Evolution of graphene growth on Ni and Cu by carbon isotope labeling

Remarkably Corrosion Resistant Graphene Coating on Steel Enabled Through Metallurgical Tailoring

Graphene coatings developed by chemical vapor deposition (CVD) that possess extraordinary/unique characteristics as barrier against aggressive environment can improve the corrosion resistance of Ni and Cu by up to two orders of magnitude. However, because of some compelling technical reasons, it has thus far been a nontrivial challenge to develop graphene coatings on the most commonly used engineering alloy, mild steel (MS). To circumvent the challenge simply by first electroplating MS with a Ni layer is attempted, and then developing CVD graphene over the Ni layer. However, this approach proved too simplistic and does not work. This necessitated an innovative surface modification of MS (based on basic metallurgical principles) that enabled successful CVD of graphene coating on MS. The graphene coating thus developed is demonstrated to improve the corrosion resistance of mild steel by two orders of magnitude in an aggressive chloride solution, through electrochemical testing. This improvement was not only sustained for the entire test duration of >1000 h; but there is a clear trend for the resistance to be possibly everlasting. The optimized surface modification that enabled development of CVD graphene coating on mild steel is generic in nature, and it should enable graphene coating on other alloy systems, which would otherwise not be possible.

Graphene-Coated Ni-Cu Alloys for Durable Degradation Resistance of Bi-Polar Plates for Proton Exchange Membrane Fuel Cells: Remarkable Role of Alloy Composition

Bipolar plates, a critical component of proton exchange membrane fuel cell (PEMFC), are constructed out of alloys of Ti, Pt, Cr, or graphitic materials that have limitations. Electrical conductivity, cost, and corrosion resistance are among the critical considerations for bi-polar plate material. Graphene, which possesses impressive conductivity and toughness, is an attractive option as coating on metallic substrates of PEMFC bipolar plates. This study investigates corrosion resistance and its durability due to graphene developed by chemical vapor deposition on a pure Ni-Cu alloy and a commercial Ni-Cu alloy in 0.5 m H2SO4 environment, with a view to exploring use of graphene coated Ni-Cu alloys for the construction of PEMFC bipolar plates. The graphene coating on the pure alloy shows remarkably superior corrosion resistance than the commercial alloy that is attributed to the former's ability to develop considerably defect-free graphene.

Graphene-skinned alumina fiber fabricated through metalloid-catalytic graphene CVD growth on nonmetallic substrate and its mass production

Graphene growth on widely used dielectrics/insulators via chemical vapor deposition (CVD) is a strategy toward transfer-free applications of CVD graphene for the realization of advanced composite materials. Here, we develop graphene-skinned alumina fibers/fabrics (GAFs/GAFFs) through graphene CVD growth on commercial alumina fibers/fabrics (AFs/AFFs). We reveal a vapor-surface-solid growth model on a non-metallic substrate, which is distinct from the well-established vapor-solid model on conventional non-catalytic non-metallic substrates, but bears a closer resemblance to that observed on catalytic metallic substrates. The metalloid-catalytic growth of graphene on AFs/AFFs resulted in reduced growth temperature (~200 °C lower) and accelerated growth rate (~3.4 times faster) compared to that obtained on a representative non-metallic counterpart, quartz fiber. The fabricated GAFF features a wide-range tunable electrical conductivity (1-15000 Ω sq-1), high tensile strength (>1.5 GPa), lightweight, flexibility, and a hierarchical macrostructure. These attributes are inherited from both graphene and AFF, making GAFF promising for various applications including electrical heating and electromagnetic interference shielding. Beyond laboratory level preparation, the stable mass production of large-scale GAFF has been achieved through a home-made roll-to-roll system with capacity of 468-93600 m2/year depending on product specifications, providing foundations for the subsequent industrialization of this material, enabling its widespread adoption in various industries.

Site-Selective Synthesis of Bilayer Graphene on Cu Substrates Using Titanium as a Carbon Diffusion Barrier

Chemical vapor deposition (CVD) is a widely used method for graphene synthesis, but it struggles to produce large-area uniform bilayer graphene (BLG). This study introduces a novel approach to meet the demands of large-scale integrated circuit applications, challenging the conventional reliance on uniform BLG over extensive areas. We developed a unique method involving the direct growth of bilayer graphene arrays (BLGA) on Cu foil substrates using patterned titanium (Ti) as a diffusion barrier. The use of the Ti layer can effectively control carbon atom diffusion through the Cu foil without altering the growth conditions or compromising the graphene quality, thereby showcasing its versatility. The approach allows for targeted BLG growth and achieved a yield of 100% for a 10 × 10 BLG units array. Then a 10 × 10 BLG memristor array was fabricated, and a yield of 96% was achieved. The performances of these devices show good uniformity, evidenced by the set voltages concentrated around 4 V, and a high resistance state (HRS) to low resistance state (LRS) ratio predominantly around 107, reflecting the spatial uniformity of the prepared BLGA. This study provides insight into the BLG growth mechanism and opens new possibilities for BLG-based electronics.

Real-Time Observation for MoS2 Growth Kinetics and Mechanism Promoted by the Na Droplet

While the molten salt-catalyzed chemical vapor deposition (CVD) technique is recognized for its effectiveness in producing large-area transition metal chalcogenides, understanding their growth mechanisms involving alkali metals remains a challenge. Here, we investigate the kinetics and mechanism of sodium-catalyzed molybdenum disulfide (MoS2) growth and etching through image analysis conducted using an integrated CVD microscope. Sodium droplets, agglomerated via the thermal decomposition of the sodium cholate dispersant, catalyze the precipitation of supersaturated MoS2 laminates and induce growth despite fragmentation during this process. Triangular MoS2 crystals display a distinct self-exhausting exponential behavior and slow growth of thermodynamically favorable crystallographic faces, exhibiting a sulfur-dominant pressure. The growth and etching processes are facilitated by the scooting of sodium droplets along grain edges, displaying comparable rates. Leveraging these kinetics makes it possible to engineer atypical MoS2 shapes. This combined microscope not only enhances the understanding of growth mechanisms but also contributes to the facile development of next-generation nanomaterials.

On the nature of Cu-carbon interaction through N-modification for enhanced ethanol synthesis from syngas and methanol

Direct conversion of syngas into ethanol is an attractive process because of its short route and high-added value, but remains an enormous challenge due to the low selectivity caused by unclear active sites. Here, the Cu(111) supported N-modified graphene fragments C13-mNm/Cu(111) (m = 0-2) are demonstrated to be an efficient catalyst for fabricating ethanol from syngas and methanol. Our results suggest that the Cu-carbon interaction not only facilitates CO activation, but also significantly affects the adsorption stability of C2 intermediates and finally changes the fundamental reaction mechanism. The impeded hydrogenation performance of C13/Cu(111) due to the introduced Cu-carbon interaction is dramatically improved by N-doping. Multiple analyses reveal that the promoted electron transfer and the enhanced electron endowing ability of C13-mNm/Cu(111) (m = 1-2) to the co-adsorbed CH3CHxOH (x = 0-1) and H are deemed to be mainly responsible for the remarkable enhancement in hydrogenation ability. From the standpoint of the frontier molecular orbital, the decreased HOMO-LUMO gap and the increased overlap extent of HOMO and LUMO with the doping of N atoms also further verify the more facile hydrogenation reactions. Clearly, the Cu-carbon interaction through N-modification is of critical importance in ethanol formation. The final hydrogenation reaction during ethanol formation is deemed to be the rate-controlling step. The insights gained here could shed new light on the nature of Cu-carbon interaction in carbon material modified Cu-based catalysts for ethanol synthesis, which could be extended to design and modify other metal-carbon catalysts.

Copper-Graphene Composite (CGC) Conductors: Synthesis, Microstructure, and Electrical Performance

Improving the electrical performance of copper, the most widely used electrical conductor in the world is of vital importance to the progress of key technologies, including electric vehicles, portable devices, renewable energy, and power grids. Copper-graphene composite (CGC) stands out as the most promising candidate for high-performance electrical conductor applications. This can be attributed to the superior properties of graphene fillers embedded in CGC, including excellent electrical and thermal conductivity, corrosion resistance, and high mechanical strength. This review highlights the recent progress of CGC conductors, including their fabrication processes, electrical performances, mechanisms of copper-graphene interplay, and potential applications.

Overcoming the Incompatibility Between Electrical Conductivity and Electromagnetic Transmissivity: A Graphene Glass Fiber Fabric Design Strategy

Conventional conductive materials such as metals are crucial functional components of conductive systems in diverse electronic instruments. However, their severe intrinsic impedance mismatch with air dielectric causes strong reflection of incident electromagnetic waves, and the resulting low electromagnetic transmissivity typically interferes with surrounding electromagnetic signal communications in modern multifunction-integrated instruments. Herein, graphene glass fiber fabric (GGFF) that merges intrinsic electrical and electromagnetic properties of graphene with dielectric attributes and highly porous macrostructure of glass fiber fabric (GFF) is innovatively developed. Using a novel decoupling chemical vapor deposition growth strategy, high-quality and layer-limited graphene is prepared on noncatalytic nonmetallic GFF in a controlled manner; this is pivotal to realizing GGFF with the desired compatibility among high conductivity, low electromagnetic reflectivity, and high electromagnetic transmissivity. At the same sheet resistance over a wide range of values (250-3000 Ω·sq-1), the GGFF exhibits significantly lower electromagnetic reflectivity (by 0.42-0.51) and higher transmissivity (by 0.27-0.62) than those of its metal-based conductive counterpart (CuGFF). The material design strategy reported herein provides a constructive solution to eliminate the incompatibility between electrical conductivity and electromagnetic transmissivity faced by conventional conductive materials, spotlighting the applicability of GGFF in electric heating scenarios in radar, antenna, and stealth systems.

Reproducible graphene synthesis by oxygen-free chemical vapour deposition

Chemical vapour deposition (CVD) synthesis of graphene on copper has been broadly adopted since the first demonstration of this process1. However, widespread use of CVD-grown graphene for basic science and applications has been hindered by challenges with reproducibility2 and quality3. Here we identify trace oxygen as a key factor determining the growth trajectory and quality for graphene grown by low-pressure CVD. Oxygen-free chemical vapour deposition (OF-CVD) synthesis is fast and highly reproducible, with kinetics that can be described by a compact model, whereas adding trace oxygen leads to suppressed nucleation and slower/incomplete growth. Oxygen affects graphene quality as assessed by surface contamination, emergence of the Raman D peak and decrease in electrical conductivity. Epitaxial graphene grown in oxygen-free conditions is contamination-free and shows no detectable D peak. After dry transfer and boron nitride encapsulation, it shows room-temperature electrical-transport behaviour close to that of exfoliated graphene. A graphite-gated device shows well-developed integer and fractional quantum Hall effects. By highlighting the importance of eliminating trace oxygen, this work provides guidance for future CVD system design and operation. The increased reproducibility and quality afforded by OF-CVD synthesis will broadly influence basic research and applications of graphene.

Long-Range Uniform Deposition of Ag Nanoseed on Cu Current Collector for High-Performance Lithium Metal Batteries

Uniform lithium deposition is essential to hinder dendritic growth. Achieving this demands even seed material distribution across the electrode, posing challenges in correlating the electrode's surface structure with the uniformity of seed material distribution. In this study, the effect of periodic surface and facet orientation on seed distribution is investigated using a model system consisting of a wrinkled copper (Cu)/graphene structure with a [100] facet orientation. A new methodology is developed for uniformly distributed silver (Ag) nanoparticles over a large area by controlling the surface features of Cu substrates. The regularly arranged Ag nanoparticles, with a diameter of 26.4 nm, are fabricated by controlling the Cu surface condition as [100]-oriented wrinkled Cu. The wrinkled Cu guides a deposition site for spherical Ag nanoparticles, the [100] facet determines the Ag morphology, and the presence of graphene leads to spacings of Ag seeds. This patterned surface and high lithiophilicity, with homogeneously distributed Ag nanoparticles, lead to uniform Li+ flux and reduced nucleation energy barrier, resulting in excellent battery performance. The electrochemical measurements exhibit improved cyclic stability over 260 cycles at 0.5 mA cm-2 and 100 cycles at 1.0 mA cm-2 and enhanced kinetics even under a high current density of 5.0 mA cm-2.

Operando Characterization and Molecular Simulations Reveal the Growth Kinetics of Graphene on Liquid Copper During Chemical Vapor Deposition

In recent years, liquid metal catalysts have emerged as a compelling choice for the controllable, large-scale, and high-quality synthesis of two-dimensional materials. At present, there is little mechanistic understanding of the intricate catalytic process, though, of its governing factors or what renders it superior to growth at the corresponding solid catalysts. Here, we report on a combined experimental and computational study of the kinetics of graphene growth during chemical vapor deposition on a liquid copper catalyst. By monitoring the growing graphene flakes in real time using in situ radiation-mode optical microscopy, we explore the growth morphology and kinetics over a wide range of CH4-to-H2 pressure ratios and deposition temperatures. Constant growth rates of the flakes' radius indicate a growth mode limited by precursor attachment, whereas methane-flux-dependent flake shapes point to limited precursor availability. Large-scale free energy simulations enabled by an efficient machine-learning moment tensor potential trained to density functional theory data provide quantitative barriers for key atomic-scale growth processes. The wealth of experimental and theoretical data can be consistently combined into a microkinetic model that reveals mixed growth kinetics that, in contrast to the situation at solid Cu, is partly controlled by precursor attachment alongside precursor availability. Key mechanistic aspects that directly point toward the improved graphene quality are a largely suppressed carbon dimer attachment due to the facile incorporation of this precursor species into the liquid surface and a low-barrier ring-opening process that self-heals 5-membered rings resulting from remaining dimer attachments.

Toward the Production of Super Graphene

The quality requirements of graphene depend on the applications. Some have a high tolerance for graphene quality and even require some defects, while others require graphene as perfect as possible to achieve good performance. So far, synthesis of large-area graphene films by chemical vapor deposition of carbon precursors on metal substrates, especially on Cu, remains the main way to produce high-quality graphene, which has been significantly developed in the past 15 years. However, although many prototypes are demonstrated, their performance is still more or less far from the theoretical property limit of graphene. This review focuses on how to make super graphene, namely graphene with a perfect structure and free of contaminations. More specially, this study focuses on graphene synthesis on Cu substrates. Typical defects in graphene are first discussed together with the formation mechanisms and how they are characterized normally, followed with a brief review of graphene properties and the effects of defects. Then, the synthesis progress of super graphene from the aspects of substrate, grain size, wrinkles, contamination, adlayers, and point defects are reviewed. Graphene transfer is briefly discussed as well. Finally, the challenges to make super graphene are discussed and a strategy is proposed.

Area-selective atomic layer deposition on 2D monolayer lateral superlattices

The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direct deposition of target materials on the desired area using a deposition barrier, has emerged as an alternative patterning process. However, the AS-ALD process remains challenging to use for the improvement of patterning resolution and selectivity. In this study, we report a superlattice-based AS-ALD (SAS-ALD) process using a two-dimensional (2D) MoS2-MoSe2 lateral superlattice as a pre-defining template. We achieved a minimum half pitch size of a sub-10 nm scale for the resulting AS-ALD on the 2D superlattice template by controlling the duration time of chemical vapor deposition (CVD) precursors. SAS-ALD introduces a mechanism that enables selectivity through the adsorption and diffusion processes of ALD precursors, distinctly different from conventional AS-ALD method. This technique facilitates selective deposition even on small pattern sizes and is compatible with the use of highly reactive precursors like trimethyl aluminum. Moreover, it allows for the selective deposition of a variety of materials, including Al2O3, HfO2, Ru, Te, and Sb2Se3.

Electron beam-induced demetallation of Fe, Co, Ni, Cu, Zn, Pd, and Pt metalloporphyrins: insights in e-beam chemistry and metal cluster formations

Electron beams are versatile tools for nanoscale fabrication processes, however, the underlying e-beam chemistry remains in its infancy. Through operando transmission electron microscopy investigations, we elucidate a redox-driven cargo release of individual metal atoms triggered by electron beams. The chosen organic delivery molecule, tetraphenylporphyrin (TPP), proves highly versatile, forming complexes with nearly all metals from the periodic table and being easily processed in solution. A comprehensive cinematographic analysis of the dynamics of single metal atoms confirms the nearly instantaneous ejection of complexed metal atoms under an 80 kV electron beam, underscoring the system's broad versatility. Providing mechanistic insights, we employ density functional theory to support the proposed reductive demetallation pathway facilitated by secondary electrons, contributing novel perspectives to electron beam-mediated chemical reaction mechanisms. Lastly, our findings demonstrate that all seven metals investigated form nanoclusters once ejected from TPP, highlighting the method's potential for studying and developing sustainable single-atom and nanocluster catalysts.

Precise synthesis of graphene by chemical vapor deposition

Graphene, a typical representative of the family of two-dimensional (2D) materials, possesses a series of phenomenal physical properties. To date, numerous inspiring discoveries have been made on its structures, properties, characterization, synthesis, transfer and applications. The real practical applications of this magic material indeed require large-scale synthesis and precise control over its structures, such as size, crystallinity, layer number, stacking order, edge type and contamination levels. Nonetheless, studies on the precise synthesis of graphene are far from satisfactory currently. Our review aims to deal with the precise synthesis of four critical graphene structures, including single-crystal graphene (SCG), AB-stacked bilayer graphene (AB-BLG), etched graphene and clean graphene. Meanwhile, existing problems and future directions in the precise synthesis of graphene are also briefly discussed.

Advancing Molecular Sieving via Å-Scale Pore Tuning in Bottom-Up Graphene Synthesis

Porous graphene films are attractive as a gas separation membrane given that the selective layer can be just one atom thick, allowing high-flux separation. A favorable aspect of porous graphene is that the pore size, essentially gaps created by lattice defects, can be tuned. While this has been demonstrated for postsynthetic, top-down pore etching in graphene, it does not exist in the more scalable, bottom-up synthesis of porous graphene. Inspired by the mechanism of precipitation-based synthesis of porous graphene over catalytic nickel foil, we herein conceive an extremely simple way to tune the pore size. This is implemented by increasing the cooling rate by over 100-fold from -1 °C min-1 to over -5 °C s-1. Rapid cooling restricts carbon diffusion, resulting in a higher availability of dissolved carbon for precipitation, as evidenced by quantitative carbon-diffusion simulation, measurement of carbon concentration as a function of nickel depth, and imaging of the graphene nanostructure. The resulting enhanced grain (inter)growth reduces the effective pore size which leads to an increase of the H2/CH4 separation factor from 6.2 up to 53.3.

Monolayer Borophene Formation on Cu(111) Surface Triggered by ⟨ 1 1 ¯ 0 ⟩ $\langle {1\bar{1}0} \rangle $ Step Edge

Borophene, a promising material with potential applications in electronics, energy storage, and sensors, is successfully grown as a monolayer on Ag(111), Cu(111), and Au(111) surfaces using molecular beam epitaxy. The growth of two-dimensional borophene on Ag(111) and Au(111) is proposed to occur via surface adsorption and boron segregation, respectively. However, the growth mode of borophene on Cu(111) remains unclear. To elucidate this, scanning tunneling microscopy in conjunction with theoretical calculations is used to study the phase transformation of boron nanostructures under post-annealing treatments. Results show that by elevating the substrate temperature, boron nanostructures undergo an evolution from amorphous boron to striped-phase borophene (η = 1/6) adhering to the Cu⟨ 1 1 ¯ 0 ⟩ $\langle {1\bar{1}0} \rangle $ step edge, and finally to irregularly shaped β-type borophene (η = 5/36) either on the substrate surface or embedded in the topmost Cu layer. dI/dV spectra recorded near the borophene/Cu lateral interfaces indicate that the striped-phase borophene is a metastable phase, requiring more buckling and electron transfer to stabilize the crystal structure. These findings offer not only an in-depth comprehension of the β-type borophene formation on Cu(111), but also hold potential for enabling borophene synthesis on weakly-binding semiconducting or insulating substrates with 1D active defects.

An Ultra-Low-Temperature Alternating Current Filter

Traditional alternating current filter based on aluminum electrolytic capacitors (AECs) suffer from abrupt drop of filtering capability at ultra-low temperatures (≤-30 °C), which greatly hinders the reliable working of electronics at extremely cold conditions. Herein, an ultra-low-temperature alternating current (AC) filter for the first time enabled by high-frequency supercapacitor based on covalently bonded hollow carbon onion-graphene hybrid structure is reported. It is found that the covalent bonding junctions enable high electronic conductivity and efficient ion adsorption/desorption behavior in the hybrid structure. Moreover, the hybrid structure owns positive curvature and shallows pores for fast ion diffusion kinetics. Consequently, the supercapacitor exhibits a record short resistor-capacitor time constant (τRC ) of 0.098 ms at 120 Hz at room temperature. Combining with low-melting-point electrolyte, the supercapacitor possesses excellent filtering capability and can output stable direct current signal with low fluctuation coefficients in a temperature range of -50 to 0 °C. More interestingly, the filter presents high negative phase angle, low dissipation factor, short τRC , and high capacitance retention below -30 °C, whereas AEC cannot work properly owing to its phase angle<45°. This work realizes the fabrication of an ultra-low-temperature AC filter, which presents a critical step forward for promoting the development of ultra-low-temperature electronics.

Block Copolymer-Directed Facile Synthesis of N-Doped Mesoporous Graphitic Carbon for Reliable, High-Performance Zn Ion Hybrid Supercapacitor

Ordered mesoporous carbons (OMCs) are promising materials for cathode materials of a Zn ion hybrid capacitor (Zn HC) due to their high surface area and interconnected porous structure. Graphitization of the framework and nitrogen doping have been used to improve the energy storage performance of the OMCs by enhancing electrical conductivity, pseudocapacitive reaction sites, and surface affinity toward aqueous electrolytes. Thus, when both methods are simultaneously implemented to the OMCs, the Zn HC would have improved energy storage performance. Herein, we introduce a facile synthetic method for N-doped mesoporous graphitic carbon (N-mgc) by utilizing polystyrene-block-poly(2-vinlypyridine) copolymer (PS-b-P2VP) as both soft-template and carbon/nitrogen sources. Co-assembly of PS-b-P2VP with Ni precursors for graphitization formed a mesostructured composite, which was converted to N-doped graphitic carbon through catalytic pyrolysis. After selective removal of Ni, N-mgc was prepared. The obtained N-mgc exhibited interconnected mesoporous structure with high nitrogen content and high surface area. When N-mgc was employed as a cathode material in Zn ion HC, excellent energy storage performance was achieved: a high specific capacitance (43 F/g at 0.2 A/g), a high energy density of 19.4 Wh/kg at a power density of 180 W/kg, and reliable cycle stability (>3000 cycles).

Unraveling the role of substrate materials in governing the carbon/carbide growth of molten carbonate electrolysis of CO2

The interface interaction between deposited carbon and metallic electrode substrates in tuning the growth of CO2-derived products (e.g., amorphous carbon, graphite, carbide) is mostly unexplored for the high-temperature molten-salt electrolysis of CO2. Herein, the carbon deposition on different transition-metal cathodes was performed to reveal the role of substrate materials in the growth of cathodic products. At the initial stage of electrolysis, transition metals (e.g., Cr, Fe, Ni, and Co) that exhibit appropriate carbon-binding ability (in range of -30 to 60 kJ mol-1) allow carbon diffusing into and then dissociating from metal to form graphite, as the carbon-binding ability can be determined by the Gibbs free energy of formation of metallic carbides. The catalytic cathodes showing super strong (e.g., Ti, V, Mo, and W) or weak (e.g., Cu) carbon-binding ability produce stable carbides or amorphous carbon, respectively. However, the subsequent deposited carbon is immune to the catalysis of the substrate, forming amorphous carbon nanoparticles and nanofibers on the surface of carbides and graphite, respectively. This paper not only highlights the role of the catalytic cathodes for carbon deposition, but also offers a material selection principle for the controllable growth of CO2-derived products in molten salts.

Recent Understanding in the Chemical Vapor Deposition of Multilayer Graphene: Controlling Uniformity, Thickness, and Stacking Configuration

Multilayer graphene has attracted significant attention because its physical properties can be tuned by stacking its layers in a particular configuration. To apply the intriguing properties of multilayer graphene in various optoelectronic or spintronic devices, it is essential to develop a synthetic method that enables the control of the stacking configuration. This review article presents the recent progress in the synthesis of multilayer graphene by chemical vapor deposition (CVD). First, we discuss the CVD of multilayer graphene, utilizing the precipitation or segregation of carbon atoms from metal catalysts with high carbon solubility. Subsequently, we present novel CVD approaches to yield uniform and thickness-controlled multilayer graphene, which goes beyond the conventional precipitation or segregation methods. Finally, we introduce the latest studies on the control of stacking configurations in bilayer graphene during CVD processes.

Multiscale Model of CVD Growth of Graphene on Cu(111) Surface

Due to its outstanding properties, graphene has emerged as one of the most promising 2D materials in a large variety of research fields. Among the available fabrication protocols, chemical vapor deposition (CVD) enables the production of high quality single-layered large area graphene. To better understand the kinetics of CVD graphene growth, multiscale modeling approaches are sought after. Although a variety of models have been developed to study the growth mechanism, prior studies are either limited to very small systems, are forced to simplify the model to eliminate the fast process, or they simplify reactions. While it is possible to rationalize these approximations, it is important to note that they have non-trivial consequences on the overall growth of graphene. Therefore, a comprehensive understanding of the kinetics of graphene growth in CVD remains a challenge. Here, we introduce a kinetic Monte Carlo protocol that permits, for the first time, the representation of relevant reactions on the atomic scale, without additional approximations, while still reaching very long time and length scales of the simulation of graphene growth. The quantum-mechanics-based multiscale model, which links kinetic Monte Carlo growth processes with the rates of occurring chemical reactions, calculated from first principles makes it possible to investigate the contributions of the most important species in graphene growth. It permits the proper investigation of the role of carbon and its dimer in the growth process, thus indicating the carbon dimer to be the dominant species. The consideration of hydrogenation and dehydrogenation reactions enables us to correlate the quality of the material grown within the CVD control parameters and to demonstrate an important role of these reactions in the quality of the grown graphene in terms of its surface roughness, hydrogenation sites, and vacancy defects. The model developed is capable of providing additional insights to control the graphene growth mechanism on Cu(111), which may guide further experimental and theoretical developments.

Phonon transition across an isotopic interface

Isotopic mixtures result in distinct properties of materials such as thermal conductivity and nuclear process. However, the knowledge of isotopic interface remains largely unexplored mainly due to the challenges in atomic-scale isotopic identification. Here, using electron energy-loss spectroscopy in a scanning transmission electron microscope, we reveal momentum-transfer-dependent phonon behavior at the h-10BN/h-11BN isotope heterostructure with sub-unit-cell resolution. We find the phonons' energy changes gradually across the interface, featuring a wide transition regime. Phonons near the Brillouin zone center have a transition regime of ~3.34 nm, whereas phonons at the Brillouin zone boundary have a transition regime of ~1.66 nm. We propose that the isotope-induced charge effect at the interface accounts for the distinct delocalization behavior. Moreover, the variation of phonon energy between atom layers near the interface depends on both of momentum transfer and mass change. This study provides new insights into the isotopic effects in natural materials.

Grain Size Engineering of CVD-Grown Large-Area Graphene Films

Graphene, a single atomic layer of graphitic carbon, has attracted much attention because of its outstanding properties hold great promise for a wide range of technological applications. Large-area graphene films (GFs) grown by chemical vapor deposition (CVD) are highly desirable for both investigating their intrinsic properties and realizing their practical applications. However, the presence of grain boundaries (GBs) has significant impacts on their properties and related applications. According to the different grain sizes, GFs can be divided into polycrystalline, single-crystal, and nanocrystalline films. In the past decade, considerable progress has been made in engineering the grain sizes of GFs by modifying the CVD processes or developing some new growth approaches. The key strategies involve controlling the nucleation density, growth rate, and grain orientation. This review aims to provide a comprehensive description of grain size engineering research of GFs. The main strategies and underlying growth mechanisms of CVD-grown large-area GFs with nanocrystalline, polycrystalline, and single-crystal structures are summarized, in which the advantages and limitations are highlighted. In addition, the scaling law of physical properties in electricity, mechanics, and thermology as a function of grain sizes are briefly discussed. Finally, the perspectives for challenges and future development in this area are also presented.

Mechanical Properties of Graphene Networks under Compression: A Molecular Dynamics Simulation

Molecular dynamics simulation is used to study and compare the mechanical properties obtained from compression and tension numerical tests of multilayered graphene with an increased interlayer distance. The multilayer graphene with an interlayer distance two-times larger than in graphite is studied first under biaxial compression and then under uniaxial tension along three different axes. The mechanical properties, e.g., the tensile strength and ductility as well as the deformation characteristics due to graphene layer stacking, are studied. The results show that the mechanical properties along different directions are significantly distinguished. Two competitive mechanisms are found both for the compression and tension of multilayer graphene—the crumpling of graphene layers increases the stresses, while the sliding of graphene layers through the surface-to-surface connection lowers it. Multilayer graphene after biaxial compression can sustain high tensile stresses combined with high plasticity. The main outcome of the study of such complex architecture is an important step towards the design of advanced carbon nanomaterials with improved mechanical properties.

In Situ Growth of Graphene Catalyzed by a Phase-Change Material at 400 °C for Wafer-Scale Optoelectronic Device Application

The use of metal foil catalysts in the chemical vapor deposition of graphene films makes graphene transfer an ineluctable part of graphene device fabrication, which greatly limits industrialization. Here, an oxide phase-change material (V₂ O₅ ) is found to have the same catalytic effect on graphene growth as conventional metals. A uniform large-area graphene film can be obtained on a 10 nm V₂ O₅ film. Density functional theory is used to quantitatively analyze the catalytic effect of V₂ O₅ . Due to the high resistance property of V₂ O₅ at room temperature, the obtained graphene can be directly used in devices with V₂ O₅ as an intercalation layer. A wafer-scale graphene-V₂ O₅ -Si (GVS) Schottky photodetector array is successfully fabricated. When illuminated by a 792 nm laser, the responsivity of the photodetector can reach 266 mA W^-1 at 0 V bias and 420 mA W^-1 at 2 V. The transfer-free device fabrication process enables high feasibility for industrialization.

Insights into the Conductive Network of Electrochemical Exfoliation with Graphite Powder as Starting Raw Material for Graphene Production

Electrochemical exfoliation starting with graphite powder as the raw material for graphene production shows superiority in cost effectiveness over the popular bulk graphite. However, the crucial conductive network inside the graphite powder electrode along with its formation and influence mechanisms remains blank. Here, an adjustable-pressure graphite powder electrode with a sandwich structure was designed for this. Appropriate encapsulation pressure is necessary and conducive to constructing a continuous and stable conductive network, but overloaded encapsulation pressure is detrimental to the exfoliation and graphene quality. With an initial encapsulation pressure (IEP) of 4 kPa, the graphite powders expand rapidly to a final stable expansion pressure of 49 kPa with a final graphene yield of 46.3%, where 84% of the graphene sheets are less than 4 layers with I_D/I_G values between 0.22 and 1.24. Increasing the IEP to 52 kPa, the expansion pressure increases to 73 kPa, but the graphene yield decreases to 39.3% with a worse graphene quality including higher layers and I_D/I_G values of 1.68-2.13. In addition, small-size graphite powders are not suitable for the electrochemical exfoliation. With the particle size decreasing from 50 to 325 mesh, the graphene yield decreases almost linearly from 46.3% to 5.5%. Conductive network and electrolyte migration synergize and constrain each other, codetermining the electrochemical exfoliation. Within an encapsulated structure, the electrochemical exfoliation of the graphite powder electrode proceeds from the outside to the inside. The insights revealed here will provide direction for further development of electrochemical exfoliation of graphite powder to produce graphene.

Nanoscale characterization of the heterogeneous interfacial oxidation layer of graphene/Cu based on a SEM electron beam induced reduction effect

Characterization of the interfacial oxidation layer of graphene/metal is a challenging task using conventional spectroscopy techniques because interfacial oxidation is heterogeneous at the nanoscale underneath the graphene. Here we developed a feasible method for nanoscale characterization of the interfacial oxidation layer of graphene/Cu (Gr/Cu) based on scanning electron microscopy (SEM) electron beam irradiation (EBI) induced reduction of interfacial oxides (SEM EBI-RIO method) at room temperature. The change in the thickness and coverage of the interfacial Cu oxide layer induced by EBI is responsible for the observed contrast reversal or change in SEM images of a targeted area with a width down to 200 nm in the EBI time scale of seconds to minutes. This method offers the capability of mapping heterogeneous interfacial oxidation of Gr/Cu with sub-100 nm spatial resolution and determining the range of thickness (1-5 nm) of the interfacial oxide layer. The SEM EBI-RIO method will be a powerful method to complement X-ray photoelectron spectroscopy (XPS), Raman microscopy, and high resolution transmission electron microscopy (HRTEM) for characterization of the interfacial oxidation layer of 2D materials and devices.

Formation of Graphene on Gold-Nickel Surface Alloys

Nickel (Ni)-catalyzed growth of a single- or rotated-graphene layer is a well-established process above 800 K. In this report, a Au-catalyzed, low-temperature, and facile route at 500 K for graphene formation is described. The substantially lower temperature is enabled by the presence of a surface alloy of Au atoms embedded within Ni(111), which catalyzes the outward segregation of carbon atoms buried in the Ni bulk at temperatures as low as 400-450 K. The resulting surface-bound carbon in turn coalesces into graphene above 450-500 K. Control experiments on a Ni(111) surface show no evidence of carbon segregation or graphene formation at these temperatures. Graphene is identified by its out-of-plane optical phonon mode at 750 cm^-1 and its longitudinal/transverse optical phonon modes at 1470 cm^-1 while surface carbon is identified by its C-Ni stretch mode at 540 cm^-1, as probed by high-resolution electron energy-loss spectroscopy. Dispersion measurements of the phonon modes confirm the presence of graphene. Graphene formation is observed to be maximum at 0.4 ML Au coverage. The results of these systematic molecular-level investigations open the door to graphene synthesis at the low temperatures required for integration with complementary metal-oxide-semiconductor processes.

Hydrogen-Enhanced Catalytic Conversion of Amorphous Carbon to Graphene for Achieving Superlubricity

The solid-state conversion of amorphous carbon into graphene is extremely difficult, but it can be achieved in the friction experiments that induce macroscale superlubricity. However, the underlying conversion mechanisms remain elusive. Here, the friction experiments with Cu nanoparticles and (non-hydrogen (H) or H) a-C in vacuum, show the H-induced conversion of mechanical to chemical wear, resulting in the a-C's tribosoftening and nanofragmentating that produce hydrocarbon nanoclusters or molecules. It is such exactly hydrocarbon species that yield graphene at hydrogen-rich a-C friction interface, through reaction of them with Cu nanoparticles. In comparison, graphene isn't formed at Cu/non-H a-C friction interface. Atomistic simulations reveal the hydrogen-enhanced tribochemical decomposition of a-C and demonstrate the energetically favorable graphitization transformation of hydrocarbons on Cu substrates. The findings are of importance to achieve solid-state transformation between different carbon allotropes and provide a good strategy to synthesize other graphitic encapsulated catalysts with doped elements.

Two-dimensional nanomaterials: synthesis and applications in photothermal catalysis

Photothermal catalysis, as one of the emerging technologies with synergistic effects of photochemistry and thermochemistry, is highly attractive in the fields of environment and energy. Two-dimensional (2D) nanomaterials have received extensive attention toward photothermal catalysis because of their ultrathin layer structures, superior physical and optical properties, and high surface areas. These merits are beneficial for shortening the transfer distance of charge carriers, improving the efficiency of solar to thermal, and providing a great opportunity for the development of photothermal chemistry. In this review, we have summarized the state-of-art advances in various 2D nanomaterials with emphasis on the driving force and relevant mechanism of photothermal catalysis, including the involved three types, namely, localized surface plasmonic resonance (LSPR), nonradiative relaxation, and thermal vibrations of molecules. Moreover, the synthesis strategies of 2D materials and their photothermal applications in carbon dioxide (CO₂) conversion, hydrogen (H₂) production, volatile organic compounds (VOCs) degradation, and water (H₂O) purification have been discussed in detail. Ultimately, the existing challenges and prospects of future development in the field are proposed. It is believed that this review will afford a great reference for the exploration of the high-efficiency 2D nanomaterials and their structure-activity relationship.

Graphene: Preparation, tailoring, and modification

Graphene is a 2D material with fruitful electrical properties, which can be efficiently prepared, tailored, and modified for a variety of applications, particularly in the field of optoelectronic devices thanks to its planar hexagonal lattice structure. To date, graphene has been prepared using a variety of bottom-up growth and top-down exfoliation techniques. To prepare high-quality graphene with high yield, a variety of physical exfoliation methods, such as mechanical exfoliation, anode bonding exfoliation, and metal-assisted exfoliation, have been developed. To adjust the properties of graphene, different tailoring processes have been emerged to precisely pattern graphene, such as gas etching and electron beam lithography. Due to the differences in reactivity and thermal stability of different regions, anisotropic tailoring of graphene can be achieved by using gases as the etchant. To meet practical requirements, further chemical functionalization at the edge and basal plane of graphene has been extensively utilized to modify its properties. The integration and application of graphene devices is facilitated by the combination of graphene preparation, tailoring, and modification. This review focuses on several important strategies for graphene preparation, tailoring, and modification that have recently been developed, providing a foundation for its potential applications.

Innovations in the synthesis of graphene nanostructures for bio and gas sensors

Sensors play a significant role in modern technologies and devices used in industries, hospitals, healthcare, nanotechnology, astronomy, and meteorology. Sensors based upon nanostructured materials have gained special attention due to their high sensitivity, precision accuracy, and feasibility. This review discusses the fabrication of graphene-based biosensors and gas sensors, which have highly efficient performance. Significant developments in the synthesis routes to fabricate graphene-based materials with improved structural and surface properties have boosted their utilization in sensing applications. The higher surface area, better conductivity, tunable structure, and atom-thick morphology of these hybrid materials have made them highly desirable for the fabrication of flexible and stable sensors. Many publications have reported various modification approaches to improve the selectivity of these materials. In the current work, a compact and informative review focusing on the most recent developments in graphene-based biosensors and gas sensors has been designed and delivered. The research community has provided a complete critical analysis of the most robust case studies from the latest fabrication routes to the most complex challenges. Some significant ideas and solutions have been proposed to overcome the limitations regarding the field of biosensors and hazardous gas sensors.

Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer

The direct growth of graphene affording wafer-scale uniformity on insulators is paramount to electronic and optoelectronic applications; however, it remains a challenge to date, because it entails an entirely different growth mode than that over metals. Herein, the metal-catalyst-free growth of quasi-suspended graphene on a Si wafer is demonstrated using an interface-decoupling chemical vapor deposition strategy. The employment of lower-than-conventional H₂ dosage and concurrent introduction of methanol during growth can effectively weaken the interaction between the synthesized graphene and the underlying substrate. The growth mode can be thus fine-tuned, producing a predominantly monolayer graphene film with wafer-level homogeneity. Graphene thus grown on a 4 inch Si wafer enables the transfer-free fabrication of high-performance graphene-based field-effect transistor arrays that exhibit almost no shift in the charge neutral point, indicating a quasi-suspended feature of the graphene. Moreover, a carrier mobility up to 15 000 cm² V^-1 s^-1 can be attained. This study is anticipated to offer meaningful insights into the synthesis of wafer-scale high-quality graphene on dielectrics for practical graphene devices.

Transfer-Free CVD Growth of High-Quality Wafer-Scale Graphene at 300 °C for Device Mass Fabrication

Direct chemical vapor deposition of graphene on semiconductors and insulators provides high feasibility for integration of graphene devices and semiconductor electronics. However, the current methods typically rely on high temperatures (>1000 °C), which can damage the substrates. Here, a growth method for high-quality large-area graphene at 300 °C is introduced. A multizone furnace with gradient temperature control was designed according to a computational fluid dynamics model. The crucial roles of the chamber pressure in the film continuity and hydrogen composition in the graphene defect density at low temperature were revealed. As a result, a uniform graphene film with the Raman ratio I_D/I_G = 0.08 was obtained. Furthermore, a technique of laminating single-crystal Cu foil as a sacrificial layer on the substrate was proposed to realize transfer-free growth, and a wafer-scale graphene transistor array was demonstrated with good performance consistency, which paves the way for mass fabrication of graphene devices.

Copper sulfide nanoribbon growth triggered by carbon nanotube aggregation via dialysis

The growth of copper sulfide (Cu _x S) nanoribbons, a class of Cu _x S nanomaterials, was achieved by the aggregation of single-walled carbon nanotubes (SWCNTs) via a dialysis process. The obtained nanoribbon structure and its constituent elements on a film of SWCNT aggregates were confirmed by transmission electron microscopy (TEM) and scanning transmittance electron microscopy-energy dispersive X-ray spectroscopy. The subsequently obtained TEM images and Raman spectra revealed that nucleus synthesis and subsequent growth of Cu _x S nanoribbons occurred during the aggregation of SWCNTs. The growth procedure described in this work provides an approach for the wet chemical synthesis of metal sulfide nanomaterials.

The carbon chain growth during the onset of CVD graphene formation on γ-Al2O3 is promoted by unsaturated CH2 ends

Chemical vapor deposition of methane onto a template of alumina (Al₂O₃) nanoparticles is a prominent synthetic strategy of graphene meso-sponge, a new class of nano porous carbon materials consisting of single-layer graphene walls. However, the elementary steps controlling the early stages of graphene growth on Al₂O₃ surfaces are still not well understood. In this study, density functional theory calculations provide insights into the initial stages of graphene growth. We have modelled the mechanism of CH₄ dissociation on the (111), (110), (100), and (001) γ-Al₂O₃ surfaces. Subsequently, we have considered the reaction pathway leading to the formation of a C6 ring. The γ-Al₂O₃(110) and γ-Al₂O₃(100) are both active for CH₄ dissociation, but the (100) surface has higher catalytic activity towards the carbon growth reaction. The overall mechanism involves the formation of the reactive intermediate CH₂* that then can couple to form C_nH_2n* (n = 2-6) intermediates with unsaturated CH₂ ends. The formation of these species, which are not bound to the surface-active sites, promotes the sustained carbon growth in a nearly barrierless process. Also, the short distance between terminal carbon atoms leads to strong interactions, which might lead to the high activity between unsaturated CH₂* of the hydrocarbon chain. Analysis of the electron localization and geometries of the carbon chains reveals the formation of C-Al-σ bonds with the chain growing towards the vacuum rather than C-Al-π bonds covering the γ-Al₂O₃(100) surface. This growth behaviour prevents catalyst poisoning during the initial stage of graphene nucleation.

On the Distinctive Hardness, Anti-Corrosion Properties and Mechanisms of Flame-Deposited Carbon Coating with a Hierarchical Structure in Contrast to a Graphene Layer via Chemical Vapor Deposition

Two carbonaceous (amorphous carbon and graphene) coatings were catalytically grown on bulk Ni plates. It was found that the flame-deposited carbon (FDC) layers exhibited a unique hierarchical structure with the formation of FDC/Ni nano-interlocking interface. The effect of the flame coating time on its corrosion protective efficiency (PE) was studied and compared with that of graphene coating produced via chemical vapor deposition. The FDC grown for 10 min exhibited a PE of 92.7%, which was much greater than that of the graphene coating (75.6%). The anti-corrosive mechanisms of both coatings were revealed and compared. For graphene coatings, the higher reaction temperature than that for FDC resulted in large grain boundaries inherent in the coating. Such boundaries were weak points and easily initiated grain boundary corrosion. In contrast, corrosion started at only certain local defects in FDC layers, whose unique interface structure likely promoted its PE as well. Moreover, after the coating process, the hardness of FDC-coated Ni remained almost unchanged, in contrast to that of graphene-coated samples (reduced by ~30%). This is suggested to be related to the crystal structure evolution of the Ni substrate caused by the heat treatment accompanying the coating process.

Developing Graphene Grids for Cryoelectron Microscopy

Cryogenic electron microscopy (cryo-EM) single particle analysis has become one of the major techniques used to study high-resolution 3D structures of biological macromolecules. Specimens are generally prepared in a thin layer of vitrified ice using a holey carbon grid. However, the sample quality using this type of grid is not always ideal for high-resolution imaging even when the specimens in the test tube behave ideally. Various problems occur during a vitrification procedure, including poor/nonuniform distribution of particles, preferred orientation of particles, specimen denaturation/degradation, high background from thick ice, and beam-induced motion, which have become important bottlenecks in high-resolution structural studies using cryo-EM in many projects. In recent years, grids with support films made of graphene and its derivatives have been developed to efficiently solve these problems. Here, the various advantages of graphene grids over conventional holey carbon film grids, functionalization of graphene support films, production methods of graphene grids, and origins of pristine graphene contamination are reviewed and discussed.

Copper acetate-facilitated transfer-free growth of high-quality graphene for hydrovoltaic generators

Direct synthesis of high-quality graphene on dielectric substrates without a transfer process is of vital importance for a variety of applications. Current strategies for boosting high-quality graphene growth, such as remote metal catalyzation, are limited by poor performance with respect to the release of metal catalysts and hence suffer from a problem with metal residues. Herein, we report an effective approach that utilizes a metal-containing species, copper acetate, to continuously supply copper clusters in a gaseous form to aid transfer-free growth of graphene over a wafer scale. The thus-derived graphene films were found to show reduced multilayer density and improved electrical performance and exhibited a carrier mobility of 8500 cm2 V-1 s-1. Furthermore, droplet-based hydrovoltaic electricity generator devices based on directly grown graphene were found to exhibit robust voltage output and long cyclic stability, in stark contrast to their counterparts based on transferred graphene, demonstrating the potential for emerging energy harvesting applications. The work presented here offers a promising solution to organize the metal catalytic booster toward transfer-free synthesis of high-quality graphene and enable smart energy generation.

Interface collisions with diffusive mass transport

We report on a linear Langevin model that describes the evolution of the roughness of two interfaces that move towards each other and are coupled by a diffusion field. This model aims at describing the closing of the gap between two 2D material domains during growth, and the subsequent formation of a rough grain boundary. We assume that deposition occurs in the gap between the two domains and that the growth units diffuse and may attach to the edges of the domains. These units can also detach from edges, diffuse, and reattach elsewhere. For slow growth, the edge roughness increases monotonously and then saturates at some equilibrium value. For fast growth, the roughness exhibits a maximum just before the collision between the two interfaces, which is followed by a minimum. The peak of the roughness can be dominated by statistical fluctuations or by edge instabilities. A phase diagram with three regimes is obtained: Slow growth without peak, peak dominated by statistical fluctuations, and peak dominated by instabilities. These results reproduce the main features observed in kinetic Monte Carlo simulations.

Advanced wearable biosensors for the detection of body fluids and exhaled breath by graphene

Given the huge economic burden caused by chronic and acute diseases on human beings, it is an urgent requirement of a cost-effective diagnosis and monitoring process to treat and cure the disease in their preliminary stage to avoid severe complications. Wearable biosensors have been developed by using numerous materials for non-invasive, wireless, and consistent human health monitoring. Graphene, a 2D nanomaterial, has received considerable attention for the development of wearable biosensors due to its outstanding physical, chemical, and structural properties. Moreover, the extremely flexible, foldable, and biocompatible nature of graphene provide a wide scope for developing wearable biosensor devices. Therefore, graphene and its derivatives could be trending materials to fabricate wearable biosensor devices for remote human health management in the near future. Various biofluids and exhaled breath contain many relevant biomarkers which can be exploited by wearable biosensors non-invasively to identify diseases. In this article, we have discussed various methodologies and strategies for synthesizing and pattering graphene. Furthermore, general sensing mechanism of biosensors, and graphene-based biosensing devices for tear, sweat, interstitial fluid (ISF), saliva, and exhaled breath have also been explored and discussed thoroughly. Finally, current challenges and future prospective of graphene-based wearable biosensors have been evaluated with conclusion. Graphene is a promising 2D material for the development of wearable sensors. Various biofluids (sweat, tears, saliva and ISF) and exhaled breath contains many relevant biomarkers which facilitate in identify diseases. Biosensor is made up of biological recognition element such as enzyme, antibody, nucleic acid, hormone, organelle, or complete cell and physical (transducer, amplifier), provide fast response without causing organ harm.

3D Continuously Porous Graphene for Energy Applications

Constructing bulk graphene materials with well-reserved 2D properties is essential for device and engineering applications of atomically thick graphene. In this article, the recent progress in the fabrications and applications of sterically continuous porous graphene with designable microstructures, chemistries, and properties for energy storage and conversion are reviewed. Both template-based and template-free methods have been developed to synthesize the 3D continuously porous graphene, which typically has the microstructure reminiscent of pseudo-periodic minimal surfaces. The 3D graphene can well preserve the properties of 2D graphene of being highly conductive, surface abundant, and mechanically robust, together with unique 2D electronic behaviors. Additionally, the bicontinuous porosity and large curvature offer new functionalities, such as rapid mass transport, ample open space, mechanical flexibility, and tunable electric/thermal conductivity. Particularly, the 3D curvature provides a new degree of freedom for tailoring the catalysis and transport properties of graphene. The 3D graphene with those extraordinary properties has shown great promises for a wide range of applications, especially for energy conversion and storage. This article overviews the recent advances made in addressing the challenges of developing 3D continuously porous graphene, the benefits and opportunities of the new materials for energy-related applications, and the remaining challenges that warrant future study.

Growth of 2D Materials at the Wafer Scale

Wafer-scale growth has become a critical bottleneck for scaling up applications of van der Waal (vdW) layered 2D materials in high-end electronics and optoelectronics. Most vdW 2D materials are initially obtained through top-down synthesis methods, such as exfoliation, which can only prepare small flakes on a micrometer scale. Bottom-up growth can enable 2D flake growth over a large area. However, seamless merging of these flakes to form large-area continuous films with well-controlled layer thickness and lattice orientation is still a significant challenge. This review briefly introduces several vdW layered 2D materials covering their lattice structures, representative physical properties, and potential roles in large-scale applications. Then, several methods used to grow vdW layered 2D materials at the wafer scale are reviewed in depth. In particular, three strategies are summarized that enable 2D film growth with a single-crystalline structure over the whole wafer: growth of an isolated domain, growth of unidirectional domains, and conversion of oriented precursors. After that, the progress in using wafer-scale 2D materials in integrated devices and advanced epitaxy is reviewed. Finally, future directions in the growth and scaling of vdW layered 2D materials are discussed.

Dry Reforming of Methane on NiCu and NiPd Model Systems: Optimization of Carbon Chemistry

A series of ultra-clean, unsupported Cu-doped and Pd-doped Ni model catalysts was investigated to develop the fundamental concept of metal doping impact on the carbon tolerance and catalytic activity in the dry reforming of methane (DRM). Wet etching with concentrated HNO3 and a subsequent single sputter–anneal cycle resulted in the full removal of an already existing oxidic passivation layer and segregated and/or ambient-deposited surface and bulk impurities to yield ultra-clean Ni substrates. Carbon solubility, support effects, segregation processes, cyclic operation temperatures, and electronic and ensemble effects were all found to play a crucial role in the catalytic activity and stability of these systems, as verified by X-ray photoelectron spectroscopy (XPS) surface and bulk characterization. Minor Cu promotion showed the almost complete suppression of coking with a moderate reduction in catalytic activity, while high Cu loadings facilitated carbon growth alongside severe catalytic deactivation. The improved carbon resistance stems from an increased CH4 dissociation barrier, decreased carbon solubility in the bulk, good prevailing CO2 activation properties and enhanced CO desorption. Cyclic DRM operation on surfaces with Cu content that is too high leads to impaired carbon oxidation kinetics by CO2 and causes irreversible carbon deposition. Thus, an optimal and stable NiCu composition was found in the region of 70–90 atomic % Ni, which allows an appropriate high syngas production rate to be retained alongside a total coking suppression during DRM. In contrast, the more Cu-rich NiCu systems showed a limited stability under reaction conditions, leading to undesired surface and bulk segregation processes of Cu. The much higher carbon deposition rate and solubility of unsupported NiPd and Pd model catalysts results in severe carbon deposition and catalytic deactivation. To achieve enhanced carbon conversion and de-coking, an active metal oxide boundary is required, allowing for the increased clean-off of re-segregated carbon via the inverse Boudouard reaction. The carbon bulk diffusion on the investigated systems depends strongly on the composition and decreases in the following order: Pd > NiPd > Ni > NiCu > Cu.

Imaging of isotope diffusion using atomic-scale vibrational spectroscopy

The spatial resolutions of even the most sensitive isotope analysis techniques based on light or ion probes are limited to a few hundred nanometres. Although vibrational spectroscopy using electron probes has achieved higher spatial resolution^1-3, the detection of isotopes at the atomic level⁴ has been challenging so far. Here we show the unambiguous isotopic imaging of ¹²C carbon atoms embedded in ¹³C graphene and the monitoring of their self-diffusion via atomic-level vibrational spectroscopy. We first grow a domain of ¹²C carbon atoms in a pre-existing crack of ¹³C graphene, which is then annealed at 600 degrees Celsius for several hours. Using scanning transmission electron microscopy-electron energy loss spectroscopy, we obtain an isotope map that confirms the segregation of ¹²C atoms that diffused rapidly. The map also indicates that the graphene layer becomes isotopically homogeneous over 100-nanometre regions after 2 hours. Our results demonstrate the high mobility of carbon atoms during growth and annealing via self-diffusion. This imaging technique can provide a fundamental methodology for nanoisotope engineering and monitoring, which will aid in the creation of isotope labels and tracing at the nanoscale.