Plasmonic monolithic lithium niobate directional coupler switches

Ultraconfined Plasmons in Atomically Thin Crystalline Silver Nanostructures

The ability to confine light down to atomic scales is critical for the development of applications in optoelectronics and optical sensing as well as for the exploration of nanoscale quantum phenomena. Plasmons in metallic nanostructures with just a few atomic layers in thickness can achieve this type of confinement, although fabrication imperfections down to the subnanometer scale hinder actual developments. Here, narrow plasmons are demonstrated in atomically thin crystalline silver nanostructures fabricated by prepatterning silicon substrates and epitaxially depositing silver films of just a few atomic layers in thickness. Specifically, a silicon wafer is lithographically patterned to introduce on-demand lateral shapes, chemically process the sample to obtain an atomically flat silicon surface, and epitaxially deposit silver to obtain ultrathin crystalline metal films with the designated morphologies. Structures fabricated by following this procedure allow for an unprecedented control over optical field confinement in the near-infrared spectral region, which is here illustrated by the observation of fundamental and higher-order plasmons featuring extreme spatial confinement and high-quality factors that reflect the crystallinity of the metal. The present study constitutes a substantial improvement in the degree of spatial confinement and quality factor that should facilitate the design and exploitation of atomic-scale nanoplasmonic devices for optoelectronics, sensing, and quantum-physics applications.

Compact lithium niobate plasmonic modulator

Lithium niobate (LN)-based modulators offer superior modulation performances, including high-speed modulation, linearity, and temperature stability. However, these devices exhibit larger sizes due to the low light-matter interaction despite a significant electro-optic coefficient. In this work, we present a compact LN-based modulator using a plasmonic mode that confines the optical mode in a very narrow gap. By filling the gap with LN, the confinement factor in the LN is significantly enhanced. The proposed modulator provides an extremely small half-wave voltage-length product, VπL of 0.02 V/cm at an optical communication wavelength (λ = 1.55 µm). The proposed modulator scheme can be utilized in a wide range of optical communication devices that demand small footprints and a high-speed operation.

Near-Field Observation of the Photonic Spin Hall Effect

The photonic spin Hall effect, referring to the spatial separation of photons with opposite spins due to spin-orbit interactions, has enabled potential for various spin-sensitive applications and devices. Here, using scattering-type near-field scanning optical microscopy, we observe spin-orbit interactions introduced by a subwavelength semiring antenna integrated in a plasmonic circuit. Clear evidence of unidirectional excitation of surface plasmon polaritons is obtained by direct comparison of the amplitude- and phase-resolved near-field maps of the plasmonic nanocircuit under excitation with photons of opposite spin states coupled to a plasmonic nanoantenna. We present details of the antenna design and experimental methods to investigate the spatial variation of complex electromagnetic fields in a spin-sensitive plasmonic circuit. The reported findings offer valuable insights into the generation, characterization, and application of the photonic spin Hall effect in photonic integrated circuits for future and emerging spin-selective nanophotonic systems.

Ultracompact, high-extinction ratio XOR, OR, and Feynman logic gates based on plasmonic metal-insulator-metal directional couplers

Three plasmonic logic gates including XOR, OR, and Feynman based on directional couplers operating in the optical communications band are proposed. First, a 3 dB directional coupler based on metal-insulator-metal waveguides is presented and its operation principles are investigated using the coupled mode theory method. Then, XOR and OR logic gates are implemented simultaneously in one structure. The simulations performed by the finite-difference time-domain method show that the extinction ratios for the OR and XOR gates are infinite and 29.3 dB, respectively. The Feynman gate is also implemented using two directional couplers placed parallel to each other. The ER values for outputs P and Q are 7.26 dB and 34.23 dB, respectively. The footprints of the XOR/OR and Feynman structures are less than 8µm ² and 12µm ², respectively. The presented gates have a high potential to be used in photonic integrated circuits.

Low Power Consuming Mode Switch Based on Hybrid-Core Vertical Directional Couplers with Graphene Electrode-Embedded Polymer Waveguides

We propose a mode switch based on hybrid-core vertical directional couplers with an embedded graphene electrode to realize the switching function with low power consumption. We designed the device with Norland Optical Adhesive (NOA) material as the guide wave cores and epoxy polymer material as cladding to achieve a thermo-optic switching for the E₁₁, E₂₁ and E₁₂ modes, where monolayer graphene served as electrode heaters. The device, with a length of 21 mm, had extinction ratios (ERs) of 20.5 dB, 10.4 dB and 15.7 dB for the E₂₁, E₁₂ and E₁₁ modes, respectively, over the C-band. The power consumptions of three electric heaters were reduced to only 3.19 mW, 3.09 mW and 2.97 mW, respectively, and the response times were less than 495 µs, 486 µs and 498 µs. Additionally, we applied such a device into a mode division multiplexing (MDM) transmission system to achieve an application of gain equalization of few-mode amplification among guided modes. The differential modal gain (DMG) could be optimized from 5.39 dB to 0.92 dB over the C-band, together with the characteristic of polarization insensitivity. The proposed mode switch can be further developed to switch or manipulate the attenuation of the arbitrary guided mode arising in the few-mode waveguide.

Tunable Light Field Modulations with Chip- and Fiber-Compatible Monolithic Dielectric Metasurfaces

Metasurfaces with a high engineering degree of freedom are promising building blocks for applications in metalenses, beam deflectors, metaholograms, sensing, and many others. Though the fundamental and technological challenges, proposing tunable metasurfaces is still possible. Previous efforts in this field are mainly taken on designing sophisticated structures with active materials introduced. Here, we present a generic kind of monolithic dielectric metasurfaces for tunable light field modulations. Changes in the period number and surrounding refractive index enable discrete and continuous modulations of spatial light fields, respectively. We exemplify this concept in monolithic Lithium Niobate metasurfaces for tunable metalenses and beam deflectors. The utilization of monolithic dielectric materials facilitates the ready integration of the metasurfaces with both chip and optical fiber platforms. This concept is not limited by the availability of active materials or expensive and time-consuming fabrication techniques, which can be applied to any transparent dielectric materials and various optical platforms.

Ultracompact topological photonic switch based on valley-vortex-enhanced high-efficiency phase shift

Topologically protected edge states based on valley photonic crystals (VPCs) have been widely studied, from theoretical verification to technical applications. However, research on integrated tuneable topological devices is still lacking. Here, we study the phase-shifting theory of topological edge modes based on a VPC structure. Benefiting from the phase vortex formed by the VPC structure, the optical path of the topological edge mode in the propagation direction is approximately two-fold that of the conventional optical mode in a strip waveguide. In experiments, we show a 1.57-fold improvement in π-phase tuning efficiency. By leveraging the high-efficiency phase-shifting properties and the sharp-turn features of the topological waveguide, we demonstrate an ultracompact 1 × 2 thermo-optic topological switch (TOTS) operating at telecommunication wavelengths. A switching power of 18.2 mW is needed with an ultracompact device footprint of 25.66 × 28.3 μm in the wavelength range of 1530-1582 nm. To the best of our knowledge, this topological photonic switch is the smallest switch of any dielectric or semiconductor 1 × 2/2 × 2 broadband optical switches, including thermo-optic and electro-optic switches. In addition, a high-speed transmission experiment employing the proposed TOTS is carried out to demonstrate the robust transmission of high-speed data. Our work reveals the phase-shifting mechanism of valley edge modes, which may enable diverse topological functional devices in many fields, such as optical communications, nanophotonics, and quantum information processing.

Plasmonic Lithium Niobate Mach-Zehnder Modulators

Lithium niobate Mach-Zehnder modulators (MZMs) are present in a wide range of technologies and though fulfilling the performance and reliability requirements of present applications, they are becoming progressively too bulky, power inefficient, and slow in switching to keep pace with future technological demands. Here, we utilize plasmonics to demonstrate the most efficient (V_πL = 0.23 Vcm) lithium niobate MZM to date, consisting of gold nanostripes on lithium niobate that guide both plasmonic modes and electrical signals that control their relative optical phase delay, thereby enabling efficient electro-optic modulation. For high linearity (modulation depth of >2 dB), the proposed MZM inherently operates near its quadrature point by shifting the relative phase of the signal in the interferometric arms. The demonstrated lithium niobate MZM manifests the benefits of employing plasmonics for applications that demand compact (<1 mm²) and fast (>10 GHz) photonic components operating reliably at ambient temperatures.

Electro-optic metasurface-based free-space modulators

Research in optical metasurfaces has explosively grown in recent years, primarily due to their ability of exercising complete control over the transmitted and reflected fields. Application prospects in many emerging technologies require this control to become dynamic, so that the metasurface response could be tuned with external stimuli. In this work, electrically tunable optical metasurfaces operating in reflection as optical free-space modulators are demonstrated. The intensity modulation is achieved by exploiting the electro-optic Pockels effect and tuning the Fabry-Perot resonance in a 320 nm-thick lithium niobate (LN) film sandwiched between a continuous thick gold film and an array of gold nanostripes, serving also as control electrodes. The proposed compact (<1000 μm²) modulators operate in the wavelength range of 900-1000 nm, featuring a maximum intensity modulation depth of ∼20% at the driving voltage of ± 10 V within the bandwidth of 8.0 MHz (with the potential bandwidth of ∼25 GHz). By arranging a 2 × 2 array of individually addressable modulators, space-variant control of light reflection is demonstrated, therefore opening a way towards the realization of inertia-free, ultrafast, and robust spatial light modulators based on tunable LN flat optics components.

Efficient multi-step coupling between Si3N4 waveguides and CMOS plasmonic ferroelectric phase shifters in the O-band

In this paper we present a thorough simulation-based analysis for the design of multi-step couplers bridging seamlessly plasmonic barium titanate oxide (BTO) ferroelectric phase shifters and thick silicon nitride (Si₃N₄) waveguides for the O-band. The targeted plasmonic waveguides are a hybrid plasmonic waveguide (HPW) providing low propagation losses and a plasmonic metal-insulator-metal (MIM) slot waveguide offering a high confinement factor for high modulation efficiency. The proposed plasmonic platforms are formed by Copper (Cu) providing CMOS compatibility. The analysis is based on 2D-FD eigenvalue and 3D-FDTD numerical simulations targeting to identify the optimum geometries ensuring the lowest coupling losses, calculated as 1.75dB for the HPW geometry and 1.29dB for the MIM configuration. The corresponding confinement factors are 31.39% and 56.2% for the HPW and MIM waveguides, respectively.

Single-Mode Emission in InP Microdisks on Si Using Au Antenna

An important building block for on-chip photonic applications is a scaled emitter. Whispering gallery mode cavities based on III-Vs on Si allow for small device footprints and lasing with low thresholds. However, multimodal emission and wavelength stability over a wider range of temperature can be challenging. Here, we explore the use of Au nanorod antennae on InP whispering gallery mode lasers on Si for single-mode emission. We show that by proper choice of the antenna size and positioning, we can suppress the side modes of a cavity and achieve single-mode emission over a wide excitation range. We establish emission trends by varying the size of the antenna and show that the far-field radiation pattern differs significantly for devices with and without antenna. Furthermore, the antenna-induced single-mode emission is dominant from room temperature (300 K) down to 200 K, whereas the cavity without an antenna is multimodal and its dominant emission wavelength is highly temperature-dependent.

Broadband Metallic Fiber-to-Chip Couplers and a Low-Complexity Integrated Plasmonic Platform

We present a plasmonic platform featuring efficient, broadband metallic fiber-to-chip couplers that directly interface plasmonic slot waveguides, such as compact and high-speed electro-optic modulators. The metallic gratings exhibit an experimental fiber-to-slot coupling efficiency of -2.7 dB with -1.4 dB in simulations with the same coupling principle. Further, they offer a huge spectral window with a 3 dB passband of 350 nm. The technology relies on a vertically arranged layer stack, metal-insulator-metal waveguides, and fiber-to-slot couplers and is formed in only one lithography step with a minimum feature size of 250 nm. As an application example, we fabricate new modulator devices with an electro-optic organic material in the slot waveguide and reach 50 and 100 Gbit/s data modulation in the O- and C-bands within the same device. The devices' broad spectral bandwidth and their relaxed fabrication may render them suitable for experiments and applications in the scope of sensing, nonlinear optics, or telecommunications.

High-Speed Plasmonic Electro-Optic Beam Deflectors

Highly integrated active nanophotonics addressing both device footprint and operation speed demands is a key enabling technology for the next generation optical networks. Plasmonic systems have proven to be a serious contender to alleviate current performance limitations in electro-optic devices. Here, we demonstrate a plasmonic optical phased array (OPA) consisting of two 10 μm long plasmonic phase shifters, utilized to control the far-field radiation pattern of two subwavelength-separated emitters for aliasing-free beam steering with an angular range of ±5° and flat frequency response up to 18 GHz (with the potential bandwidth of 1.2 THz). Extreme optical and electrostatic field confinement with great spatial overlap results in high phase modulation efficiency (V_πL = 0.24 Vcm). The demonstrated approach of using plasmonic lithium niobate technology for optical beam manipulation offers inertia-free, robust, ultracompact, and high-speed beam steering.

Nanoscale All-Solid-State Plasmochromic Waveguide Nonresonant Modulator

Plasmochromics, the interaction of plasmons with an electrochromic material, have spawned a new class of active plasmonic devices. By introducing electrochromic materials into the plasmon's dielectric environment, plasmons can be actively manipulated. We introduce inorganic WO₃ and ion conducting LiNbO₃ layers as the core materials in a solid-state plasmochromic waveguide (PCWG) to demonstrate light modulation in a nanoplasmonic waveguide. The PCWG takes advantage of the high plasmonic loss at the high field located at the WO₃/Au interface, where the Li⁺ ions are intercalated into a thin WO₃ plasmon modulating layer. Through careful PCWG design, the direction for ion diffusion and plasmon propagation are decoupled, leading to enhanced modulation depth and fast EC switching times. We show that at a bias voltage of 2.5 V, the fabricated PCWG modulator achieves modulation depths as high as 20 and 38 dB for 10 and 20 μm long devices, respectively.