Broadband transparent optical phase change materials for high-performance nonvolatile photonics

Switchable and conspicuous retroreflective sensors inspired by the wing scale of an emerald swallowtail

Butterfly wings possess distinct micro/nanostructures that contribute to their vibrant coloration, light-trapping capabilities, and sensitivity to various stimuli. These complex features have inspired the creation of diverse devices and systems, such as sensors, photovoltaics, photocatalysis, and robotics. Specifically, the wing scales of the Emerald Swallowtail (Papilio palinurus) display iridescent, polarization-sensitive, and retroreflective colors due to their hierarchical structures. However, current technologies fail to mimic these natural designs fully, limiting their practical application in everyday life. In this study, we introduce a groundbreaking method for fabricating artificial wing scales that emulate the biological structure's functionality with a much simpler geometry. By integrating self-graded lossy media into metallic micro-concavity arrays, we achieve pronounced iridescent effects in both coaxial and non-coaxial arrangements, while preserving retroreflective properties. In particular, the simplified design allows for switchable color patterns based on the viewing angle. Demonstrating the concept, we successfully employ these conspicuous retroreflectors in hydrogen gas detection and the bi-directional/switchable recognition of patterned signals.

Solution-derived Ge-Sb-Se-Te phase-change chalcogenide films

Ge-Sb-Se-Te chalcogenides, namely Se-substituted Ge-Sb-Te, have been developed as an alternative optical phase change material (PCM) with a high figure-of-merit. A need for the integration of such new PCMs onto a variety of photonic platforms has necessitated the development of fabrication processes compatible with diverse material compositions as well as substrates of varying material types, shapes, and sizes. This study explores the application of chemical solution deposition as a method capable of creating conformally coated layers and delves into the resulting modifications in the structural and optical properties of Ge-Sb-Se-Te PCMs. Specifically, we detail the solution-based deposition of Ge-Sb-Se-Te layers and present a comparative analysis with those deposited via thermal evaporation. We also discuss our ongoing endeavor to improve available choice of processing-material combinations and how to realize solution-derived high figure-of-merit optical PCM layers, which will enable a new era for the development of reconfigurable photonic devices.

Michelson Interferometric Methods for Full Optical Complex Convolution

Optical real-time data processing is advancing fields like tensor algebra acceleration, cryptography, and digital holography. This technology offers advantages such as reduced complexity through optical fast Fourier transform and passive dot-product multiplication. In this study, the proposed Reconfigurable Complex Convolution Module (RCCM) is capable of independently modulating both phase and amplitude over two million pixels. This research is relevant for applications in optical computing, hardware acceleration, encryption, and machine learning, where precise signal modulation is crucial. We demonstrate simultaneous amplitude and phase modulation of an optical two-dimensional signal in a thin lens's Fourier plane. Utilizing two spatial light modulators (SLMs) in a Michelson interferometer placed in the focal plane of two Fourier lenses, our system enables full modulation in a 4F system's Fourier domain. This setup addresses challenges like SLMs' non-linear inter-pixel crosstalk and variable modulation efficiency. The integration of these technologies in the RCCM contributes to the advancement of optical computing and related fields.

Reversible Laser Imprinting of Phase Change Photonic Structures in Integrated Waveguides

Formation of laser-induced periodic surface structures (LIPSS) is known as a fast and robust method of functionalization of material surfaces. Of particular interest are LIPSS that manifest as periodic modulation of phase state of the material, as it implies reversibility of phase modification that constitute rewritable LIPSS, and recently was demonstrated for chalcogenide phase change materials (PCMs). Due to remarkable properties of chalcogenide PCMs─nonvolatality, prominent optical contrast and ns switching speed─such novel phase change LIPSS hold potential for exciting applications in all-optical tunable photonics. In this work we explore phase change LIPSS formation in thin films of Ge2Sb2Te5 (GST) integrated with planar and rib waveguides. We demonstrate that by fine-tuning laser radiation, the morphology of phase change LIPSS can be controlled, including their period and fill factor, and investigate the limitations of multicycle rewriting of the structures. We also demonstrate the formation of phase change LIPSS on a 1D waveguide, which has potential for use as tunable Bragg filters or structures for on-demand light decoupling into the far-field. The presented concept of applying phase change LIPSS offers a promising approach to enable fast and simple tuning in integrated photonic devices.

Phase-Controlled Synthesis and Phase-Change Properties of Colloidal Cu-Ge-Te Nanoparticles

Phase-change memory (PCM) technology has recently attracted a vivid interest for neuromorphic applications, in-memory computing, and photonic integration due to the tunable refractive index and electrical conductivity between the amorphous and crystalline material states. Despite this, it is increasingly challenging to scale down the device dimensions of conventionally sputtered PCM memory arrays, restricting the implementation of PCM technology in mass applications such as consumer electronics. Here, we report the synthesis and structural study of sub-10 nm Cu-Ge-Te (CGT) nanoparticles as suitable candidates for low-cost and ultrasmall PCM devices. We show that our synthesis approach can accurately control the structure of the CGT colloids, such as composition-tuned CGT amorphous nanoparticles as well as crystalline CGT nanoparticles with trigonal α-GeTe and tetragonal Cu2GeTe3 phases. In situ characterization techniques such as high-temperature X-ray diffraction and X-ray absorption spectroscopy reveal that Cu doping in GeTe improves the thermal properties and amorphous phase stability of the nanoparticles, in addition to nanoscale effects, which enhance the nonvolatility characteristics of CGT nanoparticles even further. Moreover, we demonstrate the thin-film fabrication of CGT nanoparticles and characterize their optical properties with spectroscopic ellipsometry measurements. We reveal that CGT nanoparticle thin films exhibit a negative reflectivity change and have good reflectivity contrast in the near-IR spectrum. Our work promotes the possibility to use PCM in nanoparticle form for applications such as electro-optical switching devices, metalenses, reflectivity displays, and phase-change IR devices.

Multitask Learning Deep Neural Networks Enable Embedded Design of Active Metamaterials

In this study, we propose and implement a deep neural network framework based on multitask learning aimed at simplifying the forward modeling and inverse design process of photonic devices integrating active metasurfaces. We demonstrate and validate our approach by constructing a continuously tunable bandpass filter that is effective in the midwave infrared region. The key to this filter is the combination of a metasurface and Fabry-Perot (F-P) cavity structure of the tunable phase-change material Ge2Sb2Se4Te (GSST) and the precise control of the crystallinity of the GSST by a silicon-based heater. With the help of a deep learning framework, we are able to independently model the crystallinity and geometric parameters of the filter to maximize the use of GSST tuning for bandpass filtering. Our model discusses the self-attention mechanism and the effect of noise and compares several existing popular algorithms, and the results show that a multitask deep learning strategy can better assist the on-demand reverse design of photonic structures with phase change materials. This opens up new possibilities for personalization and functional extension of optical devices.

Infrared phase-change chiral metasurfaces with tunable circular dichroism

Integrating phase-change materials in metasurfaces has emerged as a powerful strategy to realize optical devices with tunable electromagnetic responses. Here, phase-change chiral metasurfaces based on GST-225 material with the designed trapezoid-shaped resonators are demonstrated to achieve tunable circular dichroism (CD) responses in the infrared regime. The asymmetric trapezoid-shaped resonators are designed to support two chiral plasmonic resonances with opposite CD responses for realizing switchable CD between negative and positive values using the GST phase change from amorphous to crystalline. The electromagnetic field distributions of the chiral plasmonic resonant modes are analyzed to understand the chiroptical responses of the metasurface. Furthermore, the variations in the absorption spectrum and CD value for the metasurface as a function of the baking time during the GST phase transition are analyzed to reveal the underlying thermal tuning process of the metasurface. The demonstrated phase-change metasurfaces with tunable CD responses hold significant promise in enabling many applications in the infrared regime such as chiral sensing, encrypted communication, and thermal imaging.

Active manipulation for Goos-Hänchen shift of guided-wave via a metasurface of silicon-nanoscale semi-spheres on SOI waveguide

Goos-Hänchen shift of total internal reflection (TIR) is the light beam movement without external driving, so envisioned to have potential manipulation of optical beams. In this article, with a silicon-on-insulator (SOI) waveguide corner structure, a variable equivalent permittivity of guided wave is modelled, and then the equivalent electric polarizabilities and the Goos-Hänchen shift of guided wave are modelled. Consequently, with a 2.0-µm SOI waveguide corner structure and an abrupt phase change of ∼0.5π caused by a vertically inserted metasurface of nanoscale semi-spheres having a 450-nm radius can reach the GH shifts of 2.1 µm for TE- and TM-mode, respectively, which are verified by both the FDTD simulation results of 1.93 µm with a reflectivity of about 62% and the experimental results of 2.0 µm with ∼60%. Therefore, this work has efficiently modelled the optical feature response of semi-sphere metasurface to guided wave and the active manipulation for the GH shifts of guided-wave, opening more opportunities to develop the new functionalities and devices for Si-based photonic integrated circuit (PIC) applications.

Multiphysics simulations of a cylindrical waveguide optical switch using phase change materials on silicon

This work presents the design and multiphysics simulation of a cylindrical waveguide-based optical switch using germanium-antimony-tellurium (GST) as an active phase change material. The innovative cylindrical architecture is theoretically analyzed and evaluated at 1550 nm wavelength for telecommunication applications. The dispersion relation is derived analytically for the first time to model the optical switch, while finite element method (FEM) and finite difference time domain (FDTD) techniques are utilized to simulate the optical modes, light propagation, and phase change dynamics. The fundamental TE01 and HE11 modes are studied in detail, enabling switching between low-loss amorphous and high-loss crystalline GST phases. Increasing the GST thickness is found to increase absorption loss in the crystalline state but also slows down phase transition kinetics, reducing switching speeds. A 10 nm GST layer results in competitive performance metrics of 0.79 dB insertion loss, 13.47 dB extinction ratio, 30 nJ average power consumption, and 3.5 Mb/s bit rate. The combined optical, thermal, and electrical simulation provides comprehensive insights towards developing integrated non-volatile photonic switches and modulators utilizing phase change materials.

Electrically Reconfigurable Phase-Change Transmissive Metasurface

Programmable and reconfigurable optics hold significant potential for transforming a broad spectrum of applications, spanning space explorations to biomedical imaging, gas sensing, and optical cloaking. The ability to adjust the optical properties of components like filters, lenses, and beam steering devices could result in dramatic reductions in size, weight, and power consumption in future optoelectronic devices. Among the potential candidates for reconfigurable optics, chalcogenide-based phase change materials (PCMs) offer great promise due to their non-volatile and analogue switching characteristics. Although PCM have found widespread use in electronic data storage, these memory devices are deeply sub-micron-sized. To incorporate phase change materials into free-space optical components, it is essential to scale them up to beyond several hundreds of microns while maintaining reliable switching characteristics. This study demonstrated a non-mechanical, non-volatile transmissive filter based on low-loss PCMs with a 200 × 200 µm2 switching area. The device/metafilter can be consistently switched between low- and high-transmission states using electrical pulses with a switching contrast ratio of 5.5 dB. The device was reversibly switched for 1250 cycles before accelerated degradation took place. The work represents an important step toward realizing free-space reconfigurable optics based on PCMs.

Reconfigurable Micro/Nano-Optical Devices Based on Phase Transitions: From Materials, Mechanisms to Applications

In recent years, numerous efforts have been devoted to exploring innovative micro/nano-optical devices (MNODs) with reconfigurable functionality, which is highly significant because of the progressively increasing requirements for next-generation photonic systems. Fortunately, phase change materials (PCMs) provide an extremely competitive pathway to achieve this goal. The phase transitions induce significant changes to materials in optical, electrical properties or shapes, triggering great research interests in applying PCMs to reconfigurable micro/nano-optical devices (RMNODs). More specifically, the PCMs-based RMNODs can interact with incident light in on-demand or adaptive manners and thus realize unique functions. In this review, RMNODs based on phase transitions are systematically summarized and comprehensively overviewed from materials, phase change mechanisms to applications. The reconfigurable optical devices consisting of three kinds of typical PCMs are emphatically introduced, including chalcogenides, transition metal oxides, and shape memory alloys, highlighting the reversible state switch and dramatic contrast of optical responses along with designated utilities generated by phase transition. Finally, a comprehensive summary of the whole content is given, discussing the challenge and outlooking the potential development of the PCMs-based RMNODs in the future.

On-chip photonic convolution by phase-change in-memory computing cells with quasi-continuous tuning

Matrix multiplication acceleration by on-chip photonic integrated circuits (PICs) is emerging as one of the attractive and promising solutions, offering outstanding benefits in speed and bandwidth as compared to non-photonic approaches. Incorporating nonvolatile phase-change materials into PICs or devices enables optical storage and computing, surpassing their electrical counterparts. In this paper, we propose a design of on-chip photonic convolution for optical in-memory computing by integrating the phase change chalcogenide of Ge2Sb2Se4Te1 (GSST) into an asymmetric directional coupler for constructions of an in-memory computing cell, marrying the advantages of both the large bandwidth of Mach-Zehnder interferometers (MZIs) and the small size of micro-ring resonators (MRRs). Through quasi-continuous electro-thermal tuning of the GSST-integrated in-memory computing cells, numerical calculations about the optical and electro-thermal behaviors during GSST phase transition confirm the tunability of the programmable elements stored in the in-memory computing cells within [-1, 1]. For proof-of-concept verification, we apply the proposed optical convolutional kernel to a typical image edge detection application. As evidenced by the evaluation results, the prototype achieves the same accuracy as the convolution kernel implemented on a common digital computer, demonstrating the feasibility of the proposed scheme for on-chip photonic convolution and optical in-memory computing.

Phase-change behavior of RuSbTe thin film for photonic applications with amplitude-only modulation

Ge2Sb2Te5 (GST), the most mature phase-change materials (PCM), functions as a recoding layer in nonvolatile memory and optical discs by contrasting the physical properties upon phase transition between amorphous and crystalline phases. However, GST faces challenges such as a large extinction coefficient (k) and low thermal stability of the amorphous phase. In this study, we introduce RuSbTe as a new PCM to address the GST concerns. Notably, the crystallization temperature of the amorphous RuSbTe is approximately 350 °C, significantly higher than GST. A one-order-of-magnitude increase in the resistivity contrast was observed upon phase transition. The crystalline (0.35-0.50 eV) and amorphous (0.26-0.37 eV) phases exhibit relatively small band gap values, resulting in substantial k. Although RuSbTe demonstrates a k difference of approximately 1 upon crystallization at the telecommunications C-band, the refractive index (n) difference is negligible. Unlike GST, which induces both phase retardation and amplitude modulation in its optical switch device, RuSbTe exhibits amplitude-only modulation. This study suggests that RuSbTe has the potential to enable new photonic computing devices that can independently control the phase and amplitude. Combining RuSbTe with phase-only modulators could open avenues for advanced applications.

Active strong coupling of exciton and nanocavity based on GSST-WSe2 hybrid nanostructures

The strong coupling between optical resonance microcavity and matter excitations provides a practical path for controlling light-matter interactions. However, conventional microcavity, whose functions are fixed at the fabrication stage, dramatically limits the modulation of light-matter interactions. Here, we investigate the active strong coupling of resonance mode and exciton in GSST-WSe2 hybrid nanostructures. It is demonstrated that significant spectral splitting is observed in single nanostructures, tetramers, and metasurfaces. We further confirm the strong coupling by calculating the enhanced fluorescence spectra. The coupling effect between the excited resonance and exciton is dramatically modulated during the change of GSST from amorphous to crystalline, thus realizing the strong coupling switching. This switching property has been fully demonstrated in several systems mentioned earlier. Our work is significant in guiding the study of actively tunable strong light-matter interactions at the nanoscale.

Sub-1-Volt Electrically Programmable Optical Modulator Based on Active Tamm Plasmon

Reconfigurable optical devices hold great promise for advancing high-density optical interconnects, photonic switching, and memory applications. While many optical modulators based on active materials have been demonstrated, it is challenging to achieve a high modulation depth with a low operation voltage in the near-infrared (NIR) range, which is a highly sought-after wavelength window for free-space communication and imaging applications. Here, electrically switchable Tamm plasmon coupled with poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) is introduced. The device allows for a high modulation depth across the entire NIR range by fully absorbing incident light even under epsilon near zero conditions. Optical modulation exceeding 88% is achieved using a CMOS-compatible voltage of ±1 V. This modulation is facilitated by precise electrical control of the charge carrier density through an electrochemical doping/dedoping process. Additionally, the potential applications of the device are extended for a non-volatile multi-memory state optical device, capable of rewritable optical memory storage and exhibiting long-term potentiation/depression properties with neuromorphic behavior.

Monolithic back-end-of-line integration of phase change materials into foundry-manufactured silicon photonics

Monolithic integration of novel materials without modifying the existing photonic component library is crucial to advancing heterogeneous silicon photonic integrated circuits. Here we show the introduction of a silicon nitride etch stop layer at select areas, coupled with low-loss oxide trench, enabling incorporation of functional materials without compromising foundry-verified device reliability. As an illustration, two distinct chalcogenide phase change materials (PCMs) with remarkable nonvolatile modulation capabilities, namely Sb2Se3 and Ge2Sb2Se4Te1, were monolithic back-end-of-line integrated, offering compact phase and intensity tuning units with zero-static power consumption. By employing these building blocks, the phase error of a push-pull Mach-Zehnder interferometer optical switch could be reduced with a 48% peak power consumption reduction. Mirco-ring filters with >5-bit wavelength selective intensity modulation and waveguide-based >7-bit intensity-modulation broadband attenuators could also be achieved. This foundry-compatible platform could open up the possibility of integrating other excellent optoelectronic materials into future silicon photonic process design kits.

Optimized wideband and compact multifunctional photonic device based on Sb2S3 phase change material

In this paper, a 1 × 2 photonic switch is designed based on a silicon-on-insulator (SOI) platform combined with the phase change material (PCM), Sb2S3, assisted by the direct binary search (DBS) algorithm. The designed photonic switch exhibits an impressive operating bandwidth ranging from 1450 to 1650 nm. The device has an insertion loss (IL) from 0.44 dB to 0.70 dB (of less than 0.7 dB) and cross talk (CT) from -26 dB to -20 dB (of less than -20 dB) over an operating bandwidth of 200 nm, especially an IL of 0.52 dB and CT of -24 dB at 1550 nm. Notably, the device is highly compact, with footprints of merely 3 × 4 µm2. Furthermore, we have extended the device's functionality for multifunctional operation in the C-band that can serve as both a 1 × 2 photonic switch and a 3 dB photonic power splitter. In the photonic switch mode, the device demonstrates an IL of 0.7 dB and a CT of -13.5 dB. In addition, when operating as a 3 dB photonic power splitter, the IL is less than 0.5 dB.

Versatile spaceborne photonics with chalcogenide phase-change materials

Recent growth in space systems has seen increasing capabilities packed into smaller and lighter Earth observation and deep space mission spacecraft. Phase-change materials (PCMs) are nonvolatile, reconfigurable, fast-switching, and have recently shown a high degree of space radiation tolerance, thereby making them an attractive materials platform for spaceborne photonics applications. They promise robust, lightweight, and energy-efficient reconfigurable optical systems whose functions can be dynamically defined on-demand and on-orbit to deliver enhanced science or mission support in harsh environments on lean power budgets. This comment aims to discuss the recent advances in rapidly growing PCM research and its potential to transition from conventional terrestrial optoelectronics materials platforms to versatile spaceborne photonic materials platforms for current and next-generation space and science missions. Materials International Space Station Experiment-14 (MISSE-14) mission-flown PCMs outside of the International Space Station (ISS) and key results and NASA examples are highlighted to provide strong evidence of the applicability of spaceborne photonics.

Non-volatile 2 × 2 optical switch using multimode interference in an Sb2Se3-loaded waveguide

We propose a non-volatile 2 × 2 photonic switch based on multimode interference in an Sb2Se3-loaded waveguide. The different modal symmetries of the TE0 and TE1 modes supported in the multimode region change their propagation constants distinctly upon the Sb2Se3 phase transition. Through careful optical design and FDTD optimization of the multimode waveguide dimensions, efficient switching is achieved despite the modest index contrast of Sb2Se3 relative to Ge2Sb2Te5. The fabricated optical switch demonstrates favorable characteristics, including low insertion loss of ∼1 dB, a compact length of ∼27 µm, and small cross talk below -15 dB across a 35 nm bandwidth. Such non-volatile and broadband components will be critical for future high-density programmable photonic-integrated circuits for optical communications and signal processing.

Praseodymium-Doped Ge20In5Sb10Se65 Films Based on Argon Plasma Cosputtering for Infrared-Luminescent Integrated Photonic Circuits

In this paper, we report on the infrared luminescence of amorphous praseodymium-doped Ge20In5Sb10Se65 waveguides, which can be used as infrared sources in photonic integrated circuits on silicon substrates. Amorphous chalcogenide thin films were deposited by radiofrequency magnetron cosputtering using an argon plasma whose deposition parameters were optimized for chalcogenide materials. The micropatterning as ridge waveguides of the chalcogenide cosputtered films was performed using photolithography and plasma-coupled reactive ion etching techniques. The influence of the rare earth concentration within those thin films on their optical properties and rare earth spectroscopic properties was investigated. Using an excitation wavelength of 1.55 μm, the mid-infrared luminescence of Pr3+ ions from 2.5 to 5.5 μm was clearly demonstrated for studied chalcogenide materials. A wide range of waveguide widths and doping ratios were tested, assessing the ability of the cosputtering technique to preserve the luminescence properties of the rare earth ions initially observed in the bulk glass through the thin-film deposition and patterning process.

Plasmonic switches based on VO2as the phase change material

In this paper, a comprehensive review of the recent advancements in the design and development of plasmonic switches based on vanadium dioxide (VO2) is presented. Plasmonic switches are employed in applications such as integrated photonics, plasmonic logic circuits and computing networks for light routing and switching, and are based on the switching of the plasmonic properties under the effect of an external stimulus. In the last few decades, plasmonic switches have seen a significant growth because of their ultra-fast switching speed, wide spectral tunability, ultra-compact size, and low losses. In this review, first, the mechanism of the semiconductor to metal phase transition in VO2is discussed and the reasons for employing VO2over other phase change materials for plasmonic switching are described. Subsequently, an exhaustive review and comparison of the current state-of-the-art plasmonic switches based on VO2proposed in the last decade is carried out. As the phase transition in VO2can be activated by application of temperature, voltage or optical light pulses, this review paper has been categorized into thermally-activated, electrically-activated, and optically-activated plasmonic switches based on VO2operating in the visible, near-infrared, infrared and terahertz frequency regions.

Nanocavity tuning and formation controlled by the phase change of sub-micron-square GST patterns on Si photonic crystals

It has been well established that photonic crystal nanocavities with wavelength sized mode volume enable various integrable photonic devices with extremely small consumption energy and small footprint. In this study, we explore the possibility of non-volatile functionalities employing photonic crystal nanocavities and phase change material, Ge2Sb2Te5 (GST). Recently, non-volatile photonic devices based on GST have attracted significant interest and are expected to enable energy-efficient photonic processing, especially for optical computing. However, the device size and the area of GST in previous studies have been rather large. Here, we propose and fabricate Si photonic crystal nanocavities on which submicron-square GST patterns are selectively loaded. Because of the strong light confinement, extremely small area of GST is sufficient to manipulate the cavity mode. We have succeeded to fabricate 30-nm-thick and several-100nm-square GST blocks patterned at the center of photonic crystal cavity with a high alignment accuracy. We confirmed that the resonant wavelength and Q-factor of cavity modes are controlled by the phase change of GST. Moreover, cavity formation controlled by submicron-sized GST is also demonstrated by GST-loaded photonic-crystal line-defect waveguides. Our approach in which we place sub-micron-sized GST inside a photonic crystal nanocavity is promising for realizing extremely energy-efficient non-volatile integrable photonic devices, such as switches, modulators, memories, and reconfigurable novel devices.

Roadmap for phase change materials in photonics and beyond

Phase Change Materials (PCMs) have demonstrated tremendous potential as a platform for achieving diverse functionalities in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum, ranging from terahertz to visible frequencies. This comprehensive roadmap reviews the material and device aspects of PCMs, and their diverse applications in active and reconfigurable micro-nanophotonic devices across the electromagnetic spectrum. It discusses various device configurations and optimization techniques, including deep learning-based metasurface design. The integration of PCMs with Photonic Integrated Circuits and advanced electric-driven PCMs are explored. PCMs hold great promise for multifunctional device development, including applications in non-volatile memory, optical data storage, photonics, energy harvesting, biomedical technology, neuromorphic computing, thermal management, and flexible electronics.

Time-Resolved Temperature Mapping Leveraging the Strong Thermo-Optic Effect in Phase-Change Materials

Optical phase-change materials are highly promising for emerging applications such as tunable metasurfaces, reconfigurable photonic circuits, and non-von Neumann computing. However, these materials typically require both high melting temperatures and fast quenching rates to reversibly switch between their crystalline and amorphous phases: a significant challenge for large-scale integration. In this work, we use temperature-dependent ellipsometry to study the thermo-optic effect in GST and use these results to demonstrate an experimental technique that leverages the thermo-optic effect in GST to enable both spatial and temporal thermal measurements of two common electro-thermal microheater designs currently used by the phase-change community. Our approach shows excellent agreement between experimental results and numerical simulations and provides a noninvasive method for rapid characterization of electrically programmable phase-change devices.

Broadband Achromatic Metalens for Tunable Focused Vortex Beam Generation in the Near-Infrared Range

Vortex beams accompanied with orbital angular momentum have attracted significant attention in research fields due to their formidable capabilities in various crucial applications. However, conventional devices for generating vortex beams still suffer from bulky sizes, high cost, and confined performances. Metalens, as an advanced platform to arbitrarily control the optical waves, has promising prospects to address the predicament for conventional devices. Although great progress has been demonstrated in the applications of vortex beams, they are still confronted with fixed functionality after fabrication that severely hinders their application range. In this work, the phase-change material of Ge2Sb2Te5 (GST) is employed to design the meta-atoms to realize tunable optical responses. Moreover, the focused vortex beam can be accomplished by superimposing a helical phase and hyperbolic phase, and the chromatic aberrations in near-infrared (NIR) range can be corrected by introducing an additional phase compensation. And the design strategy is validated by two different metalenses (BAMTF-1 and BAMTF-2). The numerical results indicate that the chromatic aberrations for two metalens can be corrected in 1.33-1.60 μm covering the telecom range. Moreover, the average focusing efficiency of BAMTF-1 is 51.4%, and that of BAMTF-2 is 39.9%, indicating the favorable performances of designed BAMTF. More importantly, their average focal lengths have a relative tuning range of 38.82% and 33.17% by altering the crystallization ratio of GST, respectively. This work may provide a significant scheme for on-chip and tunable devices for NIR imaging and communication systems.

Review: tunable nanophotonic metastructures

Tunable nanophotonic metastructures offer new capabilities in computing, networking, and imaging by providing reconfigurability in computer interconnect topologies, new optical information processing capabilities, optical network switching, and image processing. Depending on the materials and the nanostructures employed in the nanophotonic metastructure devices, various tuning mechanisms can be employed. They include thermo-optical, electro-optical (e.g. Pockels and Kerr effects), magneto-optical, ionic-optical, piezo-optical, mechano-optical (deformation in MEMS or NEMS), and phase-change mechanisms. Such mechanisms can alter the real and/or imaginary parts of the optical susceptibility tensors, leading to tuning of the optical characteristics. In particular, tunable nanophotonic metastructures with relatively large tuning strengths (e.g. large changes in the refractive index) can lead to particularly useful device applications. This paper reviews various tunable nanophotonic metastructures' tuning mechanisms, tuning characteristics, tuning speeds, and non-volatility. Among the reviewed tunable nanophotonic metastructures, some of the phase-change-mechanisms offer relatively large index change magnitude while offering non-volatility. In particular, Ge-Sb-Se-Te (GSST) and vanadium dioxide (VO2) materials are popular for this reason. Mechanically tunable nanophotonic metastructures offer relatively small changes in the optical losses while offering large index changes. Electro-optically tunable nanophotonic metastructures offer relatively fast tuning speeds while achieving relatively small index changes. Thermo-optically tunable nanophotonic metastructures offer nearly zero changes in optical losses while realizing modest changes in optical index at the expense of relatively large power consumption. Magneto-optically tunable nanophotonic metastructures offer non-reciprocal optical index changes that can be induced by changing the magnetic field strengths or directions. Tunable nanophotonic metastructures can find a very wide range of applications including imaging, computing, communications, and sensing. Practical commercial deployments of these technologies will require scalable, repeatable, and high-yield manufacturing. Most of these technology demonstrations required specialized nanofabrication tools such as e-beam lithography on relatively small fractional areas of semiconductor wafers, however, with advanced CMOS fabrication and heterogeneous integration techniques deployed for photonics, scalable and practical wafer-scale fabrication of tunable nanophotonic metastructures should be on the horizon, driven by strong interests from multiple application areas.

Recent developments in Chalcogenide phase change material-based nanophotonics

There is now a deep interest in actively reconfigurable nanophotonics as they will enable the next generation of optical devices. Of the various alternatives being explored for reconfigurable nanophotonics, Chalcogenide phase change materials (PCMs) are considered highly promising owing to the nonvolatile nature of their phase change. Chalcogenide PCM nanophotonics can be broadly classified into integrated photonics (with guided wave light propagation) and Meta-optics (with free space light propagation). Despite some early comprehensive reviews, the pace of development in the last few years has shown the need for a topical review. Our comprehensive review covers recent progress on nanophotonic architectures, tuning mechanisms, and functionalities in tunable PCM Chalcogenides. In terms of integrated photonics, we identify novel PCM nanoantenna geometries, novel material utilization, the use of nanostructured waveguides, and sophisticated excitation pulsing schemes. On the meta-optics front, the breadth of functionalities has expanded, enabled by exploring design aspects for better performance. The review identifies immediate, and intermediate-term challenges and opportunities in (1) the development of novel chalcogenide PCM, (2) advance in tuning mechanism, and (3) formal inverse design methods, including machine learning augmented inverse design, and provides perspectives on these aspects. The topical review will interest researchers in further advancing this rapidly growing subfield of nanophotonics.

Neuromorphic Photonic Memory Devices Using Ultrafast, Non-Volatile Phase-Change Materials

The search for ultrafast photonic memory devices is inspired by the ever-increasing number of cloud-computing, supercomputing, and artificial-intelligence applications, together with the unique advantages of signal processing in the optical domain such as high speed, large bandwidth, and low energy consumption. By embracing silicon photonics with chalcogenide phase-change materials (PCMs), non-volatile integrated photonic memory is developed with promising potential in photonic integrated circuits and nanophotonic applications. While conventional PCMs suffer from slow crystallization speed, scandium-doped antimony telluride (SST) has been recently developed for ultrafast phase-change random-access memory applications. An ultrafast non-volatile photonic memory based on an SST thin film with a 2 ns write/erase speed is demonstrated, which is the fastest write/erase speed ever reported in integrated phase-change photonic devices. SST-based photonic memories exhibit multilevel capabilities and good stability at room temperature. By mapping the memory level to the biological synapse weight, an artificial neural network based on photonic memory devices is successfully established for image classification. Additionally, a reflective nanodisplay application using SST with optoelectronic modulation capabilities is demonstrated. Both the optical and electrical changes in SST during the phase transition and the fast-switching speed demonstrate their potential for use in photonic computing, neuromorphic computing, nanophotonics, and optoelectronic applications.

Continuously Tunable Optical Modulation Using Vanadium Dioxide Huygens Metasurfaces

Efficient and dynamic light manipulation at small scale is highly desirable for many photonics applications. Active optical metasurfaces represent a useful way of achieving this due to their creative design potential, compact footprint, and low power consumption, paving the way toward the realization of chip-scale photonic devices with tunable optical functionality on demand. Here, we demonstrate a dynamically tunable, dual-function metasurface based on dielectric resonances in vanadium dioxide that is capable of independent active amplitude and phase control without the use of mechanical parts. Significant developments in the nanofabrication of vanadium dioxide have been shown to enable this metasurface. Gradual thermal control of the metasurface yields a computationally predicted continuously tuned amplitude modulation of 19 dB with negligible phase modulation and a continuously tuned phase modulation of 228° with negligible amplitude modulation, both at near-infrared wavelengths. Experimentally, a maximum continuously tuned amplitude modulation of 9.6 dB and phase modulation of 120° are shown, along with demonstration of stable intermediate states and repeated modulation without degradation. Reprogrammable optical functionality can thus be achieved in precisely engineered nanoantenna arrays for adaptive modulation of amplitude and phase of light for applications such as tunable holograms, lenses, and beam deflectors.

Toward Accurate Thermal Modeling of Phase Change Material-Based Photonic Devices

Reconfigurable or programmable photonic devices are rapidly growing and have become an integral part of many optical systems. The ability to selectively modulate electromagnetic waves through electrical stimuli is crucial in the advancement of a variety of applications from data communication and computing devices to environmental science and space explorations. Chalcogenide-based phase-change materials (PCMs) are one of the most promising material candidates for reconfigurable photonics due to their large optical contrast between their different solid-state structural phases. Although significant efforts have been devoted to accurate simulation of PCM-based devices, in this paper, three important aspects which have often evaded prior models yet having significant impacts on the thermal and phase transition behavior of these devices are highlighted: the enthalpy of fusion, the heat capacity change upon glass transition, as well as the thermal conductivity of liquid-phase PCMs. The important topic of switching energy scaling in PCM devices, which also helps explain why the three above-mentioned effects have long been overlooked in electronic PCM memories but only become important in photonics, is further investigated. These findings offer insight to facilitate accurate modeling of PCM-based photonic devices and can inform the development of more efficient reconfigurable optics.

Integrated Bragg grating filters based on silicon-Sb2Se3 with non-volatile bandgap engineering capability

Integrated optical filters show outstanding capability in integrated reconfigurable photonic applications, including wavelength division multiplexing (WDM), programmable photonic processors, and on-chip quantum photonic networks. Present schemes for reconfigurable filters either have a large footprint or suffer from high static power consumption, hindering the development of reconfigurable photonic integrated systems. Here, a reconfigurable hybrid Bragg grating filter is elaborately designed through a precise, modified coupling mode theory. It is also experimentally presented by integrating non-volatile phase change material (PCM) Sb2Se3 on silicon to realize compact, low-loss, and broadband engineering operations. The fabricated filter holds a compact footprint of 0.5 µm × 43.5 µm and maintains a low insertion loss of < 0.5 dB after multiple levels of engineering to achieve crystallization. The filter is able to switch from a low-loss transmission state to the Bragg reflection state, making it a favorable solution for large-scale reconfigurable photonic circuits. With a switching extinction ratio over 30 dB at 1504.85 nm, this hybrid filter breaks the tradeoff between insertion loss and tuning range. These results reveal its potential as a new candidate for a basic element in large-scale non-volatile reconfigurable systems.

Programmable Wavefront Control in the Visible Spectrum Using Low-Loss Chalcogenide Phase-Change Metasurfaces

All-dielectric metasurfaces provide unique solutions for advanced wavefront manipulation of light with complete control of amplitude and phase at sub-wavelength scales. One limitation, however, for most of these devices is the lack of any post-fabrication tunability of their response. To break this limit, a promising approach is employing phase-change materials (PCMs), which provide fast, low energy, and non-volatile means to endow metasurfaces with a switching mechanism. In this regard, great advancements have been done in the mid-infrared and near-infrared spectrum using different chalcogenides. In the visible spectral range, however, very few devices have demonstrated full phase manipulation, high efficiencies, and reversible optical modulation. In this work, a programmable all-dielectric Huygens' metasurface made of antimony sulfide (Sb2 S3 ) PCM is experimentally demonstrated, a low loss and high-index material in the visible spectral range with a large contrast (≈0.5) between its amorphous and crystalline states. ≈2π phase modulation is shown with high associated transmittance and it is used to create programmable beam-steering devices. These novel chalcogenide PCM metasurfaces have the potential to emerge as a platform for next-generation spatial light modulators and to impact application areas such as programmable and adaptive flat optics, light detection and ranging (LiDAR), and many more.

Electrical programmable multilevel nonvolatile photonic random-access memory

Photonic Random-Access Memories (P-RAM) are an essential component for the on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion losses in data links. Emerging Phase-Change Materials (PCMs) have been showed multilevel memory capability, but demonstrations still yield relatively high optical loss and require cumbersome WRITE-ERASE approaches increasing power consumption and system package challenges. Here we demonstrate a multistate electrically programmed low-loss nonvolatile photonic memory based on a broadband transparent phase-change material (Ge2Sb2Se5, GSSe) with ultralow absorption in the amorphous state. A zero-static-power and electrically programmed multi-bit P-RAM is demonstrated on a silicon-on-insulator platform, featuring efficient amplitude modulation up to 0.2 dB/μm and an ultralow insertion loss of total 0.12 dB for a 4-bit memory showing a 100× improved signal to loss ratio compared to other phase-change-materials based photonic memories. We further optimize the positioning of dual microheaters validating performance tradeoffs. Experimentally we demonstrate a half-a-million cyclability test showcasing the robust approach of this material and device. Low-loss photonic retention-of-state adds a key feature for photonic functional and programmable circuits impacting many applications including neural networks, LiDAR, and sensors for example.

Enhancing Electron Conductivity and Electron Density of Single Atom Based Core-Shell Nanoboxes for High Redox Activity in Lithium Sulfur Batteries

Herein, an integrated structure of single Fe atom doped core-shell carbon nanoboxes wrapped by self-growing carbon nanotubes (CNTs) is designed. Within the nanoboxes, the single Fe atom doped hollow cores are bonded to the shells via the carbon needles, which act as the highways for the electron transport between cores and shells. Moreover, the single Fe atom doped nanobox shells is further wrapped and connected by self-growing carbon nanotubes. Simultaneously, the needles and carbon nanotubes act as the highways for electron transport, which can improve the overall electron conductivity and electron density within the nanoboxes. Finite element analysis verifies the unique structure including both internal and external connections realize the integration of active sites in nano scale, and results in significant increase in electron transfer and the catalytic performance of Fe-N4 sites in both Li2 Sn lithiation and Li2 S delithiation. The Li-S batteries with the double-shelled single atom catalyst delivered the specific capacity of 702.2 mAh g-1 after 550 cycles at 1.0 C. The regional structure design and evaluation method provide a new strategy for the further development of single atom catalysts for more electrochemical processes.

Active control of resonant asymmetric transmission based on topological edge states in paired photonic crystals with a Ge2Sb2Te5 film

For many high-precision applications such as filtering, sensing, and photodetection, active control of resonant responses of metasurfaces is crucial. Herein, we demonstrate that active control of resonant asymmetric transmission can be realized based on the topological edge state (TES) of an ultra-thin G e 2 S b 2 T e 5 (GST) film in a photonic crystal grating (PCG). The PCG is composed of two pairs of one-dimensional photonic crystals (PCs) separated by a GST film. The phase change of the GST film re-distributes the field distributions of the PCG; thus active control of narrowband asymmetric transmission can be achieved due to the switch of the on-off state of the TES. According to multipole decompositions, the appearance and disappearance of the synergistically reduced dipole modes are responsible for the high-contrast asymmetric transmission of the PCG. In addition, the asymmetric transmission performances are robust to the variation of structural parameters, and good unidirectional transmission performances with a high peak transmission and high contrast ratio can be balanced, as the layer number of the two PCs is set as four. By changing the crystallization fraction of GST, the peak transmission and peak contrast ratio of asymmetric transmission can be flexibly tuned with the resonance locations kept almost the same.

Enhancing Focusing and Defocusing Capabilities with a Dynamically Reconfigurable Metalens Utilizing Sb2Se3 Phase-Change Material

Metalenses are emerging as an alternative to digital micromirror devices (DMDs), with the advantages of compactness and flexibility. The exploration of metalenses has ignited enthusiasm among optical engineers, positioning them as the forthcoming frontier in technology. In this paper, we advocate for the implementation of the phase-change material, Sb2Se3, capable of providing swift, reversible, non-volatile focusing and defocusing within the 1550 nm telecom spectrum. The lens, equipped with a robust ITO microheater, offers unparalleled functionality and constitutes a significant step toward dynamic metalenses that can be integrated with beamforming applications. After a meticulously conducted microfabrication process, we showcase a device capable of rapid tuning (0.1 MHz level) for metalens focusing and defocusing at C band communication, achieved by alternating the PCM state between the amorphous and crystalline states. The findings from the experiment show that the device has a high contrast ratio for switching of 28.7 dB.

Reversibly reconfigurable GSST metasurface for broadband beam steering and achromatic focusing in the long-wave infrared

Active optical metasurfaces promise compact, lightweight, and energy-efficient optical systems with unprecedented performance. Chalcogenide phase-change material Ge₂Sb₂Se₄Te₁ (GSST) has shown tremendous advantages in the design of mid-infrared active metasurfaces. However, most of the GSST-based active metasurfaces can only work efficiently within a narrow frequency range. Furthermore, their design flexibility and reversible switching capability are severely restricted by the melting of GSST during re-amorphization. Here, we propose broadband, reversibly tunable, GSST-based transmissive metasurfaces operating in the long-wave infrared spectrum, where the GSST micro-rods are cladded by refractory materials. To accurately evaluate the performance of the proposed metasurfaces, two figures of merits are defined: FOM_Φ for the evaluation of wavefront matching, and FOM_op for the assessment of the overall performance incorporating both wavefront modulation efficiency and switching contrast ratio. For the proof of concept, two meta-devices are numerically presented: a multifunctional deflector that offers continuous beam steering and long-wave pass filtering simultaneously, and a large-area (1 cm × 1 cm) broadband (11-14 µm) varifocal metalens with the ability of achromatic imaging (12.5-13.5 µm). In particular, the metalens features high FOM_op values over 16 dB in the achromatic band, with the average focusing efficiency approximating 70% (60%) in amorphous (crystalline) state and a spectral switching contrast ratio surpassing 25 dB. Our design scheme provides an additional degree of freedom for dynamic modulation and offers a novel approach for achieving high-efficiency mid-infrared compact optical devices.

A Review of Phase-Change Materials and Their Potential for Reconfigurable Intelligent Surfaces

Phase-change materials (PCMs) and metal-insulator transition (MIT) materials have the unique feature of changing their material phase through external excitations such as conductive heating, optical stimulation, or the application of electric or magnetic fields, which, in turn, results in changes to their electrical and optical properties. This feature can find applications in many fields, particularly in reconfigurable electrical and optical structures. Among these applications, the reconfigurable intelligent surface (RIS) has emerged as a promising platform for both wireless RF applications as well as optical ones. This paper reviews the current, state-of-the-art PCMs within the context of RIS, their material properties, their performance metrics, some applications found in the literature, and how they can impact the future of RIS.

Non-volatile electrically programmable integrated photonics with a 5-bit operation

Scalable programmable photonic integrated circuits (PICs) can potentially transform the current state of classical and quantum optical information processing. However, traditional means of programming, including thermo-optic, free carrier dispersion, and Pockels effect result in either large device footprints or high static energy consumptions, significantly limiting their scalability. While chalcogenide-based non-volatile phase-change materials (PCMs) could mitigate these problems thanks to their strong index modulation and zero static power consumption, they often suffer from large absorptive loss, low cyclability, and lack of multilevel operation. Here, we report a wide-bandgap PCM antimony sulfide (Sb₂S₃)-clad silicon photonic platform simultaneously achieving low loss (<1.0 dB), high extinction ratio (>10 dB), high cyclability (>1600 switching events), and 5-bit operation. These Sb₂S₃-based devices are programmed via on-chip silicon PIN diode heaters within sub-ms timescale, with a programming energy density of [Formula: see text]. Remarkably, Sb₂S₃ is programmed into fine intermediate states by applying multiple identical pulses, providing controllable multilevel operations. Through dynamic pulse control, we achieve 5-bit (32 levels) operations, rendering 0.50 ± 0.16 dB per step. Using this multilevel behavior, we further trim random phase error in a balanced Mach-Zehnder interferometer.

Neuromorphic Photonics Based on Phase Change Materials

Neuromorphic photonics devices based on phase change materials (PCMs) and silicon photonics technology have emerged as promising solutions for addressing the limitations of traditional spiking neural networks in terms of scalability, response delay, and energy consumption. In this review, we provide a comprehensive analysis of various PCMs used in neuromorphic devices, comparing their optical properties and discussing their applications. We explore materials such as GST (Ge₂Sb₂Te₅), GeTe-Sb₂Te₃, GSST (Ge₂Sb₂Se₄Te₁), Sb₂S₃/Sb₂Se₃, Sc_0.2Sb₂Te₃ (SST), and In₂Se₃, highlighting their advantages and challenges in terms of erasure power consumption, response rate, material lifetime, and on-chip insertion loss. By investigating the integration of different PCMs with silicon-based optoelectronics, this review aims to identify potential breakthroughs in computational performance and scalability of photonic spiking neural networks. Further research and development are essential to optimize these materials and overcome their limitations, paving the way for more efficient and high-performance photonic neuromorphic devices in artificial intelligence and high-performance computing applications.

Integrated Reconfigurable Photon-Pair Source Based on High-Q Nonlinear Chalcogenide Glass Microring Resonators

Chalcogenide glasses (ChGs) have recently emerged as enabling materials for building reconfigurable nanophotonic devices by employing their refractive index changes associated with photosensitive effects. In particular, the availability of low-loss thin-film ChGs and the realization of high-Q microresonators provide exciting opportunities for integrated photonics. So far, the ChG photonic devices are predominately operated in the classical optics regime. In this work, we present the realization on-chip bright photon-pair quantum light sources via spontaneous four-wave mixing in a high-Q microring resonator fabricated on the newly developed ChG Ge₂₅Sb₁₀S₆₅ platform. The emission wavelength of the photon-pair source can be continuously tuned across a double-free spectral range in a reconfigurable manner. Our work serves as a starting point to fully unleash the potential of exploiting ChGs for developing reconfigurable integrated quantum photonic devices.

Non-Volatile Reconfigurable Compact Photonic Logic Gates Based on Phase-Change Materials

Photonic logic gates have important applications in fast data processing and optical communication. This study aims to design a series of ultra-compact non-volatile and reprogrammable photonic logic gates based on the Sb₂Se₃ phase-change material. A direct binary search algorithm was adopted for the design, and four types of photonic logic gates (OR, NOT, AND, and XOR) are created using silicon-on-insulator technology. The proposed structures had very small sizes of 2.4 μm × 2.4 μm. Three-dimensional finite-difference time-domain simulation results show that, in the C-band near 1550 nm, the OR, NOT, AND, and XOR gates exhibit good logical contrast of 7.64, 6.1, 3.3, and 18.92 dB, respectively. This series of photonic logic gates can be applied in optoelectronic fusion chip solutions and 6G communication systems.

Colloidal Ternary Telluride Quantum Dots for Tunable Phase Change Optics in the Visible and Near-Infrared

A structural change between amorphous and crystalline phase provides a basis for reliable and modular photonic and electronic devices, such as nonvolatile memory, beam steerers, solid-state reflective displays, or mid-IR antennas. In this paper, we leverage the benefits of liquid-based synthesis to access phase-change memory tellurides in the form of colloidally stable quantum dots. We report a library of ternary M_xGe_1-xTe colloids (where M is Sn, Bi, Pb, In, Co, Ag) and then showcase the phase, composition, and size tunability for Sn-Ge-Te quantum dots. Full chemical control of Sn-Ge-Te quantum dots permits a systematic study of structural and optical properties of this phase-change nanomaterial. Specifically, we report composition-dependent crystallization temperature for Sn-Ge-Te quantum dots, which is notably higher compared to bulk thin films. This gives the synergistic benefit of tailoring dopant and material dimension to combine the superior aging properties and ultrafast crystallization kinetics of bulk Sn-Ge-Te, while improving memory data retention due to nanoscale size effects. Furthermore, we discover a large reflectivity contrast between amorphous and crystalline Sn-Ge-Te thin films, exceeding 0.7 in the near-IR spectrum region. We utilize these excellent phase-change optical properties of Sn-Ge-Te quantum dots along with liquid-based processability for nonvolatile multicolor images and electro-optical phase-change devices. Our colloidal approach for phase-change applications offers higher customizability of materials, simpler fabrication, and further miniaturization to the sub-10 nm phase-change devices.

GeSbSeTe-based high extinction ratio optical modulator

In this paper, a design for a high extinction ratio Mach-Zehnder optical modulator is proposed. The switchable refractive index of the germanium-antimony-selenium-tellurium (GSST) phase change material is employed to induce destructive interference between the waves passing through Mach-Zehnder interferometer (MZI) arms and to realize amplitude modulation. A novel, to the best of our knowledge, asymmetric input splitter is designed for the MZI to compensate for unwanted amplitude differences between MZI arms and increase the modulator performance. Three-dimensional finite-difference-time-domain simulations show a very high extinction ratio (ER) and low insertion loss (IL) of 45 and 2 dB, respectively, for the designed modulator at the wavelength of 1550 nm. Moreover, the ER is above 22 dB, and the IL is below 3.5 dB in the wavelength range of 1500-1600 nm. The thermal excitation process of GSST is also simulated using the finite-element method, and the speed and energy consumption of the modulator are estimated.

Compact nonvolatile polarization switch using an asymmetric Sb2Se3-loaded silicon waveguide

We propose and simulate a compact (∼29.5 µm-long) nonvolatile polarization switch based on an asymmetric Sb₂Se₃-clad silicon photonic waveguide. The polarization state is switched between TM₀ and TE₀ mode by modifying the phase of nonvolatile Sb₂Se₃ between amorphous and crystalline. When the Sb₂Se₃ is amorphous, two-mode interference happens in the polarization-rotation section resulting in efficient TE₀-TM₀ conversion. On the other hand, when the material is in the crystalline state, there is little polarization conversion because the interference between the two hybridized modes is significantly suppressed, and both TE₀ and TM₀ modes go through the device without any change. The designed polarization switch has a high polarization extinction ratio of > 20 dB and an ultra-low excess loss of < 0.22 dB in the wavelength range of 1520-1585 nm for both TE₀ and TM₀ modes.

Photonic time crystals: a materials perspective [Invited]

Recent advances in ultrafast, large-modulation photonic materials have opened the door to many new areas of research. One specific example is the exciting prospect of photonic time crystals. In this perspective, we outline the most recent material advances that are promising candidates for photonic time crystals. We discuss their merit in terms of modulation speed and depth. We also investigate the challenges yet to be faced and provide our estimation on possible roads to success.

Phase-change materials based on amorphous equichalcogenides

Phase-change materials, demonstrating a rapid switching between two distinct states with a sharp contrast in electrical, optical or magnetic properties, are vital for modern photonic and electronic devices. To date, this effect is observed in chalcogenide compounds based on Se, Te or both, and most recently in stoichiometric Sb₂S₃ composition. Yet, to achieve best integrability into modern photonics and electronics, the mixed S/Se/Te phase change medium is needed, which would allow a wide tuning range for such important physical properties as vitreous phase stability, radiation and photo-sensitivity, optical gap, electrical and thermal conductivity, non-linear optical effects, as well as the possibility of structural modification at nanoscale. In this work, a thermally-induced high-to-low resistivity switching below 200 °C is demonstrated in Sb-rich equichalcogenides (containing S, Se and Te in equal proportions). The nanoscale mechanism is associated with interchange between tetrahedral and octahedral coordination of Ge and Sb atoms, substitution of Te in the nearest Ge environment by S or Se, and Sb-Ge/Sb bonds formation upon further annealing. The material can be integrated into chalcogenide-based multifunctional platforms, neuromorphic computational systems, photonic devices and sensors.

Dopaminergic and adrenergic receptors synergistically stimulate browning in 3T3-L1 white adipocytes

The browning of white adipose tissue (WAT) has attracted considerable attention in the scientific community as a popular strategy for enhancing energy expenditure to combat obesity. As a part of this strategy, β3-adrenergic receptor (β3-AR) is the most widely studied receptor that mediates thermogenesis. Parenthetically, further studies in search for additional receptors expressed in adipocytes that can mediate thermogenesis has been appearing, and this paper reports that dopaminergic receptor 1 (DRD1) and β3-AR synergistically stimulate browning in 3T3-L1 white adipocytes. qRT-PCR and immunoblot analysis methods were applied to evaluate the effects of DRD1 on the target proteins downstream of β3-AR and other markers involved in lipid metabolism, mitochondrial biogenesis, and browning events. These results show that DRD1 is expressed in epididymal WAT (eWAT), brown adipose tissue (BAT), and inguinal WAT (iWAT) of normal and high-fat-fed mice, and a deficiency of DRD1 downregulates the expression of brown adipocyte-specific proteins. Silencing of DRD1 affected lipid metabolic activity in 3T3-L1 adipocytes by reducing mitochondrial biogenesis as well as levels of lipolytic and fat oxidative marker proteins in a similar pattern to β3-AR. Moreover, mechanistic studies showed that the depletion of DRD1 downregulates β3-AR and its downstream molecules, suggesting both receptors might synergistically stimulate browning. Parallel to the UCP1-dependent thermogenesis, the depletion of DRD1 also downregulates the expression of core proteins responsible for UCP1-independent thermogenesis. Overall, DRD1 mediates β3-AR-dependent 3T3-L1 browning and UCP1-independent thermogenesis.

Recent Progress of Diatomic Catalysts: General Design Fundamentals and Diversified Catalytic Applications

In recent years, some experiments and theoretical work have pointed out that diatomic catalysts not only retain the advantages of monoatomic catalysts, but also introduce a variety of interactions, which exceed the theoretical limit of catalytic performance and can be applied to many catalytic fields. Here, the interaction between adjacent metal atoms in diatomic catalysts is elaborated: synergistic effect, spacing enhancement effect (geometric effect), and electronic effect. With regard to the classification and characterization of various new diatomic catalysts, diatomic catalysts are classified into four categories: heteronuclear/homonuclear, with/without carbon carriers, and their characterization measures are introduced and explained in detail. In the aspect of preparation of diatomic catalysts, the widely used atomic layer deposition method, metal-organic framework derivative method, and simple ball milling method are introduced, with emphasis on the formation mechanism of diatomic catalysts. Finally, the effective control strategies of four diatomic catalysts and the key applications of diatomic catalysts in electrocatalysis, photocatalysis, thermal catalysis, and other catalytic fields are given.