Regular arrays of highly ordered ferroelectric polymer nanostructures for non-volatile low-voltage memories

The past 10 years of molecular ferroelectrics: structures, design, and properties

Ferroelectricity, which has diverse important applications such as memory elements, capacitors, and sensors, was first discovered in a molecular compound, Rochelle salt, in 1920 by Valasek. Owing to their superiorities of lightweight, biocompatibility, structural tunability, mechanical flexibility, etc., the past decade has witnessed the renaissance of molecular ferroelectrics as promising complementary materials to commercial inorganic ferroelectrics. Thus, on the 100th anniversary of ferroelectricity, it is an opportune time to look into the future, specifically into how to push the boundaries of material design in molecular ferroelectric systems and finally overcome the hurdles to their commercialization. Herein, we present a comprehensive and accessible review of the appealing development of molecular ferroelectrics over the past 10 years, with an emphasis on their structural diversity, chemical design, exceptional properties, and potential applications. We believe that it will inspire intense, combined research efforts to enrich the family of high-performance molecular ferroelectrics and attract widespread interest from physicists and chemists to better understand the structure-function relationships governing improved applied functional device engineering.

Introducing Photo-Cross-Linkable Functionalities on P(VDF-co-TrFE) Ferroelectric Copolymer

Ferroelectric polymers have emerged as crucial materials for the development of advanced organic electronic devices. Their recent high-end commercial applications as fingerprint sensors have only increased the amount of scientific interest around them. Despite an ever-larger body of studies focusing on optimizing the properties of ferroelectric polymers by physical means (e. g., annealing, stretching, blending or nano-structuring), post-polymerization chemical modification of such polymers has only recently become a field of active study with great promise in expanding the scope of those polymers. In this work, a solution-based post-polymerization modification method was developed for the safe and facile grafting of a plethora of functional groups to the backbone of commercially available Poly(vinylidene fluoride-co-trifluoroethylene P(VDF-co-TrFE) ferroelectric polymers. To showcase the versatility of this approach, photosensitive groups were grafted onto the polymeric backbone, enabling them to undergo photo-cross-linking. Finally, these modified polymers were used as functional negative photoresists in a photolithographic process, highlighting the potential of this method to integrate ferroelectric fluorinated electroactive polymers into standard electronic microfabrication production lines.

Optoelectronic conversion and polarization hysteresis in organic MISM and MISIM devices with DA-type single-component molecules

Organic electronic devices offer various advantages, such as low cost and tunability. However, the organic semiconductors used in these devices have significant drawbacks, including instability in air and low carrier mobility. To address these challenges, we recently introduced organic MISM and MISIM (M = metal, I = insulator, S = semiconductor) devices, which effectively generate photo-induced displacement current and exhibit ferroelectric behavior. In previous studies, the S layer consisted of an organic donor-acceptor (DA) bilayer. In the present research, we fabricated MISM and MISIM devices using DA-type single-component molecules as the S layer and examined their photocurrent and polarization hysteresis. While the performance of these devices does not surpass that of DA bilayer devices, we discovered that DA-type single-component molecules can be utilized for photoelectric conversion and polarization trapping.

Large Enhancement of Polarization in a Layered Hybrid Perovskite Ferroelectric Semiconductor via Molecular Engineering

Switchable spontaneous polarization is the vital property of ferroelectrics, which leads to other key physical properties such as piezoelectricity, pyroelectricity, and nonlinear optical effects, etc. Recently, organic-inorganic hybrid perovskites with 2D layered structure have become an emerging branch of ferroelectric materials. However, most of the 2D hybrid ferroelectrics own relatively low polarizations (<15 µC cm-2 ). Here, a strategy to enhance the polarization of these hybrid perovskites by using ortho-, meta-, para-halogen substitution is developed. Based on (benzylammonium)2 PbCl4 (BZACL), the para-chlorine substituted (4-chlorobenzylammonium)2 PbCl4 (4-CBZACL) ferroelectric semiconductor shows a large spontaneous polarization (23.3 µC cm-2 ), which is 79% larger than the polarization of BZACL. This large enhancement of polarization is successfully explained via ab initio calculations. The study provides a convenient and efficient strategy to promote the ferroelectric property in the hybrid perovskite family.

Engineering piezoelectricity at vdW interfaces of quasi-1D chains in 2D Tellurene

Low-dimensional piezoelectrics have drawn attention to the realization in nano-scale devices with high integration density. A unique branch of 2D Tellurene bilayers formed of weakly interacting quasi-1D chains via van der Waals forces is found to exhibit piezoelectricity due to the semiconducting band gap and spatial inversion asymmetry. Various bilayer stackings are systematically examined using density functional theory, revealing optimal piezoelectricity when dipole arrangements are identical in each layer. Negative piezoelectricity has been observed in two of the stackings AA' and AA″ while other two stackings exhibit the usual positive piezoelectric effect. The layer-dependent 2D piezoelectricity (∣e222D ∣) increases with an increasing number of layers in contrast to the odd-even effect observed in h-BN and MoS2. Notably, the piezoelectric effect is observed in even-layered structures due to the homogeneous stacking in multilayers. Strain is found to enhance in-plane piezoelectricity by 4.5 times (-66.25 × 10-10C m-1at -5.1% strain) due to the increasing difference in Born effective charges of positively and negatively charged Te-atoms under compressive biaxial strains. Moreover, out-of-plane piezoelectricity is induced by applying an external electric field, thus implying Tellurene is a promising candidate for piezoelectric sensors.

Switchable tribology of ferroelectrics

Switchable tribological properties of ferroelectrics offer an alternative route to visualize and control ferroelectric domains. Here, we observe the switchable friction and wear behavior of ferroelectrics using a nanoscale scanning probe-down domains have lower friction coefficients and show slower wear rates than up domains and can be used as smart masks. This asymmetry is enabled by flexoelectrically coupled polarization in the up and down domains under a sufficiently high contact force. Moreover, we determine that this polarization-sensitive tribological asymmetry is widely applicable across various ferroelectrics with different chemical compositions and crystalline symmetry. Finally, using this switchable tribology and multi-pass patterning with a domain-based dynamic smart mask, we demonstrate three-dimensional nanostructuring exploiting the asymmetric wear rates of up and down domains, which can, furthermore, be scaled up to technologically relevant (mm-cm) size. These findings demonstrate that ferroelectrics are electrically tunable tribological materials at the nanoscale for versatile applications.

Electron-beam writing of a relaxor ferroelectric polymer for multiplexing information storage and encryption

To meet the strong demand for high-level encryption security, several efforts have been focused on developing new encryption techniques with high density and data security. Herein we employed a template-free electron beam lithography (EBL) technique to write various nanopatterns on poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CTFE)) films and applied it to electron-beam/electric multiplexing memory. Furthermore, electron beams can arbitrarily tailor down the domain structure evolutions and dipole directions, as proved by a combination of AFM-IR and PFM. Finally, our devices could function concurrently as an electron-beam write-only-memory (EB-WOM) and FeRAM, where the information could be encoded with the metastable phase evolutions from the ferroelectric phase to the paraelectric phase and variable bi-level ferroelectric signals. Our systematic study provides an inspiring idea for the design of information encryption devices with high-security requirements in flexible electronic fields.

Enhanced Proliferation and Differentiation of Human Osteoblasts by Remotely Controlled Magnetic-Field-Induced Electric Stimulation Using Flexible Substrates

With the progressive aging of the population, bone fractures are an increasing major health concern. Diverse strategies are being studied to reduce the recovery times using nonaggressive treatments. Electrical stimulation (either endogenous or externally applied electric pulses) has been found to be effective in accelerating bone cell proliferation and differentiation. However, the direct insertion of electrodes into tissues can cause undesirable inflammation or infection reactions. As an alternative, magnetoelectric heterostructures (wherein magnetic fields are applied to induce electric polarization) could be used to achieve electric stimulation without the need for implanted electrodes. Here, we develop a magnetoelectric platform based on flexible kapton/FeGa/P(VDF-TrFE) (flexible substrate/magnetostrictive layer/ferroelectric layer) heterostructures for remote magnetic-field-induced electric field stimulation of human osteoblast cells. We show that the use of flexible supports overcomes the clamping effects that typically occur when analogous magnetoelectric structures are grown onto rigid substrates (which preclude strain transfer from the magnetostrictive to the ferroelectric layers). The study of the diverse proliferation and differentiation markers evidence that in all the stages of bone formation (cell proliferation, extracellular matrix maturation, and mineralization), the electrical stimulation of the cells results in a remarkably better performance. The results pave the way for novel strategies for remote cell stimulation based on flexible platforms not only in bone regeneration but also in many other applications where electrical cell stimulation may be beneficial (e.g., neurological diseases or skin regeneration).

New Insight into Nanoscale Identification of the Polar Axis Direction in Organic Ferroelectric Films

Ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-co-TrFE)] thin films have been deposited by spin-coating onto the Bi0.5Na0.5TiO3(BNT)/LNO/SiO2/Si heterostructure. The copolymer microstructure investigated by using grazing-incidence wide-angle X-ray diffraction (GIWAXD) and deduced from the (200)/(110) reflections demonstrates that the b-axis in the P(VDF-co-TrFE) orthorhombic unit cell is either in the plane or out of the plane, depending on the face-on or on the two types of edge-on (called I and II) lamellar structures locally identified by atomic force microscopy (AFM). For edge-on I lamellae regions, the electroactivity (dzzeff ∼ -50.3 pm/V) is found to be twice as high as that measured for both edge-on II or face-on crystalline domains, as probed by piezoresponse force microscopy (PFM). This result is directly correlated to the direction of the ferroelectric polarization vector in the P(VDF-co-TrFE) orthorhombic cell: larger nanoscale piezoactivity is related to the b-axis which lies along the normal to the substrate plane in the case of the edge-on I domains. Here, the ability to thoroughly gain access to the as-grown polar axis direction within the edge-on crystal lamellae of the ferroelectric organic layers is evidenced by combining the nanometric resolution of the PFM technique with a statistical approach based on its spectroscopic tool. By the gathering of information at the nanoscale, two orientations for the polar b-axis are identified in edge-on lamellar structures. These findings contribute to a better understanding of the structure-property relationships in P(VDF-co-TrFE) films, which is a key issue for the design of future advanced organic electronic devices.

Ferroelectricity in Epitaxial Perovskite Oxide Bi2WO6 Films with One-Unit-Cell Thickness

Retaining ferroelectricity in ultrathin films or nanostructures is crucial for miniaturizing ferroelectric devices, but it is a challenging task due to intrinsic depolarization and size effects. In this study, we have shown that it is possible to stably maintain in-plane polarization in an extremely thin, one-unit-cell thick epitaxial Bi2WO6 film. The use of a perfectly lattice-matched NdGaO3 (110) substrate for the Bi2WO6 film minimizes strain and enhances stability. We attribute the residual polarization in this ultrathin film to the crystal stability of the Bi-O octahedral framework against structural distortions. Our findings suggest that ferroelectricity can surpass the critical thickness limit through proper strain engineering, and the Bi2WO6/NdGaO3 (110) system presents a potential platform for designing low-energy consumption, nonvolatile ferroelectric memories.

Interface-Tuning of Ferroelectricity and Quadruple-Well State in CuInP2S6 via Ferroelectric Oxide

Ferroelectric van der Waals CuInP2S6 possesses intriguing quadruple-well states and negative piezoelectricity. Its technological implementation has been impeded by the relatively low Curie temperature (bulk TC ∼ 42 °C) and the lack of precise domain control. Here we show that CuInP2S6 can be immune to the finite size effect and exhibits enhanced ferroelectricity, piezoelectricity, and polar alignment in the ultrathin limit when it is interfaced with ferroelectric oxide PbZr0.2Ti0.8O3 films. Piezoresponse force microscopy studies reveal that the polar domains in thin CuInP2S6 fully conform to those of the underlying PbZr0.2Ti0.8O3, where the piezoelectric coefficient changes sign and increases sharply with reducing thickness. High temperature in situ domain imaging points to a significantly enhanced TC of >200 °C for 13 nm CuInP2S6 on PbZr0.2Ti0.8O3. Density functional theory modeling and Monte Carlo simulations show that the enhanced polar alignment and TC can be attributed to interface-mediated structure distortion in CuInP2S6. Our study provides an effective material strategy to engineer the polar properties of CuInP2S6 for flexible nanoelectronic, optoelectronic, and mechanical applications.

Superior ferroelectricity and nonlinear optical response in a hybrid germanium iodide hexagonal perovskite

Abundant chemical diversity and structural tunability make organic-inorganic hybrid perovskites (OIHPs) a rich ore for ferroelectrics. However, compared with their inorganic counterparts such as BaTiO₃, their ferroelectric key properties, including large spontaneous polarization (P_s), low coercive field (E_c), and strong second harmonic generation (SHG) response, have long been great challenges, which hinder their commercial applications. Here, a quasi-one-dimensional OIHP DMAGeI₃ (DMA = Dimethylamine) is reported, with notable ferroelectric attributes at room temperature: a large P_s of 24.14 μC/cm² (on a par with BaTiO₃), a low E_c below 2.2 kV/cm, and the strongest SHG intensity in OIHP family (about 12 times of KH₂PO₄ (KDP)). Revealed by the first-principles calculations, its large P_s originates from the synergistic effects of the stereochemically active 4s² lone pair of Ge²⁺ and the ordering of organic cations, and its low kinetic energy barrier of small DMA cations results in a low E_c. Our work brings the comprehensive ferroelectric performances of OIHPs to a comparable level with commercial inorganic ferroelectric perovskites.

Fluoropolymer ferroelectrics: Multifunctional platform for polar-structured energy conversion

Ferroelectric materials are currently some of the most widely applied material systems and are constantly generating improved functions with higher efficiencies. Advancements in poly(vinylidene fluoride) (PVDF)-based polymer ferroelectrics provide flexural, coupling-efficient, and multifunctional material platforms for applications that demand portable, lightweight, wearable, and durable features. We highlight the recent advances in fluoropolymer ferroelectrics, their energetic cross-coupling effects, and emerging technologies, including wearable, highly efficient electromechanical actuators and sensors, electrocaloric refrigeration, and dielectric devices. These developments reveal that the molecular and nanostructure manipulations of the polarization-field interactions, through facile defect biasing, could introduce enhancements in the physical effects that would enable the realization of multisensory and multifunctional wearables for the emerging immersive virtual world and smart systems for a sustainable future.

A Poling-Free Supramolecular Crown Ether Compound with Large Piezoelectricity

Supramolecular host-guest ferroelectrics based on solution processing are highly desirable because they are generally created with intrinsic piezoelectricity/ferroelectricity and do not need further poling. Poly(vinylidene fluoride) (PVDF) in the electric-active beta phase after stretching/annealing still shows no piezoelectric response unless poled. Although many supramolecular host-guest ferroelectrics have been discovered, their piezoelectricity is relatively small. Based on H/F substitution, we reported a supramolecular host-guest compound [(CF₃-C₆H₄-NH₃)(18-crown-6)][TFSA] (CF₃-C₆H₄-NH₃ = 4-trifluoromethylanilinium, TFSA = bis(trifluoromethanesulfonyl)ammonium) with a remarkable piezoelectric response of 42 pC/N under no poling condition. The introduction of F atoms increases phase transition temperature, polar axes, second harmonic generation (SHG) intensity, and piezoelectric coefficient d₃₃. To our knowledge, such a large piezoelectric performance of [(CF₃-C₆H₄-NH₃)(18-crown-6)][TFSA] makes its d₃₃, piezoelectric voltage coefficient g₃₃, and mechanical quality factor Q_m the highest among the reported supramolecular host-guest ferroelectric compounds and even larger than the values of PVDF. This work provides inspiration for optimizing piezoelectricity on molecular materials.

Light-Induced Tunable Ferroelectric Polarization in Dipole-Embedded Metal-Organic Framework

Reversible regulation of ferroelectric polarization possesses great potentials recently in bionic neural networks. Photoinduced cis-trans isomers have changeable dipole moments, but they cannot be directed to some specific orientation. Here, we construct a host-guest composite structure which consists of a porous ferroelectric metal (Ni)-organic framework [Ni(DPA)₂] as host and photoisomer, azobenzene (AZB), as guest molecules. When AZB molecules are embedded in the nanopores of Ni(DPA)₂ in the form of a single molecule, polarization strength tunable regulation is realized after ultraviolet irradiation of 365 and 405 nm via cis-trans isomerism transformation of AZB. An intrinsic built-in field originating from the distorted {NiN₂O₄} octahedra in Ni(DPA)₂ directs the dipole moments of AZB to the applied electric field. As a result, the overlapped ferroelectric polarization strength changes with content of cis-AZB after ultraviolet and visible irradiation. Such a connection of ferroelectric Ni(DPA)₂ structure with cis-trans isomers provides an important strategy for regulating the ferroelectric polarization strength.

Expedient secondary functions of flexible piezoelectrics for biomedical energy harvesting

Flexible piezoelectrics realise the conversion between mechanical movements and electrical power by conformally attaching onto curvilinear surfaces, which are promising for energy harvesting of biomedical devices due to their sustainable body movements and/or deformations. Developing secondary functions of flexible piezoelectric energy harvesters is becoming increasingly significant in recent years via aiming at issues that cannot be addressed or mitigated by merely increasing piezoelectric efficiencies. These issues include loose interfacial contact and pucker generation by stretching, power shortage or instability induced by inadequate mechanical energy, and premature function degeneration or failure caused by fatigue fracture after cyclic deformations. Herein, the expedient secondary functions of flexible piezoelectrics to mitigate above issues are reviewed, including stretchability, hybrid energy harvesting, and self-healing. Efforts have been devoted to understanding the state-of-the-art strategies and their mechanisms of achieving secondary functions based on piezoelectric fundamentals. The link between structural characteristic and function performance is unravelled by providing insights into carefully selected progresses. The remaining challenges of developing secondary functions are proposed in the end with corresponding outlooks. The current work hopes to help and inspire future research in this promising field focusing on developing the secondary functions of flexible piezoelectric energy harvesters.

A self-assembly growth strategy for a highly ordered ferroelectric nanoisland array

Ferroelectric nanoislands have attracted intensive research interest due to their size effect induced exotic physical properties and potential applications in non-volatile ferroelectric memories. However, the self-assembly growth of highly ordered ferroelectric nanoisland arrays is still a challenge. Here, by patterning a LaAlO₃ substrate with etched nanocavities to provide preferential nucleation sites, highly ordered self-assembled BiFeO₃ nanoisland arrays with robust ferroelectric topological quad-domain configurations were achieved. From the thermodynamic and kinetic perspectives, three factors are critical for achieving highly ordered self-assembled nanoisland arrays, that is, preferential nucleation sites, an appropriate relationship between the surface energy and the interface energy, and the growth rate difference of films. This approach can also be employed for the self-assembly growth of nanoisland arrays in other ferroelectric materials, which facilitates the design of ferroelectric nanostructure-based nanodevices.

Ultraviolet Photodetectors Based on Polymer Microwire Arrays toward Wearable Medical Devices

Polymer micro/nanoarchitectures have attracted intense interest for wearable medical applications due to their excellent mechanical flexibility, solution processability, and tunable optoelectronic properties. Based on polymer micro/nanostructures, high-performance ultraviolet (UV) photodetectors can not only functionalize the accurate image sensing but also sustain the biocomfortable flexible devices for real-time health monitoring. The main challenges are focused on the integration of medical wearable devices, which requires large-scale assembly of polymer micro/nanostructures with controlled morphology and strict alignment. Herein, we utilized a confined assembly system through the cautious regulation for the growth of high-quality polymer 1D arrays. UV photodetectors based on these polymer microwire arrays perform a high on/off ratio of 137 and responsivity of 19.1 mA W^-1. Polymer microarray photodetectors facilitate the scale-up fabrication of 14 × 18 multiplexed image sensors for highly accurate capturing the signals of Arabic numerals "1," "2," and "3." Flexible UV photodetectors based on these arrays present excellent flexibility and bending durability, maintaining 97% of their original on/off ratio after 4000 cycles with a 10 mm bending radius. UV photodetection signals were also collected from the attached flexible devices on the back skin of the mouse, demonstrating the great potential in wearable medical photodetection.

Nanomicelles Array for Ultrahigh-Density Data Storage

High-density data storage devices based on organic and polymer materials are currently restricted by two key issues, size limitations and uniformity of memory cells. Herein, one triblock polymer is synthesized by ring-opening metathesis polymerization, where the polymer contains an electron-donor-acceptor (A₁ D) segment, an electron-acceptor (A₂ ) segment, and a hydrophilic segment, that shows ternary memory behavior in a conventional sandwich-type device. The polymers that have monodisperse molecular weight dispersity self-assemble into nanomicelles with a uniform size of 80 nm. Each nanomicelle is composed of an A₁ DA₂ -type hydrophobic core stabilized with a hydrophilic shell. Nanobowls based on conductive oxide are prepared via the template method, wherein the nanomicelles are present as independent nanoscale memory units to produce an array of micelle matrices. Investigations of the resulting nanomemory device using conductive atomic force microscopy show that the micelles exhibit a predominant semiconductor memory behavior. Compared to traditional ternary devices with a memory unit size of ≈1 mm, this innovative fabrication method based on arrayed uniform nanomicelles downscales the size of storage cells to 80 nm. Furthermore, the described system leads to a greatly enhanced storage density (>10⁸ times over the same area), which opens up new paths for further development of ultrahigh-density data storage devices.

Electro-active properties of nanostructured films of cytosine and guanine nucleobases

The discovery of multifunctional properties related to electro-activity of organic systems of biomolecules is important for a variety of applications, especially for devices in the realm of biocompatible sensors and/or bioactuators. A further step towards such applications is to prepare thin films with the required properties. Here, the investigation is focused on the characterization of films of guanine and cytosine nucleobases, prepared by thermal evaporation-an industrial accessible deposition technique. The cytosine films have an orthorhombic non-centrosymmetric structure and grow in two interconnected nanostructured fractal patterns, of nearly equal proportion. Piezoresponse force microscopy images acquired at room temperature on the cytosine films display large zones with antiparallel alignment of the vertical components of the polarization vector. Guanine films have a dense nano-grained morphology. Our studies reveal electrical polarization switching effects which can be related to ferroelectricity in the films of guanine molecules. Characteristic ferroelectric polarization-electric-field hysteresis loops showing large electrical polarization are observed at low temperatures up to 200 K. Above this temperature, the guanine films have a preponderant paraelectric phase containing residual or locally induced nano-scopic ferroelectric domains, as observed by piezoresponse force microscopy at room temperature.

Stabilization of Interfacial Polarization and Induction of Polarization Hysteresis in Organic MISIM Devices

Molecule-based ferroelectrics has attracted much attention because of its advantages, such as flexibility, light weight, and low environmental load. In the present work, we examined an organic metal|insulator|semiconductor|insulator|metal (MISIM) device structure to stabilize the interfacial polarization in the S layer and to induce polarization hysteresis even without bulk ferroelectrics. The MISIM devices with I = parylene C and S = TMB (=3,3',5,5'-tetramethylbenzidine)-TCNQ (=tetracyanoquinodimethane) exhibited hysteresis loops in the polarization-voltage (P-V) curves not only at room temperature but also over a wide temperature range down to 80 K. The presence of polarization hysteresis for MISIM devices was theoretically confirmed by an electrostatic model, which also explained the observed thickness dependence of the I layers on the P-V curves. Polarization hysteresis curves were also obtained in MISIM devices using typical organic semiconductors (ZnPc, C₆₀, and TCNQ) as the S layer, demonstrating the versatility of the interfacial polarization mechanism.

Assembly of Close-Packed Ferroelectric Polymer Nanowires via Interface-Epitaxy with ReS2

The flexible, transparent, and low-weight nature of ferroelectric polymers makes them promising for wearable electronic and optical applications. To reach the full potential of the polarization-enabled device functionalities, large-scale fabrication of polymer thin films with well-controlled polar directions is called for, which remains a central challenge. The widely exploited Langmuir-Blodgett, spin-coating, and electrospinning methods only yield polymorphous or polycrystalline films, where the net polarization is compromised. Here, an easily scalable approach is reported to achieve poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) thin films composed of close-packed crystalline nanowires via interface-epitaxy with 1T'-ReS₂ . Upon controlled thermal treatment, uniform P(VDF-TrFE) films restructure into about 10 and 35 nm-wide (010)-oriented nanowires that are crystallographically aligned with the underlying ReS₂ , as revealed by high-resolution transmission electron microscopy. Piezoresponse force microscopy studies confirm the out-of-plane polar axis of the nanowire films and reveal coercive voltages as low as 0.1 V. Reversing the polarization can induce a conductance switching ratio of >10⁸ in bilayer ReS₂ , over six orders of magnitude higher than that achieved by an untreated polymer gate. This study points to a cost-effective route to large-scale processing of high-performance ferroelectric polymer thin films for flexible energy-efficient nanoelectronics.

PFM (piezoresponse force microscopy)-aided design for molecular ferroelectrics

With prosperity, decay, and another spring, molecular ferroelectrics have passed a hundred years since Valasek first discovered ferroelectricity in the molecular compound Rochelle salt. Recently, the proposal of ferroelectrochemistry has injected new vigor into this century-old research field. It should be highlighted that piezoresponse force microscopy (PFM) technique, as a non-destructive imaging and manipulation method for ferroelectric domains at the nanoscale, can significantly speed up the design rate of molecular ferroelectrics as well as enhance the ferroelectric and piezoelectric performances relying on domain engineering. Herein, we provide a brief review of the contribution of the PFM technique toward assisting the design and performance optimization of molecular ferroelectrics. Relying on the relationship between ferroelectric domains and crystallography, together with other physical characteristics such as domain switching and piezoelectricity, we believe that the PFM technique can be effectively applied to assist the design of high-performance molecular ferroelectrics equipped with multifunctionality, and thereby facilitate their practical utilization in optics, electronics, magnetics, thermotics, and mechanics among others.

Preparation, Physical Properties, and Applications of Water-Based Functional Polymer Inks

In this study, water-based functional polymer inks are prepared using different solvent displacement methods, in particular, polymer functional inks based on semiconducting polymer poly(3-hexylthiophene) and the ferroelectric polymer poly(vinylidene fluoride) and its copolymers with trifluoroethylene. The nanoparticles that are included in the inks are prepared by miniemulsion, as well as flash and dialysis nanoprecipitation techniques and we discuss the properties of the inks obtained by each technique. Finally, an example of the functionality of a semiconducting/ferroelectric polymer coating prepared from water-based inks is presented.

Enhanced crystallization by the virtue of the complete confinement of a ultrathin poly(3-hexylthiophene) film during the patterning process

The enhanced crystallization of the patterned poly(3-hexylthiophene) film based on the nanoimprinting lithography technique due to complete confinement.

Boosting the performance of ZnO microrod metal-semiconductor-metal photodetectors via surface capping of thin amorphous Al2O3 shell layer

1D ZnO nanostructures have been widely explored due to their potential applications in ultraviolet (UV) region photodetectors because of their unique structural and optoelectronic properties. However, a large number of surface defect states leading to a noticeable dark current hinders their practical applications in UV photodetection. In this work, we have shown improved ZnO/Al₂O₃ core-shell microrod photodetectors, whose performance is significantly enhanced by defect passivation and the introduction of trap states by atomic layer deposition grown thin amorphous Al₂O₃ shell layer, as evidenced by steady-state and transient photoluminescence investigations. The photodetectors demonstrated suppressed dark current and increased photocurrent after capping the Al₂O₃ layer. Specifically, the ZnO/Al₂O₃ core-shell microrod photodetector exhibited a photoresponsivity as high as 0.019 A/(W cm^-2) with the dark current as low as ∼1 × 10^-11 A, and a high I _light/I _dark ratio of ∼10⁴ under relatively weak light illumination (∼10 μW cm^-2). The results presented in this work provide valuable pathways to boost the performance of 1D ZnO microrod-based photodetectors for future practical applications.

Interfacial Nanostructuring of Poly(vinylidene fluoride) Homopolymer with Predominant Ferroelectric Phases

Facile preparation of poly(vinylidene fluoride) (PVDF) homopolymer nanoparticles (NPs) with monodispersed size distribution and predominant ferroelectric phases was done in an interfacial nonsolvent (water/methanol)-solvent (dimethylformamide (DMF))-polymer (PVDF) ternary system using two interfacial nanoassembly methods. First, a fluidic liquid-liquid interface consisting of two miscible solvents was created by introducing nonsolvent (water) under the PVDF solution. After the interface was created, the interface moved up to the DMF phase direction; PVDF NPs were produced through nonsolvent-induced phase separation. As the water content decreased in the nonsolvent by mixing with methanol, PVDF structures changed from nanoparticles with 252 nm average diameter (PVDF NP-1) to a porous membrane through membrane-wrapped NPs. The phenomena were found to be related to the mutual affinity of solvent, nonsolvent, and PVDF. When an additional external force was introduced to the water-DMF-PVDF system through magnetic stirring (reprecipitation method), smaller PVDF NPs with 61.4 nm diameter were obtained (PVDF NP-2). Both the as-prepared PVDF NPs were demonstrated with the predominant ferroelectric (electroactive (EA)) phase up to 97-98% among crystalline phases, which is apparently the highest value ever reported for PVDF homopolymer NPs. It is noteworthy that PVDF NP-2 showed a higher β phase ratio than that of PVDF NP-1, as proved using Fourier transform infrared (FT-IR) spectroscopy. Also, differential scanning calorimetry (DSC) and X-ray diffraction (XRD) measurements revealed that PVDF NP-1 exhibited higher crystallinity and that PVDF NP-2 underwent a well-separated two-step phase transition under heating. Results suggest that controlling interface formation with DMF and water plays a crucial role in manipulating ferroelectric PVDF nanostructures in terms of crystallinity and the ferroelectric β phase-to-γ phase ratio.

Self-polarized Poly(vinylidene fluoride) Ultrathin Film and Its Piezo/Ferroelectric Properties

Organic nonvolatile memory with ultralow power consumption is a critical research demand for next-generation memory applications. However, obtaining a large-area, highly oriented ferroelectric ultrathin film with low leakage current and stable ferroelectric switching remains a challenge for achieving low operation voltage in ferroelectric memory transistors. Here, an ideal ferroelectric neat PVDF ultrathin film with a high degree of orientation is fabricated by a melt-draw technique without post-thermal treatment and assisted stabilization process. The PVDF ultrathin film is self-polarized with predominantly vertical orientation of dipole moments, exhibiting a d₃₃ of 25 pm V^-1 and the ultralow coercive voltage of approximately 3 V characterized by piezoresponse force microscopy. A remnant polarization of 6.3 μC cm^-2 is identified based on a PVDF capacitor with an active layer formed by six layers of melt-drawn thin films. By employing a single-layer melt-drawn PVDF ultrathin film as an insulation layer, a bottom-gate-top-contact ferroelectric field-effect transistor is fabricated with a very low operation voltage of 5 V. It exhibits a memory window with an on/off current ratio of 10³ at zero gate bias and threshold voltage shift of around 2 V.

High-resolution structural mapping and single-domain switching kinetics in 2D-confined ferroelectric nanodots for low-power FeRAM

Ferroelectric nanostructures have received much attention because they can be used for the next generation of ferroelectric random-access memory (FeRAM) in flexible electronic devices. Manipulation of domain reversal in ferroelectric nanostructures is extremely important, but rarely studied. Herein, we present generic and reusable fabrication of 2D-confined P(VDF-TrFE) nanodots with an integration density of up to 4 Gbit per inch2, and then investigate the structural maps and the corresponding domain switching kinetics of P(VDF-TrFE) nanodots by atomic force microscope-based (AFM-based) technology. Meanwhile, their storage features, such as precise programmability and data stability, are well characterized by piezoresponse force microscopy (PFM). Remarkably, the ferroelectric crystals in single-confined P(VDF-TrFE) nanodots simultaneously aligned in a plane over the whole patterned region. 2D-confined P(VDF-TrFE) 50 : 50 nanodots has high-temperature ferroelectric (HT FE) phase with all-trans conformations, which endows them with excellent memory characteristics, such as a low operating voltage of 3 V, a short domain nucleation of 100 ms (by V = 10 V), a fast domain growth, an excellent writing-erasing repeatability, and a long retention time. Compared with normal ferroelectric materials, like P(VDF-TrFE) 70 : 30, approximately 150% ratio of energy loss and a 5-fold duration for domain nucleation can be saved. Especially, written domains were well confined in the P(VDF-TrFE) 50 : 50 nanodots, which attains precise programmability on a single nanodot. Our systematic study provides an alternative route for the fabrication of ferroelectric nanostructures that are worth considering for the next generation of flexible FeRAM in all-organic nanoelectronic devices.

Nanoporous thin films in optical waveguide spectroscopy for chemical analytics

Spectroscopy with planar optical waveguides is still an active field of research for the quantitative analysis of various supramolecular surface architectures and processes, and for applications in integrated optical chip communication, direct chemical sensing, etc. In this contribution, we summarize some recent development in optical waveguide spectroscopy using nanoporous thin films as the planar substrates that can guide the light just as well as bulk thin films. This is because the nanoporosity is at a spacial length-scale that is far below the wavelength of the guided light; hence, it does not lead to an enhanced scattering or additional losses of the optical guided modes. The pores have mainly two effects: they generate an enormous inner surface (up to a factor of 100 higher than the mere geometric dimensions of the planar substrate) and they allow for the exchange of material and charges between the two sides of the solid thin film. We demonstrate this for several different scenarios including anodized aluminum oxide layers for the ultrasensitive determination of the refractive index of fluids, or the label-free detection of small analytes binding from the pore inner volume to receptors immobilized on the pore surface. Using a thin film of Ti metal for the anodization results in a nanotube array offering an even further enhanced inner surface and the possibility to apply electrical potentials via the resulting TiO₂ semiconducting waveguide structure. Nanoporous substrates fabricated from SiN_x thin films by colloid lithography, or made from SiO₂ by e-beam lithography, will be presented as examples where the porosity is used to allow for the passage of ions in the case of tethered lipid bilayer membranes fused on top of the light-guiding layer, or the transport of protons through membranes used in fuel cell applications. The final example that we present concerns the replication of the nanopore structure by polymers in a process that leads to a nanorod array that is equally well suited to guide the light as the mold; however, it opens a totally new field for integrated optics formats for direct chemical and biomedical sensing with an extension to even molecularly imprinted structures. Graphical abstract.

Ultrahigh β-phase content poly(vinylidene fluoride) with relaxor-like ferroelectricity for high energy density capacitors

Poly(vinylidene fluoride)-based dielectric materials are prospective candidates for high power density electric storage applications because of their ferroelectric nature, high dielectric breakdown strength and superior processability. However, obtaining a polar phase with relaxor-like behavior in poly(vinylidene fluoride), as required for high energy storage density, is a major challenge. To date, this has been achieved using complex and expensive synthesis of copolymers and terpolymers or via irradiation with high-energy electron-beam or γ-ray radiations. Herein, a facile process of pressing-and-folding is proposed to produce β-poly(vinylidene fluoride) (β-phase content: ~98%) with relaxor-like behavior observed in poly(vinylidene fluoride) with high molecular weight > 534 kg mol⁻¹, without the need of any hazardous gases, solvents, electrical or chemical treatments. An ultra-high energy density (35 J cm⁻³) with a high efficiency (74%) is achieved in a pressed-and-folded poly(vinylidene fluoride) (670-700 kg mol⁻¹), which is higher than that of other reported polymer-based dielectric capacitors to the best of our knowledge.

Dielectric materials are candidates for electric high power density energy storage applications, but fabrication is challenging. Here the authors report a pressing-and-folding processing of a dielectric with relaxor-like behavior, leading to high energy density in a polymer-based dielectric capacitor.

Nano-confined crystallization of organic ultrathin nanostructure arrays with programmable geometries

Fabricating ultrathin organic semiconductor nanostructures attracts wide attention towards integrated electronic and optoelectronic applications. However, the fabrication of ultrathin organic nanostructures with precise alignment, tunable morphology and high crystallinity for device integration remains challenging. Herein, an assembly technique for fabricating ultrathin organic single-crystal arrays with different sizes and shapes is achieved by confining the crystallization process in a sub-hundred nanometer space. The confined crystallization is realized by controlling the deformation of the elastic topographical templates with tunable applied pressures, which produces organic nanostructures with ordered crystallographic orientation and controllable thickness from less than 10 nm to ca. 1 μm. The generality is verified for patterning various typical solution-processable materials with long-range order and pure orientation, including organic small molecules, polymers, metal-halide perovskites and nanoparticles. It is anticipated that this technique with controlling the crystallization kinetics by the governable confined space could facilitate the electronic integration of organic semiconductors.

Fabrication of ultrathin organic semiconductor nanostructures with precise alignment, tuneable morphology and high crystallinity remains challenging. Here the authors use an assembly technique with dewetting process controllability for patterning organic single-crystal arrays in a sub-hundred nanometer space.

Low-Voltage Organic Transistor Memory Fiber with a Nanograined Organic Ferroelectric Film

Wearable technology offers new ways to be more proactive about our health and surroundings in real time. For next-generation wearable systems, robust storage and recording media are required to monitor and process the essential electrical signals generated under various unpredictable strain conditions. Here, we report the first fibriform organic transistor memory integrated on a thin and flexible metal wire. A capillary tube coating system allows the formation of a thin and nanograined organic ferroelectric film on the wire. The uniform morphology imparts excellent switching stability (∼100 cycles), quasi-permanent retention (over 5 × 10⁴ s), and low-voltage operation (below 5 V) to the fiber-shaped memory devices. When sewn in a stretchable textile fabric, the memory fiber achieves long retention time of more than 10⁴ s with negligible degradation of memory window even under a constant diagonal strain of 100% that exhibits reliable data storage under tough environments. These results illustrate the possibility of the practical, wearable fiber memory for recording electronic signals in smart garment applications.