1
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Xing S, Wang B, Zhao T, Zhou J, Sun Z. Independent Electrical Control of Spin and Valley Degrees in 2D Breathing Kagome Ta 3I 8 with Intrinsic Triferroicity. J Phys Chem Lett 2024; 15:6489-6495. [PMID: 38869432 DOI: 10.1021/acs.jpclett.4c00858] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
Independent electrical control of spin and valley degrees of freedom (DOFs) in 2D materials is difficult due to the coupling of spin and valley DOFs. Here we propose that spin-filter transport and valley polarization can be independently manipulated by an electric field in 2D breathing kagome Ta3I8 due to the possession of both triferroic (ferromagnetism, ferroelectric, and ferrovalley) and bipolar magnetic semiconducting characteristics. The spin-filter transport can be realized by applying a bias voltage without altering the semiconducting characteristic. The flip of valley polarization is fulfilled by switching the ferroelectric polarization with a gate voltage. Our results demonstrate the potential to control different DOFs independently by adjusting the direction of the electric field.
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Affiliation(s)
- Shucheng Xing
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Bing Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Tong Zhao
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Jian Zhou
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zhimei Sun
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
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2
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Sharma S, Rojas-George G, Kumar M, Kumar P, Kumar R, Kumar S, Siqueiros JM, Herrera OR. Impact of Cr Doping on the Structural, Optical, and Magnetic Properties of Sol-Gel-Synthesized Bi 0.80Ba 0.10Pr 0.10FeO 3 Nanopowders. ACS OMEGA 2024; 9:27549-27558. [PMID: 38947788 PMCID: PMC11209930 DOI: 10.1021/acsomega.4c03032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/29/2024] [Revised: 05/27/2024] [Accepted: 05/31/2024] [Indexed: 07/02/2024]
Abstract
The sol-gel route was used to synthesize a series of compounds of the system Bi0.8Ba0.10Pr0.10Fe1-x Cr x O3 within the 0 ≤ x ≤ 0.15 compositional range. To explore the impact of Cr3+ ion substitution on the structural, dielectric, optical, and magnetic properties, we introduced varying concentrations of Cr3+ while maintaining a fixed 10% atomic concentration of each Ba2+ and Pr2+ in BiFeO3. X-ray diffraction analysis revealed a structural phase transition from rhombohedral (R3c) for an undoped (i.e., without Cr) sample to two coexisting phases, i.e., a mix of rhombohedral and orthorhombic (Pbnm) phases for the Cr-doped samples. Cr3+ doping significantly changes the band gap energy from 1.84 eV (x = 0.0) to 1.93 eV (x = 0.15), which makes this material suitable for photovoltaic applications. Furthermore, each sample exhibited ferromagnetic behavior due to the disruption of the spiral spin structures and adjustments in superexchange interactions, attributed to modifications in the Fe-O and Fe-O-Fe bond lengths. A reduction in magnetization is observed at higher Cr concentrations that can be ascribed to the dilution of magnetic moments due to the increase of the orthorhombic phase percentage and the introduction of nonmagnetic Cr3+ ions. Our results show that Cr doping in the Bi0.8Ba0.10Pr0.10FeO3 system induces enhanced multiferroic properties at room temperature.
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Affiliation(s)
- Subhash Sharma
- CONAHCyT-Centro
de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km 107 Carretera Tijuana-Ensenada,
AP 14, Ensenada 22860, Baja California, Mexico
- Centro
de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km 107 Carretera Tijuana-Ensenada,
AP 14, Ensenada 22860, Baja California, Mexico
| | - Gabriel Rojas-George
- CONAHCyT—Centro
de Investigación en Materiales Avanzados, S.C., Miguel de Cervantes 120, Complejo
Industrial Chihuahua, Chihuahua 31136, Chihuahua, Mexico
| | - Manish Kumar
- Experimental
Research Laboratory, Department of Physics, ARSD College, University of Delhi, New Delhi 110021, India
| | - Pawan Kumar
- School
of Basic and Applied Sciences, K. R. Mangalam
University, Gurugram, Haryana 122103, India
| | - Rajesh Kumar
- Department
of Chemistry, Himachal Pradesh University, Summer Hill, Shimla-5, Shimla 171005, India
| | - Santosh Kumar
- Department
of Chemistry, Himachal Pradesh University, Summer Hill, Shimla-5, Shimla 171005, India
| | - Jesús M. Siqueiros
- Centro
de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km 107 Carretera Tijuana-Ensenada,
AP 14, Ensenada 22860, Baja California, Mexico
| | - Oscar Raymond Herrera
- Centro
de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México, Km 107 Carretera Tijuana-Ensenada,
AP 14, Ensenada 22860, Baja California, Mexico
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3
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Belrhazi H, Fattouhi M, El Hafidi MY, El Hafidi M. Reconfigurable Skyrmion-Based Logic Gates: Versatile Design and Full-Scale Implementation. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3703-3718. [PMID: 38214036 DOI: 10.1021/acsami.3c16542] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
Herein, we investigate the behavior of skyrmions within a racetrack design incorporating voltage-controlled magnetic anisotropy (VCMA) gates. Our analysis encompassed multiple forces, including spin currents and anisotropy gradients induced by bias voltages. As a result, the efficient control of skyrmion dynamics was achieved across various VCMA gate configurations. Building upon these findings, we propose an efficient approach to reconfigurable skyrmion logic (RSL) in a thin antiferromagnetic (AFM) film through a versatile design. Our RSL harnesses the selective integration of VCMA, spin-polarized currents, and skyrmion-skyrmion (sky-sky) interactions to implement multiple logic gates, including AND, OR, XOR, NOT, NAND, XNOR, and NOR. The design brings a significant advantage with its simplified fabrication process, making the implementation of the RSL practical and accessible for various applications. Furthermore, the RSL enables seamless dynamic switching between logic gates, thereby enhancing its multifunctionality. Additionally, the strategic incorporation of sky-sky interactions and skyrmion-edge repulsion prominently facilitates the realization of complex gates, such as NAND, XNOR, and NOR gates, that typically require intricate design efforts. Hence, this streamlined integration of RSL, coupled with its adaptability to changing computational needs, underscores its potential as a practical solution for implementing high-functionality skyrmion-based logic gates.
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Affiliation(s)
- Hamza Belrhazi
- Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165 Casablanca, Morocco
| | - Mouad Fattouhi
- Department of Applied Physics, University of Salamanca, 37008 Salamanca, Spain
| | - M Youssef El Hafidi
- Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165 Casablanca, Morocco
| | - Mohamed El Hafidi
- Condensed Matter Physics Laboratory, Department of Physics, Faculty of Science Ben M'sik, Hassan II University of Casablanca, D. El Harty Av., B.P 7955, 20165 Casablanca, Morocco
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4
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Hasan MU, Kossak AE, Beach GSD. Large exchange bias enhancement and control of ferromagnetic energy landscape by solid-state hydrogen gating. Nat Commun 2023; 14:8510. [PMID: 38129380 PMCID: PMC10740009 DOI: 10.1038/s41467-023-43955-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Accepted: 11/24/2023] [Indexed: 12/23/2023] Open
Abstract
Voltage control of exchange bias is desirable for spintronic device applications, however dynamic modulation of the unidirectional coupling energy in ferromagnet/antiferromagnet bilayers has not yet been achieved. Here we show that by solid-state hydrogen gating, perpendicular exchange bias can be enhanced by > 100% in a reversible and analog manner, in a simple Co/Co0.8Ni0.2O heterostructure at room temperature. We show that this phenomenon is an isothermal analog to conventional field-cooling and that sizable changes in average coupling energy can result from small changes in AFM grain rotatability. Using this method, we show that a bi-directionally stable ferromagnet can be made unidirectionally stable, with gate voltage alone. This work provides a means to dynamically reprogram exchange bias, with broad applicability in spintronics and neuromorphic computing, while simultaneously illuminating fundamental aspects of exchange bias in polycrystalline films.
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Affiliation(s)
- M Usama Hasan
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Materials and Metallurgical Engineering, Bangladesh University of Engineering and Technology, Dhaka, 1000, Bangladesh
| | - Alexander E Kossak
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Geoffrey S D Beach
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
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5
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Tang X, Sima W, Sun P, Zun C, Yuan T, Yang M, Shi Z, Yang H, Deng Q. In Situ Self-Fluorescence 3D Imaging of Micro/Nano Damage in Silicone Gel for Understanding Insulation Failure under High-Frequency Electric Fields. ACS APPLIED MATERIALS & INTERFACES 2023; 15:55082-55094. [PMID: 37936415 DOI: 10.1021/acsami.3c12047] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2023]
Abstract
Strong electromagnetic and heat flux stresses can induce severe damage to solid insulation materials, leading to faults in power equipment and power electronics devices. However, in the absence of suitable in situ imaging methods for observing the development and morphology of electrical damage within insulation materials, the mechanism of insulation failure under high-frequency electric fields has remained elusive. In this work, a recently discovered fluorescence self-excitation phenomenon in electrical damage channels of polymers is used as the basis for a laser confocal imaging method that is able to realize three-dimensional (3D) in situ imaging of electrical tree channels in silicone gel through nondestructive means. Based on the reconstructed morphology of the damaged area, a spatial equivalent calculation model is proposed for analysis of the 3D geometric features of electrical trees. The insulation failure mechanism of silicone gel under electric fields of different frequencies is analyzed through ReaxFF molecular dynamics simulations of the thermal cracking process. This work provides a new method for in situ nondestructive 3D imaging of micro/nanoscale damage structures within polymers with potential applications to material analysis and defect diagnosis.
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Affiliation(s)
- Xinyu Tang
- State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing 400044, China
| | - Wenxia Sima
- State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing 400044, China
| | - Potao Sun
- State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing 400044, China
| | - Chun Zun
- Key Laboratory of Energy Thermal Conversion and Control, Ministry of Education, School of Energy and Environment, Southeast University, Nanjing 210096, China
| | - Tao Yuan
- State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing 400044, China
| | - Ming Yang
- State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing 400044, China
| | - Zeyan Shi
- State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing 400044, China
| | - Haoyue Yang
- State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing 400044, China
| | - Qin Deng
- Analytical and Testing Center, Chongqing University, Chongqing 400030, China
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6
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Deng Z, Wang X, Wang M, Shen F, Zhang J, Chen Y, Feng HL, Xu J, Peng Y, Li W, Zhao J, Wang X, Valvidares M, Francoual S, Leupold O, Hu Z, Tjeng LH, Li MR, Croft M, Zhang Y, Liu E, He L, Hu F, Sun J, Greenblatt M, Jin C. Giant Exchange-Bias-Like Effect at Low Cooling Fields Induced by Pinned Magnetic Domains in Y 2 NiIrO 6 Double Perovskite. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209759. [PMID: 36795948 DOI: 10.1002/adma.202209759] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2022] [Revised: 02/06/2023] [Indexed: 05/17/2023]
Abstract
Exchange bias (EB) is highly desirable for widespread technologies. Generally, conventional exchange-bias heterojunctions require excessively large cooling fields for sufficient bias fields, which are generated by pinned spins at the interface of ferromagnetic and antiferromagnetic layers. It is crucial for applicability to obtain considerable exchange-bias fields with minimum cooling fields. Here, an exchange-bias-like effect is reported in a double perovskite, Y2 NiIrO6 , which shows long-range ferrimagnetic ordering below 192 K. It displays a giant bias-like field of 1.1 T with a cooling field of only 15 Oe at 5 K. This robust phenomenon appears below 170 K. This fascinating bias-like effect is the secondary effect of the vertical shifts of the magnetic loops, which is attributed to the pinned magnetic domains due to the combination of strong spin-orbit coupling on Ir, and antiferromagnetically coupled Ni- and Ir-sublattices. The pinned moments in Y2 NiIrO6 are present throughout the full volume, not just at the interface as in conventional bilayer systems.
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Affiliation(s)
- Zheng Deng
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Chemistry and Chemical Biology, Rutgers the State University of New Jersey, 123 Bevier Road, Piscataway, NJ, 08854, USA
| | - Xiao Wang
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straβe 40, Dresden, 01187, Dresden, Germany
| | - Mengqin Wang
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Feiran Shen
- Spallation Neutron Source Science Center, Institute of High Energy Physics, Chinese Academy of Sciences, Dongguan, 523803, P. R. China
| | - Jine Zhang
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yuansha Chen
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hai L Feng
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jiawang Xu
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yi Peng
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Wenmin Li
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jianfa Zhao
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xiancheng Wang
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Manuel Valvidares
- ALBA Synchrotron Light Source, Cerdanyola del Valles, Barcelona, 08290, Spain
| | - Sonia Francoual
- Deutsches Elektronen-Synchrotron (DESY), Notkestraße 85, Hamburg, 22607, Hamburg, Germany
| | - Olaf Leupold
- Deutsches Elektronen-Synchrotron (DESY), Notkestraße 85, Hamburg, 22607, Hamburg, Germany
| | - Zhiwei Hu
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straβe 40, Dresden, 01187, Dresden, Germany
| | - Liu Hao Tjeng
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straβe 40, Dresden, 01187, Dresden, Germany
| | - Man-Rong Li
- Key Laboratory of Bioinorganic and Synthetic Chemistry of Ministry of Education, School of Chemistry, Sun Yat-Sen University, Guangzhou, 510275, P. R. China
| | - Mark Croft
- Department of Physics and Astronomy, Rutgers the State University of New Jersey, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA
| | - Ying Zhang
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Enke Liu
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Lunhua He
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Spallation Neutron Source Science Center, Songshan Lake Materials Laboratory, Dongguan, 523808, P. R. China
| | - Fengxia Hu
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jirong Sun
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Martha Greenblatt
- Department of Chemistry and Chemical Biology, Rutgers the State University of New Jersey, 123 Bevier Road, Piscataway, NJ, 08854, USA
| | - Changqing Jin
- Institute of Physics, Chinese Academy of Sciences, School of Physics, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
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7
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Wu M, Sun F, Wang X, Zhang X, Chen W, Zheng Y. Facile Control of Ferroelastic Domain Patterns in Multiferroic Thin Films by a Scanning Tip Bias. ACS APPLIED MATERIALS & INTERFACES 2023; 15:11983-11993. [PMID: 36808955 DOI: 10.1021/acsami.2c20106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
BiFeO3, known as the "holy grail of all multiferroics", provides an appealing platform for exploration of multifield coupling physics and design of functional devices. Many fantastic properties of BiFeO3 are regulated by its ferroelastic domain structure. However, a facile programable control on the ferroelastic domain structure in BiFeO3 remains challenging and our understanding on the existing control strategies is also far from complete. This work reports a facile control of ferroelastic domain patterns in BiFeO3 thin films under area scanning poling by exploiting the tip bias as the control parameter. Combining scanning probe microscopy experiments and simulations, we found that BiFeO3 thin films with pristine 71° rhombohedral-phase stripe domains exhibit at least four switching pathways solely by controlling the scanning tip bias. As a result, one can readily write mesoscopic topological defects into the films without the necessity to change the tip motion. The correlation between conductance of the scanned region and the switching pathway is further investigated. Our results extend the current understanding on the domain switching kinetics and the coupled electronic transport properties in BiFeO3 thin films. The facile voltage control of ferroelastic domains should facilitate the development of configurable electronic and spintronic devices.
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Affiliation(s)
- Mengjun Wu
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Fei Sun
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xintong Wang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xiaoyue Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Weijin Chen
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- School of Materials, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, China
| | - Yue Zheng
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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8
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Yang S, Son JW, Ju TS, Tran DM, Han HS, Park S, Park BH, Moon KW, Hwang C. Magnetic Skyrmion Transistor Gated with Voltage-Controlled Magnetic Anisotropy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208881. [PMID: 36511234 DOI: 10.1002/adma.202208881] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Revised: 11/27/2022] [Indexed: 06/17/2023]
Abstract
The paradigm shift of information carriers from charge to spin has long been awaited in modern electronics. The invention of the spin-information transistor is expected to be an essential building block for the future development of spintronics. Here, a proof-of-concept experiment of a magnetic skyrmion transistor working at room temperature, which has never been demonstrated experimentally, is introduced. With the spatially uniform control of magnetic anisotropy, the shape and topology of a skyrmion when passing the controlled area can be maintained. The findings will open a new route toward the design and realization of skyrmion-based spintronic devices in the near future.
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Affiliation(s)
- Seungmo Yang
- Quantum Spin Team, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Jong Wan Son
- Quantum Spin Team, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Tae-Seong Ju
- Quantum Spin Team, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
- Department of Physics, Pusan National University, Busan, 46241, Republic of Korea
| | - Duc Minh Tran
- Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul, 05029, Republic of Korea
| | - Hee-Sung Han
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Sungkyun Park
- Department of Physics, Pusan National University, Busan, 46241, Republic of Korea
| | - Bae Ho Park
- Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul, 05029, Republic of Korea
| | - Kyoung-Woong Moon
- Quantum Spin Team, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
| | - Chanyong Hwang
- Quantum Spin Team, Korea Research Institute of Standards and Science, Daejeon, 34113, Republic of Korea
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9
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Salje EKH, Kustov S. Dynamic domain boundaries: chemical dopants carried by moving twin walls. Phys Chem Chem Phys 2023; 25:1588-1601. [PMID: 36602278 DOI: 10.1039/d2cp04908b] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Domain walls and specifically ferroelastic twin boundaries are depositaries and fast diffusion pathways for chemical dopants and intrinsic lattice defects. Ferroelastic domain patterns act as templates for chemical structures where the walls are the device and not the bulk. Several examples of such engineered domain boundaries are given. Moving twin boundaries are shown to carry with them the dopants, although the activation of this mechanism depends sensitively on the applied external force. If the force is too weak, the walls remain pinned while too strong forces break the walls free of the dopants and move them independently. Several experimental methods and approaches are discussed.
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Affiliation(s)
- E K H Salje
- Department of Earth Sciences, University of Cambridge, Cambridge, UK.
| | - S Kustov
- Department of Physics, University of Balearic Islands, 07122 Palma de Mallorca, Spain
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10
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Gogoi L, Gao W, Ajayan PM, Deb P. Quantum magnetic phenomena in engineered heterointerface of low-dimensional van der Waals and non-van der Waals materials. Phys Chem Chem Phys 2023; 25:1430-1456. [PMID: 36601788 DOI: 10.1039/d2cp05228h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Investigating magnetic phenomena at the microscopic level has emerged as an indispensable research domain in the field of low-dimensional magnetic materials. Understanding quantum phenomena that mediate the magnetic interactions in dimensionally confined materials is crucial from the perspective of designing cheaper, compact, and energy-efficient next-generation spintronic devices. The infrequent occurrence of intrinsic long-range magnetic order in dimensionally confined materials hinders the advancement of this domain. Hence, introducing and controlling the ferromagnetic character in two-dimensional materials is important for further prospective studies. The interface in a heterostructure significantly contributes to modulating its collective magnetic properties. Quantum phenomena occurring at the interface of engineered heterostructures can enhance or suppress magnetization of the system and introduce magnetic character to a native non-magnetic system. Considering most 2D magnetic materials are used as stacks with other materials in nanoscale devices, the methods to control the magnetism in a heterostructure and understanding the corresponding mechanism are crucial for promising spintronic and other functional applications. This review highlights the effect of electric polarization of the adjacent layer, changed structural configuration at the vicinity of the interface, natural strain induced by lattice mismatch, and exchange interaction in the interfacial region in modulating the magnetism of heterostructures of van der Waals and non-van der Waals materials. Further, prospects of interface-engineered magnetism in spin-dependent device applications are also discussed.
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Affiliation(s)
- Liyenda Gogoi
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur, 784028, India.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Pulickel M Ajayan
- Benjamin M. and Mary Greenwood Anderson Professor of Engineering, Department of Materials Science and NanoEngineering, Rice University, 6100 Main Street, Houston, Texas 77005, USA.
| | - Pritam Deb
- Advanced Functional Materials Laboratory, Department of Physics, Tezpur University (Central University), Tezpur, 784028, India.
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11
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Hu C, Chen J, Du E, Ju W, An Y, Gong SJ. Ferroelectric control of band alignments and magnetic properties in the two-dimensional multiferroic VSe 2/In 2Se 3. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:425801. [PMID: 35878601 DOI: 10.1088/1361-648x/ac8406] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2022] [Accepted: 07/25/2022] [Indexed: 06/15/2023]
Abstract
Our first-principles evidence shows that the two-dimensional (2D) multiferroic VSe2/In2Se3experiences continuous change of electronic structures, i.e. with the change of the ferroelectric (FE) polarization of In2Se3, the heterostructure can possess type-I, -II, and -III band alignments. When the FE polarization points from In2Se3to VSe2, the heterostructure has a type-III band alignment, and the charge transfer from In2Se3into VSe2induces half-metallicity. With reversal of the FE polarization, the heterostructure enters the type-I band alignment, and the spin-polarized current is turned off. When the In2Se3is depolarized, the heterostructure has a type-II band alignment. In addition, influence of the FE polarization on magnetism and magnetic anisotropy energy of VSe2was also analyzed, through which we reveal the interfacial magnetoelectric coupling effects. Our investigation about VSe2/In2Se3predicts its wide applications in the fields of both 2D spintronics and multiferroics.
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Affiliation(s)
- Chen Hu
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Ju Chen
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Erwei Du
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Weiwei Ju
- College of Physics and Engineering and Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Yipeng An
- School of Physics and Henan Key Laboratory of Boron Chemistry and Advanced Energy Materials, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Shi-Jing Gong
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
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12
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Albarakati S, Xie WQ, Tan C, Zheng G, Algarni M, Li J, Partridge J, Spencer MJS, Farrar L, Xiong Y, Tian M, Wang X, Zhao YJ, Wang L. Electric Control of Exchange Bias Effect in FePS 3-Fe 5GeTe 2 van der Waals Heterostructures. NANO LETTERS 2022; 22:6166-6172. [PMID: 35912475 DOI: 10.1021/acs.nanolett.2c01370] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Manipulating the exchange bias (EB) effect using an electronic gate is a significant goal in spintronics. The emergence of van der Waals (vdW) magnetic heterostructures has provided improved means to study interlayer magnetic coupling, but to date, these heterostructures have not exhibited electrical gate-controlled EB effects. Here, we report electrically controllable EB effects in a vdW heterostructure, FePS3-Fe5GeTe2. By applying a solid protonic gate, the EB effects were repeatably electrically tuned. The EB field reaches up to 23% of the coercivity and the blocking temperature ranges from 30 to 60 K under various gate-voltages. The proton intercalations not only tune the average magnetic exchange coupling but also change the antiferromagnetic configurations in the FePS3 layer. These result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step toward vdW heterostructure-based magnetic logic for future low-energy electronics.
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Affiliation(s)
- Sultan Albarakati
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
- Physics Department, Faculty of Science and Arts, University of Jeddah, P.O. Box 80200, 21589Khulais, Saudi Arabia
| | - Wen-Qiang Xie
- Department of Physics, South China University of Technology, Guangzhou510640, China
| | - Cheng Tan
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Guolin Zheng
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China
| | - Meri Algarni
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Junbo Li
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China
| | - James Partridge
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Michelle J S Spencer
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Lawrence Farrar
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
| | - Yimin Xiong
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China
| | - Mingliang Tian
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei, Anhui230031, China
- Department of Physics, School of Physics and Materials Science, Anhui University, Hefei, Anhui230601, China
| | - Xiaolin Wang
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales2500, Australia
- Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, New South Wales2500, Australia
| | - Yu-Jun Zhao
- Department of Physics, South China University of Technology, Guangzhou510640, China
| | - Lan Wang
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, Victoria3001, Australia
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13
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Mittal S, Garg S, Bhandari H, Sharma V. A Review on Recent Progressions of Bismuth Ferrite Modified Morphologies as an Effective Photocatalyst to curb Water and Air Pollution. INORG CHEM COMMUN 2022. [DOI: 10.1016/j.inoche.2022.109834] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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14
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Martínez J, Mosquera-Vargas E, Fuenzalida V, Flores M, Bolaños G, Diosa J. Surface and Electrical Characterization of Bilayers Based on BiFeO3 and VO2. NANOMATERIALS 2022; 12:nano12152578. [PMID: 35957006 PMCID: PMC9370327 DOI: 10.3390/nano12152578] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/29/2022] [Revised: 07/22/2022] [Accepted: 07/23/2022] [Indexed: 12/04/2022]
Abstract
Thin films of BiFeO3, VO2, and BiFeO3/VO2 were grown on SrTiO3(100) and Al2O3(0001) monocrystalline substrates using radio frequency and direct current sputtering techniques. To observe the effect of the coupling between these materials, the surface of the films was characterized by profilometry, atomic force microscopy, and X-ray photoelectron spectroscopy. The heterostructures, monolayers, and bilayers based on BiFeO3 and VO2 grew with good adhesion and without delamination or signs of incompatibility between the layers. A good granular arrangement and RMS roughness between 1 and 5 nm for the individual layers (VO2 and BiFeO3) and between 6 and 18 nm for the bilayers (BiFeO3/VO2) were observed. Their grain size is between 20 nm and 26 nm for the individual layers and between 63 nm and 67 nm for the bilayers. X-ray photoelectron spectroscopy measurements show a higher proportion of V4+, Bi3+, and Fe3+ in the films obtained. The homogeneous ordering, low roughness, and oxidation states on the obtained surface show a good coupling in these films. The I-V curves show ohmic behavior at room temperature and change with increasing temperature. The effect of coupling these materials in a thin film shows the appearance of hysteresis cycles, I-V and R-T, which is typical of materials with high potential in applications, such as resistive memories and solar cells.
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Affiliation(s)
- Jhonatan Martínez
- Grupo de Transiciones de Fase y Materiales Funcionales, Departamento de Física, FCNE, Universidad del Valle, Santiago de Cali 76001, Colombia;
| | - Edgar Mosquera-Vargas
- Grupo de Transiciones de Fase y Materiales Funcionales, Departamento de Física, FCNE, Universidad del Valle, Santiago de Cali 76001, Colombia;
- Centro de Excelencia en Nuevos Materiales (CENM), Universidad del Valle, Santiago de Cali 76001, Colombia
- Correspondence: (E.M.-V.); (G.B.); (J.D.)
| | - Víctor Fuenzalida
- Laboratorio de Superficies y Nanomateriales, Departamento de Física, FCFM, Universidad de Chile, Av. Blanco Encalada 2008, Santiago de Chile 837.0415, Chile; (V.F.); (M.F.)
| | - Marcos Flores
- Laboratorio de Superficies y Nanomateriales, Departamento de Física, FCFM, Universidad de Chile, Av. Blanco Encalada 2008, Santiago de Chile 837.0415, Chile; (V.F.); (M.F.)
| | - Gilberto Bolaños
- Grupo de Física de Bajas Temperaturas, Universidad del Cauca, Popayán 190002, Colombia
- Correspondence: (E.M.-V.); (G.B.); (J.D.)
| | - Jesús Diosa
- Grupo de Transiciones de Fase y Materiales Funcionales, Departamento de Física, FCNE, Universidad del Valle, Santiago de Cali 76001, Colombia;
- Centro de Excelencia en Nuevos Materiales (CENM), Universidad del Valle, Santiago de Cali 76001, Colombia
- Correspondence: (E.M.-V.); (G.B.); (J.D.)
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15
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Electric-Field-Tunable Transport and Photo-Resistance Properties in LaMnO3−x/PMN-PT Heterostructures. COATINGS 2022. [DOI: 10.3390/coatings12070890] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Abstract
Multiferroic heterojunctions are promising for application in low-power storage and spintronics due to their magnetoelectric coupling properties. Controlling the magnetic and transport properties of magnetic materials by external stimuli and then realizing advanced devices constitute the key mission in this field. We fabricated a multiferroic heterostructure consisting of a ferroelectric single-crystal (001)-0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrate and an epitaxial 40 nm LaMnO3−x film. By applying dc electric fields to the ferroelectric substrate, the resistance and the photo-resistance of the LaMnO3−x film could be significantly modulated. With the electric field increasing from 0 to +4.8 kV/cm, the photo-resistance increased by ~4.1% at room temperature. The curve of photo-resistance versus the cycling electric field has a butterfly shape due to the piezoelectric strain effect. Using in situ X-ray diffraction measurements, the linear relationship of the strain and the electric field was quantitatively studied.
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16
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Tang Y, Chiabrera F, Morata A, Cavallaro A, Liedke MO, Avireddy H, Maller M, Butterling M, Wagner A, Stchakovsky M, Baiutti F, Aguadero A, Tarancón A. Ion Intercalation in Lanthanum Strontium Ferrite for Aqueous Electrochemical Energy Storage Devices. ACS APPLIED MATERIALS & INTERFACES 2022; 14:18486-18497. [PMID: 35412787 DOI: 10.1021/acsami.2c01379] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Ion intercalation of perovskite oxides in liquid electrolytes is a very promising method for controlling their functional properties while storing charge, which opens up its potential application in different energy and information technologies. Although the role of defect chemistry in oxygen intercalation in a gaseous environment is well established, the mechanism of ion intercalation in liquid electrolytes at room temperature is poorly understood. In this study, the defect chemistry during ion intercalation of La0.5Sr0.5FeO3-δ thin films in alkaline electrolytes is studied. Oxygen and proton intercalation into the La1-xSrxFeO3-δ perovskite structure is observed at moderate electrochemical potentials (0.5 to -0.4 V), giving rise to a change in the oxidation state of Fe (as a charge compensation mechanism). The variation of the concentration of holes as a function of the intercalation potential is characterized by in situ ellipsometry, and the concentration of electron holes is indirectly quantified for different electrochemical potentials. Finally, a dilute defect chemistry model that describes the variation of defect species during ionic intercalation is developed.
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Affiliation(s)
- Yunqing Tang
- Department of Advanced Materials for Energy Applications, Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs, Barcelona, Spain
| | - Francesco Chiabrera
- Department of Advanced Materials for Energy Applications, Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs, Barcelona, Spain
- Department of Energy Conversion and Storage, Functional Oxides Group, Technical University of Denmark, Fysikvej 310, 233, 2800 Kongens Lyngby, Denmark
| | - Alex Morata
- Department of Advanced Materials for Energy Applications, Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs, Barcelona, Spain
| | - Andrea Cavallaro
- Department of Materials, Imperial College London, London SW7 2AZ, U.K
| | - Maciej O Liedke
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Hemesh Avireddy
- Department of Advanced Materials for Energy Applications, Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs, Barcelona, Spain
| | - Mar Maller
- Department of Advanced Materials for Energy Applications, Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs, Barcelona, Spain
| | - Maik Butterling
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Andreas Wagner
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany
| | - Michel Stchakovsky
- HORIBA Scientific, 14 Boulevard Thomas Gobert, Passage Jobin Yvon, CS 45002-91120 Palaiseau, France
| | - Federico Baiutti
- Department of Advanced Materials for Energy Applications, Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs, Barcelona, Spain
- Department of Materials Chemistry, National Institute of Chemistry, Hajdrihova 19, SI-1000 Ljubljana, Slovenia
| | - Ainara Aguadero
- Department of Materials, Imperial College London, London SW7 2AZ, U.K
- Instituto de Ciencia de Materiales de Madrid, ICMM-CSIC, Sor Juana Ines de la Cruz 3, 28049 Madrid, Spain
| | - Albert Tarancón
- Department of Advanced Materials for Energy Applications, Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 08930 Sant Adrià del Besòs, Barcelona, Spain
- ICREA, Passeig Lluís Companys 23, 08010 Barcelona, Spain
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17
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Ramesh R. Materials for a Sustainable Microelectronics Future: Electric Field Control of Magnetism with Multiferroics. J Indian Inst Sci 2022; 102:489-511. [PMID: 35035127 PMCID: PMC8749116 DOI: 10.1007/s41745-021-00277-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Accepted: 11/23/2021] [Indexed: 11/30/2022]
Abstract
This article is written on behalf of many colleagues, collaborators, and researchers in the field of complex oxides as well as current and former students and postdocs who continue to enable and undertake cutting-edge research in the field of multiferroics, magnetoelectrics, and the pursuit of electric-field control of magnetism. What I present is something that is extremely exciting from both a fundamental science and applications perspective and has the potential to revolutionize our world, particularly from a sustainability perspective. To realize this potential will require numerous new innovations, both in the fundamental science arena as well as translating these scientific discoveries into real applications. Thus, this article will attempt to bridge the gap between fundamental materials physics and the actual manifestations of the physical concepts into real-life applications. I hope this article will help spur more translational research within the broad materials community.
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Affiliation(s)
- R Ramesh
- Department of Physics and Department of Materials Science and Engineering, University of California, Berkeley, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, USA
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18
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Jin C, Zhu Y, Li X, An F, Han W, Liu Q, Hu S, Ji Y, Xu Z, Hu S, Ye M, Zhong G, Gu M, Chen L. Super-Flexible Freestanding BiMnO 3 Membranes with Stable Ferroelectricity and Ferromagnetism. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2102178. [PMID: 34713629 PMCID: PMC8693045 DOI: 10.1002/advs.202102178] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2021] [Revised: 07/19/2021] [Indexed: 06/13/2023]
Abstract
Multiferroic materials with flexibility are expected to make great contributions to flexible electronic applications, such as sensors, memories, and wearable devices. In this work, super-flexible freestanding BiMnO3 membranes with simultaneous ferroelectricity and ferromagnetism are synthesized using water-soluble Sr3 Al2 O6 as the sacrificial buffer layer. The super-flexibility of BiMnO3 membranes is demonstrated by undergoing an ≈180° folding during an in situ bending test, which is consistent with the results of first-principles calculations. The piezoelectric signal under a bending radius of ≈500 µm confirms the stable existence of electric polarization in freestanding BiMnO3 membranes. Moreover, the stable ferromagnetism of freestanding BiMnO3 membranes is demonstrated after 100 times bending cycles with a bending radius of ≈2 mm. 5.1% uniaxial tensile strain is achieved in freestanding BiMnO3 membranes, and the piezoresponse force microscopy (PFM) phase retention behaviors confirm that the ferroelectricity of membranes can survive stably up to the strain of 1.7%. These super-flexible membranes with stable ferroelectricity and ferromagnetism pave ways to the realizations of multifunctional flexible electronics.
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Affiliation(s)
- Cai Jin
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
- School of PhysicsHarbin Institute of TechnologyHarbin150081China
| | - Yuanmin Zhu
- Academy for Advanced Interdisciplinary StudiesSouthern University of Science and TechnologyShenzhen518055China
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055China
| | - Xiaowen Li
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
| | - Feng An
- Shenzhen Key Laboratory of NanobiomechanicsShenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhen518055China
| | - Wenqiao Han
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
| | - Qi Liu
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
| | - Sixia Hu
- Materials Characterization and Preparation CenterSouthern University of Science and TechnologyShenzhen518055China
| | - Yanjiang Ji
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
| | - Zedong Xu
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
| | - Songbai Hu
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
| | - Mao Ye
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
| | - Gaokuo Zhong
- Shenzhen Key Laboratory of NanobiomechanicsShenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhen518055China
| | - Meng Gu
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhen518055China
| | - Lang Chen
- Department of PhysicsSouthern University of Science and TechnologyShenzhen518055China
- Materials Characterization and Preparation CenterSouthern University of Science and TechnologyShenzhen518055China
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19
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Huang J, Zhang D, Liu J, Dou H, Wang H. Double-Exchange Bias Modulation under Horizontal and Perpendicular Field Directions by 3D Nanocomposite Design. ACS APPLIED MATERIALS & INTERFACES 2021; 13:50141-50148. [PMID: 34644494 DOI: 10.1021/acsami.1c14699] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Exchange bias (EB) presents the interfacial coupling between ferromagnetic (FM) and antiferromagnetic (AFM) phases, which could be applied for high-density data storage and magnetic recording. In thin films, the EB effect could be realized in either a FM/AFM multilayer structure or a FM/AFM vertically aligned nanocomposite (VAN) form, which allows the interfacial coupling tuning along the horizontal or perpendicular directions, respectively. Here, to combine the schemes of multilayer and VAN structures, a new 3D nanocomposite has been designed, which is La0.7Sr0.3MnO3 (LSMO)/NiO VAN layers with inserted LSMO or NiO layers. Such a 3D nanocomposite structure provides a great platform to tailor the EB effect along both horizontal and perpendicular directions. Specifically, the sample with a NiO interlayer exhibits the highest EB field (HEB) of 350 Oe and 475 Oe under in-plane and out-of-plane field, respectively. Furthermore, the HEB value and Curie temperature (Tc) can be tuned by different 3D nanostructures. This work demonstrates the double EB modulation with the designed 3D nanostructures as a new route toward advanced magnetic data storage and spintronic devices.
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Affiliation(s)
- Jijie Huang
- School of Materials, Sun Yat-sen University, Guangzhou, Guangdong 510275, China
| | - Di Zhang
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Juncheng Liu
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Hongyi Dou
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Haiyan Wang
- School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
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20
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Lei L, Liu L, Lu X, Mei F, Shen H, Hu X, Yan S, Huang F, Zhu J. Controllable Distribution and Reversible Migration of Charges in BiFeO 3-Based Films on Si Substrates. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43787-43794. [PMID: 34467752 DOI: 10.1021/acsami.1c14060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
In ferroelectric-based integrated devices, there are usually buffer layers between ferroelectric films and semiconductor substrates. Here, Bix%FeO3-δ (x = 95, 100, and 105) (BFOx) films are prepared directly on n-Si substrates by the sol-gel method, and the variation of the hysteresis loops with Bi content and heat treatment is investigated. With the help of the dielectric measurement and the composition analysis, a PN heterojunction is believed to exist at the BFOx/Si interface. The Bi/Fe ratio determines not only the type and concentration of charged defects in the films but also the height of the interface barrier and its binding effect on mobile charges. Furthermore, the distribution and the migration of charges can be regulated reversibly by heat treatment. This work reveals the interaction between ferroelectric films and semiconductor substrates, providing an important reference for the design and application of ferroelectric/semiconductor heterostructures.
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Affiliation(s)
- Lin Lei
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
| | - Lin Liu
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
| | - Xiaomei Lu
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Fang Mei
- Department of Mathematics and Physics, Luoyang Institute of Science and Technology, Luoyang 471023, China
| | - Hui Shen
- School of Information and Electronic Engineering, Shandong Technology and Business University, Yantai 264005, China
| | - Xueli Hu
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
| | - Shuo Yan
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
| | - Fengzhen Huang
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
| | - Jinsong Zhu
- National Laboratory of Solid State Microstructures and Physics School, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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21
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Stebliy ME, Kolesnikov AG, Bazrov MA, Letushev ME, Ognev AV, Davydenko AV, Stebliy EV, Kozlov AG, Wang X, Wan C, Fang C, Zhao M, Han X, Samardak AS. Current-Induced Manipulation of the Exchange Bias in a Pt/Co/NiO Structure. ACS APPLIED MATERIALS & INTERFACES 2021; 13:42258-42265. [PMID: 34427434 DOI: 10.1021/acsami.1c12683] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
An experimental study of the phenomenon of electric current influence on the value and orientation of the exchange bias field (HEB) in the Pt/Co/NiO structure is carried out. Depending on the direction of the magnetization in a ferromagnet (FM) layer and the current pulse amplitude, the value of the HEB field can be changed repeatedly in the range of ±7.5 mT. A few experiments are performed to separate the contributions from two current-induced effects: (i) an injection of the spin current into an antiferromagnet layer (AFM) and (ii) Joule heating. As a result, we conclude that the modification in the HEB field during current pulse transmission in the Pt/Co/NiO structure is due to heating and the low value of Néel temperature (TN = 162 °C). This fact explains the absence of the exchange bias effect on the spin-orbit torque (SOT)-assisted magnetization switching. The most striking observation to emerge from the experimental data analysis is that depending on the initial spin configuration of the domain structure in the FM layer and the current pulse amplitude, the exchange bias can be changed locally. This opens up prospects for creating exchange-coupled FM/AFM structures with dynamically tuned parameters of the exchange bias, which can be used for the development of magnetic memory, neuromorphic, and logic devices based on magnetic nanosystems.
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Affiliation(s)
- Maksim E Stebliy
- School of Natural Sciences, Far Eastern Federal University, Vladivostok 690922, Russia
| | | | - Michail A Bazrov
- School of Natural Sciences, Far Eastern Federal University, Vladivostok 690922, Russia
| | - Michail E Letushev
- School of Natural Sciences, Far Eastern Federal University, Vladivostok 690922, Russia
| | - Alexey V Ognev
- School of Natural Sciences, Far Eastern Federal University, Vladivostok 690922, Russia
| | - Aleksandr V Davydenko
- School of Natural Sciences, Far Eastern Federal University, Vladivostok 690922, Russia
| | - Ekaterina V Stebliy
- School of Natural Sciences, Far Eastern Federal University, Vladivostok 690922, Russia
| | - Aleksei G Kozlov
- School of Natural Sciences, Far Eastern Federal University, Vladivostok 690922, Russia
| | - Xiao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Caihua Wan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Chi Fang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Mingkun Zhao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiufeng Han
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Alexander S Samardak
- School of Natural Sciences, Far Eastern Federal University, Vladivostok 690922, Russia
- National Research South Ural State University, Chelyabinsk 454080, Russia
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22
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Kim H, Je S, Moon K, Choi W, Yang S, Kim C, Tran BX, Hwang C, Hong J. Programmable Dynamics of Exchange-Biased Domain Wall via Spin-Current-Induced Antiferromagnet Switching. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100908. [PMID: 34263557 PMCID: PMC8425944 DOI: 10.1002/advs.202100908] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/05/2021] [Revised: 05/12/2021] [Indexed: 06/13/2023]
Abstract
Magnetic domain wall (DW) motion in perpendicularly magnetized materials is drawing increased attention due to the prospect of new type of information storage devices, such as racetrack memory. To augment the functionalities of DW motion-based devices, it is essential to improve controllability over the DW motion. Other than electric current, which is known to induce unidirectional shifting of a train of DWs, an application of in-plane magnetic field also enables the control of DW dynamics by rotating the DW magnetization and consequently modulating the inherited chiral DW structure. Applying an external bias field, however, is not a viable approach for the miniaturization of the devices as the external field acts globally. Here, the programmable exchange-coupled DW motion in the antiferromagnet (AFM)/ferromagnet (FM) system is demonstrated, where the role of an external in-plane field is replaced by the exchange bias field from AFM layer, enabling the external field-free modulations of DW motions. Interestingly, the direction of the exchange bias field can also be reconfigured by simply injecting spin currents through the device, enabling electrical and programmable operations of the device. Furthermore, the result inspires a prototype DW motion-based device based on the AFM/FM heterostructure, that could be easily integrated in logic devices.
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Affiliation(s)
- Hyun‐Joong Kim
- Quantum Technology InstituteKorea Research Institute of Standards and Science (KRISS)267 Gajeong‐roDaejeon34113Republic of Korea
- Department of Emerging Materials ScienceDaegu Gyeongbuk Institute of Science and Technology (DGIST)333 Techno jungang‐daeroDaegu42988Republic of Korea
| | - Soong‐Geun Je
- Department of PhysicsChonnam National University77 Yongbong‐roGwangju61186Republic of Korea
| | - Kyoung‐Woong Moon
- Quantum Technology InstituteKorea Research Institute of Standards and Science (KRISS)267 Gajeong‐roDaejeon34113Republic of Korea
| | - Won‐Chang Choi
- Department of Emerging Materials ScienceDaegu Gyeongbuk Institute of Science and Technology (DGIST)333 Techno jungang‐daeroDaegu42988Republic of Korea
| | - Seungmo Yang
- Quantum Technology InstituteKorea Research Institute of Standards and Science (KRISS)267 Gajeong‐roDaejeon34113Republic of Korea
| | - Changsoo Kim
- Quantum Technology InstituteKorea Research Institute of Standards and Science (KRISS)267 Gajeong‐roDaejeon34113Republic of Korea
| | - Bao Xuan Tran
- Department of Emerging Materials ScienceDaegu Gyeongbuk Institute of Science and Technology (DGIST)333 Techno jungang‐daeroDaegu42988Republic of Korea
| | - Chanyong Hwang
- Quantum Technology InstituteKorea Research Institute of Standards and Science (KRISS)267 Gajeong‐roDaejeon34113Republic of Korea
| | - Jung‐Il Hong
- Department of Emerging Materials ScienceDaegu Gyeongbuk Institute of Science and Technology (DGIST)333 Techno jungang‐daeroDaegu42988Republic of Korea
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23
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Jin C, Li X, Han W, Liu Q, Hu S, Ji Y, Xu Z, Hu S, Ye M, Gu M, Zhu Y, Chen L. Ferroelectricity and Ferromagnetism Achieved via Adjusting Dimensionality in BiFeO 3/BiMnO 3 Superlattices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:41315-41322. [PMID: 34410105 DOI: 10.1021/acsami.1c11120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Integrating characteristics of materials through constructing artificial superlattices (SLs) has raised extensive attention in multifunctional materials. Here, we report the synthesis of BiFeO3/BiMnO3 SLs with considerable ferroelectric polarizations and tunable magnetic moments. The polarization of BiFeO3/BiMnO3 SLs presents a decent value of 12 μC/cm2, even as the dimensionality of BiFeO3 layers per period is reduced to about five-unit cells when keeping the BiMnO3 layers same. Moreover, it is found that the tunable magnetic moments of SLs are linked intimately to the dimensionality of BiFeO3 layers. Our simulations demonstrate that the superexchange interaction of Fe-O-Mn tends to be antiferromagnetic (AFM) with a lower magnetic domain formation energy rather than ferromagnetic (FM). Therefore, as the dimensionality of BiFeO3 per period is reduced, the AFM superexchange interaction between BiFeO3 and BiMnO3 in the SLs becomes weak, promoting a robust magnetization. This interlayer modulation effect in SLs presents an alluring way to accurately control the multiple order parameters in a multiferroic oxide system.
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Affiliation(s)
- Cai Jin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- School of Physics, Harbin Institute of Technology, Harbin 150081, China
| | - Xiaowen Li
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Wenqiao Han
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qi Liu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Sixia Hu
- Materials Characterization and Preparation Center, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yanjiang Ji
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zedong Xu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Songbai Hu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Mao Ye
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Meng Gu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuanmin Zhu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- School of Materials Science and Engineering, Dongguan University of Technology, Dongguan 523808, China
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
- Materials Characterization and Preparation Center, Southern University of Science and Technology, Shenzhen 518055, China
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24
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Yao Y, Zhan X, Sendeku MG, Yu P, Dajan FT, Zhu C, Li N, Wang J, Wang F, Wang Z, He J. Recent progress on emergent two-dimensional magnets and heterostructures. NANOTECHNOLOGY 2021; 32:472001. [PMID: 34315143 DOI: 10.1088/1361-6528/ac17fd] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2021] [Accepted: 07/26/2021] [Indexed: 06/13/2023]
Abstract
Intrinsic two-dimensional (2D) magnetic materials own strong long-range magnetism while their characteristics of the ultrathin thickness and smooth surface provide an ideal platform for manipulating the magnetic properties at 2D limit. This makes them to be potential candidates in various spintronic applications compared to their corresponding bulk counterparts. The discovery of magnetic ordering in 2D CrI3and Gr2Ge2Te6nanostructures stimulated tremendous research interest in both experimental and theoretical studies on various intrinsic magnets at 2D limit. This review gives a comprehensive overview of the recent progress on the emergent 2D magnets and heterostructures. Firstly, several kinds of typical 2D magnetic materials discovered in the last few years and their fabrication methods are summarized in detail. Secondly, the current strategies for manipulating magnetic properties in 2D materials are further discussed. Then, the recent advances on the construction of representative van der Waals magnetic heterostructures and their respective performance are provided. With the hope of motivating the researchers in this area, we finally offered the challenges and outlook on 2D magnetism.
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Affiliation(s)
- Yuyu Yao
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Sino-Danish Center for Education, Beijing 100049, People's Republic of China
| | - Xueying Zhan
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Marshet Getaye Sendeku
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Peng Yu
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Fekadu Tsegaye Dajan
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Chuanchao Zhu
- Institute for Quantum Information & State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, People's Republic of China
| | - Ningning Li
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Sino-Danish Center for Education, Beijing 100049, People's Republic of China
| | - Junjun Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Feng Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Zhenxing Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jun He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
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25
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Abstract
Electric field control of magnetism is an extremely exciting area of research, from both a fundamental science and an applications perspective and has the potential to revolutionize the world of computing. To realize this will require numerous further innovations, both in the fundamental science arena as well as translating these scientific discoveries into real applications. Thus, this article will attempt to bridge the gap between condensed matter physics and the actual manifestations of the physical concepts into applications. We have attempted to paint a broad-stroke picture of the field, from the macroscale all the way down to the fundamentals of spin–orbit coupling that is a key enabler of the physics discussed. We hope it will help spur more translational research within the broad materials physics community. Needless to say, this article is written on behalf of a large number of colleagues, collaborators and researchers in the field of complex oxides as well as current and former students and postdocs who continue to pursue cutting-edge research in this field.
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Affiliation(s)
- Ramamoorthy Ramesh
- Department of Physics, University of California, Berkeley, CA, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Sasikanth Manipatruni
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Kepler Computing, Portland, OR 97229, USA
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26
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Merbouche H, Boventer I, Haspot V, Fusil S, Garcia V, Gouéré D, Carrétéro C, Vecchiola A, Lebrun R, Bortolotti P, Vila L, Bibes M, Barthélémy A, Anane A. Voltage-Controlled Reconfigurable Magnonic Crystal at the Sub-micrometer Scale. ACS NANO 2021; 15:9775-9781. [PMID: 34013720 DOI: 10.1021/acsnano.1c00499] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Multiferroics offer an elegant means to implement voltage control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nanomagnonics is expected to eventually lead to the large-scale integration of magnonic devices. However, a compact voltage-controlled, on demand reconfigurable magnonic system has yet to be shown. Here, we introduce the combination of multiferroics with ferromagnets in a fully epitaxial heterostructure to achieve such voltage-controlled and reconfigurable magnonic systems. Imprinting a remnant electrical polarization in thin multiferroic BiFeO3 with a periodicity of 500 nm yields a modulation of the effective magnetic field in the micrometer-scale, ferromagnetic La2/3Sr1/3MnO3 magnonic waveguide. We evidence the magnetoelectric coupling by characterizing the spin wave propagation spectrum in this artificial, voltage induced, magnonic crystal and demonstrate the occurrence of a robust magnonic band gap with >20 dB rejection.
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Affiliation(s)
- Hugo Merbouche
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Isabella Boventer
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Victor Haspot
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Stéphane Fusil
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Université d'Evry, Université Paris-Saclay, 91000 Evry, France
| | - Vincent Garcia
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Diane Gouéré
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Cécile Carrétéro
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Aymeric Vecchiola
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Romain Lebrun
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Paolo Bortolotti
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Laurent Vila
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, Spintec, 38000 Grenoble, France
| | - Manuel Bibes
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Agnès Barthélémy
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Abdelmadjid Anane
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
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27
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Mandal AK, Jana A, Chowdhury S, Tiwari A, Choudhary RJ, Phase DM. Mixed Mott-Hubbard and charge transfer nature of 4H-SrMnO 3thin film on Si (100). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:235501. [PMID: 33973533 DOI: 10.1088/1361-648x/abe8a3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2020] [Accepted: 02/22/2021] [Indexed: 06/12/2023]
Abstract
Room temperature electronic structure of polycrystalline 4H-SrMnO3thin film grown on Si (100) substrate has been studied using resonance photo emission spectroscopy and soft x-ray absorption spectroscopy measurements. Presence of charge transfer screen Mn 3dnLfinal state along with the 3dn-1final state at the valence band edge of 4H-SrMnO3thin film confirms that the ground state is strongly mixed between Mn 3dand O 2pstates. The estimated equivalent values of on-site Coulomb interaction energy (U) and O 2pto Mn 3d- charge transfer energy (Δ) (U≈ Δ ≈ 4.8 eV) from the combination of occupied and unoccupied spectra further confirm the intermediate Mott-Hubbard and charge transfer insulator nature of 4H-SrMnO3film. Despite having similar Mn 4+ valence state in 4H-SrMnO3and cubic SrMnO3, 4H phase is observed to reveal much higher band gap ∼1.5 eV than the cubic phase (0.3 eV), which arises due to different MnO6octahedra environment.
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Affiliation(s)
- Arup Kumar Mandal
- UGC-DAE Consortium for Scientific Research, Indore-452001, Madhya Pradesh, India
| | - Anupam Jana
- UGC-DAE Consortium for Scientific Research, Indore-452001, Madhya Pradesh, India
| | - Sourav Chowdhury
- UGC-DAE Consortium for Scientific Research, Indore-452001, Madhya Pradesh, India
| | - Achyut Tiwari
- Indian Institute of Technology (Indian School of Mines), Dhanbad-826004, Jharkhand, India
| | - R J Choudhary
- UGC-DAE Consortium for Scientific Research, Indore-452001, Madhya Pradesh, India
| | - D M Phase
- UGC-DAE Consortium for Scientific Research, Indore-452001, Madhya Pradesh, India
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28
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Liu Y, Xu Z, Qiao K, Shen F, Xiao A, Wang J, Ma T, Hu F, Shen B. Electric field control of magnetism through modulating phase separation in (011)-Nd 0.5Sr 0.5MnO 3/PMN-PT heterostructures. NANOSCALE 2021; 13:8030-8037. [PMID: 33956930 DOI: 10.1039/d1nr00242b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Large and non-volatile electric field control of magnetization is promising to develop memory devices with reduced energy consumption. Herein, we report the electric field control of magnetization with a non-volatile memory effect in an intermediate band Nd0.5Sr0.5MnO3 film grown on a (011)-cut 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) single crystal. Applying an electric field across the ferroelectric PMN-PT increases the magnetization of the Nd0.5Sr0.5MnO3 film along both in-plane [100] and [011[combining macron]] directions. Moreover, the magnetization does not recover to its original state after withdrawal of the electric field at temperatures below 70 K, demonstrating a non-volatile memory effect. Detailed investigation showed that (011)-PMN-PT exhibits an anisotropic in-plane strain due to an electric field-induced rhombohedral to orthorhombic phase transition. This electric field-induced anisotropic strain can dynamically transfer to Nd0.5Sr0.5MnO3 film and modulate the magnetization of the Nd0.5Sr0.5MnO3 film through adjusting its phase balance between ferromagnetic (FM) and charge-orbital ordered antiferromagnetic (COO AFM) phases. The non-volatile memory effect can be ascribed to the competition of thermal energy and energy barriers between the FM and COO AFM phases at low temperatures. This work broadens the knowledge of electric field control of magnetism in the intermediate band-manganite ferromagnetic/ferroelectric multiferroic heterostructures, and may also pave a way for the control of antiferromagnetism and to design antiferromagnet-based memories.
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Affiliation(s)
- Yao Liu
- Frontier Institute of Science and Technology and State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710054, China.
| | - Zhitong Xu
- Frontier Institute of Science and Technology and State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710054, China.
| | - Kaiming Qiao
- Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Feiran Shen
- Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. and Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Andong Xiao
- Frontier Institute of Science and Technology and State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710054, China.
| | - Jing Wang
- Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. and Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Tianyu Ma
- Frontier Institute of Science and Technology and State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710054, China.
| | - Fengxia Hu
- Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. and Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics and State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China. and Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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29
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Ji H, Zhou G, Wang X, Zhang J, Kang P, Xu X. Electric-Field Reversible Switching of the Exchange Spring and Exchange Bias Effect in SrCoO 3-x/La 0.7Sr 0.3MnO 3 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2021; 13:15774-15782. [PMID: 33769029 DOI: 10.1021/acsami.0c22254] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The technique of electrical field to manipulate physicochemical properties of oxide heterostructures has ample potential in electronic and ionitronic devices. SrCoO3-x is a famous "sponge" material displaying topotactic structural phase transition from perovskite (0 ≤ x ≤ 0.25) to brownmillerite (x = 0.5) accompanied by the magnetic phase transition from ferromagnetism to antiferromagnetism, which can be controlled reversibly by electric field via the ionic liquid gating method. Here, the exchange spring effect can be observed at the perovskite SrCoO3-x (P-SCO)/La0.7Sr0.3MnO3 (LSMO) bilayer, while the exchange bias effect is received at the brownmillerite SrCoO2.5 (B-SCO)/LSMO bilayer. The reversible and nonvolatile switching of the exchange spring and exchange bias effect can be achieved in these SCO3-x/LSMO bilayers by utilizing ionic liquid gating to control the annihilation or generation of oxygen vacancies. In addition, the variations in the stacking orders of these SCO3-x/LSMO bilayers are investigated because the previous SCO3-x layer always acts as the cover layer. It is worth noting that LSMO/SCO3-x bilayer magnetization is strongly suppressed when the SCO3-x layer is used as the bottom layer. Combined with the X-ray line dichroism measurements, it is suggested that the bottom SCO3-x layer would induce the spin arrangements in the LSMO layer to have the tendency toward the out-of-plane orientation. This is the reason for the sharp decrease in magnetization of LSMO/SCO3-x bilayers. Our investigations accomplish a reversible control of the exchange coupling transition in all-oxide bilayers and provide the foundation for further electric-field control of magnetic properties.
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Affiliation(s)
- Huihui Ji
- School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, P. R. China
| | - Guowei Zhou
- School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, P. R. China
- Research Institute of Materials Science of Shanxi Normal University & Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Techonology, Linfen 041004, China
| | - Xiaojiao Wang
- School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, P. R. China
| | - Jun Zhang
- School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, P. R. China
| | - Penghua Kang
- School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, P. R. China
| | - Xiaohong Xu
- School of Chemistry and Materials Science, Key Laboratory of Magnetic Molecules and Magnetic Information Materials, Ministry of Education, Shanxi Normal University, Linfen 041004, P. R. China
- Research Institute of Materials Science of Shanxi Normal University & Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Techonology, Linfen 041004, China
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30
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Lei C, Chittari BL, Nomura K, Banerjee N, Jung J, MacDonald AH. Magnetoelectric Response of Antiferromagnetic CrI 3 Bilayers. NANO LETTERS 2021; 21:1948-1954. [PMID: 33600723 DOI: 10.1021/acs.nanolett.0c04242] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We predict that layer antiferromagnetic bilayers formed from van der Waals (vdW) materials with weak interlayer versus intralayer exchange coupling have strong magnetoelectric response that can be detected in dual-gated devices where internal displacement fields and carrier densities can be varied independently. We illustrate this strong temperature-dependent magnetoelectric response in bilayer CrI3 at charge neutrality by calculating the gate voltage-dependent total magnetization through Monte Carlo simulations and mean-field solutions of the anisotropic Heisenberg model informed from density functional theory and experimental data and present a simple model for electrical control of magnetism by electrostatic doping.
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Affiliation(s)
- Chao Lei
- Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Bheema L Chittari
- Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur 741246, West Bengal, India
| | - Kentaro Nomura
- Institute for Materials Research, Tohoku University, Sendai Aoba-ku 980-8577, Japan
| | - Nepal Banerjee
- Department of Physics, University of Seoul, Seoul 02504, Korea
- Department of Smart Cities, University of Seoul, Seoul 02504, Korea
| | - Jeil Jung
- Department of Physics, University of Seoul, Seoul 02504, Korea
- Department of Smart Cities, University of Seoul, Seoul 02504, Korea
| | - Allan H MacDonald
- Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States
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31
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Luo ZD, Yang MM, Liu Y, Alexe M. Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor-Structure Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005620. [PMID: 33577112 DOI: 10.1002/adma.202005620] [Citation(s) in RCA: 38] [Impact Index Per Article: 12.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2020] [Revised: 09/26/2020] [Indexed: 06/12/2023]
Abstract
Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which revolutionary innovations are needed to address fundamental limitations on material and working principle level. 2D semiconductors inherently holding novel properties at the atomic limit show great promise to tackle challenges imposed by traditional bulk semiconductor materials. Synergistic combination of 2D semiconductors with functional ferroelectrics further offers new working principles, and is expected to deliver massively enhanced device performance for existing complementary metal-oxide-semiconductor (CMOS) technologies and add unprecedented applications for next-generation electronics. Herein, recent demonstrations of novel device concepts based on 2D semiconductor/ferroelectric heterostructures are critically reviewed covering their working mechanisms, device construction, applications, and challenges. In particular, emerging opportunities of CMOS-process-compatible 2D semiconductor/ferroelectric transistor structure devices for the development of a rich variety of applications are discussed, including beyond-Boltzmann transistors, nonvolatile memories, neuromorphic devices, and reconfigurable nanodevices such as p-n homojunctions and self-powered photodetectors. It is concluded that 2D semiconductor/ferroelectric heterostructures, as an emergent heterogeneous platform, could drive many more exciting innovations for modern electronics, beyond the capability of ubiquitous silicon systems.
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Affiliation(s)
- Zheng-Dong Luo
- Department of Physics, The University of Warwick, Coventry, CV4 7AL, UK
| | - Ming-Min Yang
- Center for Emergent Matter Science, RIKEN, Wako, Saitama, 351-0198, Japan
| | - Yang Liu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Marin Alexe
- Department of Physics, The University of Warwick, Coventry, CV4 7AL, UK
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32
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Gupta P, Pal D. Spin induced exchange bias and lattice modulation in Nd 1-x Eu x CrO 3. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:135806. [PMID: 33527910 DOI: 10.1088/1361-648x/abda7d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We report the evolution of coupled phonons and exchange bias (EB) in perovskite-type Nd1-x Eu x CrO3 (x = 0.0, 0.05, and 0.10) samples by means of temperature-dependent Raman spectroscopy and dc magnetization measurements. We observed a non-monotonic behavior of the EB field around the temperature T *, which lies between the antiferromagnetic ordering temperature (T N) and spin-reorientation transition temperature (T SR). The temperature dependence of phonon modes related to antistretching and bending of CrO6 octahedra and Nd3+/Eu3+ ion vibration below T N confirms the strong spin-phonon coupling. The T * found from the non-monotonicity of the EB is imprinted with the additional anomaly observed in the low-temperature spin-phonon behavior. The phonon modes and phonon anomaly are also verified using the density functional theory-based calculations.
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Affiliation(s)
- Pragya Gupta
- Department of Physics, Indian Institute of Technology Guwahati, Guwahati, Assam 781039, India
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33
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Gradauskaite E, Meisenheimer P, Müller M, Heron J, Trassin M. Multiferroic heterostructures for spintronics. PHYSICAL SCIENCES REVIEWS 2020. [DOI: 10.1515/psr-2019-0072] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Abstract
AbstractFor next-generation technology, magnetic systems are of interest due to the natural ability to store information and, through spin transport, propagate this information for logic functions. Controlling the magnetization state through currents has proven energy inefficient. Multiferroic thin-film heterostructures, combining ferroelectric and ferromagnetic orders, hold promise for energy efficient electronics. The electric field control of magnetic order is expected to reduce energy dissipation by 2–3 orders of magnitude relative to the current state-of-the-art. The coupling between electrical and magnetic orders in multiferroic and magnetoelectric thin-film heterostructures relies on interfacial coupling though magnetic exchange or mechanical strain and the correlation between domains in adjacent functional ferroic layers. We review the recent developments in electrical control of magnetism through artificial magnetoelectric heterostructures, domain imprint, emergent physics and device paradigms for magnetoelectric logic, neuromorphic devices, and hybrid magnetoelectric/spin-current-based applications. Finally, we conclude with a discussion of experiments that probe the crucial dynamics of the magnetoelectric switching and optical tuning of ferroelectric states towards all-optical control of magnetoelectric switching events.
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Affiliation(s)
- Elzbieta Gradauskaite
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
| | - Peter Meisenheimer
- Department of Materials Science and Engineering , University of Michigan , Ann Arbor , MI 48109 USA
| | - Marvin Müller
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
| | - John Heron
- Department of Materials Science and Engineering , University of Michigan , Ann Arbor , MI 48109 USA
| | - Morgan Trassin
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
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34
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Pradhan DK, Kumari S, Rack PD. Magnetoelectric Composites: Applications, Coupling Mechanisms, and Future Directions. NANOMATERIALS 2020; 10:nano10102072. [PMID: 33092147 PMCID: PMC7589497 DOI: 10.3390/nano10102072] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/09/2020] [Revised: 10/08/2020] [Accepted: 10/12/2020] [Indexed: 12/04/2022]
Abstract
Multiferroic (MF)-magnetoelectric (ME) composites, which integrate magnetic and ferroelectric materials, exhibit a higher operational temperature (above room temperature) and superior (several orders of magnitude) ME coupling when compared to single-phase multiferroic materials. Room temperature control and the switching of magnetic properties via an electric field and electrical properties by a magnetic field has motivated research towards the goal of realizing ultralow power and multifunctional nano (micro) electronic devices. Here, some of the leading applications for magnetoelectric composites are reviewed, and the mechanisms and nature of ME coupling in artificial composite systems are discussed. Ways to enhance the ME coupling and other physical properties are also demonstrated. Finally, emphasis is given to the important open questions and future directions in this field, where new breakthroughs could have a significant impact in transforming scientific discoveries to practical device applications, which can be well-controlled both magnetically and electrically.
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Affiliation(s)
- Dhiren K. Pradhan
- Department of Materials Science & Engineering, University of Tennessee, Knoxville, TN 37996, USA
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
- Correspondence: (D.K.P.); (P.D.R.)
| | - Shalini Kumari
- Department of Materials Science & Engineering, The Pennsylvania State University, University Park, PA 16802, USA;
| | - Philip D. Rack
- Department of Materials Science & Engineering, University of Tennessee, Knoxville, TN 37996, USA
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
- Correspondence: (D.K.P.); (P.D.R.)
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35
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Du EW, Gong SJ, Tang X, Chu J, Rappe AM, Gong C. Ferroelectric Switching of Pure Spin Polarization in Two-Dimensional Electron Gas. NANO LETTERS 2020; 20:7230-7236. [PMID: 32786931 DOI: 10.1021/acs.nanolett.0c02584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional electron gas (2DEG) created at compound interfaces can exhibit a broad range of exotic physical phenomena, including quantum Hall phase, emergent ferromagnetism, and superconductivity. Although electron spin plays key roles in these phenomena, the fundamental understanding and application prospects of such emergent interfacial states have been largely impeded by the lack of purely spin-polarized 2DEG. In this work, by first-principles calculations of the multiferroic superlattice GeTe/MnTe, we find the ferroelectric polarization of GeTe is concurrent with the half-metallic 2DEG at interfaces. Remarkably, the pure spin polarization of the 2DEG can be created and annihilated by polarizing and depolarizing the ferroelectrics and can be switched (between pure spin-up and pure spin-down) by flipping the ferroelectric polarization. Given the electric-field amplification effect of ferroelectric electronics, we envision multiferroic superlattices could open up new opportunities for low-power, high-efficiency spintronic devices such as spin field-effect transistors.
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Affiliation(s)
- Er-Wei Du
- Key Laboratory of Polar Materials and Devices (MOE), Department of Optoelectronics, East China Normal University, Shanghai 200241, China
| | - Shi-Jing Gong
- Key Laboratory of Polar Materials and Devices (MOE), Department of Optoelectronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Xiaodong Tang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Optoelectronics, East China Normal University, Shanghai 200241, China
| | - Junhao Chu
- Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Cheng Gong
- Department of Electrical and Computer Engineering and Quantum Technology Center, University of Maryland, College Park, Maryland 20742, United States
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36
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Dong W, Peters JJP, Rusu D, Staniforth M, Brunier AE, Lloyd-Hughes J, Sanchez AM, Alexe M. Emergent Antipolar Phase in BiFeO 3-La 0.7Sr 0.3MnO 3 Superlattice. NANO LETTERS 2020; 20:6045-6050. [PMID: 32643949 DOI: 10.1021/acs.nanolett.0c02063] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ferroelectric-paraelectric superlattices show emerging new states, such as polar vortices, through the interplay and different energy scales of various thermodynamic constraints. By introducing magnetic coupling at BiFeO3-La0.7Sr0.3MnO3 interfaces epitaxially grown on SrTiO3 substrate, we find, for the first time in thin films, a sub-nanometer thick lamella-like BiFeO3. The emergent phase is characterized by an arrangement of a two unit cell thick lamella-like structure featuring antiparallel polarization, resulting an antiferroelectric-like structure typically associated with a morphotropic phase transition. The antipolar phase is embedded within a nominal R3c structure and is independent of the BiFeO3 thickness (4-30 unit cells). Moreover, the superlattice structure with the morphotropic phase demonstrates azimuth-independent second harmonic generation responses, indicating a change of overall symmetry mediated by a delicate spatial distribution of the emergent phase. This work enriches the understanding of a metastable state manipulated by thermodynamic constraints by lattice strain and magnetic coupling.
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Affiliation(s)
- Wen Dong
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Jonathan J P Peters
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Dorin Rusu
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Michael Staniforth
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Alan E Brunier
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - James Lloyd-Hughes
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Ana M Sanchez
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
| | - Marin Alexe
- Department of Physics, University of Warwick, Gibbet Hill Road, Coventry CV4 7AL, United Kingdom
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37
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Anisotropic and nonlinear magnetodielectric effects in orthoferrite ErFeO 3 single crystals. Sci Rep 2020; 10:11825. [PMID: 32678242 PMCID: PMC7367349 DOI: 10.1038/s41598-020-68800-x] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2020] [Accepted: 06/24/2020] [Indexed: 11/20/2022] Open
Abstract
In rare-earth orthoferrites, strongly correlated order parameters have been thoroughly investigated, which aims to find multiple functionalities such as multiferroic or magnetoelectric properties. We have discovered highly anisotropic and nonlinear magnetodielectric effects from detailed measurements of magnetoelectric properties in single-crystalline orthoferrite, ErFeO3. Isothermal dielectric constant varies in shapes and signs depending on the relative orientations between the external electric and magnetic fields, which may be ascribed to the spin-phonon couplings. In addition, a dielectric constant with both electric and magnetic fields along the c axis exhibits two symmetric sharp anomalies, which are closely relevant to the spin-flop transition, below the ordering temperature of Er3+ spins, TEr = 3.4 K. We speculate that the magnetostriction from the exchange couplings between Er3+ and Fe3+ magnetic moments would be responsible for this relationship between electric and magnetic properties. Our results present significant characteristics of the orthoferrite compounds and offer a crucial guide for exploring suitable materials for magnetoelectric functional applications.
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38
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Xu M, Li M, Khanal P, Habiboglu A, Insana B, Xiong Y, Peterson T, Myers JC, Ortega D, Qu H, Chien CL, Zhang W, Wang JP, Wang WG. Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions. PHYSICAL REVIEW LETTERS 2020; 124:187701. [PMID: 32441982 DOI: 10.1103/physrevlett.124.187701] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2019] [Revised: 03/12/2020] [Accepted: 04/02/2020] [Indexed: 06/11/2023]
Abstract
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)O_{x} formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly magnetized CoFeB allows sensitive detection of the exchange bias. We find that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.
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Affiliation(s)
- Meng Xu
- Department of Physics, University of Arizona, Tucson, Arizona 85721, USA
| | - Mingen Li
- Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
| | - Pravin Khanal
- Department of Physics, University of Arizona, Tucson, Arizona 85721, USA
| | - Ali Habiboglu
- Department of Physics, University of Arizona, Tucson, Arizona 85721, USA
| | - Blake Insana
- Department of Physics, University of Arizona, Tucson, Arizona 85721, USA
| | - Yuzan Xiong
- Department of Physics, Oakland University, Rochester, Michigan 48309, USA
- Department of Electrical and Computer Engineering, Oakland University, Rochester, Michigan 48309, USA
| | - Thomas Peterson
- Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street Southeast, Minneapolis, Minnesota 55455, USA
| | - Jason C Myers
- Characterization Facility, University of Minnesota, 100 Union Street Southeast, Minneapolis, Minnesota 55455, USA
| | - Deborah Ortega
- Department of Physics, University of Arizona, Tucson, Arizona 85721, USA
| | - Hongwei Qu
- Department of Electrical and Computer Engineering, Oakland University, Rochester, Michigan 48309, USA
| | - C L Chien
- Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland 21218, USA
| | - Wei Zhang
- Department of Physics, Oakland University, Rochester, Michigan 48309, USA
| | - Jian-Ping Wang
- Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street Southeast, Minneapolis, Minnesota 55455, USA
| | - W G Wang
- Department of Physics, University of Arizona, Tucson, Arizona 85721, USA
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39
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Yin S, Xiong C, Chen C, Zhang X. Electric control of magnetization in an amorphous Co-Fe-Ta-B-O film by resistive switching. Phys Chem Chem Phys 2020; 22:8672-8678. [PMID: 32270850 DOI: 10.1039/d0cp00824a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Electric control of magnetism by resistive switching is a simple and efficient approach to manipulate magnetism. However, the mechanism of magnetism manipulation by resistive switching is not well understood. Detailed characterization was performed to investigate the mechanism of magnetization changes with resistance state. We achieved a reversible and nonvolatile control of magnetization in a Co-Fe-Ta-B-O film at room temperature by resistive switching. It is found that a higher saturation magnetization could be attributed to the formation of a conducting filament rich in the reductive state of iron when the device is switched to low resistance. This work might provide a new insight to achieve magnetoelectric coupling.
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Affiliation(s)
- Siqi Yin
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China and National Center for Electron Microscopy in Beijing, Tsinghua University, Beijing 100084, China
| | - Chengyue Xiong
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China and National Center for Electron Microscopy in Beijing, Tsinghua University, Beijing 100084, China
| | - Cheng Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China and National Center for Electron Microscopy in Beijing, Tsinghua University, Beijing 100084, China
| | - Xiaozhong Zhang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China and National Center for Electron Microscopy in Beijing, Tsinghua University, Beijing 100084, China and Center for Brian-Inspired Computing Research (CBICR), Tsinghua University, Beijing, 100084, China.
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40
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Wang N, Luo X, Han L, Zhang Z, Zhang R, Olin H, Yang Y. Structure, Performance, and Application of BiFeO 3 Nanomaterials. NANO-MICRO LETTERS 2020; 12:81. [PMID: 34138095 PMCID: PMC7770668 DOI: 10.1007/s40820-020-00420-6] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2020] [Accepted: 02/28/2020] [Indexed: 05/27/2023]
Abstract
Multiferroic nanomaterials have attracted great interest due to simultaneous two or more properties such as ferroelectricity, ferromagnetism, and ferroelasticity, which can promise a broad application in multifunctional, low-power consumption, environmentally friendly devices. Bismuth ferrite (BiFeO3, BFO) exhibits both (anti)ferromagnetic and ferroelectric properties at room temperature. Thus, it has played an increasingly important role in multiferroic system. In this review, we systematically discussed the developments of BFO nanomaterials including morphology, structures, properties, and potential applications in multiferroic devices with novel functions. Even the opportunities and challenges were all analyzed and summarized. We hope this review can act as an updating and encourage more researchers to push on the development of BFO nanomaterials in the future.
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Affiliation(s)
- Nan Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xudong Luo
- School of Materials and Metallurgy, University of Science and Technology Liaoning, 185 Qianshan Zhong Road, Anshan, 114051, Liaoning, People's Republic of China
| | - Lu Han
- School of Materials and Metallurgy, University of Science and Technology Liaoning, 185 Qianshan Zhong Road, Anshan, 114051, Liaoning, People's Republic of China.
| | - Zhiqiang Zhang
- School of Chemical Engineering, University of Science and Technology Liaoning, 185 Qianshan Zhong Road, Anshan, 114051, Liaoning, People's Republic of China
| | - Renyun Zhang
- Department of Natural Sciences, Mid Sweden University, Holmgatan 10, 85170, Sundsvall, Sweden
| | - Håkan Olin
- Department of Natural Sciences, Mid Sweden University, Holmgatan 10, 85170, Sundsvall, Sweden
| | - Ya Yang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China.
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, Guangxi, People's Republic of China.
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41
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Abstract
Most digital information today is encoded in the magnetization of ferromagnetic domains. The demand for ever-increasing storage space fuels continuous research for energy-efficient manipulation of magnetism at smaller and smaller length scales. Writing a bit is usually achieved by rotating the magnetization of domains of the magnetic medium, which relies on effective magnetic fields. An alternative approach is to change the magnetic state directly by acting on the interaction between magnetic moments. Correlated oxides are ideal materials for this because the effects of a small external control parameter are amplified by the electronic correlations. Here, we present a radical method for reversible, light-induced tuning of ferromagnetism at room temperature using a halide perovskite/oxide perovskite heterostructure. We demonstrate that photoinduced charge carriers from the [Formula: see text] photovoltaic perovskite efficiently dope the thin [Formula: see text] film and decrease the magnetization of the ferromagnetic state, allowing rapid rewriting of the magnetic bit. This manipulation could be accomplished at room temperature; hence this opens avenues for magnetooptical memory devices.
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42
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Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics. Sci Rep 2020; 10:3583. [PMID: 32107393 PMCID: PMC7046697 DOI: 10.1038/s41598-020-58592-5] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2019] [Accepted: 01/06/2020] [Indexed: 11/22/2022] Open
Abstract
A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity (~500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment (~200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3 validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after ~1010 switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields.
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43
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Yin L, Mi W. Progress in BiFeO 3-based heterostructures: materials, properties and applications. NANOSCALE 2020; 12:477-523. [PMID: 31850428 DOI: 10.1039/c9nr08800h] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.
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Affiliation(s)
- Li Yin
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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44
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Yadava K, Gallo G, Bette S, Mulijanto CE, Karothu DP, Park IH, Medishetty R, Naumov P, Dinnebier RE, Vittal JJ. Extraordinary anisotropic thermal expansion in photosalient crystals. IUCRJ 2020; 7:83-89. [PMID: 31949907 PMCID: PMC6949593 DOI: 10.1107/s2052252519014581] [Citation(s) in RCA: 26] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2019] [Accepted: 10/27/2019] [Indexed: 06/01/2023]
Abstract
Although a plethora of metal complexes have been characterized, those having multifunctional properties are very rare. This article reports three isotypical complexes, namely [Cu(benzoate)L 2], where L = 4-styryl-pyridine (4spy) (1), 2'-fluoro-4-styryl-pyridine (2F-4spy) (2) and 3'-fluoro-4-styryl-pyridine (3F-4spy) (3), which show photosalient behavior (photoinduced crystal mobility) while they undergo [2+2] cyclo-addition. These crystals also exhibit anisotropic thermal expansion when heated from room temperature to 200°C. The overall thermal expansion of the crystals is impressive, with the largest volumetric thermal expansion coefficients for 1, 2 and 3 of 241.8, 233.1 and 285.7 × 10-6 K-1, respectively, values that are comparable to only a handful of other reported materials known to undergo colossal thermal expansion. As a result of the expansion, their single crystals occasionally move by rolling. Altogether, these materials exhibit unusual and hitherto untapped solid-state properties.
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Affiliation(s)
- Khushboo Yadava
- Department of Chemistry, National University of Singapore, S8-05-03, 3 Science Drive 3, 117543, Singapore
| | - Gianpiero Gallo
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D70569 Stuttgart Germany
- Department of Chemistry and Biology ‘A. Zambelli’, University of Salerno, Via Giovanni Paolo II, 132, Fisciano (SA) 84084, Italy
| | - Sebastian Bette
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D70569 Stuttgart Germany
| | - Caroline Evania Mulijanto
- Department of Chemistry, National University of Singapore, S8-05-03, 3 Science Drive 3, 117543, Singapore
| | | | - In-Hyeok Park
- Department of Chemistry, National University of Singapore, S8-05-03, 3 Science Drive 3, 117543, Singapore
| | - Raghavender Medishetty
- Department of Chemistry, National University of Singapore, S8-05-03, 3 Science Drive 3, 117543, Singapore
| | - Panče Naumov
- New York University Abu Dhabi, 129188, Abu Dhabi, United Arab Emirates
| | - Robert E. Dinnebier
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D70569 Stuttgart Germany
| | - Jagadese J. Vittal
- Department of Chemistry, National University of Singapore, S8-05-03, 3 Science Drive 3, 117543, Singapore
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45
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On the first evidence of exchange-bias feature in magnetically contrasted consolidates made from CoFe 2O 4-CoO core-shell nanoparticles. Sci Rep 2019; 9:19468. [PMID: 31857610 PMCID: PMC6923415 DOI: 10.1038/s41598-019-55649-y] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2019] [Accepted: 11/26/2019] [Indexed: 12/02/2022] Open
Abstract
Hetero-nanostructures based on magnetic contrast oxides have been prepared as highly dense nanoconsolidates. Cobalt ferrite-cobalt oxide core-shell type nanoparticles (NPs) were synthesized by seed mediated growth in polyol and subsequently consolidated by Spark Plasma Sintering (SPS) at 500 °C for a few minutes while applying a uniaxial pressure of 100 MPa. It is interesting to note that the exchange bias feature observed in the core-shell NPs is reproduced in their ceramic counterparts, or even attenuated. A systematic structural characterization was then carried out to elucidate the decrease in the exchange magnetic field, involving mainly advanced X-ray diffraction, zero-field and in-field 57Fe Mössbauer spectrometry, magnetic measurements and electron microscopy.
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Li L, Xie L, Pan X. Real-time studies of ferroelectric domain switching: a review. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2019; 82:126502. [PMID: 31185460 DOI: 10.1088/1361-6633/ab28de] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.
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Affiliation(s)
- Linze Li
- Department of Materials Science and Engineering, University of California, Irvine, CA 92697, United States of America
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Strkalj N, Gradauskaite E, Nordlander J, Trassin M. Design and Manipulation of Ferroic Domains in Complex Oxide Heterostructures. MATERIALS (BASEL, SWITZERLAND) 2019; 12:E3108. [PMID: 31554210 PMCID: PMC6803956 DOI: 10.3390/ma12193108] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/28/2019] [Revised: 09/16/2019] [Accepted: 09/18/2019] [Indexed: 02/06/2023]
Abstract
The current burst of device concepts based on nanoscale domain-control in magnetically and electrically ordered systems motivates us to review the recent development in the design of domain engineered oxide heterostructures. The improved ability to design and control advanced ferroic domain architectures came hand in hand with major advances in investigation capacity of nanoscale ferroic states. The new avenues offered by prototypical multiferroic materials, in which electric and magnetic orders coexist, are expanding beyond the canonical low-energy-consuming electrical control of a net magnetization. Domain pattern inversion, for instance, holds promises of increased functionalities. In this review, we first describe the recent development in the creation of controlled ferroelectric and multiferroic domain architectures in thin films and multilayers. We then present techniques for probing the domain state with a particular focus on non-invasive tools allowing the determination of buried ferroic states. Finally, we discuss the switching events and their domain analysis, providing critical insight into the evolution of device concepts involving multiferroic thin films and heterostructures.
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Affiliation(s)
- Nives Strkalj
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland.
| | - Elzbieta Gradauskaite
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
| | - Johanna Nordlander
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
| | - Morgan Trassin
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland.
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48
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Vermeulen BF, Ciubotaru F, Popovici MI, Swerts J, Couet S, Radu IP, Stancu A, Temst K, Groeseneken G, Adelmann C, Martens KM. Ferroelectric Control of Magnetism in Ultrathin HfO 2\Co\Pt Layers. ACS APPLIED MATERIALS & INTERFACES 2019; 11:34385-34393. [PMID: 31449744 DOI: 10.1021/acsami.9b07973] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The recent demonstration of ferroelectricity in ultrathin HfO2 has kickstarted a new wave of research into this material. HfO2 in the orthorhombic phase can be considered the first and only truly nanoscale ferroelectric material that is compatible with silicon-based nanoelectronics applications. In this article, we demonstrate the ferroelectric control of the magnetic properties of cobalt deposited on ultrathin aluminum-doped, atomic layer deposition-grown HfO2 (tHfO2 = 6.5 nm). The ferroelectric effect is shown to control the shape of the magnetic hysteresis, quantified here by the magnetic switching energy. Furthermore, the magnetic properties such as the remanence are modulated by up to 41%. We show that this modulation does not only correlate with the charge accumulation at the interface but also shows an additional component associated with the ferroelectric polarization switching. An in-depth analysis using first order reversal curves shows that the coercive and interaction field distributions of cobalt can be modulated up to, respectively, 5.8% and 10.5% with the ferroelectric polarization reversal.
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Affiliation(s)
- Bart F Vermeulen
- Laboratorium voor Halfgeleiderfysica , KU Leuven , 3001 Leuven , Belgium
- IMEC , Kapeldreef 75 , 3001 Leuven , Belgium
| | | | | | | | | | | | - Alexandru Stancu
- Faculty of Physics , Alexandru Ioan Cuza University of Iasi , Iasi 700506 , Romania
| | - Kristiaan Temst
- Instituut voor Kern-en Stralingsfysica , KU Leuven , 3001 Leuven , Belgium
| | - Guido Groeseneken
- IMEC , Kapeldreef 75 , 3001 Leuven , Belgium
- Department of Electrical Engineering , KU Leuven , 3001 Leuven , Belgium
| | | | - Koen M Martens
- Laboratorium voor Halfgeleiderfysica , KU Leuven , 3001 Leuven , Belgium
- IMEC , Kapeldreef 75 , 3001 Leuven , Belgium
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49
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Xu M, Yan JM, Guo L, Wang H, Xu ZX, Yan MY, Lu YL, Gao GY, Li XG, Luo HS, Chai Y, Zheng RK. Nonvolatile Control of the Electronic Properties of In 2-xCr xO 3 Semiconductor Films by Ferroelectric Polarization Charge. ACS APPLIED MATERIALS & INTERFACES 2019; 11:32449-32459. [PMID: 31405273 DOI: 10.1021/acsami.9b07967] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A series of Cr-doped In2-xCrxO3 (ICO) semiconductor thin films were epitaxially grown on (111)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-0.29PT) single-crystal substrates by the pulsed laser deposition. Upon the application of an electric field to the PMN-0.29PT substrate along the thickness direction, we realized in situ, reversible, and nonvolatile control of the electronic properties and Fermi level of the films, which are manifested by abundant physical phenomena such as the n-type to p-type transformation, metal-semiconductor transition, metal-insulator transition, crossover of the magnetoresistance (MR) from negative to positive, and a large nonvolatile on-and-off ratio of 5.5 × 104% at room temperature. We also strictly disclose that both the sign and the magnitude of MR are determined by the electron carrier density of ICO films, which could modify the s-d exchange interaction and weak localization effect. Our results demonstrate that the ferroelectric gating approach using PMN-PT can be utilized to gain deeper insight into the carrier-density-related electronic properties of In2O3-based semiconductors and provide a simple and energy efficient way to construct multifunctional devices which can utilize the unique properties of composite materials.
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Affiliation(s)
- Meng Xu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
- Center of Materials Science and Optoelectronics Engineering , University of Chinese Academy of Sciences , Beijing 100049 , China
| | - Jian-Min Yan
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Lei Guo
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Hui Wang
- School of Materials Science and Engineering and Jiangxi Key Laboratory for Two-Dimensional Materials and Devices , Nanchang University , Nanchang 330031 , China
| | - Zhi-Xue Xu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Ming-Yuan Yan
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Yun-Long Lu
- Faculty of Electrical Engineering and Computer Science , Ningbo University , Ningbo 315211 , China
| | - Guan-Yin Gao
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures , University of Science and Technology of China , Hefei 230026 , China
| | - Xiao-Guang Li
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Physics, and Collaborative Innovation Center of Advanced Microstructures , University of Science and Technology of China , Hefei 230026 , China
| | - Hao-Su Luo
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
| | - Yang Chai
- Department of Applied Physics , The Hong Kong Polytechnic University , Kowloon , Hong Kong , China
| | - Ren-Kui Zheng
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics , Chinese Academy of Sciences , Shanghai 200050 , China
- School of Materials Science and Engineering and Jiangxi Key Laboratory for Two-Dimensional Materials and Devices , Nanchang University , Nanchang 330031 , China
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50
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Mehmood N, Song X, Tian G, Hou Z, Chen D, Fan Z, Qin M, Gao X, Liu JM. Electric field driven multi-state magnetization switching in triangular nanomagnets on piezoelectric substrate. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:295802. [PMID: 30978710 DOI: 10.1088/1361-648x/ab18f0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Electric field control of magnetic state switching mediated by magneto-elastic coupling in multiferroic heterostructures consisting of shape anisotropic magnetostrictive nanomagnets elastically coupled with a piezoelectric substrate has a promising potential for next generation magneto-elastic memory and logic devices. In this work, by using micromagnetic simulation, we showed that localized strain-induced magnetic anisotropy caused by the electric field-induced piezostrain combined with strong multifold shape anisotropy effect can be used for achieving a multistate switching of magnetization in a triangular soft magnetic nano-island on a piezoelectric substrate. A piezostrain-induced uniaxial magnetic anisotropy pulse applied in specific directions switches the magnetization within the triangular nanomagnet by an angle of 60° from the initial state. The relation between critical magnitude of the strain pulse for the switching of the magnetization states and geometric parameters (thickness and lateral size) within the triangular nanomagnets has been worked out. Complete cycles of clockwise as well as counter-clockwise switching of the magnetization states of the triangular nanomagnet have been achieved by a series of sequential switching with different directions of applied strain-induced magnetic anisotropy. This local gating scheme-based multistate switching can be used for electric field-induced ultra-fast, deterministic and reversible magnetization switching which are the key challenges in designing of the magnetoelastic and/or magnetoelectric memory and logic devices.
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Affiliation(s)
- Nasir Mehmood
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
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