Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

Understanding the Potential of Light Absorption in Dots-in-Host Semiconductors

The outstanding physical properties of dots-in-host (QD@Host) hetero semiconductors demand detailed methods to fundamentally understand the best routes to optimize their potentialities for different applications. In this work, a 4-band k.p-based method was developed for rock-salt quantum dots (QDs) that describes the complete optical properties of arbitrary QD@Host systems, trailblazing the way for the full optoelectronic analysis of quantum-structured solar cells. Starting with the determination of the QD bandgap and validation against well-established literature results, the electron transition rate is then computed and analyzed against the main system parameters. This is followed by a multiparameter optimization, considering intermediate band solar cells as a promising application, where the best QD configuration was determined, together with the corresponding QD@Host absorption spectrum, in view of attaining the theoretical maximum efficiency (∼50%) of this photovoltaic technology. The results show the creation of pronounced sub-bandgap absorption due to the electronic transitions from/to the quantum-confined states, which enables a much broader exploitation of the sunlight spectrum.

Robust Quantum Gates against Correlated Noise in Integrated Quantum Chips

As quantum circuits become more integrated and complex, additional error sources that were previously insignificant start to emerge. Consequently, the fidelity of quantum gates benchmarked under pristine conditions falls short of predicting their performance in realistic circuits. To overcome this problem, we must improve their robustness against pertinent error models besides isolated fidelity. Here, we report the experimental realization of robust quantum gates in superconducting quantum circuits based on a geometric framework for diagnosing and correcting various gate errors. Using quantum process tomography and randomized benchmarking, we demonstrate robust single-qubit gates against quasistatic noise and spatially correlated noise in a broad range of strengths, which are common sources of coherent errors in large-scale quantum circuits. We also apply our method to nonstatic noises and to realize robust two-qubit gates. Our Letter provides a versatile toolbox for achieving noise-resilient complex quantum circuits.

A continuous-wave and pulsed X-band electron spin resonance spectrometer operating in ultra-high vacuum for the study of low dimensional spin ensembles

We report the development of a continuous-wave and pulsed X-band electron spin resonance (ESR) spectrometer for the study of spins on ordered surfaces down to cryogenic temperatures. The spectrometer operates in ultra-high vacuum and utilizes a half-wavelength microstrip line resonator realized using epitaxially grown copper films on single crystal Al2O3 substrates. The one-dimensional microstrip line resonator exhibits a quality factor of more than 200 at room temperature, close to the upper limit determined by radiation losses. The surface characterizations of the copper strip of the resonator by atomic force microscopy, low-energy electron diffraction, and scanning tunneling microscopy show that the surface is atomically clean, flat, and single crystalline. Measuring the ESR spectrum at 15 K from a few nm thick molecular film of YPc2, we find a continuous-wave ESR sensitivity of 2.6 × 1011 spins/G · Hz1/2, indicating that a signal-to-noise ratio of 3.9 G · Hz1/2 is expected from a monolayer of YPc2 molecules. Advanced pulsed ESR experimental capabilities, including dynamical decoupling and electron-nuclear double resonance, are demonstrated using free radicals diluted in a glassy matrix.

Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe

Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttling in conveyor-mode in a 420 nm long quantum bus has been demonstrated previously. Here we investigate the spin coherence during conveyor-mode shuttling by separation and rejoining an Einstein-Podolsky-Rosen (EPR) spin-pair. Compared to previous work we boost the shuttle velocity by a factor of 10000. We observe a rising spin-qubit dephasing time with the longer shuttle distances due to motional narrowing and estimate the spin-shuttle infidelity due to dephasing to be 0.7% for a total shuttle distance of nominal 560 nm. Shuttling several loops up to an accumulated distance of 3.36 μm, spin-entanglement of the EPR pair is still detectable, giving good perspective for our approach of a shuttle-based scalable quantum computing architecture in silicon.

Accelerated Adiabatic Passage of a Single Electron Spin Qubit in Quantum Dots

Adiabatic processes can keep the quantum system in its instantaneous eigenstate, which is robust to noises and dissipation. However, it is limited by sufficiently slow evolution. Here, we experimentally demonstrate the transitionless quantum driving (TLQD) of the shortcuts to adiabaticity in gate-defined semiconductor quantum dots (QDs) to greatly accelerate the conventional adiabatic passage for the first time. For a given efficiency of quantum state transfer, the acceleration can be more than twofold. The dynamic properties also prove that the TLQD can guarantee fast and high-fidelity quantum state transfer. In order to compensate for the diabatic errors caused by dephasing noises, the modified TLQD is proposed and demonstrated in experiment by enlarging the width of the counterdiabatic drivings. The benchmarking shows that the state transfer fidelity of 97.8% can be achieved. This work will greatly promote researches and applications about quantum simulations and adiabatic quantum computation based on the gate-defined QDs.

Dangling Bonds as Possible Contributors to Charge Noise in Silicon and Silicon-Germanium Quantum Dot Qubits

Spin qubits based on Si and Si1-xGex quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities. Identifying the origins of these charge fluctuations is therefore a critical step toward improving Si quantum-dot-based qubits. Here, we use hybrid functional calculations to investigate possible atomistic sources of charge noise, focusing on charge trapping at Si and Ge dangling bonds (DBs). We evaluate the role of global and local environment in the defect levels associated with DBs in Si, Ge, and Si1-xGex alloys, and consider their trapping and excitation energies within the framework of configuration coordinate diagrams. We additionally consider the influence of strain and oxidation in charge-trapping energetics by analyzing Si and GeSi DBs in SiO2 and strained Si layers in typical Si1-xGex quantum dot heterostructures. Our results identify that Ge dangling bonds are more problematic charge-trapping centers both in typical Si1-xGex alloys and associated oxidation layers, and they may be exacerbated by compositional inhomogeneities. These results suggest the importance of alloy homogeneity and possible passivation schemes for DBs in Si-based quantum dot qubits and are of general relevance to mitigating possible trap levels in other Si, Ge, and Si1-xGex-based metal-oxide-semiconductor stacks and related devices.

Noise Prediction and Reduction of Single Electron Spin by Deep-Learning-Enhanced Feedforward Control

Noise-induced control imperfection is an important problem in applications of diamond-based nanoscale sensing, where measurement-based strategies are generally utilized to correct low-frequency noises in realtime. However, the spin-state readout requires a long time due to the low photon-detection efficiency. This inevitably introduces a delay in the noise-reduction process and limits its performance. Here we introduce the deep learning approach to relax this restriction by predicting the trend of noise and compensating for the delay. We experimentally implement feedforward quantum control of the nitrogen-vacancy center in diamond to protect its spin coherence and improve the sensing performance against noise. The new approach effectively enhances the decoherence time of the electron spin, which enables exploration of more physics from its resonant spectroscopy. A theoretical model is provided to explain the improvement. This scheme could be applied in general sensing schemes and extended to other quantum systems.

Reducing charge noise in quantum dots by using thin silicon quantum wells

Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a ²⁸Si/SiGe heterostructure and show the connection between charge noise, measured locally in quantum dots, and global disorder in the host semiconductor, measured with macroscopic Hall bars. In 5 nm thick ²⁸Si quantum wells, we find that improvements in the scattering properties and uniformity of the two-dimensional electron gas over a 100 mm wafer correspond to a significant reduction in charge noise, with a minimum value of 0.29 ± 0.02 μeV/Hz^½ at 1 Hz averaged over several quantum dots. We extrapolate the measured charge noise to simulated dephasing times to CZ-gate fidelities that improve nearly one order of magnitude. These results point to a clean and quiet crystalline environment for integrating long-lived and high-fidelity spin qubits into a larger system.

Universal logic with encoded spin qubits in silicon

Quantum computation features known examples of hardware acceleration for certain problems, but is challenging to realize because of its susceptibility to small errors from noise or imperfect control. The principles of fault tolerance may enable computational acceleration with imperfect hardware, but they place strict requirements on the character and correlation of errors1. For many qubit technologies2-21, some challenges to achieving fault tolerance can be traced to correlated errors arising from the need to control qubits by injecting microwave energy matching qubit resonances. Here we demonstrate an alternative approach to quantum computation that uses energy-degenerate encoded qubit states controlled by nearest-neighbour contact interactions that partially swap the spin states of electrons with those of their neighbours. Calibrated sequences of such partial swaps, implemented using only voltage pulses, allow universal quantum control while bypassing microwave-associated correlated error sources1,22-28. We use an array of six 28Si/SiGe quantum dots, built using a platform that is capable of extending in two dimensions following processes used in conventional microelectronics29. We quantify the operational fidelity of universal control of two encoded qubits using interleaved randomized benchmarking30, finding a fidelity of 96.3% ± 0.7% for encoded controlled NOT operations and 99.3% ± 0.5% for encoded SWAP. The quantum coherence offered by enriched silicon5-9,16,18,20,22,27,29,31-37, the all-electrical and low-crosstalk-control of partial swap operations1,22-28 and the configurable insensitivity of our encoding to certain error sources28,33,34,38 all combine to offer a strong pathway towards scalable fault tolerance and computational advantage.

Non-adiabatic quantum control of quantum dot arrays with fixed exchange using Cartan decomposition

In semiconductor spin qubits which typically interact through short-range exchange coupling, shuttling of spin is a practical way to generate quantum operations between distant qubits. Although the exchange is often tunable through voltages applied to gate electrodes, its minimal value can be significantly large, which hinders the applicability of existing shuttling protocols to such devices, requiring a different approach. In this work, we extend our previous results for double- and triple-dot systems, and describe a method for implementing spin state transfer in long chains of singly occupied quantum dots in a non-adiabatic manner. We make use of Cartan decomposition to break down the interacting problem into simpler problems in a systematic way, and use dynamical invariants to design smooth non-adiabatic pulses that can be implemented in devices with modest control bandwidth. Finally, we discuss the extensibility of our results to directed shuttling of spin states on two-dimensional lattices of quantum dots with fixed coupling. This article is part of the theme issue 'Shortcuts to adiabaticity: theoretical, experimental and interdisciplinary perspectives'.

Fingerprints of Qubit Noise in Transient Cavity Transmission

Noise affects the coherence of qubits and thereby places a bound on the performance of quantum computers. We theoretically study a generic two-level system with fluctuating control parameters in a photonic cavity and find that basic features of the noise spectral density are imprinted in the transient transmission through the cavity. We obtain analytical expressions for generic noise and proceed to study the cases of quasistatic, white and 1/f^{α} noise in more detail. Additionally, we propose a way of extracting the noise power spectral density in a frequency band only bounded by the range of the qubit-cavity detuning and with an exponentially decaying error due to finite measurement times. Our results suggest that measurements of the time-dependent transmission probability represent a novel way of extracting noise characteristics.

A silicon singlet-triplet qubit driven by spin-valley coupling

Spin–orbit effects, inherent to electrons confined in quantum dots at a silicon heterointerface, provide a means to control electron spin qubits without the added complexity of on-chip, nanofabricated micromagnets or nearby coplanar striplines. Here, we demonstrate a singlet–triplet qubit operating mode that can drive qubit evolution at frequencies in excess of 200 MHz. This approach offers a means to electrically turn on and off fast control, while providing high logic gate orthogonality and long qubit dephasing times. We utilize this operational mode for dynamical decoupling experiments to probe the charge noise power spectrum in a silicon metal-oxide-semiconductor double quantum dot. In addition, we assess qubit frequency drift over longer timescales to capture low-frequency noise. We present the charge noise power spectral density up to 3 MHz, which exhibits a 1/f^α dependence consistent with α ~ 0.7, over 9 orders of magnitude in noise frequency.

Spin-orbit coupling in gate-defined quantum dots in silicon metal-oxide semiconductors provides a promising route for electrical control of spin qubits. Here, the authors demonstrate that intervalley spin–orbit interaction enables fast singlet–triplet qubit rotations in this platform, at frequencies exceeding 200MHz.