Long spin coherence length and bulk-like spin-orbit torque in ferrimagnetic multilayers

Room-Temperature Highly Efficient Nonvolatile Magnetization Switching by Current in van der Waals Fe3GaTe2 Devices

The ability to manipulate magnetic states by a low electric current represents a fundamental desire in spintronics. In recent years, two-dimensional van der Waals (vdW) magnetic materials have attracted an extensive amount of attention due to their appreciable spin-orbit torque effect. However, for most known vdW ferromagnets, their relatively low Curie temperatures (TC) limit their applications. Consequently, low-power vdW spintronic devices that can operate at room temperature are in great demand. In this research, we fabricate nanodevices based on a solitary thin flake of vdW ferromagnet Fe3GaTe2, in which we successfully achieve nonvolatile and highly efficient magnetization switching by small currents at room temperature. Notably, the switching current density and the switching power dissipation are as low as 1.7 × 105 A/cm2 and 1.6 × 1013 W/m3, respectively, with an external magnetic field of 80 Oe; both are much reduced compared to those of conventional magnet/heavy metal heterostructure devices and other vdW devices.

Orbital Torque in Rare-Earth Transition-Metal Ferrimagnets

Orbital currents have recently emerged as a promising tool to achieve electrical control of the magnetization in thin-film ferromagnets. Efficient orbital-to-spin conversion is required in order to torque the magnetization. Here, we show that the injection of an orbital current in a ferrimagnetic Gd_{y}Co_{100-y} alloy generates strong orbital torques whose sign and magnitude can be tuned by changing the Gd content and temperature. The effective spin-orbital Hall angle reaches up to -0.25 in a Gd_{y}Co_{100-y}/CuO_{x} bilayer compared to +0.03 in Co/CuO_{x} and +0.13 in Gd_{y}Co_{100-y}/Pt. This behavior is attributed to the local orbital-to-spin conversion taking place at the Gd sites, which is about 5 times stronger and of the opposite sign relative to Co. Furthermore, we observe a manyfold increase in the net orbital torque at low temperature, which we attribute to the improved conversion efficiency following the magnetic ordering of the Gd and Co sublattices.

Observation of Long-Range Current-Induced Torque in Ni/Pt Bilayers

The generation of current-induced torques through the spin Hall effect in Pt has been key to the development of spintronics. In prototypical ferromagnetic-metal/Pt devices, the characteristic length of the torque generation is known to be about 1 nm due to the short spin diffusion length of Pt. Here, we report the observation of a long-range current-induced torque in Ni/Pt bilayers. We demonstrate that when Ni is used as the ferromagnetic layer, the torque efficiency increases with the Pt thickness, even when it exceeds 10 nm. The torque efficiency is also enhanced by increasing the Ni thickness, providing evidence that the observed torque cannot be attributed to the spin Hall effect in the Pt layer. These findings, coupled with our semirealistic tight-binding calculations of the current-induced torque, suggest the possibility that the observed long-range torque is dominated by the orbital Hall effect in the Pt layer.

Giant Spin-Orbit Torque in Antiferromagnetic-Coupled Pt/[Co/Gd]N Multilayers with Suppressed Spin Dephasing and Robust Thermal Stability

Manipulating magnetization via power-efficient spin-orbit torque (SOT) has garnered significant attention in the field of spin-based memory and logic devices. However, the damping-like SOT efficiency (ξDL) in heavy metal (HM)/ferromagnetic metal (FM) bilayers is relatively small due to the strong spin dephasing accompanied by additional spin polarization decay. Furthermore, the perpendicular magnetic anisotropy (PMA) originating from the HM/FM interface is constrained by the thickness of FM, which is unfavorable for thermal stability in practical applications. Consequently, it is valuable to develop systems that not only exhibit large ξDL but also balance thermal stability. In this work, we designed antiferromagnetic-coupled [Co/Gd]N multilayers, where staggered Co and Gd magnetic moments effectively suppress the spin dephasing and additional spin polarization decay. The ordered Co-Gd arrangements along the out-of-plane direction provide bulk PMA, endowing Pt/[Co/Gd]N high thermal stability. The SOT of Pt/[Co/Gd]N was systematically studied with N, demonstrating a significantly large ξDL of up to 0.66. The ξDL of Pt/[Co/Gd]N is greater than those of Pt/Co and Pt/ferrimagnetic alloys. This significant enhancement relies on the effective suppression of spin dephasing in [Co/Gd]N. Our work highlights that the antiferromagnetic-coupled [Co/Gd]N multilayer is a promising candidate for low-consumption and high-density spintronic devices.

Unexpected versatile electrical transport behaviors of ferromagnetic nickel films

Perpendicular magnetic anisotropy (PMA) of magnets is paramount for electrically controlled spintronics due to their intrinsic potentials for higher memory density, scalability, thermal stability and endurance, surpassing an in-plane magnetic anisotropy (IMA). Nickel film is a long-lived fundamental element ferromagnet, yet its electrical transport behavior associated with magnetism has not been comprehensively studied, hindering corresponding spintronic applications exploiting nickel-based compounds. Here, we systematically investigate the highly versatile magnetism and corresponding transport behavior of nickel films. As the thickness reduces within the general thickness regime of a magnet layer for a memory device, the hardness of nickel films' ferromagnetic loop of anomalous Hall effect increases and then decreases, reflecting the magnetic transitions from IMA to PMA and back to IMA. Additionally, the square ferromagnetic loop changes from a hard to a soft one at rising temperatures, indicating a shift from PMA to IMA. Furthermore, we observe a butterfly magnetoresistance resulting from the anisotropic magnetoresistance effect, which evolves in conjunction with the thickness and temperature-dependent magnetic transformations as a complementary support. Our findings unveil the rich magnetic dynamics and most importantly settle down the most useful guiding information for current-driven spintronic applications based on nickel film: The hysteresis loop is squarest for the ∼8 nm-thick nickel film, of highest hardness withRxyr/Rxys∼ 1 and minimumHs-Hc, up to 125 K; otherwise, extra care should be taken for a different thickness or at a higher temperature.

Quantification of Hybrid Topological Spin Textures and Their Nanoscale Fluctuations in Ferrimagnets

Noncolinear spin textures, including chiral stripes and skyrmions, have shown great potential in spintronics. Basic configurations of spin textures are either Bloch or Néel types, and the intermediate hybrid type has rarely been reported. A major challenge in identifying hybrid spin textures is to quantitatively determine the hybrid angle, especially in ferrimagnets with weak net magnetization. Here, we develop an approach to quantify magnetic parameters, including chirality, saturation magnetization, domain wall width, and hybrid angle with sub-5 nm spatial resolution, based on Lorentz four-dimensional scanning transmission electron microscopy (Lorentz 4D-STEM). We find strong nanometer-scale variations in the hybrid angle and domain wall width within structurally and chemically homogeneous FeGd ferrimagnetic films. These variations fluctuate during different magnetization circles, revealing intrinsic local magnetization inhomogeneities. Furthermore, hybrid skyrmions can also be nucleated in FeGd films. These analyses demonstrate that the Lorentz 4D-STEM is a quantitative tool for exploring complex spin textures.

Deterministic Magnetization Switching via Tunable Noncollinear Spin Configurations in Canted Magnets

Spin obit torque (SOT) driven magnetization switching has been used widely for encoding consumption-efficient memory and logic. However, symmetry breaking under a magnetic field is required to realize the deterministic switching in synthetic antiferromagnets with perpendicular magnetic anisotropy (PMA), which limits their potential applications. Herein, we report all electric-controlled magnetization switching in the antiferromagnetic Co/Ir/Co trilayers with vertical magnetic imbalance. Besides, the switching polarity could be reversed by optimizing the Ir thickness. By using the polarized neutron reflection (PNR) measurements, the canted noncollinear spin configuration was observed in Co/Ir/Co trilayers, which results from the competition of magnetic inhomogeneity. In addition, the asymmetric domain walls demonstrated by micromagnetic simulations result from introducing imbalance magnetism, leading to the deterministic magnetization switching in Co/Ir/Co trilayers. Our findings highlight a promising route to electric-controlled magnetism via tunable spin configuration, improve our understanding of physical mechanisms, and significantly promote industrial applications in spintronic devices.

Efficient Spin-Orbit Torque Switching in a Perpendicularly Magnetized Heusler Alloy MnPtGe Single Layer

Electrically manipulating magnetic moments by spin-orbit torque (SOT) has great potential applications in magnetic memories and logic devices. Although there have been rich SOT studies on magnetic heterostructures, low interfacial thermal stability and high switching current density still remain an issue. Here, highly textured, polycrystalline Heusler alloy Mn_xPt_yGe (MPG) films with various thicknesses are directly deposited onto thermally oxidized silicon wafers. The perpendicular magnetization of the MPG single layer can be reversibly switched by electrical current pulses with a magnitude as low as 4.1 × 10¹⁰Am^-2, as evidenced by both the electrical transport and the magnetic optical measurements. The switching is shown to arise from inversion symmetry breaking due to the vertical composition gradient of the films after sample annealing. The SOT effective fields of the samples are analyzed systematically. It is found that the SOT efficiency increases with the film thickness, suggesting a robust bulk-like behavior in the single magnetic layer. Furthermore, a memristive characteristic has been observed due to a multidomain switching property in the single-layer MPG device. Additionally, deterministic field-free switching of magnetization is observed when the electric current flows orthogonal to the direction of the in-plane compositional gradient due to the in-plane symmetry breaking. This work proves that the MPG is a good candidate to be utilized in high-density and efficient magnetoresistive random access memory devices and other spintronic applications.

Bulk Rashba-Type Spin Splitting in Non-Centrosymmetric Artificial Superlattices

Spin current, converted from charge current via spin Hall or Rashba effects, can transfer its angular momentum to local moments in a ferromagnetic layer. In this regard, the high charge-to-spin conversion efficiency is required for magnetization manipulation for developing future memory or logic devices including magnetic random-access memory. Here, the bulk Rashba-type charge-to-spin conversion is demonstrated in an artificial superlattice without centrosymmetry. The charge-to-spin conversion in [Pt/Co/W] superlattice with sub-nm scale thickness shows strong W thickness dependence. When the W thickness becomes 0.6 nm, the observed field-like torque efficiency is about 0.6, which is an order larger than other metallic heterostructures. First-principles calculation suggests that such large field-like torque arises from bulk-type Rashba effect due to the vertically broken inversion symmetry inherent from W layers. The result implies that the spin splitting in a band of such an ABC-type artificial SL can be an additional degree of freedom for the large charge-to-spin conversion.

Strong variation of spin-orbit torques with relative spin relaxation rates in ferrimagnets

Spin-orbit torques (SOTs) have been widely understood as an interfacial transfer of spin that is independent of the bulk properties of the magnetic layer. Here, we report that SOTs acting on ferrimagnetic FexTb1-x layers decrease and vanish upon approaching the magnetic compensation point because the rate of spin transfer to the magnetization becomes much slower than the rate of spin relaxation into the crystal lattice due to spin-orbit scattering. These results indicate that the relative rates of competing spin relaxation processes within magnetic layers play a critical role in determining the strength of SOTs, which provides a unified understanding for the diverse and even seemingly puzzling SOT phenomena in ferromagnetic and compensated systems. Our work indicates that spin-orbit scattering within the magnet should be minimized for efficient SOT devices. We also find that the interfacial spin-mixing conductance of interfaces of ferrimagnetic alloys (such as FexTb1-x) is as large as that of 3d ferromagnets and insensitive to the degree of magnetic compensation.

Large Spin Coherence Length and High Photovoltaic Efficiency of the Room Temperature Ferrimagnet Ca2 FeOsO6 by Strain Engineering

The influence of epitaxial strain on the electronic, magnetic, and optical properties of the distorted double perovskite Ca₂ FeOsO₆ is studied. These calculations show that the compound realizes a monoclinic structure with P2₁ /n space group from -6% to +6% strain. While it retains ferrimagnetic ordering with a net magnetic moment of 2 μ_B per formula unit at low strain, it undergoes transitions into E-antiferromagnetic and C-antiferromagnetic phases at -5% and +5% strain, respectively. It is shown that spin frustration reduces the critical temperature of the ferrimagnetic ordering from the mean field value of 600-350 K, in excellent agreement with the experimental value of 320 K. It is also shown that the critical temperature can be tuned efficiently through strain and that the spin coherence length surpasses that of Sr₂ FeMoO₆ under tensile strain. An indirect-to-direct bandgap transition is observed at +5% strain. Localization of the valence and conduction states on different transition metal sublattices enables efficient electron-hole separation upon photoexcitation. The calculated spectroscopic limited maximum efficiency of up to 33% points to excellent potential of Ca₂ FeOsO₆ in solar cell applications.

Setting of the magnetic structure of chiral kagome antiferromagnets by a seeded spin-orbit torque

The current-induced spin-orbit torque switching of ferromagnets has had huge impact in spintronics. However, short spin-diffusion lengths limit the thickness of switchable ferromagnetic layers, thereby limiting their thermal stability. Here, we report a previously unobserved seeded spin-orbit torque (SSOT) by which current can set the magnetic states of even thick layers of the chiral kagome antiferromagnet Mn₃Sn. The mechanism involves setting the orientation of the antiferromagnetic domains in a thin region at the interface with spin currents arising from an adjacent heavy metal while also heating the layer above its magnetic ordering temperature. This interface region seeds the resulting spin texture of the entire layer as it cools down and, thereby, overcomes the thickness limitation of conventional spin-orbit torques. SSOT switching in Mn₃Sn can be extended beyond chiral antiferromagnets to diverse magnetic systems and provides a path toward the development of highly efficient, high-speed, and thermally stable spintronic devices.

Interface morphology driven exchange interaction and magnetization reversal in a Gd/Co multilayer

Rare-earth (RE)/transition metal (TM) ferromagnetic heterostructures with competing interfacial coupling and Zeeman energy provide a rich ground to study different phase states as a function of magnetic field and temperature. The interface morphology as a knob in these RE/TM heterostructures provides an excellent opportunity to engineer the macroscopic magnetic response by tuning the interface dependent microscopic interactions between the layers. We have investigated the interface morphology driven structure and magnetic properties of a Gd/Co multilayer. The interface morphology of the multilayer was controlled by annealing the multilayer at a relatively low temperature of 573 K under vacuum conditions. Combining the different experimental techniques and a simple one-dimensional spin-based model calculation, we studied the detailed magnetic structure and magnetization reversal mechanism in this system across compensation temperature (T_comp), which suggested a strong interface dependent coupling in the system. We showed that changes in the interface morphology of the Gd/Co multilayer strongly influence the macroscopic magnetic properties of the system. The calculation also confirms the formation of a helical magnetic structure with a 2π domain wall in this system below T_comp. The experimental finding and the simulation of this technologically important system will help to understand the physics of all-optical switching and related applications.

Ferrimagnetic spintronics

Ferrimagnets composed of multiple and antiferromagnetically coupled magnetic elements have attracted much attention recently as a material platform for spintronics. They offer the combined advantages of both ferromagnets and antiferromagnets, namely the easy control and detection of their net magnetization by an external field, antiferromagnetic-like dynamics faster than ferromagnetic dynamics and the potential for high-density devices. This Review summarizes recent progress in ferrimagnetic spintronics, with particular attention to the most-promising functionalities of ferrimagnets, which include their spin transport, spin texture dynamics and all-optical switching.

Chiral-spin rotation of non-collinear antiferromagnet by spin-orbit torque

Electrical manipulation of magnetic materials by current-induced spin torque constitutes the basis of spintronics. Here, we show an unconventional response to spin-orbit torque of a non-collinear antiferromagnet Mn₃Sn, which has attracted attention owing to its large anomalous Hall effect despite a vanishingly small net magnetization. In epitaxial heavy-metal/Mn₃Sn heterostructures, we observe a characteristic fluctuation of the Hall resistance under the application of electric current. This observation is explained by a rotation of the chiral-spin structure of Mn₃Sn driven by spin-orbit torque. We find that the variation of the magnitude of anomalous Hall effect fluctuation with sample size correlates with the number of magnetic domains in the Mn₃Sn layer. In addition, the dependence of the critical current on Mn₃Sn layer thickness reveals that spin-orbit torque generated by small current densities, below 20 MA cm^-2, effectively acts on the chiral-spin structure even in Mn₃Sn layers that are thicker than 20 nm. The results provide additional pathways for electrical manipulation of magnetic materials.

Spin-Orbit Torque Switching of a High-Quality Perpendicularly Magnetized Ferrimagnetic Heusler Mn3Ge Film

Current-induced spin-orbit torque (SOT) switching of magnetization has attracted great interest due to its potential application in magnetic memory devices, which offer low-energy consumption and high-speed writing. However, most of the SOT studies on perpendicularly magnetized anisotropy (PMA) magnets have been limited to heterostructures with interfacial PMA and poor thermal stability. Here, we experimentally demonstrate a SOT magnetization switching for a ferrimagnetic D0₂₂-Mn₃Ge film with high bulk PMA and robust thermal stability factor under a critical current density of 6.6 × 10¹¹ A m^-2 through the spin Hall effect of an adjacent capping Pt and a buffer Cr layer. A large effective damping-like SOT efficiency of 2.37 mT/10¹⁰ A m^-2 is determined using harmonic measurements in the structure. The effect of the double-spin source layers and the negative-exchange interaction of the ferrimagnet may explain the large SOT efficiency and the manifested magnetization switching of Mn₃Ge. Our findings demonstrate that D0₂₂-Mn₃Ge is a promising candidate for application in high-density SOT magnetic random-access memory devices.

Gigantic Current Control of Coercive Field and Magnetic Memory Based on Nanometer-Thin Ferromagnetic van der Waals Fe3 GeTe2

Controlling magnetic states by a small current is essential for the next-generation of energy-efficient spintronic devices. However, it invariably requires considerable energy to change a magnetic ground state of intrinsically quantum nature governed by fundamental Hamiltonian, once stabilized below a phase-transition temperature. Here, it is reported that, surprisingly, an in-plane current can tune the magnetic state of the nanometer-thin van der Waals ferromagnet Fe₃ GeTe₂ from a hard magnetic state to a soft magnetic state. It is a direct demonstration of the current-induced substantial reduction of the coercive field. This surprising finding is possible because the in-plane current produces a highly unusual type of gigantic spin-orbit torque for Fe₃ GeTe₂ . In addition, a working model of a new nonvolatile magnetic memory based on the principle of the discovery in Fe₃ GeTe₂ , controlled by a tiny current, is further demonstrated. The findings open up a new window of exciting opportunities for magnetic van der Waals materials with potentially huge impact on the future development of spintronic and magnetic memory.

Prospect of Spin-Orbitronic Devices and Their Applications

Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory and logic devices at sub-nano second and sub-picojoule regimes. Importantly, spin-orbitronic devices are intrinsic of nonvolatility, anti-radiation, unlimited endurance, excellent stability, and CMOS compatibility, toward emerging applications, e.g., processing in-memory, neuromorphic computing, probabilistic computing, and 3D magnetic random access memory. Nevertheless, the cutting-edge SOT-based devices and application remain at a premature stage owing to the lack of scalable methodology on the field-free SOT switching. Moreover, spin-orbitronics poises as an interdisciplinary field to be driven by goals of both fundamental discoveries and application innovations, to open fascinating new paths for basic research and new line of technologies. In this perspective, the specific challenges and opportunities are summarized to exert momentum on both research and eventual applications of spin-orbitronic devices.

Current-Induced Spin-Orbit Torques for Spintronic Applications

Control of magnetization in magnetic nanostructures is essential for development of spintronic devices because it governs fundamental device characteristics such as energy consumption, areal density, and operation speed. In this respect, spin-orbit torque (SOT), which originates from the spin-orbit interaction, has been widely investigated due to its efficient manipulation of the magnetization using in-plane current. SOT spearheads novel spintronic applications including high-speed magnetic memories, reconfigurable logics, and neuromorphic computing. Herein, recent advances in SOT research, highlighting the considerable benefits and challenges of SOT-based spintronic devices, are reviewed. First, the materials and structural engineering that enhances SOT efficiency are discussed. Then major experimental results for field-free SOT switching of perpendicular magnetization are summarized, which includes the introduction of an internal effective magnetic field and the generation of a distinct spin current with out-of-plane spin polarization. Finally, advanced SOT functionalities are presented, focusing on the demonstration of reconfigurable and complementary operation in spin logic devices.

Influence of rare earth metal Ho on the interfacial Dzyaloshinskii-Moriya interaction and spin torque efficiency in Pt/Co/Ho multilayers

Owing to the large spin-orbit coupling and tunable magnetization, heavy rare-earth metals Gd and Tb have great effects on the enhancement of spin-orbit torque (SOT) and fast domain wall (DW) motion. However, the reports on the heavy rare-earth metal Ho with more 4f electrons in the research of spintronics are limited. In this work, we found that the interfacial Dzyaloshinskii-Moriya interaction (DMI) and SOT in Pt/Co/Ho multilayers can be strongly influenced by changing the thickness of the Ho (tHo) layer. At tHo = 2.4 nm, DMI exchange constant |D| and spin torque efficiency ξDL reach maximum values of 1.24 mJ m-2 and 0.137 respectively, which are comparable with those in other Pt/Co/nonmagnetic (NM) layer structures. Deterministic current-induced magnetization switching with a low critical current density of 106 A cm-2 can be realized when tHo is less than 5 nm. The Néel-type DW with left-handed chirality and positive sign D can be determined by observing the current-induced asymmetric DW motion. Our results are helpful to prompt the application of heavy rare-earth elements in the fields of the DMI, SOT and chiral DW dynamics.

Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes

Ever since the first observation of all-optical switching of magnetization in the ferrimagnetic alloy GdFeCo using femtosecond laser pulses, there has been significant interest in exploiting this process for data-recording applications. In particular, the ultrafast speed of the magnetic reversal can enable the writing speeds associated with magnetic memory devices to be potentially pushed towards THz frequencies. This work reports the development of perpendicular magnetic tunnel junctions incorporating a stack of Tb/Co nanolayers whose magnetization can be all-optically controlled via helicity-independent single-shot switching. Toggling of the magnetization of the Tb/Co electrode was achieved using either 60 femtosecond-long or 5 picosecond-long laser pulses, with incident fluences down to 3.5 mJ/cm2, for Co-rich compositions of the stack either in isolation or coupled to a CoFeB-electrode/MgO-barrier tunnel-junction stack. Successful switching of the CoFeB-[Tb/Co] electrodes was obtained even after annealing at 250 °C. After integration of the [Tb/Co]-based electrodes within perpendicular magnetic tunnel junctions yielded a maximum tunneling magnetoresistance signal of 41% and RxA value of 150 Ωμm2 with current-in-plane measurements and ratios between 28% and 38% in nanopatterned pillars. These results represent a breakthrough for the development of perpendicular magnetic tunnel junctions controllable using single laser pulses, and offer a technologically-viable path towards the realization of hybrid spintronic-photonic systems featuring THz switching speeds.