Transport evidence of asymmetric spin-orbit coupling in few-layer superconducting 1Td-MoTe2

Metal telluride nanosheets by scalable solid lithiation and exfoliation

Transition metal tellurides (TMTs) have been ideal materials for exploring exotic properties in condensed-matter physics, chemistry and materials science1-3. Although TMT nanosheets have been produced by top-down exfoliation, their scale is below the gram level and requires a long processing time, restricting their effective application from laboratory to market4-8. We report the fast and scalable synthesis of a wide variety of MTe2 (M = Nb, Mo, W, Ta, Ti) nanosheets by the solid lithiation of bulk MTe2 within 10 min and their subsequent hydrolysis within seconds. Using NbTe2 as a representative, we produced more than a hundred grams (108 g) of NbTe2 nanosheets with 3.2 nm mean thickness, 6.2 µm mean lateral size and a high yield (>80%). Several interesting quantum phenomena, such as quantum oscillations and giant magnetoresistance, were observed that are generally restricted to highly crystalline MTe2 nanosheets. The TMT nanosheets also perform well as electrocatalysts for lithium-oxygen batteries and electrodes for microsupercapacitors (MSCs). Moreover, this synthesis method is efficient for preparing alloyed telluride, selenide and sulfide nanosheets. Our work opens new opportunities for the universal and scalable synthesis of TMT nanosheets for exploring new quantum phenomena, potential applications and commercialization.

Observation of Emergent Superconductivity in the Topological Insulator Ta2Pd3Te5 via Pressure Manipulation

Topological insulators offer significant potential to revolutionize diverse fields driven by nontrivial manifestations of their topological electronic band structures. However, the realization of superior integration between exotic topological states and superconductivity for practical applications remains a challenge, necessitating a profound understanding of intricate mechanisms. Here, we report experimental observations for a novel superconducting phase in the pressurized second-order topological insulator candidate Ta2Pd3Te5, and the high-pressure phase maintains its original ambient pressure lattice symmetry up to 45 GPa. Our in situ high-pressure synchrotron X-ray diffraction, electrical transport, infrared reflectance, and Raman spectroscopy measurements, in combination with rigorous theoretical calculations, provide compelling evidence for the association between the superconducting behavior and the densified phase. The electronic state change around 20 GPa was found to modify the topology of the Fermi surface directly, which synergistically fosters the emergence of robust superconductivity. In-depth comprehension of the fascinating properties exhibited by the compressed Ta2Pd3Te5 phase is achieved, highlighting the extraordinary potential of topological insulators for exploring and investigating high-performance electronic advanced devices under extreme conditions.

Strain-Induced 2H to 1T' Phase Transition in Suspended MoTe2 Using Electric Double Layer Gating

MoTe2 can be converted from the semiconducting (2H) phase to the semimetallic (1T') phase by several stimuli including heat, electrochemical doping, and strain. This type of phase transition, if reversible and gate-controlled, could be useful for low-power memory and logic. In this work, a gate-controlled and fully reversible 2H to 1T' phase transition is demonstrated via strain in few-layer suspended MoTe2 field effect transistors. Strain is applied by the electric double layer gating of a suspended channel using a single ion conducting solid polymer electrolyte. The phase transition is confirmed by simultaneous electrical transport and Raman spectroscopy. The out-of-plane vibration peak (A1g)─a signature of the 1T' phase─is observed when VSG ≥ 2.5 V. Further, a redshift in the in-plane vibration mode (E2g) is detected, which is a characteristic of a strain-induced phonon shift. Based on the magnitude of the shift, strain is estimated to be 0.2-0.3% by density functional theory. Electrically, the temperature coefficient of resistance transitions from negative to positive at VSG ≥ 2 V, confirming the transition from semiconducting to metallic. The approach to gate-controlled, reversible straining presented here can be extended to strain other two-dimensional materials, explore fundamental material properties, and introduce electronic device functionalities.

Valley-dimensionality locking of superconductivity in cubic phosphides

Two-dimensional superconductivity is primarily realized in atomically thin layers through extreme exfoliation, epitaxial growth, or interfacial gating. Apart from their technical challenges, these approaches lack sufficient control over the Fermiology of superconducting systems. Here, we offer a Fermiology-engineering approach, allowing us to desirably tune the coherence length of Cooper pairs and the dimensionality of superconducting states in arsenic phosphides AsxP1-x under hydrostatic pressure. We demonstrate how this turns these compounds into tunable two-dimensional superconductors with a dome-shaped phase diagram even in the bulk limit. This peculiar behavior is shown to result from an unconventional valley-dimensionality locking mechanism, driven by a delicate competition between three-dimensional hole-type and two-dimensional electron-type energy pockets spatially separated in momentum space. The resulting dimensionality crossover is further discussed to be systematically controllable by pressure and stoichiometry tuning. Our findings pave a unique way to realize and control superconducting phases with special pairing and dimensional orders.

Ambipolar Superconductivity with Strong Pairing Interaction in Monolayer 1T'-MoTe2

Gate tunable two-dimensional (2D) superconductors offer significant advantages in studying superconducting phase transitions. Here, we address superconductivity in exfoliated 1T'-MoTe2 monolayers with an intrinsic band gap of ∼7.3 meV using field effect doping. Despite large differences in the dispersion of the conduction and valence bands, superconductivity can be achieved easily for both electrons and holes. The onset of superconductivity occurs near 7-8 K for both charge carrier types. This temperature is much higher than that in bulk samples. Also the in-plane upper critical field is strongly enhanced and exceeds the BCS Pauli limit in both cases. Gap information is extracted using point-contact spectroscopy. The gap ratio exceeds multiple times the value expected for BCS weak-coupling. All of these observations suggest a strong enhancement of the pairing interaction.

Hydrogenation induced high-temperature superconductivity in two-dimensional W2C3

The discovery of highly crystalline two-dimensional (2D) superconductors provides a new alluring branch for exploring the fundamental significances. Based on first-principles calculations, we predict a new kind of 2D stable material W2C3, which is a semimetal but not a superconductor because of the weak electron-phonon coupling (EPC) strength. After hydrogenation, W2C3H2 possesses the intrinsic metallic properties with a large density of states (DOS) at the Fermi energy (EF). More interestingly, the EPC strength is greatly enhanced after hydrogenation and the calculated critical temperature (Tc) is 40.5 K. Furthermore, the compressive strain can obviously soften the low-frequency phonons and enhance the EPC strength. Then, the Tc of W2C3H2 can be increased from 40.5 K to 49.1 K with -4% compressive strain. This work paves the way for providing a new platform for 2D superconductivity.

Emergent layer stacking arrangements in c-axis confined MoTe2

The layer stacking order in 2D materials strongly affects functional properties and holds promise for next-generation electronic devices. In bulk, octahedral MoTe2 possesses two stacking arrangements, the ferroelectric Weyl semimetal Td phase and the higher-order topological insulator 1T' phase. However, in thin flakes of MoTe2, it is unclear if the layer stacking follows the Td, 1T', or an alternative stacking sequence. Here, we use atomic-resolution scanning transmission electron microscopy to directly visualize the MoTe2 layer stacking. In thin flakes, we observe highly disordered stacking, with nanoscale 1T' and Td domains, as well as alternative stacking arrangements not found in the bulk. We attribute these findings to intrinsic confinement effects on the MoTe2 stacking-dependent free energy. Our results are important for the understanding of exotic physics displayed in MoTe2 flakes. More broadly, this work suggests c-axis confinement as a method to influence layer stacking in other 2D materials.

Enhanced Superconductivity and Upper Critical Field in Ta-Doped Weyl Semimetal Td -MoTe2

2D transition metal dichalcogenides are promising platforms for next-generation electronics and spintronics. The layered Weyl semimetal (W,Mo)Te₂ series features structural phase transition, nonsaturated magnetoresistance, superconductivity, and exotic topological physics. However, the superconducting critical temperature of the bulk (W,Mo)Te₂ remains ultralow without applying a high pressure. Here, the significantly enhanced superconductivity is observed with a transition temperature as large as about 7.5 K in bulk Mo_{1- x} Ta_x Te₂ single crystals upon Ta doping (0 ≤ x ≤ 0.22), which is attributed to an enrichment of density of states at the Fermi level. In addition, an enhanced perpendicular upper critical field of 14.5 T exceeding the Pauli limit is also observed in T_d -phase Mo_{1- x} Ta_x Te₂ (x = 0.08), indicating the possible emergence of unconventional mixed singlet-triplet superconductivity owing to the inversion symmetry breaking. This work provides a new pathway for exploring the exotic superconductivity and topological physics in transition metal dichalcogenides.

Advanced Strategies in Synthesis of Two-Dimensional Materials with Different Compositions and Phases

In recent years, 2D materials-M_a X_b with different compositions and phases have attracted tremendous attention due to their diverse structures and electronic features. The common thermodynamically stable 2H and metastable 1T phases have been extensively studied, however, there are many unusual compositions and phases with novel physical properties that have yet to be explored. Therefore, summarization of the synthesis strategies, atomic structures, and the unique physical properties of 2D materials with different compositions and phases is very important for their development. In this review, the strategies including chemical vapor deposition, intercalation, atomic layer deposition, chemical vapor transport, and electrostatic gating for synthesizing various 2D materials with different phases and compositions are first summarized. Specially, the intercalation strategies including heterogeneous- and self-intercalation for controllable phases and compositions fabrication are mainly discussed. Then, the novel atomic structures of 2D materials are analyzed, followed by the fascinating physical properties including ferroelectricity, ferromagnetism, superconductivity, and so on. Finally, the conclusion and outlook are offered including the challenges and future prospects of 2D materials with different compositions and phases.

Realization of Multiple Charge-Density Waves in NbTe2 at the Monolayer Limit

Layered transition-metal dichalcogenides down to the monolayer (ML) limit provide a fertile platform for exploring charge-density waves (CDWs). Here, we experimentally unveil the richness of the CDW phases in ML-NbTe₂ for the first time. Not only the theoretically predicted 4 × 4 and 4 × 1 phases but also two unexpected 28×28 and 19×19 phases are realized. For such a complex CDW system, we establish an exhaustive growth phase diagram via systematic efforts in the material synthesis and scanning tunneling microscope characterization. Moreover, the energetically stable phase is the larger-scale order (19×19), which is surprisingly in contradiction to the prior prediction (4 × 4). These findings are confirmed using two different kinetic pathways: i.e., direct growth at proper growth temperatures (T) and low-T growth followed by high-T annealing. Our results provide a comprehensive diagram of the "zoo" of CDW orders in ML-NbTe₂.

Berezinskii-Kosterlitz-Thouless Transition in the Type-I Weyl Semimetal PtBi2

Symmetry breaking in topological matter has become in recent years a key concept in condensed matter physics to unveil novel electronic states. In this work, we predict that broken inversion symmetry and strong spin-orbit coupling in trigonal PtBi₂ lead to a type-I Weyl semimetal band structure. Transport measurements show an unusually robust low dimensional superconductivity in thin exfoliated flakes up to 126 nm in thickness (with T_c ∼ 275-400 mK), which constitutes the first report and study of unambiguous superconductivity in a type-I Weyl semimetal. Remarkably, a Berezinskii-Kosterlitz-Thouless transition with T_BKT ∼ 310 mK is revealed in up to 60 nm thick flakes, which is nearly an order of magnitude thicker than the rare examples of two-dimensional superconductors exhibiting such a transition. This makes PtBi₂ an ideal platform to study low dimensional and unconventional superconductivity in topological semimetals.

Two-Dimensional Van Der Waals Topological Materials: Preparation, Properties, and Device Applications

Over the past decade, 2D van der Waals (vdW) topological materials (TMs), including topological insulators and topological semimetals, which combine atomically flat 2D layers and topologically nontrivial band structures, have attracted increasing attention in condensed-matter physics and materials science. These easily cleavable and integrated TMs provide the ideal platform for exploring topological physics in the 2D limit, where new physical phenomena may emerge, and represent a potential to control and investigate exotic properties and device applications in nanoscale topological phases. However, multifaced efforts are still necessary, which is the prerequisite for the practical application of 2D vdW TMs. Herein, this review focuses on the preparation, properties, and device applications of 2D vdW TMs. First, three common preparation strategies for 2D vdW TMs are summarized, including single crystal exfoliation, chemical vapor deposition, and molecular beam epitaxy. Second, the origin and regulation of various properties of 2D vdW TMs are introduced, involving electronic properties, transport properties, optoelectronic properties, thermoelectricity, ferroelectricity, and magnetism. Third, some device applications of 2D vdW TMs are presented, including field-effect transistors, memories, spintronic devices, and photodetectors. Finally, some significant challenges and opportunities for the practical application of 2D vdW TMs in 2D topological electronics are briefly addressed.

Unveiling the Accelerated Water Electrolysis Kinetics of Heterostructural Iron-Cobalt-Nickel Sulfides by Probing into Crystalline/Amorphous Interfaces in Stepwise Catalytic Reactions

Amorphization and crystalline grain boundary engineering are adopted separately in improving the catalytic kinetics for water electrolysis. Yet, the synergistic effect and advance in the cooperated form of crystalline/amorphous interfaces (CAI) have rarely been elucidated insightfully. Herein, a trimetallic FeCo(NiS₂ )₄ catalyst with numerous CAI (FeCo(NiS₂ )₄ -C/A) is presented, which shows highly efficient catalytic activity toward both hydrogen and oxygen evolution reactions (HER and OER). Density functional theory (DFT) studies reveal that CAI plays a significant role in accelerating water electrolysis kinetics, in which Co atoms on the CAI of FeCo(NiS₂ )₄ -C/A catalyst exhibit the optimal binding energy of 0.002 eV for H atoms in HER while it also has the lowest reaction barrier of 1.40 eV for the key step of OER. H₂ O molecules are inclined to be absorbed on the interfacial Ni atoms based on DFT calculations. As a result, the heterostructural CAI-containing catalyst shows a low overpotential of 82 and 230 mV for HER and OER, respectively. As a bifunctional catalyst, it delivers a current density of 10 mA cm^-2 at a low cell voltage of 1.51 V, which enables it a noble candidate as metal-based catalysts for water splitting. This work explores the role of CAI in accelerating the HER and OER kinetics for water electrolysis, which sheds light on the development of efficient, stable, and economical water electrolysis systems by facile interface-engineering implantations.

Growth of bilayer MoTe2 single crystals with strong non-linear Hall effect

The reduced symmetry in strong spin-orbit coupling materials such as transition metal ditellurides (TMDTs) gives rise to non-trivial topology, unique spin texture, and large charge-to-spin conversion efficiencies. Bilayer TMDTs are non-centrosymmetric and have unique topological properties compared to monolayer or trilayer, but a controllable way to prepare bilayer MoTe₂ crystal has not been achieved to date. Herein, we achieve the layer-by-layer growth of large-area bilayer and trilayer 1T′ MoTe₂ single crystals and centimetre-scale films by a two-stage chemical vapor deposition process. The as-grown bilayer MoTe₂ shows out-of-plane ferroelectric polarization, whereas the monolayer and trilayer crystals are non-polar. In addition, we observed large in-plane nonlinear Hall (NLH) effect for the bilayer and trilayer T_d phase MoTe₂ under time reversal-symmetric conditions, while these vanish for thicker layers. For a fixed input current, bilayer T_d MoTe₂ produces the largest second harmonic output voltage among the thicker crystals tested. Our work therefore highlights the importance of thickness-dependent Berry curvature effects in TMDTs that are underscored by the ability to grow thickness-precise layers.

2D transition metal ditellurides exhibit nontrivial topological phases, but the controlled bottom-up synthesis of these materials is still challenging. Here, the authors report the layer-by-layer growth of large-area bilayer and trilayer 1T’ MoTe2 films, showing thickness-dependent ferroelectricity and nonlinear Hall effect.

Supercurrent diode effect and finite-momentum superconductors

Our work shows a fascinating application of finite-momentum superconductivity, the supercurrent diode effect, which is being reported in a growing number of experiments. We show that, under external magnetic field, Cooper pairs can acquire finite momentum so that critical currents in the direction parallel and antiparallel to the Cooper pair momentum become unequal.

When both inversion and time-reversal symmetries are broken, the critical current of a superconductor can be nonreciprocal. In this work, we show that, in certain classes of two-dimensional superconductors with antisymmetric spin–orbit coupling, Cooper pairs acquire a finite momentum upon the application of an in-plane magnetic field, and, as a result, critical currents in the direction parallel and antiparallel to the Cooper pair momentum become unequal. This supercurrent diode effect is also manifested in the polarity dependence of in-plane critical fields induced by a supercurrent. These nonreciprocal effects may be found in polar SrTiO₃ film, few-layer MoTe₂ in the T_d phase, and twisted bilayer graphene in which the valley degree of freedom plays a role analogous to spin.

Emerging Phases of Layered Metal Chalcogenides

Layered metal chalcogenides, as a "rich" family of 2D materials, have attracted increasing research interest due to the abundant choices of materials with diverse structures and rich electronic characteristics. Although the common metal chalcogenide phases such as 2H and 1T have been intensively studied, many other unusual phases are rarely explored, and some of these show fascinating behaviors including superconductivity, ferroelectrics, ferromagnetism, etc. From this perspective, the unusual phases of metal chalcogenides and their characteristics, as well as potential applications are introduced. First, the unusual phases of metal chalcogenides from different classes, including transition metal dichalcogenides, magnetic element-based chalcogenides, and metal phosphorus chalcogenides, are discussed, respectively. Meanwhile, their excellent properties of different unusual phases are introduced. Then, the methods for producing the unusual phases are discussed, specifically, the stabilization strategies during the chemical vapor deposition process for the unusual phase growth are discussed, followed by an outlook and discussions on how to prepare the unusual phase metal dichalcogenides in terms of synthetic methodology and potential applications.

Two-Dimensional Superconductivity of Ca-Intercalated Graphene on SiC: Vital Role of the Interface between Monolayer Graphene and the Substrate

Ca-intercalation has enabled superconductivity in graphene on SiC. However, the atomic and electronic structures that are critical for superconductivity are still under discussion. We find an essential role of the interface between monolayer graphene and the SiC substrate for superconductivity. In the Ca-intercalation process, at the interface a carbon layer terminating SiC changes to graphene by Ca-termination of SiC (monolayer graphene becomes a bilayer), inducing more electrons than a free-standing model. Then, Ca is intercalated in between the graphene layers, which shows superconductivity with the updated critical temperature (T_C) of up to 5.7 K. In addition, the relation between T_C and the normal-state conductivity is unusual, "dome-shaped". These findings are beyond the simple C₆CaC₆ model in which s-wave BCS superconductivity is theoretically predicted. This work proposes a general picture of the intercalation-induced superconductivity in graphene on SiC and indicates the potential for superconductivity induced by other intercalants.

Electronegativity-Induced Charge Balancing to Boost Stability and Activity of Amorphous Electrocatalysts

Amorphization is an efficient strategy to activate intrinsically inert catalysts. However, the low crystallinity of amorphous catalysts often causes high solubility and poor electrochemical stability in aqueous solution. Here, a different mechanism is developed to simultaneously stabilize and activate the water-soluble amorphous MoS_x O_y via a charge-balancing strategy, which is induced by different electronegativity between the co-dopants Rh (2.28) and Sn (1.96). The electron-rich Sn prefers to stabilize the unstable apical O sites in MoS_x O_y through charge transfer, which can prevent the H from attacking. Meanwhile, the Rh, as the charge regulator, shifts the main active sites on the basal plane from inert Sn to active apical Rh sites. As a result, the amorphous RhSn-MoS_x O_y exhibits drastic enhancement in electrochemical stability (η₁₀ increases only by 12 mV) after 1000 cycles and a distinct activity (η₁₀ : 26 mV and Tafel: 30.8 mV dec^-1 ) for the hydrogen evolution reaction in acidic solution. This work paves a route for turning impracticably water-soluble catalysts into treasure and inspires new ideas to design high-performance amorphous electrocatalysts.

Synthesis of bilayer borophene

As the nearest-neighbour element to carbon, boron is theoretically predicted to have a planar two-dimensional form, named borophene, with novel properties, such as Dirac fermions and superconductivity. Several polymorphs of monolayer borophene have been grown on metal surfaces, yet thicker bilayer and few-layer nanosheets remain elusive. Here we report the synthesis of large-size, single-crystalline bilayer borophene on the Cu(111) surface by molecular beam epitaxy. Combining scanning tunnelling microscopy and first-principles calculations, we show that bilayer borophene consists of two stacked monolayers that are held together by covalent interlayer boron-boron bonding, and each monolayer has β₁₂-like structures with zigzag rows. The formation of a bilayer is associated with a large transfer and redistribution of charge in the first boron layer on Cu(111), which provides additional electrons for the bonding of additional boron atoms, enabling the growth of the second layer. The bilayer borophene is shown to possess metallic character, and be less prone to being oxidized than its monolayer counterparts.

Recent Progress in Two-Dimensional MoTe2 Hetero-Phase Homojunctions

With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growing attention in recent years. In particular, MoTe₂ exhibits intriguing properties and its phase is easily altered from semiconducting 2H to metallic 1T' and vice versa, owing to the extremely small energy barrier between these two phases. MoTe₂ thus finds potential applications in electronics as a representative 2D material with multiple phases. In this review, we briefly summarize recent progress in 2D MoTe₂ hetero-phase homojunctions. We first introduce the properties of the diverse phases of MoTe₂, demonstrate the approaches to the construction of 2D MoTe₂ hetero-phase homojunctions, and then show the applications of the homojunctions. Lastly, we discuss the prospects and challenges in this research field.

Extrinsic and Intrinsic Anomalous Metallic States in Transition Metal Dichalcogenide Ising Superconductors

The metallic ground state in two-dimensional (2D) superconductors has attracted much attention but is still under intense scrutiny. Especially, the measurements in the ultralow temperature region are challenging for 2D superconductors due to the sensitivity to external perturbations. In this work, the resistance saturation induced by external noise, named as the "extrinsic anomalous metallic state", is observed in 2D transition metal dichalcogenide (TMD) superconductor 4Ha-TaSe₂ nanodevices. However, with further decreasing temperature, credible evidence of the intrinsic anomalous metallic state is obtained by adequately filtering external radiation. Our work indicates that, at ultralow temperatures, the anomalous metallic state can be experimentally revealed as the quantum ground state in 2D crystalline TMD superconductors. Besides, Ising superconductivity revealed by ultrahigh in-plane critical field (B_c2∥) going beyond the Pauli paramagnetic limit (B_p) is detected in 4Ha-TaSe₂, from the one-unit-cell device to the bulk situation, which might be due to the weak coupling between the TaSe₂ submonolayers.

Topical review: recent progress of charge density waves in 2D transition metal dichalcogenide-based heterojunctions and their applications

Charge density wave (CDW) is an intriguing physical phenomenon especially found in two-dimensional (2D) layered systems such as transition-metal dichalcogenides (TMDs). The study of CDW is vital for understanding lattice modification, strongly correlated electronic behaviors, and other related physical properties. This paper gives a review of the recent studies on CDW emerging in 2D TMDs. First, a brief introduction and the main mechanisms of CDW are given. Second, the interplay between CDW patterns and the related unique electronic phenomena (superconductivity, spin, and Mottness) is elucidated. Then various manipulation methods such as doping, applying strain, local voltage pulse to induce the CDW change are discussed. Finally, examples of the potential application of devices based on CDW materials are given. We also discuss the current challenge and opportunities at the frontier in this research field.

MoTe2: Semiconductor or Semimetal?

Transition metal tellurides (TMTs) have attracted intense interest due to their intriguing physical properties arising from their diverse phase topologies. To date, a wide range of physical properties have been discovered for TMTs, including that they can act as topological insulators, semiconductors, Weyl semimetals, and superconductors. Among the TMT families, MoTe₂ is a representative material because of its Janus nature and rich phases. In this Perspective, we first introduce phase structures in monolayer and bulk MoTe₂ and then summarize MoTe₂ synthesis strategies. We highlight recent advances of Janus MoTe₂ in terms of material structures and emerging quantum states. We also provide insight into the opportunities and challenges faced by MoTe₂-associated device design and applications.

Immobilized Precursor Particle Driven Growth of Centimeter-Sized MoTe2 Monolayer

Molybdenum ditelluride (MoTe₂) has attracted ever-growing attention in recent years due to its novel characteristics in spintronics and phase-engineering, and an efficient and convenient method to achieve large-area high-quality film is an essential step toward electronic applications. However, the growth of large-area monolayer MoTe₂ is challenging. Here, for the first time, we achieve the growth of a centimeter-sized monoclinic MoTe₂ monolayer and manifest the mechanism of immobilized precursor particle driven growth. Microscopic characterizations reveal an obvious trend of immobilized precursor particles being consumed by the monolayer and continuing to provide a source for the growth of the monolayer. Time-of-flight secondary ion mass spectrometry verifies the attachment of hydroxide ions on the surface of the MoTe₂ monolayer, thereby realizing the inhibition of crystal growth along the [001] zone axis and the continuous growth of the MoTe₂ monolayer. The first-principles DFT calculations prove the mechanism of immobilized precursor particles and the absorption of hydroxide ions on the MoTe₂ monolayer. The as-grown MoTe₂ monolayer exhibits a surface roughness of 0.19 nm and average conductivity of 1.5 × 10^-5 S/m, which prove the smoothness and uniformity of the MoTe₂ monolayer. Temperature-dependent electrical measurements together with the transfer characteristic curves further demonstrate the typical semimetallic properties of monoclinic MoTe₂. Our research elaborates the microscopic process of immobilized precursor particles to grow large-area MoTe₂ monolayer and provides a new thinking about the growth of many other two-dimensional materials.

Metastable 1T'-phase group VIB transition metal dichalcogenide crystals

Metastable 1T'-phase transition metal dichalcogenides (1T'-TMDs) with semi-metallic natures have attracted increasing interest owing to their uniquely distorted structures and fascinating phase-dependent physicochemical properties. However, the synthesis of high-quality metastable 1T'-TMD crystals, especially for the group VIB TMDs, remains a challenge. Here, we report a general synthetic method for the large-scale preparation of metastable 1T'-phase group VIB TMDs, including WS₂, WSe₂, MoS₂, MoSe₂, WS_2xSe_2(1-x) and MoS_2xSe_2(1-x). We solve the crystal structures of 1T'-WS₂, -WSe₂, -MoS₂ and -MoSe₂ with single-crystal X-ray diffraction. The as-prepared 1T'-WS₂ exhibits thickness-dependent intrinsic superconductivity, showing critical transition temperatures of 8.6 K for the thickness of 90.1 nm and 5.7 K for the single layer, which we attribute to the high intrinsic carrier concentration and the semi-metallic nature of 1T'-WS₂. This synthesis method will allow a more systematic investigation of the intrinsic properties of metastable TMDs.

Controlled Synthesis of MoxW1-xTe2 Atomic Layers with Emergent Quantum States

Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe₂, WTe₂, and alloyed Mo_xW_1-xTe_2. However, the behaviors in the alloy system have been rarely addressed due to their difficulty in obtaining atomic layers with controlled composition, albeit the alloy offers a great platform to tune the quantum states. Here, we report a facile CVD method to synthesize the Mo_xW_1-xTe₂ with controllable thickness and chemical composition ratios. The atomic structure of a monolayer Mo_xW_1-xTe₂ alloy was experimentally confirmed by scanning transmission electron microscopy. Importantly, two different transport behaviors including superconducting and Weyl semimetal states were observed in Mo-rich Mo_0.8W_0.2Te₂ and W-rich Mo_0.2W_0.8Te₂ samples, respectively. Our results show that the electrical properties of Mo_xW_1-xTe₂ can be tuned by controlling the chemical composition, demonstrating our controllable CVD growth method is an efficient strategy to manipulate the physical properties of TMDCs. Meanwhile, it provides a perspective on further comprehension and sheds light on the design of devices with topological multicomponent TMDC materials.

Metallic Transition Metal Dichalcogenides of Group VIB: Preparation, Stabilization, and Energy Applications

Layered transition metal dichalcogenides (TMDs) of group VIB have been widely used in the realms of energy storage and conversions. Along with the existence of semiconducting states, their metallic phases have recently attracted numerous attentions owing to their fascinating physical and chemical properties. Many efforts have been devoted to obtain metallic TMDs with high purity and yield. Nevertheless, such metallic phase is thermodynamically metastable and tends to convert into semiconducting phase, which necessitates the exploration over effective strategies to ensure the stability. In this review, typical fabrication routes are introduced and those critical factors during preparation are elaborately discussed. Moreover, the stabilized strategies are summarized with concrete examples highlighting the key mechanisms toward efficient stabilization. Finally, emerging energy applications are overviewed. This review presents comprehensive research status of metallic group VIB TMDs, aiming to facilitate further scientific investigations and promote future practical applications in the fields of energy storage and conversion.

Recent Advances in 2D Superconductors

The emergence of superconductivity in 2D materials has attracted much attention and there has been rapid development in recent years because of their fruitful physical properties, such as high transition temperature (T_c ), continuous phase transition, and enhanced parallel critical magnetic field (B_c ). Tremendous efforts have been devoted to exploring different physical parameters to figure out the mechanisms behind the unexpected superconductivity phenomena, including adjusting the thickness of samples, fabricating various heterostructures, tuning the carrier density by electric field and chemical doping, and so on. Here, different types of 2D superconductivity with their unique characteristics are introduced, including the conventional Bardeen-Cooper-Schrieffer superconductivity in ultrathin films, high-T_c superconductivity in Fe-based and Cu-based 2D superconductors, unconventional superconductivity in newly discovered twist-angle bilayer graphene, superconductivity with enhanced B_c , and topological superconductivity. A perspective toward this field is then proposed based on academic knowledge from the recently reported literature. The aim is to provide researchers with a clear and comprehensive understanding about the newly developed 2D superconductivity and promote the development of this field much further.

One-dimensional weak antilocalization effect in 1T'-MoTe2nanowires grown by chemical vapor deposition

We present a chemical vapor deposition method for the synthesizing of single-crystal 1T'-MoTe₂nanowires and the observation of one-dimensional weak antilocalization effect in 1T'-MoTe₂nanowires for the first time. The diameters of the 1T'-MoTe₂nanowires can be controlled by changing the flux of H₂/Ar carrier gas. Spherical-aberration-corrected transmission electron microscopy, selected area electron diffraction and energy dispersive x-ray spectroscopy (EDS) reveal the 1T' phase and the atomic ratio of Te/Mo closing to 2:1. The resistivity of 1T'-MoTe₂nanowires shows metallic behavior and agrees well with the Fermi liquid theory (<20 K). The coherence length extracted from 1D Hikami-Larkin-Nagaoka model with the presence of strong spin-orbit coupling is proportional toT^-0.36, indicating a Nyquist electron-electron interaction dephasing mechanism at one dimension. These results provide a feasible way to prepare one-dimensional topological materials and is promising for fundamental study of the transport properties.

Enhanced Superconductivity in Monolayer Td-MoTe2

Crystalline two-dimensional (2D) superconductors (SCs) with low carrier density are an exciting new class of materials in which electrostatic gating can tune superconductivity, electronic interactions play a prominent role, and electrical transport properties may directly reflect the topology of the Fermi surface. Here, we report the dramatic enhancement of superconductivity with decreasing thickness in semimetallic T_d-MoTe₂, with critical temperature (T_c) increasing up to 7.6 K for monolayers, a 60-fold increase with respect to the bulk T_c. We show that monolayers possess a similar electronic structure and density of states (DOS) as the bulk, implying that electronic interactions play a strong role in the enhanced superconductivity. Reflecting the low carrier density, the critical temperature, magnetic field, and current density are all tunable by an applied gate voltage. The response to high in-plane magnetic fields is distinct from that of other 2D SCs and reflects the canted spin texture of the electron pockets.

Structural Phase Transition and Interlayer Coupling in Few-Layer 1T' and Td MoTe2

We performed polarized Raman spectroscopy on mechanically exfoliated few-layer MoTe₂ samples and observed both 1T' and T_d phases at room temperature. Few-layer 1T' and T_d MoTe₂ exhibited a significant difference especially in interlayer vibration modes, from which the interlayer coupling strengths were extracted using the linear chain model: strong in-plane anisotropy was observed in both phases. Furthermore, temperature-dependent Raman measurements revealed a peculiar phase transition behavior in few-layer 1T' MoTe₂. In contrast to bulk 1T' MoTe₂ crystals, where the phase transition to the T_d phase occurs at ∼250 K, the temperature-driven phase transition to the T_d phase is increasingly suppressed as the thickness is reduced, and the transition and the critical temperature varied dramatically from sample to sample even for the same thickness. Raman spectra of intermediate phases that correspond to neither 1T' nor T_d phase with different interlayer vibration modes were observed, which suggests that several metastable phases exist with similar total energies.

Signatures of nontrivial Rashba metal states in a transition metal dichalcogenides Josephson junction

Nontrivial Rashba metal states in conventional semiconductor materials generated by both Rashba spin-orbit coupling and ferromagnetic exchange coupling coexisting were recently predicted and exploited. Single layered transition metal dichalcogenides (TMDC) featuring those states and their potential applications have been less focused. We find that, in the materials with Rashba spin-orbit coupling only, nontrivial Rashba metallic states can be manipulated by an external gate voltage. Based on extensive numerical simulations, the relationships between the supercurrent and nontrivial Rashba metallic states in the TMDC Josephson junction have been investigated. It is shown that, in the absence of the Rashba spin-orbit coupling, the critical supercurrent exhibits a stark difference between normal Rashba metal state and anomalous Rashba metal state in the finite junction as compared to the case of the short junction. While in the case of the finite Rashba spin-orbit coupling, the critical supercurrent demonstrates a reentrant behavior when Fermi level sweeps from anomalous Rashba metal state to Rashba ring metal state. Intriguingly, not only at the conversion of the nontrivial Rashba metallic states but also in the Rashba ring metal state the reentrant behavior exhibits again, which could be well explained by the mixing of spin-triplet Cooper pairs with spin-singlet Cooper pairs in Ising superconductor. Such a reentrant effect offers a new way to detect Ising superconductivity based on the TMDC systems. Meanwhile our study also clarified that the nontrivial Rashba metallic state plays an important role in controlling the supercurrent in the TMDC Josephson junction, which is useful for designing future superconducting devices.

Coexistence of large conventional and planar spin Hall effect with long spin diffusion length in a low-symmetry semimetal at room temperature

The spin Hall effect (SHE) is usually observed as a bulk effect in high-symmetry crystals with substantial spin-orbit coupling (SOC), where the symmetric spin-orbit field imposes a widely encountered trade-off between spin Hall angle (θ_SH) and spin diffusion length (L_sf), and spin polarization, spin current and charge current are constrained to be mutually orthogonal. Here, we report a large θ_SH of 0.32 accompanied by a long L_sf of 2.2 μm at room temperature in a low-symmetry few-layered semimetal MoTe₂, thus identifying it as an excellent candidate for simultaneous spin generation, transport and detection. In addition, we report that longitudinal spin current with out-of-plane polarization can be generated by both transverse and vertical charge current, due to the conventional and a newly observed planar SHE, respectively. Our study suggests that manipulation of crystalline symmetries and strong SOC opens access to new charge-spin interconversion configurations and spin-orbit torques for spintronic applications.

Retro-normal reflection and specular Andreev reflection in a transition metal dichalcogenides superconducting heterojunction

Based on the Bogoliubov-de Gennes equation, the spin-resolved scattering problem through a transition metal dichalcogenides normal metal/superconductor has been investigated. It is shown that the tunneling conductances have a close relationship with the nontrivial Rashba metallic states. Without the Rashba spin-orbit interaction (RSOI), the tunneling conductances exhibit clear characteristic features for detecting the normal Rashba metal state (NRMS) and the anomalous Rashba metal state (ARMS). While in the presence of RSOI, the oscillation, hump structure, and the reentrant behavior of the tunneling conductances can be served as a smoking gun to distinguish the Rashba ring metal state (RRMS) from those nontrivial metallic states. Fundamentally, in sharp contrast to the NRMS and the ARMS where only the normal reflection and the retro-Andreev reflection can occur, the additional scattering processes of the retro-normal reflection (RNR) and the specular Andreev reflection (SAR) can take place in the present junction with the RRMS. Thus the obtained results offer a feasible way to determine the RNR, the SAR, and the nontrivial Rashba metallic states based on the transition metal dichalcogenides superconducting heterojunction.

In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects

Low-symmetry layered materials such as black phosphorus (BP) have been revived recently due to their high intrinsic mobility and in-plane anisotropic properties, which can be used in anisotropic electronic and optoelectronic devices. Since the anisotropic properties have a close relationship with their anisotropic structural characters, especially for materials with low-symmetry, exploring new low-symmetry layered materials and investigating their anisotropic properties have inspired numerous research efforts. In this paper, we review the recent experimental progresses on low-symmetry layered materials and their corresponding anisotropic electrical transport, magneto-transport, optoelectronic, thermoelectric, ferroelectric, and piezoelectric properties. The boom of new low-symmetry layered materials with high anisotropy could open up considerable possibilities for next-generation anisotropic multifunctional electronic devices.

Phase Transition and Superconductivity Enhancement in Se-Substituted MoTe2 Thin Films

Consecutively tailoring few-layer transition metal dichalcogenides MX₂ from 2H to T_d phase may realize the long-sought topological superconductivity in a single material system by incorporating superconductivity and the quantum spin Hall effect together. Here, this study demonstrates that a consecutive structural phase transition from T_d to 1T' to 2H polytype can be realized by increasing the Se concentration in Se-substituted MoTe₂ thin films. More importantly, the Se-substitution is found to dramatically enhance the superconductivity of the MoTe₂ thin film, which is interpreted as the introduction of two-band superconductivity. The chemical-constituent-induced phase transition offers a new strategy to study the s^+- superconductivity and the possible topological superconductivity, as well as to develop phase-sensitive devices based on MX₂ materials.