1
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Chiout A, Brochard-Richard C, Oehler F, Ouerghi A, Chaste J. Mapping of Vibrational Modes Revealing a Strong and Tunable Coupling in Two Juxtaposed 3R-WSe 2 Nanodrums. NANO LETTERS 2024; 24:10148-10154. [PMID: 39136291 DOI: 10.1021/acs.nanolett.4c02214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/22/2024]
Abstract
Two-dimensional (2D) material resonators have emerged as promising platforms for advanced nanomechanical applications due to their exceptional mechanical properties, tunability, and nonlinearities. We explored the strong mechanical mode coupling between two adjacent 3R-WSe2 nanodrums at room temperature. Combining a piezoelectric material, as noncentrosymmetric 3R-WSe2, and vibration manipulation is the building block for phononic experiments with 2D materials. By strategically placing gate grids beneath each resonator and mapping the spatial distribution of these modes, we demonstrate the ability to transit between localized modes in individual membranes to delocalized, strongly coupled modes that span the entire suspended region. The coherent coupling is strongly tunable with simple gate voltage, and remarkable resonance splitting was achieved, corresponding to up to 5% of the vibration frequency. These results showcase the potential of 2D material resonators for efficient information exchange, paving the way for novel applications in quantum technologies and nanoscale sensing.
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Affiliation(s)
- Anis Chiout
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
| | | | - Fabrice Oehler
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
| | - Julien Chaste
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
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2
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Long Y, Liu Z, Ayazi F. 4H-Silicon Carbide as an Acoustic Material for MEMS. IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL 2023; 70:1189-1200. [PMID: 37276110 DOI: 10.1109/tuffc.2023.3282920] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
This article discusses the potential of 4H-silicon carbide (SiC) as a superior acoustic material for microelectromechanical systems (MEMS), particularly for high-performance resonator and extreme environments applications. Through a comparison of the crystalline structure along with the mechanical, acoustic, electrical, and thermal properties of 4H with respect to other SiC polytypes and silicon, it is shown that 4H-SiC possesses salient properties for MEMS applications, including its transverse isotropy and small phonon scattering dissipation. The utility and implementation of bonded SiC on insulator (4H-SiCOI) substrates as an emerging MEMS technology platform are presented. Additionally, this article reports on the temperature-dependent mechanical properties of 4H-SiC, including the temperature coefficient of frequency (TCF) and quality factor ( Q -factor) for Lamé mode resonators. Finally, the 4H-SiC MEMS fabrication including its deep reactive ion etching is discussed. This article provides valuable insights into the potential of 4H-SiC as a mechanoacoustic material and provides a foundation for future research in the field.
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3
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Xu B, Zhu J, Xiao F, Jiao C, Liang Y, Wen T, Wu S, Zhang Z, Lin L, Pei S, Jia H, Chen Y, Ren Z, Wei X, Huang W, Xia J, Wang Z. Identifying, Resolving, and Quantifying Anisotropy in ReS 2 Nanomechanical Resonators. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300631. [PMID: 36897000 DOI: 10.1002/smll.202300631] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2023] [Revised: 02/03/2023] [Indexed: 06/15/2023]
Abstract
As an emerging two-dimensional semiconductor, rhenium disulfide (ReS2 ) is renowned for its strong in-plane anisotropy in electrical, optical, and thermal properties. In contrast to the electrical, optical, optoelectrical, and thermal anisotropies that are extensively studied in ReS2 , experimental characterization of mechanical properties has largely remained elusive. Here, it is demonstrated that the dynamic response in ReS2 nanomechanical resonators can be leveraged to unambiguously resolve such disputes. Using anisotropic modal analysis, the parameter space for ReS2 resonators in which mechanical anisotropy is best manifested in resonant responses is determined. By measuring their dynamic response in both spectral and spatial domains using resonant nanomechanical spectromicroscopy, it is clearly shown that ReS2 crystal is mechanically anisotropic. Through fitting numerical models to experimental results, it is quantitatively determined that the in-plane Young's moduli are 127 and 201 GPa along the two orthogonal mechanical axes. In combination with polarized reflectance measurements, it is shown that the mechanical soft axis aligns with the Re-Re chain in the ReS2 crystal. These results demonstrate that dynamic responses in nanomechanical devices can offer important insights into intrinsic properties in 2D crystals and provide design guidelines for future nanodevices with anisotropic resonant responses.
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Affiliation(s)
- Bo Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Jiankai Zhu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Fei Xiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Yachun Liang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Ting Wen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Zejuan Zhang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Lin Lin
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Hao Jia
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Ying Chen
- State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
| | - Ziming Ren
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Xueyong Wei
- State Key Laboratory for Manufacturing Systems Engineering, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Wen Huang
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
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4
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Xu B, Zhu J, Xiao F, Liu N, Liang Y, Jiao C, Li J, Deng Q, Wu S, Wen T, Pei S, Wan H, Xiao X, Xia J, Wang Z. Electrically Tunable MXene Nanomechanical Resonators Vibrating at Very High Frequencies. ACS NANO 2022; 16:20229-20237. [PMID: 36508311 DOI: 10.1021/acsnano.2c05742] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As an emerging class of two-dimensional (2D) layered nanomaterial, MXene exhibits a number of intriguing properties, such as good electrical conductivity and high elastic modulus, and has witnessed continued growth in related device research. However, nanoscale MXene devices which leverage both the intrinsic electrical and mechanical properties of these 2D crystals have not been experimentally studied. Here we demonstrate nanoelectromechanical resonators based on 2D MXene crystals, where Ti3C2Tx drumheads with a wide range of thickness, from more than 50 layers all the way down to a monolayer, exhibit robust nanomechanical vibrations with fundamental-mode frequency f0 up to >70 MHz in the very high frequency (VHF) band, a displacement noise density down to 52 fm/Hz1/2, and a fundamental-mode frequency-quality factor product up to f0 × Q ≈ 6.85 × 109 Hz. By combining experimental results with theoretical calculations, we independently derive the Young's modulus of 2D Ti3C2Tx crystals to be 270-360 GPa, in excellent agreement with nanoindentation measurements, based on which we elucidate frequency scaling pathways toward microwave frequencies. We further demonstrate electrical tuning of resonance frequency in MXene resonators and frequency-shift-based MXene vacuum gauges with responsivity of 736%/Torr and detection range down to 10-4 Torr. Our study can lead to the design and creation of nanoscale vibratory devices that exploit the intrinsic electrical and mechanical properties in 2D MXene crystals.
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Affiliation(s)
- Bo Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Jiankai Zhu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Fei Xiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Na Liu
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu611731, China
- Department of Petroleum, Oil and Lubricants, Army Logistic Academy of PLA, Chongqing401331, China
| | - Yachun Liang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Jing Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Qingyang Deng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Ting Wen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Hujie Wan
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu611731, China
| | - Xu Xiao
- School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu611731, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu611731, China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu611731, China
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5
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Xu B, Zhang P, Zhu J, Liu Z, Eichler A, Zheng XQ, Lee J, Dash A, More S, Wu S, Wang Y, Jia H, Naik A, Bachtold A, Yang R, Feng PXL, Wang Z. Nanomechanical Resonators: Toward Atomic Scale. ACS NANO 2022; 16:15545-15585. [PMID: 36054880 PMCID: PMC9620412 DOI: 10.1021/acsnano.2c01673] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2022] [Accepted: 08/12/2022] [Indexed: 06/15/2023]
Abstract
The quest for realizing and manipulating ever smaller man-made movable structures and dynamical machines has spurred tremendous endeavors, led to important discoveries, and inspired researchers to venture to previously unexplored grounds. Scientific feats and technological milestones of miniaturization of mechanical structures have been widely accomplished by advances in machining and sculpturing ever shrinking features out of bulk materials such as silicon. With the flourishing multidisciplinary field of low-dimensional nanomaterials, including one-dimensional (1D) nanowires/nanotubes and two-dimensional (2D) atomic layers such as graphene/phosphorene, growing interests and sustained effort have been devoted to creating mechanical devices toward the ultimate limit of miniaturization─genuinely down to the molecular or even atomic scale. These ultrasmall movable structures, particularly nanomechanical resonators that exploit the vibratory motion in these 1D and 2D nano-to-atomic-scale structures, offer exceptional device-level attributes, such as ultralow mass, ultrawide frequency tuning range, broad dynamic range, and ultralow power consumption, thus holding strong promises for both fundamental studies and engineering applications. In this Review, we offer a comprehensive overview and summary of this vibrant field, present the state-of-the-art devices and evaluate their specifications and performance, outline important achievements, and postulate future directions for studying these miniscule yet intriguing molecular-scale machines.
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Affiliation(s)
- Bo Xu
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
| | - Pengcheng Zhang
- University
of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai200240, China
| | - Jiankai Zhu
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
| | - Zuheng Liu
- University
of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai200240, China
| | | | - Xu-Qian Zheng
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
- College
of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing210023, China
| | - Jaesung Lee
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
- Department
of Electrical and Computer Engineering, University of Texas at El Paso, El Paso, Texas79968, United States
| | - Aneesh Dash
- Centre
for
Nano Science and Engineering, Indian Institute
of Science, Bangalore560012, Karnataka, India
| | - Swapnil More
- Centre
for
Nano Science and Engineering, Indian Institute
of Science, Bangalore560012, Karnataka, India
| | - Song Wu
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
| | - Yanan Wang
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
- Department
of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska68588, United States
| | - Hao Jia
- Shanghai
Institute of Microsystem and Information Technology, Chinese Academy
of Sciences, Shanghai200050, China
| | - Akshay Naik
- Centre
for
Nano Science and Engineering, Indian Institute
of Science, Bangalore560012, Karnataka, India
| | - Adrian Bachtold
- ICFO-Institut
de Ciencies Fotoniques, The Barcelona Institute
of Science and Technology, Castelldefels, Barcelona08860, Spain
| | - Rui Yang
- University
of Michigan−Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai200240, China
- School of
Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai200240, China
| | - Philip X.-L. Feng
- Department
of Electrical and Computer Engineering, Herbert Wertheim College of
Engineering, University of Florida, Gainesville, Florida32611, United States
| | - Zenghui Wang
- Institute
of Fundamental and Frontier Sciences, University
of Electronic Science and Technology of China, Chengdu610054, China
- State
Key Laboratory of Electronic Thin Films and Integrated Devices, University
of Electronic Science and Technology of China, Chengdu610054, China
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6
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Aguila MAC, Esmenda JC, Wang JY, Chen YC, Lee TH, Yang CY, Lin KH, Chang-Liao KS, Kafanov S, Pashkin YA, Chen CD. Photothermal Responsivity of van der Waals Material-Based Nanomechanical Resonators. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:2675. [PMID: 35957105 PMCID: PMC9370576 DOI: 10.3390/nano12152675] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/07/2022] [Revised: 07/30/2022] [Accepted: 07/31/2022] [Indexed: 02/04/2023]
Abstract
Nanomechanical resonators made from van der Waals materials (vdW NMRs) provide a new tool for sensing absorbed laser power. The photothermal response of vdW NMRs, quantified from the resonant frequency shifts induced by optical absorption, is enhanced when incorporated in a Fabry-Pérot (FP) interferometer. Along with the enhancement comes the dependence of the photothermal response on NMR displacement, which lacks investigation. Here, we address the knowledge gap by studying electromotively driven niobium diselenide drumheads fabricated on highly reflective substrates. We use a FP-mediated absorptive heating model to explain the measured variations of the photothermal response. The model predicts a higher magnitude and tuning range of photothermal responses on few-layer and monolayer NbSe2 drumheads, which outperform other clamped vdW drum-type NMRs at a laser wavelength of 532 nm. Further analysis of the model shows that both the magnitude and tuning range of NbSe2 drumheads scale with thickness, establishing a displacement-based framework for building bolometers using FP-mediated vdW NMRs.
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Affiliation(s)
- Myrron Albert Callera Aguila
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan
| | - Joshoua Condicion Esmenda
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
- Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
- Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan
| | - Jyh-Yang Wang
- Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan
| | - Yen-Chun Chen
- Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan
| | - Teik-Hui Lee
- Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan
| | - Chi-Yuan Yang
- Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan
| | - Kung-Hsuan Lin
- Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan
| | - Kuei-Shu Chang-Liao
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Sergey Kafanov
- Department of Physics, Lancaster University, Lancaster LA1 4YB, UK
| | - Yuri A. Pashkin
- Department of Physics, Lancaster University, Lancaster LA1 4YB, UK
| | - Chii-Dong Chen
- Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan
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7
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Tan D, Cao X, Huang J, Peng Y, Zeng L, Guo Q, Sun N, Bi S, Ji R, Jiang C. Monolayer MXene Nanoelectromechanical Piezo-Resonators with 0.2 Zeptogram Mass Resolution. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2201443. [PMID: 35619285 PMCID: PMC9353497 DOI: 10.1002/advs.202201443] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/12/2022] [Revised: 04/26/2022] [Indexed: 06/15/2023]
Abstract
2D materials-based nanoelectromechanical resonant systems with high sensitivity can precisely trace quantities of ultra-small mass molecules and therefore are broadly applied in biological analysis, chemical sensing, and physical detection. However, conventional optical and capacitive transconductance schemes struggle to measure high-order mode resonant effectively, which is the scientific key to further achieving higher accuracy and lower noise. In the present study, the different vibrations of monolayer Ti3 C2 Tx MXene piezo-resonators are investigated, and achieve a high-order f2,3 resonant mode with a ≈234.59 ± 0.05 MHz characteristic peak due to the special piezoelectrical structure of the Ti3 C2 Tx MXene layer. The effective measurements of signals have a low thermomechanical motion spectral density (9.66 ± 0.01 f m H z $\frac{{fm}}{{\sqrt {Hz} }}$ ) and an extensive dynamic range (118.49 ± 0.42 dB) with sub-zeptograms resolution (0.22 ± 0.01 zg) at 300 K temperature and 1 atm. Furthermore, the functional groups of the Ti3 C2 Tx MXene with unique adsorption properties enable a high working range ratio of ≈3100 and excellent repeatability. This Ti3 C2 Tx MXene device demonstrates encouraging performance advancements over other nano-resonators and will lead the related engineering applications including high-sensitivity mass detectors.
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Affiliation(s)
- Dongchen Tan
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Xuguang Cao
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Jijie Huang
- School of Materials EngineeringPurdue UniversityWest LafayetteIN47907USA
| | - Yan Peng
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Lijun Zeng
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Qinglei Guo
- Department of Material Science and EngineeringFrederick Seitz Material Research LaboratoryUniversity of Illinois at Urbana‐ChampaignUrbanaIL61801USA
| | - Nan Sun
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Sheng Bi
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
| | - Ruonan Ji
- Department of PhysicsNorthwestern Polytechnical UniversityXi'an710072China
| | - Chengming Jiang
- Key Laboratory for Precision and Non‐traditional Machining Technology of the Ministry of EducationDalian University of TechnologyDalian116024China
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8
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Zhu J, Xu B, Xiao F, Liang Y, Jiao C, Li J, Deng Q, Wu S, Wen T, Pei S, Xia J, Wang Z. Frequency Scaling, Elastic Transition, and Broad-Range Frequency Tuning in WSe 2 Nanomechanical Resonators. NANO LETTERS 2022; 22:5107-5113. [PMID: 35522819 DOI: 10.1021/acs.nanolett.2c00494] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Nanomechanical resonators based on atomic layers of tungsten diselenide (WSe2) offer intriguing prospects for enabling novel sensing and signal processing functions. The frequency scaling law of such resonant devices is critical for designing and realizing these high-frequency circuit components. Here, we elucidate the frequency scaling law for WSe2 nanomechanical resonators by studying devices of one-, two-, three-, to more than 100-layer thicknesses and different diameters. We observe resonant responses in both mechanical limits and clear elastic transition in between, revealing intrinsic material properties and devices parameters such as Young's modulus and pretension. We further demonstrate a broad frequency tuning range (up to 230%) with a high tuning efficiency (up to 23% V-1). Such tuning efficiency is among the highest in resonators based on two-dimensional (2D) layered materials. Our findings can offer important guidelines for designing high-frequency WSe2 resonant devices.
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Affiliation(s)
- Jiankai Zhu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Bo Xu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Fei Xiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yachun Liang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jing Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qingyang Deng
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Ting Wen
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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9
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Li Q, Lu K, Wu K, Zhang H, Sun X, Wu X, Xiao D. A Novel High-Speed and High-Accuracy Mathematical Modeling Method of Complex MEMS Resonator Structures Based on the Multilayer Perceptron Neural Network. MICROMACHINES 2021; 12:mi12111313. [PMID: 34832725 PMCID: PMC8625225 DOI: 10.3390/mi12111313] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/13/2021] [Revised: 10/23/2021] [Accepted: 10/24/2021] [Indexed: 11/26/2022]
Abstract
MEMS resonators have become core devices in a large number of fields; however, due to their complex structures, the finite element analysis (FEA) method is still the main method for their theoretical analysis. The traditional finite element analysis method faces the disadvantages of large calculation amount and long simulation time, which limits the development of high-performance MEMS resonators. This paper demonstrates a high-speed and high-accuracy simulation tool based on the artificial neural network, where a multilayer perceptron (MLP) neural network model is constructed. The typical structural parameters of MEMS resonator are used as the input layer, and its performance indicators produced by the finite element analysis method are the output layer. After iteratively trained with 4000 samples, the cumulative error of the neural network decreases to 0.0017 and a prediction network model is obtained. Compared with the finite element analysis results, the structural accuracy error predicted by the neural network model can be controlled within 6%, but its runtime is shortened by 15,000 times. This high-speed and high-accuracy mathematical modeling method can effectively improve the analyzing efficiency and provide a promising tool for the design and optimization of different complex MEMS resonators, which exhibit remarkable accuracy and speed.
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Affiliation(s)
- Qingsong Li
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (Q.L.); (K.L.); (K.W.); (H.Z.); (X.S.); (X.W.)
- Hunan MEMS Research Center, Changsha 410073, China
| | - Kuo Lu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (Q.L.); (K.L.); (K.W.); (H.Z.); (X.S.); (X.W.)
| | - Kai Wu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (Q.L.); (K.L.); (K.W.); (H.Z.); (X.S.); (X.W.)
| | - Hao Zhang
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (Q.L.); (K.L.); (K.W.); (H.Z.); (X.S.); (X.W.)
| | - Xiaopeng Sun
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (Q.L.); (K.L.); (K.W.); (H.Z.); (X.S.); (X.W.)
| | - Xuezhong Wu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (Q.L.); (K.L.); (K.W.); (H.Z.); (X.S.); (X.W.)
- Hunan MEMS Research Center, Changsha 410073, China
- Laboratory of Science and Technology on Integrated Logistics Support, National University of Defense Technology, Changsha 410073, China
| | - Dingbang Xiao
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (Q.L.); (K.L.); (K.W.); (H.Z.); (X.S.); (X.W.)
- Hunan MEMS Research Center, Changsha 410073, China
- Laboratory of Science and Technology on Integrated Logistics Support, National University of Defense Technology, Changsha 410073, China
- Correspondence: ; Tel.: +86-0731-8457-4958
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Wei L, Kuai X, Bao Y, Wei J, Yang L, Song P, Zhang M, Yang F, Wang X. The Recent Progress of MEMS/NEMS Resonators. MICROMACHINES 2021; 12:724. [PMID: 34205469 PMCID: PMC8235191 DOI: 10.3390/mi12060724] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/18/2021] [Revised: 06/13/2021] [Accepted: 06/14/2021] [Indexed: 01/22/2023]
Abstract
MEMS/NEMS resonators are widely studied in biological detection, physical sensing, and quantum coupling. This paper reviews the latest research progress of MEMS/NEMS resonators with different structures. The resonance performance, new test method, and manufacturing process of single or double-clamped resonators, and their applications in mass sensing, micromechanical thermal analysis, quantum detection, and oscillators are introduced in detail. The material properties, resonance mode, and application in different fields such as gyroscope of the hemispherical structure, microdisk structure, drum resonator are reviewed. Furthermore, the working principles and sensing methods of the surface acoustic wave and bulk acoustic wave resonators and their new applications such as humidity sensing and fast spin control are discussed. The structure and resonance performance of tuning forks are summarized. This article aims to classify resonators according to different structures and summarize the working principles, resonance performance, and applications.
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Affiliation(s)
- Lei Wei
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xuebao Kuai
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
| | - Yidi Bao
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiangtao Wei
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
| | - Liangliang Yang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Peishuai Song
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mingliang Zhang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fuhua Yang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing 100083, China
| | - Xiaodong Wang
- Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (L.W.); (X.K.); (Y.B.); (J.W.); (L.Y.); (P.S.); (M.Z.); (F.Y.)
- The School of Microelectronics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Academy of Quantum Information Science, Beijing 100193, China
- Beijing Engineering Research Center of Semiconductor Micro-Nano Integrated Technology, Beijing 100083, China
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11
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Hamelin B, Yang J, Daruwalla A, Wen H, Ayazi F. Monocrystalline Silicon Carbide Disk Resonators on Phononic Crystals with Ultra-Low Dissipation Bulk Acoustic Wave Modes. Sci Rep 2019; 9:18698. [PMID: 31822789 PMCID: PMC6904713 DOI: 10.1038/s41598-019-54278-9] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/11/2019] [Accepted: 11/04/2019] [Indexed: 11/30/2022] Open
Abstract
Micromechanical resonators with ultra-low energy dissipation are essential for a wide range of applications, such as navigation in GPS-denied environments. Routinely implemented in silicon (Si), their energy dissipation often reaches the quantum limits of Si, which can be surpassed by using materials with lower intrinsic loss. This paper explores dissipation limits in 4H monocrystalline silicon carbide-on-insulator (4H-SiCOI) mechanical resonators fabricated at wafer-level, and reports on ultra-high quality-factors (Q) in gyroscopic-mode disk resonators. The SiC disk resonators are anchored upon an acoustically-engineered Si substrate containing a phononic crystal which suppresses anchor loss and promises QANCHOR near 1 Billion by design. Operating deep in the adiabatic regime, the bulk acoustic wave (BAW) modes of solid SiC disks are mostly free of bulk thermoelastic damping. Capacitively-transduced SiC BAW disk resonators consistently display gyroscopic m = 3 modes with Q-factors above 2 Million (M) at 6.29 MHz, limited by surface TED due to microscale roughness along the disk sidewalls. The surface TED limit is revealed by optical measurements on a SiC disk, with nanoscale smooth sidewalls, exhibiting Q = 18 M at 5.3 MHz, corresponding to f · Q = 9 · 1013 Hz, a 5-fold improvement over the Akhiezer limit of Si. Our results pave the path for integrated SiC resonators and resonant gyroscopes with Q-factors beyond the reach of Si.
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Affiliation(s)
- Benoit Hamelin
- Department of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA, 30332, USA.
| | - Jeremy Yang
- School of Physics, Georgia Institute of Technology, 837 State Street, Atlanta, GA, 30332, USA
| | - Anosh Daruwalla
- Department of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA, 30332, USA
| | - Haoran Wen
- Department of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA, 30332, USA
| | - Farrokh Ayazi
- Department of Electrical and Computer Engineering, Georgia Institute of Technology, 777 Atlantic Drive NW, Atlanta, GA, 30332, USA
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12
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Islam A, van den Akker A, Feng PXL. Anisotropic Thermal Conductivity of Suspended Black Phosphorus Probed by Opto-Thermomechanical Resonance Spectromicroscopy. NANO LETTERS 2018; 18:7683-7691. [PMID: 30372081 DOI: 10.1021/acs.nanolett.8b03333] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Atomic layer semiconducting black phosphorus (P) exfoliated from its bulk crystals offers excellent properties and promises for emerging two-dimensional (2D) electronics, photonics, and transducers. It also possesses unique strong in-plane anisotropy among many 2D semiconductors, stemming from its corrugated crystal structure. As an important thermophysical aspect, probing the anisotropic thermal conductivity of black P is essential for device engineering, especially for energy dissipation and thermal management. Here, we report on measurement and analysis of anisotropic in-plane thermal conductivity of black P crystal, in a mechanically suspended device platform, by exploiting a novel opto-thermomechanical resonance spectromicroscopy (OTMRS) technique. With spatially resolved heating effects and thermomechanical resonance motions of suspended structures, anisotropic in-plane thermal conductivity (κAC and κZZ) is determined for black P crystals of 10-100 nm thick. This study validates a new noninvasive approach to determining anisotropic thermal conductivity without any requirement of preknowledge of crystal orientation or specific configurations of structure and electrodes according to the anisotropy.
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Affiliation(s)
- Arnob Islam
- Department of Electrical Engineering & Computer Science, Case School of Engineering , Case Western Reserve University , 10900 Euclid Avenue , Cleveland , Ohio 44106 , United States
| | - Anno van den Akker
- Department of Electrical Engineering & Computer Science, Case School of Engineering , Case Western Reserve University , 10900 Euclid Avenue , Cleveland , Ohio 44106 , United States
| | - Philip X-L Feng
- Department of Electrical Engineering & Computer Science, Case School of Engineering , Case Western Reserve University , 10900 Euclid Avenue , Cleveland , Ohio 44106 , United States
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13
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Lee J, Wang Z, He K, Yang R, Shan J, Feng PXL. Electrically tunable single- and few-layer MoS 2 nanoelectromechanical systems with broad dynamic range. SCIENCE ADVANCES 2018; 4:eaao6653. [PMID: 29670938 PMCID: PMC5903902 DOI: 10.1126/sciadv.aao6653] [Citation(s) in RCA: 58] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/14/2017] [Accepted: 02/07/2018] [Indexed: 05/22/2023]
Abstract
Atomically thin semiconducting crystals [such as molybdenum disulfide (MoS2)] have outstanding electrical, optical, and mechanical properties, thus making them excellent constitutive materials for innovating new two-dimensional (2D) nanoelectromechanical systems (NEMS). Although prototype structures have recently been demonstrated toward functional devices such as ultralow-power, high-frequency tunable oscillators and ultrasensitive resonant transducers, both electrical tunability and large dynamic range (DR) are critical and desirable. We report the first experimental demonstration of clearly defined single-, bi-, and trilayer MoS2 2D resonant NEMS operating in the very high frequency band (up to ~120 MHz) with outstanding electrical tunability and DR. Through deterministic measurement and calibration, we discover that these 2D atomic layer devices have remarkably broad DR (up to ~70 to 110 dB), in contrast to their 1D NEMS counterparts that are expected to have limited DR. These 2D devices, therefore, open avenues for efficiently tuning and strongly coupling the electronic, mechanical, and optical properties in atomic layer semiconducting devices and systems.
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Affiliation(s)
- Jaesung Lee
- Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
| | - Zenghui Wang
- Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China
| | - Keliang He
- Department of Physics, College of Arts and Sciences, Case Western Reserve University, Cleveland, OH 44106, USA
| | - Rui Yang
- Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
| | - Jie Shan
- Department of Physics, College of Arts and Sciences, Case Western Reserve University, Cleveland, OH 44106, USA
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
| | - Philip X.-L. Feng
- Department of Electrical Engineering and Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA
- Corresponding author.
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14
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Zheng XQ, Lee J, Rafique S, Han L, Zorman CA, Zhao H, Feng PXL. Ultrawide Band Gap β-Ga 2O 3 Nanomechanical Resonators with Spatially Visualized Multimode Motion. ACS APPLIED MATERIALS & INTERFACES 2017; 9:43090-43097. [PMID: 29115818 DOI: 10.1021/acsami.7b13930] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Beta gallium oxide (β-Ga2O3) is an emerging ultrawide band gap (4.5 eV-4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation. β-Ga2O3 thin films made by various methods are being actively studied toward such devices. Here, we report on the experimental demonstration of single-crystal β-Ga2O3 nanomechanical resonators using β-Ga2O3 nanoflakes grown via low-pressure chemical vapor deposition (LPCVD). By investigating β-Ga2O3 circular drumhead structures, we demonstrate multimode nanoresonators up to the sixth mode in high and very high frequency (HF/VHF) bands, and also realize spatial mapping and visualization of the multimode motion. These measurements reveal a Young's modulus of EY = 261 GPa and anisotropic biaxial built-in tension of 37.5 MPa and 107.5 MPa. We find that thermal annealing can considerably improve the resonance characteristics, including ∼40% upshift in frequency and ∼90% enhancement in quality (Q) factor. This study lays a foundation for future exploration and development of mechanically coupled and tunable β-Ga2O3 electronic, optoelectronic, and physical sensing devices.
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Affiliation(s)
- Xu-Qian Zheng
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Jaesung Lee
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Subrina Rafique
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Lu Han
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Christian A Zorman
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Hongping Zhao
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Philip X-L Feng
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
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15
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Shen Z, Han X, Zou CL, Tang HX. Phase sensitive imaging of 10 GHz vibrations in an AlN microdisk resonator. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2017; 88:123709. [PMID: 29289177 DOI: 10.1063/1.4995008] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We demonstrate a high frequency phase-sensitive heterodyne vibrometer, operating up to 10 GHz. Using this heterodyne vibrometer, the amplitude and phase fields of the fundamental thickness mode, the radial fundamental, and the 2nd-order modes of an AlN optomechanical microdisk resonator are mapped with a displacement sensitivity of around 0.36pm/Hz. The simultaneous amplitude and phase measurement allow precise mode identification and characterization. The recorded modal frequencies and profiles are consistent with numerical simulations. This vibrometer will be of great significance for the development of high frequency mechanical devices.
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Affiliation(s)
- Zhen Shen
- Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA
| | - Xu Han
- Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA
| | - Chang-Ling Zou
- Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA
| | - Hong X Tang
- Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USA
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16
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Lee J, Kaul AB, Feng PXL. Carbon nanofiber high frequency nanomechanical resonators. NANOSCALE 2017; 9:11864-11870. [PMID: 28805881 DOI: 10.1039/c7nr02306e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Carbon nanofibers (CNFs) synthesized using a plasma-enhanced chemical vapor deposition (PECVD) process are investigated as a new class of building blocks for high-frequency vibrating nanomechanical resonators. The CNF resonators are prototyped by using vertically oriented few-μm-long cantilever-structured CNFs grown by PECVD. Undriven thermomechanical motions and photothermally driven resonances are measured in the frequency range of ∼3-10 MHz, which exhibit quality (Q) factors of ∼140-350 in moderate vacuum (milliTorr) at room temperature. Further, characteristics of CNF resonators after platinum deposition and intensive electron beam exposure are investigated, and resonance frequency shifts due to mass loading on the CNFs are clearly observed. In addition, extensive material characterization of the CNFs using techniques such as X-ray electron dispersive spectroscopy (XEDS) with spatial element-mapping reveals the structure and growth mechanism of the CNFs.
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Affiliation(s)
- Jaesung Lee
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, Cleveland, OH 44106, USA.
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17
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Phan HP, Cheng HH, Dinh T, Wood B, Nguyen TK, Mu F, Kamble H, Vadivelu R, Walker G, Hold L, Iacopi A, Haylock B, Dao DV, Lobino M, Suga T, Nguyen NT. Single-Crystalline 3C-SiC anodically Bonded onto Glass: An Excellent Platform for High-Temperature Electronics and Bioapplications. ACS APPLIED MATERIALS & INTERFACES 2017; 9:27365-27371. [PMID: 28792726 DOI: 10.1021/acsami.7b06661] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Single-crystal cubic silicon carbide has attracted great attention for MEMS and electronic devices. However, current leakage at the SiC/Si junction at high temperatures and visible-light absorption of the Si substrate are main obstacles hindering the use of the platform in a broad range of applications. To solve these bottlenecks, we present a new platform of single crystal SiC on an electrically insulating and transparent substrate using an anodic bonding process. The SiC thin film was prepared on a 150 mm Si with a surface roughness of 7 nm using LPCVD. The SiC/Si wafer was bonded to a glass substrate and then the Si layer was completely removed through wafer polishing and wet etching. The bonded SiC/glass samples show a sharp bonding interface of less than 15 nm characterized using deep profile X-ray photoelectron spectroscopy, a strong bonding strength of approximately 20 MPa measured from the pulling test, and relatively high optical transparency in the visible range. The transferred SiC film also exhibited good conductivity and a relatively high temperature coefficient of resistance varying from -12 000 to -20 000 ppm/K, which is desirable for thermal sensors. The biocompatibility of SiC/glass was also confirmed through mouse 3T3 fibroblasts cell-culturing experiments. Taking advantage of the superior electrical properties and biocompatibility of SiC, the developed SiC-on-glass platform offers unprecedented potentials for high-temperature electronics as well as bioapplications.
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Affiliation(s)
| | - Han-Hao Cheng
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland , Brisbane, Queensland 4072, Australia
| | | | - Barry Wood
- Australian Institute for Bioengineering and Nanotechnology, The University of Queensland , Brisbane, Queensland 4072, Australia
| | | | - Fengwen Mu
- Department of Precision Engineering, The University of Tokyo , Tokyo 113-8654, Japan
| | | | | | | | | | | | | | | | | | - Tadatomo Suga
- Department of Precision Engineering, The University of Tokyo , Tokyo 113-8654, Japan
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18
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Zheng XQ, Lee J, Feng PXL. Hexagonal boron nitride nanomechanical resonators with spatially visualized motion. MICROSYSTEMS & NANOENGINEERING 2017; 3:17038. [PMID: 31057874 PMCID: PMC6444998 DOI: 10.1038/micronano.2017.38] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2016] [Revised: 02/17/2017] [Accepted: 03/20/2017] [Indexed: 05/24/2023]
Abstract
Atomic layers of hexagonal boron nitride (h-BN) crystal are excellent candidates for structural materials as enabling ultrathin, two-dimensional (2D) nanoelectromechanical systems (NEMS) due to the outstanding mechanical properties and very wide bandgap (5.9 eV) of h-BN. In this work, we report the experimental demonstration of h-BN 2D nanomechanical resonators vibrating at high and very high frequencies (from ~5 to ~70 MHz), and investigations of the elastic properties of h-BN by measuring the multimode resonant behavior of these devices. First, we demonstrate a dry-transferred doubly clamped h-BN membrane with ~6.7 nm thickness, the thinnest h-BN resonator known to date. In addition, we fabricate circular drumhead h-BN resonators with thicknesses ranging from ~9 to 292 nm, from which we measure up to eight resonance modes in the range of ~18 to 35 MHz. Combining measurements and modeling of the rich multimode resonances, we resolve h-BN's elastic behavior, including the transition from membrane to disk regime, with built-in tension ranging from 0.02 to 2 N m-1. The Young's modulus of h-BN is determined to be E Y≈392 GPa from the measured resonances. The ultrasensitive measurements further reveal subtle structural characteristics and mechanical properties of the suspended h-BN diaphragms, including anisotropic built-in tension and bulging, thus suggesting guidelines on how these effects can be exploited for engineering multimode resonant functions in 2D NEMS transducers.
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Affiliation(s)
- Xu-Qian Zheng
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA
| | - Jaesung Lee
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA
| | - Philip X.-L. Feng
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA
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19
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Barg A, Tsaturyan Y, Belhage E, Nielsen WHP, Møller CB, Schliesser A. Measuring and imaging nanomechanical motion with laser light. APPLIED PHYSICS. B, LASERS AND OPTICS 2016; 123:8. [PMID: 32165791 PMCID: PMC7045900 DOI: 10.1007/s00340-016-6585-7] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2016] [Accepted: 11/07/2016] [Indexed: 05/22/2023]
Abstract
We discuss several techniques based on laser-driven interferometers and cavities to measure nanomechanical motion. With increasing complexity, they achieve sensitivities reaching from thermal displacement amplitudes, typically at the picometer scale, all the way to the quantum regime, in which radiation pressure induces motion correlated with the quantum fluctuations of the probing light. We show that an imaging modality is readily provided by scanning laser interferometry, reaching a sensitivity on the order of 10 fm / Hz 1 / 2 , and a transverse resolution down to 2 μ m . We compare this approach with a less versatile, but faster (single-shot) dark-field imaging technique.
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Affiliation(s)
- Andreas Barg
- Niels Bohr Institute, Blegdamsvej 17, 2100 Copenhagen, Denmark
| | | | - Erik Belhage
- Niels Bohr Institute, Blegdamsvej 17, 2100 Copenhagen, Denmark
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20
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Wang Z, Jia H, Zheng XQ, Yang R, Ye GJ, Chen XH, Feng PXL. Resolving and Tuning Mechanical Anisotropy in Black Phosphorus via Nanomechanical Multimode Resonance Spectromicroscopy. NANO LETTERS 2016; 16:5394-5400. [PMID: 27505636 DOI: 10.1021/acs.nanolett.6b01598] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Black phosphorus (P) has emerged as a layered semiconductor with a unique crystal structure featuring corrugated atomic layers and strong in-plane anisotropy in its physical properties. Here, we demonstrate that the crystal orientation and mechanical anisotropy in free-standing black P thin layers can be precisely determined by spatially resolved multimode nanomechanical resonances. This offers a new means for resolving important crystal orientation and anisotropy in black P device platforms in situ beyond conventional optical and electrical calibration techniques. Furthermore, we show that electrostatic-gating-induced straining can continuously tune the mechanical anisotropic effects on multimode resonances in black P electromechanical devices. Combined with finite element modeling (FEM), we also determine the Young's moduli of multilayer black P to be 116.1 and 46.5 GPa in the zigzag and armchair directions, respectively.
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Affiliation(s)
- Zenghui Wang
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Hao Jia
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Xu-Qian Zheng
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | - Rui Yang
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
| | | | | | - Philip X-L Feng
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University , 10900 Euclid Avenue, Cleveland, Ohio 44106, United States
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21
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Wang Z, Feng PXL. Interferometric Motion Detection in Atomic Layer 2D Nanostructures: Visualizing Signal Transduction Efficiency and Optimization Pathways. Sci Rep 2016; 6:28923. [PMID: 27464908 PMCID: PMC4964573 DOI: 10.1038/srep28923] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/04/2016] [Accepted: 06/10/2016] [Indexed: 12/03/2022] Open
Abstract
Atomic layer crystals are emerging building blocks for enabling new two-dimensional (2D) nanomechanical systems, whose motions can be coupled to other attractive physical properties in such 2D systems. Optical interferometry has been very effective in reading out the infinitesimal motions of these 2D structures and spatially resolving different modes. To quantitatively understand the detection efficiency and its dependence on the device parameters and interferometric conditions, here we present a systematic study of the intrinsic motion responsivity in 2D nanomechanical systems using a Fresnel-law-based model. We find that in monolayer to 14-layer structures, MoS2 offers the highest responsivity among graphene, h-BN, and MoS2 devices and for the three commonly used visible laser wavelengths (633, 532, and 405 nm). We also find that the vacuum gap resulting from the widely used 300 nm-oxide substrate in making 2D devices, fortunately, leads to close-to-optimal responsivity for a wide range of 2D flakes. Our results elucidate and graphically visualize the dependence of motion transduction responsivity upon 2D material type and number of layers, vacuum gap, oxide thickness, and detecting wavelength, thus providing design guidelines for constructing 2D nanomechanical systems with optimal optical motion readout.
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Affiliation(s)
- Zenghui Wang
- Department of Electrical Engineering &Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA
| | - Philip X-L Feng
- Department of Electrical Engineering &Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA
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Phan HP, Dinh T, Kozeki T, Qamar A, Namazu T, Dimitrijev S, Nguyen NT, Dao DV. Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating. Sci Rep 2016; 6:28499. [PMID: 27349378 PMCID: PMC4923857 DOI: 10.1038/srep28499] [Citation(s) in RCA: 49] [Impact Index Per Article: 6.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2016] [Accepted: 06/03/2016] [Indexed: 11/09/2022] Open
Abstract
Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an in situ measurement method. The experimental results show that the highly doped p-type 3C-SiC possesses a relatively stable gauge factor of approximately 25 to 28 at temperatures varying from 300 K to 573 K. The in situ method proposed in this study also demonstrated that, the combination of the piezoresistive and thermoresistive effects can increase the gauge factor of p-type 3C-SiC to approximately 20% at 573 K. The increase in gauge factor based on the combination of these phenomena could enhance the sensitivity of SiC based MEMS mechanical sensors.
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Affiliation(s)
- Hoang-Phuong Phan
- Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia
| | - Toan Dinh
- Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia
| | - Takahiro Kozeki
- Department of Mechanical Engineering, University of Hyogo, Hyogo, 671-2201, Japan
| | - Afzaal Qamar
- Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia
| | - Takahiro Namazu
- Department of Mechanical Engineering, University of Hyogo, Hyogo, 671-2201, Japan
| | - Sima Dimitrijev
- Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia
| | - Nam-Trung Nguyen
- Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia
| | - Dzung Viet Dao
- Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia.,School of Engineering, Griffith University, Queensland, 4215, Australia
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23
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Davidovikj D, Slim JJ, Cartamil-Bueno SJ, van der Zant HSJ, Steeneken PG, Venstra WJ. Visualizing the Motion of Graphene Nanodrums. NANO LETTERS 2016; 16:2768-73. [PMID: 26954525 DOI: 10.1021/acs.nanolett.6b00477] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Membranes of suspended two-dimensional materials show a large variability in mechanical properties, in part due to static and dynamic wrinkles. As a consequence, experiments typically show a multitude of nanomechanical resonance peaks, which make an unambiguous identification of the vibrational modes difficult. Here, we probe the motion of graphene nanodrum resonators with spatial resolution using a phase-sensitive interferometer. By simultaneously visualizing the local phase and amplitude of the driven motion, we show that unexplained spectral features represent split degenerate modes. When taking these into account, the resonance frequencies up to the eighth vibrational mode agree with theory. The corresponding displacement profiles, however, are remarkably different from theory, as small imperfections increasingly deform the nodal lines for the higher modes. The Brownian motion, which is used to calibrate the local displacement, exhibits a similar mode pattern. The experiments clarify the complicated dynamic behavior of suspended two-dimensional materials, which is crucial for reproducible fabrication and applications.
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Affiliation(s)
- Dejan Davidovikj
- Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ, Delft, The Netherlands
| | - Jesse J Slim
- Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ, Delft, The Netherlands
| | - Santiago J Cartamil-Bueno
- Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ, Delft, The Netherlands
| | - Herre S J van der Zant
- Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ, Delft, The Netherlands
| | - Peter G Steeneken
- Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ, Delft, The Netherlands
| | - Warner J Venstra
- Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ, Delft, The Netherlands
- Quantified Air, Lorentzweg 1, 2628 CJ, Delft, The Netherlands
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24
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Olcum S, Cermak N, Wasserman SC, Manalis SR. High-speed multiple-mode mass-sensing resolves dynamic nanoscale mass distributions. Nat Commun 2015; 6:7070. [PMID: 25963304 PMCID: PMC4432639 DOI: 10.1038/ncomms8070] [Citation(s) in RCA: 91] [Impact Index Per Article: 10.1] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/25/2014] [Accepted: 03/28/2015] [Indexed: 11/09/2022] Open
Abstract
Simultaneously measuring multiple eigenmode frequencies of nanomechanical resonators can determine the position and mass of surface-adsorbed proteins, and could ultimately reveal the mass tomography of nanoscale analytes. However, existing measurement techniques are slow (<1 Hz bandwidth), limiting throughput and preventing use with resonators generating fast transient signals. Here we develop a general platform for independently and simultaneously oscillating multiple modes of mechanical resonators, enabling frequency measurements that can precisely track fast transient signals within a user-defined bandwidth that exceeds 500 Hz. We use this enhanced bandwidth to resolve signals from multiple nanoparticles flowing simultaneously through a suspended nanochannel resonator and show that four resonant modes are sufficient for determining their individual position and mass with an accuracy near 150 nm and 40 attograms throughout their 150-ms transit. We envision that our method can be readily extended to other systems to increase bandwidth, number of modes, or number of resonators.
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Affiliation(s)
- Selim Olcum
- Koch Institute for Integrative Cancer Research, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Nathan Cermak
- Program in Computational and Systems Biology, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Steven C. Wasserman
- Department of Biological Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - Scott R. Manalis
- Koch Institute for Integrative Cancer Research, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
- Program in Computational and Systems Biology, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
- Department of Biological Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
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25
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Wang Z, Jia H, Zheng X, Yang R, Wang Z, Ye GJ, Chen XH, Shan J, Feng PXL. Black phosphorus nanoelectromechanical resonators vibrating at very high frequencies. NANOSCALE 2015; 7:877-884. [PMID: 25385657 DOI: 10.1039/c4nr04829f] [Citation(s) in RCA: 31] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We report on the experimental demonstration of a new type of nanoelectromechanical resonator based on black phosphorus crystals. Facilitated by a highly efficient dry transfer technique, crystalline black phosphorus flakes are harnessed to enable drumhead resonators vibrating at high and very high frequencies (HF and VHF bands, up to ∼100 MHz). We investigate the resonant vibrational responses from the black phosphorus crystals by devising both electrical and optical excitation schemes, in addition to measuring the undriven thermomechanical motions in these suspended nanostructures. Flakes with thicknesses from ∼200 nm down to ∼20 nm clearly exhibit elastic characteristics transitioning from the plate to the membrane regime. Both frequency- and time-domain measurements of the nanomechanical resonances show that very thin black phosphorus crystals hold interesting potential for moveable and vibratory devices and for semiconductor transducers where high-speed mechanical motions could be coupled to the attractive electronic and optoelectronic properties of black phosphorus.
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Affiliation(s)
- Zenghui Wang
- Department of Electrical Engineering & Computer Science, Case School of Engineering, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, OH 44106, USA.
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