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Sloboda T, Kammlander B, Berggren E, Riva S, Giangrisostomi E, Ovsyannikov R, Rensmo H, Lindblad A, Cappel UB. Interface-resolved photovoltage generation dynamics and band structure evolution in a PbS quantum dot solar cell. NANOSCALE 2024. [PMID: 39435760 DOI: 10.1039/d4nr03428g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/23/2024]
Abstract
For directed development of solar cells using nanomaterials such as quantum dots, there is a need to understand the device function in detail. Understanding where photovoltage is generated in a device and where energy losses occur is a key aspect of this, and development of methods which can provide this information is needed. We have previously shown that time-resolved photoelectron spectroscopy of core levels can be used to follow the photovoltage dynamics at a specific interface of a lead sulfide quantum dot solar cell. Here, we use the method's selectivity and sample design to investigate the photovoltage generation in different parts of this solar cell and determine how the different layers (including the absorber layer thickness) contribute to charge separation. We show that all layers contribute to photovoltage generation and that a gold contact deposited on the quantum dots is necessary for full photovoltage generation and slow charge recombination. By combining the information obtained, we are able to experimentally follow the time evolution of the solar cell band structure during the charge separation process. Furthermore, we can identify which specific layers need to be optimized for an overall improvement of quantum dot cells. In the future, this methodology can be applied to other types of devices to provide insights into photovoltage generation mechanisms.
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Affiliation(s)
- Tamara Sloboda
- Division of Applied Physical Chemistry, Department of Chemistry, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden.
| | - Birgit Kammlander
- Division of Applied Physical Chemistry, Department of Chemistry, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden.
- Division of X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20, Uppsala, Sweden
| | - Elin Berggren
- Division of X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20, Uppsala, Sweden
| | - Stefania Riva
- Division of X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20, Uppsala, Sweden
| | - Erika Giangrisostomi
- Institute Methods and Instrumentation for Synchrotron Radiation Research, Helmholtz-Zentrum Berlin GmbH, Albert-Einstein-Straße 15, 12489 Berlin, Germany
| | - Ruslan Ovsyannikov
- Institute Methods and Instrumentation for Synchrotron Radiation Research, Helmholtz-Zentrum Berlin GmbH, Albert-Einstein-Straße 15, 12489 Berlin, Germany
| | - Håkan Rensmo
- Division of X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20, Uppsala, Sweden
- Wallenberg Initiative Materials Science for Sustainability, Department of Physics and Astronomy, Uppsala University, 751 20 Uppsala, Sweden
| | - Andreas Lindblad
- Division of X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20, Uppsala, Sweden
| | - Ute B Cappel
- Division of Applied Physical Chemistry, Department of Chemistry, KTH Royal Institute of Technology, SE-100 44 Stockholm, Sweden.
- Division of X-ray Photon Science, Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20, Uppsala, Sweden
- Wallenberg Initiative Materials Science for Sustainability, Department of Physics and Astronomy, Uppsala University, 751 20 Uppsala, Sweden
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2
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Hassan T, Kim J, Manh HN, Iqbal A, Gao Z, Kim H, Hussain N, Naqvi SM, Zaman S, Narayanasamy M, Lee SU, Kang J, Koo CM. Semiconducting Properties of Delaminated Titanium Nitride Ti 4N 3T x MXene with Gate-Tunable Electrical Conductivity. ACS NANO 2024; 18:23477-23488. [PMID: 39133538 DOI: 10.1021/acsnano.4c06966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
MXenes have garnered significant attention due to their atomically thin two-dimensional structure with metallic electronic properties. However, it has not yet been fully achieved to discover semiconducting MXenes to implement them into gate-tunable electronics such as field-effect transistors and phototransistors. Here, a semiconducting Ti4N3Tx MXene synthesized by using a modified oxygen-assisted molten salt etching method under ambient conditions, is reported. The oxygen-rich synthesis environment significantly enhances the etching reaction rate and selectivity of Al from a Ti4AlN3 MAX phase, resulting in well-delaminated and highly crystalline Ti4N3Tx MXene with minimal defects and high content of F and O, which led to its improved hydrophobicity and thermal stability. Notably, the synthesized Ti4N3Tx MXene exhibited p-type semiconducting characteristics, including gate-tunable electrical conductivity, with a current on-off ratio of 5 × 103 and a hole mobility of ∼0.008 cm2 V-1 s-1 at 243 K. The semiconducting property crucial for thin-film transistor applications is evidently associated with the surface terminations and the partial substitution of oxygen in the nitrogen lattice, as corroborated by density functional theory (DFT) calculations. Furthermore, the synthesized Ti4N3Tx exhibits strong light absorption characteristics and photocurrent generation. These findings highlight the delaminated Ti4N3Tx as an emerging two-dimensional semiconducting material for potential electronic and optoelectronic applications.
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Affiliation(s)
- Tufail Hassan
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Jihyun Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Hung Ngo Manh
- School of Chemical Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Aamir Iqbal
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Zhenguo Gao
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Hyerim Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Noushad Hussain
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Shabbir Madad Naqvi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Shakir Zaman
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Mugilan Narayanasamy
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Sang Uck Lee
- School of Chemical Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Joohoon Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
| | - Chong Min Koo
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
- School of Chemical Engineering, Sungkyunkwan University, Seobu-ro 2066, Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic of Korea
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3
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Bassani CL, van Anders G, Banin U, Baranov D, Chen Q, Dijkstra M, Dimitriyev MS, Efrati E, Faraudo J, Gang O, Gaston N, Golestanian R, Guerrero-Garcia GI, Gruenwald M, Haji-Akbari A, Ibáñez M, Karg M, Kraus T, Lee B, Van Lehn RC, Macfarlane RJ, Mognetti BM, Nikoubashman A, Osat S, Prezhdo OV, Rotskoff GM, Saiz L, Shi AC, Skrabalak S, Smalyukh II, Tagliazucchi M, Talapin DV, Tkachenko AV, Tretiak S, Vaknin D, Widmer-Cooper A, Wong GCL, Ye X, Zhou S, Rabani E, Engel M, Travesset A. Nanocrystal Assemblies: Current Advances and Open Problems. ACS NANO 2024; 18:14791-14840. [PMID: 38814908 DOI: 10.1021/acsnano.3c10201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2024]
Abstract
We explore the potential of nanocrystals (a term used equivalently to nanoparticles) as building blocks for nanomaterials, and the current advances and open challenges for fundamental science developments and applications. Nanocrystal assemblies are inherently multiscale, and the generation of revolutionary material properties requires a precise understanding of the relationship between structure and function, the former being determined by classical effects and the latter often by quantum effects. With an emphasis on theory and computation, we discuss challenges that hamper current assembly strategies and to what extent nanocrystal assemblies represent thermodynamic equilibrium or kinetically trapped metastable states. We also examine dynamic effects and optimization of assembly protocols. Finally, we discuss promising material functions and examples of their realization with nanocrystal assemblies.
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Affiliation(s)
- Carlos L Bassani
- Institute for Multiscale Simulation, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Greg van Anders
- Department of Physics, Engineering Physics, and Astronomy, Queen's University, Kingston, Ontario K7L 3N6, Canada
| | - Uri Banin
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Dmitry Baranov
- Division of Chemical Physics, Department of Chemistry, Lund University, SE-221 00 Lund, Sweden
| | - Qian Chen
- University of Illinois, Urbana, Illinois 61801, USA
| | - Marjolein Dijkstra
- Soft Condensed Matter & Biophysics, Debye Institute for Nanomaterials Science, Utrecht University, 3584 CC Utrecht, The Netherlands
| | - Michael S Dimitriyev
- Department of Polymer Science and Engineering, University of Massachusetts, Amherst, Massachusetts 01003, USA
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, USA
| | - Efi Efrati
- Department of Physics of Complex Systems, Weizmann Institute of Science, Rehovot 76100, Israel
- James Franck Institute, The University of Chicago, Chicago, Illinois 60637, USA
| | - Jordi Faraudo
- Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, E-08193 Bellaterra, Barcelona, Spain
| | - Oleg Gang
- Department of Chemical Engineering, Columbia University, New York, New York 10027, USA
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Nicola Gaston
- The MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Physics, The University of Auckland, Auckland 1142, New Zealand
| | - Ramin Golestanian
- Max Planck Institute for Dynamics and Self-Organization (MPI-DS), 37077 Göttingen, Germany
- Rudolf Peierls Centre for Theoretical Physics, University of Oxford, Oxford OX1 3PU, UK
| | - G Ivan Guerrero-Garcia
- Facultad de Ciencias de la Universidad Autónoma de San Luis Potosí, 78295 San Luis Potosí, México
| | - Michael Gruenwald
- Department of Chemistry, University of Utah, Salt Lake City, Utah 84112, USA
| | - Amir Haji-Akbari
- Department of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut 06511, USA
| | - Maria Ibáñez
- Institute of Science and Technology Austria (ISTA), 3400 Klosterneuburg, Austria
| | - Matthias Karg
- Heinrich-Heine-Universität Düsseldorf, 40225 Düsseldorf, Germany
| | - Tobias Kraus
- INM - Leibniz-Institute for New Materials, 66123 Saarbrücken, Germany
- Saarland University, Colloid and Interface Chemistry, 66123 Saarbrücken, Germany
| | - Byeongdu Lee
- X-ray Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Reid C Van Lehn
- Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53717, USA
| | - Robert J Macfarlane
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02142, USA
| | - Bortolo M Mognetti
- Center for Nonlinear Phenomena and Complex Systems, Université Libre de Bruxelles, 1050 Brussels, Belgium
| | - Arash Nikoubashman
- Leibniz-Institut für Polymerforschung Dresden e.V., 01069 Dresden, Germany
- Institut für Theoretische Physik, Technische Universität Dresden, 01069 Dresden, Germany
| | - Saeed Osat
- Max Planck Institute for Dynamics and Self-Organization (MPI-DS), 37077 Göttingen, Germany
| | - Oleg V Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, CA 90089, USA
- Department of Physics and Astronomy, University of Southern California, Los Angeles, California 90089, USA
| | - Grant M Rotskoff
- Department of Chemistry, Stanford University, Stanford, California 94305, USA
| | - Leonor Saiz
- Department of Biomedical Engineering, University of California, Davis, California 95616, USA
| | - An-Chang Shi
- Department of Physics & Astronomy, McMaster University, Hamilton, Ontario L8S 4M1, Canada
| | - Sara Skrabalak
- Department of Chemistry, Indiana University, Bloomington, Indiana 47405, USA
| | - Ivan I Smalyukh
- Department of Physics and Chemical Physics Program, University of Colorado, Boulder, Colorado 80309, USA
- International Institute for Sustainability with Knotted Chiral Meta Matter, Hiroshima University, Higashi-Hiroshima City 739-0046, Japan
| | - Mario Tagliazucchi
- Universidad de Buenos Aires, Ciudad Universitaria, C1428EHA Ciudad Autónoma de Buenos Aires, Buenos Aires 1428 Argentina
| | - Dmitri V Talapin
- Department of Chemistry, James Franck Institute and Pritzker School of Molecular Engineering, The University of Chicago, Chicago, Illinois 60637, USA
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439, USA
| | - Alexei V Tkachenko
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Sergei Tretiak
- Theoretical Division and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
| | - David Vaknin
- Iowa State University and Ames Lab, Ames, Iowa 50011, USA
| | - Asaph Widmer-Cooper
- ARC Centre of Excellence in Exciton Science, School of Chemistry, University of Sydney, Sydney, New South Wales 2006, Australia
- The University of Sydney Nano Institute, University of Sydney, Sydney, New South Wales 2006, Australia
| | - Gerard C L Wong
- Department of Bioengineering, University of California, Los Angeles, California 90095, USA
- Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, USA
- Department of Microbiology, Immunology & Molecular Genetics, University of California, Los Angeles, CA 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, CA 90095, USA
| | - Xingchen Ye
- Department of Chemistry, Indiana University, Bloomington, Indiana 47405, USA
| | - Shan Zhou
- Department of Nanoscience and Biomedical Engineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701, USA
| | - Eran Rabani
- Department of Chemistry, University of California and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- The Raymond and Beverly Sackler Center of Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 69978, Israel
| | - Michael Engel
- Institute for Multiscale Simulation, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Alex Travesset
- Iowa State University and Ames Lab, Ames, Iowa 50011, USA
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Kober M, Smykalla D, Ploss B, Wächtler M, Kumar K, Stelter M, Engel S. Ferroelectric Properties of Polymer-Semiconductor Hybrid Material or Composite under Optical Excitation. Polymers (Basel) 2024; 16:929. [PMID: 38611187 PMCID: PMC11013365 DOI: 10.3390/polym16070929] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/30/2024] [Revised: 03/14/2024] [Accepted: 03/22/2024] [Indexed: 04/14/2024] Open
Abstract
Polymer-semiconductor hybrid materials or composites have been investigated with respect to their microstructure, optical, photoconductive, and ferroelectric properties. For this purpose, either CdSe quantum dots or (Cd:Zn)S microparticles were dispersed in poly(vinylidenefluoride-trifluoroethylene) solution and hot pressed to films. In both material systems, the electrical conductivity and the polarization behavior could be controlled by the intensity of the optical excitation. The simultaneous high optical transparency of the CdSe quantum-dot-based hybrid materials makes them particularly interesting for applications in the field of flexible, high-resolution sensors.
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Affiliation(s)
- Michael Kober
- Institute for Technical and Environmental Chemistry, Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena, Germany; (D.S.); (M.S.); (S.E.)
| | - David Smykalla
- Institute for Technical and Environmental Chemistry, Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena, Germany; (D.S.); (M.S.); (S.E.)
| | - Bernd Ploss
- Department of SciTec, University of Applied Sciences Jena, Carl-Zeiss-Promenade 2, 07745 Jena, Germany;
| | - Maria Wächtler
- Chemistry Department and State Research Center OPTIMAS, RPTU Kaiserslautern-Landau, Erwin-Schrödinger-Str. 52, 67663 Kaiserslautern, Germany;
| | - Krishan Kumar
- Department Functional Interfaces, Leibniz Institute of Photonic Technology Jena, Albert-Einstein-Straße 9, 07745 Jena, Germany;
| | - Michael Stelter
- Institute for Technical and Environmental Chemistry, Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena, Germany; (D.S.); (M.S.); (S.E.)
| | - Sebastian Engel
- Institute for Technical and Environmental Chemistry, Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena, Germany; (D.S.); (M.S.); (S.E.)
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5
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Zhou X, Pu C. Proton Shuttle-Assisted Surface Reconstruction toward Nonpolar Facets-Terminated Zinc-Blende CdSe/CdS Core/Shell Quantum Dots. J Am Chem Soc 2023; 145:26287-26295. [PMID: 38014508 DOI: 10.1021/jacs.3c09413] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
Surface reconstruction can rearrange the surface atoms of a crystal without the need of growth processes and has the potential to synthesize crystals with novel morphologies and facets that cannot be obtained through regular synthesis. However, little is known about the molecular mechanisms of the surface reconstruction process. Here, utilizing surface reconstruction, we report the synthesis of nonpolar facets (110) facets)-terminated dodecahedral zinc-blende CdSe/CdS core/shell quantum dots. The morphology transformation is achieved by first fully exchanging the cadmium carboxylate ligand with oleylamine and then undergoing surface reconstruction. The surface reconstruction-induced morphology transformation is confirmed by transmission electron microscopy and absorption spectroscopy. Details of kinetic experiments and simulation results demonstrated that successful surface reconstruction must be assisted by a proton shuttle. Except for the first report on zinc-blende quantum dots terminated with (110) facets, the surface reconstruction aided by the proton shuttle offers valuable insights for devising methods to regulate the properties of nanocrystals.
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Affiliation(s)
- Xiaolan Zhou
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Chaodan Pu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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Wang C, Chen Z, Liu Z, Ma T, Chen X, Zhang M, Luo D, Hyun BR, Liu X. Adjusting Microscale to Atomic-Scale Structural Order in PbS Nanocrystal Superlattice for Enhanced Photodetector Performance. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300975. [PMID: 37066743 DOI: 10.1002/smll.202300975] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2023] [Revised: 03/20/2023] [Indexed: 06/19/2023]
Abstract
An investigation is presented into the effect of the long-range order on the optoelectronic properties of PbS quantum dot (QD) superlattices, which form mesocrystals, for potential use in photodetector applications. By self-assembly of QD nanocrystals on an Si/SiOx substrate, a highly ordered and densely packed PbS QD superlattice with a microscale size is obtained. The results demonstrate that annealing treatment induces mesocrystalline superlattices with preferred growth orientation, achieved by dislodging ligands. The improved orientation and electronic coupling of the mesocrystalline superlattices exhibit superior photodetector performance compared to disordered QD structures and closely packed superlattices. This improved performance is attributed to atomic alignment between QDs, leading to enhanced electronic coupling. The findings suggest that these mesocrystalline superlattices have promising potential for the next generation of QD optoelectronic devices.
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Affiliation(s)
- Chuanglei Wang
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Zhenjun Chen
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Zheng Liu
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Tianchan Ma
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Xiya Chen
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Menglong Zhang
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P. R. China
| | - Dongxiang Luo
- Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou, 510006, P. R. China
| | - Byung-Ryool Hyun
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Xiao Liu
- School of Semiconductor Science and Technology, South China Normal University, Guangzhou, 510631, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, 510631, P. R. China
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Septianto RD, Miranti R, Kikitsu T, Hikima T, Hashizume D, Matsushita N, Iwasa Y, Bisri SZ. Enabling metallic behaviour in two-dimensional superlattice of semiconductor colloidal quantum dots. Nat Commun 2023; 14:2670. [PMID: 37236922 DOI: 10.1038/s41467-023-38216-y] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2022] [Accepted: 04/21/2023] [Indexed: 05/28/2023] Open
Abstract
Semiconducting colloidal quantum dots and their assemblies exhibit superior optical properties owing to the quantum confinement effect. Thus, they are attracting tremendous interest from fundamental research to commercial applications. However, the electrical conducting properties remain detrimental predominantly due to the orientational disorder of quantum dots in the assembly. Here we report high conductivity and the consequent metallic behaviour of semiconducting colloidal quantum dots of lead sulphide. Precise facet orientation control to forming highly-ordered quasi-2-dimensional epitaxially-connected quantum dot superlattices is vital for high conductivity. The intrinsically high mobility over 10 cm2 V-1 s-1 and temperature-independent behaviour proved the high potential of semiconductor quantum dots for electrical conducting properties. Furthermore, the continuously tunable subband filling will enable quantum dot superlattices to be a future platform for emerging physical properties investigations, such as strongly correlated and topological states, as demonstrated in the moiré superlattices of twisted bilayer graphene.
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Affiliation(s)
- Ricky Dwi Septianto
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
- Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo, 152-8550, Japan
| | - Retno Miranti
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Tomoka Kikitsu
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Takaaki Hikima
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo, Hyogo, 679-5198, Japan
| | - Daisuke Hashizume
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Nobuhiro Matsushita
- Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo, 152-8550, Japan
| | - Yoshihiro Iwasa
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
- Quantum Phase Electronic Center (QPEC) and Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Satria Zulkarnaen Bisri
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan.
- Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo, 152-8550, Japan.
- Department of Applied Physics and Chemical Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo, 184-8588, Japan.
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Cavallo M, Bossavit E, Zhang H, Dabard C, Dang TH, Khalili A, Abadie C, Alchaar R, Mastrippolito D, Prado Y, Becerra L, Rosticher M, Silly MG, Utterback JK, Ithurria S, Avila J, Pierucci D, Lhuillier E. Mapping the Energy Landscape from a Nanocrystal-Based Field Effect Transistor under Operation Using Nanobeam Photoemission Spectroscopy. NANO LETTERS 2023; 23:1363-1370. [PMID: 36692377 DOI: 10.1021/acs.nanolett.2c04637] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As the field of nanocrystal-based optoelectronics matures, more advanced techniques must be developed in order to reveal the electronic structure of nanocrystals, particularly with device-relevant conditions. So far, most of the efforts have been focused on optical spectroscopy, and electrochemistry where an absolute energy reference is required. Device optimization requires probing not only the pristine material but also the material in its actual environment (i.e., surrounded by a transport layer and an electrode, in the presence of an applied electric field). Here, we explored the use of photoemission microscopy as a strategy for operando investigation of NC-based devices. We demonstrate that the method can be applied to a variety of materials and device geometries. Finally, we show that it provides direct access to the metal-semiconductor interface band bending as well as the distance over which the gate effect propagates in field-effect transistors.
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Affiliation(s)
- Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Corentin Dabard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, 75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Dario Mastrippolito
- Department of Physical and Chemical Sciences (DSFC), University of L'Aquila, Via Vetoio, 67100 L'Aquila, Italy
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Loïc Becerra
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Michael Rosticher
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, 75005 Paris, France
| | - Mathieu G Silly
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - James K Utterback
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - José Avila
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Debora Pierucci
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
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9
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Vogel YB, Stam M, Mulder JT, Houtepen AJ. Long-Range Charge Transport via Redox Ligands in Quantum Dot Assemblies. ACS NANO 2022; 16:21216-21224. [PMID: 36516407 PMCID: PMC9798906 DOI: 10.1021/acsnano.2c09192] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2022] [Accepted: 12/12/2022] [Indexed: 06/02/2023]
Abstract
We present a strategy to actively engineer long-range charge transport in colloidal quantum dot assemblies by using ligand functionalities that introduce electronic states and provide a path for carrier transfer. This is a shift away from the use of inactive spacers to modulate charge transport through the lowering of the tunneling barrier for interparticle carrier transfer. This is accomplished with the use of electronically coupled redox ligands by which a self-exchange chain reaction takes place and long-range charge transport is enabled across the film. We identified the different modes of charge transport in these quantum dot/redox ligand assemblies, their energetic position and kinetics, and explain how to rationally manipulate them through modulation of the Fermi level and redox ligand coverage.
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10
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Aryal S, Frimpong J, Liu ZF. Comparative Study of Covalent and van der Waals CdS Quantum Dot Assemblies from Many-Body Perturbation Theory. J Phys Chem Lett 2022; 13:10153-10161. [PMID: 36278936 DOI: 10.1021/acs.jpclett.2c02856] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Quantum dot (QD) assemblies are nanostructured networks made from aggregates of QDs and feature improved charge and energy transfer efficiencies compared to discrete QDs. Using first-principles many-body perturbation theory, we systematically compare the electronic and optical properties of two types of CdS QD assemblies that have been experimentally investigated: (i) QD gels, where individual QDs are covalently connected via di- or polysulfide bonds, and (ii) QD nanocrystals, where individual QDs are bound via van der Waals interactions. Our work illustrates how the electronic and optical properties evolve when discrete QDs are assembled into 1D, 2D, and 3D gels and nanocrystals, as well as how the one-body and many-body interactions in these systems impact the trends as the dimensionality of the assembly increases. Furthermore, our work reveals the crucial role of the di- or polysulfide covalent bonds in the localization of the excitons, which highlights the difference between QD gels and QD nanocrystals.
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Affiliation(s)
- Sandip Aryal
- Department of Chemistry, Wayne State University, Detroit, Michigan 48202, United States
| | - Joseph Frimpong
- Department of Chemistry, Wayne State University, Detroit, Michigan 48202, United States
| | - Zhen-Fei Liu
- Department of Chemistry, Wayne State University, Detroit, Michigan 48202, United States
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11
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Sklénard B, Mugny G, Chehaibou B, Delerue C, Arnaud A, Li J. Size and Solvation Effects on Electronic and Optical Properties of PbS Quantum Dots. J Phys Chem Lett 2022; 13:9044-9050. [PMID: 36150151 DOI: 10.1021/acs.jpclett.2c02247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
PbS quantum dots (QDs), among the most mature nanocrystals obtained by colloidal chemistry, are promising candidates in optoelectronic applications at various operational frequencies. QD device performances are often determined by charge transport, either carrier injection before photoemission or charge detection after photoabsorption, which is significantly influenced by the dielectric environment. Here, we present the electronic structure and the optical gap of PbS QDs versus size for various solvents calculated using ab initio methods including the many-body perturbation approaches. This study highlights the importance of the dielectric environment, pointing out (1) the non-negligible shift of the electronic structure due to the ground state polarization and (2) a substantial impact on the electronic bandgap. The electron-hole binding energy, which varies largely with the QD size and solvent, is well-described by an electrostatic model. This study reveals the fundamental physics of size and solvation effects, which could be useful to design PbS QD-based optoelectronic devices.
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Affiliation(s)
| | - Gabriel Mugny
- STMicroelectronics, 12 rue Jules Horowitz, 38019 Grenoble, France
| | - Bilal Chehaibou
- Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, Centrale Lille, Junia, UMR 8520-IEMN, F-59000 Lille, France
| | - Christophe Delerue
- Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, Centrale Lille, Junia, UMR 8520-IEMN, F-59000 Lille, France
| | - Arthur Arnaud
- STMicroelectronics, 850 rue J. Monnet, 38926 Crolles, France
| | - Jing Li
- Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
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12
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Tabernig SW, Yuan L, Cordaro A, Teh ZL, Gao Y, Patterson RJ, Pusch A, Huang S, Polman A. Optically Resonant Bulk Heterojunction PbS Quantum Dot Solar Cell. ACS NANO 2022; 16:13750-13760. [PMID: 36036908 PMCID: PMC9527793 DOI: 10.1021/acsnano.1c11330] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/20/2021] [Accepted: 08/24/2022] [Indexed: 06/15/2023]
Abstract
We design an optically resonant bulk heterojunction solar cell to study optoelectronic properties of nanostructured p-n junctions. The nanostructures yield strong light-matter interaction as well as distinct charge-carrier extraction behavior, which together improve the overall power conversion efficiency. We demonstrate high-resolution substrate conformal soft-imprint lithography technology in combination with state-of-the art ZnO nanoparticles to create a nanohole template in an electron transport layer. The nanoholes are infiltrated with PbS quantum dots (QDs) to form a nanopatterned depleted heterojunction. Optical simulations show that the absorption per unit volume in the cylindrical QD absorber layer is enhanced by 19.5% compared to a planar reference. This is achieved for a square array of QD nanopillars of 330 nm height and 320 nm diameter, with a pitch of 500 nm on top of a residual QD layer of 70 nm, surrounded by ZnO. Electronic simulations show that the patterning results in a current gain of 3.2 mA/cm2 and a slight gain in voltage, yielding an efficiency gain of 0.4%. Our simulations further show that the fill factor is highly sensitive to the patterned structure. This is explained by the electric field strength varying strongly across the patterned absorber. We outline a path toward further optimized optically resonant nanopattern geometries with enhanced carrier collection properties. We demonstrate a 0.74 mA/cm2 current gain for a patterned cell compared to a planar cell in experiments, owing to a much improved infrared response, as predicted by our simulations.
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Affiliation(s)
- Stefan W. Tabernig
- Center
for Nanophotonics, NWO-Institute AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
- School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, 229 Anzac Parade, 2052 Sydney, Australia
| | - Lin Yuan
- School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, 229 Anzac Parade, 2052 Sydney, Australia
- School
of Engineering, Macquarie University, Sydney 2109, Australia
| | - Andrea Cordaro
- Center
for Nanophotonics, NWO-Institute AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
- Van
der Waals-Zeeman Institute, Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands
| | - Zhi Li Teh
- School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, 229 Anzac Parade, 2052 Sydney, Australia
| | - Yijun Gao
- School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, 229 Anzac Parade, 2052 Sydney, Australia
| | - Robert J. Patterson
- School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, 229 Anzac Parade, 2052 Sydney, Australia
| | - Andreas Pusch
- School
of Photovoltaic and Renewable Energy Engineering, University of New South Wales, 229 Anzac Parade, 2052 Sydney, Australia
| | - Shujuan Huang
- School
of Engineering, Macquarie University, Sydney 2109, Australia
| | - Albert Polman
- Center
for Nanophotonics, NWO-Institute AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands
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13
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Jiang XX, Li P, Zhao MY, Chen RC, Wang ZG, Xie JX, Lv YK. In situ encapsulation of SQDs by zinc ion-induced ZIF-8 growth strategy for fluorescent and colorimetric dual-signal detection of alkaline phosphatase. Anal Chim Acta 2022; 1221:340103. [DOI: 10.1016/j.aca.2022.340103] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/30/2022] [Revised: 06/13/2022] [Accepted: 06/17/2022] [Indexed: 11/29/2022]
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14
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Zhang Z, Tang Y, Ying Y, Guo J, Gan M, Jiang Y, Xing C, Pan S, Xu M, Zhou Y, Zhang H, Leung CW, Huang H, Mak CL, Fei L. Multistep nucleation visualized during solid-state crystallization. MATERIALS HORIZONS 2022; 9:1670-1678. [PMID: 35470363 DOI: 10.1039/d2mh00174h] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Mechanisms of nucleation have been debated for more than a century, despite successes of classical nucleation theory. The nucleation process has been recently argued as involving a nonclassical mechanism (the "two-step" mechanism) in which an intermediate step occurs before the formation of a nascent ordered phase. However, a thorough understanding of this mechanism, in terms of both microscopic kinetics and thermodynamics, remains experimentally challenging. Here, in situ observations using transmission electron microscopy on a solid-state nucleation case indicate that early-stage crystallization can follow the non-classical pathway, yet proceed via a more complex manner in which multiple metastable states precede the emergence of a stable nucleus. The intermediate steps were sequentially isolated as spinodal decomposition of amorphous precursor, mass transport and structural oscillations between crystalline and amorphous states. Our experimental and theoretical analyses support the idea that the energetic favorability is the driving force for the observed sequence of events. Due to the broad applicability of solid-state crystallization, the findings of this study offer new insights into modern nucleation theory and a potential avenue for materials design.
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Affiliation(s)
- Zhouyang Zhang
- School of Physics and Materials Science, Jiangxi Key Laboratory for Two-Dimensional Materials, Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Multiscale Interdisciplinary Study, Nanchang University, Nanchang, Jiangxi 330031, China.
| | - Yujie Tang
- Beijing Key Laboratory of Ionic Liquids Clean Process, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China.
| | - Yiran Ying
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China.
| | - Junqing Guo
- School of Physics and Materials Science, Jiangxi Key Laboratory for Two-Dimensional Materials, Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Multiscale Interdisciplinary Study, Nanchang University, Nanchang, Jiangxi 330031, China.
| | - Min Gan
- School of Physics and Materials Science, Jiangxi Key Laboratory for Two-Dimensional Materials, Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Multiscale Interdisciplinary Study, Nanchang University, Nanchang, Jiangxi 330031, China.
| | - Yateng Jiang
- School of Physics and Materials Science, Jiangxi Key Laboratory for Two-Dimensional Materials, Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Multiscale Interdisciplinary Study, Nanchang University, Nanchang, Jiangxi 330031, China.
| | - Chunxian Xing
- School of Physics and Materials Science, Jiangxi Key Laboratory for Two-Dimensional Materials, Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Multiscale Interdisciplinary Study, Nanchang University, Nanchang, Jiangxi 330031, China.
- Beijing Key Laboratory of Ionic Liquids Clean Process, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China.
| | - Shanshan Pan
- Beijing Key Laboratory of Ionic Liquids Clean Process, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China.
| | - Ming Xu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China.
| | - Yangbo Zhou
- School of Physics and Materials Science, Jiangxi Key Laboratory for Two-Dimensional Materials, Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Multiscale Interdisciplinary Study, Nanchang University, Nanchang, Jiangxi 330031, China.
| | - Haitao Zhang
- Beijing Key Laboratory of Ionic Liquids Clean Process, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China.
| | - Chi Wah Leung
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China.
| | - Haitao Huang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China.
| | - Chee Leung Mak
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China.
| | - Linfeng Fei
- School of Physics and Materials Science, Jiangxi Key Laboratory for Two-Dimensional Materials, Jiangxi Engineering Laboratory for Advanced Functional Thin Films and Jiangxi Key Laboratory for Multiscale Interdisciplinary Study, Nanchang University, Nanchang, Jiangxi 330031, China.
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15
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Weinbub J, Kosik R. Computational perspective on recent advances in quantum electronics: from electron quantum optics to nanoelectronic devices and systems. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:163001. [PMID: 35008077 DOI: 10.1088/1361-648x/ac49c6] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2021] [Accepted: 01/10/2022] [Indexed: 06/14/2023]
Abstract
Quantum electronics has significantly evolved over the last decades. Where initially the clear focus was on light-matter interactions, nowadays approaches based on the electron's wave nature have solidified themselves as additional focus areas. This development is largely driven by continuous advances in electron quantum optics, electron based quantum information processing, electronic materials, and nanoelectronic devices and systems. The pace of research in all of these areas is astonishing and is accompanied by substantial theoretical and experimental advancements. What is particularly exciting is the fact that the computational methods, together with broadly available large-scale computing resources, have matured to such a degree so as to be essential enabling technologies themselves. These methods allow to predict, analyze, and design not only individual physical processes but also entire devices and systems, which would otherwise be very challenging or sometimes even out of reach with conventional experimental capabilities. This review is thus a testament to the increasingly towering importance of computational methods for advancing the expanding field of quantum electronics. To that end, computational aspects of a representative selection of recent research in quantum electronics are highlighted where a major focus is on the electron's wave nature. By categorizing the research into concrete technological applications, researchers and engineers will be able to use this review as a source for inspiration regarding problem-specific computational methods.
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Affiliation(s)
- Josef Weinbub
- Christian Doppler Laboratory for High Performance TCAD, Institute for Microelectronics, TU Wien, Austria
| | - Robert Kosik
- Institute for Microelectronics, TU Wien, Austria
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16
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Korath Shivan S, Maier A, Scheele M. Emergent properties in supercrystals of atomically precise nanoclusters and colloidal nanocrystals. Chem Commun (Camb) 2022; 58:6998-7017. [DOI: 10.1039/d2cc00778a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We provide a comprehensive account of the optical, electrical and mechanical properties that result from the self-assembly of colloidal nanocrystals or atomically precise nanoclusters into crystalline arrays with long-range order....
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17
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Jasrasaria D, Rabani E. Interplay of Surface and Interior Modes in Exciton-Phonon Coupling at the Nanoscale. NANO LETTERS 2021; 21:8741-8748. [PMID: 34609148 DOI: 10.1021/acs.nanolett.1c02953] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Exciton-phonon coupling (EXPC) plays a key role in the optoelectronic properties of semiconductor nanocrystals (NCs), but a microscopic picture of EXPC is still lacking, particularly regarding the magnitude and scaling with NC size, the dependence on phonon frequency, and the role of the NC surface. The computational complexity associated with accurately describing excitons and phonons has limited previous theoretical studies of EXPC to small NCs, noninteracting electron-hole models, and/or a small number of phonon modes. Here, we develop an atomistic approach for describing EXPC in NCs of experimentally relevant sizes. We validate our approach by calculating the reorganization energies, a measure of EXPC, for CdSe and CdSe-CdS core-shell NCs, finding good agreement with experimental measurements. We demonstrate that exciton formation distorts the NC lattice primarily along the coordinates of low-frequency acoustic modes. Modes at the NC surface play a significant role in smaller NCs while interior modes dominate for larger systems.
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Affiliation(s)
- Dipti Jasrasaria
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Eran Rabani
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, Israel 69978
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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18
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García de Arquer FP, Talapin DV, Klimov VI, Arakawa Y, Bayer M, Sargent EH. Semiconductor quantum dots: Technological progress and future challenges. Science 2021; 373:373/6555/eaaz8541. [PMID: 34353926 DOI: 10.1126/science.aaz8541] [Citation(s) in RCA: 356] [Impact Index Per Article: 118.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
In quantum-confined semiconductor nanostructures, electrons exhibit distinctive behavior compared with that in bulk solids. This enables the design of materials with tunable chemical, physical, electrical, and optical properties. Zero-dimensional semiconductor quantum dots (QDs) offer strong light absorption and bright narrowband emission across the visible and infrared wavelengths and have been engineered to exhibit optical gain and lasing. These properties are of interest for imaging, solar energy harvesting, displays, and communications. Here, we offer an overview of advances in the synthesis and understanding of QD nanomaterials, with a focus on colloidal QDs, and discuss their prospects in technologies such as displays and lighting, lasers, sensing, electronics, solar energy conversion, photocatalysis, and quantum information.
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Affiliation(s)
- F Pelayo García de Arquer
- Department of Electrical and Computer Engineering, University of Toronto, 35 St. George Street, Toronto, ON M5S 1A4, Canada.,ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, Barcelona 08860, Spain
| | - Dmitri V Talapin
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
| | - Victor I Klimov
- Chemistry Division, C-PCS, Los Alamos National Laboratory, Los Alamos, NM 87545, USA
| | | | - Manfred Bayer
- Technische Universitat Dortmund, 44221 Dortmund, Germany
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 35 St. George Street, Toronto, ON M5S 1A4, Canada.
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19
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Biondi M, Choi MJ, Wang Z, Wei M, Lee S, Choubisa H, Sagar LK, Sun B, Baek SW, Chen B, Todorović P, Najarian AM, Sedighian Rasouli A, Nam DH, Vafaie M, Li YC, Bertens K, Hoogland S, Voznyy O, García de Arquer FP, Sargent EH. Facet-Oriented Coupling Enables Fast and Sensitive Colloidal Quantum Dot Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101056. [PMID: 34245178 DOI: 10.1002/adma.202101056] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2021] [Revised: 04/14/2021] [Indexed: 06/13/2023]
Abstract
Charge carrier transport in colloidal quantum dot (CQD) solids is strongly influenced by coupling among CQDs. The shape of as-synthesized CQDs results in random orientational relationships among facets in CQD solids, and this limits the CQD coupling strength and the resultant performance of optoelectronic devices. Here, colloidal-phase reconstruction of CQD surfaces, which improves facet alignment in CQD solids, is reported. This strategy enables control over CQD faceting and allows demonstration of enhanced coupling in CQD solids. The approach utilizes post-synthetic resurfacing and unites surface passivation and colloidal stability with a propensity for dots to couple via (100):(100) facets, enabling increased hole mobility. Experimentally, the CQD solids exhibit a 10× increase in measured hole mobility compared to control CQD solids, and enable photodiodes (PDs) exhibiting 70% external quantum efficiency (vs 45% for control devices) and specific detectivity, D* > 1012 Jones, each at 1550 nm. The photodetectors feature a 7 ns response time for a 0.01 mm2 area-the fastest reported for solution-processed short-wavelength infrared PDs.
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Affiliation(s)
- Margherita Biondi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Min-Jae Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Zhibo Wang
- Department of Physical and Environmental Sciences, University of Toronto Scarborough, Scarborough, Ontario, M1C 1A4, Canada
| | - Mingyang Wei
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Seungjin Lee
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Hitarth Choubisa
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Laxmi Kishore Sagar
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Bin Sun
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Se-Woong Baek
- Department of Chemical and Biological Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Bin Chen
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Petar Todorović
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Amin Morteza Najarian
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Armin Sedighian Rasouli
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Dae-Hyun Nam
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Yuguang C Li
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Koen Bertens
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Oleksandr Voznyy
- Department of Physical and Environmental Sciences, University of Toronto Scarborough, Scarborough, Ontario, M1C 1A4, Canada
| | - F Pelayo García de Arquer
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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20
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Caillas A, Suffit S, Filloux P, Lhuillier E, Degiron A. Identification of Two Regimes of Carrier Thermalization in PbS Nanocrystal Assemblies. J Phys Chem Lett 2021; 12:5123-5131. [PMID: 34029086 DOI: 10.1021/acs.jpclett.1c01206] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We bring fresh insight into the ensemble properties of PbS colloidal quantum dots with a critical review of the literature on semiconductors followed by systematic comparisons between steady-state photocurrent and photoluminescence measurements. Our experiments, performed with sufficiently low powers to neglect nonlinear effects, indicate that the photoluminescence spectra have no other noticeable contribution beside the radiative recombination of thermalized photocarriers (i.e., photocarriers in thermodynamic quasi-equilibrium). A phenomenological model based on the local Kirchhoff law is proposed that makes it possible to identify the nature of the thermalized photocarriers and to extract their temperatures from the measurements. Two regimes are observed: For highly compact assemblies of PbS quantum dots stripped from organic ligands, the thermalization concerns photocarriers distributed over a wide energy range. With PbS quantum dots cross-linked with 1,2-ethanedithiol or longer organic ligand chains, the thermalization concerns solely the fundamental exciton and can quantitatively explain all the observations, including the precise Stokes shift between the absorbance and luminescence maxima.
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Affiliation(s)
- Augustin Caillas
- Université de Paris, CNRS, Laboratoire Matériaux et Phénomènes Quantiques, F-75205 Paris, France
| | - Stéphan Suffit
- Université de Paris, CNRS, Laboratoire Matériaux et Phénomènes Quantiques, F-75205 Paris, France
| | - Pascal Filloux
- Université de Paris, CNRS, Laboratoire Matériaux et Phénomènes Quantiques, F-75205 Paris, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Aloyse Degiron
- Université de Paris, CNRS, Laboratoire Matériaux et Phénomènes Quantiques, F-75205 Paris, France
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21
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Manzhos S, Chueh CC, Giorgi G, Kubo T, Saianand G, Lüder J, Sonar P, Ihara M. Materials Design and Optimization for Next-Generation Solar Cell and Light-Emitting Technologies. J Phys Chem Lett 2021; 12:4638-4657. [PMID: 33974435 DOI: 10.1021/acs.jpclett.1c00714] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We review some of the most potent directions in the design of materials for next-generation solar cell and light-emitting technologies that go beyond traditional solid-state inorganic semiconductor-based devices, from both the experimental and computational standpoints. We focus on selected recent conceptual advances in tackling issues which are expected to significantly impact applied literature in the coming years. Specifically, we consider solution processability, design of dopant-free charge transport materials, two-dimensional conjugated polymeric semiconductors, and colloidal quantum dot assemblies in the fields of experimental synthesis, characterization, and device fabrication. Key modeling issues that we consider are calculations of optical properties and of effects of aggregation, including recent advances in methods beyond linear-response time-dependent density functional theory and recent insights into the effects of correlation when going beyond the single-particle ansatz as well as in the context of modeling of thermally activated fluorescence.
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Affiliation(s)
- Sergei Manzhos
- School of Materials and Chemical Technology, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8552, Japan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Giacomo Giorgi
- Department of Civil & Environmental Engineering (DICA), Università degli Studi di Perugia, Via G. Duranti 93, 06125 Perugia, Italy
- CNR-SCITEC, 06123 Perugia, Italy
| | - Takaya Kubo
- Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8904, Japan
| | - Gopalan Saianand
- School of Chemistry and Physics, Queensland University of Technology (QUT), 2 George Street, 4001 Brisbane, Australia
- Global Center for Environmental Remediation (GCER), College of Engineering, Science and Environment, The University of Newcastle, Callaghan, NSW 2308, Australia
| | - Johann Lüder
- Department of Materials and Optoelectronic Science, National Sun Yat-sen University, 80424, No. 70, Lien-Hai Road, Kaohsiung, Taiwan R.O.C
- Center of Crystal Research, National Sun Yat-sen University, 80424, No. 70, Lien-Hai Road, Kaohsiung, Taiwan R.O.C
| | - Prashant Sonar
- School of Chemistry and Physics, Queensland University of Technology (QUT), 2 George Street, 4001 Brisbane, Australia
| | - Manabu Ihara
- School of Materials and Chemical Technology, Tokyo Institute of Technology, Ookayama 2-12-1, Meguro-ku, Tokyo 152-8552, Japan
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22
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Ondry JC, Philbin JP, Lostica M, Rabani E, Alivisatos AP. Colloidal Synthesis Path to 2D Crystalline Quantum Dot Superlattices. ACS NANO 2021; 15:2251-2262. [PMID: 33377761 DOI: 10.1021/acsnano.0c07202] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
By combining colloidal nanocrystal synthesis, self-assembly, and solution phase epitaxial growth techniques, we developed a general method for preparing single dot thick atomically attached quantum dot (QD) superlattices with high-quality translational and crystallographic orientational order along with state-of-the-art uniformity in the attachment thickness. The procedure begins with colloidal synthesis of hexagonal prism shaped core/shell QDs (e.g., CdSe/CdS), followed by liquid subphase self-assembly and immobilization of superlattices on a substrate. Solution phase epitaxial growth of additional semiconductor material fills in the voids between the particles, resulting in a QD-in-matrix structure. The photoluminescence emission spectra of the QD-in-matrix structure retains characteristic 0D electronic confinement. Importantly, annealing of the resulting structures removes inhomogeneities in the QD-QD inorganic bridges, which our atomistic electronic structure calculations demonstrate would otherwise lead to Anderson-type localization. The piecewise nature of this procedure allows one to independently tune the size and material of the QD core, shell, QD-QD distance, and the matrix material. These four choices can be tuned to control many properties (degree of quantum confinement, quantum coupling, band alignments, etc.) depending on the specific applications. Finally, cation exchange reactions can be performed on the final QD-in-matrix, as demonstrated herein with a CdSe/CdS to HgSe/HgS conversion.
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Affiliation(s)
- Justin C Ondry
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Kavli Energy NanoScience Institute, Berkeley, California 94720, United States
| | - John P Philbin
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Michael Lostica
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Eran Rabani
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, Israel 69978
| | - A Paul Alivisatos
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Kavli Energy NanoScience Institute, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States
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23
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Calcabrini M, Genç A, Liu Y, Kleinhanns T, Lee S, Dirin DN, Akkerman QA, Kovalenko MV, Arbiol J, Ibáñez M. Exploiting the Lability of Metal Halide Perovskites for Doping Semiconductor Nanocomposites. ACS ENERGY LETTERS 2021; 6:581-587. [PMID: 33614964 PMCID: PMC7887873 DOI: 10.1021/acsenergylett.0c02448] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2020] [Accepted: 01/11/2021] [Indexed: 05/31/2023]
Abstract
Cesium lead halides have intrinsically unstable crystal lattices and easily transform within perovskite and nonperovskite structures. In this work, we explore the conversion of the perovskite CsPbBr3 into Cs4PbBr6 in the presence of PbS at 450 °C to produce doped nanocrystal-based composites with embedded Cs4PbBr6 nanoprecipitates. We show that PbBr2 is extracted from CsPbBr3 and diffuses into the PbS lattice with a consequent increase in the concentration of free charge carriers. This new doping strategy enables the adjustment of the density of charge carriers between 1019 and 1020 cm-3, and it may serve as a general strategy for doping other nanocrystal-based semiconductors.
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Affiliation(s)
- Mariano Calcabrini
- Institute
of Science and Technology Austria, Klosterneuburg 3400, Austria
| | - Aziz Genç
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Catalonia, Spain
- Materials
Science and Engineering Department, Izmir
Institute of Technology, İzmir, Turkey
| | - Yu Liu
- Institute
of Science and Technology Austria, Klosterneuburg 3400, Austria
| | - Tobias Kleinhanns
- Institute
of Science and Technology Austria, Klosterneuburg 3400, Austria
| | - Seungho Lee
- Institute
of Science and Technology Austria, Klosterneuburg 3400, Austria
| | - Dmitry N. Dirin
- Department
of Chemistry and Applied Biosciences, ETH
Zürich, Zurich CH-8093, Switzerland
- Empa-Swiss
Federal Laboratories for Materials Science and Technology, Zurich CH-8600, Switzerland
| | - Quinten A. Akkerman
- Department
of Chemistry and Applied Biosciences, ETH
Zürich, Zurich CH-8093, Switzerland
- Empa-Swiss
Federal Laboratories for Materials Science and Technology, Zurich CH-8600, Switzerland
| | - Maksym V. Kovalenko
- Department
of Chemistry and Applied Biosciences, ETH
Zürich, Zurich CH-8093, Switzerland
- Empa-Swiss
Federal Laboratories for Materials Science and Technology, Zurich CH-8600, Switzerland
| | - Jordi Arbiol
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona 08193, Catalonia, Spain
- ICREA, Pg. Lluís Companys 23, Barcelona 08010, Catalonia, Spain
| | - Maria Ibáñez
- Institute
of Science and Technology Austria, Klosterneuburg 3400, Austria
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24
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Grotevent MJ, Hail CU, Yakunin S, Bachmann D, Kara G, Dirin DN, Calame M, Poulikakos D, Kovalenko MV, Shorubalko I. Temperature-Dependent Charge Carrier Transfer in Colloidal Quantum Dot/Graphene Infrared Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:848-856. [PMID: 33350310 DOI: 10.1021/acsami.0c15226] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Colloidal PbS quantum dot (QD)/graphene hybrid photodetectors are emerging QD technologies for affordable infrared light detectors. By interfacing the QDs with graphene, the photosignal of these detectors is amplified, leading to high responsivity values. While these detectors have been mainly operated at room temperature, low-temperature operation is required for extending their spectral sensitivity beyond a wavelength of 3 μm. Here, we unveil the temperature-dependent response of PbS QD/graphene phototransistors by performing steady-state and time-dependent measurements over a large temperature range of 80-300 K. We find that the temperature dependence of photoinduced charge carrier transfer from the QD layer to graphene is (i) not impeded by freeze-out of the (Schottky-like) potential barrier at low temperatures, (ii) tremendously sensitive to QD surface states (surface oxidation), and (iii) minimally affected by the ligand exposure time and QD layer thickness. Moreover, the specific detectivity of our detectors increases with cooling, with a maximum measured specific detectivity of at least 1010 Jones at a wavelength of 1280 nm and a temperature of 80 K, which is an order of magnitude larger compared to the corresponding room temperature value. The temperature- and gate voltage-dependent characterization presented here constitutes an important step in expanding our knowledge of charge transfer at interfaces of low-dimensional materials and toward the realization of next-generation optoelectronic devices.
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Affiliation(s)
- Matthias J Grotevent
- Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Claudio U Hail
- Department of Mechanical and Process Engineering, ETH Zurich, Sonneggstrasse 3, CH-8092 Zurich, Switzerland
| | - Sergii Yakunin
- Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Dominik Bachmann
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Gökhan Kara
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Dmitry N Dirin
- Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Michel Calame
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - Dimos Poulikakos
- Department of Mechanical and Process Engineering, ETH Zurich, Sonneggstrasse 3, CH-8092 Zurich, Switzerland
| | - Maksym V Kovalenko
- Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir Prelog Weg 1, CH-8093 Zurich, Switzerland
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Ivan Shorubalko
- Empa-Swiss Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
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25
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Mukherjee A, Dutta P, Bhattacharyya B, Rajasekar GP, Simlandy AK, Pandey A. Ultrafast spectroscopic investigation of the artificial photosynthetic activity of CuAlS
2
/ZnS quantum dots. NANO SELECT 2021. [DOI: 10.1002/nano.202000219] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022] Open
Affiliation(s)
- Arpita Mukherjee
- Indian Institute of Science Solid State and Structural Chemistry Unit Bangalore 560012 India
| | - Pranab Dutta
- Indian Institute of Science Solid State and Structural Chemistry Unit Bangalore 560012 India
| | - Biswajit Bhattacharyya
- Indian Institute of Science Solid State and Structural Chemistry Unit Bangalore 560012 India
| | - Guru Pratheep Rajasekar
- Indian Institute of Science Solid State and Structural Chemistry Unit Bangalore 560012 India
| | - Amit Kumar Simlandy
- Department of Organic Chemistry Indian Institute of Science Bangalore 560012 India
| | - Anshu Pandey
- Indian Institute of Science Solid State and Structural Chemistry Unit Bangalore 560012 India
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26
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Khabibullin AR, Efros AL, Erwin SC. The role of ligands in electron transport in nanocrystal solids. NANOSCALE 2020; 12:23028-23035. [PMID: 33200157 DOI: 10.1039/d0nr06892f] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We investigate theoretically the transport of electrons and holes in crystalline solids consisting of three-dimensional arrays of semiconductor nanocrystals passivated by two types of organic ligands-linear chain carboxylates and functionalized aromatic cinnamates. We focus on a critical quantity in transport: the quantum-mechanical overlap of the strongly confined electron and hole wavefunctions on neighboring nanocrystals. Using results from density-functional-theory (DFT) calculations, we construct a one-dimensional model system whose analytic wavefunctions reproduce the full DFT numerical overlap values. By investigating the analytic behavior of this model, we reveal several important features of electron transport. The most significant is that the wavefunction overlap decays exponentially with ligand length, with a characteristic decay length that depends primarily on properties of the ligand and is almost independent of the size and type of nanocrystal. Functionalization of the ligands can also affect the overlap by changing the height of the tunneling barrier. The physically transparent analytic expressions we obtain for the wavefunction overlap and its decay length should be useful for future efforts to control transport in nanocrystal solids.
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Affiliation(s)
- Artem R Khabibullin
- NRC Research Associate, Resident at Center for Computational Materials Science, Naval Research Laboratory, Washington, DC 20375, USA
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27
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Volk S, Yazdani N, Wood V. Manipulating Electronic Structure from the Bottom-Up: Colloidal Nanocrystal-Based Semiconductors. J Phys Chem Lett 2020; 11:9255-9264. [PMID: 32931296 DOI: 10.1021/acs.jpclett.0c01417] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Semiconductors assembled from colloidal nanocrystals (NCs) are often described in the same terms as their single-crystalline counterparts with references to conduction and valence band edges, doping densities, and electronic defects; however, how and why semiconductor properties manifest in these bottom-up fabricated thin films can be fundamentally different. In this Perspective, we describe the factors that determine the electronic structure in colloidal NC-based semiconductors, and comment on approaches for measuring or calculating this electronic structure. Finally, we discuss future directions for these semiconductors and highlight their potential to bridge the divide between localized quantum effects and long-range transport in thin films.
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Affiliation(s)
- Sebastian Volk
- Department of Information Technology and Electrical Engineering, ETH Zurich, Zurich, Switzerland 8092
| | - Nuri Yazdani
- Department of Information Technology and Electrical Engineering, ETH Zurich, Zurich, Switzerland 8092
| | - Vanessa Wood
- Department of Information Technology and Electrical Engineering, ETH Zurich, Zurich, Switzerland 8092
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28
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Harvey SM, Houck DW, Kirschner MS, Flanders NC, Brumberg A, Leonard AA, Watkins NE, Chen LX, Dichtel WR, Zhang X, Korgel BA, Wasielewski MR, Schaller RD. Transient Lattice Response upon Photoexcitation in CuInSe 2 Nanocrystals with Organic or Inorganic Surface Passivation. ACS NANO 2020; 14:13548-13556. [PMID: 32915540 DOI: 10.1021/acsnano.0c05553] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
CuInSe2 nanocrystals offer promise for optoelectronics including thin-film photovoltaics and printed electronics. Additive manufacturing methods such as photonic curing controllably sinter particles into quasi-continuous films and offer improved device performance. To gain understanding of nanocrystal response under such processing conditions, we investigate impacts of photoexcitation on colloidal nanocrystal lattices via time-resolved X-ray diffraction. We probe three sizes of particles and two capping ligands (oleylamine and inorganic S2-) to evaluate resultant crystal lattice temperature, phase stability, and thermal dissipation. Elevated fluences produce heating and loss of crystallinity, the onset of which exhibits particle size dependence. We find size-dependent recrystallization and cooling lifetimes ranging from 90 to 200 ps with additional slower cooling on the nanosecond time scale. Sulfide-capped nanocrystals show faster recrystallization and cooling compared to oleylamine-capped nanocrystals. Using these lifetimes, we find interfacial thermal conductivities from 3 to 28 MW/(m2 K), demonstrating that ligand identity strongly influences thermal dissipation.
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Affiliation(s)
- Samantha M Harvey
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Institute for Sustainability and Energy at Northwestern, Northwestern University, Evanston, Illinois 60208, United States
| | - Daniel W Houck
- McKetta Department of Chemical Engineering, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Matthew S Kirschner
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Nathan C Flanders
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Alexandra Brumberg
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Ariel A Leonard
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Chemical Science and Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Nicolas E Watkins
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Lin X Chen
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Chemical Science and Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - William R Dichtel
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Xiaoyi Zhang
- X-ray Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Brian A Korgel
- McKetta Department of Chemical Engineering, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Michael R Wasielewski
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Institute for Sustainability and Energy at Northwestern, Northwestern University, Evanston, Illinois 60208, United States
| | - Richard D Schaller
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Institute for Sustainability and Energy at Northwestern, Northwestern University, Evanston, Illinois 60208, United States
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
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29
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Maier A, Lapkin D, Mukharamova N, Frech P, Assalauova D, Ignatenko A, Khubbutdinov R, Lazarev S, Sprung M, Laible F, Löffler R, Previdi N, Bräuer A, Günkel T, Fleischer M, Schreiber F, Vartanyants IA, Scheele M. Structure-Transport Correlation Reveals Anisotropic Charge Transport in Coupled PbS Nanocrystal Superlattices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e2002254. [PMID: 32725688 DOI: 10.1002/adma.202002254] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2020] [Revised: 06/17/2020] [Indexed: 06/11/2023]
Abstract
The assembly of colloidal semiconductive nanocrystals into highly ordered superlattices predicts novel structure-related properties by design. However, those structure-property relationships, such as charge transport depending on the structure or even directions of the superlattice, have remained unrevealed so far. Here, electric transport measurements and X-ray nanodiffraction are performed on self-assembled lead sulfide nanocrystal superlattices to investigate direction-dependent charge carrier transport in microscopic domains of these materials. By angular X-ray cross-correlation analysis, the structure and orientation of individual superlattices is determined, which are directly correlated with the electronic properties of the same microdomains. By that, strong evidence for the effect of superlattice crystallinity on the electric conductivity is found. Further, anisotropic charge transport in highly ordered monocrystalline domains is revealed, which is attributed to the dominant effect of shortest interparticle distance. This implies that transport anisotropy should be a general feature of weakly coupled nanocrystal superlattices.
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Affiliation(s)
- Andre Maier
- Institute of Physical and Theoretical Chemistry, University of Tuebingen, Auf der Morgenstelle 18, Tuebingen, 72076, Germany
- Center for Light-Matter Interaction, Sensors & Analytics LISA+, University of Tuebingen, Auf der Morgenstelle 15, Tuebingen, 72076, Germany
| | - Dmitry Lapkin
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, Hamburg, 22607, Germany
| | | | - Philipp Frech
- Institute of Physical and Theoretical Chemistry, University of Tuebingen, Auf der Morgenstelle 18, Tuebingen, 72076, Germany
| | - Dameli Assalauova
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, Hamburg, 22607, Germany
| | - Alexandr Ignatenko
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, Hamburg, 22607, Germany
| | - Ruslan Khubbutdinov
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, Hamburg, 22607, Germany
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow, 115409, Russia
| | - Sergey Lazarev
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, Hamburg, 22607, Germany
- National Research Tomsk Polytechnic University (TPU), pr. Lenina 30, Tomsk, 634050, Russia
| | - Michael Sprung
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, Hamburg, 22607, Germany
| | - Florian Laible
- Center for Light-Matter Interaction, Sensors & Analytics LISA+, University of Tuebingen, Auf der Morgenstelle 15, Tuebingen, 72076, Germany
- Institute of Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen, 72076, Germany
| | - Ronny Löffler
- Center for Light-Matter Interaction, Sensors & Analytics LISA+, University of Tuebingen, Auf der Morgenstelle 15, Tuebingen, 72076, Germany
| | - Nicolas Previdi
- Institute of Physical and Theoretical Chemistry, University of Tuebingen, Auf der Morgenstelle 18, Tuebingen, 72076, Germany
| | - Annika Bräuer
- Center for Light-Matter Interaction, Sensors & Analytics LISA+, University of Tuebingen, Auf der Morgenstelle 15, Tuebingen, 72076, Germany
- Institute of Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen, 72076, Germany
| | - Thomas Günkel
- Institute of Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen, 72076, Germany
| | - Monika Fleischer
- Center for Light-Matter Interaction, Sensors & Analytics LISA+, University of Tuebingen, Auf der Morgenstelle 15, Tuebingen, 72076, Germany
- Institute of Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen, 72076, Germany
| | - Frank Schreiber
- Center for Light-Matter Interaction, Sensors & Analytics LISA+, University of Tuebingen, Auf der Morgenstelle 15, Tuebingen, 72076, Germany
- Institute of Applied Physics, University of Tuebingen, Auf der Morgenstelle 10, Tuebingen, 72076, Germany
| | - Ivan A Vartanyants
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, Hamburg, 22607, Germany
- National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow, 115409, Russia
| | - Marcus Scheele
- Institute of Physical and Theoretical Chemistry, University of Tuebingen, Auf der Morgenstelle 18, Tuebingen, 72076, Germany
- Center for Light-Matter Interaction, Sensors & Analytics LISA+, University of Tuebingen, Auf der Morgenstelle 15, Tuebingen, 72076, Germany
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