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Ye H, Tang H, Yu S, Yang Y, Li H. Rhodamine 6G/Transition Metal Dichalcogenide Hybrid Nanoscrolls for Enhanced Optoelectronic Performance. Molecules 2024; 29:2799. [PMID: 38930864 PMCID: PMC11207076 DOI: 10.3390/molecules29122799] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/15/2024] [Revised: 06/07/2024] [Accepted: 06/08/2024] [Indexed: 06/28/2024] Open
Abstract
The low light absorption efficiency has seriously hindered the application of two-dimensional transition metal dichalcogenide (TMDC) nanosheets in the field of optoelectronic devices. Various approaches have been used to improve the performance of TMDC nanosheets. Preparation of one-dimensional TMDC nanoscrolls in combination with photoactive materials has been a promising method to improve their properties recently. In this work, we report a facile method to enhance the optoelectronic performance of TMDC nanoscrolls by wrapping the photoactive organic dye rhodamine (R6G) into them. After R6G molecules were deposited on monolayer TMDC nanosheets by the solution method, the R6G/MoS2 nanoscrolls with lengths up to hundreds of microns were prepared in a short time by dropping a mixture of ammonia and ethanol solution on the R6G/MoS2 nanosheets. The as-obtained R6G/MoS2 nanoscrolls were well characterized by optical microscopy, atomic force microscopy, Raman spectroscopy, and transmission electron microscopy to prove the encapsulation of R6G. There are multiple type II heterojunction interfaces in the R6G/MoS2 nanoscrolls, which can promote the generation of photo-induced carriers and the following electron-hole separation. The separated electrons were transported rapidly along the axial direction of the R6G/MoS2 nanoscrolls, which greatly improves the efficiency of light absorption and photoresponse. Under the irradiation of an incident 405 nm laser, the photoresponsivity, carrier mobility, external quantum efficiency, and detectivity of R6G/MoS2 nanoscrolls were enhanced to 66.07 A/W, 132.93 cm2V-1s-1, 20,261%, and 1.25 × 1012 cm·Hz1/2W-1, which are four orders of magnitude higher than those of monolayer MoS2 nanosheets. Our work indicates that the R6G/TMDC hybrid nanoscrolls could be promising materials for high-performance optoelectronic devices.
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Affiliation(s)
| | | | | | | | - Hai Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China
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Bai C, Wu G, Yang J, Zeng J, Liu Y, Wang J. 2D materials-based photodetectors combined with ferroelectrics. NANOTECHNOLOGY 2024; 35:352001. [PMID: 38697050 DOI: 10.1088/1361-6528/ad4652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Accepted: 05/01/2024] [Indexed: 05/04/2024]
Abstract
Photodetectors are essential optoelectronic devices that play a critical role in modern technology by converting optical signals into electrical signals, which are one of the most important sensors of the informational devices in current 'Internet of Things' era. Two-dimensional (2D) material-based photodetectors have excellent performance, simple design and effortless fabrication processes, as well as enormous potential for fabricating highly integrated and efficient optoelectronic devices, which has attracted extensive research attention in recent years. The introduction of spontaneous polarization ferroelectric materials further enhances the performance of 2D photodetectors, moreover, companying with the reduction of power consumption. This article reviews the recent advances of materials, devices in ferroelectric-modulated photodetectors. This review starts with the introduce of the basic terms and concepts of the photodetector and various ferroelectric materials applied in 2D photodetectors, then presents a variety of typical device structures, fundamental mechanisms and potential applications under ferroelectric polarization modulation. Finally, we summarize the leading challenges currently confronting ferroelectric-modulated photodetectors and outline their future perspectives.
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Affiliation(s)
- Chongyang Bai
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Guangjian Wu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Jing Yang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
- Chongqing Key Laboratory of Precision Optics, Chongqing Institute of East China Normal University, Chongqing 401120, People's Republic of China
| | - Jinhua Zeng
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Yihan Liu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
| | - Jianlu Wang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
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Xiao K, Zhang S, Zhang K, Zhang L, Wen Y, Tian S, Xiao Y, Shi C, Hou S, Liu C, Han L, He J, Tang W, Li G, Wang L, Chen X. Room-Temperature Band-Aligned Infrared Heterostructures for Integrable Sensing and Communication. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2401716. [PMID: 38840455 DOI: 10.1002/advs.202401716] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 04/07/2024] [Indexed: 06/07/2024]
Abstract
The demand for miniaturized and integrated multifunctional devices drives the progression of high-performance infrared photodetectors for diverse applications, including remote sensing, air defense, and communications, among others. Nonetheless, infrared photodetectors that rely solely on single low-dimensional materials often face challenges due to the limited absorption cross-section and suboptimal carrier mobility, which can impair sensitivity and prolong response times. Here, through experimental validation is demonstrated, precise control over energy band alignment in a type-II van der Waals heterojunction, comprising vertically stacked 2D Ta2NiSe5 and the topological insulator Bi2Se3, where the configuration enables polarization-sensitive, wide-spectral-range photodetection. Experimental evaluations at room temperature reveal that the device exhibits a self-powered responsivity of 0.48 A·W-1, a specific directivity of 3.8 × 1011 cm·Hz1/2·W-1, a response time of 151 µs, and a polarization ratio of 2.83. The stable and rapid photoresponse of the device underpins the utility in infrared-coded communication and dual-channel imaging, showing the substantial potential of the detector. These findings articulate a systematic approach to developing miniaturized, multifunctional room-temperature infrared detectors with superior performance metrics and enhanced capabilities for multi-information acquisition.
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Affiliation(s)
- Kening Xiao
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Shi Zhang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Kaixuan Zhang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Libo Zhang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Yuanfeng Wen
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Shijian Tian
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Yunlong Xiao
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Chaofan Shi
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Shicong Hou
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Changlong Liu
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Li Han
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Jiale He
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Weiwei Tang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Guanhai Li
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
| | - Lin Wang
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Xiaoshuang Chen
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai, 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
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Chen C, Zhou Y, Tong L, Pang Y, Xu J. Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2400332. [PMID: 38739927 DOI: 10.1002/adma.202400332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 04/19/2024] [Indexed: 05/16/2024]
Abstract
The quantity of sensor nodes within current computing systems is rapidly increasing in tandem with the sensing data. The presence of a bottleneck in data transmission between the sensors, computing, and memory units obstructs the system's efficiency and speed. To minimize the latency of data transmission between units, novel in-memory and in-sensor computing architectures are proposed as alternatives to the conventional von Neumann architecture, aiming for data-intensive sensing and computing applications. The integration of 2D materials and 2D ferroelectric materials has been expected to build these novel sensing and computing architectures due to the dangling-bond-free surface, ultra-fast polarization flipping, and ultra-low power consumption of the 2D ferroelectrics. Here, the recent progress of 2D ferroelectric devices for in-sensing and in-memory neuromorphic computing is reviewed. Experimental and theoretical progresses on 2D ferroelectric devices, including passive ferroelectrics-integrated 2D devices and active ferroelectrics-integrated 2D devices, are reviewed followed by the integration of perception, memory, and computing application. Notably, 2D ferroelectric devices have been used to simulate synaptic weights, neuronal model functions, and neural networks for image processing. As an emerging device configuration, 2D ferroelectric devices have the potential to expand into the sensor-memory and computing integration application field, leading to new possibilities for modern electronics.
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Affiliation(s)
- Chunsheng Chen
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Jianbin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
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5
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Wang P, Li Z, Xia X, Zhang J, Lan Y, Zhu L, Ke Q, Mu H, Lin S. Anisotropic Te/PdSe 2 Van Der Waals Heterojunction for Self-Powered Broadband and Polarization-Sensitive Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401216. [PMID: 38593322 DOI: 10.1002/smll.202401216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2024] [Revised: 03/16/2024] [Indexed: 04/11/2024]
Abstract
Polarization-sensitive broadband optoelectronic detection is crucial for future sensing, imaging, and communication technologies. Narrow bandgap 2D materials, such as Te and PdSe2, show promise for these applications, yet their polarization performance is limited by inherent structural anisotropies. In this work, a self-powered, broadband photodetector utilizing a Te/PdSe2 van der Waals (vdWs) heterojunction, with orientations meticulously tailored is introduced through polarized Raman optical spectra and tensor calculations to enhance linear polarization sensitivity. The device exhibits anisotropy ratios of 1.48 at 405 nm, 3.56 at 1550 nm, and 1.62 at 4 µm, surpassing previously-reported photodetectors based on pristine Te and PdSe2. Additionally, it exhibits high responsivity (617 mA W-1 at 1550 nm), specific detectivity (5.27 × 1010 Jones), fast response (≈4.5 µs), and an extended spectral range beyond 4 µm. The findings highlight the significance of orientation-engineered heterostructures in enhancing polarization-sensitive photodetectors and advancing optoelectronic technology.
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Affiliation(s)
- Pu Wang
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Zhao Li
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China
| | - Xue Xia
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Jingni Zhang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- School of Automation and Information Engineering, Xi'an University of Technology, Xi'an, 710048, P. R. China
| | - Yingying Lan
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Lu Zhu
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
| | - Qingqing Ke
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
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6
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Jiang X, Tan J, Liu D, Feng Y, Chen KQ, Long R, Vasenko AS. Improved Carrier Separation and Recombination by Ferroelectric Polarization in the CuBiP 2Se 6/C 2N Heterostructure: A Nonadiabatic Molecular Dynamics Study. J Phys Chem Lett 2024:2867-2875. [PMID: 38446846 DOI: 10.1021/acs.jpclett.4c00404] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
The rapid recombination of photogenerated carriers heavily restricts the photocatalytic efficiency. Here, we propose a new strategy to improve catalytic efficiency based on the ferroelectric van der Waals heterostructure (CuBiP2Se6/C2N). Combining density functional theory and the nonadiabatic molecular dynamics (NAMD) method, we have systematically analyzed the ground-state properties and carrier dynamics images in the CuBiP2Se6/C2N heterostructure. Our calculations showed that the ferroelectric polarization of CuBiP2Se6 provides the internal driving force for the photogenerated carriers separation. NAMD results demonstrate that the excited-state carrier transfer and recombination processes in the CuBiP2Se6/C2N are consistent with a type II mechanism. Meanwhile, constructing the ferroelectric heterostructure can effectively prolong the carrier lifetime, from ∼65.98 to ∼124.54 ps. Moreover, the high quantum efficiency and tunable band edge positions mean that the CuBiP2Se6/C2N heterostructure is an excellent potential candidate material for photocatalytic water splitting.
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Affiliation(s)
- Xingxing Jiang
- College of Physics and Electronics Engineering, Hengyang Normal University, Hengyang 421002, China
- HSE University, 101000 Moscow, Russia
| | - Jieyao Tan
- College of Physics and Electronics Engineering, Hengyang Normal University, Hengyang 421002, China
| | | | - Yexin Feng
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Ke-Qiu Chen
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Run Long
- Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Andrey S Vasenko
- HSE University, 101000 Moscow, Russia
- Donostia International Physics Center (DIPC), 20018 San Sebastián-Donostia, Euskadi, Spain
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7
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Meng G, She J, Yu H, Li Q, Liu X, Yin Z, Cheng Y. Polarizable Nonvolatile Ferroelectric Gating in Monolayer MoS 2 Phototransistors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:10316-10324. [PMID: 38381062 DOI: 10.1021/acsami.3c15533] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Given the requirements for power and dimension scaling, modulating channel transport properties using high gate bias is unfavorable due to the introduction of severe leakages and large power dissipation. Hence, this work presents an ultrathin phototransistor with chemical-vapor-deposition-grown monolayer MoS2 as the channel and a 10.2 nm thick Al:HfO2 ferroelectric film as the dielectric. The proposed device is meticulously modulated utilizing an Al:HfO2 nanofilm, which passivates traps and suppresses charge Coulomb scattering with Al doping, efficiently improving carrier transport and inhibiting leakage current. Furthermore, a bipolar pulses excitable polarization method is developed to induce a nonvolatile electrostatic field. The MoS2 channel is fully depleted by the switchable and stable floating gate originating from remanent polarization, leading to a high detectivity of 2.05 × 1011 Jones per nanometer of gating layer (Jones nm-1) and photocurrent on/off ratio >104 nm-1, which are superior to the state-of-the-art phototransistors based on two-dimensional (2D) materials and ferroelectrics. The proposed polarizable nonvolatile ferroelectric gating in a monolayer MoS2 phototransistor promises a potential route toward ultrasensitive photodetectors with low power consumption that boast of high levels of integration.
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Affiliation(s)
- Guodong Meng
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Junyi She
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Hao Yu
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Qiang Li
- School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Xin Liu
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zongyou Yin
- Research School of Chemistry, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yonghong Cheng
- State Key Laboratory of Electrical Insulation and Power Equipment, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, China
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8
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Yu Z, Tao R, Guo J, Feng S, Wang Y. Direct Growth of Low Thermal Conductivity WTe 2 Nanocrystalline Films on W Films. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:401. [PMID: 38470732 DOI: 10.3390/nano14050401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2024] [Revised: 02/17/2024] [Accepted: 02/18/2024] [Indexed: 03/14/2024]
Abstract
WTe2 has attracted much attention because of its layered structure and special electronic energy band structure. However, due to the difficulty of evaporating the W element itself and the inactivity of the Te element, the obtained large-area WTe2 thin films are usually accompanied by many defects. In this paper, WTe2 nanocrystalline films were successfully prepared on quartz substrates using magnetron sputtering and chemical vapor deposition techniques. Various analytical techniques such as X-ray Diffraction, Raman spectra, X-ray Photoelectron Spectroscopy, Scanning Electron Microscope, and photoluminescence spectra are employed to analyze the crystal structure, composition, and morphology. The effects of different tellurization temperatures and tellurization times on the properties of WTe2 thin films were investigated. WTe2 nanocrystalline films with good crystallinity were obtained at 600 °C for 30 min. The thermal conductivity of the WTe2 films prepared under this condition was 1.173 Wm-1K-1 at 300 K, which is significantly higher than that of samples prepared using other methods.
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Affiliation(s)
- Zhisong Yu
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Rong Tao
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Jin Guo
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Shiyi Feng
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
| | - Yue Wang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
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9
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Yan Q, Weng Y, Wang S, Zhou Z, Hu Y, Li Q, Xue J, Feng Z, Luo Z, Feng R, You L, Fang L. Ambient Degradation Anisotropy and Mechanism of van der Waals Ferroelectric NbOI 2. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9051-9059. [PMID: 38348475 DOI: 10.1021/acsami.3c18018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/23/2024]
Abstract
The spontaneous centrosymmetry-breaking and robust room-temperature ferroelectricity in niobium oxide dihalides spurs a flurry of explorations into its promising second-order nonlinear optical properties, and promises potential applications in nonvolatile electro-optical and optoelectronic devices. However, the ambient stability of the niobium oxide dihalides remains questionable, which overshadows their future development. In this work, the chemical degradation of NbOI2 is comprehensively investigated using combined chemical and optical microscopies in conjunction with spectroscopies. We unveil the highly anisotropic degradation kinetics of NbOI2 driven by the hydrolysis process of the unstable dangling iodine bonds dominantly on the (010) facet and progressing along the c axis. Knowing its degradation mechanism, the NbOI2 flake can then be stabilized by the hexagonal boron nitride encapsulation, which isolates the air moisture. These findings provide direct insights into the ambient instability of NbOI2, and they deliver possible solutions to circumvent this issue, which are essential for its practical integration in photonic and electronic devices.
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Affiliation(s)
- Qingyu Yan
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Yuyan Weng
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Shun Wang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Zhou Zhou
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Yiqi Hu
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Qiankun Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Jinshuo Xue
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Zhijian Feng
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Zhongshen Luo
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Runcang Feng
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Lu You
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
| | - Liang Fang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Soochow University, Suzhou 215006, China
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10
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Lee KJ, Kim JH, Jeon S, Shin CW, Kim HR, Park HG, Kim J. Polarization-Dependent Memory and Erasure in Quantum Dots/Graphene Synaptic Devices. NANO LETTERS 2024; 24:2421-2427. [PMID: 38319957 DOI: 10.1021/acs.nanolett.4c00124] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
We demonstrate excitatory and inhibitory properties in a single heterostructure consisting of two quantum dots/graphene synaptic elements using linearly polarized monochromatic light. Perovskite quantum dots and PbS quantum dots were used to increase and decrease photocurrent weights, respectively. The polarization-dependent photocurrent was realized by adding a polarizer in the middle of the PbS quantum dots/graphene and perovskite quantum dots/graphene elements. When linearly polarized light passed through the polarizer, both the lower excitatory and upper inhibitory devices were activated, with the lower device with the stronger response dominating to increase the current weight. In contrast, the polarized light was blocked by the polarizer, and the above device was only operated, reducing the current weight. Furthermore, two orthogonal polarizations of light were used to perform the sequential processes of potentiation and habituation. By adjustment of the polarization angle of light, not only the direction of the current weight but also its level was altered.
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Affiliation(s)
- Ki-Jeong Lee
- Department of Physics, Jeju National University, Jeju 63243, Republic of Korea
| | - Jin Hyung Kim
- Department of Physics, Jeju National University, Jeju 63243, Republic of Korea
| | - Sooin Jeon
- Department of Physics, Jeju National University, Jeju 63243, Republic of Korea
| | - Chi Won Shin
- Department of Physics, Jeju National University, Jeju 63243, Republic of Korea
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Ha-Reem Kim
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Hong-Gyu Park
- Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea
| | - Jungkil Kim
- Department of Physics, Jeju National University, Jeju 63243, Republic of Korea
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11
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Xin W, Zhong W, Shi Y, Shi Y, Jing J, Xu T, Guo J, Liu W, Li Y, Liang Z, Xin X, Cheng J, Hu W, Xu H, Liu Y. Low-Dimensional-Materials-Based Photodetectors for Next-Generation Polarized Detection and Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306772. [PMID: 37661841 DOI: 10.1002/adma.202306772] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2023] [Revised: 08/22/2023] [Indexed: 09/05/2023]
Abstract
The vector characteristics of light and the vectorial transformations during its transmission lay a foundation for polarized photodetection of objects, which broadens the applications of related detectors in complex environments. With the breakthrough of low-dimensional materials (LDMs) in optics and electronics over the past few years, the combination of these novel LDMs and traditional working modes is expected to bring new development opportunities in this field. Here, the state-of-the-art progress of LDMs, as polarization-sensitive components in polarized photodetection and even the imaging, is the main focus, with emphasis on the relationship between traditional working principle of polarized photodetectors (PPs) and photoresponse mechanisms of LDMs. Particularly, from the view of constitutive equations, the existing works are reorganized, reclassified, and reviewed. Perspectives on the opportunities and challenges are also discussed. It is hoped that this work can provide a more general overview in the use of LDMs in this field, sorting out the way of related devices for "more than Moore" or even the "beyond Moore" research.
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Affiliation(s)
- Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Weiheng Zhong
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yujie Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yimeng Shi
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jiawei Jing
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Weizhen Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yuanzheng Li
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Zhongzhu Liang
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Xing Xin
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Jinluo Cheng
- GPL Photonics Laboratory, State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, Jilin, 130024, China
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12
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Liu J, Su L, Zhang X, Shtansky DV, Fang X. Ferroelectric-Optoelectronic Hybrid System for Photodetection. SMALL METHODS 2024; 8:e2300319. [PMID: 37312397 DOI: 10.1002/smtd.202300319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2023] [Revised: 04/28/2023] [Indexed: 06/15/2023]
Abstract
Photodetectors (PDs), as functional devices based on photon-to-electron conversion, are an indispensable component for the next-generation Internet of Things system. The research of advanced and efficient PDs that meet the diverse demands is becoming a major task. Ferroelectric materials can develop a unique spontaneous polarization due to the symmetry-breaking of the unit cell, which is switchable under an external electric field. Ferroelectric polarization field has the intrinsic characteristics of non-volatilization and rewritability. Introducing ferroelectrics to effectively manipulate the band bending and carrier transport can be non-destructive and controllable in the ferroelectric-optoelectronic hybrid systems. Hence, ferroelectric integration offers a promising strategy for high-performance photoelectric detection. This paper reviews the fundamentals of optoelectronic and ferroelectric materials, and their interactions in hybrid photodetection systems. The first section introduces the characteristics and applications of typical optoelectronic and ferroelectric materials. Then, the interplay mechanisms, modulation effects, and typical device structures of ferroelectric-optoelectronic hybrid systems are discussed. Finally, in summary and perspective section, the progress of ferroelectrics integrated PDs is summed up and the challenges of ferroelectrics in the field of optoelectronics are considered.
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Affiliation(s)
- Jie Liu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Li Su
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Xinglong Zhang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Dmitry V Shtansky
- National University of Science and Technology "MISIS", Moscow, 119049, Russia
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
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13
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Liu Q, Cui S, Bian R, Pan E, Cao G, Li W, Liu F. The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications. ACS NANO 2024; 18:1778-1819. [PMID: 38179983 DOI: 10.1021/acsnano.3c05711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.
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Affiliation(s)
- Qing Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Silin Cui
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Renji Bian
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Er Pan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, 615013 Xi'an, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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14
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Wang F, Zhang T, Xie R, Liu A, Dai F, Chen Y, Xu T, Wang H, Wang Z, Liao L, Wang J, Zhou P, Hu W. Next-Generation Photodetectors beyond Van Der Waals Junctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301197. [PMID: 36960667 DOI: 10.1002/adma.202301197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/16/2023] [Indexed: 06/18/2023]
Abstract
With the continuous advancement of nanofabrication techniques, development of novel materials, and discovery of useful manipulation mechanisms in high-performance applications, especially photodetectors, the morphology of junction devices and the way junction devices are used are fundamentally revolutionized. Simultaneously, new types of photodetectors that do not rely on any junction, providing a high signal-to-noise ratio and multidimensional modulation, have also emerged. This review outlines a unique category of material systems supporting novel junction devices for high-performance detection, namely, the van der Waals materials, and systematically discusses new trends in the development of various types of devices beyond junctions. This field is far from mature and there are numerous methods to measure and evaluate photodetectors. Therefore, it is also aimed to provide a solution from the perspective of applications in this review. Finally, based on the insight into the unique properties of the material systems and the underlying microscopic mechanisms, emerging trends in junction devices are discussed, a new morphology of photodetectors is proposed, and some potential innovative directions in the subject area are suggested.
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Affiliation(s)
- Fang Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Anna Liu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fuxing Dai
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tengfei Xu
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Hailu Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Lei Liao
- College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Jianlu Wang
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Peng Zhou
- School of Microelectronics, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai, 200083, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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15
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Yu Y, Xiong T, Liu YY, Yang J, Xia JB, Wei Z. Polarization Reversal of Group IV-VI Semiconductors with Pucker-Like Structure: Mechanism Dissecting and Function Demonstration. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307769. [PMID: 37696251 DOI: 10.1002/adma.202307769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Revised: 08/31/2023] [Indexed: 09/13/2023]
Abstract
Polarization imaging presents advantages in capturing spatial, spectral, and polarization information across various spectral bands. It can improve the perceptual ability of image sensors and has garnered more applications. Despite its potential, challenges persist in identifying band information and implementing image enhancement using polarization imaging. These challenges often necessitate integrating spectrometers or other components, resulting in increased complexities within image processing systems and hindering device miniaturization trends. Here, the characteristics of anisotropic absorption reversal are systematically elucidated in pucker-like group IV-VI semiconductors MX (M = Ge, Sn; X = S, Se) through theoretical predictions and experimental validations. Additionally, the fundamental mechanisms behind anisotropy reversal in different bands are also explored. The photodetector is constructed by utilizing MX as a light-absorbing layer, harnessing polarization-sensitive photoresponse for virtual imaging. The results indicate that the utilization of polarization reversal photodetectors holds advantages in achieving further multifunctional integration within the device structure while simplifying its configuration, including band information identification and image enhancement. This study provides a comprehensive analysis of polarization reversal mechanisms and presents a promising and reliable approach for achieving dual-band image band identification and image enhancement without additional auxiliary components.
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Affiliation(s)
- Yali Yu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Xiong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jian-Bai Xia
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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16
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Sukhanova EV, Popov ZI. Band alignment type I, II transformations in Hf 2CO 2/MoS 2 heterostructures using biaxial strain, external electric field, and interlayer coupling: a first principal investigation. Phys Chem Chem Phys 2023; 25:32062-32070. [PMID: 37982202 DOI: 10.1039/d3cp04546c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2023]
Abstract
The transition to neuromorphic devices is relevant to the development of materials capable of providing electronic switching in response to external stimuli. In the present work, the Hf2CO2/MoS2 heterostructure under biaxial strain, interlayer coupling, and an electric field was investigated by first-principles calculations based on density functional theory. We have shown that the influence of lateral deformation as well as the perpendicular external electric field is more significant compared to the influence of external vertical pressure on changes in the heterojunction type of heterostructure. The lateral stretching leads to a type-I and lateral compression results in a type-II heterojunction, and an external electric field also has an effect on heterojunction type. The combination of these impacts can tune the Hf2CO2/MoS2 heterostructure. The current work suggests a compelling way to make type-I and type-II heterostructure types consisting of Hf2CO2 and MoS2 monolayers for new nanodevices in fields like photonics, electronics, optoelectronic and neuromorphic applications.
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Affiliation(s)
- Ekaterina V Sukhanova
- Emanuel Institute of Biochemical Physics RAS, 119334, 4 Kosigin st., Moscow, Russia.
| | - Zakhar I Popov
- Emanuel Institute of Biochemical Physics RAS, 119334, 4 Kosigin st., Moscow, Russia.
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17
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Yan C, Yang K, Zhang H, Chen Y, Liu H. High performance self-powered photodetector based on van der Waals heterojunction. NANOTECHNOLOGY 2023; 35:035203. [PMID: 37852217 DOI: 10.1088/1361-6528/ad047f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Accepted: 10/11/2023] [Indexed: 10/20/2023]
Abstract
Self-powered photodetectors that do not require external power support are expected to play a key role in future photodetectors due to their low power characteristics, but achieving high responsivity remains a challenge. 2D van der Waals heterojunctions are a promising technology for high-performance self-powered photodetectors due to their excellent optical and electrical properties. Here, we fabricate a self-powered photodetector based on In2Se3/WSe2/ReS2van der Waals heterojunction self-powered photodetector. Due to the presence of ReS2layer, photocurrent is enhanced as a result of the increase in light absorption efficiency and the effective region for generating photogenerated carriers. The built-in electric field is enhanced by a negative 'back-gate voltage' along the p-n junction vertical direction generated by the electrons in the photo-generated electrons accumulation layer. Accordingly, the optical responsivity and the photoresponse speed of this heterojunction self-powered photodetector are greatly boosted. The proposed self-powered photodetector based on the In2Se3/WSe2/ReS2heterojunction exhibits a high responsivity of 438 mA W-1, which is 17 times higher compared to the In2Se3/WSe2photodetector, a self-powered current (1.1 nA) that is an order of magnitude higher than that of the In2Se3/WSe2photodetector, and a fast response time that is 250% faster. Thus the self-powered photodetector with a stronger built-in electric field and a wider depletion zone can provide a new technological support for the fabrication of high responsivity, low power consumption and high speed self-powered photodetectors based on van der Waals heterojunctions.
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Affiliation(s)
- Cong Yan
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China
| | - Kun Yang
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China
| | - Hao Zhang
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China
| | - Yaolin Chen
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China
| | - Hongxia Liu
- Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, The School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China
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18
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Wang Z, Pan H, Zhou B. Nonvolatile magnetoelectric coupling in two-dimensional van der Waals sandwich heterostructure CuInP 2S 6/MnCl 3/CuInP 2S 6. Phys Chem Chem Phys 2023; 25:29098-29107. [PMID: 37862024 DOI: 10.1039/d3cp03798c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/21/2023]
Abstract
Electrical control of magnetism is of great interest for low-energy-consumption spintronic applications. Due to the recent experimental breakthrough in two-dimensional materials, with the absence of hanging bonds on the surface and strong tolerance for lattice mismatch, heterogeneous integration of different two-dimensional materials provides a new opportunity for coupling between different physical properties. Here, we report the realization of nonvolatile magnetoelectric coupling in vdW sandwich heterostructure CuInP2S6/MnCl3/CuInP2S6. Using first-principles calculations, we reveal that when interfacing with ferroelectric CuInP2S6, the Dirac half-metallic state of monolayer MnCl3 will be destroyed. Moreover, depending on the electrically polarized direction of CuInP2S6, MnCl3 can be a half-metal or a ferromagnetic semiconductor. We unveil that the obtained ferromagnetic semiconductor in MnCl3 can be attributed to the different gain and loss of electrons on the two adjacent Mn atoms due to the sublattice symmetry broken by interlayer coupling. The effects of interfacial magnetoelectric coupling on magnetic anisotropy and ferromagnetic Curie temperature of MnCl3 are also investigated, and a multiferroic memory based on this model is designed. Our work not only provides a promising way to design nonvolatile electrical control of magnetism but also renders monolayer MnCl3 an appealing platform for developing low-dimensional memory devices.
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Affiliation(s)
- Zichun Wang
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Honggang Pan
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
| | - Baozeng Zhou
- Tianjin Key Laboratory of Film Electronic & Communicate Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China.
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19
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Dutta R, Bala A, Sen A, Spinazze MR, Park H, Choi W, Yoon Y, Kim S. Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303272. [PMID: 37453927 DOI: 10.1002/adma.202303272] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Revised: 06/21/2023] [Accepted: 07/03/2023] [Indexed: 07/18/2023]
Abstract
The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.
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Affiliation(s)
- Riya Dutta
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Arindam Bala
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Anamika Sen
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Michael Ross Spinazze
- Waterloo Institute for Nanotechnology and the Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - Heekyeong Park
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Woong Choi
- School of Materials Science & Engineering, Kookmin University, Seoul, 02707, Republic of Korea
| | - Youngki Yoon
- Waterloo Institute for Nanotechnology and the Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - Sunkook Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
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20
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Chen RS, Lu Y. Negative Capacitance Field Effect Transistors based on Van der Waals 2D Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2304445. [PMID: 37899295 DOI: 10.1002/smll.202304445] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2023] [Revised: 09/20/2023] [Indexed: 10/31/2023]
Abstract
Steep subthreshold swing (SS) is a decisive index for low energy consumption devices. However, the SS of conventional field effect transistors (FETs) has suffered from Boltzmann Tyranny, which limits the scaling of SS to sub-60 mV dec-1 at room temperature. Ferroelectric gate stack with negative capacitance (NC) is proved to reduce the SS effectively by the amplification of the gate voltage. With the application of 2D ferroelectric materials, the NC FETs can be further improved in performance and downscaled to a smaller dimension as well. This review introduces some related concepts for in-depth understanding of NC FETs, including the NC, internal gate voltage, SS, negative drain-induced barrier lowering, negative differential resistance, single-domain state, and multi-domain state. Meanwhile, this work summarizes the recent advances of the 2D NC FETs. Moreover, the electrical characteristics of some high-performance NC FETs are expressed as well. The factors which affect the performance of the 2D NC FETs are also presented in this paper. Finally, this work gives a brief summary and outlook for the 2D NC FETs.
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Affiliation(s)
- Ruo-Si Chen
- School of Engineering, College of Engineering, Computing & Cybernetics, Australian National University, Canberra, ACT, 2602, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering, Computing & Cybernetics, Australian National University, Canberra, ACT, 2602, Australia
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21
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Zheng T, Yang M, Pan Y, Zheng Z, Sun Y, Li L, Huo N, Luo D, Gao W, Li J. Self-Powered Photodetector with High Efficiency and Polarization Sensitivity Enabled by WSe 2/Ta 2NiSe 5/WSe 2 van der Waals Dual Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37294943 DOI: 10.1021/acsami.3c04147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Self-powered photodetectors have triggered widespread attention because of the requirement of Internet of Things (IoT) application and low power consumption. However, it is challenging to simultaneously implement miniaturization, high quantum efficiency, and multifunctionalization. Here, we report a high-efficiency and polarization-sensitive photodetector enabled by two-dimensional (2D) WSe2/Ta2NiSe5/WSe2 van der Waals (vdW) dual heterojunctions (DHJ) along with a sandwich-like electrode pair. On account of enhanced light collection efficiency and two opposite built-in electric fields at the hetero-interfaces, the DHJ device achieves not only a broadband spectral response of 400-1550 nm but outstanding performance under 635 nm light illumination including an ultrahigh external quantum efficiency (EQE) of 85.5%, a pronounced power conversion efficiency (PCE) of 1.9%, and a fast response speed of 420/640 μs, which is much better than that of the WSe2/Ta2NiSe5 single heterojunction (SHJ). Significantly, based on the strong in-plane anisotropy of 2D Ta2NiSe5 nanosheets, the DHJ device shows competitive polarization sensitivities of 13.9 and 14.8 under 635 and 808 nm light, respectively. Furthermore, an excellent self-powered visible imaging capability based on the DHJ device is demonstrated. These results pave a promising platform for realizing self-powered photodetectors with high performance and multifunctionality.
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Affiliation(s)
- Tao Zheng
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Yuan Pan
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Zhaoqiang Zheng
- College of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Yiming Sun
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Ling Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Dongxiang Luo
- Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Jingbo Li
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
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22
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Guo J, Peng R, Zhang X, Xin Z, Wang E, Wu Y, Li C, Fan S, Shi R, Liu K. Perforated Carbon Nanotube Film Assisted Growth of Uniform Monolayer MoS 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300766. [PMID: 36866500 DOI: 10.1002/smll.202300766] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2023] [Revised: 02/16/2023] [Indexed: 06/08/2023]
Abstract
Scaling up the chemical vapor deposition (CVD) of monolayer transition metal dichalcogenides (TMDCs) is in high demand for practical applications. However, for CVD-grown TMDCs on a large scale, there are many existing factors that result in their poor uniformity. In particular, gas flow, which usually leads to inhomogeneous distributions of precursor concentrations, has yet to be well controlled. In this work, the growth of uniform monolayer MoS2 on a large scale by the delicate control of gas flows of precursors, which is realized by vertically aligning a well-designed perforated carbon nanotube (p-CNT) film face-to-face with the substrate in a horizontal tube furnace, is achieved. The p-CNT film releases gaseous Mo precursor from the solid part and allows S vapor to pass through the hollow part, resulting in uniform distributions of both gas flow rate and precursor concentrations near the substrate. Simulation results further verify that the well-designed p-CNT film guarantees a steady gas flow and a uniform spatial distribution of precursors. Consequently, the as-grown monolayer MoS2 shows quite good uniformity in geometry, density, structure, and electrical properties. This work provides a universal pathway for the synthesis of large-scale uniform monolayer TMDCs, and will advance their applications in high-performance electronic devices.
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Affiliation(s)
- Jing Guo
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Ruixuan Peng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Xiaolong Zhang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Zeqin Xin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Chenyu Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Shoushan Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, P. R. China
| | - Run Shi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
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23
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Ding N, Yananose K, Rizza C, Fan FR, Dong S, Stroppa A. Magneto-optical Kerr Effect in Ferroelectric Antiferromagnetic Two-Dimensional Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:22282-22290. [PMID: 37078781 DOI: 10.1021/acsami.3c02680] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
We studied the magneto-optical Kerr effect (MOKE) of two-dimensional (2D) heterostructure CrI3/In2Se3/CrI3 using density functional theory calculations and symmetry analysis. The spontaneous polarization in the In2Se3 ferroelectric layer and the antiferromagnetic ordering in CrI3 layers break the mirror and the time-reversal symmetry, thus activating MOKE. We show that the Kerr angle can be reversed by either the polarization or the antiferromagnetic order parameter. Our results suggest that ferroelectric and antiferromagnetic 2D heterostructures could be exploited for ultracompact information storage devices, where the information is encoded by the two ferroelectric or the two time-reversed antiferromagnetic states and the read-out is performed optically by MOKE.
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Affiliation(s)
- Ning Ding
- School of Physics, Southeast University, Nanjing, Jiangsu 21189, People's Republic of China
| | - Kunihiro Yananose
- Center for Theoretical Physics, Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Carlo Rizza
- Department of Physical and Chemical Sciences, University of L'Aquila, Via Vetoio, I-67100 Coppito, L'Aquila, Italy
| | - Feng-Ren Fan
- Department of Physics and Guangdong-Hong Kong Joint Laboratory of Quantum Matter, The University of Hong Kong, Hong Kong, People's Republic of China
| | - Shuai Dong
- School of Physics, Southeast University, Nanjing, Jiangsu 21189, People's Republic of China
| | - Alessandro Stroppa
- Department of Physical and Chemical Sciences, University of L'Aquila, Via Vetoio, I-67100 Coppito, L'Aquila, Italy
- Consiglio Nazionale delle Ricerche, Institute for Superconducting and Innovative Materials and Devices (CNR-SPIN), University of L'Aquila, Via Vetoio, I-67100 Coppito, L'Aquila, Italy
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24
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Jia C, Wu S, Fan J, Luo C, Fan M, Li M, He L, Yang Y, Zhang H. Ferroelectrically Modulated and Enhanced Photoresponse in a Self-Powered α-In 2Se 3/Si Heterojunction Photodetector. ACS NANO 2023; 17:6534-6544. [PMID: 36952315 PMCID: PMC10100568 DOI: 10.1021/acsnano.2c11925] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2022] [Accepted: 02/08/2023] [Indexed: 06/18/2023]
Abstract
Photodetectors have been applied to pivotal optoelectronic components of modern optical communication, sensing, and imaging systems. As a room-temperature ferroelectric van der Waals semiconductor, 2D α-In2Se3 is a promising candidate for a next-generation optoelectronic material because of its thickness-dependent direct bandgap and excellent optoelectronic performance. Previous studies of photodetectors based on α-In2Se3 have been rarely focused on the modulated relationship between the α-In2Se3 intrinsic ferroelectricity and photoresponsivity. Herein, a simple integrated process and high-performance photodetector based on an α-In2Se3/Si vertical hybrid-dimensional heterojunction was constructed. Our photodetector in the ferroelectric polarization up state accomplishes a self-powered, highly sensitive photoresponse with an on/off ratio of 4.5 × 105 and detectivity of 1.6 × 1013 Jones, and it also shows a fast response time with 43 μs. The depolarization field generated by the remanent polarization of ferroelectrics in α-In2Se3 provides a strategy for enhancement and modulation of photodetection. The negative correlation was discovered because the enhancement photoresponsivity factor of ferroelectric modulation competes with the photovoltaic behavior within the α-In2Se3/Si heterojunction. Our research highlights the great potential of the high-efficiency heterojunction photodetector for future object recognition and photoelectric imaging.
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Affiliation(s)
- Cheng Jia
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Shuangxiang Wu
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Jinze Fan
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Chaojie Luo
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
| | - Minghui Fan
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Instruments
Center for Physical Science, University
of Science and Technology of China, Hefei, Anhui 230026, China
| | - Ming Li
- Instruments
Center for Physical Science, University
of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lanping He
- Department
of Physics, School of Physics, Hefei University
of Technology, Hefei 230009, China
| | - Yuanjun Yang
- Department
of Physics, School of Physics, Hefei University
of Technology, Hefei 230009, China
| | - Hui Zhang
- Hefei
National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei
National Laboratory, University of Science
and Technology of China, Hefei 230088, China
- Department
of Physics, University of Science and Technology
of China, Hefei 230026, China
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25
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Wang J, Liu C, Zhang L, Chen J, Chen J, Yu F, Zhao Z, Tang W, Li X, Zhang S, Li G, Wang L, Cheng Y, Chen X. Selective Enhancement of Photoresponse with Ferroelectric-Controlled BP/In 2 Se 3 vdW Heterojunction. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205813. [PMID: 36782097 PMCID: PMC10104633 DOI: 10.1002/advs.202205813] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/07/2022] [Revised: 01/16/2023] [Indexed: 06/18/2023]
Abstract
Owing to the large built-in field for efficient charge separation, heterostructures facilitate the simultaneous realization of a low dark current and high photocurrent. The lack of an efficient approach to engineer the depletion region formed across the interfaces of heterojunctions owing to doping differences hinders the realization of high-performance van der Waals (vdW) photodetectors. This study proposes a ferroelectric-controlling van der Waals photodetector with vertically stacked two-dimensional (2D) black phosphorus (BP)/indium selenide (In2 Se3 ) to realize high-sensitivity photodetection. The depletion region can be reconstructed by tuning the polarization states generated from the ferroelectric In2 Se3 layers. Further, the energy bands at the heterojunction interfaces can be aligned and flexibly engineered using ferroelectric field control. Fast response, self-driven photodetection, and three-orders-of-magnitude detection improvements are achieved in the switchable visible or near-infrared operation bands. The results of the study are expected to aid in improving the photodetection performance of vdW optoelectronic devices.
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Affiliation(s)
- Jian Wang
- State Key Laboratory of Precision SpectroscopyEast China Normal UniversityShanghai200062P. R. China
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
| | - Changlong Liu
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesNo.1 SubLane XiangshanHangzhou310024P. R. China
| | - Libo Zhang
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesNo.1 SubLane XiangshanHangzhou310024P. R. China
| | - Jin Chen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
| | - Jian Chen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
| | - Feilong Yu
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
| | - Zengyue Zhao
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
| | - Weiwei Tang
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesNo.1 SubLane XiangshanHangzhou310024P. R. China
| | - Xin Li
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
- Shanghai Research Center for Quantum Sciences99 Xiupu RoadShanghai201315P. R. China
| | - Shi Zhang
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesNo.1 SubLane XiangshanHangzhou310024P. R. China
| | - Guanhai Li
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesNo.1 SubLane XiangshanHangzhou310024P. R. China
- Shanghai Research Center for Quantum Sciences99 Xiupu RoadShanghai201315P. R. China
| | - Lin Wang
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
| | - Ya Cheng
- State Key Laboratory of Precision SpectroscopyEast China Normal UniversityShanghai200062P. R. China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu Tian RoadShanghai200083P. R. China
- Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesNo.1 SubLane XiangshanHangzhou310024P. R. China
- Shanghai Research Center for Quantum Sciences99 Xiupu RoadShanghai201315P. R. China
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26
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Fumega AO, Lado JL. Ferroelectric valley valves with graphene/MoTe 2 van der Waals heterostructures. NANOSCALE 2023; 15:2181-2187. [PMID: 36633129 DOI: 10.1039/d2nr05185k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Ferroelectric van der Waals heterostructures provide a natural platform to design a variety of electrically controllable devices. In this work, we demonstrate that AB bilayer graphene encapsulated in MoTe2 acts as a valley valve that displays a switchable built-in topological gap, leading to ferroelectrically driven topological channels. Using a combination of ab initio calculations and low energy models, we show that the ferroelectric order of MoTe2 allows the control of the gap opening in bilayer graphene and leads to topological channels between different ferroelectric domains. Moreover, we analyze the effect that the moiré modulation between MoTe2 and graphene layers has in the topological modes, demonstrating that the edge states are robust against moiré modulations of the ferroelectrically-induced electric potential. Our results put forward ferroelectric/graphene heterostructures as versatile platforms to engineer switchable built-in topological channels without requiring an external electric bias.
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Affiliation(s)
- Adolfo O Fumega
- Department of Applied Physics, Aalto University, 02150 Espoo, Finland
| | - Jose L Lado
- Department of Applied Physics, Aalto University, 02150 Espoo, Finland
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27
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Huang Z, Zhou Y, Luo Z, Yang Y, Yang M, Gao W, Yao J, Zhao Y, Yang Y, Zheng Z, Li J. Integration of photovoltaic and photogating effects in a WSe 2/WS 2/p-Si dual junction photodetector featuring high-sensitivity and fast-response. NANOSCALE ADVANCES 2023; 5:675-684. [PMID: 36756495 PMCID: PMC9891068 DOI: 10.1039/d2na00552b] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/17/2022] [Accepted: 11/26/2022] [Indexed: 06/09/2023]
Abstract
Two-dimensional (2D) material-based van der Waals (vdW) heterostructures with exotic semiconducting properties have shown tremendous potential in next-generation photovoltaic photodetectors. Nevertheless, these vdW heterostructure devices inevitably suffer from a compromise between high sensitivity and fast response. Herein, an ingenious photovoltaic photodetector based on a WSe2/WS2/p-Si dual-vdW heterojunction is demonstrated. First-principles calculations and energy band profiles consolidate that the photogating effect originating from the bottom vdW heterojunction not only strengthens the photovoltaic effect of the top vdW heterojunction, but also suppresses the recombination of photogenerated carriers. As a consequence, the separation of photogenerated carriers is facilitated and their lifetimes are extended, resulting in higher photoconductive gain. Coupled with these synergistic effects, this WSe2/WS2/p-Si device exhibits both high sensitivity (responsivity of 340 mA W-1, a light on/off ratio greater than 2500, and a detectivity of 3.34 × 1011 Jones) and fast response time (rise/decay time of 657/671 μs) under 405 nm light illumination in self-powered mode. Finally, high-resolution visible-light and near-infrared imaging capabilities are demonstrated by adopting this dual-heterojunction device as a single pixel, indicating its great application prospects in future optoelectronic systems.
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Affiliation(s)
- Zihao Huang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University Guangzhou 510275 Guangdong P. R. China
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Yuchen Zhou
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
- Honor Device Co.,Ltd Shenzhen 518000 Guangdong P. R. China
| | - Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Yibing Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Mengmeng Yang
- Institute of Semiconductors, South China Normal University Foshan 528225 Guangdong P. R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University Foshan 528225 Guangdong P. R. China
| | - Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University Guangzhou 510275 Guangdong P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Yuhua Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University Guangzhou 510275 Guangdong P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology Guangzhou 510006 Guangdong P. R. China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University Foshan 528225 Guangdong P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology Guangzhou 510631 P. R. China
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28
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Ye Z, Tan C, Huang X, Ouyang Y, Yang L, Wang Z, Dong M. Emerging MoS 2 Wafer-Scale Technique for Integrated Circuits. NANO-MICRO LETTERS 2023; 15:38. [PMID: 36652150 PMCID: PMC9849648 DOI: 10.1007/s40820-022-01010-4] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Accepted: 12/14/2022] [Indexed: 06/17/2023]
Abstract
As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal-organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.
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Affiliation(s)
- Zimeng Ye
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Xiaolei Huang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, 710072, People's Republic of China
| | - Yi Ouyang
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, People's Republic of China.
| | - Mingdong Dong
- Interdisciplinary Nanoscience Center, Aarhus University, 8000, Aarhus C, Denmark.
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29
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Tong T, Gan Y, Li W, Zhang W, Song H, Zhang H, Liao K, Deng J, Li S, Xing Z, Yu Y, Tu Y, Wang W, Chen J, Zhou J, Song X, Zhang L, Wang X, Qin S, Shi Y, Huang W, Wang L. Boosting the Sensitivity of WSe 2 Phototransistor via Janus Interfaces with 2D Perovskite and Ferroelectric Layers. ACS NANO 2023; 17:530-538. [PMID: 36547249 DOI: 10.1021/acsnano.2c09284] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Hybrid systems have recently attracted increasing attention, which combine the special attributes of each constitute and create interesting functionalities through multiple heterointerface interactions. Here, we design a two-dimensional (2D) hybrid phototransistor utilizing Janus-interface engineering, in which the WSe2 channel combines light-sensitive perovskite and spontaneously polarized ferroelectrics, achieving collective ultrasensitive detection performance. The top perovskite (BA2(MA)3Pb4I13) layer can absorb the light efficiently and provide generous photoexcited holes to WSe2. WSe2 exhibit p-type semiconducting states of different degrees due to the selective light-operated doping effect, which also enables the ultrahigh photocurrent of the device. The bottom ferroelectric (Hf0.5Zr0.5O2) layer dramatically decreases the dark current, which should be attributed to the ferroelectric polarization assisted charge trapping effect and improved gate control. As a whole, our phototransistors show excellent photoelectric performances across the ultraviolet to near-infrared range (360-1050 nm), including an ultrahigh ON/OFF current ratio > 109 and low noise-equivalent power of 1.3 fW/Hz1/2, all of which are highly competitive in 2D semiconductor-based optoelectronic devices. In particular, the devices show excellent weak light detection ability, where the distinguishable photoswitching signal is obtained even under a record-low light intensity down to 1.6 nW/cm2, while showing a high responsivity of 2.3 × 105 A/W and a specific detectivity of 4.1 × 1014 Jones. Our work demonstrates that Janus-interface design makes the upper and lower interfaces complement each other for the joint advancement into high-performance optoelectronic applications, providing a picture to realize the integrated engineering on carrier dynamics by light irradiation, electric field, interfacial trapping, and band alignment.
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Affiliation(s)
- Tong Tong
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, Nanjing Tech University, Nanjing211816, China
| | - Yuquan Gan
- School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Weisheng Li
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Wei Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Haizeng Song
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Hehe Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Kan Liao
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Jie Deng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
| | - Si Li
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Ziyue Xing
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an710072, China
| | - Yu Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
| | - Yudi Tu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen518060, China
| | - Wenhui Wang
- School of Physics, Southeast University, Nanjing211189, China
| | - Jinlian Chen
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Jing Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai200083, China
| | - Xuefen Song
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Linghai Zhang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Shuchao Qin
- School of Physical Science and Information Engineering, Liaocheng University, Liaocheng252059, China
| | - Yi Shi
- National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing210023, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an710072, China
| | - Lin Wang
- Key Laboratory of Flexible Electronics and Institute of Advanced Materials, School of Physical and Mathematical Sciences, Nanjing Tech University, Nanjing211816, China
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Shang H, Gao F, Dai M, Hu Y, Wang S, Xu B, Wang P, Gao B, Zhang J, Hu P. Light-Induced Electric Field Enhanced Self-Powered Photodetector Based on Van der Waals Heterojunctions. SMALL METHODS 2023; 7:e2200966. [PMID: 36440646 DOI: 10.1002/smtd.202200966] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Indexed: 06/16/2023]
Abstract
Self-powered photodetectors have attracted widespread attention due to their low power consumption which can be driven by the built-in electric field instead of external power, but it is very difficult to achieve high responsivity and fast response speed concurrently. Here, a self-powered photodetector with light-induced electric field enhancement based on a 2D InSe/WSe2 /SnS2 van der Waals heterojunction is designed. The light-induced electric field derived from the photo-generated electrons of SnS2 accumulated at the SnS2 /WSe2 interface produces an additional negative gate voltage applied to the WSe2 layer, which enhances the built-in electric field in the InSe/WSe2 /SnS2 heterojunction. Accordingly, the photocurrent and photoresponse speed of the heterostructure device are largely improved. The self-powered photodetector based on the InSe/WSe2 /SnS2 heterostructure exhibits a high responsivity of 550 mA W-1 , which is a 50 times increase compared to the InSe/WSe2 photodetector, and the response speed (110/120 µs) is one order of magnitude faster than that of the InSe/WSe2 photodetector. The high responsivity and fast speed are caused by the stronger built-in electric field modulated by a light-induced electric field, which can separate carriers effectively and reduce drift times. This device architecture can provide a new avenue to fabricate high-responsivity, fast self-power photodetectors by utilizing the van der Waals heterojunction.
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Affiliation(s)
- Huiming Shang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - Feng Gao
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - YunXia Hu
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - Shuai Wang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - Bo Xu
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - Peng Wang
- School of Information Engineering, Zhejiang Ocean University, Zhoushan, 316022, China
| | - Bo Gao
- School of physics, Harbin Institute of Technology, Harbin, 150080, China
| | - Jia Zhang
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of mechatronic engineering, Harbin Institute of Technology, Harbin, 150080, China
| | - PingAn Hu
- MOE Key Lab of Micro-System and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, China
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, 150080, China
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150080, China
- State Key Laboratory of Robotics and System, Harbin Institute of Technology, Harbin, 150080, China
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Xiong Y, Xu D, Feng Y, Zhang G, Lin P, Chen X. P-Type 2D Semiconductors for Future Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2206939. [PMID: 36245325 DOI: 10.1002/adma.202206939] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
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Affiliation(s)
- Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Duo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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Yu Y, Shen T, Long H, Zhong M, Xin K, Zhou Z, Wang X, Liu YY, Wakabayashi H, Liu L, Yang J, Wei Z, Deng HX. Doping Engineering in the MoS 2 /SnSe 2 Heterostructure toward High-Rejection-Ratio Solar-Blind UV Photodetection. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206486. [PMID: 36047665 DOI: 10.1002/adma.202206486] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/16/2022] [Revised: 08/19/2022] [Indexed: 06/15/2023]
Abstract
The intentionally designed band alignment of heterostructures and doping engineering are keys to implement device structure design and device performance optimization. According to the theoretical prediction of several typical materials among the transition metal dichalcogenides (TMDs) and group-IV metal chalcogenides, MoS2 and SnSe2 present the largest staggered band offset. The large band offset is conducive to the separation of photogenerated carriers, thus MoS2 /SnSe2 is a theoretically ideal candidate for fabricating photodetector, which is also verified in the experiment. Furthermore, in order to extend the photoresponse spectrum to solar-blind ultraviolet (SBUV), doping engineering is adopted to form an additional electron state, which provides an extra carrier transition channel. In this work, pure MoS2 /SnSe2 and doped MoS2 /SnSe2 heterostructures are both fabricated. In terms of the photoelectric performance evaluation, the rejection ratio R254 /R532 of the photodetector based on doped MoS2 /SnSe2 is five orders of magnitude higher than that of pure MoS2 /SnSe2 , while the response time is obviously optimized by 3 orders. The results demonstrate that the combination of band alignment and doping engineering provides a new pathway for constructing SBUV photodetectors.
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Affiliation(s)
- Yali Yu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Shen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoran Long
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Mianzeng Zhong
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha, 410083, China
| | - Kaiyao Xin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ziqi Zhou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiaoyu Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Hitoshi Wakabayashi
- EE Department, School of Engineering, Tokyo Institute of Technology, Yokohama, 226-8502, Japan
| | - Liyuan Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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Huo D, Bai Y, Lin X, Deng J, Pan Z, Zhu C, Liu C, Yu H, Zhang C. Tuning of the Valley Structures in Monolayer In 2Se 3/WSe 2 Heterostructures via Ferroelectricity. NANO LETTERS 2022; 22:7261-7267. [PMID: 35993689 DOI: 10.1021/acs.nanolett.2c02871] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Recent findings of two-dimensional ferroelectric (FE) materials have enabled the integration of nonvolatile FE functions into device applications based on van der Waals (vdW) heterojunctions (HJs), resulting in versatile technological advances. In this paper, we report the results of direct probing of the electronic structures of In2Se3/WSe2 heterostructures at the single-layer limit, where monolayer (ML)-In2Se3 was found to be either antiferroelectric (AFE, β') or ferroelectric (β*) at sufficiently low temperatures. A general type-II band alignment was revealed for this heterostructure. Moreover, we observed significant modulations of the valley structures of WSe2, and in situ transformations between the FE and AFE In2Se3 phases demonstrated the dominant role of the polarizations in the top ML-In2Se3 layer. The observed phenomena can be attributed to the combination of both the linear and quadratic Stark shifts from the out-of-plane electric field, which has only been previously theoretically explored for ML-transition metal dichalcogenides (TMDs).
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Affiliation(s)
- Da Huo
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Yusong Bai
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Xiaoyu Lin
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Jinghao Deng
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Zemin Pan
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chao Zhu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chuansheng Liu
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Hongyi Yu
- Guangdong Provincial Key Laboratory of Quantum Metrology and Sensing and School of Physics and Astronomy, Sun Yat-Sen University (Zhuhai Campus), Zhuhai 519082, China
- State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University (Guangzhou Campus), Guangzhou 510275, China
| | - Chendong Zhang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
- Wuhan Institute of Quantum Technology, Wuhan 430206, China
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34
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Luo Z, Yang M, Wu D, Huang Z, Gao W, Zhang M, Zhou Y, Zhao Y, Zheng Z, Li J. Rational Design of WSe 2 /WS 2 /WSe 2 Dual Junction Phototransistor Incorporating High Responsivity and Detectivity. SMALL METHODS 2022; 6:e2200583. [PMID: 35871503 DOI: 10.1002/smtd.202200583] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2022] [Revised: 06/24/2022] [Indexed: 06/15/2023]
Abstract
The excellent semiconducting properties and ultrathin morphological characteristics allow van der Waals (vdW) heterostructures based on 2D materials to be promising channel materials for the next-generation optoelectronic devices, especially in photodetectors. Although various 2D heterostructure-based photodetectors have been developed, the unavoidable trade-off between responsivity and detectivity remains a critical issue for these devices. Here, an ingenious phototransistor based on WSe2 /WS2 /WSe2 dual-vdW heterostructures is constructed, performing both high responsivity and detectivity. In the charge neutrality point (gate voltage of -15 V and bias voltage of 1 V), this device demonstrates a pronounced photosensitivity, accompanying with high detectivity of 1.9 × 1014 Jones, high responsivity of 35.4 A W-1 , and fast rise/fall time of 3.2/2.5 ms at 405 nm with power density of 60 µW cm-2 . Density functional theory calculations, energy band profiles, and optoelectronic characteristics jointly verify that the high performance is ascribed to the distinctive device design, which not only facilitates the separation of photogenerated carriers but also produces a strong photogating effect. As a feasible application, an automotive radar system is demonstrated, proving that the device has considerable potential for application in vehicle intelligent assisted driving.
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Affiliation(s)
- Zhongtong Luo
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Dongsi Wu
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zihao Huang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Wei Gao
- Institute of Semiconductors, South China Normal University, Guangzhou, Guangdong, 510631, P. R. China
| | - Menglong Zhang
- Institute of Semiconductors, South China Normal University, Guangzhou, Guangdong, 510631, P. R. China
| | - Yuchen Zhou
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, School of Materials and Energy, Guangdong University of Technology, Guangzhou, Guangdong, 510006, P. R. China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University, Guangzhou, Guangdong, 510631, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, Guangzhou, Guangdong, 510631, P. R. China
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Co-assembled perylene/graphene oxide photosensitive heterobilayer for efficient neuromorphics. Nat Commun 2022; 13:4996. [PMID: 36008407 PMCID: PMC9411554 DOI: 10.1038/s41467-022-32725-y] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/17/2022] [Accepted: 08/11/2022] [Indexed: 11/09/2022] Open
Abstract
Neuromorphic electronics, which use artificial photosensitive synapses, can emulate biological nervous systems with in-memory sensing and computing abilities. Benefiting from multiple intra/interactions and strong light-matter coupling, two-dimensional heterostructures are promising synaptic materials for photonic synapses. Two primary strategies, including chemical vapor deposition and physical stacking, have been developed for layered heterostructures, but large-scale growth control over wet-chemical synthesis with comprehensive efficiency remains elusive. Here we demonstrate an interfacial coassembly heterobilayer films from perylene and graphene oxide (GO) precursors, which are spontaneously formed at the interface, with uniform bilayer structure of single-crystal perylene and well-stacked GO over centimeters in size. The planar heterostructure device exhibits an ultrahigh specific detectivity of 3.1 × 1013 Jones and ultralow energy consumption of 10−9 W as well as broadband photoperception from 365 to 1550 nm. Moreover, the device shows outstanding photonic synaptic behaviors with a paired-pulse facilitation (PPF) index of 214% in neuroplasticity, the heterosynapse array has the capability of information reinforcement learning and recognition. Layered heterostructures are promising photosensitive materials for advanced optoelectronics. Here, the authors introduce an interfacial coassembly method to construct large-scale perylene/grahene oxide (GO) heterobilayer for broadband photoreception and efficient neuromorphics.
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36
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Chen C, Yang S, Lin C, Lee M, Tsai M, Yang F, Chang Y, Li M, Lee K, Ueno K, Shi Y, Lien C, Wu W, Chiu P, Li W, Lo S, Lin Y. Reversible Charge-Polarity Control for Multioperation-Mode Transistors Based on van der Waals Heterostructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2106016. [PMID: 35831244 PMCID: PMC9404391 DOI: 10.1002/advs.202106016] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/27/2021] [Revised: 04/29/2022] [Indexed: 06/15/2023]
Abstract
Van der Waals (vdW) heterostructures-in which layered materials are purposely selected to assemble with each other-allow unusual properties and different phenomena to be combined and multifunctional electronics to be created, opening a new chapter for the spread of internet-of-things applications. Here, an O2 -ultrasensitive MoTe2 material and an O2 -insensitive SnS2 material are integrated to form a vdW heterostructure, allowing the realization of charge-polarity control for multioperation-mode transistors through a simple and effective rapid thermal annealing strategy under dry-air and vacuum conditions. The charge-polarity control (i.e., doping and de-doping processes), which arises owing to the interaction between O2 adsorption/desorption and tellurium defects at the MoTe2 surface, means that the MoTe2 /SnS2 heterostructure transistors can reversibly change between unipolar, ambipolar, and anti-ambipolar transfer characteristics. Based on the dynamic control of the charge-polarity properties, an inverter, output polarity controllable amplifier, p-n diode, and ternary-state logics (NMIN and NMAX gates) are demonstrated, which inspire the development of reversibly multifunctional devices and indicates the potential of 2D materials.
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Affiliation(s)
- Ciao‐Fen Chen
- Department of Electrophysics and Center for Emergent Functional Matter Science (CEFMS)National Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
| | - Shih‐Hsien Yang
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology (Ministry of Education)Engineering Technology Research Center for 2D Material Information Functional Devices and Systems (Guangdong Province)Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060China
| | - Che‐Yi Lin
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
| | - Mu‐Pai Lee
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- Department of Materials Science and EngineeringNational Yang Ming Chiao Tung UniversityHsinchu300Taiwan
| | - Meng‐Yu Tsai
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Feng‐Shou Yang
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Yuan‐Ming Chang
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
| | - Mengjiao Li
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
| | - Ko‐Chun Lee
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Keiji Ueno
- Department of ChemistryGraduate School of Science and EngineeringSaitama UniversitySaitama338–8570Japan
| | - Yumeng Shi
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology (Ministry of Education)Engineering Technology Research Center for 2D Material Information Functional Devices and Systems (Guangdong Province)Institute of Microscale OptoelectronicsShenzhen UniversityShenzhen518060China
| | - Chen‐Hsin Lien
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Wen‐Wei Wu
- Department of Materials Science and EngineeringNational Yang Ming Chiao Tung UniversityHsinchu300Taiwan
- Center for the Intelligent Semiconductor Nano‐system Technology ResearchNational Yang Ming Chiao Tung UniversityHsinchu300Taiwan
| | - Po‐Wen Chiu
- Institute of Electronics EngineeringNational Tsing Hua UniversityHsinchu30013Taiwan
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Zhangjiang Fudan International Innovation CenterInstitute of OptoelectronicsDepartment of Materials ScienceFudan UniversityShanghai200433China
| | - Shun‐Tsung Lo
- Department of Electrophysics and Center for Emergent Functional Matter Science (CEFMS)National Yang Ming Chiao Tung UniversityHsinchu30010Taiwan
| | - Yen‐Fu Lin
- Department of PhysicsNational Chung Hsing UniversityTaichung40227Taiwan
- Department of Materials Science and EngineeringInstitute of Nanosciencei‐Center for Advanced Science and Technology (i‐CAST)National Chung Hsing UniversityTaichung40227Taiwan
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37
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Jiang Y, Zhang L, Wang R, Li H, Li L, Zhang S, Li X, Su J, Song X, Xia C. Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse. ACS NANO 2022; 16:11218-11226. [PMID: 35730563 DOI: 10.1021/acsnano.2c04271] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric field-effect transistors (Fe-FET) are promising candidates for future information devices. However, they suffer from low endurance and short retention time, which retards the application of processing memory in the same physical processes. Here, inspired by the ferroelectric proximity effects, we design a reconfigurable two-dimensional (2D) MoS2 transistor featuring with asymmetric ferroelectric gate, exhibiting high memory and logic ability with a program/erase ratio of over 106 and a self-rectifying ratio of 103. Interestingly, the robust electric and optic cycling are obtained with a large switching ratio of 106 and nine distinct resistance states upon optical excitation with excellent nonvolatile characteristics. Meanwhile, the operation of memory mimics the synapse behavior in response to light spikes with different intensity and number. This design realizes an integration of robust processing memory in one single device, which demonstrates a considerable potential of an asymmetric ferroelectric gate in the development of Fe-FETs for logic processing and nonvolatile memory applications.
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Affiliation(s)
- Yurong Jiang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Linlin Zhang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Rui Wang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Hongzhi Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Lin Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Suicai Zhang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Xueping Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Jian Su
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Xiaohui Song
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Congxin Xia
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
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Shen Z, Zhang C, Meng Y, Wang Z. Highly Tunable, Broadband, and Negative Photoresponse MoS 2 Photodetector Driven by Ion-Gel Gate Dielectrics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:32412-32419. [PMID: 35816428 DOI: 10.1021/acsami.2c08341] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Abstract
Revealing the light-matter interaction of molybdenum disulfide (MoS2) and further improving its tunability facilitate the construction of highly integrated optoelectronics in communication and wearable healthcare, but it still remains a significant challenge. Herein, polyvinylidene fluoride and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (PVDF-EMIM-TFSI) ion-gel are employed to replace the oxide to fabricate a MoS2-based phototransistor. The high capacitance enables a large tunability of the carrier concentration that results in ambipolar transport of MoS2. It is found that the photoelectrical effect of the MoS2 ion-gel phototransistor can be greatly tuned by the gate voltage including its photoresponsivity, detectivity, and response wavelength. An abnormal negative photoelectrical effect in both the electron branch and the hole branch is observed which is due to the adsorption/desorption of the C2F6NO4S2- ion. By tuning the carrier concentration, the photoresponse can be extended from the visible region to the short infrared region. At 1200 nm, the photoresponse and detectivity can be tuned as large as 0.90 A/W and 1.88 × 1011 Jones, respectively. Ultimately, by combining the tunability of gate voltage and wavelength, it is demonstrated that the photoelectrical effect is dominated by the photogating effect in the hole carrier, while it is coregulated by a photogating and photothermal effect in electron carrier. This study provides new insights for developing a highly tunable broadband photodetector with low consumption.
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Affiliation(s)
- Zhenzhen Shen
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Chunchi Zhang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
| | - Yajing Meng
- Mental Health Center and Psychiatric Laboratory, the State Key Laboratory of Biotherapy, West China Hospital of Sichuan University, Chengdu 610065, China
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China
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Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains. Nat Commun 2022; 13:3198. [PMID: 35680950 PMCID: PMC9184637 DOI: 10.1038/s41467-022-30951-y] [Citation(s) in RCA: 36] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2022] [Accepted: 05/18/2022] [Indexed: 11/09/2022] Open
Abstract
With the further miniaturization and integration of multi-dimensional optical information detection devices, polarization-sensitive photodetectors based on anisotropic low-dimension materials have attractive potential applications. However, the performance of these devices is restricted by intrinsic property of materials leading to a small polarization ratio of the detectors. Here, we construct a black phosphorus (BP) homojunction photodetector defined by ferroelectric domains with ultra-sensitive polarization photoresponse. With the modulation of ferroelectric field, the BP exhibits anisotropic dispersion changes, leading an increased photothermalelectric (PTE) current in the armchair (AC) direction. Moreover, the PN junction can promote the PTE current and accelerate carrier separation. As a result, the BP photodetector demonstrates an ultrahigh polarization ratio (PR) of 288 at 1450 nm incident light, a large photoresponsivity of 1.06 A/W, and a high detectivity of 1.27 × 1011 cmHz1/2W−1 at room temperature. This work reveals the great potential of BP in future polarized light detection. Integrated polarization-sensitive photodetectors are important for sensing applications and optical communication. Here, the authors report the realization of 2D black phosphorus homojunction photodetectors defined by ferroelectric substrates, showing polarization ratios up to 288 and high responsivity in the near-infrared.
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Zhao K, Wei Z, Xia J. 主族层状低维半导体的偏振光探测器. CHINESE SCIENCE BULLETIN-CHINESE 2022. [DOI: 10.1360/tb-2022-0126] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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41
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 89] [Impact Index Per Article: 44.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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42
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Guan Z, Zhao Y, Wang X, Zhong N, Deng X, Zheng Y, Wang J, Xu D, Ma R, Yue F, Cheng Y, Huang R, Xiang P, Wei Z, Chu J, Duan C. Electric-Field-Induced Room-Temperature Antiferroelectric-Ferroelectric Phase Transition in van der Waals Layered GeSe. ACS NANO 2022; 16:1308-1317. [PMID: 34978807 DOI: 10.1021/acsnano.1c09183] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Searching van der Waals ferroic materials that can work under ambient conditions is of critical importance for developing ferroic devices at the two-dimensional limit. Here we report the experimental discovery of electric-field-induced reversible antiferroelectric (AFE) to ferroelectric (FE) transition at room temperature in van der Waals layered α-GeSe, employing Raman spectroscopy, transmission electron microscopy, second-harmonic generation, and piezoelectric force microscopy consolidated by first-principles calculations. An orientation-dependent AFE-FE transition provides strong evidence that the in-plane (IP) polarization vector aligns along the armchair rather than zigzag direction in α-GeSe. In addition, temperature-dependent Raman spectra showed that the IP polarization could sustain up to higher than 700 K. Our findings suggest that α-GeSe, which is also a potential ferrovalley material, could be a robust building block for creating artificial 2D multiferroics at room temperature.
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Affiliation(s)
- Zhao Guan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Yifeng Zhao
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Xiaoting Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Xing Deng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Yunzhe Zheng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Jinjin Wang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Dongdong Xu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Ruru Ma
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Fangyu Yue
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Yan Cheng
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Rong Huang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Pinghua Xiang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, 500 Dongchuan Road, Shanghai 200241, China
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
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Wang X, Xiong T, Zhao K, Zhou Z, Xin K, Deng HX, Kang J, Yang J, Liu YY, Wei Z. Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107206. [PMID: 34676919 DOI: 10.1002/adma.202107206] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2021] [Revised: 10/20/2021] [Indexed: 06/13/2023]
Abstract
2D materials have been attracting high interest in recent years due to their low structural symmetry, excellent photoresponse, and high air stability. However, most 2D materials can only respond to specific light, which limits the development of wide-spectrum photodetectors. Proper bandgap and the regulation of Fermi level are the foundations for realizing electronic multichannel transition, which is an effective method to achieve a wide spectral response. Herein, a noble 2D material, palladium phosphide sulfide (PdPS), is designed and synthesized. The bandgap of PdPS is around 2.1 eV and the formation of S vacancies, interstitial Pd and P atoms promote the Fermi level very close to the conduction band. Therefore, the PdPS-based photodetector shows impressive wide spectral response from solar-blind ultraviolet to near-infrared based on the multichannel transition. It also exhibits superior optoelectrical properties with photoresponsivity (R) of 1 × 103 A W-1 and detectivity (D*) of 4 × 1011 Jones at 532 nm. Moreover, PdPS exhibits good performance of polarization detection with dichroic ratio of ≈3.7 at 808 nm. Significantly, it achieves polarimetric imaging and hidden-target detection in complex environments through active detection.
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Affiliation(s)
- Xingang Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Xiong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kai Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Ziqi Zhou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kaiyao Xin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jun Kang
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, China
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