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Song H, Chen S, Sun X, Cui Y, Yildirim T, Kang J, Yang S, Yang F, Lu Y, Zhang L. Enhancing 2D Photonics and Optoelectronics with Artificial Microstructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403176. [PMID: 39031754 PMCID: PMC11348073 DOI: 10.1002/advs.202403176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 06/04/2024] [Indexed: 07/22/2024]
Abstract
By modulating subwavelength structures and integrating functional materials, 2D artificial microstructures (2D AMs), including heterostructures, superlattices, metasurfaces and microcavities, offer a powerful platform for significant manipulation of light fields and functions. These structures hold great promise in high-performance and highly integrated optoelectronic devices. However, a comprehensive summary of 2D AMs remains elusive for photonics and optoelectronics. This review focuses on the latest breakthroughs in 2D AM devices, categorized into electronic devices, photonic devices, and optoelectronic devices. The control of electronic and optical properties through tuning twisted angles is discussed. Some typical strategies that enhance light-matter interactions are introduced, covering the integration of 2D materials with external photonic structures and intrinsic polaritonic resonances. Additionally, the influences of external stimuli, such as vertical electric fields, enhanced optical fields and plasmonic confinements, on optoelectronic properties is analysed. The integrations of these devices are also thoroughly addressed. Challenges and future perspectives are summarized to stimulate research and development of 2D AMs for future photonics and optoelectronics.
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Affiliation(s)
- Haizeng Song
- Henan Key Laboratory of Rare Earth Functional MaterialsZhoukou Normal UniversityZhoukou466001China
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shuai Chen
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Xueqian Sun
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Yichun Cui
- National Key Laboratory of Science and Technology on Test Physics and Numerical MathematicsBeijing100190China
| | - Tanju Yildirim
- Faculty of Science and EngineeringSouthern Cross UniversityEast LismoreNSW2480Australia
| | - Jian Kang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shunshun Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Fan Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Linglong Zhang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
- Laboratory of Solid State MicrostructuresNanjing UniversityNanjing210093China
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Cong X, Gao X, Sun H, Zhou X, Zhu Y, Gao X, Tan C, Wang J, Nian L, Nie Y, Peng H. Epitaxial Integration of Transferable High-κ Dielectric and 2D Semiconductor. J Am Chem Soc 2024. [PMID: 39034718 DOI: 10.1021/jacs.4c04984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/23/2024]
Abstract
The synthesis of high-dielectric-constant (high-κ) dielectric materials and their integration with channel materials have been the key challenges in the state-of-the-art transistor architecture, as they can provide strong gate control and low operating voltage. For next-generation electronics, high-mobility two-dimensional (2D) layered semiconductors with dangling-bond-free surfaces and an atomic-thick thickness are being explored as channel materials to achieve shorter channel lengths and less interfacial scattering. Nowadays, the integration of high-κ dielectrics with high-mobility 2D semiconductors mainly relies on atomic layer deposition or transfer stacking, which may cause several undesirable problems, such as channel damage and interface traps. Here, we demonstrate the integration of high-mobility 2D semiconducting Bi2O2Se with transferable high-κ SrTiO3 as a 2D field-effect transistor by direct epitaxial growth. Remarkably, such 2D heterostructures can be efficiently transferred from the water-soluble Sr3Al2O6 sacrificial layer onto arbitrary substrates. The as-fabricated 2D Bi2O2Se/SrTiO3 transistors exhibit an on/off ratio over 104 and a subthreshold swing down to 90 mV/dec. Furthermore, the 2D Bi2O2Se/SrTiO3 heterostructures can be easily transferred onto flexible polyethylene terephthalate (PET) substrates, and the as-fabricated transistors exhibit good potential in flexible electronics. Our study opens up a new avenue for the integration of high-κ dielectrics with high-mobility 2D semiconductors and paves the way for the exploration of multifunctional electronic devices.
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Affiliation(s)
- Xuzhong Cong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Xiaoyin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210046, China
| | - Xuehan Zhou
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Yongchao Zhu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Xin Gao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Congwei Tan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | - Jingyue Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
| | | | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210046, China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, 100871 Beijing, China
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Sun Y, Ellis A, Diaz S, Li W, Miao M. Constructing Tunable Electrides on Monolayer Transition Metal Dichalcogenides. J Phys Chem Lett 2024; 15:6174-6182. [PMID: 38836596 DOI: 10.1021/acs.jpclett.4c01263] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
Electrides have emerged as promising materials with exotic properties due to the presence of localized electrons detached from all atoms. Despite the continuous discovery of many new electrides, most of them are based on atypical compositions, and their applications require an inert surface structure to passivate reactive excess electrons. Here, we demonstrate a different route to attain tunable electrides. We first report that monolayer transition metal dichalcogenides (TMDCs) exhibit weak electride characteristics, which is the remainder of the electride feature of the transition metal sublattice. By introducing chalcogen vacancies, the enhanced electride characteristics are comparable to those of known electrides. Since the precise tailoring of the chalcogen vacancy concentration has been achieved experimentally, we proposed that TMDCs can be used to build electrides with controllable intensities. Furthermore, we demonstrate that the electride states at the chalcogen vacancy of monolayer TMDCs will play an important role in catalyzing hydrogen evolution reactions.
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Affiliation(s)
- Yuanhui Sun
- Suzhou Laboratory, Suzhou, Jiangsu 215123, P. R. China
- Department of Chemistry and Biochemistry, California State University Northridge, Northridge, California 91330, United States
| | - Austin Ellis
- Department of Chemistry and Biochemistry, California State University Northridge, Northridge, California 91330, United States
| | - Saul Diaz
- Department of Chemistry and Biochemistry, California State University Northridge, Northridge, California 91330, United States
| | - Wei Li
- Suzhou Laboratory, Suzhou, Jiangsu 215123, P. R. China
- Gusu Laboratory of Materials, Suzhou, Jiangsu 215123, P. R. China
| | - Maosheng Miao
- Department of Chemistry and Biochemistry, California State University Northridge, Northridge, California 91330, United States
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4
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Yin L, Cheng R, Ding J, Jiang J, Hou Y, Feng X, Wen Y, He J. Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits. ACS NANO 2024; 18:7739-7768. [PMID: 38456396 DOI: 10.1021/acsnano.3c10900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Silicon transistors are approaching their physical limit, calling for the emergence of a technological revolution. As the acknowledged ultimate version of transistor channels, 2D semiconductors are of interest for the development of post-Moore electronics due to their useful properties and all-in-one potentials. Here, the promise and current status of 2D semiconductors and transistors are reviewed, from materials and devices to integrated applications. First, we outline the evolution and challenges of silicon-based integrated circuits, followed by a detailed discussion on the properties and preparation strategies of 2D semiconductors and van der Waals heterostructures. Subsequently, the significant progress of 2D transistors, including device optimization, large-scale integration, and unconventional devices, are presented. We also examine 2D semiconductors for advanced heterogeneous and multifunctional integration beyond CMOS. Finally, the key technical challenges and potential strategies for 2D transistors and integrated circuits are also discussed. We envision that the field of 2D semiconductors and transistors could yield substantial progress in the upcoming years and hope this review will trigger the interest of scientists planning their next experiment.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jiahui Ding
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yutang Hou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Xiaoqiang Feng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Wuhan Institute of Quantum Technology, Wuhan 430206, People's Republic of China
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5
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Bao R, Wang S, Liu X, Tu K, Liu J, Huang X, Liu C, Zhou P, Liu S. Neuromorphic electro-stimulation based on atomically thin semiconductor for damage-free inflammation inhibition. Nat Commun 2024; 15:1327. [PMID: 38351088 PMCID: PMC10864345 DOI: 10.1038/s41467-024-45590-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Accepted: 01/26/2024] [Indexed: 02/16/2024] Open
Abstract
Inflammation, caused by accumulation of inflammatory cytokines from immunocytes, is prevalent in a variety of diseases. Electro-stimulation emerges as a promising candidate for inflammatory inhibition. Although electroacupuncture is free from surgical injury, it faces the challenges of imprecise pathways/current spikes, and insufficiently defined mechanisms, while non-optimal pathway or spike would require high current amplitude, which makes electro-stimulation usually accompanied by damage and complications. Here, we propose a neuromorphic electro-stimulation based on atomically thin semiconductor floating-gate memory interdigital circuit. Direct stimulation is achieved by wrapping sympathetic chain with flexible electrodes and floating-gate memory are programmable to fire bionic spikes, thus minimizing nerve damage. A substantial decrease (73.5%) in inflammatory cytokine IL-6 occurred, which also enabled better efficacy than commercial stimulator at record-low currents with damage-free to sympathetic neurons. Additionally, using transgenic mice, the anti-inflammation effect is determined by β2 adrenergic signaling from myeloid cell lineage (monocytes/macrophages and granulocytes).
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Affiliation(s)
- Rong Bao
- Shanghai Sixth People's Hospital Affiliated to Shanghai Jiao Tong University School of Medicine, Shanghai, 200025, China
| | - Shuiyuan Wang
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
| | - Xiaoxian Liu
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Kejun Tu
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, DCI Joint Team, Collaborative Innovation Center of IFSA, Department of Micro/Nano Electronics, Shanghai Jiao Tong university, Shanghai, 200240, China
| | - Jingquan Liu
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, DCI Joint Team, Collaborative Innovation Center of IFSA, Department of Micro/Nano Electronics, Shanghai Jiao Tong university, Shanghai, 200240, China
| | - Xiaohe Huang
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Chunsen Liu
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
| | - Shen Liu
- Shanghai Sixth People's Hospital Affiliated to Shanghai Jiao Tong University School of Medicine, Shanghai, 200025, China.
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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7
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Ji S, Bae SR, Hu L, Hoang AT, Seol MJ, Hong J, Katiyar AK, Kim BJ, Xu D, Kim SY, Ahn JH. Perovskite Light-Emitting Diode Display Based on MoS 2 Backplane Thin-Film Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309531. [PMID: 37985162 DOI: 10.1002/adma.202309531] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Revised: 11/07/2023] [Indexed: 11/22/2023]
Abstract
The uniform deposition of perovskite light-emitting diodes (PeLEDs) and their integration with backplane thin-film transistors (TFTs) remain challenging for large-area display applications. Herein, an active-matrix PeLED display fabricated via the heterogeneous integration of cesium lead bromide LEDs and molybdenum disulfide (MoS2 )-based TFTs is presented. The single-source evaporation method enables the deposition of highly uniform perovskite thin films over large areas. PeLEDs are integrated with MoS2 TFTs to fabricate an active-matrix PeLED display with an 8 × 8 array, which exhibits excellent brightness control capability and high switching speed. This study demonstrates the potential of PeLEDs as candidates for next-generation displays and presents a novel approach for fabricating optoelectronic devices via the heterogeneous integration of 2D materials and perovskites, thereby paving the way toward the fabrication of practical future optoelectronic systems.
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Affiliation(s)
- Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Sa-Rang Bae
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Luhing Hu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Myeong Jin Seol
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Soo Young Kim
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Republic of Korea
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8
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Liao L, Kovalska E, Regner J, Song Q, Sofer Z. Two-Dimensional Van Der Waals Thin Film and Device. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2303638. [PMID: 37731156 DOI: 10.1002/smll.202303638] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Revised: 08/07/2023] [Indexed: 09/22/2023]
Abstract
In the rapidly evolving field of thin-film electronics, the emergence of large-area flexible and wearable devices has been a significant milestone. Although organic semiconductor thin films, which can be manufactured through solution processing, have been identified, their utility is often undermined by their poor stability and low carrier mobility under ambient conditions. However, inorganic nanomaterials can be solution-processed and demonstrate outstanding intrinsic properties and structural stability. In particular, a series of two-dimensional (2D) nanosheet/nanoparticle materials have been shown to form stable colloids in their respective solvents. However, the integration of these 2D nanomaterials into continuous large-area thin with precise control of layer thickness and lattice orientation still remains a significant challenge. This review paper undertakes a detailed analysis of van der Waals thin films, derived from 2D materials, in the advancement of thin-film electronics and optoelectronic devices. The superior intrinsic properties and structural stability of inorganic nanomaterials are highlighted, which can be solution-processed and underscor the importance of solution-based processing, establishing it as a cornerstone strategy for scalable electronic and optoelectronic applications. A comprehensive exploration of the challenges and opportunities associated with the utilization of 2D materials for the next generation of thin-film electronics and optoelectronic devices is presented.
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Affiliation(s)
- Liping Liao
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
| | - Evgeniya Kovalska
- Faculty of Environment, Science and Economy, Department of Engineering, Exeter, EX4 4QF, UK
| | - Jakub Regner
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
| | - Qunliang Song
- School of Materials and Energy, Southwest University, Chongqing, 400715, P. R. China
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology, Technicka 5, Prague, 166 28, Czech Republic
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Gupta A, Kaur S, Singh H, Garg S, Kumar A, Malhotra E. Quantum dots: a tool for the detection of explosives/nitro derivatives. ANALYTICAL METHODS : ADVANCING METHODS AND APPLICATIONS 2023; 15:6362-6376. [PMID: 37975188 DOI: 10.1039/d3ay01566a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
Nitro derivatives are considered as major environmental pollutants and issues of health concern. In current times, a variety of methods and techniques have been utilized for the sensing of these nitro derivatives. In view of this, the remarkable fluorescence properties of quantum dots (QDs) provide a great opportunity to detect these nitro derivatives. This review highlighted the recent reports of QDs as the sensing material for these nitro derivative explosives. Different modifications in QDs using physical and chemical approaches can be used to improve their sensing output. Various interaction mechanisms have been discussed between QDs and nitro derivatives to change their fluorescence properties. Finally, the current challenges and the perspective for the forthcoming future are provided in the concluding section. We hope this review will be beneficial in guiding the utilization of QDs in sensing applications.
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Affiliation(s)
- Ankush Gupta
- Department of Chemistry, DAV University, Jalandhar 144012, Punjab, India.
| | - Sharanjeet Kaur
- Department of Chemistry, DAV University, Jalandhar 144012, Punjab, India.
| | - Harminder Singh
- Department of Chemistry, DAV University, Jalandhar 144012, Punjab, India.
| | - Shelly Garg
- Department of Mathematics, DAV University, Jalandhar 144012, Punjab, India
| | - Akshay Kumar
- Department of Chemistry and Chemical Sciences, Central University of Jammu, Jammu 181143, India
| | - Ekta Malhotra
- Department of Chemistry, DAV University, Jalandhar 144012, Punjab, India.
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Lee JA, Yoon J, Hwang S, Hwang H, Kwon JD, Lee SK, Kim Y. Integrated Logic Circuits Based on Wafer-Scale 2D-MoS 2 FETs Using Buried-Gate Structures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2870. [PMID: 37947714 PMCID: PMC10649149 DOI: 10.3390/nano13212870] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Revised: 10/20/2023] [Accepted: 10/25/2023] [Indexed: 11/12/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS2), stand out due to their atomically thin layered structure and exceptional electrical properties. Consequently, they could potentially become one of the main materials for future integrated high-performance logic circuits. However, the local back-gate-based MoS2 transistors on a silicon substrate can lead to the degradation of electrical characteristics. This degradation is caused by the abnormal effect of gate sidewalls, leading to non-uniform field controllability. Therefore, the buried-gate-based MoS2 transistors where the gate electrodes are embedded into the silicon substrate are fabricated. The several device parameters such as field-effect mobility, on/off current ratio, and breakdown voltage of gate dielectric are dramatically enhanced by field-effect mobility (from 0.166 to 1.08 cm2/V·s), on/off current ratio (from 4.90 × 105 to 1.52 × 107), and breakdown voltage (from 15.73 to 27.48 V) compared with a local back-gate-based MoS2 transistor, respectively. Integrated logic circuits, including inverters, NAND, NOR, AND, and OR gates, were successfully fabricated by 2-inch wafer-scale through the integration of a buried-gate MoS2 transistor array.
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Affiliation(s)
- Ju-Ah Lee
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
- School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Jongwon Yoon
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
| | - Seungkwon Hwang
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
| | - Hyunsang Hwang
- Center for Single Atom-Based Semiconductor Device, Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea;
| | - Jung-Dae Kwon
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
| | - Seung-Ki Lee
- School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Yonghun Kim
- Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea; (J.-A.L.); (J.Y.); (S.H.); (J.-D.K.)
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11
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Hong S, Hong CU, Lee S, Jang M, Jang C, Lee Y, Widiapradja LJ, Park S, Kim K, Son YW, Yook JG, Im S. Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning. SCIENCE ADVANCES 2023; 9:eadh9770. [PMID: 37467332 DOI: 10.1126/sciadv.adh9770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2023] [Accepted: 06/16/2023] [Indexed: 07/21/2023]
Abstract
Graphene, with superior electrical tunabilities, has arisen as a multifunctional insertion layer in vertically stacked devices. Although the role of graphene inserted in metal-semiconductor junctions has been well investigated in quasi-static charge transport regime, the implication of graphene insertion at ultrahigh frequencies has rarely been considered. Here, we demonstrate the diode operation of vertical Pt/n-MoSe2/graphene/Au assemblies at ~200-GHz cutoff frequency (fC). The electric charge modulation by the inserted graphene becomes essentially frozen above a few GHz frequencies due to graphene quantum capacitance-induced delay, so that the Ohmic graphene/MoSe2 junction may be transformed to a pinning-free Schottky junction. Our diodes exhibit much lower total capacitance than devices without graphene insertion, deriving an order of magnitude higher fC, which clearly demonstrates the merit of graphene at high frequencies.
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Affiliation(s)
- Sungjae Hong
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
| | - Chang-Ui Hong
- Department of Electrical Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Sol Lee
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea
| | - Myeongjin Jang
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea
| | - Chorom Jang
- Department of Electrical Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Yangjin Lee
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea
| | - Livia Janice Widiapradja
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
| | - Sam Park
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
| | - Kwanpyo Kim
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Republic of Korea
| | - Young-Woo Son
- School of Computational Sciences, Korea Institute for Advanced Study, Seoul 02455, Republic of Korea
| | - Jong-Gwan Yook
- Department of Electrical Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seongil Im
- Department of Physics, Van der Waals Materials Research Center, Yonsei University, Seoul 03722, Republic of Korea
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12
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Kesama MR, Kim S. DNA-Nanocrystal Assemblies for Environmentally Responsive and Highly Efficient Energy Harvesting and Storage. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206848. [PMID: 36950732 PMCID: PMC10190503 DOI: 10.1002/advs.202206848] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2022] [Revised: 02/22/2023] [Indexed: 05/18/2023]
Abstract
Natural polymer-based and self-powered bioelectronic devices are attracting attention owing to an increased interest in human health monitoring and human-machine interfaces. However, obtaining both high efficiency and multifunctionality from a single natural polymer-based bioelectronics platform is still challenging. Here, molybdenum disulfide (MoS2 ) nanoparticle- and carbon quantum dot (CQDs)-incorporated deoxyribonucleic acid (DNA) nanocomposites are reported for energy harvesting, motion sensing, and charge storing. With nanomaterial-based electrodes, the MoS2 -CQD-DNA nanocomposite exhibits a high triboelectric open-circuit voltage of 1.6 kV (average) and an output power density of 275 mW cm-2 , which is sufficient for turning on hundred light-emitting diodes and for a highly sensitive motion sensing. Notably, the triboelectric performance can be tuned by external stimuli (light and thermal energy). Thermal and photon energy absorptions by the nanocomposite generate additional charges, resulting in an enhanced triboelectric performance. The MoS2 -CQD-DNA nanocomposite can also be applied as a capacitor material. Based on the obtained electronic properties, such as capacitances, dielectric constants, work functions, and bandgaps, it is possible that the charges generated by the MoS2 -CQD-DNA triboelectric nanogenerator can be stored in the MoS2 -CQD-DNA capacitor. A new way is presented here to expand the application area of self-powered devices in wearable and implantable electronics.
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Affiliation(s)
- Mallikarjuna Reddy Kesama
- Department of Physics and Institute of Basic Sciences and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT)Sungkyunkwan UniversitySuwon16419Republic of Korea
| | - Sunghwan Kim
- Department of Biomedical EngineeringHanyang UniversitySeoul04763Republic of Korea
- Department of Electronic EngineeringHanyang UniversitySeoul04763Republic of Korea
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13
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Fatima S, Gu Y, Yang SJ, Kutagulla S, Rizwan S, Akinwande D. Comparative Study between Sulfurized MoS 2 from Molybdenum and Molybdenum Trioxide Precursors for Thin-Film Device Applications. ACS APPLIED MATERIALS & INTERFACES 2023; 15:16308-16316. [PMID: 36939015 DOI: 10.1021/acsami.3c00824] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials have been studied as an emerging class of nanomaterials owing to their attractive properties in nearly every field of science and technology. Molybdenum disulfide (MoS2) is one of the more promising candidates of these atomically thin 2D materials for its technological potential. The facile synthesis of MoS2 remains a matter of broad interest. In this study, MoS2 was synthesized by chemical vapor deposition sulfurization at various temperatures (550 °C, 650 °C, and 750 °C) of either precursor molybdenum metal (Mo) or molybdenum trioxide (MoO3) deposited on silicon/silicon dioxide (Si/SiO2) via e-beam evaporation. Monolayer, bilayer, and few layers sulfurized samples have been grown and verified by Raman, photoluminescence spectroscopy, XRD, XPS, and AFM. MoO3 sulfurization provided monolayer growth in comparison to Mo sulfurization under the same conditions and precursor thicknesses. Optical microscopy showed the homogeneous nature of grown samples. A main finding of this work is that MoO3 sulfurization produced higher quality MoS2 as compared to those grown by an Mo precursor. Device characteristics based on monolayer MoO3 sulfurized MoS2-x include nonvolatile resistive switching with Ion/Ioff ≈ 104 at a relatively low operating bias of ±1 V. In addition, field-effect transistor characteristics revealed p-type material growth with a carrier mobility ∼ 41 cm2 V-1 s-1, which is in contrast to typically observed n-type characteristics.
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Affiliation(s)
- Sabeen Fatima
- Physics Characterization and Simulations Lab (PCSL), Department of Physics, School of Natural Sciences (SNS), National University of Sciences and Technology (NUST), Islamabad 54000, Pakistan
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Yuqian Gu
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Sung Jin Yang
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
| | - Shanmukh Kutagulla
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
- Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Syed Rizwan
- Physics Characterization and Simulations Lab (PCSL), Department of Physics, School of Natural Sciences (SNS), National University of Sciences and Technology (NUST), Islamabad 54000, Pakistan
| | - Deji Akinwande
- Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
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14
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Li Z, Chiang T, Kuo P, Tu C, Kuo Y, Liu P. Heterogeneous Integration of Atomically-Thin Indium Tungsten Oxide Transistors for Low-Power 3D Monolithic Complementary Inverter. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205481. [PMID: 36658711 PMCID: PMC10037976 DOI: 10.1002/advs.202205481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/21/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
In this work, the authors demonstrate a novel vertically-stacked thin film transistor (TFT) architecture for heterogeneously complementary inverter applications, composed of p-channel polycrystalline silicon (poly-Si) and n-channel amorphous indium tungsten oxide (a-IWO), with a low footprint than planar structure. The a-IWO TFT with channel thickness of approximately 3-4 atomic layers exhibits high mobility of 24 cm2 V-1 s-1 , near ideally subthreshold swing of 63 mV dec-1 , low leakage current below 10-13 A, high on/off current ratio of larger than 109 , extremely small hysteresis of 0 mV, low contact resistance of 0.44 kΩ-µm, and high stability after encapsulating a passivation layer. The electrical characteristics of n-channel a-IWO TFT are well-matched with p-channel poly-Si TFT for superior complementary metal-oxide-semiconductor technology applications. The inverter can exhibit a high voltage gain of 152 V V-1 at low supply voltage of 1.5 V. The noise margin can be up to 80% of supply voltage and perform the symmetrical window. The pico-watt static power consumption inverter is achieved by the wide energy bandgap of a-IWO channel and atomically-thin channel. The vertically-stacked complementary field-effect transistors (CFET) with high energy-efficiency can increase the circuit density in a chip to conform the development of next-generation semiconductor technology.
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Affiliation(s)
- Zhen‐Hao Li
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Tsung‐Che Chiang
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Po‐Yi Kuo
- Department of Electronic EngineeringNational Chin‐Yi University of TechnologyTaichung411030Taiwan
| | - Chun‐Hao Tu
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Yue Kuo
- Department of Chemical EngineeringTexas A&M UniversityCollege StationTX77843‐3127USA
| | - Po‐Tsun Liu
- Department of Photonics, College of Electrical and Computer EngineeringNational Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
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15
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Luo JJ, Zhang H, Zou HL, Luo HQ, Li NB, Li BL. Tracking the Growth of Chiral Plasmonic Nanocrystals at Molybdenum Disulfide Heterostructural Interfaces. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:3052-3061. [PMID: 36787386 DOI: 10.1021/acs.langmuir.2c03101] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The way of accurately regulating the growth of chiral plasmonics is of great importance for exploring the chirality information and improving its potential values. Herein, cysteine enantiomers modulate the anisotropic and epitaxial growth of gold nanoplasmonics on seeds of exfoliated MoS2 nanosheets. The heterostructural Au and MoS2 hybrids induced by enantiomeric cysteine are presented with chiroptical characteristics, dendritic morphologies, and plasmonic performances. Moreover, the synthesis, condition optimization, formation mechanism, and plasmonic properties of Au and MoS2 dendritic nanostructures are studied. The chirality characteristics are identified using the circular dichroism spectra and scanning electron microscopy. Time-resolved transmission electron microscopy and UV-vis spectra of the intermediate products captured are analyzed to confirm the formation mechanism of dendritic plasmonic nanostructures at heterostructural surfaces. The specific dendritic morphologies originate from the synergistic impacts of heterostructural MoS2 interfaces and enantiomeric cysteine-induced anisotropic manipulation. Significantly, the developed synthesis strategy of chiral nanostructures at heterostructural interfaces is highly promising in promoting the understanding of the plasmonic function and crucial chirality bioinformation.
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Affiliation(s)
- Jun Jiang Luo
- School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, P. R. China
| | - Hang Zhang
- School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, P. R. China
| | - Hao Lin Zou
- School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, P. R. China
| | - Hong Qun Luo
- School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, P. R. China
| | - Nian Bing Li
- School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, P. R. China
| | - Bang Lin Li
- School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, P. R. China
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16
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Improvements in 2D p-type WSe 2 transistors towards ultimate CMOS scaling. Sci Rep 2023; 13:3304. [PMID: 36849724 PMCID: PMC9971212 DOI: 10.1038/s41598-023-30317-4] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 02/21/2023] [Indexed: 03/01/2023] Open
Abstract
This paper provides comprehensive experimental analysis relating to improvements in the two-dimensional (2D) p-type metal-oxide-semiconductor (PMOS) field effect transistors (FETs) by pure van der Waals (vdW) contacts on few-layer tungsten diselenide (WSe2) with high-k metal gate (HKMG) stacks. Our analysis shows that standard metallization techniques (e.g., e-beam evaporation at moderate pressure ~ 10-5 torr) results in significant Fermi-level pinning, but Schottky barrier heights (SBH) remain small (< 100 meV) when using high work function metals (e.g., Pt or Pd). Temperature-dependent analysis uncovers a more dominant contribution to contact resistance from the channel access region and confirms significant improvement through less damaging metallization techniques (i.e., reduced scattering) combined with strongly scaled HKMG stacks (enhanced carrier density). A clean contact/channel interface is achieved through high-vacuum evaporation and temperature-controlled stepped deposition providing large improvements in contact resistance. Our study reports low contact resistance of 5.7 kΩ-µm, with on-state currents of ~ 97 µA/µm and subthreshold swing of ~ 140 mV/dec in FETs with channel lengths of 400 nm. Furthermore, theoretical analysis using a Landauer transport ballistic model for WSe2 SB-FETs elucidates the prospects of nanoscale 2D PMOS FETs indicating high-performance (excellent on-state current vs subthreshold swing benchmarks) towards the ultimate CMOS scaling limit.
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17
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Yang W, Mu Y, Chen X, Jin N, Song J, Chen J, Dong L, Liu C, Xuan W, Zhou C, Cong C, Shang J, He S, Wang G, Li J. CVD growth of large-area monolayer WS 2 film on sapphire through tuning substrate environment and its application for high-sensitive strain sensor. NANOSCALE RESEARCH LETTERS 2023; 18:13. [PMID: 36795193 DOI: 10.1186/s11671-023-03782-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Accepted: 01/28/2023] [Indexed: 05/24/2023]
Abstract
Large-area, continuous monolayer WS2 exhibits great potential for future micro-nanodevice applications due to its special electrical properties and mechanical flexibility. In this work, the front opening quartz boat is used to increase the amount of sulfur (S) vapor under the sapphire substrate, which is critical for achieving large-area films during the chemical vapor deposition processes. COMSOL simulations reveal that the front opening quartz boat will significantly introduce gas distribute under the sapphire substrate. Moreover, the gas velocity and height of substrate away from the tube bottom will also affect the substrate temperature. By carefully optimizing the gas velocity, temperature, and height of substrate away from the tube bottom, a large-scale continues monolayered WS2 film was achieved. Field-effect transistor based on the as-grown monolayer WS2 showed a mobility of 3.76 cm2V-1 s-1 and ON/OFF ratio of 106. In addition, a flexible WS2/PEN strain sensor with a gauge factor of 306 was fabricated, showing great potential for applications in wearable biosensors, health monitoring, and human-computer interaction.
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Affiliation(s)
- Weihuang Yang
- Engineering Research Center of Smart Microsensors and Microsystems, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China.
| | - Yuanbin Mu
- Engineering Research Center of Smart Microsensors and Microsystems, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China
| | - Xiangshuo Chen
- Engineering Research Center of Smart Microsensors and Microsystems, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China
| | - Ningjing Jin
- Engineering Research Center of Smart Microsensors and Microsystems, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China
| | - Jiahao Song
- Engineering Research Center of Smart Microsensors and Microsystems, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China
| | - Jiajun Chen
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai, 200433, China
| | - Linxi Dong
- Engineering Research Center of Smart Microsensors and Microsystems, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China.
| | - Chaoran Liu
- Engineering Research Center of Smart Microsensors and Microsystems, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China
| | - Weipeng Xuan
- Engineering Research Center of Smart Microsensors and Microsystems, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China
| | - Changjie Zhou
- Department of Physics, School of Science, Jimei University, Xiamen, 361021, China.
| | - Chunxiao Cong
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai, 200433, China.
- High Tech Center for New Materials, Novel Devices and Cutting Edge Manufacturing, Yiwu Research Institute of Fudan University, Chengbei Road, Yiwu City, 322000, Zhejiang, China.
| | - Jingzhi Shang
- Institute of Flexible Electronics (IFE), Northwestern Polytechnical University (NPU), 1 Dongxiang Road, Chang'an District, Xi'an, 710129, China
| | - Silin He
- Institute of Flexible Electronics (IFE), Northwestern Polytechnical University (NPU), 1 Dongxiang Road, Chang'an District, Xi'an, 710129, China
| | - Gaofeng Wang
- Engineering Research Center of Smart Microsensors and Microsystems, Ministry of Education, College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China
| | - Jing Li
- Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen, 361005, China
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18
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Chang YH, Lin YS, James Singh K, Lin HT, Chang CY, Chen ZZ, Zhang YW, Lin SY, Kuo HC, Shih MH. AC-driven multicolor electroluminescence from a hybrid WSe 2 monolayer/AlGaInP quantum well light-emitting device. NANOSCALE 2023; 15:1347-1356. [PMID: 36562246 DOI: 10.1039/d2nr03725d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Light-emitting diodes (LEDs) are used widely, but when operated at a low-voltage direct current (DC), they consume unnecessary power because a converter must be used to convert it to an alternating current (AC). DC flow across devices also causes charge accumulation at a high current density, leading to lowered LED reliability. In contrast, gallium-nitride-based LEDs can be operated without an AC-DC converter being required, potentially leading to greater energy efficiency and reliability. In this study, we developed a multicolor AC-driven light-emitting device by integrating a WSe2 monolayer and AlGaInP-GaInP multiple quantum well (MQW) structures. The CVD-grown WSe2 monolayer was placed on the top of an AlGaInP-based light-emitting diode (LED) wafer to create a two-dimensional/three-dimensional heterostructure. The interfaces of these hybrid devices are characterized and verified through transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques. More than 20% energy conversion from the AlGaInP MQWs to the WSe2 monolayer was observed to boost the WSe2 monolayer emissions. The voltage dependence of the electroluminescence intensity was characterized. Electroluminescence intensity-voltage characteristic curves indicated that thermionic emission was the mechanism underlying carrier injection across the potential barrier at the Ag-WSe2 monolayer interface at low voltage, whereas Fowler-Nordheim emission was the mechanism at voltages higher than approximately 8.0 V. These multi-color hybrid light-emitting devices both expand the wavelength range of 2-D TMDC-based light emitters and support their implementation in applications such as chip-scale optoelectronic integrated systems, broad-band LEDs, and quantum display systems.
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Affiliation(s)
- Ya-Hui Chang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yen-Shou Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Konthoujam James Singh
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Hsiang-Ting Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
| | - Chiao-Yun Chang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202301, Taiwan
| | - Zheng-Zhe Chen
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Physics, National Taiwan University, Taipei, Taiwan, Taipei 10617, Taiwan
| | - Yu-Wei Zhang
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Shih-Yen Lin
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Hao-Chung Kuo
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Min-Hsiung Shih
- Research Center for Applied Sciences (RCAS), Academia Sinica, Taipei 11529, Taiwan.
- Department of Photonics and Institute of Electro-Optical Engineering, College of Electrical and Computer Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
- Department of Photonics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
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19
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Moon S, Kim J, Park J, Im S, Kim J, Hwang I, Kim JK. Hexagonal Boron Nitride for Next-Generation Photonics and Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204161. [PMID: 35735090 DOI: 10.1002/adma.202204161] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Revised: 06/14/2022] [Indexed: 06/15/2023]
Abstract
Hexagonal boron nitride (h-BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h-BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of structural and optical properties of h-BN have expanded potential applications into emerging electronics and photonics fields. h-BN shows a very efficient deep-ultraviolet band-edge emission despite its indirect-bandgap nature, as well as stable room-temperature single-photon emission over a wide wavelength range, showing a great potential for next-generation photonics. In addition, h-BN is extensively being adopted as active media for low-energy electronics, including nonvolatile resistive switching memory, radio-frequency devices, and low-dielectric-constant materials for next-generation electronics.
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Affiliation(s)
- Seokho Moon
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jiye Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jeonghyeon Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Semi Im
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jawon Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Inyong Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jong Kyu Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
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20
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Hu Q, Zhu S, Gu C, Liu S, Zeng M, Wu Y. Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress. SCIENCE ADVANCES 2022; 8:eade4075. [PMID: 36563154 PMCID: PMC9788755 DOI: 10.1126/sciadv.ade4075] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/14/2022] [Accepted: 11/22/2022] [Indexed: 06/17/2023]
Abstract
Flexible radio frequency (RF) transistors play an important role in the fast-growing wearable smart sensors for data communication. However, the scaling capability and high-speed performance of the flexible transistor are far below the counterparts on rigid substrates, impeding the gigahertz high-speed applications. Here, we address the scaling and performance bottlenecks in flexible transistors by demonstrating natively flexible RF indium tin oxide transistors with deeply scaled 15-nm-long channel, capable of operating in the 10-GHz frequency range. The record-high cutoff frequency of 11.8 GHz and maximum oscillation frequency of 15 GHz can rival those on rigid substrates. Furthermore, the robustness of flexible RF transistors was examined, capable of enduring heavy-duty 10,000 bending cycles at 1-mm radius and extreme thermal stress from cryogenic temperature of 4.3 K and high temperature of 380 K.
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Affiliation(s)
- Qianlan Hu
- School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Shenwu Zhu
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Chengru Gu
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Shiyuan Liu
- School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Min Zeng
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Yanqing Wu
- School of Integrated Circuits, Peking University, Beijing 100871, China
- Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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21
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Wang H, Xu X, Shaymurat T. Effect of Different Solvents on Morphology and Gas-Sensitive Properties of Grinding-Assisted Liquid-Phase-Exfoliated MoS 2 Nanosheets. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4485. [PMID: 36558338 PMCID: PMC9784282 DOI: 10.3390/nano12244485] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/10/2022] [Revised: 12/11/2022] [Accepted: 12/15/2022] [Indexed: 06/17/2023]
Abstract
Grinding-assisted liquid-phase exfoliation is a widely used method for the preparation of two-dimensional nanomaterials. In this study, N-methylpyrrolidone and acetonitrile, two common grinding solvents, were used during the liquid-phase exfoliation for the preparation of MoS2 nanosheets. The morphology and structure of MoS2 nanosheets were analyzed via scanning electron microscopy, X-ray diffraction, and Raman spectroscopy. The effects of grinding solvents on the gas-sensing performance of the MoS2 nanosheets were investigated for the first time. The results show that the sensitivities of MoS2 nanosheet exfoliation with N-methylpyrrolidone were 2.4-, 1.4-, 1.9-, and 2.7-fold higher than exfoliation with acetonitrile in the presence of formaldehyde, acetone, and ethanol and 98% relative humidity, respectively. MoS2 nanosheet exfoliation with N-methylpyrrolidone also has fast response and recovery characteristics to 50-1000 ppm of CH2O. Accordingly, although N-methylpyrrolidone cannot be removed completely from the surface of MoS2, it has good gas sensitivity compared with other samples. Therefore, N-methylpyrrolidone is preferred for the preparation of gas-sensitive MoS2 nanosheets in grinding-assisted liquid-phase exfoliation. The results provide an experimental basis for the preparation of two-dimensional materials and their application in gas sensors.
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Affiliation(s)
- Hao Wang
- Key Laboratory of New Energy and Materials Research, Xinjiang Institute of Engineering, Urumqi 830023, China
- Xinjiang Condensed Matter Phase Transition and Microstructure Laboratory, College of Physics Science and Technology, Yili Normal University, Yining 835000, China
| | - Xiaojie Xu
- Key Laboratory of New Energy and Materials Research, Xinjiang Institute of Engineering, Urumqi 830023, China
- Xinjiang Condensed Matter Phase Transition and Microstructure Laboratory, College of Physics Science and Technology, Yili Normal University, Yining 835000, China
| | - Talgar Shaymurat
- Key Laboratory of New Energy and Materials Research, Xinjiang Institute of Engineering, Urumqi 830023, China
- Xinjiang Condensed Matter Phase Transition and Microstructure Laboratory, College of Physics Science and Technology, Yili Normal University, Yining 835000, China
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22
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Wang S, Liu X, Xu M, Liu L, Yang D, Zhou P. Two-dimensional devices and integration towards the silicon lines. NATURE MATERIALS 2022; 21:1225-1239. [PMID: 36284239 DOI: 10.1038/s41563-022-01383-2] [Citation(s) in RCA: 58] [Impact Index Per Article: 29.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2022] [Accepted: 09/14/2022] [Indexed: 06/16/2023]
Abstract
Despite technical efforts and upgrades, advances in complementary metal-oxide-semiconductor circuits have become unsustainable in the face of inherent silicon limits. New materials are being sought to compensate for silicon deficiencies, and two-dimensional materials are considered promising candidates due to their atomically thin structures and exotic physical properties. However, a potentially applicable method for incorporating two-dimensional materials into silicon platforms remains to be illustrated. Here we try to bridge two-dimensional materials and silicon technology, from integrated devices to monolithic 'on-silicon' (silicon as the substrate) and 'with-silicon' (silicon as a functional component) circuits, and discuss the corresponding requirements for material synthesis, device design and circuitry integration. Finally, we summarize the role played by two-dimensional materials in the silicon-dominated semiconductor industry and suggest the way forward, as well as the technologies that are expected to become mainstream in the near future.
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Affiliation(s)
- Shuiyuan Wang
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Xiaoxian Liu
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, China
| | - Mingsheng Xu
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics & Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Liwei Liu
- Frontier Institute of Chip and System & Qizhi Institute, Fudan University, Shanghai, China
| | - Deren Yang
- State Key Laboratory of Silicon Materials, School of Micro-Nano Electronics & Materials Science and Engineering, Zhejiang University, Hangzhou, China
| | - Peng Zhou
- Shanghai Key Lab for Future Computing Hardware and System, School of Microelectronics, Fudan University, Shanghai, China.
- Frontier Institute of Chip and System & Qizhi Institute, Fudan University, Shanghai, China.
- Hubei Yangtze Memory Laboratories, Wuhan, China.
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23
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Wang L, Wang P, Huang J, Peng B, Jia C, Qian Q, Zhou J, Xu D, Huang Y, Duan X. A general one-step plug-and-probe approach to top-gated transistors for rapidly probing delicate electronic materials. NATURE NANOTECHNOLOGY 2022; 17:1206-1213. [PMID: 36266508 DOI: 10.1038/s41565-022-01221-1] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Accepted: 09/04/2022] [Indexed: 06/16/2023]
Abstract
The miniaturization of silicon-based electronics has motivated considerable efforts in exploring new electronic materials, including two-dimensional semiconductors and halide perovskites, which are usually too delicate to maintain their intrinsic properties during the harsh device fabrication steps. Here we report a convenient plug-and-probe approach for one-step simultaneous van der Waals integration of high-k dielectrics and contacts to enable top-gated transistors with atomically clean and electronically sharp dielectric and contact interfaces. By applying the plug-and-probe top-gate transistor stacks on two-dimensional semiconductors, we demonstrate an ideal subthreshold swing of 60 mV per decade. Using this approach on delicate lead halide perovskite, we realize a high-k top-gate CsPbBr3 transistor with a low operating voltage and a very high two-terminal field-effect mobility of 32 cm2 V-1 s-1. This approach can be extended to centimetre-scale MoS2 and perovskite and generate top-gated transistor arrays, offering a rapid and convenient way of accessing intrinsic properties of delicate emerging materials.
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Affiliation(s)
- Laiyuan Wang
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA
| | - Peiqi Wang
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA
| | - Jin Huang
- Department of Material Science and Engineering, University of California, Los Angeles, Los Angeles, CA, USA
| | - Bosi Peng
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA
| | - Chuancheng Jia
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA
| | - Qi Qian
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA
| | - Jingyuan Zhou
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA
| | - Dong Xu
- Department of Material Science and Engineering, University of California, Los Angeles, Los Angeles, CA, USA
| | - Yu Huang
- Department of Material Science and Engineering, University of California, Los Angeles, Los Angeles, CA, USA
- California Nanosystems Institute (CNSI), University of California, Los Angeles, Los Angeles, CA, USA
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA.
- California Nanosystems Institute (CNSI), University of California, Los Angeles, Los Angeles, CA, USA.
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24
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Wei T, Han Z, Zhong X, Xiao Q, Liu T, Xiang D. Two dimensional semiconducting materials for ultimately scaled transistors. iScience 2022; 25:105160. [PMID: 36204270 PMCID: PMC9529977 DOI: 10.1016/j.isci.2022.105160] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022] Open
Abstract
Two dimensional (2D) semiconductors have been established as promising candidates to break through the short channel effect that existed in Si metal-oxide-semiconductor field-effect-transistor (MOSFET), owing to their unique atomically layered structure and dangling-bond-free surface. The last decade has witnessed the significant progress in the size scaling of 2D transistors by various approaches, in which the physical gate length of the transistors has shrank from micrometer to sub-one nanometer with superior performance, illustrating their potential as a replacement technology for Si MOSFETs. Here, we review state-of-the-art techniques to achieve ultra-scaled 2D transistors with novel configurations through the scaling of channel, gate, and contact length. We provide comprehensive views of the merits and drawbacks of the ultra-scaled 2D transistors by summarizing the relevant fabrication processes with the corresponding critical parameters achieved. Finally, we identify the key opportunities and challenges for integrating ultra-scaled 2D transistors in the next-generation heterogeneous circuitry.
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Affiliation(s)
- Tianyao Wei
- Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China
- Frontier Institute of Chip and System, Fudan University, Shanghai 200438, People’s Republic of China
| | - Zichao Han
- Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China
| | - Xinyi Zhong
- Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
| | - Qingyu Xiao
- Department of Materials Science, Fudan University, Shanghai 200433, People’s Republic of China
| | - Tao Liu
- Institute of Optoelectronics, Fudan University, Shanghai 200438, People’s Republic of China
- Zhangjiang Fudan International Innovation Centre, Fudan University, Shanghai 200438, People’s Republic of China
- Corresponding author
| | - Du Xiang
- Frontier Institute of Chip and System, Fudan University, Shanghai 200438, People’s Republic of China
- Zhangjiang Fudan International Innovation Centre, Fudan University, Shanghai 200438, People’s Republic of China
- Shanghai Qi Zhi Institute, Shanghai 200232, People’s Republic of China
- Corresponding author
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25
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Shi Q, Aziz I, Ciou JH, Wang J, Gao D, Xiong J, Lee PS. Al 2O 3/HfO 2 Nanolaminate Dielectric Boosting IGZO-Based Flexible Thin-Film Transistors. NANO-MICRO LETTERS 2022; 14:195. [PMID: 36165917 PMCID: PMC9515270 DOI: 10.1007/s40820-022-00929-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2022] [Accepted: 07/30/2022] [Indexed: 06/16/2023]
Abstract
HIGHLIGHTS A stable laminated Al2O3/HfO2 insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C. The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al2O3/HfO2 insulator. The flexible TFTs present the carrier mobilities of 9.7 cm2 V−1 s−1, ON/OFF ratio of ~ 1.3 × 106, subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec−1. ABSTRACT Flexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. Here, we develop a stable laminated Al2O3/HfO2 insulator by atomic layer deposition at a relatively lower temperature of 150 °C. A sputtered amorphous indium-gallium-zinc oxide (IGZO) with the stoichiometry of In0.37Ga0.20Zn0.18O0.25 is used as the active channel material. The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al2O3/HfO2 nanolaminates. Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al2O3, crystallized HfO2, and the aluminate Al–Hf–O phase, the as-prepared TFTs present the carrier mobilities of 9.7 cm2 V−1 s−1, ON/OFF ratio of ~ 1.3 × 106, subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec−1, signifying a high-performance flexible TFT, which simultaneously able to withstand the bending radius of 40 mm. The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60–70%, a temperature of 25–30 °C environment. The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%. [Image: see text] SUPPLEMENTARY INFORMATION The online version contains supplementary material available at 10.1007/s40820-022-00929-y.
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Affiliation(s)
- Qiuwei Shi
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
- School of Chemistry and Materials Science, Nanjing University of Information Science and Technology, Nanjing, 210044, People's Republic of China
| | - Izzat Aziz
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Jin-Hao Ciou
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Jiangxin Wang
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Dace Gao
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Jiaqing Xiong
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Pooi See Lee
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
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26
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Wang C, Song Y, Huang H. Evolution Application of Two-Dimensional MoS 2-Based Field-Effect Transistors. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12183233. [PMID: 36145022 PMCID: PMC9504544 DOI: 10.3390/nano12183233] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2022] [Revised: 09/12/2022] [Accepted: 09/15/2022] [Indexed: 06/12/2023]
Abstract
High-performance and low-power field-effect transistors (FETs) are the basis of integrated circuit fields, which undoubtedly require researchers to find better film channel layer materials and improve device structure technology. MoS2 has recently shown a special two-dimensional (2D) structure and superior photoelectric performance, and it has shown new potential for next-generation electronics. However, the natural atomic layer thickness and large specific surface area of MoS2 make the contact interface and dielectric interface have a great influence on the performance of MoS2 FET. Thus, we focus on its main performance improvement strategies, including optimizing the contact behavior, regulating the conductive channel, and rationalizing the dielectric layer. On this basis, we summarize the applications of 2D MoS2 FETs in key and emerging fields, specifically involving logic, RF circuits, optoelectronic devices, biosensors, piezoelectric devices, and synaptic transistors. As a whole, we discuss the state-of-the-art, key merits, and limitations of each of these 2D MoS2-based FET systems, and prospects in the future.
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Affiliation(s)
- Chunlan Wang
- School of Science, Xi’an Polytechnic University, Xi’an 710048, China
| | - Yongle Song
- School of Science, Xi’an Polytechnic University, Xi’an 710048, China
| | - Hao Huang
- Guangxi Key Laboratory of Processing for Nonferrous Metals and Featured Material, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China
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27
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Zhang Q, Wang Y, Li D, Xie J, Tao R, Luo J, Dai X, Torun H, Wu Q, Ng WP, Binns R, Fu Y. Flexible multifunctional platform based on piezoelectric acoustics for human-machine interaction and environmental perception. MICROSYSTEMS & NANOENGINEERING 2022; 8:99. [PMID: 36119378 PMCID: PMC9474866 DOI: 10.1038/s41378-022-00402-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/11/2022] [Revised: 04/26/2022] [Accepted: 05/18/2022] [Indexed: 06/15/2023]
Abstract
Flexible human-machine interfaces show broad prospects for next-generation flexible or wearable electronics compared with their currently available bulky and rigid counterparts. However, compared to their rigid counterparts, most reported flexible devices (e.g., flexible loudspeakers and microphones) show inferior performance, mainly due to the nature of their flexibility. Therefore, it is of great significance to improve their performance by developing and optimizing new materials, structures and design methodologies. In this paper, a flexible acoustic platform based on a zinc oxide (ZnO) thin film on an aluminum foil substrate is developed and optimized; this platform can be applied as a loudspeaker, a microphone, or an ambient sensor depending on the selection of its excitation frequencies. When used as a speaker, the proposed structure shows a high sound pressure level (SPL) of ~90 dB (with a standard deviation of ~3.6 dB), a low total harmonic distortion of ~1.41%, and a uniform directivity (with a standard deviation of ~4 dB). Its normalized SPL is higher than those of similar devices reported in the recent literature. When used as a microphone, the proposed device shows a precision of 98% for speech recognition, and the measured audio signals show a strong similarity to the original audio signals, demonstrating its equivalent performance compared to a rigid commercial microphone. As a flexible sensor, this device shows a high temperature coefficient of frequency of -289 ppm/K and good performance for respiratory monitoring.
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Affiliation(s)
- Qian Zhang
- The State Key Laboratory of Fluid Power and Mechatronic Systems, Zhejiang University, 310027 Hangzhou, China
- Faculty of Engineering and Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST UK
| | - Yong Wang
- The State Key Laboratory of Fluid Power and Mechatronic Systems, Zhejiang University, 310027 Hangzhou, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, 310024 Hangzhou, China
| | - Dongsheng Li
- The State Key Laboratory of Fluid Power and Mechatronic Systems, Zhejiang University, 310027 Hangzhou, China
| | - Jin Xie
- The State Key Laboratory of Fluid Power and Mechatronic Systems, Zhejiang University, 310027 Hangzhou, China
| | - Ran Tao
- Key Laboratory of Optoelectronic Devices and Systems of Education Ministry and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060 Shenzhen, China
| | - Jingting Luo
- Key Laboratory of Optoelectronic Devices and Systems of Education Ministry and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, 518060 Shenzhen, China
| | - Xuewu Dai
- Faculty of Engineering and Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST UK
| | - Hamdi Torun
- Faculty of Engineering and Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST UK
| | - Qiang Wu
- Faculty of Engineering and Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST UK
| | - Wai Pang Ng
- Faculty of Engineering and Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST UK
| | - Richard Binns
- Faculty of Engineering and Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST UK
| | - YongQing Fu
- The State Key Laboratory of Fluid Power and Mechatronic Systems, Zhejiang University, 310027 Hangzhou, China
- Faculty of Engineering and Environment, University of Northumbria, Newcastle upon Tyne, NE1 8ST UK
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28
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Guo Y, Zhao Y, Zhou S, Zhao J. Oxidation behavior of layered Fe nGeTe 2 ( n = 3, 4, 5) and Cr 2Ge 2Te 6 governed by interlayer coupling. NANOSCALE 2022; 14:11452-11460. [PMID: 35904500 DOI: 10.1039/d2nr02375j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Layered magnetic materials have recently received tremendous attention due to an attractive combination of functional properties suitable for nanoelectronics and spintronic applications. Enhancing the air stability of the material is a prerequisite for long-term durability of devices. However, the oxidation mechanism of layered magnetic materials is yet to be revealed. Herein we explore the oxidation behavior of monolayer and multilayer FenGeTe2 (n = 3, 4, 5) and Cr2Ge2Te6 using first-principles calculations. The results show that these monolayer systems are prone to be oxidized in ambient air. With increasing thickness, however, multilayer FenGeTe2 exhibits distinct oxidation behavior from its monolayer counterparts, originating from its unexpected strong interlayer coupling characterized by wavefunction overlapping of adjacent Te atoms between FenGeTe2 layers. Moreover, O2 adsorption does not severely deteriorate the magnetism of layered FenGeTe2 and Cr2Ge2Te6. Given the fact that oxidation properties can be altered by interlayer coupling, our work opens a paradigm for obtaining oxidation-resistant layered materials.
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Affiliation(s)
- Yu Guo
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
| | - Yanyan Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
| | - Si Zhou
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
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29
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Beam steering at the nanosecond time scale with an atomically thin reflector. Nat Commun 2022; 13:3431. [PMID: 35701395 PMCID: PMC9198240 DOI: 10.1038/s41467-022-29976-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2022] [Accepted: 03/11/2022] [Indexed: 01/22/2023] Open
Abstract
Techniques to mold the flow of light on subwavelength scales enable fundamentally new optical systems and device applications. The realization of programmable, active optical systems with fast, tunable components is among the outstanding challenges in the field. Here, we experimentally demonstrate a few-pixel beam steering device based on electrostatic gate control of excitons in an atomically thin semiconductor with strong light-matter interactions. By combining the high reflectivity of a MoSe2 monolayer with a graphene split-gate geometry, we shape the wavefront phase profile to achieve continuously tunable beam deflection with a range of 10°, two-dimensional beam steering, and switching times down to 1.6 nanoseconds. Our approach opens the door for a new class of atomically thin optical systems, such as rapidly switchable beam arrays and quantum metasurfaces operating at their fundamental thickness limit. Andersen et al. have demonstrated a new type of beam steering device based on the excitonic response of an atomically thin semiconductor. Using electrostatic gates, the authors achieved tunable steering with switching times on the nanosecond scale.
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30
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Yim W, Nguyen VT, Phung QT, Kim HS, Ahn YH, Lee S, Park JY. Imaging Spatial Distribution of Photogenerated Carriers in Monolayer MoS 2 with Kelvin Probe Force Microscopy. ACS APPLIED MATERIALS & INTERFACES 2022; 14:26295-26302. [PMID: 35613454 DOI: 10.1021/acsami.2c06315] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The spatial distribution of photogenerated carriers in atomically thin MoS2 flakes is investigated by measuring surface potential changes under light illumination using Kelvin probe force microscopy (KPFM). It is demonstrated that the vertical redistribution of photogenerated carriers, which is responsible for photocurrent generation in MoS2 photodetectors, can be imaged as surface potential changes with KPFM. The polarity of surface potential changes points to the trapping of photogenerated holes at the interface between MoS2 and the substrate as a major mechanism for the photoresponse in monolayer MoS2. The temporal response of the surface potential changes is compatible with the time constant of MoS2 photodetectors. The spatial inhomogeneity in the surface potential changes at the low light intensity that is related to the defect distribution in MoS2 is also investigated.
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Affiliation(s)
- Woongbin Yim
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
| | - Van Tu Nguyen
- Institute of Materials Science, Vietnam Academy of Science and Technology, Hanoi 100000, Vietnam
| | - Quynh Thi Phung
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
| | - Hwan Sik Kim
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
| | - Yeong Hwan Ahn
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
| | - Soonil Lee
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
| | - Ji-Yong Park
- Department of Physics and Department of Energy Systems Research, Ajou University, Suwon 16499, Korea
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31
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Hight-Huf N, Pagaduan JN, Katsumata R, Emrick T, Barnes MD. Stabilization of Three-Particle Excitations in Monolayer MoS 2 by Fluorinated Methacrylate Polymers. J Phys Chem Lett 2022; 13:4794-4799. [PMID: 35613709 DOI: 10.1021/acs.jpclett.2c01150] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
While extrinsic factors, such as substrates and chemical doping, are known to strongly influence visible photoemission from monolayer MoS2, key fundamental knowledge for p-type polymeric dopants is lacking. We investigated perturbations to the electronic environment of 2D MoS2 using fluorinated polymer coatings and specifically studied stabilization of three-particle states by monitoring changes in intensities and emission maxima of three-particle and two-particle emissions. We calculated changes in carrier density and trion binding energy, the latter having an additional contribution from MoS2 polarization by the polymer. Polarization is further suggested by Kelvin probe force microscopy (KPFM) measurements of large Fermi level shifts. Changes similar in magnitude, but opposite in sign, were observed in 2D MoS2 coated with an analogous nonfluorinated polymer. These findings highlight the important interplay between electron exchange and electrostatic interactions at the interface between polymers and transition metal dichalcogenides (TMDCs), which govern fundamental electronic properties relevant to next-generation devices.
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32
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Wang Q, Tang J, Li X, Tian J, Liang J, Li N, Ji D, Xian L, Guo Y, Li L, Zhang Q, Chu Y, Wei Z, Zhao Y, Du L, Yu H, Bai X, Gu L, Liu K, Yang W, Yang R, Shi D, Zhang G. Layer-by-layer epitaxy of multi-layer MoS 2 wafers. Natl Sci Rev 2022; 9:nwac077. [PMID: 35769232 PMCID: PMC9232293 DOI: 10.1093/nsr/nwac077] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Accepted: 04/12/2022] [Indexed: 11/17/2022] Open
Abstract
The 2D semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon. So far, high-quality monolayer MoS2 wafers have been available and various demonstrations from individual transistors to integrated circuits have also been shown. In addition to the monolayer, multilayers have narrower band gaps but improved carrier mobilities and current capacities over the monolayer. However, achieving high-quality multi-layer MoS2 wafers remains a challenge. Here we report the growth of high-quality multi-layer MoS2 4-inch wafers via the layer-by-layer epitaxy process. The epitaxy leads to well-defined stacking orders between adjacent epitaxial layers and offers a delicate control of layer numbers up to six. Systematic evaluations on the atomic structures and electronic properties were carried out for achieved wafers with different layer numbers. Significant improvements in device performances were found in thicker-layer field-effect transistors (FETs), as expected. For example, the average field-effect mobility (μFE) at room temperature (RT) can increase from ∼80 cm2·V–1·s–1 for monolayers to ∼110/145 cm2·V–1·s–1 for bilayer/trilayer devices. The highest RT μFE of 234.7 cm2·V–1·s–1 and record-high on-current densities of 1.70 mA·μm–1 at Vds = 2 V were also achieved in trilayer MoS2 FETs with a high on/off ratio of >107. Our work hence moves a step closer to practical applications of 2D MoS2 in electronics.
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Affiliation(s)
- Qinqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jian Tang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiaomei Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jinpeng Tian
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jing Liang
- Collaborative Innovation Center of Quantum Matter and School of Physics, Peking University, Beijing 100871, China
| | - Na Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Depeng Ji
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Lede Xian
- Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - Yutuo Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lu Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yanbang Chu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zheng Wei
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Yanchong Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Hua Yu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Kaihui Liu
- Collaborative Innovation Center of Quantum Matter and School of Physics, Peking University, Beijing 100871, China
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Rong Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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33
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Paul S, Torsi R, Robinson JA, Momeni K. Effect of the Substrate on MoS 2 Monolayer Morphology: An Integrated Computational and Experimental Study. ACS APPLIED MATERIALS & INTERFACES 2022; 14:18835-18844. [PMID: 35421302 DOI: 10.1021/acsami.2c03471] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Synthesis of two-dimensional materials, specifically transition metal dichalcogenides (TMDs), with controlled lattice orientations is a major barrier to their industrial applications. Controlling the orientation of as-grown TMDs is critical for preventing the formation of grain boundaries, thus reaching their maximum mechanical and optoelectronic performance. Here, we investigated the role of the substrate's crystallinity in the growth orientation of 2D materials using reactive molecular dynamics (MD) simulations and verified with experimental growth using the chemical vapor deposition (CVD) technique. We considered MoS2 as our model material and investigated its growth on crystalline and amorphous silica and sapphire substrates. We revealed the role of the substrate's energy landscape on the orientation of as-grown TMDs, where the presence of monolayer-substrate energy barriers perpendicular to the streamlines hinder the detachment of precursor nuclei from the substrate. We show that MoS2 monolayers with controlled orientations could not be grown on the SiO2 substrate and revealed that amorphization of the substrate changes the intensity and equilibrium distance of monolayer-substrate interactions. Our simulations indicate that 0° rotated MoS2 is the most favorable configuration on a sapphire substrate, consistent with our experimental results. The experimentally validated computational results and insight presented in this study pave the way for the high-quality synthesis of TMDs for high-performance electronic and optoelectronic devices.
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Affiliation(s)
- Shiddartha Paul
- Department of Mechanical Engineering, The University of Alabama, Tuscaloosa, Alabama 35401, United States
| | - Riccardo Torsi
- 2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A Robinson
- 2D Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2D and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Kasra Momeni
- Department of Mechanical Engineering, The University of Alabama, Tuscaloosa, Alabama 35401, United States
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34
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Ma S, Wu T, Chen X, Wang Y, Tang H, Yao Y, Wang Y, Zhu Z, Deng J, Wan J, Lu Y, Sun Z, Xu Z, Riaud A, Wu C, Zhang DW, Chai Y, Zhou P, Ren J, Bao W. An artificial neural network chip based on two-dimensional semiconductor. Sci Bull (Beijing) 2022; 67:270-277. [PMID: 36546076 DOI: 10.1016/j.scib.2021.10.005] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/01/2021] [Revised: 08/16/2021] [Accepted: 09/27/2021] [Indexed: 01/06/2023]
Abstract
Recently, research on two-dimensional (2D) semiconductors has begun to translate from the fundamental investigation into rudimentary functional circuits. In this work, we unveil the first functional MoS2 artificial neural network (ANN) chip, including multiply-and-accumulate (MAC), memory and activation function circuits. Such MoS2 ANN chip is realized through fabricating 818 field-effect transistors (FETs) on a wafer-scale and high-homogeneity MoS2 film, with a gate-last process to realize top gate structured FETs. A 62-level simulation program with integrated circuit emphasis (SPICE) model is utilized to design and optimize our analog ANN circuits. To demonstrate a practical application, a tactile digit sensing recognition was demonstrated based on our ANN circuits. After training, the digit recognition rate exceeds 97%. Our work not only demonstrates the protentional of 2D semiconductors in wafer-scale integrated circuits, but also paves the way for its future application in AI computation.
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Affiliation(s)
- Shunli Ma
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Tianxiang Wu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Xinyu Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yin Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Hongwei Tang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yuting Yao
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yan Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Ziyang Zhu
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Jianan Deng
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Jing Wan
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Ye Lu
- State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
| | - Zhengzong Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Zihan Xu
- Shenzhen Sixcarbon Technology, Shenzhen 518106, China
| | - Antoine Riaud
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Chenjian Wu
- School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Junyan Ren
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Wenzhong Bao
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
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35
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 111] [Impact Index Per Article: 55.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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36
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Cui F, Zhao X, Tang B, Zhu L, Huan Y, Chen Q, Liu Z, Zhang Y. Epitaxial Growth of Step-Like Cr 2 S 3 Lateral Homojunctions Towards Versatile Conduction Polarities and Enhanced Transistor Performances. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105744. [PMID: 34837337 DOI: 10.1002/smll.202105744] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2021] [Revised: 10/17/2021] [Indexed: 06/13/2023]
Abstract
For expanding the applications of 2D transition metal dichalcogenides (TMDCs), integrating functional devices with diverse conduction polarities in the same parent material is a very promising direction. Improving the contact issue at the metal-semiconductor interface also holds fundamental significance. To achieve these concurrently, step-like Cr2 S3 vertical stacks with varied thicknesses are achieved via a one-step chemical vapor deposition (CVD) method route. Various types of 2D Cr2 S3 lateral homojunctions are thus naturally evolved, that is, pm -ambipolar/n, p/ambipolar, ambipolar/n, and nm -ambipolar/n junctions, allowing the integration of diverse conduction polarities in single Cr2 S3 homojunctions. Significantly, on-state current density and field-effect mobility of the thinner 2D Cr2 S3 flakes stacked below are detected to be ≈5 and ≈6 times increased in the lateral homojunctions, respectively. This work should hereby provide insights for designing 2D functional devices with simpler structures, for example, multipolar field-effect transistors, photodetectors, and inverters, and provide fundamental references for optimizing the electrical performances of 2D materials related devices.
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Affiliation(s)
- Fangfang Cui
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Bin Tang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Lijie Zhu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Yahuan Huan
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Qing Chen
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
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37
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High-Yield Production of Selected 2D Materials by Understanding Their Sonication-Assisted Liquid-Phase Exfoliation. NANOMATERIALS 2021; 11:nano11123253. [PMID: 34947601 PMCID: PMC8705847 DOI: 10.3390/nano11123253] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/19/2021] [Revised: 11/04/2021] [Accepted: 11/26/2021] [Indexed: 01/17/2023]
Abstract
Liquid-phase exfoliation (LPE) is a widely used and promising method for the production of 2D nanomaterials because it can be scaled up relatively easily. Nevertheless, the yields achieved by this process are still low, ranging between 2% and 5%, which makes the large-scale production of these materials difficult. In this report, we investigate the cause of these low yields by examining the sonication-assisted LPE of graphene, boron nitride nanosheets (BNNSs), and molybdenum disulfide nanosheets (MoS2 NS). Our results show that the low yields are caused by an equilibrium that is formed between the exfoliated nanosheets and the flocculated ones during the sonication process. This study provides an understanding of this behaviour, which prevents further exfoliation of nanosheets. By avoiding this equilibrium, we were able to increase the total yields of graphene, BNNSs, and MoS2 NS up to 14%, 44%, and 29%, respectively. Here, we demonstrate a modified LPE process that leads to the high-yield production of 2D nanomaterials.
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38
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Hight-Huf N, Nagar Y, Levi A, Pagaduan JN, Datar A, Katsumata R, Emrick T, Ramasubramaniam A, Naveh D, Barnes MD. Polarization-Driven Asymmetric Electronic Response of Monolayer Graphene to Polymer Zwitterions Probed from Both Sides. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47945-47953. [PMID: 34607423 DOI: 10.1021/acsami.1c13505] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We investigated the nature of graphene surface doping by zwitterionic polymers and the implications of weak in-plane and strong through-plane screening using a novel sample geometry that allows direct access to either the graphene or the polymer side of a graphene/polymer interface. Using both Kelvin probe and electrostatic force microscopies, we observed a significant upshift in the Fermi level in graphene of ∼260 meV that was dominated by a change in polarizability rather than pure charge transfer with the organic overlayer. This physical picture is supported by density functional theory (DFT) calculations, which describe a redistribution of charge in graphene in response to the dipoles of the adsorbed zwitterionic moieties, analogous to a local DC Stark effect. Strong metallic-like screening of the adsorbed dipoles was observed by employing an inverted geometry, an effect identified by DFT to arise from a strongly asymmetric redistribution of charge confined to the side of graphene proximal to the zwitterion dipoles. Transport measurements confirm n-type doping with no significant impact on carrier mobility, thus demonstrating a route to desirable electronic properties in devices that combine graphene with lithographically patterned polymers.
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Affiliation(s)
- Nicholas Hight-Huf
- Department of Chemistry, University of Massachusetts, Amherst, Massachusetts 01003, United States
| | - Yehiel Nagar
- Faculty of Engineering and Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel
| | - Adi Levi
- Faculty of Engineering and Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel
| | - James Nicolas Pagaduan
- Polymer Science and Engineering Department, University of Massachusetts, Amherst, Massachusetts 01003, United States
| | - Avdhoot Datar
- Department of Mechanical and Industrial Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States
| | - Reika Katsumata
- Polymer Science and Engineering Department, University of Massachusetts, Amherst, Massachusetts 01003, United States
| | - Todd Emrick
- Polymer Science and Engineering Department, University of Massachusetts, Amherst, Massachusetts 01003, United States
| | - Ashwin Ramasubramaniam
- Department of Mechanical and Industrial Engineering, University of Massachusetts, Amherst, Massachusetts 01003, United States
| | - Doron Naveh
- Faculty of Engineering and Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan 52900, Israel
| | - Michael D Barnes
- Department of Chemistry, University of Massachusetts, Amherst, Massachusetts 01003, United States
- Department of Physics, University of Massachusetts, Amherst, Massachusetts 01003, United States
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39
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Zou X, Zou J, Liu L, Wang H, Xu JP. MoS 2transistors gated by ferroelectric HfZrO 2with MoS 2/mica heterojunction interface. NANOTECHNOLOGY 2021; 32:495201. [PMID: 34438387 DOI: 10.1088/1361-6528/ac2191] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2021] [Accepted: 08/26/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) molybdenum disulfide (MoS2) field-effect transistor (FET) gated by negative capacitance (NC) is a promising architecture to overcome the thermionic limit and thus reduce device consumption. Here, top-gated MoS2NCFETs have been prepared by transferring a mica flake on MoS2channel to form a van der Waals heterojunction interface, together with a ferroelectric HfZrO2(HZO) deposited on mica. Stable NC effects are demonstrated for MoS2NCFETs. The MoS2NCFETs integrated with mica/HZO gate stack provide competitive electrical characteristics when they are applied with a gate voltage sweep-width in the range of 1-3 V and a sweep-rate from 0.01 to 0.2 V s-1, including steep-slope of sub 60 mV dec-1in four orders of magnitude of drain current, on/off current ratio over 106, and small hysteresis-width less than 50 mV. Outstanding performance should be ascribed to damage-free properties of mica/MoS2van der Waals interface and capacitance matching between the HZO ferroelectric and mica dielectric. The results confirm the promising nature of mica/HZO gate stack and potential applications for future electronics.
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Affiliation(s)
- Xiao Zou
- School of Intelligent Manufacturing, Jianghan University, Wuhan 430056, People's Republic of China
| | - Jiyue Zou
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Lu Liu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Hongjiu Wang
- School of Intelligent Manufacturing, Jianghan University, Wuhan 430056, People's Republic of China
| | - Jing-Ping Xu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
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40
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Jmai B, Silva V, Mendes PM. 2D Electronics Based on Graphene Field Effect Transistors: Tutorial for Modelling and Simulation. MICROMACHINES 2021; 12:979. [PMID: 34442601 PMCID: PMC8398121 DOI: 10.3390/mi12080979] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/28/2021] [Revised: 08/15/2021] [Accepted: 08/16/2021] [Indexed: 11/17/2022]
Abstract
This paper provides modeling and simulation insights into field-effect transistors based on graphene (GFET), focusing on the devices' architecture with regards to the position of the gate (top-gated graphene transistors, back-gated graphene transistors, and top-/back-gated graphene transistors), substrate (silicon, silicon carbide, and quartz/glass), and the graphene growth (CVD, CVD on SiC, and mechanical exfoliation). These aspects are explored and discussed in order to facilitate the selection of the appropriate topology for system-level design, based on the most common topologies. Since most of the GFET models reported in the literature are complex and hard to understand, a model of a GFET was implemented and made available in MATLAB, Verilog in Cadence, and VHDL-AMS in Simplorer-useful tools for circuit designers with different backgrounds. A tutorial is presented, enabling the researchers to easily implement the model to predict the performance of their devices. In short, this paper aims to provide the initial knowledge and tools for researchers willing to use GFETs in their designs at the system level, who are looking to implement an initial setup that allows the inclusion of the performance of GFETs.
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Affiliation(s)
| | | | - Paulo M. Mendes
- CMEMS-UMinho, University of Minho, 4800-058 Guimarães, Portugal; (B.J.); (V.S.)
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41
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Shrivastava M, Ramgopal Rao V. A Roadmap for Disruptive Applications and Heterogeneous Integration Using Two-Dimensional Materials: State-of-the-Art and Technological Challenges. NANO LETTERS 2021; 21:6359-6381. [PMID: 34342450 DOI: 10.1021/acs.nanolett.1c00729] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
This Mini Review attempts to establish a roadmap for two-dimensional (2D) material-based microelectronic technologies for future/disruptive applications with a vision for the semiconductor industry to enable a universal technology platform for heterogeneous integration. The heterogeneous integration would involve integrating orthogonal capabilities, such as different forms of computing (classical, neuromorphic, and quantum), all forms of sensing, digital and analog memories, energy harvesting, and so forth, all in a single chip using a universal technology platform. We have reviewed the state-of-the-art 2D materials such as graphene, transition metal dichalcogenides, phosphorene and hexagonal boron nitride, and so forth, and how they offer unique possibilities for a range of futuristic/disruptive applications. Besides, we have discussed the technological and fundamental challenges in enabling such a universal technology platform, where the world stands today, and what gaps are required to be filled.
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Affiliation(s)
- Mayank Shrivastava
- Department of Electronic Systems Engineering, Indian Institute of Science, Bangalore 560012, India
| | - V Ramgopal Rao
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 40076, India
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42
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Mahlouji R, Zhang Y, Verheijen MA, Hofmann JP, Kessels WMM, Sagade AA, Bol AA. On the Contact Optimization of ALD-Based MoS 2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performance. ACS APPLIED ELECTRONIC MATERIALS 2021; 3:3185-3199. [PMID: 34337417 PMCID: PMC8320240 DOI: 10.1021/acsaelm.1c00379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/23/2021] [Accepted: 06/11/2021] [Indexed: 06/13/2023]
Abstract
Despite the extensive ongoing research on MoS2 field effect transistors (FETs), the key role of device processing conditions in the chemistry involved at the metal-to-MoS2 interface and their influence on the electrical performance are often overlooked. In addition, the majority of reports on MoS2 contacts are based on exfoliated MoS2, whereas synthetic films are even more susceptible to the changes made in device processing conditions. In this paper, working FETs with atomic layer deposition (ALD)-based MoS2 films and Ti/Au contacts are demonstrated, using current-voltage (I-V) characterization. In pursuit of optimizing the contacts, high-vacuum thermal annealing as well as O2/Ar plasma cleaning treatments are introduced, and their influence on the electrical performance is studied. The electrical findings are linked to the interface chemistry through X-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM) analyses. XPS evaluation reveals that the concentration of organic residues on the MoS2 surface, as a result of resist usage during the device processing, is significant. Removal of these contaminations with O2/Ar plasma changes the MoS2 chemical state and enhances the MoS2 electrical properties. Based on the STEM analysis, the observed progress in the device electrical characteristics could also be associated with the formation of a continuous TiS x layer at the Ti-to-MoS2 interface. Scaling down the Ti interlayer thickness and replacing it with Cr is found to be beneficial as well, leading to further device performance advancements. Our findings are of value for attaining optimal contacts to synthetic MoS2 films.
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Affiliation(s)
- Reyhaneh Mahlouji
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands
| | - Yue Zhang
- Laboratory
of Inorganic Materials and Catalysis, Department of Chemical Engineering
and Chemistry, Eindhoven University of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands
| | - Marcel A. Verheijen
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands
- Eurofins
Materials Science, High
Tech Campus 11, Eindhoven 5656 AE, The Netherlands
| | - Jan P. Hofmann
- Laboratory
of Inorganic Materials and Catalysis, Department of Chemical Engineering
and Chemistry, Eindhoven University of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands
- Surface
Science Laboratory, Department of Materials and Earth Sciences, Technical University of Darmstadt, Otto-Berndt-Strasse 3, Darmstadt 64287, Germany
| | - Wilhelmus M. M. Kessels
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands
| | - Abhay A. Sagade
- Laboratory
for Advanced Nanoelectronic Devices, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, SRM Nagar, Kattankulathur 603 203, Tamil Nadu, India
| | - Ageeth A. Bol
- Department
of Applied Physics, Eindhoven University
of Technology, P.O. Box 513, Eindhoven 5600 MB, The Netherlands
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43
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Schriber EA, Rosenberg DJ, Kelly RP, Ghodsi A, Hohman JN. Investigation of Nucleation and Growth at a Liquid-Liquid Interface by Solvent Exchange and Synchrotron Small-Angle X-Ray Scattering. Front Chem 2021; 9:593637. [PMID: 34354977 PMCID: PMC8329353 DOI: 10.3389/fchem.2021.593637] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/12/2020] [Accepted: 05/27/2021] [Indexed: 11/24/2022] Open
Abstract
Hybrid nanomaterials possess complex architectures that are driven by a self-assembly process between an inorganic element and an organic ligand. The properties of these materials can often be tuned by organic ligand variation, or by swapping the inorganic element. This enables the flexible fabrication of tailored hybrid materials with a rich variety of properties for technological applications. Liquid-liquid interfaces are useful for synthesizing these compounds as precursors can be segregated and allowed to interact only at the interface. Although procedurally straightforward, this is a complex reaction in an environment that is not easy to probe. Here, we explore the interfacial crystallization of mithrene, a supramolecular multi-quantum well. This material sandwiches a well-defined silver-chalcogenide layer between layers of organic ligands. Controlling mithrene crystal size and morphology to be useful for applications requires understanding details of its crystal growth, but the specific mechanism for this reaction remain only lightly investigated. We performed a study of mithrene crystallization at an oil-water interfaces to elucidate how the interfacial free energy affects nucleation and growth. We exchanged the oil solvent on the basis of solvent viscosity and surface tension, modifying the dynamic contact angle and interfacial free energy. We isolated and characterized the reaction byproducts via scanning electron microscopy (SEM). We also developed a high-throughput small angle X-ray scattering (SAXS) technique to measure crystallization at short reaction timescales (minutes). Our results showed that modifying interfacial surface energy affects both the reaction kinetics and product size homogeneity and yield. Our SAXS measurements reveal the onset of crystallinity after only 15 min. These results provide a template for exploring directed synthesis of complex materials via experimental methods.
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Affiliation(s)
- Elyse A. Schriber
- Institute of Materials Science and Department of Chemistry, University of Connecticut, Storrs, CT, United States
| | - Daniel J. Rosenberg
- Molecular Biophysics and Integrated Bioimaging Division, Lawrence Berkeley National Laboratory, Berkeley, CA, United States
- Biophysics Group, University of California, Berkeley, Berkeley, CA, United States
| | - Ryan P. Kelly
- Institute of Materials Science and Department of Chemistry, University of Connecticut, Storrs, CT, United States
| | - Anita Ghodsi
- Institute of Materials Science and Department of Chemistry, University of Connecticut, Storrs, CT, United States
| | - J. Nathan Hohman
- Institute of Materials Science and Department of Chemistry, University of Connecticut, Storrs, CT, United States
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44
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Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS 2 Transistors. NANOMATERIALS 2021; 11:nano11061594. [PMID: 34204492 PMCID: PMC8235638 DOI: 10.3390/nano11061594] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/30/2021] [Revised: 06/14/2021] [Accepted: 06/15/2021] [Indexed: 11/17/2022]
Abstract
As an atomically thin semiconductor, 2D molybdenum disulfide (MoS2) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency characteristics of MoS2 RF transistors, the impact of the back-gate bias on dual-gate MoS2 RF transistors is still unexplored. In this work, we study the effect of back-gate control on the static and RF performance metrics of MoS2 high-frequency transistors. By using high-quality chemical vapor deposited bilayer MoS2 as channel material, high-performance top-gate transistors with on/off ratio of 107 and on-current up to 179 μA/μm at room temperature were realized. With the back-gate modulation, the source and drain contact resistances decrease to 1.99 kΩ∙μm at Vbg = 3 V, and the corresponding on-current increases to 278 μA/μm. Furthermore, both cut-off frequency and maximum oscillation frequency improves as the back-gate voltage increases to 3 V. In addition, a maximum intrinsic fmax of 29.7 GHz was achieved, which is as high as 2.1 times the fmax without the back-gate bias. This work provides significant insights into the influence of back-gate voltage on MoS2 RF transistors and presents the potential of dual-gate MoS2 RF transistors for future high-frequency applications.
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45
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Mao Y, Guo Z, Yuan J, Sun T. 1D/2D van der Waals Heterojunctions Composed of Carbon Nanotubes and a GeSe Monolayer. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1565. [PMID: 34198617 PMCID: PMC8232292 DOI: 10.3390/nano11061565] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/07/2021] [Revised: 06/03/2021] [Accepted: 06/05/2021] [Indexed: 01/22/2023]
Abstract
Based on first-principles calculations, we propose van der Waals (vdW) heterojunctions composed of one-dimensional carbon nanotubes (CNTs) and two-dimensional GeSe. Our calculations show that (n,0)CNT/GeSe (n = 5-11) heterojunctions are stable through weak vdW interactions. Among these heterojunctions, (n,0)CNT/GeSe (n = 5-7) exhibit metallic properties, while (n,0)CNT/GeSe (n = 8-11) have a small bandgap, lower than 0.8 eV. The absorption coefficient of (n,0)CNT/GeSe (n = 8-11) in the ultraviolet and infrared regions is around 105 cm-1. Specifically, we found that (11,0)CNT/GeSe exhibits type-II band alignment and has a high photoelectric conversion efficiency of 17.29%, which suggests prospective applications in photoelectronics.
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Affiliation(s)
- Yuliang Mao
- Hunan Key Laboratory for Micro–Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan 411105, China;
| | - Zheng Guo
- Hunan Key Laboratory for Micro–Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan 411105, China;
| | - Jianmei Yuan
- Hunan Key Laboratory for Computation and Simulation in Science and Engineering, School of Mathematics and Computational Science, Xiangtan University, Xiangtan 411105, China;
| | - Tao Sun
- Hunan Key Laboratory for Computation and Simulation in Science and Engineering, School of Mathematics and Computational Science, Xiangtan University, Xiangtan 411105, China;
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46
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Hong S, Zagni N, Choo S, Liu N, Baek S, Bala A, Yoo H, Kang BH, Kim HJ, Yun HJ, Alam MA, Kim S. Highly sensitive active pixel image sensor array driven by large-area bilayer MoS 2 transistor circuitry. Nat Commun 2021; 12:3559. [PMID: 34117235 PMCID: PMC8196169 DOI: 10.1038/s41467-021-23711-x] [Citation(s) in RCA: 37] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2021] [Accepted: 05/10/2021] [Indexed: 02/05/2023] Open
Abstract
Various large-area growth methods for two-dimensional transition metal dichalcogenides have been developed recently for future electronic and photonic applications. However, they have not yet been employed for synthesizing active pixel image sensors. Here, we report on an active pixel image sensor array with a bilayer MoS2 film prepared via a two-step large-area growth method. The active pixel of image sensor is composed of 2D MoS2 switching transistors and 2D MoS2 phototransistors. The maximum photoresponsivity (Rph) of the bilayer MoS2 phototransistors in an 8 × 8 active pixel image sensor array is statistically measured as high as 119.16 A W-1. With the aid of computational modeling, we find that the main mechanism for the high Rph of the bilayer MoS2 phototransistor is a photo-gating effect by the holes trapped at subgap states. The image-sensing characteristics of the bilayer MoS2 active pixel image sensor array are successfully investigated using light stencil projection.
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Affiliation(s)
- Seongin Hong
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas, 78758, USA
| | - Nicolò Zagni
- Department of Engineering "Enzo Ferrari" (DIEF), University of Modena and Reggio Emilia, Modena, Italy
| | - Sooho Choo
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Na Liu
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Seungho Baek
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Arindam Bala
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam, Republic of Korea
| | - Byung Ha Kang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Hyung Joong Yun
- Research Center for Materials Analysis, Korea Basic Science Institute (KBSI), Daejeon, Republic of Korea
| | - Muhammad Ashraful Alam
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA.
| | - Sunkook Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea.
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47
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Ishag A, Sun Y. Recent Advances in Two-Dimensional MoS 2 Nanosheets for Environmental Application. Ind Eng Chem Res 2021. [DOI: 10.1021/acs.iecr.1c01311] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Affiliation(s)
- Alhadi Ishag
- College of Environmental Science and Technology, North China Electric Power University, Beijing, 102206, People’s Republic of China
| | - Yubing Sun
- College of Environmental Science and Technology, North China Electric Power University, Beijing, 102206, People’s Republic of China
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48
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High-current MoS 2 transistors with non-planar gate configuration. Sci Bull (Beijing) 2021; 66:777-782. [PMID: 36654135 DOI: 10.1016/j.scib.2020.12.009] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/15/2020] [Revised: 10/22/2020] [Accepted: 11/26/2020] [Indexed: 01/20/2023]
Abstract
The ever-decreasing size of transistors requires effectively electrostatic control over ultra-thin semiconductor body. Rational design of the gate configuration can fully persevere the intrinsic property of two-dimensional (2D) semiconductors. Here we design and demonstrate a 2D MoS2 transistor with omega-shaped gate, in which the local gate coupling is enhanced by the non-planar geometry. The omega-shaped non-planar transistors exhibit a high current of 0.89 A/μm and transconductance of 32.7 μS/μm. The high performance and desirable current saturation promise the construction of robust logic gate. The inverters show a voltage gain of 26.6 and an ideal total margin nearly 89%. We also assemble NOT-AND (NAND) gate on an individual MoS2 flake, and the constructed NAND gate demonstrates the universal functionality of the transistors as well. This work provides an alternative strategy to fully take the advantages of 2D materials for high-performance field-effect transistors.
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49
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Toral-Lopez A, Pasadas F, Marin EG, Medina-Rull A, Gonzalez-Medina JM, Ruiz FG, Jiménez D, Godoy A. Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors. NANOSCALE ADVANCES 2021; 3:2377-2382. [PMID: 36133760 PMCID: PMC9417752 DOI: 10.1039/d0na00953a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2020] [Accepted: 03/10/2021] [Indexed: 06/02/2023]
Abstract
Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support the experimental activities and to provide them with useful guidelines becomes essential. In this context, we propose a theoretical approach that combines numerical simulations and small-signal modeling to analyze 2DM-based FETs for radio-frequency applications. This multi-scale scheme takes into account non-idealities, such as interface traps, carrier velocity saturation, or short channel effects, by means of self-consistent physics-based numerical calculations that later feed the circuit level via a small-signal model based on the dynamic intrinsic capacitances of the device. At the circuit stage, the possibilities range from the evaluation of the performance of a single device to the design of complex circuits combining multiple transistors. In this work, we validate our scheme against experimental results and exemplify its use and capability assessing the impact of the channel scaling on the performance of MoS2-based FETs targeting RF applications.
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Affiliation(s)
- A Toral-Lopez
- Departamento de Electrónica, Facultad de Ciencias, Universidad de Granada 18071 Granada Spain
| | - F Pasadas
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona 08193 Bellaterra Spain
| | - E G Marin
- Departamento de Electrónica, Facultad de Ciencias, Universidad de Granada 18071 Granada Spain
| | - A Medina-Rull
- Departamento de Electrónica, Facultad de Ciencias, Universidad de Granada 18071 Granada Spain
| | | | - F G Ruiz
- Departamento de Electrónica, Facultad de Ciencias, Universidad de Granada 18071 Granada Spain
| | - D Jiménez
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona 08193 Bellaterra Spain
| | - A Godoy
- Departamento de Electrónica, Facultad de Ciencias, Universidad de Granada 18071 Granada Spain
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50
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High-Performance CVD Bilayer MoS 2 Radio Frequency Transistors and Gigahertz Mixers for Flexible Nanoelectronics. MICROMACHINES 2021; 12:mi12040451. [PMID: 33923705 PMCID: PMC8072592 DOI: 10.3390/mi12040451] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/27/2021] [Revised: 04/12/2021] [Accepted: 04/14/2021] [Indexed: 11/17/2022]
Abstract
Two-dimensional (2D) MoS2 have attracted tremendous attention due to their potential applications in future flexible high-frequency electronics. Bilayer MoS2 exhibits the advantages of carrier mobility when compared with monolayer mobility, thus making the former more suitable for use in future flexible high-frequency electronics. However, there are fewer systematical studies of chemical vapor deposition (CVD) bilayer MoS2 radiofrequency (RF) transistors on flexible polyimide substrates. In this work, CVD bilayer MoS2 RF transistors on flexible substrates with different gate lengths and gigahertz flexible frequency mixers were constructed and systematically studied. The extrinsic cutoff frequency (fT) and maximum oscillation frequency (fmax) increased with reducing gate lengths. From transistors with a gate length of 0.3 μm, we demonstrated an extrinsic fT of 4 GHz and fmax of 10 GHz. Furthermore, statistical analysis of 14 flexible MoS2 RF transistors is presented in this work. The study of a flexible mixer demonstrates the dependence of conversion gain versus gate voltage, LO power and input signal frequency. These results present the potential of CVD bilayer MoS2 for future flexible high-frequency electronics.
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