1
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Hilliard D, Tauchnitz T, Hübner R, Vasileiadis I, Gkotinakos A, Dimitrakopulos G, Komninou P, Sun X, Winnerl S, Schneider H, Helm M, Dimakis E. At the Limit of Interfacial Sharpness in Nanowire Axial Heterostructures. ACS NANO 2024; 18:21171-21183. [PMID: 38970499 DOI: 10.1021/acsnano.4c04172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/08/2024]
Abstract
As semiconductor devices approach dimensions at the atomic scale, controlling the compositional grading across heterointerfaces becomes paramount. Particularly in nanowire axial heterostructures, which are promising for a broad spectrum of nanotechnology applications, the achievement of sharp heterointerfaces has been challenging owing to peculiarities of the commonly used vapor-liquid-solid growth mode. Here, the grading of Al across GaAs/AlxGa1-xAs/GaAs heterostructures in self-catalyzed nanowires is studied, aiming at finding the limits of the interfacial sharpness for this technologically versatile material system. A pulsed growth mode ensures precise control of the growth mechanisms even at low temperatures, while a semiempirical thermodynamic model is derived to fit the experimental Al-content profiles and quantitatively describe the dependences of the interfacial sharpness on the growth temperature, the nanowire radius, and the Al content. Finally, symmetrical Al profiles with interfacial widths of 2-3 atomic planes, at the limit of the measurement accuracy, are obtained, outperforming even equivalent thin-film heterostructures. The proposed method enables the development of advanced heterostructure schemes for a more effective utilization of the nanowire platform; moreover, it is considered expandable to other material systems and nanostructure types.
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Affiliation(s)
- Donovan Hilliard
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- TUD Dresden University of Technology, Dresden 01062, Germany
| | - Tina Tauchnitz
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- TUD Dresden University of Technology, Dresden 01062, Germany
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Isaak Vasileiadis
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece
| | - Athanasios Gkotinakos
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece
| | - George Dimitrakopulos
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece
| | - Philomela Komninou
- Department of Physics, Aristotle University of Thessaloniki, Thessaloniki 54124, Greece
| | - Xiaoxiao Sun
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Stephan Winnerl
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Harald Schneider
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
| | - Manfred Helm
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
- TUD Dresden University of Technology, Dresden 01062, Germany
| | - Emmanouil Dimakis
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden 01328, Germany
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2
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Rota MB, Krieger TM, Buchinger Q, Beccaceci M, Neuwirth J, Huet H, Horová N, Lovicu G, Ronco G, Covre da Silva SF, Pettinari G, Moczała-Dusanowska M, Kohlberger C, Manna S, Stroj S, Freund J, Yuan X, Schneider C, Ježek M, Höfling S, Basso Basset F, Huber-Loyola T, Rastelli A, Trotta R. A source of entangled photons based on a cavity-enhanced and strain-tuned GaAs quantum dot. ELIGHT 2024; 4:13. [PMID: 39070906 PMCID: PMC11269457 DOI: 10.1186/s43593-024-00072-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/30/2024] [Revised: 06/10/2024] [Accepted: 06/17/2024] [Indexed: 07/30/2024]
Abstract
A quantum-light source that delivers photons with a high brightness and a high degree of entanglement is fundamental for the development of efficient entanglement-based quantum-key distribution systems. Among all possible candidates, epitaxial quantum dots are currently emerging as one of the brightest sources of highly entangled photons. However, the optimization of both brightness and entanglement currently requires different technologies that are difficult to combine in a scalable manner. In this work, we overcome this challenge by developing a novel device consisting of a quantum dot embedded in a circular Bragg resonator, in turn, integrated onto a micromachined piezoelectric actuator. The resonator engineers the light-matter interaction to empower extraction efficiencies up to 0.69(4). Simultaneously, the actuator manipulates strain fields that tune the quantum dot for the generation of entangled photons with corrected fidelities to a maximally entangled state up to 0.96(1). This hybrid technology has the potential to overcome the limitations of the key rates that plague QD-based entangled sources for entanglement-based quantum key distribution and entanglement-based quantum networks. Supplementary Information The online version contains supplementary material available at 10.1186/s43593-024-00072-8.
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Affiliation(s)
- Michele B. Rota
- Dipartimento di Fisica, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
| | - Tobias M. Krieger
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Strasse 69, 4040 Linz, Austria
| | - Quirin Buchinger
- Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Mattia Beccaceci
- Dipartimento di Fisica, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
| | - Julia Neuwirth
- Dipartimento di Fisica, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
| | - Hêlio Huet
- Dipartimento di Fisica, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
| | - Nikola Horová
- Department of Optics, Faculty of Science, Palacký University, 17. Listopadu 1192/12, 77900 Olomouc, Czech Republic
| | - Gabriele Lovicu
- Dipartimento di Fisica, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
| | - Giuseppe Ronco
- Dipartimento di Fisica, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
| | - Saimon F. Covre da Silva
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Strasse 69, 4040 Linz, Austria
- Present Address: Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas, 13083-859 Campinas, Brazil
| | - Giorgio Pettinari
- Institute for Photonics and Nanotechnologies, National Research Council, Via del Fosso del Cavaliere, 100, 00133 Rome, Italy
| | | | - Christoph Kohlberger
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Strasse 69, 4040 Linz, Austria
| | - Santanu Manna
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Strasse 69, 4040 Linz, Austria
| | - Sandra Stroj
- Research Center for Microtechnology, Vorarlberg University of Applied Sciences, Campus V, Hochschulstrasse 1, 6850 Dornbirn, Austria
| | - Julia Freund
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Strasse 69, 4040 Linz, Austria
| | - Xueyong Yuan
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Strasse 69, 4040 Linz, Austria
- Present Address: School of Physics, Southeast University, Nanjing, 211189 China
| | - Christian Schneider
- Institut für Physik, Fakultät V, Carl von Ossietzky, Universität Oldenburg, 26129 Oldenburg, Germany
| | - Miroslav Ježek
- Department of Optics, Faculty of Science, Palacký University, 17. Listopadu 1192/12, 77900 Olomouc, Czech Republic
| | - Sven Höfling
- Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Francesco Basso Basset
- Dipartimento di Fisica, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
| | - Tobias Huber-Loyola
- Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany
| | - Armando Rastelli
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Strasse 69, 4040 Linz, Austria
| | - Rinaldo Trotta
- Dipartimento di Fisica, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
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3
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Mimona MA, Mobarak MH, Ahmed E, Kamal F, Hasan M. Nanowires: Exponential speedup in quantum computing. Heliyon 2024; 10:e31940. [PMID: 38845958 PMCID: PMC11153239 DOI: 10.1016/j.heliyon.2024.e31940] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 05/24/2024] [Accepted: 05/24/2024] [Indexed: 06/09/2024] Open
Abstract
This review paper examines the crucial role of nanowires in the field of quantum computing, highlighting their importance as versatile platforms for qubits and vital building blocks for creating fault-tolerant and scalable quantum information processing systems. Researchers are studying many categories of nanowires, including semiconductor, superconducting, and topological nanowires, to explore their distinct quantum features that play a role in creating various qubit designs. The paper explores the interdisciplinary character of quantum computing, combining the fields of quantum physics and materials science. This text highlights the significance of quantum gate operations in manipulating qubits for computation, thus creating the toolbox of quantum algorithms. The paper emphasizes the key research areas in quantum technology, such as entanglement engineering, quantum error correction, and a wide range of applications spanning from encryption to climate change modeling. The research highlights the importance of tackling difficulties related to decoding mitigation, error correction, and hardware scalability to fully utilize the transformative potential of quantum computing in scientific, technical, and computational fields.
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Affiliation(s)
- Mariam Akter Mimona
- Department of Computer Science & Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Md Hosne Mobarak
- Department of Mechanical Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Emtiuz Ahmed
- Department of Computer Science & Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Farzana Kamal
- Department of Computer Science & Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
| | - Mehedi Hasan
- Department of Mechanical Engineering, IUBAT-International University of Business Agriculture and Technology, Bangladesh
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4
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Bucci G, Zannier V, Rossi F, Musiał A, Boniecki J, Sęk G, Sorba L. Zincblende InAs xP 1-x/InP Quantum Dot Nanowires for Telecom Wavelength Emission. ACS APPLIED MATERIALS & INTERFACES 2024; 16:26491-26499. [PMID: 38729621 PMCID: PMC11129110 DOI: 10.1021/acsami.4c00615] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Revised: 03/13/2024] [Accepted: 03/13/2024] [Indexed: 05/12/2024]
Abstract
InAsxP1-x quantum dots (QDs) in InP nanowires (NWs) have been realized as a platform for emission at telecom wavelengths. These QDs are typically grown in NWs with the wurtzite crystal phase, but in this case, ultrathin diameters are required to achieve defect-free heterostructures, making the structures less robust. In this work, we demonstrate the growth of pure zincblende InAsxP1-x QDs in InP NWs, which enabled an increase in NW diameters to about 45 nm, achieved by employing Au-assisted vapor liquid solid growth in a chemical beam epitaxy system. We studied the growth of InP/InAsxP1-x heterostructures with different compositions to control the straight growth along the ⟨100⟩ direction and to tune the emission wavelength. Interestingly, we found that the growth mechanism for pure InAs QDs is different compared to that for InAsxP1-x alloy QDs. This allowed us to optimize different growth protocols to achieve straight growth of the final QD NWs. We successfully obtained the growth of InAsxP1-x QDs with a composition in the range of x = 0.24-1.00. By means of microphotoluminescence measurements, we demonstrate the tunability of the emission in dependence of the InAsxP1-x QD composition and morphology, remarkably observing an emission at the telecom O-band for a 10 nm thick QD with 80% of As content.
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Affiliation(s)
- Giada Bucci
- NEST
Istituto Nanoscienze Consiglio Nazionale delle Ricerche (CNR) and
Scuola Normale Superiore, 56127 Pisa, Italy
| | - Valentina Zannier
- NEST
Istituto Nanoscienze Consiglio Nazionale delle Ricerche (CNR) and
Scuola Normale Superiore, 56127 Pisa, Italy
| | - Francesca Rossi
- Istituto
dei Materiali per l’Elettronica ed il Magnetismo (IMEM)−Consiglio
Nazionale delle Ricerche (CNR), Parco Area delle Scienze, 43124 Parma, Italy
| | - Anna Musiał
- Department
of Experimental Physics, Wrocław University
of Science and Technology, 50-370 Wrocław, Poland
| | - Jakub Boniecki
- Department
of Experimental Physics, Wrocław University
of Science and Technology, 50-370 Wrocław, Poland
| | - Grzegorz Sęk
- Department
of Experimental Physics, Wrocław University
of Science and Technology, 50-370 Wrocław, Poland
| | - Lucia Sorba
- NEST
Istituto Nanoscienze Consiglio Nazionale delle Ricerche (CNR) and
Scuola Normale Superiore, 56127 Pisa, Italy
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5
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Sojo-Gordillo JM, Gadea-Diez G, Renahy D, Salleras M, Duque-Sierra C, Vincent P, Fonseca L, Chapuis PO, Morata A, Gomès S, Tarancón A. Local Heat Dissipation and Elasticity of Suspended Silicon Nanowires Revealed by Dual Scanning Electron and Thermal Microscopies. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305831. [PMID: 38088536 DOI: 10.1002/smll.202305831] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Revised: 10/24/2023] [Indexed: 04/19/2024]
Abstract
A novel combined setup, with a scanning thermal microscope (SThM) embedded in a scanning electron microscope (SEM), is used to characterize a suspended silicon rough nanowire (NW), which is epitaxially clamped at both sides and therefore monolithically integrated in a microfabricated device. The rough nature of the NW surface, which prohibits vacuum-SThM due to loose contact for heat dissipation, is circumvented by decorating the NW with periodic platinum dots. Reproducible approaches over these dots, enabled by the live feedback image provided by the SEM, yield a strong improvement in thermal contact resistance and a higher accuracy in its estimation. The results-thermal resistance at the tip-sample contact of 188±3.7K µW-1 and thermal conductivity of the NW of 13.7±1.6W m-1 K-1-are obtained by performing a series of approach curves on the dots. Noteworthy, the technique allows measuring elastic properties at the same time-the moment of inertia of the NW is found to be (6.1±1.0) × 10-30m4-which permits to correlate the respective effects of the rough shell on heat dissipation and on the NW stiffness. The work highlights the capabilities of the dual SThM/SEM instrument, in particular the interest of systematic approach curves with well-positioned and monitored tip motion.
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Affiliation(s)
- Jose M Sojo-Gordillo
- Department of advanced energy materials, Catalonia Institute for Energy Research, IREC, Jardins de les Dones de Negre 1, Sant Adrià de Besòs, Barcelona, 08930, Spain
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, 4056, Switzerland
| | - Gerard Gadea-Diez
- Department of Physics, University of Basel, Klingelbergstrasse 82, Basel, 4056, Switzerland
| | - David Renahy
- Université de Lyon, CNRS, INSA-Lyon, Université Claude Bernard Lyon 1, CETHIL UMR5008, Villeurbanne, F-69621, France
- Université de Lyon, Université Clade Bernard Lyon 1, CNRS, Institut Lumière Matière, Villeurbanne, F-69622, France
| | - Marc Salleras
- Institute of Microelectronics of Barcelona, IMB-CNM (CSIC), C/Til-lers s/n, Campus UAB, Bellaterra, Barcelona, 08193, Spain
| | - Carolina Duque-Sierra
- Department of advanced energy materials, Catalonia Institute for Energy Research, IREC, Jardins de les Dones de Negre 1, Sant Adrià de Besòs, Barcelona, 08930, Spain
| | - Pascal Vincent
- Université de Lyon, Université Clade Bernard Lyon 1, CNRS, Institut Lumière Matière, Villeurbanne, F-69622, France
| | - Luis Fonseca
- Institute of Microelectronics of Barcelona, IMB-CNM (CSIC), C/Til-lers s/n, Campus UAB, Bellaterra, Barcelona, 08193, Spain
| | - Pierre-Olivier Chapuis
- Université de Lyon, CNRS, INSA-Lyon, Université Claude Bernard Lyon 1, CETHIL UMR5008, Villeurbanne, F-69621, France
| | - Alex Morata
- Department of advanced energy materials, Catalonia Institute for Energy Research, IREC, Jardins de les Dones de Negre 1, Sant Adrià de Besòs, Barcelona, 08930, Spain
| | - Séverine Gomès
- Université de Lyon, CNRS, INSA-Lyon, Université Claude Bernard Lyon 1, CETHIL UMR5008, Villeurbanne, F-69621, France
| | - Albert Tarancón
- Department of advanced energy materials, Catalonia Institute for Energy Research, IREC, Jardins de les Dones de Negre 1, Sant Adrià de Besòs, Barcelona, 08930, Spain
- Catalan Institution for Research and Advanced Studies, ICREA, Passeig de Lluís Companys, 23, Barcelona, 08010, Spain
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6
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Sasaki M, Akamatsu T, Tomioka K, Motohisa J. Size control of InP nanowires by in situannealing and its application to the formation of InAsP quantum dots. NANOTECHNOLOGY 2024; 35:195604. [PMID: 38306695 DOI: 10.1088/1361-6528/ad2570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Accepted: 02/02/2024] [Indexed: 02/04/2024]
Abstract
We carried outin situannealing of InP nanowires (NWs) in a metal-organic vapor phase epitaxial (MOVPE) growth reactor to control and reduce the tip size of InP NWs. InP NWs were grown by selective-area (SA) MOVPE on partially masked (111)A InP substrates, and annealing was successively applied in tertiarybutylphosphine (TBP) ambient. Initially, the InP NWs had a hexagonal cross-section with{112¯}facets vertical to the substrates; they became tapered, and the edges were rounded by annealing. By appropriately selecting the annealing temperature and initial NW diameter, the tip size of the NW was reduced and NWs with a tip size of 20 nm were successfully formed. Subsequently, a thin InAsP layer was grown on the annealed NWs and their photoluminescence was investigated at low temperatures. The characterization results indicated the formation of InAsP quantum dots (QDs) emitting in the telecom band. Our approach is useful for reducing the size of the NWs and for the controlled formation of InAsP QDs embedded in InP NWs in photonic devices compatible with telecom bands.
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Affiliation(s)
- Masahiro Sasaki
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
| | - Tomoya Akamatsu
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
| | - Katsuhiro Tomioka
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
| | - Junichi Motohisa
- Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan
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7
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Jeong HW, Ajay A, Döblinger M, Sturm S, Gómez Ruiz M, Zell R, Mukhundhan N, Stelzner D, Lähnemann J, Müller-Caspary K, Finley JJ, Koblmüller G. Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices. ACS APPLIED NANO MATERIALS 2024; 7:3032-3041. [PMID: 38357219 PMCID: PMC10863613 DOI: 10.1021/acsanm.3c05392] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2023] [Revised: 12/21/2023] [Accepted: 12/26/2023] [Indexed: 02/16/2024]
Abstract
III-V semiconductor nanowire (NW) heterostructures with axial InGaAs active regions hold large potential for diverse on-chip device applications, including site-selectively integrated quantum light sources, NW lasers with high material gain, as well as resonant tunneling diodes and avalanche photodiodes. Despite various promising efforts toward high-quality single or multiple axial InGaAs heterostacks using noncatalytic growth mechanisms, the important roles of facet-dependent shape evolution, crystal defects, and the applicability to more universal growth schemes have remained elusive. Here, we report the growth of optically active InGaAs axial NW heterostructures via completely catalyst-free, selective-area molecular beam epitaxy directly on silicon (Si) using GaAs(Sb) NW arrays as tunable, high-uniformity growth templates and highlight fundamental relationships between structural, morphological, and optical properties of the InGaAs region. Structural, compositional, and 3D-tomographic characterizations affirm the desired directional growth along the NW axis with no radial growth observed. Clearly distinct luminescence from the InGaAs active region is demonstrated, where tunable array-geometry parameters and In content up to 20% are further investigated. Based on the underlying twin-induced growth mode, we further describe the facet-dependent shape and interface evolution of the InGaAs segment and its direct correlation with emission energy.
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Affiliation(s)
- Hyowon W. Jeong
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Akhil Ajay
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Markus Döblinger
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Sebastian Sturm
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Mikel Gómez Ruiz
- Paul-Drude-Institute
for Solid State Electronics, Leibniz-Institut
Im Forschungsverbund Berlin e.V., 10117 Berlin, Germany
| | - Richard Zell
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Nitin Mukhundhan
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Daniel Stelzner
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Jonas Lähnemann
- Paul-Drude-Institute
for Solid State Electronics, Leibniz-Institut
Im Forschungsverbund Berlin e.V., 10117 Berlin, Germany
| | - Knut Müller-Caspary
- Department
of Chemistry and Center for NanoScience, Ludwig-Maximilians-Universität München, 81377 Munich, Germany
| | - Jonathan J. Finley
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
| | - Gregor Koblmüller
- Walter
Schottky Institute, TUM School of Natural Sciences, Technical University of Munich, 85748 Garching bei München, Germany
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8
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Descamps T, Schetelat T, Gao J, Poole PJ, Dalacu D, Elshaari AW, Zwiller V. Dynamic Strain Modulation of a Nanowire Quantum Dot Compatible with a Thin-Film Lithium Niobate Photonic Platform. ACS PHOTONICS 2023; 10:3691-3699. [PMID: 37869556 PMCID: PMC10588554 DOI: 10.1021/acsphotonics.3c00821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Indexed: 10/24/2023]
Abstract
The integration of indistinguishable single photon sources in photonic circuits is a major prerequisite for on-chip quantum applications. Among the various high-quality sources, nanowire quantum dots can be efficiently coupled to optical waveguides because of their preferred emission direction along their growth direction. However, local tuning of the emission properties remains challenging. In this work, we transfer a nanowire quantum dot onto a bulk lithium niobate substrate and show that its emission can be dynamically tuned by acousto-optical coupling with surface acoustic waves. The purity of the single photon source is preserved during the strain modulation. We further demonstrate that the transduction is maintained even with a SiO2 encapsulation layer deposited on top of the nanowire acting as the cladding of a photonic circuit. Based on these experimental findings and numerical simulations, we introduce a device architecture consisting of a nanowire quantum dot efficiently coupled to a thin-film lithium niobate rib waveguide and strain-tunable by surface acoustic waves.
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Affiliation(s)
- Thomas Descamps
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
| | - Tanguy Schetelat
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
| | - Jun Gao
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
| | - Philip J. Poole
- National
Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada
| | - Dan Dalacu
- National
Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada
| | - Ali W. Elshaari
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
| | - Val Zwiller
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
- Single
Quantum BV, Rotterdamseweg
394, 2629HH Delft, The Netherlands
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9
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Melo EG, Eshbaugh W, Flagg EB, Davanco M. Inverse design of a polarization demultiplexer for on-chip path-entangled photon-pair sources based on single quantum dots. OPTICS LETTERS 2023; 48:4516-4519. [PMID: 37656542 DOI: 10.1364/ol.496129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 08/03/2023] [Indexed: 09/03/2023]
Abstract
Epitaxial quantum dots can emit polarization-entangled photon pairs. If orthogonal polarizations are coupled to independent paths, then the photons will be path-entangled. Through inverse design with adjoint method optimization, we design a quantum dot polarization demultiplexer, a nanophotonic geometry that efficiently couples orthogonally polarized transition dipole moments of a single quantum dot to two independent waveguides. We predict 95% coupling efficiency, cross talk less than 0.1%, and Purcell radiative rate enhancement factors over 11.5 for both dipoles, with sensitivity to dipole misalignment and orientation comparable to that of conventional nanophotonic geometries. We anticipate our design will be valuable for the implementation of triggered, high-rate sources of path-entangled photon-pairs on chip.
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10
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Chiang TM, Schatz GC. Theory of entangled two-photon emission/absorption [E2P-EA] between molecules. J Chem Phys 2023; 159:074103. [PMID: 37581420 DOI: 10.1063/5.0156501] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Accepted: 07/25/2023] [Indexed: 08/16/2023] Open
Abstract
This paper presents a comprehensive study of the theory of entangled two-photon emission/absorption (E2P-EA) between a many-level cascade donor and a many-level acceptor (which could be quantum dots or molecules) using second-order perturbation theory and where the donor-acceptor pair is in a homogeneous but dispersive medium. To understand the mechanism of E2P-EA, we analyze how dipole orientation, radiative lifetime, energy detuning between intermediate states, separation distance, and entanglement time impact the E2P-EA rate. Our study shows that there are quantum interference effects in the E2P-EA rate expression that lead to oscillations in the rate as a function of entanglement time. Furthermore, we find that the E2P-EA rate for a representative system consisting of two quantum dots can be comparable to one-photon emission/absorption (OP-EA) when donor and acceptor are within a few nm. However, the E2P-EA rate falls off much more quickly with separation distance than does OP-EA.
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Affiliation(s)
- Tse-Min Chiang
- Graduate Program in Applied Physics, Northwestern University, Evanston, Illinois 60208, USA
| | - George C Schatz
- Department of Chemistry and Graduate Program in Applied Physics, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA
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11
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Jurkat J, Klembt S, De Gregorio M, Meinecke M, Buchinger Q, Harder TH, Beierlein J, Egorov OA, Emmerling M, Krause C, Schneider C, Huber-Loyola T, Höfling S. Single-Photon Source in a Topological Cavity. NANO LETTERS 2023; 23:820-826. [PMID: 36656001 DOI: 10.1021/acs.nanolett.2c03693] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The introduction of topological physics into the field of photonics has led to the development of photonic devices endowed with robustness against structural disorder. While a range of platforms have been successfully implemented demonstrating topological protection of light in the classical domain, the implementation of quantum light sources in photonic devices harnessing topologically nontrivial resonances is largely unexplored. Here, we demonstrate a single photon source based on a single semiconductor quantum dot coupled to a topologically nontrivial Su-Schrieffer-Heeger (SSH) cavity mode. We provide an in-depth study of Purcell enhancement for this topological quantum light source and demonstrate its emission of nonclassical light on demand. Our approach is a promising step toward the application of topological cavities in quantum photonics.
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Affiliation(s)
- Jonathan Jurkat
- Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074Würzburg, Germany
| | - Sebastian Klembt
- Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074Würzburg, Germany
| | - Marco De Gregorio
- Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074Würzburg, Germany
| | - Moritz Meinecke
- Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074Würzburg, Germany
| | - Quirin Buchinger
- Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074Würzburg, Germany
| | - Tristan H Harder
- Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074Würzburg, Germany
| | - Johannes Beierlein
- Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074Würzburg, Germany
| | - Oleg A Egorov
- Institute of Condensed Matter Theory and Optics, Friedrich-Schiller-University Jena, D-07743Jena, Germany
| | - Monika Emmerling
- Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074Würzburg, Germany
| | - Constantin Krause
- Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074Würzburg, Germany
| | | | - Tobias Huber-Loyola
- Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074Würzburg, Germany
| | - Sven Höfling
- Technische Physik, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, 97074Würzburg, Germany
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12
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Yan WB, Man ZX, Zhang YJ, Fan H, Xia YJ. All-optical control of thermal conduction in waveguide quantum electrodynamics. OPTICS LETTERS 2023; 48:823-826. [PMID: 36723598 DOI: 10.1364/ol.481259] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2022] [Accepted: 01/03/2023] [Indexed: 06/18/2023]
Abstract
We investigate the heat conduction between two one-dimensional waveguides intermediated by a laser-driving atom. The laser provides the optical control of the heat conduction. The tunable asymmetric conduction of the heat against the temperature gradient is realized. Assisted by the modulated laser, the heat conduction from either waveguide to the other waveguide can be suppressed. The heat currents can be significantly amplified by the energy flow of the laser.
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13
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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14
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Zhang J, Chattaraj S, Huang Q, Jordao L, Lu S, Madhukar A. On-chip scalable highly pure and indistinguishable single-photon sources in ordered arrays: Path to quantum optical circuits. SCIENCE ADVANCES 2022; 8:eabn9252. [PMID: 36054351 PMCID: PMC10848962 DOI: 10.1126/sciadv.abn9252] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2021] [Accepted: 07/20/2022] [Indexed: 06/15/2023]
Abstract
Realization of quantum optical circuits is at the heart of quantum photonic information processing. A long-standing obstacle, however, has been the absence of a suitable platform of single photon sources (SPSs). Such SPSs need to be in spatially ordered arrays and produce, on-demand, highly pure, and indistinguishable single photons with sufficiently uniform emission characteristics to enable controlled interference between photons from distinct sources underpinning functional quantum optical networks. We report on such a platform of SPSs based on a unique class of epitaxial quantum dots dubbed mesa-top single quantum dot. Under resonant excitation, the spatially ordered SPSs (without Purcell enhancement) show single photon purity of >99% [g(2)(0) ~ 0.015], high two-photon Hong-Ou-Mandel interference visibilities of 0.82 ± 0.03 (at 11.5 kelvin, without cavity), and spectral nonuniformity of <3 nanometers, within established locally tunable technology. Our platform of SPSs paves the path to creating on-chip scalable quantum photonic networks for communication, computation, simulation, sensing and imaging.
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Affiliation(s)
- Jiefei Zhang
- Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089, USA
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089, USA
| | - Swarnabha Chattaraj
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
| | - Qi Huang
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089, USA
| | - Lucas Jordao
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089, USA
| | - Siyuan Lu
- IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA
| | - Anupam Madhukar
- Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089, USA
- Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA 90089, USA
- Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
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15
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Anisotropic Radiation in Heterostructured "Emitter in a Cavity" Nanowire. NANOMATERIALS 2022; 12:nano12020241. [PMID: 35055259 PMCID: PMC8779800 DOI: 10.3390/nano12020241] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2021] [Revised: 12/29/2021] [Accepted: 01/10/2022] [Indexed: 12/25/2022]
Abstract
Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nanowire with ternary GaPAs insertions in the form of nano-sized discs studied in this work. With the use of the micro-photoluminescence technique and numerical calculations, we experimentally and theoretically study photoluminescence emission in individual heterostructured NWs. Due to the high refractive index and near-zero absorption through the emission band, the photoluminescence signal tends to couple into the nanowire cavity acting as a Fabry–Perot resonator, while weak radiation propagating perpendicular to the nanowire axis is registered in the vicinity of each nano-sized disc. Thus, within the heterostructured nanowire, both amplitude and spectrally anisotropic photoluminescent signals can be achieved. Numerical modeling of the nanowire with insertions emitting in infrared demonstrates a decay in the emission directivity and simultaneous rise of the emitters coupling with an increase in the wavelength. The emergence of modulated and non-modulated radiation is discussed, and possible nanophotonic applications are considered.
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16
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Li Y, Shao ZC, Zhang C, Yu SH. Catalyzed Growth for Atomic-Precision Colloidal Chalcogenide Nanowires and Heterostructures: Progress and Perspective. J Phys Chem Lett 2021; 12:10695-10705. [PMID: 34709833 DOI: 10.1021/acs.jpclett.1c02358] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
One-dimensional colloidal semiconductor nanowires are of wide interest in nanoscale electronics and photonics. As compared to the zero-dimensional counterparts, their geometrical anisotropy offers an additional degree of freedom to tailor the electronic and optical properties and enables customized heterostructures with increased complexity. The colloidal synthetic chemistry developed over past decades has fueled the emergence of diverse one-dimensional nanocrystals and heterostructures, whereas the synthetic pursuit for compositionally and structurally defining them at the atomic-level precision remains yet a giant challenge. Catalyzed growth, wherein nanowires grow at the catalyst-nanowire interfaces in a layer-by-layer manner, offers a promising path toward such an ultimate goal. In this Perspective, we will take a close look at how catalyzed growth would enable the on-demand, atomic-precision control of colloidal nanowires and their heterostructures. We then further highlight their potentials for constructing higher-order heteroarchitectures with new and/or enhanced performances. Finally, we conclude with a forward-looking perspective on future challenges.
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Affiliation(s)
- Yi Li
- Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhen-Chao Shao
- Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Chong Zhang
- Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shu-Hong Yu
- Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at the Microscale, Institute of Energy, Hefei Comprehensive National Science Center, CAS Center for Excellence in Nanoscience, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei, Anhui 230026, China
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17
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Jaffal A, Regreny P, Patriarche G, Gendry M, Chauvin N. Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring. NANOSCALE 2021; 13:16952-16958. [PMID: 34610634 DOI: 10.1039/d1nr04263g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying on the vapor-liquid-solid method using molecular beam epitaxy. By interrupting the rotation of the sample during the radial growth sequence of the InP shell, hexagonal asymmetric (HA) NWs with long/short cross-section axes were obtained instead of the usual symmetrical shape. Polarization-resolved photoluminescence measurements have revealed a significant influence of the asymmetric shaped NWs on the InAs QD emission polarization with the photons being mainly polarized parallel to the NW long cross-section axis. A degree of linear polarization (DLP) up to 91% is obtained, being at the state of the art for the reported DLP values from QD-NWs. More importantly, the growth protocol herein is fully compatible with the current applications of HA NWs covering a wide range of devices such as polarized light emitting diodes and photodetectors.
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Affiliation(s)
- Ali Jaffal
- Univ Lyon, CNRS, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, 69130 Ecully, France
- Univ Lyon, CNRS, INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270, 69621 Villeurbanne, France.
| | - Philippe Regreny
- Univ Lyon, CNRS, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, 69130 Ecully, France
| | - Gilles Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies - C2N, 91120, Palaiseau, France
| | - Michel Gendry
- Univ Lyon, CNRS, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, 69130 Ecully, France
| | - Nicolas Chauvin
- Univ Lyon, CNRS, INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270, 69621 Villeurbanne, France.
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18
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Zhang Y, Velichko AV, Fonseka HA, Parkinson P, Gott JA, Davis G, Aagesen M, Sanchez AM, Mowbray D, Liu H. Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement. NANO LETTERS 2021; 21:5722-5729. [PMID: 34181433 PMCID: PMC8289304 DOI: 10.1021/acs.nanolett.1c01461] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Revised: 06/25/2021] [Indexed: 06/13/2023]
Abstract
Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a detailed study of self-catalyzed GaAsP NWs containing defect-free axial GaAs QDs (NWQDs). Sharp interfaces (1.8-3.6 nm) allow closely stack QDs with very similar structural properties. High structural quality is maintained when up to 50 GaAs QDs are placed in a single NW. The QDs maintain an emission line width of <10 meV at 140 K (comparable to the best III-V QDs, including nitrides) after having been stored in an ambient atmosphere for over 6 months and exhibit deep carrier confinement (∼90 meV) and the largest reported exciton-biexciton splitting (∼11 meV) for non-nitride III-V NWQDs. Our study provides a solid foundation to build high-performance axially stacked NWQD devices that are compatible with CMOS technologies.
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Affiliation(s)
- Yunyan Zhang
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
- Department
of Physics, Universität Paderborn, Warburger Straße 100, 33098 Paderborn, Germany
| | - Anton V. Velichko
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - H. Aruni Fonseka
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - Patrick Parkinson
- School
Department of Physics and Astronomy and the Photon Science Institute, University of Manchester, Manchester M13 9PL, United Kingdom
| | - James A. Gott
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - George Davis
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - Martin Aagesen
- Center for
Quantum Devices, Niels Bohr Institute, University
of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - Ana M. Sanchez
- Department
of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
| | - David Mowbray
- Department
of Physics and Astronomy, University of
Sheffield, Sheffield S3 7RH, United Kingdom
| | - Huiyun Liu
- Department
of Electronic and Electrical Engineering, University College London, London WC1E 7JE, United Kingdom
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19
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Dalacu D, Poole PJ, Williams RL. Tailoring the Geometry of Bottom-Up Nanowires: Application to High Efficiency Single Photon Sources. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1201. [PMID: 34062809 PMCID: PMC8147349 DOI: 10.3390/nano11051201] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/30/2021] [Revised: 04/22/2021] [Accepted: 04/29/2021] [Indexed: 11/24/2022]
Abstract
For nanowire-based sources of non-classical light, the rate at which photons are generated and the ability to efficiently collect them are determined by the nanowire geometry. Using selective-area vapour-liquid-solid epitaxy, we show how it is possible to control the nanowire geometry and tailor it to optimise device performance. High efficiency single photon generation with negligible multi-photon emission is demonstrated using a quantum dot embedded in a nanowire having a geometry tailored to optimise both collection efficiency and emission rate.
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Affiliation(s)
- Dan Dalacu
- National Research Council Canada, Ottawa, ON K1A 0R6, Canada; (P.J.P.); (R.L.W.)
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20
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Gulinatti A, Ceccarelli F, Ghioni M, Rech I. Custom silicon technology for SPAD-arrays with red-enhanced sensitivity and low timing jitter. OPTICS EXPRESS 2021; 29:4559-4581. [PMID: 33771031 PMCID: PMC7920522 DOI: 10.1364/oe.413821] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2020] [Revised: 12/16/2020] [Accepted: 12/21/2020] [Indexed: 06/12/2023]
Abstract
Single-photon detection is an invaluable tool for many applications ranging from basic research to consumer electronics. In this respect, the Single Photon Avalanche Diode (SPAD) plays a key role in enabling a broad diffusion of these techniques thanks to its remarkable performance, room-temperature operation, and scalability. In this paper we present a silicon technology that allows the fabrication of SPAD-arrays with an unprecedented combination of low timing jitter (95 ps FWHM) and high detection efficiency at red and near infrared wavelengths (peak of 70% at 650 nm, 45% at 800 nm). We discuss the device structure, the fabrication process, and we present a thorough experimental characterization of the fabricated detectors. We think that these results can pave the way to new exciting developments in many fields, ranging from quantum optics to single molecule spectroscopy.
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Affiliation(s)
- Angelo Gulinatti
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, piazza Leonardo da Vinci 32, 20133 Milano, Italy
| | - Francesco Ceccarelli
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, piazza Leonardo da Vinci 32, 20133 Milano, Italy
- Currently with Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche (IFN-CNR) and Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy
| | - Massimo Ghioni
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, piazza Leonardo da Vinci 32, 20133 Milano, Italy
| | - Ivan Rech
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, piazza Leonardo da Vinci 32, 20133 Milano, Italy
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21
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Sarkar K, Devi P, Kim KH, Kumar P. III-V nanowire-based ultraviolet to terahertz photodetectors: Device strategies, recent developments, and future possibilities. Trends Analyt Chem 2020. [DOI: 10.1016/j.trac.2020.115989] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/25/2023]
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22
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Yuan X, Liu K, Skalsky S, Parkinson P, Fang L, He J, Tan HH, Jagadish C. Carrier dynamics and recombination mechanisms in InP twinning superlattice nanowires. OPTICS EXPRESS 2020; 28:16795-16804. [PMID: 32549494 DOI: 10.1364/oe.388518] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2020] [Accepted: 05/13/2020] [Indexed: 06/11/2023]
Abstract
Nominal dopant-free zinc blende twinning superlattice InP nanowires have been grown with high crystal-quality and taper-free morphology. Here, we demonstrate its superior optical performance and clarify the different carrier recombination mechanisms at different temperatures using a time resolved photoluminescence study. The existence of regular twin planes and lateral overgrowth do not significantly increase the defect density. At room temperature, the as-grown InP nanowires have a strong emission at 1.348 eV and long minority carrier lifetime (∼3 ns). The carrier recombination dynamics is mainly dominated by nonradiative recombination due to surface trapping states; a wet chemical etch to reduce the surface trapping density thus boosts the emission intensity and increases the carrier lifetime to 7.1 ns. This nonradiative recombination mechanism dominates for temperatures above 155 K, and the carrier lifetime decreases with increasing temperature. However, radiative recombination dominates the carrier dynamics at temperature below ∼75 K, and a strong donor-bound exciton emission with a narrow emission linewidth of 4.5 meV is observed. Consequently, carrier lifetime increases with temperature. By revealing carrier recombination mechanisms over the temperature range 10-300 K, we demonstrate the attraction of using InP nanostructure for photonics and optoelectronic applications.
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23
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Laferrière P, Yeung E, Giner L, Haffouz S, Lapointe J, Aers GC, Poole PJ, Williams RL, Dalacu D. Multiplexed Single-Photon Source Based on Multiple Quantum Dots Embedded within a Single Nanowire. NANO LETTERS 2020; 20:3688-3693. [PMID: 32272017 DOI: 10.1021/acs.nanolett.0c00607] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Photonics-based quantum information technologies require efficient, high emission rate sources of single photons. Position-controlled quantum dots embedded within a broadband nanowire waveguide provide a fully scalable route to fabricating highly efficient single-photon sources. However, emission rates for single-photon devices are limited by radiative recombination lifetimes. Here, we demonstrate a multiplexed single-photon source based on a multidot nanowire. Using epitaxially grown nanowires, we incorporate multiple energy-tuned dots, each optimally positioned within the nanowire waveguide, providing single photons with high efficiency. This linear scaling of the single-photon emission rate with number of emitters is demonstrated using a five-dot nanowire with an average multiphoton emission probability of <4% when excited at saturation. This represents the first ever demonstration of multiple single-photon emitters deterministically incorporated in a single photonic device and is a major step toward achieving GHz single-photon emission rates from a scalable multi-quantum-dot system.
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Affiliation(s)
- Patrick Laferrière
- National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
- University of Ottawa, Ottawa, Ontario, Canada K1N 6N5
| | - Edith Yeung
- National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
- University of Ottawa, Ottawa, Ontario, Canada K1N 6N5
| | - Lambert Giner
- National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
- University of Ottawa, Ottawa, Ontario, Canada K1N 6N5
| | - Sofiane Haffouz
- National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
| | - Jean Lapointe
- National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
| | - Geof C Aers
- National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
| | - Philip J Poole
- National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
| | - Robin L Williams
- National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
- University of Ottawa, Ottawa, Ontario, Canada K1N 6N5
| | - Dan Dalacu
- National Research Council of Canada, Ottawa, Ontario, Canada K1A 0R6
- University of Ottawa, Ottawa, Ontario, Canada K1N 6N5
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24
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Zhao TM, Chen Y, Yu Y, Li Q, Davanco M, Liu J. Advanced technologies for quantum photonic devices based on epitaxial quantum dots. ADVANCED QUANTUM TECHNOLOGIES 2020; 3:10.1002/qute.201900034. [PMID: 36452403 PMCID: PMC9706462 DOI: 10.1002/qute.201900034] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2019] [Indexed: 05/12/2023]
Abstract
Quantum photonic devices are candidates for realizing practical quantum computers and networks. The development of integrated quantum photonic devices can greatly benefit from the ability to incorporate different types of materials with complementary, superior optical or electrical properties on a single chip. Semiconductor quantum dots (QDs) serve as a core element in the emerging modern photonic quantum technologies by allowing on-demand generation of single-photons and entangled photon pairs. During each excitation cycle, there is one and only one emitted photon or photon pair. QD photonic devices are on the verge of unfolding for advanced quantum technology applications. In this review, we focus on the latest significant progress of QD photonic devices. We first discuss advanced technologies in QD growth, with special attention to droplet epitaxy and site-controlled QDs. Then we overview the wavelength engineering of QDs via strain tuning and quantum frequency conversion techniques. We extend our discussion to advanced optical excitation techniques recently developed for achieving the desired emission properties of QDs. Finally, the advances in heterogeneous integration of active quantum light-emitting devices and passive integrated photonic circuits are reviewed, in the context of realizing scalable quantum information processing chips.
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Affiliation(s)
- Tian Ming Zhao
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Yan Chen
- Institute for Integrative Nanosciences, Leibniz IFW Dresden, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Qing Li
- Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA
| | - Marcelo Davanco
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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25
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Artioli A, Kotal S, Gregersen N, Verlot P, Gérard JM, Claudon J. Design of Quantum Dot-Nanowire Single-Photon Sources that are Immune to Thermomechanical Decoherence. PHYSICAL REVIEW LETTERS 2019; 123:247403. [PMID: 31922831 DOI: 10.1103/physrevlett.123.247403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2019] [Indexed: 06/10/2023]
Abstract
Nanowire antennas embedding a single quantum dot (QD) have recently emerged as versatile platforms to realize bright sources of quantum light. In this theoretical work, we show that the thermally driven, low-frequency vibrations of the nanowire have a major impact on the QD light emission spectrum. Even at liquid helium temperatures, these prevent the emission of indistinguishable photons. To overcome this intrinsic limitation, we propose three designs that restore photon indistinguishability thanks to a specific engineering of the mechanical properties of the nanowire. We anticipate that such a mechanical optimization will also play a key role in the development of other high-performance light-matter interfaces based on nanostructures.
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Affiliation(s)
- Alberto Artioli
- Univ. Grenoble Alpes, CEA, IRIG, PHELIQS, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
| | - Saptarshi Kotal
- Univ. Grenoble Alpes, CEA, IRIG, PHELIQS, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
| | - Niels Gregersen
- DTU Fotonik, Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark
| | - Pierre Verlot
- School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
| | - Jean-Michel Gérard
- Univ. Grenoble Alpes, CEA, IRIG, PHELIQS, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
| | - Julien Claudon
- Univ. Grenoble Alpes, CEA, IRIG, PHELIQS, "Nanophysique et semiconducteurs" group, F-38000 Grenoble, France
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26
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Yu Y, Zhong H, Yang J, Liu L, Liu J, Yu S. Highly uniform and symmetric epitaxial InAs quantum dots embedded inside Indium droplet etched nanoholes. NANOTECHNOLOGY 2019; 30:485001. [PMID: 31469109 DOI: 10.1088/1361-6528/ab3efb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
III-V semiconductor quantum dots (QDs) obtained by local droplet etching technology provide a material platform for generation of non-classic light. However, using this technique to fabricate single emitters for a broad spectral range remains a significant challenge. Herein, we successfully extend the QD emission wavelength to 850-880 nm via highly uniform and symmetric InAs QDs located inside indium-droplet-etching nanoholes. The evolution of InGaAs nanostructures by high temperature indium droplet epitaxy on GaAs substrate is revealed. By carefully designing the appropriate growth conditions, symmetric QDs with the a small fine structure splitting of only ∼4.4 ± 0.8 μeV are demonstrated. Averaging over the emission energies of 32 QDs, an ensemble broadening of 12 meV is observed. Individual QDs are shown to emit nonclassically with clear evidence of photon antibunching. These highly uniform and symmetric nanostructures represent a very promising novel strategy for quantum information applications.
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Affiliation(s)
- Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, People's Republic of China. Institute for Quantum Information & State Key Laboratory of High Performance Computing, College of Computer, National University of Defense Technology, Changsha, 410073, People's Republic of China
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27
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Yu P, Li Z, Wu T, Wang YT, Tong X, Li CF, Wang Z, Wei SH, Zhang Y, Liu H, Fu L, Zhang Y, Wu J, Tan HH, Jagadish C, Wang ZM. Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission. ACS NANO 2019; 13:13492-13500. [PMID: 31689076 DOI: 10.1021/acsnano.9b07204] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Generating single photons at high temperature remains a major challenge, particularly for group III-As and III-P materials widely used in optical communication. Here, we report a high temperature single photon emitter based on a "surface-free" GaAs quantum dot (QD) in a GaAsP nanowire. By using self-catalyzed vapor-liquid-solid growth and simple surface engineering, we can significantly enhance the optical signal from the QDs with a highly polarized photoluminescence at 750 nm. The "surface-free" nanowire quantum dots show photon antibunching up to 160 K and well resolved exciton lines as high as 220 K.
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Affiliation(s)
- Peng Yu
- Institute of Fundamental and Frontier Sciences , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Tongwei Wu
- Institute of Fundamental and Frontier Sciences , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
| | - Yi-Tao Wang
- Key Laboratory of Quantum Information , University of Science and Technology of China, CAS , Hefei 230026 , China
| | - Xin Tong
- Institute of Fundamental and Frontier Sciences , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
| | - Chuan-Feng Li
- Key Laboratory of Quantum Information , University of Science and Technology of China, CAS , Hefei 230026 , China
| | - Zhongchang Wang
- Department of Quantum and Energy Materials , International Iberian Nanotechnology Laboratory (INL) , Braga 4715-330 , Portugal
| | - Su-Huai Wei
- Beijing Computational Science Research Center , Beijing 100094 , China
| | - Yunyan Zhang
- Department of Electronic and Electrical Engineering , University College London , London WC1E 7JE , United Kingdom
| | - Huiyun Liu
- Department of Electronic and Electrical Engineering , University College London , London WC1E 7JE , United Kingdom
| | - Lan Fu
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Yanning Zhang
- Institute of Fundamental and Frontier Sciences , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
| | - Hark Hoe Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Chennupati Jagadish
- Institute of Fundamental and Frontier Sciences , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
- Department of Electronic Materials Engineering, Research School of Physics and Engineering , The Australian National University , Canberra , ACT 2601 , Australia
| | - Zhiming M Wang
- Institute of Fundamental and Frontier Sciences , University of Electronic Science and Technology of China , Chengdu 610054 , P. R. China
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28
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Schnauber P, Singh A, Schall J, Park SI, Song JD, Rodt S, Srinivasan K, Reitzenstein S, Davanco M. Indistinguishable Photons from Deterministically Integrated Single Quantum Dots in Heterogeneous GaAs/Si 3N 4 Quantum Photonic Circuits. NANO LETTERS 2019; 19:7164-7172. [PMID: 31470692 PMCID: PMC7020556 DOI: 10.1021/acs.nanolett.9b02758] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Silicon photonics enables scaling of quantum photonic systems by allowing the creation of extensive, low-loss, reconfigurable networks linking various functional on-chip elements. Inclusion of single quantum emitters onto photonic circuits, acting as on-demand sources of indistinguishable photons or single-photon nonlinearities, may enable large-scale chip-based quantum photonic circuits and networks. Toward this, we use low-temperature in situ electron-beam lithography to deterministically produce hybrid GaAs/Si3N4 photonic devices containing single InAs quantum dots precisely located inside nanophotonic structures, which act as efficient, Si3N4 waveguide-coupled on-chip, on-demand single-photon sources. The precise positioning afforded by our scalable fabrication method furthermore allows observation of postselected indistinguishable photons. This indicates a promising path toward significant scaling of chip-based quantum photonics, enabled by large fluxes of indistinguishable single-photons produced on-demand, directly on-chip.
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Affiliation(s)
- Peter Schnauber
- Institute of Solid State Physics , Technische Universität Berlin , Berlin 10623 , Germany
| | - Anshuman Singh
- National Institute of Standards and Technology , Gaithersburg , Maryland 20899 , United States
- Maryland NanoCenter , University of Maryland , College Park , Maryland 20899 , United States
| | - Johannes Schall
- Institute of Solid State Physics , Technische Universität Berlin , Berlin 10623 , Germany
| | - Suk In Park
- Center for Optoelectronic Convergence Systems , Korea Institute of Science and Technology , Seoul 02792 South Korea
| | - Jin Dong Song
- Center for Optoelectronic Convergence Systems , Korea Institute of Science and Technology , Seoul 02792 South Korea
| | - Sven Rodt
- Institute of Solid State Physics , Technische Universität Berlin , Berlin 10623 , Germany
| | - Kartik Srinivasan
- National Institute of Standards and Technology , Gaithersburg , Maryland 20899 , United States
- Joint Quantum Institute , NIST/University of Maryland , College Park , Maryland 20899 , United States
| | - Stephan Reitzenstein
- Institute of Solid State Physics , Technische Universität Berlin , Berlin 10623 , Germany
| | - Marcelo Davanco
- National Institute of Standards and Technology , Gaithersburg , Maryland 20899 , United States
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29
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Buyanova IA, Chen WM. Dilute nitrides-based nanowires-a promising platform for nanoscale photonics and energy technology. NANOTECHNOLOGY 2019; 30:292002. [PMID: 30933933 DOI: 10.1088/1361-6528/ab1516] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Dilute nitrides are novel III-V-N semiconductor alloys promising for a great variety of applications ranging from nanoscale light emitters and solar cells to energy production via photoelectrochemical reactions and to nano-spintronics. These alloys have become available in the one-dimensional geometry only most recently, thanks to the advances in the nanowire (NW) growth utilizing molecular beam epitaxy. In this review we will summarize growth approaches currently utilized for the fabrication of such novel dilute nitride-based NWs, discuss their structural, defect-related and optical properties, as well as provide several examples of their potential applications.
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30
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Balaghi L, Bussone G, Grifone R, Hübner R, Grenzer J, Ghorbani-Asl M, Krasheninnikov AV, Schneider H, Helm M, Dimakis E. Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch. Nat Commun 2019; 10:2793. [PMID: 31243278 PMCID: PMC6595053 DOI: 10.1038/s41467-019-10654-7] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2018] [Accepted: 05/20/2019] [Indexed: 11/09/2022] Open
Abstract
The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium arsenide or indium aluminium arsenide shells. Specifically, we demonstrate that the gallium arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips.
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Affiliation(s)
- Leila Balaghi
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062, Dresden, Germany
| | - Genziana Bussone
- PETRA III, Deutsches Elektronen-Synchrotron (DESY), 22607, Hamburg, Germany
| | - Raphael Grifone
- PETRA III, Deutsches Elektronen-Synchrotron (DESY), 22607, Hamburg, Germany
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Jörg Grenzer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Mahdi Ghorbani-Asl
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Harald Schneider
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Manfred Helm
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062, Dresden, Germany
| | - Emmanouil Dimakis
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany.
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31
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Dalacu D, Poole PJ, Williams RL. Nanowire-based sources of non-classical light. NANOTECHNOLOGY 2019; 30:232001. [PMID: 30703755 DOI: 10.1088/1361-6528/ab0393] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Sources of quantum light that utilize photonic nanowire designs have emerged as potential candidates for high efficiency non-classical light generation in quantum information processing. In this review we cover the different platforms used to produce nanowire-based sources, highlighting the importance of waveguide design and material properties in achieving optimal performance. The limitations of the sources are identified and routes to optimization are proposed. State-of-the-art nanowire sources are compared to other solid-state quantum emitter platforms with regard to the key metrics of single photon purity, indistinguishability and entangled-pair fidelity to maximally entangled Bell states. We also discuss the unique ability of the nanowire platform to incorporate multiple emitters in the same optical mode and consider potential applications. Finally, routes to on-chip integration are discussed and the challenges facing the development of a nanowire-based scalable architecture are presented.
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Affiliation(s)
- Dan Dalacu
- National Research Council of Canada, Ottawa, Ontario, K1A 0R6, Canada
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32
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Battiato S, Wu S, Zannier V, Bertoni A, Goldoni G, Li A, Xiao S, Han XD, Beltram F, Sorba L, Xu X, Rossella F. Polychromatic emission in a wide energy range from InP-InAs-InP multi-shell nanowires. NANOTECHNOLOGY 2019; 30:194004. [PMID: 30634180 DOI: 10.1088/1361-6528/aafde4] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
InP-InAs-InP multi-shell nanowires (NWs) were grown in the wurtzite (WZ) or zincblende (ZB) crystal phase and their photoluminescence (PL) properties were investigated at low temperature (≈6 K) for different measurement geometries. PL emissions from the NWs were carefully studied in a wide energy range from 0.7 to 1.6 eV. The different features observed in the PL spectra for increasing energies are attributed to four distinct emitting domains of these nano-heterostructures: the InAs island (axially grown), the thin InAs capping shell (radially grown), the crystal-phase quantum disks arising from the coexistence of InP ZB and WZ segments in the same NW, and the InP portions of the NW. These results provide a useful frame for the rational implementation of InP-InAs-InP multi-shell NWs containing various quantum confined domains as polychromatic optically active components in nanodevices for quantum information and communication technologies.
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Affiliation(s)
- S Battiato
- NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, I-56217 Pisa, Italy
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33
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Güniat L, Caroff P, Fontcuberta I Morral A. Vapor Phase Growth of Semiconductor Nanowires: Key Developments and Open Questions. Chem Rev 2019; 119:8958-8971. [PMID: 30998006 DOI: 10.1021/acs.chemrev.8b00649] [Citation(s) in RCA: 82] [Impact Index Per Article: 16.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/11/2022]
Abstract
Nanowires are filamentary crystals with a tailored diameter that can be obtained using a plethora of different synthesis techniques. In this review, we focus on the vapor phase, highlighting the most influential achievements along with a historical perspective. Starting with the discovery of VLS, we feature the variety of structures and materials that can be synthesized in the nanowire form. We then move on to establish distinct features such as the three-dimensional heterostructure/doping design and polytypism. We summarize the status quo of the growth mechanisms, recently confirmed by in situ electron microscopy experiments and defining common ground between the different synthesis techniques. We then propose a selection of remaining defects, starting from what we know and going toward what is still to be learned. We believe this review will serve as a reference for neophytes but also as an insight for experts in an effort to bring open questions under a new light.
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Affiliation(s)
- Lucas Güniat
- Laboratory of Semiconductor Materials, Institute of Materials , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Philippe Caroff
- Microsoft Quantum Lab Delft , Delft University of Technology , 2600 GA Delft , The Netherlands
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland.,Institute of Physics , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
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34
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Wang H, Hu H, Chung TH, Qin J, Yang X, Li JP, Liu RZ, Zhong HS, He YM, Ding X, Deng YH, Dai Q, Huo YH, Höfling S, Lu CY, Pan JW. On-Demand Semiconductor Source of Entangled Photons Which Simultaneously Has High Fidelity, Efficiency, and Indistinguishability. PHYSICAL REVIEW LETTERS 2019; 122:113602. [PMID: 30951338 DOI: 10.1103/physrevlett.122.113602] [Citation(s) in RCA: 63] [Impact Index Per Article: 12.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2018] [Indexed: 06/09/2023]
Abstract
An outstanding goal in quantum optics and scalable photonic quantum technology is to develop a source that each time emits one and only one entangled photon pair with simultaneously high entanglement fidelity, extraction efficiency, and photon indistinguishability. By coherent two-photon excitation of a single InGaAs quantum dot coupled to a circular Bragg grating bull's-eye cavity with a broadband high Purcell factor of up to 11.3, we generate entangled photon pairs with a state fidelity of 0.90(1), pair generation rate of 0.59(1), pair extraction efficiency of 0.62(6), and photon indistinguishability of 0.90(1) simultaneously. Our work will open up many applications in high-efficiency multiphoton experiments and solid-state quantum repeaters.
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Affiliation(s)
- Hui Wang
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Hai Hu
- Division of Nanophotonics, CAS center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - T-H Chung
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jian Qin
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiaoxia Yang
- Division of Nanophotonics, CAS center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - J-P Li
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - R-Z Liu
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - H-S Zhong
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Y-M He
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xing Ding
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Y-H Deng
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qing Dai
- Division of Nanophotonics, CAS center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
| | - Y-H Huo
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Sven Höfling
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- Technische Physik, Physikalisches Instität and Wilhelm Conrad Röntgen-Center for Complex Material Systems, Universitat Würzburg, Am Hubland, D-97074 Wüzburg, Germany
- SUPA, School of Physics and Astronomy, University of St Andrews, St Andrews KY16 9SS, United Kingdom
| | - Chao-Yang Lu
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jian-Wei Pan
- Shanghai Branch, National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Shanghai 201315, China
- CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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35
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Bonu V, Sahu BK, Das A, Amirthapandian S, Dhara S, Barshilia HC. Sub-wavelength waveguide properties of 1D and surface-functionalized SnO 2 nanostructures of various morphologies. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2019; 10:379-388. [PMID: 30800577 PMCID: PMC6369987 DOI: 10.3762/bjnano.10.37] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/06/2018] [Accepted: 12/10/2018] [Indexed: 06/09/2023]
Abstract
One-dimensional (1D) SnO2 sub-wavelength waveguides are a critical contribution to advanced optoelectronics. Further understanding of the surface defects and role of morphology in 1D SnO2 nanowires can help to better utilize these nanostructures more efficiently. For this purpose, three different nanowires (NWs), namely belts, cylindrical- and square-shaped structures were grown using SnO2 quantum dots as a precursor material. The growth process of these NWs is discussed. The nanobelts were observed to grow up to 3 mm in length. Morphological and structural studies of the nanostructures were also carried out. All NWs showed waveguide behavior with visible photoluminescence (PL) upon excitation with a 325 nm laser. This behavior was also demonstrated in tapered and surface-functionalized SnO2 NWs. While the tapered waveguide can allow for easy focusing of light, the simple surface chemistry offers selective light propagation by tuning the luminescence. Defect-related PL in NWs is studied using temperature-dependent measurements and a band diagram is proposed.
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Affiliation(s)
- Venkataramana Bonu
- Surface and Nanoscience Division, Indira Gandhi Center for Atomic Research, Homi Bhabha National Institute, Kalpakkam 603102, India
- Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560017, India
| | - Binaya Kumar Sahu
- Surface and Nanoscience Division, Indira Gandhi Center for Atomic Research, Homi Bhabha National Institute, Kalpakkam 603102, India
| | - Arindam Das
- Surface and Nanoscience Division, Indira Gandhi Center for Atomic Research, Homi Bhabha National Institute, Kalpakkam 603102, India
| | - Sankarakumar Amirthapandian
- Materials Physics Division, Indira Gandhi Center for Atomic Research, Homi Bhabha National Institute, Kalpakkam 603102, India
| | - Sandip Dhara
- Surface and Nanoscience Division, Indira Gandhi Center for Atomic Research, Homi Bhabha National Institute, Kalpakkam 603102, India
| | - Harish C Barshilia
- Surface Engineering Division, CSIR-National Aerospace Laboratories, Bangalore 560017, India
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36
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Li Y, Zhuang TT, Fan F, Voznyy O, Askerka M, Zhu H, Wu L, Liu GQ, Pan YX, Sargent EH, Yu SH. Pulsed axial epitaxy of colloidal quantum dots in nanowires enables facet-selective passivation. Nat Commun 2018; 9:4947. [PMID: 30470752 PMCID: PMC6251926 DOI: 10.1038/s41467-018-07422-4] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2018] [Accepted: 10/25/2018] [Indexed: 11/08/2022] Open
Abstract
Epitaxially stacking colloidal quantum dots in nanowires offers a route to selective passivation of defective facets while simultaneously enabling charge transfer to molecular adsorbates - features that must be combined to achieve high-efficiency photocatalysts. This requires dynamical switching of precursors to grow, alternatingly, the quantum dots and nanowires - something not readily implemented in conventional flask-based solution chemistry. Here we report pulsed axial epitaxy, a growth mode that enables the stacking of multiple CdS quantum dots in ZnS nanowires. The approach relies on the energy difference of incorporating these semiconductor atoms into the host catalyst, which determines the nucleation sequence at the catalyst-nanowire interface. This flexible synthetic strategy allows precise modulation of quantum dot size, number, spacing, and crystal phase. The facet-selective passivation of quantum dots in nanowires opens a pathway to photocatalyst engineering: we report photocatalysts that exhibit an order-of-magnitude higher photocatalytic hydrogen evolution rates than do plain CdS quantum dots.
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Affiliation(s)
- Yi Li
- Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of CAS, Collaborative Innovation Center of Suzhou Nano Science and Technology, Department of Chemistry, University of Science and Technology of China, Hefei, 230026, China
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, 230031, China
| | - Tao-Tao Zhuang
- Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of CAS, Collaborative Innovation Center of Suzhou Nano Science and Technology, Department of Chemistry, University of Science and Technology of China, Hefei, 230026, China
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario, M5S 1A4, Canada
| | - Fengjia Fan
- CAS Key Laboratory of Microscale Magnetic Resonance and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Oleksandr Voznyy
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario, M5S 1A4, Canada
| | - Mikhail Askerka
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario, M5S 1A4, Canada
| | - Haiming Zhu
- Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang, 310027, China
| | - Liang Wu
- Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of CAS, Collaborative Innovation Center of Suzhou Nano Science and Technology, Department of Chemistry, University of Science and Technology of China, Hefei, 230026, China
| | - Guo-Qiang Liu
- Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of CAS, Collaborative Innovation Center of Suzhou Nano Science and Technology, Department of Chemistry, University of Science and Technology of China, Hefei, 230026, China
| | - Yun-Xiang Pan
- School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei, Anhui, 230009, China
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario, M5S 1A4, Canada.
| | - Shu-Hong Yu
- Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, CAS Center for Excellence in Nanoscience, Hefei Science Center of CAS, Collaborative Innovation Center of Suzhou Nano Science and Technology, Department of Chemistry, University of Science and Technology of China, Hefei, 230026, China.
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, 230031, China.
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37
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Leandro L, Gunnarsson CP, Reznik R, Jöns KD, Shtrom I, Khrebtov A, Kasama T, Zwiller V, Cirlin G, Akopian N. Nanowire Quantum Dots Tuned to Atomic Resonances. NANO LETTERS 2018; 18:7217-7221. [PMID: 30336054 DOI: 10.1021/acs.nanolett.8b03363] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Quantum dots tuned to atomic resonances represent an emerging field of hybrid quantum systems where the advantages of quantum dots and natural atoms can be combined. Embedding quantum dots in nanowires boosts these systems with a set of powerful possibilities, such as precise positioning of the emitters, excellent photon extraction efficiency and direct electrical contacting of quantum dots. Notably, nanowire structures can be grown on silicon substrates, allowing for a straightforward integration with silicon-based photonic devices. In this work we show controlled growth of nanowire-quantum-dot structures on silicon, frequency tuned to atomic transitions. We grow GaAs quantum dots in AlGaAs nanowires with a nearly pure crystal structure and excellent optical properties. We precisely control the dimensions of quantum dots and their position inside nanowires and demonstrate that the emission wavelength can be engineered over the range of at least 30 nm around 765 nm. By applying an external magnetic field, we are able to fine-tune the emission frequency of our nanowire quantum dots to the D2 transition of 87Rb. We use the Rb transitions to precisely measure the actual spectral line width of the photons emitted from a nanowire quantum dot to be 9.4 ± 0.7 μeV, under nonresonant excitation. Our work brings highly desirable functionalities to quantum technologies, enabling, for instance, a realization of a quantum network, based on an arbitrary number of nanowire single-photon sources, all operating at the same frequency of an atomic transition.
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Affiliation(s)
- Lorenzo Leandro
- DTU Department of Photonics Engineering , Technical University of Denmark , 2800 Kgs. Lyngby , Denmark
| | - Christine P Gunnarsson
- DTU Department of Photonics Engineering , Technical University of Denmark , 2800 Kgs. Lyngby , Denmark
| | - Rodion Reznik
- St. Petersburg Academic University , RAS , St. Petersburg 194021 , Russia
- ITMO University , Kronverkskiy pr. 49 , 197101 St. Petersburg , Russia
| | - Klaus D Jöns
- Department of Applied Physics , KTH Royal Institute of Technology , SE-100 44 Stockholm , Sweden
| | - Igor Shtrom
- St. Petersburg Academic University , RAS , St. Petersburg 194021 , Russia
| | - Artem Khrebtov
- ITMO University , Kronverkskiy pr. 49 , 197101 St. Petersburg , Russia
| | - Takeshi Kasama
- DTU Department of Photonics Engineering , Technical University of Denmark , 2800 Kgs. Lyngby , Denmark
| | - Valery Zwiller
- Department of Applied Physics , KTH Royal Institute of Technology , SE-100 44 Stockholm , Sweden
- Kavli Institute of Nanoscience , TU Delft , 2628CJ Delft , Netherlands
| | - George Cirlin
- St. Petersburg Academic University , RAS , St. Petersburg 194021 , Russia
- ITMO University , Kronverkskiy pr. 49 , 197101 St. Petersburg , Russia
| | - Nika Akopian
- DTU Department of Photonics Engineering , Technical University of Denmark , 2800 Kgs. Lyngby , Denmark
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38
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Cheng MT, Xia X, Xu J, Zhu C, Wang B, Ma XS. Single photon polarization conversion via scattering by a pair of atoms. OPTICS EXPRESS 2018; 26:28872-28878. [PMID: 30470057 DOI: 10.1364/oe.26.028872] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2018] [Accepted: 09/26/2018] [Indexed: 06/09/2023]
Abstract
The single photon scattering in one-dimensional waveguide coupled to two separated atoms is investigated. The first atom is considered as a Λ system and the second one is taken as V -type configuration. The analytical expressions of the single photon scattering spectra are obtained. The calculated results show that the polarization conversion of single photon can be realized by controlling the distance between the two atoms due to the interference effects. The conversion efficiency can reach unit in the ideal case. Furthermore, the polarization conversion of the single photon also depends on the initial state of the Λ system. The influences of dissipations on the single photon polarization conversion are also shown.
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39
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Halder NN, Kelrich A, Cohen S, Ritter D. Controlled axial and radial growth of InP nanowires by metal-organic molecular beam epitaxy using the selective-area vapor-liquid-solid approach. NANOTECHNOLOGY 2018; 29:415602. [PMID: 30040074 DOI: 10.1088/1361-6528/aad584] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Controlling the transition from axial to radial growth is essential for advanced III-V nanowire (NW) technology. Growth temperature and precursor flux affect this transition in a complicated manner. Here, we report on experiments designed to map the axial to radial growth transition of InP NWs prepared by the selective-area vapor-liquid-solid method during metal-organic molecular beam epitaxy. An optimized growth procedure for axial to radial switching was obtained, maintaining the pure wurtzite crystal phase of the NWs.
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Affiliation(s)
- Nripendra N Halder
- Electrical Engineering Faculty, Technion Israel Institute of Technology, Haifa 32000, Israel
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40
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Fons R, Osterkryger AD, Stepanov P, Gautier E, Bleuse J, Gérard JM, Gregersen N, Claudon J. All-Optical Mapping of the Position of Quantum Dots Embedded in a Nanowire Antenna. NANO LETTERS 2018; 18:6434-6440. [PMID: 30185050 DOI: 10.1021/acs.nanolett.8b02826] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Nanowire antennas embedding single quantum dots (QDs) have recently emerged as a versatile solid-state platform for quantum optics. Within the nanowire section, the emitter position simultaneously determines the strength of the light-matter interaction, as well as the coupling to potential decoherence channels. Therefore, to quantitatively understand device performance and guide future optimization, it is highly desirable to map the emitter position with an accuracy much smaller than the waveguide diameter, on the order of a few hundreds of nanometers. We introduce here a nondestructive, all-optical mapping technique that exploits the QD emission into two guided modes with different transverse profiles. These two modes are fed by the same emitter and thus interfere. The resulting intensity pattern, which is highly sensitive to the emitter position, is resolved in the far-field using Fourier microscopy. We demonstrate this technique on a standard microphotoluminescence setup and map the position of individual QDs in a nanowire antenna with a spatial resolution of ±10 nm. This work opens important perspectives for the future development of light-matter interfaces based on nanowire antennas. Beyond single-QD devices, it will also provide a valuable tool for the investigation of collective effects that imply several emitters coupled to an optical waveguide.
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Affiliation(s)
- Romain Fons
- Univ. Grenoble Alpes, CEA, INAC, PHELIQS , "Nanophysique et semiconducteurs" group, F-38000 Grenoble , France
| | - Andreas D Osterkryger
- DTU Fotonik, Department of Photonics Engineering , Technical University of Denmark , Ørsteds Plads Building 343 , DK-2800 Kongens Lyngby , Denmark
| | - Petr Stepanov
- Univ. Grenoble Alpes, CEA, INAC, PHELIQS , "Nanophysique et semiconducteurs" group, F-38000 Grenoble , France
| | - Eric Gautier
- Univ. Grenoble Alpes, CEA, CNRS, INAC, SPINTEC , F-38000 Grenoble , France
| | - Joël Bleuse
- Univ. Grenoble Alpes, CEA, INAC, PHELIQS , "Nanophysique et semiconducteurs" group, F-38000 Grenoble , France
| | - Jean-Michel Gérard
- Univ. Grenoble Alpes, CEA, INAC, PHELIQS , "Nanophysique et semiconducteurs" group, F-38000 Grenoble , France
| | - Niels Gregersen
- DTU Fotonik, Department of Photonics Engineering , Technical University of Denmark , Ørsteds Plads Building 343 , DK-2800 Kongens Lyngby , Denmark
| | - Julien Claudon
- Univ. Grenoble Alpes, CEA, INAC, PHELIQS , "Nanophysique et semiconducteurs" group, F-38000 Grenoble , France
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41
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Fognini A, Ahmadi A, Daley SJ, Reimer ME, Zwiller V. Universal fine-structure eraser for quantum dots. OPTICS EXPRESS 2018; 26:24487-24496. [PMID: 30469565 DOI: 10.1364/oe.26.024487] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2018] [Accepted: 08/13/2018] [Indexed: 06/09/2023]
Abstract
We analyze the degree of entanglement measurable from a quantum dot via the biexciton-exciton cascade as a function of the exciton fine-structure splitting and the detection time resolution. We show that the time-energy uncertainty relation provides means to measure a high entanglement even in presence of a finite fine-structure splitting when a detection system with high temporal resolution is employed. Still, in many applications it would be beneficial if the fine-structure splitting could be compensated to zero. To solve this problem, we propose an all-optical approach with rotating waveplates to erase this fine-structure splitting completely which should allow obtaining a high degree of entanglement with near-unity efficiency. Our optical approach is possible with current technology and is also compatible with any quantum dot showing fine-structure splitting. This bears the advantage that for example the fine-structure splitting of quantum dots in nanowires and micropillars can be directly compensated without the need for further sample processing.
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42
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Highly-efficient extraction of entangled photons from quantum dots using a broadband optical antenna. Nat Commun 2018; 9:2994. [PMID: 30065263 PMCID: PMC6068148 DOI: 10.1038/s41467-018-05456-2] [Citation(s) in RCA: 42] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/06/2018] [Accepted: 07/01/2018] [Indexed: 12/02/2022] Open
Abstract
Many quantum photonic technologies require the efficient generation of entangled pairs of photons, but to date there have been few ways to produce them reliably. Sources based on parametric down conversion operate at very low efficiency per pulse due to the probabilistic generation process. Semiconductor quantum dots can emit single pairs of entangled photons deterministically but they fall short due to the extremely low-extraction efficiency. Strategies for extracting single photons from quantum dots, such as embedding them in narrowband optical cavities, are difficult to translate to entangled photons. Here, we build a broadband optical antenna with an extraction efficiency of 65% ± 4% and demonstrate a highly-efficient entangled-photon source by collecting strongly entangled photons (fidelity of 0.9) at a pair efficiency of 0.372 ± 0.002 per pulse. The high brightness achieved by our source represents a step forward in the development of optical quantum technologies. Cascade radiative decay in quantum dots is a promising way of generating entangled photon pairs, but the extraction efficiency is a strongly limiting factor. Here, the authors demonstrate high extraction efficiency through a broadband dielectric photonic antenna.
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43
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Huber D, Reindl M, Covre da Silva SF, Schimpf C, Martín-Sánchez J, Huang H, Piredda G, Edlinger J, Rastelli A, Trotta R. Strain-Tunable GaAs Quantum Dot: A Nearly Dephasing-Free Source of Entangled Photon Pairs on Demand. PHYSICAL REVIEW LETTERS 2018; 121:033902. [PMID: 30085806 DOI: 10.1103/physrevlett.121.033902] [Citation(s) in RCA: 50] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2018] [Indexed: 05/28/2023]
Abstract
We report on the observation of nearly maximally entangled photon pairs from semiconductor quantum dots, without resorting to postselection techniques. We use GaAs quantum dots integrated on a patterned piezoelectric actuator capable of suppressing the exciton fine structure splitting. By using a resonant two-photon excitation, we coherently drive the biexciton state and demonstrate experimentally that our device generates polarization-entangled photons with a fidelity of 0.978(5) and a concurrence of 0.97(1) taking into account the nonidealities stemming from the experimental setup. By combining fine-structure-dependent fidelity measurements and a theoretical model, we identify an exciton spin-scattering process as a possible residual decoherence mechanism. We suggest that this imperfection may be overcome using a modest Purcell enhancement so as to achieve fidelities >0.99, thus making quantum dots evenly matched with the best probabilistic entangled photon sources.
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Affiliation(s)
- Daniel Huber
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Altenbergerstraße 69, 4040, Austria
| | - Marcus Reindl
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Altenbergerstraße 69, 4040, Austria
| | - Saimon Filipe Covre da Silva
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Altenbergerstraße 69, 4040, Austria
| | - Christian Schimpf
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Altenbergerstraße 69, 4040, Austria
| | - Javier Martín-Sánchez
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Altenbergerstraße 69, 4040, Austria
- Department of Physics, University of Oviedo, 33007 Oviedo, Spain
| | - Huiying Huang
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Altenbergerstraße 69, 4040, Austria
| | - Giovanni Piredda
- Forschungszentrum Mikrotechnik, FH Vorarlberg, Hochschulstraße 1, A-6850 Dornbirn, Austria
| | - Johannes Edlinger
- Forschungszentrum Mikrotechnik, FH Vorarlberg, Hochschulstraße 1, A-6850 Dornbirn, Austria
| | - Armando Rastelli
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Altenbergerstraße 69, 4040, Austria
| | - Rinaldo Trotta
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Altenbergerstraße 69, 4040, Austria
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Rome, Italy
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44
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Haffouz S, Zeuner KD, Dalacu D, Poole PJ, Lapointe J, Poitras D, Mnaymneh K, Wu X, Couillard M, Korkusinski M, Schöll E, Jöns KD, Zwiller V, Williams RL. Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide. NANO LETTERS 2018; 18:3047-3052. [PMID: 29616557 DOI: 10.1021/acs.nanolett.8b00550] [Citation(s) in RCA: 42] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in the count rate by nearly 2 orders of magnitude (0.4 to 35 kcps) is obtained for quantum dots emitting in the telecom O-band, showing high single-photon purity with multiphoton emission probabilities down to 2%. Using emission-wavelength-optimized waveguides, we demonstrate bright, narrow-line-width emission from single InAsP quantum dots with an unprecedented tuning range of 880 to 1550 nm. These results pave the way toward efficient single-photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.
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Affiliation(s)
- Sofiane Haffouz
- National Research Council of Canada , Ottawa , Ontario , Canada , K1A 0R6
| | | | - Dan Dalacu
- National Research Council of Canada , Ottawa , Ontario , Canada , K1A 0R6
| | - Philip J Poole
- National Research Council of Canada , Ottawa , Ontario , Canada , K1A 0R6
| | - Jean Lapointe
- National Research Council of Canada , Ottawa , Ontario , Canada , K1A 0R6
| | - Daniel Poitras
- National Research Council of Canada , Ottawa , Ontario , Canada , K1A 0R6
| | - Khaled Mnaymneh
- National Research Council of Canada , Ottawa , Ontario , Canada , K1A 0R6
| | - Xiaohua Wu
- National Research Council of Canada , Ottawa , Ontario , Canada , K1A 0R6
| | - Martin Couillard
- National Research Council of Canada , Ottawa , Ontario , Canada , K1A 0R6
| | - Marek Korkusinski
- National Research Council of Canada , Ottawa , Ontario , Canada , K1A 0R6
| | - Eva Schöll
- KTH Royal Institute of Technology , Stockholm , 100 44 Sweden
| | - Klaus D Jöns
- KTH Royal Institute of Technology , Stockholm , 100 44 Sweden
| | - Valery Zwiller
- KTH Royal Institute of Technology , Stockholm , 100 44 Sweden
| | - Robin L Williams
- National Research Council of Canada , Ottawa , Ontario , Canada , K1A 0R6
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45
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Pozina G, Gubaydullin AR, Mitrofanov MI, Kaliteevski MA, Levitskii IV, Voznyuk GV, Tatarinov EE, Evtikhiev VP, Rodin SN, Kaliteevskiy VN, Chechurin LS. Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy. Sci Rep 2018; 8:7218. [PMID: 29740066 PMCID: PMC5940688 DOI: 10.1038/s41598-018-25647-7] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/20/2017] [Accepted: 04/25/2018] [Indexed: 12/02/2022] Open
Abstract
We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on a sapphire substrate, etching of the trenches in the mask by FIB with a diameter of 40 nm with subsequent MOVPE growth of GaN within trenches. It was observed that the growth rate of GaN is substantially increased due to enhanced bulk diffusion of the growth precursor therefore the model for analysis of the growth rate was developed. The GaN strips fabricated by this method demonstrate effective luminescence properties. The structures demonstrate enhancement of spontaneous emission via formation of Fabry-Perot modes.
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Affiliation(s)
- Galia Pozina
- Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83, Linköping, Sweden.
| | - Azat R Gubaydullin
- St-Petersburg Academic University Khlopina 8/3, 194021, St. Petersburg, Russian Federation.,ITMO University, Kronverkskiy pr. 49, 197101, St. Petersburg, Russian Federation
| | - Maxim I Mitrofanov
- Ioffe Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russian Federation.,SHM R&E Center RAS, 194021, St. Petersburg, Russian Federation
| | - Mikhail A Kaliteevski
- St-Petersburg Academic University Khlopina 8/3, 194021, St. Petersburg, Russian Federation.,ITMO University, Kronverkskiy pr. 49, 197101, St. Petersburg, Russian Federation.,Ioffe Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russian Federation
| | - Iaroslav V Levitskii
- Ioffe Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russian Federation.,SHM R&E Center RAS, 194021, St. Petersburg, Russian Federation
| | - Gleb V Voznyuk
- ITMO University, Kronverkskiy pr. 49, 197101, St. Petersburg, Russian Federation
| | - Evgeniy E Tatarinov
- ITMO University, Kronverkskiy pr. 49, 197101, St. Petersburg, Russian Federation
| | - Vadim P Evtikhiev
- Ioffe Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russian Federation
| | - Sergey N Rodin
- Ioffe Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russian Federation.,SHM R&E Center RAS, 194021, St. Petersburg, Russian Federation
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46
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Basso Basset F, Bietti S, Reindl M, Esposito L, Fedorov A, Huber D, Rastelli A, Bonera E, Trotta R, Sanguinetti S. High-Yield Fabrication of Entangled Photon Emitters for Hybrid Quantum Networking Using High-Temperature Droplet Epitaxy. NANO LETTERS 2018; 18:505-512. [PMID: 29239186 DOI: 10.1021/acs.nanolett.7b04472] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Several semiconductor quantum dot techniques have been investigated for the generation of entangled photon pairs. Among the other techniques, droplet epitaxy enables the control of the shape, size, density, and emission wavelength of the quantum emitters. However, the fraction of the entanglement-ready quantum dots that can be fabricated with this method is still limited to around 5%, and matching the energy of the entangled photons to atomic transitions (a promising route toward quantum networking) remains an outstanding challenge. Here, we overcome these obstacles by introducing a modified approach to droplet epitaxy on a high symmetry (111)A substrate, where the fundamental crystallization step is performed at a significantly higher temperature as compared with previous reports. Our method drastically improves the yield of entanglement-ready photon sources near the emission wavelength of interest, which can be as high as 95% due to the low values of fine structure splitting and radiative lifetime, together with the reduced exciton dephasing offered by the choice of GaAs/AlGaAs materials. The quantum dots are designed to emit in the operating spectral region of Rb-based slow-light media, providing a viable technology for quantum repeater stations.
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Affiliation(s)
- Francesco Basso Basset
- L-NESS and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca , Via Cozzi 55, I-20125 Milano, Italy
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University , Altenbergerstraße 69, Linz 4040, Austria
| | - Sergio Bietti
- L-NESS and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca , Via Cozzi 55, I-20125 Milano, Italy
| | - Marcus Reindl
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University , Altenbergerstraße 69, Linz 4040, Austria
| | - Luca Esposito
- L-NESS and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca , Via Cozzi 55, I-20125 Milano, Italy
| | | | - Daniel Huber
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University , Altenbergerstraße 69, Linz 4040, Austria
| | - Armando Rastelli
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University , Altenbergerstraße 69, Linz 4040, Austria
| | - Emiliano Bonera
- L-NESS and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca , Via Cozzi 55, I-20125 Milano, Italy
| | - Rinaldo Trotta
- Institute of Semiconductor and Solid State Physics, Johannes Kepler University , Altenbergerstraße 69, Linz 4040, Austria
| | - Stefano Sanguinetti
- L-NESS and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca , Via Cozzi 55, I-20125 Milano, Italy
- L-NESS and CNR-IFN , via Anzani 42, I-22100 Como, Italy
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47
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Yu Y, Wang J, Wei YM, Zhou ZK, Ni HQ, Niu ZC, Wang XH, Yu SY. Precise characterization of self-catalyzed III-V nanowire heterostructures via optical second harmonic generation. NANOTECHNOLOGY 2017; 28:395701. [PMID: 28682302 DOI: 10.1088/1361-6528/aa7e17] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
We demonstrate the utility of optical second harmonic generation (SHG) polarimetry to perform structural characterization of self-assembled zinc-blende/wurtzite III-V nanowire heterostructures. By analyzing four anisotropic SHG polarimetric patterns, we distinguish between wurtzite (WZ), zinc-blende (ZB) and ZB/WZ mixing III-V semiconducting crystal structures in nanowire systems. By neglecting the surface contributions and treating the bulk crystal within the quasi-static approximation, we can well explain the optical SHG polarimetry from the NWs with diameter from 200-600 nm. We show that the optical in-coupling and out-coupling coefficients arising from depolarization field can determine the polarization of the SHG. We also demonstrate micro-photoluminescence of GaAs quantum dots in related ZB and ZB/WZ mixing sections of core-shell NW structure, in agreement with the SHG polarimetry results. The ability to perform in situ SHG-based crystallographic study of semiconducting single and multi-crystalline nanowire heterostructures will be useful in displaying structure-property relationships of nanodevices.
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Affiliation(s)
- Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, People's Republic of China
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On-chip single photon filtering and multiplexing in hybrid quantum photonic circuits. Nat Commun 2017; 8:379. [PMID: 28855499 PMCID: PMC5577278 DOI: 10.1038/s41467-017-00486-8] [Citation(s) in RCA: 43] [Impact Index Per Article: 6.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2017] [Accepted: 07/03/2017] [Indexed: 12/24/2022] Open
Abstract
Quantum light plays a pivotal role in modern science and future photonic applications. Since the advent of integrated quantum nanophotonics different material platforms based on III–V nanostructures-, colour centers-, and nonlinear waveguides as on-chip light sources have been investigated. Each platform has unique advantages and limitations; however, all implementations face major challenges with filtering of individual quantum states, scalable integration, deterministic multiplexing of selected quantum emitters, and on-chip excitation suppression. Here we overcome all of these challenges with a hybrid and scalable approach, where single III–V quantum emitters are positioned and deterministically integrated in a complementary metal–oxide–semiconductor-compatible photonic circuit. We demonstrate reconfigurable on-chip single-photon filtering and wavelength division multiplexing with a foot print one million times smaller than similar table-top approaches, while offering excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm. Our work marks an important step to harvest quantum optical technologies’ full potential. Combining different integration platforms on the same chip is currently one of the main challenges for quantum technologies. Here, Elshaari et al. show III-V Quantum Dots embedded in nanowires operating in a CMOS compatible circuit, with controlled on-chip filtering and tunable routing.
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Yin C, Chen L, Song N, Lv Y, Hu F, Sun C, Yu WW, Zhang C, Wang X, Zhang Y, Xiao M. Bright-Exciton Fine-Structure Splittings in Single Perovskite Nanocrystals. PHYSICAL REVIEW LETTERS 2017; 119:026401. [PMID: 28753331 DOI: 10.1103/physrevlett.119.026401] [Citation(s) in RCA: 84] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2017] [Indexed: 05/22/2023]
Abstract
Here we show that, in single perovskite CsPbI_{3} nanocrystals synthesized from a colloidal approach, a bright-exciton fine-structure splitting as large as hundreds of μeV can be resolved with two orthogonally and linearly polarized photoluminescence peaks. This doublet could switch to a single peak when a single CsPbI_{3} nanocrystal is photocharged to eliminate the electron-hole exchange interaction. The above findings have prepared an efficient platform suitable for probing exciton and spin dynamics of semiconductor nanostructures at the visible-wavelength range, from which a variety of practical applications such as in entangled photon-pair source and quantum information processing can be envisioned.
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Affiliation(s)
- Chunyang Yin
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Liyang Chen
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Nan Song
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yan Lv
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Fengrui Hu
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Chun Sun
- State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - William W Yu
- State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Chunfeng Zhang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yu Zhang
- State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Min Xiao
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
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Orieux A, Versteegh MAM, Jöns KD, Ducci S. Semiconductor devices for entangled photon pair generation: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2017; 80:076001. [PMID: 28346219 DOI: 10.1088/1361-6633/aa6955] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Entanglement is one of the most fascinating properties of quantum mechanical systems; when two particles are entangled the measurement of the properties of one of the two allows the properties of the other to be instantaneously known, whatever the distance separating them. In parallel with fundamental research on the foundations of quantum mechanics performed on complex experimental set-ups, we assist today with bourgeoning of quantum information technologies bound to exploit entanglement for a large variety of applications such as secure communications, metrology and computation. Among the different physical systems under investigation, those involving photonic components are likely to play a central role and in this context semiconductor materials exhibit a huge potential in terms of integration of several quantum components in miniature chips. In this article we review the recent progress in the development of semiconductor devices emitting entangled photons. We will present the physical processes allowing the generation of entanglement and the tools to characterize it; we will give an overview of major recent results of the last few years and highlight perspectives for future developments.
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Affiliation(s)
- Adeline Orieux
- Sorbonne Universités, UPMC Univ Paris 06, CNRS, Laboratoire d'Informatique de Paris 6 (LIP6), 4 Place Jussieu, 75005 Paris, France. IRIF UMR 8243, Université Paris Diderot, Sorbonne Paris Cité, CNRS, 75013 Paris, France
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