Sub-nanometer atomic layer deposition for spintronics in magnetic tunnel junctions based on graphene spin-filtering membranes

Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media

SiO₂ films were grown to thicknesses below 15 nm by ozone-assisted atomic layer deposition. The graphene was a chemical vapor deposited on copper foil and transferred wet-chemically to the SiO₂ films. On the top of the graphene layer, either continuous HfO₂ or SiO₂ films were grown by plasma-assisted atomic layer deposition or by electron beam evaporation, respectively. Micro-Raman spectroscopy confirmed the integrity of the graphene after the deposition processes of both the HfO₂ and SiO₂. Stacked nanostructures with graphene layers intermediating the SiO₂ and either the SiO₂ or HfO₂ insulator layers were devised as the resistive switching media between the top Ti and bottom TiN electrodes. The behavior of the devices was studied comparatively with and without graphene interlayers. The switching processes were attained in the devices supplied with graphene interlayers, whereas in the media consisting of the SiO₂-HfO₂ double layers only, the switching effect was not observed. In addition, the endurance characteristics were improved after the insertion of graphene between the wide band gap dielectric layers. Pre-annealing the Si/TiN/SiO₂ substrates before transferring the graphene further improved the performance.

Artificial Graphene Spin Polarized Electrode for Magnetic Tunnel Junctions

2D materials offer the ability to expose their electronic structure to manipulations by a proximity effect. This could be harnessed to craft properties of 2D interfaces and van der Waals heterostructures in devices and quantum materials. We explore the possibility to create an artificial spin polarized electrode from graphene through proximity interaction with a ferromagnetic insulator to be used in a magnetic tunnel junction (MTJ). Ferromagnetic insulator/graphene artificial electrodes were fabricated and integrated in MTJs based on spin analyzers. Evidence of the emergence of spin polarization in proximitized graphene layers was observed through the occurrence of tunnel magnetoresistance. We deduced a spin dependent splitting of graphene's Dirac band structure (∼15 meV) induced by the proximity effect, potentially leading to full spin polarization and opening the way to gating. The extracted spin signals illustrate the potential of 2D quantum materials based on proximity effects to craft spintronics functionalities, from vertical MTJs memory cells to logic circuits.

Almost Perfect Spin Filtering in Graphene-Based Magnetic Tunnel Junctions

We report on large spin-filtering effects in epitaxial graphene-based spin valves, strongly enhanced in our specific multilayer case. Our results were obtained by the effective association of chemical vapor deposited (CVD) multilayer graphene with a high quality epitaxial Ni(111) ferromagnetic spin source. We highlight that the Ni(111) spin source electrode crystallinity and metallic state are preserved and stabilized by multilayer graphene CVD growth. Complete nanometric spin valve junctions are fabricated using a local probe indentation process, and spin properties are extracted from the graphene-protected ferromagnetic electrode through the use of a reference Al₂O₃/Co spin analyzer. Strikingly, spin-transport measurements in these structures give rise to large negative tunnel magneto-resistance TMR = -160%, pointing to a particularly large spin polarization for the Ni(111)/Gr interface P_Ni/Gr, evaluated up to -98%. We then discuss an emerging physical picture of graphene-ferromagnet systems, sustained both by experimental data and ab initio calculations, intimately combining efficient spin filtering effects arising (i) from the bulk band structure of the graphene layers purifying the extracted spin direction, (ii) from the hybridization effects modulating the amplitude of spin polarized scattering states over the first few graphene layers at the interface, and (iii) from the epitaxial interfacial matching of the graphene layers with the spin-polarized Ni surface selecting well-defined spin polarized channels. Importantly, these main spin selection effects are shown to be either cooperating or competing, explaining why our transport results were not observed before. Overall, this study unveils a path to harness the full potential of low Resitance.Area (RA) graphene interfaces in efficient spin-based devices.

Combined spin filtering actions in hybrid magnetic junctions based on organic chains covalently attached to graphene

We present a bias-controlled spin-filtering mechanism in spin-valves including a hybrid organic chain/graphene interface. Wet growth conditions of oligomeric molecular chains would usually lead, during standard CMOS-compatible fabrication processes, to the quenching of spintronics properties of metallic spin sources due to oxidation. We demonstrate by X-ray photoelectron spectroscopy that the use of a protective graphene layer fully preserves the metallic character of the ferromagnetic surface and thus its capability to deliver spin polarized currents. We focus here on a small aromatic chain of controllable lengths, formed by nitrobenzene monomers and derived from the commercial 4-nitrobenzene diazonium tetrafluoroborate, covalently attached to the graphene passivated spin sources thanks to electroreduction. A unique bias dependent switch of the spin signal is then observed in complete spin valve devices, from minority to majority spin carriers filtering. First-principles calculations are used to highlight the key role played by the spin-dependent hybridization of electronic states present at the different interfaces. Our work is a first step towards the exploration of spin transport using different functional molecular chains. It opens the perspective of atomic tailoring of magnetic junction devices towards spin and quantum transport control, thanks to the flexibility of ambient electrochemical surface functionalization processes.

Insights and Implications of Intricate Surface Charge Transfer and sp3-Defects in Graphene/Metal Oxide Interfaces

Adherence of metal oxides to graphene is of fundamental significance to graphene nanoelectronic and spintronic interfaces. Titanium oxide and aluminum oxide are two widely used tunnel barriers in such devices, which offer optimum interface resistance and distinct interface conditions that govern transport parameters and device performance. Here, we reveal a fundamental difference in how these metal oxides interface with graphene through electrical transport measurements and Raman and photoelectron spectroscopies, combined with ab initio electronic structure calculations of such interfaces. While both oxide layers cause surface charge transfer induced p-type doping in graphene, in sharp contrast to TiO_x, the AlO_x/graphene interface shows the presence of appreciable sp³ defects. Electronic structure calculations disclose that significant p-type doping occurs due to a combination of sp³ bonds formed between C and O atoms at the interface and possible slightly off-stoichiometric defects of the aluminum oxide layer. Furthermore, the sp³ hybridization at the AlO_x/graphene interface leads to distinct magnetic moments of unsaturated bonds, which not only explicates the widely observed low spin-lifetimes in AlO_x barrier graphene spintronic devices but also suggests possibilities for new hybrid resistive switching and spin valves.

Molecular Compounds in Spintronic Devices: An Intricate Marriage of Chemistry and Physics

Spintronics, a flourishing new field of microelectronics, uses the electron spin for reading and writing information in modern computers and other spintronic devices with a low power consumption and high reliability. In a quest to increase the productivity of such devices, the use of molecular materials as a spacer layer allowed them to perform equally well or even better than conventional all-inorganic heterostructures from metals, alloys, or inorganic semiconductors. In this review, we survey various classes of chemical compounds that have already been tested for this purpose─from organic compounds and coordination complexes to organic-inorganic hybrid materials─since the creation of the first molecule-based spintronic device in 2002. Although each class has its advantages, drawbacks, and applications in molecular spintronics, together they allowed nonchemists to gain insights into spin-related effects and to propose new concepts in the design and fabrication of highly efficient spintronic devices. Other molecular compounds that chemistry could offer in great numbers may soon emerge as suitable spacers or even electrodes in flexible magnetic field sensors, nonvolatile memories, and multifunctional spintronic devices.

Two-dimensional materials prospects for non-volatile spintronic memories

Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments and challenges in regard to MRAM, and then outline the opportunities that can arise by incorporating two-dimensional material technologies. We highlight the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes.

The Magnetic Genome of Two-Dimensional van der Waals Materials

Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

Recent Progress of Atomic Layer Technology in Spintronics: Mechanism, Materials and Prospects

The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic layer deposition (ALD) and atomic layer etching (ALE). To begin, we introduce the main atomic layer deposition techniques. Then, in a brief review, we discuss ALE technology for insulators, semiconductors, metals, and newly created two-dimensional van der Waals materials. Additionally, we compare the critical factors learned from ALD to constructing ALE technology. Finally, we discuss the future prospects and challenges of atomic layer technology in the field of spinronics.

Corrosion Resistance of Ultrathin Two-Dimensional Coatings: First-Principles Calculations towards In-Depth Mechanism Understanding and Precise Material Design

In recent years, ultrathin two-dimensional (2D) coatings, e.g., graphene (Gr) and hexagonal boron nitride (h-BN), are intriguing research foci in the field of anticorrosion because their high air stability, excellent impermeability, high optical transparency, and atomistic thickness have endowed them with attractive anticorrosion applications. The microstructure of 2D coatings, coating–substrate interactions, and properties of 2D coatings on substrates in a variety of environmental conditions (e.g., at different temperatures, stresses, and pH values) are the key factors governing the anticorrosion performance of 2D coatings and are among the central topics for all 2D-coating studies. For many conventional experimental measurements (e.g., microscopy and electrochemical methods), there exist challenges to acquire detailed information on the atomistic mechanisms for the involved subnanometer scale corrosion problems. Alternatively, as a precise and efficient quantum-mechanical simulation approach, the first-principles calculation based on density-functional theory (DFT) has become a powerful way to study the thermodynamic and kinetic properties of materials on the atomic scale, as well as to clearly reveal the underlying microscopic mechanisms. In this review, we introduce the anticorrosion performance, existing problems, and optimization ways of Gr and h-BN coatings and summarize important recent DFT results on the critical and complex roles of coating defects and coating–substrate interfaces in governing their corrosion resistance. These DFT progresses have shed much light on the optimization ways towards better anticorrosion 2D coatings and also guided us to make a prospect on the further development directions and promising design schemes for superior anticorrosion ultrathin 2D coatings in the future.

Quantum Plasmonics: Energy Transport Through Plasmonic Gap

At the interfaces of metal and dielectric materials, strong light-matter interactions excite surface plasmons; this allows electromagnetic field confinement and enhancement on the sub-wavelength scale. Such phenomena have attracted considerable interest in the field of exotic material-based nanophotonic research, with potential applications including nonlinear spectroscopies, information processing, single-molecule sensing, organic-molecule devices, and plasmon chemistry. These innovative plasmonics-based technologies can meet the ever-increasing demands for speed and capacity in nanoscale devices, offering ultrasensitive detection capabilities and low-power operations. Size scaling from the nanometer to sub-nanometer ranges is consistently researched; as a result, the quantum behavior of localized surface plasmons, as well as those of matter, nonlocality, and quantum electron tunneling is investigated using an innovative nanofabrication and chemical functionalization approach, thereby opening a new era of quantum plasmonics. This new field enables the ultimate miniaturization of photonic components and provides extreme limits on light-matter interactions, permitting energy transport across the extremely small plasmonic gap. In this review, a comprehensive overview of the recent developments of quantum plasmonic resonators with particular focus on novel materials is presented. By exploring the novel gap materials in quantum regime, the potential quantum technology applications are also searched for and mapped out.

High Tunneling Magnetoresistance in Magnetic Tunnel Junctions with Subnanometer Thick Al2O3 Tunnel Barriers Fabricated Using Atomic Layer Deposition

Pinhole-free and defect-free ultrathin dielectric tunnel barriers (TBs) are a key to obtaining high-tunneling magnetoresistance (TMR) and efficient switching in magnetic tunnel junctions (MTJs). Among others, atomic layer deposition (ALD) provides a unique approach for the fabrication of ultrathin TBs with several advantages including atomic-scale control over the TB thickness, conformal coating, and a low defect density. Motivated by this, this work explores the fabrication and characterization of spin-valve Fe/ALD-Al₂O₃/Fe MTJs with an ALD-Al₂O₃ TB thickness of 0.55 nm using in situ ALD. Remarkably, high TMR values of ∼77 and ∼90% have been obtained, respectively, at room temperature and at 100 K, which are comparable to the best reported values on MTJs having thermal AlO_x TBs with optimized device structures. In situ scanning tunneling spectroscopy characterization of the ALD-Al₂O₃ TBs has revealed a higher TB height (E_b) of 1.33 ± 0.06 eV, in contrast to E_b ∼ 0.3-0.6 eV for their AlO_x TB counterparts, indicative of significantly lower defect concentrations in the former. This first success of the MTJs with subnanometer thick ALD-Al₂O₃ TBs demonstrates the feasibility of in situ ALD for the fabrication of pinhole-free and low-defect ultrathin TBs for practical applications, and the performance could be further improved through device optimization.

Synthesis of emerging 2D layered magnetic materials

van der Waals atomically thin magnetic materials have been recently discovered. They have attracted enormous attention as they present unique magnetic properties, holding potential to tailor spin-based device properties and enable next generation data storage and communication devices. To fully understand the magnetism in two-dimensions, the synthesis of 2D materials over large areas with precise thickness control has to be accomplished. Here, we review the recent advancements in the synthesis of these materials spanning from metal halides, transition metal dichalcogenides, metal phosphosulphides, to ternary metal tellurides. We initially discuss the emerging device concepts based on magnetic van der Waals materials including what has been achieved with graphene. We then review the state of the art of the synthesis of these materials and we discuss the potential routes to achieve the synthesis of wafer-scale atomically thin magnetic materials. We discuss the synthetic achievements in relation to the structural characteristics of the materials and we scrutinise the physical properties of the precursors in relation to the synthesis conditions. We highlight the challenges related to the synthesis of 2D magnets and we provide a perspective for possible advancement of available synthesis methods to respond to the need for scalable production and high materials quality.

Spin filtering by proximity effects at hybridized interfaces in spin-valves with 2D graphene barriers

We report on spin transport in state-of-the-art epitaxial monolayer graphene based 2D-magnetic tunnel junctions (2D-MTJs). In our measurements, supported by ab-initio calculations, the strength of interaction between ferromagnetic electrodes and graphene monolayers is shown to fundamentally control the resulting spin signal. In particular, by switching the graphene/ferromagnet interaction, spin transport reveals magneto-resistance signal MR > 80% in junctions with low resistance × area products. Descriptions based only on a simple K-point filtering picture (i.e. MR increase with the number of layers) are not sufficient to predict the behavior of our devices. We emphasize that hybridization effects need to be taken into account to fully grasp the spin properties (such as spin dependent density of states) when 2D materials are used as ultimately thin interfaces. While this is only a first demonstration, we thus introduce the fruitful potential of spin manipulation by proximity effect at the hybridized 2D material / ferromagnet interface for 2D-MTJs.

Spintronics in Two-Dimensional Materials

Spintronics, exploiting the spin degree of electrons as the information vector, is an attractive field for implementing the beyond Complemetary metal-oxide-semiconductor (CMOS) devices. Recently, two-dimensional (2D) materials have been drawing tremendous attention in spintronics owing to their distinctive spin-dependent properties, such as the ultra-long spin relaxation time of graphene and the spin-valley locking of transition metal dichalcogenides. Moreover, the related heterostructures provide an unprecedented probability of combining the different characteristics via proximity effect, which could remedy the limitation of individual 2D materials. Hence, the proximity engineering has been growing extremely fast and has made significant achievements in the spin injection and manipulation. Nevertheless, there are still challenges toward practical application; for example, the mechanism of spin relaxation in 2D materials is unclear, and the high-efficiency spin gating is not yet achieved. In this review, we focus on 2D materials and related heterostructures to systematically summarize the progress of the spin injection, transport, manipulation, and application for information storage and processing. We also highlight the current challenges and future perspectives on the studies of spintronic devices based on 2D materials.

Band-Structure Spin-Filtering in Vertical Spin Valves Based on Chemical Vapor Deposited WS2

We report on spin transport in WS₂-based 2D-magnetic tunnel junctions (2D-MTJs), unveiling a band structure spin filtering effect specific to the transition metal dichalcogenides (TMDCs) family. WS₂ mono-, bi-, and trilayers are derived by a chemical vapor deposition process and further characterized by Raman spectroscopy, atomic force microscopy (AFM), and photoluminescence spectroscopy. The WS₂ layers are then integrated in complete Co/Al₂O₃/WS₂/Co MTJ hybrid spin-valve structures. We make use of a tunnel Co/Al₂O₃ spin analyzer to probe the extracted spin-polarized current from the WS₂/Co interface and its evolution as a function of WS₂ layer thicknesses. For monolayer WS₂, our technological approach enables the extraction of the largest spin signal reported for a TMDC-based spin valve, corresponding to a spin polarization of P_Co/WS2 = 12%. Interestingly, for bi- and trilayer WS₂, the spin signal is reversed, which indicates a switch in the mechanism of interfacial spin extraction. With the support of ab initio calculations, we propose a model to address the experimentally measured inversion of the spin polarization based on the change in the WS₂ band structure while going from monolayer (direct bandgap) to bilayer (indirect bandgap). These experiments illustrate the rich potential of the families of semiconducting 2D materials for the control of spin currents in 2D-MTJs.

Guidelines for Selecting Interlayer Spacers in Synthetic 2D-Based Antiferromagnets from First-Principles Simulations

Following the recent synthesis of graphene-based antiferromagnetic ultrathin heterostructures made of Co and Fe, we analyse the effect of the spacer between both ferromagnetic materials. Using density functional calculations, we carried out an exhaustive study of the geometric, electronic and magnetic properties for intercalated single Co MLs on top of Ir(111) coupled to monolayered Fe through n graphene layers (n = 1, 2, 3) or monolayered h-BN. Different local atomic arrangements have been considered to model the Moiré patterns expected in these heterostructures. The magnetic exchange interactions between both ferromagnets ( J C o - F e ) are computed from explicit calculations of parallel and anti-parallel Fe/Co inter-layer alignments, and discussed in the context of recent experiments. Our analysis confirms that the robust antiferromagnetic superexchange-coupling between Fe and Co layers is mediated by the graphene spacer through the hybridization of C's p z orbitals with Fe and Co's 3d states. The hybridization is substantially suppressed for multilayered graphene spacers, for which the magnetic coupling between ferromagnets is critically reduced, suggesting the need for ultrathin (monolayer) spacers in the design of synthetic graphene-based antiferromagnets. In the case of h-BN, p z orbitals also mediate d(Fe/Co) coupling. However, there is a larger contribution of local ferromagnetic interactions. Magnetic anisotropy energies were also calculated using a fully relativistic description, and show out-of-plane easy axis for all the configurations, with remarkable net values in the range from 1 to 4 meV.

Effect of Al2O3 Seed-Layer on the Dielectric and Electrical Properties of Ultrathin MgO Films Fabricated Using In Situ Atomic Layer Deposition

Metal/insulator/metal (M/I/M) trilayers of Al/MgO/Al with ultrathin MgO in the thickness range of 2.20-4.40 nm were fabricated using in vacuo sputtering and atomic layer deposition (ALD). In order to achieve a high-quality metal/insulator (M/I) interface and hence high-quality dielectric ALD-MgO films, a 5 cycles (∼0.55 nm) thick ALD-Al₂O₃ seed layer (SL) was employed to demonstrate the dielectric constant (ε_r) is ∼8.82-9.38 in 3.30-4.95 nm thick ALD-MgO/SL films, which is close to that of single-crystal MgO ε_r ∼ 9.80. In contrast, a low ε_r of 3.55-4.66 for the ALD-MgO films of a similar thickness without a SL was observed. The effective oxide thickness (EOT) of ∼1.40 nm has therefore been achieved in the ultrathin ALD-MgO films, which are comparable to the EOTs of high-K dielectrics such as HfO₂. In addition, the leakage current through the M/I/M structure is reduced by more than 1 order of magnitude with implementation of the SL. The high leakage current in the samples without a SL can be attributed to the nonuniform nucleation of the ALD-MgO on the Al surface with a significant portion of the Al surface remaining conductive as confirmed using in vacuo scanning tunneling spectroscopy (STS). With the SL, the STS study has confirmed a tunnel barrier height of 1.50 eV on 0.55 nm MgO with 0.55 nm Al₂O₃ SL with almost 100% coverage. In addition, molecular dynamics simulations point out the importance of deposition of ultrathin SL that has a significant effect on the initial nucleation of the Mg precursor. This result not only illustrates the critical importance of controlling the M/I interface to obtain high-quality dielectric properties of ultrathin ALD films but also provides an approach to engineering incompatible M/I interfaces using a SL for a high-quality dielectric required for applications in M/I/M tunnel junctions and complementary metal oxide semiconductors.

Nonvolatile Memories Based on Graphene and Related 2D Materials

The pervasiveness of information technologies is generating an impressive amount of data, which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads into high-capacity storage to replace hard disk drives, fuelling the expansion of the global storage memory market. As silicon-based flash memories are approaching their fundamental limit, vertical stacking of multiple memory cell layers, innovative device concepts, and novel materials are being investigated. In this context, emerging 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous, offer a host of physical and chemical properties, which could both improve existing memory technologies and enable the next generation of low-cost, flexible, and wearable storage devices. Herein, an overview of graphene and related 2D materials (GRMs) in different types of NVM cells is provided, including resistive random-access, flash, magnetic and phase-change memories. The physical and chemical mechanisms underlying the switching of GRM-based memory devices studied in the last decade are discussed. Although at this stage most of the proof-of-concept devices investigated do not compete with state-of-the-art devices, a number of promising technological advancements have emerged. Here, the most relevant material properties and device structures are analyzed, emphasizing opportunities and challenges toward the realization of practical NVM devices.

High growth per cycle thermal atomic layer deposition of Ni films using an electron-rich precursor

An efficient process for thermal atomic layer deposition (ALD) of Ni film with high growth per cycle (GPC) value is developed in this study using an electron-rich compound (N,N,N',N'-tetramethylethylenediamine) (bis(2,4-pentanedionato)) nickel(ii) and anhydrous hydrazine as the reactants. The thermal properties and adsorption behavior of selected compounds were studied. Significantly, a high film GPC value of 2.1 Å per cycle for ALD was achieved, and the deposited film exhibited high purity, low resistivity and a smooth surface. We believe that such an efficient method for high GPC thermal ALD of Ni and even other transition metals will benefit ALD technology development.

Modulating and probing the dynamic intermolecular interactions in plasmonic molecule-pair junctions

The intermolecular interactions, including hydrogen bonds, are electromechanically modulated and probed in metal–molecule pair–metal junctions.

Spontaneous growth of 2D coordination polymers on functionalized ferromagnetic surfaces

2D coordination polymers grow spontaneously on reactive surfaces due to surface oxidation. The growth process is observed in real time.

The spontaneous growth of lamellar metal-alkanethiolates (LMAs) on reactive ferromagnetic surfaces as a result of surface oxidation has been observed. When alkanethiol self-assembled monolayers (SAMs) grown under an inert atmosphere over cobalt or permalloy (Ni₈₀Fe₂₀) are exposed to air, oxygen diffuses through the molecular layer. This induces an oxidation of metal atoms at the metal surface and a release of the resulting metal cations that migrate coordinated by the alkanethiol molecules to form lamellar structures over the SAMs. This process has been imaged in real-time, under ambient conditions, by means of different microscopy techniques. The influence of the alkyl chain length, the nature of the ferromagnet, the temperature and the atmospheric moisture on the number, area and height of the resulting features has been systematically evaluated. Remarkably, the possibility to follow the migration in real-time makes it a promising model system for the study of surface/molecule interface processes. Most importantly, the composition and crystallinity of these LMAs have been studied, evidencing that real 2D coordination polymers are formed on the surface. Hence, one could envision this strategy as a new method for the assembly of more complex low-dimensional (2D) magnetic materials based on coordination polymers.

Full imitation of synaptic metaplasticity based on memristor devices

Neuromorphic engineering is a promising technology for developing new computing systems owing to the low-power operation and the massive parallelism similarity to the human brain. Optimal function of neuronal networks requires interplay between rapid forms of Hebbian plasticity and homeostatic mechanisms that adjust the threshold for plasticity, termed metaplasticity. Metaplasticity has important implications in synapses and is barely addressed in neuromorphic devices. An understanding of metaplasticity might yield new insights into how the modification of synapses is regulated and how information is stored by synapses in the brain. Here, we propose a method to imitate the metaplasticity inhibition of long-term potentiation (MILTP) for the first time based on memristors. In addition, the metaplasticity facilitation of long-term potentiation (MFLTP) and the metaplasticity facilitation of long-term depression (MFLTD) are also achieved. Moreover, the mechanisms of metaplasticity in memristors are discussed. Additionally, the proposed method to mimic the metaplasticity is verified by three different memristor devices including oxide-based resistive memory (OxRAM), interface switching random access memory, and conductive bridging random access memory (CBRAM). This is a further step toward developing fully bio-realistic artificial synapses using memristors. The findings in this study will deepen our understanding of metaplasticity, as well as provide new insight into bio-realistic neuromorphic engineering.

A Study of Vertical Transport through Graphene toward Control of Quantum Tunneling

Vertical integration of van der Waals (vdW) materials with atomic precision is an intriguing possibility brought forward by these two-dimensional (2D) materials. Essential to the design and analysis of these structures is a fundamental understanding of the vertical transport of charge carriers into and across vdW materials, yet little has been done in this area. In this report, we explore the important roles of single layer graphene in the vertical tunneling process as a tunneling barrier. Although a semimetal in the lateral lattice plane, graphene together with the vdW gap act as a tunneling barrier that is nearly transparent to the vertically tunneling electrons due to its atomic thickness and the transverse momenta mismatch between the injected electrons and the graphene band structure. This is accentuated using electron tunneling spectroscopy (ETS) showing a lack of features corresponding to the Dirac cone band structure. Meanwhile, the graphene acts as a lateral conductor through which the potential and charge distribution across the tunneling barrier can be tuned. These unique properties make graphene an excellent 2D atomic grid, transparent to charge carriers, and yet can control the carrier flux via the electrical potential. A new model on the quantum capacitance's effect on vertical tunneling is developed to further elucidate the role of graphene in modulating the tunneling process. This work may serve as a general guideline for the design and analysis of vdW vertical tunneling devices and heterostructures, as well as the study of electron/spin injection through and into vdW materials.

Synthesis, characterization, and thermal properties of cobalt(ii) compounds with guanidinate ligands

The synthesis, characterization, and thermal properties of cobalt(ii) compounds with guanidinate ligands and their potential as CVD precursors are reported.

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al₂O₃ film onto SiO₂ that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

Effect of an Interfacial Layer on Electron Tunneling through Atomically Thin Al2O3 Tunnel Barriers

Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al₂O₃ dielectric films of 1-6 Å's in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate IL formation, in situ high vacuum sputtering atomic layer deposition (ALD) to synthesize Al₂O₃ on Al films, and in situ ultrahigh vacuum scanning tunneling spectroscopy to probe the electron tunneling through the Al₂O₃. The IL had a profound effect on electron tunneling. We observed a reduced tunnel barrier height and soft-type dielectric breakdown which indicate that defects are present in both the IL and in the Al₂O₃. The IL forms primarily due to exposure of the Al to trace O₂ and/or H₂O during the pre-ALD heating step of fabrication. As the IL was systematically reduced, by controlling the pre-ALD sample heating, we observed an increase of the ALD Al₂O₃ barrier height from 0.9 to 1.5 eV along with a transition from soft to hard dielectric breakdown. This work represents a key step toward the realization of high-quality, atomically thin dielectrics with electron tunneling for the next generation of microelectronics.

Low temperature growth of fully covered single-layer graphene using a CoCu catalyst

A bimetallic CoCu alloy thin-film catalyst is developed that enables the growth of uniform, high-quality graphene at 750 °C in 3 min by chemical vapour deposition. The growth outcome is found to vary significantly as the Cu concentration is varied, with ∼1 at% Cu added to Co yielding complete coverage single-layer graphene growth for the conditions used. The suppression of multilayer formation is attributable to Cu decoration of high reactivity sites on the Co surface which otherwise serve as preferential nucleation sites for multilayer graphene. X-ray photoemission spectroscopy shows that Co and Cu form an alloy at high temperatures, which has a drastically lower carbon solubility, as determined by using the calculated Co-Cu-C ternary phase diagram. Raman spectroscopy confirms the high quality (I_D/I_G < 0.05) and spatial uniformity of the single-layer graphene. The rational design of a bimetallic catalyst highlights the potential of catalyst alloying for producing two-dimensional materials with tailored properties.

From Growth Surface to Device Interface: Preserving Metallic Fe under Monolayer Hexagonal Boron Nitride

We investigate the interfacial chemistry between Fe catalyst foils and monolayer hexagonal boron nitride (h-BN) following chemical vapor deposition and during subsequent atmospheric exposure, using scanning electron microscopy, X-ray photoemission spectroscopy, and scanning photoelectron microscopy. We show that regions of the Fe surface covered by h-BN remain in a metallic state during exposure to moist air for ∼40 h at room temperature. This protection is attributed to the strong interfacial interaction between h-BN and Fe, which prevents the rapid intercalation of oxidizing species. Local Fe oxidation is observed on bare Fe regions and close to defects in the h-BN film (e.g., domain boundaries, wrinkles, and edges), which over the longer-term provide pathways for slow bulk oxidation of Fe. We further confirm that the interface between h-BN and metallic Fe can be recovered by vacuum annealing at ∼600 °C, although this is accompanied by the creation of defects within the h-BN film. We discuss the importance of these findings in the context of integrated manufacturing and transfer-free device integration of h-BN, particularly for technologically important applications where h-BN has potential as a tunnel barrier such as magnetic tunnel junctions.

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS₂) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS₂ (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS₂ spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

Activating the molecular spinterface

The miniaturization trend in the semiconductor industry has led to the understanding that interfacial properties are crucial for device behaviour. Spintronics has not been alien to this trend, and phenomena such as preferential spin tunnelling, the spin-to-charge conversion due to the Rashba-Edelstein effect and the spin-momentum locking at the surface of topological insulators have arisen mainly from emergent interfacial properties, rather than the bulk of the constituent materials. In this Perspective we explore inorganic/molecular interfaces by looking closely at both sides of the interface. We describe recent developments and discuss the interface as an ideal platform for creating new spin effects. Finally, we outline possible technologies that can be generated thanks to the unique active tunability of molecular spinterfaces.

Extrinsic Cation Selectivity of 2D Membranes

From a systematic study of the concentration driven diffusion of positive and negative ions across porous 2D membranes of graphene and hexagonal boron nitride (h-BN), we prove their cation selectivity. Using the current-voltage characteristics of graphene and h-BN monolayers separating reservoirs of different salt concentrations, we calculate the reversal potential as a measure of selectivity. We tune the Debye screening length by exchanging the salt concentrations and demonstrate that negative surface charge gives rise to cation selectivity. Surprisingly, h-BN and graphene membranes show similar characteristics, strongly suggesting a common origin of selectivity in aqueous solvents. For the first time, we demonstrate that the cation flux can be increased by using ozone to create additional pores in graphene while maintaining excellent selectivity. We discuss opportunities to exploit our scalable method to use 2D membranes for applications including osmotic power conversion.

Parameter Space of Atomic Layer Deposition of Ultrathin Oxides on Graphene

Atomic layer deposition (ALD) of ultrathin aluminum oxide (AlO_x) films was systematically studied on supported chemical vapor deposition (CVD) graphene. We show that by extending the precursor residence time, using either a multiple-pulse sequence or a soaking period, ultrathin continuous AlO_x films can be achieved directly on graphene using standard H₂O and trimethylaluminum (TMA) precursors even at a high deposition temperature of 200 °C, without the use of surfactants or other additional graphene surface modifications. To obtain conformal nucleation, a precursor residence time of >2s is needed, which is not prohibitively long but sufficient to account for the slow adsorption kinetics of the graphene surface. In contrast, a shorter residence time results in heterogeneous nucleation that is preferential to defect/selective sites on the graphene. These findings demonstrate that careful control of the ALD parameter space is imperative in governing the nucleation behavior of AlO_x on CVD graphene. We consider our results to have model system character for rational two-dimensional (2D)/non-2D material process integration, relevant also to the interfacing and device integration of the many other emerging 2D materials.

Proximity-Induced Spin Polarization of Graphene in Contact with Half-Metallic Manganite

The role of proximity contact with magnetic oxides is of particular interest from the expectations of the induced spin polarization and weak interactions at the graphene/magnetic oxide interfaces, which would allow us to achieve efficient spin-polarized injection in graphene-based spintronic devices. A combined approach of topmost-surface-sensitive spectroscopy utilizing spin-polarized metastable He atoms and ab initio calculations provides us direct evidence for the magnetic proximity effect in the junctions of single-layer graphene and half-metallic manganite La0.7Sr0.3MnO3 (LSMO). It is successfully demonstrated that in the graphene/LSMO junctions a sizable spin polarization is induced at the Fermi level of graphene in parallel to the spin polarization direction of LSMO without giving rise to a significant modification in the π band structure.

Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene

The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems.

Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a ‘giant’ resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields.

Musical molecules: the molecular junction as an active component in audio distortion circuits

Molecular junctions that have a non-linear current-voltage characteristic consistent with quantum mechanical tunneling are demonstrated as analog audio clipping elements in overdrive circuits widely used in electronic music, particularly with electric guitars. The performance of large-area molecular junctions fabricated at the wafer level is compared to currently standard semiconductor diode clippers, showing a difference in the sound character. The harmonic distributions resulting from the use of traditional and molecular clipping elements are reported and discussed, and differences in performance are noted that result from the underlying physics that controls the electronic properties of each clipping component. In addition, the ability to tune the sound using the molecular junction is demonstrated. Finally, the hybrid circuit is compared to an overdriven tube amplifier, which has been the standard reference electric guitar clipped tone for over 60 years. In order to investigate the feasibility of manufacturing molecular junctions for use in commercial applications, devices are fabricated using a low-density format at the wafer level, where 38 dies per wafer, each containing two molecular junctions, are made with exceptional non-shorted yield (99.4%, representing 718 out of 722 tested devices) without requiring clean room facilities.

Towards a general growth model for graphene CVD on transition metal catalysts

The chemical vapour deposition (CVD) of graphene on three polycrystalline transition metal catalysts, Co, Ni and Cu, is systematically compared and a first-order growth model is proposed which can serve as a reference to optimize graphene growth on any elemental or alloy catalyst system. Simple thermodynamic considerations of carbon solubility are insufficient to capture even basic growth behaviour on these most commonly used catalyst materials, and it is shown that kinetic aspects such as carbon permeation have to be taken into account. Key CVD process parameters are discussed in this context and the results are anticipated to be highly useful for the design of future strategies for integrated graphene manufacture.

Controlled Phase and Tunable Magnetism in Ordered Iron Oxide Nanotube Arrays Prepared by Atomic Layer Deposition

Highly-ordered and conformal iron oxide nanotube arrays on an atomic scale are successfully prepared by atomic layer deposition (ALD) with controlled oxidization states and tunable magnetic properties between superparamagnetism and ferrimagnetism. Non-magnetic α-Fe₂O₃ and superparamagnetic Fe₃O₄ with a blocking temperature of 120 K are in-situ obtained by finely controlling the oxidation reaction. Both of them exhibit a very small grain size of only several nanometers due to the nature of atom-by-atom growth of the ALD technique. Post-annealing α-Fe₂O₃ in a reducing atmosphere leads to the formation of the spinel Fe₃O₄ phase which displays a distinct ferrimagnetic anisotropy and the Verwey metal-insulator transition that usually takes place only in single crystal magnetite or thick epitaxial films at low temperatures. The ALD deposition of iron oxide with well-controlled phase and tunable magnetism demonstrated in this work provides a promising opportunity for the fabrication of 3D nano-devices to be used in catalysis, spintronics, microelectronics, data storages and bio-applications.

Anatomy and Giant Enhancement of the Perpendicular Magnetic Anisotropy of Cobalt-Graphene Heterostructures

We report strongly enhanced perpendicular magnetic anisotropy (PMA) of Co films by graphene coating from both first-principles and experiments. Our calculations show that graphene can dramatically boost the surface anisotropy of Co films up to twice the value of its pristine counterpart and can extend the out-of-plane effective anisotropy up to unprecedented thickness of 25 Å. These findings are supported by our experiments on graphene coating on Co films grown on Ir substrate. Furthermore, we report layer-resolved and orbital-hybridization-resolved anisotropy analysis, which help understanding of the physical mechanisms of PMA and more practically can help design structures with giant PMA. As an example, we propose superexchange stabilized Co-graphene heterostructures with a robust constant effective PMA and linearly increasing interfacial anisotropy as a function of film thickness. These findings point toward possibilities to engineer graphene/ferromagnetic metal heterostructures with giant magnetic anisotropy more than 20-times larger compared to conventional multilayers, which constitutes a hallmark for future graphene and traditional spintronic technologies.

Long-Term Passivation of Strongly Interacting Metals with Single-Layer Graphene

The long-term (>18 months) protection of Ni surfaces against oxidation under atmospheric conditions is demonstrated by coverage with single-layer graphene, formed by chemical vapor deposition. In situ, depth-resolved X-ray photoelectron spectroscopy of various graphene-coated transition metals reveals that a strong graphene-metal interaction is of key importance in achieving this long-term protection. This strong interaction prevents the rapid intercalation of oxidizing species at the graphene-metal interface and thus suppresses oxidation of the substrate surface. Furthermore, the ability of the substrate to locally form a passivating oxide close to defects or damaged regions in the graphene overlayer is critical in plugging these defects and preventing oxidation from proceeding through the bulk of the substrate. We thus provide a clear rationale for understanding the extent to which two-dimensional materials can protect different substrates and highlight the key implications for applications of these materials as barrier layers to prevent oxidation.

In Situ Observation of Initial Stage in Dielectric Growth and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces

Several proposed beyond-CMOS devices based on two-dimensional (2D) heterostructures require the deposition of thin dielectrics between 2D layers. However, the direct deposition of dielectrics on 2D materials is challenging due to their inert surface chemistry. To deposit high-quality, thin dielectrics on 2D materials, a flat lying titanyl phthalocyanine (TiOPc) monolayer, deposited via the molecular beam epitaxy, was employed to create a seed layer for atomic layer deposition (ALD) on 2D materials, and the initial stage of growth was probed using in situ STM. ALD pulses of trimethyl aluminum (TMA) and H2O resulted in the uniform deposition of AlOx on the TiOPc/HOPG. The uniformity of the dielectric is consistent with DFT calculations showing multiple reaction sites are available on the TiOPc molecule for reaction with TMA. Capacitors prepared with 50 cycles of AlOx on TiOPc/graphene display a capacitance greater than 1000 nF/cm(2), and dual-gated devices have current densities of 10(-7)A/cm(2) with 40 cycles.

Bilayer insulator tunnel barriers for graphene-based vertical hot-electron transistors

Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in the literature for applications in electronics and optoelectronics. In this work, the carrier transport mechanisms in semiconductor-insulator-graphene (SIG) capacitors are investigated with respect to their suitability as electron emitters in vertical graphene base transistors (GBTs). Several dielectric materials as tunnel barriers are compared, including dielectric double layers. Using bilayer dielectrics, we experimentally demonstrate significant improvements in the electron injection current by promoting Fowler-Nordheim tunneling (FNT) and step tunneling (ST) while suppressing defect mediated carrier transport. High injected tunneling current densities approaching 10(3) A cm(-2) (limited by series resistance), and excellent current-voltage nonlinearity and asymmetry are achieved using a 1 nm thick high quality dielectric, thulium silicate (TmSiO), as the first insulator layer, and titanium dioxide (TiO2) as a high electron affinity second layer insulator. We also confirm the feasibility and effectiveness of our approach in a full GBT structure which shows dramatic improvement in the collector on-state current density with respect to the previously reported GBTs. The device design and the fabrication scheme have been selected with future CMOS process compatibility in mind. This work proposes a bilayer tunnel barrier approach as a promising candidate to be used in high performance vertical graphene-based tunneling devices.

CVD-Enabled Graphene Manufacture and Technology

Integrated manufacturing is arguably the most challenging task in the development of technology based on graphene and other 2D materials, particularly with regard to the industrial demand for “electronic-grade” large-area films. In order to control the structure and properties of these materials at the monolayer level, their nucleation, growth and interfacing needs to be understood to a level of unprecedented detail compared to existing thin film or bulk materials. Chemical vapor deposition (CVD) has emerged as the most versatile and promising technique to develop graphene and 2D material films into industrial device materials and this Perspective outlines recent progress, trends, and emerging CVD processing pathways. A key focus is the emerging understanding of the underlying growth mechanisms, in particular on the role of the required catalytic growth substrate, which brings together the latest progress in the fields of heterogeneous catalysis and classic crystal/thin-film growth.