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Choi J, Crust KJ, Li L, Lee K, Luo J, So JP, Watanabe K, Taniguchi T, Hwang HY, Mak KF, Shan J, Fuchs GD. Tuning Exciton Emission via Ferroelectric Polarization at a Heterogeneous Interface between a Monolayer Transition Metal Dichalcogenide and a Perovskite Oxide Membrane. NANO LETTERS 2024; 24:8948-8955. [PMID: 38996059 DOI: 10.1021/acs.nanolett.4c01853] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/14/2024]
Abstract
We demonstrate the integration of a thin BaTiO3 (BTO) membrane with monolayer MoSe2 in a dual-gate device that enables in situ manipulation of the BTO ferroelectric polarization with a voltage pulse. While two-dimensional (2D) transition metal dichalcogenides (TMDs) offer remarkable adaptability, their hybrid integration with other families of functional materials beyond the realm of 2D materials has been challenging. Released functional oxide membranes offer a solution for 2D/3D integration via stacking. 2D TMD excitons can serve as a local probe of the ferroelectric polarization in BTO at a heterogeneous interface. Using photoluminescence (PL) of MoSe2 excitons to optically read out the doping level, we find that the relative population of charge carriers in MoSe2 depends sensitively on the ferroelectric polarization. This finding points to a promising avenue for future-generation versatile sensing devices with high sensitivity, fast readout, and diverse applicability for advanced signal processing.
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Affiliation(s)
- Jaehong Choi
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
| | - Kevin J Crust
- Department of Physics, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Lizhong Li
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
| | - Kihong Lee
- Department of Physics, Cornell University, Ithaca, New York 14850, United States
| | - Jialun Luo
- Department of Physics, Cornell University, Ithaca, New York 14850, United States
| | - Jae-Pil So
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Harold Y Hwang
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
| | - Kin Fai Mak
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
- Department of Physics, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
| | - Jie Shan
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
- Department of Physics, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
| | - Gregory D Fuchs
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14850, United States
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2
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Bai C, Wu G, Yang J, Zeng J, Liu Y, Wang J. 2D materials-based photodetectors combined with ferroelectrics. NANOTECHNOLOGY 2024; 35:352001. [PMID: 38697050 DOI: 10.1088/1361-6528/ad4652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Accepted: 05/01/2024] [Indexed: 05/04/2024]
Abstract
Photodetectors are essential optoelectronic devices that play a critical role in modern technology by converting optical signals into electrical signals, which are one of the most important sensors of the informational devices in current 'Internet of Things' era. Two-dimensional (2D) material-based photodetectors have excellent performance, simple design and effortless fabrication processes, as well as enormous potential for fabricating highly integrated and efficient optoelectronic devices, which has attracted extensive research attention in recent years. The introduction of spontaneous polarization ferroelectric materials further enhances the performance of 2D photodetectors, moreover, companying with the reduction of power consumption. This article reviews the recent advances of materials, devices in ferroelectric-modulated photodetectors. This review starts with the introduce of the basic terms and concepts of the photodetector and various ferroelectric materials applied in 2D photodetectors, then presents a variety of typical device structures, fundamental mechanisms and potential applications under ferroelectric polarization modulation. Finally, we summarize the leading challenges currently confronting ferroelectric-modulated photodetectors and outline their future perspectives.
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Affiliation(s)
- Chongyang Bai
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Guangjian Wu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Jing Yang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, People's Republic of China
| | - Jinhua Zeng
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Yihan Liu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Jianlu Wang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
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3
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Yan Z, Xu N, Deng S. AC Characteristics of van der Waals Bipolar Junction Transistors Using an MoS 2/WSe 2/MoS 2 Heterostructure. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:851. [PMID: 38786807 PMCID: PMC11123697 DOI: 10.3390/nano14100851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2024] [Revised: 05/04/2024] [Accepted: 05/11/2024] [Indexed: 05/25/2024]
Abstract
Two-dimensional layered materials, characterized by their atomically thin thicknesses and surfaces that are free of dangling bonds, hold great promise for fabricating ultrathin, lightweight, and flexible bipolar junction transistors (BJTs). In this paper, a van der Waals (vdW) BJT was fabricated by vertically stacking MoS2, WSe2, and MoS2 flakes in sequence. The AC characteristics of the vdW BJT were studied for the first time, in which a maximum common emitter voltage gain of around 3.5 was observed. By investigating the time domain characteristics of the device under various operating frequencies, the frequency response of the device was summarized, which experimentally proved that the MoS2/WSe2/MoS2 BJT has voltage amplification capability in the 0-200 Hz region. In addition, the phase response of the device was also investigated. A phase inversion was observed in the low-frequency range. As the operating frequency increases, the relative phase between the input and output signals gradually shifts until it is in phase at frequencies exceeding 2.3 kHz. This work demonstrates the signal amplification applications of the vdW BJTs for neuromorphic computing and wearable healthcare devices.
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Affiliation(s)
| | | | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China; (Z.Y.); (N.X.)
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4
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Meng G, She J, Yu H, Li Q, Liu X, Yin Z, Cheng Y. Polarizable Nonvolatile Ferroelectric Gating in Monolayer MoS 2 Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:10316-10324. [PMID: 38381062 DOI: 10.1021/acsami.3c15533] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Given the requirements for power and dimension scaling, modulating channel transport properties using high gate bias is unfavorable due to the introduction of severe leakages and large power dissipation. Hence, this work presents an ultrathin phototransistor with chemical-vapor-deposition-grown monolayer MoS2 as the channel and a 10.2 nm thick Al:HfO2 ferroelectric film as the dielectric. The proposed device is meticulously modulated utilizing an Al:HfO2 nanofilm, which passivates traps and suppresses charge Coulomb scattering with Al doping, efficiently improving carrier transport and inhibiting leakage current. Furthermore, a bipolar pulses excitable polarization method is developed to induce a nonvolatile electrostatic field. The MoS2 channel is fully depleted by the switchable and stable floating gate originating from remanent polarization, leading to a high detectivity of 2.05 × 1011 Jones per nanometer of gating layer (Jones nm-1) and photocurrent on/off ratio >104 nm-1, which are superior to the state-of-the-art phototransistors based on two-dimensional (2D) materials and ferroelectrics. The proposed polarizable nonvolatile ferroelectric gating in a monolayer MoS2 phototransistor promises a potential route toward ultrasensitive photodetectors with low power consumption that boast of high levels of integration.
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Affiliation(s)
- Guodong Meng
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Junyi She
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hao Yu
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Qiang Li
- School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xin Liu
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zongyou Yin
- Research School of Chemistry, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yonghong Cheng
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
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Shi X, Liu C, Zhang X, Zhan G, Cai Y, Zhou D, Zhao Y, Wang N, Hu F, Wang X, Ma H, Wang L. Vapor Phase Growth of Air-Stable Hybrid Perovskite FAPbBr 3 Single-Crystalline Nanosheets. NANO LETTERS 2024; 24:2299-2307. [PMID: 38334593 DOI: 10.1021/acs.nanolett.3c04604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Organic-inorganic hybrid perovskites have attracted tremendous attention owing to their fascinating optoelectronic properties. However, their poor air stability seriously hinders practical applications, which becomes more serious with thickness down to the nanoscale. Here we report a one-step vapor phase growth of HC(NH2)2PbBr3 (FAPbBr3) single-crystalline nanosheets of tunable size up to 50 μm and thickness down to 20 nm. The FAPbBr3 nanosheets demonstrate high stability for over months of exposure to air with no degradation in surface roughness and photoluminescence efficiency. Besides, the FAPbBr3 photodetectors exhibit superior overall performance as compared to previous devices based on nonlayered perovskite nanosheets, such as an ultralow dark current of 24 pA, an ultrahigh responsivity of 1033 A/W, an external quantum efficiency over 3000%, a rapid response time around 25 ms, and a high on/off ratio of 104. This work provides a strategy to tackle the challenges of hybrid perovskites toward integrated optoelectronics with requirements of nanoscale thickness, high stability, and excellent performance.
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Affiliation(s)
- Xinyu Shi
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Chao Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Xiaomin Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Guixiang Zhan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Yuxiao Cai
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Yuwei Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Nana Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Fengrui Hu
- School of Physics, College of Engineering and Applied Sciences, MOE Key Laboratory of Intelligent Optical Sensing and Manipulation, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xiaoyong Wang
- School of Physics, College of Engineering and Applied Sciences, MOE Key Laboratory of Intelligent Optical Sensing and Manipulation, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Huifang Ma
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing 211816, China
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6
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Liu J, Su L, Zhang X, Shtansky DV, Fang X. Ferroelectric-Optoelectronic Hybrid System for Photodetection. SMALL METHODS 2024; 8:e2300319. [PMID: 37312397 DOI: 10.1002/smtd.202300319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2023] [Revised: 04/28/2023] [Indexed: 06/15/2023]
Abstract
Photodetectors (PDs), as functional devices based on photon-to-electron conversion, are an indispensable component for the next-generation Internet of Things system. The research of advanced and efficient PDs that meet the diverse demands is becoming a major task. Ferroelectric materials can develop a unique spontaneous polarization due to the symmetry-breaking of the unit cell, which is switchable under an external electric field. Ferroelectric polarization field has the intrinsic characteristics of non-volatilization and rewritability. Introducing ferroelectrics to effectively manipulate the band bending and carrier transport can be non-destructive and controllable in the ferroelectric-optoelectronic hybrid systems. Hence, ferroelectric integration offers a promising strategy for high-performance photoelectric detection. This paper reviews the fundamentals of optoelectronic and ferroelectric materials, and their interactions in hybrid photodetection systems. The first section introduces the characteristics and applications of typical optoelectronic and ferroelectric materials. Then, the interplay mechanisms, modulation effects, and typical device structures of ferroelectric-optoelectronic hybrid systems are discussed. Finally, in summary and perspective section, the progress of ferroelectrics integrated PDs is summed up and the challenges of ferroelectrics in the field of optoelectronics are considered.
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Affiliation(s)
- Jie Liu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Li Su
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Xinglong Zhang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Dmitry V Shtansky
- National University of Science and Technology "MISIS", Moscow, 119049, Russia
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
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7
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Liu Q, Cui S, Bian R, Pan E, Cao G, Li W, Liu F. The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications. ACS NANO 2024; 18:1778-1819. [PMID: 38179983 DOI: 10.1021/acsnano.3c05711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.
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Affiliation(s)
- Qing Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Silin Cui
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Renji Bian
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Er Pan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, 615013 Xi'an, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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8
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Wang F, Zhang T, Xie R, Liu A, Dai F, Chen Y, Xu T, Wang H, Wang Z, Liao L, Wang J, Zhou P, Hu W. Next-Generation Photodetectors beyond Van Der Waals Junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301197. [PMID: 36960667 DOI: 10.1002/adma.202301197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/16/2023] [Indexed: 06/18/2023]
Abstract
With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anna Liu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Liao
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jianlu Wang
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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9
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Hu L, Li X, Guo X, Xu M, Shi Y, Herve NB, Xiang R, Zhang Q. Electret Modulation Strategy to Enhance the Photosensitivity Performance of Two-Dimensional Molybdenum Sulfide. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59704-59713. [PMID: 38087993 DOI: 10.1021/acsami.3c14836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Due to the limited light absorption efficiency of atomic thickness layers and the existence of quenching effects, photodetectors solely made of transition metal dichalcogenides (TMDs) have exhibited an unsatisfactory detection performance. In this article, electret/TMD hybridized devices were proposed by vertically coupling a MoS2 channel and the PTFE film, which reveals an optimized photodetection behavior. Negative charges were generated in the PTFE layer through the corona charging method, akin to applying a negative bias on the MoS2 channel in lieu of a traditional voltage-driven back gate. Under a charging voltage of -6 kV, PTFE/MoS2 devices reveal improved photodetection performance (Rhybrid = 67.95A/W versus Ronly = 3.37 A/W, at 470 nm, 1.20 mW cm-2) and faster recovery speed (τd(hybrid) = 2000 ms versus τd(only) = 2900 ms) compared to those bare MoS2 counterparts. The optimal detection performance (2 orders of magnitude) was obtained when the charging voltage was -2 kV, limited by the minimum of the carrier density in MoS2 channels. This study provides an alternative strategy to optimize optoelectronic devices based on the 2D components through non-voltage-driven gating.
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Affiliation(s)
- Lian Hu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Xin Li
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xinyu Guo
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Minxuan Xu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Yueqin Shi
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Nduwarugira B Herve
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
| | - Rong Xiang
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
| | - Qi Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
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10
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Xu M, Chen X, Guo Y, Wang Y, Qiu D, Du X, Cui Y, Wang X, Xiong J. Reconfigurable Neuromorphic Computing: Materials, Devices, and Integration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301063. [PMID: 37285592 DOI: 10.1002/adma.202301063] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2023] [Revised: 05/15/2023] [Indexed: 06/09/2023]
Abstract
Neuromorphic computing has been attracting ever-increasing attention due to superior energy efficiency, with great promise to promote the next wave of artificial general intelligence in the post-Moore era. Current approaches are, however, broadly designed for stationary and unitary assignments, thus encountering reluctant interconnections, power consumption, and data-intensive computing in that domain. Reconfigurable neuromorphic computing, an on-demand paradigm inspired by the inherent programmability of brain, can maximally reallocate finite resources to perform the proliferation of reproducibly brain-inspired functions, highlighting a disruptive framework for bridging the gap between different primitives. Although relevant research has flourished in diverse materials and devices with novel mechanisms and architectures, a precise overview remains blank and urgently desirable. Herein, the recent strides along this pursuit are systematically reviewed from material, device, and integration perspectives. At the material and device level, one comprehensively conclude the dominant mechanisms for reconfigurability, categorized into ion migration, carrier migration, phase transition, spintronics, and photonics. Integration-level developments for reconfigurable neuromorphic computing are also exhibited. Finally, a perspective on the future challenges for reconfigurable neuromorphic computing is discussed, definitely expanding its horizon for scientific communities.
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Affiliation(s)
- Minyi Xu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xinrui Chen
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yehao Guo
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xinchuan Du
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yi Cui
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Xianfu Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China
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11
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Han S, Xia CJ, Li M, Zhao XM, Zhang GQ, Li LB, Su YH, Fang QL. Interfacial electronic states and self-formed asymmetric Schottky contacts in polar α-In 2Se 3/Au contacts. Sci Rep 2023; 13:19228. [PMID: 37932366 PMCID: PMC10628281 DOI: 10.1038/s41598-023-46514-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/29/2023] [Accepted: 11/02/2023] [Indexed: 11/08/2023] Open
Abstract
In recent years, the two-dimensional (2D) semiconductor α-In2Se3 has great potential for applications in the fields of electronics and optoelectronics due to its spontaneous iron electrolysis properties. Through ab initio electronic structure calculations and quantum transport simulations, the interface properties and transport properties of α-In2Se3/Au contacts with different polarization directions are studied, and a two-dimensional α-In2Se3 asymmetric metal contact design is proposed. When α-In2Se3 is polarized upward, it forms an n-type Schottky contact with Au. While when α-In2Se3 is polarized downward, it forms a p-type Schottky contact with Au. More importantly, significant rectification effect is found in the asymmetric Au/α-In2Se3/Au field-effect transistor. The carrier transports under positive and negative bias voltages are found to be dominated by thermionic excitation and tunneling, respectively. These findings provide guidance for the further design of 2D α-In2Se3-based transistors.
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Affiliation(s)
- Sha Han
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
| | - Cai-Juan Xia
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China.
- Engineering Research Center of Flexible Radiation Protection Technology, University of Shaanxi Province, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China.
- Xi'an Key Laboratory of Nuclear Protection Textile Equipment Technology, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China.
| | - Min Li
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
| | - Xu-Mei Zhao
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
| | - Guo-Qing Zhang
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
- Engineering Research Center of Flexible Radiation Protection Technology, University of Shaanxi Province, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
- Xi'an Key Laboratory of Nuclear Protection Textile Equipment Technology, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
| | - Lian-Bi Li
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
- Engineering Research Center of Flexible Radiation Protection Technology, University of Shaanxi Province, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
- Xi'an Key Laboratory of Nuclear Protection Textile Equipment Technology, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
| | - Yao-Heng Su
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
- Engineering Research Center of Flexible Radiation Protection Technology, University of Shaanxi Province, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
- Xi'an Key Laboratory of Nuclear Protection Textile Equipment Technology, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China
| | - Qing-Long Fang
- School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China.
- Engineering Research Center of Flexible Radiation Protection Technology, University of Shaanxi Province, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China.
- Xi'an Key Laboratory of Nuclear Protection Textile Equipment Technology, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China.
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12
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Yang W, Cheng B, Hou J, Deng J, Ding X, Sun J, Liu JZ. Writing-Speed Dependent Thresholds of Ferroelectric Domain Switching in Monolayer α-In 2 Se 3. SMALL METHODS 2023; 7:e2300050. [PMID: 37144659 DOI: 10.1002/smtd.202300050] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Revised: 03/19/2023] [Indexed: 05/06/2023]
Abstract
An electrical-biased or mechanical-loaded scanning probe written on the ferroelectric surface can generate programmable domain nanopatterns for ultra-scaled and reconfigurable nanoscale electronics. Fabricating ferroelectric domain patterns by direct-writing as quickly as possible is highly desirable for high response rate devices. Using monolayer α-In2 Se3 ferroelectric with ≈1.2 nm thickness and intrinsic out-of-plane polarization as an example, a writing-speed dependent effect on ferroelectric domain switching is discovered. The results indicate that the threshold voltages and threshold forces for domain switching can be increased from -4.2 to -5 V and from 365 to 1216 nN, respectively, as the writing-speed increases from 2.2 to 10.6 µm s-1 . The writing-speed dependent threshold voltages can be attributed to the nucleations of reoriented ferroelectric domains, in which sufficient time is needed for subsequent domain growth. The writing-speed dependent threshold forces can be attributed to the flexoelectric effect. Furthermore, the electrical-mechanical coupling can be employed to decrease the threshold force, achieving as low as ≈189±41 nN, a value smaller than those of perovskite ferroelectric films. Such findings reveal a critical issue of ferroelectric domain pattern engineering that should be carefully addressed for programmable direct-writing electronics applications.
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Affiliation(s)
- Weijie Yang
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Bo Cheng
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jianhua Hou
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Junkai Deng
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Xiangdong Ding
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jun Sun
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jefferson Zhe Liu
- Department of Mechanical Engineering, The University of Melbourne, Parkville, VIC, 3010, Australia
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13
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Wang H, Bao L, Guzman R, Wu K, Wang A, Liu L, Wu L, Chen J, Huan Q, Zhou W, Pantelides ST, Gao HJ. Ultrafast-Programmable 2D Homojunctions Based on van der Waals Heterostructures on a Silicon Substrate. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301067. [PMID: 37204321 DOI: 10.1002/adma.202301067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2023] [Revised: 04/15/2023] [Indexed: 05/20/2023]
Abstract
The development of electrically ultrafast-programmable semiconductor homojunctions can lead to transformative multifunctional electronic devices. However, silicon-based homojunctions are not programmable so that alternative materials need to be explored. Here 2D, multi-functional, lateral homojunctions made of van der Waals heterostructures with a semi-floating-gate configuration on a p++ Si substrate feature atomically sharp interfaces and can be electrostatically programmed in nanoseconds, more than seven orders of magnitude faster than other 2D-based homojunctions. By applying voltage pulses with different polarities, lateral p-n, n+ -n and other types of homojunctions can be formed, varied, and reversed. The p-n homojunctions possess a high rectification ratio of up to ≈105 and can be dynamically switched between four distinct conduction states with the current spanning over nine orders of magnitude, enabling them to function as logic rectifiers, memories, and multi-valued logic inverters. Built on a p++ Si substrate, which acts as the control gate, the devices are compatible with Si technology.
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Affiliation(s)
- Hao Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Lihong Bao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523830, P. R. China
| | - Roger Guzman
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Kang Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Aiwei Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Li Liu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Liangmei Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jiancui Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Qing Huan
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523830, P. R. China
| | - Wu Zhou
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Sokrates T Pantelides
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Department of Physics and Astronomy & Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, TN, 37235, USA
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences and CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523830, P. R. China
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14
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Liu Y, Guo W, Hua L, Zeng X, Yang T, Fan Q, Ma Y, Gao C, Sun Z, Luo J. Giant Polarization Sensitivity via the Anomalous Photovoltaic Effect in a Two-Dimensional Perovskite Ferroelectric. J Am Chem Soc 2023; 145:16193-16199. [PMID: 37462120 DOI: 10.1021/jacs.3c05020] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/27/2023]
Abstract
Polarization sensitivity, which shows great potential in photoelectric detection, is expected to be significantly improved by the ferroelectric anomalous photovoltaic (APV) effect. However, it is challenging to explore new APV-active ferroelectrics due to severe polarization fatigue induced by the leakage current of photoexcited carriers. For the first time, we report a strong APV effect in a 2D hybrid perovskite ferroelectric assembled by alloying mixed organic cations, (HA)2(EA)2Pb3Br10 (1, where HA+ is n-hexylammonium and EA+ is ethylammonium), which has a large spontaneous polarization ∼3.8 μC/cm2 and high a Curie temperature ∼378 K. Its ferroelectricity allows a strong APV effect with an above-bandgap photovoltage up to 7.4 V, which exceeds its bandgap (∼2.7 eV). Most strikingly, based on the dependence on polarized-light angle, this strong APV effect renders the highest level of polarization sensitivity with a giant current ratio of ∼25, far beyond other 2D single-phase materials. This study sheds light on the exploration of APV-active ferroelectrics and inspires their future high-performance optoelectronic device applications.
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Affiliation(s)
- Yi Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Wuqian Guo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
| | - Lina Hua
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Xi Zeng
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Tian Yang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Qingshun Fan
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Yu Ma
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
| | - Changhao Gao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
| | - Zhihua Sun
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, Fujian, People's Republic of China
| | - Junhua Luo
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, Fujian, People's Republic of China
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100039, People's Republic of China
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15
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He Z, Guan H, Liang X, Chen J, Xie M, Luo K, An R, Ma L, Ma F, Yang T, Lu H. Broadband, Polarization-Sensitive, and Self-Powered High-Performance Photodetection of Hetero-Integrated MoS 2 on Lithium Niobate. RESEARCH (WASHINGTON, D.C.) 2023; 6:0199. [PMID: 37484499 PMCID: PMC10357351 DOI: 10.34133/research.0199] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/10/2023] [Accepted: 07/03/2023] [Indexed: 07/25/2023]
Abstract
High-performance photodetectors hold promising potential in optical communication and imaging systems. However, conventional counterparts are suffering narrow detection range, high power consumption, and poor polarization sensitivity. Characteristics originating from switchable polarization in ferroelectrics can be used to optimize the photo-to-electric procedure and improve the photodetection performance. In this regard, we constructed a configuration by integrating 2-dimensional molybdenum disulfide (MoS2) with ferroelectric lithium niobate (LiNbO3), resulting in the MoS2/LiNbO3 heterostructured photodetector. Benefiting from the pyroelectric effect of LiNbO3, the limitation of bandgap on the detection range can be broken, thus broadening the response band of the detector to 365 to 1,064 nm, as well as enabling the self-powered characteristic. Meanwhile, high carrier mobility and decent light absorbance of MoS2 introduce robust light-matter interactions with the underlying LiNbO3, leading to ultrafast rise/fall times of ≈150 μs/250 μs and switching ratios of up to ≈190. Moreover, the highest responsivity, specific detectivity, and external quantum efficiency achieved were 17.3 A·W-1, 4.3 × 1011 Jones, and 4,645.78%, respectively. Furthermore, because of the anisotropy of the spontaneous-polarized LiNbO3 substrate, the photocurrent of the device achieved a dichroic ratio of 7.42, comparing favorably to most MoS2-based photodetectors. This work demonstrates the integration potential between ferroelectric LiNbO3 and 2-dimensional materials for high-performance photodetection.
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Affiliation(s)
- Zhigang He
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications,
Jinan University, Guangzhou 510632, China
| | - Heyuan Guan
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications,
Jinan University, Guangzhou 510632, China
| | - Xijie Liang
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications,
Jinan University, Guangzhou 510632, China
| | - Junteng Chen
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications,
Jinan University, Guangzhou 510632, China
- Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes,
Jinan University, Guangzhou 510632, China
| | - Manyan Xie
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications,
Jinan University, Guangzhou 510632, China
- Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes,
Jinan University, Guangzhou 510632, China
| | - Kaiwen Luo
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications,
Jinan University, Guangzhou 510632, China
- Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes,
Jinan University, Guangzhou 510632, China
| | - Ran An
- Institute of Fluid Physics,
China Academy of Engineering Physics, Mianyang 621900, China
| | - Liang Ma
- College of Physics and Electronic Engineering,
Hengyang Normal University, Hengyang 421008, China
| | - Fengkai Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications,
Jinan University, Guangzhou 510632, China
| | - Tiefeng Yang
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications,
Jinan University, Guangzhou 510632, China
| | - Huihui Lu
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications,
Jinan University, Guangzhou 510632, China
- Key Laboratory of Optoelectronic Information and Sensing Technologies of Guangdong Higher Education Institutes,
Jinan University, Guangzhou 510632, China
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16
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Zhou Y, Tong L, Chen Z, Tao L, Pang Y, Xu JB. Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents. Nat Commun 2023; 14:4270. [PMID: 37460531 DOI: 10.1038/s41467-023-39705-w] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 06/26/2023] [Indexed: 07/20/2023] Open
Abstract
Two-dimensional (2D) materials have been considered promising candidates for future low power-dissipation and reconfigurable integrated circuit applications. However, 2D transistors with intrinsic ambipolar transport polarity are usually affected by large off-state leakage currents and small on/off ratios. Here, we report the realization of a reconfigurable Schottky junction field-effect transistor (SJFET) in an asymmetric van der Waals contact geometry, showing a balanced and switchable n- and p-unipolarity with the Ids on/off ratio kept >106. Meanwhile, the static leakage power consumption was suppressed to 10-5 nW. The SJFET worked as a reversible Schottky rectifier with an ideality factor of ~1.0 and a tuned rectifying ratio from 3 × 106 to 2.5 × 10-6. This empowered the SJFET with a reconfigurable photovoltaic performance in which the sign of the open-circuit voltage and photo-responsivity were substantially switched. This polarity-reversible SJFET paves an alternative way to develop reconfigurable 2D devices for low-power-consumption photovoltaic logic circuits.
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Affiliation(s)
- Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Zefeng Chen
- School of Optoelectronic Science and Engineering and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, 215006, Suzhou, China
| | - Li Tao
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China
| | - Jian-Bin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, SAR, China.
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17
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Huang Z, Luo Z, Deng Z, Yang M, Gao W, Yao J, Zhao Y, Dong H, Zheng Z, Li J. Integration of Self-Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices. SMALL METHODS 2023; 7:e2201571. [PMID: 36932942 DOI: 10.1002/smtd.202201571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2022] [Revised: 02/20/2023] [Indexed: 06/09/2023]
Abstract
With the rapid development of two-dimensional semiconductor technology, the inevitable chemical disorder at a typical metal-semiconductor interface has become an increasingly serious problem that degrades the performance of 2D semiconductor optoelectronic devices. Herein, defect-free van der Waals contacts have been achieved by utilizing topological Bi2 Se3 as the electrodes. Such clean and atomically sharp contacts avoid the consumption of photogenerated carriers at the interface, enabling a markedly boosted sensitivity as compared to counterpart devices with directly deposited metal electrodes. Typically, the device with 2D WSe2 channel realizes a high responsivity of 20.5 A W-1 , an excellent detectivity of 2.18 × 1012 Jones, and a fast rise/decay time of 41.66/38.81 ms. Furthermore, high-resolution visible-light imaging capability of the WSe2 device is demonstrated, indicating its promising application prospect in future optoelectronic systems. More inspiringly, the topological electrodes are universally applicable to other 2D semiconductor channels, including WS2 and InSe, suggesting its broad applicability. These results open fascinating opportunities for the development of high-performance electronics and optoelectronics.
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Affiliation(s)
- Zihao Huang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Ziwen Deng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Wei Gao
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, Guangdong, 510275, P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Huafeng Dong
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jingbo Li
- School of Semiconductor Science and Technology, South China Normal University, Foshan, Guangdong, 528225, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P. R. China
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18
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Ji J, Yu G, Xu C, Xiang HJ. General Theory for Bilayer Stacking Ferroelectricity. PHYSICAL REVIEW LETTERS 2023; 130:146801. [PMID: 37084445 DOI: 10.1103/physrevlett.130.146801] [Citation(s) in RCA: 16] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Revised: 01/15/2023] [Accepted: 02/15/2023] [Indexed: 05/03/2023]
Abstract
Two-dimensional (2D) ferroelectrics, which are rare in nature, enable high-density nonvolatile memory with low energy consumption. Here, we propose a theory of bilayer stacking ferroelectricity (BSF), in which two stacked layers of the same 2D material, with different rotation and translation, exhibit ferroelectricity. By performing systematic group theory analysis, we find all the possible BSF in all 80 layer groups (LGs) and discover the rules about the creation and annihilation of symmetries in the bilayer. Our general theory can not only explain all the previous findings (including sliding ferroelectricity), but also provide a new perspective. Interestingly, the direction of the electric polarization of the bilayer could be totally different from that of the single layer. In particular, the bilayer could become ferroelectric after properly stacking two centrosymmetric nonpolar monolayers. By means of first-principles simulations, we predict that the ferroelectricity and thus multiferroicity can be introduced to the prototypical 2D ferromagnetic centrosymmetric material CrI_{3} by stacking. Furthermore, we find that the out-of-plane electric polarization in bilayer CrI_{3} is interlocked with the in-plane electric polarization, suggesting that the out-of-plane polarization can be manipulated in a deterministic way through the application of an in-plane electric field. The present BSF theory lays a solid foundation for designing a large number of bilayer ferroelectrics and thus colorful platforms for fundamental studies and applications.
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Affiliation(s)
- Junyi Ji
- Key Laboratory of Computational Physical Sciences (Ministry of Education), Institute of Computational Physical Sciences, and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute, Shanghai 200030, China
| | - Guoliang Yu
- Key Laboratory of Computational Physical Sciences (Ministry of Education), Institute of Computational Physical Sciences, and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute, Shanghai 200030, China
| | - Changsong Xu
- Key Laboratory of Computational Physical Sciences (Ministry of Education), Institute of Computational Physical Sciences, and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute, Shanghai 200030, China
| | - H J Xiang
- Key Laboratory of Computational Physical Sciences (Ministry of Education), Institute of Computational Physical Sciences, and Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Qi Zhi Institute, Shanghai 200030, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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19
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Bian Z, Miao J, Zhang T, Chen H, Zhu Q, Chai J, Tian F, Wu S, Xu Y, Yu B, Chai Y, Zhao Y. Carrier Modulation in 2D Transistors by Inserting Interfacial Dielectric Layer for Area-Efficient Computation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2206791. [PMID: 37010037 DOI: 10.1002/smll.202206791] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Revised: 03/05/2023] [Indexed: 06/19/2023]
Abstract
2D materials with atomic thickness display strong gate controllability and emerge as promising materials to build area-efficient electronic circuits. However, achieving the effective and nondestructive modulation of carrier density/type in 2D materials is still challenging because the introduction of dopants will greatly degrade the carrier transport via Coulomb scattering. Here, a strategy to control the polarity of tungsten diselenide (WSe2 ) field-effect transistors (FETs) via introducing hexagonal boron nitride (h-BN) as the interfacial dielectric layer is devised. By modulating the h-BN thickness, the carrier type of WSe2 FETs has been switched from hole to electron. The ultrathin body of WSe2 , combined with the effective polarity control, together contribute to the versatile single-transistor logic gates, including NOR, AND, and XNOR gates, and the operation of only two transistors as a half adder in logic circuits. Compared with the use of 12 transistors based on static Si CMOS technology, the transistor number of the half adder is reduced by 83.3%. The unique carrier modulation approach has general applicability toward 2D logic gates and circuits for the improvement of area efficiency in logic computation.
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Affiliation(s)
- Zheng Bian
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Jialei Miao
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Tianjiao Zhang
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Haohan Chen
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Qinghai Zhu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Jian Chai
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Feng Tian
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Shaoxiong Wu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Yuda Zhao
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, Hangzhou, 310027, China
- Key Laboratory of Optoelectronic Chemical Materials and Devices of Ministry of Education, Jianghan University, Wuhan, 430056, China
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20
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Sun X, Chen Y, Zhao D, Taniguchi T, Watanabe K, Wang J, Xue J. Measuring Band Modulation of MoS 2 with Ferroelectric Gates. NANO LETTERS 2023; 23:2114-2120. [PMID: 36867589 DOI: 10.1021/acs.nanolett.2c04326] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Electronic properties of two-dimensional (2D) materials can be significantly tuned by an external electric field. Ferroelectric gates can provide a strong polarization electric field. Here, we report the measurements of the band structure of few-layer MoS2 modulated by a ferroelectric P(VDF-TrFE) gate with contact-mode scanning tunneling spectroscopy. When P(VDF-TrFE) is fully polarized, an electric field up to ∼0.62 V/nm through the MoS2 layers is inferred from the measured band edges, which affects the band structure significantly. First, strong band bending in the vertical direction signifies the Franz-Keldysh effect and a large extension of the optical absorption edge. Photons with energy of half the band gap are still absorbed with 20% of the absorption probability of photons at the band gap. Second, the electric field greatly enlarges the energy separations between the quantum-well subbands. Our study intuitively demonstrates the great potential of ferroelectric gates in band structure manipulation of 2D materials.
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Affiliation(s)
- Xinzuo Sun
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yan Chen
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 20083, China
| | - Dongyang Zhao
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 20083, China
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jianlu Wang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
- Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 20083, China
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Jiamin Xue
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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21
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Shi X, Liu H, Hu Z, Zhao J, Gao J. Porous carbon-based metal-free monolayers towards highly stable and flexible wearable thermoelectrics and microelectronics. NANOSCALE 2023; 15:1522-1528. [PMID: 36546423 DOI: 10.1039/d2nr05443d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
In the search for high mechanical strength and flexibility, ultrahigh semiconducting speed is crucial for the next generation of microelectronic and wearable electronics. Herein, we propose two 2D graphene-like macrocyclic complex carbon-based monolayers, namely g-MC-A and g-MC-B. Both monolayers are dynamically stable according to phonon dispersion and ab initio molecular dynamics simulations. The yield stress of these two layers reaches half that of graphene, revealing remarkably high mechanical strength. Besides, both monolayers are semiconductors. The electron mobility of g-MC-A is high: up to 104 cm2 V-1 s-1, comparable to black phosphorene. Furthermore, these two monolayers exhibit excellent inherent conductivity with anisotropic characteristics. Interestingly, an extra valley is observed near the conduction band edge for both layers, further simulation predicted both metal-free monolayers will exhibit ZT > 1, implying high thermoelectric performance. Therefore, these two C-based metal-free layers have promising applications in mechanical enhancement, microelectronics, wearable electronics and thermoelectric devices.
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Affiliation(s)
- Xiaoran Shi
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
| | - Hongsheng Liu
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
| | - Ziyu Hu
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China.
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
- State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian, 116024, China
| | - Junfeng Gao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
- State Key Laboratory of Structural Analysis for Industrial Equipment, Dalian University of Technology, Dalian, 116024, China
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22
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Zhou Y, Wang Y, Zhuge F, Guo J, Ma S, Wang J, Tang Z, Li Y, Miao X, He Y, Chai Y. A Reconfigurable Two-WSe 2 -Transistor Synaptic Cell for Reinforcement Learning. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107754. [PMID: 35104378 DOI: 10.1002/adma.202107754] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2021] [Revised: 01/19/2022] [Indexed: 06/14/2023]
Abstract
Reward-modulated spike-timing-dependent plasticity (R-STDP) is a brain-inspired reinforcement learning (RL) rule, exhibiting potential for decision-making tasks and artificial general intelligence. However, the hardware implementation of the reward-modulation process in R-STDP usually requires complicated Si complementary metal-oxide-semiconductor (CMOS) circuit design that causes high power consumption and large footprint. Here, a design with two synaptic transistors (2T) connected in a parallel structure is experimentally demonstrated. The 2T unit based on WSe2 ferroelectric transistors exhibits reconfigurable polarity behavior, where one channel can be tuned as n-type and the other as p-type due to nonvolatile ferroelectric polarization. In this way, opposite synaptic weight update behaviors with multilevel (>6 bit) conductance states, ultralow nonlinearity (0.56/-1.23), and large Gmax /Gmin ratio of 30 are realized. By applying positive/negative reward to (anti-)STDP component of 2T cell, R-STDP learning rules are realized for training the spiking neural network and demonstrated to solve the classical cart-pole problem, exhibiting a way for realizing low-power (32 pJ per forward process) and highly area-efficient (100 µm2 ) hardware chip for reinforcement learning.
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Affiliation(s)
- Yue Zhou
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430000, China
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Yasai Wang
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430000, China
| | - Fuwei Zhuge
- School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430000, China
| | - Jianmiao Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Sijie Ma
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Jingli Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Zijian Tang
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430000, China
| | - Yi Li
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430000, China
| | - Xiangshui Miao
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430000, China
| | - Yuhui He
- Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430000, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
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23
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Sun Y, He N, Yuan Q, Wang Y, Dong Y, Wen D. Ferroelectric Polarized in Transistor Channel Polarity Modulation for Reward-Modulated Spike-Time-Dependent Plasticity Application. J Phys Chem Lett 2022; 13:10056-10064. [PMID: 36264655 DOI: 10.1021/acs.jpclett.2c03007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Reward signals reflect the developmental tendency of reinforcement learning (RL) agents. Reward-modulated spike-time-dependent plasticity (R-STDP) is an efficient and concise information processing feature in RL. However, the physical construction of R-STDP normally demands complex circuit design engineering, resulting in large power consumption and large area. In this work, we studied the role of ferroelectric polarization in the modulation of carbon nanotube transistor channel polarity. Furthermore, we applied a modulating channel method to construct a 2T synaptic component by spin-coating technology. Based on the nonvolatility of ferroelectric polarization, the synaptic component constructed has the characteristics of reconfigurable polarity. One channel could be modulated to n-type and the other to p-type. One modulated channel was used to perform the STDP function when the reward signal arrived, and the other modulated channel was used to perform the anti-STDP function when the punishment signal arrived. Finally, R-STDP learning rules are implemented on hardware. This work provides a strategy for hardware construction of RL.
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Affiliation(s)
- Yanmei Sun
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Nian He
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Qi Yuan
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Yufei Wang
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Yan Dong
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Dianzhong Wen
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
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24
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Song Y, Deng M, Wang Z, Li J, Lei H, Wan Z, Xia R, Aya S, Huang M. Emerging Ferroelectric Uniaxial Lamellar (Smectic A F) Fluids for Bistable In-Plane Polarization Memory. J Phys Chem Lett 2022; 13:9983-9990. [PMID: 36263973 DOI: 10.1021/acs.jpclett.2c02846] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The emerging matter category of liquid-matter ferroelectrics, i.e., ferroelectric nematics, demonstrates an unprecedented combination of fluidity and spontaneous polarization. However, unlike traditional ferroelectrics, the field-switched polarization at zero-field cannot be conserved, so the memory effect remains challenging. Here we report another new type of ferroelectric liquid crystal state, dubbed the ferroelectric smectic A phase, where the polarization is longitudinally coupled to the smectic quasi-layer order. With higher packing density, the phase exhibits higher values of refractive anisotropy and spontaneous polarization compared to the ferroelectric nematics. A delicate balance between the liquid crystal elasticity and flow viscosity enables both the switching and memory of the polarization field, thus opening the door toward realizing liquid-matter ferroelectric memory devices.
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Affiliation(s)
- Yaohao Song
- South China Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
| | - Minghui Deng
- South China Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
| | - Zhidong Wang
- South China Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
| | - Jinxing Li
- South China Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
| | - Huanyu Lei
- South China Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
| | - Zhe Wan
- South China Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
| | - Runli Xia
- South China Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
| | - Satoshi Aya
- South China Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
- Guangdong Provincial Key Laboratory of Functional and Intelligent Hybrid Materials and Devices, South China University of Technology, Guangzhou 510640, China
| | - Mingjun Huang
- South China Advanced Institute for Soft Matter Science and Technology (AISMST), School of Emergent Soft Matter, South China University of Technology, Guangzhou 510640, China
- Guangdong Provincial Key Laboratory of Functional and Intelligent Hybrid Materials and Devices, South China University of Technology, Guangzhou 510640, China
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25
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Xie H, Kang C, Iqbal MA, Weng X, Wu K, Tang W, Qi L, Zeng YJ. Ferroelectric Tuning of ZnO Ultraviolet Photodetectors. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3358. [PMID: 36234488 PMCID: PMC9565710 DOI: 10.3390/nano12193358] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/31/2022] [Revised: 09/23/2022] [Accepted: 09/23/2022] [Indexed: 06/16/2023]
Abstract
The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP2S6 (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 104 A/W and 7.17 × 1011 Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors.
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26
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Jin T, Mao J, Gao J, Han C, Loh KP, Wee ATS, Chen W. Ferroelectrics-Integrated Two-Dimensional Devices toward Next-Generation Electronics. ACS NANO 2022; 16:13595-13611. [PMID: 36099580 DOI: 10.1021/acsnano.2c07281] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) ferroelectrics with surface-insensitive ferroelectricity that is significantly different from their traditional bulk counterparts have further inspired intensive interest. Integration of ferroelectrics into 2D-layered-material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Herein, fundamental properties of ferroelectric materials that are compatible with 2D devices are introduced, followed by a critical review of recent advances on the integration of ferroelectrics into 2D devices. Representative device architectures and corresponding working mechanisms are discussed, such as ferroelectrics/2D semiconductor heterostructures, 2D ferroelectric tunnel junctions, and 2D ferroelectric diodes. By leveraging the favorable properties of ferroelectrics, a variety of functional 2D devices including ferroelectric-gated negative capacitance field-effect transistors, programmable devices, nonvolatile memories, and neuromorphic devices are highlighted, where the application of 2D vdW ferroelectrics is particularly emphasized. This review provides a comprehensive understanding of ferroelectrics-integrated 2D devices and discusses the challenges of applying them into commercial electronic circuits.
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Affiliation(s)
- Tengyu Jin
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jingyu Mao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Jing Gao
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Cheng Han
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kian Ping Loh
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Andrew T S Wee
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, P. R. China
- Department of Physics, National University of Singapore, Singapore 117542, Singapore
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
- National University of Singapore (Suzhou) Research Institute, 377 Lin Quan Street, Suzhou Industrial Park, Suzhou 215123, P. R. China
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27
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Ye Q, Xu D, Cai B, Lu J, Yi H, Ma C, Zheng Z, Yao J, Ouyang G, Yang G. High-performance hierarchical O-SnS/I-ZnIn 2S 4 photodetectors by leveraging the synergy of optical regulation and band tailoring. MATERIALS HORIZONS 2022; 9:2364-2375. [PMID: 35876307 DOI: 10.1039/d2mh00612j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Low light absorption and limited carrier lifetime are critical obstacles inhibiting further performance improvement of 2D layered material (2DLM) based photodetectors, while scalable fabrication is an ongoing challenge prior to commercialization from the lab to market. Herein, wafer-scale SnS/ZIS hierarchical nanofilms, where out-of-plane SnS (O-SnS) is modified onto in-plane ZIS (I-ZIS), have been achieved by pulsed-laser deposition. The derived O-SnS/I-ZIS photodetector exhibits markedly boosted sensitivity as compared to a pristine ZIS device. The synergy of multiple functionalities contributes to the dramatic improvement, including the pronounced light-trapping effect of O-SnS by multiple scattering, the high-efficiency spatial separation of photogenerated electron-hole pairs by a type-II staggered band alignment and the promoted carrier transport enabled by the tailored electronic structure of ZIS. Of note, the unique architecture of O-SnS/I-ZIS can considerably expedite the carrier dynamics, where O-SnS promotes the electron transfer from SnS to ZIS whilst the I-ZIS enables high-speed electron circulation. In addition, the interlayer transition enables the bridging of the effective optical window to telecommunication wavelengths. Moreover, monolithic integration of arrayed devices with satisfactory device-to-device variability has been encompassed and a proof-of-concept imaging application is demonstrated. On the whole, this study depicts a fascinating functional coupling architecture toward implementing chip-scale integrated optoelectronics.
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Affiliation(s)
- Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China
| | - Degao Xu
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China.
| | - Biao Cai
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China.
| | - Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
| | - Huaxin Yi
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443, China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, Guangdong, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China
| | - Gang Ouyang
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Matter Microstructure and Function of Hunan Province, School of Physics and Electronics, Hunan Normal University, Changsha 410081, China.
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China.
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou, 510275, Guangdong, P. R. China
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28
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Lu J, Ye Q, Ma C, Zheng Z, Yao J, Yang G. Dielectric Contrast Tailoring for Polarized Photosensitivity toward Multiplexing Optical Communications and Dynamic Encrypt Technology. ACS NANO 2022; 16:12852-12865. [PMID: 35914000 DOI: 10.1021/acsnano.2c05114] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A selective-area oxidation strategy is developed to polarize high-symmetry 2D layered materials (2DLMs). The dichroic ratio of the derived O-WS2/WS2 photodetector reaches ∼8, which is competitive among state-of-the-art polarization photodetectors. Finite-different time-domain simulations consolidate that the polarization-sensitive photoresponse is associated with anisotropic spacial confinement, which gives rise to distinct dielectric contrasts for linearly polarized light of various directions and thus the polarization-dependent near-field distribution. Furthermore, selective-area oxidation treatment brings about dual effects, comprising the in situ formation of seamless in-plane WS2 homojunctions by thickness tailoring and the formation of out-of-plane O-WS2/WS2 heterojunctions. As a consequence, the recombination of photocarriers is markedly suppressed, resulting in outstanding photosensitivity with the optimized responsivity, external quantum efficiency, and detectivity of 0.161 A/W, 49.4%, and 1.4 × 1011 Jones for an O-WS2/WS2 photodetector in a self-powered mode. A scheme of multiplexing optical communications is revealed by harnessing the intensity and polarization state of light as independent transmission channels. Furthermore, dynamic encryption by leveraging the polarization state as a secret key is proposed. In the end, broad universality is reinforced through the induction of linear dichroism within 2D WSe2 crystals. On the whole, this study provides an additional perspective on polarization optoelectronics based on 2DLMs.
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Affiliation(s)
- Jianting Lu
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Qiaojue Ye
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Churong Ma
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou 511443, China
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, Guangdong, P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
- Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-sen University, Guangzhou 510275, Guangdong, P. R. China
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29
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Wang R, Wang F, Zhang X, Feng X, Zhao C, Bu K, Zhang Z, Zhai T, Huang F. Improved Polarization in the Sr
6
Cd
2
Sb
6
O
7
Se
10
Oxyselenide through Design of Lateral Sublattices for Efficient Photoelectric Conversion. Angew Chem Int Ed Engl 2022; 61:e202206816. [DOI: 10.1002/anie.202206816] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Indexed: 12/26/2022]
Affiliation(s)
- Ruiqi Wang
- Beijing National Laboratory for Molecular Sciences State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Xian Zhang
- Qian Xuesen Laboratory of Space Technology China Academy of Space Technology Beijing 100094 P. R. China
| | - Xin Feng
- State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Chendong Zhao
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 P. R. China
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research (HPSTAR) Shanghai 201203 P. R. China
| | - Zhuang Zhang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China
| | - Fuqiang Huang
- Beijing National Laboratory for Molecular Sciences State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering Peking University Beijing 100871 P. R. China
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai 200050 P. R. China
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30
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Jiang Y, Zhang L, Wang R, Li H, Li L, Zhang S, Li X, Su J, Song X, Xia C. Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse. ACS NANO 2022; 16:11218-11226. [PMID: 35730563 DOI: 10.1021/acsnano.2c04271] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric field-effect transistors (Fe-FET) are promising candidates for future information devices. However, they suffer from low endurance and short retention time, which retards the application of processing memory in the same physical processes. Here, inspired by the ferroelectric proximity effects, we design a reconfigurable two-dimensional (2D) MoS2 transistor featuring with asymmetric ferroelectric gate, exhibiting high memory and logic ability with a program/erase ratio of over 106 and a self-rectifying ratio of 103. Interestingly, the robust electric and optic cycling are obtained with a large switching ratio of 106 and nine distinct resistance states upon optical excitation with excellent nonvolatile characteristics. Meanwhile, the operation of memory mimics the synapse behavior in response to light spikes with different intensity and number. This design realizes an integration of robust processing memory in one single device, which demonstrates a considerable potential of an asymmetric ferroelectric gate in the development of Fe-FETs for logic processing and nonvolatile memory applications.
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Affiliation(s)
- Yurong Jiang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Linlin Zhang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Rui Wang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Hongzhi Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Lin Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Suicai Zhang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Xueping Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Jian Su
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Xiaohui Song
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Congxin Xia
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
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31
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Lu L, Weng W, Ma Y, Liu Y, Han S, Liu X, Xu H, Lin W, Sun Z, Luo J. Anisotropy in a 2D Perovskite Ferroelectric Drives Self‐Powered Polarization‐Sensitive Photoresponse for Ultraviolet Solar‐Blind Polarized‐Light Detection. Angew Chem Int Ed Engl 2022; 61:e202205030. [DOI: 10.1002/anie.202205030] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2022] [Indexed: 11/09/2022]
Affiliation(s)
- Lei Lu
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
| | - Wen Weng
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Yu Ma
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Yi Liu
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Shiguo Han
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
| | - Xitao Liu
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 P. R. China
| | - Haojie Xu
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Wenxiong Lin
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Zhihua Sun
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- University of Chinese Academy of Sciences Beijing 100049 P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 P. R. China
| | - Junhua Luo
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 P. R. China
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32
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Wang R, Wang F, Zhang X, Feng X, Zhao C, Bu K, Zhang Z, Zhai T, Huang F. Improved Polarization in the Sr6Cd2Sb6O7Se10 Oxyselenide through Design of Lateral Sublattices for Efficient Photoelectric Conversion. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202206816] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Ruiqi Wang
- Peking University College of Chemistry and Molecular Engineering College of Chemistry CHINA
| | - Fakun Wang
- Huazhong University of Science and Technology State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering CHINA
| | - Xian Zhang
- China Academy of Space Technology Qian Xuesen Laboratory of Space Technology CHINA
| | - Xin Feng
- Huazhong University of Science and Technology State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering CHINA
| | - Chendong Zhao
- Shanghai Institute of Ceramics Chinese Academy of Sciences State Key Laboratory of High-Performance Ceramics and Superfine Microstructure CHINA
| | - Kejun Bu
- Center for High Pressure Science and Technology Advanced Research HPSTAR CHINA
| | - Zhuang Zhang
- Shanghai Institute of Ceramics Chinese Academy of Sciences State Key Laboratory of High-Performance Ceramics and Superfine Microstructure CHINA
| | - Tianyou Zhai
- Huazhong University of Science and Technology State Key Laboratory of Materials Processing and Die & Mould Technology School of Materials Science and Engineering CHINA
| | - Fuqiang Huang
- Shanghai Institute of Ceramics Chinese Academy of Sciences dingxi road, no. 1295 Shanghai CHINA
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33
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Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains. Nat Commun 2022; 13:3198. [PMID: 35680950 PMCID: PMC9184637 DOI: 10.1038/s41467-022-30951-y] [Citation(s) in RCA: 36] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2022] [Accepted: 05/18/2022] [Indexed: 11/09/2022] Open
Abstract
With the further miniaturization and integration of multi-dimensional optical information detection devices, polarization-sensitive photodetectors based on anisotropic low-dimension materials have attractive potential applications. However, the performance of these devices is restricted by intrinsic property of materials leading to a small polarization ratio of the detectors. Here, we construct a black phosphorus (BP) homojunction photodetector defined by ferroelectric domains with ultra-sensitive polarization photoresponse. With the modulation of ferroelectric field, the BP exhibits anisotropic dispersion changes, leading an increased photothermalelectric (PTE) current in the armchair (AC) direction. Moreover, the PN junction can promote the PTE current and accelerate carrier separation. As a result, the BP photodetector demonstrates an ultrahigh polarization ratio (PR) of 288 at 1450 nm incident light, a large photoresponsivity of 1.06 A/W, and a high detectivity of 1.27 × 1011 cmHz1/2W−1 at room temperature. This work reveals the great potential of BP in future polarized light detection. Integrated polarization-sensitive photodetectors are important for sensing applications and optical communication. Here, the authors report the realization of 2D black phosphorus homojunction photodetectors defined by ferroelectric substrates, showing polarization ratios up to 288 and high responsivity in the near-infrared.
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34
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Lu L, Weng W, Ma Y, Liu Y, Han S, Liu X, Xu H, Lin W, Sun Z, Luo J. Anisotropy in a 2D Perovskite Ferroelectric Drives Self‐Powered Polarization‐Sensitive Photoresponse for Ultraviolet Solar‐Blind Polarized‐Light Detection. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202205030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
- Lei Lu
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
| | - Wen Weng
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Yu Ma
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Yi Liu
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Shiguo Han
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
| | - Xitao Liu
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 P. R. China
| | - Haojie Xu
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Wenxiong Lin
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- University of Chinese Academy of Sciences Beijing 100049 P. R. China
| | - Zhihua Sun
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- University of Chinese Academy of Sciences Beijing 100049 P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 P. R. China
| | - Junhua Luo
- State Key Laboratory of Structure Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian, 350002 P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 P. R. China
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35
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Huang W, Zhang Y, Song M, Wang B, Hou H, Hu X, Chen X, Zhai T. Encapsulation strategies on 2D materials for field effect transistors and photodetectors. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2021.08.086] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
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36
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Jia M, Guo P, Wang W, Yu A, Zhang Y, Wang ZL, Zhai J. Tactile tribotronic reconfigurable p-n junctions for artificial synapses. Sci Bull (Beijing) 2022; 67:803-812. [PMID: 36546233 DOI: 10.1016/j.scib.2021.12.014] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2021] [Revised: 11/13/2021] [Accepted: 12/05/2021] [Indexed: 01/06/2023]
Abstract
The emulation of biological synapses with learning and memory functions and versatile plasticity is significantly promising for neuromorphic computing systems. Here, a robust and continuously adjustable mechanoplastic semifloating-gate transistor is demonstrated based on an integrated graphene/hexagonal boron nitride/tungsten diselenide van der Waals heterostructure and a triboelectric nanogenerator (TENG). The working states (p-n junction or n+-n junction) can be manipulated and switched under the sophisticated modulation of triboelectric potential derived from mechanical actions, which is attributed to carriers trapping and detrapping in the graphene layer. Furthermore, a reconfigurable artificial synapse is constructed based on such mechanoplastic transistor that can simulate typical synaptic plasticity and implement dynamic control correlations in each response mode by further designing the amplitude and duration. The artificial synapse can work with ultra-low energy consumption at 74.2 fJ per synaptic event and the extended synaptic weights. Under the synergetic effect of the semifloating gate, the synaptic device can enable successive mechanical facilitation/depression, short-/long-term plasticity and learning-experience behavior, exhibiting the mechanical behavior derived synaptic plasticity. Such reconfigurable and mechanoplastic features provide an insight into the applications of energy-efficient and real-time interactive neuromodulation in the future artificial intelligent system beyond von Neumann architecture.
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Affiliation(s)
- Mengmeng Jia
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Pengwen Guo
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Aifang Yu
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China; Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, China
| | - Yufei Zhang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhong Lin Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
| | - Junyi Zhai
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China; Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
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37
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Pan C, Mao Z, Yuan X, Zhang H, Mei L, Ji X. Heterojunction Nanomedicine. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105747. [PMID: 35174980 PMCID: PMC9008793 DOI: 10.1002/advs.202105747] [Citation(s) in RCA: 33] [Impact Index Per Article: 16.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2021] [Revised: 01/29/2022] [Indexed: 05/07/2023]
Abstract
Exogenous stimulation catalytic therapy has received enormous attention as it holds great promise to address global medical issues. However, the therapeutic effect of catalytic therapy is seriously restricted by the fast charge recombination and the limited utilization of exogenous stimulation by catalysts. In the past few decades, many strategies have been developed to overcome the above serious drawbacks, among which heterojunctions are the most widely used and promising strategy. This review attempts to summarize the recent progress in the rational design and fabrication of heterojunction nanomedicine, such as semiconductor-semiconductor heterojunctions (including type I, type II, type III, PN, and Z-scheme junctions) and semiconductor-metal heterojunctions (including Schottky, Ohmic, and localized surface plasmon resonance-mediated junctions). The catalytic mechanisms and properties of the above junction systems are also discussed in relation to biomedical applications, especially cancer treatment and sterilization. This review concludes with a summary of the challenges and some perspectives on future directions in this exciting and still evolving field of research.
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Affiliation(s)
- Chao Pan
- Academy of Medical Engineering and Translational MedicineMedical CollegeTianjin UniversityTianjin300072China
| | - Zhuo Mao
- Tianjin Key Laboratory of Biomedical MaterialsKey Laboratory of Biomaterials and Nanotechnology for Cancer ImmunotherapyInstitute of Biomedical EngineeringChinese Academy of Medical Sciences and Peking Union Medical CollegeTianjin300192China
| | - Xue Yuan
- Academy of Medical Engineering and Translational MedicineMedical CollegeTianjin UniversityTianjin300072China
| | - Hanjie Zhang
- Tianjin Key Laboratory of Biomedical MaterialsKey Laboratory of Biomaterials and Nanotechnology for Cancer ImmunotherapyInstitute of Biomedical EngineeringChinese Academy of Medical Sciences and Peking Union Medical CollegeTianjin300192China
| | - Lin Mei
- Tianjin Key Laboratory of Biomedical MaterialsKey Laboratory of Biomaterials and Nanotechnology for Cancer ImmunotherapyInstitute of Biomedical EngineeringChinese Academy of Medical Sciences and Peking Union Medical CollegeTianjin300192China
| | - Xiaoyuan Ji
- Academy of Medical Engineering and Translational MedicineMedical CollegeTianjin UniversityTianjin300072China
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38
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Xue W, Jiang Q, Wang F, He R, Pang R, Yang H, Wang P, Yang R, Zhong Z, Zhai T, Xu X. Discovery of Robust Ferroelectricity in 2D Defective Semiconductor α-Ga 2 Se 3. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105599. [PMID: 34881497 DOI: 10.1002/smll.202105599] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Revised: 11/15/2021] [Indexed: 06/13/2023]
Abstract
2D ferroelectrics with robust polar order in the atomic-scale thickness at room temperature are needed to miniaturize ferroelectric devices and tackle challenges imposed by traditional ferroelectrics. These materials usually have polar point group structure regarding as a prerequisite of ferroelectricity. Yet, to introduce polar structure into otherwise nonpolar 2D materials for producing ferroelectricity remains a challenge. Here, by combining first-principles calculations and experimental studies, it is reported that the native Ga vacancy-defects located in the asymmetrical sites in cubic defective semiconductor α-Ga2 Se3 can induce polar structure. Meanwhile, the induced polarization can be switched in a moderate energy barrier. The switched polarization is observed in 2D α-Ga2 Se3 nanoflakes of ≈4 nm with a high switching temperature up to 450 K. Such polarization switching could arise from the displacement of Ga vacancy between neighboring asymmetrical sites by applying an electric field. This work removes the point group limit for ferroelectricity, expanding the range of 2D ferroelectrics into the native defective semiconductors.
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Affiliation(s)
- Wuhong Xue
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
| | - Qitao Jiang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Ri He
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Ruixue Pang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
| | - Huali Yang
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Peng Wang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
| | - Ruilong Yang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiaohong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
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39
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Chen J, Guo R, Wang X, Zhu C, Cao G, You L, Duan R, Zhu C, Hadke SS, Cao X, Salim T, Buenconsejo PJS, Xu M, Zhao X, Zhou J, Deng Y, Zeng Q, Wong LH, Chen J, Liu F, Liu Z. Solid-Ionic Memory in a van der Waals Heterostructure. ACS NANO 2022; 16:221-231. [PMID: 35001610 DOI: 10.1021/acsnano.1c05841] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Defect states dominate the performance of low-dimensional nanoelectronics, which deteriorate the serviceability of devices in most cases. But in recent years, some intriguing functionalities are discovered by defect engineering. In this work, we demonstrate a bifunctional memory device of a MoS2/BiFeO3/SrTiO3 van der Waals heterostructure, which can be programmed and erased by solely one kind of external stimuli (light or electrical-gate pulse) via engineering of oxygen-vacancy-based solid-ionic gating. The device shows multibit electrical memory capability (>22 bits) with a large linearly tunable dynamic range of 7.1 × 106 (137 dB). Furthermore, the device can be programmed by green- and red-light illuminations and then erased by UV light pulses. Besides, the photoresponse under red-light illumination reaches a high photoresponsivity (6.7 × 104 A/W) and photodetectivity (2.12 × 1013 Jones). These results highlighted solid-ionic memory for building up multifunctional electronic and optoelectronic devices.
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Affiliation(s)
| | - Rui Guo
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | | | | | - Guiming Cao
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Lu You
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, P. R. China
| | | | | | | | | | | | | | | | | | | | | | | | | | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zheng Liu
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
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40
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Zhao Y, Gobbi M, Hueso LE, Samorì P. Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications. Chem Rev 2021; 122:50-131. [PMID: 34816723 DOI: 10.1021/acs.chemrev.1c00497] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.
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Affiliation(s)
- Yuda Zhao
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France.,School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, 310027 Hangzhou, People's Republic of China
| | - Marco Gobbi
- Centro de Fisica de Materiales (CSIC-UPV/EHU), Paseo Manuel de Lardizabal 5, E-20018 Donostia-San Sebastián, Spain.,CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Luis E Hueso
- CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
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Abstract
2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi2Se3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi2Se3 materials. The structure and inherent properties of Bi2Se3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi2Se3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.
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Affiliation(s)
- Fakun K. Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Sijie J. Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Tianyou Y. Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
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42
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Zhao Z, Rakheja S, Zhu W. Nonvolatile Reconfigurable 2D Schottky Barrier Transistors. NANO LETTERS 2021; 21:9318-9324. [PMID: 34677980 DOI: 10.1021/acs.nanolett.1c03557] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nonvolatile reconfigurable transistors can be used to implement highly flexible and compact logic circuits with low power consumption in maintaining the configuration. In this paper, we build nonvolatile reconfigurable transistors based on 2D CuInP2S6/MoTe2 heterostructures. The ferroelectric polarization-induced electron and hole doping in the heterostructure are investigated. By introducing the ferroelectric doping into the source/drain contacts, we demonstrate reconfigurable Schottky barrier transistors, whose polarity (n-type or p-type) can be dynamically programmed, where the configuration is nonvolatile in nature. These transistors exhibit a tunable photoresponse, where the n-n doping state leads to negative photocurrent, whereas the p-p doping state gives rise to a positive photocurrent. The transistor with asymmetric (n-p or p-n) contacts exhibits a strong photovoltaic effect. These reconfigurable logic and optoelectronic transistors will enable a new type of device fabric for future computing systems and sensing networks.
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Affiliation(s)
- Zijing Zhao
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Holonyak Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Shaloo Rakheja
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Holonyak Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Wenjuan Zhu
- Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- Holonyak Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
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Park C, Lee K, Koo M, Park C. Soft Ferroelectrics Enabling High-Performance Intelligent Photo Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004999. [PMID: 33338279 DOI: 10.1002/adma.202004999] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/22/2020] [Revised: 08/27/2020] [Indexed: 06/12/2023]
Abstract
Soft ferroelectrics based on organic and organic-inorganic hybrid materials have gained much interest among researchers owing to their electrically programmable and remnant polarization. This allows for the development of numerous flexible, foldable, and stretchable nonvolatile memories, when combined with various crystal engineering approaches to optimize their performance. Soft ferroelectrics have been recently considered to have an important role in the emerging human-connected electronics that involve diverse photoelectronic elements, particularly those requiring precise programmable electric fields, such as tactile sensors, synaptic devices, displays, photodetectors, and solar cells for facile human-machine interaction, human safety, and sustainability. This paper provides a comprehensive review of the recent developments in soft ferroelectric materials with an emphasis on their ferroelectric switching principles and their potential application in human-connected intelligent electronics. Based on the origins of ferroelectric atomic and/or molecular switching, the soft ferroelectrics are categorized into seven subgroups. In this review, the efficiency of soft ferroelectrics with their distinct ferroelectric characteristics utilized in various human-connected electronic devices with programmable electric field is demonstrated. This review inspires further research to utilize the remarkable functionality of soft electronics.
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Affiliation(s)
- Chanho Park
- Department of Materials Science and Engineering, Yonsei University, Yonsei-ro 50, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Kyuho Lee
- Department of Materials Science and Engineering, Yonsei University, Yonsei-ro 50, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Min Koo
- Department of Materials Science and Engineering, Yonsei University, Yonsei-ro 50, Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Cheolmin Park
- Department of Materials Science and Engineering, Yonsei University, Yonsei-ro 50, Seodaemun-gu, Seoul, 03722, Republic of Korea
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Zhong F, Ye J, He T, Zhang L, Wang Z, Li Q, Han B, Wang P, Wu P, Yu Y, Guo J, Zhang Z, Peng M, Xu T, Ge X, Wang Y, Wang H, Zubair M, Zhou X, Gao P, Fan Z, Hu W. Substitutionally Doped MoSe 2 for High-Performance Electronics and Optoelectronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102855. [PMID: 34647416 DOI: 10.1002/smll.202102855] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 08/11/2021] [Indexed: 06/13/2023]
Abstract
2D materials, of which the carrier type and concentration are easily tuned, show tremendous superiority in electronic and optoelectronic applications. However, the achievements are still quite far away from practical applications. Much more effort should be made to further improve their performance. Here, p-type MoSe2 is successfully achieved via substitutional doping of Ta atoms, which is confirmed experimentally and theoretically, and outstanding homojunction photodetectors and inverters are fabricated. MoSe2 p-n homojunction device with a low reverse current (300 pA) exhibits a high rectification ratio (104 ). The analysis of dark current reveals the domination of the Shockley-Read-Hall (SRH) and band-to-band tunneling (BTB) current. The homojunction photodetector exhibits a large open-circuit voltage (0.68 V) and short-circuit currents (1 µA), which is suitable for micro-solar cells. Furthermore, it possesses outstanding responsivity (0.28 A W-1 ), large external quantum efficiency (42%), and a high signal-to-noise ratio (≈107 ). Benefiting from the continuous energy band of homojunction, the response speed reaches up to 20 µs. Besides, the Ta-doped MoSe2 inverter exhibits a high voltage gain (34) and low power consumption (127 nW). This work lays a foundation for the practical application of 2D material devices.
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Affiliation(s)
- Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jiafu Ye
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ting He
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Lili Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qing Li
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
| | - Bo Han
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Peisong Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yiye Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhenhan Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Yang Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Muhammad Zubair
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xiaohao Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
- Collaborative Innovation Centre of Quantum Matter, Beijing, 100871, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, 999077, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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45
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Wang Y, Gong Y, Huang S, Xing X, Lv Z, Wang J, Yang JQ, Zhang G, Zhou Y, Han ST. Memristor-based biomimetic compound eye for real-time collision detection. Nat Commun 2021; 12:5979. [PMID: 34645801 PMCID: PMC8514515 DOI: 10.1038/s41467-021-26314-8] [Citation(s) in RCA: 42] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/28/2021] [Accepted: 09/29/2021] [Indexed: 11/18/2022] Open
Abstract
The lobula giant movement detector (LGMD) is the movement-sensitive, wide-field visual neuron positioned in the third visual neuropile of lobula. LGMD neuron can anticipate collision and trigger avoidance efficiently owing to the earlier occurring firing peak before collision. Vision chips inspired by the LGMD have been successfully implemented in very-large-scale-integration (VLSI) system. However, transistor-based chips and single devices to simulate LGMD neurons make them bulky, energy-inefficient and complicated. The devices with relatively compact structure and simple operation mode to mimic the escape response of LGMD neuron have not been realized yet. Here, the artificial LGMD visual neuron is implemented using light-mediated threshold switching memristor. The non-monotonic response to light flow field originated from the formation and break of Ag conductive filaments is analogue to the escape response of LGMD neuron. Furthermore, robot navigation with obstacle avoidance capability and biomimetic compound eyes with wide field-of-view (FoV) detection capability are demonstrated.
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Affiliation(s)
- Yan Wang
- Institute of Microscale optoelectronics and College of Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, P. R. China
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, 230013, Hefei, P. R. China
| | - Yue Gong
- Institute of Microscale optoelectronics and College of Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, P. R. China
| | - Shenming Huang
- Institute of Microscale optoelectronics and College of Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, P. R. China
| | - Xuechao Xing
- Institute of Microscale optoelectronics and College of Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, P. R. China
| | - Ziyu Lv
- Institute of Microscale optoelectronics and College of Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, P. R. China
| | - Junjie Wang
- Institute of Microscale optoelectronics and College of Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, P. R. China
| | - Jia-Qin Yang
- Institute of Microscale optoelectronics and College of Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, P. R. China
| | - Guohua Zhang
- Institute of Microscale optoelectronics and College of Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, 518060, Shenzhen, P. R. China
| | - Su-Ting Han
- Institute of Microscale optoelectronics and College of Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, P. R. China.
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46
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Li D, Sun S, Xiao Z, Song J, Shao DF, Tsymbal EY, Ducharme S, Hong X. Giant Transport Anisotropy in ReS_{2} Revealed via Nanoscale Conducting-Path Control. PHYSICAL REVIEW LETTERS 2021; 127:136803. [PMID: 34623838 DOI: 10.1103/physrevlett.127.136803] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2020] [Revised: 05/28/2021] [Accepted: 07/19/2021] [Indexed: 06/13/2023]
Abstract
The low in-plane symmetry in layered 1T'-ReS_{2} results in strong band anisotropy, while its manifestation in the electronic properties is challenging to resolve due to the lack of effective approaches for controlling the local current path. In this work, we reveal the giant transport anisotropy in monolayer to four-layer ReS_{2} by creating directional conducting paths via nanoscale ferroelectric control. By reversing the polarization of a ferroelectric polymer top layer, we induce a conductivity switching ratio of >1.5×10^{8} in the ReS_{2} channel at 300 K. Characterizing the domain-defined conducting nanowires in an insulating background shows that the conductivity ratio between the directions along and perpendicular to the Re chain can exceed 5.5×10^{4} in monolayer ReS_{2}. Theoretical modeling points to the band origin of the transport anomaly and further reveals the emergence of a flat band in few-layer ReS_{2}. Our work paves the path for implementing highly anisotropic 2D materials for designing novel collective phenomena and electron lensing applications.
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Affiliation(s)
- Dawei Li
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Shuo Sun
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Zhiyong Xiao
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Jingfeng Song
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Ding-Fu Shao
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Evgeny Y Tsymbal
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Stephen Ducharme
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
| | - Xia Hong
- Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, USA
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Tong L, Peng Z, Lin R, Li Z, Wang Y, Huang X, Xue KH, Xu H, Liu F, Xia H, Wang P, Xu M, Xiong W, Hu W, Xu J, Zhang X, Ye L, Miao X. 2D materials-based homogeneous transistor-memory architecture for neuromorphic hardware. Science 2021; 373:1353-1358. [PMID: 34413170 DOI: 10.1126/science.abg3161] [Citation(s) in RCA: 80] [Impact Index Per Article: 26.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
[Figure: see text].
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Affiliation(s)
- Lei Tong
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Zhuiri Peng
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Runfeng Lin
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Zheng Li
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Yilun Wang
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Xinyu Huang
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Kan-Hao Xue
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Hangyu Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Feng Liu
- School of Power and Mechanical Engineering, Wuhan University, Wuhan, Hubei 430072, China
| | - Hui Xia
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Peng Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Mingsheng Xu
- School of Micro-Nano Electronics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
| | - Wei Xiong
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jianbin Xu
- Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong, China
| | - Xinliang Zhang
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Lei Ye
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
| | - Xiangshui Miao
- Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
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48
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Li Z, Li D, Wang H, Chen P, Pi L, Zhou X, Zhai T. Intercalation Strategy in 2D Materials for Electronics and Optoelectronics. SMALL METHODS 2021; 5:e2100567. [PMID: 34928056 DOI: 10.1002/smtd.202100567] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2021] [Revised: 07/24/2021] [Indexed: 05/21/2023]
Abstract
Intercalation is an effective approach to tune the physical and chemical properties of 2D materials due to their abundant van der Waals gaps that can host high-density intercalated guest matters. This approach has been widely employed to modulate the optical, electrical, and photoelectrical properties of 2D materials for their applications in electronic and optoelectronic devices. Thus it is necessary to review the recent progress of the intercalation strategy in 2D materials and their applications in devices. Herein, various intercalation strategies and the novel properties of the intercalated 2D materials as well as their applications in electronics and optoelectronics are summarized. In the end, the development tendency of this promising approach for 2D materials is also outlined.
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Affiliation(s)
- Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Ping Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Lejing Pi
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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Sun Y, Niu G, Ren W, Meng X, Zhao J, Luo W, Ye ZG, Xie YH. Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection. ACS NANO 2021; 15:10982-11013. [PMID: 34184877 DOI: 10.1021/acsnano.1c01735] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Photodetectors are one of the most important components for a future "Internet-of-Things" information society. Compared to the mainstream semiconductor-based photodetectors, emerging devices based on two-dimensional (2D) materials and ferroelectrics as well as their hybrid systems have been extensively studied in recent decades due to their outstanding performances and related interesting physical, electrical, and optoelectronic phenomena. In this paper, we review the photodetection based on 2D materials and ferroelectric hybrid systems. The fundamentals of 2D and ferroelectric materials as well as the interaction in the hybrid system will be introduced. Ferroelectricity modulated optoelectronic properties in the hybrid system will be discussed in detail. After the basics and figures of merit of photodetectors are summarized, the 2D-ferroelectrics devices with different structures including p-n diodes, Schottky diodes, and field-effect transistors will be reviewed and compared. The polarization of ferroelectrics offers the possibility of the modulation and enhancement of the photodetection in the hybrid detectors, which will be discussed in depth. Finally, the challenges and perspectives of the photodetectors based on 2D ferroelectrics will be proposed. This Review outlines the important aspects of the recent development of the hybrid system of 2D and ferroelectric materials, which could interact with each other and thus lead to photodetectors with higher performances. Such a Review will be helpful for the research of emerging physical phenomena and for the design of multifunctional nanoscale electronic and optoelectronic devices.
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Affiliation(s)
- Yanxiao Sun
- Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, Shaanxi, P. R. China
| | - Gang Niu
- Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, Shaanxi, P. R. China
| | - Wei Ren
- Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, Shaanxi, P. R. China
| | - Xiangjian Meng
- National Laboratory for Infrared Physics Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China
| | - Jinyan Zhao
- Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, No. 28, Xianning West Road, Xi'an 710049, Shaanxi, P. R. China
| | - Wenbo Luo
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China
| | - Zuo-Guang Ye
- Department of Chemistry and 4D Laboratories, Simon Fraser University, Burnaby V5A 1S6, British Columbia, Canada
| | - Ya-Hong Xie
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles 90024, California, United States
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Li D, Sun S, Wang K, Ahmadi Z, Shield JE, Ducharme S, Hong X. Assembly of Close-Packed Ferroelectric Polymer Nanowires via Interface-Epitaxy with ReS 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2100214. [PMID: 34062016 DOI: 10.1002/adma.202100214] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2021] [Revised: 03/30/2021] [Indexed: 06/12/2023]
Abstract
The flexible, transparent, and low-weight nature of ferroelectric polymers makes them promising for wearable electronic and optical applications. To reach the full potential of the polarization-enabled device functionalities, large-scale fabrication of polymer thin films with well-controlled polar directions is called for, which remains a central challenge. The widely exploited Langmuir-Blodgett, spin-coating, and electrospinning methods only yield polymorphous or polycrystalline films, where the net polarization is compromised. Here, an easily scalable approach is reported to achieve poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) thin films composed of close-packed crystalline nanowires via interface-epitaxy with 1T'-ReS2 . Upon controlled thermal treatment, uniform P(VDF-TrFE) films restructure into about 10 and 35 nm-wide (010)-oriented nanowires that are crystallographically aligned with the underlying ReS2 , as revealed by high-resolution transmission electron microscopy. Piezoresponse force microscopy studies confirm the out-of-plane polar axis of the nanowire films and reveal coercive voltages as low as 0.1 V. Reversing the polarization can induce a conductance switching ratio of >108 in bilayer ReS2 , over six orders of magnitude higher than that achieved by an untreated polymer gate. This study points to a cost-effective route to large-scale processing of high-performance ferroelectric polymer thin films for flexible energy-efficient nanoelectronics.
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Affiliation(s)
- Dawei Li
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0299, USA
| | - Shuo Sun
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0299, USA
| | - Kun Wang
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0299, USA
| | - Zahra Ahmadi
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0526, USA
| | - Jeffrey E Shield
- Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0526, USA
| | - Stephen Ducharme
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0299, USA
| | - Xia Hong
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska, 68588-0299, USA
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