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Chen S, Liang Z, Miao J, Yu XL, Wang S, Zhang Y, Wang H, Wang Y, Cheng C, Long G, Wang T, Wang L, Zhang H, Chen X. Infrared optoelectronics in twisted black phosphorus. Nat Commun 2024; 15:8834. [PMID: 39397018 PMCID: PMC11471851 DOI: 10.1038/s41467-024-53125-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Accepted: 10/02/2024] [Indexed: 10/15/2024] Open
Abstract
Electrons and holes, fundamental charge carriers in semiconductors, dominate optical transitions and detection processes. Twisted van der Waals (vdW) heterostructures offer an effective approach to manipulate radiation, separation, and collection processes of electron-hole pairs by creating an atomically sharp interface. Here, we demonstrate that twisted interfaces in vdW layered black phosphorus (BP), an infrared semiconductor with highly anisotropic crystalline structure and properties, can significantly alter both recombination and separation processes of electron-hole pairs. On the one hand, the twisted interface breaks the symmetry of optical transition states resulting in infrared light emission of originally symmetry-forbidden optical states along the zigzag direction. On the other hand, spontaneous electronic polarization/bulk photovoltaic effect is generated at the twisted interface enabling effective separation of electron-hole pairs without external voltage bias. This is supported by first-principles calculations and repeated experiments at various twisted angles from 0 to 90°. Importantly, these phenomena can be observed in twisted heterostructures with thickness beyond two-dimensional. Our results suggest that the engineering of vdW twisted interfaces is an effective strategy for manipulating the optoelectronic properties of materials and constructing functional devices.
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Affiliation(s)
- Shouheng Chen
- Department of Electronic and Electrical Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Zihan Liang
- Department of Electronic and Electrical Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Xiang-Long Yu
- School of Science, Shenzhen Campus of Sun Yat-sen University, Shenzhen, 518107, China.
| | - Shuo Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, China
| | - Yule Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, China
| | - Han Wang
- Department of Electronic and Electrical Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Yun Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Gen Long
- Suzhou Laboratory, Suzhou, 215123, China
| | - Taihong Wang
- Department of Electronic and Electrical Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, China
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen, 518060, China.
| | - Xiaolong Chen
- Department of Electronic and Electrical Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China.
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Gao Y, Yang M, Zou W, Zhou J, Zhang C. Band-Edge Mixture Engineered Giant and Switchable Shift Current Generation. NANO LETTERS 2024; 24:12560-12567. [PMID: 39331415 DOI: 10.1021/acs.nanolett.4c03520] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2024]
Abstract
Two-dimensional materials have enormous development prospects in the bulk photovoltaic effect (BPVE). The enhancement and manipulation of the BPVE are some of the key roles of its various applications. Through a simplified Hamiltonian model, this work shows that a substantial band mixture between occupied and unoccupied states could produce a large optical absorption rate with trivial topological features, resulting in a significantly enhanced shift current generation. Furthermore, this mechanism is illustrated in a realistic C3B/C3N bilayer material based on density functional theory calculation and tight-binding model. As each layer of C3B/C3N is centrosymmetric, the in-plane shift current arises from the interfacial interaction. The electron transfer between the layers gives a controllable band mixture, which offers a giant shift current reaching over ∼1500 μA/V2. In addition, we propose that interlayer sliding could reverse the in-plane shift current. Our work suggests a feasible approach for giant and switchable nonlinear optical processes.
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Affiliation(s)
- Yue Gao
- School of Physics, Northwest University, Xi'an 710127, China
| | - Mengtong Yang
- School of Physics, Northwest University, Xi'an 710127, China
| | - Wenli Zou
- School of Physics, Northwest University, Xi'an 710127, China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Chunmei Zhang
- School of Physics, Northwest University, Xi'an 710127, China
- Shaanxi Key Laboratory for Theoretical Physics Frontiers, Xi'an 710127, China
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Sarkar S, Han Z, Ghani MA, Strkalj N, Kim JH, Wang Y, Jariwala D, Chhowalla M. Multistate Ferroelectric Diodes with High Electroresistance Based on van der Waals Heterostructures. NANO LETTERS 2024. [PMID: 39382966 DOI: 10.1021/acs.nanolett.4c03360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/11/2024]
Abstract
Some van der Waals (vdW) materials exhibit ferroelectricity, making them promising for novel nonvolatile memories (NVMs) such as ferroelectric diodes (FeDs). CuInP2S6 (CIPS) is a well-known vdW ferroelectric that has been integrated with graphene for memory devices. Here we demonstrate FeDs with self-rectifying, hysteretic current-voltage characteristics based on vertical heterostructures of 10 nm thick CIPS and graphene. By using vdW indium-cobalt top electrodes and graphene bottom electrodes, we achieve a high electroresistance (on- and off-state resistance ratios) of ∼106, an on-state rectification ratio of 2500 for read/write voltages of 2 V/0.5 V, and a maximum output current density of 100 A/cm2. These metrics compare favorably with state-of-the-art FeDs. Piezoresponse force microscopy measurements show that stabilization of intermediate net polarization states in CIPS leads to stable multibit data retention at room temperature. The combination of two-terminal design, multibit memory, and low-power operation in CIPS-based FeDs is potentially interesting for compute-in-memory and neuromorphic computing applications.
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Affiliation(s)
- Soumya Sarkar
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Zirun Han
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Maheera Abdul Ghani
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Nives Strkalj
- Center for Advanced Laser Techniques, Institute of Physics, 10000 Zagreb, Croatia
| | - Jung Ho Kim
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Yan Wang
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Manish Chhowalla
- Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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Tsang CS, Zheng X, Ly TH, Zhao J. Recent progresses in transmission electron microscopy studies of two-dimensional ferroelectrics. Micron 2024; 185:103678. [PMID: 38941681 DOI: 10.1016/j.micron.2024.103678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2024] [Revised: 06/03/2024] [Accepted: 06/13/2024] [Indexed: 06/30/2024]
Abstract
The rich potential of two-dimensional materials endows them with superior properties suitable for a wide range of applications, thereby attracting substantial interest across various fields. The ongoing trend towards device miniaturization aligns with the development of materials at progressively smaller scales, aiming to achieve higher integration density in electronics. In the realm of nano-scaling ferroelectric phenomena, numerous new two-dimensional ferroelectric materials have been predicted theoretically and subsequently validated through experimental confirmation. However, the capabilities of conventional tools, such as electrical measurements, are limited in providing a comprehensive investigation into the intrinsic origins of ferroelectricity and its interactions with structural factors. These factors include stacking, doping, functionalization, and defects. Consequently, the progress of potential applications, such as high-density memory devices, energy conversion systems, sensing technologies, catalysis, and more, is impeded. In this paper, we present a review of recent research that employs advanced transmission electron microscopy (TEM) techniques for the direct visualization and analysis of ferroelectric domains, domain walls, and other crucial features at the atomic level within two-dimensional materials. We discuss the essential interplay between structural characteristics and ferroelectric properties on the nanoscale, which facilitates understanding of the complex relationships governing their behavior. By doing so, we aim to pave the way for future innovative applications in this field.
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Affiliation(s)
- Chi Shing Tsang
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China; Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Xiaodong Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China; Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Hong Kong, China; City University of Hong Kong Shenzhen Research Institute, Shenzhen, China.
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China; The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China; The Research Institute for Advanced Manufacturing, The Hong Kong polytechnic University, Hong Kong, China.
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5
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Wang Y, Zeng Z, Tian Z, Li C, Braun K, Huang L, Li Y, Luo X, Yi J, Wu G, Liu G, Li D, Zhou Y, Chen M, Wang X, Pan A. Sliding Ferroelectricity Induced Ultrafast Switchable Photovoltaic Response in ε-InSe Layers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2410696. [PMID: 39276006 DOI: 10.1002/adma.202410696] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/23/2024] [Revised: 09/04/2024] [Indexed: 09/16/2024]
Abstract
2D sliding ferroelectric semiconductors have greatly expanded the ferroelectrics family with the flexibility of bandgap and material properties, which hold great promise for ultrathin device applications that combine ferroelectrics with optoelectronics. Besides the induced different resistance states for non-volatile memories, the switchable ferroelectric polarizations can also modulate the photogenerated carriers for potentially ultrafast optoelectronic devices. Here, it is demonstrated that the room temperature sliding ferroelectricity can be used for ultrafast switchable photovoltaic response in ε-InSe layers. By first-principles calculations and experimental characterizations, it is revealed that the ferroelectricity with out-of-plane (OOP) polarization only exists in even layer ε-InSe. The ferroelectricity is also demonstrated in ε-InSe-based vertical devices, which exhibit high on-off ratios (≈104) and non-volatile storage capabilities. Moreover, the OOP ferroelectricity enables an ultrafast (≈3 ps) bulk photovoltaic response in the near-infrared band, rendering it a promising material for self-powered reconfigurable and ultrafast photodetector. This work reveals the essential role of ferroelectric polarization on the photogenerated carrier dynamics and paves the way for hybrid multifunctional ferroelectric and optoelectronic devices.
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Affiliation(s)
- Yufan Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhouxiaosong Zeng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiqiang Tian
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
| | - Cheng Li
- School of Physics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, 410083, China
| | - Kai Braun
- Institute of Physical and Theoretical Chemistry and LISA+, University of Tübingen, 72076, Tübingen, Germany
| | - Lanyu Huang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yang Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Xinyi Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guangcheng Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guixian Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yu Zhou
- School of Physics, Hunan Key Laboratory of Nanophotonics and Devices, Central South University, Changsha, 410083, China
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Anlian Pan
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
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6
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Xue Q, Sun Y, Zhou J. Nonlinear Optics-Driven Spin Reorientation in Ferromagnetic Materials. ACS NANO 2024; 18:24317-24326. [PMID: 39172468 DOI: 10.1021/acsnano.4c06453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
Based on nonlinear optics, we propose that light irradiation could induce a nonequilibrium steady state magnetization variation. We formulize a band theory to elucidate its general microscopic mechanisms, which are rooted by the quantum geometric structure and topological nature of electronic Bloch wave functions. The existence is determined by the light polarization and specific material symmetry, based on the magnetic group theory. In general, for a magnetic system, both circularly and linearly polarized light could exert an effective magnetic field and a magnetic "velocity" (magnetization variation rate over time, serving as an effective torque) to reorient the magnetization direction. They are contributed by spin and orbital angular momenta simultaneously. Aided by group theory and first-principles calculations, we illustrate this theory using a showcase example of monolayer NiCl2, showing that light irradiation effectively generates an out-of-plane effective magnetic torque, which lifts its in-plane easy magnetization. According to magnetic dynamic simulations, under light with a modest intensity, this switching could occur on the order of 0.1-1 ns time scale, demonstrating its ultrafast nature that is desirable for quantum manipulation.
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Affiliation(s)
- Qianqian Xue
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yan Sun
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, China
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7
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Li D, Li Z, Pan C, Sun Y, Zhou J, Yangdong X, Xu X, Liu L, Wang H, Chen Y, Song X, Liu P, Zhou X, Liang SJ, Miao F, Zhai T. Ionic Photovoltaics-in-Memory in van der Waals Material. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2406984. [PMID: 39039978 DOI: 10.1002/adma.202406984] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Revised: 07/15/2024] [Indexed: 07/24/2024]
Abstract
The photovoltaic effect is gaining growing attention in the optoelectronics field due to its low power consumption, sustainable nature, and high efficiency. However, the photovoltaic effects hitherto reported are hindered by the stringent band-alignment requirement or inversion symmetry-breaking, and are challenging for achieving multifunctional photovoltaic properties (such as reconfiguration, nonvolatility, and so on). Here, a novel ionic photovoltaic effect in centrosymmetric CdSb2Se3Br2 that can overcome these limitations is demonstrated. The photovoltaic effect displays significant anisotropy, with the photocurrent being most apparent along the CdBr2 chains while absent perpendicular to them. Additionally, the device shows electrically-induced nonvolatile photocurrent switching characteristics. The photovoltaic effect is attributed to the modulation of the built-in electric field through the migration of Br ions. Using these unique photovoltaic properties, a highly secure circuit with electrical and optical keys is successfully implemented. The findings not only broaden the understanding of the photovoltaic mechanism, but also provide a new material platform for the development of in-memory sensing and computing devices.
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Affiliation(s)
- Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Chen Pan
- Institute of Interdisciplinary of Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing, 210094, P. R. China
| | - Yan Sun
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Jian Zhou
- Center for Alloy Innovation and Design, State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, 710049, P. R. China
| | - Xingjian Yangdong
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Xiang Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Lixin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yunxin Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xingyu Song
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Pengbin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Shi-Jun Liang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Feng Miao
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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8
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Wu S, Ma Y, Zhang Y, He Y, Wang Q, Zhao R, Fu D. Exploiting the Cationic Size Effect to Improve the Curie Temperature of Hybrid Perovskites Photoferroelectric Semiconductors. Inorg Chem 2024; 63:16095-16102. [PMID: 39136321 DOI: 10.1021/acs.inorgchem.4c02778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/27/2024]
Abstract
Ferroelectric materials with Curie temperature (Tc) below room temperature severely limit their practical applications. Although research on hybrid perovskite photoferroelectrics is ongoing, effective regulation of Tc still poses significant challenges. Herein, we utilized the cationic size effect to successfully regulate the Tc of hybrid perovskite photoferroelectric semiconductors. As the perovskitizer was replaced by a smaller-sized MA+ (methylammonium) with a larger-sized EA+ (ethylammonium), not only was the ferroelectricity of the hybrid perovskite well maintained but the Tc of (PA)2(MA)2Pb3Br10 (315 K) to (PA)2(EA)2Pb3Br10 (385 K) (PA is n-propylaminium) increased by 70 K, which was mainly due to the significant increase in the energy barriers that the system needed to overcome during the phase transition. Subsequently, we achieved efficient self-powered X-ray detection through the ferroelectric-induced bulk photovoltaic effect (BPVE) in (PA)2(EA)2Pb3Br10. The devices based on (PA)2(EA)2Pb3Br10 single crystals exhibit an outstanding sensitivity of 95 μC Gy-1 cm-2 and a low detection limit of 239 nGy s-1 at 0 V bias under X-ray radiation. This study provides an effective approach for designing and constructing high-temperature multilayer photoferroelectric semiconductors in the future.
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Affiliation(s)
- Shufang Wu
- Institute of Crystalline Materials, Shanxi University, Taiyuan, Shanxi 030006, PR China
| | - Yanli Ma
- Institute of Crystalline Materials, Shanxi University, Taiyuan, Shanxi 030006, PR China
| | - Yue Zhang
- Institute of Crystalline Materials, Shanxi University, Taiyuan, Shanxi 030006, PR China
| | - Yueyue He
- Institute of Crystalline Materials, Shanxi University, Taiyuan, Shanxi 030006, PR China
| | - Qi Wang
- Institute of Crystalline Materials, Shanxi University, Taiyuan, Shanxi 030006, PR China
| | - Ruifang Zhao
- Institute of Crystalline Materials, Shanxi University, Taiyuan, Shanxi 030006, PR China
| | - Dongying Fu
- Institute of Crystalline Materials, Shanxi University, Taiyuan, Shanxi 030006, PR China
- Key Laboratory of Quantum Optics and Quantum Optics Devices, Shanxi University, Taiyuan, Shanxi 030006, PR China
- Key Laboratory of Energy Storage Materials Innovation and Integration of Shanxi Province, Taiyuan, Shanxi 030006, PR China
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9
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Gu J, Mou Y, Ma J, Chen H, Zhang C, Wang Y, Wang J, Guo H, Shi W, Yuan X, Jiang X, Ta D, Shen J, Zhang C. Acousto-Drag Photovoltaic Effect by Piezoelectric Integration of Two-Dimensional Semiconductors. NANO LETTERS 2024; 24:10322-10330. [PMID: 39133825 DOI: 10.1021/acs.nanolett.4c02941] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/22/2024]
Abstract
Light-to-electricity conversion is crucial for energy harvesting and photodetection, requiring efficient electron-hole pair separation to prevent recombination. Traditional junction-based mechanisms using built-in electric fields fail in nonbarrier regions. Homogeneous material harvesting under a photovoltaic effect is appealing but is only realized in noncentrosymmetric systems via a bulk photovoltaic effect. Here we report the realization of a photovoltaic effect by employing surface acoustic waves (SAWs) to generate zero-bias photocurrent in the conventional layered semiconductor MoSe2. SAWs induce periodic modulation to electronic bands and drag the photoexcited pairs toward the traveling direction. The photocurrent is extracted from a local barrier. The separation of generation and extraction processes suppresses recombination and yields a large nonlocal photoresponse. We distinguish the acousto-electric drag and electron-hole pair separation effect by fabricating devices of different configurations. The acousto-drag photovoltaic effect, enabled by piezoelectric integration, offers an efficient light-to-electricity conversion method, independent of semiconductor crystal symmetry.
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Affiliation(s)
- Jiaming Gu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Yicheng Mou
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Jianwen Ma
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Haonan Chen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Chuanxin Zhang
- Center for Biomedical Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, People's Republic of China
| | - Yuxiang Wang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Jiayu Wang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
| | - Hangwen Guo
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
- Shanghai Qi Zhi Institute, Shanghai 200232, People's Republic of China
| | - Wu Shi
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
| | - Xiang Yuan
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200241, People's Republic of China
- School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Xue Jiang
- Center for Biomedical Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, People's Republic of China
| | - Dean Ta
- Center for Biomedical Engineering, School of Information Science and Technology, Fudan University, Shanghai 200433, People's Republic of China
| | - Jian Shen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
- Shanghai Qi Zhi Institute, Shanghai 200232, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People's Republic of China
| | - Cheng Zhang
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
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10
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Sangwan VK, Chica DG, Chu TC, Cheng M, Quintero MA, Hao S, Mead CE, Choi H, Zu R, Sheoran J, He J, Liu Y, Qian E, Laing CC, Kang MA, Gopalan V, Wolverton C, Dravid VP, Lauhon LJ, Hersam MC, Kanatzidis MG. Bulk photovoltaic effect and high mobility in the polar 2D semiconductor SnP 2Se 6. SCIENCE ADVANCES 2024; 10:eado8272. [PMID: 39083609 PMCID: PMC11290483 DOI: 10.1126/sciadv.ado8272] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Accepted: 06/26/2024] [Indexed: 08/02/2024]
Abstract
The growth of layered 2D compounds is a key ingredient in finding new phenomena in quantum materials, optoelectronics, and energy conversion. Here, we report SnP2Se6, a van der Waals chiral (R3 space group) semiconductor with an indirect bandgap of 1.36 to 1.41 electron volts. Exfoliated SnP2Se6 flakes are integrated into high-performance field-effect transistors with electron mobilities >100 cm2/Vs and on/off ratios >106 at room temperature. Upon excitation at a wavelength of 515.6 nanometer, SnP2Se6 phototransistors show high gain (>4 × 104) at low intensity (≈10-6 W/cm2) and fast photoresponse (< 5 microsecond) with concurrent gain of ≈52.9 at high intensity (≈56.6 mW/cm2) at a gate voltage of 60 V across 300-nm-thick SiO2 dielectric layer. The combination of high carrier mobility and the non-centrosymmetric crystal structure results in a strong intrinsic bulk photovoltaic effect; under local excitation at normal incidence at 532 nm, short circuit currents exceed 8 mA/cm2 at 20.6 W/cm2.
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Affiliation(s)
- Vinod K. Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Daniel G. Chica
- Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
| | - Ting-Ching Chu
- Applied Physics Graduate Program, Northwestern University, Evanston, IL 60208, USA
| | - Matthew Cheng
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | | | - Shiqiang Hao
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Christopher E. Mead
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Hyeonseon Choi
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Rui Zu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Jyoti Sheoran
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Jingyang He
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Yukun Liu
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Eric Qian
- Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
| | - Craig C. Laing
- Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
| | - Min-A Kang
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Venkatraman Gopalan
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Chris Wolverton
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Vinayak P. Dravid
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Lincoln J. Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Mark C. Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
- Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
- Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, IL 60208, USA
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11
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Cao Y, Cao A, Li S, Tang J, Hu R, Shang L, Li Y, Jiang K, Zhang J, Zhu L, Hu Z. Bias-dependent photoresponse of T d-WTe 2grown by chemical vapor deposition. NANOTECHNOLOGY 2024; 35:395201. [PMID: 38955161 DOI: 10.1088/1361-6528/ad5dbf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2024] [Accepted: 07/02/2024] [Indexed: 07/04/2024]
Abstract
The type-II Weyl semimetal Td-WTe2is one of the wonder materials for high-performance optoelectronic devices. We report the self-powered Td-WTe2photodetectors and their bias-dependent photoresponse in the visible region (405, 520, 638 nm) driven by the bulk photovoltaic effect. The device shows the responsivity of 15.8 mAW-1and detectivity of 5.2 × 109Jones at 520 nm. Besides, the response time of the WTe2photodetector shows the strong bias-voltage dependent property. This work offers a physical reference for understanding the photoresponse process of Td-WTe2photodetectors.
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Affiliation(s)
- Yupeng Cao
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Aiping Cao
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Shubing Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Jianli Tang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Rui Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Liyan Shang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Yawei Li
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Kai Jiang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Jinzhong Zhang
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Liangqing Zhu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Zhigao Hu
- Technical Center for Multifunctional Magneto-Optical Spectroscopy (Shanghai), Engineering Research Center of Nanophotonics and Advanced Instrument (Ministry of Education), Department of Physics, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, People's Republic of China
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12
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Xie X, Leng P, Ding Z, Yang J, Yan J, Zhou J, Li Z, Ai L, Cao X, Jia Z, Zhang Y, Zhao M, Zhu W, Gao Y, Dong S, Xiu F. Surface photogalvanic effect in Ag 2Te. Nat Commun 2024; 15:5651. [PMID: 38969644 PMCID: PMC11226672 DOI: 10.1038/s41467-024-49576-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Accepted: 06/11/2024] [Indexed: 07/07/2024] Open
Abstract
The bulk photovoltaic effect (BPVE) in non-centrosymmetric materials has attracted significant attention in recent years due to its potential to surpass the Shockley-Queisser limit. Although these materials are strictly constrained by symmetry, progress has been made in artificially reducing symmetry to stimulate BPVE in wider systems. However, the complexity of these techniques has hindered their practical implementation. In this study, we demonstrate a large intrinsic photocurrent response in centrosymmetric topological insulator Ag2Te, attributed to the surface photogalvanic effect (SPGE), which is induced by symmetry reduction of the surface. Through diverse spatially-resolved measurements on specially designed devices, we directly observe that SPGE in Ag2Te arises from the difference between two opposite photocurrent flows generated from the top and bottom surfaces. Acting as an efficient SPGE material, Ag2Te demonstrates robust performance across a wide spectral range from visible to mid-infrared, making it promising for applications in solar cells and mid-infrared detectors. More importantly, SPGE generated on low-symmetric surfaces can potentially be found in various systems, thereby inspiring a broader range of choices for photovoltaic materials.
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Affiliation(s)
- Xiaoyi Xie
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Pengliang Leng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Zhenyu Ding
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Jinshan Yang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China
| | - Jingyi Yan
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China
| | - Junchen Zhou
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Zihan Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Linfeng Ai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Xiangyu Cao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Zehao Jia
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Yuda Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Minhao Zhao
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, China
- Department of Physics, University of Science and Technology of China, Hefei, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Yang Gao
- Department of Physics, University of Science and Technology of China, Hefei, 230026, China.
| | - Shaoming Dong
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Science, Shanghai, 200050, China
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.
- Shanghai Qi Zhi Institute, 41st Floor, AI Tower, No. 701 Yunjin Road, Xuhui District, Shanghai, 200232, China.
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China.
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 201210, China.
- Shanghai Research Center for Quantum Sciences, Shanghai, 201315, China.
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13
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Li M, Sun H, Liu C, Zhou J, Zhang G, Zhang L, Zhao Y. Abnormal Thickness-Dependent Thermal Transport in Suspended 2D PdSe 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311125. [PMID: 38342583 DOI: 10.1002/smll.202311125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 01/26/2024] [Indexed: 02/13/2024]
Abstract
Research on 2D materials originally focused on the highly symmetrical materials like graphene, h-BN. Recently, 2D materials with low-symmetry lattice such as PdSe2 have drawn extensive attention, due to the interesting layer-dependent bandgap, promising mechanical properties and excellent thermoelectric performance, etc. In this work, the phonon thermal transport is studied in PdSe2 with a pentagonal fold structure. The thermal conductivity of PdSe2 flakes with different thicknesses ranging from few nanometers to several tens of nanometers is measured through the thermal bridge method, where the thermal conductivity increases from 5.04 W mk-1 for 60 nm PdSe2 to 34.51 W mk-1 for the few-layer one. The atomistic modelings uncover that with the thickness thinning down, the lattice of PdSe2 becomes contracted and the phonon group velocity is enhanced, leading to the abnormal increase in the thermal conductivity. And the upshift of the optical phonon modes contributes to the increase of the thermal conductivity as well by creating less acoustic phonon scattering as the thickness reduces. This study probes the interesting abnormal thickness-dependent thermal transport in 2D materials, which promotes the potential thermal management at nanoscale.
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Affiliation(s)
- Meilin Li
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Huanhuan Sun
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Chenhan Liu
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, Ministry of Education Key Laboratory of NSLSCS, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Jun Zhou
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Gang Zhang
- Institute of High Performance Computing, Agency for Science, Technology and Research, Singapore, 138632, Singapore
| | - Lifa Zhang
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Yunshan Zhao
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
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14
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Yang J, Song J, Zhao X, Zong L, Wang S, Li B, Li Y, Ban G, Wang Z, Ma Z, Hu P, Teng F. Visible-Light Self-Powered Photodetector with High Sensitivity Based on the Type-II Heterostructure of CdPSe 3/MoS 2. ACS APPLIED MATERIALS & INTERFACES 2024; 16:32334-32343. [PMID: 38861694 DOI: 10.1021/acsami.4c01183] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2024]
Abstract
Transition metal thiophosphates (MTPs) are a group of emerging van der Waals materials with widely tunable band gaps. In the MTP family, CdPSe3 is demonstrated to possess a wide energy band gap and high carrier mobility, making it a potential candidate in optoelectronic applications. Here, we reported photoelectric response behaviors of both CdPSe3- and CdPSe3/MoS2-based photodetectors (noted as CPS and CM, respectively); these showed prominent photoelectric performances, and the latter proved to be significantly superior to the former. These devices exhibited ultralow dark current at a magnitude order of 10-12 A and fine cycle and air stabilities. Compared with CPS, CM demonstrated the highest responsivity (91.12 mA/W) and detectivity (1.74 × 1011 Jones) at 5 V under 425 nm light illumination. Besides, CM showed self-powered photoelectric responses at zero bias, which was attributed to the improved separation efficiency of photogenerated carriers by the built-in electric field at the interface of the p-n junction. This work proves a prospect for the CM device in portable, self-powered optoelectronic device applications.
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Affiliation(s)
- Juanjuan Yang
- School of Physics, Northwest University, Xi'an 710127, China
| | - Jiaming Song
- School of Physics, Northwest University, Xi'an 710127, China
- Carbon Neutrality College (Yulin), Northwest University, Xi'an 710127, China
- Shaanxi Key Laboratory for Carbon Neutral Technology, Xi'an 710127, China
| | - Xin Zhao
- School of Optoelectronic Engineering, Xi'an Technological University, Xi'an 710021, China
| | - Linghao Zong
- School of Physics, Northwest University, Xi'an 710127, China
| | - Shuxian Wang
- School of Physics, Northwest University, Xi'an 710127, China
| | - Bingda Li
- School of Physics, Northwest University, Xi'an 710127, China
| | - Yuting Li
- School of Physics, Northwest University, Xi'an 710127, China
| | - Guoshuai Ban
- School of Physics, Northwest University, Xi'an 710127, China
| | - Zhuo Wang
- School of Physics, Northwest University, Xi'an 710127, China
| | - Zijuan Ma
- School of Physics, Northwest University, Xi'an 710127, China
| | - Peng Hu
- School of Physics, Northwest University, Xi'an 710127, China
| | - Feng Teng
- School of Physics, Northwest University, Xi'an 710127, China
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15
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Zeng Z, Tian Z, Wang Y, Ge C, Strauß F, Braun K, Michel P, Huang L, Liu G, Li D, Scheele M, Chen M, Pan A, Wang X. Dual polarization-enabled ultrafast bulk photovoltaic response in van der Waals heterostructures. Nat Commun 2024; 15:5355. [PMID: 38918419 PMCID: PMC11199638 DOI: 10.1038/s41467-024-49760-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/29/2023] [Accepted: 06/19/2024] [Indexed: 06/27/2024] Open
Abstract
The bulk photovoltaic effect (BPVE) originating from spontaneous charge polarizations can reach high conversion efficiency exceeding the Shockley-Queisser limit. Emerging van der Waals (vdW) heterostructures provide the ideal platform for BPVE due to interfacial interactions naturally breaking the crystal symmetries of the individual constituents and thus inducing charge polarizations. Here, we show an approach to obtain ultrafast BPVE by taking advantage of dual interfacial polarizations in vdW heterostructures. While the in-plane polarization gives rise to the BPVE in the overlayer, the charge carrier transfer assisted by the out-of-plane polarization further accelerates the interlayer electronic transport and enhances the BPVE. We illustrate the concept in MoS2/black phosphorus heterostructures, where the experimentally observed intrinsic BPVE response time achieves 26 ps, orders of magnitude faster than that of conventional non-centrosymmetric materials. Moreover, the heterostructure device possesses an extrinsic response time of approximately 2.2 ns and a bulk photovoltaic coefficient of 0.6 V-1, which is among the highest values for vdW BPV devices reported so far. Our study thus points to an effective way of designing ultrafast BPVE for high-speed photodetection.
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Grants
- the National Key Research and Development Program of Ministry of Science and Technology (Nos. 2022YFA1204300), the National Natural Science Foundation of China (Nos. 52022029, 52302175, 52221001, U23A20570, 92263107, 62090035, 12174098), the Hunan Provincial Natural Science Foundation of China (Nos. 2023JJ40138, 2022JJ30142),
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Affiliation(s)
- Zhouxiaosong Zeng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Zhiqiang Tian
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China
| | - Yufan Wang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Cuihuan Ge
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Fabian Strauß
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Kai Braun
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Patrick Michel
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Lanyu Huang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Guixian Liu
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Marcus Scheele
- Institute of Physical and Theoretical Chemistry and LISA, University of Tübingen, Auf der Morgenstelle 18, 72076, Tübingen, Germany
| | - Mingxing Chen
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China.
- State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
- Key Laboratory for Matter Microstructure and Function of Hunan Province, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Synergetic Innovation Center for Quantum Effects and Applications (SICQEA), School of Physics and Electronics, Hunan Normal University, Changsha, 410081, China.
| | - Xiao Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
- School of Physics and Electronics, Hunan University, Changsha, 410082, China.
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16
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Lee J, Woo G, Cho J, Son S, Shin H, Seok H, Kim MJ, Kim E, Wang Z, Kang B, Jang WJ, Kim T. Free-standing two-dimensional ferro-ionic memristor. Nat Commun 2024; 15:5162. [PMID: 38890313 PMCID: PMC11189491 DOI: 10.1038/s41467-024-48810-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/09/2024] [Accepted: 05/15/2024] [Indexed: 06/20/2024] Open
Abstract
Two-dimensional (2D) ferroelectric materials have emerged as significant platforms for multi-functional three-dimensional (3D) integrated electronic devices. Among 2D ferroelectric materials, ferro-ionic CuInP2S6 has the potential to achieve the versatile advances in neuromorphic computing systems due to its phase tunability and ferro-ionic characteristics. As CuInP2S6 exhibits a ferroelectric phase with insulating properties at room temperature, the external temperature and electrical field should be required to activate the ferro-ionic conduction. Nevertheless, such external conditions inevitably facilitate stochastic ionic conduction, which completely limits the practical applications of 2D ferro-ionic materials. Herein, free-standing 2D ferroelectric heterostructure is mechanically manipulated for nano-confined conductive filaments growth in free-standing 2D ferro-ionic memristor. The ultra-high mechanical bending is selectively facilitated at the free-standing area to spatially activate the ferro-ionic conduction, which allows the deterministic local positioning of Cu+ ion transport. According to the local flexoelectric engineering, 5.76×102-fold increased maximum current is observed within vertical shear strain 720 nN, which is theoretically supported by the 3D flexoelectric simulation. In conclusion, we envision that our universal free-standing platform can provide the extendable geometric solution for ultra-efficient self-powered system and reliable neuromorphic device.
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Affiliation(s)
- Jinhyoung Lee
- School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
- Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, Republic of Korea.
| | - Gunhoo Woo
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
| | - Jinill Cho
- School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Sihoon Son
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Hyelim Shin
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Hyunho Seok
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Min-Jae Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Eungchul Kim
- AVP Process Development Team, Samsung Electronics, Chungcheongnam-do, Cheonan-si, 31086, Republic of Korea
| | - Ziyang Wang
- School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Boseok Kang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea
| | - Won-Jun Jang
- Center for Quantum Nanoscience, Institute for Basic Science (IBS), Seoul, 03760, Republic of Korea
- Department of Physics, Ewha Womans University, Seoul, 03760, Republic of Korea
| | - Taesung Kim
- School of Mechanical Engineering, Sungkyunkwan University (SKKU), Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
- Department of Nano Science and Technology, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
- Department of Semiconductor Convergence Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
- Department of Nano Engineering, Sungkyunkwan University, Suwon-si, Gyeonggi-do, 16419, Republic of Korea.
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17
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Nahid SM, Nam S, van der Zande AM. Depolarization Field-Induced Photovoltaic Effect in Graphene/α-In 2Se 3/Graphene Heterostructures. ACS NANO 2024; 18:14198-14206. [PMID: 38771928 DOI: 10.1021/acsnano.3c11558] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2024]
Abstract
The ferroelectric photovoltaic effect (FPVE) enables alternate pathways for energy conversion that are not allowed in centrosymmetric materials. Understanding the dominant mechanism of the FPVE at the ultrathin limit is important for defining the ultimate efficiency. In contrast to the wide band gap conventional thin-film ferroelectrics, 2D α-In2Se3 has an ideal band gap of 1.3 eV and enables the fabrication of ultrathin and stable heterostructures, providing the perfect platform to explore FPVE in the nanoscale limit. Here, we study the ferroelectric layer thickness-dependent FPVE in vertical few-layer graphene/α-In2Se3/graphene heterostructures. We find that the short-circuit photocurrent is antiparallel to the ferroelectric polarization and increases exponentially with decreasing thickness. We show that the observed behavior is predicted by the depolarization field model, originating from the unscreened bound charges due to the finite density of states in semimetal few-layer graphene. As a result, the heterostructures show enhancement of the power conversion efficiency, reaching 2.56 × 10-3% under 100 W/cm2 in 18 nm thick α-In2Se3, approximately 275 times more than the 50 nm thick α-In2Se3. These results demonstrate the importance of the depolarization field at the nanoscale and define design principles for the potential of harnessing FPVE at reduced dimension.
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Affiliation(s)
- Shahriar Muhammad Nahid
- Department of Mechanical Science and Engineering, University of Illinois Urbana─Champaign, Urbana, Illinois 61801, United States
| | - SungWoo Nam
- Department of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, California 92697, United States
- Department of Materials Science and Engineering, University of California, Irvine, Irvine, California 92697, United States
| | - Arend M van der Zande
- Department of Mechanical Science and Engineering, University of Illinois Urbana─Champaign, Urbana, Illinois 61801, United States
- Materials Research Laboratory, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Department of Materials Science and Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
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18
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Yu J, Huang B, Yang S, Zhang Y, Bai Y, Song C, Ming W, Liu W, Wang J, Li C, Wang Q, Li J. Flexoelectric Engineering of Bulk Photovoltaic Photodetector. NANO LETTERS 2024; 24:6337-6343. [PMID: 38742772 DOI: 10.1021/acs.nanolett.4c01173] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
The bulk photovoltaic effect (BPVE) offers an interesting approach to generate a steady photocurrent in a single-phase material under homogeneous illumination, and it has been extensively investigated in ferroelectrics exhibiting spontaneous polarization that breaks inversion symmetry. Flexoelectricity breaks inversion symmetry via a strain gradient in the otherwise nonpolar materials, enabling manipulation of ferroelectric order without an electric field. Combining these two effects, we demonstrate active mechanical control of BPVE in suspended 2-dimensional CuInP2S6 (CIPS) that is ferroelectric yet sensitive to electric field, which enables practical photodetection with an order of magnitude enhancement in performance. The suspended CIPS exhibits a 20-fold increase in photocurrent, which can be continuously modulated by either mechanical force or light polarization. The flexoelectrically engineered photodetection device, activated by air pressure and without any optimization, possesses a responsivity of 2.45 × 10-2 A/W and a detectivity of 1.73 × 1011 jones, which are superior to those of ferroelectric-based photodetection and comparable to those of the commercial Si photodiode.
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Affiliation(s)
- Junxi Yu
- Institute for Advanced Study, Chengdu University, Chengdu 610100, People's Republic of China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Boyuan Huang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Songjie Yang
- Institute for Advanced Study, Chengdu University, Chengdu 610100, People's Republic of China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Yuan Zhang
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Yinxin Bai
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Chunlin Song
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Wenjie Ming
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Wenyuan Liu
- Institute of Flexible Electronics Technology of THU, Jiaxing, Zhejiang 314000, People's Republic of China
| | - Junling Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Changjian Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
| | - Qingyuan Wang
- Institute for Advanced Study, Chengdu University, Chengdu 610100, People's Republic of China
- Failure Mechanics and Engineering Disaster Prevention and Mitigation Key Laboratory of Sichuan Province, Sichuan University, Chengdu 610065, People's Republic of China
| | - Jiangyu Li
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, Guangdong 518055, People's Republic of China
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19
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Sun RX, Hu Z, Zhao X, Zha MJ, Zhang J, Chen XD, Liu Z, Tian J. Strain-Prompted Giant Flexo-Photovoltaic Effect in Two-Dimensional Violet Phosphorene Nanosheets. ACS NANO 2024; 18:13298-13307. [PMID: 38727530 DOI: 10.1021/acsnano.4c02821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
As a second-order nonlinear optical phenomenon, the bulk photovoltaic (BPV) effect is expected to break through the Shockley-Queisser limit of thermodynamic photoelectron conversion and improve the energy conversion efficiency of photovoltaic cells. Here, we have successfully induced a strong flexo-photovoltaic (FPV) effect, a form of BPV effect, in strained violet phosphorene nanosheets (VPNS) by utilizing strain engineering at the h-BN nanoedge, which was first observed in nontransition metal dichalcogenide (TMD) systems. This BPV effect was found to originate from the disruption of inversion symmetry induced by uniaxial strain applied to VPNS at the h-BN nanoedge. We have revealed the intricate relationship between the bulk photovoltaic effect and strain gradients in VPNS through thickness-dependent photovoltaic response experiments. A bulk photovoltaic coefficient of up to 1.3 × 10-3 V-1 and a polarization extinction ratio of 21.6 have been achieved by systematically optimizing the height of the h-BN nanoedge and the thickness of VPNS, surpassing those of reported TMD materials (typically less than 3). Our results have revealed the fundamental relationship between the FPV effect and the strain gradients in low-dimensional materials and inspired further exploration of optoelectronic phenomena in strain-gradient engineered materials.
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Affiliation(s)
- Ruo-Xuan Sun
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Zhen Hu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Xuewen Zhao
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Ming-Jie Zha
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Jinying Zhang
- State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
| | - Xu-Dong Chen
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
| | - Zhibo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
- The Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Jianguo Tian
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China
- Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China
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20
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Li S, Wang F, Wang Y, Yang J, Wang X, Zhan X, He J, Wang Z. Van der Waals Ferroelectrics: Theories, Materials, and Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2301472. [PMID: 37363893 DOI: 10.1002/adma.202301472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Revised: 06/19/2023] [Indexed: 06/28/2023]
Abstract
In recent years, an increasing number of 2D van der Waals (vdW) materials are theory-predicted or laboratory-validated to possess in-plane (IP) and/or out-of-plane (OOP) spontaneous ferroelectric polarization. Due to their dangling-bond-free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon-based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed. First, theories of ferroelectricity are briefly discussed. Then, a comprehensive summary of the non-stacking vdW ferroelectric materials is provided based on their crystal structures and the emerging sliding ferroelectrics. In addition, their potential applications in various branches/frontier fields are enumerated, with a focus on artificial intelligence. Finally, the challenges and development prospects of vdW ferroelectrics are discussed.
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Affiliation(s)
- Shuhui Li
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Feng Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yanrong Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jia Yang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xinyuan Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xueying Zhan
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jun He
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Zhenxing Wang
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
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21
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Li D, Qin JK, Zhu B, Yue LQ, Huang PY, Zhu C, Zhou F, Zhen L, Xu CY. Intercorrelated Ferroelectricity and Bulk Photovoltaic Effect in Two-Dimensional Sn 2P 2S 6 Semiconductor for Polarization-Sensitive Photodetection. ACS NANO 2024; 18:9636-9644. [PMID: 38497667 DOI: 10.1021/acsnano.4c00382] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/19/2024]
Abstract
A two-dimensional (2D) ferroelectric semiconductor, which is coupled with photosensitivity and room-temperature ferroelectricity, provides the possibility of coordinated conductance modulation by both electric field and light illumination and is promising for triggering the revolution of optoelectronics for monolithic multifunctional integration. Here, we report that semiconducting Sn2P2S6 crystals can be achieved in a 2D morphology using a chemical vapor transport approach with the assistant of space confinement and experimentally demonstrate the robust ferroelectricity in atomic-thin Sn2P2S6 nanosheet at room temperature. The intercorrelated programming of ferroelectric order along out-of-plane (OOP) and in-plane (IP) directions enables a tunable bulk photovoltaic (BPV) effect through multidirectional electrical control. By combining the capability of anisotropic in-plane optical absorption, a highly integrated Sn2P2S6 optoelectronic device vertically sandwiched with graphene electrodes yields the polarization-dependent open-circuit photovoltage with a dichroic ratio of 2.0 under 405 nm light illumination. The reintroduction of ferroelectric Sn2P2S6 to the 2D asymmetric semiconductor family provides possibilities to hardware implement of the self-powered polarization-sensitive photodetection and spotlights the promising applications for next-generation photovoltaic devices.
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Affiliation(s)
- Dong Li
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Jing-Kai Qin
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- School of Integrated Circuits, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Bingxuan Zhu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Ling-Qing Yue
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Pei-Yu Huang
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Chengyi Zhu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Feichi Zhou
- School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Liang Zhen
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin 150080, China
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22
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Fang N, Wu C, Zhang Y, Li Z, Zhou Z. Perspectives: Light Control of Magnetism and Device Development. ACS NANO 2024; 18:8600-8625. [PMID: 38469753 DOI: 10.1021/acsnano.3c13002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/13/2024]
Abstract
Accurately controlling magnetic and spin states presents a significant challenge in spintronics, especially as demands for higher data storage density and increased processing speeds grow. Approaches such as light control are gradually supplanting traditional magnetic field methods. Traditionally, the modulation of magnetism was predominantly achieved through polarized light with the help of ultrafast light technologies. With the growing demand for energy efficiency and multifunctionality in spintronic devices, integrating photovoltaic materials into magnetoelectric systems has introduced more physical effects. This development suggests that sunlight will play an increasingly pivotal role in manipulating spin orientation in the future. This review introduces and concludes the influence of various light types on magnetism, exploring mechanisms such as magneto-optical (MO) effects, light-induced magnetic phase transitions, and spin photovoltaic effects. This review briefly summarizes recent advancements in the light control of magnetism, especially sunlight, and their potential applications, providing an optimistic perspective on future research directions in this area.
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Affiliation(s)
- Ning Fang
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
| | - Changqing Wu
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Yuzhe Zhang
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Zhongyu Li
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Ziyao Zhou
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
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23
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Wu X, Qi L, Iqbal MA, Dai S, Weng X, Wu K, Kang C, Li Z, Zhao D, Tang W, Zhuge F, Zhai T, Ruan S, Zeng YJ. Revealing Strong Flexoelectricity and Optoelectronic Coupling in 2D Ferroelectric CuInP 2S 6 Via Large Strain Gradient. ACS APPLIED MATERIALS & INTERFACES 2024; 16:14038-14046. [PMID: 38445951 DOI: 10.1021/acsami.3c18678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
The interplay between flexoelectric and optoelectronic characteristics provides a paradigm for studying emerging phenomena in various 2D materials. However, an effective way to induce a large and tunable strain gradient in 2D devices remains to be exploited. Herein, we propose a strategy to induce large flexoelectric effect in 2D ferroelectric CuInP2S6 by constructing a 1D-2D mixed-dimensional heterostructure. The strong flexoelectric effect is induced by enormous strain gradient up to 4.2 × 106 m-1 resulting from the underlying ZnO nanowires, which is further confirmed by the asymmetric coercive field and the red-shift in the absorption edge. The induced flexoelectric polarization efficiently boosts the self-powered photodetection performance. In addition, the improved photoresponse has a good correlation with the induced strain gradient, showing a consistent size-dependent flexoelectric effect. The mechanism of flexoelectric and optoelectronic coupling is proposed based on the Landau-Ginzburg-Devonshire double-well model, supported by density functional theory (DFT) calculations. This work provides a brand-new method to induce a strong flexoelectric effect in 2D materials, which is not restricted to crystal symmetry and thus offers unprecedented opportunities for state-of-the-art 2D devices.
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Affiliation(s)
- Xiaokeng Wu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Lu Qi
- Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes, Shenzhen Technology University, Shenzhen 518118, P. R. China
| | - Muhammad Ahsan Iqbal
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Sichao Dai
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Xiaoliang Weng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kewen Wu
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Chenxu Kang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Zelong Li
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Duo Zhao
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Wei Tang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Fuwei Zhuge
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518057, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Shenzhen 518057, P. R. China
| | - Shuangchen Ruan
- Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes, Shenzhen Technology University, Shenzhen 518118, P. R. China
| | - Yu-Jia Zeng
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China
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24
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Han S, Ye L, Li Y, Huang B. Theoretical Understanding of Nonlinear Optical Properties in Solids: A Perspective. J Phys Chem Lett 2024:3323-3335. [PMID: 38498006 DOI: 10.1021/acs.jpclett.4c00360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/19/2024]
Abstract
Nonlinear optical (NLO) crystals have become a hot topic in chemical science and material physics, due to their essential role in laser technology, optical information, optoelectronics, and precision measurements. In this Perspective, we provide an overview of recent advances in second-order nonlinear optics, with a focus on two critical topics: second harmonic generation (SHG) and the bulk photovoltaic effect (BPVE). For SHG, we discuss recent progress in deep-ultraviolet (DUV) materials, highlighting their structural characteristics and nonlinear groups that contribute to their exceptional performance. For BPVE, we concentrate on the emerging field of low-dimensional materials, emphasizing their potential in a shift current. Additionally, we discuss the development of regulation approaches for NLO materials, which is vital for their practical application. Finally, we address the outlook for the field, including the challenges that must be overcome to further advance NLO materials research.
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Affiliation(s)
- Shengru Han
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Liangting Ye
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Yang Li
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing 100193, China
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25
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Xiang L, Jin H, Wang J. Quantifying the photocurrent fluctuation in quantum materials by shot noise. Nat Commun 2024; 15:2012. [PMID: 38443381 PMCID: PMC10914713 DOI: 10.1038/s41467-024-46264-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 02/21/2024] [Indexed: 03/07/2024] Open
Abstract
The DC photocurrent can detect the topology and geometry of quantum materials without inversion symmetry. Herein, we propose that the DC shot noise (DSN), as the fluctuation of photocurrent operator, can also be a diagnostic of quantum materials. Particularly, we develop the quantum theory for DSNs in gapped systems and identify the shift and injection DSNs by dividing the second-order photocurrent operator into off-diagonal and diagonal contributions, respectively. Remarkably, we find that the DSNs can not be forbidden by inversion symmetry, while the constraint from time-reversal symmetry depends on the polarization of light. Furthermore, we show that the DSNs also encode the geometrical information of Bloch electrons, such as the Berry curvature and the quantum metric. Finally, guided by symmetry, we apply our theory to evaluate the DSNs in monolayer GeS and bilayer MoS2 with and without inversion symmetry and find that the DSNs can be larger in centrosymmetric phase.
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Affiliation(s)
- Longjun Xiang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Hao Jin
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China
| | - Jian Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, China.
- Department of Physics, University of Hong Kong, Hong Kong, China.
- Department of Physics, The University of Science and Technology of China, Hefei, China.
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26
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Zhou Y, Cheng R, Wang H, Zhai B, Yin L, Wen Y, Lv Y, He J. van der Waals Epitaxial Growth of One-Unit-Cell-Thick Ferroelectric CuCrS 2 Nanosheets. NANO LETTERS 2024; 24:2118-2124. [PMID: 38305203 DOI: 10.1021/acs.nanolett.3c05018] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/03/2024]
Abstract
Ferroelectric two-dimensional (2D) materials with a high transition temperature are highly desirable for new physics and next-generation memory electronics. However, the long-range polar order of ferroelectrics will barely persist when the thickness reaches the nanoscale. In this work, we synthesized 2D CuCrS2 nanosheets with thicknesses down to one unit cell via van der Waals epitaxy in a chemical vapor deposition system. A combination of transmission electron microscopy, second-harmonic generation, and Raman spectroscopy measurements confirms the R3m space group and noncentrosymmetric structure. Switchable ferroelectric domains and obvious ferroelectric hysteresis loops were created and visualized by piezoresponse force microscopy. Theoretical calculation helps us understand the mechanism of ferroelectric switching in CuCrS2 nanosheets. Finally, we fabricated a ferroelectric memory device that achieves an on/off ratio of ∼102 and remains stable after 2000 s, indicating its applicability in novel nanoelectronics. Overall, 2D CuCrS2 nanosheets exhibit excellent ferroelectric properties at the nanoscale, showing great promise for next-generation devices.
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Affiliation(s)
- Yanchang Zhou
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yawei Lv
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
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27
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Wang J, Han N, Lin Z, Hu S, Tian R, Zhang M, Zhang Y, Zhao J, Gan X. A giant intrinsic photovoltaic effect in atomically thin ReS 2. NANOSCALE 2024; 16:3101-3106. [PMID: 38250820 DOI: 10.1039/d3nr05355e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
The photovoltaic (PV) effect in non-centrosymmetric materials consisting of a single component under homogeneous illumination can exceed the fundamental Shockley-Queisser limit compared to the traditional p-n junctions. Two-dimensional (2D) materials with a reduced dimensionality and smaller bandgap were predicated to be better candidates for the PV effect with high efficiency exceeding that of traditional ferroelectric perovskite oxides. Here, we report the giant intrinsic PV effect in atomically thin rhenium disulfide (ReS2) with centrosymmetry breaking. In graphene/ReS2/graphene sandwich structures, significant short-circuit currents (Isc) were observed with illumination over the visible spectral range, presenting the highest responsivity (110 mA W-1) and external quantum efficiency (25.7%) among those reported PV effects in 2D materials. This giant PV effect could be ascribed to the spontaneous-polarization induced depolarization field in even-number-layered ReS2 flakes benefiting from the distorted 1T lattice structure. Our results provide a new potential candidate material for the development of novel high-efficiency, miniaturized and easily integrated photodetectors and solar cells.
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Affiliation(s)
- Jing Wang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Nannan Han
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China.
| | - Zhihua Lin
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China.
| | - Siqi Hu
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Ruijuan Tian
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Mingwen Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Yu Zhang
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Jianlin Zhao
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
| | - Xuetao Gan
- Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129, China.
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28
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Zhou Y, Zhou X, Yu XL, Liang Z, Zhao X, Wang T, Miao J, Chen X. Giant intrinsic photovoltaic effect in one-dimensional van der Waals grain boundaries. Nat Commun 2024; 15:501. [PMID: 38218730 PMCID: PMC10787835 DOI: 10.1038/s41467-024-44792-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Accepted: 01/04/2024] [Indexed: 01/15/2024] Open
Abstract
The photovoltaic effect lies at the heart of eco-friendly energy harvesting. However, the conversion efficiency of traditional photovoltaic effect utilizing the built-in electric effect in p-n junctions is restricted by the Shockley-Queisser limit. Alternatively, intrinsic/bulk photovoltaic effect (IPVE/BPVE), a second-order nonlinear optoelectronic effect arising from the broken inversion symmetry of crystalline structure, can overcome this theoretical limit. Here, we uncover giant and robust IPVE in one-dimensional (1D) van der Waals (vdW) grain boundaries (GBs) in a layered semiconductor, ReS2. The IPVE-induced photocurrent densities in vdW GBs are among the highest reported values compared with all kinds of material platforms. Furthermore, the IPVE-induced photocurrent is gate-tunable with a polarization-independent component along the GBs, which is preferred for energy harvesting. The observed IPVE in vdW GBs demonstrates a promising mechanism for emerging optoelectronics applications.
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Affiliation(s)
- Yongheng Zhou
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Xin Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Xiang-Long Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China.
- International Quantum Academy, Shenzhen, 518048, China.
| | - Zihan Liang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing, 100871, China
| | - Taihong Wang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China
| | - Jinshui Miao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
| | - Xiaolong Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, 1088 Xueyuan Avenue, Shenzhen, 518055, China.
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29
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Qiu D, Hou P. Ferroelectricity-Driven Self-Powered Weak Temperature and Broadband Light Detection in MoS 2/CuInP 2S 6/WSe 2 van der Waals Heterojunction Nanoarchitectonics. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59671-59680. [PMID: 38102080 DOI: 10.1021/acsami.3c12695] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/17/2023]
Abstract
Two-dimensional ferroelectric materials enrich the modulation degrees of freedom in self-powered van der Waals temperature/light detectors by incorporating pyroelectric and bulk photovoltaic effects. However, in addition to the low polarization, the practical applications of these materials are limited due to the significant challenge posed by their ultrathin nature, which affects their polarization stability. In this report, we introduce a design for a dual heterostructure-stabilized van der Waals heterojunction that addresses this challenge by improving the performance and extending the operational lifetime of self-powered van der Waals temperature/light detectors. The design is demonstrated using the MoS2/CuInP2S6 (CIPS)/WSe2 van der Waals heterojunction, which exhibits sensitivity to small temperature changes induced by weak light across the ultraviolet to mid-infrared spectrum. It can generate a noticeable pyroelectric current without the need for an external voltage, and its pyroelectric coefficient exceeds 130 and 978 μC/m2 K for 45 and 70 nm CIPS, respectively. The heterojunction offers high detection accuracy, with a temperature variation sensitivity as small as 0.1 K and an optical power intensity detection range from low to 1 μW/cm2. Additionally, the heterojunction exhibits exceptional detectivity (D*) for different light wavelengths. Remarkably, the self-powered detection performance remains stable for months without obvious degradation in the natural environment. These results offer a promising solution for high-performance, self-sustaining temperature/light detection applications and pave the way for the development of future ferroelectricity-driven photodetection technologies.
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Affiliation(s)
- Dan Qiu
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
| | - Pengfei Hou
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
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30
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Ma Y, Yan Y, Luo L, Pazos S, Zhang C, Lv X, Chen M, Liu C, Wang Y, Chen A, Li Y, Zheng D, Lin R, Algaidi H, Sun M, Liu JZ, Tu S, Alshareef HN, Gong C, Lanza M, Xue F, Zhang X. High-performance van der Waals antiferroelectric CuCrP 2S 6-based memristors. Nat Commun 2023; 14:7891. [PMID: 38036500 PMCID: PMC10689492 DOI: 10.1038/s41467-023-43628-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/08/2023] [Accepted: 11/15/2023] [Indexed: 12/02/2023] Open
Abstract
Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the electric field-driven phase transition in the rarely studied antiferroelectric CuCrP2S6 crystals, we develop a nonvolatile memristor showing a sizable resistive-switching ratio of ~ 1000, high switching endurance up to 20,000 cycles, low cycle-to-cycle variation, and robust thermal stability up to 120 °C. The resistive switching is attributed to the ferroelectric polarization-modulated thermal emission accompanied by the Fowler-Nordheim tunneling across the interfaces. First-principles calculations reveal that the good device performances are associated with the exceptionally strong ferroelectric polarization in CuCrP2S6 crystal. Furthermore, the typical biological synaptic learning rules, such as long-term potentiation/depression and spike amplitude/spike time-dependent plasticity, are also demonstrated. The results highlight the great application potential of van der Waals antiferroelectrics in high-performance synaptic devices for neuromorphic computing.
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Affiliation(s)
- Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yuan Yan
- Department of Mechanical Engineering, The University of Melbourne, Parkville, Vic, 3010, Australia
| | - Linqu Luo
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Sebastian Pazos
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xiang Lv
- College of Materials Science and Engineering, Sichuan University, Chengdu, 610065, China
| | - Maolin Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Chen Liu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yizhou Wang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Aitian Chen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yan Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Dongxing Zheng
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Rongyu Lin
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Hanin Algaidi
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Minglei Sun
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Jefferson Zhe Liu
- Department of Mechanical Engineering, The University of Melbourne, Parkville, Vic, 3010, Australia
| | - Shaobo Tu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Cheng Gong
- Department of Electrical and Computer Engineering and Quantum Technology Center, University of Maryland, College Park, MD, 20742, USA
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Fei Xue
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311215, China.
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia.
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31
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Cheon CY, Sun Z, Cao J, Gonzalez Marin JF, Tripathi M, Watanabe K, Taniguchi T, Luisier M, Kis A. Disorder-induced bulk photovoltaic effect in a centrosymmetric van der Waals material. NPJ 2D MATERIALS AND APPLICATIONS 2023; 7:74. [PMID: 38665484 PMCID: PMC11041738 DOI: 10.1038/s41699-023-00435-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/06/2023] [Accepted: 10/17/2023] [Indexed: 04/28/2024]
Abstract
Sunlight is widely seen as one of the most abundant forms of renewable energy, with photovoltaic cells based on pn junctions being the most commonly used platform attempting to harness it. Unlike in conventional photovoltaic cells, the bulk photovoltaic effect (BPVE) allows for the generation of photocurrent and photovoltage in a single material without the need to engineer a pn junction and create a built-in electric field, thus offering a solution that can potentially exceed the Shockley-Queisser efficiency limit. However, it requires a material with no inversion symmetry and is therefore absent in centrosymmetric materials. Here, we demonstrate that breaking the inversion symmetry by structural disorder can induce BPVE in ultrathin PtSe2, a centrosymmetric semiconducting van der Waals material. Homogenous illumination of defective PtSe2 by linearly and circularly polarized light results in a photoresponse termed as linear photogalvanic effect (LPGE) and circular photogalvanic effect (CPGE), which is mostly absent in the pristine crystal. First-principles calculations reveal that LPGE originates from Se vacancies that act as asymmetric scattering centers for the photo-generated electron-hole pairs. Our work emphasizes the importance of defects to induce photovoltaic functionality in centrosymmetric materials and shows how the range of materials suitable for light sensing and energy-harvesting applications can be extended.
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Affiliation(s)
- Cheol-Yeon Cheon
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Zhe Sun
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Jiang Cao
- Integrated Systems Laboratory, ETH Zürich, 8092 Zurich, Switzerland
| | - Juan Francisco Gonzalez Marin
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Mukesh Tripathi
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044 Japan
| | - Mathieu Luisier
- Integrated Systems Laboratory, ETH Zürich, 8092 Zurich, Switzerland
| | - Andras Kis
- Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
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32
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Zhu Y, Long R, Fang WH. Substrate Ferroelectric Proximity Effects Have a Strong Influence on Charge Carrier Lifetime in Black Phosphorus. NANO LETTERS 2023; 23:10074-10080. [PMID: 37903224 DOI: 10.1021/acs.nanolett.3c03570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/01/2023]
Abstract
By stacking monolayer black phosphorus (MBP) with nonpolarized and ferroelectric polarized bilayer hexagonal boron nitride (h-BN), we demonstrate that ferroelectric proximity effects have a strong influence on the charge carrier lifetime of MBP using nonadiabatic (NA) molecular dynamics simulations. Through enhancing the motion of phosphorus atoms, ferroelectric polarization enhances the overlap of electron-hole wave functions that improves NA coupling and decreases the bandgap, resulting in a rapid electron-hole recombination completing within a quarter of nanoseconds, which is two times shorter than that in nonpolarized stackings. In addition to the dominant in-plane Ag2 mode in free-standing MBP, the out-of-plane high-frequency Ag1 and low-frequency interlayer breathing modes presented in the heterojunctions drive the recombination. Notably, the resonance between the breathing mode within bilayer h-BN and the B1u mode of MBP provides an additional nonradiative channel in ferroelectric stackings, further accelerating charge recombination. These findings are crucial for charge dynamics manipulation in two-dimensional materials via substrate ferroelectric proximity effects.
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Affiliation(s)
- Yonghao Zhu
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, P. R. China
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, P. R. China
| | - Wei-Hai Fang
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, P. R. China
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33
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Xu H, Sun F, Guo W, Han S, Liu Y, Fan Q, Tang L, Liu W, Luo J, Sun Z. Building Block-Inspired Hybrid Perovskite Derivatives for Ferroelectric Channel Layers with Gate-Tunable Memory Behavior. Angew Chem Int Ed Engl 2023; 62:e202309416. [PMID: 37733923 DOI: 10.1002/anie.202309416] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/03/2023] [Revised: 09/20/2023] [Accepted: 09/21/2023] [Indexed: 09/23/2023]
Abstract
Ferroelectric photovoltaics driven by spontaneous polarization (Ps ) holds a promise for creating the next-generation optoelectronics, spintronics and non-volatile memories. However, photoactive ferroelectrics are quite scarce in single homogeneous phase, owing to the severe Ps fatigue caused by leakage current of photoexcited carriers. Here, through combining inorganic and organic components as building blocks, we constructed a series of ferroelectric semiconductors of 2D hybrid perovskites, (HA)2 (MA)n-1 Pbn Br3n+1 (n=1-5; HA=hexylamine and MA=methylamine). It is intriguing that their Curie temperatures are greatly enhanced by reducing the thickness of inorganic frameworks from MAPbBr3 (n=∞, Tc =239 K) to n=2 (Tc =310 K, ΔT=71 K). Especially, on account of the coupling of room-temperature ferroelectricity (Ps ≈1.5 μC/cm2 ) and photoconductivity, n=3 crystal wafer was integrated as channel field effect transistor that shows excellent a large short-circuit photocurrent ≈19.74 μA/cm2 . Such giant photocurrents can be modulated through manipulating gate voltage in a wide range (±60 V), exhibiting gate-tunable memory behaviors of three current states ("-1/0/1" states). We believe that this work sheds light on further exploration of ferroelectric materials toward new non-volatile memory devices.
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Affiliation(s)
- Haojie Xu
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Fapeng Sun
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Wuqian Guo
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Shiguo Han
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Yi Liu
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Qingshun Fan
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Liwei Tang
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Wei Liu
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Junhua Luo
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Zhihua Sun
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
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34
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Niu Y, Li L, Qi Z, Aung HH, Han X, Tenne R, Yao Y, Zak A, Guo Y. 0D van der Waals interfacial ferroelectricity. Nat Commun 2023; 14:5578. [PMID: 37907466 PMCID: PMC10618478 DOI: 10.1038/s41467-023-41045-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/26/2023] [Accepted: 08/21/2023] [Indexed: 11/02/2023] Open
Abstract
The dimensional limit of ferroelectricity has been long explored. The critical contravention is that the downscaling of ferroelectricity leads to a loss of polarization. This work demonstrates a zero-dimensional ferroelectricity by the atomic sliding at the restrained van der Waals interface of crossed tungsten disufilde nanotubes. The developed zero-dimensional ferroelectric diode in this work presents not only non-volatile resistive memory, but also the programmable photovoltaic effect at the visible band. Benefiting from the intrinsic dimensional limitation, the zero-dimensional ferroelectric diode allows electrical operation at an ultra-low current. By breaking through the critical size of depolarization, this work demonstrates the ultimately downscaled interfacial ferroelectricity of zero-dimensional, and contributes to a branch of devices that integrates zero-dimensional ferroelectric memory, nano electro-mechanical system, and programmable photovoltaics in one.
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Affiliation(s)
- Yue Niu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Lei Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Zhiying Qi
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Hein Htet Aung
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Xinyi Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Reshef Tenne
- Department of Molecular Chemistry and Materials Science, Weizmann Institute of Science, 7610001, Rehovot, Israel
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China
| | - Alla Zak
- Faculty of Sciences, Holon Institute of Technology, 52 Golomb Street, 5810201, Holon, Israel
| | - Yao Guo
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, 100081, Beijing, China.
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35
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Noma T, Chen HY, Dhara B, Sotome M, Nomoto T, Arita R, Nakamura M, Miyajima D. Bulk Photovoltaic Effect Along the Nonpolar Axis in Organic-Inorganic Hybrid Perovskites. Angew Chem Int Ed Engl 2023; 62:e202309055. [PMID: 37635091 DOI: 10.1002/anie.202309055] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2023] [Revised: 08/23/2023] [Accepted: 08/25/2023] [Indexed: 08/29/2023]
Abstract
The origin of the bulk photovoltaic effect (BPVE) was considered as a built-in electric field formed by the macroscopic polarization of materials. Alternatively, the "shift current mechanism" has been gradually accepted as the more appropriate description of the BPVE. This mechanism implies that the photocurrent generated by the BPVE is a topological current featuring an ultrafast response and dissipation-less nature, which is very attractive for photodetector applications. Meanwhile, the origin of the BPVE in organic-inorganic hybrid perovskites (OIHPs) has not been discussed and is still widely accepted as the classical mechanism without any experimental evidence. Herein, we observed the BPVE along the nonpolar axis in OIHPs, which is inconsistent with the classical explanation. Furthermore, based on the nonlinear optical tensor correlation, we substantiated that the BPVE in OIHPs is originated in the shift current mechanism.
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Affiliation(s)
- Taishi Noma
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Hsiao-Yi Chen
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Barun Dhara
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Masato Sotome
- Department of Materials Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8904, Japan
| | - Takuya Nomoto
- Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8904, Japan
| | - Ryotaro Arita
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8904, Japan
| | - Masao Nakamura
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Daigo Miyajima
- Center for Emergent Matter Science (CEMS), RIKEN, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
- The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8581, Japan
- PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
- School of Science and Engineering, The Chinese University of Hong Kong, 2001 Longxiang Boulevard, Longgang District, Shenzhen, Guangdong, 518172, China
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36
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Man P, Huang L, Zhao J, Ly TH. Ferroic Phases in Two-Dimensional Materials. Chem Rev 2023; 123:10990-11046. [PMID: 37672768 DOI: 10.1021/acs.chemrev.3c00170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/08/2023]
Abstract
Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.
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Affiliation(s)
- Ping Man
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Lingli Huang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, P. R. China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
- Department of Chemistry and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, P. R. China
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37
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Li X, Zhang F, Yue Z, Wang Q, Sun Z, Luo J, Liu X. Centimeter-Size Single Crystals of Halide Perovskite Photoferroelectric Solid Solution with Ultrahigh Pyroelectricity Boosted Photodetection. Angew Chem Int Ed Engl 2023; 62:e202305310. [PMID: 37486543 DOI: 10.1002/anie.202305310] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2023] [Revised: 07/23/2023] [Accepted: 07/24/2023] [Indexed: 07/25/2023]
Abstract
Photoferroelectrics, especially emerging halide perovskite ferroelectrics, have motivated tremendous interests owing to their fascinating bulk photovoltaic effect (BPVE) and cross-coupled functionalities. However, solid solutions of halide perovskite photoferroelectrics with controllable structure and enhanced performance are scarcely explored. Herein, through mixing cage cation, a homogeneous halide perovskite photoferroelectric PA2 FAx MA1-x Pb2 Br7 solid solution (PA, FA and MA are CH3 CH2 CH2 NH3 + , NH2 CHNH2 + and CH3 NH3 + , 0≤x≤1) has been developed, which demonstrates tunable Curie temperature in a wide range of 263-323 K and excellent optoelectrical features. As the component adjusted to x=0.7, the bulk crystal demonstrates ultrahigh pyroelectric coefficient up to 1.48 μC cm-2 K-1 around room temperature. Strikingly, benefiting from the light-induced pyroelectricity and remarkable BPVE, a self-powered and sensitive photodetector based solid solution crystals with boosted responsivity and detectivity over than 1300 % has been achieved. This pioneering work sheds light on the exploration of photoferroelectric solid solutions towards high-performance photoelectronic devices.
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Affiliation(s)
- Xiaoqi Li
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Science, Beijing, 100049, P. R. China
| | - Fen Zhang
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Zengshan Yue
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Qianxi Wang
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Zhihua Sun
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Science, Beijing, 100049, P. R. China
| | - Junhua Luo
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Science, Beijing, 100049, P. R. China
| | - Xitao Liu
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Science, Beijing, 100049, P. R. China
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38
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Wang K, Li D, Wang J, Hao Y, Anderson H, Yang L, Hong X. Interface-Tuning of Ferroelectricity and Quadruple-Well State in CuInP 2S 6 via Ferroelectric Oxide. ACS NANO 2023; 17:15787-15795. [PMID: 37552805 DOI: 10.1021/acsnano.3c03567] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2023]
Abstract
Ferroelectric van der Waals CuInP2S6 possesses intriguing quadruple-well states and negative piezoelectricity. Its technological implementation has been impeded by the relatively low Curie temperature (bulk TC ∼ 42 °C) and the lack of precise domain control. Here we show that CuInP2S6 can be immune to the finite size effect and exhibits enhanced ferroelectricity, piezoelectricity, and polar alignment in the ultrathin limit when it is interfaced with ferroelectric oxide PbZr0.2Ti0.8O3 films. Piezoresponse force microscopy studies reveal that the polar domains in thin CuInP2S6 fully conform to those of the underlying PbZr0.2Ti0.8O3, where the piezoelectric coefficient changes sign and increases sharply with reducing thickness. High temperature in situ domain imaging points to a significantly enhanced TC of >200 °C for 13 nm CuInP2S6 on PbZr0.2Ti0.8O3. Density functional theory modeling and Monte Carlo simulations show that the enhanced polar alignment and TC can be attributed to interface-mediated structure distortion in CuInP2S6. Our study provides an effective material strategy to engineer the polar properties of CuInP2S6 for flexible nanoelectronic, optoelectronic, and mechanical applications.
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Affiliation(s)
- Kun Wang
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, United States
| | - Du Li
- Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130-4899, United States
| | - Jia Wang
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, United States
| | - Yifei Hao
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, United States
| | - Hailey Anderson
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, United States
| | - Li Yang
- Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130-4899, United States
| | - Xia Hong
- Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, United States
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39
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Jiang X, Kang L, Wang J, Huang B. Giant Bulk Electrophotovoltaic Effect in Heteronodal-Line Systems. PHYSICAL REVIEW LETTERS 2023; 130:256902. [PMID: 37418709 DOI: 10.1103/physrevlett.130.256902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Revised: 04/27/2023] [Accepted: 05/30/2023] [Indexed: 07/09/2023]
Abstract
The realization of a giant and continuously tunable second-order photocurrent is desired for many nonlinear optical (NLO) and optoelectronic applications, which remains a great challenge. Here, based on a two-band model, we propose a concept of the bulk electrophotovoltaic effect, that is, an out-of-plane external electric field (E_{ext}) that can continuously tune in-plane shift current along with its sign flip in a heteronodal-line (HNL) system. While strong linear optical transition around the nodal loop may potentially generate giant shift current, an E_{ext} can effectively control the radius of the nodal loop, which can continuously modulate the shift-vector components inside and outside the nodal loop holding opposite signs. This concept has been demonstrated in the HNL HSnN/MoS_{2} system using first-principles calculations. The HSnN/MoS_{2} heterobilayer can not only produce a shift-current conductivity with magnitude that is one to two orders larger than other reported systems, but it can also realize a giant bulk electrophotovoltaic effect. Our finding opens new routes to create and manipulate NLO responses in 2D materials.
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Affiliation(s)
- Xiao Jiang
- Beijing Computational Science Research Center, Beijing 100193, China
| | - Lei Kang
- Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
| | - Jianfeng Wang
- School of Physics, Beihang University, Beijing 100191, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing 100193, China
- Beijing Normal University, Beijing 100875, China
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40
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Zhong Z, Wu S, Li X, Wang Z, Yang Q, Huang B, Chen Y, Wang X, Lin T, Shen H, Meng X, Wang M, Shi W, Wang J, Chu J, Huang H. Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP 2S 6 Heterostructure. ACS NANO 2023. [PMID: 37186552 DOI: 10.1021/acsnano.3c02406] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
The two-dimensional layered material CuInP2S6 (CIPS) has attracted significant research attention due to its nontrivial physical properties, including room-temperature ferroelectricity at the ultrathin limit and substantial ionic conductivity. Despite many efforts to control its ionic conductance and develop electronic devices, such as memristors, improving the stability of these devices remains a challenge. This work presents a highly stable threshold-switching device based on the Cu/CIPS/graphene heterostructure, achieved after a comprehensive investigation of the activation of Cu's ionic conductivity. The device exhibits exceptional threshold-switching performance, including good cycling endurance, a high on/off ratio of up to 104, low operation voltages, and an ultrasmall subthreshold swing of less than 1.8 mV/decade for the resistance-switching process. Through temperature-dependent electrical and Raman spectroscopy measurements, the stable resistive-switching mechanism is interpreted with a drifting and diffusion model of Cu ions under the electric field, rather than the conventional conducting filament mechanism. These results make the layered ferroionic CIPS material a promising candidate for information storage devices, demonstrating a compelling approach to achieving high-performance threshold-switching memristor devices.
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Affiliation(s)
- Zhipeng Zhong
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Shuaiqin Wu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Xiang Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Zhiqiang Wang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Qianyi Yang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Bangchi Huang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Yan Chen
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Ming Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Integrated Chip and Systems, Fudan University, Shanghai 200433, People's Republic of China
| | - Wu Shi
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
| | - Jianlu Wang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Integrated Chip and Systems, Fudan University, Shanghai 200433, People's Republic of China
| | - Junhao Chu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Hai Huang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
- State Key Laboratory of Integrated Chip and Systems, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
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41
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Wang C, You L, Cobden D, Wang J. Towards two-dimensional van der Waals ferroelectrics. NATURE MATERIALS 2023; 22:542-552. [PMID: 36690757 DOI: 10.1038/s41563-022-01422-y] [Citation(s) in RCA: 48] [Impact Index Per Article: 48.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2022] [Accepted: 10/27/2022] [Indexed: 05/05/2023]
Abstract
The discovery of ferroelectricity in two-dimensional (2D) van der Waals (vdW) materials has brought important functionalities to the 2D materials family, and may trigger a revolution in next-generation nanoelectronics and spintronics. In this Perspective, we briefly review recent progress in the field of 2D vdW ferroelectrics, focusing on the mechanisms that drive spontaneous polarization in 2D systems, unique properties brought about by the reduced lattice dimensionality and promising applications of 2D vdW ferroelectrics. We finish with an outlook for challenges that need to be addressed and our view on possible future research directions.
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Affiliation(s)
- Chuanshou Wang
- Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China
| | - Lu You
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou, China.
| | - David Cobden
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Junling Wang
- Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, China.
- Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen, China.
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42
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Zhang S, Fei T, Cheng T, Yang JY, Liu L. Temperature-dependent UV-Vis dielectric functions of BaTiO 3 across ferroelectric-paraelectric phase transition. OPTICS EXPRESS 2023; 31:12357-12366. [PMID: 37157397 DOI: 10.1364/oe.486729] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Ferroelectric BaTiO3 with an electric-field-switchable spontaneous polarization has attracted wide attention in photovoltaic applications due to its efficient charge separation for photoexcitation. The evolution of its optical properties with rising temperature especially across the ferroelectric-paraelectric phase transition is critical to peer into the fundamental photoexcitation process. Herein, by combining spectroscopic ellipsometry measurements with first-principles calculations, we obtain the UV-Vis dielectric functions of perovskite BaTiO3 at temperatures varying from 300 to 873 K and provide the atomistic insights into the temperature-driven ferroelectric-paraelectric (tetragonal-cubic) structural evolution. The main adsorption peak in dielectric function of BaTiO3 is reduced by 20.6% in magnitude and redshifted as temperature increases. The Urbach tail shows an unconventional temperature-dependent behavior due to the microcrystalline disorder across the ferroelectric-paraelectric phase transition and the decreased surface roughness at around 405 K. From ab initio molecular dynamics simulations, the redshifted dielectric function of ferroelectric BaTiO3 coincidences with the reduction of the spontaneous polarization at elevated temperature. Moreover, a positive (negative) external electric field is applied which can modulate the dielectric function of ferroelectric BaTiO3 blueshift (redshift) with a larger (smaller) spontaneous polarization since it drives the ferroelectric further away from (closer to) the paraelectric structure. This work sheds light on the temperature-dependent optical properties of BaTiO3 and provides data support for advancing its ferroelectric photovoltaic applications.
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43
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Hua L, Tang L, Liu Y, Han S, Xu H, Guo W, Ma Y, Liu X, Luo J, Sun Z. Acquiring Bulk Anomalous Photovoltaic Effect in Single Crystals of a Lead-Free Double Perovskite with Aromatic and Alkali Mixed-Cations. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2207393. [PMID: 36651018 DOI: 10.1002/smll.202207393] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2022] [Revised: 12/19/2022] [Indexed: 06/17/2023]
Abstract
The bulk anomalous photovoltaic (BAPV) effect of acentric materials refers to a distinct concept from traditional semiconductor-based devices, of which the above-bandgap photovoltage hints at a promise for solar-energy conversion. However, it is still a challenge to exploit new BAPV-active systems due to the lacking of knowledge on the structural origin of this concept. BAPV effects in single crystals of a 2D lead-free double perovskite, (BBA)2 CsAgBiBr7 (1, BBA = 4-bromobenzylammonium), tailored by mixing aromatic and alkali cations in the confined architecture to form electric polarization are acquired here. Strikingly, BAPV effects manifested by above-bandgap photovoltage (VOC ) show unique attributes of directional anisotropy and positive dependence on electrode spacing. The driving source stems from orientations of the polar aromatic spacer and Cs+ ion drift, being different from the known built-in asymmetry photovoltaic heterojunctions. As the first demonstration of the BAPV effect in the double perovskites, the results will enrich the family of environmentally green BAPV-active candidates and further facilitate their new optoelectronic application.
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Affiliation(s)
- Lina Hua
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Liwei Tang
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Yi Liu
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Shiguo Han
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
| | - Haojie Xu
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Wuqian Guo
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yu Ma
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xitao Liu
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Junhua Luo
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
| | - Zhihua Sun
- State Key Laboratory of Structure Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, P. R. China
- University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, P. R. China
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44
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Zhong A, Zhou Y, Jin H, Yu H, Wang Y, Luo J, Huang L, Sun Z, Zhang D, Fan P. Superior Performances of Self-Driven Near-Infrared Photodetectors Based on the SnTe:Si/Si Heterostructure Boosted by Bulk Photovoltaic Effect. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206262. [PMID: 36642832 DOI: 10.1002/smll.202206262] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2022] [Revised: 12/13/2022] [Indexed: 06/17/2023]
Abstract
The upsurge of new materials that can be used for near-infrared (NIR) photodetectors operated without cooling is crucial. As a novel material with a small bandgap of ≈0.28 eV, the topological crystalline insulator SnTe has attracted considerable attention. Herein, this work demonstrates self-driven NIR photodetectors based on SnTe/Si and SnTe:Si/Si heterostructures. The SnTe/Si heterostructure has a high detectivity D* of 3.3 × 1012 Jones. By Si doping, the SnTe:Si/Si heterostructure reduces the dark current density and increases the photocurrent by ≈1 order of magnitude simultaneously, which improves the detectivity D* by ≈2 orders of magnitude up to 1.59 × 1014 Jones. Further theoretical analysis indicates that the improved device performance may be ascribed to the bulk photovoltaic effect (BPVE), in which doped Si atoms break the inversion symmetry and thus enable the generation of additional photocurrents beyond the heterostructure. In addition, the external quantum efficiency (EQE) measured at room temperature at 850 nm increases by a factor of 7.5 times, from 38.5% to 289%. A high responsivity of 1979 mA W-1 without bias and fast rising time of 8 µs are also observed. The significantly improved photodetection achieved by the Si doping is of great interest and may provide a novel strategy for superior photodetectors.
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Affiliation(s)
- Aihua Zhong
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
| | - Yue Zhou
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
| | - Hao Jin
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
| | - Huimin Yu
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
| | - Yunkai Wang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
| | - Jingting Luo
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
| | - Longbiao Huang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
| | - Zhenhua Sun
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
| | - Dongping Zhang
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
| | - Ping Fan
- Shenzhen Key Laboratory of Advanced Thin Films and Applications, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P.R. China
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45
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Soliman M, Maity K, Gloppe A, Mahmoudi A, Ouerghi A, Doudin B, Kundys B, Dayen JF. Photoferroelectric All-van-der-Waals Heterostructure for Multimode Neuromorphic Ferroelectric Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15732-15744. [PMID: 36919904 PMCID: PMC10375436 DOI: 10.1021/acsami.3c00092] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Interface-driven effects in ferroelectric van der Waals (vdW) heterostructures provide fresh opportunities in the search for alternative device architectures toward overcoming the von Neumann bottleneck. However, their implementation is still in its infancy, mostly by electrical control. It is of utmost interest to develop strategies for additional optical and multistate control in the quest for novel neuromorphic architectures. Here, we demonstrate the electrical and optical control of the ferroelectric polarization states of ferroelectric field effect transistors (FeFET). The FeFETs, fully made of ReS2/hBN/CuInP2S6 vdW materials, achieve an on/off ratio exceeding 107, a hysteresis memory window up to 7 V wide, and multiple remanent states with a lifetime exceeding 103 s. Moreover, the ferroelectric polarization of the CuInP2S6 (CIPS) layer can be controlled by photoexciting the vdW heterostructure. We perform wavelength-dependent studies, which allow for identifying two mechanisms at play in the optical control of the polarization: band-to-band photocarrier generation into the 2D semiconductor ReS2 and photovoltaic voltage into the 2D ferroelectric CIPS. Finally, heterosynaptic plasticity is demonstrated by operating our FeFET in three different synaptic modes: electrically stimulated, optically stimulated, and optically assisted synapse. Key synaptic functionalities are emulated including electrical long-term plasticity, optoelectrical plasticity, optical potentiation, and spike rate-dependent plasticity. The simulated artificial neural networks demonstrate an excellent accuracy level of 91% close to ideal-model synapses. These results provide a fresh background for future research on photoferroelectric vdW systems and put ferroelectric vdW heterostructures on the roadmap for the next neuromorphic computing architectures.
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Affiliation(s)
- Mohamed Soliman
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Krishna Maity
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Arnaud Gloppe
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Aymen Mahmoudi
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France
| | - Abdelkarim Ouerghi
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France
| | - Bernard Doudin
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
- Institut Universitaire de France (IUF), 1 rue Descartes, 75231 cedex 05 Paris, France
| | - Bohdan Kundys
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
| | - Jean-Francois Dayen
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France
- Institut Universitaire de France (IUF), 1 rue Descartes, 75231 cedex 05 Paris, France
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You L, Abdelsamie A, Zhou Y, Chang L, Lim ZS, Wang J. Revisiting the Ferroelectric Photovoltaic Properties of Vertical BiFeO 3 Capacitors: A Comprehensive Study. ACS APPLIED MATERIALS & INTERFACES 2023; 15:12070-12077. [PMID: 36825749 DOI: 10.1021/acsami.2c23023] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The ferroelectric photovoltaic effect has been extensively studied for possible applications in energy conversion and photo-electrics. The reversible spontaneous polarization gives rise to a switchable photovoltaic behavior. However, despite its long history, the origin of the ferroelectric photovoltaic effect still lacks a full understanding since multiple mechanisms such as bulk and Schottky-barrier-related interface effects are involved. Herein, we report a comprehensive study on the photovoltaic response of BiFeO3-based vertical heterostructures, using multiple strategies to clarify its origin. We found that, under white light illumination, polarization-modulated Schottky barrier at the interface is the dominating mechanism. By varying the top metal contacts, only the photovoltaic effect of the polarization downward state is strongly modulated, suggesting selective interface contribution in different polarization states. A Schottky-barrier-free device shows negligible photovoltaic effect, suggesting the lack of bulk photovoltaic effect in vertical heterostructures under white light illumination.
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Affiliation(s)
- Lu You
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, 1 Shizi Street, Suzhou 215006, China
| | - Amr Abdelsamie
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Yang Zhou
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, Guangdong 510632, People's Republic of China
| | - Lei Chang
- School of Materials Science and Engineering, Nanyang Technological University, 639798 Singapore
| | - Zhi Shiuh Lim
- Physics Department, National University of Singapore, Block S12, #2 Science Drive 3, 117551 Singapore
| | - Junling Wang
- Department of Physics, Guangdong Provincial Key Laboratory of Functional Oxide Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
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47
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Liu L, Liu W, Cheng B, Cui B, Hu J. Switchable Giant Bulk Photocurrents and Photo-spin-currents in Monolayer PT-Symmetric Antiferromagnet MnPSe 3. J Phys Chem Lett 2023; 14:370-378. [PMID: 36607806 DOI: 10.1021/acs.jpclett.2c03383] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Converting light into steady currents and spin-currents in two-dimensional (2D) platform is essential for future energy harvesting and spintronics. We show that the giant and modulable bulk photovoltaic effects (BPVEs) can be achieved in air-stable 2D antiferromagnet (AFM) monolayer MnPSe3, with nonlinear photoconductance >4000 nm·μA/V2 and photo-spin-conductance >2000 (nm·μA/V2ℏ/2e) in the visible spectrum. The propagation and the spin-polarizations of photocurrents can be switched via simply rotating the Néel vector. We unveil that the PT-symmetry, mirror symmetries, and spin-orbital-couplings are the keys for the observed sizable and controllable 2D BPVEs. All the results provide insights into the BPVEs of 2D AFM and suggest that the layered MnPSe3 is an outstanding 2D platform for energy device and photo-spintronics.
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Affiliation(s)
- Liang Liu
- School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan250100, China
| | - Weikang Liu
- School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan250100, China
| | - Bin Cheng
- School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan250100, China
| | - Bin Cui
- School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan250100, China
| | - Jifan Hu
- School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan250100, China
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48
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Zhu H, Li J, Chen Q, Tang W, Fan X, Li F, Li L. Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP 2S 6 via In-Plane Ionic Migration. ACS NANO 2023; 17:1239-1246. [PMID: 36633906 DOI: 10.1021/acsnano.2c09280] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As basic building blocks for next-generation information technologies devices, high-quality p-n junctions based on van der Waals (vdW) materials have attracted widespread interest. Compared to traditional two-dimensional (2D) heterojunction diodes, the emerging homojunctions are more attractive owing to their intrinsic advantages, such as continuous band alignments and smaller carrier trapping. Here, utilizing the long-range migration of Cu+ ions under an in-plane electric field, a lateral p-n homojunction was constructed in the 2D layered copper indium thiophosphate (CIPS). The symmetric Au/CIPS/Au devices demonstrate an electric-field-driven resistance switching (RS) accompanied by a rectification behavior without any gate control. Moreover, such rectification behavior can be continuously modulated by poling voltage. We deduce that the reversable rectifying RS behavior is governed by the effective lateral build-in potential and the change of the interfacial barrier during the poling process. Furthermore, the CIPS p-n homojuction is evidenced by the photovoltaic effect, with the spectral response extending up to the visible region due to the better photogenerated carrier separation efficiency. Therefore, this work provides a facile route to fabricate homojunctions through electric-field-driven ionic migration.
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Affiliation(s)
- Huanfeng Zhu
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute Zhejiang University, Jiaxing314000, China
| | - Jialin Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Qiang Chen
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Wei Tang
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Xinyi Fan
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Fan Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Linjun Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute Zhejiang University, Jiaxing314000, China
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49
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Dong Y, Yang MM, Yoshii M, Matsuoka S, Kitamura S, Hasegawa T, Ogawa N, Morimoto T, Ideue T, Iwasa Y. Giant bulk piezophotovoltaic effect in 3R-MoS 2. NATURE NANOTECHNOLOGY 2023; 18:36-41. [PMID: 36411374 DOI: 10.1038/s41565-022-01252-8] [Citation(s) in RCA: 17] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Accepted: 10/03/2022] [Indexed: 06/16/2023]
Abstract
Given its innate coupling with wavefunction geometry in solids and its potential to boost the solar energy conversion efficiency, the bulk photovoltaic effect (BPVE) has been of considerable interest in the past decade1-14. Initially discovered and developed in ferroelectric oxide materials2, the BPVE has now been explored in a wide range of emerging materials, such as Weyl semimetals9,10, van der Waals nanomaterials11,12,14, oxide superlattices15, halide perovskites16, organics17, bulk Rashba semiconductors18 and others. However, a feasible experimental approach to optimize the photovoltaic performance is lacking. Here we show that strain-induced polarization can significantly enhance the BPVE in non-centrosymmetric rhombohedral-type MoS2 multilayer flakes (that is, 3R-MoS2). This polarization-enhanced BPVE, termed the piezophotovoltaic effect, exhibits distinctive crystallographic orientation dependence, in that the enhancement mainly manifests in the armchair direction of the 3R-MoS2 lattice while remaining largely intact in the zigzag direction. Moreover, the photocurrent increases by over two orders of magnitude when an in-plane tensile strain of ~0.2% is applied, rivalling that of state-of-the-art materials. This work unravels the potential of strain engineering in boosting the photovoltaic performance, which could potentially promote the exploration of novel photoelectric processes in strained two-dimensional layered materials and their van der Waals heterostructures.
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Affiliation(s)
- Yu Dong
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Ming-Min Yang
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
- Department of Physics, The University of Warwick, Coventry, UK
| | - Mao Yoshii
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Satoshi Matsuoka
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
- Graduate School of Engineering, Nagasaki University, Nagasaki, Japan
| | - Sota Kitamura
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Tatsuo Hasegawa
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Naoki Ogawa
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan
| | - Takahiro Morimoto
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
| | - Toshiya Ideue
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Japan
| | - Yoshihiro Iwasa
- Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo, Japan.
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Japan.
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50
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Lyu HY, Zhang Z, You JY, Yan QB, Su G. Two-Dimensional Intercalating Multiferroics with Strong Magnetoelectric Coupling. J Phys Chem Lett 2022; 13:11405-11412. [PMID: 36459057 DOI: 10.1021/acs.jpclett.2c03169] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Intrinsic two-dimensional (2D) multiferroics that couple ferromagnetism and ferroelectricity are rare. Here, we present an approach to achieve 2D multiferroics using powerful intercalation technology. In this approach, metal atoms such as Cu or Ag atoms are intercalated in bilayer CrI3 to form Cu(CrI3)4 or Ag(CrI3)4. The intercalant leads to the inversion symmetry breaking and produces a large out-of-plane electric polarization with a low transition barrier and a small reversal electric field, exhibiting excellent 2D ferroelectric properties. In addition, due to charge transfer between the intercalated atoms and bilayer CrI3, the interlayer coupling transits from antiferromagnetic to ferromagnetic, and the intralayer ferromagnetic coupling is also enhanced. Furthermore, the built-in electric polarization causes a distinct surface magnetization difference, generating a strong magnetoelectric coupling with a coefficient larger than that of Fe, Co, and Ni thin films. Our work paves a practical path for 2D multiferroics, which may have crucial applications in spintronics.
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Affiliation(s)
- Hou-Yi Lyu
- Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing100049, China
| | - Zhen Zhang
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Division of Advanced Materials, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
| | - Jing-Yang You
- Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore117551
| | - Qing-Bo Yan
- Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing100049, China
| | - Gang Su
- Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing100049, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing100049, China
- Kavli Institute for Theoretical Sciences, and CAS Center of Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing100190, China
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