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Islam MS, Chowdhury RK, Barthelemy M, Moczko L, Hebraud P, Berciaud S, Barsella A, Fras F. Large-Scale Statistical Analysis of Defect Emission in hBN: Revealing Spectral Families and Influence of Flake Morphology. ACS NANO 2024. [PMID: 39083640 DOI: 10.1021/acsnano.3c10403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2024]
Abstract
Quantum emitters in two-dimensional layered hexagonal boron nitride are quickly emerging as a highly promising platform for next-generation quantum technologies. However, the precise identification and control of defects are key parameters to achieve the next step in their development. We conducted a comprehensive study by analyzing over 10,000 photoluminescence emission lines from liquid exfoliated hBN nanoflake samples, revealing 11 narrow sets of defect families within the 1.6 to 2.2 eV energy range. This challenges hypotheses of a random energy distribution. We also reported averaged defect parameters, including emission line widths, spatial density, phonon side bands, and Franck-Condon-related factors. These findings provide valuable insights into deciphering the microscopic origin of emitters in hBN hosts. We also explored the influence of the hBN host morphology on defect family formation, demonstrating its crucial impact. By tuning the flake size and arrangement, we achieve selective control of defect types while maintaining high spatial density. This offers a scalable approach to defect emission control, diverging from costly engineering methods. It emphasizes the significance of the morphological aspects of hBN hosts for gaining insights into defect origins and expanding their spectral control.
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Affiliation(s)
- Md Samiul Islam
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Rup Kumar Chowdhury
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Marie Barthelemy
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Loic Moczko
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Pascal Hebraud
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Stephane Berciaud
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Alberto Barsella
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Francois Fras
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
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2
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Song H, Chen S, Sun X, Cui Y, Yildirim T, Kang J, Yang S, Yang F, Lu Y, Zhang L. Enhancing 2D Photonics and Optoelectronics with Artificial Microstructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2403176. [PMID: 39031754 DOI: 10.1002/advs.202403176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 06/04/2024] [Indexed: 07/22/2024]
Abstract
By modulating subwavelength structures and integrating functional materials, 2D artificial microstructures (2D AMs), including heterostructures, superlattices, metasurfaces and microcavities, offer a powerful platform for significant manipulation of light fields and functions. These structures hold great promise in high-performance and highly integrated optoelectronic devices. However, a comprehensive summary of 2D AMs remains elusive for photonics and optoelectronics. This review focuses on the latest breakthroughs in 2D AM devices, categorized into electronic devices, photonic devices, and optoelectronic devices. The control of electronic and optical properties through tuning twisted angles is discussed. Some typical strategies that enhance light-matter interactions are introduced, covering the integration of 2D materials with external photonic structures and intrinsic polaritonic resonances. Additionally, the influences of external stimuli, such as vertical electric fields, enhanced optical fields and plasmonic confinements, on optoelectronic properties is analysed. The integrations of these devices are also thoroughly addressed. Challenges and future perspectives are summarized to stimulate research and development of 2D AMs for future photonics and optoelectronics.
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Affiliation(s)
- Haizeng Song
- Henan Key Laboratory of Rare Earth Functional Materials, Zhoukou Normal University, Zhoukou, 466001, China
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
| | - Shuai Chen
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
| | - Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, ACT, 2601, Australia
| | - Yichun Cui
- National Key Laboratory of Science and Technology on Test Physics and Numerical Mathematics, Beijing, 100190, China
| | - Tanju Yildirim
- Faculty of Science and Engineering, Southern Cross University, East Lismore, NSW, 2480, Australia
| | - Jian Kang
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
| | - Shunshun Yang
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
| | - Fan Yang
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, ACT, 2601, Australia
| | - Linglong Zhang
- College of Physics, Nanjing University of Aeronautics and Astronautics, Key Laboratory of Aerospace Information Materials and Physics (NUAA), MIIT, Nanjing, 211106, China
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
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3
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Hlushchenko D, Olszewski J, Martynkien T, Łukomski M, Gemza K, Karasiński P, Zięba M, Baraniecki T, Duda Ł, Bachmatiuk A, Guzik M, Kudrawiec R. Waveguide-Coupled Light Photodetector Based on Two-Dimensional Molybdenum Disulfide. ACS APPLIED MATERIALS & INTERFACES 2024; 16:28874-28885. [PMID: 38795034 PMCID: PMC11163399 DOI: 10.1021/acsami.4c04854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2024]
Abstract
The integration of transition metal dichalcogenides with photonic structures such as sol-gel SiOx:TiOy optical waveguides (WGs) makes possible the fabrication of photonic devices with the desired characteristics in the visible spectral range. In this study, we propose and experimentally demonstrate a MoS2-based photodetector integrated with a sol-gel SiOx:TiOy WG. Based on the spectroscopic measurements performed for our device, we concluded that the light entering the WG is almost completely channeled out from the WG and absorbed by the MoS2 flake, which is deposited on the WG. Therefore, this device works as a photodetector. The light coupling into the MoS2 region in this device construction is due to the high contrast of refractive index between the van der Waals crystal and the sol-gel WG, which is ∼4 and ∼1.8, respectively. The obtained MoS2-based photodetectors exhibit a photoresponsivity of 0.3 A W-1 (n-type MoS2) and 7.53 mA W-1 (p-type MoS2) at a bias voltage of 2 V. These results reveal great potential in the integration of sol-gel WGs with van der Waals crystals in optoelectronic applications.
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Affiliation(s)
- Daria Hlushchenko
- Łukasiewicz
Research Network-PORT Polish Center for Technology Development, ul. Stabłowicka 147, 54-066 Wrocław, Poland
- Faculty
of Fundamental Problems of Science and Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
| | - Jacek Olszewski
- Faculty
of Fundamental Problems of Science and Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
| | - Tadeusz Martynkien
- Faculty
of Fundamental Problems of Science and Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
| | - Michał Łukomski
- Faculty
of Fundamental Problems of Science and Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
| | - Karolina Gemza
- Faculty
of Fundamental Problems of Science and Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
| | - Pawel Karasiński
- Department
of Optoelectronics, Silesian University
of Technology, ul. B. Krzywoustego 2, 44-100 Gliwice, Poland
| | - Magdalena Zięba
- Department
of Optoelectronics, Silesian University
of Technology, ul. B. Krzywoustego 2, 44-100 Gliwice, Poland
| | - Tomasz Baraniecki
- Łukasiewicz
Research Network-PORT Polish Center for Technology Development, ul. Stabłowicka 147, 54-066 Wrocław, Poland
| | - Łukasz Duda
- Łukasiewicz
Research Network-PORT Polish Center for Technology Development, ul. Stabłowicka 147, 54-066 Wrocław, Poland
- Faculty
of Chemistry, University of Wrocław, ul. F. Joliot-Curie 14, 50-383 Wrocław, Poland
| | - Alicja Bachmatiuk
- Łukasiewicz
Research Network-PORT Polish Center for Technology Development, ul. Stabłowicka 147, 54-066 Wrocław, Poland
| | - Małgorzata Guzik
- Łukasiewicz
Research Network-PORT Polish Center for Technology Development, ul. Stabłowicka 147, 54-066 Wrocław, Poland
- Faculty
of Chemistry, University of Wrocław, ul. F. Joliot-Curie 14, 50-383 Wrocław, Poland
| | - Robert Kudrawiec
- Łukasiewicz
Research Network-PORT Polish Center for Technology Development, ul. Stabłowicka 147, 54-066 Wrocław, Poland
- Faculty
of Fundamental Problems of Science and Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego
27, 50-370 Wrocław, Poland
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4
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Zhao Q, Chen L, Liang F, Wang S, Wang G, Yu H, Zhang H. Angular Engineering Strategy for Enhanced Surface Nonlinear Frequency Conversion in Centrosymmetric Topological Semimetal HfGe 0.92Te. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310438. [PMID: 38165969 DOI: 10.1002/adma.202310438] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2023] [Revised: 12/22/2023] [Indexed: 01/04/2024]
Abstract
Surface nonlinear optics are essential for developments in integrated photonics and micro/nano optoelectronics. However, the nonlinear optical conversion efficiency on a surface is restricted by the finite nonlinear susceptibility of matter and the intrinsic atomic-layered interaction length between light and matter. In this work, based on an angular engineering strategy, it is demonstrated that the centrosymmetric topological semimetal HfGe0.92Te crystal has a giant and anisotropic surface second-order nonlinear susceptibility up to 5535 ± 308 pm V-1 and exhibits efficient and unprecedented second-harmonic generation (SHG). The maximum optical conversion efficiency is found to be up to 3.75‰, which is 104 times higher than that obtained from a silicon surface. Because of the linear dispersion over a wide range of energies around the Dirac points, this high conversion efficiency can be maintained with SHG wavelengths ranging from the visible region (779 nm) to the deep-UV region (257.5 nm). This study can facilitate the development of topological photonics and integrated nonlinear photonics based on topological semimetals.
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Affiliation(s)
- Qiming Zhao
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Long Chen
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fei Liang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
- Institute of Materials Science, TU Darmstadt, 64287, Darmstadt, Germany
| | - Shuxian Wang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Gang Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Haohai Yu
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
| | - Huaijin Zhang
- State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China
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5
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Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
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Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
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6
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Sun X, Suriyage M, Khan AR, Gao M, Zhao J, Liu B, Hasan MM, Rahman S, Chen RS, Lam PK, Lu Y. Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications. Chem Rev 2024; 124:1992-2079. [PMID: 38335114 DOI: 10.1021/acs.chemrev.3c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Manuka Suriyage
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College Campus), Gujranwala, Lahore 54700, Pakistan
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Jie Zhao
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Md Mehedi Hasan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sharidya Rahman
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
| | - Ruo-Si Chen
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ping Koy Lam
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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7
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Yanev ES, Darlington TP, Ladyzhets SA, Strasbourg MC, Trovatello C, Liu S, Rhodes DA, Hall K, Sinha A, Borys NJ, Hone JC, Schuck PJ. Programmable nanowrinkle-induced room-temperature exciton localization in monolayer WSe 2. Nat Commun 2024; 15:1543. [PMID: 38378789 PMCID: PMC10879107 DOI: 10.1038/s41467-024-45936-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/02/2023] [Accepted: 02/08/2024] [Indexed: 02/22/2024] Open
Abstract
Localized states in two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been the subject of intense study, driven by potential applications in quantum information science. Despite the rapidly growing knowledge surrounding these emitters, their microscopic nature is still not fully understood, limiting their production and application. Motivated by this challenge, and by recent theoretical and experimental evidence showing that nanowrinkles generate strain-localized room-temperature emitters, we demonstrate a method to intentionally induce wrinkles with collections of stressors, showing that long-range wrinkle direction and position are controllable with patterned array design. Nano-photoluminescence (nano-PL) imaging combined with detailed strain modeling based on measured wrinkle topography establishes a correlation between wrinkle properties, particularly shear strain, and localized exciton emission. Beyond the array-induced wrinkles, nano-PL spatial maps further reveal that the strain environment around individual stressors is heterogeneous due to the presence of fine wrinkles that are less deterministic. At cryogenic temperatures, antibunched emission is observed, confirming that the nanocone-induced strain is sufficiently large for the formation of quantum emitters. At 300 K, detailed nanoscale hyperspectral images uncover a wide range of low-energy emission peaks originating from the fine wrinkles, and show that the states can be tightly confined to regions <10 nm, even in ambient conditions. These results establish a promising potential route towards realizing room temperature quantum emission in 2D TMDC systems.
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Affiliation(s)
- Emanuil S Yanev
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Thomas P Darlington
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Sophia A Ladyzhets
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | | | - Chiara Trovatello
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Song Liu
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Daniel A Rhodes
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, USA
| | - Kobi Hall
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Aditya Sinha
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Nicholas J Borys
- Department of Physics, Montana State University, Bozeman, MT, USA.
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, USA.
| | - P James Schuck
- Department of Mechanical Engineering, Columbia University, New York, NY, USA.
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8
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Liu A, Zhang X, Liu Z, Li Y, Peng X, Li X, Qin Y, Hu C, Qiu Y, Jiang H, Wang Y, Li Y, Tang J, Liu J, Guo H, Deng T, Peng S, Tian H, Ren TL. The Roadmap of 2D Materials and Devices Toward Chips. NANO-MICRO LETTERS 2024; 16:119. [PMID: 38363512 PMCID: PMC10873265 DOI: 10.1007/s40820-023-01273-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Accepted: 10/30/2023] [Indexed: 02/17/2024]
Abstract
Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore's law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.
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Affiliation(s)
- Anhan Liu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Xiaowei Zhang
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Ziyu Liu
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yuning Li
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China
| | - Xueyang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Chen Hu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yanqing Qiu
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China
- School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Han Jiang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yang Wang
- School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China
| | - Yifan Li
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, People's Republic of China.
| | - Tao Deng
- School of Electronic and Information Engineering, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
- IMECAS-HKUST-Joint Laboratory of Microelectronics, Beijing, 100029, People's Republic of China.
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
| | - Tian-Ling Ren
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100049, People's Republic of China.
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9
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Wang J, He L, Zhang Y, Nong H, Li S, Wu Q, Tan J, Liu B. Locally Strained 2D Materials: Preparation, Properties, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2314145. [PMID: 38339886 DOI: 10.1002/adma.202314145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 01/28/2024] [Indexed: 02/12/2024]
Abstract
2D materials are promising for strain engineering due to their atomic thickness and exceptional mechanical properties. In particular, non-uniform and localized strain can be induced in 2D materials by generating out-of-plane deformations, resulting in novel phenomena and properties, as witnessed in recent years. Therefore, the locally strained 2D materials are of great value for both fundamental studies and practical applications. This review discusses techniques for introducing local strains to 2D materials, and their feasibility, advantages, and challenges. Then, the unique effects and properties that arise from local strain are explored. The representative applications based on locally strained 2D materials are illustrated, including memristor, single photon emitter, and photodetector. Finally, concluding remarks on the challenges and opportunities in the emerging field of locally strained 2D materials are provided.
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Affiliation(s)
- Jingwei Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Liqiong He
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Yunhao Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Huiyu Nong
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Shengnan Li
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Qinke Wu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
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10
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Kumar P, Chen J, Meng AC, Yang WCD, Anantharaman SB, Horwath JP, Idrobo JC, Mishra H, Liu Y, Davydov AV, Stach EA, Jariwala D. Observation of Sub-10 nm Transition Metal Dichalcogenide Nanocrystals in Rapidly Heated van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59693-59703. [PMID: 38090759 DOI: 10.1021/acsami.3c13471] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), have the potential to revolutionize the field of electronics and photonics due to their unique physical and structural properties. This research presents a novel method for synthesizing crystalline TMDCs crystals with <10 nm size using ultrafast migration of vacancies at elevated temperatures. Through in situ and ex situ processing and using atomic-level characterization techniques, we analyzed the shape, size, crystallinity, composition, and strain distribution of these nanocrystals. These nanocrystals exhibit electronic structure signatures that differ from the 2D bulk: i.e., uniform mono- and multilayers. Further, our in situ, vacuum-based synthesis technique allows observation and comparison of defect and phase evolution in these crystals formed under van der Waals heterostructure confinement versus unconfined conditions. Overall, this research demonstrates a solid-state route to synthesizing uniform nanocrystals of TMDCs and lays the foundation for materials science in confined 2D spaces under extreme conditions.
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Affiliation(s)
- Pawan Kumar
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Inter-university Microelectronics Center (IMEC), Leuven 3001, Belgium
| | - Jiazheng Chen
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Andrew C Meng
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Wei-Chang D Yang
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Low-dimensional Semiconductors Lab, Metallurgical and Materials Engineering, Indian Institute of Technology-Madras, Chennai, Tamilnadu 600036, India
| | - James P Horwath
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Juan C Idrobo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37830, United States
- Materials Science & Engineering, University of Washington, Seattle, Washington 98195, United States
| | - Himani Mishra
- Department of Mechanical Engineering and Texas Materials Institute, University of Texas, Austin, Texas 78712, United States
| | - Yuanyue Liu
- Department of Mechanical Engineering and Texas Materials Institute, University of Texas, Austin, Texas 78712, United States
| | - Albert V Davydov
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Eric A Stach
- Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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11
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Naumis GG, Herrera SA, Poudel SP, Nakamura H, Barraza-Lopez S. Mechanical, electronic, optical, piezoelectric and ferroic properties of strained graphene and other strained monolayers and multilayers: an update. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:016502. [PMID: 37879327 DOI: 10.1088/1361-6633/ad06db] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Accepted: 10/25/2023] [Indexed: 10/27/2023]
Abstract
This is an update of a previous review (Naumiset al2017Rep. Prog. Phys.80096501). Experimental and theoretical advances for straining graphene and other metallic, insulating, ferroelectric, ferroelastic, ferromagnetic and multiferroic 2D materials were considered. We surveyed (i) methods to induce valley and sublattice polarisation (P) in graphene, (ii) time-dependent strain and its impact on graphene's electronic properties, (iii) the role of local and global strain on superconductivity and other highly correlated and/or topological phases of graphene, (iv) inducing polarisationPon hexagonal boron nitride monolayers via strain, (v) modifying the optoelectronic properties of transition metal dichalcogenide monolayers through strain, (vi) ferroic 2D materials with intrinsic elastic (σ), electric (P) and magnetic (M) polarisation under strain, as well as incipient 2D multiferroics and (vii) moiré bilayers exhibiting flat electronic bands and exotic quantum phase diagrams, and other bilayer or few-layer systems exhibiting ferroic orders tunable by rotations and shear strain. The update features the experimental realisations of a tunable two-dimensional Quantum Spin Hall effect in germanene, of elemental 2D ferroelectric bismuth, and 2D multiferroic NiI2. The document was structured for a discussion of effects taking place in monolayers first, followed by discussions concerning bilayers and few-layers, and it represents an up-to-date overview of exciting and newest developments on the fast-paced field of 2D materials.
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Affiliation(s)
- Gerardo G Naumis
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Saúl A Herrera
- Departamento de Sistemas Complejos, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apdo. Postal 20-364, CDMX, 01000, Mexico
| | - Shiva P Poudel
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Hiro Nakamura
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
| | - Salvador Barraza-Lopez
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, United States of America
- MonArk NSF Quantum Foundry, University of Arkansas, Fayetteville, AR 72701, United States of America
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12
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Zhao H, Ma Y, Gao Z, Liu N, Wu T, Wu S, Feng X, Hone J, Strauf S, Feng L. High-Purity Generation and Switching of Twisted Single Photons. PHYSICAL REVIEW LETTERS 2023; 131:183801. [PMID: 37977645 DOI: 10.1103/physrevlett.131.183801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Accepted: 10/05/2023] [Indexed: 11/19/2023]
Abstract
Quantum technologies, if scaled into a high-dimensional Hilbert space, can dramatically enhance connection capabilities with supporting higher bit rates and ultrasecure information transfer. Twisted single photons, carrying orbital angular momentum (OAM) as an unbounded dimension, could address the growing demand for high-dimensional quantum information encoding and transmission. By hybrid integration of two-dimensional semiconductor WSe_{2} with a spin-orbit-coupled microring resonator, we demonstrate an integrated tunable twisted single photon source with the ability to precisely define and switch between highly pure spin-OAM states. Our results feature a single photon purity of g^{(2)}(0)∼0.13 with a cavity-enhanced quantum yield of 76% and a high OAM mode purity up to 96.9%. Moreover, the demonstrated quantum-chiral control can also enable new quantum functionality such as single photon routing for efficient quantum information processing on chip.
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Affiliation(s)
- Haoqi Zhao
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Yichen Ma
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
| | - Zihe Gao
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Na Liu
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
| | - Tianwei Wu
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Shuang Wu
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - Xilin Feng
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA
| | - Stefan Strauf
- Department of Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
- Center for Quantum Science and Engineering, Stevens Institute of Technology, Hoboken, New Jersey 07030, USA
| | - Liang Feng
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
- Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
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13
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Li X, Jones AC, Choi J, Zhao H, Chandrasekaran V, Pettes MT, Piryatinski A, Tschudin MA, Reiser P, Broadway DA, Maletinsky P, Sinitsyn N, Crooker SA, Htoon H. Proximity-induced chiral quantum light generation in strain-engineered WSe 2/NiPS 3 heterostructures. NATURE MATERIALS 2023; 22:1311-1316. [PMID: 37592028 DOI: 10.1038/s41563-023-01645-7] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Accepted: 07/18/2023] [Indexed: 08/19/2023]
Abstract
Quantum light emitters capable of generating single photons with circular polarization and non-classical statistics could enable non-reciprocal single-photon devices and deterministic spin-photon interfaces for quantum networks. To date, the emission of such chiral quantum light relies on the application of intense external magnetic fields, electrical/optical injection of spin-polarized carriers/excitons or coupling with complex photonic metastructures. Here we report the creation of free-space chiral quantum light emitters via the nanoindentation of monolayer WSe2/NiPS3 heterostructures at zero external magnetic field. These quantum light emitters emit with a high degree of circular polarization (0.89) and single-photon purity (95%), independent of pump laser polarization. Scanning diamond nitrogen-vacancy microscopy and temperature-dependent magneto-photoluminescence studies reveal that the chiral quantum light emission arises from magnetic proximity interactions between localized excitons in the WSe2 monolayer and the out-of-plane magnetization of defects in the antiferromagnetic order of NiPS3, both of which are co-localized by strain fields associated with the nanoscale indentations.
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Affiliation(s)
- Xiangzhi Li
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Andrew C Jones
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Junho Choi
- National High Magnetic Field Laboratory, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Huan Zhao
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Vigneshwaran Chandrasekaran
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Michael T Pettes
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Andrei Piryatinski
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | | | - Patrick Reiser
- Department of Physics, University of Basel, Basel, Switzerland
| | | | | | - Nikolai Sinitsyn
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Scott A Crooker
- National High Magnetic Field Laboratory, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA
| | - Han Htoon
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, USA.
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14
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Tang L, Zou J. p-Type Two-Dimensional Semiconductors: From Materials Preparation to Electronic Applications. NANO-MICRO LETTERS 2023; 15:230. [PMID: 37848621 PMCID: PMC10582003 DOI: 10.1007/s40820-023-01211-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2023] [Accepted: 09/04/2023] [Indexed: 10/19/2023]
Abstract
Two-dimensional (2D) materials are regarded as promising candidates in many applications, including electronics and optoelectronics, because of their superior properties, including atomic-level thickness, tunable bandgaps, large specific surface area, and high carrier mobility. In order to bring 2D materials from the laboratory to industrialized applications, materials preparation is the first prerequisite. Compared to the n-type analogs, the family of p-type 2D semiconductors is relatively small, which limits the broad integration of 2D semiconductors in practical applications such as complementary logic circuits. So far, many efforts have been made in the preparation of p-type 2D semiconductors. In this review, we overview recent progresses achieved in the preparation of p-type 2D semiconductors and highlight some promising methods to realize their controllable preparation by following both the top-down and bottom-up strategies. Then, we summarize some significant application of p-type 2D semiconductors in electronic and optoelectronic devices and their superiorities. In end, we conclude the challenges existed in this field and propose the potential opportunities in aspects from the discovery of novel p-type 2D semiconductors, their controlled mass preparation, compatible engineering with silicon production line, high-κ dielectric materials, to integration and applications of p-type 2D semiconductors and their heterostructures in electronic and optoelectronic devices. Overall, we believe that this review will guide the design of preparation systems to fulfill the controllable growth of p-type 2D semiconductors with high quality and thus lay the foundations for their potential application in electronics and optoelectronics.
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Affiliation(s)
- Lei Tang
- Songshan Lake Materials Laboratory, Dongguan, 523808, Guangdong, People's Republic of China.
| | - Jingyun Zou
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, 215009, Jiangsu, People's Republic of China.
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15
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Descamps T, Schetelat T, Gao J, Poole PJ, Dalacu D, Elshaari AW, Zwiller V. Dynamic Strain Modulation of a Nanowire Quantum Dot Compatible with a Thin-Film Lithium Niobate Photonic Platform. ACS PHOTONICS 2023; 10:3691-3699. [PMID: 37869556 PMCID: PMC10588554 DOI: 10.1021/acsphotonics.3c00821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Indexed: 10/24/2023]
Abstract
The integration of indistinguishable single photon sources in photonic circuits is a major prerequisite for on-chip quantum applications. Among the various high-quality sources, nanowire quantum dots can be efficiently coupled to optical waveguides because of their preferred emission direction along their growth direction. However, local tuning of the emission properties remains challenging. In this work, we transfer a nanowire quantum dot onto a bulk lithium niobate substrate and show that its emission can be dynamically tuned by acousto-optical coupling with surface acoustic waves. The purity of the single photon source is preserved during the strain modulation. We further demonstrate that the transduction is maintained even with a SiO2 encapsulation layer deposited on top of the nanowire acting as the cladding of a photonic circuit. Based on these experimental findings and numerical simulations, we introduce a device architecture consisting of a nanowire quantum dot efficiently coupled to a thin-film lithium niobate rib waveguide and strain-tunable by surface acoustic waves.
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Affiliation(s)
- Thomas Descamps
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
| | - Tanguy Schetelat
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
| | - Jun Gao
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
| | - Philip J. Poole
- National
Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada
| | - Dan Dalacu
- National
Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada
| | - Ali W. Elshaari
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
| | - Val Zwiller
- Department
of Applied Physics, KTH Royal Institute
of Technology, Roslagstullsbacken
21, 10691 Stockholm, Sweden
- Single
Quantum BV, Rotterdamseweg
394, 2629HH Delft, The Netherlands
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16
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Weng HC, Monroy-Ruz J, Matthews JCF, Rarity JG, Balram KC, Smith JA. Heterogeneous Integration of Solid-State Quantum Systems with a Foundry Photonics Platform. ACS PHOTONICS 2023; 10:3302-3309. [PMID: 37743942 PMCID: PMC10515700 DOI: 10.1021/acsphotonics.3c00713] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Indexed: 09/26/2023]
Abstract
Diamond color centers are promising optically addressable solid-state spins that can be matter-qubits, mediate deterministic interaction between photons, and act as single photon emitters. Useful quantum computers will comprise millions of logical qubits. To become useful in constructing quantum computers, spin-photon interfaces must, therefore, become scalable and be compatible with mass-manufacturable photonics and electronics. Here, we demonstrate the heterogeneous integration of NV centers in nanodiamond with low-fluorescence silicon nitride photonics from a standard 180 nm CMOS foundry process. Nanodiamonds are positioned over predefined sites in a regular array on a waveguide in a single postprocessing step. Using an array of optical fibers, we excite NV centers selectively from an array of six integrated nanodiamond sites and collect the photoluminescence (PL) in each case into waveguide circuitry on-chip. We verify single photon emission by an on-chip Hanbury Brown and Twiss cross-correlation measurement, which is a key characterization experiment otherwise typically performed routinely with discrete optics. Our work opens up a simple and effective route to simultaneously address large arrays of individual optically active spins at scale, without requiring discrete bulk optical setups. This is enabled by the heterogeneous integration of NV center nanodiamonds with CMOS photonics.
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Affiliation(s)
- Hao-Cheng Weng
- Quantum
Engineering Technology
Laboratories, H. H. Wills Physics Laboratory and Department of Electrical
and Electronic Engineering, University of
Bristol, Bristol BS8 1UB, United
Kingdom
| | - Jorge Monroy-Ruz
- Quantum
Engineering Technology
Laboratories, H. H. Wills Physics Laboratory and Department of Electrical
and Electronic Engineering, University of
Bristol, Bristol BS8 1UB, United
Kingdom
| | - Jonathan C. F. Matthews
- Quantum
Engineering Technology
Laboratories, H. H. Wills Physics Laboratory and Department of Electrical
and Electronic Engineering, University of
Bristol, Bristol BS8 1UB, United
Kingdom
| | - John G. Rarity
- Quantum
Engineering Technology
Laboratories, H. H. Wills Physics Laboratory and Department of Electrical
and Electronic Engineering, University of
Bristol, Bristol BS8 1UB, United
Kingdom
| | - Krishna C. Balram
- Quantum
Engineering Technology
Laboratories, H. H. Wills Physics Laboratory and Department of Electrical
and Electronic Engineering, University of
Bristol, Bristol BS8 1UB, United
Kingdom
| | - Joe A. Smith
- Quantum
Engineering Technology
Laboratories, H. H. Wills Physics Laboratory and Department of Electrical
and Electronic Engineering, University of
Bristol, Bristol BS8 1UB, United
Kingdom
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17
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Ripin A, Peng R, Zhang X, Chakravarthi S, He M, Xu X, Fu KM, Cao T, Li M. Tunable phononic coupling in excitonic quantum emitters. NATURE NANOTECHNOLOGY 2023; 18:1020-1026. [PMID: 37264087 DOI: 10.1038/s41565-023-01410-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Accepted: 04/28/2023] [Indexed: 06/03/2023]
Abstract
Engineering the coupling between fundamental quantum excitations is at the heart of quantum science and technologies. An outstanding case is the creation of quantum light sources in which coupling between single photons and phonons can be controlled and harnessed to enable quantum information transduction. Here we report the deterministic creation of quantum emitters featuring highly tunable coupling between excitons and phonons. The quantum emitters are formed in strain-induced quantum dots created in homobilayer WSe2. The colocalization of quantum-confined interlayer excitons and terahertz interlayer breathing-mode phonons, which directly modulates the exciton energy, leads to a uniquely strong phonon coupling to single-photon emission, with a Huang-Rhys factor reaching up to 6.3. The single-photon spectrum of interlayer exciton emission features a single-photon purity >83% and multiple phonon replicas, each heralding the creation of a phonon Fock state in the quantum emitter. Due to the vertical dipole moment of the interlayer exciton, the phonon-photon interaction is electrically tunable to be higher than the exciton and phonon decoherence rate, and hence promises to reach the strong-coupling regime. Our result demonstrates a solid-state quantum excitonic-optomechanical system at the atomic interface of the WSe2 bilayer that emits flying photonic qubits coupled with stationary phonons, which could be exploited for quantum transduction and interconnection.
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Affiliation(s)
- Adina Ripin
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Ruoming Peng
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA.
| | - Xiaowei Zhang
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | | | - Minhao He
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Kai-Mei Fu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA
- Physical Sciences Division, Pacific Northwest National Laboratory, Richland, WA, USA
| | - Ting Cao
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Mo Li
- Department of Physics, University of Washington, Seattle, WA, USA.
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA.
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18
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Zhang M, Yang L, Wu X, Wang J. Black Phosphorus for Photonic Integrated Circuits. RESEARCH (WASHINGTON, D.C.) 2023; 6:0206. [PMID: 37593339 PMCID: PMC10430873 DOI: 10.34133/research.0206] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 07/19/2023] [Indexed: 08/19/2023]
Abstract
Black phosphorus gives several advantages and complementarities over other two-dimensional materials. It has drawn extensive interest owing to its relatively high carrier mobility, wide tunable bandgap, and in-plane anisotropy in recent years. This manuscript briefly reviews the structure and physical properties of black phosphorus and targets on black phosphorus for photonic integrated circuits. Some of the applications are discussed including photodetection, optical modulation, light emission, and polarization conversion. Corresponding recent progresses, associated challenges, and future potentials are covered.
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Affiliation(s)
| | | | | | - Junjia Wang
- National Research Center for Optical Sensors/communications Integrated Networks, School of Electronic Science and Engineering,
Southeast University, 2 Sipailou, Nanjing 210096, China
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19
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Guo S, Germanis S, Taniguchi T, Watanabe K, Withers F, Luxmoore IJ. Electrically Driven Site-Controlled Single Photon Source. ACS PHOTONICS 2023; 10:2549-2555. [PMID: 37602287 PMCID: PMC10436352 DOI: 10.1021/acsphotonics.3c00097] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Indexed: 08/22/2023]
Abstract
Single photon sources are fundamental building blocks for quantum communication and computing technologies. In this work, we present a device geometry consisting of gold pillars embedded in a van der Waals heterostructure of graphene, hexagonal boron nitride, and tungsten diselenide. The gold pillars serve to both generate strain and inject charge carriers, allowing us to simultaneously demonstrate the positional control and electrical pumping of a single photon emitter. Moreover, increasing the thickness of the hexagonal boron nitride tunnel barriers restricts electroluminescence but enables electrical control of the emission energy of the site-controlled single photon emitters, with measured energy shifts reaching 40 meV.
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Affiliation(s)
- Shi Guo
- Department
of Physics and Astronomy, University of
Exeter, Exeter EX4 4QL, United
Kingdom
| | - Savvas Germanis
- Department
of Engineering, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Freddie Withers
- Department
of Physics and Astronomy, University of
Exeter, Exeter EX4 4QL, United
Kingdom
| | - Isaac J. Luxmoore
- Department
of Engineering, University of Exeter, Exeter EX4 4QF, United Kingdom
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20
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Yang L, Yuan Y, Fu B, Yang J, Dai D, Shi S, Yan S, Zhu R, Han X, Li H, Zuo Z, Wang C, Huang Y, Jin K, Gong Q, Xu X. Revealing broken valley symmetry of quantum emitters in WSe 2 with chiral nanocavities. Nat Commun 2023; 14:4265. [PMID: 37460549 DOI: 10.1038/s41467-023-39972-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2023] [Accepted: 07/05/2023] [Indexed: 07/20/2023] Open
Abstract
Single photon emission of quantum emitters (QEs) carrying internal degrees of freedom such as spin and angular momentum plays an important role in quantum optics. Recently, QEs in two-dimensional semiconductors have attracted great interest as promising quantum light sources. However, whether those QEs are characterized by the same valley physics as delocalized valley excitons is still under debate. Moreover, the potential applications of such QEs still need to be explored. Here we show experimental evidence of valley symmetry breaking for neutral QEs in WSe2 monolayer by interacting with chiral plasmonic nanocavities. The anomalous magneto-optical behaviour of the coupled QEs suggests that the polarization state of emitted photon is modulated by the chiral nanocavity instead of the valley-dependent optical selection rules. Calculations of cavity quantum electrodynamics further show the absence of intrinsic valley polarization. The cavity-dependent circularly polarized single-photon output also offers a strategy for future applications in chiral quantum optics.
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Affiliation(s)
- Longlong Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yu Yuan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Bowen Fu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Jingnan Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Danjie Dai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shushu Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Sai Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Rui Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xu Han
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Hancong Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
| | - Zhanchun Zuo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China.
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
| | - Xiulai Xu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, 100871, Beijing, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China.
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21
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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22
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Gartman AD, Shorokhov AS, Fedyanin AA. Efficient Light Coupling and Purcell Effect Enhancement for Interlayer Exciton Emitters in 2D Heterostructures Combined with SiN Nanoparticles. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1821. [PMID: 37368251 DOI: 10.3390/nano13121821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Revised: 05/08/2023] [Accepted: 06/06/2023] [Indexed: 06/28/2023]
Abstract
Optimal design of a silicon nitride waveguide structure composed of resonant nanoantennas for efficient light coupling with interlayer exciton emitters in a MoSe2-WSe2 heterostructure is proposed. Numerical simulations demonstrate up to eight times coupling efficiency improvement and twelve times Purcell effect enhancement in comparison with a conventional strip waveguide. Achieved results can be beneficial for development of on-chip non-classical light sources.
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Affiliation(s)
- Alexandra D Gartman
- Faculty of Physics, Lomonosov Moscow State University, Moscow 119991, Russia
| | | | - Andrey A Fedyanin
- Faculty of Physics, Lomonosov Moscow State University, Moscow 119991, Russia
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23
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Zhu CY, Zhang Z, Qin JK, Wang Z, Wang C, Miao P, Liu Y, Huang PY, Zhang Y, Xu K, Zhen L, Chai Y, Xu CY. Two-dimensional semiconducting SnP 2Se 6 with giant second-harmonic-generation for monolithic on-chip electronic-photonic integration. Nat Commun 2023; 14:2521. [PMID: 37130849 PMCID: PMC10154306 DOI: 10.1038/s41467-023-38131-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2022] [Accepted: 04/17/2023] [Indexed: 05/04/2023] Open
Abstract
Two-dimensional (2D) layered semiconductors with nonlinear optical (NLO) properties hold great promise to address the growing demand of multifunction integration in electronic-photonic integrated circuits (EPICs). However, electronic-photonic co-design with 2D NLO semiconductors for on-chip telecommunication is limited by their essential shortcomings in terms of unsatisfactory optoelectronic properties, odd-even layer-dependent NLO activity and low NLO susceptibility in telecom band. Here we report the synthesis of 2D SnP2Se6, a van der Waals NLO semiconductor exhibiting strong odd-even layer-independent second harmonic generation (SHG) activity at 1550 nm and pronounced photosensitivity under visible light. The combination of 2D SnP2Se6 with a SiN photonic platform enables the chip-level multifunction integration for EPICs. The hybrid device not only features efficient on-chip SHG process for optical modulation, but also allows the telecom-band photodetection relying on the upconversion of wavelength from 1560 to 780 nm. Our finding offers alternative opportunities for the collaborative design of EPICs.
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Affiliation(s)
- Cheng-Yi Zhu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Zimeng Zhang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Jing-Kai Qin
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.
| | - Zi Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Cong Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Peng Miao
- HORIBA Scientific, Shanghai, 205335, China
| | - Yingjie Liu
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Pei-Yu Huang
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Yao Zhang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
| | - Ke Xu
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.
| | - Liang Zhen
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, China.
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China.
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24
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Liu XJ, Yu Y, Liu D, Cui QL, Qi X, Chen Y, Qu G, Song L, Guo GP, Guo GC, Sun X, Ren XF. Coupling of Photon Emitters in Monolayer WS 2 with a Photonic Waveguide Based on Bound States in the Continuum. NANO LETTERS 2023; 23:3209-3216. [PMID: 37040479 DOI: 10.1021/acs.nanolett.2c05034] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
On-chip light sources are an essential component of scalable photonic integrated circuits (PICs), and coupling between light sources and waveguides has attracted a great deal of attention. Photonic waveguides based on bound states in the continuum (BICs) allow optical confinement in a low-refractive-index waveguide on a high-refractive-index substrate and thus can be employed for constructing PICs. In this work, we experimentally demonstrated that the photoluminescence (PL) from a monolayer of tungsten sulfide (WS2) could be coupled into a BIC waveguide on a lithium-niobate-on-insulator (LNOI) substrate. Using finite-difference time-domain simulations, we numerically obtained a coupling efficiency of ∼2.3% for an in-plane-oriented dipole and a near-zero loss at a wavelength of 620 nm. By breaking through the limits of 2D-material integration with conventional photonic architectures, our work offers a new perspective for light-matter coupling in monolithic PICs.
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Affiliation(s)
- Xiao-Jing Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Yue Yu
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin Hong Kong SAR, China
| | - Di Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Qi-Long Cui
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Xiaozhuo Qi
- School of Physical Science and Technology, Tiangong University, Tianjin 300387, China
| | - Yang Chen
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Guangyuan Qu
- School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Li Song
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Guo-Ping Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Xiankai Sun
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin Hong Kong SAR, China
| | - Xi-Feng Ren
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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25
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Chandrasekaran V, Titze M, Flores AR, Campbell D, Henshaw J, Jones AC, Bielejec ES, Htoon H. High-Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2300190. [PMID: 37088736 DOI: 10.1002/advs.202300190] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Revised: 03/25/2023] [Indexed: 05/03/2023]
Abstract
Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created-a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.
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Affiliation(s)
- Vigneshwaran Chandrasekaran
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Michael Titze
- Sandia National Laboratories, Albuquerque, NM, 87123, USA
| | | | | | - Jacob Henshaw
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, NM, 87123, USA
| | - Andrew C Jones
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | | | - Han Htoon
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
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26
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Utama MIB, Zeng H, Sadhukhan T, Dasgupta A, Gavin SC, Ananth R, Lebedev D, Wang W, Chen JS, Watanabe K, Taniguchi T, Marks TJ, Ma X, Weiss EA, Schatz GC, Stern NP, Hersam MC. Chemomechanical modification of quantum emission in monolayer WSe 2. Nat Commun 2023; 14:2193. [PMID: 37069140 PMCID: PMC10110606 DOI: 10.1038/s41467-023-37892-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2023] [Accepted: 04/04/2023] [Indexed: 04/19/2023] Open
Abstract
Two-dimensional (2D) materials have attracted attention for quantum information science due to their ability to host single-photon emitters (SPEs). Although the properties of atomically thin materials are highly sensitive to surface modification, chemical functionalization remains unexplored in the design and control of 2D material SPEs. Here, we report a chemomechanical approach to modify SPEs in monolayer WSe2 through the synergistic combination of localized mechanical strain and noncovalent surface functionalization with aryl diazonium chemistry. Following the deposition of an aryl oligomer adlayer, the spectrally complex defect-related emission of strained monolayer WSe2 is simplified into spectrally isolated SPEs with high single-photon purity. Density functional theory calculations reveal energetic alignment between WSe2 defect states and adsorbed aryl oligomer energy levels, thus providing insight into the observed chemomechanically modified quantum emission. By revealing conditions under which chemical functionalization tunes SPEs, this work broadens the parameter space for controlling quantum emission in 2D materials.
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Affiliation(s)
- M Iqbal Bakti Utama
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Hongfei Zeng
- Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208, USA
| | - Tumpa Sadhukhan
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India
| | - Anushka Dasgupta
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - S Carin Gavin
- Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208, USA
| | - Riddhi Ananth
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Dmitry Lebedev
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Wei Wang
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Jia-Shiang Chen
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, 60439, USA
- Northwestern-Argonne Institute of Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Tobin J Marks
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - Xuedan Ma
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL, 60439, USA
- Northwestern-Argonne Institute of Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Emily A Weiss
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA
| | - George C Schatz
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA.
| | - Nathaniel P Stern
- Department of Physics and Astronomy, Northwestern University, Evanston, IL, 60208, USA.
| | - Mark C Hersam
- Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA.
- Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, 60208, USA.
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA.
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27
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Peng M, Cheng J, Zheng X, Ma J, Feng Z, Sun X. 2D-materials-integrated optoelectromechanics: recent progress and future perspectives. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 86:026402. [PMID: 36167057 DOI: 10.1088/1361-6633/ac953e] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2022] [Accepted: 09/27/2022] [Indexed: 06/16/2023]
Abstract
The discovery of two-dimensional (2D) materials has gained worldwide attention owing to their extraordinary optical, electrical, and mechanical properties. Due to their atomic layer thicknesses, the emerging 2D materials have great advantages of enhanced interaction strength, broad operating bandwidth, and ultralow power consumption for optoelectromechanical coupling. The van der Waals (vdW) epitaxy or multidimensional integration of 2D material family provides a promising platform for on-chip advanced nano-optoelectromechanical systems (NOEMS). Here, we provide a comprehensive review on the nanomechanical properties of 2D materials and the recent advances of 2D-materials-integrated nano-electromechanical systems and nano-optomechanical systems. By utilizing active nanophotonics and optoelectronics as the interface, 2D active NOEMS and their coupling effects are particularly highlighted at the 2D atomic scale. Finally, we share our viewpoints on the future perspectives and key challenges of scalable 2D-materials-integrated active NOEMS for on-chip miniaturized, lightweight, and multifunctional integration applications.
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Affiliation(s)
- Mingzeng Peng
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083,People's Republic of China
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Special Administrative Region of China
| | - Jiadong Cheng
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083,People's Republic of China
| | - Xinhe Zheng
- Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083,People's Republic of China
| | - Jingwen Ma
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Special Administrative Region of China
| | - Ziyao Feng
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Special Administrative Region of China
| | - Xiankai Sun
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong Special Administrative Region of China
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28
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Xu X, Solanki AB, Sychev D, Gao X, Peana S, Baburin AS, Pagadala K, Martin ZO, Chowdhury SN, Chen YP, Taniguchi T, Watanabe K, Rodionov IA, Kildishev AV, Li T, Upadhyaya P, Boltasseva A, Shalaev VM. Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nanocavity. NANO LETTERS 2023; 23:25-33. [PMID: 36383034 DOI: 10.1021/acs.nanolett.2c03100] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The negatively charged boron vacancy (VB-) defect in hexagonal boron nitride (hBN) with optically addressable spin states has emerged due to its potential use in quantum sensing. Remarkably, VB- preserves its spin coherence when it is implanted at nanometer-scale distances from the hBN surface, potentially enabling ultrathin quantum sensors. However, its low quantum efficiency hinders its practical applications. Studies have reported improving the overall quantum efficiency of VB- defects with plasmonics; however, the overall enhancements of up to 17 times reported to date are relatively modest. Here, we demonstrate much higher emission enhancements of VB- with low-loss nanopatch antennas (NPAs). An overall intensity enhancement of up to 250 times is observed, corresponding to an actual emission enhancement of ∼1685 times by the NPA, along with preserved optically detected magnetic resonance contrast. Our results establish NPA-coupled VB- defects as high-resolution magnetic field sensors and provide a promising approach to obtaining single VB- defects.
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Affiliation(s)
- Xiaohui Xu
- School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
| | - Abhishek B Solanki
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Demid Sychev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Xingyu Gao
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
| | - Samuel Peana
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Aleksandr S Baburin
- FMN Laboratory, Bauman Moscow State Technical University, Moscow105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow127055, Russia
| | - Karthik Pagadala
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Zachariah O Martin
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Sarah N Chowdhury
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
| | - Yong P Chen
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, 8000Aarhus-C, Denmark
- WPI-AIMR International Research Center for Materials Sciences, Tohoku University, Sendai980-8577, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - Ilya A Rodionov
- FMN Laboratory, Bauman Moscow State Technical University, Moscow105005, Russia
- Dukhov Automatics Research Institute (VNIIA), Moscow127055, Russia
| | - Alexander V Kildishev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
| | - Tongcang Li
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
| | - Pramey Upadhyaya
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Alexandra Boltasseva
- School of Materials Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
| | - Vladimir M Shalaev
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana47907, United States
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana47907, United States
- Purdue Quantum Science and Engineering Institute (PQSEI), Purdue University, West Lafayette, Indiana47907, United States
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge National Laboratory, Oak Ridge, Tennessee37831, United States
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29
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Stevens CE, Chuang HJ, Rosenberger MR, McCreary KM, Dass CK, Jonker BT, Hendrickson JR. Enhancing the Purity of Deterministically Placed Quantum Emitters in Monolayer WSe 2. ACS NANO 2022; 16:20956-20963. [PMID: 36445838 DOI: 10.1021/acsnano.2c08553] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
We present a method utilizing an applied electrostatic potential for suppressing the broad defect bound excitonic emission in two-dimensional materials (2DMs) which otherwise inhibits the purity of strain induced single photon emitters (SPEs). Our heterostructure consists of a WSe2 monolayer on a polymer in which strain has been deterministically introduced via an atomic force microscope (AFM) tip. We show that by applying an electrostatic potential, the broad defect bound background is suppressed at cryogenic temperatures, resulting in a substantial improvement in single photon purity demonstrated by a 10-fold reduction of the correlation function g(2)(0) value from 0.73 to 0.07. In addition, we see a 2-fold increase in the intensity of the SPEs as well as the ability to activate/deactivate the emitters at certain wavelengths. Finally, we present an increase in the operating temperature of the SPE up to 110 K, a 50 K increase when compared with the results when no electrostatic potential is present.
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Affiliation(s)
| | - Hsun-Jen Chuang
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Matthew R Rosenberger
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Kathleen M McCreary
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Chandriker Kavir Dass
- Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Berend T Jonker
- Materials Science & Technology Division, Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
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30
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Parto K, Azzam SI, Lewis N, Patel SD, Umezawa S, Watanabe K, Taniguchi T, Moody G. Cavity-Enhanced 2D Material Quantum Emitters Deterministically Integrated with Silicon Nitride Microresonators. NANO LETTERS 2022; 22:9748-9756. [PMID: 36318636 PMCID: PMC9756340 DOI: 10.1021/acs.nanolett.2c03151] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 10/26/2022] [Indexed: 05/25/2023]
Abstract
Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition-metal dichalcogenides (TMDs), are an attractive class of single-photon emitters with high brightness, operation up to room temperature, site-specific engineering of emitter arrays with strain and irradiation techniques, and tunability with external electric fields. In this work, we demonstrate a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride microring resonators. Through the Purcell effect, high-purity hBN emitters exhibit a cavity-enhanced spectral coupling efficiency of up to 46% at room temperature, exceeding the theoretical limit (up to 40%) for cavity-free waveguide-emitter coupling and demonstrating nearly a 1 order of magnitude improvement over previous work. The devices are fabricated with a CMOS-compatible process and exhibit no degradation of the 2D material optical properties, robustness to thermal annealing, and 100 nm positioning accuracy of quantum emitters within single-mode waveguides, opening a path for scalable quantum photonic chips with on-demand single-photon sources.
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Affiliation(s)
- K. Parto
- Electrical
and Computer Engineering Department, University
of California, Santa
Barbara, California93106, United States
| | - S. I. Azzam
- Electrical
and Computer Engineering Department, University
of California, Santa
Barbara, California93106, United States
- California
Nanosystems Institute, University of California, Santa Barbara, California93106, United States
| | - N. Lewis
- Electrical
and Computer Engineering Department, University
of California, Santa
Barbara, California93106, United States
| | - S. D. Patel
- Electrical
and Computer Engineering Department, University
of California, Santa
Barbara, California93106, United States
| | - S. Umezawa
- Electrical
and Computer Engineering Department, University
of California, Santa
Barbara, California93106, United States
| | - K. Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - T. Taniguchi
- International
Center for Materials Nanoarchitectures, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - G. Moody
- Electrical
and Computer Engineering Department, University
of California, Santa
Barbara, California93106, United States
- California
Nanosystems Institute, University of California, Santa Barbara, California93106, United States
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31
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Oreszczuk K, Slawinska J, Rodek A, Potemski M, Skierbiszewski C, Kossacki P. Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides. NANOSCALE 2022; 14:17271-17276. [PMID: 36394494 DOI: 10.1039/d2nr03970b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
We demonstrate a novel electroluminescence device in which GaN-based μ-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the μ-LED surface. A special μ-LED design enables the operation of our structures even within the limit of low temperatures. A device equipped with a selected WSe2 monolayer flake is shown to act as a stand-alone, electrically driven single-photon source.
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Affiliation(s)
- Kacper Oreszczuk
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland.
| | - Julia Slawinska
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
| | - Aleksander Rodek
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland.
| | - Marek Potemski
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland.
- Laboratoire National des Champs Magnétiques Intenses, CNRS-UGA-UPS-INSA-EMFL, 25 rue des Martyrs, 38042 Grenoble, France.
| | - Czeslaw Skierbiszewski
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
| | - Piotr Kossacki
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland.
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32
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Hussain N, Ahmed S, Tepe HU, Huang K, Avishan N, He S, Rafique M, Farooq U, Kasirga TS, Bek A, Turan R, Shehzad K, Wu H, Wang Z. Ultra-Narrow Linewidth Photo-Emitters in Polymorphic Selenium Nanoflakes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2204302. [PMID: 36251779 DOI: 10.1002/smll.202204302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Revised: 09/02/2022] [Indexed: 06/16/2023]
Abstract
Photoluminescence (PL) in state-of-the-art 2D materials suffers from narrow spectral coverage, relatively broad linewidths, and poor room-temperature (RT) functionality. The authors report ultra-narrow linewidth photo-emitters (ULPs) across the visible to near-infrared wavelength at RT in polymorphic selenium nanoflakes (SeNFs), synthesized via a hot-pressing strategy. Photo-emitters in NIR exhibit full width at half maximum (Γ) of 330 ± 90 µeV, an order of magnitude narrower than the reported ULPs in 2D materials at 300 K, and decrease to 82 ± 70 µeV at 100 K, with coherence time (τc ) of 21.3 ps. The capping substrate enforced spatial confinement during thermal expansion at 250 °C is believed to trigger a localized crystal symmetry breaking in SeNFs, causing a polymorphic transition from the semiconducting trigonal (t) to quasi-metallic orthorhombic (orth) phase. Fine structure splitting in orth-Se causes degeneracy in defect-associated bright excitons, resulting in ultra-sharp emission. Combined theoretical and experimental findings, an optimal biaxial compressive strain of -0.45% cm-1 in t-Se is uncovered, induced by the coefficient of thermal expansion mismatch at the selenium/sapphire interface, resulting in bandgap widening from 1.74 to 2.23 ± 0.1 eV. This report underpins the underlying correlation between crystal symmetry breaking induced polymorphism and RT ULPs in SeNFs, and their phase change characteristics.
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Affiliation(s)
- Naveed Hussain
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- Department of Electrical Engineering and Computer Science, University of California Irvine, Irvine, CA, 92697, USA
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Shehzad Ahmed
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Hüseyin U Tepe
- Micro and Nano-Technology Program, School of Natural and Applied Sciences, Middle East Technical University, Ankara, 06800, Turkey
| | - Kai Huang
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Nardin Avishan
- Micro and Nano-Technology Program, School of Natural and Applied Sciences, Middle East Technical University, Ankara, 06800, Turkey
| | - ShiJie He
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Mohsin Rafique
- Division of Quantum State of Matter, Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
| | - Umar Farooq
- Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Talip Serkan Kasirga
- Institute of Materials Science and Nanotechnology, Bilkent University UNAM, Ankara, 06800, Turkey
| | - Alpan Bek
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- The Center for Solar Energy Research and Applications (ODTÜ-GÜNAM), Ankara, 06800, Turkey
- Micro and Nano-Technology Program, School of Natural and Applied Sciences, Middle East Technical University, Ankara, 06800, Turkey
| | - Rasit Turan
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- The Center for Solar Energy Research and Applications (ODTÜ-GÜNAM), Ankara, 06800, Turkey
| | - Khurram Shehzad
- Department of Physics, Middle East Technical University, Ankara, 06800, Turkey
- Colleges of ISEE and Microelectronics, ZJU-Hangzhou Global Scientific and Technological Innovation Center, ZJU-UIUC Institute, State Key Labs of Silicon Materials and Modern Optical Instruments, Zhejiang University, Hangzhou, 310058, China
| | - Hui Wu
- Department of Electrical Engineering and Computer Science, University of California Irvine, Irvine, CA, 92697, USA
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054, China
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33
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On-chip generation and dynamic piezo-optomechanical rotation of single photons. Nat Commun 2022; 13:6998. [DOI: 10.1038/s41467-022-34372-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2022] [Accepted: 10/24/2022] [Indexed: 11/17/2022] Open
Abstract
AbstractIntegrated photonic circuits are key components for photonic quantum technologies and for the implementation of chip-based quantum devices. Future applications demand flexible architectures to overcome common limitations of many current devices, for instance the lack of tuneabilty or built-in quantum light sources. Here, we report on a dynamically reconfigurable integrated photonic circuit comprising integrated quantum dots (QDs), a Mach-Zehnder interferometer (MZI) and surface acoustic wave (SAW) transducers directly fabricated on a monolithic semiconductor platform. We demonstrate on-chip single photon generation by the QD and its sub-nanosecond dynamic on-chip control. Two independently applied SAWs piezo-optomechanically rotate the single photon in the MZI or spectrally modulate the QD emission wavelength. In the MZI, SAWs imprint a time-dependent optical phase and modulate the qubit rotation to the output superposition state. This enables dynamic single photon routing with frequencies exceeding one gigahertz. Finally, the combination of the dynamic single photon control and spectral tuning of the QD realizes wavelength multiplexing of the input photon state and demultiplexing it at the output. Our approach is scalable to multi-component integrated quantum photonic circuits and is compatible with hybrid photonic architectures and other key components for instance photonic resonators or on-chip detectors.
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34
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Room-temperature electrical control of polarization and emission angle in a cavity-integrated 2D pulsed LED. Nat Commun 2022; 13:4884. [PMID: 35985999 PMCID: PMC9391484 DOI: 10.1038/s41467-022-32292-2] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Accepted: 07/25/2022] [Indexed: 11/08/2022] Open
Abstract
Devices based on two-dimensional (2D) semiconductors hold promise for the realization of compact and versatile on-chip interconnects between electrical and optical signals. Although light emitting diodes (LEDs) are fundamental building blocks for integrated photonics, the fabrication of light sources made of bulk materials on complementary metal-oxide-semiconductor (CMOS) circuits is challenging. While LEDs based on van der Waals heterostructures have been realized, the control of the emission properties necessary for information processing remains limited. Here, we show room-temperature electrical control of the location, directionality and polarization of light emitted from a 2D LED operating at MHz frequencies. We integrate the LED in a planar cavity to couple the polariton emission angle and polarization to the in-plane exciton momentum, controlled by a lateral voltage. These findings demonstrate the potential of TMDCs as fast, compact and tunable light sources, promising for the realization of electrically driven polariton lasers. 2D semiconductors offer a promising platform for the realization of compact and CMOS-compatible optoelectronic components. Here, the authors report the realization of light-emitting diodes based on 2D WSe2 integrated with a planar cavity, showing the electrical control of the emission angle and polarization at room temperature.
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35
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Cui X, Du M, Das S, Yoon HH, Pelgrin VY, Li D, Sun Z. On-chip photonics and optoelectronics with a van der Waals material dielectric platform. NANOSCALE 2022; 14:9459-9465. [PMID: 35735657 PMCID: PMC9261272 DOI: 10.1039/d2nr01042a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/22/2022] [Accepted: 05/29/2022] [Indexed: 06/15/2023]
Abstract
During the last few decades, photonic integrated circuits have increased dramatically, facilitating many high-performance applications, such as on-chip sensing, data processing, and inter-chip communications. The currently dominating material platforms (i.e., silicon, silicon nitride, lithium niobate, and indium phosphide), which have exhibited great application successes, however, suffer from their own disadvantages, such as the indirect bandgap of silicon for efficient light emission, and the compatibility challenges of indium phosphide with the silicon industry. Here, we report a new dielectric platform using nanostructured bulk van der Waals materials. On-chip light propagation, emission, and detection are demonstrated by taking advantage of different van der Waals materials. Low-loss passive waveguides with MoS2 and on-chip light sources and photodetectors with InSe have been realised. Our proof-of-concept demonstration of passive and active on-chip photonic components endorses van der Waals materials for offering a new dielectric platform with a large material-selection degree of freedom and unique properties toward close-to-atomic scale manufacture of on-chip photonic and optoelectronic devices.
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Affiliation(s)
- Xiaoqi Cui
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Mingde Du
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
| | - Susobhan Das
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
| | - Hoon Hahn Yoon
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Vincent Yves Pelgrin
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
| | - Diao Li
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Espoo FI-02150, Finland.
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
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36
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Radiative pattern of intralayer and interlayer excitons in two-dimensional WS 2/WSe 2 heterostructure. Sci Rep 2022; 12:6939. [PMID: 35484181 PMCID: PMC9050751 DOI: 10.1038/s41598-022-10851-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2021] [Accepted: 04/04/2022] [Indexed: 12/04/2022] Open
Abstract
Two-dimensional (2D) heterostructures (HS) formed by transition-metal dichalcogenide (TMDC) monolayers offer a unique platform for the study of intralayer and interlayer excitons as well as moiré-pattern-induced features. Particularly, the dipolar charge-transfer exciton comprising an electron and a hole, which are confined to separate layers of 2D semiconductors and Coulomb-bound across the heterojunction interface, has drawn considerable attention in the research community. On the one hand, it bears significance for optoelectronic devices, e.g. in terms of charge carrier extraction from photovoltaic devices. On the other hand, its spatially indirect nature and correspondingly high longevity among excitons as well as its out-of-plane dipole orientation render it attractive for excitonic Bose–Einstein condensation studies, which address collective coherence effects, and for photonic integration schemes with TMDCs. Here, we demonstrate the interlayer excitons’ out-of-plane dipole orientation through angle-resolved spectroscopy of the HS photoluminescence at cryogenic temperatures, employing a tungsten-based TMDC HS. Within the measurable light cone, the directly-obtained radiation profile of this species clearly resembles that of an in-plane emitter which deviates from that of the intralayer bright excitons as well as the other excitonic HS features recently attributed to artificial superlattices formed by moiré patterns.
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37
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Titze M, Byeon H, Flores A, Henshaw J, Harris CT, Mounce AM, Bielejec ES. In Situ Ion Counting for Improved Implanted Ion Error Rate and Silicon Vacancy Yield Uncertainty. NANO LETTERS 2022; 22:3212-3218. [PMID: 35426685 DOI: 10.1021/acs.nanolett.1c04646] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
An in situ counted ion implantation experiment improving the error on the number of ions required to form a single optically active silicon vacancy (SiV) defect in diamond 7-fold compared to timed implantation is presented. Traditional timed implantation relies on a beam current measurement followed by implantation with a preset pulse duration. It is dominated by Poisson statistics, resulting in large errors for low ion numbers. Instead, our in situ detection, measuring the ion number arriving at the substrate, results in a 2-fold improvement of the error on the ion number required to generate a single SiV compared to timed implantation. Through postimplantation analysis, the error is improved 7-fold compared to timed implantation. SiVs are detected by photoluminescence spectroscopy, and the yield of 2.98% is calculated through the photoluminescence count rate. Hanbury-Brown-Twiss interferometry is performed on locations potentially hosting single-photon emitters, confirming that 82% of the locations exhibit single photon emission statistics.
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Affiliation(s)
- Michael Titze
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Heejun Byeon
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Anthony Flores
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Jacob Henshaw
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - C Thomas Harris
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Andrew M Mounce
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Edward S Bielejec
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
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38
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Ghosh Dastidar M, Thekkooden I, Nayak PK, Praveen Bhallamudi V. Quantum emitters and detectors based on 2D van der Waals materials. NANOSCALE 2022; 14:5289-5313. [PMID: 35322836 DOI: 10.1039/d1nr08193d] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Light plays an essential role in our world, with several technologies relying on it. Photons will also play an important role in the emerging quantum technologies, which are primed to have a transformative effect on our society. The development of single-photon sources and ultra-sensitive photon detectors is crucial. Solid-state emitters are being heavily pursued for developing truly single-photon sources for scalable technology. On the detectors' side, the main challenge lies in inventing sensitive detectors operating at sub-optical frequencies. This review highlights the promising research being conducted for the development of quantum emitters and detectors based on two-dimensional van der Waals (2D-vdW) materials. Several 2D-vdW materials, from canonical graphene to transition metal dichalcogenides and their heterostructures, have generated a lot of excitement due to their tunable emission and detection properties. The recent developments in the creation, fabrication and control of quantum emitters hosted by 2D-vdW materials and their potential applications in integrated photonic devices are discussed. Furthermore, the progress in enhancing the photon-counting potential of 2D material-based detectors, viz. 2D photodetectors, bolometers and superconducting single-photon detectors functioning at various wavelengths is also reported.
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Affiliation(s)
- Madhura Ghosh Dastidar
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
| | - Immanuel Thekkooden
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India
| | - Pramoda K Nayak
- 2D Materials Research and Innovation Group, Micro Nano and Bio-Fluidics Group, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India.
| | - Vidya Praveen Bhallamudi
- Quantum Centers in Diamond and Emerging Materials (QuCenDiEM) Group, Departments of Physics and Electrical Engineering, Indian Institute of Technology Madras, Chennai 600036, India.
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39
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Du B, Li Y, Jiang M, Zhang H, Wu L, Wen W, Liu Z, Fang Z, Yu T. Polarization-Dependent Purcell Enhancement on a Two-Dimensional h-BN/WS 2 Light Emitter with a Dielectric Plasmonic Nanocavity. NANO LETTERS 2022; 22:1649-1655. [PMID: 35107290 DOI: 10.1021/acs.nanolett.1c04640] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Integrating two-dimensional (2D) transition-metal dichalcogenides (TMDCs) into dielectric plasmonic nanostructures enables the miniaturization of on-chip nanophotonic devices. Here we report on a high-quality light emitter based on the newly designed 2D h-BN/WS2 heterostructure integrated with an array of TiO2 nanostripes. Different from a traditional strongly coupled system such as the TMDCs/metallic plasmonic nanostructure, we first employ dielectric nanocavities and achieve a Purcell enhancement on the nanoscale at room temperature. Furthermore, we demonstrate that the light emission strength can be effectively controlled by tuning the polarization configuration. Such a polarization dependence meanwhile could be proof of the resonant energy transfer theory of dipole-dipole coupling between TMDCs and a dielectric nanostructure. This work gains experimental and simulated insights into modified spontaneous emission with dielectric nanoplasmonic platforms, presenting a promising route toward practical applications of 2D semiconducting photonic emitters on a silica-based chip.
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Affiliation(s)
- Bowen Du
- School of Physics Science and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Division of Physics and Applied Physics, School of Physics and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yu Li
- School of Physics, State Key Lab for Mesoscopic Physics, Peking University, Beijing 100871, People's Republic of China
| | - Meiling Jiang
- School of Physics, State Key Lab for Mesoscopic Physics, Peking University, Beijing 100871, People's Republic of China
| | - Hongbo Zhang
- Division of Physics and Applied Physics, School of Physics and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Lishu Wu
- Division of Physics and Applied Physics, School of Physics and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Wen Wen
- Division of Physics and Applied Physics, School of Physics and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| | - Zheyu Fang
- School of Physics, State Key Lab for Mesoscopic Physics, Peking University, Beijing 100871, People's Republic of China
| | - Ting Yu
- School of Physics Science and Technology, Wuhan University, Wuhan 430072, People's Republic of China
- Division of Physics and Applied Physics, School of Physics and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
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40
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Jin T, Li X, Liu R, Ou W, Zhu Y, Wang X, Liu J, Huo Y, Ou X, Zhang J. Generation of Polarization-Entangled Photons from Self-Assembled Quantum Dots in a Hybrid Quantum Photonic Chip. NANO LETTERS 2022; 22:586-593. [PMID: 35025517 DOI: 10.1021/acs.nanolett.1c03226] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Integration of entangled photon sources in a quantum photonic chip has enabled the most envisioned quantum photonic technologies to be performed in a compact platform with enhanced complexity and stability as compared to bulk optics. However, the technology to generate entangled photon states in a quantum photonic chip that are neither probabilistic nor restricted to low efficiency is still missing. Here, we introduce a hybrid quantum photonic chip where waveguide-coupled self-assembled quantum dots (QDs) are heterogeneously integrated onto a piezoelectric actuator. By exerting an anisotropic stress, we experimentally show that the fine structure splitting of waveguide-coupled quantum dots can be effectively eliminated. This allows for the demonstration of chip-integrated self-assembled QDs for generating and routing polarization-entangled photon pairs. Our results presented here would open up an avenue for implementing on-demand quantum information processing in a quantum photonic chip by employing all-solid-state self-assembled quantum dot emitters.
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Affiliation(s)
- Tingting Jin
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xueshi Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China
| | - Runze Liu
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Shanghai Branch, CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Shanghai 201315, China
| | - Weiwen Ou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yifan Zhu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xudong Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jin Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, China
| | - Yongheng Huo
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Shanghai Branch, CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics, University of Science and Technology of China, Shanghai 201315, China
- Hefei National Laboratory for Physical Sciences at Microscale and Department of Engineering and Applied Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xin Ou
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jiaxiang Zhang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200092, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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41
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All-Optical Modulation Technology Based on 2D Layered Materials. MICROMACHINES 2022; 13:mi13010092. [PMID: 35056256 PMCID: PMC8780208 DOI: 10.3390/mi13010092] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/23/2021] [Revised: 12/07/2021] [Accepted: 12/16/2021] [Indexed: 02/01/2023]
Abstract
In the advancement of photonics technologies, all-optical systems are highly demanded in ultrafast photonics, signal processing, optical sensing and optical communication systems. All-optical devices are the core elements to realize the next generation of photonics integration system and optical interconnection. Thus, the exploration of new optoelectronics materials that exhibit different optical properties is a highlighted research direction. The emerging two-dimensional (2D) materials such as graphene, black phosphorus (BP), transition metal dichalcogenides (TMDs) and MXene have proved great potential in the evolution of photonics technologies. The optical properties of 2D materials comprising the energy bandgap, third-order nonlinearity, nonlinear absorption and thermo-optics coefficient can be tailored for different optical applications. Over the past decade, the explorations of 2D materials in photonics applications have extended to all-optical modulators, all-optical switches, an all-optical wavelength converter, covering the visible, near-infrared and Terahertz wavelength range. Herein, we review different types of 2D materials, their fabrication processes and optical properties. In addition, we also summarize the recent advances of all-optical modulation based on 2D materials. Finally, we conclude on the perspectives on and challenges of the future development of the 2D material-based all-optical devices.
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42
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Senichev A, Martin ZO, Peana S, Sychev D, Xu X, Lagutchev AS, Boltasseva A, Shalaev VM. Room-temperature single-photon emitters in silicon nitride. SCIENCE ADVANCES 2021; 7:eabj0627. [PMID: 34890236 PMCID: PMC8664256 DOI: 10.1126/sciadv.abj0627] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Single-photon emitters are essential in enabling several emerging applications in quantum information technology, quantum sensing, and quantum communication. Scalable photonic platforms capable of hosting intrinsic or embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. Photophysical analysis reveals bright (>105 counts/s), stable, linearly polarized, and pure quantum emitters in SiN films with a second-order autocorrelation function value at zero time delay g(2)(0) below 0.2 at room temperature. We suggest that the emission originates from a specific defect center in SiN because of the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in SiN have the potential to enable direct, scalable, and low-loss integration of quantum light sources with a well-established photonic on-chip platform.
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Affiliation(s)
- Alexander Senichev
- School of Electrical and Computer Engineering, Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN 47906, USA
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge, TN 37931, USA
| | - Zachariah O Martin
- School of Electrical and Computer Engineering, Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN 47906, USA
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge, TN 37931, USA
| | - Samuel Peana
- School of Electrical and Computer Engineering, Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN 47906, USA
| | - Demid Sychev
- School of Electrical and Computer Engineering, Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN 47906, USA
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge, TN 37931, USA
| | - Xiaohui Xu
- School of Electrical and Computer Engineering, Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN 47906, USA
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge, TN 37931, USA
- School of Materials Engineering, Purdue University, West Lafayette, IN 47906, USA
| | - Alexei S Lagutchev
- School of Electrical and Computer Engineering, Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN 47906, USA
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge, TN 37931, USA
| | - Alexandra Boltasseva
- School of Electrical and Computer Engineering, Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN 47906, USA
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge, TN 37931, USA
| | - Vladimir M Shalaev
- School of Electrical and Computer Engineering, Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN 47906, USA
- The Quantum Science Center (QSC), a National Quantum Information Science Research Center of the U.S. Department of Energy (DOE), Oak Ridge, TN 37931, USA
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43
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So JP, Kim HR, Baek H, Jeong KY, Lee HC, Huh W, Kim YS, Watanabe K, Taniguchi T, Kim J, Lee CH, Park HG. Electrically driven strain-induced deterministic single-photon emitters in a van der Waals heterostructure. SCIENCE ADVANCES 2021; 7:eabj3176. [PMID: 34669464 PMCID: PMC8528413 DOI: 10.1126/sciadv.abj3176] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
Quantum confinement in transition metal dichalcogenides (TMDCs) enables the realization of deterministic single-photon emitters. The position and polarization control of single photons have been achieved via local strain engineering using nanostructures. However, most existing TMDC-based emitters are operated by optical pumping, while the emission sites in electrically pumped emitters are uncontrolled. Here, we demonstrate electrically driven single-photon emitters located at the positions where strains are induced by atomic force microscope indentation on a van der Waals heterostructure consisting of graphene, hexagonal boron nitride, and tungsten diselenide. The optical, electrical, and mechanical properties induced by the local strain gradient were systematically analyzed. The emission at the indentation sites exhibits photon antibunching behavior with a g(2)(0) value of ~0.3, intensity saturation, and a linearly cross-polarized doublet, at 4 kelvin. This robust spatial control of electrically driven single-photon emitters will pave the way for the practical implementation of integrated quantum light sources.
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Affiliation(s)
- Jae-Pil So
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Ha-Reem Kim
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Hyeonjun Baek
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
- Center for Quantum Information, Korea Institute of Science and Technology, Seoul 02841, Republic of Korea
| | - Kwang-Yong Jeong
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Hoo-Cheol Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Woong Huh
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Yoon Seok Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Jungkil Kim
- Department of Physics, Jeju National University, Jeju 63243, Republic of Korea
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 02841, Republic of Korea
- Corresponding author.
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44
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Bright single photon emitters with enhanced quantum efficiency in a two-dimensional semiconductor coupled with dielectric nano-antennas. Nat Commun 2021; 12:6063. [PMID: 34663795 PMCID: PMC8523570 DOI: 10.1038/s41467-021-26262-3] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2021] [Accepted: 09/27/2021] [Indexed: 11/08/2022] Open
Abstract
Single photon emitters in atomically-thin semiconductors can be deterministically positioned using strain induced by underlying nano-structures. Here, we couple monolayer WSe2 to high-refractive-index gallium phosphide dielectric nano-antennas providing both optical enhancement and monolayer deformation. For single photon emitters formed on such nano-antennas, we find very low (femto-Joule) saturation pulse energies and up to 104 times brighter photoluminescence than in WSe2 placed on low-refractive-index SiO2 pillars. We show that the key to these observations is the increase on average by a factor of 5 of the quantum efficiency of the emitters coupled to the nano-antennas. This further allows us to gain new insights into their photoluminescence dynamics, revealing the roles of the dark exciton reservoir and Auger processes. We also find that the coherence time of such emitters is limited by intrinsic dephasing processes. Our work establishes dielectric nano-antennas as a platform for high-efficiency quantum light generation in monolayer semiconductors. Single photon emitters (SPEs) in 2D semiconductors can be deterministically positioned using localized strain induced by underlying nanostructures. Here, the authors show SPE coupling in WSe2 to GaP dielectric nanoantennas, substantially increasing quantum efficiency and photoluminescence brightness.
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45
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Wang Q, Maisch J, Tang F, Zhao D, Yang S, Joos R, Portalupi SL, Michler P, Smet JH. Highly Polarized Single Photons from Strain-Induced Quasi-1D Localized Excitons in WSe 2. NANO LETTERS 2021; 21:7175-7182. [PMID: 34424710 PMCID: PMC8431731 DOI: 10.1021/acs.nanolett.1c01927] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 08/13/2021] [Indexed: 05/31/2023]
Abstract
Single photon emission from localized excitons in two-dimensional (2D) materials has been extensively investigated because of its relevance for quantum information applications. Prerequisites are the availability of photons with high purity polarization and controllable polarization orientation that can be integrated with optical cavities. Here, deformation strain along edges of prepatterned square-shaped substrate protrusions is exploited to induce quasi-one-dimensional (1D) localized excitons in WSe2 monolayers as an elegant way to get photons that fulfill these requirements. At zero magnetic field, the emission is linearly polarized with 95% purity because exciton states are valley hybridized with equal shares of both valleys and predominant emission from excitons with a dipole moment along the elongated direction. In a strong field, one valley is favored and the linear polarization is converted to high-purity circular polarization. This deterministic control over polarization purity and orientation is a valuable asset in the context of integrated quantum photonics.
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Affiliation(s)
- Qixing Wang
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Julian Maisch
- Institut
für Halbleiteroptik und Funktionelle Grenzflächen, Center
for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart D-70569, Germany
| | - Fangdong Tang
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Dong Zhao
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Sheng Yang
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
| | - Raphael Joos
- Institut
für Halbleiteroptik und Funktionelle Grenzflächen, Center
for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart D-70569, Germany
| | - Simone Luca Portalupi
- Institut
für Halbleiteroptik und Funktionelle Grenzflächen, Center
for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart D-70569, Germany
| | - Peter Michler
- Institut
für Halbleiteroptik und Funktionelle Grenzflächen, Center
for Integrated Quantum Science and Technology (IQST) and SCoPE, University of Stuttgart, Stuttgart D-70569, Germany
| | - Jurgen H. Smet
- Max
Planck Institute for Solid State Research, Stuttgart D-70569, Germany
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46
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Anantharaman SB, Jo K, Jariwala D. Exciton-Photonics: From Fundamental Science to Applications. ACS NANO 2021; 15:12628-12654. [PMID: 34310122 DOI: 10.1021/acsnano.1c02204] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Semiconductors in all dimensionalities ranging from 0D quantum dots and molecules to 3D bulk crystals support bound electron-hole pair quasiparticles termed excitons. Over the past two decades, the emergence of a variety of low-dimensional semiconductors that support excitons combined with advances in nano-optics and photonics has burgeoned an advanced area of research that focuses on engineering, imaging, and modulating the coupling between excitons and photons, resulting in the formation of hybrid quasiparticles termed exciton-polaritons. This advanced area has the potential to bring about a paradigm shift in quantum optics, as well as classical optoelectronic devices. Here, we present a review on the coupling of light in excitonic semiconductors and previous investigations of the optical properties of these hybrid quasiparticles via both far-field and near-field imaging and spectroscopy techniques. Special emphasis is given to recent advances with critical evaluation of the bottlenecks that plague various materials toward practical device implementations including quantum light sources. Our review highlights a growing need for excitonic material development together with optical engineering and imaging techniques to harness the utility of excitons and their host materials for a variety of applications.
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Affiliation(s)
- Surendra B Anantharaman
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Kiyoung Jo
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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47
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Fröch JE, Spencer LP, Kianinia M, Totonjian DD, Nguyen M, Gottscholl A, Dyakonov V, Toth M, Kim S, Aharonovich I. Coupling Spin Defects in Hexagonal Boron Nitride to Monolithic Bullseye Cavities. NANO LETTERS 2021; 21:6549-6555. [PMID: 34288695 DOI: 10.1021/acs.nanolett.1c01843] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block for quantum photonic applications. Herein, we demonstrate the efficient coupling of recently discovered spin defects in hBN to purposely designed bullseye cavities. We show that boron vacancy spin defects couple to the monolithic hBN cavity system and exhibit a 6.5-fold enhancement. In addition, by comparative finite-difference time-domain modeling, we shed light on the emission dipole orientation, which has not been experimentally demonstrated at this point. Beyond that, the coupled spin system exhibits an enhanced contrast in optically detected magnetic resonance readout and improved signal-to-noise ratio. Thus, our experimental results, supported by simulations, constitute a first step toward integration of hBN spin defects with photonic resonators for a scalable spin-photon interface.
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Affiliation(s)
- Johannes E Fröch
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Lesley P Spencer
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Daniel D Totonjian
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Minh Nguyen
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Andreas Gottscholl
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Vladimir Dyakonov
- Experimental Physics 6 and Würzburg-Dresden Cluster of Excellence ct.qmat, Julius Maximilian University of Würzburg, 97074 Würzburg, Germany
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
| | - Sejeong Kim
- Department of Electrical and Electronic Engineering, University of Melbourne, Victoria 3010, Australia
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), University of Technology Sydney, Ultimo, New South Wales 2007, Australia
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48
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Guimbao J, Weituschat LM, Llorens Montolio JM, Postigo PA. Enhancement of the indistinguishability of single photon emitters coupled to photonic waveguides. OPTICS EXPRESS 2021; 29:21160-21173. [PMID: 34265908 DOI: 10.1364/oe.422023] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2021] [Accepted: 06/09/2021] [Indexed: 06/13/2023]
Abstract
One of the main steps towards large-scale quantum photonics consists of the integration of single photon sources (SPS) with photonic integrated circuits (PICs). For that purpose, the PICs should offer an efficient light coupling and a high preservation of the indistinguishability of photons. Therefore, optimization of the indistinguishability through waveguide design is especially relevant. In this work we have developed an analytical model that uses the Green's Dyadic of a 3D unbounded rectangular waveguide to calculate the coupling and the indistinguishability of an ideal point-source quantum emitter coupled to a photonic waveguide depending on its orientation and position. The model has been numerically evaluated through finite-difference time-domain (FDTD) simulations showing consistent results. The maximum coupling is achieved when the emitter is embedded in the center of the waveguide but somewhat surprisingly the maximum indistinguishability appears when the emitter is placed at the edge of the waveguide where the electric field is stronger due to the surface discontinuity.
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49
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Defect and strain engineering of monolayer WSe 2 enables site-controlled single-photon emission up to 150 K. Nat Commun 2021; 12:3585. [PMID: 34117243 PMCID: PMC8196156 DOI: 10.1038/s41467-021-23709-5] [Citation(s) in RCA: 63] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/17/2020] [Accepted: 05/11/2021] [Indexed: 11/25/2022] Open
Abstract
In recent years, quantum-dot-like single-photon emitters in atomically thin van der Waals materials have become a promising platform for future on-chip scalable quantum light sources with unique advantages over existing technologies, notably the potential for site-specific engineering. However, the required cryogenic temperatures for the functionality of these sources has been an inhibitor of their full potential. Existing methods to create emitters in 2D materials face fundamental challenges in extending the working temperature while maintaining the emitter’s fabrication yield and purity. In this work, we demonstrate a method of creating site-controlled single-photon emitters in atomically thin WSe2 with high yield utilizing independent and simultaneous strain engineering via nanoscale stressors and defect engineering via electron-beam irradiation. Many of the emitters exhibit biexciton cascaded emission, single-photon purities above 95%, and working temperatures up to 150 K. This methodology, coupled with possible plasmonic or optical micro-cavity integration, furthers the realization of scalable, room-temperature, and high-quality 2D single- and entangled-photon sources. Quantum defects in 2D semiconductors are promising quantum light sources, but the required cryogenic temperatures limit their applicability. Here, the authors report a method to create single-photon emitters in monolayer WSe2 operating at temperatures up to 150 K without plasmonic or optical cavities.
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50
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Shaik ABDAJWI, Palla P. Optical quantum technologies with hexagonal boron nitride single photon sources. Sci Rep 2021; 11:12285. [PMID: 34112837 PMCID: PMC8192930 DOI: 10.1038/s41598-021-90804-4] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2020] [Accepted: 05/11/2021] [Indexed: 02/05/2023] Open
Abstract
Single photon quantum emitters are important building blocks of optical quantum technologies. Hexagonal boron nitride (hBN), an atomically thin wide band gap two dimensional material, hosts robust, optically active luminescent point defects, which are known to reduce phonon lifetimes, promises as a stable single-photon source at room temperature. In this Review, we present the recent advances in hBN quantum light emission, comparisons with other 2D material based quantum sources and analyze the performance of hBN quantum emitters. We also discuss state-of-the-art stable single photon emitter's fabrication in UV, visible and near IR regions, their activation, characterization techniques, photostability towards a wide range of operating temperatures and harsh environments, Density-functional theory predictions of possible hBN defect structures for single photon emission in UV to IR regions and applications of single photon sources in quantum communication and quantum photonic circuits with associated potential obstacles.
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Affiliation(s)
- Akbar Basha Dhu-Al-Jalali-Wal-Ikram Shaik
- Center for Nanotechnology Research & Department of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology (VIT), Vellore, Tamil Nadu, 632014, India
| | - Penchalaiah Palla
- Center for Nanotechnology Research & Department of Micro and Nanoelectronics, School of Electronics Engineering, Vellore Institute of Technology (VIT), Vellore, Tamil Nadu, 632014, India.
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