Titanium dxy ferromagnetism at the LaAlO3/SrTiO3 interface

Electron holography observation of individual ferrimagnetic lattice planes

Atomic-scale observations of a specific local area would be considerably beneficial when exploring new fundamental materials and devices. The development of hardware-type aberration correction1,2 in electron microscopy has enabled local structural observations with atomic resolution3-5 as well as chemical and vibration analysis6-8. In magnetic imaging, however, atomic-level spin configurations are analysed by electron energy-loss spectroscopy by placing samples in strong magnetic fields9-11, which destroy the nature of the magnetic ordering in the samples. Although magnetic-field-free observations can visualize the intrinsic magnetic fields of an antiferromagnet by unit-cell averaging12, directly observing the magnetic field of an individual atomic layer of a non-uniform structure is challenging. Here we report that the magnetic fields of an individual lattice plane inside materials with a non-uniform structure can be observed under magnetic-field-free conditions by electron holography with a hardware-type aberration corrector assisted by post-digital aberration correction. The magnetic phases of the net magnetic moments of (111) lattice planes formed by opposite spin orderings between Fe3+ and Mo5+ in a ferrimagnetic double-perovskite oxide (Ba2FeMoO6) were successfully observed. This result opens the door to direct observations of the magnetic lattice in local areas, such as interfaces and grain boundaries, in many materials and devices.

Coexistence of Ferromagnetism and Superconductivity at KTaO3 Heterointerfaces

The coexistence of superconductivity and ferromagnetism is a long-standing issue in superconductivity due to the antagonistic nature of these two ordered states. Experimentally identifying and characterizing novel heterointerface superconductors that coexist with magnetism presents significant challenges. Here, we report the observation of two-dimensional long-range ferromagnetic order in a KTaO3 heterointerface superconductor, showing the coexistence of superconductivity and ferromagnetism. Remarkably, our direct current superconducting quantum interference device measurements reveal an in-plane magnetization hysteresis loop persisting above room temperature. Moreover, first-principles calculations and X-ray magnetic circular dichroism measurements provide decisive insights into the origin of the observed robust ferromagnetism, attributing it to oxygen vacancies that localize electrons in nearby Ta 5d states. Our findings suggest KTaO3 heterointerfaces as time-reversal symmetry breaking superconductors, injecting fresh momentum into the exploration of the intricate interplay between superconductivity and magnetism enhanced by the strong spin-orbit coupling inherent to the heavy Ta in 5d orbitals.

Tunable 2D Electron- and 2D Hole States Observed at Fe/SrTiO3 Interfaces

Oxide electronics provide the key concepts and materials for enhancing silicon-based semiconductor technologies with novel functionalities. However, a basic but key property of semiconductor devices still needs to be unveiled in its oxidic counterparts: the ability to set or even switch between two types of carriers-either negatively (n) charged electrons or positively (p) charged holes. Here, direct evidence for individually emerging n- or p-type 2D band dispersions in STO-based heterostructures is provided using resonant photoelectron spectroscopy. The key to tuning the carrier character is the oxidation state of an adjacent Fe-based interface layer: For Fe and FeO, hole bands emerge in the empty bandgap region of STO due to hybridization of Ti- and Fe- derived states across the interface, while for Fe3O4 overlayers, an 2D electron system is formed. Unexpected oxygen vacancy characteristics arise for the hole-type interfaces, which as of yet had been exclusively assigned to the emergence of 2DESs. In general, this finding opens up the possibility to straightforwardly switch the type of conductivity at STO interfaces by the oxidation state of a redox overlayer. This will extend the spectrum of phenomena in oxide electronics, including the realization of combined n/p-type all-oxide transistors or logic gates.

Origin of Interfacial Orbital Reconstruction in Perovskite Superlattices

The competition between on-site electronic correlation and local crystal field stands out as a captivating topic in research. However, its physical ramifications often get overshadowed by influences of strong periodic potential and orbital hybridization. The present study reveals this competition may become more pronounced or even dominant in two-dimensional systems, driven by the combined effects of dimensional confinement and orbital anisotropy. This leads to electronic orbital reconstruction in certain perovskite superlattices or thin films. To explore the emerging physics, we investigate the interfacial orbital disorder-order transition with an effective Hamiltonian and how to modulate this transition through strains.

High-Temperature Ferroic Glassy States in SrTiO_{3}-Based Thin Films

Disordered ferroics hold great promise for next-generation magnetoelectric devices because their lack of symmetry constraints implies negligible hysteresis with low energy costs. However, the transition temperature and the magnitude of polarization and magnetization are still too low to meet application requirements. Here, taking the prototype perovskite of SrTiO_{3} as an instance, we realize a coexisting spin and dipole reentrant glass states in SrTiO_{3} homoepitaxial films via manipulation of local symmetry. Room-temperature saturation magnetization and spontaneous polarization reach ∼ 10  emu/cm^{3} and ∼ 25  μC/cm^{2}, respectively, with high transition temperatures (101 K and 236 K for spin and dipole glass temperatures and 556 K and 1100 K for Curie temperatures, respectively). Our atomic-scale investigation points out an underlying mechanism, where the Ti/O-defective unit cells break the local translational and orbital symmetry to drive the formation of unusual slush states. This study advances our understanding of the nature of the intricate couplings of ferroic glasses. Our approach could be applied to numerous perovskite oxides for the simultaneous control of the local magnetic and polar orderings and for the exploration of the underlying physics.

Light-Induced Giant Rashba Spin-Orbit Coupling at Superconducting KTaO3 (110) Heterointerfaces

The 2D electron system (2DES) at the KTaO₃ surface or heterointerface with 5d orbitals hosts extraordinary physical properties, including a stronger Rashba spin-orbit coupling (RSOC), higher superconducting transition temperature, and potential of topological superconductivity. Herein, a huge enhancement of RSOC under light illumination achieved at a superconducting amorphous-Hf_0.5 Zr_0.5 O₂ /KTaO₃ (110) heterointerfaces is reported. The superconducting transition is observed with T_c = 0.62 K and the temperature-dependent upper critical field reveals the interaction between spin-orbit scattering and superconductivity. A strong RSOC with B_so = 1.9 T is revealed by weak antilocalization in the normal state, which undergoes sevenfold enhancement under light illumination. Furthermore, RSOC strength develops a dome-shaped dependence of carrier density with the maximum of B_so = 12.6 T achieved near the Lifshitz transition point n_c ≈ 4.1 × 10¹³ cm^-2 . The highly tunable giant RSOC at KTaO₃ (110)-based superconducting interfaces show great potential for spintronics.

Interface-Driven Multiferroicity in Cubic BaTiO3-SrTiO3 Nanocomposites

Perovskite multiferroics have drawn significant attention in the development of next-generation multifunctional electronic devices. However, the majority of existing multiferroics exhibit ferroelectric and ferromagnetic orderings only at low temperatures. Although interface engineering in complex oxide thin films has triggered many exotic room-temperature functionalities, the desired coupling of charge, spin, orbital and lattice degrees of freedom often imposes stringent requirements on deposition conditions, layer thickness and crystal orientation, greatly hindering their cost-effective large-scale applications. Herein, we report an interface-driven multiferroicity in low-cost and environmentally friendly bulk polycrystalline material, namely cubic BaTiO₃-SrTiO₃ nanocomposites which were fabricated through a simple, high-throughput solid-state reaction route. Interface reconstruction in the nanocomposites can be readily controlled by the processing conditions. Coexistence of room-temperature ferromagnetism and ferroelectricity, accompanying a robust magnetoelectric coupling in the nanocomposites, was confirmed both experimentally and theoretically. Our study explores the 'hidden treasure at the interface' by creating a playground in bulk perovskite oxides, enabling a broad range of applications that are challenging with thin films, such as low-power-consumption large-volume memory and magneto-optic spatial light modulator.

Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors

We report the synthesis and optoelectronic properties of high phase-purity (>94 mol %) bulk polycrystals of KCoO₂-type layered nitrides AETMN₂ (AE = Sr, Ba; and TM = Ti, Zr, Hf), which are expected to exhibit unique electron transport properties originating from their natural two-dimensional (2D) electronic structure, but high-purity intrinsic samples have yet been reported. The bulks were synthesized using a solid-state reaction between AENH and TMN precursors with NaN₃ to achieve high N chemical potential during the reaction. The AETMN₂ bulks are n-type semiconductors with optical band gaps of 1.63 eV for SrTiN₂, 1.97 eV for BaZrN₂, and 2.17 eV for BaHfN₂. SrTiN₂ and BaZrN₂ bulks show degenerated electron conduction due to the natural high-density electron doping and paramagnetic behavior in all of the temperature ranges examined, while such unintentional carrier generation is largely suppressed in BaHfN₂, which exhibits nondegenerated electron conduction. The BaHfN₂ sample also exhibits weak ferromagnetic behavior at temperatures lower than 35 K. Density functional theory calculations suggest that the high-density electron carriers in SrTiN₂ come from oxygen impurity substitution at the N site (O_N) acting as a shallow donor even if the high-N chemical potential synthesis conditions are employed. On the other hand, the formation energy of O_N becomes larger in BaHfN₂ because of the stronger TM-N chemical bonds. Present results demonstrate that the easiness of impurity incorporation is designed by density functional calculations to produce a more intrinsic semiconductor in wider chemical conditions, opening a way to cultivating novel functional materials that are sensitive to atmospheric impurities and defects.

Catalytic Performance and Near-Surface X-ray Characterization of Titanium Hydride Electrodes for the Electrochemical Nitrate Reduction Reaction

The electrochemical nitrate reduction reaction (NO₃RR) on titanium introduces significant surface reconstruction and forms titanium hydride (TiH_x, 0 < x ≤ 2). With ex situ grazing-incidence X-ray diffraction (GIXRD) and X-ray absorption spectroscopy (XAS), we demonstrated near-surface TiH₂ enrichment with increasing NO₃RR applied potential and duration. This quantitative relationship facilitated electrochemical treatment of Ti to form TiH₂/Ti electrodes for use in NO₃RR, thereby decoupling hydride formation from NO₃RR performance. A wide range of NO₃RR activity and selectivity on TiH₂/Ti electrodes between -0.4 and -1.0 V_RHE was observed and analyzed with density functional theory (DFT) calculations on TiH₂(111). This work underscores the importance of relating NO₃RR performance with near-surface electrode structure to advance catalyst design and operation.

Origin of Magnetization in Silica-coated Fe3O4 Nanoparticles Revealed by Soft X-ray Magnetic Circular Dichroism

Abstract

Magnetite (Fe₃O₄) nanoparticles (NPs) and SiO₂-coated Fe₃O₄ nanoparticles have successfully been synthesized using co-precipitation and modified Stöber methods, respectively. The samples were characterized using X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, high-resolution transmission electron microscopy (HRTEM), vibrating sample magnetometer (VSM) techniques, X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). XRD and FTIR data confirmed the structural configuration of a single-phase Fe₃O₄ and the successful formation of SiO₂-coated Fe₃O₄ NPs. XRD also confirmed that we have succeeded to synthesize nano-meter size of Fe₃O₄ NPs. HRTEM images showed the increasing thickness of SiO₂-coated Fe₃O₄ with the addition of the Tetraethyl Orthosilicate (TEOS). Room temperature VSM analysis showed the magnetic behaviour of Fe₃O₄ and its variations that occurred after SiO₂ coating. The magnetic behaviour is further authenticated by XAS spectra analysis which cleared about the existence of SiO₂ shells that have transformed the crystal as well as the local structures of the magnetite NPs. We have performed XMCD measurements, which is a powerful element-specific technique to find out the origin of magnetization in SiO₂-coated Fe₃O₄ NPs, that verified a decrease in magnetization with increasing thickness of the SiO₂ coating.

Graphical Abstract

Magnetite (Fe₃O₄) nanoparticles (NPs) and SiO₂-coated Fe₃O₄ nanoparticles have successfully been synthesized using co-precipitation and modified Stöber methods, respectively. The samples were characterized using X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, high-resolution transmission electron microscopy (HRTEM), vibrating sample magnetometer (VSM) techniques, X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). XRD and FTIR data confirmed the structural configuration of a single-phase Fe₃O₄ and the successful formation of SiO₂-coated Fe₃O₄ NPs. XRD also confirmed that we have succeeded to synthesize nano-meter size of Fe₃O₄ NPs. HRTEM images showed the increasing thickness of SiO₂-coated Fe₃O₄ with the addition of the Tetraethyl Orthosilicate (TEOS). Room temperature VSM analysis showed the magnetic behaviour of Fe₃O₄ and its variations that occurred after SiO₂ coating. The magnetic behaviour is further authenticated by XAS spectra analysis which cleared about the existence of SiO₂ shells that have transformed the crystal as well as the local structures of the magnetite NPs. We have performed XMCD measurements, which is a powerful element-specific technique to find out the origin of magnetization in SiO₂-coated Fe₃O₄ NPs, that verified a decrease in magnetization with increasing thickness of the SiO₂ coating.

In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO₃ thin films. Theoretical calculations predict the key role of the BaTiO₃/PrScO₃ [Formula: see text] substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.

Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO3/SrTiO3interface

We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO₃/SrTiO₃interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo effect at low-temperature, and switches the negative magnetoresistance into the positive one. A large increase in the density of high-mobility carriers after illumination leads to quantum oscillations in the magnetoresistance originating from the Landau quantization. The carrier density (∼2 × 10¹² cm^-2) and effective mass (∼1.7m_e) estimated from the oscillations suggest that the high-mobility electrons occupy thed_xz/yzsubbands of Ti:t_2gorbital extending deep within the conducting sheet of SrTiO₃. Our results demonstrate that the illumination which induces additional carriers at the interface can pave the way to control the Kondo-like scattering and study the quantum transport in the complex oxide heterostructures.

Defect engineering in perovskite oxide thin films

Perovskite oxide thin films are a category of multifunctional materials that have intriguing electrical, magnetic, and photovoltaic properties that can be harnessed combinatorially in future microelectronic devices. However, the inevitable existence of defects in perovskites, regardless of the materials' processing conditions, plays a significant role in their functional properties, which could be either detrimental or beneficial, depending on the exact chemical nature of these defects. As such, defect engineering is an important research area in perovskite thin films that aims at understanding the chemical nature of the defects, from which the physical properties of materials can be more precisely manipulated. Here, we review the common defects in perovskite oxide thin films, which include point defects, dopants, domains and domain walls. The factors that impact the appearance and existence of defects and the corresponding mechanisms are also discussed. While summarizing our previous work, the state-of-the-art in the field from other groups has also been discussed. Most of the defects exist as defect dipoles that affect the oxidation states of relevant ions and induce anomalous behaviors, such as ferroelectricity in otherwise non-ferroelectric thin films, as well as enhanced electrical conductivity in insulators. Furthermore, the couplings between defect dipoles and other degrees of freedom including epitaxial strains and interfaces also provide new strategies to modulate the functional properties of perovskite thin films. Particularly, the coupling between defects and domain wall motion can be regarded as a universal tool to modulate the electric and magnetic properties of thin films of perovskite oxides. It is our hope that this review could promote defect engineering as a general regulation strategy to embellish the functional properties of perovskite oxide thin films.

Ion Substitution Effect on Defect Formation in Two-Dimensional Transition Metal Nitride Semiconductors, AETiN2 (AE = Ca, Sr, and Ba)

A layered semiconductor, SrTiN₂, has an interesting crystal structure as a two-dimensional (2D) electron system embedded in a three-dimensional bulk periodic structure because it has alternate stacking of a SrN blocking layer and a TiN conduction layer, in which the Ti 3d_xy orbital forms the conduction band minimum (CBM) similar to the SrTiO₃-based thin-film heterostructure. However, SrTiN₂ has been reported to exhibit nearly degenerate conduction, but we reported that it would be due to the easy formation of nitrogen vacancies and oxygen impurities from air. In this paper, we extend the materials to family compounds, alkaline earth (AE) ion-substituted, AETiN₂ (AE = Ca, Sr, and Ba), and investigated how we can suppress the defect formation by (hybrid) density functional theory calculations. All AETiN₂ compounds possess thermodynamic stability in the wide nitrogen (N) chemical potential window. Especially, CaTiN₂ is the most stable even against N-poor conditions. Unintentional carrier generation occurs due to the nitrogen vacancies (V_N), oxygen substitution (O_N), and hydrogen anion substitution (H_N) at the nitrogen sites. The V_N and H_N impurities can be suppressed under N-moderate and N-rich conditions. The O_N defect is easily formed in SrTiN₂ and also in BaTiN₂ under N-rich conditions, but its formation can be suppressed in CaTiN₂. Present results suggest that high-purity CaTiN₂ can be obtained under wider N chemical conditions, which would lead to the realization of the novel functional properties originating from Ti 3d_xy 2D bands embedded in the bulk crystal structure.

Activation Strategies of Perovskite-Type Structure for Applications in Oxygen-Related Electrocatalysts

The oxygen-related electrochemical process, including the oxygen evolution reaction and oxygen reduction reaction, is usually a kinetically sluggish reaction and thus dominates the whole efficiency of energy storage and conversion devices. Owing to the dominant role of the oxygen-related electrochemical process in the development of electrochemical energy, an abundance of oxygen-related electrocatalysts is discovered. Among them, perovskite-type materials with flexible crystal and electronic structures have been researched for a long time. However, most perovskite materials still show low intrinsic activity, which highlights the importance of activation strategies for perovskite-type structures to improve their intrinsic activity. In this review, the recent progress of the activation strategies for perovskite-type structures is summarized and their related applications in oxygen-related electrocatalysis reactions, including electrochemistry water splitting, metal-air batteries, and solid oxide fuel cells are discussed. Furthermore, the existing challenges and the future perspectives for the designing of ideal perovskite-type structure catalysts are proposed and discussed.

Reversible magnetism transition at ferroelectric oxide heterointerface

Oxide heterointerface is a platform to create unprecedented two-dimensional electron gas, superconductivity and ferromagnetism, arising from a polar discontinuity at the interface. In particular, the ability to tune these intriguing effects paves a way to elucidate their fundamental physics and to develop novel electronic/magnetic devices. In this work, we report for the first time that a ferroelectric polarization screening at SrTiO₃/PbTiO₃ interface is able to drive an electronic construction of Ti atom, giving rise to room-temperature ferromagnetism. Surprisingly, such ferromagnetism can be switched to antiferromagnetism by applying a magnetic field, which is reversible. A coupling of itinerant electrons with local moments at interfacial Ti 3d orbital was proposed to explain the magnetism. The localization of the itinerant electrons under a magnetic field is responsible for the suppression of magnetism. These findings provide new insights into interfacial magnetism and their control by magnetic field relevant interfacial electrons promising for device applications.

Spectral weight reduction of two-dimensional electron gases at oxide surfaces across the ferroelectric transition

The discovery of a two-dimensional electron gas (2DEG) at the \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {LaAlO}_3/\hbox {SrTiO}_3$$\end{document}LaAlO3/SrTiO3 interface has set a new platform for all-oxide electronics which could potentially exhibit the interplay among charge, spin, orbital, superconductivity, ferromagnetism and ferroelectricity. In this work, by using angle-resolved photoemission spectroscopy and conductivity measurement, we found the reduction of 2DEGs and the changes of the conductivity nature of some ferroelectric oxides including insulating Nb-lightly-substituted \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {KTaO}_3$$\end{document}KTaO3, \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {BaTiO}_3$$\end{document}BaTiO3 (BTO) and (Ca,Zr)-doped BTO across paraelectric-ferroelectric transition. We propose that these behaviours could be due to the increase of space-charge screening potential at the 2DEG/ferroelectric regions which is a result of the realignment of ferroelectric polarisation upon light irradiation. This finding suggests an opportunity for controlling the 2DEG at a bare oxide surface (instead of interfacial system) by using both light and ferroelectricity.

The emergence of magnetic ordering at complex oxide interfaces tuned by defects

Complex oxides show extreme sensitivity to structural distortions and defects, and the intricate balance of competing interactions which emerge at atomically defined interfaces may give rise to unexpected physics. In the interfaces of non-magnetic complex oxides, one of the most intriguing properties is the emergence of magnetism which is sensitive to chemical defects. Particularly, it is unclear which defects are responsible for the emergent magnetic interfaces. Here, we show direct and clear experimental evidence, supported by theoretical explanation, that the B-site cation stoichiometry is crucial for the creation and control of magnetism at the interface between non-magnetic ABO₃-perovskite oxides, LaAlO₃ and SrTiO₃. We find that consecutive defect formation, driven by atomic charge compensation, establishes the formation of robust perpendicular magnetic moments at the interface. Our observations propose a route to tune these emerging magnetoelectric structures, which are strongly coupled at the polar-nonpolar complex oxide interfaces.

Ferroelectric Exchange Bias Affects Interfacial Electronic States

In polar oxide interfaces phenomena such as superconductivity, magnetism, 1D conductivity, and quantum Hall states can emerge at the polar discontinuity. Combining controllable ferroelectricity at such interfaces can affect the superconducting properties and sheds light on the mutual effects between the polar oxide and the ferroelectric oxide. Here, the interface between the polar oxide LaAlO₃ and the ferroelectric Ca-doped SrTiO₃ is studied by means of electrical transport combined with local imaging of the current flow with the use of scanning a superconducting quantum interference device (SQUID). Anomalous behavior of the interface resistivity is observed at low temperatures. The scanning SQUID maps of the current flow suggest that this behavior originates from an intrinsic bias induced by the polar LaAlO₃ layer. Such intrinsic bias combined with ferroelectricity can constrain the possible structural domain tiling near the interface. The use of this intrinsic bias is recommended as a method of controlling and tuning the initial state of ferroelectric materials by the design of the polar structure. The hysteretic dependence of the normal and the superconducting state properties on gate voltage can be utilized in multifaceted controllable memory devices.

Long-Range Magnetic Order in Oxide Quantum Wells Hosting Two-Dimensional Electron Gases

To incorporate spintronics functionalities into two-dimensional devices, it is strongly desired to get two-dimensional electron gases (2DEGs) with high spin polarization. Unfortunately, the magnetic characteristics of the typical 2DEG at the LaAlO₃/SrTiO₃ interface are very weak due to the nonmagnetic character of SrTiO₃ and LaAlO₃. While most of the previous works focused on perovskite oxides, here, we extended the exploration for magnetic 2DEG beyond the scope of perovskite combinations, composing 2DEG with SrTiO₃ and NaCl-structured EuO that owns a large saturation magnetization and a fairly high Curie temperature. We obtained the 2DEGs that show long-range magnetic order and thus unusual behaviors marked by isotropic butterfly shaped magnetoresistance and remarkable anomalous Hall effect. We found evidence for the presence of more conductive domain walls than elsewhere in the oxide layer where the 2DEG resides. More than that, a relation between interfacial magnetism and carrier density is established. On this basis, the intermediate magnetic states between short-range and long-range ordered states can be achieved. The present work provides guidance for the design of high-performance magnetic 2DEGs.

Revealing the Photocharge-Transfer Mechanism at Manganite-Buffered LaAlO3/SrTiO3 Interfaces by Giant Photoresponse

The photoinduced phase transition at complex oxides remains one of the very important issues because of the emergent physics and potential applications. In particular, the mechanism of charge transfer at interfaces under irradiation is challenging. Herein, the photoinduced properties of manganite-buffered LaAlO₃/SrTiO₃ interfaces with different thicknesses of the buffer layer are systematically investigated. The giant photoresponse is observed, and its relative change in resistance is about 6.24 × 10⁶% at T = 20 K for the sample with a buffer layer thickness of 4.8 nm. Moreover, the transition temperature is enhanced by increasing the thickness of the buffer layer. More importantly, the dead layer effect at the interfaces has been suppressed by using light. All these results are attributed to the charge transfer because of the octahedral tilting at low temperatures and provide a new kind of oxide-based optical devices, such as ultraviolet detectors. This piece of work will pave the way toward two-dimensional electron gas-based optoelectronic devices.

Planar Hall effect and anisotropic magnetoresistance in polar-polar interface of LaVO3-KTaO3 with strong spin-orbit coupling

Among the perovskite oxide family, KTaO₃ (KTO) has recently attracted considerable interest as a possible system for the realization of the Rashba effect. In this work, we report a novel conducting interface by placing KTO with another insulator, LaVO₃ (LVO) and report planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) measurements. This interface exhibits a signature of strong spin-orbit coupling. Our experimental observations of two fold AMR and PHE at low magnetic fields (B) is similar to those obtained for topological systems and can be intuitively understood using a phenomenological theory for a Rashba spin-split system. Our experimental data show a B² dependence of AMR and PHE at low magnetic fields that could also be explained based on our model. At high fields (~8 T), we see a two fold to four fold transition in the AMR that could not be explained using only Rashba spin-split energy spectra.

Two dimensional electron gas (2DEG) at oxide interfaces is promising in modern electronic devices. Here, Wadehra et al. realize 2DEG at a novel interface composed of LaVO₃ and KTaO₃, where strong spin-orbit coupling and relativistic nature of the electrons in the 2DEG, leading to anisotropic magnetoresistance and planar Hall effect.

Controllable Ferromagnetism in Super-tetragonal PbTiO3 through Strain Engineering

The coupling strain in nanoscale systems can achieve control of the physical properties in functional materials, such as ferromagnets, ferroelectrics, and superconductors. Here, we directly demonstrate the atomic-scale structure of super-tetragonal PbTiO₃ nanocomposite epitaxial thin films, including the extraordinary coupling of strain transition and the existence of the oxygen vacancies. Large strain gradients, both longitudinal and transverse (∼3 × 10⁷ m^-1), have been observed. The original non-magnetic ferroelectric composites notably evoke ferromagnetic properties, derived from the combination of Ti³⁺ and oxygen vacancies. The saturation ferromagnetic moment can be controlled by the strain of both the interphase and substrate, optimized to a high value of ∼55 emu/cc in 10-nm thick nanocomposite epitaxial thin films on the LaAlO₃ substrate. Strain engineering provides a route to explore multiferroic systems in conventional non-magnetic ferroelectric oxides and to create functional data storage devices from both ferroelectrics and ferromagnetics.

Electron Trapping Mechanism in LaAlO_{3}/SrTiO_{3} Heterostructures

In LaAlO_{3}/SrTiO_{3} heterostructures, a still poorly understood phenomenon is that of electron trapping in back-gating experiments. Here, by combining magnetotransport measurements and self-consistent Schrödinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. The amount of trapped electrons decays exponentially away from the interface. However, contrary to earlier observations, we find that the Fermi level remains well within the quantum well. The enhanced trapping of electrons induced by the gate voltage can therefore not be explained by a thermal escape mechanism. Further gate sweeping experiments strengthen that conclusion. We propose a new mechanism which involves the electromigration and clustering of oxygen vacancies in SrTiO_{3} and argue that such electron trapping is a universal phenomenon in SrTiO_{3}-based two-dimensional electron systems.

Interface Engineered Room-Temperature Ferromagnetic Insulating State in Ultrathin Manganite Films

Ultrathin epitaxial films of ferromagnetic insulators (FMIs) with Curie temperatures near room temperature are critically needed for use in dissipationless quantum computation and spintronic devices. However, such materials are extremely rare. Here, a room-temperature FMI is achieved in ultrathin La0.9Ba0.1MnO3 films grown on SrTiO3 substrates via an interface proximity effect. Detailed scanning transmission electron microscopy images clearly demonstrate that MnO6 octahedral rotations in La0.9Ba0.1MnO3 close to the interface are strongly suppressed. As determined from in situ X-ray photoemission spectroscopy, O K-edge X-ray absorption spectroscopy, and density functional theory, the realization of the FMI state arises from a reduction of Mn eg bandwidth caused by the quenched MnO6 octahedral rotations. The emerging FMI state in La0.9Ba0.1MnO3 together with necessary coherent interface achieved with the perovskite substrate gives very high potential for future high performance electronic devices.

Intrinsic 2D Ferromagnetism in V5Se8 Epitaxial Thin Films

The discoveries of intrinsic ferromagnetism in atomically thin van der Waals crystals have opened a new research field enabling fundamental studies on magnetism at two-dimensional (2D) limit as well as development of magnetic van der Waals heterostructures. Currently, a variety of 2D ferromagnetism has been explored mainly by mechanically exfoliating "originally ferromagnetic (FM)" van der Waals crystals, while a bottom-up approach by thin-film growth technique has demonstrated emergent 2D ferromagnetism in a variety of "originally non-FM" van der Waals materials. Here we demonstrate that V₅Se₈ epitaxial thin films grown by molecular-beam epitaxy exhibit emergent 2D ferromagnetism with intrinsic spin polarization of the V 3d electrons despite that the bulk counterpart is "originally antiferromagnetic". Moreover, thickness-dependence measurements reveal that this newly developed 2D ferromagnet could be classified as an itinerant 2D Heisenberg ferromagnet with weak magnetic anisotropy, broadening a lineup of 2D magnets to those potentially beneficial for future spintronics applications.

Atomic-Scale Control of Magnetism at the Titanite-Manganite Interfaces

Complex oxide thin-film heterostructures often exhibit magnetic properties different from those known for bulk constituents. This is due to the altered local structural and electronic environment at the interfaces, which affects the exchange coupling and magnetic ordering. The emergent magnetism at oxide interfaces can be controlled by ferroelectric polarization and has a strong effect on spin-dependent transport properties of oxide heterostructures, including magnetic and ferroelectric tunnel junctions. Here, using prototype La_2/3Sr_1/3MnO₃/BaTiO₃ heterostructures, we demonstrate that ferroelectric polarization of BaTiO₃ controls the orbital hybridization and magnetism at heterointerfaces. We observe changes in the enhanced orbital occupancy and significant charge redistribution across the heterointerfaces, affecting the spin and orbital magnetic moments of the interfacial Mn and Ti atoms. Importantly, we find that the exchange coupling between Mn and Ti atoms across the interface is tuned by ferroelectric polarization from ferromagnetic to antiferromagnetic. Our findings provide a viable route to electrically control complex magnetic configurations at artificial multiferroic interfaces, taking a step toward low-power spintronics.

First Observation of Ferroelectricity in ∼1 nm Ultrathin Semiconducting BaTiO3 Films

The requirements of multifunctionality in thin-film systems have led to the discovery of unique physical properties and degrees of freedom, which exist only in film forms. With progress in growth techniques, one can decrease the film thickness to the scale of a few nanometers (∼nm), where its unique physical properties are still pronounced. Among advanced ultrathin film systems, ferroelectrics have generated tremendous interest. As a prototype ferroelectric, the electrical properties of BaTiO₃ (BTO) films have been extensively studied, and it has been theoretically predicted that ferroelectricity sustains down to ∼nm thick films. However, efforts toward determining the minimum thickness for ferroelectric films have been hindered by practical issues surrounding large leakage currents. In this study, we used ∼nm thick BTO films, exhibiting semiconducting characteristics, grown on a LaAlO₃/SrTiO₃ (LAO/STO) heterostructure. In particular, we utilized two-dimensional electron gas at the LAO/STO heterointerface as the bottom electrode in these capacitor junctions. We demonstrate that the BTO film exhibits ferroelectricity at room temperature, even when it is only ∼2 unit-cells thick, and the total thickness of the capacitor junction can be reduced to less than ∼4 nm. Observation of ferroelectricity in ultrathin semiconducting films and the resulting shrunken capacitor thickness will expand the applicability of ferroelectrics in the next generation of functional devices.

Interface Engineering and Emergent Phenomena in Oxide Heterostructures

Complex oxide interfaces have mesmerized the scientific community in the last decade due to the possibility of creating tunable novel multifunctionalities, which are possible owing to the strong interaction among charge, spin, orbital, and structural degrees of freedom. Artificial interfacial modifications, which include defects, formal polarization, structural symmetry breaking, and interlayer interaction, have led to novel properties in various complex oxide heterostructures. These emergent phenomena not only serve as a platform for investigating strong electronic correlations in low-dimensional systems but also provide potentials for exploring next-generation electronic devices with high functionality. Herein, some recently developed strategies in engineering functional oxide interfaces and their emergent properties are reviewed.

High-Mobility Spin-Polarized Two-Dimensional Electron Gases at EuO/KTaO_{3} Interfaces

Two-dimensional electron gases (2DEGs) at oxide interfaces, which provide unique playgrounds for emergent phenomena, have attracted increasing attention in recent years. While most of the previous works focused on the 2DEGs at LaAlO_{3}/SrTiO_{3} interfaces, here we report on a new kind of 2DEGs formed between a magnetic insulator EuO and a high-k perovskite KTaO_{3}. The 2DEGs are not only highly conducting, with a maximal Hall mobility of 111.6  cm^{2}/V s at 2 K, but also well spin polarized, showing strongly hysteretic magnetoresistance up to 25 K and well-defined anomalous Hall effect up to 70 K. Moreover, unambiguous correspondences between the hysteretic behaviors of 2DEGs and the EuO layer are captured, suggesting the proximity effect of the latter on the former. This is confirmed by the results of density-functional theory calculations: Through interlayer exchange, EuO drives the neighboring TaO_{2} layer into a ferromagnetic state. The present work opens new avenues for the exploration for high performance spin-polarized 2DEGs at oxide interfaces.

Quantum Confinement in Oxide Heterostructures: Room-Temperature Intersubband Absorption in SrTiO3/LaAlO3 Multiple Quantum Wells

The Si-compatibility of perovskite heterostructures offers the intriguing possibility of producing oxide-based quantum well (QW) optoelectronic devices for use in Si photonics. While the SrTiO₃/LaAlO₃ (STO/LAO) system has been studied extensively in the hopes of using the interfacial two-dimensional electron gas in Si-integrated electronics, the potential to exploit its giant 2.4 eV conduction band offset in oxide-based QW optoelectronic devices has so far been largely ignored. Here, we demonstrate room-temperature intersubband absorption in STO/LAO QW heterostructures at energies on the order of hundreds of meV, including at energies approaching the critically important telecom wavelength of 1.55 μm. We demonstrate the ability to control the absorption energy by changing the width of the STO well layers by a single unit cell and present theory showing good agreement with experiment. A detailed structural and chemical analysis of the samples via scanning transmission electron microscopy and electron energy loss spectroscopy is presented. This work represents an important proof-of-concept for the use of transition metal oxide QWs in Si-compatible optoelectronic devices.

Tuning Solvated Electrons by Polar-Nonpolar Oxide Heterostructure

Solvated electron states at the oxide/aqueous interface represent the lowest energy charge-transfer pathways, thereby playing an important role in photocatalysis and electronic device applications. However, their energies are usually higher than the conduction band minimum (CBM), which makes the solvated electrons difficult to utilize in charge-transfer processes. Thus it is essential to stabilize the energy of the solvated electron states. Taking LaAlO₃/SrTiO₃ (LAO/STO) oxide heterostructure with H₂O-adsorbed monolayer as a prototypical system, we show using DFT and ab initio time-dependent nonadiabatic molecular dynamics simulation that the energy and dynamics of solvated electrons can be tuned by the electric field in the polar-nonpolar oxide heterostructure. In particular, for LAO/STO with p-type interface, the CBM is contributed by the solvated electron state when LAO is thicker than four unit cells. Furthermore, the solvated electron band minimum can be partially occupied when LAO is thicker than eight unit cells. We propose that the tunability of solvated electron states can be achieved on polar-nonpolar oxide heterostructure surfaces as well as on ferroelectric oxides, which is important for charge and proton transfer at oxide/aqueous interfaces.

Large Enhancement of 2D Electron Gases Mobility Induced by Interfacial Localized Electron Screening Effect

The interactions between delocalized and localized charges play important roles in correlated electron systems. Here, using a combination of transport measurements, spectroscopic ellipsometry (SE), and X-ray absorption spectroscopy (XAS) supported by theoretical calculations, we reveal the important role of interfacial localized charges and their screening effects in determining the mobility of (La_0.3 Sr_0.7 )(Al_0.65 Ta_0.35 )O₃ /SrTiO₃ (LSAT/SrTiO₃ ) interfaces. When the LSAT layer thickness reaches the critical value of 5 uc, the insulating interface abruptly becomes conducting, accompanied by the appearance of a new midgap state. This midgap state emerges at ≈1 eV below the Ti t_2g band and shows a strong character of Ti 3d_xy - O 2p hybridization. Increasing the LSAT layer from 5 to 18 uc, the number of localized charges increases, resulting in an enhanced screening effect and higher mobile electron mobility. This observation contradicts the traditional semiconductor interface where the localized charges always suppress the carrier mobility. These results demonstrate a new strategy to probe localized charges and mobile electrons in correlated electronic systems and highlight the important role of screening effects from localized charges in improving the mobile electron mobility at complex oxide interfaces.

Magnetism Control by Doping in LaAlO3/SrTiO3 Heterointerfaces

Magnetic two-dimensional electron gases at the oxide interfaces are always one of the key issues in spintronics, giving rise to intriguing magnetotransport properties. However, reports about magnetic two-dimensional electron gases remain elusive. Here, we obtain the magnetic order of LaAlO₃/SrTiO₃ systems by introducing magnetic dopants at the La site. The transport properties with a characteristic of metallic behavior at the interfaces are investigated. More significantly, magnetic-doped samples exhibit obvious magnetic hysteresis loops and the mobility is enhanced. Meanwhile, the photoresponsive experiments are realized by irradiating all samples with a 360 nm light. Compared to magnetism, the effects of dopants on photoresponsive and relaxation properties are negligible because the behavior originates from SrTiO₃ substrates. This work paves a way for revealing and better controlling the magnetic properties of oxide heterointerfaces.

Tuning Interfacial Magnetic Ordering via Polarization Control in Ferroelectric SrTiO3/PbTiO3 Heterostructure

The electromagnetic properties at the interface of heterostructure are sensitive to the interfacial crystal structure and external field. For example, the two-dimensional magnetic states at the interface of LaAlO₃/SrTiO₃ are discovered and can further be controlled by electric field. Here, we study two types of heterostructures, TiO₂/PbTiO₃ and SrTiO₃/PbTiO₃, using first-principle electronic structure calculations. We find that the ferroelectric polarization discontinuity at the interface leads to partially occupied Ti 3d states and the magnetic moments. The magnitude of the magnetic moments and the ground-state magnetic coupling are sensitive to the polarization intensity of PbTiO₃. As the ferroelectric polarization of PbTiO₃ increases, the two heterostructures show different magnetic ordering that strongly depends on the electron occupation of the Ti t_2g orbitals. For the TiO₂/PbTiO₃ interface, the magnetic moments are mostly contributed by degenerated d _yz/d _xz orbitals of interfacial Ti atoms and the neighboring interfacial Ti atoms form ferromagnetic coupling. For SrTiO₃/PbTiO₃ interface, the interfacial magnetic moments are mainly contributed by occupied d _xy orbital because of the increased polarization intensity, and as the electron occupation increases, there exists a transition of the magnetic coupling between neighboring Ti atoms from ferromagnetism to antiferromagnetism via the superexchange interaction. Our study suggests that manipulating the polarization intensity is one effective way to control interfacial magnetic ordering in the perovskite oxide heterostructures.

Discovery of a magnetic conductive interface in PbZr0.2Ti0.8O3 /SrTiO3 heterostructures

Emergent physical properties often arise at interfaces of complex oxide heterostructures due to the interplay between various degrees of freedom, especially those with polar discontinuities. It is desirable to explore if these structures may generate pure and controllable spin currents, which are needed to attain unmatched performance and energy efficiency in the next-generation spintronic devices. Here we report the emergence of a spin-polarized two-dimensional electron gas (SP-2DEG) at the interface of two insulators, SrTiO₃ and PbZr_0.2Ti_0.8O₃. This SP-2DEG is strongly localized at the interfacial Ti atoms, due to the interplay between Coulomb interaction and band bending, and can be tuned by the ferroelectric polarization. Our findings open a door for engineering ferroelectric/insulator interfaces to create tunable ferroic orders for magnetoelectric device applications and provide opportunities for designing multiferroic materials in heterostructures.

Two-dimensional electron gases that form in some complex oxide heterostructures may have useful functional behavior due to the interaction of the parent materials. Here the authors show that PZT/STO interfaces can host a spin-polarized electron gas, even though the bulk materials are nonmagnetic.

Physics of SrTiO3-based heterostructures and nanostructures: a review

This review provides a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructures. The intended audience is researchers who are working in the field of oxides, but also those with different backgrounds (e.g., semiconductor nanostructures). After reviewing the relevant properties of SrTiO3 itself, we will then discuss the basics of SrTiO3-based heterostructures, how they can be grown, and how devices are typically fabricated. Next, we will cover the physics of these heterostructures, including their phase diagram and coupling between the various degrees of freedom. Finally, we will review the rich landscape of quantum transport phenomena, as well as the devices that elicit them.

Magnetic field observations in CoFeB/Ta layers with 0.67-nm resolution by electron holography

Nanometre-scale magnetic field distributions in materials such as those at oxide interfaces, in thin layers of spintronics devices, and at boundaries in magnets have become important research targets in materials science and applied physics. Electron holography has advantages in nanometric magnetic field observations, and the realization of aberration correctors has improved its spatial resolution. Here we show the subnanometre magnetic field observations inside a sample at 0.67-nm resolution achieved by an aberration-corrected 1.2-MV holography electron microscope with a pulse magnetization system. A magnetization reduction due to intermixing in a CoFeB/Ta multilayer is analyzed by observing magnetic field and electrostatic potential distributions simultaneously. Our results demonstrate that high-voltage electron holography can be widely applied to pin-point magnetization analysis with structural and composition information in physics, chemistry, and materials science.

Angle-resolved photoemission spectroscopy studies of metallic surface and interface states of oxide insulators

Over the last decade, conducting states embedded in insulating transition metal oxides (TMOs) have served as gateways to discovering and probing surprising phenomena that can emerge in complex oxides, while also opening opportunities for engineering advanced devices. These states are commonly realized at thin film interfaces, such as the well-known case of LaAlO3 (LAO) grown on SrTiO3 (STO). In recent years, the use of angle-resolved photoemission spectroscopy (ARPES) to investigate the k-space electronic structure of such materials led to the discovery that metallic states can also be formed on the bare surfaces of certain TMOs. In this topical review, we report on recent studies of low-dimensional metallic states confined at insulating oxide surfaces and interfaces as seen from the perspective of ARPES, which provides a direct view of the occupied band structure. While offering a fairly broad survey of progress in the field, we draw particular attention to STO, whose surface is so far the best-studied, and whose electronic structure is probably of the most immediate interest, given the ubiquitous use of STO substrates as the basis for conducting oxide interfaces. The ARPES studies provide crucial insights into the electronic band structure, orbital character, dimensionality/confinement, spin structure, and collective excitations in STO surfaces and related oxide surface/interface systems. The obtained knowledge increases our understanding of these complex materials and gives new perspectives on how to manipulate their properties.

Electron Accumulation and Emergent Magnetism in LaMnO_{3}/SrTiO_{3} Heterostructures

Emergent phenomena at polar-nonpolar oxide interfaces have been studied intensely in pursuit of next-generation oxide electronics and spintronics. Here we report the disentanglement of critical thicknesses for electron reconstruction and the emergence of ferromagnetism in polar-mismatched LaMnO_{3}/SrTiO_{3} (001) heterostructures. Using a combination of element-specific x-ray absorption spectroscopy and dichroism, and first-principles calculations, interfacial electron accumulation, and ferromagnetism have been observed within the polar, antiferromagnetic insulator LaMnO_{3}. Our results show that the critical thickness for the onset of electron accumulation is as thin as 2 unit cells (UC), significantly thinner than the observed critical thickness for ferromagnetism of 5 UC. The absence of ferromagnetism below 5 UC is likely induced by electron overaccumulation. In turn, by controlling the doping of the LaMnO_{3}, we are able to neutralize the excessive electrons from the polar mismatch in ultrathin LaMnO_{3} films and thus enable ferromagnetism in films as thin as 3 UC, extending the limits of our ability to synthesize and tailor emergent phenomena at interfaces and demonstrating manipulation of the electronic and magnetic structures of materials at the shortest length scales.

Electron-Lattice Coupling in Correlated Materials of Low Electron Occupancy

In correlated materials including transition metal oxides, electronic properties and functionalities are modulated and enriched by couplings between the electron and lattice degrees of freedom. These couplings are controlled by external parameters such as chemical doping, pressure, magnetic and electric fields, and light irradiation. However, the electron-lattice coupling relies on orbital characters, i.e., symmetry and occupancy, of t_2g and e_g orbitals, so that a large electron-lattice coupling is limited to e_g electron system, whereas t_2g electron system exhibits an inherently weak coupling. Here, we design and demonstrate a strongly enhanced electron-lattice coupling in electron-doped SrTiO₃, that is, the t_2g electron system. In ultrathin films of electron-doped SrTiO₃ [i.e., (La_0.25Sr_0.75)TiO₃], we reveal the strong electron-lattice-orbital coupling, which is manifested by extremely increased tetragonality and the corresponding metal-to-insulator transition. Our findings open the way of an active tuning of the charge-lattice-orbital coupling to obtain new functionalities relevant to emerging nanoelectronic devices.

Electronic Band Alignment at Complex Oxide Interfaces Measured by Scanning Photocurrent Microscopy

The band alignment at an Al₂O₃/SrTiO₃ heterointerface forming a two-dimensional electron gas (2DEG) was investigated using scanning photocurrent microscopy (SPCM) in an electrolyte-gated environment. We used a focused UV laser source for above-the-bandgap illumination on the SrTiO₃ layer, creating electron-hole pairs that contributed to the photocurrent through migration towards the metal electrodes. The polarity of the SPCM signals of a bare SrTiO₃ device shows typical p-type behavior at zero gate bias, in which the photogenerated electrons are collected by the electrodes. In contrast, the SPCM polarity of 2DEG device indicates that the hole carriers were collected by the metal electrodes. Careful transport measurements revealed that the gate-dependent conductance of the 2DEG devices exhibits n-type switching behavior. More importantly, the SPCM signals in 2DEG devices demonstrated very unique gate-responses that cannot be found in conventional semiconducting devices, based on which we were able to perform detailed investigation into the electronic band alignment of the 2DEG devices and obtain the valence band offset at the heterointerface.

Off-Stoichiometry Driven Carrier Density Variation at the Interface of LaAlO3/SrTiO3

The interface between LaAlO₃ (LAO) and SrTiO₃ (STO) has attracted enormous interests due to its rich physical phenomena, such as metallic nature, magnetism and superconductivity. In this work, we report our experimental investigations on the influence of the LAO stoichiometry to the metallic interface. Taking advantage of the oxide molecular beam epitaxy (MBE) technique, a series of high quality LAO films with different nominal La/Al ratios and LAO thicknesses were grown on the TiO₂-terminated STO substrates, where systematic variations of the LAO lattice constant and transport property were observed. In particular, the sheet density can be largely reduced by nearly an order of magnitude with merely about 20% increase in the nominal La/Al ratio. Our finding provides an effective method on tuning the electron density of the two-dimensional electron liquid (2DEL) at the LAO/STO interface.

Interface-Induced Phenomena in Magnetism

This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a historical background and literature survey, but focuses on recent progress, identifying the most exciting new scientific results and pointing to promising future research directions. It starts with an introduction and overview of how basic magnetic properties are affected by interfaces, then turns to a discussion of charge and spin transport through and near interfaces and how these can be used to control the properties of the magnetic layer. Important concepts include spin accumulation, spin currents, spin transfer torque, and spin pumping. An overview is provided to the current state of knowledge and existing review literature on interfacial effects such as exchange bias, exchange spring magnets, spin Hall effect, oxide heterostructures, and topological insulators. The article highlights recent discoveries of interface-induced magnetism and non-collinear spin textures, non-linear dynamics including spin torque transfer and magnetization reversal induced by interfaces, and interfacial effects in ultrafast magnetization processes.

Gate-Tunable Band Structure of the LaAlO_{3}-SrTiO_{3} Interface

The two-dimensional electron system at the interface between LaAlO_{3} and SrTiO_{3} has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schrödinger-Poisson calculations and observe a Lifshitz transition at a density of 2.9×10^{13}cm^{-2}. Above the transition, the carrier density of one of the conducting bands decreases with increasing gate voltage. This surprising decrease is accurately reproduced in the calculations if electronic correlations are included. These results provide a clear, intuitive picture of the physics governing the electronic structure at complex-oxide interfaces.

Antiferromagnetic interlayer coupling and thus induced distinct spin texture for the [LaMnO3/LaCoO3]5 superlattices

Artificial engineering of an interfacial spin structure of complex oxides with strongly coupled spin, orbital, charge and lattice degrees of freedom is crucially important for the exploration of novel effects associated with magnetic tunneling, exchange biasing, and spin injecting/manipulating, which are the central issues of spintronics. Here we demonstrate the presence of a distinct interlayer coupling between LaMnO₃ (LMO) and LaCoO₃ (LCO) and the resulting dramatic effect on the spin structure. We found that the LCO layer in (LMO/LCO)₅ superlattices exhibits not only an antiferromagnetic coupling with a neighboring LMO layer but also a long-range magnetic order with substantially reduced magnetization. As suggested by density functional theory calculations, interlayer coupling can induce a spatial oscillation of magnetic moment within the LCO layer, resulting in low magnetization.

Accurate X-Ray Spectral Predictions: An Advanced Self-Consistent-Field Approach Inspired by Many-Body Perturbation Theory

Constrained-occupancy delta-self-consistent-field (ΔSCF) methods and many-body perturbation theories (MBPT) are two strategies for obtaining electronic excitations from first principles. Using the two distinct approaches, we study the O 1s core excitations that have become increasingly important for characterizing transition-metal oxides and understanding strong electronic correlation. The ΔSCF approach, in its current single-particle form, systematically underestimates the pre-edge intensity for chosen oxides, despite its success in weakly correlated systems. By contrast, the Bethe-Salpeter equation within MBPT predicts much better line shapes. This motivates one to reexamine the many-electron dynamics of x-ray excitations. We find that the single-particle ΔSCF approach can be rectified by explicitly calculating many-electron transition amplitudes, producing x-ray spectra in excellent agreement with experiments. This study paves the way to accurately predict x-ray near-edge spectral fingerprints for physics and materials science beyond the Bethe-Salpether equation.

Interfacial Multiferroics of TiO2/PbTiO3 Heterostructure Driven by Ferroelectric Polarization Discontinuity

Novel phenomena appear when two different oxide materials are combined together to form an interface. For example, at the interface of LaAlO₃/SrTiO₃, two-dimensional conductive states form to avoid the polar discontinuity, and magnetic properties are found at such an interface. In this work, we propose a new type of interface between two nonmagnetic and nonpolar oxides that could host a magnetic state, where it is the ferroelectric polarization discontinuity instead of the polar discontinuity that leads to the charge transfer, forming the interfacial magnetic state. As a concrete example, we investigate by first-principles calculations the heterostructures made of ferroelectric perovskite oxide PbTiO₃ and nonferroelectric polarized oxide TiO₂. We show that charge is transferred to the interfacial layer forming an interfacial ferromagnetic ordering that may persist up to room temperature. Especially, the strong coupling between bulk ferroelectric polarization and interface ferromagnetism represents a new type of magnetoelectric effect, which provides an ideal platform for exploring the intriguing interfacial multiferroics. The findings here are important not only for fundamental science but also for promising applications in nanoscale electronics and spintronics.