herein we propose that these two issues can be circumvented by using the amplified spontaneous emission of colloidal quantum dots capped by short-chain inorganic ligands. To exemplify this concept, we performed humidity sensing and observed a ∼31 times enhancement in sensitivity. Meanwhile, we found that the amplified spontaneous emission threshold power was reduced by 34% in a high humidity environment. On the basis of our transient absorption measurements, we attribute these observations to the mitigation of ultrafast subpicosecond trapping processes, which are enabled by the absorption of water molecules.

Core/Shell Magic-Sized CdSe Nanocrystals

Magic-sized semiconductor nanocrystals (MSNCs) grow via discrete jumps between specific sizes. Despite their potential to offer atomically precise structures, their use has been limited by poor stability and trap-dominated photoluminescence. Recently, CdSe MSNCs have been grown to larger sizes. We exploit such particles and demonstrate a method to grow shells on CdSe MSNC cores via high-temperature synthesis. Thin CdS shells lead to dramatic improvements in the emissive properties of the MSNCs, narrowing their fluorescence line widths, enhancing photoluminescence quantum yields, and eliminating trap emission. Although thicker CdS shells lead to decreased performance, Cd_xZn_1-xS alloyed shells maintain efficient and narrow emission lines. These alloyed core/shell crystallites exhibit a tetrahedral shape, in agreement with a recent model for MSNC growth. Our results indicate that MSNCs can compete with other state-of-the-art semiconductor nanocrystals. Furthermore, these core/shell structures will allow further study of MSNCs and their potential for atomically precise growth.

Fluorescent Semiconductor Nanorods for the Solid-Phase Polymerase Chain Reaction-Based, Multiplexed Gene Detection of Mycobacterium tuberculosis

The spread of infectious diseases with significantly high mortality rates can wreak devastating damage on global health systems and economies, underscoring the need for better disease diagnostic platforms. Solid-phase polymerase chain reaction (SP-PCR) potentially combines the advantages of conventional PCR-based diagnostics with the capability of multiplexed detection, given that the spatial separation between primers circumvents unwanted primer-primer interactions. However, the generally low efficiency of solid-phase amplification results in poor sensitivity and limits its use in detection schemes. We present an SP-PCR-based, multiplexed pulldown fluorescence assay for the detection of Mycobacterium tuberculosis (MTB), utilizing highly fluorescent oligonucleotide-functionalized CdSe/CdS and CdSe_1-xS_x/CdS nanorods (NRs) as multicolor hybridization probes. The large surface area of the NRs allows for their easy capture and pulldown, but without contributing significantly to the interparticle photon reabsorption when clustered at the pulldown sites. The NR nanoprobes were specifically designed to target the hotspot regions of the rpoB gene of MTB, which have been implicated in resistance to standard rifampicin treatment. The implementation of the semiconductor NRs as photostable multicolor fluorophores in a multiplexed SP-PCR-based detection scheme allowed for the identification of multiple hotspot regions with sub-picomolar levels of sensitivity and high specificity in artificial sputum. While this work demonstrates the utility of semiconductor NRs as highly fluorescent chromophores that can enable SP-PCR as a sensitive and accurate technique for multipathogen diagnostics, the flexible surface chemistry of the NRs should allow them to be applicable to a wide variety of detection motifs.

The Motion of Trapped Holes on Nanocrystal Surfaces

This Perspective discusses the phenomenon of trapped-hole diffusion in colloidal semiconductor nanocrystals. Surface charge-carrier traps are ubiquitous in nanocrystals and often dictate the fate of photoexcited carriers. New measurements and calculations are unveiling the nature of the nanocrystal surface, but many challenges to understanding the dynamics of trapped carriers remain. In contrast to the view that trapped holes are stationary, we have put forward a series of reports demonstrating that trapped holes on the surfaces of CdS and CdSe nanocrystals are mobile and move between traps in a sequence of hops. We summarize how these findings advance the understanding of carrier dynamics in colloidal nanocrystals and how they may impact a broad set of excited-state behaviors in these materials.

Trap state mediated triplet energy transfer from CdSe quantum dots to molecular acceptors

Triplet energy transfer (TET) from quantum dots (QDs) to molecular acceptors has received intense research interest because of its promising application as triplet sensitizers in photon up-conversion. Compared to QD band edge excitons, the role and mechanism of trap state mediated TET in QD-acceptor complexes have not been well understood despite the prevalence of trap states in many QDs. Herein, TET from trap states in CdSe QDs to adsorbed 9-anthracene carboxylic acid (ACA) is studied with steady state photoluminescence, transient absorption spectroscopy, and time-resolved photoluminescence. We show that both band edge and trap excitons undergo direct Dexter energy transfer to form the triplet excited state of ACA. The rate of TET decreases from (0.340 ± 0.002) ns^-1 to (0.124 ± 0.004) ns^-1 for trap excitons with decreasing energy from 2.25 eV to 1.57 eV, while the TET rate from band edge excitons is 13-37 times faster than trapped excitons. Despite slightly higher TET quantum efficiency from band edge excitons (∼100%) than trapped excitons (∼95%), the overall TET process from CdSe to ACA is dominated by trapped excitons because of their larger relative populations. This result demonstrates the important role of trap state mediated TET in nanocrystal sensitized triplet generation.

Charge Dynamics in Quantum-Dot-Acceptor Complexes in the Presence of Confining and Deconfining Ligands

Nanocrystal surface functionalization is becoming widespread for applications exploiting fast charge extraction or ultrasensitive redox reactions. A variety of molecular acceptors are being linked to the dot surface via a new generation of organic ligands, ranging from neutral linkers to charge delocalizers. Understanding how core states interact with these molecular orbitals, localized outside the dot, is paramount for optimizing the design of efficient nanocrystal-acceptor conjugates. Here we look at two examples of this interaction: charge transfer to a molecular acceptor linked through either an exciton-delocalizing ligand or a more conventional localizing molecule. We find that such transfer can be described in terms of an Auger-mediated process whose rates can be tuned within a window of a few orders of magnitude (for the same dot-ligand-acceptor conjugate) by a suitable choice of the dispersion solvent and nanocrystal's dielectric environment. This result provides clear guidelines for charge extraction rate engineering in nanocrystal-based devices.

Energetics at the Surface: Direct Optical Mapping of Core and Surface Electronic Structure in CdSe Quantum Dots Using Broadband Electronic Sum Frequency Generation Microspectroscopy

Understanding and controlling the electronic structure of nanomaterials is the key to tailoring their use in a wide range of practical applications. Despite this need, many important electronic states are invisible to conventional optical measurements and are typically identified indirectly based on their inferred impact on luminescence properties. This is especially common and important in the study of nanomaterial surfaces and their associated defects. Surface trap states play a crucial role in photophysical processes yet remain remarkably poorly understood. Here we demonstrate for the first time that broadband electronic sum frequency generation (eSFG) microspectroscopy can directly map the optically bright and dark states of nanoparticles, including the elusive below gap states. This new approach is applied to model cadmium selenide (CdSe) quantum dots (QDs), where the energies of surface trap states have eluded direct optical characterization for decades. Our eSFG measurements show clear signatures of electronic transitions both above the band gap, which we assign to previously reported one- and two-photon transitions associated with the CdSe core, as well as broad spectral signatures below the band gap that are attributed to surface states. In addition to the core states, this analysis reveals two distinct distributions of below gap states, providing the first direct optical measurement of both shallow and deep surface states on this system. Finally, chemical modification of the surfaces via oxidation results in the relative increase in the signals originating from the surface states. Overall, our eSFG experiments provide an avenue to directly map the entirety of the QD core and surface electronic structure, which is expected to open up opportunities to study how these materials are grown in situ and how surface states can be controlled to tune functionality.

Temperature-Induced Self-Compensating Defect Traps and Gain Thresholds in Colloidal Quantum Dots

Continuous-wave (CW) lasing was recently achieved in colloidal quantum dots (CQDs) by lowering the threshold through the introduction of biaxial strain. However, the CW laser threshold is still much higher than the femtosecond threshold. This must be addressed before electrically injected lasing can be realized. Here we investigate the relationship between threshold and temperature and find a subpicosecond recombination process that proceeds very efficiently at temperatures reached during CW excitation. We combine density functional theory and molecular dynamics simulations to explore potential candidates for such a process, and find that crystal defects having thermally vibrating energy levels can become electronic traps-i.e., they can protrude into the bandgap-when they are sufficiently distorted at higher temperatures. We find that biaxially strained CQDs, which have a lower femtosecond laser threshold than traditional CQDs, result in less heat for a given transparency/gain level and thus undergo this trapping to a lower extent. We also propose methods to tailor CQDs to avoid self-compensating defect traps.

Role of Surface Morphology on Exciton Recombination in Single Quantum Dot-in-Rods Revealed by Optical and Atomic Structure Correlation

The physical structure of colloidal quantum dot (QD) nanostructures strongly influences their optical and electronic behavior. A fundamental understanding of this interplay between structure and function is crucial to fully tailor the performance of QDs and their assemblies. Here, by directly correlating the atomic and chemical structure of single CdSe-CdS quantum dot-in-rods with time-resolved fluorescence measurements on the same structures, we identify morphological irregularities at their surfaces that moderate photoluminescence efficiencies. We find that two nonradiative exciton recombination mechanisms are triggered by these imperfections: charging and trap-assisted nonradiative processes. Furthermore, we show that the proximity of the surface defects to the CdSe core of the core-shell structures influences whether the charging or trap-assisted nonradiative channel dominates exciton recombination. Our results extend to other QD nanostructures and emphasize surface roughness as a crucial parameter when designing colloidal QDs with specific excitonic fates.

Ultrafast Charge Transfer at a Quantum Dot/2D Materials Interface Probed by Second Harmonic Generation

Hybrid quantum dot (QD)/transition metal dichalcogenide (TMD) heterostructures are attractive components of next generation optoelectronic devices, which take advantage of the spectral tunability of QDs and the charge and exciton transport properties of TMDs. Here, we demonstrate tunable electronic coupling between CdSe QDs and monolayer WS₂ using variable length alkanethiol ligands on the QD surface. Using femtosecond time-resolved second harmonic generation (SHG) microscopy, we show that electron transfer from photoexcited CdSe QDs to single-layer WS₂ occurs on ultrafast (50 fs to 1 ps) time scales. Moreover, in the samples exhibiting the fastest charge transfer rates (≤50 fs) we observed oscillations in the time-domain signal corresponding to an acoustic phonon mode of the donor QD, which coherently modulates the SHG response of the underlying WS₂ layer. These results reveal surprisingly strong electronic coupling at the QD/TMD interface and demonstrate the usefulness of time-resolved SHG for exploring ultrafast electronic-vibrational dynamics in TMD heterostructures.

On the Nature of Trapped-Hole States in CdS Nanocrystals and the Mechanism of Their Diffusion

Recent transient absorption experiments on CdS nanorods suggest that photoexcited holes rapidly trap to the surface of these particles and then undergo diffusion along the rod surface. In this Letter, we present a semiperiodic density functional theory model for the CdS nanocrystal surface, analyze it, and comment on the nature of both the hole-trap states and the mechanism by which the holes diffuse. Hole states near the top of the valence band form an energetic near continuum with the bulk and localize to the nonbonding sp³ orbitals on surface sulfur atoms. After localization, the holes form nonadiabatic small polarons that move between the sulfur orbitals on the surface of the particle in a series of uncorrelated, incoherent, thermally activated hops at room temperature. The surface-trapped holes are deeply in the weak-electronic coupling limit and, as a result, undergo slow diffusion.

Two Mechanisms Determine Quantum Dot Blinking

Many potential applications of quantum dots (QDs) can only be realized once the luminescence from single nanocrystals (NCs) is understood. These applications include the development of quantum logic devices, single-photon sources, long-life LEDs, and single-molecule biolabels. At the single-nanocrystal level, random fluctuations in the QD photoluminescence occur, a phenomenon termed blinking. There are two competing models to explain this blinking: Auger recombination and surface trap induced recombination. Here we use lifetime scaling on core-shell chalcogenide NCs to demonstrate that both types of blinking occur in the same QDs. We prove that Auger-blinking can yield single-exponential on/off times in contrast to earlier work. The surface passivation strategy determines which blinking mechanism dominates. This study summarizes earlier studies on blinking mechanisms and provides some clues that stable single QDs can be engineered for optoelectronic applications.

Sizing Up Excitons in Core-Shell Quantum Dots via Shell-Dependent Photoluminescence Blinking

Semiconductor nanocrystals or quantum dots (QDs) are now widely used across solar cell, display, and bioimaging technologies. While advances in multishell, alloyed, and multinary core-shell QD structures have led to improved light-harvesting and photoluminescence (PL) properties of these nanomaterials, the effects that QD-capping have on the exciton dynamics that govern PL instabilities such as blinking in single-QDs is not well understood. We report experimental measurements of shell-size-dependent absorption and PL intermittency in CdSe-CdS QDs that are consistent with a modified charge-tunnelling, self-trapping (CTST) description of the exciton dynamics in these nanocrystals. By introducing an effective, core-exciton size, which accounts for delocalization of charge carriers across the QD core and shell, we show that the CTST models both the shell-depth-dependent red-shift of the QD band gap and changes in the on/off-state switching statistics that we observe in single-QD PL intensity trajectories. Further analysis of CdSe-ZnS QDs, shows how differences in shell structure and integrity affect the QD band gap and PL blinking within the CTST framework.

Temperature-Dependent Hole Transfer from Photoexcited Quantum Dots to Molecular Species: Evidence for Trap-Mediated Transfer

The effect of temperature on the rate of hole transfer from photoexcited quantum dots (QDs) is investigated by measuring the driving force dependence of the charge transfer rate for different sized QDs across a range of temperatures from 78 to 300 K. Spherical CdSe/CdS core/shell QDs were used with a series of ferrocene-derived molecular hole acceptors with an 800 meV range in electrochemical potential. Time-resolved photoluminescence measurements and photoluminescence quantum yield measurements in an integrating sphere were both performed from 78 to 300 K to obtain temperature-dependent rates for a series of driving forces as dictated by the nature of the molecular acceptor. For both QD sizes studied and all ligands, the Arrhenius plot of hole transfer exhibited an activated (linear) regime at higher temperatures and a temperature-independent regime at low temperatures. The extracted activation energies in the high-temperature regime were consistent across all ligands for a given QD size. This observation is not consistent with direct charge transfer from the QD valence band to the ferrocene acceptor. Instead, a model in which charge transfer is mediated by a shallow and reversible trap more accurately fits the experimental results. Implications for this observed trap-mediated transfer are discussed including as a strategy to more efficiently extract charge from QDs.

Photovoltaic Performance of PbS Quantum Dots Treated with Metal Salts

Recent advances in quantum dot surface passivation have led to a rapid development of high-efficiency solar cells. Another critical element for achieving efficient power conversion is the charge neutrality of quantum dots, as charge imbalances induce electronic states inside the energy gap. Here we investigate how the simultaneous introduction of metal cations and halide anions modifies the charge balance and enhances the solar cell efficiency. The addition of metal salts between QD deposition and ligand exchange with 1,3-BDT results in an increase in the short-circuit current and fill factor, accompanied by a distinct reduction in a crossover between light and dark current density-voltage characteristics.

Ultrafast Charge Dynamics in Trap-Free and Surface-Trapping Colloidal Quantum Dots

Ultrafast transient absorption spectroscopy is used to study subnanosecond charge dynamics in CdTe colloidal quantum dots. After treatment with chloride ions, these can become free of surface traps that produce nonradiative recombination. A comparison between these dots and the same dots before treatment enables new insights into the effect of surface trapping on ultrafast charge dynamics. The surface traps typically increase the rate of electron cooling by 70% and introduce a recombination pathway that depopulates the conduction band minimum of single excitons on a subnanosecond timescale, regardless of whether the sample is stirred or flowed. It is also shown that surface trapping significantly reduces the peak bleach obtained for a particular pump fluence, which has important implications for the interpretation of transient absorption data, including the estimation of absorption cross-sections and multiple exciton generation yields.

Tuning electronic states of a CdSe/ZnS quantum dot by only one functional dye molecule

Self-assembly of only one functionalized porphyrin dye molecule with one CdSe/ZnS quantum dot (QD) not only modifies the photoluminescence (PL) intensity but also creates a few energetically clearly distinguishable electronic states, opening additional effective relaxation pathways. The related energy modifications are in the range of 10-30 meV and show a pronounced sensitivity to the specific nature of the respective dye. We assign the emerging energies to surface states. Time-resolved PL spectroscopy in combination with spectral deconvolution reveals that surface properties of QDs are a complex interplay of the nature of the dye molecule and the topography of the ligand layer across a temperature range from 77 to 290 K. This includes a kind of phase transition of trioctylphosphine oxide ligands, switching the nature of surface states observed below and above the phase transition temperature. Most importantly, our findings can be closely related to recent calculations of ligand-induced modifications of surface states of QDs. The identification of the optical properties emerged from a combination of spectroscopy on single QDs and QDs in an ensemble.

Origins of photoluminescence decay kinetics in CdTe colloidal quantum dots

Recent experimental studies have identified at least two nonradiative components in the fluorescence decay of solutions of CdTe colloidal quantum dots (CQDs). The lifetimes reported by different groups, however, differed by orders of magnitude, raising the question of whether different types of traps were at play in the different samples and experimental conditions and even whether different types of charge carriers were involved in the different trapping processes. Considering that the use of these nanomaterials in biology, optoelectronics, photonics, and photovoltaics is becoming widespread, such a gap in our understanding of carrier dynamics in these systems needs addressing. This is what we do here. Using the state-of-the-art atomistic semiempirical pseudopotential method, we calculate trapping times and nonradiative population decay curves for different CQD sizes considering up to 268 surface traps. We show that the seemingly discrepant experimental results are consistent with the trapping of the hole at unsaturated Te bonds on the dot surface in the presence of different dielectric environments. In particular, the observed increase in the trapping times following air exposure is attributed to the formation of an oxide shell on the dot surface, which increases the dielectric constant of the dot environment. Two types of traps are identified, depending on whether the unsaturated bond is single (type I) or part of a pair of dangling bonds on the same Te atom (type II). The energy landscape relative to transitions to these traps is found to be markedly different in the two cases. As a consequence, the trapping times associated with the different types of traps exhibit a strikingly contrasting sensitivity to variations in the dot environment. Based on these characteristics, we predict the presence of a sub-nanosecond component in all photoluminescence decay curves of CdTe CQDs in the size range considered here if both trap types are present. The absence of such a component is attributed to the suppression of type I traps.

Surface dangling bonds are a cause of B-type blinking in Si nanoparticles

Exponential blinking statistics was reported in oxidized Si nanoparticles and the switching mechanism was attributed to the activation and deactivation of unidentified nonradiative recombination centers. Using ab initio calculations we predicted that Si dangling bonds at the surface of oxidized nanoparticles introduce defect states which, depending on their charge and local stress conditions, may give rise to ON and OFF states responsible for exponential blinking statistics. Our results are based on first principles calculations of charge transition levels, single particle energies, and radiative and nonradiative lifetimes of dangling bond defects at the surface of oxidized silicon nanoparticles under stress.

Correlation of atomic structure and photoluminescence of the same quantum dot: pinpointing surface and internal defects that inhibit photoluminescence

In a size regime where every atom counts, rational design and synthesis of optimal nanostructures demands direct interrogation of the effects of structural divergence of individuals on the ensemble-averaged property. To this end, we have explored the structure-function relationship of single quantum dots (QDs) via precise observation of the impact of atomic arrangement on QD fluorescence. Utilizing wide-field fluorescence microscopy and atomic number contrast scanning transmission electron microscopy (Z-STEM), we have achieved correlation of photoluminescence (PL) data and atomic-level structural information from individual colloidal QDs. This investigation of CdSe/CdS core/shell QDs has enabled exploration of the fine structural factors necessary to control QD PL. Additionally, we have identified specific morphological and structural anomalies, in the form of internal and surface defects, that consistently vitiate QD PL.

Effect of Chloride Passivation on Recombination Dynamics in CdTe Colloidal Quantum Dots

Colloidal quantum dots (CQDs) can be used in conjunction with organic charge-transporting layers to produce light-emitting diodes, solar cells and other devices. The efficacy of CQDs in these applications is reduced by the non-radiative recombination associated with surface traps. Here we investigate the effect on the recombination dynamics in CdTe CQDs of the passivation of these surface traps by chloride ions. Radiative recombination dominates in these passivated CQDs, with the radiative lifetime scaling linearly with CQD volume over τ_r=20–55 ns. Before chloride passivation or after exposure to air, two non-radiative components are also observed in the recombination transients, with sample-dependent lifetimes typically of less than 1 ns and a few ns. The non-radiative dynamics can be explained by Auger-mediated trapping of holes and the lifetimes of this process calculated by an atomistic model are in agreement with experimental values if assuming surface oxidation of the CQDs.

Exciton–phonon scattering and nonradiative relaxation of excited carriers in hydrothermally synthesized CdTe quantum dots

The strength of the exciton–LO-phonon coupling, as reflected in the Huang–Rhys parameter ‘S’, is found to increase from 1.13 to 1.51 with a reduction in CdTe QD size from 4.8 to 3.0 nm.

Hole Surface Trapping Dynamics Directly Monitored by Electron Spin Manipulation in CdS Nanocrystals

A new detection technique, pump-spin orientation-probe ultrafast spectroscopy, is developed to study the hole trapping dynamics in colloidal CdS nanocrystals. The hole surface trapping process spatially separates the electron-hole pairs excited by the pump pulse, leaves the core negatively charged, and thus enhances the electron spin signal generated by the orientation pulse. The spin enhancement transients as a function of the pump-orientation delay reveal a fast and a slow hole trapping process with respective time constants of sub-10 ps and sub-100 ps, orders of magnitude faster than that of carrier recombination. The power dependence of hole trapping dynamics elucidates the saturation process and relative number of traps, and suggests that there are three subpopulations of nanoparticles related to hole surface trapping, one with the fast trapping pathway only, another with the slow trapping pathway only, and the third with both pathways together.

The fluorescence intermittency for quantum dots is not power-law distributed: a luminescence intensity resolved approach

The photoluminescence (PL) of single emitters like semiconductor quantum dots (QDs) shows PL intermittency, often called blinking. We explore the PL intensities of single CdSe/ZnS QDs in polystyrene (PS), on polyvenylalcohol (PVA), and on silicon oxide (SiOx) by the change-point analysis (CPA). By this, we relate results from the macrotime (sub-ms to 1000 s) and the microtime (0.1-100 ns) range to discrete PL intensities. We conclude that the intensity selected "on"-times in the ms range correspond to only a few (discrete) switching times, while the PL decays in the ns range are multiexponential even with respect to the same selected PL intensity. Both types of relaxation processes depend systematically on the PL intensity in course of a blinking time trace. The overall distribution of on-times does not follow a power law contrary to what has often been reported but can be compiled into 3-4 characteristic on-times. The results can be explained by the recently suggested multiple recombination centers model. Additionally, we can identify a well-defined QD state with a very low PL intensity above the noise level, which we assign to the strongly quenched exciton state. We describe our findings by a model of a hierarchical sequence of hole and electron trapping. Blinking events are the consequence of slow switching processes among these states and depend on the physicochemical properties of the heterogeneous nanointerface of the QDs.

25th anniversary article: Colloidal quantum dot materials and devices: a quarter-century of advances

Colloidal quantum dot (CQD) optoelectronics offers a compelling combination of low-cost, large-area solution processing, and spectral tunability through the quantum size effect. Since early reports of size-tunable light emission from solution-synthesized CQDs over 25 years ago, tremendous progress has been made in synthesis and assembly, optical and electrical properties, materials processing, and optoelectronic applications of these materials. Here some of the major developments in this field are reviewed, touching on key milestones as well as future opportunities.

Universal trapping mechanism in semiconductor nanocrystals

Size tunability of the optical properties and inexpensive synthesis make semiconductor nanocrystals one of the most promising and versatile building blocks for many modern applications such as lasers, single-electron transistors, solar cells, and biological labels. The performance of these nanocrystal-based devices is however compromised by efficient trapping of the charge carriers. This process exhibits different features depending on the nanocrystal material, surface termination, size, and trap location, leading to the assumption that different mechanisms are at play in each situation. Here we revolutionize this fragmented picture and provide a unified interpretation of trapping dynamics in semiconductor nanocrystals by identifying the origins of this so far elusive detrimental process. Our findings pave the way for a general suppression strategy, applicable to any system, which can lead to a simultaneous efficiency enhancement in all nanocrystal-based technologies.

PbSe quantum dot field-effect transistors with air-stable electron mobilities above 7 cm2 V(-1) s(-1)

PbSe quantum dot (QD) field effect transistors (FETs) with air-stable electron mobilities above 7 cm(2) V(-1) s(-1) are made by infilling sulfide-capped QD films with amorphous alumina using low-temperature atomic layer deposition (ALD). This high mobility is achieved by combining strong electronic coupling (from the ultrasmall sulfide ligands) with passivation of surface states by the ALD coating. A series of control experiments rule out alternative explanations. Partial infilling tunes the electrical characteristics of the FETs.