Organic flash memory on various flexible substrates for foldable and disposable electronics

Highly parallel and ultra-low-power probabilistic reasoning with programmable gaussian-like memory transistors

Probabilistic inference in data-driven models is promising for predicting outputs and associated confidence levels, alleviating risks arising from overconfidence. However, implementing complex computations with minimal devices still remains challenging. Here, utilizing a heterojunction of p- and n-type semiconductors coupled with separate floating-gate configuration, a Gaussian-like memory transistor is proposed, where a programmable Gaussian-like current-voltage response is achieved within a single device. A separate floating-gate structure allows for exquisite control of the Gaussian-like current output to a significant extent through simple programming, with an over 10000 s retention performance and mechanical flexibility. This enables physical evaluation of complex distribution functions with the simplified circuit design and higher parallelism. Successful implementation for localization and obstacle avoidance tasks is demonstrated using Gaussian-like curves produced from Gaussian-like memory transistor. With its ultralow-power consumption, simplified design, and programmable Gaussian-like outputs, our 3-terminal Gaussian-like memory transistor holds potential as a hardware platform for probabilistic inference computing.

A floating-gate field-effect transistor memory device based on organic crystals with a built-in tunneling dielectric by a one-step growth strategy

A floating-gate organic field-effect transistor (FG-OFET) memory device is becoming a promising candidate for emerging non-volatile memory applications due to the advantages of its sophisticated data-storage mechanism and reliable long-term data retention capacity. However, a conventional FG-OFET memory device suffers from complex fabrication technologies and poor mechanical flexibility, which limits its practical applications. Here, we propose a facile one-step liquid-surface drag coating strategy to fabricate a layered stack of 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (Dif-TES-ADT) crystals and high-quality insulating polymer polystyrene (PS). The liquid surface enhances the spreading area of an organic solution and facilitates the unidirectional growth of organic crystals. In the bilayer-structured blend, the bottom PS polymer and the top Dif-TES-ADT semiconductor serve as a tunneling dielectric and an active memory layer of an FG-OFET memory device, respectively. Consequently, a flexible FG-OFET memory device with a large memory window of 41.4 V, a long retention time of 5000 s, and a high current ON/OFF ratio of 105 could be achieved, showing the best performance ever reported for organic thin film-based FG-OFET memory devices. In addition, multi-level data storage (3 bits per cell) can be achieved by tuning the gate voltage magnitude. Our work not only provides a general strategy for the growth of high-quality organic crystals, but also paves the way towards high-performance flexible memory devices.

Transfer-Free Analog and Digital Flexible Memristors Based on Boron Nitride Films

The traditional von Neumann architecture of computers, constrained by the inherent separation of processing and memory units, faces challenges, for instance, memory wall issue. Neuromorphic computing and in-memory computing offer promising paradigms to overcome the limitations of additional data movement and to enhance computational efficiency. In this work, transfer-free flexible memristors based on hexagonal boron nitride films were proposed for analog neuromorphic and digital memcomputing. Analog memristors were prepared; they exhibited synaptic behaviors, including paired-pulse facilitation and long-term potentiation/depression. The resistive switching mechanism of the analog memristors were investigated through transmission electron microscopy. Digital memristors were prepared by altering the electrode materials, and they exhibited reliable device performance, including a large on/off ratio (up to 106), reproducible switching endurance (>100 cycles), non-volatile characteristic (>60 min), and effective operating under bending conditions (>100 times).

Organic Phototransistor with Light-Induced Contact Modulation and Sensitivity Enhancement Using a C60/C70:TAPC Hybrid Channel

Organic phototransistors (OPTs) are attracting a significant degree of interest as devices that have the potential to play multiple roles, including light sensing, signal amplification, and switching for addressing when they are used for matrix arrays. However, it has been challenging to realize OPTs that can perform all of these roles simultaneously at a sufficient performance level because the channel materials with high carrier mobility often exhibit relatively low photoabsorption. In this work, we propose OPTs with a hybrid bilayer channel consisting of a neat C60 layer and a bulk-heterojunction layer of C70 and 1,1-bis(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane (TAPC) as a possible solution to this issue. While the C60 layer serves as the main carrier-transporting layer with high mobility, the C70:TAPC layer operates as a photoactive layer wherein the photogenerated carriers provide photoinduced contact modulation that leads to a significant enhancement in photosensitivity. With the optimal design maximizing the absorption, the proposed hybrid-channel OPTs show a responsivity of ca. 180 A/W, which is 4.5 times higher than that of the control OPT with a C70:TAPC single channel. The operation mechanism and the origin for the improvement are verified by an in-depth analysis of the photoinduced modulation of the channel and contact resistances of the OPTs.

A reconfigurable binary/ternary logic conversion-in-memory based on drain-aligned floating-gate heterojunction transistors

A new type of heterojunction non-volatile memory transistor (H-MTR) has been developed, in which the negative transconductance (NTC) characteristics can be controlled systematically by a drain-aligned floating gate. In the H-MTR, a reliable transition between N-shaped transfer curves with distinct NTC and monolithically current-increasing transfer curves without apparent NTC can be accomplished through programming operation. Based on the H-MTR, a binary/ternary reconfigurable logic inverter (R-inverter) has been successfully implemented, which showed an unprecedentedly high static noise margin of 85% for binary logic operation and 59% for ternary logic operation, as well as long-term stability and outstanding cycle endurance. Furthermore, a ternary/binary dynamic logic conversion-in-memory has been demonstrated using a serially-connected R-inverter chain. The ternary/binary dynamic logic conversion-in-memory could generate three different output logic sequences for the same input signal in three logic levels, which is a new logic computing method that has never been presented before.

Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics

The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

An epidermal electronic system for physiological information acquisition, processing, and storage with an integrated flash memory array

Epidermal electronic systems that simultaneously provide physiological information acquisition, processing, and storage are in high demand for health care/clinical applications. However, these system-level demonstrations using flexible devices are still challenging because of obstacles in device performance, functional module construction, or integration scale. Here, on the basis of carbon nanotubes, we present an epidermal system that incorporates flexible sensors, sensor interface circuits, and an integrated flash memory array to collect physiological information from the human body surface; amplify weak biosignals by high-performance differential amplifiers (voltage gain of 27 decibels, common-mode rejection ratio of >43 decibels, and gain bandwidth product of >22 kilohertz); and store the processed information in the memory array with performance on par with industrial standards (retention time of 10⁸ seconds, program/erase voltages of ±2 volts, and endurance of 10⁶ cycles). The results shed light on the great application potential of epidermal electronic systems in personalized diagnostic and physiological monitoring.

Vertically stacked, low-voltage organic ternary logic circuits including nonvolatile floating-gate memory transistors

Multi-valued logic (MVL) circuits based on heterojunction transistor (HTR) have emerged as an effective strategy for high-density information processing without increasing the circuit complexity. Herein, an organic ternary logic inverter (T-inverter) is demonstrated, where a nonvolatile floating-gate flash memory is employed to control the channel conductance systematically, thus realizing the stabilized T-inverter operation. The 3-dimensional (3D) T-inverter is fabricated in a vertically stacked form based on all-dry processes, which enables the high-density integration with high device uniformity. In the flash memory, ultrathin polymer dielectrics are utilized to reduce the programming/erasing voltage as well as operating voltage. With the optimum programming state, the 3D T-inverter fulfills all the important requirements such as full-swing operation, optimum intermediate logic value (~V_DD/2), high DC gain exceeding 20 V/V as well as low-voltage operation (< 5 V). The organic flash memory exhibits long retention characteristics (current change less than 10% after 10⁴s), leading to the long-term stability of the 3D T-inverter. We believe the 3D T-inverter employing flash memory developed in this study can provide a useful insight to achieve high-performance MVL circuits.

High-density information processing without increasing the circuit complexity is highly desired in electronics. Here, Im et al. demonstrate a low-voltage organic ternary logic circuit vertically integrated with the nonvolatile flash memory, increasing the information density by a factor of 3.

Solution-Processed Organic Photodetectors with Renewable Materials

An organic photodetector prepared by a simple solution method based on renewable citrus pectin with an optimized concentration of aluminum nitrate (AlC05) is introduced herein. The effects of different concentrations of aluminum nitrate on the morphology and optical properties were investigated through various characterization methods. An AlC concentration of 0.5 mg/mL was found to provide the highest on/off ratio and acceptable rise and decay times. Also, the optimized device (Al/AlC0.5/ITO) exhibited good stability and repeatability at a 0.1 V bias under 440 nm visible light. Based on these results, citrus pectin materials were successfully used to fabricate an organic photodetector with a simple and cost-efficient fabrication process, while taking into account environmental commitments.

Contribution of Polymers to Electronic Memory Devices and Applications

Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.

Recent Process of Flexible Transistor-Structured Memory

Flexible transistor-structured memory (FTSM) has attracted great attention for its important role in flexible electronics. For nonvolatile information storage, FTSMs with floating-gate, charge-trap, and ferroelectric mechanisms have been developed. By introducing an optical sensory module, FTSM can be operated by optical inputs to function as an optical memory transistor. As a special type of FTSM, transistor-structured artificial synapse emulates important functions of a biological synapse to mimic brain-inspired memory behaviors and nervous signal transmissions. This work reviews the recent development of the above mentioned FTSMs, with a focus on working mechanism and materials, and flexibility.

High-bandwidth light inputting multilevel photoelectric memory based on thin-film transistor with a floating gate of CsPbBr3/CsPbI3 blend quantum dots

The electronic-photonic convergent systems can overcome the data transmission bottleneck for microchips by enabling processor and memory chips with high-bandwidth optical input/output. However, current silicon-based electronic-photonic systems require various functional devices/components to convert high-bandwidth optical signals into electrical ones, thus making further integrations of sophisticated systems rather difficult. Here, we demonstrate thin-film transistor-based photoelectric memories employing CsPbBr₃/CsPbI₃ blend perovskite quantum dots (PQDs) as a floating gate, and multilevel memory cells are achieved under programming and erasing modes, respectively, by imputing high-bandwidth optical signals. For different bandwidth light input (i.e. 500-550, 575-650 and 675-750 nm) with the same intensity, three levels of programming window (i.e. 3.7, 1.9 and 0.8 V) and erasing window (i.e. -1.9, -0.6 and -0.1 V) are obtained under electrical pulses, respectively. This is because the blend PQDs have two different bandgaps, and different amounts of photo-generated carriers can be produced for different wavelength optical inputs. It is noticed that the 675-750 nm light inputs have no effects on both programming and erasing windows because of no photo-carriers generation. Four memory states are demonstrated, showing enough large gaps (1.12-5.61 V) between each other, good data retention and programming/erasing endurance. By inputting different optical signals, different memory states can be switched easily. Therefore, this work directly demonstrates high-bandwidth light inputting multilevel memory cells for novel electronic-photonic systems.

Molecular Insight into Real-Time Reaction Kinetics of Free Radical Polymerization from the Vapor Phase by In-Situ Mass Spectrometry

The combination of organic chemistry and chemical vapor deposition enables a unique way to deposit conformal, high quality polymer thin films from the vapor phase. Particularly initiated chemical vapor deposition (iCVD) has recently shown its great potential in many different application fields. With the ever-increasing demands on the process, the need for additional process refinement is also growing. In this study the enhancement of the iCVD process by in-situ mass spectrometry is presented. The approach enables insight into real-time reaction kinetics during the deposition process as well as identification of reaction pathways. Furthermore, the composition of the gas phase can be precisely controlled and spontaneously adjusted if necessary. Particularly the deposition of thin films with thicknesses in the low nanometer range and the deposition of copolymers can benefit from this approach. The presented approach enables enhanced process control as well as the ability to perform extensive kinetic studies.

Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications

The data processing efficiency of traditional computers is suffering from the intrinsic limitation of physically separated processing and memory units. Logic-in-memory and brain-inspired neuromorphic computing are promising in-memory computing paradigms for improving the computing efficiency and avoiding high power consumption caused by extra data movement. However, memristors that can conduct digital memcomputing and neuromorphic computing simultaneously are limited by the difference in the information form between digital data and analogue data. In order to solve this problem, this paper proposes a flexible low-dimensional memristor based on boron nitride (BN), which has ultralow-power non-volatile memory characteristic, reliable digital memcomputing capabilities, and integrated ultrafast neuromorphic computing capabilities in a single in situ computing system. The logic-in-memory basis, including FALSE, material implication (IMP), and NAND, are implemented successfully. The power consumption of the proposed memristor per synaptic event (198 fJ) can be as low as biology (fJ level) and the response time (1 μs) of the neuromorphic computing is four orders of magnitude shorter than that of the human brain (10 ms), paving the way for wearable ultrahigh efficient next-generation in-memory computing architectures.

Molecular layer deposition of hybrid siloxane thin films by ring opening of cyclic trisiloxane (V3D3) and azasilane

In this work, we report the first ring opening vapor to solid polymerization of cyclotrisiloxane and N-methyl-aza-2,2,4-trimethylsilacyclopentane by molecular layer deposition (MLD). This process was studied in situ with a quartz crystal microbalance and the thin film was characterized by X-ray photoelectron spectroscopy, ATR-FTIR and high-resolution transmission electron microscopy.

Nonvolatile molecular memory with the multilevel states based on MoS2 nanochannel field effect transistor through tuning gate voltage to control molecular configurations

A new flexible memory element is crucial for mobile and wearable electronics. A new concept for memory operation and innovative device structure with new materials is certainly required to address the bottleneck of memory applications now and in the future. We report a new nonvolatile molecular memory with a new operating mechanism based on two-dimensional (2D) material nanochannel field-effect transistors (FETs). The smallest channel length for our 2D material nanochannel FETs was approximately 30 nm. The modified molecular configuration for charge induced in the nanochannel of the MoS₂ FET can be tuned by applying an up-gate voltage pulse, which can vary the channel conductance to exhibit memory states. Through controlling the amounts of triggered molecules through either different gate voltage pulses or gate duration time, multilevel states were obtained in the molecular memory. These new molecular memory transistors exhibited an erase/program ratio of more than three orders of current magnitude and high sensitivity, of a few picoamperes, at the current level. Reproducible operation and four-level states with stable retention and endurance were achieved. We believe this prototype device has potential for use in future memory devices.

3D Self-Assembled Microelectronic Devices: Concepts, Materials, Applications

Modern microelectronic systems and their components are essentially 3D devices that have become smaller and lighter in order to improve performance and reduce costs. To maintain this trend, novel materials and technologies are required that provide more structural freedom in 3D over conventional microelectronics, as well as easier parallel fabrication routes while maintaining compatability with existing manufacturing methods. Self-assembly of initially planar membranes into complex 3D architectures offers a wealth of opportunities to accommodate thin-film microelectronic functionalities in devices and systems possessing improved performance and higher integration density. Existing work in this field, with a focus on components constructed from 3D self-assembly, is reviewed, and an outlook on their application potential in tomorrow's microelectronics world is provided.

Sandwich-structure transferable free-form OLEDs for wearable and disposable skin wound photomedicine

Free-form optoelectronic devices can provide hyper-connectivity over space and time. However, most conformable optoelectronic devices can only be fabricated on flat polymeric materials using low-temperature processes, limiting their application and forms. This paper presents free-form optoelectronic devices that are not dependent on the shape or material. For medical applications, the transferable OLED (10 μm) is formed in a sandwich structure with an ultra-thin transferable barrier (4.8 μm). The results showed that the fabricated sandwich-structure transferable OLED (STOLED) exhibit the same high-efficiency performance on cylindrical-shaped materials and on materials such as textile and paper. Because the neutral axis is freely adjustable using the sandwich structure, the textile-based OLED achieved both folding reliability and washing reliability, as well as a long operating life (>150 h). When keratinocytes were irradiated with red STOLED light, cell proliferation and cell migration increased by 26 and 32%, respectively. In the skin equivalent model, the epidermis thickness was increased by 39%; additionally, in organ culture, not only was the skin area increased by 14%, but also, re-epithelialization was highly induced. Based on the results, the STOLED is expected to be applicable in various wearable and disposable photomedical devices.

Spontaneous Generation of a Molecular Thin Hydrophobic Skin Layer on a Sub-20 nm, High-k Polymer Dielectric for Extremely Stable Organic Thin-Film Transistor Operation

Polymer dielectric materials with hydroxyl functionalities such as poly(4-vinylphenol) and poly(vinyl alcohol) have been utilized widely in organic thin-film transistors (OTFTs) because of their excellent insulating performance gained by hydroxyl-mediated cross-linking. However, the polar hydroxyl functionality also deleteriously affects the performance of OTFTs and significantly impairs the device stability. In this study, a sub-20 nm, high-k copolymer dielectric with hydroxyl functionality, poly(2-hydroxyethyl acrylate-co-di(ethylene glycol) divinyl ether), was synthesized in the vapor phase via initiated chemical vapor deposition. The inherently dry environment offered by the vapor-phase polymer synthesis prompted the snuggling of polar hydroxyl functionalities into the bulk polymer film to form a molecular thin hydrophobic skin layer at its surface, verified by near-edge X-ray absorption fine structure analysis. The chemical composition of the copolymer dielectric was optimized systematically to achieve high dielectric constant (k ≈ 6.2) as well as extremely low leakage current densities (less than 3 × 10^-8 A/cm² in the range of ±2 MV/cm) even with sub-20 nm thickness, leading to one of the highest capacitance (higher than 300 nF/cm²) achieved by a single polymer dielectric to date. Exploiting the structural advantage of the cross-linked high-k polymer dielectric, high-performance OTFTs were obtained. Notably, the spontaneously formed molecular thin, hydrophobic skin layer in the copolymer film substantially suppressed the hysteresis in the transistor operation. The trap analysis also suggested the formation of bulk trap with a high energy barrier and sufficiently low trap densities at the semiconductor/dielectric interface, owing to the surface skin layer. Furthermore, the OTFTs with the -OH-containing copolymer dielectric showed an unprecedentedly excellent operational stability. No apparent OTFT degradation was observed up to 50 000 s of high constant voltage stress (corresponding to the applied electric field of 1.4 MV/cm) because of the markedly suppressed interfacial trap density by the hydrophobic skin layer, together with the current compensation by the bulk hydroxyl functionalities. We believe that the surface modification-free, one-step polymer dielectric synthetic strategy will provide a new insight into the design of polymer dielectric materials for high-performance, low-power soft electronic devices with high operational stability.

Interwoven Carbon Nanotube Wires for High-Performing, Mechanically Robust, Washable, and Wearable Supercapacitors

An energy storage system with large storage capacity, rapid power release, and simultaneous tolerance to harsh mechanical stresses is a major bottleneck for realizing self-sustaining, wearable electronics. Addressing this, we demonstrate carbon nanotube wire (CNT-wire) interwoven solid-state supercapacitive energy storage devices (sewcaps) exhibiting superior storage capacity (30 Wh/kg, compared to electrochemical capacitors at ∼10 Wh/kg) and 14-fold higher power density (3511 W/kg) compared to Li-ion batteries (∼250 W/kg). While the high specific surface area and electrical conductivity of CNT-wires and high ionic conductivity of the electrolyte enable high energy density, the device design enables the combination of planar and radial diffusive pathways for ultralow interface resistance (∼0.2 mΩ/sewcap) and rapid charging-discharging ability (τ = 1.16 ms). Thus, this versatile approach of interweaving to form functional devices provides tunable power delivery across six orders of magnitude (2 μW to 2 W) through reconfiguration of the interweaving pattern and density. Importantly, such textile-integrated sewcaps exhibit unaltered performance (>95% retention across 4000 charge-discharge cycles) under extreme mechanical punishments such as repeated laundering, flexing (∼68°), rolling (360°), and crushing (∼21.8 kPa), implying direct interfacing with wearable platforms.

Recent Progress in Inkjet-Printed Thin-Film Transistors

Drop-on-demand inkjet printing is one of the most attractive techniques from a manufacturing perspective due to the possibility of fabrication from a digital layout at ambient conditions, thus leading to great opportunities for the realization of low-cost and flexible thin-film devices. Over the past decades, a variety of inkjet-printed applications including thin-film transistors (TFTs), radio-frequency identification devices, sensors, and displays have been explored. In particular, many research groups have made great efforts to realize high-performance TFTs, for application as potential driving components of ubiquitous wearable electronics. Although there are still challenges to enable the commercialization of printed TFTs beyond laboratory-scale applications, the field of printed TFTs still attracts significant attention, with remarkable developments in soluble materials and printing methodology. Here, recent progress in printing-based TFTs is presented from materials to applications. Significant efforts to improve the electrical performance and device-yield of printed TFTs to match those of counterparts fabricated using conventional deposition or photolithography methods are highlighted. Moreover, emerging low-dimension printable semiconductors, including carbon nanotubes and transition metal dichalcogenides as well as mature semiconductors, and new-concept printed switching devices, are also discussed.

Gelatin Hydrogel-Based Organic Electrochemical Transistors and Their Integrated Logic Circuits

We suggest gelatin hydrogel as an electrolyte and demonstrate organic electrochemical transistors (OECTs) based on a sheet of gelatin. We also modulate electrical characteristics of the OECT with respect to pH condition of the gelatin hydrogel from acid to base and analyze its characteristics based on the electrochemical theory. Moreover, we extend the gelatin-based OECT to electrochemical logic circuits, for example, NOT, NOR, and NAND gates.

Spontaneous Additive Nanopatterning from Solution Route Using Selective Wetting

Nanopatterns of functional materials have successfully led innovations in a wide range of fields, but further exploration of their full potential has often been limited because of complex and cost-inefficient patterning processes. We here propose an additive nanopatterning process of functional materials from solution route using selective wetting phenomenon. The proposed process can produce nanopatterns as narrow as 150 nm with high yield over large area at ultrahigh process speed, that is, the speed of solution dragging, of up to ca. 4.6 m·min^-1. The process is highly versatile that it can utilize a wide range of solution materials, control vertical structures including pattern thickness and multistacks, and produce nanopatterns on various substrates with emerging form factors such as foldability and disposability. The solution patterning in nanoscale by selective wetting is enabled by corresponding surface energy patterns in high contrast that are achieved by one-step imprinting onto hydrophobic/hydrophilic bilayers. The mechanisms and control parameters for the solution patterning are revealed by fluid-dynamic simulation. With the aforementioned advantages, we demonstrate 25 400 pixel-per-inch light-emitting pixel arrays and a plasmonic color filter of 10 cm × 10 cm area on a plastic substrate as potential applications.