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Wang H, Yang L. Manipulating Photogalvanic Effects in Two-Dimensional Multiferroic Breathing Kagome Materials. J Phys Chem Lett 2024; 15:8689-8696. [PMID: 39159421 DOI: 10.1021/acs.jpclett.4c01844] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/21/2024]
Abstract
Multiferroic materials, known for their multiple tunable orders, present an exceptional opportunity to manipulate nonlinear optical responses that are sensitive to symmetry. In this study, we propose leveraging electric and magnetic fields to selectively control and switch specific types of photogalvanic effects in two-dimensional multiferroic breathing kagome materials. Taking monolayer Nb3I8 as an example, we demonstrate that the shift current, characterized by the real-space shift of electrons and holes, is predominantly unaffected by magnetic order. In contrast, injection current, featured by quantum metric dipole in momentum space, is closely related to valley polarization, which can be controlled by a magnetic field. Furthermore, both photocurrents can be reversed by an out-of-plane electric field via lattice breathing. Our findings reveal the potential of multiferroic breathing kagome structures for multifunctional optoelectronic applications and sensors.
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Affiliation(s)
- Haonan Wang
- Department of Physics, Washington University, St. Louis, Missouri 63130, United States
| | - Li Yang
- Department of Physics, Washington University, St. Louis, Missouri 63130, United States
- Department of Physics and Institute of Materials Science and Engineering, Washington University, St. Louis, Missouri 63130, United States
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2
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Wang BJ, Hou YN, Jin CD, Zhang H, Wang JL, Gong PL, Lian RQ, Shi XQ, Wang RN. Rational design of a two-dimensional high-temperature ferromagnet from HCP cobalt. Phys Chem Chem Phys 2024; 26:22715-22725. [PMID: 39161289 DOI: 10.1039/d4cp01390e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/21/2024]
Abstract
Cobalt has the highest Curie temperature (Tc) among the elemental ferromagnetic metals and has a hexagonal close-packed (HCP) structure at room temperature. In this study, HCP Co was thinned to the thickness of several (n) unit cells along the c-axis and then passivated by halogen atoms, thus being named Co2nX2 (X = F, Cl, Br and I). For Co2X2 and Co3X2, all of them are not only kinetically but also thermodynamically stable from the viewpoint of the phonon spectra and molecular dynamics. Similar to HCP Co, two-dimensional (2D) Co2F2, Co2Cl2 and Co3X2 (X = Cl, Br and I) are still ferromagnetic metals within the Stoner model but Co2X2 (X = Br and I) is a ferromagnetic half-metal with the coexistence of the metallic behavior for one spin and the insulating behavior for the other spin. Taking into account the spin-orbital coupling (SOC), the easy-magnetization axis is within the plane where the magnetization is isotropic, making it look like a 2D XY magnet. Applying a critical biaxial strain could lead to an easy-magnetization axis changing from the in-plane to the out-of-plane direction. Finally, we use classical Monte Carlo simulations to estimate the Curie temperature (Tc) which is as high as 957 and 510 K for Co2F2 and Co2Cl2, respectively, because of the strong direct exchange interaction. Different from being obtained by mechanical or liquid exfoliation from van der Waals layered structures, our study opens up new possibilities to search for novel 2D ferromagnets from the elemental ferromagnets and provides opportunities for realizing realistic ultra-thin spintronic devices.
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Affiliation(s)
- Bo-Jing Wang
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Yi-Na Hou
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Chen-Dong Jin
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Hu Zhang
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Jiang-Long Wang
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Peng-Lai Gong
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Ru-Qian Lian
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Xing-Qiang Shi
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
| | - Rui-Ning Wang
- Key Laboratory of Optic-Electronic Information and Materials of Hebei Province, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, Hebei Research Center of the Basic Discipline for Computational Physics, Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002, People's Republic of China.
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3
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Gu J, Mou Y, Ma J, Chen H, Zhang C, Wang Y, Wang J, Guo H, Shi W, Yuan X, Jiang X, Ta D, Shen J, Zhang C. Acousto-Drag Photovoltaic Effect by Piezoelectric Integration of Two-Dimensional Semiconductors. NANO LETTERS 2024; 24:10322-10330. [PMID: 39133825 DOI: 10.1021/acs.nanolett.4c02941] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/22/2024]
Abstract
Light-to-electricity conversion is crucial for energy harvesting and photodetection, requiring efficient electron-hole pair separation to prevent recombination. Traditional junction-based mechanisms using built-in electric fields fail in nonbarrier regions. Homogeneous material harvesting under a photovoltaic effect is appealing but is only realized in noncentrosymmetric systems via a bulk photovoltaic effect. Here we report the realization of a photovoltaic effect by employing surface acoustic waves (SAWs) to generate zero-bias photocurrent in the conventional layered semiconductor MoSe2. SAWs induce periodic modulation to electronic bands and drag the photoexcited pairs toward the traveling direction. The photocurrent is extracted from a local barrier. The separation of generation and extraction processes suppresses recombination and yields a large nonlocal photoresponse. We distinguish the acousto-electric drag and electron-hole pair separation effect by fabricating devices of different configurations. The acousto-drag photovoltaic effect, enabled by piezoelectric integration, offers an efficient light-to-electricity conversion method, independent of semiconductor crystal symmetry.
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Affiliation(s)
- Jiaming Gu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Yicheng Mou
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Jianwen Ma
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Haonan Chen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Chuanxin Zhang
- Center for Biomedical Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, People's Republic of China
| | - Yuxiang Wang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Jiayu Wang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Hangwen Guo
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
- Shanghai Qi Zhi Institute, Shanghai 200232, People's Republic of China
| | - Wu Shi
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
| | - Xiang Yuan
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, People's Republic of China
- School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Xue Jiang
- Center for Biomedical Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, People's Republic of China
| | - Dean Ta
- Center for Biomedical Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, People's Republic of China
| | - Jian Shen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
- Shanghai Qi Zhi Institute, Shanghai 200232, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People's Republic of China
| | - Cheng Zhang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
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Mou Y, Yang X, Vega M, Zapata R, Gallas B, Bryche JF, Bouhelier A, Mivelle M. Femtosecond Drift Photocurrents Generated by an Inversely Designed Plasmonic Antenna. NANO LETTERS 2024; 24:7564-7571. [PMID: 38809695 DOI: 10.1021/acs.nanolett.4c00558] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2024]
Abstract
Photocurrents play a crucial role in various applications, including light detection, photovoltaics, and THz radiation generation. Despite the abundance of methods and materials for converting light into electrical signals, the use of metals in this context has been relatively limited. Nanostructures supporting surface plasmons in metals offer precise light manipulation and induce light-driven electron motion. Through the inverse design optimization of a gold nanostructure, we demonstrate enhanced volumetric, unidirectional, intense, and ultrafast photocurrents via a magneto-optical process derived from the inverse Faraday effect. This is achieved through fine-tuning the amplitude, polarization, and gradients in the local light field. The virtually instantaneous process allows dynamic photocurrent modulation by varying optical pulse duration, potentially yielding nanosources of intense, ultrafast, planar magnetic fields and frequency-tunable THz emission. These findings open avenues for ultrafast magnetic material manipulation and hold promise for nanoscale THz spectroscopy.
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Affiliation(s)
- Ye Mou
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Xingyu Yang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Marlo Vega
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-IRL3463, CNRS, Université de Sherbrooke, Université Grenoble Alpes, École Centrale de Lyon, INSA Lyon, Sherbrooke, J1K 0A5 Québec, Canada
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard de l'université, Sherbrooke, J1K OA5 Québec, Canada
- Université Paris-Saclay, Institut d'Optique Graduate School, CNRS, Laboratoire Charles Fabry, 91127 Palaiseau, France
| | - Romeo Zapata
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Bruno Gallas
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Jean-François Bryche
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-IRL3463, CNRS, Université de Sherbrooke, Université Grenoble Alpes, École Centrale de Lyon, INSA Lyon, Sherbrooke, J1K 0A5 Québec, Canada
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard de l'université, Sherbrooke, J1K OA5 Québec, Canada
| | - Alexandre Bouhelier
- Laboratoire Interdisciplinaire Carnot de Bourgogne, CNRS UMR 6303 Université de Bourgogne, 21000 Dijon, France
| | - Mathieu Mivelle
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
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5
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Watanabe H, Yanase Y. Magnetic parity violation and parity-time-reversal-symmetric magnets. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:373001. [PMID: 38899401 DOI: 10.1088/1361-648x/ad52dd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2024] [Accepted: 05/31/2024] [Indexed: 06/21/2024]
Abstract
Parity-time-reversal symmetry (PTsymmetry), a symmetry for the combined operations of space inversion (P) and time reversal (T), is a fundamental concept of physics and characterizes the functionality of materials as well asPandTsymmetries. In particular, thePT-symmetric systems can be found in the centrosymmetric crystals undergoing the parity-violating magnetic order which we call the odd-parity magnetic multipole order. While this spontaneous order leavesPTsymmetry intact, the simultaneous violation ofPandTsymmetries gives rise to various emergent responses that are qualitatively different from those allowed by the nonmagneticP-symmetry breaking or by the ferromagnetic order. In this review, we introduce candidates hosting the intriguing spontaneous order and overview the characteristic physical responses. Various off-diagonal and/or nonreciprocal responses are identified, which are closely related to the unusual electronic structures such as hidden spin-momentum locking and asymmetric band dispersion.
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Affiliation(s)
- Hikaru Watanabe
- Research Center for Advanced Science and Technology, University of Tokyo, Meguro-ku, Tokyo 153-8904, Japan
| | - Youichi Yanase
- Department of Physics, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan
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6
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Fang N, Wu C, Zhang Y, Li Z, Zhou Z. Perspectives: Light Control of Magnetism and Device Development. ACS NANO 2024; 18:8600-8625. [PMID: 38469753 DOI: 10.1021/acsnano.3c13002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/13/2024]
Abstract
Accurately controlling magnetic and spin states presents a significant challenge in spintronics, especially as demands for higher data storage density and increased processing speeds grow. Approaches such as light control are gradually supplanting traditional magnetic field methods. Traditionally, the modulation of magnetism was predominantly achieved through polarized light with the help of ultrafast light technologies. With the growing demand for energy efficiency and multifunctionality in spintronic devices, integrating photovoltaic materials into magnetoelectric systems has introduced more physical effects. This development suggests that sunlight will play an increasingly pivotal role in manipulating spin orientation in the future. This review introduces and concludes the influence of various light types on magnetism, exploring mechanisms such as magneto-optical (MO) effects, light-induced magnetic phase transitions, and spin photovoltaic effects. This review briefly summarizes recent advancements in the light control of magnetism, especially sunlight, and their potential applications, providing an optimistic perspective on future research directions in this area.
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Affiliation(s)
- Ning Fang
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
| | - Changqing Wu
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Yuzhe Zhang
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Zhongyu Li
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Ziyao Zhou
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
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7
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Han S, Ye L, Li Y, Huang B. Theoretical Understanding of Nonlinear Optical Properties in Solids: A Perspective. J Phys Chem Lett 2024:3323-3335. [PMID: 38498006 DOI: 10.1021/acs.jpclett.4c00360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/19/2024]
Abstract
Nonlinear optical (NLO) crystals have become a hot topic in chemical science and material physics, due to their essential role in laser technology, optical information, optoelectronics, and precision measurements. In this Perspective, we provide an overview of recent advances in second-order nonlinear optics, with a focus on two critical topics: second harmonic generation (SHG) and the bulk photovoltaic effect (BPVE). For SHG, we discuss recent progress in deep-ultraviolet (DUV) materials, highlighting their structural characteristics and nonlinear groups that contribute to their exceptional performance. For BPVE, we concentrate on the emerging field of low-dimensional materials, emphasizing their potential in a shift current. Additionally, we discuss the development of regulation approaches for NLO materials, which is vital for their practical application. Finally, we address the outlook for the field, including the challenges that must be overcome to further advance NLO materials research.
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Affiliation(s)
- Shengru Han
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Liangting Ye
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Yang Li
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing 100193, China
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8
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Xiang L, Jin H, Wang J. Quantifying the photocurrent fluctuation in quantum materials by shot noise. Nat Commun 2024; 15:2012. [PMID: 38443381 PMCID: PMC10914713 DOI: 10.1038/s41467-024-46264-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 02/21/2024] [Indexed: 03/07/2024] Open
Abstract
The DC photocurrent can detect the topology and geometry of quantum materials without inversion symmetry. Herein, we propose that the DC shot noise (DSN), as the fluctuation of photocurrent operator, can also be a diagnostic of quantum materials. Particularly, we develop the quantum theory for DSNs in gapped systems and identify the shift and injection DSNs by dividing the second-order photocurrent operator into off-diagonal and diagonal contributions, respectively. Remarkably, we find that the DSNs can not be forbidden by inversion symmetry, while the constraint from time-reversal symmetry depends on the polarization of light. Furthermore, we show that the DSNs also encode the geometrical information of Bloch electrons, such as the Berry curvature and the quantum metric. Finally, guided by symmetry, we apply our theory to evaluate the DSNs in monolayer GeS and bilayer MoS2 with and without inversion symmetry and find that the DSNs can be larger in centrosymmetric phase.
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Affiliation(s)
- Longjun Xiang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Hao Jin
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Jian Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China.
- Department of Physics, University of Hong Kong, Hong Kong, China.
- Department of Physics, The University of Science and Technology of China, Hefei, China.
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9
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Adamantopoulos T, Merte M, Go D, Freimuth F, Blügel S, Mokrousov Y. Orbital Rashba Effect as a Platform for Robust Orbital Photocurrents. PHYSICAL REVIEW LETTERS 2024; 132:076901. [PMID: 38427860 DOI: 10.1103/physrevlett.132.076901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2023] [Revised: 07/03/2023] [Accepted: 01/09/2024] [Indexed: 03/03/2024]
Abstract
Orbital current has emerged over the past years as one of the key novel concepts in magnetotransport. Here, we demonstrate that laser pulses can be used to generate large and robust nonrelativistic orbital currents in systems where the inversion symmetry is broken by the orbital Rashba effect. By referring to model and first principles tools, we demonstrate that orbital Rashba effect, accompanied by crystal field splitting, can mediate robust orbital photocurrents without a need for spin-orbit interaction even in metallic systems. We show that such nonrelativistic orbital photocurrents are translated into derivative photocurrents of spin when relativistic effects are taken into account. We thus promote orbital photocurrents as a promising platform for optical generation of currents of angular momentum, and discuss their possible applications.
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Affiliation(s)
- T Adamantopoulos
- Peter Grünberg Institut, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Department of Physics, RWTH Aachen University, 52056 Aachen, Germany
| | - M Merte
- Peter Grünberg Institut, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Department of Physics, RWTH Aachen University, 52056 Aachen, Germany
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - D Go
- Peter Grünberg Institut, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - F Freimuth
- Peter Grünberg Institut, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - S Blügel
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
| | - Y Mokrousov
- Peter Grünberg Institut, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany
- Institute of Physics, Johannes Gutenberg University Mainz, 55099 Mainz, Germany
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10
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Ma D, Arora A, Vignale G, Song JCW. Anomalous Skew-Scattering Nonlinear Hall Effect and Chiral Photocurrents in PT-Symmetric Antiferromagnets. PHYSICAL REVIEW LETTERS 2023; 131:076601. [PMID: 37656837 DOI: 10.1103/physrevlett.131.076601] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Revised: 05/31/2023] [Accepted: 07/11/2023] [Indexed: 09/03/2023]
Abstract
Berry curvature and skew scattering play central roles in determining both the linear and nonlinear anomalous Hall effects. Yet in PT-symmetric antiferromagnetic metals, Hall effects from either intrinsic Berry curvature mediated anomalous velocity or the conventional skew-scattering process individually vanish. Here we reveal an unexpected nonlinear Hall effect that relies on both Berry curvature and skew-scattering working in cooperation. This anomalous skew-scattering nonlinear Hall effect (ASN) is PT even and dominates the low-frequency nonlinear Hall effect for PT-symmetric antiferromagnetic metals. Surprisingly, we find that in addition to its Hall response, ASN produces helicity dependent photocurrents, in contrast to other known PT-even nonlinearities in metals that are helicity blind. This characteristic enables us to isolate ASN and establishes new photocurrent tools to interrogate the antiferromagnetic order of PT-symmetric metals.
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Affiliation(s)
- Da Ma
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Arpit Arora
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Giovanni Vignale
- The Institute for Functional Intelligent Materials (I-FIM), National University of Singapore, 4 Science Drive 2, Singapore 117544
| | - Justin C W Song
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
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11
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Xie Y, Morgenstein J, Bobay BG, Song R, Caturello NAMS, Sercel PC, Blum V, Mitzi DB. Chiral Cation Doping for Modulating Structural Symmetry of 2D Perovskites. J Am Chem Soc 2023; 145:17831-17844. [PMID: 37531203 DOI: 10.1021/jacs.3c04832] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/03/2023]
Abstract
Cation mixing in two-dimensional (2D) hybrid organic-inorganic perovskite (HOIP) structures represents an important degree of freedom for modifying organic templating effects and tailoring inorganic structures. However, the limited number of known cation-mixed 2D HOIP systems generally employ a 1:1 cation ratio for stabilizing the 2D perovskite structure. Here, we demonstrate a chiral-chiral mixed-cation system wherein a controlled small amount (<10%) of chiral cation S-2-MeBA (S-2-MeBA = (S)-(-)-2-methylbutylammonium) can be doped into (S-BrMBA)2PbI4 (S-BrMBA = (S)-(-)-4-bromo-α-methylbenzylammonium), modulating the structural symmetry from a higher symmetry (C2) to the lowest symmetry state (P1). This structural change occurs when the concentration of S-2-MeBA, measured by solution nuclear magnetic resonance, exceeds a critical level─specifically, for 1.4 ± 0.6%, the structure remains as C2, whereas 3.9 ± 1.4% substitution induces the structure change to P1 (this structure is stable to ∼7% substitution). Atomic occupancy analysis suggests that one specific S-BrMBA cation site is preferentially substituted by S-2-MeBA in the unit cell. Density functional theory calculations indicate that the spin splitting along different k-paths can be modulated by cation doping. A true circular dichroism band at the exciton energy of the 3.9% doping phase shows polarity inversion and a ∼45 meV blue shift of the Cotton-effect-type line-shape relative to (S-BrMBA)2PbI4. A trend toward suppressed melting temperature with higher doping concentration is also noted. The chiral cation doping system and the associated doping-concentration-induced structural transition provide a material design strategy for modulating and enhancing those emergent properties that are sensitive to different types of symmetry breaking.
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Affiliation(s)
- Yi Xie
- Thomas Lord Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, United States
- University Program in Materials Science and Engineering, Duke University, Durham, North Carolina 27708, United States
| | - Jack Morgenstein
- Thomas Lord Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, United States
| | - Benjamin G Bobay
- Duke University NMR Center, Duke University Medical Center, Durham, North Carolina 27710, United States
| | - Ruyi Song
- Department of Chemistry, Duke University, Durham, North Carolina 27708, United States
| | | | - Peter C Sercel
- Center for Hybrid Organic Inorganic Semiconductors for Energy, Golden, Colorado 80401, United States
| | - Volker Blum
- Thomas Lord Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, United States
- Department of Chemistry, Duke University, Durham, North Carolina 27708, United States
| | - David B Mitzi
- Thomas Lord Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708, United States
- Department of Chemistry, Duke University, Durham, North Carolina 27708, United States
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12
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Liang Z, Zhou X, Zhang L, Yu XL, Lv Y, Song X, Zhou Y, Wang H, Wang S, Wang T, Shum PP, He Q, Liu Y, Zhu C, Wang L, Chen X. Strong bulk photovoltaic effect in engineered edge-embedded van der Waals structures. Nat Commun 2023; 14:4230. [PMID: 37454221 DOI: 10.1038/s41467-023-39995-0] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 07/07/2023] [Indexed: 07/18/2023] Open
Abstract
Bulk photovoltaic effect (BPVE), a second-order nonlinear optical effect governed by the quantum geometric properties of materials, offers a promising approach to overcome the Shockley-Quiesser limit of traditional photovoltaic effect and further improve the efficiency of energy harvesting. Here, we propose an effective platform, the nano edges embedded in assembled van der Waals (vdW) homo- or hetero-structures with strong symmetry breaking, low dimensionality and abundant species, for BPVE investigations. The BPVE-induced photocurrents strongly depend on the orientation of edge-embedded structures and polarization of incident light. Reversed photocurrent polarity can be observed at left and right edge-embedded structures. Our work not only visualizes the unique optoelectronic effect in vdW nano edges, but also provides an effective strategy for achieving BPVE in engineered vdW structures.
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Affiliation(s)
- Zihan Liang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Xin Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Le Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Xiang-Long Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, China.
- International Quantum Academy, Shenzhen, China.
| | - Yan Lv
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xuefen Song
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yongheng Zhou
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Han Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Shuo Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Taihong Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Perry Ping Shum
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Qian He
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - Yanjun Liu
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China.
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13
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Tomarchio L, Mosesso L, Macis S, Nguyen LT, Grilli A, Romani M, Cestelli Guidi M, Cava RJ, Lupi S. Phonon Anharmonicity and Spin-Phonon Coupling in CrI 3. MATERIALS (BASEL, SWITZERLAND) 2023; 16:4909. [PMID: 37512184 PMCID: PMC10381855 DOI: 10.3390/ma16144909] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2023] [Revised: 07/01/2023] [Accepted: 07/06/2023] [Indexed: 07/30/2023]
Abstract
We report on the far-infrared, temperature-dependent optical properties of a CrI3 transition metal halide single crystal, a van der Waals ferromagnet (FM) with a Curie temperature of 61 K. In addition to the expected phonon modes determined by the crystalline symmetry, the optical reflectance and transmittance spectra of CrI3 single crystals show many other excitations as a function of temperature as a consequence of the combination of a strong lattice anharmonicity and spin-phonon coupling. This complex vibrational spectrum highlights the presence of entangled interactions among the different degrees of freedom in CrI3.
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Affiliation(s)
- Luca Tomarchio
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, 00185 Rome, Italy
- INFN Section of Rome, P.Le Aldo Moro, 2, 00185 Rome, Italy
| | - Lorenzo Mosesso
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, 00185 Rome, Italy
- INFN Section of Rome, P.Le Aldo Moro, 2, 00185 Rome, Italy
| | - Salvatore Macis
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, 00185 Rome, Italy
- INFN-Laboratori Nazionali di Frascati, Via Enrico Fermi 54, 00044 Rome, Italy
| | - Loi T Nguyen
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
| | - Antonio Grilli
- INFN-Laboratori Nazionali di Frascati, Via Enrico Fermi 54, 00044 Rome, Italy
| | - Martina Romani
- INFN-Laboratori Nazionali di Frascati, Via Enrico Fermi 54, 00044 Rome, Italy
| | | | - Robert J Cava
- Department of Chemistry, Princeton University, Princeton, NJ 08544, USA
| | - Stefano Lupi
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, 00185 Rome, Italy
- INFN Section of Rome, P.Le Aldo Moro, 2, 00185 Rome, Italy
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14
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Kaplan D, Holder T, Yan B. General nonlinear Hall current in magnetic insulators beyond the quantum anomalous Hall effect. Nat Commun 2023; 14:3053. [PMID: 37236923 DOI: 10.1038/s41467-023-38734-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2022] [Accepted: 05/08/2023] [Indexed: 05/28/2023] Open
Abstract
Can a generic magnetic insulator exhibit a Hall current? The quantum anomalous Hall effect (QAHE) is one example of an insulating bulk carrying a quantized Hall conductivity while insulators with zero Chern number present zero Hall conductance in the linear response regime. Here, we find that a general magnetic insulator possesses a nonlinear Hall conductivity quadratic to the electric field if the system breaks inversion symmetry, which can be identified as a new type of multiferroic coupling. This conductivity originates from an induced orbital magnetization due to virtual interband transitions. We identify three contributions to the wavepacket motion, a velocity shift, a positional shift, and a Berry curvature renormalization. In contrast to the crystalline solid, we find that this nonlinear Hall conductivity vanishes for Landau levels of a 2D electron gas, indicating a fundamental difference between the QAHE and the integer quantum Hall effect.
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Affiliation(s)
- Daniel Kaplan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Tobias Holder
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 7610001, Israel
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, 7610001, Israel.
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15
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Guan X, Zhang Y, Long X, Zhu GJ, Cao J. Tuning magnetocrystalline anisotropy by controlling the orbital electronic configuration of two-dimensional magnetic materials. NANOSCALE ADVANCES 2023; 5:2501-2507. [PMID: 37143799 PMCID: PMC10153100 DOI: 10.1039/d3na00003f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/02/2023] [Accepted: 03/26/2023] [Indexed: 05/06/2023]
Abstract
A suitable magnetic anisotropy energy (MAE) is a key factor for magnetic materials. However, an effective MAE control method has not yet been achieved. In this study, we propose a novel strategy to manipulate MAE by rearranging the d-orbitals of metal atoms with oxygen functionalized metallophthalocyanine (MPc) by first-principles calculations. By the dual regulation of electric field and atomic adsorption, we have achieved a substantial amplification of the single regulation method. The use of O atoms to modify the metallophthalocyanine (MPc) sheets effectively adjusts the orbital arrangement of the electronic configuration in the d-orbitals of the transition metal near the Fermi level, thereby modulating the MAE of the structure. More importantly, the electric field amplifies the effect of electric-field regulation by adjusting the distance between the O atom and metal atom. Our results demonstrate a new approach to modulating the MAE of two-dimensional magnetic films for practical application in information storage.
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Affiliation(s)
- Xiaoxiao Guan
- Department of Physics, Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University Hunan 411105 China
| | - Yun Zhang
- Department of Physics and Information Technology, Baoji University of Arts and Sciences Baoji 721016 China
| | - Xia Long
- Department of Physics, Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University Hunan 411105 China
| | - Guo-Jun Zhu
- Department of Physics, Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University Hunan 411105 China
- Key Laboratory for Computational Physical Sciences (MOE), State Key Laboratory of Surface Physics, Department of Physics, Fudan University Shanghai 200433 China
| | - Juexian Cao
- Department of Physics, Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University Hunan 411105 China
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16
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Chen J, Ma G, Gong B, Deng C, Zhang M, Guo K, Cui R, Wu Y, Lv M, Wang X. Bulk Photovoltaic Current Mechanisms in All-Inorganic Perovskite Multiferroic Materials. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:429. [PMID: 36770390 PMCID: PMC9920813 DOI: 10.3390/nano13030429] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 01/17/2023] [Accepted: 01/17/2023] [Indexed: 06/18/2023]
Abstract
After the discovery of bulk photovoltaic effect more than half a century ago, ferro-electrical and magneto-optical experiments have provided insights into various related topics, revealing above bandgap open voltages and non-central symmetrical current mechanisms. However, the nature of the photon-generated carriers responses and their microscopic mechanisms remain unclear. Here, all-inorganic perovskite Bi0.85Gd0.15Fe1-xMnxO3 thin films were prepared by a sol-gel process and the effects of Gd and Mn co-doped bismuth ferrites on their microtopography, grain boundries, multiferroic, and optical properties were studied. We discovered a simple "proof of principle" type new method that by one-step measuring the leakage current, one can demonstrate the value of photo generated current being the sum of ballistic current and shift current, which are combined to form the so-called bulk photovoltaic current, and can be related to the prototype intrinsic properties such as magneto-optical coupling and ferroelectric polarization. This result has significant potential influence on design principles for engineering multiferroic optoelectronic devices and future photovoltaic industry development.
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Affiliation(s)
- Jiazheng Chen
- Key Laboratory of Functional Composite Materials of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guizhou 550025, China
| | - Guobin Ma
- Key Laboratory of Functional Composite Materials of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guizhou 550025, China
- School of Electronics and Information Engineering, Guiyang University, Guiyang 550005, China
| | | | - Chaoyong Deng
- School of Electronics and Information Engineering, Guiyang University, Guiyang 550005, China
| | - Min Zhang
- Key Laboratory of Functional Composite Materials of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guizhou 550025, China
| | - Kaixin Guo
- School of Electronics and Information Engineering, Guiyang University, Guiyang 550005, China
| | - Ruirui Cui
- Key Laboratory of Functional Composite Materials of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guizhou 550025, China
| | - Yunkai Wu
- Key Laboratory of Functional Composite Materials of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guizhou 550025, China
| | - Menglan Lv
- School of Chemistry and Chemical Engineering, Guizhou University, Guizhou 550025, China
| | - Xu Wang
- Key Laboratory of Functional Composite Materials of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guizhou 550025, China
- Guiyang Makers Center, Guizhou 550025, China
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17
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Liu L, Liu W, Cheng B, Cui B, Hu J. Switchable Giant Bulk Photocurrents and Photo-spin-currents in Monolayer PT-Symmetric Antiferromagnet MnPSe 3. J Phys Chem Lett 2023; 14:370-378. [PMID: 36607806 DOI: 10.1021/acs.jpclett.2c03383] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Converting light into steady currents and spin-currents in two-dimensional (2D) platform is essential for future energy harvesting and spintronics. We show that the giant and modulable bulk photovoltaic effects (BPVEs) can be achieved in air-stable 2D antiferromagnet (AFM) monolayer MnPSe3, with nonlinear photoconductance >4000 nm·μA/V2 and photo-spin-conductance >2000 (nm·μA/V2ℏ/2e) in the visible spectrum. The propagation and the spin-polarizations of photocurrents can be switched via simply rotating the Néel vector. We unveil that the PT-symmetry, mirror symmetries, and spin-orbital-couplings are the keys for the observed sizable and controllable 2D BPVEs. All the results provide insights into the BPVEs of 2D AFM and suggest that the layered MnPSe3 is an outstanding 2D platform for energy device and photo-spintronics.
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Affiliation(s)
- Liang Liu
- School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan250100, China
| | - Weikang Liu
- School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan250100, China
| | - Bin Cheng
- School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan250100, China
| | - Bin Cui
- School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan250100, China
| | - Jifan Hu
- School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan250100, China
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18
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Zhang C, Guo P, Zhou J. Tailoring Bulk Photovoltaic Effects in Magnetic Sliding Ferroelectric Materials. NANO LETTERS 2022; 22:9297-9305. [PMID: 36441961 DOI: 10.1021/acs.nanolett.2c02802] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The bulk photovoltaic effect that is intimately associated with crystalline symmetry has been extensively studied in various nonmagnetic materials, especially ferroelectrics with a switchable electric polarization. In order to further engineer the symmetry, one could resort to spin-polarized systems possessing an extra magnetic degree of freedom. Here, we investigate the bulk photovoltaic effect in two-dimensional magnetic sliding ferroelectric (MSFE) systems, illustrated in VSe2, FeCl2, and CrI3 bilayers. The transition metal elements in these systems exhibit intrinsic spin polarization, and the stacking mismatch between the two layers produces a finite out-of-plane electric dipole. Through symmetry analyses and first-principles calculations, we show that photoinduced in-plane bulk photovoltaic current can be effectively tuned by their magnetic order and the out-of-plane dipole moment. The underlying mechanism is elucidated from the quantum metric dipole distribution in the reciprocal space. The ease of the fabrication and manipulation of MSFEs guarantee practical optoelectronic applications.
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Affiliation(s)
- Chunmei Zhang
- School of Physics, Northwest University, Xi'an710069, China
| | - Ping Guo
- School of Physics, Northwest University, Xi'an710069, China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an710049, China
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19
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Ai W, Hu X, Yang J, Lu C, Sun L. Selective sensing properties and enhanced ferromagnetism in CrI 3monolayer via gas adsorption. NANOTECHNOLOGY 2022; 34:065202. [PMID: 36347026 DOI: 10.1088/1361-6528/aca0fa] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/03/2022] [Accepted: 11/08/2022] [Indexed: 06/16/2023]
Abstract
Recent fabrication of chromium triiodide (CrI3) monolayers has raised potential prospects of developing two-dimensional (2D) ferromagnetic materials for spintronic device applications. The low Curie temperature has stimulated further interest for improving the ferromagnetic stability of CrI3monolayer. Here, based on density functional theory calculations, we investigated the adsorption energy, charge transfer, electronic and magnetic properties of gases (CO, CO2, N2, NH3, NO, NO2, O2, and SO2) adsorption on the CrI3monolayer. It is found that CrI3is sensitive to the NH3, NO, and NO2adsorption due to the high adsorption energy and large charge transfer. The electrical transport results show that the conductivity of CrI3monolayer is significantly reduced with the adsorption of N-based gases, suggesting that CrI3exhibits superior sensitivity and selectivity toward N-based gases. In addition, the ferromagnetic stability and Curie temperature (TC) of CrI3monolayer can be effectively enhanced by the adsorption of magnetic gases (NO, NO2, O2). This work not only demonstrates that CrI3monolayer can be used as a promising candidate for gas sensing, but also brings further interest to tune the electronic and magnetic properties of 2D ferromagnetic materials via gas adsorption.
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Affiliation(s)
- Wen Ai
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
| | - Xiaohui Hu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, People's Republic of China
| | - Jian Yang
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, People's Republic of China
| | - Chunhua Lu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 211816, People's Republic of China
- Jiangsu Collaborative Innovation Center for Advanced Inorganic Function Composites, Nanjing Tech University, Nanjing 211816, People's Republic of China
| | - Litao Sun
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing 210096, People's Republic of China
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20
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Legg HF, Rößler M, Münning F, Fan D, Breunig O, Bliesener A, Lippertz G, Uday A, Taskin AA, Loss D, Klinovaja J, Ando Y. Giant magnetochiral anisotropy from quantum-confined surface states of topological insulator nanowires. NATURE NANOTECHNOLOGY 2022; 17:696-700. [PMID: 35551241 PMCID: PMC9300460 DOI: 10.1038/s41565-022-01124-1] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/05/2021] [Accepted: 03/22/2022] [Indexed: 06/15/2023]
Abstract
Wireless technology relies on the conversion of alternating electromagnetic fields into direct currents, a process known as rectification. Although rectifiers are normally based on semiconductor diodes, quantum mechanical non-reciprocal transport effects that enable a highly controllable rectification were recently discovered1-9. One such effect is magnetochiral anisotropy (MCA)6-9, in which the resistance of a material or a device depends on both the direction of the current flow and an applied magnetic field. However, the size of rectification possible due to MCA is usually extremely small because MCA relies on inversion symmetry breaking that leads to the manifestation of spin-orbit coupling, which is a relativistic effect6-8. In typical materials, the rectification coefficient γ due to MCA is usually ∣γ∣ ≲ 1 A-1 T-1 (refs. 8-12) and the maximum values reported so far are ∣γ∣ ≈ 100 A-1 T-1 in carbon nanotubes13 and ZrTe5 (ref. 14). Here, to overcome this limitation, we artificially break the inversion symmetry via an applied gate voltage in thin topological insulator (TI) nanowire heterostructures and theoretically predict that such a symmetry breaking can lead to a giant MCA effect. Our prediction is confirmed via experiments on thin bulk-insulating (Bi1-xSbx)2Te3 (BST) TI nanowires, in which we observe an MCA consistent with theory and ∣γ∣ ≈ 100,000 A-1 T-1, a very large MCA rectification coefficient in a normal conductor.
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Affiliation(s)
- Henry F Legg
- Department of Physics, University of Basel, Basel, Switzerland.
| | - Matthias Rößler
- Physics Institute II, University of Cologne, Cologne, Germany
| | - Felix Münning
- Physics Institute II, University of Cologne, Cologne, Germany
| | - Dingxun Fan
- Physics Institute II, University of Cologne, Cologne, Germany
| | - Oliver Breunig
- Physics Institute II, University of Cologne, Cologne, Germany
| | | | - Gertjan Lippertz
- Physics Institute II, University of Cologne, Cologne, Germany
- Quantum Solid State Physics, KU Leuven, Leuven, Belgium
| | - Anjana Uday
- Physics Institute II, University of Cologne, Cologne, Germany
| | - A A Taskin
- Physics Institute II, University of Cologne, Cologne, Germany
| | - Daniel Loss
- Department of Physics, University of Basel, Basel, Switzerland
| | | | - Yoichi Ando
- Physics Institute II, University of Cologne, Cologne, Germany.
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21
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Tomarchio L, Macis S, Mosesso L, Nguyen LT, Grilli A, Guidi MC, Cava RJ, Lupi S. Low energy electrodynamics of CrI 3 layered ferromagnet. Sci Rep 2021; 11:23405. [PMID: 34862444 PMCID: PMC8642409 DOI: 10.1038/s41598-021-02918-4] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2021] [Accepted: 11/16/2021] [Indexed: 11/09/2022] Open
Abstract
We report on the optical properties from terahertz (THz) to Near-Infrared (NIR) of the layered magnetic compound CrI3 at various temperatures, both in the paramagnetic and ferromagnetic phase. In the NIR spectral range, we observe an insulating electronic gap around 1.1 eV which strongly hardens with decreasing temperature. The blue shift observed represents a record in insulating materials and it is a fingerprint of a strong electron-phonon interaction. Moreover, a further gap hardening is observed below the Curie temperature, indicating the establishment of an effective interaction between electrons and magnetic degrees of freedom in the ferromagnetic phase. Similar interactions are confirmed by the disappearance of some phonon modes in the same phase, as expected from a spin-lattice interaction theory. Therefore, the optical properties of CrI3 reveal a complex interaction among electronic, phononic and magnetic degrees of freedom, opening many possibilities for its use in 2-Dimensional heterostructures.
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Affiliation(s)
- Luca Tomarchio
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, 00185, Rome, Italy
- INFN section of Rome, P.Le Aldo Moro, 2, 00185, Rome, Italy
| | - Salvatore Macis
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, 00185, Rome, Italy
- INFN - Laboratori Nazionali di Frascati, via Enrico Fermi 54, 00044, Frascati, Rome, Italy
| | - Lorenzo Mosesso
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, 00185, Rome, Italy
| | - Loi T Nguyen
- Department of Chemistry, Princeton University, Princeton, NJ, 08544, USA
| | - Antonio Grilli
- INFN - Laboratori Nazionali di Frascati, via Enrico Fermi 54, 00044, Frascati, Rome, Italy
| | | | - Robert J Cava
- Department of Chemistry, Princeton University, Princeton, NJ, 08544, USA
| | - Stefano Lupi
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, 00185, Rome, Italy.
- INFN - Laboratori Nazionali di Frascati, via Enrico Fermi 54, 00044, Frascati, Rome, Italy.
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22
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Ma Q, Grushin AG, Burch KS. Topology and geometry under the nonlinear electromagnetic spotlight. NATURE MATERIALS 2021; 20:1601-1614. [PMID: 34127824 DOI: 10.1038/s41563-021-00992-7] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2020] [Accepted: 03/19/2021] [Indexed: 06/12/2023]
Abstract
For many materials, a precise knowledge of their dispersion spectra is insufficient to predict their ordered phases and physical responses. Instead, these materials are classified by the geometrical and topological properties of their wavefunctions. A key challenge is to identify and implement experiments that probe or control these quantum properties. In this Review, we describe recent progress in this direction, focusing on nonlinear electromagnetic responses that arise directly from quantum geometry and topology. We give an overview of the field by discussing theoretical ideas, experiments and the materials that drive them. We conclude by discussing how these techniques can be combined with device architectures to uncover, probe and ultimately control quantum phases with emergent topological and correlated properties.
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Affiliation(s)
- Qiong Ma
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Adolfo G Grushin
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Kenneth S Burch
- Department of Physics, Boston College, Chestnut Hill, MA, USA.
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23
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Li Y, Fu J, Mao X, Chen C, Liu H, Gong M, Zeng H. Enhanced bulk photovoltaic effect in two-dimensional ferroelectric CuInP 2S 6. Nat Commun 2021; 12:5896. [PMID: 34625541 PMCID: PMC8501070 DOI: 10.1038/s41467-021-26200-3] [Citation(s) in RCA: 55] [Impact Index Per Article: 18.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2021] [Accepted: 09/21/2021] [Indexed: 11/30/2022] Open
Abstract
The photocurrent generation in photovoltaics relies essentially on the interface of p-n junction or Schottky barrier with the photoelectric efficiency constrained by the Shockley-Queisser limit. The recent progress has shown a promising route to surpass this limit via the bulk photovoltaic effect for crystals without inversion symmetry. Here we report the bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6 with enhanced photocurrent density by two orders of magnitude higher than conventional bulk ferroelectric perovskite oxides. The bulk photovoltaic effect is inherently associated to the room-temperature polar ordering in two-dimensional CuInP2S6. We also demonstrate a crossover from two-dimensional to three-dimensional bulk photovoltaic effect with the observation of a dramatic decrease in photocurrent density when the thickness of the two-dimensional material exceeds the free path length at around 40 nm. This work spotlights the potential application of ultrathin two-dimensional ferroelectric materials for the third-generation photovoltaic cells.
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Affiliation(s)
- Yue Li
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Jun Fu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Xiaoyu Mao
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Chen Chen
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Heng Liu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China
| | - Ming Gong
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, 230026, Hefei, People's Republic of China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China.
| | - Hualing Zeng
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Science at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China.
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, Department of Physics, University of Science and Technology of China, 230026, Hefei, Anhui, People's Republic of China.
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Guo K, Wang X, Zhang R, Fu Z, Zhang L, Ma G, Deng C. Multiferroic oxide BFCNT/BFCO heterojunction black silicon photovoltaic devices. LIGHT, SCIENCE & APPLICATIONS 2021; 10:201. [PMID: 34565801 PMCID: PMC8473570 DOI: 10.1038/s41377-021-00644-0] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/09/2021] [Revised: 08/18/2021] [Accepted: 09/10/2021] [Indexed: 06/13/2023]
Abstract
Multiferroics are being studied increasingly in applications of photovoltaic devices for the carrier separation driven by polarization and magnetization. In this work, textured black silicon photovoltaic devices are fabricated with Bi6Fe1.6Co0.2Ni0.2Ti3O18/Bi2FeCrO6 (BFCNT/BFCO) multiferroic heterojunction as an absorber and graphene as an anode. The structural and optical analyses showed that the bandgap of Aurivillius-typed BFCNT and double perovskite BFCO are 1.62 ± 0.04 eV and 1.74 ± 0.04 eV respectively, meeting the requirements for the active layer in solar cells. Under the simulated AM 1.5 G illumination, the black silicon photovoltaic devices delivered a photoconversion efficiency (η) of 3.9% with open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) of 0.75 V, 10.8 mA cm-2, and 48.3%, respectively. Analyses of modulation of an applied electric and magnetic field on the photovoltaic properties revealed that both polarization and magnetization of multiferroics play an important role in tuning the built-in electric field and the transport mechanisms of charge carriers, thus providing a new idea for the design of future high-performance multiferroic oxide photovoltaic devices.
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Affiliation(s)
- Kaixin Guo
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, Guizhou, China
| | - Xu Wang
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, Guizhou, China
| | - Rongfen Zhang
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, Guizhou, China
| | - Zhao Fu
- Guizhou College of Electronic Science and Technology, Guiyang, 561113, Guizhou, China
| | - Liangyu Zhang
- Guizhou College of Electronic Science and Technology, Guiyang, 561113, Guizhou, China
| | - Guobin Ma
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, Guizhou, China
| | - Chaoyong Deng
- Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang, 550025, Guizhou, China.
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25
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Kaneko T, Sun Z, Murakami Y, Golež D, Millis AJ. Bulk Photovoltaic Effect Driven by Collective Excitations in a Correlated Insulator. PHYSICAL REVIEW LETTERS 2021; 127:127402. [PMID: 34597083 DOI: 10.1103/physrevlett.127.127402] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2020] [Accepted: 08/10/2021] [Indexed: 06/13/2023]
Abstract
We investigate the bulk photovoltaic effect, which rectifies light into electric current, in a collective quantum state with correlation driven electronic ferroelectricity. We show via explicit real-time dynamical calculations that the effect of the applied electric field on the electronic order parameter leads to a strong enhancement of the bulk photovoltaic effect relative to the values obtained in a conventional insulator. The enhancements include both resonant enhancements at sub-band-gap frequencies, arising from excitation of optically active collective modes, and broadband enhancements arising from nonresonant deformations of the electronic order. The deformable electronic order parameter produces an injection current contribution to the bulk photovoltaic effect that is entirely absent in a rigid-band approximation to a time-reversal symmetric material. Our findings establish that correlation effects can lead to the bulk photovoltaic effect and demonstrate that the collective behavior of ordered states can yield large nonlinear optical responses.
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Affiliation(s)
- Tatsuya Kaneko
- Department of Physics, Columbia University, New York, New York 10027, USA
| | - Zhiyuan Sun
- Department of Physics, Columbia University, New York, New York 10027, USA
| | - Yuta Murakami
- Department of Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8551, Japan
| | - Denis Golež
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, USA
- Faculty of Mathematics and Physics, University of Ljubljana, Jadranska 19, SI-1000 Ljubljana, Slovenia
- Jozef Stefan Institute, Jamova 39, SI-1000 Ljubljana, Slovenia
| | - Andrew J Millis
- Department of Physics, Columbia University, New York, New York 10027, USA
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, USA
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26
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Matsyshyn O, Piazza F, Moessner R, Sodemann I. Rabi Regime of Current Rectification in Solids. PHYSICAL REVIEW LETTERS 2021; 127:126604. [PMID: 34597109 DOI: 10.1103/physrevlett.127.126604] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2021] [Revised: 06/29/2021] [Accepted: 08/26/2021] [Indexed: 06/13/2023]
Abstract
We investigate rectified currents in response to oscillating electric fields in systems lacking inversion and time-reversal symmetries. These currents, in second-order perturbation theory, are inversely proportional to the relaxation rate, and, therefore, naively diverge in the ideal clean limit. Employing a combination of the nonequilibrium Green function technique and Floquet theory, we show that this is an artifact of perturbation theory, and that there is a well-defined periodic steady state akin to Rabi oscillations leading to finite rectified currents in the limit of weak coupling to a thermal bath. In this Rabi regime the rectified current scales as the square root of the radiation intensity, in contrast with the linear scaling of the perturbative regime, allowing us to readily diagnose it in experiments. More generally, our description provides a smooth interpolation from the ideal periodic Gibbs ensemble describing the Rabi oscillations of a closed system to the perturbative regime of rapid relaxation due to strong coupling to a thermal bath.
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Affiliation(s)
- Oles Matsyshyn
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
| | - Francesco Piazza
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
| | - Roderich Moessner
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
| | - Inti Sodemann
- Max Planck Institute for the Physics of Complex Systems, Dresden 01187, Germany
- Department of Physics and Astronomy, University of California, Irvine, California 92697, USA
- Institut für Theoretische Physik, Universität Leipzig, D-04103 Leipzig, Germany
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27
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Song T, Anderson E, Tu MWY, Seyler K, Taniguchi T, Watanabe K, McGuire MA, Li X, Cao T, Xiao D, Yao W, Xu X. Spin photovoltaic effect in magnetic van der Waals heterostructures. SCIENCE ADVANCES 2021; 7:eabg8094. [PMID: 34516904 PMCID: PMC8442881 DOI: 10.1126/sciadv.abg8094] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/29/2021] [Accepted: 07/13/2021] [Indexed: 06/13/2023]
Abstract
The development of van der Waals (vdW) crystals and their heterostructures has created a fascinating platform for exploring optoelectronic properties in the two-dimensional (2D) limit. With the recent discovery of 2D magnets, the control of the spin degree of freedom can be integrated to realize 2D spin-optoelectronics. Here, we report spin photovoltaic effects in vdW heterostructures of 2D magnet chromium triiodide (CrI3) sandwiched by graphene contacts. The photocurrent displays a distinct dependence on light helicity, which can be tuned by varying the magnetic states and photon energy. Circular polarization–resolved absorption measurements reveal that these observations originate from magnetic order–coupled and, thus, helicity-dependent charge-transfer excitons. The photocurrent displays multiple plateaus as the magnetic field is swept, associated with different CrI3 spin configurations. Giant photo-magnetocurrent is observed, which tends to infinity for a small applied bias. Our results pave the way to explore emergent photospintronics by engineering magnetic vdW heterostructures.
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Affiliation(s)
- Tiancheng Song
- Department of Physics, University of Washington, Seattle, WA 98195, USA
| | - Eric Anderson
- Department of Physics, University of Washington, Seattle, WA 98195, USA
| | | | - Kyle Seyler
- Department of Physics, University of Washington, Seattle, WA 98195, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Michael A. McGuire
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA
| | - Xiaosong Li
- Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195, USA
| | - Ting Cao
- Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195, USA
| | - Di Xiao
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213, USA
| | - Wang Yao
- Department of Physics, University of Hong Kong, Hong Kong, China
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA 98195, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195, USA
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28
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Fei R, Yu S, Lu Y, Zhu L, Yang L. Switchable Enhanced Spin Photocurrent in Rashba and Cubic Dresselhaus Ferroelectric Semiconductors. NANO LETTERS 2021; 21:2265-2271. [PMID: 33645230 DOI: 10.1021/acs.nanolett.1c00116] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Generating and controlling spin current (SC) are of central interest in spin physics and applications. To date, the spin-orbit interaction (SOI) is an established pathway to generate SC through the spin-charge current conversion. We predict an efficient spin-light conversion via the Rashba and higher-order cubic Dresselhaus SOIs in ferroelectrics. Different from the known Edelstein effect, where SC is created by the nonequilibrium spin density, our predicted spin-polarized current is from direct interactions between light and unique spin textures generated by SOI in ferroelectrics. Using first-principles simulations, we demonstrate these concepts by calculating the DC spin photocurrent in a prototypical Rashba ferroelectric, α-GeTe. The photoinduced SC is about 2 orders of magnitude larger than the charge photocurrent. More importantly, we can conveniently switch the direction of SC by an applied electric field via inverting the spin textures. These predictions give hope to generating and controlling light-driven SC via a nonvolatile electric field.
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Affiliation(s)
- Ruixiang Fei
- Department of Physics, Washington University in St Louis, St. Louis, Missouri 63130, United States
| | - Shuaiqin Yu
- College of Ocean Science and Engineering, Shanghai Maritime University, Shanghai 201306, People's Republic of China
| | - Yan Lu
- Department of Physics, Washington University in St Louis, St. Louis, Missouri 63130, United States
- Department of Physics, Nanchang University, Nanchang 330031, People's Republic of China
| | - Linghan Zhu
- Department of Physics, Washington University in St Louis, St. Louis, Missouri 63130, United States
| | - Li Yang
- Department of Physics, Washington University in St Louis, St. Louis, Missouri 63130, United States
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States
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29
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Shao YC, Karki B, Huang W, Feng X, Sumanasekera G, Guo JH, Chuang YD, Freelon B. Spectroscopic Determination of Key Energy Scales for the Base Hamiltonian of Chromium Trihalides. J Phys Chem Lett 2021; 12:724-731. [PMID: 33400873 DOI: 10.1021/acs.jpclett.0c03476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The van der Waals (vdW) chromium trihalides (CrX3) exhibit field-tunable, two-dimensional magnetic orders that vary with the halogen species and the number of layers. Their magnetic ground states with proximity in energies are sensitive to the degree of ligand-metal (p-d) hybridization and relevant modulations in the Cr d-orbital interactions. We use soft X-ray absorption (XAS) and resonant inelastic X-ray scattering (RIXS) spectroscopy at Cr L-edge along with the atomic multiplet simulations to determine the key energy scales such as the crystal field 10 Dq and interorbital Coulomb interactions under different ligand metal charge transfer (LMCT) in CrX3 (X= Cl, Br, and I). Through this systematic study, we show that our approach compared to the literature has yielded a set of more reliably determined parameters for establishing a base Hamiltonian for CrX3.
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Affiliation(s)
- Y C Shao
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Physics, University of Houston, Houston, Texas 77204, United States
| | - B Karki
- Department of Physics and Astronomy, University of Louisville, Louisville, Kentucky 40292, United States
| | - W Huang
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and InformationTechnology, Chinese Academy of Sciences, Shanghai 200050, China
| | - X Feng
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - G Sumanasekera
- Department of Physics and Astronomy, University of Louisville, Louisville, Kentucky 40292, United States
| | - J-H Guo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Y-D Chuang
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - B Freelon
- Department of Physics, University of Houston, Houston, Texas 77204, United States
- Texas Center for Superconductivity, University of Houston, Houston Texas 77204, United States
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30
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Wu N, Zhang XJ, Liu BG. Strain-enhanced giant Rashba spin splitting in ultrathin KTaO 3 films for spin-polarized photocurrents. RSC Adv 2020; 10:44088-44095. [PMID: 35517182 PMCID: PMC9058490 DOI: 10.1039/d0ra08745a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2020] [Accepted: 11/24/2020] [Indexed: 12/26/2022] Open
Abstract
Strong Rashba effects at semiconductor surfaces and interfaces have attracted great attention for basic scientific exploration and practical applications. Here, we show through first-principles investigation that applying biaxial stress can cause tunable and giant Rashba effects in ultrathin KTaO3 (KTO) (001) films with the most stable surfaces. When increasing the in-plane compressive strain to −5%, the Rashba spin splitting energy reaches ER = 140 meV, corresponding to the Rashba coupling constant αR = 1.3 eV Å. We investigate its strain-dependent crystal structures, energy bands, and related properties, and thereby elucidate the mechanism for the giant Rashba effects. Further calculations show that the giant Rashba spin splitting can remain or be enhanced when capping layer and/or Si substrate are added, and a SrTiO3 capping can make the Rashba spin splitting energy reach the record 190 meV. Furthermore, it is elucidated that strong circular photogalvanic effect can be achieved for spin-polarized photocurrents in the KTO thin films or related heterostructures, which is promising for future spintronic and optoelectronic applications. Strong Rashba effects at semiconductor surfaces and interfaces have attracted attention for exploration and applications. We show with first-principles investigation that applying biaxial stress can cause tunable and giant Rashba effects in ultrathin KTaO3 (KTO) (001) films.![]()
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Affiliation(s)
- Ning Wu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190 China .,School of Physical Sciences, University of Chinese Academy of Sciences Beijing 100190 China
| | - Xue-Jing Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190 China .,School of Physical Sciences, University of Chinese Academy of Sciences Beijing 100190 China
| | - Bang-Gui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190 China .,School of Physical Sciences, University of Chinese Academy of Sciences Beijing 100190 China
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31
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Kaplan D, Holder T, Yan B. Nonvanishing Subgap Photocurrent as a Probe of Lifetime Effects. PHYSICAL REVIEW LETTERS 2020; 125:227401. [PMID: 33315436 DOI: 10.1103/physrevlett.125.227401] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2020] [Accepted: 11/04/2020] [Indexed: 06/12/2023]
Abstract
For semiconductors and insulators, it is commonly believed that in-gap transitions into nonlocalized states are smoothly suppressed in the clean limit; i.e., at zero temperature, their contribution vanishes due to the unavailability of states. We present a novel type of subgap response which shows that this intuition does not generalize beyond linear response. Namely, we find that the dc current due to the bulk photovoltaic effect can be finite and mostly temperature independent in an allowed window of subgap transitions. We expect that a moderate range of excitation energies lies between the bulk energy gap and the mobility edge where this effect is observable. Using a simplified relaxation time model for the band broadening, we find the subgap dc current to be temperature independent for noninteracting systems but temperature dependent for strongly interacting systems. Thus, the subgap response may be used to distinguish whether a state is single-particle localized or many-body localized.
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Affiliation(s)
- Daniel Kaplan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Tobias Holder
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
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32
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Kundu AK, Liu Y, Petrovic C, Valla T. Valence band electronic structure of the van der Waals ferromagnetic insulators: VI[Formula: see text] and CrI[Formula: see text]. Sci Rep 2020; 10:15602. [PMID: 32973193 PMCID: PMC7515918 DOI: 10.1038/s41598-020-72487-5] [Citation(s) in RCA: 16] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2020] [Accepted: 08/28/2020] [Indexed: 12/03/2022] Open
Abstract
Ferromagnetic van der Waals (vdW) insulators are of great scientific interest for their promising applications in spintronics. It has been indicated that in the two materials within this class, CrI[Formula: see text] and VI[Formula: see text], the magnetic ground state, the band gap, and the Fermi level could be manipulated by varying the layer thickness, strain or doping. To understand how these factors impact the properties, a detailed understanding of the electronic structure would be required. However, the experimental studies of the electronic structure of these materials are still very sparse. Here, we present the detailed electronic structure of CrI[Formula: see text] and VI[Formula: see text] measured by angle-resolved photoemission spectroscopy (ARPES). Our results show a band-gap of the order of 1 eV, sharply contrasting some theoretical predictions such as Dirac half-metallicity and metallic phases, indicating that the intra-atomic interaction parameter (U) and spin-orbit coupling (SOC) were not properly accounted for in the calculations. We also find significant differences in the electronic properties of these two materials, in spite of similarities in their crystal structure. In CrI[Formula: see text], the valence band maximum is dominated by the I 5p, whereas in VI[Formula: see text] it is dominated by the V 3d derived states. Our results represent valuable input for further improvements in the theoretical modeling of these systems.
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Affiliation(s)
- Asish K. Kundu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973 USA
| | - Yu Liu
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973 USA
- Present Address: Los Alamos National Laboratory, MS K764, Los Alamos, NM 87545 USA
| | - C. Petrovic
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973 USA
| | - T. Valla
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973 USA
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33
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Soriano D, Katsnelson MI, Fernández-Rossier J. Magnetic Two-Dimensional Chromium Trihalides: A Theoretical Perspective. NANO LETTERS 2020; 20:6225-6234. [PMID: 32787171 DOI: 10.1021/acs.nanolett.0c02381] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The discovery of ferromagnetic order in monolayer two-dimensional (2D) crystals has opened a new venue in the field of 2D materials. Two-dimensional magnets are not only interesting on their own, but their integration in van der Waals heterostructures allows for the observation of new and exotic effects in the ultrathin limit. The family of chromium trihalides, CrI3, CrBr3, and CrCl3, is so far the most studied among magnetic 2D crystals. In this Mini Review, we provide a perspective of the state of the art of the theoretical understanding of magnetic 2D trihalides, most of which will also be relevant for other 2D magnets, such as vanadium trihalides. We discuss both the well-established facts, such as the origin of the magnetic moment and magnetic anisotropy, and address as well open issues such as the nature of the anisotropic spin couplings and the magnitude of the magnon gap. Recent theoretical predictions on Moiré magnets and magnetic skyrmions are also discussed. Finally, we give some prospects about the future interest of these materials and possible device applications.
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Affiliation(s)
- D Soriano
- Institute for Molecules and Materials, Radboud University, NL-6525 AJ Nijmegen, The Netherlands
| | - M I Katsnelson
- Institute for Molecules and Materials, Radboud University, NL-6525 AJ Nijmegen, The Netherlands
| | - J Fernández-Rossier
- QuantaLab, International Iberian Nanotechnology Laboratory (INL), Avenido Mestre José Veiga, 4715-330 Braga, Portugal
- Departamento de Física Aplicada, Universidad de Alicante, 03690, Alicante, Spain
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34
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Wang Q, Zhou C, Chai Y. Breaking symmetry in device design for self-driven 2D material based photodetectors. NANOSCALE 2020; 12:8109-8118. [PMID: 32236235 DOI: 10.1039/d0nr01326a] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
The advent of graphene and other two-dimensional (2D) materials offers great potential for optoelectronic applications. Various device structures and novel mechanisms have been proposed to realize photodetectors with unique detecting properties. In this minireview, we focus on a self-driven photodetector that has great potential for low-power or even powerless operation required in the internet of things and wearable electronics. To address the general principle of self-driven properties, we propose and elaborate the concept of symmetry breaking in 2D material based self-driven photodetectors. We discuss various mechanisms of breaking symmetry for self-driven photodetectors, including asymmetrical contact engineering, field-induced asymmetry, PN homojunctions, and PN heterostructures. Typical device examples based on these mechanisms are reviewed and compared. The performance of current self-driven photodetectors is critically assessed and future directions are discussed towards the target application fields.
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Affiliation(s)
- Qi Wang
- South China University of Technology, Guangzhou, China.
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35
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Bhalla P, MacDonald AH, Culcer D. Resonant Photovoltaic Effect in Doped Magnetic Semiconductors. PHYSICAL REVIEW LETTERS 2020; 124:087402. [PMID: 32167346 DOI: 10.1103/physrevlett.124.087402] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2019] [Accepted: 02/05/2020] [Indexed: 06/10/2023]
Abstract
The rectified nonlinear response of a clean, time-reversal symmetric, undoped semiconductor to an ac electric field includes a well known intrinsic shift current. We show that when Kramers degeneracy is broken, a distinct second order rectified response appears due to Bloch state anomalous velocities in a system with an oscillating Fermi surface. This effect, which we refer to as the resonant photovoltaic effect, produces a resonant galvanic current peak at the interband absorption threshold in doped semiconductors or semimetals with approximate particle-hole symmetry. We evaluate the resonant photovoltaic effect for a model of the surface states of a magnetized topological insulator.
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Affiliation(s)
- Pankaj Bhalla
- Beijing Computational Science Research Center, Beijing 100193, China
- School of Physics, University of New South Wales, Sydney 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales Node, Sydney 2052, Australia
| | - Allan H MacDonald
- Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA
| | - Dimitrie Culcer
- School of Physics, University of New South Wales, Sydney 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, University of New South Wales Node, Sydney 2052, Australia
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36
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Kim J, Kim KW, Kim B, Kang CJ, Shin D, Lee SH, Min BC, Park N. Exploitable Magnetic Anisotropy of the Two-Dimensional Magnet CrI 3. NANO LETTERS 2020; 20:929-935. [PMID: 31885277 DOI: 10.1021/acs.nanolett.9b03815] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Magnetic anisotropy often plays a central role in various static and dynamic properties of magnetic materials. In particular, for two-dimensional (2D) van der Waals materials, as inferred from the Mermin-Wagner theorem, it is an essential prerequisite for stabilizing ferromagnetic order. In this work, we carry out first-principles calculations for a CrI3 monolayer and investigate how its magnetic anisotropy is interrelated to adjustable parameters governing the underlying electronic structure. We explore various routes for controlled manipulation of magnetic anisotropy: chemical adsorption, substitutional doping, optical excitation, and charge transfer through a heterostructure. In particular, the vertical stacking of CrI3 and graphene is noteworthy in regard to controlling magnetic anisotropy: the spin anisotropy axis is switchable between the out-of-plane and in-plane directions, which is accompanied by a variation in the anisotropy energy of up to 500%. Our results show the possibility that dynamic control of the anisotropy of the 2D magnet CrI3 may enable the development of an advanced spintronic device with enhanced energy efficiency and high operation speed.
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Affiliation(s)
- Jeongwoo Kim
- Department of Physics , Incheon National University , Incheon 22012 , Korea
| | - Kyoung-Whan Kim
- Center for Spintronics , Korea Institute of Science and Technology , Seoul 02792 , Korea
| | - Bumseop Kim
- Department of Physics , Ulsan National Institute of Science and Technology , UNIST-gil 50 , Ulsan 44919 , Korea
| | - Chang-Jong Kang
- Department of Physics and Astronomy , Rutgers University , Piscataway , New Jersey 08854 , United States
| | - Dongbin Shin
- Department of Physics , Ulsan National Institute of Science and Technology , UNIST-gil 50 , Ulsan 44919 , Korea
| | - Sang-Hoon Lee
- Korea Institute for Advanced Study , Seoul 02455 , Korea
| | - Byoung-Chul Min
- Center for Spintronics , Korea Institute of Science and Technology , Seoul 02792 , Korea
| | - Noejung Park
- Department of Physics , Ulsan National Institute of Science and Technology , UNIST-gil 50 , Ulsan 44919 , Korea
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