A universal, rapid method for clean transfer of nanostructures onto various substrates

Clean Transfer of Two-Dimensional Materials: A Comprehensive Review

The growth of two-dimensional (2D) materials through chemical vapor deposition (CVD) has sparked a growing interest among both the industrial and academic communities. The interest stems from several key advantages associated with CVD, including high yield, high quality, and high tunability. In order to harness the application potentials of 2D materials, it is often necessary to transfer them from their growth substrates to their desired target substrates. However, conventional transfer methods introduce contamination that can adversely affect the quality and properties of the transferred 2D materials, thus limiting their overall application performance. This review presents a comprehensive summary of the current clean transfer methods for 2D materials with a specific focus on the understanding of interaction between supporting layers and 2D materials. The review encompasses various aspects, including clean transfer methods, post-transfer cleaning techniques, and cleanliness assessment. Furthermore, it analyzes and compares the advances and limitations of these clean transfer techniques. Finally, the review highlights the primary challenges associated with current clean transfer methods and provides an outlook on future prospects.

Toward Clean 2D Materials and Devices: Recent Progress in Transfer and Cleaning Methods

Two-dimensional (2D) materials have tremendous potential to revolutionize the field of electronics and photonics. Unlocking such potential, however, is hampered by the presence of contaminants that usually impede the performance of 2D materials in devices. This perspective provides an overview of recent efforts to develop clean 2D materials and devices. It begins by discussing conventional and recently developed wet and dry transfer techniques and their effectiveness in maintaining material "cleanliness". Multi-scale methodologies for assessing the cleanliness of 2D material surfaces and interfaces are then reviewed. Finally, recent advances in passive and active cleaning strategies are presented, including the unique self-cleaning mechanism, thermal annealing, and mechanical treatment that rely on self-cleaning in essence. The crucial role of interface wetting in these methods is emphasized, and it is hoped that this understanding can inspire further extension and innovation of efficient transfer and cleaning of 2D materials for practical applications.

Field effect transistor based wearable biosensors for healthcare monitoring

The rapid advancement of wearable biosensors has revolutionized healthcare monitoring by screening in a non-invasive and continuous manner. Among various sensing techniques, field-effect transistor (FET)-based wearable biosensors attract increasing attention due to their advantages such as label-free detection, fast response, easy operation, and capability of integration. This review explores the innovative developments and applications of FET-based wearable biosensors for healthcare monitoring. Beginning with an introduction to the significance of wearable biosensors, the paper gives an overview of structural and operational principles of FETs, providing insights into their diverse classifications. Next, the paper discusses the fabrication methods, semiconductor surface modification techniques and gate surface functionalization strategies. This background lays the foundation for exploring specific FET-based biosensor designs, including enzyme, antibody and nanobody, aptamer, as well as ion-sensitive membrane sensors. Subsequently, the paper investigates the incorporation of FET-based biosensors in monitoring biomarkers present in physiological fluids such as sweat, tears, saliva, and skin interstitial fluid (ISF). Finally, we address challenges, technical issues, and opportunities related to FET-based biosensor applications. This comprehensive review underscores the transformative potential of FET-based wearable biosensors in healthcare monitoring. By offering a multidimensional perspective on device design, fabrication, functionalization and applications, this paper aims to serve as a valuable resource for researchers in the field of biosensing technology and personalized healthcare.

Large-scale and stacked transfer of bilayers MoS2devices on a flexible polyimide substrate

Two-dimensional transition metal dichalcogenides (TMDs), as flexible and stretchable materials, have attracted considerable attention in the field of novel flexible electronics due to their excellent mechanical, optical, and electronic properties. Among the various TMD materials, atomically thin MoS2has become the most widely used material due to its advantageous properties, such as its adjustable bandgap, excellent performance, and ease of preparation. In this work, we demonstrated the practicality of a stacked wafer-scale two-layer MoS2film obtained by transferring multiple single-layer films grown using chemical vapor deposition. The MoS2field-effect transistor cell had a top-gated device structure with a (PI) film as the substrate, which exhibited a high on/off ratio (108), large average mobility (∼8.56 cm2V-1s-1), and exceptional uniformity. Furthermore, a range of flexible integrated logic devices, including inverters, NOR gates, and NAND gates, were successfully implemented via traditional lithography. These results highlight the immense potential of TMD materials, particularly MoS2, in enabling advanced flexible electronic and optoelectronic devices, which pave the way for transformative applications in future-generation electronics.

Manipulation and Characterization of Submillimeter Shearing Contacts in Graphite by the Micro-Dome Technique

Manipulation techniques are the key to measuring fundamental properties of layered materials and their monolayers (2D materials) on the micro- and nanoscale as well as a necessity to the solution of relevant existing challenges. An example is the challenge against upscaling structural superlubricity, a phenomenon of near-zero friction and wear in solid contacts. To date, the largest single structural superlubric contact only has a size of a few tens of micrometers, which is achieved on graphite mesa, a system that has shown microscale superlubricity. The first obstacle against extending the contact size is the lack of suitable manipulation techniques. Here, a micro-dome technique is demonstrated on graphite mesas by shearing contacts 2500 times larger in area than previously possible. With this technique, submillimeter graphite mesas are opened, characterized for the first time, and compared to their microscale counterparts. Interfacial structures, which are possibly related to the failure of superlubricity, are observed: commensurate grains, external steps, and carbon aggregates. Furthermore, a proof-of-concept mechanical model is developed to understand how the micro-dome technique works and to predict its limits. Finally, a dual-axis force measuring device is developed and integrated with the micro-dome technique to measure the normal and lateral forces when shearing submillimeter mesas. These results provide a platform technique for future research on structural superlubricity on different scales and manipulation of structures of layered materials in general.

Fabrication of Eco-Friendly Wearable Strain Sensor Arrays via Facile Contact Printing for Healthcare Applications

Wearable flexible strain sensors with spatial resolution enable the acquisition and analysis of complex actions for noninvasive personalized healthcare applications. To provide secure contact with skin and to avoid environmental pollution after usage, sensors with biocompatibility and biodegradability are highly desirable. Herein, wearable flexible strain sensors composed of crosslinked gold nanoparticle (GNP) thin films as the active conductive layer and transparent biodegradable polyurethane (PU) films as the flexible substrate are developed. The patterned GNP films (micrometer- to millimeter-scale square and rectangle geometry, alphabetic characters, and wave and array patterns) are transferred onto the biodegradable PU film via a facile, clean, rapid and high-precision contact printing method, without the need of a sacrificial polymer carrier or organic solvents. The GNP-PU strain sensor with low Young's modulus (≈17.8 MPa) and high stretchability showed good stability and durability (10 000 cycles) as well as degradability (42% weight loss after 17 days at 74 °C in water). The GNP-PU strain sensor arrays with spatiotemporal strain resolution are applied as wearable eco-friendly electronics for monitoring subtle physiological signals (e.g., mapping of arterial lines and sensing pulse waveforms) and large-strain actions (e.g., finger bending).

Scalable graphene sensor array for real-time toxins monitoring in flowing water

Risk management for drinking water often requires continuous monitoring of various toxins in flowing water. While they can be readily integrated with existing water infrastructure, two-dimensional (2D) electronic sensors often suffer from device-to-device variations due to the lack of an effective strategy for identifying faulty devices from preselected uniform devices based on electronic properties alone, resulting in sensor inaccuracy and thus slowing down their real-world applications. Here, we report the combination of wet transfer, impedance and noise measurements, and machine learning to facilitate the scalable nanofabrication of graphene-based field-effect transistor (GFET) sensor arrays and the efficient identification of faulty devices. Our sensors were able to perform real-time detection of heavy-metal ions (lead and mercury) and E. coli bacteria simultaneously in flowing tap water. This study offers a reliable quality control protocol to increase the potential of electronic sensors for monitoring pollutants in flowing water.

Controlled Adhesion of Ice-Toward Ultraclean 2D Materials

The scalable 2D device fabrication and integration demand either the large-area synthesis or the post-synthesis transfer of 2D layers. While the direct synthesis of 2D materials on most targeted surfaces remains challenging, the transfer approach from the growth substrate onto the targeted surfaces offers an alternative pathway for applications and integrations. However, the current transfer techniques for 2D materials predominantly involve polymers and organic solvents, which are liable to contaminate or deform the ultrasensitive atomic layers. Here, novel ice-aided transfer and ice-stamp transfer methods are developed, in which water (ice) is the only medium in the entire process. In practice, the adhesion between various 2D materials and ice can be well controlled by temperature. Through such controlled adhesion of ice, it is shown that the new transfer methods can yield ultrahigh quality and exceptional cleanliness in transferred 2D flakes and continuous 2D films, and are applicable for a wide range of substrates. Furthermore, beyond transfer, ice can also be used for cleaning the surfaces of 2D materials at higher temperatures. These novel techniques can enable unprecedented ultraclean 2D materials surfaces and performances, and will contribute to the upcoming technological revolutions associated with 2D materials.

Recent Advances in Rolling 2D TMDs Nanosheets into 1D TMDs Nanotubes/Nanoscrolls

Transition metal dichalcogenides (TMDs) van der Waals (vdW) 1D heterostructures are recently synthesized from 2D nanosheets, which open up new opportunities for potential applications in electronic and optoelectronic devices. The most recent and promising strategies in regards to forming 1D TMDs nanotubes (NTs) or nanoscrolls (NSs) in this review article as well as their heterostructures that are produced from 2D TMDs are summarized. In order to improve the functionality of ultrathin 1D TMDs that are coaxially combined with boron nitride nanotubes and single-walled carbon nanotubes. 1D heterostructured devices perform better than 2D TMD nanosheets when the two devices are compared. The photovoltaic effect in WS₂ or MoS₂ NTs without a junction may exceed the Shockley-Queisser limit for the above-band-gap photovoltage generation. Photoelectrochemical hydrogen evolution is accelerated when monolayer WS₂ or MoS₂ NSs are incorporated into a heterojunction. In addition, the photovoltaic performance of the WSe₂ /MoS₂  NSs junction is superior to that of the performance of MoS₂ NSs. The summary of the current research about 1D TMDs can be used in a variety of ways, which assists in the development of new types of nanoscale optoelectronic devices. Finally, it also summarizes the current challenges and prospects.

Interface Influence on the Photoelectric Performance of Transition Metal Dichalcogenide Lateral Heterojunctions

The ultrathin feature of two-dimensional (2D) transition metal dichalcogenides (TMDs) has brought special performance in electronic and optoelectronic fields. When vertical and lateral heterojunctions are made using different TMD combinations, the original properties of premier TMDs can be optimized. Especially for lateral heterojunctions, their sharp interface signifies a narrow space charge region, leading to a strong in-plane built-in electric field, which may contribute to high separation efficiency of photogenerated carriers, good rectification behavior, self-powered photoelectric device construction, etc. However, due to the poor controllability over the synthesis process, obtaining a clean and sharp interface of the lateral heterojunction is still a challenge. Herein, we propose a simple chemical vapor deposition (CVD) method, which can effectively separate the growth process of different TMDs, thus resulting in good regulation of the composition change at the junction region. By this method, MoS₂-WS₂ lateral heterojunctions with sharp interfaces have been obtained with good rectification characteristics, ∼10⁵ on/off ratio, 1874% external quantum efficiency, and ∼120 ms photoresponse speed, exhibiting a better photoelectric performance than that of the lateral ones with graded junctions.

A Capillary-Force-Assisted Transfer for Monolayer Transition-Metal-Dichalcogenide Crystals with High Utilization

The capillary-force-assisted transfer has shown application potential for constructing two-dimensional (2D) electronic and optoelectronic devices for the advantage of free of spin coating the organic compound and etching the substrate. Currently, the transfer mechanism remains obscure. The capillary adhesion mechanism and capillary invasion separation mechanism were proposed independently and rarely discussed in a comprehensive manner. What is more, the integrity and utilization remain to be improved. Here, we developed the capillary-force-assisted transfer method with high utilization and integrity. Uniformity of water transport was improved by introducing water from the sidewall of the small polydimethylsiloxane (PDMS) stamp driven by capillary force. The transfer integrity rate increased, and the location of the complete samples became predictable. The transfer utilization increased as the limited water transportation minimized the impact on the surrounding WS₂. The monolayer triangle WS₂ crystals from adjacent areas on the sapphire substrate were transferred one after another. Besides, local mechanical exfoliation of the continuous WS₂ thin films was demonstrated, implying that the capillary adhesion is strong enough to break the strong in-plane covalent bond and overcome the van der Waals force between WS₂ and sapphire substrate. Finally, the water transport model between two surfaces with different hydrophobicity combinations was derived on the basis of the Young-Laplace equation. The analysis of water transport between different interfaces reveals how capillary adhesion and capillary invasion work together to achieve capillary force transfer. This study highlights the potential of the capillary-force-assisted transfer as an efficient technique for fabricating van der Waals structures based on two-dimensional atomic crystals, especially periodic structures.

Natural p-n Junctions at the MoS2 Flake Edges

Two-dimensional (2D) semiconductors are holding promises as channel materials for field-effect transistors. Compared to traditional three-dimensional (3D) semiconductors whose electronic and optical properties are hindered by dangling bonds and trap states at the surfaces, 2D materials with saturated chemical bonds on the surface maintain the excellent properties even when device thickness scales down to monolayer. However, dangling bonds are unavoidable at their edges, which are often overlooked and should have important effects on the devices. Here, we show that the edges of as-exfoliated and etched MoS₂ are naturally p-type doped and can form p-n junctions with the bulk of the flake. The width of these edge regions is around 20 nm. While their existence could present challenges for the shrinkage of devices, they can be exploited to form rectifying or optoelectronic devices based on a single flake of MoS₂ without the need of an elaborate extrinsic doping process.

Nonequilibrium Phonon Thermal Resistance at MoS2/Oxide and Graphene/Oxide Interfaces

Accurate measurements and physical understanding of thermal boundary resistance (R) of two-dimensional (2D) materials are imperative for effective thermal management of 2D electronics and photonics. In previous studies, heat dissipation from 2D material devices was presumed to be dominated by phonon transport across the interfaces. In this study, we find that, in addition to phonon transport, thermal resistance between nonequilibrium phonons in the 2D materials could play a critical role too when the 2D material devices are internally self-heated, either optically or electrically. We accurately measure the R of oxide/MoS₂/oxide and oxide/graphene/oxide interfaces for three oxides (SiO₂, HfO₂, and Al₂O₃) by differential time-domain thermoreflectance (TDTR). Our measurements of R across these interfaces with external heating are 2-4 times lower than the previously reported R of the similar interfaces measured by Raman thermometry with internal self-heating. Using a simple model, we show that the observed discrepancy can be explained by an additional internal thermal resistance (R_int) between nonequilibrium phonons present during Raman measurements. We subsequently estimate that, for MoS₂ and graphene, R_int ≈ 31 and 22 m² K GW^-1, respectively. The values are comparable to the thermal resistance due to finite phonon transmission across interfaces of 2D materials and thus cannot be ignored in the design of 2D material devices. Moreover, the nonequilibrium phonons also lead to a different temperature dependence than that by phonon transport. As such, our work provides important insights into physical understanding of heat dissipation in 2D material devices.

A van der Waals Integrated Damage-Free Memristor Based on Layered 2D Hexagonal Boron Nitride

2D materials with intriguing properties have been widely used in optoelectronics. However, electronic devices suffered from structural damage due to the ultrathin materials and uncontrolled defects at interfaces upon metallization, which hindered the development of reliable devices. Here, a damage-free Au/h-BN/Au memristor is reported using a clean, water-assisted metal transfer approach by physically assembling Au electrodes onto the layered h-BN which minimized the structural damage and undesired interfacial defects. The memristors demonstrate significantly improved performance with the coexistence of nonpolar and threshold switching as well as tunable current levels by controlling the compliance current, compared with devices with evaporated contacts. The devices integrated into an array show suppressed sneak path current and can work as both logic gates and latches to implement logic operations allowing in-memory computing. Cross-sectional scanning transmission electron microscopy analysis validates the feasibility of this nondestructive metal integration approach, the crucial role of high-quality atomically sharp interface in resistive switching, and a direct observation of percolation path. The underlying mechanism of boron vacancies-assisted transport is further supported experimentally by conductive atomic force microscopy free from process-induced damage, and theoretically by ab initio simulations.

Fabrication Technologies for the On-Chip Integration of 2D Materials

With compact footprint, low energy consumption, high scalability, and mass producibility, chip-scale integrated devices are an indispensable part of modern technological change and development. Recent advances in 2D layered materials with their unique structures and distinctive properties have motivated their on-chip integration, yielding a variety of functional devices with superior performance and new features. To realize integrated devices incorporating 2D materials, it requires a diverse range of device fabrication techniques, which are of fundamental importance to achieve good performance and high reproducibility. This paper reviews the state-of-art fabrication techniques for the on-chip integration of 2D materials. First, an overview of the material properties and on-chip applications of 2D materials is provided. Second, different approaches used for integrating 2D materials on chips are comprehensively reviewed, which are categorized into material synthesis, on-chip transfer, film patterning, and property tuning/modification. Third, the methods for integrating 2D van der Waals heterostructures are also discussed and summarized. Finally, the current challenges and future perspectives are highlighted.

Solvent-Free Preparation of Closely Packed MoS2 Nanoscrolls for Improved Photosensitivity

Due to their enhanced light absorption efficiency, one-dimensional (1D) transition metal dichalcogenide (TMDC) nanoscrolls derived from two-dimensional (2D) TMDC nanosheets have shown excellent optoelectronic properties. Currently, organic solvent and alkaline droplet-assisted scrolling methods are popular for preparing TMDC nanoscrolls. Unfortunately, the adsorption of organic solvent or alkaline impurities on TMDC is inevitable during the preparation, which affects the optoelectronic properties of TMDC. In this work, we report a solvent-free method to prepare closely packed MoS₂ nanoscrolls by dragging a deionized water droplet onto the chemical vapor deposition grown monolayer MoS₂ nanosheets at 100 °C (referred to as MoS₂ NS-W). The as-prepared MoS₂ NS-W was well characterized by optical microscopy, atomic force microscopy, and ultralow frequency (ULF) Raman spectroscopy. After high temperature annealing, the height of MoS₂ nanoscrolls prepared using an ethanol droplet (referred to as MoS₂ NS-E) greatly decreased, indicating the loss of encapsulated ethanol in MoS₂ NS-E. While the height of MoS₂ NS-W was almost unchanged under the same conditions, implying that no water was embedded in the scroll. Compared to the MoS₂ NS-E, the MoS₂ NS-W shows more ULF breathing mode peaks, confirming the stronger interlayer interaction. In addition, the MoS₂ NS-W shows a higher Young's modulus than MoS₂ NS-E, which could arise from the closely packed scroll structure. Importantly, the MoS₂ NS-W device showed a photosensitivity 1 order of magnitude higher than that of the MoS₂ NS-E device under blue, green, and red lasers, respectively. The decreased photosensitivity of MoS₂ NS-E was attributed to the larger dark current, which might be assigned to the adsorbed ethanol between the adjacent layers in MoS₂ NS-E. Our work provides a solvent-free method to prepare closely packed MoS₂ nanoscrolls at large scale and demonstrates their great potential for high-performance optoelectronic devices.

Transfer Printing of Perovskite Whispering Gallery Mode Laser Cavities by Thermal Release Tape

The outstanding optoelectrical properties and high-quality factor of whispering gallery mode perovskite nanocavities make it attractive for applications in small lasers. However, efforts to make lasers with better performance have been hampered by the lack of efficient methods for the synthesis and transfer of perovskite nanocavities on desired substrate at quality required for applications. Here, we report transfer printing of perovskite nanocavities grown by chemical vapor deposition from mica substrate onto SiO₂ substrate. Transferred perovskite nanocavity has an RMS roughness of ~ 1.2 nm and no thermal degradation in thermal release process. We further use femtosecond laser to excite a transferred perovskite nanocavity and measures its quality factor as high as 2580 and a lasing threshold of 27.89 μJ/cm² which is almost unchanged as compared with pristine perovskite nanocavities. This method represents a significant step toward the realization of perovskite nanolasers with smaller sizes and better heat management as well as application in optoelectronic devices.

Two-dimensional van der Waals heterostructures (vdWHs) with band alignment transformation in multi-functional devices

Two-dimensional van der Waals heterostructures (vdWHs) with tunable band alignment have the potential to be benignant in the development of minimal multi-functional and controllable electronics, but they have received little attention thus far. It is crucial to characterize and control the band alignment in semiconducting vdWHs, which determines the electronic and optoelectronic properties. The future success of optoelectronic devices will require improved electronic property control techniques, such as using an external electric field or strain engineering, to change the electronic structures directly. Herein, we review heterostructures fabricated as transition metal dichalcogenides (TMDCs) as one of their constituent monolayers with other notable 2D materials that can transfer from type-II to type-III (type-III > type-II) band alignment when a biaxial strain or electric field is applied.

Two-dimensional van der Waals heterostructures (vdWHs) with tunable band alignment have the potential to be benignant in the development of minimal multi-functional and controllable electronics, but they have received little attention thus far.

Pattern transfer of large-scale thin membranes with controllable self-delamination interface for integrated functional systems

Direct transfer of pre-patterned device-grade nano-to-microscale materials highly benefits many existing and potential, high performance, heterogeneously integrated functional systems over conventional lithography-based microfabrication. We present, in combined theory and experiment, a self-delamination-driven pattern transfer of a single crystalline silicon thin membrane via well-controlled interfacial design in liquid media. This pattern transfer allows the usage of an intermediate or mediator substrate where both front and back sides of a thin membrane are capable of being integrated with standard lithographical processing, thereby achieving deterministic assembly of the thin membrane into a multi-functional system. Implementations of these capabilities are demonstrated in broad variety of applications ranging from electronics to microelectromechanical systems, wetting and filtration, and metamaterials.

Visualizing Band Profiles of Gate-Tunable Junctions in MoS2/WSe2 Heterostructure Transistors

Heterostructure devices based on two-dimensional materials have been under intensive study due to their intriguing electrical and optical properties. One key factor in understanding these devices is their nanometer-scale band profiles, which is challenging to obtain in devices. Here, we use a technique named contact-mode scanning tunneling spectroscopy to directly visualize the band profiles of MoS₂/WSe₂ heterostructure devices at different gate voltages with nanometer resolution. The long-held view of a conventional p-n junction in the MoS₂/WSe₂ heterostructure is reexamined. Due to strong inter- and intralayer charge transfer, the MoS₂ layer in contact with WSe₂ is found to convert from n-type to p-type, and a series of gate-tunable p-n and p-p⁺ junctions are developed in the devices. Highly conductive edges are also discovered which could strongly affect the device properties.

Graphene Transfer: A Physical Perspective

Graphene, synthesized either epitaxially on silicon carbide or via chemical vapor deposition (CVD) on a transition metal, is gathering an increasing amount of interest from industrial and commercial ventures due to its remarkable electronic, mechanical, and thermal properties, as well as the ease with which it can be incorporated into devices. To exploit these superlative properties, it is generally necessary to transfer graphene from its conductive growth substrate to a more appropriate target substrate. In this review, we analyze the literature describing graphene transfer methods developed over the last decade. We present a simple physical model of the adhesion of graphene to its substrate, and we use this model to organize the various graphene transfer techniques by how they tackle the problem of modulating the adhesion energy between graphene and its substrate. We consider the challenges inherent in both delamination of graphene from its original substrate as well as relamination of graphene onto its target substrate, and we show how our simple model can rationalize various transfer strategies to mitigate these challenges and overcome the introduction of impurities and defects into the graphene. Our analysis of graphene transfer strategies concludes with a suggestion of possible future directions for the field.

Transfer Printing of Freestanding Nanoassemblies: A Route to Membrane Resonators with Adjustable Prestress

Freestanding nanoassemblies represent a new class of functional materials with highly responsive optical, electrical, and mechanical properties. Hence, they are well-suited for applications in advanced sensor devices. Here, it is shown that transfer printing enables the well-controlled fabrication of freestanding membranes from layered nanoassemblies: Using a polydimethylsiloxane (PDMS) stamp, thin films (thickness: ∼45 to ∼51 nm) of 1,6-hexanedithiol cross-linked gold nanoparticles (diameter: ∼3.9 ± 0.8 nm) were transferred onto surface-oxidized silicon substrates featuring square microcavities with edge lengths of ∼78 μm. After adjusting the contact pressure to 1.8 bar, intact membranes were printed in yields of ∼70%. The prestress of printed membranes was determined by measuring their resonance frequencies under electrostatic actuation. In general, the prestress values were in the ∼10 MPa range with standard deviations below 10% for parallel printed resonators. The deviations in average prestress between resonators printed onto different substrates were 21% or less. By increasing the temperature during the final transfer step from 5 to 48 °C, it was possible to tune the average prestress from ∼14 to ∼28 MPa. This effect was attributed to the pronounced thermal expansion of the PDMS stamp. Finally, by transfer printing layered films of graphene oxide/silk fibroin (GO/SF), it is shown that the approach can be adapted for the fabrication of freestanding membranes from very different nanomaterials.

Review and comparison of layer transfer methods for two-dimensional materials for emerging applications

Two-dimensional (2D) materials offer immense potential for scientific breakthroughs and technological innovations. While early demonstrations of 2D material-based electronics, optoelectronics, flextronics, straintronics, twistronics, and biomimetic devices exploited micromechanically-exfoliated single crystal flakes, recent years have witnessed steady progress in large-area growth techniques such as physical vapor deposition (PVD), chemical vapor deposition (CVD), and metal-organic CVD (MOCVD). However, use of high growth temperatures, chemically-active growth precursors and promoters, and the need for epitaxy often limit direct growth of 2D materials on the substrates of interest for commercial applications. This has led to the development of a large number of methods for the layer transfer of 2D materials from the growth substrate to the target application substrate with varying degrees of cleanliness, uniformity, and transfer-related damage. This review aims to catalog and discuss these layer transfer methods. In particular, the processes, advantages, and drawbacks of various transfer methods are discussed, as is their applicability to different technological platforms of interest for 2D material implementation.

Metastable 1T'-phase group VIB transition metal dichalcogenide crystals

Metastable 1T'-phase transition metal dichalcogenides (1T'-TMDs) with semi-metallic natures have attracted increasing interest owing to their uniquely distorted structures and fascinating phase-dependent physicochemical properties. However, the synthesis of high-quality metastable 1T'-TMD crystals, especially for the group VIB TMDs, remains a challenge. Here, we report a general synthetic method for the large-scale preparation of metastable 1T'-phase group VIB TMDs, including WS₂, WSe₂, MoS₂, MoSe₂, WS_2xSe_2(1-x) and MoS_2xSe_2(1-x). We solve the crystal structures of 1T'-WS₂, -WSe₂, -MoS₂ and -MoSe₂ with single-crystal X-ray diffraction. The as-prepared 1T'-WS₂ exhibits thickness-dependent intrinsic superconductivity, showing critical transition temperatures of 8.6 K for the thickness of 90.1 nm and 5.7 K for the single layer, which we attribute to the high intrinsic carrier concentration and the semi-metallic nature of 1T'-WS₂. This synthesis method will allow a more systematic investigation of the intrinsic properties of metastable TMDs.

Gas-Flow-Assisted Wrinkle-Free Transfer of a Centimeter-Scale Ultrathin Alumina Membrane onto Arbitrary Substrates

The transfer of an ultrathin membrane onto arbitrary substrates is important in different practical fields. Conventional wet-transfer methods inevitably induce wrinkle defects as a result of the large contact angle of the trapped droplet between the membrane and the substrate. Here, we demonstrate a gas flow-assisted method (GFAM) to transfer centimeter (cm)-scale ultrathin membranes onto arbitrary substrates (including a curved substrate) without wrinkles. GFAM makes use of contact angle hysteresis to bulge the trapped droplet between the substrate and the ultrathin membrane and simultaneously stretch the ultrathin membrane during rapid dewetting driven by gas flow. Moreover, GFAM can be easily fulfilled by using compressed air for seconds. Compared with conventional hydrophilic treatments or organic liquid wetting, this method has no durability concern and does not change the surface nature of substrates. Taking a widely used ultrathin anodic aluminum oxide (AAO) membrane as an example, we successfully demonstrate the application of a large-area wrinkle-free ultrathin AAO membrane to defect-free ordered nanostructure array fabrication and investigate the micro-scale details of macro-scale wrinkles generated by the conventional ways. In addition, its corresponding superiority over the defective counterpart is further studied in optical sensing. This method is highly valuable for promoting the simplicity of large-area ultrathin membrane transfer in practice.

Intrinsic effect of interfacial coupling on the high-frequency intralayer modes in twisted multilayer MoTe2

The interfacial coupling at the interface makes the van der Waals heterostructures (vdWHs) exhibit many unique properties that cannot be realized in its constituents. Such a study usually starts with a twisted stack of two flakes exfoliated from the same layered materials to form twisted multilayers, in which the impact of interfacial coupling on the low-frequency interlayer modes had been well understood. However, it is not clear how interfacial coupling affects the high-frequency intralayer modes of twisted multilayers. Herein, we perform high-resolution resonance Raman spectroscopy of the high-frequency intralayer modes in twisted multilayer MoTe2 (tMLM). All the Davydov entities of the out-of-plane intralayer mode are observed and distinguished at 4 K. It is found that the out-of-plane intralayer modes in tMLM are sensitive to its interfacial layer-breathing coupling so that the out-of-plane intralayer modes in tMLM do not show a direct relationship with those of the two constituents. However, the case is quite different for the in-plane intralayer modes in tMLM, whose spectral profile can be fitted by those of the corresponding modes of its constituents. This indicates that the in-plane intralayer modes are localized within the constituents in tMLM because of its negligible interfacial shear coupling at the interface. All the results can be well understood using the vdW model in which only the nearest neighbor interlayer/interfacial interaction is taken into account. This work directly builds the relationship between the Davydov splitting of the high-frequency intralayer vibrations and the low-frequency interlayer vibrations in tMLM, which can be further extended to other twisted materials and the related vdWHs.

Atomic-scale ion transistor with ultrahigh diffusivity

Biological ion channels rapidly and selectively gate ion transport through atomic-scale filters to maintain vital life functions. We report an atomic-scale ion transistor exhibiting ultrafast and highly selective ion transport controlled by electrical gating in graphene channels around 3 angstroms in height, made from a single flake of reduced graphene oxide. The ion diffusion coefficient reaches two orders of magnitude higher than the coefficient in bulk water. Atomic-scale ion transport shows a threshold behavior due to the critical energy barrier for hydrated ion insertion. Our in situ optical measurements suggest that ultrafast ion transport likely originates from highly dense packing of ions and their concerted movement inside the graphene channels.

Analyzing growth kinematics and fractal dimensions of molybdenum disulfide films

Though the positive role of alkali halides in realizing large area growth of transition metal dichalcogenide layers has been validated, the film-growth kinematics has not yet been fully established. This work presents a systematic analysis of the MoS₂morphology for films grown under various pre-treatment conditions of the substrate with sodium chloride (NaCl). At an optimum NaCl concentration, the domain size of the monolayer increased by almost two orders of magnitude compared to alkali-free growth of MoS₂. The results show an inverse relationship between fractal dimension and areal coverage of the substrate with monolayers and multi-layers, respectively. Using the Fact-Sage software, the role of NaCl in determining the partial pressures of Mo- and S-based compounds in gaseous phase at the growth temperature is elucidated. The presence of alkali salts is shown to affect the domain size and film morphology by affecting the Mo and S partial pressures. Compared to alkali-free synthesis under the same growth conditions, MoS₂film growth assisted by NaCl results in ≈81% of the substrate covered by monolayers. Under ideal growth conditions, at an optimum NaCl concentration, nucleation was suppressed, and domains enlarged, resulting in large area growth of MoS₂monolayers. No evidence of alkali or halogen atoms were found in the composition analysis of the films. On the basis of Raman spectroscopy and photoluminescence measurements, the MoS₂films were found to be of good crystalline quality.

Optically transparent vertical silicon nanowire arrays for live-cell imaging

Programmable nano-bio interfaces driven by tuneable vertically configured nanostructures have recently emerged as a powerful tool for cellular manipulations and interrogations. Such interfaces have strong potential for ground-breaking advances, particularly in cellular nanobiotechnology and mechanobiology. However, the opaque nature of many nanostructured surfaces makes non-destructive, live-cell characterization of cellular behavior on vertically aligned nanostructures challenging to observe. Here, a new nanofabrication route is proposed that enables harvesting of vertically aligned silicon (Si) nanowires and their subsequent transfer onto an optically transparent substrate, with high efficiency and without artefacts. We demonstrate the potential of this route for efficient live-cell phase contrast imaging and subsequent characterization of cells growing on vertically aligned Si nanowires. This approach provides the first opportunity to understand dynamic cellular responses to a cell-nanowire interface, and thus has the potential to inform the design of future nanoscale cellular manipulation technologies.

Atomically Thin Hexagonal Boron Nitride and Its Heterostructures

Atomically thin hexagonal boron nitride (h-BN) is an emerging star of 2D materials. It is taken as an optimal substrate for other 2D-material-based devices owing to its atomical flatness, absence of dangling bonds, and excellent stability. Specifically, h-BN is found to be a natural hyperbolic material in the mid-infrared range, as well as a piezoelectric material. All the unique properties are beneficial for novel applications in optoelectronics and electronics. Currently, most of these applications are merely based on exfoliated h-BN flakes at their proof-of-concept stages. Chemical vapor deposition (CVD) is considered as the most promising approach for producing large-scale, high-quality, atomically thin h-BN films and heterostructures. Herein, CVD synthesis of atomically thin h-BN is the focus. Also, the growth kinetics are systematically investigated to point out general strategies for controllable and scalable preparation of single-crystal h-BN film. Meanwhile, epitaxial growth of 2D materials onto h-BN and at its edge to construct heterostructures is summarized, emphasizing that the specific orientation of constituent parts in heterostructures can introduce novel properties. Finally, recent applications of atomically thin h-BN and its heterostructures in optoelectronics and electronics are summarized.

Recyclable free-polymer transfer of nano-grain MoS2 film onto arbitrary substrates

Clean transfer of transition metal dichalcogenides (TMDs) film is highly desirable, as intrinsic properties of TMDs may be degraded in a conventional wet transfer process using a polymer-based resist and toxic chemical solvent. Residues from the resists often remain on the transferred TMDs, thereby causing a significant variation in their electrical and optical characteristics. Therefore, an alternative to the conventional wet transfer method is needed-one in which no residue is left behind. Herein, we report that our molybdenum disulfide (MoS₂) films synthesized by plasma-enhanced chemical vapor deposition can be easily transferred onto arbitrary substrates (such as SiO₂/Si, polyimide, fluorine-doped tin oxide, and polyethersulfone) by using water alone, i.e. without residues or chemical solvents. The transferred MoS₂ film retains its original morphology and physical properties, which are investigated by optical microscopy, atomic force microscopy, Raman, x-ray photoelectron spectroscopy, and surface tension analysis. Furthermore, we demonstrate multiple recycling of the resist-free transfer for the nano-grain MoS₂ film. Using the proposed water-assisted and recyclable transfer, MoS₂/p-doped Si wafer photodiode was fabricated, and the opto-electric properties of the photodiode were characterized to demonstrate the feasibility of the proposed method.

Making van der Waals Heterostructures Assembly Accessible to Everyone

Van-der Waals heterostructures assembled from one or few atomic layer thickness crystals are becoming increasingly more popular in condensed matter physics. These structures are assembled using transfer machines, those are based on mask aligners, probe stations or are home-made. For many laboratories it is vital to build a simple, convenient and universal transfer machine. In this paper we discuss the guiding principles for the design of such a machine, review the existing machines and demonstrate our own construction, that is powerful and fast-in-operation. All components of this machine are extremely cheap and can be easily purchased using common online retail services. Moreover, assembling a heterostructure out of exfoliated commercially available hexagonal boron nitride and tungsten diselenide crystals with a pick-up technique and using the microphotolumenescence spectra, we show well-resolved exciton and trion lines, as a results of disorder suppression in WSe2 monolayer. Our results thus show that technology of the two-dimensional materials and heterostructures becomes accessible to anyone.

Fully Printed Flexible Chemiresistors with Tunable Selectivity Based on Gold Nanoparticles

This study presents a method for printing flexible chemiresistors comprising thin film transducers based on cross-linked gold nanoparticles (GNPs). First, interdigitated silver paste electrodes are printed onto polyimide (PI) foil via dispenser printing. Second, coatings of GNPs and dithiol/monothiol blends are inkjet-printed onto these electrode structures. 1,9-Nonanedithiol (9DT) is used as cross-linking agent and a variety of monothiols are added to tune the sensors’ chemical selectivity. When dosing these sensors with different analyte vapors (n-octane, toluene, 4-methyl-2-pentanone, 1-butanol, 1-propanol, ethanol, water; concentration range: 25–2000 ppm) they show fully reversible responses with short response and recovery times. The response isotherms follow a first-order Langmuir model, and their initial slopes reveal sensitivities of up to 4.5 × 10−5 ppm−1. Finally, it is demonstrated that arrays of printed sensors can be used to clearly discern analytes of different polarity.

Large-Area Tunable Red/Green/Blue Tri-Stacked Quantum Dot Light-Emitting Diode Using Sandwich-Structured Transparent Silver Nanowires Electrodes

Quantum dot light-emitting diodes (QLEDs), particularly those capable of emitting light with tunable colors, have attracted the attention of researchers for their variability in lighting and displays. So far, various color-tunable QLEDs have been developed using techniques of inkjet printing or white light combining with color filters (CFs), which however suffered from difficulties in mass production. Here, by inserting an insulating resin layer between two conductive silver nanowire (AgNW) layers, a unique AgNWs/resin/AgNWs (A/R/A) sandwich-structured electrode was developed, showing rather small sheet resistances at both sides and high transparency. The as-prepared A/R/A electrode is applicable for making a large-area transparent red QLED with an external quantum efficiency (EQE) of 11.42% and a transmittance of 72.5%. Furthermore, the A/R/A electrode can be used as intermediate connecting electrodes to stack three single-colored QLEDs, forming a novel structured R/G/B tri-stacked QLED, which enables emission not only of primary colors red, green, and blue independently with the maximum EQE of 8.22, 8.07, and 2.28%, respectively, but also arbitrary hybrid colors that cover a 107% National Television System Committee (NTSC) color triangle. Such large-area full-color-tunable tri-stacked QLED offers new perspectives for the next-generation solid-state scene lighting and full-color displays.

Universal Transfer Printing of Micelle-Templated Nanoparticles Using Plasma-Functionalized Graphene

Nanostructure incorporation into devices plays a key role in improving performance, yet processes for preparing two-dimensional (2D) arrays of colloidal nanoparticles tend not to be universally applicable, particularly for soft and oxygen-sensitive substrates for organic and perovskite-based electronics. Here, we show a method of transferring reverse micelle-deposited (RMD) nanoparticles (perovskite and metal oxide) on top of an organic layer, using a functionalized graphene carrier layer for transfer printing. As the technique can be applied universally to RMD nanoparticles, we used magnetic (γ-Fe₂O₃) and luminescent (methylammonium lead bromide (MAPbBr₃)) nanoparticles to validate the transfer-printing methodology. The strong photoluminescence from the MAPbBr₃ under UV illumination and high intrinsic field of the γ-Fe₂O₃ as measured by magnetic force microscopy (MFM), coupled with Raman measurements of the graphene layer, confirm that all components survive the transfer-printing process with little loss of properties. Such an approach to introducing uniform 2D arrays of nanoparticles onto sensitive substrates opens up new avenues to tune the device interfacial properties.

Preparation of Twisted Bilayer Graphene via the Wetting Transfer Method

Assembling monolayers into a bilayer system unlocks the rotational free degree of van der Waals (vdW) homo/heterostructure, enabling the building of twisted bilayer graphene (tBLG) which possesses novel electronic, optical, and mechanical properties. Previous methods for preparation of homo/heterstructures inevitably leave the polymer residue or hexagonal boron nitride (h-BN) mask, which usually obstructs the measurement of intrinsic mechanical and surface properties of tBLG. Undoubtedly, to fabricate the designable tBLG with clean interface and surface is necessary but challenging. Here, we propose a simple and handy method to prepare atomically clean twisted bilayer graphene with controllable twist angles based on wetting-induced delamination. This method can transfer tBLG onto a patterned substrate, which offers an excellent platform for the observation of physical phenomena such as relaxation of moiré pattern in marginally tBLG. These findings and insight should ultimately guide the designable packaging and atomic characterization of the two-dimensional (2D) materials.

Facile Morphological Qualification of Transferred Graphene by Phase-Shifting Interferometry

Post-growth graphene transfer to a variety of host substrates for circuitry fabrication has been among the most popular subjects since its successful development via chemical vapor deposition in the past decade. Fast and reliable evaluation tools for its morphological characteristics are essential for the development of defect-free transfer protocols. The implementation of conventional techniques, such as Raman spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy in production quality control at an industrial scale is difficult because they are limited to local areas, are time consuming, and their operation is complex. However, through a one-shot measurement within a few seconds, phase-shifting interferometry (PSI) successfully scans ≈1 mm² of transferred graphene with a vertical resolution of ≈0.1 nm. This provides crucial morphological information, such as the surface roughness derived from polymer residues, the thickness of the graphene, and its adhesive strength with respect to the target substrates. Graphene samples transferred via four different methods are evaluated using PSI, Raman spectroscopy, and AFM. Although the thickness of the nanomaterials measured by PSI can be highly sensitive to their refractive indices, PSI is successfully demonstrated to be a powerful tool for investigating the morphological characteristics of the transferred graphene for industrial and research purposes.

Facile Patterning of Silver Nanowires with Controlled Polarities via Inkjet-Assisted Manipulation of Interface Adhesion

Facile patterning technologies of silver nanowires (AgNWs) with low-cost, high-resolution, designable, scalable, substrate-independent, and transferable characteristics are highly desired. However, it remains a grand challenge for any material processing method to fulfil all desirable features. Herein, a new patterning method is introduced by combining inkjet printing with adhesion manipulation of substrate interfaces. Both positive and negative patterns (i.e., AgNW grid and rectangular patterns) have been simultaneously achieved, and the pattern polarity can be reversed through adhesion modification with judiciously selected supporting layers. The electrical performance of the AgNW grids depends on the AgNW interlocking structure, manifesting a strong structure-property correlation. High-resolution and complex AgNW patterns with line width and spacing as small as 10 μm have been demonstrated through selective deposition of poly(methyl methacrylate) layers. In addition, customized AgNW patterns, such as logos and words, can be fabricated onto A4-size samples and subsequently transferred to targeted substrates, including Si wafers, a curved glass vial, and a beaker. This reported inkjet-assisted process therefore offers a new effective route to manipulate AgNWs for advanced device applications.

High-Resolution Filtration Patterning of Silver Nanowire Electrodes for Flexible and Transparent Optoelectronic Devices

Silver nanowire (AgNW) electrodes attract significant attention in flexible and transparent optoelectronic devices; however, high-resolution patterning of AgNW electrodes remains a considerable challenge. In this study, we have introduced a simple technique for high-resolution solution patterning of AgNW networks, based on simple filtration of AgNW solution on a patterned polyimide shadow mask. This solution process allows the smallest pattern size of AgNW electrodes, down to a width of 3.5 μm. In addition, we have demonstrated the potential of these patterned AgNW electrodes for applications in flexible optoelectronic devices, such as photodetectors. Specifically, for flexible and semitransparent UV photodetectors, AgNW electrodes are embedded in sputtered ZnO films to enhance the photocurrent by light scattering and trapping, which resulted in a significantly enhanced photocurrent (up to 800%) compared to devices based on AgNW electrodes mounted on top of ZnO films. In addition, our photodetector could be operated well under extremely bent conditions (bending radius of approximately 770 μm) and provide excellent durability even after 500 bending cycles.

Monolithic Interface Contact Engineering to Boost Optoelectronic Performances of 2D Semiconductor Photovoltaic Heterojunctions

In optoelectronic devices based on two-dimensional (2D) semiconductor heterojunctions, the efficient charge transport of photogenerated carriers across the interface is a critical factor to determine the device performances. Here, we report an unexplored approach to boost the optoelectronic device performances of the WSe₂-MoS₂ p-n heterojunctions via the monolithic-oxidation-induced doping and resultant modulation of the interface band alignment. In the proposed device, the atomically thin WO_x layer, which is directly formed by layer-by-layer oxidation of WSe₂, is used as a charge transport layer for promoting hole extraction. The use of the ultrathin oxide layer significantly enhanced the photoresponsivity of the WSe₂-MoS₂ p-n junction devices, and the power conversion efficiency increased from 0.7 to 5.0%, maintaining the response time. The enhanced characteristics can be understood by the formation of the low Schottky barrier and favorable interface band alignment, as confirmed by band alignment analyses and first-principle calculations. Our work suggests a new route to achieve interface contact engineering in the heterostructures toward realizing high-performance 2D optoelectronics.

Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates

Growing III-nitride nanowires on 2D materials is advantageous, as it effectively decouples the underlying growth substrate from the properties of the nanowires. As a relatively new family of 2D materials, MXenes are promising candidates as III-nitride nanowire nucleation layers capable of providing simultaneous transparency and conductivity. In this work, we demonstrate the direct epitaxial growth of GaN nanowires on Ti₃C₂ MXene films. The MXene films consist of nanoflakes spray coated onto an amorphous silica substrate. We observed an epitaxial relationship between the GaN nanowires and the MXene nanoflakes due to the compatibility between the triangular lattice of Ti₃C₂ MXene and the hexagonal structure of wurtzite GaN. The GaN nanowires on MXene show good material quality and partial transparency at visible wavelengths. Nanoscale electrical characterization using conductive atomic force microscopy reveals a Schottky barrier height of ∼330 meV between the GaN nanowire and the Ti₃C₂ MXene film. Our work highlights the potential of using MXene as a transparent and conductive preorienting nucleation layer for high-quality GaN growth on amorphous substrates.

How Clean Is Clean? Recipes for van der Waals Heterostructure Cleanliness Assessment

Van der Waals (vdW) heterostructures, artificial stacks of two-dimensional materials, present an exciting platform to explore new physical phenomena and unique applications. An important and increasingly recognized factor limiting the electrical and optical performance of heterostructure samples is the presence of interfacial contamination. In published work reporting various heterostructure fabrication methods, evidence for the cleanliness of samples is often presented as optical and atomic force microscopy images, typically exhibiting a completely flat topography. In this work, we demonstrate that such samples may nonetheless contain a uniformly thin layer of contaminants at the heterostructure interface. As alternatives, we propose two robust visualization methods that are highly sensitive to such residues, based on photoluminescence mapping and on selective solvent diffusion. The detection capability and straightforward implementation of these two imaging techniques make them powerful tools to assess and improve the cleanliness of a wide variety of fabrication techniques for heterostructures comprising any combination of vdW materials.

Controlled assembly of artificial 2D materials based on the transfer of oxo-functionalized graphene

Functionalized 2D materials have unique properties, but are currently not used for the assembly of van der Waals heterostructures. Here, we present the controlled transfer of artificially synthesized, polar and highly transparent oxo-functionalized graphene, which can decouple graphene layers.

Magnetically Powered Shape-Transformable Liquid Metal Micromotors

Shape-transformable liquid metal (LM) micromachines have attracted the attention of the scientific community over the past 5 years, but the inconvenience of transfer routes and the use of corrosive fuels have limited their potential applications. In this work, a shape-transformable LM micromotor that is fabricated by a simple, versatile ice-assisted transfer printing method is demonstrated, in which an ice layer is employed as a "sacrificial" substrate that can enable the direct transfer of LM micromotors to arbitrary target substrates conveniently. The resulting LM microswimmers display efficient propulsion of over 60 µm s^-1 (≈3 bodylength s^-1 ) under elliptically polarized magnetic fields, comparable to that of the common magnetic micro/nanomotors with rigid bodies. Moreover, these LM micromotors can undergo dramatic morphological transformation in an aqueous environment under the irradiation of an alternating magnetic field. The ability to transform the shape and efficiently propel LM microswimmers holds great promise for chemical sensing, controlled cargo transport, materials science, and even artificial intelligence in ways that are not possible with rigid-bodies microrobots.

Direct Epitaxial Synthesis of Selective Two-Dimensional Lateral Heterostructures

Two-dimensional (2D) heterostructured or alloyed monolayers composed of transition metal dichalcogenides (TMDCs) have recently emerged as promising materials with great potential for atomically thin electronic applications. However, fabrication of such artificial TMDC heterostructures with a sharp interface and a large crystal size still remains a challenge because of the difficulty in controlling various growth parameters simultaneously during the growth process. Here, a facile synthetic protocol designed for the production of the lateral TMDC heterostructured and alloyed monolayers is presented. A chemical vapor deposition approach combined with solution-processed precursor deposition makes it possible to accurately control the sequential introduction time and the supersaturation levels of the vaporized precursors and thus reliably and exclusively produces selective and heterogeneous epitaxial growth of TMDC monolayer crystals. In addition, TMDC core/shell heterostructured (MoS₂/alloy, alloy/WS₂) or alloyed (Mo_1-xW_xS₂) monolayers are also easily obtained with precisely controlled growth parameters, such as sulfur introduction timing and growth temperature. These results represent a significant step toward the development of various 2D materials with interesting properties.

Deterministic Assembly of Three-Dimensional Suspended Nanowire Structures

Controlled assembly of nanowire three-dimensional (3D) geometry in an addressable way can lead to advanced 3D device integration and application. By combining a deterministic planar nanowire assembly and a transfer process, we show here a versatile method to construct vertically protruding and suspending nanowire structures. The method harnesses the merits from both processes to yield positional and geometric control in individual nanowires. Multiple transfers can further lead to hierarchical multiwire 3D structures. Assembled 3D nanowire structures have well-defined on-substrate terminals that allow scalable addressing and integration. Proof-of-concept nanosenors based on assembled 3D nanowire structures can achieve high sensitivity in force detection.

High-Performance Transparent Quantum Dot Light-Emitting Diode with Patchable Transparent Electrodes

Patchable electrodes are attractive for applications in optoelectronic devices because of their easy and reliable processability. However, development of reliable patchable transparent electrodes (TEs) with high optoelectronic performance is challenging; till now, optoelectronic devices fabricated with patchable TEs have been exhibiting limited performance. In this study, Ag nanowire (AgNW)/poly(methyl methacrylate) (PMMA) patchable TEs are developed and the highly efficient transparent quantum dot light-emitting diodes (QLEDs) using the patchable TEs are fabricated. AgNWs with optimized optoelectronic properties (figure of merit ≈ 3.3 × 10^-2) are coated by an ultrathin PMMA nanolayer and transferred to thermal release tapes that enable physical attachment of TEs on the QLEDs without a significant damage to the adjacent active layer. The transparent QLEDs using patchable transparent top electrodes display excellent performance, with the maximum total luminance and current efficiency of 27 310 cd·m^-2 and 45.99 cd·A^-1, respectively. Fabricated by all-solution-based processes, these QLEDs exhibit the best performance to date among devices adopting patchable top electrodes.

Cross-dimensional electron-phonon coupling in van der Waals heterostructures

The electron-phonon coupling (EPC) in a material is at the frontier of the fundamental research, underlying many quantum behaviors. van der Waals heterostructures (vdWHs) provide an ideal platform to reveal the intrinsic interaction between their electrons and phonons. In particular, the flexible van der Waals stacking of different atomic crystals leads to multiple opportunities to engineer the interlayer phonon modes for EPC. Here, in hBN/WS₂ vdWH, we report the strong cross-dimensional coupling between the layer-breathing phonons well extended over tens to hundreds of layer thick vdWH and the electrons localized within the few-layer WS₂ constituent. The strength of such cross-dimensional EPC can be well reproduced by a microscopic picture through the mediation by the interfacial coupling and also the interlayer bond polarizability model in vdWHs. The study on cross-dimensional EPC paves the way to manipulate the interaction between electrons and phonons in various vdWHs by interfacial engineering for possible interesting physical phenomena.

The strength of electron-phonon coupling can be directly probed by Raman spectroscopy. Here, the authors use low-frequency Raman spectroscopy to unveil the existence of a strong cross-dimensional coupling between the bulk-like layer-breathing phonons in an hBN/WS2 heterostructure and the electrons localized within its few-layer WS2 constituent.