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Qiao J, Ran H, Zhou Q, Qiao R, Lyu Z, Gao X, Liu Y, Yan J, Chen P. Gram-Scale Synthesis of Black Phosphorus through Shock-Induced Phase Transformation. Inorg Chem 2024; 63:5378-5388. [PMID: 38481134 DOI: 10.1021/acs.inorgchem.3c03965] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/26/2024]
Abstract
This article presents the utilization of a cylindrical double-tube shock loading device in conjunction with amorphous red phosphorus as the precursor to investigate the complete phase transformation of red phosphorus into black phosphorus under the influence of shockwaves. Multiple experiments were conducted by varying the shock pressure and temperature parameters. The characterization of the recovered samples involved analysis of the phase composition and microstructure. The obtained experimental results demonstrate that within the cylindrical double-tube shock loading setup, a pressure of 9 GPa and a temperature of 800 K are optimal for achieving the complete phase transition of amorphous red phosphorus into orthorhombic black phosphorus. By precisely controlling these experimental conditions, a high-quality orthorhombic black phosphorus powder with excellent crystallinity was successfully prepared. This method offers several advantages, including simplicity, cost-effectiveness, and high yield. Consequently, this presents a promising pathway for the industrial-scale production of black phosphorus. The implementation of this approach not only reduces the cost involved in black phosphorus synthesis but also contributes to the broad range of applications for this material.
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Affiliation(s)
- Jinchao Qiao
- State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, 100081 Beijing, China
| | - Haotian Ran
- Chongqing Hongyu Precision Industrial Co LTD., 402760 Chongqing, China
| | - Qiang Zhou
- China Research and Development, Academy of Machinery Equipment, 100089 Beijing, China
| | - Rufei Qiao
- Army Infantry Academy, 330103 Nanchang, China
| | - Zhuwen Lyu
- Ningbo Branch, Ordnance Science Institute of China, 315103 Ningbo, China
| | - Xin Gao
- State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, 100081 Beijing, China
| | - Yan Liu
- State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, 100081 Beijing, China
| | - Junbo Yan
- State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, 100081 Beijing, China
| | - Pengwan Chen
- State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, 100081 Beijing, China
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2
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Teja YN, Sakar M. Comprehensive Insights into the Family of Atomically Thin 2D-Materials for Diverse Photocatalytic Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303980. [PMID: 37461252 DOI: 10.1002/smll.202303980] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2023] [Revised: 07/05/2023] [Indexed: 11/16/2023]
Abstract
2D materials with their fascinating physiochemical, structural, and electronic properties have attracted researchers and have been used for a variety of applications such as electrocatalysis, photocatalysis, energy storage, magnetoresistance, and sensing. In recent times, 2D materials have gained great momentum in the spectrum of photocatalytic applications such as pollutant degradation, water splitting, CO2 reduction, NH3 production, microbial disinfection, and heavy metal reduction, thanks to their superior properties including visible light responsive band gap, improved charge separation and electron mobility, suppressed charge recombination and high surface reactive sites, and thus enhance the photocatalytic properties rationally as compared to 3D and other low-dimensional materials. In this context, this review spot-lights the family of various 2D materials, their properties and their 2D structure-induced photocatalytic mechanisms while giving an overview on their synthesis methods along with a detailed discussion on their diverse photocatalytic applications. Furthermore, the challenges and the future opportunities are also presented related to the future developments and advancements of 2D materials for the large-scale real-time photocatalytic applications.
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Affiliation(s)
- Y N Teja
- Centre for Nano and Material Sciences, Jain (Deemed to be) University, Jain Global Campus, Kanakapura, Bangalore, Karnataka, 562112, India
| | - Mohan Sakar
- Centre for Nano and Material Sciences, Jain (Deemed to be) University, Jain Global Campus, Kanakapura, Bangalore, Karnataka, 562112, India
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3
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Yazdanpanah
Goharrizi A, Barzoki AM, Selberherr S, Filipovic L. A Theoretical Study of Armchair Antimonene Nanoribbons in the Presence of Uniaxial Strain Based on First-Principles Calculations. ACS APPLIED ELECTRONIC MATERIALS 2023; 5:4514-4522. [PMID: 37637974 PMCID: PMC10448714 DOI: 10.1021/acsaelm.3c00686] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 07/11/2023] [Indexed: 08/29/2023]
Abstract
The optimized geometry and also the electronic and transport properties of passivated edge armchair antimonene nanoribbons (ASbNRs) are studied using ab initio calculations. Due to quantum confinement, the size of the bandgap can be modulated from 1.2 eV to 2.4 eV (indirect), when the width is reduced from 5 nm to 1 nm, respectively. This study focuses on nanoribbons with a width of 5 nm (5-ASbNR) due to its higher potential for fabrication and an acceptable bandgap for electronic applications. Applying uniaxial compressive and tensile strain results in a reduction of the bandgap of the 5-ASbNR film. The indirect to direct bandgap transition was observed, when introducing a tensile strain of more than +4%. Moreover, when a compressive strain above 9% is introduced, semi-metallic behavior can be observed. By applying compressive (tensile) strain, the hole (electron) effective mass is reduced, thereby increasing the mobility of charge carriers. The study demonstrates that the carrier mobility of ASbNR-based nanoelectronic devices can be modulated by applying tensile or compressive strain on the ribbons.
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Affiliation(s)
| | - Ali Molajani Barzoki
- Department
of Electrical Engineering, Shahid Beheshti
University, Tehran IR19395, Iran
| | | | - Lado Filipovic
- Institute
for Microelectronics, Technische Universität Wien, 1040 Wien, Austria
- CDL
for Multi-Scale Process Modeling of Semiconductor Devices and Sensors
at the CD0509, 1040 Vienna, Austria
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4
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Rezania H, Abdi M, Nourian E, Astinchap B. Effects of spin-orbit coupling on transmission and absorption of electromagnetic waves in strained armchair phosphorene nanoribbons. RSC Adv 2023; 13:22287-22301. [PMID: 37492510 PMCID: PMC10364790 DOI: 10.1039/d3ra03686c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Accepted: 06/29/2023] [Indexed: 07/27/2023] Open
Abstract
We compute the optical conductivity, both the imaginary and real parts of the dielectric constant, and the optical coefficients of armchair phosphorene nanoribbons under application of biaxial and uniaxial strains. The Kane-Mele model Hamiltonian has been applied to obtain the electronic band structure of phosphorene nanoribbons in the presence of a magnetic field. The effects of uniaxial and biaxial in-plane strain on the frequency behavior of the optical dielectric constant, and the frequency behavior of the optical absorption and refractive index of phosphorene nanoribbons have been studied, in terms of magnetic field, spin-orbit coupling and strain effects. Linear response theory and the Green's function approach have been exploited to obtain the frequency behavior of the optical properties of the structure. Moreover, the transmissivity and reflectivity of electromagnetic waves between two media separated by a phosphorene-nanoribbon layer are determined. Our numerical results indicate that the frequency dependence of the optical absorption includes a peak due to applying a magnetic field. Moreover, the effects of both in-plane uniaxial and biaxial strains on the refractive index of single-layer phosphorene have been addressed. Also, the frequency dependence of the transmissivity and reflectivity of electromagnetic waves between two media separated by armchair phosphorene nanoribbons for normal incidence has been investigated in terms of the effects of magnetic field and strain parameters. Both compressive and tensile strain have been considered for the armchair phosphorene nanoribbons in order to study the optical properties of the structure. In particular, the control of the optical properties of phosphorene nanoribbons could lead to extensive applications of phosphorene in the optoelectronics industry. Also, such a study of the optical properties of phosphorene nanoribbons has further applications in light sensors. Meanwhile, the effects of spin-orbit coupling on the optical absorption and transmissivity of electromagnetic waves in phosphorene nanoribbons could be a novel topic in condensed-matter physics.
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Affiliation(s)
- H Rezania
- Department of Physics, Razi University Kermanshah Iran +98 831 427 4569 +98 831 427 4569
| | - M Abdi
- Department of Physics, Faculty of Science, University of Kurdistan 66177-15175 Sanandaj Kurdistan Iran
| | - E Nourian
- Department of Physics, Faculty of Science, University of Kurdistan 66177-15175 Sanandaj Kurdistan Iran
| | - B Astinchap
- Department of Physics, Faculty of Science, University of Kurdistan 66177-15175 Sanandaj Kurdistan Iran
- Research Center for Nanotechnology, University of Kurdistan 66177-15175 Sanandaj Kurdistan Iran
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5
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Duan X, Zhou B, Wang X, Mi W. Two dimensional Zr 2CO 2/H-FeCl 2van der Waals heterostructures with tunable band gap, potential difference and magnetic anisotropy. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 51:024001. [PMID: 36322999 DOI: 10.1088/1361-648x/ac9f99] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2022] [Accepted: 11/01/2022] [Indexed: 06/16/2023]
Abstract
Two dimensional (2D) van der Waals (vdW) heterostructures have potential applications in novel low dimensional spintronic devices due to their unique electronic and magnetic properties. Here, the electronic and magnetic properties of 2D Zr2CO2/H-FeCl2heterostructures are calculated by first principles calculations. The 2D Zr2CO2/H-FeCl2heterostructures are magnetic semiconductor. The electronic structure and magnetic anisotropy of Zr2CO2/H-FeCl2heterostructure can be regulated by the biaxial strain and external electric field. The band gap and potential difference of Zr2CO2/H-FeCl2heterostructure can be affected by in-plane biaxial strain. At a compressive strain of -8%, the Zr2CO2/H-FeCl2heterostructure becomes metallic. All of the Zr2CO2/H-FeCl2heterostructures are magnetic with in-plane magnetic anisotropy (IMA). The Zr2CO2/H-FeCl2heterostructure is a semiconductor at the electric field from -0.5 V Å-1to +0.5 V Å-1. Furthermore, Zr2CO2/H-FeCl2heterostructure shows IMA at the negative electric field, while it shows perpendicular magnetic anisotropy at the positive electric field. These results show that Zr2CO2/H-FeCl2heterostructure has potential applications in multifunctionalnanoelectronic devices.
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Affiliation(s)
- Xianghui Duan
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Xiaocha Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, People's Republic of China
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, People's Republic of China
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6
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Liu Z, Wang H, Cao H, Xie D, Li C, Yang H, Yao W, Cheetham AK. Ultratough Hydrogen-Bond-Bridged Phosphorene Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203332. [PMID: 35929459 DOI: 10.1002/adma.202203332] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2022] [Revised: 07/31/2022] [Indexed: 06/15/2023]
Abstract
The rapid development of flexible electronic devices, especially based on 2D materials, has triggered the demand for high-strength materials. Mono- or few-layer phosphorene with excellent electronic properties has attracted extensive attention. However, phosphorene is affected by its low Young's modulus when applied to flexible electronic devices. Here, a strategy via ion intercalation to significantly improve the mechanical properties of black phosphorus to generate hydrogen-bond-bridged phosphorene films with Young's modulus as high as 316 GPa is reported. This value is several times larger than the theoretical values of 166 GPa in the zigzag direction, 44 GPa in the armchair direction, and the averaged Young's modulus among all directions of 94 GPa. The impact of intercalation on mechanical properties is also explored. Experimental nanoindentation results obtained by atomic force microscopy indicate that the relationship between the ratio of intercalated ions to phosphorus atoms and the corresponding Young's modulus satisfies the formula E = e a e - [ ln ( x ) + b ] 2 c ( 0 < x ≤ 1.80 ) \[E{\bm{ = }}{e^{a{e^{\frac{{{\bm{ - }}{{[\ln (x){\bm{ + }}b]}^2}}}{c}}}}}(0{\bm{ < }}x{\bm{ \le }}1.80)\] . Furthermore, a flexible NO2 gas sensor device based on this ultratough material presents excellent performance, even after 10 000 bending cycles. The results provide new insight into the potential for practical applications of black phosphorus devices.
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Affiliation(s)
- Zhifang Liu
- Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Huaipeng Wang
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, P. R. China
| | - Huaqiang Cao
- Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Dan Xie
- School of Integrated Circuits, Tsinghua University, Beijing, 100084, P. R. China
| | - Chun Li
- Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Haijun Yang
- Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Wenqing Yao
- Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Anthony K Cheetham
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK
- Materials Research Laboratory, University of California, Santa Barbara, CA, 93106, USA
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117576, Singapore
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7
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Anisotropic black phosphorene nanotube anodes afford ultrafast kinetic rate or extra capacities for Li-ion batteries. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2021.11.030] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
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8
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Ou J, Zhang Q. Enhanced Spin Thermopower in Phosphorene Nanoribbons via Edge-State Modifications. NANOMATERIALS 2022; 12:nano12142350. [PMID: 35889576 PMCID: PMC9319201 DOI: 10.3390/nano12142350] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/03/2022] [Revised: 07/03/2022] [Accepted: 07/07/2022] [Indexed: 12/04/2022]
Abstract
We investigated spin-dependent thermoelectric transport in zigzag phosphorene nanoribbons with a ferromagnetic stripe. We explored the possibility to enhance the spin thermopower via modifications of the edge states in zigzag ribbons. Two methods are proposed to modulate the edge transport: one is applying gate voltages on the edges; the other is including notches on the ribbon edges. The transport gap is enlarged by the edge-state modifications, which enhance the charge and spin Seebeck coefficients almost twofold. Our results suggest phosphorene to be a promising material for thermoelectric applications and open a possibility to design a tunable spin-thermoelectric device.
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Affiliation(s)
- Junheng Ou
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China;
| | - Qingtian Zhang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China;
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou 510006, China
- Correspondence:
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9
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Miao Y, Zhao Y, Zhang S, Shi R, Zhang T. Strain Engineering: A Boosting Strategy for Photocatalysis. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200868. [PMID: 35304927 DOI: 10.1002/adma.202200868] [Citation(s) in RCA: 40] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2022] [Revised: 03/02/2022] [Indexed: 06/14/2023]
Abstract
Whilst the photocatalytic technique is considered to be one of the most significant routes to address the energy crisis and global environmental challenges, the solar-to-chemical conversion efficiency is still far from satisfying practical industrial requirements, which can be traced to the suboptimal bandgap and electronic structure of photocatalysts. Strain engineering is a universal scheme that can finely tailor the bandgap and electronic structure of materials, hence supplying a novel avenue to boost their photocatalytic performance. Accordingly, to explore promising directions for certain breakthroughs in strained photocatalysts, an overview on the recent advances of strain engineering from the basics of strain effect, creations of strained materials, as well as characterizations and simulations of strain level is provided. Besides, the potential applications of strain engineering in photocatalysis are summarized, and a vision for the future controllable-electronic-structure photocatalysts by strain engineering is also given. Finally, perspectives on the challenges for future strain-promoted photocatalysis are discussed, placing emphasis on the creation and decoupling of strain effect, and the modification of theoretical frameworks.
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Affiliation(s)
- Yingxuan Miao
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yunxuan Zhao
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Shuai Zhang
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Run Shi
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Tierui Zhang
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
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10
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Fu L, Wang X, Mi W. Spin‐Dependent Electronic Structure and Magnetic Properties of 2D JANUS Mn
2
CFCl/CuBiP
2
Se
6
Van Der Waals Multiferroic Heterostructures. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202100302] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Luqian Fu
- Tianjin Key Laboratory of Film Electronic & Communicate Devices School of Integrated Circuit Science and Engineering Tianjin University of Technology Tianjin 300384 China
| | - Xiaocha Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices School of Integrated Circuit Science and Engineering Tianjin University of Technology Tianjin 300384 China
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology School of Science Tianjin University Tianjin 300354 China
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11
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Yu W, Yang J, Li J, Zhang K, Xu H, Zhou X, Chen W, Loh KP. Facile Production of Phosphorene Nanoribbons towards Application in Lithium Metal Battery. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102083. [PMID: 34292638 DOI: 10.1002/adma.202102083] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2021] [Revised: 06/16/2021] [Indexed: 06/13/2023]
Abstract
Like phosphorene, phosphorene nanoribbon (PNR) promises exotic properties but unzipping phosphorene into edge-defined PNR is non-trivial because of uncontrolled cutting of phosphorene along random directions. Here a facile electrochemical strategy to fabricate zigzag-edged PNRs in high yield (>80%) is reported. The presence of chemically active zigzag edges in PNR allows it to spontaneously react with Li to form a Li+ ion conducting Li3 P phase, which can be used as a protective layer on Li metal anode in lithium metal batteries (LMBs). PNR protective layer prevents the parasitic reaction between lithium metal and electrolyte and promotes Li+ ion diffusion kinetics, enabling homogenous Li+ ion flux and long-time cycling stability up to 1100 h at a current density of 1 mA cm-2 . LiFePO4 |PNR-Li full-cell batteries with an areal capacity of 2 mAh cm-2 , a lean electrolyte (20 µl mAh-1 ) and a negative/positive (N/P) electrodes ratio of 3.5 can be stably cycled over 100 cycles.
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Affiliation(s)
- Wei Yu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Jinlin Yang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Jing Li
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Kun Zhang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Haomin Xu
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Xin Zhou
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Wei Chen
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore, 117542, Singapore
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
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12
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Xia M, Liu H, Wang L, Li S, Gao J, Su Y, Zhao J. Robust charge spatial separation and linearly tunable band gap of low-energy tube-edge phosphorene nanoribbon. NANOSCALE ADVANCES 2021; 3:4416-4423. [PMID: 36133464 PMCID: PMC9417856 DOI: 10.1039/d1na00332a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/06/2021] [Accepted: 05/29/2021] [Indexed: 06/16/2023]
Abstract
Versatile applications have been proposed for phosphorene nanoribbons (PNRs), whose properties depend strongly on the edge structures. Recently, a unique tube-reconstruction at the zigzag edge (ZZ[Tube]) of PNRs was discovered to be the lowest configuration. Therefore, studies on PNRs should be reconsidered. In this paper, we systemically explore the width and strain effects on zigzag PNRs with different edge structures, including ZZ[Tube], ZZ and ZZ[ad] edges. ZZ PNRs always have small band gaps which are nearly independent of both width and strain. A remarkable band gap exists in ZZ[ad] PNRs which increases with a decrease in the ribbon width but is not sensitive to strain. In contrast, the band gaps of ZZ[Tube] PNRs change from 1.08 to 0.70 eV as the width increases from 12 to 65 Å. In addition, the band gaps of ZZ[Tube] PNRs show a linear response under a certain range of strain. In addition, the carrier effective masses (0.50 m 0 for electrons and 0.94 m 0 for holes) of ZZ[Tube] PNRs are much lower than for ZZ[ad], and the VBM and CBM charges are robustly spatially separated even under strains ranging from -5% to 5%. Their ease of formation, lowest energy, light effective mass, linear band gap response to strain and robust charge spatial separation provide ZZ[Tube] PNRs with potentially excellent performance in microelectronic and opto-electric applications.
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Affiliation(s)
- Mingyue Xia
- Key Laboratory of Material Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education Dalian 116024 China
| | - Hongsheng Liu
- Key Laboratory of Material Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education Dalian 116024 China
| | - Lu Wang
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University Suzhou Jiangsu 215123 China
| | - ShiQi Li
- Key Laboratory of Material Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education Dalian 116024 China
| | - Junfeng Gao
- Key Laboratory of Material Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education Dalian 116024 China
| | - Yan Su
- Key Laboratory of Material Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education Dalian 116024 China
| | - Jijun Zhao
- Key Laboratory of Material Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education Dalian 116024 China
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13
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Alzakia FI, Tan SC. Liquid-Exfoliated 2D Materials for Optoelectronic Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2003864. [PMID: 34105282 PMCID: PMC8188210 DOI: 10.1002/advs.202003864] [Citation(s) in RCA: 33] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2020] [Revised: 01/19/2021] [Indexed: 05/14/2023]
Abstract
Two-dimensional (2D) materials have attracted tremendous research attention in recent days due to their extraordinary and unique properties upon exfoliation from the bulk form, which are useful for many applications such as electronics, optoelectronics, catalysis, etc. Liquid exfoliation method of 2D materials offers a facile and low-cost route to produce large quantities of mono- and few-layer 2D nanosheets in a commercially viable way. Optoelectronic devices such as photodetectors fabricated from percolating networks of liquid-exfoliated 2D materials offer advantages compared to conventional devices, including low cost, less complicated process, and higher flexibility, making them more suitable for the next generation wearable devices. This review summarizes the recent progress on metal-semiconductor-metal (MSM) photodetectors fabricated from percolating network of 2D nanosheets obtained from liquid exfoliation methods. In addition, hybrids and mixtures with other photosensitive materials, such as quantum dots, nanowires, nanorods, etc. are also discussed. First, the various methods of liquid exfoliation of 2D materials, size selection methods, and photodetection mechanisms that are responsible for light detection in networks of 2D nanosheets are briefly reviewed. At the end, some potential strategies to further improve the performance the devices are proposed.
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Affiliation(s)
- Fuad Indra Alzakia
- Department of Materials Science and EngineeringNational University of Singapore9 Engineering drive 1Singapore117574Singapore
| | - Swee Ching Tan
- Department of Materials Science and EngineeringNational University of Singapore9 Engineering drive 1Singapore117574Singapore
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14
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Gao Y, Zhou B, Wang X. Biaxial strain, electric field and interlayer distance-tailored electronic structure and magnetic properties of two-dimensional g-C 3N 4/Li-adsorbed Cr 2Ge 2Te 6 van der Waals heterostructures. Phys Chem Chem Phys 2021; 23:6171-6181. [PMID: 33687408 DOI: 10.1039/d1cp00003a] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Recently, it has been proven that the biaxial strain (ε), electric field (E) and interlayer distance (d) can effectively modulate the electronic structure and magnetic properties of two-dimensional (2D) van der Waals (vdW) heterostructures, which have potential applications in spintronic devices. Here, the electronic structure and magnetic properties of 2D g-C3N4/Li-adsorbed Cr2Ge2Te6 vdW heterostructures are investigated using first-principles calculations. Their lattice structures are seriously affected by adsorption combination. With external stimulation, the band gap of the heterostructures changes. The heterostructures are metallic at ε = -6% and -4%, and others are n-type semiconductors, where the band gap is 23 meV at ε = 6%. In addition, the magnetic moments of g-C3N4 in the adsorption systems are in the range from 0.029 to 0.226 μB. The vdW heterostructures show in-plane magnetic anisotropy (IMA) at ε = -6%, -2% and 6% and perpendicular magnetic anisotropy (PMA) at ε = -4%, 0, 2% and 4%. On applying an electric field and changing the interlayer distance, the vdW heterostructures show PMA. These results are significant to the low-dimensional spintronic devices.
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Affiliation(s)
- Yaoqi Gao
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Xiaocha Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electrical and Electronic Engineering, Tianjin University of Technology, Tianjin 300384, China.
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15
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Liu Y, Li D, Cui T. Edge reconstructions of black phosphorene: a global search. NANOSCALE 2021; 13:4085-4091. [PMID: 33566039 DOI: 10.1039/d0nr08505g] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Despite reports of possible edge reconstructions of black phosphorene, the underlying mechanisms that determine the atomic configurations and appearance of black phosphorene edges have not been elucidated to date. In this study, the particle swarm optimization (PSO) algorithm is used to perform a global search of black phosphorene edge structures. In addition to the most stable edges, three databases of the typical black phosphorene zigzag edge, armchair edge, and skewed diagonal edge are constructed for the first time. The local phosphorus concentration plays an important role in determining the edge atomic configurations and the appearance of an edge. Variations in the local phosphorus concentration result in the rearrangement of sp3-hybrid bonds or the formation of double bonds that balance the dangling bonds at the edges and stabilize the black phosphorene edges. The black phosphorene edge databases provide a useful reference for edge studies of other 2D materials with puckered honeycomb structures.
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Affiliation(s)
- Yue Liu
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, P. R. China.
| | - Da Li
- State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, P. R. China.
| | - Tian Cui
- School of Physical Science and Technology, Ningbo University, Ningbo 315211, P.R. China and State Key Lab of Superhard Materials, College of Physics, Jilin University, Changchun 130012, P. R. China.
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16
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Han Y, Zhou J, Wang H, Gao L, Feng S, Cao K, Xu Z, Lu Y. Experimental nanomechanics of 2D materials for strain engineering. APPLIED NANOSCIENCE 2021. [DOI: 10.1007/s13204-021-01702-0] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
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17
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Eke J, Banks L, Mottaleb MA, Morris AJ, Tsyusko OV, Escobar IC. Dual-Functional Phosphorene Nanocomposite Membranes for the Treatment of Perfluorinated Water: An Investigation of Perfluorooctanoic Acid Removal via Filtration Combined with Ultraviolet Irradiation or Oxygenation. MEMBRANES 2020; 11:membranes11010018. [PMID: 33375603 PMCID: PMC7824437 DOI: 10.3390/membranes11010018] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2020] [Revised: 12/10/2020] [Accepted: 12/21/2020] [Indexed: 01/06/2023]
Abstract
Nanomaterials with tunable properties show promise because of their size-dependent electronic structure and controllable physical properties. The purpose of this research was to develop and validate environmentally safe nanomaterial-based approach for treatment of drinking water including removal and degradation of per- and polyfluorinated chemicals (PFAS). PFAS are surfactant chemicals with broad uses that are now recognized as contaminants with a significant risk to human health. They are commonly used in household and industrial products. They are extremely persistent in the environment because they possess both hydrophobic fluorine-saturated carbon chains and hydrophilic functional groups, along with being oleophobic. Traditional drinking water treatment technologies are usually ineffective for the removal of PFAS from contaminated waters, because they are normally present in exiguous concentrations and have unique properties that make them persistent. Therefore, there is a critical need for safe and efficient remediation methods for PFAS, particularly in drinking water. The proposed novel approach has also a potential application for decreasing PFAS background levels in analytical systems. In this study, nanocomposite membranes composed of sulfonated poly ether ether ketone (SPEEK) and two-dimensional phosphorene were fabricated, and they obtained on average 99% rejection of perfluorooctanoic acid (PFOA) alongside with a 99% removal from the PFOA that accumulated on surface of the membrane. The removal of PFOA accumulated on the membrane surface achieved 99% after the membranes were treated with ultraviolet (UV) photolysis and liquid aerobic oxidation.
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Affiliation(s)
- Joyner Eke
- Center of Membrane Sciences, Department of Chemical and Materials Engineering, University of Kentucky, 177 FPAT, Lexington, KY 40506-0046, USA; (J.E.); (L.B.)
| | - Lillian Banks
- Center of Membrane Sciences, Department of Chemical and Materials Engineering, University of Kentucky, 177 FPAT, Lexington, KY 40506-0046, USA; (J.E.); (L.B.)
| | - M. Abdul Mottaleb
- College of Medicine, University of Kentucky, 177 FPAT, Lexington, KY 40506-0046, USA; (M.A.M.); (A.J.M.)
- Institute of Drug & Biotherapeutic Innovation, Saint Louis University, 1100 South Grand Blvd, Saint Louis, MO 63104, USA
| | - Andrew J. Morris
- College of Medicine, University of Kentucky, 177 FPAT, Lexington, KY 40506-0046, USA; (M.A.M.); (A.J.M.)
| | - Olga V. Tsyusko
- Department of Plant and Soil Sciences, University of Kentucky, 1100 S. Limestone St., Lexington, KY 40546-0091, USA;
| | - Isabel C. Escobar
- Center of Membrane Sciences, Department of Chemical and Materials Engineering, University of Kentucky, 177 FPAT, Lexington, KY 40506-0046, USA; (J.E.); (L.B.)
- Correspondence:
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18
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Khan AR, Liu B, Lü T, Zhang L, Sharma A, Zhu Y, Ma W, Lu Y. Direct Measurement of Folding Angle and Strain Vector in Atomically Thin WS 2 Using Second-Harmonic Generation. ACS NANO 2020; 14:15806-15815. [PMID: 33179915 DOI: 10.1021/acsnano.0c06901] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Structural engineering techniques such as local strain engineering and folding provide functional control over critical optoelectronic properties of 2D materials. Local strain engineering at the nanoscale level is practically achieved via permanently deformed wrinkled nanostructures, which are reported to show photoluminescence enhancement, bandgap modulation, and funneling effect. Folding in 2D materials is reported to tune optoelecronic properties via folding angle dependent interlayer coupling and symmetry variation. The accurate and efficient monitoring of local strain vector and folding angle is important to optimize the performance of optoelectronic devices. Conventionally, the accurate measurement of both strain amplitude and strain direction in wrinkled nanostructures requires the combined usage of multiple tools resulting in manufacturing lead time and cost. Here, we demonstrate the usage of a single tool, polarization-dependent second-harmonic generation (SHG), to determine the folding angle and strain vector accurately and efficiently in ultrathin WS2. The folding angle in trilayer WS2 folds exhibiting 1-9 times SHG enhancement is probed through variable approaches such as SHG enhancement factor, maxima and minima SHG phase difference, and linear dichroism. In compressive strain induced wrinkled nanostructures, strain-dependent SHG quenching and enhancement is observed parallel and perpendicular, respectively, to the direction of the compressive strain vector, allowing us to determine the local strain vector accurately using a photoelastic approach. We further demonstrate that SHG is highly sensitive to band-nesting-induced transition (C-peak), which can be significantly modulated by strain. Our results show SHG as a powerful probe to folding angle and strain vector.
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Affiliation(s)
- Ahmed Raza Khan
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College), Lahore, 54700, Pakistan
| | - Boqing Liu
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Tieyu Lü
- Department of Physics and Institute of Theoretical Physics and Astrophysics, Xiamen University, Xiamen, 361005, China
| | - Linglong Zhang
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Ankur Sharma
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Yi Zhu
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Wendi Ma
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
| | - Yuerui Lu
- Research School of Electrical, Energy and Materials Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 2601, Australia
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Liu Z, Sun Y, Cao H, Xie D, Li W, Wang J, Cheetham AK. Unzipping of black phosphorus to form zigzag-phosphorene nanobelts. Nat Commun 2020; 11:3917. [PMID: 32764557 PMCID: PMC7411046 DOI: 10.1038/s41467-020-17622-6] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2020] [Accepted: 07/09/2020] [Indexed: 11/18/2022] Open
Abstract
Phosphorene, monolayer or few-layer black phosphorus, exhibits fascinating anisotropic properties and shows interesting semiconducting behavior. The synthesis of phosphorene nanosheets is still a hot topic, including the shaping of its two-dimensional structure into nanoribbons or nanobelts. Here we report electrochemical unzipping of single crystalline black phosphorus into zigzag-phosphorene nanobelts, as well as nanosheets and quantum dots, via an oxygen-driven mechanism. The experimental results agree well with our theoretical calculations. The calculation for the unzipping mechanism study suggests that interstitial oxygen-pairs are the critical intermediate species for generating zigzag-phosphorene nanobelts. Although phosphorene oxidation has been reported, lengthwise cutting is hitherto unreported. Our discovery of phosphorene cut upon oxidation represents a previously unknown mechanism for the formation of various dimensions of phosphorene nanostructures, especially zigzag-phosphorene nanobelts. It opens up a way for studying the quantum effects and electronic properties of zigzag-phosphorene nanobelts. Here, the authors demonstrate the electrochemical unzipping of single crystalline black phosphorus into zigzag-phosphorene nanobelts, nanosheets, and quantum dots, via a top-down oxygen-driven mechanism.
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Affiliation(s)
- Zhifang Liu
- Department of Chemistry, Tsinghua University, Beijing, 100084, China
| | - Yilin Sun
- Institute of Microelectronics, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Huaqiang Cao
- Department of Chemistry, Tsinghua University, Beijing, 100084, China.
| | - Dan Xie
- Institute of Microelectronics, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China.
| | - Wei Li
- Center of Rare Earth and Inorganic Functional Materials, National Institute for Advanced Materials, Nankai University, Tianjin, 300350, China
| | - Jiaou Wang
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China
| | - Anthony K Cheetham
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
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20
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Liu P, Zhou X, Xiao X, Zhou B, Zhou G. Analytical study on strain tunable electronic structure and optical transitions in armchair black phosphorene nanoribbons. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:285301. [PMID: 32150733 DOI: 10.1088/1361-648x/ab7df4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We theoretically investigate the electronic structure and optical absorption spectrum of armchair-edged black phosphorene nanoribbons (APNRs) with and without uniaxial strain based on the tight-binding Hamiltonian and Kubo formula. We analytically obtain the energy spectrum and wavefunction, and reveal the band gap scaling law as 1/(N + 1)2 for APNRs in the presence and absence of uniaxial strain, where N is the number of armchair dimer across the ribbon. We find the band gap of APNRs linearly increases (decreases) with increasing in-plane uniaxial tensile (compressive) strain ɛ x/y , but shows contrary dependence on the out-of-plane uniaxial strain ɛ z . The effective mass versus strain exhibits the same behavior to that of band gap but with nonlinear dependence. Under an incident light linearly-polarized along the ribbon, we demonstrate that the inter-band optical transitions obey the selection rule Δn = n - n' = 0, but the intra-band transitions are forbidden for both pristine and strained APNRs originating from the orthogonality between the transverse wavefunctions of the sublattices belonging to different subbands. Importantly, the transverse electric field or impurities can release the optical selection rules by breaking the wavefunction orthogonality, which results in that the optical transitions between any subbands are all possible. Our findings provide further understanding on the electronic and optical properties of APNRs, which may pave the way for designing optoelectronic devices based on phosphorene.
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Affiliation(s)
- Pu Liu
- Department of Physics and Key Laboratory for Low-Dimensional Structures and Quantum Manipulation (Ministry of Education), Hunan Normal University, Changsha 410081, People's Republic of China
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21
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Kang P, Zhang W, Michaud-Rioux V, Wang X, Yun J, Guo H. Twistronics in tensile strained bilayer black phosphorus. NANOSCALE 2020; 12:12909-12916. [PMID: 32525178 DOI: 10.1039/d0nr02179b] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In this work, by performing state-of-the-art first-principles methods combined with molecular dynamic (MD) simulation, we theoretically investigate the electronic and mechanical behaviours of small-angle twisted bilayer black phosphorus (tbBP) under uniaxial tensile deformation. Twistronics, namely the regulation of electronic properties by Moiré physics, is demonstrated as the gene - the most crucial factor dominating not only electronic behaviour but also mechanical behaviour of tensile deformed tbBP. Compared to untwisted few-layer black phosphorus (utBP) with strong electronic sensitivity to geometric deformation, the existence of Moiré patterns in tbBP leads to spatial electronic localization, giving rise to the conservation of direct band gaps and stability of phonon limited carrier mobility under tensile deformation along the armchair direction. Moreover, during the fracture failure process, the nucleation of micro-cracks is preferentially detected at the transitional pattern boundary areas in tbBP, which could be attributed to the intra-layer maldistribution of mechanical strengths in Moiré superlattices. The explorations of twistronics in tensile strained bilayer black phosphorus contribute to the better understanding of such Moiré superlattice structures and provide insights for the design of new 2D van der Waals heterostructures in flexible nano-electronic devices.
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Affiliation(s)
- Peng Kang
- Center for the Physics of Materials and Department of Physics, McGill University, Montreal, Quebec H3A 2 T8, Canada.
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22
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Brooks J, Weng G, Taylor S, Vlcek V. Stochastic many-body perturbation theory for Moiré states in twisted bilayer phosphorene. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:234001. [PMID: 31958775 DOI: 10.1088/1361-648x/ab6d8c] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We implement stochastic many-body perturbation theory for systems with 2D periodic boundary conditions. The method is used to compute quasiparticle excitations in twisted bilayer phosphorene. Excitation energies are studied using stochastic [Formula: see text] and partially self-consistent [Formula: see text] approaches. The approach is inexpensive; it is used to study twisted systems with unit cells containing >2700 atoms (>13 500 valence electrons), which corresponds to a minimum twisting angle of [Formula: see text] [Formula: see text]. Twisted bilayers exhibit band splitting, increased localization and formation of localized Moiré impurity states, as documented by band-structure unfolding. Structural changes in twisted structures lift band degeneracies. Energies of the impurity states vary with the twisting angle due to an interplay between non-local exchange and polarization effects. The mechanisms of quasiparticle energy (de)stabilization due to twisting are likely applicable to a wide range of low-dimensional Moiré superstructures.
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Affiliation(s)
- Jacob Brooks
- Department of Chemical Engineering, University of California, Santa Barbara, CA 93106-9510, United States of America
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23
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Opoku F, Govender PP. Highly Selective and Sensitive Detection of Formaldehyde by β12-Borophene/SnO2 Heterostructures: The Role of an External Electric Field and In-Plain Biaxial Strain. J Phys Chem A 2020; 124:2288-2300. [DOI: 10.1021/acs.jpca.9b10670] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Francis Opoku
- Department of Chemical Sciences (Formerly Department of Applied Chemistry), University of Johannesburg, P.O. Box 17011, Doornfontein Campus, Johannesburg 2028, South Africa
| | - Penny P. Govender
- Department of Chemical Sciences (Formerly Department of Applied Chemistry), University of Johannesburg, P.O. Box 17011, Doornfontein Campus, Johannesburg 2028, South Africa
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Qu G, Xia T, Zhou W, Zhang X, Zhang H, Hu L, Shi J, Yu XF, Jiang G. Property-Activity Relationship of Black Phosphorus at the Nano-Bio Interface: From Molecules to Organisms. Chem Rev 2020; 120:2288-2346. [PMID: 31971371 DOI: 10.1021/acs.chemrev.9b00445] [Citation(s) in RCA: 109] [Impact Index Per Article: 27.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Abstract
As a novel member of the two-dimensional nanomaterial family, mono- or few-layer black phosphorus (BP) with direct bandgap and high charge carrier mobility is promising in many applications such as microelectronic devices, photoelectronic devices, energy technologies, and catalysis agents. Due to its benign elemental composition (phosphorus), large surface area, electronic/photonic performances, and chemical/biological activities, BP has also demonstrated a great potential in biomedical applications including biosensing, photothermal/photodynamic therapies, controlled drug releases, and antibacterial uses. The nature of the BP-bio interface is comprised of dynamic contacts between nanomaterials (NMs) and biological systems, where BP and the biological system interact. The physicochemical interactions at the nano-bio interface play a critical role in the biological effects of NMs. In this review, we discuss the interface in the context of BP as a nanomaterial and its unique physicochemical properties that may affect its biological effects. Herein, we comprehensively reviewed the recent studies on the interactions between BP and biomolecules, cells, and animals and summarized various cellular responses, inflammatory/immunological effects, as well as other biological outcomes of BP depending on its own physical properties, exposure routes, and biodistribution. In addition, we also discussed the environmental behaviors and potential risks on environmental organisms of BP. Based on accumulating knowledge on the BP-bio interfaces, this review also summarizes various safer-by-design strategies to change the physicochemical properties including chemical stability and nano-bio interactions, which are critical in tuning the biological behaviors of BP. The better understanding of the biological activity of BP at BP-bio interfaces and corresponding methods to overcome the challenges would promote its future exploration in terms of bringing this new nanomaterial to practical applications.
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Affiliation(s)
- Guangbo Qu
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences , Chinese Academy of Sciences 100085 , Beijing , P.R. China.,Institute of Environment and Health , Jianghan University , Wuhan 430056 , China.,Institute of Environment and Health , Hangzhou Institute for Advanced Study, UCAS , Hangzhou 310000 , China.,University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Tian Xia
- Division of Nanomedicine, Department of Medicine , University of California Los Angeles California 90095 , United States
| | - Wenhua Zhou
- Materials Interfaces Center , Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , P.R. China
| | - Xue Zhang
- Materials Interfaces Center , Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , P.R. China
| | - Haiyan Zhang
- College of Environment , Zhejiang University of Technology , Hangzhou 310032 , China
| | - Ligang Hu
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences , Chinese Academy of Sciences 100085 , Beijing , P.R. China.,Institute of Environment and Health , Jianghan University , Wuhan 430056 , China.,Institute of Environment and Health , Hangzhou Institute for Advanced Study, UCAS , Hangzhou 310000 , China.,University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Jianbo Shi
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences , Chinese Academy of Sciences 100085 , Beijing , P.R. China.,Institute of Environment and Health , Jianghan University , Wuhan 430056 , China.,Institute of Environment and Health , Hangzhou Institute for Advanced Study, UCAS , Hangzhou 310000 , China.,University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Xue-Feng Yu
- Materials Interfaces Center , Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055 , P.R. China
| | - Guibin Jiang
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences , Chinese Academy of Sciences 100085 , Beijing , P.R. China.,Institute of Environment and Health , Jianghan University , Wuhan 430056 , China.,Institute of Environment and Health , Hangzhou Institute for Advanced Study, UCAS , Hangzhou 310000 , China.,University of Chinese Academy of Sciences , Beijing 100049 , China
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Lee Y, Lee S, Yoon JY, Cheon J, Jeong HY, Kim K. Fabrication and Imaging of Monolayer Phosphorene with Preferred Edge Configurations via Graphene-Assisted Layer-by-Layer Thinning. NANO LETTERS 2020; 20:559-566. [PMID: 31790269 DOI: 10.1021/acs.nanolett.9b04292] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Phosphorene, a monolayer of black phosphorus (BP), is an elemental two-dimensional material with interesting physical properties, such as high charge carrier mobility and exotic anisotropic in-plane properties. To fundamentally understand these various physical properties, it is critically important to conduct an atomic-scale structural investigation of phosphorene, particularly regarding various defects and preferred edge configurations. However, it has been challenging to investigate mono- and few-layer phosphorene because of technical difficulties arising in the preparation of a high-quality sample and damages induced during the characterization process. Here, we successfully fabricate high-quality monolayer phosphorene using a controlled thinning process with transmission electron microscopy and subsequently perform atomic-resolution imaging. Graphene protection suppresses the e-beam-induced damage to multilayer BP and one-side graphene protection facilitates the layer-by-layer thinning of the samples, rendering high-quality monolayer and bilayer regions. We also observe the formation of atomic-scale crystalline edges predominantly aligned along the zigzag and (101) terminations, which is originated from edge kinetics under e-beam-induced sputtering process. Our study demonstrates a new method to image and precisely manipulate the thickness and edge configurations of air-sensitive two-dimensional materials.
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Affiliation(s)
- Yangjin Lee
- Department of Physics , Yonsei University , Seoul 03722 , Korea
- Center for Nanomedicine , Institute for Basic Science (IBS) , Seoul 03722 , Korea
| | - Sol Lee
- Department of Physics , Yonsei University , Seoul 03722 , Korea
- Center for Nanomedicine , Institute for Basic Science (IBS) , Seoul 03722 , Korea
| | - Jun-Yeong Yoon
- Department of Physics , Yonsei University , Seoul 03722 , Korea
- Center for Nanomedicine , Institute for Basic Science (IBS) , Seoul 03722 , Korea
| | - Jinwoo Cheon
- Center for Nanomedicine , Institute for Basic Science (IBS) , Seoul 03722 , Korea
- Graduate Program of Nano Biomedical Engineering, Yonsei-IBS Institute , Yonsei University , Seoul 03722 , Korea
- Department of Chemistry , Yonsei University , Seoul 03722 , Korea
| | - Hu Young Jeong
- UNIST Central Research Facilities (UCRF) and School of Materials Science and Engineering , Ulsan National Institute of Science and Technology (UNIST) , Ulsan 44919 , Korea
| | - Kwanpyo Kim
- Department of Physics , Yonsei University , Seoul 03722 , Korea
- Center for Nanomedicine , Institute for Basic Science (IBS) , Seoul 03722 , Korea
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Shah NA, Li LL, Mosallanejad V, Peeters FM, Guo GP. Transport characteristics of multi-terminal pristine and defective phosphorene systems. NANOTECHNOLOGY 2019; 30:455705. [PMID: 31390597 DOI: 10.1088/1361-6528/ab3961] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Atomic vacancies and nanopores act as local scattering centers and modify the transport properties of charge carriers in phosphorene nanoribbons (PNRs). We investigate the influence of such atomic defects on the electronic transport of multi-terminal PNR. We use the non-equilibrium Green's function approach within the tight-binding framework to calculate the transmission coefficient and the conductance. Terminals induce band mixing resulting in oscillations in the conductance. In the presence of atomic vacancies and nanopores the conductance between non-axial terminals exhibit constructive scattering, which is in contrast to mono-axial two-terminal systems where the conductance exhibits destructive scattering. This can be understood from the spatial local density of states of the transport modes in the system. Our results provide fundamental insights into the electronic transport in PNR-based multi-terminal systems and into the ability of atomic defects and nanopores through tuning the transport properties.
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Affiliation(s)
- Nayyar Abbas Shah
- CAS Key Laboratory of Quantum Information, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Chinese Academy of Sciences, Hefei 230026, People's Republic of China
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27
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Qi L, Gao W, Jiang Q. Strain engineering of the electronic and transport properties of monolayer tellurenyne. Phys Chem Chem Phys 2019; 21:23119-23128. [PMID: 31608349 DOI: 10.1039/c9cp03547h] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional (2D) materials exhibiting quality electronic properties such as suitable band gap, giant Rashba effect and high carrier mobility are essential for promising applications in electronics and spintronics. Strain engineering has been recognized as an effective strategy to engineer the atomic and electronic properties of 2D materials. Herein, based on density functional theory, we demonstrate that the electronic properties of tellurenyne can be tuned well by using uniaxial strain. We find that tellurenyne retains the unique noncovalent bond structure and exhibits good stability under the uniaxial strain. Meanwhile, the band gap of tellurenyne can be tuned to a large scale (0.33-1.18 eV and 0.73-1.27 eV under the uniaxial strain along and perpendicular to the chain direction, respectively). Under 10% tension strain along the chain direction, the Rashba constant reaches 2.96 eV Å, belonging to giant Rashba systems. More importantly, the hole mobility of tellurenyne along the chain direction reaches 1.1 × 105 cm2 V-1 s-1 under 10% tension strain along the chain direction, which is one order of magnitude larger than that of phosphorene. Therefore, these remarkable electronic properties of tellurenyne engineered by using strain indicate its potential applications in electronics and spintronics.
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Affiliation(s)
- Liujian Qi
- Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering, Jilin University, 130022, Changchun, China.
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28
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Khoa DQ, Phong TC, Lam VT, Hoi BD. Combined temperature- and magnetic field-induced optical responses of phosphorene. Chem Phys 2019. [DOI: 10.1016/j.chemphys.2019.05.012] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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29
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Guo R, Su J, Lin Z, Zhang J, Qin Y, Zhang J, Chang J, Hao Y. Understanding the Potential of 2D Ga
2
O
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in Flexible Optoelectronic Devices: Impact of Uniaxial Strain and Electric Field. ADVANCED THEORY AND SIMULATIONS 2019. [DOI: 10.1002/adts.201900106] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Rui Guo
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyShaanxi Joint Key Laboratory of GrapheneSchool of Microelectronics, Xidian University 2 South Taibai Road Xi'an 710071 China
| | - Jie Su
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyShaanxi Joint Key Laboratory of GrapheneSchool of Microelectronics, Xidian University 2 South Taibai Road Xi'an 710071 China
| | - Zhenhua Lin
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyShaanxi Joint Key Laboratory of GrapheneSchool of Microelectronics, Xidian University 2 South Taibai Road Xi'an 710071 China
| | - Junjing Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyShaanxi Joint Key Laboratory of GrapheneSchool of Microelectronics, Xidian University 2 South Taibai Road Xi'an 710071 China
| | - Yu Qin
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyShaanxi Joint Key Laboratory of GrapheneSchool of Microelectronics, Xidian University 2 South Taibai Road Xi'an 710071 China
| | - Jincheng Zhang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyShaanxi Joint Key Laboratory of GrapheneSchool of Microelectronics, Xidian University 2 South Taibai Road Xi'an 710071 China
| | - Jingjing Chang
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyShaanxi Joint Key Laboratory of GrapheneSchool of Microelectronics, Xidian University 2 South Taibai Road Xi'an 710071 China
| | - Yue Hao
- State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyShaanxi Joint Key Laboratory of GrapheneSchool of Microelectronics, Xidian University 2 South Taibai Road Xi'an 710071 China
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30
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Li JH, Guo YD, Zeng HL, Mou XY, Yan XH. Edge-modulated dual spin-filter effect in zigzag-shaped buckling Ag 2S nanoribbons. Phys Chem Chem Phys 2019; 21:15623-15629. [PMID: 31268445 DOI: 10.1039/c9cp02521a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Unlike MoS2, single-layered Ag2S nanoribbons (Ag2SNRs) exhibit a nonmetal-shrouded and a zigzag-shaped buckling structure and possess two distinct edges, S- or Ag-terminated ones. By performing first principle calculations, the spin-dependent electron transport of Ag2SNRs in a ferromagnetic state has been investigated. It is found that the SS- and AgAg-terminated Ag2SNRs exhibit semi-metallic characteristics, but with opposite spin-polarized directions. And AgS-terminated ones show metallic characteristics, but with completely spin-unpolarized transmission. That is to say, all three states, i.e., spin up polarized, spin down polarized and spin unpolarized ones, could be achieved by modulating the edge geometry. Further analysis shows that, the spatial separation on edges of the energy states with different spins around EF is responsible for the switch in the three states. The system could operate as a dual spin-filter, and the direction of the spin polarization can be switched by the edge morphology. Furthermore, calculations show that such a phenomenon is robust to the width of the ribbon and strain, showing great application potential.
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Affiliation(s)
- Jian-Hua Li
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
| | - Yan-Dong Guo
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China. and College of Natural Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China and Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, China and New Energy Technology Engineering Laboratory of Jiangsu Province, Nanjing, 210023, Jiangsu, China
| | - Hong-Li Zeng
- College of Natural Science, Nanjing University of Posts and Telecommunications, Nanjing 210046, China and Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, China
| | - Xin-Yi Mou
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
| | - Xiao-Hong Yan
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China. and Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing 210023, China and College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China and School of Material Science and Engineering, Jiangsu University, Zhenjiang, 212013, China
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31
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Khang PD, Davoudiniya M, Phuong LTT, Phong TC, Yarmohammadi M. Optical interband transitions in strained phosphorene. Phys Chem Chem Phys 2019; 21:15133-15141. [PMID: 31243415 DOI: 10.1039/c9cp01833f] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In this paper, we have concentrated on the orbital and hybridization effects induced by applied triaxial strain on the interband optical conductivity (IOC) of phosphorene using a two-band Hamiltonian model, linear response theory and the Kubo formula. In particular, we study the dependence of the electronic band structure and of the IOC of a phosphorene single layer on the modulus and direction of the applied triaxial strain. The triaxial strain is included in a model through the introduction of strain-dependent hopping parameters using the Harrison rule. Among the various configurations for applying the triaxial strain, considerable findings are presented here in three classes: (i) uniform, (ii) in-plane uniform and (iii) non-uniform triaxial strain. The main consequence of applying triaxial strain is that of increasing and decreasing the band gap depending on the considered class of study, resulting in a blue shift and red shift of the interband optical transitions, respectively. Our results show that a pure blue shift independent of the strain modulus as well as strain sign (tensile or compressive) emerges when applying non-uniform triaxial strain. The overall feature of our outcomes is tailoring the edge-dependent optical responses of phosphorene in the presence of triaxial strain, which provides the required conditions of tuning the optical properties of phosphorene for future experimental research.
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Affiliation(s)
- Pham Dinh Khang
- Laboratory of Applied Physics, Advanced Institute of Materials Science, Ton Duc Thang University, Ho Chi Minh City, Vietnam and Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Vietnam.
| | - Masoumeh Davoudiniya
- Department of Energy Engineering and Physics, Amirkabir University of Technology, 14588 Tehran, Iran.
| | - Le Thi Thu Phuong
- Department of Physics and Center for Theoretical and Computational Physics, University of Education, Hue University, Hue, Vietnam
| | - Tran Cong Phong
- The Vietnam National Institute of Educational Sciences, Hanoi, Vietnam.
| | - Mohsen Yarmohammadi
- Lehrstuhl für Theoretische Physik I, Technische Universität Dortmund, Otto-Hahn Straße 4, 44221 Dortmund, Germany.
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32
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Hu Z, Ding Y, Hu X, Zhou W, Yu X, Zhang S. Recent progress in 2D group IV-IV monochalcogenides: synthesis, properties and applications. NANOTECHNOLOGY 2019; 30:252001. [PMID: 30776787 DOI: 10.1088/1361-6528/ab07d9] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Coordination-related, 2D structural phase transitions are a fascinating facet of 2D materials with structural degeneracy. Phosphorene and its new phases, exhibiting unique electronic properties, have received considerable attention. The 2D group IV-IV monochalcogenides (i.e. GeS, GeSe, SnS and SnSe) like black phosphorous possess puckered layered orthorhombic structure. The 2D group IV-IV monochalcogenides with advantages of earth-abundance, less toxicity, environmental compatibility and chemical stability, can be widely used in optoelectronics, piezoelectrics, photodetectors, sensors, Li-batteries and thermoelectrics. In this review, we summarized recent research progress in theory and experiment, which studies the fundamental properties, applications and fabrication of 2D group IV-IV monochalcogenides and their new phases, and brings new perspectives and challenges for the future of this emerging field.
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Affiliation(s)
- Ziyu Hu
- College of Science, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
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Hien ND, Davoudiniya M, Mirabbaszadeh K, Phuong LT, Yarmohammadi M. Strain-induced electronic phase transition in phosphorene: A Green’s function study. Chem Phys 2019. [DOI: 10.1016/j.chemphys.2019.03.013] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022]
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34
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Wei Z, Dubceac C, Petrukhina MA, Dikarev EV. From a volatile molecular precursor to twin-free single crystals of bismuth. Chem Commun (Camb) 2019; 55:5717-5719. [PMID: 31037279 DOI: 10.1039/c9cc02820j] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A highly volatile molecular precursor, dibismuth(ii) (tetra)trifluoroacetate, was successfully utilized for the gas phase growth of twin-free single crystals of bismuth. This allowed high-quality single-crystal X-ray diffraction data to be collected, providing accurate structural parameters for elemental bismuth under ambient conditions.
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Affiliation(s)
- Zheng Wei
- Department of Chemistry University at Albany, State University of New York, 1400 Washington Ave., Albany, NY 12222, USA.
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35
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Huang JH, Wang XF, Liu YS, Zhou LP. Electronic Properties of Armchair Black Phosphorene Nanoribbons Edge-Modified by Transition Elements V, Cr, and Mn. NANOSCALE RESEARCH LETTERS 2019; 14:145. [PMID: 31030371 PMCID: PMC6486942 DOI: 10.1186/s11671-019-2971-5] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/01/2019] [Accepted: 04/03/2019] [Indexed: 06/09/2023]
Abstract
The structural, electrical, and magnetic properties of armchair black phosphorene nanoribbons (APNRs) edge-functionalized by transitional metal (TM) elements V, Cr, and Mn were studied by the density functional theory combined with the non-equilibrium Green's function. Spin-polarized edge states introduce great varieties to the electronic structures of TM-APNRs. For APNRs with Mn-stitched edge, their band structures exhibit half-semiconductor electrical properties in the ferromagnetic state. A transverse electric field can then make the Mn-APNRs metallic by shifting the conduction bands of edge states via the Stark effect. The Mn/Cr-APNR heterojunction may be used to fabricate spin p-n diode where strong rectification acts only on one spin.
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Affiliation(s)
- Jiong-Hua Huang
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, 1 Shizi Street, Suzhou, 215006 China
| | - Xue-Feng Wang
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, 1 Shizi Street, Suzhou, 215006 China
- Key Laboratory of Terahertz Solid-State Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
| | - Yu-Shen Liu
- College of Physics and Electronic Engineering, Changshu Institute of Technology, Changshu, 215500 China
| | - Li-Ping Zhou
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, 1 Shizi Street, Suzhou, 215006 China
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36
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Direct Observation of Raman Spectra in Black Phosphorus under Uniaxial Strain Conditions. NANOMATERIALS 2019; 9:nano9040566. [PMID: 30965572 PMCID: PMC6523506 DOI: 10.3390/nano9040566] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/22/2019] [Revised: 03/12/2019] [Accepted: 03/25/2019] [Indexed: 11/16/2022]
Abstract
In this paper, we systematically studied the Raman vibration of black phosphorus (BP) transferred onto a germanium (Ge)-coated polydimethylsiloxane (PDMS) substrate, which generates a much higher contrast in BP. This engineered flexible substrate allowed us to directly observe a much thinner BP layer on the flexible substrate at the desired location. Therefore, it enabled us to perform Raman spectroscopy immediately after exfoliation. The Raman spectra obtained from several BP layers with different thicknesses revealed that the clear peak shifting rates for the Ag¹, B2g, and Ag² modes were 0.15, 0.11, and 0.11 cm-1/nm, respectively. Using this value to identify a 2⁻3-layered BP, a study on the strain⁻Raman spectrum relationship was conducted, with a maximum uniaxial strain of 0.89%. The peak shifting of Ag¹, B2g, and Ag² caused by this uniaxial strain were measured to be 0.86, 0.63, and 0.21 cm-1/Δε, respectively.
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37
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Dong MM, Wang ZQ, Zhang GP, Wang CK, Fu XX. Surface engineering of phosphorene nanoribbons by transition metal heteroatoms for spintronics. Phys Chem Chem Phys 2019; 21:4879-4887. [PMID: 30778495 DOI: 10.1039/c9cp00072k] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Modulating the electronic and magnetic properties of phosphorene is important for fabricating multi-functional electronic and spintronic devices. Employing density functional theory combined with the non-equilibrium Green's function, we systematically investigate the electronic, magnetic and transport properties of hydrogenated armchair phosphorene nanoribbons chemically modified by 3d transition metal atoms (Sc, Ti, V, Cr, Mn, Fe, Co and Ni). With chemical adsorption of transition metal atoms, the phosphorene nanoribbons exhibit excellent spin-polarized transport properties. A giant magnetoresistance effect is found with Ti, Fe and Mn adsorption, in which ratios higher than 102 for the Ti and Mn cases, and 105 for the Fe case, are exhibited. Moreover, in the bias range of (-0.2 V, 0.2 V), the Ti, V, Mn and Fe-adsorbed nanoribbons with parallel spin configurations demonstrate a remarkable bias-independent spin filtering efficiency at about 100%, while the Fe and Mn-adsorbed nanoribbons with antiparallel spin configuration show a dual spin filtering effect. The spin-polarized electronic transport properties are closely related to the band structures. Remarkable spin-polarization of the current occurs when the dispersed and flat bands near the Fermi level originate from different spin orientations. The magnetic moments of transition metal adatoms on nanoribbons are reduced by 0.2-2 μB relative to the isolated atoms due to electron rearrangement and charge transfer, which results in various degrees of spin polarization. These results provide a fundamental understanding of the electronic, magnetic and transport properties of transition metal modified hydrogenated armchair phosphorene nanoribbons, and suggest a referential approach to manufacture spintronic devices based on phosphorene.
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Affiliation(s)
- Mi-Mi Dong
- Shandong Province Key Laboratory of Medical Physics and Image Processing Technology, School of Physics and Electronics, Shandong Normal University, Jinan 250358, China.
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38
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Chaudhury A, Majumder S, Ray SJ. Proximity-Induced Colossal Conductivity Modulation in Phosphorene. PHYSICAL REVIEW APPLIED 2019; 11:024056. [DOI: 10.1103/physrevapplied.11.024056] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/19/2023]
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39
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Wang Y, Song X, Song N, Zhang T, Yang X, Jiang W, Wang J. Electronic and magnetic properties of a black phosphorene/Tl 2S heterostructure with transition metal atom intercalation: a first-principles study. RSC Adv 2019; 9:19418-19428. [PMID: 35519413 PMCID: PMC9065330 DOI: 10.1039/c9ra03547h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/13/2019] [Accepted: 06/07/2019] [Indexed: 12/02/2022] Open
Abstract
Using density functional theory calculations, the structural, electronic and magnetic properties of a black phosphorene/Tl2S heterostructure (BP/Tl2S) and the BP/Tl2S intercalated with transition metal atoms (TMs) have been detailed investigated. It is demonstrated that the BP/Tl2S is a type-I van der Waals (vdW) heterostructure with an indirect band gap of approximately 0.79 eV. The BP/Tl2S experiences a transition from type-I to type-II when various strains are applied. In addition, the BP/Tl2S intercalated with TMs (TM-BP/Tl2S) exhibits various kinds of meaningful electronic and magnetic properties. Several TM-BP/Tl2S systems are still non-magnetic ground states and six TM-BP/Tl2S (Ti-, V-, Cr-, Mn-, Fe-, Tc-) systems are ferromagnetic. Interestingly, three TM-BP/Tl2S (V-, Cr-, Mn-) systems display half-metallic character. The Fe-BP/Tl2S and Tc-BP/Tl2S are dilute magnetic semiconductors (DMSs), while TM-BP/Tl2S (Mo-, Pd-, Ni-) systems are semiconductors. The other TM-BP/Tl2S systems become metals. These results may open a new avenue for application of the BP/Tl2S in future spintronic and electronic devices. Using density functional theory calculations, the structural, electronic and magnetic properties of a black phosphorene/Tl2S heterostructure (BP/Tl2S) and the BP/Tl2S intercalated with transition metal atoms (TMs) have been detailed investigated.![]()
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Affiliation(s)
- Yusheng Wang
- College of Physics and Electronics
- North China University of Water Resources and Electric Power
- Zhengzhou
- China
- International Joint Research Laboratory for Quantum Functional Materials of Henan
| | - Xiaoyan Song
- College of Physics and Electronics
- North China University of Water Resources and Electric Power
- Zhengzhou
- China
| | - Nahong Song
- College of Computer and Information Engineering
- Henan University of Economics and Law
- Zhengzhou
- China
- International Joint Research Laboratory for Quantum Functional Materials of Henan
| | - Tianjie Zhang
- College of Physics and Electronics
- North China University of Water Resources and Electric Power
- Zhengzhou
- China
| | - Xiaohui Yang
- College of Physics and Electronics
- North China University of Water Resources and Electric Power
- Zhengzhou
- China
| | - Weifen Jiang
- College of Physics and Electronics
- North China University of Water Resources and Electric Power
- Zhengzhou
- China
| | - Jianjun Wang
- College of Science
- Zhongyuan University of Technology
- Zhengzhou 450007
- China
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Bafekry A, Ghergherehchi M, Farjami Shayesteh S. Tuning the electronic and magnetic properties of antimonene nanosheets via point defects and external fields: first-principles calculations. Phys Chem Chem Phys 2019; 21:10552-10566. [DOI: 10.1039/c9cp01378d] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Defects are inevitably present in materials, and their existence in a material strongly affects its fundamental physical properties.
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Affiliation(s)
- Asadollah Bafekry
- Department of Physics
- University of Guilan
- Rasht
- Iran
- Department of Physics
| | - Mitra Ghergherehchi
- College of Electronic and Electrical Engineering
- Sungkyun kwan University
- Suwon
- Korea
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41
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Zhu J, Gandi AN, Gu M. B‐Doping‐Enhanced Stability of Phosphorene/Graphene Heterostructures. ADVANCED THEORY AND SIMULATIONS 2018. [DOI: 10.1002/adts.201800176] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Jiajie Zhu
- College of Materials Science and EngineeringShenzhen University,Nanhai Ave 3688 ShenZhen Guangdong 518060 P. R. China
| | - Appala Naidu Gandi
- Department of Metallurgical and Materials EngineeringIndian Institute of Technology JodhpurJodhpur 342037 India
| | - Mu Gu
- School of Physics Science and EngineeringTongji UniversitySiping Rd 1239 Shanghai 200092 P. R. China
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Ma Y, Ajayan PM, Yang S, Gong Y. Recent Advances in Synthesis and Applications of 2D Junctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:e1801606. [PMID: 30073751 DOI: 10.1002/smll.201801606] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2018] [Revised: 06/15/2018] [Indexed: 06/08/2023]
Abstract
Recent progress in the methods of integration of 2D materials is reviewed. Integrated 2D circuits are one of the most promising candidates for advanced electronics and flexible devices. Specifically, methods such as mechanical transfer, chemical vapor deposition growth, high temperature conversion, phase engineering, surface doping, electrostatic doping, and so on to fabricate 2D heterostructures are discussed in detail. Applications of these integrated 2D heterostructures in p-n junctions, ohmic contact, high-performance transistors, and phototransistors are also highlighted. Finally, challenges and opportunities of methods to integrate 2D materials are proposed.
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Affiliation(s)
- Yang Ma
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Pulickel M Ajayan
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Shubin Yang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Yongji Gong
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
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Zhou X, Hu X, Jin B, Yu J, Liu K, Li H, Zhai T. Highly Anisotropic GeSe Nanosheets for Phototransistors with Ultrahigh Photoresponsivity. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2018; 5:1800478. [PMID: 30128256 PMCID: PMC6096999 DOI: 10.1002/advs.201800478] [Citation(s) in RCA: 69] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2018] [Revised: 05/11/2018] [Indexed: 05/19/2023]
Abstract
2D GeSe possesses black phosphorous-analog-layered structure and shows excellent environmental stability, as well as highly anisotropic in-plane properties. Additionally, its high absorption efficiency in the visible range and high charge carrier mobility render it promising for applications in optoelectronics. However, most reported GeSe-based photodetectors show frustrating performance especially in photoresponsivity. Herein, a 2D GeSe-based phototransistor with an ultrahigh photoresponsivity is demonstrated. Its optimized photoresponsivity can be up to ≈1.6 × 105 A W-1. This high responsivity can be attributed to the highly efficient light absorption and the enhanced photoconductive gain due to the existence of trap states. The exfoliated GeSe nanosheet is confirmed to be along the [001] (armchair direction) and [010] (zigzag direction) using transmission electron microscopy and anisotropic Raman characterizations. The angle-dependent electric and photoresponsive performance is systematically explored. Notably, the GeSe-based phototransistor shows strong polarization-dependent photoresponse with a peak/valley ratio of 1.3. Furthermore, the charge carrier mobility along the armchair direction is measured to be 1.85 times larger than that along the zigzag direction.
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Affiliation(s)
- Xing Zhou
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Xiaozong Hu
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Bao Jin
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Jing Yu
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Kailang Liu
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Huiqiao Li
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Material Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and Technology (HUST)Wuhan430074P. R. China
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44
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Tang S. Extracting the Energy Sensitivity of Charge Carrier Transport and Scattering. Sci Rep 2018; 8:10597. [PMID: 30006531 PMCID: PMC6045660 DOI: 10.1038/s41598-018-28288-y] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2017] [Accepted: 06/15/2018] [Indexed: 11/09/2022] Open
Abstract
It is a challenge to extract the energy sensitivity of charge carriers’ transport and scattering from experimental data, although a theoretical estimation in which the existing scattering mechanism(s) are preliminarily assumed can be easily done. To tackle this problem, we have developed a method to experimentally determine the energy sensitivities, which can then serve as an important statistical measurement to further understand the collective behaviors of multi-carrier transport systems. This method is validated using a graphene system at different temperatures. Further, we demonstrate the application of this method to other two-dimensional (2D) materials as a guide for future experimental work on the optimization of materials performance for electronic components, Peltier coolers, thermoelectricity generators, thermocouples, thermopiles, electrical converters and other conductivity and/or Seebeck-effect-related sensors.
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Affiliation(s)
- Shuang Tang
- College of Engineering, State University of New York, Polytechnic Institute, Albany, New York, 12203, USA.
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45
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Jia C, Cao L, Zhou X, Zhou B, Zhou G. Low-bias negative differential resistance in junction of a benzene between zigzag-edged phosphorene nanoribbons. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:265301. [PMID: 29762129 DOI: 10.1088/1361-648x/aac4ff] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We study the electron transport properties through the junction of a benzene molecule in conjunction with two monolayer zigzag-edged phosphorene nanoribbon (ZPNR) electrodes by applying the nonequilibrium Green's functions in combination with the density functional theory. We find that the molecular junction with two phosphorus-carbon bonds exhibits an interesting low-bias negative differential resistance effect with a peak-to-valley ratio of 29, which originates from the edge states in ZPNR due to the anisotropic band structure of phosphorene. Importantly, the performance of the junction can be tuned via the molecule-ZPNR interface bonding. The findings may be useful in sensitive-device applications. Furthermore, the physical mechanisms are revealed and discussed in terms of the electronic transmission spectrum, the evolution of the frontier molecular orbitals, the local device density of states around the Fermi level, and the projected density of states.
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Affiliation(s)
- Chunxia Jia
- Department of Physics, Key Laboratory for Low-Dimensional Structures and Quantum Manipulation (Ministry of Education), and Synergetic Innovation Center for Quantum Effects and Applications of Hunan, Hunan Normal University, Changsha 410081, People's Republic of China. Institute of Modern Physics and Department of Physics, Hunan University of Science and Technology, Xiangtan 411201, People's Republic of China
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Carmel S, Pon A, Meenakshisundaram N, Ramesh R, Bhattacharyya A. Bandgap scaling and negative differential resistance behavior of zigzag phosphorene antidot nanoribbons (ZPANRs). Phys Chem Chem Phys 2018; 20:14855-14863. [PMID: 29781502 DOI: 10.1039/c8cp01435c] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
This work examines the prospect of phosphorene antidot nanoribbons (PANRs) using the density functional based tight binding (DFTB) method. Horizontally perforated PANRs with both armchair (A) and zigzag (Z) configurations were considered for electrical simulations. Our simulation results found that the APANRs cannot be scaled down with nanoribbon width, whereas ZPANRs can be scaled easily. Bandgap scaling in terms of ribbon width, length and antidot number was thoroughly analyzed for ZPANRs. In the end, a two-terminal device was constructed and transmission analysis was performed using the non-equilibrium Green's function (NEGF) methodology. A negative differential resistance (NDR) region appeared in the current-voltage characteristics of the ZPANRs, which paved a pathway for nano-device application.
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Affiliation(s)
- Santhia Carmel
- Device Modeling Lab, SASTRA Deemed University, Thirumalaisamudram, Thanjavur, 613401, Tamil Nadu, India.
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Agarwal A, Vitiello MS, Viti L, Cupolillo A, Politano A. Plasmonics with two-dimensional semiconductors: from basic research to technological applications. NANOSCALE 2018; 10:8938-8946. [PMID: 29741546 DOI: 10.1039/c8nr01395k] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Herein, we explore the main features and the prospect of plasmonics with two-dimensional semiconductors. Plasmonic modes in each class of van der Waals semiconductors have their own peculiarities, along with potential technological capabilities. Plasmons of transition-metal dichalcogenides share features typical of graphene, due to their honeycomb structure, but with damping processes dominated by intraband rather than interband transitions, unlike graphene. Spin-orbit coupling strongly affects the plasmonic spectrum of buckled honeycomb lattices (silicene and germanene), while the anisotropic lattice of phosphorene determines different propagation of plasmons along the armchair and zigzag directions. Black phosphorus is also a suitable material for ultrafast plasmonics, for which the active plasmonic response can be initiated by photoexcitation with femtosecond pulses. We also review existing applications of plasmonics with two-dimensional materials in the fields of thermoplasmonics, biosensing, and plasma-wave Terahertz detection. Finally, we consider the capabilities of van der Waals heterostructures for innovative low-loss plasmonic devices.
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Affiliation(s)
- Amit Agarwal
- Department of Physics, Indian Institute of Technology Kanpur, 208016, Kanpur, India.
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Le MQ. Reactive molecular dynamics simulations of the mechanical properties of various phosphorene allotropes. NANOTECHNOLOGY 2018; 29:195701. [PMID: 29372890 DOI: 10.1088/1361-6528/aaaacf] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Although various phosphorene allotropes have been theoretically predicted to be stable at 0 K, the mechanical properties and fracture mechanism at room temperature remain unclear for many of them. We investigate through reactive molecular dynamics simulations at room temperature the mechanical properties of phosphorene allotropes including: five sheets with hexagonal structures (β-, γ-, δ-, θ-, and α-phosphorene), one sheet with 4-8 membered rings (4-8-P), and two sheets with 5-7 membered rings. High, moderate and slight anisotropies in their mechanical properties are observed, depending on their crystal structures. Their Young's moduli and tensile strength are approximately in the range from 7.3% through 25%, and from 8.6% through 22% of those of graphene, respectively. At the early stage of fracture, eye-shaped cracks are formed by local bond breaking and perpendicular to the tensile direction in hexagonal and 4-8-P sheets. Complete fractures take place with straight cracks in these hexagonal sheets under tension along the zigzag direction and under tension along the square edge direction in the 4-8-P sheet. Crack meandering and branching are observed during the tension of α-, β-, and γ-phosphorene along the armchair direction; and along the square diagonal direction in the 4-8-P sheet. Under uniaxial tension of two phosphorene sheets with 5-7 atom rings, 12 and 10 membered rings are formed by merging two neighbor heptagons, and a heptagon and its neighbor pentagon, respectively. These 12 and 10 membered rings coalesce subsequently, causing the failure of these two sheets. The results are of great importance in the design of these novel phosphorene allotropes.
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Affiliation(s)
- Minh-Quy Le
- Department of Mechanics of Materials and Structures, School of Mechanical Engineering, Hanoi University of Science and Technology, No. 1, Dai Co Viet Road, Hanoi, Vietnam
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Liu C, Wan W, Ma J, Guo W, Yao Y. Robust ferroelectricity in two-dimensional SbN and BiP. NANOSCALE 2018; 10:7984-7990. [PMID: 29687796 DOI: 10.1039/c7nr09006d] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Based on first-principles calculations, we discover two new two-dimensional (2D) ferroelectric materials SbN and BiP. Both of them are stable in a phosphorene-like structure and maintain their ferroelectricity above room temperature. Till date, SbN has the largest in-plane spontaneous polarization of about 7.81 × 10-10 C m-1 ever found in 2D ferroelectric materials, and it can retain its ferroelectricity until melting at about 1700 K. The spontaneous polarizations and switching barriers can easily be tuned by strains. Additionally, the ferroelectricity can still be maintained in their multilayers. These advantages make SbN and BiP promising candidate materials for future integrated ferroelectric devices.
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Affiliation(s)
- Chang Liu
- Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
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Liao X, Xiao H, Lu X, Chen Y, Shi X, Chen X. Closed-edged bilayer phosphorene nanoribbons producing from collapsing armchair phosphorene nanotubes. NANOTECHNOLOGY 2018; 29:085707. [PMID: 29300176 DOI: 10.1088/1361-6528/aaa52d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A new phosphorous allotrope, closed-edged bilayer phosphorene nanoribbon, is proposed via radially deforming armchair phosphorene nanotubes. Using molecular dynamics simulations, the transformation pathway from round PNTs falls into two types of collapsed structures: arc-like and sigmoidal bilayer nanoribbons, dependent on the number of phosphorene unit cells. The fabricated nanoribbions are energetically more stable than their parent nanotubes. It is also found via ab initio calculations that the band structure along tube axis substantially changes with the structural transformation. The direct-to-indirect transition of band gap is highlighted when collapsing into the arc-like nanoribbons but not the sigmoidal ones. Furthermore, the band gaps of these two types of nanoribbons show significant size-dependence of the nanoribbon width, indicative of wider tunability of their electrical properties.
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Affiliation(s)
- Xiangbiao Liao
- Department of Earth and Environmental Engineering, Columbia University, New York, NY10027, United States of America
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