1
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Wang L, Ooi ZY, Jia FY, Sun Y, Liu Y, Dai L, Ye J, Zhang J, Un HI, Chiang YH, Han S, Mirabelli AJ, Anaya M, Zhang Z, Lu Y, Zou C, Zhao B, Di D, Yang X, Guo D, Tan Y, Dong H, Liu S, Liu T, Zhou H, Stranks SD, Sun LD, Yan CH, Friend RH. Efficient perovskite LEDs with tailored atomic layer number emission at fixed wavelengths. SCIENCE ADVANCES 2025; 11:eadp9595. [PMID: 39951530 PMCID: PMC11827643 DOI: 10.1126/sciadv.adp9595] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2024] [Accepted: 01/13/2025] [Indexed: 02/16/2025]
Abstract
Colloidal quantum dots (QDs) have illuminated computer monitors and television screens due to their fascinating color-tunable properties depending on the size. Here, the electroluminescence (EL) wavelength of perovskite LEDs was tuned via the atomic layer number (ALN) of nanoplates (NPs) instead of the "size" in conventional QDs. We demonstrated efficient LEDs with controllably tailored emission from n = 3, 4, 5, and ≥7 ALN perovskite NPs with specific and discrete major peaks at 607, 638, 669, and 728 nanometers. These LEDs demonstrated peak external quantum efficiency (EQE) of 26.8% and high wavelength reproducibility with less than 1 to 2 nm difference between batches. High color stability without observable EL spectral change and operating stability with the best T50 of 267 minutes at 1.0 milliampere per square centimeter was also achieved. This work demonstrates a concept of tailoring specific ALN emission with fixed wavelengths, shedding light on efficient, emission-discrete, and color-stable LEDs for next-generation display.
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Affiliation(s)
- Ligang Wang
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
- Department of Applied Physics, Royal Institute of Technology, Albanova University Centre, 106 91 Stockholm, Sweden
| | - Zher Ying Ooi
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge CB3 0AS, UK
| | - Feng-Yan Jia
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Yuqi Sun
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
| | - Yun Liu
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
- Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Republic of Singapore
| | - Linjie Dai
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
| | - Junzhi Ye
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
| | - Jincan Zhang
- Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK
| | - Hio-Ieng Un
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
| | - Yu-Hsien Chiang
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
| | - Sanyang Han
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
| | | | - Miguel Anaya
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge CB3 0AS, UK
| | - Zhilong Zhang
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
| | - Yang Lu
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge CB3 0AS, UK
| | - Chen Zou
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, P. R. China
| | - Baodan Zhao
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, P. R. China
| | - Dawei Di
- State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou, P. R. China
| | - Xiaodong Yang
- Hubei Key Laboratory of Processing and Application of Catalytic Materials, College of Chemical Engineering, Huanggang Normal University, Huanggang, Hubei, P. R. China
| | - Dengyang Guo
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
| | - Yu Tan
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Hao Dong
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Shaocheng Liu
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Tianjun Liu
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
| | - Huanping Zhou
- School of Materials Science and Engineering, Peking University, Beijing 100871, P. R. China
| | - Samuel D. Stranks
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
- Department of Chemical Engineering and Biotechnology, University of Cambridge, Cambridge CB3 0AS, UK
| | - Ling-Dong Sun
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Chun-Hua Yan
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, PKU-HKU Joint Laboratory in Rare Earth Materials and Bioinorganic Chemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Richard H. Friend
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, UK
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2
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Chen G, Wang S, Yu Z, Dong C, Jia P, Pu D, Dong K, Cui H, Fang H, Wang C, Gao R, Yao F, Ke W, Li G, Fang G. Regulation of nucleation and crystallization for blade-coating large-area CsPbBr 3 perovskite light-emitting diodes. Sci Bull (Beijing) 2025; 70:212-222. [PMID: 39477787 DOI: 10.1016/j.scib.2024.10.022] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/03/2024] [Revised: 08/30/2024] [Accepted: 10/12/2024] [Indexed: 01/21/2025]
Abstract
Metal halide perovskite light-emitting diodes (PeLEDs) and large-area perovskite color conversion layers for liquid crystal display exhibit great potential in the field of illumination and display. Blade-coating method stands out as a highly suitable technique for fabricating large-scale films, albeit with challenges such as uneven nucleation coverage and non-uniformity crystallization process. In this work, we developed an in-situ characterization measurement system to monitor the perovskite nucleation, and crystallization process. By incorporating formamidine acetate (FAAc) into perovskite precursor solutions, the nucleation rate and nuclei density of perovskite were increased, leading to more uniform nucleation. In addition, we inserted a layer of [2-(9H-carbazol-9-yl)ethyl] phosphonic acid above the poly(9-vinylcarbazole) hole transport layer. This layer acts as an anchor for the perovskite nano-crystal nuclei formed in the precursor, enhancing the steric hindrance of the solute and subsequently slowing down the crystal growth rate, thereby improving crystal quality. Based on these improvements, large-area perovskite nano-polycrystalline films with significantly improved uniformity and enhanced photoluminescence quantum yield were obtained. A small-area PeLED (2 mm × 2 mm) with a maximum external quantum efficiency of 25.91% was realized, marking the highest record of PeLED prepared by blade-coating method to date. An ultra-large-area PeLED (5 cm × 7 cm) was also prepared, which is the largest PeLED prepared by the solution method reported so far.
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Affiliation(s)
- Guoyi Chen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Shuxin Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Zhiqiu Yu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chaomin Dong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Peng Jia
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Dexin Pu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Kailian Dong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Hongsen Cui
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Hongyi Fang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Chen Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Ruimin Gao
- School of Mathematics and Statistics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Fang Yao
- School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430200, China; Shenzhen Research Institute, Wuhan University, Shenzhen 518055, China.
| | - Weijun Ke
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China.
| | - Gang Li
- Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hong Kong 999077, China.
| | - Guojia Fang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, China; School of Electronic and Electrical Engineering, Wuhan Textile University, Wuhan 430200, China.
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3
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Liu Y, Ma Z, Zhang J, He Y, Dai J, Li X, Shi Z, Manna L. Light-Emitting Diodes Based on Metal Halide Perovskite and Perovskite Related Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025:e2415606. [PMID: 39887795 DOI: 10.1002/adma.202415606] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2024] [Revised: 12/18/2024] [Indexed: 02/01/2025]
Abstract
Light-emitting diodes (LEDs) based on halide perovskite nanocrystals have attracted extensive attention due to their considerable luminescence efficiency, wide color gamut, high color purity, and facile material synthesis. Since the first demonstration of LEDs based on MAPbBr3 nanocrystals was reported in 2014, the community has witnessed a rapid development in their performances. In this review, a historical perspective of the development of LEDs based on halide perovskite nanocrystals is provided and then a comprehensive survey of current strategies for high-efficiency lead-based perovskite nanocrystals LEDs, including synthesis optimization, ion doping/alloying, and shell coating is presented. Then the basic characteristics and emission mechanisms of lead-free perovskite and perovskite-related nanocrystals emitters in environmentally friendly LEDs, from the standpoint of different emission colors are reviewed. Finally, the progress in LED applications is covered and an outlook of the opportunities and challenges for future developments in this field is provided.
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Affiliation(s)
- Ying Liu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jibin Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Yanni He
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Jinfei Dai
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Shaanxi Key Lab of Information Photonic Technique, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Liberato Manna
- Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova, 16163, Italy
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4
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Feng L, Yeh IH, Radovanovic PV. Compositionally Tunable Magneto-optical Properties of Lead-Free Halide Perovskite Nanocrystals. J Phys Chem Lett 2025; 16:168-174. [PMID: 39710964 DOI: 10.1021/acs.jpclett.4c02966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2024]
Abstract
Inorganic lead-free metal halide perovskites have garnered much attention as low-toxicity alternatives to lead halide perovskites for luminescence and photovoltaic applications. However, the electronic structure and properties of these materials, including the composition dependence of the band structure, spin-orbit coupling, and Zeeman effects, remain poorly understood. Here, we investigated vacancy-ordered Cs3Bi2X9 (X= Cl, Br) perovskite nanocrystals using magnetic circular dichroism spectroscopy. Our results indicate that the excitonic spectra are predominantly composed of direct and indirect band gap transitions and that the Zeeman splitting energy of the direct exciton increases from 0.50 to 0.63 meV at 7 T by substituting Br for Cl. Comparison with analogous results for Cs2AgBiCl6 nanocrystals, obtained by cation substitution, suggests an important effect of charge distribution within electronic bands on the excitonic Zeeman splitting. This work demonstrates that the magneto-optical properties of these materials can be effectively manipulated via chemical composition, suggesting promising applications in photonics, spintronics, and optoelectronics.
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Affiliation(s)
- Lin Feng
- Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - I-Hsuan Yeh
- Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Pavle V Radovanovic
- Department of Chemistry, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
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5
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Veeramuthu L, Liang FR, Chen CH, Liang FC, Lai YT, Yan ZL, Pandiyan A, Tsai CT, Chen WC, Lin JC, Chen MH, Chueh CC, Kuo CC. Realizing Highly Stable Quasi-2D Blue Perovskite Light-Emitting Diodes Using Energy Cascades Generated by Biomolecule-Derived Plasmonic Nanostructures. ACS APPLIED MATERIALS & INTERFACES 2025; 17:1782-1791. [PMID: 39690438 DOI: 10.1021/acsami.4c11447] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/19/2024]
Abstract
Blue perovskite light-emitting diodes (LEDs) lag behind green and red LEDs, which have made considerable strides in efficiency and stability. The main disadvantage is its unmodulated phase domains and low energy transfer efficiency, which impede the efficiency, optical purity, and operational stability of the devices. Herein, we show that using biomolecule-derived plasmonic nanostructures can significantly promote defect passivation, van der Waals gap reduction, and cascade energy transfer through synergistic small-molecule interactions and localized surface plasmonic contributions, thereby improving the electroluminescence (EL) properties and operational stability. The designed blue quasi-2D perovskite LED benefits from the synergistic effect with a higher external quantum efficiency (EQE = 3.51%), EL spectral stability, and superior long-term operational stability. These results validate the optimization of structural and energy cascades of quasi-2D perovskites through a simple and environmentally friendly biomolecular tailorable plasmonic nanostructure approach, paving the way for the development of sustainable electronics.
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Affiliation(s)
- Loganathan Veeramuthu
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Fang-Rong Liang
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Chiung-Han Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Fang-Cheng Liang
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117575, Singapore
| | - Yin-Ti Lai
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Zhen-Li Yan
- Institute of Polymer Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Archana Pandiyan
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Chun-Tse Tsai
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Wei-Cheng Chen
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Jin-Cheng Lin
- Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 106, Taiwan
| | - Mei-Hsin Chen
- Department of Electro-Optical Engineering, National Taipei University of Technology, Taipei 106, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwan
| | - Chi-Ching Kuo
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
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6
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Zhou L, Yan M, Luo G, Xu L, Fang Y, Yang D. Bottom Electrode Modification Enables Efficient and Bright Silicon-Based Top-Emission Perovskite Light-Emitting Diodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025; 21:e2404181. [PMID: 39449561 DOI: 10.1002/smll.202404181] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2024] [Revised: 10/13/2024] [Indexed: 10/26/2024]
Abstract
The integration of perovskites with mature silicon platform has emerged as a promising approach in the development of efficient on-chip light sources and high-brightness displays. However, the performance of Si-based green perovskite light-emitting diodes (PeLEDs) still falls significantly short compared to their red and near-infrared counterparts. In this study, it is revealed that the high work function Au, widely employed in Si-based top-emission PeLEDs as the reflective bottom electrode, exhibits considerably lower reflectivity in the green spectrum than in the longer wavelengths. Consequently, Ag electrode is introduced to replace Au to enhance the green light reflectivity, and the ultrathin MoO3 and self-assembled monolayers (SAMs) are sequentially deposited for surface modification. These results indicate that the MoO3 layer removes the energy barrier at Ag/polymer hole transport layer interface, enhancing the hole injection efficiency; while the SAMs firmly anchor onto the MoO3 layer, effectively preventing interfacial defect formation. Benefited from this organic/inorganic dual-layer modification strategy, Si-based green PeLEDs with an impressive peak external quantum efficiency of 18.2% and a maximum brightness of 81931 cd m-2 are successfully fabricated, on par with those of the red and near-infrared counterparts. This achievement marks an advancement in developing high-performance Si-based PeLEDs with full-spectrum output.
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Affiliation(s)
- Lingfeng Zhou
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Minxing Yan
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Guangjie Luo
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Li Xu
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yanjun Fang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
- Shangyu Institute of Semiconductor Materials, Shaoxing, 312300, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, 030024, P. R. China
| | - Deren Yang
- State Key Laboratory of Silicon and Advanced Semiconductor Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
- Shangyu Institute of Semiconductor Materials, Shaoxing, 312300, P. R. China
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7
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Zhang K, Shen Y, Cao LX, Su ZH, Hu XM, Feng SC, Wang BF, Xie FM, Li HZ, Gao X, Li YQ, Tang JX. Nondestructive halide exchange via S N2-like mechanism for efficient blue perovskite light-emitting diodes. Nat Commun 2024; 15:10621. [PMID: 39639009 PMCID: PMC11621679 DOI: 10.1038/s41467-024-55074-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2024] [Accepted: 11/29/2024] [Indexed: 12/07/2024] Open
Abstract
Blue perovskite light-emitting diodes (PeLEDs) still remain poorly developed due to the big challenge of achieving high-quality mixed-halide perovskites with wide optical bandgaps. Halide exchange is an effective scheme to tune the emission color of PeLEDs, while making perovskites susceptible to high defect density due to solvent erosion. Herein, we propose a versatile strategy for nondestructive in-situ halide exchange to obtain high-quality blue perovskites with low trap density and tunable bandgaps through long alkyl chain chloride incorporated chloroform post-treatment. In comparison with conventional halide exchange method, the ionic exchange mechanism of the present strategy is similar to a bimolecular nucleophilic substitution process, which simultaneously modulates perovskite bandgaps and inhibits new halogen vacancy generation. Consequently, efficient PeLEDs across blue spectral regions are obtained, exhibiting external quantum efficiencies of 23.6% (sky-blue emission at 488 nm), 20.9% (pure-blue emission at 478 nm), and 15.0% (deep-blue emission at 468 nm), respectively.
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Affiliation(s)
- Kai Zhang
- Macao Institute of Materials Science and Engineering (MIMSE), Faculty of Innovation Engineering, Macau University of Science and Technology, Taipa, Macao, China
| | - Yang Shen
- Macao Institute of Materials Science and Engineering (MIMSE), Faculty of Innovation Engineering, Macau University of Science and Technology, Taipa, Macao, China.
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, China.
| | - Long-Xue Cao
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, China
| | - Zhen-Huang Su
- Shanghai Synchrotron Radiation Facility, Zhangjiang Laboratory, Chinese Academy of Sciences, Shanghai, China
| | - Xin-Mei Hu
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, China
| | - Shi-Chi Feng
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, China
| | - Bing-Feng Wang
- School of Physics and Electronic Science, East China Normal University, Shanghai, China
| | - Feng-Ming Xie
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, China
| | - Hao-Ze Li
- School of Physics and Electronic Science, East China Normal University, Shanghai, China
| | - Xingyu Gao
- Shanghai Synchrotron Radiation Facility, Zhangjiang Laboratory, Chinese Academy of Sciences, Shanghai, China
| | - Yan-Qing Li
- School of Physics and Electronic Science, East China Normal University, Shanghai, China.
| | - Jian-Xin Tang
- Macao Institute of Materials Science and Engineering (MIMSE), Faculty of Innovation Engineering, Macau University of Science and Technology, Taipa, Macao, China.
- Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, China.
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8
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Li J, Li J, An M, Yang S, Bao Y, Wang H, Tang H, Wang H, Fang Y, Qiu J, Bian J, Xu J, Yang Y. Ultralong Compositional Gradient Perovskite Nanowires Fabricated by Source-Limiting Anion Exchange. ACS NANO 2024; 18:30978-30986. [PMID: 39475558 DOI: 10.1021/acsnano.4c06676] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/13/2024]
Abstract
Anion exchange in halide perovskites offers prospective approaches to band gap engineering for miniaturized and integrated optoelectronic devices. However, the band engineering at the nanoscale is uncontrollable due to the rapid and random exchange nature in the liquid or gas phase. Here, we report a source-limiting mechanism in solid-state anion exchange between low-dimensional perovskites, which readily gives access to ultralong compositional gradient nanowires (NWs) with lengths of up to 100 μm. The exchanged NWs remain single-crystalline with intact morphology, while the halogen content exhibits an apparent gradient distribution, leading to a tapered energy band profile along a NW. In the dynamic study of anion behavior, it is shown that the spatial stoichiometric composition can be precisely tuned following Fick's law of diffusion. In addition, self-powered, spectrally resolved photodetectors incorporating multiple detection units within a single gradient NW are demonstrated. This work provides a feasible strategy for the realization of perovskite-based ultracompact optoelectronics, imaging sensors, and other miniaturized semiconductor devices.
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Affiliation(s)
- Jing Li
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Physics, Dalian University of Technology, No.2 Linggong Road, Dalian 116024, China
| | - Jianliang Li
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Meiqi An
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Shuai Yang
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Yanan Bao
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Hengshan Wang
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Huayi Tang
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Haotian Wang
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Yurui Fang
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Physics, Dalian University of Technology, No.2 Linggong Road, Dalian 116024, China
| | - Jijun Qiu
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Jiming Bian
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Physics, Dalian University of Technology, No.2 Linggong Road, Dalian 116024, China
| | - Jiao Xu
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Yiming Yang
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
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9
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Liu C, Zhang D, Sun J, Li D, Xiong Q, Lyu B, Guo W, Choy WCH. Constructing Multi‐Functional Polymeric‐Termination Surface Enables High‐Performance Flexible Perovskite LEDs. ADVANCED FUNCTIONAL MATERIALS 2024; 34. [DOI: 10.1002/adfm.202404791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2024] [Indexed: 01/03/2025]
Abstract
AbstractFlexible perovskite light‐emitting diodes (f‐PeLEDs) have attracted increasing interest to realize true‐color, low‐cost, and light‐weight wearable optoelectronic and flexible display applications. However, their external quantum efficiency (EQE) and mechanical stability lag far behind because of the inherent surface and brittle issues of polycrystalline perovskite films. In this work, a multi‐functional polymeric‐termination surface of perovskite film is constructed for achieving efficient and mechanically stable f‐PeLEDs. It takes the roles to not only reduce defects through equipping coordination groups to improve emission properties, but also optimize film morphology and eliminate pinholes to solve the long‐standing issue of leakage current. Meanwhile, the polymeric‐termination surface with anchoring points and polymeric soft chains on perovskites demonstrates synergetic effects beyond the corresponding functional group‐only or polymer‐only strategies in reducing the Young's modulus and improving the mechanical flexibility. Ultimately, the record EQE of 22.1% and significantly enhanced mechanical stability of maintaining 82% of the initial performance after 2000 bending cycles with radius of 5 mm are achieved in pure‐green f‐PeLEDs. The work paves the way for the development of high‐performance flexible optoelectronic devices.
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Affiliation(s)
- Chunyu Liu
- Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong 000000 China
- State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China
| | - Dezhong Zhang
- Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong 000000 China
| | - Jiayun Sun
- Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong 000000 China
- Department of Electronic and Electrical Engineering Southern University of Science and Technology Shenzhen 518055 China
| | - Dongyu Li
- Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong 000000 China
| | - Qi Xiong
- Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong 000000 China
| | - Benzheng Lyu
- Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong 000000 China
| | - Wenbin Guo
- State Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 China
| | - Wallace C. H. Choy
- Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong 000000 China
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10
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Qi H, Tong Y, Zhang X, Wang H, Zhang L, Chen Y, Wang Y, Shang J, Wang K, Wang H. Homogenizing Energy Landscape for Efficient and Spectrally Stable Blue Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2409319. [PMID: 39302002 DOI: 10.1002/adma.202409319] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2024] [Revised: 09/05/2024] [Indexed: 09/22/2024]
Abstract
Blue perovskite light-emitting diodes (PeLEDs) have attracted enormous attention; however, their unsatisfactory device efficiency and spectral stability still remain great challenges. Unfavorable low-dimensional phase distribution and defects with deeper energy levels usually cause energy disorder, substantially limiting the device's performance. Here, an additive-interface optimization strategy is reported to tackle these issues, thus realizing efficient and spectrally stable blue PeLEDs. A new type of additive-formamidinium tetrafluorosuccinate (FATFSA) is introduced into the quasi-2D mixed halide perovskite accompanied by interface engineering, which effectively impedes the formation of undesired low-dimensional phases with various bandgaps throughout the entire film, thereby boosting energy transfer process for accelerating radiative recombination; this strategy also diminishes the halide vacancies especially chloride-related defects with deep energy level, thus reducing nonradiative energy loss for efficient radiative recombination. Benefitting from homogenized energy landscape throughout the entire perovskite emitting layer, PeLEDs with spectrally-stable blue emission (478 nm) and champion external quantum efficiency (EQE) of 21.9% are realized, which represents a record value among this type of PeLEDs in the pure blue region.
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Affiliation(s)
- Heng Qi
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Yu Tong
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Xuewen Zhang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710129, P. R. China
| | - Hao Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Lu Zhang
- Key Laboratory of Applied Surface and Colloid Chemistry Ministry of Education, School of Materials Science Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Yali Chen
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Yibo Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Jingzhi Shang
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710129, P. R. China
| | - Kun Wang
- School of Microelectronics, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Hongqiang Wang
- State Key Laboratory of Solidification Processing, Center for Nano Energy Materials, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
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11
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Lee HK, Park T, Yoo H. Device Applications Enabled by Bandgap Engineering Through Quantum Dot Tuning: A Review. MATERIALS (BASEL, SWITZERLAND) 2024; 17:5335. [PMID: 39517603 PMCID: PMC11547182 DOI: 10.3390/ma17215335] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/04/2024] [Revised: 10/14/2024] [Accepted: 10/22/2024] [Indexed: 11/16/2024]
Abstract
Quantum dots (QDs) are becoming essential materials for future scientific and real-world applications, owing to their interesting and distinct optical and electrical properties compared to their bulk-state counterparts. The ability to tune the bandgap of QDs based on size and composition-a key characteristic-opens up new possibilities for enhancing the performance of various optoelectronic devices. These advances could extend to cutting-edge applications such as ultrawide-band or dual-band photodetectors (PDs), optoelectronic logic gates, neuromorphic devices, and security functions. This paper revisits the recent progress in QD-embedded optoelectronic applications, focusing on bandgap tunability. The current limitations and challenges in advancing and realizing QD-based optoelectronic devices are also discussed.
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Affiliation(s)
- Ho Kyung Lee
- Smart Materials Research Center for IoT, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea;
- Department of Chemical and Biological Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
| | - Taehyun Park
- Department of Semiconductor Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea;
| | - Hocheon Yoo
- Department of Semiconductor Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea;
- Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
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12
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Liu H, Shi G, Peng C, Chen W, Yao H, Xiao Z. Advances and Challenges in Large-Area Perovskite Light-Emitting Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2410154. [PMID: 39318091 DOI: 10.1002/adma.202410154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2024] [Revised: 09/07/2024] [Indexed: 09/26/2024]
Abstract
Metal halide perovskite light-emitting diodes (PeLEDs) have shown promise for high-definition displays and flat-panel lighting because of their wide color gamut, narrow emission band, and high brightness. The external quantum efficiency of PeLEDs increased rapidly from ≈1% to more than 25% in the past few years. However, most of these high-performance devices are fabricated using a spin coating method with a small device area of <0.1 cm2, limiting their commercial applications. Recently, large-area PeLEDs have attracted growing attention and significant breakthroughs have been reported. This perspective first introduces the pros and cons of each technique in making large-area PeLEDs. The advances in the fabrication of large-area PeLEDs are then summarized using spin coating and mass-production methods such as inkjet printing, blade coating, and thermal evaporation. Moreover, the challenging issues will be discussed that are urgent to be solved for large-area PeLEDs.
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Affiliation(s)
- Hui Liu
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Guangyi Shi
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Chenchen Peng
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Wenjing Chen
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Haitao Yao
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zhengguo Xiao
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
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13
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Zheng S, Wang Z, Jiang N, Huang H, Wu X, Li D, Teng Q, Li J, Li C, Li J, Pang T, Zeng L, Zhang R, Huang F, Lei L, Wu T, Yuan F, Chen D. Ultralow voltage-driven efficient and stable perovskite light-emitting diodes. SCIENCE ADVANCES 2024; 10:eadp8473. [PMID: 39241067 PMCID: PMC11378915 DOI: 10.1126/sciadv.adp8473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2024] [Accepted: 08/01/2024] [Indexed: 09/08/2024]
Abstract
The poor operational stability of perovskite light-emitting diodes (PeLEDs) remains a major obstacle to their commercial application. Achieving high brightness and quantum efficiency at low driving voltages, thus effectively reducing heat accumulation, is key to enhancing the operational lifetime of PeLEDs. Here, we present a breakthrough, attaining a record-low driving voltage while maintaining high brightness and efficiency. By thoroughly suppressing interface recombination and ensuring excellent charge transport, our PeLEDs, with an emission peak at 515 nanometers, achieve a maximum brightness of 90,295 candelas per square meter and a peak external quantum efficiency of 27.8% with an ultralow turn-on voltage of 1.7 volts (~70% bandgap voltage). Notably, Joule heat is nearly negligible at these low driving voltages, substantially extending the operational lifetime to 7691.1 hours. Our optimized strategies effectively tackle stability issue through thermal management, paving the way for highly stable PeLEDs.
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Affiliation(s)
- Song Zheng
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350117, China
| | - Zhibin Wang
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350117, China
| | - Naizhong Jiang
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350117, China
| | - Hailiang Huang
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350117, China
| | - Ximing Wu
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350117, China
| | - Dan Li
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350117, China
| | - Qian Teng
- Key Laboratory of Theoretical and Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Jinyang Li
- Key Laboratory of Theoretical and Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Chenhao Li
- Key Laboratory of Theoretical and Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Jinsui Li
- Key Laboratory of Theoretical and Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Tao Pang
- Huzhou Key Laboratory of Materials for Energy Conversion and Storage, College of Science, Huzhou University, Huzhou 313000, China
| | - Lingwei Zeng
- School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan, Hunan 411201, China
| | - Ruidan Zhang
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350117, China
| | - Feng Huang
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350117, China
| | - Lei Lei
- Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou 310018, China
| | - Tianmin Wu
- Key Laboratory of Opto-Electronic Science and Technology for Medicine of Ministry of Education, College of Photonic and Electronic Engineering, Fujian Normal University, Fuzhou 350117, China
| | - Fanglong Yuan
- Key Laboratory of Theoretical and Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, China
| | - Daqin Chen
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou 350117, China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fuzhou 350117, China
- Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage, Fuzhou 350117, China
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14
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Beegum KAB, Sasi S, Thomas C, Mathew A, Raman R. Bluish-white Light-emitting 2D Sheets of Lead-free Perovskite Cesium Titanium Bromide (CsTiBr 3) by a Two-stage Deposition Technique. J Fluoresc 2024; 34:2325-2333. [PMID: 37768464 DOI: 10.1007/s10895-023-03444-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2023] [Accepted: 09/18/2023] [Indexed: 09/29/2023]
Abstract
Bluish-white light-emitting materials are commonly used in LED lighting because they produce natural-looking light. Here we report the photoluminescent emission (PL) of novel, two-dimensional lead-free CsTiBr3 perovskite prepared via a two-stage deposition process. The formation of two-dimensional nanosheets of CsTiBr3 perovskite is confirmed by XRD, EDAX, and FESEM analysis. The height of the cesium bromide thin film substrate from the titanium bromide vapor source plays an important role in the formation of two-dimensional CsTiBr3. The CsTiBr3 perovskite nanosheets exhibit unique exciton- luminescence at 440 nm and self-trapped exciton emission at 595 nm which are the characteristics of two-dimensional halide structure, along with the band-to-band emission at 400 nm at an excitation wavelength of 340 nm. The resulting bluish-white light PL emission makes two-dimensional CsTiBr3 perovskite an alternative material to the traditional lead-based perovskite in LEDs, display technology, solid-state lighting, and various optoelectronic devices, addressing environmental concerns.
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Affiliation(s)
- K A Benazeera Beegum
- Optoelectronic and Nanomaterials Research Laboratory, Department of Physics, Union Christian College, Aluva, 683102, Kerala, India
| | - Saranya Sasi
- Optoelectronic and Nanomaterials Research Laboratory, Department of Physics, Union Christian College, Aluva, 683102, Kerala, India
| | - Christeena Thomas
- Optoelectronic and Nanomaterials Research Laboratory, Department of Physics, Union Christian College, Aluva, 683102, Kerala, India
| | - Alex Mathew
- Optoelectronic and Nanomaterials Research Laboratory, Department of Physics, Union Christian College, Aluva, 683102, Kerala, India
| | - Reshmi Raman
- Optoelectronic and Nanomaterials Research Laboratory, Department of Physics, Union Christian College, Aluva, 683102, Kerala, India.
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15
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Zhang Q, Zhang D, Liao Z, Cao YB, Kumar M, Poddar S, Han J, Hu Y, Lv H, Mo X, Srivastava AK, Fan Z. Perovskite Light-Emitting Diodes with Quantum Wires and Nanorods. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405418. [PMID: 39183527 DOI: 10.1002/adma.202405418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2024] [Revised: 06/22/2024] [Indexed: 08/27/2024]
Abstract
Perovskite materials, celebrated for their exceptional optoelectronic properties, have seen extensive application in the field of light-emitting diodes (LEDs), where research is as abundant as the proverbial "carloads of books." In this review, the research of perovskite materials is delved into from a dimensional perspective, with a focus on the exemplary performance of low-dimensional perovskite materials in LEDs. This discussion predominantly revolves around perovskite quantum wires and perovskite nanorods. Perovskite quantum wires are versatile in their growth, compatible with both solution-based and vapor-phase growth, and can be deposited over large areas-even on spherical substrates-to achieve commendable electroluminescence (EL). Perovskite nanorods, on the other hand, boast a suite of superior characteristics, such as polarization properties and tunability of the transition dipole moment, endowing them with the great potential to enhance light extraction efficiency. Furthermore, zero-dimensional (0D) perovskite materials like nanocrystals (NCs) are also the subject of widespread research and application. This review reflects on and synthesizes the unique qualities of the aforementioned materials while exploring their vital roles in the development of high-efficiency perovskite LEDs (PeLEDs).
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Affiliation(s)
- Qianpeng Zhang
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Daquan Zhang
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Zebing Liao
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Yang Bryan Cao
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Mallem Kumar
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Swapnadeep Poddar
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Junchao Han
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Ying Hu
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Hualiang Lv
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Xiaoliang Mo
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Abhishek Kumar Srivastava
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
| | - Zhiyong Fan
- Department of Electronic & Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, 999077, China
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16
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Gao Y, Cai Q, He Y, Zhang D, Cao Q, Zhu M, Ma Z, Zhao B, He H, Di D, Ye Z, Dai X. Highly efficient blue light-emitting diodes based on mixed-halide perovskites with reduced chlorine defects. SCIENCE ADVANCES 2024; 10:eado5645. [PMID: 39018409 PMCID: PMC466955 DOI: 10.1126/sciadv.ado5645] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2024] [Accepted: 06/14/2024] [Indexed: 07/19/2024]
Abstract
Perovskite light-emitting diodes (PeLEDs) provide excellent opportunities for low-cost, color-saturated, and large-area displays. However, the performance of blue PeLEDs lags far behind that of their green and red counterparts. Here, we show that the external quantum efficiencies (EQEs) of blue PeLEDs scale linearly with the photoluminescence quantum yields (PL QYs) of CsPb(BrxCl1-x)3 nanocrystals emitting at 460 to 480 nm. The recombination efficiency of carriers is highly sensitive to the chlorine content and the related deep-level defects in nanocrystals, causing notable EQE drops even with minor increases in chlorine defects. Minor adjustments of chlorine content through rubidium compensation on the A-site effectively suppress the formation of nonradiative defects, improving PL QYs while retaining desirable bandgaps for blue-emitting nanocrystals. Our PeLEDs with record-high efficiencies span the blue spectrum, achieving peak EQEs of 12.0% (460 nm), 16.7% (465 nm), 21.3% (470 nm), 24.3% (475 nm), and 26.4% (480 nm). This work exemplifies chlorine-defect control as a key design principle for high-efficiency blue PeLEDs.
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Affiliation(s)
- Yun Gao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Qiuting Cai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
| | - Yifan He
- Wenzhou XINXINTAIJING Tech. Co. Ltd., Wenzhou 325006, China
| | - Dingshuo Zhang
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Qingli Cao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Meiyi Zhu
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Zichao Ma
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
| | - Baodan Zhao
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
| | - Haiping He
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China
| | - Dawei Di
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering; International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, China
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials and Engineering Research Center of Zhejiang Province, Institute of Wenzhou, Zhejiang University, Wenzhou 325006, China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030002, China
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17
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Ballenger J, Giunta KS, Carlson R, Nicholas AD, Ducati LC, Oliveira de Brito MO, Zeller M, Pike RD. Ternary Complexes of BiI 3/CuI and SbI 3/CuI with Tetrahydrothiophene. Inorg Chem 2024; 63:11688-11699. [PMID: 38850561 PMCID: PMC11200257 DOI: 10.1021/acs.inorgchem.4c01147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2024] [Revised: 05/30/2024] [Accepted: 05/31/2024] [Indexed: 06/10/2024]
Abstract
Reactions of BiI3/CuI mixtures with tetrahydrothiophene (THT) in toluene produce 2-D sheet networks BiCu3I6(THT)n (n = 2, 3, or 4), depending on reaction conditions. All three structures are based on BiI6 octahedra, which share pairs of (μ2-I)2 with Cu3(THT)n units. BiCu3I6(THT)2 features Cu2(μ2-I)2 rhombs with close Cu···Cu interactions and is accompanied by formation of the very complex HBi3Cu12I22(THT)8. Reactions of SbI3/CuI with THT in toluene produced a SbCu3I6(THT)2 network shows Cu3(μ2-THT)2 units, like its Bi congener, but Cu6(μ2-I)6 barrels rather than rhombs. Isolated SbI3 units are stacked above the Cu6I6 barrels. A molecular compound, Sb3Cu3I12(THT)6 consists of a face-sharing Sb3I12 stack, in which the Cu-THT units are bonded in asymmetric fashion about the central SbI6. Metal-halide bonds were investigated via QTAIM and NLMO analyses, demonstrating that these bonds are largely ionic and occur between the Bi/Sb and I p orbitals. Hirshfeld analysis shows significant H···H and H···I interactions. Diffuse reflectance spectroscopy (DRS) reveals band edges for the Bi species of 1.71-1.82 eV, while those for the neutral Sb complexes are in the range of 1.94-2.06 eV. Mapping of the electronic structure via density of state calculations indicates population of antibonding Bi/Sb-I orbitals in the excited state.
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Affiliation(s)
- James
H. Ballenger
- Department
of Chemistry, William & Mary, Williamsburg ,Virginia 23187, United States
| | - Katherine S. Giunta
- Department
of Chemistry, William & Mary, Williamsburg ,Virginia 23187, United States
| | - Ruby Carlson
- Department
of Chemistry, William & Mary, Williamsburg ,Virginia 23187, United States
| | - Aaron D. Nicholas
- National
Security Directorate, Pacific Northwest
National Laboratory, Richland ,Washington 99354,United States
| | - Lucas C. Ducati
- Institute
of Chemistry, Universidade São Paulo, São Paulo ,SP 05508-220, Brazil
| | | | - Matthias Zeller
- Department
of Chemistry, Purdue University, West Lafayette ,Indiana 47907-2084, United
States
| | - Robert D. Pike
- Department
of Chemistry, William & Mary, Williamsburg ,Virginia 23187, United States
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18
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Zhang Z, Niu Q, Chai B, Xiong J, Chen Y, Zeng W, Peng X, Iwuoha EI, Xia R. Enhanced Efficiency and Stability of Sky Blue Perovskite Light-Emitting Diodes via Introducing Lead Acetate. Molecules 2024; 29:2425. [PMID: 38893300 PMCID: PMC11174098 DOI: 10.3390/molecules29112425] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/25/2024] [Revised: 05/04/2024] [Accepted: 05/16/2024] [Indexed: 06/21/2024] Open
Abstract
All-inorganic metal halide perovskite is promising for highly efficient and thermally stable perovskite light-emitting diodes (PeLEDs). However, there is still great room for improvement in the film quality, including low coverage and high trap density, which play a vital role in achieving high-efficiency PeLEDs. In this work, lead acetate (Pb(Ac)2) was introduced into the perovskite precursor solution as an additive. Experimental results show that perovskite films deposited from a one-step anti-solvent free solution process with increased surface coverage and reduced trap density were obtained, leading to enhanced photoluminescence (PL) intensity. More than that, the valence band maximum (VBM) of perovskite films was reduced, bringing about a better energy level matching the work function of the hole-injection layer (HIL) poly (3,4-ethylenedioxythiophene)-poly (styrene sulfonate) (PEDOT: PSS), which is facilitated for the hole injection, leading to a decrease in the turn-on voltage (Vth) of PeLEDs from 3.4 V for the control device to 2.6 V. Finally, the external quantum efficiency (EQE) of the sky blue PeLEDs (at 484 nm) increased from 0.09% to 0.66%. The principles of Pb(Ac)2 were thoroughly investigated by using X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). This work provides a simple and effective strategy for improving the morphology of perovskite and therefore the performance of PeLEDs.
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Affiliation(s)
- Zequan Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China; (Z.Z.); (B.C.); (J.X.); (Y.C.); (W.Z.)
| | - Qiaoli Niu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China; (Z.Z.); (B.C.); (J.X.); (Y.C.); (W.Z.)
| | - Baoxiang Chai
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China; (Z.Z.); (B.C.); (J.X.); (Y.C.); (W.Z.)
| | - Junhao Xiong
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China; (Z.Z.); (B.C.); (J.X.); (Y.C.); (W.Z.)
| | - Yuqing Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China; (Z.Z.); (B.C.); (J.X.); (Y.C.); (W.Z.)
| | - Wenjin Zeng
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China; (Z.Z.); (B.C.); (J.X.); (Y.C.); (W.Z.)
| | - Xinwen Peng
- State Key Laboratory of Pulp and Paper Engineering, School of Light Industry and Engineering, South China University of Technology, Guangzhou 510640, China;
| | - Emmanuel Iheanyichukwu Iwuoha
- Sensor Lab (University of the Western Cape Sensor Laboratories), 4th Floor Chemical Sciences Building, University of the Western Cape, Robert Sobukwe Road, Bellville, Cape Town 7535, South Africa;
| | - Ruidong Xia
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China; (Z.Z.); (B.C.); (J.X.); (Y.C.); (W.Z.)
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19
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Ren B, Zhang D, Qiu X, Ding Y, Zhang Q, Fu Y, Liao JF, Poddar S, Chan CLJ, Cao B, Wang C, Zhou Y, Kuang DB, Zeng H, Fan Z. Full-color fiber light-emitting diodes based on perovskite quantum wires. SCIENCE ADVANCES 2024; 10:eadn1095. [PMID: 38748790 PMCID: PMC11095450 DOI: 10.1126/sciadv.adn1095] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Accepted: 04/11/2024] [Indexed: 05/19/2024]
Abstract
Fiber light-emitting diodes (Fi-LEDs), which can be used for wearable lighting and display devices, are one of the key components for fiber/textile electronics. However, there exist a number of impediments to overcome on device fabrication with fiber-like substrates, as well as on device encapsulations. Here, we uniformly grew all-inorganic perovskite quantum wire arrays by filling high-density alumina nanopores on the surface of Al fibers with a dip-coating process. With a two-step evaporation method to coat a surrounding transporting layer and semitransparent electrode, we successfully fabricated full-color Fi-LEDs with emission peaks at 625 nanometers (red), 512 nanometers (green), and 490 nanometers (sky-blue), respectively. Intriguingly, additional polydimethylsiloxane packaging helps instill the mechanical bendability, stretchability, and waterproof feature of Fi-LEDs. The plasticity of Al fiber also allows the one-dimensional architecture Fi-LED to be shaped and constructed for two-dimensional or even three-dimensional architectures, opening up a new vista for advanced lighting with unconventional formfactors.
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Affiliation(s)
- Beitao Ren
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Daquan Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Xiao Qiu
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yucheng Ding
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Qianpeng Zhang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yu Fu
- School of Advanced Energy, Shenzhen Campus of Sun Yat-sen University, Shenzhen 518107, P. R. China
| | - Jin-Feng Liao
- MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Swapnadeep Poddar
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Chak Lam Jonathan Chan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Bryan Cao
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Chen Wang
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Yu Zhou
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
| | - Dai-Bin Kuang
- MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou 510275, P. R. China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR, China
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China
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20
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Gong X, Hao X, Si J, Deng Y, An K, Hu Q, Cai Q, Gao Y, Ke Y, Wang N, Du Z, Cai M, Ye Z, Dai X, Liu Z. High-Performance All-Inorganic Architecture Perovskite Light-Emitting Diodes Based on Tens-of-Nanometers-Sized CsPbBr 3 Emitters in a Carrier-Confined Heterostructure. ACS NANO 2024; 18:8673-8682. [PMID: 38471123 DOI: 10.1021/acsnano.3c09004] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Developing green perovskite light-emitting diodes (PeLEDs) with a high external quantum efficiency (EQE) and low efficiency roll-off at high brightness remains a critical challenge. Nanostructured emitter-based devices have shown high efficiency but restricted ascending luminance at high current densities, while devices based on large-sized crystals exhibit low efficiency roll-off but face great challenges to high efficiency. Herein, we develop an all-inorganic device architecture combined with utilizing tens-of-nanometers-sized CsPbBr3 (TNS-CsPbBr3) emitters in a carrier-confined heterostructure to realize green PeLEDs that exhibit high EQEs and low efficiency roll-off. A typical type-I heterojunction containing TNS-CsPbBr3 crystals and wide-bandgap Cs4PbBr6 within a grain is formed by carefully controlling the precursor ratio. These heterostructured TNS-CsPbBr3 emitters simultaneously enhance carrier confinement and retain low Auger recombination under a large injected carrier density. Benefiting from a simple device architecture consisting of an emissive layer and an oxide electron-transporting layer, the PeLEDs exhibit a sub-bandgap turn-on voltage of 2.0 V and steeply rising luminance. In consequence, we achieved green PeLEDs demonstrating a peak EQE of 17.0% at the brightness of 36,000 cd m-2, and the EQE remained at 15.7% and 12.6% at the brightness of 100,000 and 200,000 cd m-2, respectively. In addition, our results underscore the role of interface degradation during device operation as a factor in device failure.
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Affiliation(s)
- Xinquan Gong
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Xiaoming Hao
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Junjie Si
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Yunzhou Deng
- Cavendish Laboratory, University of Cambridge, Cambridge, CB3 0HE U.K
| | - Kai An
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Qianqing Hu
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Qiuting Cai
- School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou Zhejiang University, Wenzhou 325006, People's Republic of China
| | - Yun Gao
- School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou Zhejiang University, Wenzhou 325006, People's Republic of China
| | - You Ke
- Shaanxi Institute of Flexible Electronics (SIFE), Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University (NPU) 127 West Youyi Road, Xi'an 710072, People's Republic of China
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, People's Republic of China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, People's Republic of China
| | - Zhuopeng Du
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Muzhi Cai
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
| | - Zhizhen Ye
- School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou Zhejiang University, Wenzhou 325006, People's Republic of China
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
- Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou Zhejiang University, Wenzhou 325006, People's Republic of China
| | - Zugang Liu
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, People's Republic of China
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21
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Li Y, Zhang Q, Chong Y, Huang WH, Chen CL, Jin X, Chen G, Fan Z, Qiu Y, Ye D. Efficient Photothermal Catalytic Oxidation Enabled by Three-Dimensional Nanochannel Substrates. ENVIRONMENTAL SCIENCE & TECHNOLOGY 2024; 58:5153-5161. [PMID: 38456428 DOI: 10.1021/acs.est.3c09077] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/09/2024]
Abstract
Photothermal catalysis exhibits promising prospects to overcome the shortcomings of high-energy consumption of traditional thermal catalysis and the low efficiency of photocatalysis. However, there is still a challenge to develop catalysts with outstanding light absorption capability and photothermal conversion efficiency for the degradation of atmospheric pollutants. Herein, we introduced the Co3O4 layer and Pt nanoclusters into the three-dimensional (3D) porous membrane through the atomic layer deposition (ALD) technique, leading to a Pt/Co3O4/AAO monolithic catalyst. The 3D ordered nanochannel structure can significantly enhance the solar absorption capacity through the light-trapping effect. Therefore, the embedded Pt/Co3O4 catalyst can be rapidly heated and the O2 adsorbed on the Pt clusters can be activated to generate sufficient O2- species, exhibiting outstanding activity for the diverse VOCs (toluene, acetone, and formaldehyde) degradation. Optical characterization and simulation calculation confirmed that Pt/Co3O4/AAO exhibited state-of-the-art light absorption and a notable localized surface plasmon resonance (LSPR) effect. In situ diffuse reflectance infrared Fourier transform spectrometry (in situ DRIFTS) studies demonstrated that light irradiation can accelerate the conversion of intermediates during toluene and acetone oxidation, thereby inhibiting byproduct accumulation. Our finding extends the application of AAO's optical properties in photothermal catalytic degradation of air pollutants.
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Affiliation(s)
- Yifei Li
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Atmospheric Environment and Pollution Control, South China University of Technology, Guangzhou, Guangdong 510000, China
| | - Qianpeng Zhang
- State Key Laboratory of Photovoltaic Science and Technology, Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai 200433, China
| | - Yanan Chong
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Atmospheric Environment and Pollution Control, South China University of Technology, Guangzhou, Guangdong 510000, China
| | - Wei-Hsiang Huang
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology (NTUST), Taipei 10607, Taiwan
| | - Chi-Liang Chen
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu 30076, Taiwan
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology (NTUST), Taipei 10607, Taiwan
| | - Xiaojing Jin
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Atmospheric Environment and Pollution Control, South China University of Technology, Guangzhou, Guangdong 510000, China
- College of Light Chemical Industry and Materials Engineering, Shunde Polytechnic, Foshan 528333, P. R. China
| | - Guangxu Chen
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Atmospheric Environment and Pollution Control, South China University of Technology, Guangzhou, Guangdong 510000, China
| | - Zhiyong Fan
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong SAR, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong SAR, China
| | - Yongcai Qiu
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Atmospheric Environment and Pollution Control, South China University of Technology, Guangzhou, Guangdong 510000, China
| | - Daiqi Ye
- School of Environment and Energy, State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Atmospheric Environment and Pollution Control, South China University of Technology, Guangzhou, Guangdong 510000, China
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22
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Huang Y, Zhu J, Li J, Luo J, Du P, Song B, Tang J. Thermally Evaporated Blue Quasi-Two-Dimensional Perovskite Light-Emitting Diodes via Low-Dimensional Phase Distribution Arrangement. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38471065 DOI: 10.1021/acsami.3c17082] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Perovskite light-emitting diodes (PeLEDs) have shown great potential in the display domain due to their wide color gamut, narrow emission, and low cost. In current PeLEDs manufacturing methods, thermal evaporation shows great competitiveness with its advantages of easy patterning, production line compatibility, and solvent-free processability. However, the development of thermally evaporated blue PeLEDs is limited by their low radiative recombination rate and high defect density. Herein, we report high-performance thermally evaporated blue PeLEDs by in situ introduction of ammonium cations. We confirm that phenethylammonium (PEA+) has lower adsorption energy, which significantly reduces the low-n phases in a quasi-2D perovskite film. The energy transfer rate is also promoted by the PEA+ addition. As a result, we fabricate blue PeLEDs with an external quantum efficiency of 1.56% by thermal evaporation. The strategy of arranging phase distribution could benefit the industrialization of full-color PeLEDs.
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Affiliation(s)
- Yuanlong Huang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Jiaxing Zhu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Jinghui Li
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Jiajun Luo
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Peipei Du
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Boxiang Song
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
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23
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Liu H, Shi G, Khan R, Chu S, Huang Z, Shi T, Sun H, Li Y, Zhou H, Xiao P, Chen T, Xiao Z. Large-Area Flexible Perovskite Light-Emitting Diodes Enabled by Inkjet Printing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309921. [PMID: 38016083 DOI: 10.1002/adma.202309921] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 11/14/2023] [Indexed: 11/30/2023]
Abstract
Metal halide perovskite light-emitting diodes (PeLEDs) are attracting increasing attention due to their potential applications in flat panel lighting and displays. The solution process, large-area fabrication, and flexibility are attractive properties of PeLEDs over traditional inorganic LEDs. However, it is still very challenging to deposit uniform perovskite films on flexible substrates using a blade or slot-die coating, as the flexible substrate is not perfectly flat. Here, the inkjet printing technique is adopted, and the key challenges are overcome step-by-step in preparing large-area films on flexible substrates. Double-hole transporting layers are first used and a wetting interfacial layer to improve the surface wettability so that the printed perovskite droplets can form a continuous wet film. The fluidic and evaporation dynamics of the perovskite wet layer is manipulated to suppress the coffee ring effect by solvent engineering. Uniform perovskite films are obtained finally on flexible substrates with different perovskite compositions. The peak external quantum efficiency of the inkjet-printed PeLEDs reaches 14.3%. Large-area flexible PeLEDs (4 × 7 cm2 ) also show very uniform emission. This work represents a significant step toward real applications of large-area PeLEDs in flexible flat-panel lighting.
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Affiliation(s)
- Hui Liu
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Guangyi Shi
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Rashid Khan
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Shenglong Chu
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zongming Huang
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Tongfei Shi
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, Anhui, 230031, China
| | - Haiding Sun
- School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Yaping Li
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Hongmin Zhou
- Instruments Center for Physical Science, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Peng Xiao
- Department of Materials Science and Engineering, CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Tao Chen
- Department of Materials Science and Engineering, CAS Key Laboratory of Materials for Energy Conversion, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zhengguo Xiao
- Department of Physics, CAS Key Laboratory of Strongly coupled Quantum Matter Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
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24
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Poddar S, Chen Z, Kumar S, Zhang D, Ding Y, Long Z, Ma Z, Zhang Q, Fan Z. Geometric Shape Recognition with an Ultra-High Density Perovskite Nanowire Array-Based Artificial Vision System. ACS APPLIED MATERIALS & INTERFACES 2024; 16:5028-5035. [PMID: 38235664 DOI: 10.1021/acsami.3c18719] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2024]
Abstract
Artificial vision systems (AVS) have potential applications in visual prosthetics and artificially intelligent robotics, and they require a preprocessor and a processor to mimic human vision. Halide perovskite (HP) is a promising preprocessor and processor due to its excellent photoresponse, ubiquitous charge migration pathways, and innate hysteresis. However, the material instability associated with HP thin films hinders their utilization in physical AVSs. Herein, we have developed ultrahigh-density arrays of robust HP nanowires (NWs) rooted in a porous alumina membrane (PAM) as the active layer for an AVS. The NW devices exhibit gradual photocurrent change, responding to changes in light pulse duration, intensity, and number, and allow contrast enhancement of visual inputs with a device lifetime of over 5 months. The NW-based processor possesses temporally stable conductance states with retention >105 s and jitter <10%. The physical AVS demonstrated 100% accuracy in recognizing different shapes, establishing HP as a reliable material for neuromorphic vision systems.
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Affiliation(s)
- Swapnadeep Poddar
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR 999077, China
| | - Zhesi Chen
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR 999077, China
| | - Shivam Kumar
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR 999077, China
| | - Daquan Zhang
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR 999077, China
| | - Yucheng Ding
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR 999077, China
| | - Zhenghao Long
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR 999077, China
| | - Zichao Ma
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR 999077, China
| | - Qianpeng Zhang
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR 999077, China
| | - Zhiyong Fan
- Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR 999077, China
- State Key Laboratory of Advanced Displays and Optoelectronics Technologies, HKUST, Clear Water Bay, Kowloon, Hong Kong SAR 999077, China
- Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR 999077, China
- Shanghai Artificial Intelligence Laboratory, Shanghai 200000, P. R. China
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