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Zhang D, Ge C, Wang Y, Xia Y, Zhao H, Yao C, Chen Y, Ma C, Tong Q, Pan A, Wang X. Enhancing Layer-Engineered Interlayer Exciton Emission and Valley Polarization in van der Waals Heterostructures via Strain. ACS NANO 2024; 18:17672-17680. [PMID: 38920321 DOI: 10.1021/acsnano.4c02377] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Layer-engineered interlayer excitons from heterostructures of transition-metal dichalcogenides (TMDCs) exhibit a rich variety of emissive states and intriguing valley spin-selection rules, the effective modulation of which is crucial for excitonic physics and related device applications. Strain or high pressure provides the possibility to tune the energy of the interlayer excitons; however, the reported emission intensity is substantially quenched, which greatly limits their practical application in optoelectronic devices. Here, via applying uniaxial strain based on polyvinyl alcohol (PVA) encapsulation technique, we report enhanced layer-engineered interlayer exciton emission intensity with largely modulated emission energy in WSe2/WS2 heterobilayer and heterotrilayer. Both momentum-direct and momentum-indirect interlayer excitons were observed, and their emission energies show an opposite shift tendency upon applied strain, which agrees with our DFT calculations. We further demonstrate that intralayer and interlayer exciton states with low phonon interactions can be modulated through the mechanical strain applied to the PVA substrate at low temperatures. Due to strain-induced breaking of the 3-fold rotational symmetry, we observe the enhanced valley polarization of interlayer excitons. Our study contributes to the understanding and modulation of the optical properties of interlayer excitons, which could be exploited for optoelectronic device applications.
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Affiliation(s)
- Danliang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Cuihuang Ge
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Youwen Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Yang Xia
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Haipeng Zhao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Qingjun Tong
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
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Vashishtha P, Abidi IH, Giridhar SP, Verma AK, Prajapat P, Bhoriya A, Murdoch BJ, Tollerud JO, Xu C, Davis JA, Gupta G, Walia S. CVD-Grown Monolayer MoS 2 and GaN Thin Film Heterostructure for a Self-Powered and Bidirectional Photodetector with an Extended Active Spectrum. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31294-31303. [PMID: 38838350 DOI: 10.1021/acsami.4c03902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Photodetector technology has evolved significantly over the years with the emergence of new active materials. However, there remain trade-offs between spectral sensitivity, operating energy, and, more recently, an ability to harbor additional features such as persistent photoconductivity and bidirectional photocurrents for new emerging application areas such as switchable light imaging and filter-less color discrimination. Here, we demonstrate a self-powered bidirectional photodetector based on molybdenum disulfide/gallium nitride (MoS2/GaN) epitaxial heterostructure. This fabricated detector exhibits self-powered functionality and achieves detection in two discrete wavelength bands: ultraviolet and visible. Notably, it attains a peak responsivity of 631 mAW-1 at a bias of 0V. The device's response to illumination at these two wavelengths is governed by distinct mechanisms, activated under applied bias conditions, thereby inducing a reversal in the polarity of the photocurrent. This work underscores the feasibility of self-powered and bidirectional photocurrent detection but also opens new vistas for technological advancements for future optoelectronic, neuromorphic, and sensing applications.
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Affiliation(s)
- Pargam Vashishtha
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Irfan H Abidi
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Sindhu P Giridhar
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Ajay K Verma
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Pukhraj Prajapat
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Ankit Bhoriya
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Billy J Murdoch
- RMIT Microscopy and Microanalysis Facility, RMIT University, Melbourne 3000, Australia
| | - Jonathan O Tollerud
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Chenglong Xu
- Micro Nano Research Facility, RMIT University, Melbourne 3000, Australia
| | - Jeff A Davis
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Govind Gupta
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Sumeet Walia
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
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3
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Pan B, Dou Z, Su M, Li Y, Wu J, Chang W, Wang P, Zhang L, Zhao L, Zhao M, Wang SD. Direct Selective Epitaxy of 2D Sb 2Te 3 onto Monolayer WS 2 for Vertical p-n Heterojunction Photodetectors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:884. [PMID: 38786841 PMCID: PMC11124104 DOI: 10.3390/nano14100884] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Revised: 05/10/2024] [Accepted: 05/13/2024] [Indexed: 05/25/2024]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDs) possess appropriate bandgaps and interact via van der Waals (vdW) forces between layers, effectively overcoming lattice compatibility challenges inherent in traditional heterojunctions. This property facilitates the creation of heterojunctions with customizable bandgap alignments. However, the prevailing method for creating heterojunctions with 2D-TMDs relies on the low-efficiency technique of mechanical exfoliation. Sb2Te3, recognized as a notable p-type semiconductor, emerges as a versatile component for constructing diverse vertical p-n heterostructures with 2D-TMDs. This study presents the successful large-scale deposition of 2D Sb2Te3 onto inert mica substrates, providing valuable insights into the integration of Sb2Te3 with 2D-TMDs to form heterostructures. Building upon this initial advancement, a precise epitaxial growth method for Sb2Te3 on pre-existing WS2 surfaces on SiO2/Si substrates is achieved through a two-step chemical vapor deposition process, resulting in the formation of Sb2Te3/WS2 heterojunctions. Finally, the development of 2D Sb2Te3/WS2 optoelectronic devices is accomplished, showing rapid response times, with a rise/decay time of 305 μs/503 μs, respectively.
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Affiliation(s)
- Baojun Pan
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macao 999078, China
| | - Zhenjun Dou
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials & Industry Technology, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Mingming Su
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macao 999078, China
| | - Ya Li
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macao 999078, China
| | - Jialing Wu
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macao 999078, China
| | - Wanwan Chang
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macao 999078, China
| | - Peijian Wang
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials & Industry Technology, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Lijie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials & Industry Technology, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Lei Zhao
- School of Electronic Engineering, Lanzhou City University, Lanzhou 730070, China
| | - Mei Zhao
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials & Industry Technology, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Sui-Dong Wang
- Macao Institute of Materials Science and Engineering (MIMSE), MUST-SUDA Joint Research Center for Advanced Functional Materials, Macau University of Science and Technology, Taipa, Macao 999078, China
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Zhong J, Zhou D, Bai Q, Liu C, Fan X, Zhang H, Li C, Jiang R, Zhao P, Yuan J, Li X, Zhan G, Yang H, Liu J, Song X, Zhang J, Huang X, Zhu C, Zhu C, Wang L. Growth of millimeter-sized 2D metal iodide crystals induced by ion-specific preference at water-air interfaces. Nat Commun 2024; 15:3185. [PMID: 38609368 PMCID: PMC11014996 DOI: 10.1038/s41467-024-47241-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/14/2024] [Accepted: 03/25/2024] [Indexed: 04/14/2024] Open
Abstract
Conventional liquid-phase methods lack precise control in synthesizing and processing materials with macroscopic sizes and atomic thicknesses. Water interfaces are ubiquitous and unique in catalyzing many chemical reactions. However, investigations on two-dimensional (2D) materials related to water interfaces remain limited. Here we report the growth of millimeter-sized 2D PbI2 single crystals at the water-air interface. The growth mechanism is based on an inherent ion-specific preference, i.e. iodine and lead ions tend to remain at the water-air interface and in bulk water, respectively. The spontaneous accumulation and in-plane arrangement within the 2D crystal of iodide ions at the water-air interface leads to the unique crystallization of PbI2 as well as other metal iodides. In particular, PbI2 crystals can be customized to specific thicknesses and further transformed into millimeter-sized mono- to few-layer perovskites. Additionally, we have developed water-based techniques, including water-soaking, spin-coating, water-etching, and water-flow-assisted transfer to recycle, thin, pattern, and position PbI2, and subsequently, perovskites. Our water-interface mediated synthesis and processing methods represents a significant advancement in achieving simple, cost-effective, and energy-efficient production of functional materials and their integrated devices.
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Affiliation(s)
- Jingxian Zhong
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, 210096, China
| | - Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, 210096, China
| | - Qi Bai
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Chao Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, 210096, China
| | - Xinlian Fan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Hehe Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Congzhou Li
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Ran Jiang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Peiyi Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiaxiao Yuan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xiaojiao Li
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China
| | - Guixiang Zhan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Hongyu Yang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jing Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xuefen Song
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Junran Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xiao Huang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Integrated Circuits, Southeast University, Nanjing, 210096, China
| | - Chongqin Zhu
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing, 100875, China.
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China.
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Chen X, Huang Y, Deng Z, Zhao H, Ma F, Zhang J, Wei X. The strain regulated physical properties of PbI 2/g-C 3N 4for potential optoelectronic device. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:255704. [PMID: 38484393 DOI: 10.1088/1361-648x/ad33ef] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Accepted: 03/14/2024] [Indexed: 03/28/2024]
Abstract
The van der Waals (vdW) heterostructures of Z-scheme PbI2/g-C3N4with an indirect bandgap have gained much attention in recent years due to their unique properties and potential applications in various fields. However, the optoelectronic characteristics and strain-modulated effects are not yet fully understood. By considering this, six stacking models of PbI2/g-C3N4are proposed and the stablest structure is selected for further investigation. The uniaxial and biaxial strains (-10%-10%) regulated band arrangement, charge distribution, optical absorption in the framework of density functional theory are systematically explored. The compressive uniaxial strain of -8.55% changes the band type from II→I, and the biaxial strains of -7.12%, -5.25%, 8.91% change the band type in a way of II→I→II→I, acting like the 'band-pass filter'. The uniaxial strains except -10% compressive strain, and the -6%, -4%, 2%, 4%, 10% biaxial strains will enhance the light absorption of PbI2/g-C3N4. The exerted strains on PbI2/g-C3N4generate different power conversion efficiency (ηPCE) values ranging from 3.64% to 25.61%, and the maximumηPCEis generated by -6% biaxial strain. The results of this study will pave the way for the development of new electronic and optoelectronic materials with customized properties in photocatalytic field and optoelectronic devices.
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Affiliation(s)
- Xiunan Chen
- School of Physics & Information Technology, Shaanxi Normal University, Xi'an 710119, Shaanxi, People's Republic of China
| | - Yuhong Huang
- School of Physics & Information Technology, Shaanxi Normal University, Xi'an 710119, Shaanxi, People's Republic of China
| | - Zunyi Deng
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, Beijing, People's Republic of China
| | - Haili Zhao
- School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, Henan, People's Republic of China
| | - Fei Ma
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China
| | - Jianmin Zhang
- School of Physics & Information Technology, Shaanxi Normal University, Xi'an 710119, Shaanxi, People's Republic of China
| | - Xiumei Wei
- School of Physics & Information Technology, Shaanxi Normal University, Xi'an 710119, Shaanxi, People's Republic of China
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6
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Zhao Z, Zhang T, Yue S, Wang P, Bao Y, Zhan S. Spin Polarization: A New Frontier in Efficient Photocatalysis for Environmental Purification and Energy Conversion. Chemphyschem 2024; 25:e202300726. [PMID: 38059760 DOI: 10.1002/cphc.202300726] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Revised: 11/28/2023] [Accepted: 12/01/2023] [Indexed: 12/08/2023]
Abstract
As a promising strategy to improve photocatalytic efficiency, spin polarization has attracted enormous attention in recent years, which could be involved in various steps of photoreaction. The Pauli repulsion principle and the spin selection rule dictate that the behavior of two electrons in a spatial eigenstate is based on their spin states, and this fact opens up a new avenue for manipulating photocatalytic efficiency. In this review, recent advances in modulating the photocatalytic activity with spin polarization are systematically summarized. Fundamental insights into the influence of spin-polarization effects on photon absorption, carrier separation, and migration, and the behaviors of reaction-related substances from the photon uptake to reactant desorption are highlighted and discussed in detail, and various photocatalytic applications for environmental purification and energy conversion are presented. This review is expected to deliver a timely overview of the recent developments in spin-polarization-modulated photocatalysis for environmental purification and energy conversion in terms of their practical applications.
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Affiliation(s)
- Zhiyong Zhao
- MOE Key Laboratory of Pollution Processes and Environmental Criteria, Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Tao Zhang
- MOE Key Laboratory of Pollution Processes and Environmental Criteria, Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Shuai Yue
- MOE Key Laboratory of Pollution Processes and Environmental Criteria, Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Pengfei Wang
- MOE Key Laboratory of Pollution Processes and Environmental Criteria, Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Yueping Bao
- MOE Key Laboratory of Pollution Processes and Environmental Criteria, Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
| | - Sihui Zhan
- MOE Key Laboratory of Pollution Processes and Environmental Criteria, Tianjin Key Laboratory of Environmental Remediation and Pollution Control, College of Environmental Science and Engineering, Nankai University, Tianjin, 300350, P. R. China
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7
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Liu C, Pan J, Yuan Q, Zhu C, Liu J, Ge F, Zhu J, Xie H, Zhou D, Zhang Z, Zhao P, Tian B, Huang W, Wang L. Highly Reliable Van Der Waals Memory Boosted by a Single 2D Charge Trap Medium. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2305580. [PMID: 37882079 DOI: 10.1002/adma.202305580] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/10/2023] [Revised: 10/11/2023] [Indexed: 10/27/2023]
Abstract
Charge trap materials that can store carriers efficiently and controllably are desired for memory applications. 2D materials are promising for highly compacted and reliable memory mainly due to their ease of constructing atomically uniform interfaces, however, remain unexplored as being charge trap media. Here it is discovered that 2D semiconducting PbI2 is an excellent charge trap material for nonvolatile memory and artificial synapses. It is simple to construct PbI2 -based charge trap devices since no complicated synthesis or additional defect manufacturing are required. As a demonstration, MoS2 /PbI2 device exhibits a large memory window of 120 V, fast write speed of 5 µs, high on-off ratio around 106 , multilevel memory of over 8 distinct states, high reliability with endurance up to 104 cycles and retention over 1.2 × 104 s. It is envisioned that PbI2 with ionic activity caused by the natively formed iodine vacancies is unique to combine with unlimited 2D materials for versatile van der Waals devices with high-integration and multifunctionality.
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Affiliation(s)
- Chao Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Jie Pan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Qihui Yuan
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Lab of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing, 210096, China
| | - Jianquan Liu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Feixiang Ge
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jijie Zhu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Haitao Xie
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Zicheng Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Peiyi Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Bobo Tian
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, China
| | - Wei Huang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
- Frontiers Science Center for Flexible Electronics (FSCFE), Key Laboratory of Flexible Electronics (KLOFE), Shaanxi Institute of Flexible Electronics (SIFE), Institute of Flexible Electronics (IFE), North-Western Polytechnical University (NPU), Xi'an, 710072, China
- School of Flexible Electronics (SoFE) & State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangdong, 518107, China
- State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
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8
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Lee H, Ma S, Oh S, Tan J, Lee CU, Son J, Park YS, Yun J, Jang G, Moon J. Chirality-Induced Spin Selectivity of Chiral 2D Perovskite Enabling Efficient Spin-Dependent Oxygen Evolution Reaction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2304166. [PMID: 37282813 DOI: 10.1002/smll.202304166] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2023] [Indexed: 06/08/2023]
Abstract
The sluggish and complex multi-step oxygen evolution reaction remains an obstacle to bias-free photoelectrochemical water-splitting systems. Several theoretical studies have suggested that spin-aligned intermediate radicals can significantly enhance the kinetic rates for oxygen generation. Herein, it is reported that the chirality-induced spin selectivity phenomena can become an impressive approach by adopting chiral 2D organic-inorganic hybrid perovskites as a spin-filtering layer on the photoanode. This chiral 2D perovskite-based water-splitting device achieves enhanced oxygen evolution performance with a reduced overpotential of 0.14 V, high fill factor, and 230% increased photocurrent compared to a device without a spin-filtering layer. Moreover, combined with a superhydrophobic patterning strategy, this device realizes excellent operational stability by sustaining ≈90% of the initial photocurrent, even after 10 h.
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Affiliation(s)
- Hyungsoo Lee
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Sunihl Ma
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul, 03722, Republic of Korea
- Department of Chemical Engineering, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Seungtae Oh
- Carbon Neutral Technology R&D Department, Korea Institute of Industrial Technology, 89 Yangdaegiro-gil, Seobuk-gu, Cheonan-si, Chungcheongnam-do, 31056, Republic of Korea
| | - Jeiwan Tan
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Chan Uk Lee
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Jaehyun Son
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Young Sun Park
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Juwon Yun
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Gyumin Jang
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul, 03722, Republic of Korea
| | - Jooho Moon
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro Seodaemun-gu, Seoul, 03722, Republic of Korea
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9
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Wang Z, Zhang H, Wang W, Tan C, Chen J, Yin S, Zhang H, Zhu A, Li G, Du Y, Wang S, Liu F, Li L. Type-I Heterostructure Based on WS 2/PtS 2 for High-Performance Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:37926-37936. [PMID: 35961962 DOI: 10.1021/acsami.2c08827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
van der Waals (vdW) heterodiodes composed of two-dimensional (2D) layered materials led to a new prospect in photoelectron diodes and photovoltaic devices. Existing studies have shown that Type-I heterostructures have great potential to be used as photodetectors; however, the tunneling phenomena in Type-I heterostructures have not been fully revealed. Herein, a highly efficient nn+ WS2/PtS2 Type-I vdW heterostructure photodiode is constructed. The device shows an ultrahigh reverse rectification ratio of 105 owing to the transmission barrier-induced low reverse current. A unilateral depletion region is formed on WS2, which inhibits the recombination of carriers at the interface and makes the external quantum efficiency (EQE) of the device reach 67%. Due to the tunneling mechanism of the device, which allows the co-existence of a large photocurrent and a low dark current, this device achieves a light on/off ratio of over 105. In addition, this band design allows the device to maintain a high detectivity of 4.53 × 1010 Jones. Our work provides some new ideas for exploring new high-efficiency photodiodes.
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Affiliation(s)
- Zihan Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Hui Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Weike Wang
- Nanchang Institute of Technology, Nanchang 330044, P. R. China
| | - Chaoyang Tan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Jiawang Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Shiqi Yin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Hanlin Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Ankang Zhu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Gang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Yuchen Du
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Shaotian Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Fengguang Liu
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
| | - Liang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
- University of Science and Technology of China, Hefei 230026, P. R. China
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10
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Ramos M, Marques-Moros F, Esteras DL, Mañas-Valero S, Henríquez-Guerra E, Gadea M, Baldoví JJ, Canet-Ferrer J, Coronado E, Calvo MR. Photoluminescence Enhancement by Band Alignment Engineering in MoS 2/FePS 3 van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2022; 14:33482-33490. [PMID: 35839147 PMCID: PMC9335528 DOI: 10.1021/acsami.2c05464] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Accepted: 07/04/2022] [Indexed: 05/08/2023]
Abstract
Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled changes to the environment and the chemical potential of the material. However, a drastic emission quench has been generally observed when TMDs are stacked in van der Waals heterostructures, which often favor the nonradiative recombination of photocarriers. Herein, we achieve an enhancement of the photoluminescence of single-layer MoS2 on top of van der Waals FePS3. The optimal energy band alignment of this heterostructure preserves light emission of MoS2 against nonradiative interlayer recombination processes and favors the charge transfer from MoS2, an n-type semiconductor, to FePS3, a p-type narrow-gap semiconductor. The strong depletion of carriers in the MoS2 layer is evidenced by a dramatic increase in the spectral weight of neutral excitons, which is strongly modulated by the thickness of the FePS3 underneath, leading to the increase of photoluminescence intensity. The present results demonstrate the potential for the rational design of van der Waals heterostructures with advanced optoelectronic properties.
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Affiliation(s)
- Maria Ramos
- Departamento
de Física Aplicada, Universidad de
Alicante, Alicante 03690, Spain
| | | | - Dorye L. Esteras
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Paterna 46980, Spain
| | - Samuel Mañas-Valero
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Paterna 46980, Spain
| | | | - Marcos Gadea
- Departamento
de Física Aplicada, Universidad de
Alicante, Alicante 03690, Spain
| | - José J. Baldoví
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Paterna 46980, Spain
| | - Josep Canet-Ferrer
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Paterna 46980, Spain
| | - Eugenio Coronado
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Paterna 46980, Spain
| | - M. Reyes Calvo
- Departamento
de Física Aplicada, Universidad de
Alicante, Alicante 03690, Spain
- Instituto
Universitario de Materiales de Alicante (IUMA), Universidad de Alicante, Alicante 03690, Spain
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11
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Li J, Liang J, Yang X, Li X, Zhao B, Li B, Duan X. Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107059. [PMID: 35297544 DOI: 10.1002/smll.202107059] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Revised: 01/27/2022] [Indexed: 06/14/2023]
Abstract
2D van der Waals heterostructures (vdWHs) and superlattices (SLs) with exotic physical properties and applications for new devices have attracted immense interest. Compared to conventionally bonded heterostructures, the dangling-bond-free surface of 2D layered materials allows for the feasible integration of various materials to produce vdWHs without the requirements of lattice matching and processing compatibility. The quality of interfaces in artificially stacked vdWHs/vdWSLs and scalability of production remain among the major challenges in the field of 2D materials. Fortunately, bottom-up methods exhibit relatively high controllability and flexibility. The growth parameters, such as the temperature, precursors, substrate, and carrier gas, can be carefully and comprehensively controlled to produce high-quality interfaces and wafer-scale products of vdWHs/vdWSLs. This review focuses on three types of bottom-up methods for the assembly of vdWHs and vdWSLs with atomically clean and electronically sharp interfaces: chemical/physical vapor deposition, metal-organic chemical vapor deposition, and ultrahigh vacuum growth. These methods can intuitively illustrate the great flexibility and controllability of bottom-up methods for the preparation of vdWHs/vdWSLs. The latest progress in vdWHs and vdWSLs, related physical phenomena, and (opto)electronic devices are summarized. Finally, the authors discuss current challenges and future perspectives in the synthesis and application of vdWHs and vdWSLs.
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Affiliation(s)
- Jia Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Jingyi Liang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xiangdong Yang
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Xin Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bei Zhao
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
| | - Bo Li
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
- School of Physics and Electronics, Hunan University, Changsha, P. R. China
| | - Xidong Duan
- Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410012, P. R. China
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12
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Zhan G, Zhang J, Zhang L, Ou Z, Yang H, Qian Y, Zhang X, Xing Z, Zhang L, Li C, Zhong J, Yuan J, Cao Y, Zhou D, Chen X, Ma H, Song X, Zha C, Huang X, Wang J, Wang T, Huang W, Wang L. Stimulating and Manipulating Robust Circularly Polarized Photoluminescence in Achiral Hybrid Perovskites. NANO LETTERS 2022; 22:3961-3968. [PMID: 35507685 DOI: 10.1021/acs.nanolett.2c00482] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Circularly polarized light (CPL) is essential for optoelectronic and chiro-spintronic applications. Hybrid perovskites, as star optoelectronic materials, have demonstrated CPL activity, which is, however, mostly limited to chiral perovskites. Here, we develop a simple, general, and efficient strategy to stimulate CPL activity in achiral perovskites, which possess rich species, efficient luminescence, and tunable bandgaps. With the formation of van der Waals heterojunctions between chiral and achiral perovskites, a nonequilibrium spin population and thus CPL activity are realized in achiral perovskites by receiving spin-polarized electrons from chiral perovskites. The polarization degree of room-temperature CPL in achiral perovskites is at least one order of magnitude higher than in chiral ones. The CPL polarization degree and emission wavelengths of achiral perovskites can be flexibly designed by tuning chemical compositions, operating temperature, or excitation wavelengths. We anticipate that unlimited types of achiral perovskites can be endowed with CPL activity, benefiting their applications in integrated CPL sources and detectors.
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Affiliation(s)
- Guixiang Zhan
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Junran Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Linghai Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Zhenwei Ou
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Hongyu Yang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Yuchi Qian
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Xu Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Ziyue Xing
- Frontiers Science Center for Flexible Electronics, Key Laboratory of Flexible Electronics, Shaanxi Institute of Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Le Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Congzhou Li
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Jingxian Zhong
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Jiaxiao Yuan
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Yang Cao
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Dawei Zhou
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Huifang Ma
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Xuefen Song
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Chenyang Zha
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Xiao Huang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
| | - Ti Wang
- School of Physics and Technology, Center for Nanoscience and Nanotechnology, and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
- Frontiers Science Center for Flexible Electronics, Key Laboratory of Flexible Electronics, Shaanxi Institute of Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China
| | - Lin Wang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing 211816, China
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13
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Wang QH, Bedoya-Pinto A, Blei M, Dismukes AH, Hamo A, Jenkins S, Koperski M, Liu Y, Sun QC, Telford EJ, Kim HH, Augustin M, Vool U, Yin JX, Li LH, Falin A, Dean CR, Casanova F, Evans RFL, Chshiev M, Mishchenko A, Petrovic C, He R, Zhao L, Tsen AW, Gerardot BD, Brotons-Gisbert M, Guguchia Z, Roy X, Tongay S, Wang Z, Hasan MZ, Wrachtrup J, Yacoby A, Fert A, Parkin S, Novoselov KS, Dai P, Balicas L, Santos EJG. The Magnetic Genome of Two-Dimensional van der Waals Materials. ACS NANO 2022; 16:6960-7079. [PMID: 35442017 PMCID: PMC9134533 DOI: 10.1021/acsnano.1c09150] [Citation(s) in RCA: 68] [Impact Index Per Article: 34.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/15/2021] [Accepted: 02/23/2022] [Indexed: 05/23/2023]
Abstract
Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.
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Affiliation(s)
- Qing Hua Wang
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Amilcar Bedoya-Pinto
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, 46980 Paterna, Spain
| | - Mark Blei
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Avalon H. Dismukes
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Assaf Hamo
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Sarah Jenkins
- Twist
Group,
Faculty of Physics, University of Duisburg-Essen, Campus Duisburg, 47057 Duisburg, Germany
| | - Maciej Koperski
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Yu Liu
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Qi-Chao Sun
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
| | - Evan J. Telford
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Hyun Ho Kim
- School
of Materials Science and Engineering, Department of Energy Engineering
Convergence, Kumoh National Institute of
Technology, Gumi 39177, Korea
| | - Mathias Augustin
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Uri Vool
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John Harvard
Distinguished Science Fellows Program, Harvard
University, Cambridge, Massachusetts 02138, United States
| | - Jia-Xin Yin
- Laboratory
for Topological Quantum Matter and Spectroscopy, Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
| | - Lu Hua Li
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Alexey Falin
- Institute
for Frontier Materials, Deakin University, Geelong Waurn Ponds Campus, Waurn Ponds, Victoria 3216, Australia
| | - Cory R. Dean
- Department
of Physics, Columbia University, New York, New York 10027, United States
| | - Fèlix Casanova
- CIC nanoGUNE
BRTA, 20018 Donostia - San Sebastián, Basque
Country, Spain
- IKERBASQUE,
Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Richard F. L. Evans
- Department
of Physics, University of York, Heslington, York YO10 5DD, United Kingdom
| | - Mairbek Chshiev
- Université
Grenoble Alpes, CEA, CNRS, Spintec, 38000 Grenoble, France
- Institut
Universitaire de France, 75231 Paris, France
| | - Artem Mishchenko
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Cedomir Petrovic
- Condensed
Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Rui He
- Department
of Electrical and Computer Engineering, Texas Tech University, 910 Boston Avenue, Lubbock, Texas 79409, United
States
| | - Liuyan Zhao
- Department
of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109, United States
| | - Adam W. Tsen
- Institute
for Quantum Computing and Department of Chemistry, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Brian D. Gerardot
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Mauro Brotons-Gisbert
- SUPA, Institute
of Photonics and Quantum Sciences, Heriot-Watt
University, Edinburgh EH14 4AS, United Kingdom
| | - Zurab Guguchia
- Laboratory
for Muon Spin Spectroscopy, Paul Scherrer
Institute, CH-5232 Villigen PSI, Switzerland
| | - Xavier Roy
- Department
of Chemistry, Columbia University, New York, New York 10027, United States
| | - Sefaattin Tongay
- Materials
Science and Engineering, School for Engineering of Matter, Transport
and Energy, Arizona State University, Tempe, Arizona 85287, United States
| | - Ziwei Wang
- Department
of Physics and Astronomy, University of
Manchester, Manchester, M13 9PL, United Kingdom
- National
Graphene Institute, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - M. Zahid Hasan
- Materials
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
- Princeton
Institute for Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, United States
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
| | - Joerg Wrachtrup
- Physikalisches
Institut, University of Stuttgart, 70569 Stuttgart, Germany
- Max Planck
Institute for Solid State Research, 70569 Stuttgart, Germany
| | - Amir Yacoby
- Department
of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John A.
Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Albert Fert
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité
Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department
of Materials Physics UPV/EHU, 20018 Donostia - San Sebastián, Basque Country, Spain
| | - Stuart Parkin
- NISE
Department, Max Planck Institute of Microstructure
Physics, 06120 Halle, Germany
| | - Kostya S. Novoselov
- Institute
for Functional Intelligent Materials, National
University of Singapore, 117544 Singapore
| | - Pengcheng Dai
- Department
of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Luis Balicas
- National
High Magnetic Field Laboratory, Florida
State University, Tallahassee, Florida 32310, United States
- Department
of Physics, Florida State University, Tallahassee, Florida 32306, United States
| | - Elton J. G. Santos
- Institute
for Condensed Matter Physics and Complex Systems, School of Physics
and Astronomy, The University of Edinburgh, Edinburgh, EH9 3FD, United Kingdom
- Donostia
International Physics Center (DIPC), 20018 Donostia-San Sebastián, Basque Country, Spain
- Higgs Centre
for Theoretical Physics, The University
of Edinburgh, Edinburgh EH9 3FD, United Kingdom
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14
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Feng J, Li Y, Li J, Feng Q, Xin W, Liu W, Xu H, Liu Y. Engineering Relaxation-Paths of C-Exciton for Constructing Band Nesting Bypass in WS 2 Monolayer. NANO LETTERS 2022; 22:3699-3706. [PMID: 35481760 DOI: 10.1021/acs.nanolett.2c00509] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Transition-metal dichalcogenides exhibit strong photon absorption characteristics in the band nesting region (denoted as C-exciton) due to intrinsic van Hove singularities despite being atomically thin. However, because of unique parallel band structure and ineluctably unfavorable recombination process, only a small fraction of the hot carriers from C-excitons are converted into optically active band-edge excitons via inherent relaxation-paths. The resultant photoluminescence quantum yield (PLQY) is severely suppressed for the resonant excitation of C-exciton. To overcome this limitation, we have designed double type-I band alignments to construct a band nesting bypass in a monolayer WS2/CdS quantum dot heterostructure for cooling the C-excitons. Transient optical measurements confirmed that the hot carriers from the C-excitons were effectively transferred from WS2 to CdS with an efficiency of 50% and subsequently back to the WS2 band-edge to form A-excitons over an ultrafast subpicosecond time scale, accompanied by a record high PLQY of ∼11.1% for near-resonance C-exciton excitation.
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Affiliation(s)
- Jiying Feng
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Yuanzheng Li
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Jixiu Li
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Qiushi Feng
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Weizhen Liu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China
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15
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Zeng Z, Braun K, Ge C, Eberle M, Zhu C, Sun X, Yang X, Yi J, Liang D, Wang Y, Huang L, Luo Z, Li D, Pan A, Wang X. Picosecond electrical response in graphene/MoTe 2 heterojunction with high responsivity in the near infrared region. FUNDAMENTAL RESEARCH 2022; 2:405-411. [PMID: 38933404 PMCID: PMC11197620 DOI: 10.1016/j.fmre.2021.09.018] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/09/2021] [Revised: 08/28/2021] [Accepted: 09/21/2021] [Indexed: 11/19/2022] Open
Abstract
Understanding the fundamental charge carrier dynamics is of great significance for photodetectors with both high speed and high responsivity. Devices based on two-dimensional (2D) transition metal dichalcogenides can exhibit picosecond photoresponse speed. However, 2D materials naturally have low absorption, and when increasing thickness to gain higher responsivity, the response time usually slows to nanoseconds, limiting their photodetection performance. Here, by taking time-resolved photocurrent measurements, we demonstrated that graphene/MoTe2 van der Waals heterojunctions realize a fast 10 ps photoresponse time owing to the reduced average photocurrent drift time in the heterojunction, which is fundamentally distinct from traditional Dirac semimetal photodetectors such as graphene or Cd3As2 and implies a photodetection bandwidth as wide as 100 GHz. Furthermore, we found that an additional charge carrier transport channel provided by graphene can effectively decrease the photocurrent recombination loss to the entire device, preserving a high responsivity in the near-infrared region. Our study provides a deeper understanding of the ultrafast electrical response in van der Waals heterojunctions and offers a promising approach for the realization of photodetectors with both high responsivity and ultrafast electrical response.
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Affiliation(s)
- Zhouxiaosong Zeng
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Kai Braun
- Institute of Physical and Theoretical Chemistry and LISA+, University of Tübingen, Auf der Morgenstelle 18, Tübingen 72076, Germany
| | - Cuihuan Ge
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Martin Eberle
- Institute of Physical and Theoretical Chemistry and LISA+, University of Tübingen, Auf der Morgenstelle 18, Tübingen 72076, Germany
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Delang Liang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Yufan Wang
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Lanyu Huang
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Xiao Wang
- School of Physics and Electronics, Hunan University, Changsha 410082, China
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16
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Zhou X, Yu G. Preparation Engineering of Two-Dimensional Heterostructures via Bottom-Up Growth for Device Applications. ACS NANO 2021; 15:11040-11065. [PMID: 34264631 DOI: 10.1021/acsnano.1c02985] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional heterostructures with tremendous electronic and optoelectronic properties hold great promise for nanodevice integrations and applications owing to the wide tunable characteristics. Toward this end, developing construction strategies in allusion to large-scale production of high-quality heterostructures is critical. The mainstream preparation routes are representatively classified into two categories of top-down and bottom-up approaches. Nonetheless, the relatively low reproductivity and the limitation for lateral heterostructure formations of top-down methods at the present stage inherently impeded their further developments. To surmount these obstacles, assembling heterostructures via miscellaneous bottom-up preparation protocols has emerged as a potential solution, attributed to the controllability and clean interface. Three typical approaches of chemical/physical vapor deposition, solution synthesis, and growth under ultrahigh vacuum conditions have shown promise due to the possibilities for preparing heterostructures with predesigned structures, clean interfaces, and the like. Therefore, bottom-up preparation engineering of heterostructures in two dimensions for further device applications is of vital importance. Moreover, heterostructure integrations by these methods have experienced a period of flourishing development in the past few years. In this review, the classical bottom-up growth routes, characterization methods, and latest progress of diverse heterostructures and further device applications are overviewed. Finally, the challenges and opportunities are discussed.
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Affiliation(s)
- Xiahong Zhou
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Gui Yu
- Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- School of Chemical Sciences, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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17
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Yuan Z, Zhou Y, Qiao Z, Eng Aik C, Tu WC, Wu X, Chen YC. Stimulated Chiral Light-Matter Interactions in Biological Microlasers. ACS NANO 2021; 15:8965-8975. [PMID: 33988971 DOI: 10.1021/acsnano.1c01805] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Chiral light-matter interactions have emerged as a promising area in biophysics and quantum optics. Great progress in enhancing chiral light-matter interactions have been investigated through passive resonators or spontaneous emission. Nevertheless, the interaction between chiral biomolecules and stimulated emission remains unexplored. Here we introduce the concept of a biological chiral laser by amplifying chiral light-matter interactions in an active resonator through stimulated emission process. Green fluorescent proteins or chiral biomolecules encapsulated in Fabry-Perot microcavity served as the gain material while excited by either left-handed or right-handed circularly polarized pump laser. Owing to the nonlinear pump energy dependence of stimulated emission, significant enhancement of chiral light-matter interactions was demonstrated. Detailed experiments and theory revealed that a lasing dissymmetry factor is determined by molecular absorption dissymmetry factor at its excitation wavelength. Finally, chirality transfer was investigated under a stimulated emission process through resonance energy transfer. Our findings elucidate the mechanism of stimulated chiral light-matter interactions, providing better understanding of light-matter interaction in biophysics, chiral sensing, and quantum biophotonics.
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Affiliation(s)
- Zhiyi Yuan
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Yunke Zhou
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Zhen Qiao
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
| | - Chan Eng Aik
- Centre for Disruptive Photonic Technologies, TPI and SPMS, Nanyang Technological University, 21 Nanyang Link, 637371 Singapore
| | - Wei-Chen Tu
- Department of Electrical Engineering, National Cheng Kung University, Tainan City 701, Taiwan
| | - Xiaoqin Wu
- College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Yu-Cheng Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore
- School of Chemical and Biomedical Engineering, Nanyang Technological University, 62 Nanyang Drive, 637459 Singapore
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18
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Hannan Mousavi S, Simchi H. Spin polarization in lateral two-dimensional heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:145303. [PMID: 33498031 DOI: 10.1088/1361-648x/abdffd] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2020] [Accepted: 01/26/2021] [Indexed: 06/12/2023]
Abstract
In this work, we study the spin polarization in the MoS(Se)2-WS(Se)2transition metal dichalcogenide heterostructures by using the non-equilibrium Green's function method and a three-band tight-binding model near the edges of the first Brillouin zone. Although it has been shown that the structures have no significant spin polarization in a specific range of energy of electrons, by applying a transverse electric field in the sheet of the metal atoms, shedding light on the sample, and under a small bias voltage, a significant spin polarization in the structure could be created. Besides, by applying a suitable bias voltage between leads and applying the electric field, a noticeable spin polarization can be found even without shedding the light on the heterostructures.
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Affiliation(s)
- S Hannan Mousavi
- Electrical Engineering Department, Islamic Azad University, Central Tehran Branch, Tehran, Iran
| | - H Simchi
- Department of Physics, Iran University of Science and Technology, Narmak, Tehran 16844, Iran
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19
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Ye T, Zhou B, Liu Z, Li Y, Shen H, Ning CZ, Li D. Room-Temperature Exciton-Based Optoelectronic Switch. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2005918. [PMID: 33432674 DOI: 10.1002/smll.202005918] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2020] [Revised: 11/29/2020] [Indexed: 06/12/2023]
Abstract
Excitons, bound pairs of electrons and holes, could act as an intermediary between electronic signal processing and optical transmission, thus speeding up the interconnection of photoelectric communication. However, up to date, exciton-based logic devices such as switches that work at room temperature are still lacking. This work presents a prototype of a room-temperature optoelectronic switch based on excitons in WSe2 monolayer. The emission intensity of WSe2 stacked on Au and SiO2 substrates exhibits completely opposite behaviors upon applying gate voltages. Such observation can be ascribed to different doping behaviors of WSe2 caused by charge-transfer and chemical-doping effect at WSe2 /Au and WSe2 /SiO2 interfaces, respectively, together with the charge-drift effect. These interesting features can be utilized for optoelectronic switching, confirmed by the cyclic PL switching test for a long time exceeding 4000 s. This study offers a universal and reliable approach for the fabrication of exciton-based optoelectronic switches, which would be essential in integrated nanophotonics.
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Affiliation(s)
- Tong Ye
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Boxuan Zhou
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Zeyi Liu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Yongzhuo Li
- Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Frontier Science Center for Quantum Information, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology, Beijing, 100084, China
| | - Hongzhi Shen
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Cun-Zheng Ning
- Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Frontier Science Center for Quantum Information, Beijing, 100084, China
- Beijing National Research Center for Information Science and Technology, Beijing, 100084, China
- School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, AZ, 85287, USA
| | - Dehui Li
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China
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