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Mawaddah FAN, Bisri SZ. Advancing Silver Bismuth Sulfide Quantum Dots for Practical Solar Cell Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:1328. [PMID: 39195366 DOI: 10.3390/nano14161328] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2024] [Revised: 07/26/2024] [Accepted: 07/28/2024] [Indexed: 08/29/2024]
Abstract
Colloidal quantum dots (CQDs) show unique properties that distinguish them from their bulk form, the so-called quantum confinement effects. This feature manifests in tunable size-dependent band gaps and discrete energy levels, resulting in distinct optical and electronic properties. The investigation direction of colloidal quantum dots (CQDs) materials has started switching from high-performing materials based on Pb and Cd, which raise concerns regarding their toxicity, to more environmentally friendly compounds, such as AgBiS2. After the first breakthrough in solar cell application in 2016, the development of AgBiS2 QDs has been relatively slow, and many of the fundamental physical and chemical properties of this material are still unknown. Investigating the growth of AgBiS2 QDs is essential to understanding the fundamental properties that can improve this material's performance. This review comprehensively summarizes the synthesis strategies, ligand choice, and solar cell fabrication of AgBiS2 QDs. The development of PbS QDs is also highlighted as the foundation for improving the quality and performance of AgBiS2 QD. Furthermore, we prospectively discuss the future direction of AgBiS2 QD and its use for solar cell applications.
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Affiliation(s)
- Fidya Azahro Nur Mawaddah
- Department of Applied Physics and Chemical Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei-shi 184-8588, Tokyo, Japan
| | - Satria Zulkarnaen Bisri
- Department of Applied Physics and Chemical Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei-shi 184-8588, Tokyo, Japan
- RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako 351-0198, Saitama, Japan
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2
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Wang B, Yuan M, Liu J, Zhang X, Liu J, Yang J, Gao L, Zhang J, Tang J, Lan X. Synergism in Binary Nanocrystals Enables Top-Illuminated HgTe Colloidal Quantum Dot Short-Wave Infrared Imager. NANO LETTERS 2024; 24:9583-9590. [PMID: 39041791 DOI: 10.1021/acs.nanolett.4c02235] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
Thanks to their tunable infrared absorption, solution processability, and low fabrication costs, HgTe colloidal quantum dots (CQDs) are promising for optoelectronic devices. Despite advancements in device design, their potential for imaging applications remains underexplored. For integration with Si-based readout integrated circuits (ROICs), top illumination is necessary for simultaneous light absorption and signal acquisition. However, most high-performing traditional HgTe CQD photodiodes are p-on-n stack and bottom-illuminated. Herein, we report top-illuminated inverted n-on-p HgTe CQD photodiodes using a robust p-type CQD layer and a thermally evaporated Bi2S3 electron transport layer. The p-type CQD solid is achieved by exploring the synergism in binary HgTe and Ag2Te CQDs. These photodetectors show a room-temperature detectivity of 3.4 × 1011 jones and an EQE of ∼44% at ∼1.7 μm wavelength, comparable to the p-on-n HgTe CQD photodiodes. A top-illuminated HgTe CQD short-wave infrared imager (640 × 512 pixels) was fabricated, demonstrating successful infrared imaging.
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Affiliation(s)
- Binbin Wang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Mohan Yuan
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Jing Liu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Xingchen Zhang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Jing Liu
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Ji Yang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- School of Integrated Circuit, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
| | - Jianbing Zhang
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- School of Integrated Circuit, Huazhong University of Science and Technology, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Jiang Tang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Xinzheng Lan
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
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3
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Yue L, Li J, Yao C, Chen J, Yan C, Wang X, Cao J. Nonequilibrium Lattice Dynamics of Individual and Attached PbSe Quantum Dots under Photoexcitation. J Phys Chem Lett 2024; 15:7667-7673. [PMID: 39037601 DOI: 10.1021/acs.jpclett.4c01541] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/23/2024]
Abstract
Quantum dot (QD) solids are emerging materials for many optoelectronic applications. To enhance interdot coupling and charge transport, surface ligands can be removed, allowing individual QDs to be attached along specific crystal orientations (termed "oriented attachment"). Optimizing the electronic and optical properties of QD solids demands a comprehensive understanding of the nanoscale energy flow in individual and attached QDs under photoexcitation. In this work, we employed ultrafast electron diffraction to directly measure how oriented attachment along ⟨100⟩ directions affects the nonequilibrium lattice dynamics of lead selenide QDs. The oriented attachment anisotropically alters the ultrafast energy relaxation along specific crystal axes. Along the ⟨100⟩ directions, both the lattice deformation and atomistic random motions are suppressed in comparison with those of individual QDs. Conversely, the effects are enhanced along the unattached ⟨111⟩ directions due to ligand removal. The oriented attachment switches the major lattice thermalization pathways from ⟨100⟩ to ⟨111⟩ directions.
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Affiliation(s)
- Luye Yue
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jingjun Li
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Changyuan Yao
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jie Chen
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Chang Yan
- Center for Ultrafast Science and Technology, School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- Zhangjiang Institute for Advanced Study, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xuan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Jianming Cao
- Center for Ultrafast Science and Technology, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Physics Department and National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310, United States
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4
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Fan K, Sergeeva KA, Sergeev AA, Zhang L, Chan CCS, Li Z, Zhong X, Kershaw SV, Liu J, Rogach AL, Wong KS. Slow Hot-Exciton Cooling and Enhanced Interparticle Excitonic Coupling in HgTe Quantum Dots. ACS NANO 2024; 18:18011-18021. [PMID: 38935537 DOI: 10.1021/acsnano.4c05061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2024]
Abstract
Rapid hot-carrier/exciton cooling constitutes a major loss channel for photovoltaic efficiency. How to decelerate the hot-carrier/exciton relaxation remains a crux for achieving high-performance photovoltaic devices. Here, we demonstrate slow hot-exciton cooling that can be extended to hundreds of picoseconds in colloidal HgTe quantum dots (QDs). The energy loss rate is 1 order of magnitude smaller than bulk inorganic semiconductors, mediated by phonon bottleneck and interband biexciton Auger recombination (BAR) effects, which are both augmented at reduced QD sizes. The two effects are competitive with the emergence of multiple exciton generation. Intriguingly, BAR dominates even under low excitation fluences with a decrease in interparticle distance. Both experimental evidence and numerical evidence reveal that such efficient BAR derives from the tunneling-mediated interparticle excitonic coupling induced by wave function overlap between neighboring HgTe QDs in films. Thus, our study unveils the potential for realizing efficient hot-carrier/exciton solar cells based on HgTe QDs. Fundamentally, we reveal that the delocalized nature of quantum-confined wave function intensifies BAR. The interparticle excitonic coupling may cast light on the development of next-generation photoelectronic materials, which can retain the size-tunable confinement of colloidal semiconductor QDs while simultaneously maintaining high mobilities and conductivities typical for bulk semiconductor materials.
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Affiliation(s)
- Kezhou Fan
- Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P. R. China
| | - Kseniia A Sergeeva
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., P. R. China
| | - Aleksandr A Sergeev
- Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P. R. China
- Far-Eastern Branch of Russian Academy of Sciences, Institute of Automation and Control Processes, Vladivostok 690041, Russia
| | - Lu Zhang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P. R. China
| | - Christopher C S Chan
- Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P. R. China
| | - Zhuo Li
- TRACE EM Unit and Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., P. R. China
- City University of Hong Kong Matter Science Research Institute (Futian, Shenzhen), Shenzhen 518048, P. R. China
- Nanomanufacturing Laboratory (NML), City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Xiaoyan Zhong
- TRACE EM Unit and Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., P. R. China
- City University of Hong Kong Matter Science Research Institute (Futian, Shenzhen), Shenzhen 518048, P. R. China
- Nanomanufacturing Laboratory (NML), City University of Hong Kong Shenzhen Research Institute, Shenzhen 518057, P. R. China
| | - Stephen V Kershaw
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., P. R. China
| | - Junwei Liu
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P. R. China
| | - Andrey L Rogach
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong S.A.R., P. R. China
| | - Kam Sing Wong
- Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong S.A.R., P. R. China
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5
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Yu M, Yang J, Zhang X, Yuan M, Zhang J, Gao L, Tang J, Lan X. In-Synthesis Se-Stabilization Enables Defect and Doping Engineering of HgTe Colloidal Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311830. [PMID: 38501495 DOI: 10.1002/adma.202311830] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2023] [Revised: 02/25/2024] [Indexed: 03/20/2024]
Abstract
Colloidal Quantum Dots (CQDs) of mercury telluride (HgTe) hold particular appeal for infrared photodetection due to their widely tunable infrared absorption and good compatibility with silicon electronics. While advances in surface chemistry have led to improved CQD solids, the chemical stability of HgTe material is not fully emphasized. In this study, it is aimed to address this issue and identifies a Se-stabilization strategy based on the surface coating of Se on HgTe CQDs via engineering in the precursor reactivity. The presence of Se-coating enables HgTe CQDs with improved colloidal stability, passivation, and enhanced degree of freedom in doping tuning. This enables the construction of optimized p-i-n HgTe CQD infrared photodetectors with an ultra-low dark current 3.26 × 10-6 A cm⁻2 at -0.4 V and room-temperature specific detectivity of 5.17 × 1011 Jones at wavelength ≈2 um, approximately one order of magnitude improvement compared to that of the control device. The stabilizing effect of Se is well preserved in the thin film state, contributing to much improved device stability. The in-synthesis Se-stabilization strategy highlights the importance of the chemical stability of materials for the construction of semiconductor-grade CQD solids and may have important implications for other high-performance CQD optoelectronic devices.
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Affiliation(s)
- Mengxuan Yu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Ji Yang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Xingchen Zhang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Mohan Yuan
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jianbing Zhang
- School of Integrated Circuit, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Yuexing Road, Shenzhen, 518057, P. R. China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Shenzhen Huazhong University of Science and Technology Research Institute, Yuexing Road, Shenzhen, 518057, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
| | - Jiang Tang
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
| | - Xinzheng Lan
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
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6
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Bassani CL, van Anders G, Banin U, Baranov D, Chen Q, Dijkstra M, Dimitriyev MS, Efrati E, Faraudo J, Gang O, Gaston N, Golestanian R, Guerrero-Garcia GI, Gruenwald M, Haji-Akbari A, Ibáñez M, Karg M, Kraus T, Lee B, Van Lehn RC, Macfarlane RJ, Mognetti BM, Nikoubashman A, Osat S, Prezhdo OV, Rotskoff GM, Saiz L, Shi AC, Skrabalak S, Smalyukh II, Tagliazucchi M, Talapin DV, Tkachenko AV, Tretiak S, Vaknin D, Widmer-Cooper A, Wong GCL, Ye X, Zhou S, Rabani E, Engel M, Travesset A. Nanocrystal Assemblies: Current Advances and Open Problems. ACS NANO 2024; 18:14791-14840. [PMID: 38814908 DOI: 10.1021/acsnano.3c10201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2024]
Abstract
We explore the potential of nanocrystals (a term used equivalently to nanoparticles) as building blocks for nanomaterials, and the current advances and open challenges for fundamental science developments and applications. Nanocrystal assemblies are inherently multiscale, and the generation of revolutionary material properties requires a precise understanding of the relationship between structure and function, the former being determined by classical effects and the latter often by quantum effects. With an emphasis on theory and computation, we discuss challenges that hamper current assembly strategies and to what extent nanocrystal assemblies represent thermodynamic equilibrium or kinetically trapped metastable states. We also examine dynamic effects and optimization of assembly protocols. Finally, we discuss promising material functions and examples of their realization with nanocrystal assemblies.
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Affiliation(s)
- Carlos L Bassani
- Institute for Multiscale Simulation, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Greg van Anders
- Department of Physics, Engineering Physics, and Astronomy, Queen's University, Kingston, Ontario K7L 3N6, Canada
| | - Uri Banin
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
| | - Dmitry Baranov
- Division of Chemical Physics, Department of Chemistry, Lund University, SE-221 00 Lund, Sweden
| | - Qian Chen
- University of Illinois, Urbana, Illinois 61801, USA
| | - Marjolein Dijkstra
- Soft Condensed Matter & Biophysics, Debye Institute for Nanomaterials Science, Utrecht University, 3584 CC Utrecht, The Netherlands
| | - Michael S Dimitriyev
- Department of Polymer Science and Engineering, University of Massachusetts, Amherst, Massachusetts 01003, USA
- Department of Materials Science and Engineering, Texas A&M University, College Station, Texas 77843, USA
| | - Efi Efrati
- Department of Physics of Complex Systems, Weizmann Institute of Science, Rehovot 76100, Israel
- James Franck Institute, The University of Chicago, Chicago, Illinois 60637, USA
| | - Jordi Faraudo
- Institut de Ciencia de Materials de Barcelona (ICMAB-CSIC), Campus de la UAB, E-08193 Bellaterra, Barcelona, Spain
| | - Oleg Gang
- Department of Chemical Engineering, Columbia University, New York, New York 10027, USA
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Nicola Gaston
- The MacDiarmid Institute for Advanced Materials and Nanotechnology, Department of Physics, The University of Auckland, Auckland 1142, New Zealand
| | - Ramin Golestanian
- Max Planck Institute for Dynamics and Self-Organization (MPI-DS), 37077 Göttingen, Germany
- Rudolf Peierls Centre for Theoretical Physics, University of Oxford, Oxford OX1 3PU, UK
| | - G Ivan Guerrero-Garcia
- Facultad de Ciencias de la Universidad Autónoma de San Luis Potosí, 78295 San Luis Potosí, México
| | - Michael Gruenwald
- Department of Chemistry, University of Utah, Salt Lake City, Utah 84112, USA
| | - Amir Haji-Akbari
- Department of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut 06511, USA
| | - Maria Ibáñez
- Institute of Science and Technology Austria (ISTA), 3400 Klosterneuburg, Austria
| | - Matthias Karg
- Heinrich-Heine-Universität Düsseldorf, 40225 Düsseldorf, Germany
| | - Tobias Kraus
- INM - Leibniz-Institute for New Materials, 66123 Saarbrücken, Germany
- Saarland University, Colloid and Interface Chemistry, 66123 Saarbrücken, Germany
| | - Byeongdu Lee
- X-ray Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
| | - Reid C Van Lehn
- Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53717, USA
| | - Robert J Macfarlane
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02142, USA
| | - Bortolo M Mognetti
- Center for Nonlinear Phenomena and Complex Systems, Université Libre de Bruxelles, 1050 Brussels, Belgium
| | - Arash Nikoubashman
- Leibniz-Institut für Polymerforschung Dresden e.V., 01069 Dresden, Germany
- Institut für Theoretische Physik, Technische Universität Dresden, 01069 Dresden, Germany
| | - Saeed Osat
- Max Planck Institute for Dynamics and Self-Organization (MPI-DS), 37077 Göttingen, Germany
| | - Oleg V Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, CA 90089, USA
- Department of Physics and Astronomy, University of Southern California, Los Angeles, California 90089, USA
| | - Grant M Rotskoff
- Department of Chemistry, Stanford University, Stanford, California 94305, USA
| | - Leonor Saiz
- Department of Biomedical Engineering, University of California, Davis, California 95616, USA
| | - An-Chang Shi
- Department of Physics & Astronomy, McMaster University, Hamilton, Ontario L8S 4M1, Canada
| | - Sara Skrabalak
- Department of Chemistry, Indiana University, Bloomington, Indiana 47405, USA
| | - Ivan I Smalyukh
- Department of Physics and Chemical Physics Program, University of Colorado, Boulder, Colorado 80309, USA
- International Institute for Sustainability with Knotted Chiral Meta Matter, Hiroshima University, Higashi-Hiroshima City 739-0046, Japan
| | - Mario Tagliazucchi
- Universidad de Buenos Aires, Ciudad Universitaria, C1428EHA Ciudad Autónoma de Buenos Aires, Buenos Aires 1428 Argentina
| | - Dmitri V Talapin
- Department of Chemistry, James Franck Institute and Pritzker School of Molecular Engineering, The University of Chicago, Chicago, Illinois 60637, USA
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439, USA
| | - Alexei V Tkachenko
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Sergei Tretiak
- Theoretical Division and Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
| | - David Vaknin
- Iowa State University and Ames Lab, Ames, Iowa 50011, USA
| | - Asaph Widmer-Cooper
- ARC Centre of Excellence in Exciton Science, School of Chemistry, University of Sydney, Sydney, New South Wales 2006, Australia
- The University of Sydney Nano Institute, University of Sydney, Sydney, New South Wales 2006, Australia
| | - Gerard C L Wong
- Department of Bioengineering, University of California, Los Angeles, California 90095, USA
- Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095, USA
- Department of Microbiology, Immunology & Molecular Genetics, University of California, Los Angeles, CA 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, CA 90095, USA
| | - Xingchen Ye
- Department of Chemistry, Indiana University, Bloomington, Indiana 47405, USA
| | - Shan Zhou
- Department of Nanoscience and Biomedical Engineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701, USA
| | - Eran Rabani
- Department of Chemistry, University of California and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- The Raymond and Beverly Sackler Center of Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 69978, Israel
| | - Michael Engel
- Institute for Multiscale Simulation, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | - Alex Travesset
- Iowa State University and Ames Lab, Ames, Iowa 50011, USA
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7
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Xue X, Hao Q, Chen M. Very long wave infrared quantum dot photodetector up to 18 μm. LIGHT, SCIENCE & APPLICATIONS 2024; 13:89. [PMID: 38609412 PMCID: PMC11014860 DOI: 10.1038/s41377-024-01436-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2023] [Revised: 03/15/2024] [Accepted: 03/20/2024] [Indexed: 04/14/2024]
Abstract
Colloidal quantum dots (CQDs) are of interest for optoelectronic devices because of the possibility of high-throughput solution processing and the wide energy gap tunability from ultraviolet to infrared wavelengths. People may question about the upper limit on the CQD wavelength region. To date, although the CQD absorption already reaches terahertz, the practical photodetection wavelength is limited within mid-wave infrared. To figure out challenges on CQD photoresponse in longer wavelength, would reveal the ultimate property on these nanomaterials. What's more, it motivates interest in bottom-up infrared photodetection with less than 10% cost compared with epitaxial growth semiconductor bulk. In this work, developing a re-growth method and ionic doping modification, we demonstrate photodetection up to 18 μm wavelength on HgTe CQD. At liquid nitrogen temperature, the responsivity reaches 0.3 A/W and 0.13 A/W, with specific detectivity 6.6 × 108 Jones and 2.3 × 109 Jones for 18 μm and 10 μm CQD photoconductors, respectively. This work is a step toward answering the general question on the CQD photodetection wavelength limitation.
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Affiliation(s)
- Xiaomeng Xue
- School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China
- Westlake Institute for Optoelectronics, Fuyang, Hangzhou, 311421, China
| | - Qun Hao
- School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China
- Physics Department, Changchun University of Science and Technology, Changchun, 130022, China
| | - Menglu Chen
- School of Optics and Photonics, Beijing Institute of Technology, Beijing, 100081, China.
- Westlake Institute for Optoelectronics, Fuyang, Hangzhou, 311421, China.
- Physics Department, Changchun University of Science and Technology, Changchun, 130022, China.
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8
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Sergeeva KA, Hu S, Sokolova AV, Portniagin AS, Chen D, Kershaw SV, Rogach AL. Obviating Ligand Exchange Preserves the Intact Surface of HgTe Colloidal Quantum Dots and Enhances Performance of Short Wavelength Infrared Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306518. [PMID: 37572367 DOI: 10.1002/adma.202306518] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Revised: 07/23/2023] [Indexed: 08/14/2023]
Abstract
A large volume, scalable synthesis procedure of HgTe quantum dots (QDs) capped initially with short-chain conductive ligands ensures ligand exchange-free and simple device fabrication. An effective n- or p-type self-doping of HgTe QDs is achieved by varying cation-anion ratio, as well as shifting the Fermi level position by introducing single- or double-cyclic thiol ligands, that is, 2-furanmethanethiol (FMT) or 2,5-dimercapto-3,4-thiadiasole (DMTD) in the synthesis. This allows for preserving the intact surface of the HgTe QDs, thus ensuring a one order of magnitude reduced surface trap density compared with HgTe subjected to solid-state ligand exchange. The charge carrier diffusion length can be extended from 50 to 90 nm when the device active area consists of a bi-layer of cation-rich HgTe QDs capped with DMTD and FMT, respectively. As a result, the responsivity under 1340 nm illumination is boosted to 1 AW-1 at zero bias and up to 40 AW-1 under -1 V bias at room temperature. Due to high noise current density, the specific detectivity of these photodetectors reaches up to 1010 Jones at room temperature and under an inert atmosphere. Meanwhile, high photoconductive gain ensures a rise in the external quantum efficiency of up to 1000% under reverse bias.
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Affiliation(s)
- Kseniia A Sergeeva
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Sile Hu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Anastasiia V Sokolova
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Arsenii S Portniagin
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Desui Chen
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Stephen V Kershaw
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Andrey L Rogach
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR, 999077, P. R. China
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9
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Sekh T, Cherniukh I, Kobiyama E, Sheehan TJ, Manoli A, Zhu C, Athanasiou M, Sergides M, Ortikova O, Rossell MD, Bertolotti F, Guagliardi A, Masciocchi N, Erni R, Othonos A, Itskos G, Tisdale WA, Stöferle T, Rainò G, Bodnarchuk MI, Kovalenko MV. All-Perovskite Multicomponent Nanocrystal Superlattices. ACS NANO 2024; 18:8423-8436. [PMID: 38446635 PMCID: PMC10958606 DOI: 10.1021/acsnano.3c13062] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Revised: 02/16/2024] [Accepted: 02/22/2024] [Indexed: 03/08/2024]
Abstract
Nanocrystal superlattices (NC SLs) have long been sought as promising metamaterials, with nanoscale-engineered properties arising from collective and synergistic effects among the constituent building blocks. Lead halide perovskite (LHP) NCs come across as outstanding candidates for SL design, as they demonstrate collective light emission, known as superfluorescence, in single- and multicomponent SLs. Thus far, LHP NCs have only been assembled in single-component SLs or coassembled with dielectric NC building blocks acting solely as spacers between luminescent NCs. Here, we report the formation of multicomponent LHP NC-only SLs, i.e., using only CsPbBr3 NCs of different sizes as building blocks. The structural diversity of the obtained SLs encompasses the ABO6, ABO3, and NaCl structure types, all of which contain orientationally and positionally locked NCs. For the selected model system, the ABO6-type SL, we observed efficient NC coupling and Förster-like energy transfer from strongly confined 5.3 nm CsPbBr3 NCs to weakly confined 17.6 nm CsPbBr3 NCs, along with characteristic superfluorescence features at cryogenic temperatures. Spatiotemporal exciton dynamics measurements reveal that binary SLs exhibit enhanced exciton diffusivity compared to single-component NC assemblies across the entire temperature range (from 5 to 298 K). The observed coherent and incoherent NC coupling and controllable excitonic transport within the solid NC SLs hold promise for applications in quantum optoelectronic devices.
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Affiliation(s)
- Taras
V. Sekh
- Institute
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, 8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa−Swiss
Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Ihor Cherniukh
- Institute
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, 8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa−Swiss
Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | | | - Thomas J. Sheehan
- Department
of Chemical Engineering, Massachusetts Institute
of Technology, Cambridge, Massachusetts 02139, United States
| | - Andreas Manoli
- Experimental
Condensed Matter Physics Laboratory, Department of Physics, University of Cyprus, 1678 Nicosia, Cyprus
| | - Chenglian Zhu
- Institute
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, 8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa−Swiss
Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Modestos Athanasiou
- Experimental
Condensed Matter Physics Laboratory, Department of Physics, University of Cyprus, 1678 Nicosia, Cyprus
| | - Marios Sergides
- Laboratory
of Ultrafast Science, Department of Physics, University of Cyprus, Nicosia 1678, Cyprus
| | - Oleksandra Ortikova
- Electron
Microscopy Center, Empa−Swiss Federal
Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Marta D. Rossell
- Electron
Microscopy Center, Empa−Swiss Federal
Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Federica Bertolotti
- Department
of Science and High Technology and To.Sca.Lab, University of Insubria, via Valleggio 11, 22100 Como, Italy
| | - Antonietta Guagliardi
- Istituto
di Cristallografia and To.Sca.Lab, Consiglio Nazionale delle Ricerche, via Valleggio 11, 22100 Como, Italy
| | - Norberto Masciocchi
- Department
of Science and High Technology and To.Sca.Lab, University of Insubria, via Valleggio 11, 22100 Como, Italy
| | - Rolf Erni
- Electron
Microscopy Center, Empa−Swiss Federal
Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland
| | - Andreas Othonos
- Laboratory
of Ultrafast Science, Department of Physics, University of Cyprus, Nicosia 1678, Cyprus
| | - Grigorios Itskos
- Experimental
Condensed Matter Physics Laboratory, Department of Physics, University of Cyprus, 1678 Nicosia, Cyprus
| | - William A. Tisdale
- Department
of Chemical Engineering, Massachusetts Institute
of Technology, Cambridge, Massachusetts 02139, United States
| | - Thilo Stöferle
- IBM
Research Europe−Zürich, Rüschlikon CH-8803, Switzerland
| | - Gabriele Rainò
- Institute
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, 8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa−Swiss
Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Maryna I. Bodnarchuk
- Institute
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, 8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa−Swiss
Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
| | - Maksym V. Kovalenko
- Institute
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, 8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa−Swiss
Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland
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10
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Huang X, Qin Y, Guo T, Liu J, Hu Z, Shang J, Li H, Deng G, Wu S, Chen Y, Lin T, Shen H, Ge J, Meng X, Wang X, Chu J, Wang J. Long-Range Hot-Carrier Transport in Topologically Connected HgTe Quantum Dots. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307396. [PMID: 38225755 DOI: 10.1002/advs.202307396] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2023] [Revised: 12/12/2023] [Indexed: 01/17/2024]
Abstract
The utilization of hot carriers as a means to surpass the Shockley-Queasier limit represents a promising strategy for advancing highly efficient photovoltaic devices. Quantum dots, owing to their discrete energy states and limited multi-phonon cooling process, are regarded as one of the most promising materials. However, in practical implementations, the presence of numerous defects and discontinuities in colloidal quantum dot (CQD) films significantly curtails the transport distance of hot carriers. In this study, the harnessing of excess energies from hot-carriers is successfully demonstrated and a world-record carrier diffusion length of 15 µm is observed for the first time in colloidal systems, surpassing existing hot-carrier materials by more than tenfold. The observed phenomenon is attributed to the specifically designed honeycomb-like topological structures in a HgTe CQD superlattice, with its long-range periodicity confirmed by High-Resolution Transmission Electron Microscopy(HR-TEM), Selected Area Electron Diffraction(SAED) patterns, and low-angle X-ray diffraction (XRD). In such a superlattice, nonlocal hot carrier transport is supported by three unique physical properties: the wavelength-independent responsivity, linear output characteristics and microsecond fast photoresponse. These findings underscore the potential of HgTe CQD superlattices as a feasible approach for efficient hot carrier collection, thereby paving the way for practical applications in highly sensitive photodetection and solar energy harvesting.
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Affiliation(s)
- Xinning Huang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing, 100049, China
| | - Yilu Qin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Tianle Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Jingjing Liu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Zhourui Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Hangzhou, 330106, China
| | - Jiale Shang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing, 100049, China
| | - Hongfu Li
- Kunming Institute of Physics, Kunming, Yunnan, 650223, China
| | - Gongrong Deng
- Kunming Institute of Physics, Kunming, Yunnan, 650223, China
| | - Shuaiqin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai, Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200438, China
| | - Yan Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai, Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200438, China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Jun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing, 100049, China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
| | - Junhao Chu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing, 100049, China
| | - Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19 A Yuquan Road, Beijing, 100049, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Hangzhou, 330106, China
- Frontier Institute of Chip and System, Institute of Optoelectronics, Shanghai, Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, 200438, China
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11
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Wang B, Hu H, Yuan M, Yang J, Liu J, Gao L, Zhang J, Tang J, Lan X. Short-Wave Infrared Detection and Imaging Employing Size-Customized HgTe Nanocrystals. SMALL METHODS 2024:e2301557. [PMID: 38381091 DOI: 10.1002/smtd.202301557] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Revised: 01/04/2024] [Indexed: 02/22/2024]
Abstract
HgTe nanocrystals (NCs) possess advantages including tunable infrared absorption spectra, solution processability, and low fabrication costs, offering new avenues for the advancement of next-generation infrared detectors. In spite of great synthetic advances, it remains essential to achieve customized synthesis of HgTe NCs in terms of industrial applications. Herein, by taking advantage of a high critical nucleation concentration of HgTe NCs, a continuous-dropwise (CD) synthetic approach that features the addition of the anion precursors in a feasible drop-by-drop fashion is demonstrated. The slow reaction dynamics enable size-customized synthesis of HgTe NCs with sharp band tails and wide absorption range fully covering the short- and mid-infrared regions. More importantly, the intrinsic advantages of CD process ensure high-uniformity and scale-up synthesis from batch to batch without compromising the excitonic features. The resultant HgTe nanocrystal photodetectors show a high room-temperature detectivity of 8.1 × 1011 Jones at 1.7 µm cutoff absorption edge. This CD approach verifies a robust method for controlled synthesis of HgTe NCs and might have important implications for scale-up synthesis of other nanocrystal materials.
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Affiliation(s)
- Binbin Wang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Huicheng Hu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Mohan Yuan
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Ji Yang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Jing Liu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
| | - Liang Gao
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
| | - Jianbing Zhang
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
- School of Integrated Circuit, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, P. R. China
| | - Jiang Tang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
| | - Xinzheng Lan
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei, 430074, P. R. China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, 325035, P. R. China
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12
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Saruyama M, Takahata R, Sato R, Matsumoto K, Zhu L, Nakanishi Y, Shibata M, Nakatani T, Fujinami S, Miyazaki T, Takenaka M, Teranishi T. Pseudomorphic amorphization of three-dimensional superlattices through morphological transformation of nanocrystal building blocks. Chem Sci 2024; 15:2425-2432. [PMID: 38362422 PMCID: PMC10866345 DOI: 10.1039/d3sc05085h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Accepted: 01/04/2024] [Indexed: 02/17/2024] Open
Abstract
Nanocrystal (NC) superlattices (SLs) have been widely studied as a new class of functional mesoscopic materials with collective physical properties. The arrangement of NCs in SLs governs the collective properties of SLs, and thus investigations of phenomena that can change the assembly of NC constituents are important. In this study, we investigated the dynamic evolution of NC arrangements in three-dimensional (3D) SLs, specifically the morphological transformation of NC constituents during the direct liquid-phase synthesis of 3D NC SLs. Electron microscopy and synchrotron-based in situ small angle X-ray scattering experiments revealed that the transformation of spherical Cu2S NCs in face-centred-cubic 3D NC SLs into anisotropic disk-shaped NCs collapsed the original ordered close-packed structure. The random crystallographic orientation of spherical Cu2S NCs in starting SLs also contributed to the complete disordering of the NC array via random-direction anisotropic growth of NCs. This work demonstrates that an understanding of the anisotropic growth kinetics of NCs in the post-synthesis modulation of NC SLs is important for tuning NC array structures.
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Affiliation(s)
- Masaki Saruyama
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Ryo Takahata
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Ryota Sato
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Kenshi Matsumoto
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Lingkai Zhu
- Graduate School of Science, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Yohei Nakanishi
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Motoki Shibata
- Office of Society-Academia Collaboration for Innovation, Kyoto University Yoshida-Honmachi Kyoto 606-8501 Japan
- Office of Society-Academia Collaboration for Innovation, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Tomotaka Nakatani
- Office of Society-Academia Collaboration for Innovation, Kyoto University Yoshida-Honmachi Kyoto 606-8501 Japan
- Office of Society-Academia Collaboration for Innovation, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - So Fujinami
- Office of Society-Academia Collaboration for Innovation, Kyoto University Yoshida-Honmachi Kyoto 606-8501 Japan
- Office of Society-Academia Collaboration for Innovation, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Tsukasa Miyazaki
- Office of Society-Academia Collaboration for Innovation, Kyoto University Yoshida-Honmachi Kyoto 606-8501 Japan
- Office of Society-Academia Collaboration for Innovation, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Mikihito Takenaka
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
| | - Toshiharu Teranishi
- Institute for Chemical Research, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
- Graduate School of Science, Kyoto University Gokasho, Uji Kyoto 611-0011 Japan
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13
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Kim J, Lee Y, Nguyen VL, Thu Huong CT, Kim D, Cho K, Sung MM. Self-Organized Phase-Composite Nanocrystal Solids with Superior Charge Transport. ACS APPLIED MATERIALS & INTERFACES 2023; 15:53835-53846. [PMID: 37939291 DOI: 10.1021/acsami.3c12282] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
Interparticle electronic coupling is essential for self-assembled colloidal nanocrystal (NC) solid semiconductors to fulfill their wide-tunable electrical and optoelectrical properties, but it has been limited by disorders. Here, a disorder-tolerant coupling approach is presented by synthesizing self-organized NC solids based on amorphous/nanocrystalline phase-composites. The ZnO amorphous matrix, which infills the space between the less regularly ordered ZnO NCs, enables robust electronic coupling between neighboring NCs via the resonant wave function overlap, leading to a disorder-tolerant resonant conducting state. Field-effect transistors based on phase-composite semiconductors show delocalized band-like transport with superior field-effect mobility values (∼75 cm2 V-1 s-1), compared to amorphous or polycrystalline ZnO semiconductors. Furthermore, the broad amorphous matrix can mitigate interfacial defects between crystalline regions through atomic relaxation, in contrast to narrow grain boundaries in polycrystalline films, resulting in a significantly low interface trap density for phase-composite NC solids. Density function theory calculations and quantum transport simulations using the nonequilibrium Green's function formalism elucidate the origins of superior and highly disorder-tolerant electron transport in phase-composite NC solids. Our report introduces a new class of NC solids complementary to the colloidal counterpart and will be applicable to CMOS-compatible emerging device technologies.
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Affiliation(s)
- Jongchan Kim
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Yeonghun Lee
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States
- Department of Electronics Engineering, Incheon National University, Incheon 22012, Republic of Korea
| | - Van Long Nguyen
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Chu Thi Thu Huong
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Dongwook Kim
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Kyeongjae Cho
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Myung Mo Sung
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
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14
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Shibata K, Yoshida M, Hirakawa K, Otsuka T, Bisri SZ, Iwasa Y. Single PbS colloidal quantum dot transistors. Nat Commun 2023; 14:7486. [PMID: 37980351 PMCID: PMC10657373 DOI: 10.1038/s41467-023-43343-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/01/2023] [Accepted: 11/07/2023] [Indexed: 11/20/2023] Open
Abstract
Colloidal quantum dots are sub-10 nm semiconductors treated with liquid processes, rendering them attractive candidates for single-electron transistors operating at high temperatures. However, there have been few reports on single-electron transistors using colloidal quantum dots due to the difficulty in fabrication. In this work, we fabricated single-electron transistors using single oleic acid-capped PbS quantum dot coupled to nanogap metal electrodes and measured single-electron tunneling. We observed dot size-dependent carrier transport, orbital-dependent electron charging energy and conductance, electric field modulation of the electron confinement potential, and the Kondo effect, which provide nanoscopic insights into carrier transport through single colloidal quantum dots. Moreover, the large charging energy in small quantum dots enables single-electron transistor operation even at room temperature. These findings, as well as the commercial availability and high stability, make PbS quantum dots promising for the development of quantum information and optoelectronic devices, particularly room-temperature single-electron transistors with excellent optical properties.
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Affiliation(s)
- Kenji Shibata
- Department of Electrical and Electronic Engineering, Tohoku Institute of Technology, 35-1 Yagiyama, Kasumi-cho, Taihaku-ku, Sendai, 982-8577, Japan.
| | - Masaki Yoshida
- Department of Electrical and Electronic Engineering, Tohoku Institute of Technology, 35-1 Yagiyama, Kasumi-cho, Taihaku-ku, Sendai, 982-8577, Japan
| | - Kazuhiko Hirakawa
- Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan
- Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan
| | - Tomohiro Otsuka
- Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
- Department of Electronic Engineering, Tohoku University, Aoba 6-6-05, Aramaki, Aoba-Ku, Sendai, 980-8579, Japan
- Center for Science and Innovation in Spintronics, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, 980-8577, Japan
- Quantum Functional System Research Group, RIKEN Center for Emergent Matter Science, 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Satria Zulkarnaen Bisri
- Emergent Device Research Team, RIKEN Center for Emergent Matter Science, 2-1 Hirosawa Wako, Saitama, 351-0198, Japan
- Department of Applied Physics and Chemical Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei-shi, Tokyo, 184-8588, Japan
| | - Yoshihiro Iwasa
- Emergent Device Research Team, RIKEN Center for Emergent Matter Science, 2-1 Hirosawa Wako, Saitama, 351-0198, Japan
- Department of Applied Physics and Quantum-Phase Electronics Center, University of Tokyo, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
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15
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Li S, Hu F, Bi Y, Yang H, Lv B, Zhang C, Zhang J, Xiao M, Wang X. Micrometer-Scale Carrier Transport in the Solid Film of Giant CdSe/CdS Nanocrystals Imaged by Transient Absorption Microscopy. NANO LETTERS 2023; 23:9887-9893. [PMID: 37870769 DOI: 10.1021/acs.nanolett.3c02788] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/24/2023]
Abstract
For the practical applications in solar cells and photodetectors, semiconductor colloidal nanocrystals (NCs) are assembled into a high-concentration film with carrier transport characteristics, the full understanding and effective control of which are critical for the achievement of high light-to-electricity conversion efficiencies. Here we have applied transient absorption microscopy to the solid film of giant CdSe/CdS NCs and discovered that at high pump fluences the carrier transport could reach a long distance of ∼2 μm within ∼30 ps after laser pulse excitation. This intriguing behavior is attributed to the metal-insulator transition and the associated bandlike transport, which are promoted by the enhanced electronic coupling among neighboring NCs with extended wave functions overlap of the excited-state charge carriers. Besides providing fundamental transport information in the regime of high laser pump fluences, the above findings shed light on the rational design of high-power light detecting schemes based on colloidal NCs.
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Affiliation(s)
- Si Li
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Fengrui Hu
- College of Engineering and Applied Sciences, and MOE Key Laboratory of Intelligent Optical Sensing and Manipulation, Nanjing University, Nanjing 210093, China
| | - Yanfeng Bi
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Hongyu Yang
- Advanced Photonic Center, Southeast University, Nanjing 210096, China
| | - Bihu Lv
- Department of Scientific Facilities Development and Management, Zhejiang Lab, Hangzhou 311121, China
| | - Chunfeng Zhang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jiayu Zhang
- Advanced Photonic Center, Southeast University, Nanjing 210096, China
| | - Min Xiao
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, United States
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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16
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Dang TH, Cavallo M, Khalili A, Dabard C, Bossavit E, Zhang H, Ledos N, Prado Y, Lafosse X, Abadie C, Gacemi D, Ithurria S, Vincent G, Todorov Y, Sirtori C, Vasanelli A, Lhuillier E. Multiresonant Grating to Replace Transparent Conductive Oxide Electrode for Bias Selected Filtering of Infrared Photoresponse. NANO LETTERS 2023; 23:8539-8546. [PMID: 37712683 DOI: 10.1021/acs.nanolett.3c02306] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/16/2023]
Abstract
Optoelectronic devices rely on conductive layers as electrodes, but they usually introduce optical losses that are detrimental to the device performances. While the use of transparent conductive oxides is established in the visible region, these materials show high losses at longer wavelengths. Here, we demonstrate a photodiode based on a metallic grating acting as an electrode. The grating generates a multiresonant photonic structure over the diode stack and allows strong broadband absorption. The obtained device achieves the highest performances reported so far for a midwave infrared nanocrystal-based detector, with external quantum efficiency above 90%, detectivity of 7 × 1011 Jones at 80 K at 5 μm, and a sub-100 ns time response. Furthermore, we demonstrate that combining different gratings with a single diode stack can generate a bias reconfigurable response and develop new functionalities such as band rejection.
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Affiliation(s)
- Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Corentin Dabard
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Nicolas Ledos
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Xavier Lafosse
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
| | - Djamal Gacemi
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI, PSL Research University, Sorbonne Université, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Grégory Vincent
- DOTA, ONERA, Université Paris Saclay, 6 Chem. de la Vauve aux Granges, 91120 Palaiseau, France
| | - Yanko Todorov
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Carlo Sirtori
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Angela Vasanelli
- Laboratoire de Physique de l'Ecole Normale Supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris Cité, 24 Rue Lhomond, 75005 Paris, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, 4 place Jussieu, 75005 Paris, France
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17
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Thrupthika T, Nataraj D, Ramya S, Sangeetha A, Thangadurai TD. Induced UV photon sensing properties in narrow bandgap CdTe quantum dots through controlling hot electron dynamics. Phys Chem Chem Phys 2023; 25:25331-25343. [PMID: 37702661 DOI: 10.1039/d3cp02424e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/14/2023]
Abstract
Mn-doped CdTe (Mn-CdTe) quantum dot (QD) as well as quantum dot solid (QD solid) nanostructures are formed and the established structures are confirmed through HR-TEM analysis. The dynamics of charge carriers in both doped & undoped QD and QD solid structures were investigated by transient absorption (TA) spectroscopy. A slow band edge bleach recovery is obtained for Mn-doped CdTe QD and CdTe QD solid systems at room temperature. Additionally, a blue shifted broad bleach behaviour is identified for the Mn-CdTe QD solid system, which is attributed to hot exciton formation in the solid upon photoexcitation with a higher photon energy than the band gap energy (hν > Eg). This noteworthy process of generation of hot excitons and slow charge recombination occurs by means of a synergetic action of the Mn dopant in the host CdTe QD solid system as well as the extended electronic wave function between the coupled QD solid. Apart from the Mn-assisted delayed relaxation of hot electrons in the QD solid, a suppression in dark current as well as a high ION/IOFF ratio of 3203.12 at 1 V is observed in the Mn-CdTe QD-solid based photosensitized device in the visible region. Furthermore, we were able to improve the UV photon harvesting property in a narrow band gap Mn-CdTe QD solid through reducing the higher excited carrier's energy losses.
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Affiliation(s)
- Thankappan Thrupthika
- Quantum Materials & Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu 641 046, India.
| | - Devaraj Nataraj
- Quantum Materials & Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu 641 046, India.
- UGC-CPEPA Centre for Advanced Studies in Physics for the Development of Solar Energy Materials and Devices, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu, 641 046, India
| | - Subramaniam Ramya
- Quantum Materials & Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu 641 046, India.
| | - Arumugam Sangeetha
- Quantum Materials & Devices Laboratory, Department of Physics, Bharathiar University, Coimbatore, Tamil Nadu 641 046, India.
| | - T Daniel Thangadurai
- KPR Institute of Engineering and Technology, Coimbatore, Tamil Nadu, 641 407, India.
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18
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Al Mahfuz MM, Park J, Islam R, Ko DK. Colloidal Ag 2Se intraband quantum dots. Chem Commun (Camb) 2023; 59:10722-10736. [PMID: 37606169 DOI: 10.1039/d3cc02203j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/23/2023]
Abstract
With the emergence of the Internet of Things, wearable electronics, and machine vision, the exponentially growing demands for miniaturization, energy efficiency, and cost-effectiveness have imposed critical requirements on the size, weight, power consumption and cost (SWaP-C) of infrared detectors. To meet this demand, new sensor technologies that can reduce the fabrication cost associated with semiconductor epitaxy and remove the stringent requirement for cryogenic cooling are under active investigation. In the technologically important spectral region of mid-wavelength infrared, intraband colloidal quantum dots are currently at the forefront of this endeavor, with wafer-scale monolithic integration and Auger suppression being the key material capabilities to minimize the sensor's SWaP-C. In this Feature Article, we provide a focused review on the development of sensors based on Ag2Se intraband colloidal quantum dots, a heavy metal-free colloidal nanomaterial that has merits for wide-scale adoption in consumer and industrial sectors.
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Affiliation(s)
- Mohammad Mostafa Al Mahfuz
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA.
| | - Junsung Park
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA.
| | - Rakina Islam
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA.
| | - Dong-Kyun Ko
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, USA.
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19
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Xia K, Fei GT, Xu SH, Gao XD, Liang YF. Hot-Injection Synthesis of HgTe Nanoparticles: Shape Control and Growth Mechanisms. Inorg Chem 2023; 62:13632-13638. [PMID: 37552842 DOI: 10.1021/acs.inorgchem.3c02030] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/10/2023]
Abstract
Understanding the growth mechanisms of HgTe nanoparticles (NPs) with varied shapes is crucial for their applications in infrared photodetection. Here, we investigated the growth mechanisms of HgTe NPs with nanorod, sphere, and tetrahedral shapes in depth. The HgTe NPs with a nanorod shape are obtained at low reaction temperatures and formed by breaking tetrapod branches, while HgTe NPs with sphere and tetrahedron shapes have been further achieved at increased reaction temperatures. The systematic crystal analyses demonstrate this effective shape control is related to the synergic effect among the anisotropic passivation of oleylamine, surface free energy, and reaction temperatures. Our findings have deepened the understanding of shape control of the HgTe NPs and inspired a growing passion in the design and engineering of infrared photodetectors using HgTe NPs.
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Affiliation(s)
- Kai Xia
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P. R. China
- University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Guang Tao Fei
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P. R. China
| | - Shao Hui Xu
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P. R. China
| | - Xu Dong Gao
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P. R. China
| | - Yi Fei Liang
- Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, Anhui 230031, P. R. China
- University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
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20
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Septianto RD, Miranti R, Kikitsu T, Hikima T, Hashizume D, Matsushita N, Iwasa Y, Bisri SZ. Enabling metallic behaviour in two-dimensional superlattice of semiconductor colloidal quantum dots. Nat Commun 2023; 14:2670. [PMID: 37236922 DOI: 10.1038/s41467-023-38216-y] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2022] [Accepted: 04/21/2023] [Indexed: 05/28/2023] Open
Abstract
Semiconducting colloidal quantum dots and their assemblies exhibit superior optical properties owing to the quantum confinement effect. Thus, they are attracting tremendous interest from fundamental research to commercial applications. However, the electrical conducting properties remain detrimental predominantly due to the orientational disorder of quantum dots in the assembly. Here we report high conductivity and the consequent metallic behaviour of semiconducting colloidal quantum dots of lead sulphide. Precise facet orientation control to forming highly-ordered quasi-2-dimensional epitaxially-connected quantum dot superlattices is vital for high conductivity. The intrinsically high mobility over 10 cm2 V-1 s-1 and temperature-independent behaviour proved the high potential of semiconductor quantum dots for electrical conducting properties. Furthermore, the continuously tunable subband filling will enable quantum dot superlattices to be a future platform for emerging physical properties investigations, such as strongly correlated and topological states, as demonstrated in the moiré superlattices of twisted bilayer graphene.
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Affiliation(s)
- Ricky Dwi Septianto
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
- Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo, 152-8550, Japan
| | - Retno Miranti
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Tomoka Kikitsu
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Takaaki Hikima
- RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo, Hyogo, 679-5198, Japan
| | - Daisuke Hashizume
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
| | - Nobuhiro Matsushita
- Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo, 152-8550, Japan
| | - Yoshihiro Iwasa
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan
- Quantum Phase Electronic Center (QPEC) and Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Satria Zulkarnaen Bisri
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama, 351-0198, Japan.
- Department of Materials Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo, 152-8550, Japan.
- Department of Applied Physics and Chemical Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo, 184-8588, Japan.
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21
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Marino E, Rosen DJ, Yang S, Tsai EHR, Murray CB. Temperature-Controlled Reversible Formation and Phase Transformation of 3D Nanocrystal Superlattices Through In Situ Small-Angle X-ray Scattering. NANO LETTERS 2023; 23:4250-4257. [PMID: 37184728 DOI: 10.1021/acs.nanolett.3c00299] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
For decades, the spontaneous organization of nanocrystals into superlattices has captivated the scientific community. However, achieving direct control over the formation of the superlattice and its phase transformations has proven to be a grand challenge, often resulting in the generation of multiple symmetries under the same experimental conditions. Here, we achieve direct control over the formation of the superlattice and its phase transformations by modulating the thermal energy of a nanocrystal dispersion without relying on solvent evaporation. We follow the temperature-dependent dynamics of the self-assembly process using synchrotron-based small-angle X-ray scattering. When cooled below -24.5 °C, lead sulfide nanocrystals form micrometer-sized three-dimensional phase-pure body-centered cubic superlattices. When cooled below -35.1 °C, these superlattices undergo a collective diffusionless phase transformation that yields denser body-centered tetragonal phases. These structural changes can be reversed by increasing the temperature of the dispersion and may lead to the direct modulation of the optical properties of these artificial solids.
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Affiliation(s)
- Emanuele Marino
- Department of Chemistry, University of Pennsylvania, 231 S. 34th Street, Philadelphia, Pennslvania 19104 United States
- Dipartimento di Fisica e Chimica, Università degli Studi di Palermo, Via Archirafi 36, 90123 Palermo, Italy
| | - Daniel J Rosen
- Department of Materials Science and Engineering, University of Pennsylvania, 3231 Walnut Street, Philadelphia, Pennsylvania 19104 United States
| | - Shengsong Yang
- Department of Chemistry, University of Pennsylvania, 231 S. 34th Street, Philadelphia, Pennslvania 19104 United States
| | - Esther H R Tsai
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Building 735, Upton, New York 11973-5000, United States
| | - Christopher B Murray
- Department of Chemistry, University of Pennsylvania, 231 S. 34th Street, Philadelphia, Pennslvania 19104 United States
- Department of Materials Science and Engineering, University of Pennsylvania, 3231 Walnut Street, Philadelphia, Pennsylvania 19104 United States
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22
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Tian Y, Luo H, Chen M, Li C, Kershaw SV, Zhang R, Rogach AL. Mercury chalcogenide colloidal quantum dots for infrared photodetection: from synthesis to device applications. NANOSCALE 2023; 15:6476-6504. [PMID: 36960839 DOI: 10.1039/d2nr07309a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Commercial infrared (IR) photodetectors based on epitaxial growth inorganic semiconductors, e.g. InGaAs and HgCdTe, suffer from high fabrication cost, poor compatibility with silicon integrated circuits, rigid substrates and bulky cooling systems, which leaves a large development window for the emerging solution-processable semiconductor-based photo-sensing devices. Among the solution-processable semiconductors, mercury (Hg) chalcogenide colloidal quantum dots (QDs) exhibit unique ultra-broad and tuneable photo-responses in the short-wave infrared to far-wave infrared range, and have demonstrated photo-sensing abilities comparable to the commercial products, especially with advances in high operation temperature. Here, we provide a focused review on photodetectors employing Hg chalcogenide colloidal QDs, with a comprehensive summary of the essential progress in the areas of synthesis methods of QDs, property control, device engineering, focus plane array integration, etc. Besides imaging demonstrations, a series of Hg chalcogenide QD photodetector based flexible, integrated, multi-functional applications are also summarized. This review shows prospects for the next-generation low-cost highly-sensitive and compact IR photodetectors based on solution-processable Hg chalcogenide colloidal QDs.
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Affiliation(s)
- Yuanyuan Tian
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China.
| | - Hongqiang Luo
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China.
| | - Mengyu Chen
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China.
- Future Display Institute of Xiamen, Xiamen 361005, P. R. China
| | - Cheng Li
- School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, P. R. China.
- Future Display Institute of Xiamen, Xiamen 361005, P. R. China
| | - Stephen V Kershaw
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, Kowloon, Hong Kong SAR 999077, P. R. China.
| | - Rong Zhang
- Future Display Institute of Xiamen, Xiamen 361005, P. R. China
- Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, Department of Physics, Xiamen University, Xiamen 361005, P. R. China
- Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education, Xiamen University, Xiamen 361005, P. R. China
| | - Andrey L Rogach
- Department of Materials Science and Engineering and Centre for Functional Photonics (CFP), City University of Hong Kong, Kowloon, Hong Kong SAR 999077, P. R. China.
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23
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Pierini S, Abadie C, Dang TH, Khalili A, Zhang H, Cavallo M, Prado Y, Gallas B, Ithurria S, Sauvage S, Dayen JF, Vincent G, Lhuillier E. Lithium-Ion Glass Gating of HgTe Nanocrystal Film with Designed Light-Matter Coupling. MATERIALS (BASEL, SWITZERLAND) 2023; 16:2335. [PMID: 36984214 PMCID: PMC10054404 DOI: 10.3390/ma16062335] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Revised: 03/01/2023] [Accepted: 03/08/2023] [Indexed: 06/18/2023]
Abstract
Nanocrystals' (NCs) band gap can be easily tuned over the infrared range, making them appealing for the design of cost-effective sensors. Though their growth has reached a high level of maturity, their doping remains a poorly controlled parameter, raising the need for post-synthesis tuning strategies. As a result, phototransistor device geometry offers an interesting alternative to photoconductors, allowing carrier density control. Phototransistors based on NCs that target integrated infrared sensing have to (i) be compatible with low-temperature operation, (ii) avoid liquid handling, and (iii) enable large carrier density tuning. These constraints drive the search for innovative gate technologies beyond traditional dielectric or conventional liquid and ion gel electrolytes. Here, we explore lithium-ion glass gating and apply it to channels made of HgTe narrow band gap NCs. We demonstrate that this all-solid gate strategy is compatible with large capacitance up to 2 µF·cm-2 and can be operated over a broad range of temperatures (130-300 K). Finally, we tackle an issue often faced by NC-based phototransistors:their low absorption; from a metallic grating structure, we combined two resonances and achieved high responsivity (10 A·W-1 or an external quantum efficiency of 500%) over a broadband spectral range.
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Affiliation(s)
- Stefano Pierini
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
- ONERA-The French Aerospace Lab, 6 Chemin de la Vauve aux Granges, 91123 Palaiseau, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Bruno Gallas
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d’Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université, CNRS, 10 Rue Vauquelin, 75005 Paris, France
| | - Sébastien Sauvage
- CNRS, Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, 91120 Palaiseau, France
| | - Jean Francois Dayen
- IPCMS-CNRS, Université de Strasbourg, 23 Rue du Loess, 67034 Strasbourg, France
- Institut Universitaire de France, 1 Rue Descartes, CEDEX 05, 75231 Paris, France
| | - Grégory Vincent
- ONERA-The French Aerospace Lab, 6 Chemin de la Vauve aux Granges, 91123 Palaiseau, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
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24
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Khalili A, Cavallo M, Dang TH, Dabard C, Zhang H, Bossavit E, Abadie C, Prado Y, Xu XZ, Ithurria S, Vincent G, Coinon C, Desplanque L, Lhuillier E. Mid-wave infrared sensitized InGaAs using intraband transition in doped colloidal II-VI nanocrystals. J Chem Phys 2023; 158:094702. [PMID: 36889960 DOI: 10.1063/5.0141328] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/05/2023] Open
Abstract
Narrow bandgap nanocrystals (NCs) are now used as infrared light absorbers, making them competitors to epitaxially grown semiconductors. However, these two types of materials could benefit from one another. While bulk materials are more effective in transporting carriers and give a high degree of doping tunability, NCs offer a larger spectral tunability without lattice-matching constraints. Here, we investigate the potential of sensitizing InGaAs in the mid-wave infrared throughout the intraband transition of self-doped HgSe NCs. Our device geometry enables the design of a photodiode remaining mostly unreported for intraband-absorbing NCs. Finally, this strategy allows for more effective cooling and preserves the detectivity above 108 Jones up to 200 K, making it closer to cryo-free operation for mid-infrared NC-based sensors.
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Affiliation(s)
- Adrien Khalili
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Corentin Dabard
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Huichen Zhang
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Yoann Prado
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Grégory Vincent
- ONERA-The French Aerospace Lab, 6, chemin de la Vauve aux Granges, BP 80100, 91123 Palaiseau, France
| | - Christophe Coinon
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Ludovic Desplanque
- Univ. Lille, CNRS, Centrale Lille, Univ. Polytechnique Hauts-de-France, Junia-ISEN, UMR 8520-IEMN, F-59000 Lille, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS-UMR 7588, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
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25
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Cavallo M, Bossavit E, Zhang H, Dabard C, Dang TH, Khalili A, Abadie C, Alchaar R, Mastrippolito D, Prado Y, Becerra L, Rosticher M, Silly MG, Utterback JK, Ithurria S, Avila J, Pierucci D, Lhuillier E. Mapping the Energy Landscape from a Nanocrystal-Based Field Effect Transistor under Operation Using Nanobeam Photoemission Spectroscopy. NANO LETTERS 2023; 23:1363-1370. [PMID: 36692377 DOI: 10.1021/acs.nanolett.2c04637] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As the field of nanocrystal-based optoelectronics matures, more advanced techniques must be developed in order to reveal the electronic structure of nanocrystals, particularly with device-relevant conditions. So far, most of the efforts have been focused on optical spectroscopy, and electrochemistry where an absolute energy reference is required. Device optimization requires probing not only the pristine material but also the material in its actual environment (i.e., surrounded by a transport layer and an electrode, in the presence of an applied electric field). Here, we explored the use of photoemission microscopy as a strategy for operando investigation of NC-based devices. We demonstrate that the method can be applied to a variety of materials and device geometries. Finally, we show that it provides direct access to the metal-semiconductor interface band bending as well as the distance over which the gate effect propagates in field-effect transistors.
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Affiliation(s)
- Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Corentin Dabard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, 75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Dario Mastrippolito
- Department of Physical and Chemical Sciences (DSFC), University of L'Aquila, Via Vetoio, 67100 L'Aquila, Italy
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Loïc Becerra
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Michael Rosticher
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, 75005 Paris, France
| | - Mathieu G Silly
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - James K Utterback
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - José Avila
- Synchrotron SOLEIL, L'Orme des Merisiers, Départementale 128, 91190 Saint-Aubin, France
| | - Debora Pierucci
- Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
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26
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Cuadra L, Salcedo-Sanz S, Nieto-Borge JC. Carrier Transport in Colloidal Quantum Dot Intermediate Band Solar Cell Materials Using Network Science. Int J Mol Sci 2023; 24:3797. [PMID: 36835214 PMCID: PMC9960920 DOI: 10.3390/ijms24043797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Revised: 02/05/2023] [Accepted: 02/08/2023] [Indexed: 02/17/2023] Open
Abstract
Colloidal quantum dots (CQDs) have been proposed to obtain intermediate band (IB) materials. The IB solar cell can absorb sub-band-gap photons via an isolated IB within the gap, generating extra electron-hole pairs that increase the current without degrading the voltage, as has been demonstrated experimentally for real cells. In this paper, we model the electron hopping transport (HT) as a network embedded in space and energy so that a node represents the first excited electron state localized in a CQD while a link encodes the Miller-Abrahams (MA) hopping rate for the electron to hop from one node (=state) to another, forming an "electron-HT network". Similarly, we model the hole-HT system as a network so that a node encodes the first hole state localized in a CQD while a link represents the MA hopping rate for the hole to hop between nodes, leading to a "hole-HT network". The associated network Laplacian matrices allow for studying carrier dynamics in both networks. Our simulations suggest that reducing both the carrier effective mass in the ligand and the inter-dot distance increases HT efficiency. We have found a design constraint: It is necessary for the average barrier height to be larger than the energetic disorder to not degrade intra-band absorption.
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Affiliation(s)
- Lucas Cuadra
- Department of Signal Processing and Communications, University of Alcalá, 28805 Madrid, Spain
- Department of Physics and Mathematics, University of Alcalá, 28805 Madrid, Spain
| | - Sancho Salcedo-Sanz
- Department of Signal Processing and Communications, University of Alcalá, 28805 Madrid, Spain
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27
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Hao Q, Lv H, Ma H, Tang X, Chen M. Development of Self-Assembly Methods on Quantum Dots. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1317. [PMID: 36770326 PMCID: PMC9919123 DOI: 10.3390/ma16031317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/12/2023] [Revised: 01/28/2023] [Accepted: 01/31/2023] [Indexed: 06/18/2023]
Abstract
Quantum dot materials, with their unique photophysical properties, are promising zero-dimensional materials for encryption, display, solar cells, and biomedical applications. However, due to the large surface to volume ratio, they face the challenge of chemical instability and low carrier transport efficiency, which have greatly limited their reliability and utility. In light of the current development bottleneck of quantum dot materials, the chemical stability and physical properties can be effectively improved by the self-assembly method. This review will discuss the research progress of the self-assembly methods of quantum dots and analyze the advantages and disadvantages of those self-assembly methods. Furthermore, the scientific challenges and improvement in the self-assembly method of quantum dots are prospected.
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Affiliation(s)
- Qun Hao
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Hongyu Lv
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Haifei Ma
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
| | - Xin Tang
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
| | - Menglu Chen
- School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314019, China
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28
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Pinna J, Mehrabi Koushki R, Gavhane DS, Ahmadi M, Mutalik S, Zohaib M, Protesescu L, Kooi BJ, Portale G, Loi MA. Approaching Bulk Mobility in PbSe Colloidal Quantum Dots 3D Superlattices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207364. [PMID: 36308048 DOI: 10.1002/adma.202207364] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2022] [Revised: 10/13/2022] [Indexed: 06/16/2023]
Abstract
3D superlattices made of colloidal quantum dots are a promising candidate for the next generation of optoelectronic devices as they are expected to exhibit a unique combination of tunable optical properties and coherent electrical transport through minibands. While most of the previous work was performed on 2D arrays, the control over the formation of these systems is lacking, where limited long-range order and energetical disorder have so far hindered the potential of these metamaterials, giving rise to disappointing transport properties. Here, it is reported that nanoscale-level controlled ordering of colloidal quantum dots in 3D and over large areas allows the achievement of outstanding transport properties. The measured electron mobilities are the highest ever reported for a self-assembled solid of fully quantum-confined objects. This ultimately demonstrates that optoelectronic metamaterials with highly tunable optical properties (in this case in the short-wavelength infrared spectral range) and charge mobilities approaching that of bulk semiconductor can be obtained. This finding paves the way toward a new generation of optoelectronic devices.
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Affiliation(s)
- Jacopo Pinna
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh, 4, Groningen, 9747 AG, The Netherlands
| | - Razieh Mehrabi Koushki
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh, 4, Groningen, 9747 AG, The Netherlands
| | - Dnyaneshwar S Gavhane
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh, 4, Groningen, 9747 AG, The Netherlands
| | - Majid Ahmadi
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh, 4, Groningen, 9747 AG, The Netherlands
| | - Suhas Mutalik
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh, 4, Groningen, 9747 AG, The Netherlands
| | - Muhammad Zohaib
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh, 4, Groningen, 9747 AG, The Netherlands
| | - Loredana Protesescu
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh, 4, Groningen, 9747 AG, The Netherlands
| | - Bart J Kooi
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh, 4, Groningen, 9747 AG, The Netherlands
| | - Giuseppe Portale
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh, 4, Groningen, 9747 AG, The Netherlands
| | - Maria Antonietta Loi
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh, 4, Groningen, 9747 AG, The Netherlands
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29
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Xue X, Chen M, Luo Y, Qin T, Tang X, Hao Q. High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction. LIGHT, SCIENCE & APPLICATIONS 2023; 12:2. [PMID: 36587039 PMCID: PMC9805449 DOI: 10.1038/s41377-022-01014-0] [Citation(s) in RCA: 19] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/13/2022] [Revised: 10/10/2022] [Accepted: 10/11/2022] [Indexed: 06/17/2023]
Abstract
Due to thermal carriers generated by a narrow mid-infrared energy gap, cooling is always necessary to achieve ideal photodetection. In quantum dot (QD), the electron thermal generation should be reduced with quantum confinement in all three dimensions. As a result, there would be a great potential to realize high-operating-temperature (HOT) QD mid-IR photodetectors, though not yet achieved. Taking the advantages of colloidal nanocrystals' solution processability and precise doping control by surface dipoles, this work demonstrates a HOT mid-infrared photodetector with a QD gradient homojunction. The detector achieves background-limited performance with D* = 2.7 × 1011 Jones on 4.2 μm at 80 K, above 1011 Jones until 200 K, above 1010 Jones until 280 K, and 7.6 × 109 Jones on 3.5 μm at 300 K. The external quantum efficiency also achieves more than 77% with responsivity 2.7 A/W at zero bias. The applications such as spectrometers, chemical sensors, and thermal cameras, are also approved, which motivate interest in low-cost, solution-processed and high-performance mid-infrared photodetection beyond epitaxial growth bulk photodetectors.
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Affiliation(s)
- Xiaomeng Xue
- School of Optics and Photonics, Beijing Institute of Technology, No. 5 Zhongguancun South Street, Beijing, China
| | - Menglu Chen
- School of Optics and Photonics, Beijing Institute of Technology, No. 5 Zhongguancun South Street, Beijing, China.
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing, China.
- Yangtze Delta Region Academy of Beijing Institute of Technology, Beijing, China.
| | - Yuning Luo
- School of Optics and Photonics, Beijing Institute of Technology, No. 5 Zhongguancun South Street, Beijing, China
| | - Tianling Qin
- School of Optics and Photonics, Beijing Institute of Technology, No. 5 Zhongguancun South Street, Beijing, China
| | - Xin Tang
- School of Optics and Photonics, Beijing Institute of Technology, No. 5 Zhongguancun South Street, Beijing, China.
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing, China.
- Yangtze Delta Region Academy of Beijing Institute of Technology, Beijing, China.
| | - Qun Hao
- School of Optics and Photonics, Beijing Institute of Technology, No. 5 Zhongguancun South Street, Beijing, China.
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing, China.
- Yangtze Delta Region Academy of Beijing Institute of Technology, Beijing, China.
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30
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Abelson A, Qian C, Crawford Z, Zimanyi GT, Law M. High-Mobility Hole Transport in Single-Grain PbSe Quantum Dot Superlattice Transistors. NANO LETTERS 2022; 22:9578-9585. [PMID: 36411037 PMCID: PMC9756332 DOI: 10.1021/acs.nanolett.2c03657] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/22/2022] [Revised: 11/14/2022] [Indexed: 06/16/2023]
Abstract
Epitaxially-fused superlattices of colloidal quantum dots (QD epi-SLs) may exhibit electronic minibands and high-mobility charge transport, but electrical measurements of epi-SLs have been limited to large-area, polycrystalline samples in which superlattice grain boundaries and intragrain defects suppress/obscure miniband effects. Systematic measurements of charge transport in individual, highly-ordered epi-SL grains would facilitate the study of minibands in QD films. Here, we demonstrate the air-free fabrication of microscale field-effect transistors (μ-FETs) with channels consisting of single PbSe QD epi-SL grains (2-7 μm channel dimensions) and analyze charge transport in these single-grain devices. The eight devices studied show p-channel or ambipolar transport with a hole mobility as high as 3.5 cm2 V-1 s-1 at 290 K and 6.5 cm2 V-1 s-1 at 170-220 K, one order of magnitude larger than that of previous QD solids. The mobility peaks at 150-220 K, but device hysteresis at higher temperatures makes the true mobility-temperature curve uncertain and evidence for miniband transport inconclusive.
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Affiliation(s)
- Alex Abelson
- Department
of Materials Science and Engineering, University
of California, Irvine, Irvine, California 92697, United States
| | - Caroline Qian
- Department
of Chemical and Biomolecular Engineering, University of California, Irvine, Irvine, California 92697, United States
| | - Zachary Crawford
- Department
of Physics, University of California, Davis, Davis, California 95616, United States
| | - Gergely T. Zimanyi
- Department
of Physics, University of California, Davis, Davis, California 95616, United States
| | - Matt Law
- Department
of Materials Science and Engineering, University
of California, Irvine, Irvine, California 92697, United States
- Department
of Chemical and Biomolecular Engineering, University of California, Irvine, Irvine, California 92697, United States
- Department
of Chemistry, University of California,
Irvine, Irvine, California 92697, United States
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31
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Erwin SC, Efros AL. Electronic transport in quantum-dot-in-perovskite solids. NANOSCALE 2022; 14:17725-17734. [PMID: 36420634 DOI: 10.1039/d2nr04244d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
We investigate theoretically the band transport of electrons and holes in a "quantum-dot-in-perovskite" solid, a periodic array of semiconductor nanocrystal quantum dots embedded in a matrix of lead halide perovskite. For concreteness we focus on PbS quantum dots passivated by inorganic halogen ligands and embedded in a matrix of CsPbI3. We find that the halogen ligands play a decisive role in determining the band offset between the dot and matrix and may therefore provide a straightforward way to control transport experimentally. The model and analysis developed here may readily be generalized to analyze band transport in a broader class of dot-in-solid materials.
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Affiliation(s)
- Steven C Erwin
- Center for Computational Materials Science, Naval Research Laboratory, Washington, DC 20375, USA.
| | - Alexander L Efros
- Center for Computational Materials Science, Naval Research Laboratory, Washington, DC 20375, USA.
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32
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Zhang S, Bi C, Tan Y, Luo Y, Liu Y, Cao J, Chen M, Hao Q, Tang X. Direct Optical Lithography Enabled Multispectral Colloidal Quantum-Dot Imagers from Ultraviolet to Short-Wave Infrared. ACS NANO 2022; 16:18822-18829. [PMID: 36346695 PMCID: PMC9706660 DOI: 10.1021/acsnano.2c07586] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Accepted: 11/04/2022] [Indexed: 06/13/2023]
Abstract
Complementary metal oxide semiconductor (CMOS) silicon sensors play a central role in optoelectronics with widespread applications from small cell phone cameras to large-format imagers for remote sensing. Despite numerous advantages, their sensing ranges are limited within the visible (0.4-0.7 μm) and near-infrared (0.8-1.1 μm) range , defined by their energy gaps (1.1 eV). However, below or above that spectral range, ultraviolet (UV) and short-wave infrared (SWIR) have been demonstrated in numerous applications such as fingerprint identification, night vision, and composition analysis. In this work, we demonstrate the implementation of multispectral broad-band CMOS-compatible imagers with UV-enhanced visible pixels and SWIR pixels by layer-by-layer direct optical lithography of colloidal quantum dots (CQDs). High-resolution single-color images and merged multispectral images were obtained by using one imager. The photoresponse nonuniformity (PRNU) is below 5% with a 0% dead pixel rate and room-temperature responsivities of 0.25 A/W at 300 nm, 0.4 A/W at 750 nm, and 0.25 A/W at 2.0 μm.
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Affiliation(s)
- Shuo Zhang
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
| | - Cheng Bi
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
- Zhongxinrecheng
Science and Technology Co., Ltd., Beijing101102, People’s
Republic of China
| | - Yimei Tan
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
| | - Yuning Luo
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
| | - Yanfei Liu
- Zhongxinrecheng
Science and Technology Co., Ltd., Beijing101102, People’s
Republic of China
| | - Jie Cao
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
- Beijing
Key Laboratory for Precision Optoelectronic Measurement Instrument
and Technology, Beijing100081, People’s Republic of China
- Yangtze
Delta Region Academy of Beijing Institute of Technology, Jiaxing314019, People’s Republic of China
| | - Menglu Chen
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
- Beijing
Key Laboratory for Precision Optoelectronic Measurement Instrument
and Technology, Beijing100081, People’s Republic of China
- Yangtze
Delta Region Academy of Beijing Institute of Technology, Jiaxing314019, People’s Republic of China
| | - Qun Hao
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
- Beijing
Key Laboratory for Precision Optoelectronic Measurement Instrument
and Technology, Beijing100081, People’s Republic of China
- Yangtze
Delta Region Academy of Beijing Institute of Technology, Jiaxing314019, People’s Republic of China
| | - Xin Tang
- School
of Optics and Photonics, Beijing Institute
of Technology, Beijing100081, People’s Republic
of China
- Beijing
Key Laboratory for Precision Optoelectronic Measurement Instrument
and Technology, Beijing100081, People’s Republic of China
- Yangtze
Delta Region Academy of Beijing Institute of Technology, Jiaxing314019, People’s Republic of China
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33
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Abadie C, Paggi L, Fabas A, Khalili A, Dang TH, Dabard C, Cavallo M, Alchaar R, Zhang H, Prado Y, Bardou N, Dupuis C, Xu XZ, Ithurria S, Pierucci D, Utterback JK, Fix B, Vincent G, Bouchon P, Lhuillier E. Helmholtz Resonator Applied to Nanocrystal-Based Infrared Sensing. NANO LETTERS 2022; 22:8779-8785. [PMID: 36190814 DOI: 10.1021/acs.nanolett.2c02769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
While the integration of nanocrystals as an active medium for optoelectronic devices progresses, light management strategies are becoming required. Over recent years, several photonic structures (plasmons, cavities, mirrors, etc.) have been coupled to nanocrystal films to shape the absorption spectrum, tune the directionality, and so on. Here, we explore a photonic equivalent of the acoustic Helmholtz resonator and propose a design that can easily be fabricated. This geometry combines a strong electromagnetic field magnification and a narrow channel width compatible with efficient charge conduction despite hopping conduction. At 80 K, the device reaches a responsivity above 1 A·W-1 and a detectivity above 1011 Jones (3 μm cutoff) while offering a significantly faster time-response than vertical geometry diodes.
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Affiliation(s)
- Claire Abadie
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Laura Paggi
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Alice Fabas
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Adrien Khalili
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Tung Huu Dang
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Corentin Dabard
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Mariarosa Cavallo
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Rodolphe Alchaar
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Huichen Zhang
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Yoann Prado
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Nathalie Bardou
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Christophe Dupuis
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Debora Pierucci
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - James K Utterback
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
| | - Baptiste Fix
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Grégory Vincent
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Patrick Bouchon
- DOTA, ONERA, Université Paris Saclay, F-91123 Palaiseau, France
| | - Emmanuel Lhuillier
- CNRS, Institut des NanoSciences de Paris, Sorbonne Université, 4 place jussieu, F-75005 Paris, France
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34
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Intrinsic glassy-metallic transport in an amorphous coordination polymer. Nature 2022; 611:479-484. [DOI: 10.1038/s41586-022-05261-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Accepted: 08/22/2022] [Indexed: 11/08/2022]
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35
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Pierini S, Capitani F, Scimeca M, Kozlov S, Pierucci D, Alchaar R, Abadie C, Khalili A, Cavallo M, Dang TH, Zhang H, Bossavit E, Gréboval C, Avila J, Baptiste B, Klotz S, Sahu A, Feuillet-Palma C, Xu XZ, Ouerghi A, Ithurria S, Utterback JK, Sauvage S, Lhuillier E. Vanishing Confinement Regime in Terahertz HgTe Nanocrystals Studied under Extreme Conditions of Temperature and Pressure. J Phys Chem Lett 2022; 13:6919-6926. [PMID: 35867700 DOI: 10.1021/acs.jpclett.2c01636] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
While HgTe nanocrystals (NCs) in the mid-infrared region have reached a high level of maturity, their far-infrared counterparts remain far less studied, raising the need for an in-depth investigation of the material before efficient device integration can be considered. Here, we explore the effect of temperature and pressure on the structural, spectroscopic, and transport properties of HgTe NCs displaying an intraband absorption at 10 THz. The temperature leads to a very weak modulation of the spectrum as opposed to what was observed for strongly confined HgTe NCs. HgTe NC films present ambipolar conduction with a clear prevalence of electron conduction as confirmed by transistor and thermoelectric measurements. Under the application of pressure, the material undergoes phase transitions from the zinc blende to cinnabar phase and later to the rock salt phase which we reveal using joint X-ray diffraction and infrared spectroscopy measurements. We discuss how the pressure existence domain of each phase is affected by the particle size.
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Affiliation(s)
- Stefano Pierini
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | | | - Michael Scimeca
- Department of Chemical and Biomolecular Engineering, New York University, Brooklyn, New York 11201, United States
| | - Sergei Kozlov
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Debora Pierucci
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Claire Abadie
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Mariarosa Cavallo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Tung Huu Dang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Huichen Zhang
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Erwan Bossavit
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - José Avila
- Synchrotron SOLEIL, Saint-Aubin, BP48, 91190 Saint-Aubin, France
| | - Benoit Baptiste
- Sorbonne Université, CNRS, Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, IMPMC, F-75005 Paris, France
| | - Stefan Klotz
- Sorbonne Université, CNRS, Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, IMPMC, F-75005 Paris, France
| | - Ayaskanta Sahu
- Department of Chemical and Biomolecular Engineering, New York University, Brooklyn, New York 11201, United States
| | - Cheryl Feuillet-Palma
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Xiang Zhen Xu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - Abdelkarim Ouerghi
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin, 75005 Paris, France
| | - James K Utterback
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
| | - Sebastien Sauvage
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, CNRS, 10 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France
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36
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Chen M, Hao Q, Luo Y, Tang X. Mid-Infrared Intraband Photodetector via High Carrier Mobility HgSe Colloidal Quantum Dots. ACS NANO 2022; 16:11027-11035. [PMID: 35792103 DOI: 10.1021/acsnano.2c03631] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
In this work, a room-temperature mixed-phase ligand exchange method is developed to obtain a relatively high carrier mobility (∼1 cm2/(V s)) on HgSe intraband colloidal quantum dot solids without any observable trap state. What is more, the doping from 1Se to 1Pe state in the conduction band could be precisely controlled by additional salts during this method, proved by optical and transport experiments. The high mobility and controllable doping benefit the mid-infrared photodetector utilizing the 1Se to 1Pe transition, with a 1000-fold improvement in response speed, which is several μs, a 55-fold increase in responsivity, which is 77 mA/W, and a 10-fold increase in specific detectivity, which is above 1.7 × 109 Jones at 80 K. The high-performance photodetector could serve as an intraband infrared camera for thermal imaging, as well as a CO2 gas sensor with a range from 0.25 to 2000 ppm.
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Affiliation(s)
- Menglu Chen
- School of Optics and Photonics, Beijing Institute of Technology, No. 5, Zhongguancun South Street, Beijing, 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing, 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314000, China
| | - Qun Hao
- School of Optics and Photonics, Beijing Institute of Technology, No. 5, Zhongguancun South Street, Beijing, 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing, 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314000, China
| | - Yuning Luo
- School of Optics and Photonics, Beijing Institute of Technology, No. 5, Zhongguancun South Street, Beijing, 100081, China
| | - Xin Tang
- School of Optics and Photonics, Beijing Institute of Technology, No. 5, Zhongguancun South Street, Beijing, 100081, China
- Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology, Beijing, 100081, China
- Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, 314000, China
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37
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Gréboval C, Darson D, Parahyba V, Alchaar R, Abadie C, Noguier V, Ferré S, Izquierdo E, Khalili A, Prado Y, Potet P, Lhuillier E. Photoconductive focal plane array based on HgTe quantum dots for fast and cost-effective short-wave infrared imaging. NANOSCALE 2022; 14:9359-9368. [PMID: 35726871 DOI: 10.1039/d2nr01313d] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
HgTe nanocrystals, thanks to quantum confinement, present a broadly tunable band gap all over the infrared spectral range. In addition, significant efforts have been dedicated to the design of infrared sensors with an absorbing layer made of nanocrystals. However, most efforts have been focused on single pixel sensors. Nanocrystals offer an appealing alternative to epitaxially grown semiconductors for infrared imaging by reducing the material growth cost and easing the coupling to the readout circuit. Here we propose a strategy to design an infrared focal plane array from a single fabrication step. The focal plane array (FPA) relies on a specifically designed readout circuit enabling in plane electric field application and operation in photoconductive mode. We demonstrate a VGA format focal plane array with a 15 μm pixel pitch presenting an external quantum efficiency of 4-5% (15% internal quantum efficiency) for a cut-off around 1.8 μm and operation using Peltier cooling only. The FPA is compatible with 200 fps imaging full frame and imaging up to 340 fps is demonstrated by driving a reduced area of the FPA. In the last part of the paper, we discuss the cost of such sensors and show that the latter is only driven by labor costs while we estimate the cost of the NC film to be in the 10-20 € range.
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Affiliation(s)
- Charlie Gréboval
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - David Darson
- Laboratoire de Physique de l'Ecole normale supérieure, ENS, Université PSL, CNRS, Sorbonne Université, Université Paris-Diderot, Sorbonne Paris Cité, Paris, France
| | - Victor Parahyba
- New Imaging Technologies SA, 1 impasse de la Noisette, 91370 Verrières le Buisson, France
| | - Rodolphe Alchaar
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Claire Abadie
- ONERA - The French Aerospace Lab, 6, chemin de la Vauve aux Granges, BP 80100, 91123 Palaiseau, France
| | - Vincent Noguier
- New Imaging Technologies SA, 1 impasse de la Noisette, 91370 Verrières le Buisson, France
| | - Simon Ferré
- New Imaging Technologies SA, 1 impasse de la Noisette, 91370 Verrières le Buisson, France
| | - Eva Izquierdo
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Adrien Khalili
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Yoann Prado
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
| | - Pierre Potet
- New Imaging Technologies SA, 1 impasse de la Noisette, 91370 Verrières le Buisson, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, F-75005 Paris, France.
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38
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Ballabio M, Cánovas E. Electron Transfer at Quantum Dot–Metal Oxide Interfaces for Solar Energy Conversion. ACS NANOSCIENCE AU 2022; 2:367-395. [PMID: 36281255 PMCID: PMC9585894 DOI: 10.1021/acsnanoscienceau.2c00015] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
![]()
Electron transfer
at a donor–acceptor quantum dot–metal
oxide interface is a process fundamentally relevant to solar energy
conversion architectures as, e.g., sensitized solar cells and solar
fuels schemes. As kinetic competition at these technologically relevant
interfaces largely determines device performance, this Review surveys
several aspects linking electron transfer dynamics and device efficiency;
this correlation is done for systems aiming for efficiencies up to
and above the ∼33% efficiency limit set by Shockley and Queisser
for single gap devices. Furthermore, we critically comment on common
pitfalls associated with the interpretation of kinetic data obtained
from current methodologies and experimental approaches, and finally,
we highlight works that, to our judgment, have contributed to a better
understanding of the fundamentals governing electron transfer at quantum
dot–metal oxide interfaces.
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Affiliation(s)
- Marco Ballabio
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA Nanociencia), 28049 Madrid, Spain
| | - Enrique Cánovas
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA Nanociencia), 28049 Madrid, Spain
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39
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Zhang Z, Sung J, Toolan DTW, Han S, Pandya R, Weir MP, Xiao J, Dowland S, Liu M, Ryan AJ, Jones RAL, Huang S, Rao A. Ultrafast exciton transport at early times in quantum dot solids. NATURE MATERIALS 2022; 21:533-539. [PMID: 35256791 DOI: 10.1038/s41563-022-01204-6] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2020] [Accepted: 01/18/2022] [Indexed: 06/14/2023]
Abstract
Quantum dot (QD) solids are an emerging platform for developing a range of optoelectronic devices. Thus, understanding exciton dynamics is essential towards developing and optimizing QD devices. Here, using transient absorption microscopy, we reveal the initial exciton dynamics in QDs with femtosecond timescales. We observe high exciton diffusivity (~102 cm2 s-1) in lead chalcogenide QDs within the first few hundred femtoseconds after photoexcitation followed by a transition to a slower regime (~10-1-1 cm2 s-1). QD solids with larger interdot distances exhibit higher initial diffusivity and a delayed transition to the slower regime, while higher QD packing density and heterogeneity accelerate this transition. The fast transport regime occurs only in materials with exciton Bohr radii much larger than the QD sizes, suggesting the transport of delocalized excitons in this regime and a transition to slower transport governed by exciton localization. These findings suggest routes to control the optoelectronic properties of QD solids.
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Affiliation(s)
- Zhilong Zhang
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - Jooyoung Sung
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
- Department of Emerging Materials Science, DGIST, Daegu, Republic of Korea.
| | | | - Sanyang Han
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - Raj Pandya
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Laboratoire Kastler Brossel, École Normale Superiéure-Université PSL, CNRS, Sorbonne Université, College de France, Paris, France
| | - Michael P Weir
- Department of Physics and Astronomy, The University of Sheffield, Sheffield, UK
- School of Physics and Astronomy, The University of Nottingham, University Park, Nottingham, UK
| | - James Xiao
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - Simon Dowland
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - Mengxia Liu
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
| | - Anthony J Ryan
- Department of Chemistry, The University of Sheffield, Sheffield, UK
| | - Richard A L Jones
- Department of Materials Science, University of Manchester, Manchester, UK
| | - Shujuan Huang
- School of Engineering, Macquarie University, Sydney, New South Wales, Australia
| | - Akshay Rao
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
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40
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Yang J, Hu H, Lv Y, Yuan M, Wang B, He Z, Chen S, Wang Y, Hu Z, Yu M, Zhang X, He J, Zhang J, Liu H, Hsu HY, Tang J, Song H, Lan X. Ligand-Engineered HgTe Colloidal Quantum Dot Solids for Infrared Photodetectors. NANO LETTERS 2022; 22:3465-3472. [PMID: 35435694 DOI: 10.1021/acs.nanolett.2c00950] [Citation(s) in RCA: 21] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
HgTe colloidal quantum dots (CQDs) are promising absorber systems for infrared detection due to their widely tunable photoresponse in all infrared regions. Up to now, the best-performing HgTe CQD photodetectors have relied on using aggregated CQDs, limiting the device design, uniformity and performance. Herein, we report a ligand-engineered approach that produces well-separated HgTe CQDs. The present strategy first employs strong-binding alkyl thioalcohol ligands to enable the synthesis of well-dispersed HgTe cores, followed by a second growth process and a final postligand modification step enhancing their colloidal stability. We demonstrate highly monodisperse HgTe CQDs in a wide size range, from 4.2 to 15.0 nm with sharp excitonic absorption fully covering short- and midwave infrared regions, together with a record electron mobility of up to 18.4 cm2 V-1 s-1. The photodetectors show a room-temperature detectivity of 3.9 × 1011 jones at a 1.7 μm cutoff absorption edge.
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Affiliation(s)
- Ji Yang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Huicheng Hu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Yifei Lv
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Mohan Yuan
- School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei 430205, People's Republic of China
| | - Binbin Wang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Ziyang He
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Shiwu Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Ya Wang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Zhixiang Hu
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Mengxuan Yu
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Xingchen Zhang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
| | - Jungang He
- School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, Hubei 430205, People's Republic of China
| | - Jianbing Zhang
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Huan Liu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Hsien-Yi Hsu
- School of Energy and Environment & Department of Materials Science and Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong 999077, People's Republic of China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
| | - Xinzheng Lan
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China
- Optics Valley Laboratory, Wuhan, Hubei 430074, People's Republic of China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang 325035, People's Republic of China
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41
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Montanarella F, Kovalenko MV. Three Millennia of Nanocrystals. ACS NANO 2022; 16:5085-5102. [PMID: 35325541 PMCID: PMC9046976 DOI: 10.1021/acsnano.1c11159] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/15/2021] [Accepted: 03/17/2022] [Indexed: 05/31/2023]
Abstract
The broad deployment of nanotechnology and nanomaterials in modern society is increasing day by day to the point that some have seen in this process the transition from the Silicon Age to a new Nano Age. Nanocrystals─a distinct class of nanomaterials─are forecast to play a pivotal role in the next generation of devices such as liquid crystal displays, light-emitting diodes, lasers, and luminescent solar concentrators. However, it is not to be forgotten that this cutting-edge technology is rooted in empirical knowledge and craftsmanship developed over the millennia. This review aims to span the major applications in which nanocrystals were consistently employed by our forebears. Through an analysis of these examples, we show that the modern-age discoveries stem from multimillennial experience passed on from our proto-chemist ancestors to us.
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Affiliation(s)
- Federico Montanarella
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir-Prelog-Weg 1, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa−Swiss
Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
| | - Maksym V. Kovalenko
- Laboratory
of Inorganic Chemistry, Department of Chemistry and Applied Biosciences, ETH Zürich, Vladimir-Prelog-Weg 1, CH-8093 Zürich, Switzerland
- Laboratory
for Thin Films and Photovoltaics, Empa−Swiss
Federal Laboratories for Materials Science and Technology, Überlandstrasse 129, CH-8600 Dübendorf, Switzerland
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42
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Abstract
In this paper, we investigate an intraband mid-infrared photodetector based on HgSe colloidal quantum dots (CQDs). We study the size, absorption spectra, and carrier mobility of HgSe CQDs films. By regulating the time and temperature of the reaction during synthesis, we have achieved the regulation of CQDs size, and the number of electrons doped in conduction band. It is experimentally verified by the field effect transistor measurement that dark current is effectively reduced by a factor of 10 when the 1Se state is doped with two electrons compared with other doping densities. The HgSe CQDs film mobility is also measured as a function of temperature the HgSe CQDs thin film detector, which could be well fitted by Marcus Theory with a maximum of 0.046 ± 0.002 cm2/Vs at room temperature. Finally, we experimentally discuss the device performance such as photocurrent and responsivity. The responsivity reaches a maximum of 0.135 ± 0.012 A/W at liquid nitrogen temperature with a narrow band photocurrent spectrum.
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43
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Coropceanu I, Janke EM, Portner J, Haubold D, Nguyen TD, Das A, Tanner CPN, Utterback JK, Teitelbaum SW, Hudson MH, Sarma NA, Hinkle AM, Tassone CJ, Eychmüller A, Limmer DT, Olvera de la Cruz M, Ginsberg NS, Talapin DV. Self-assembly of nanocrystals into strongly electronically coupled all-inorganic supercrystals. Science 2022; 375:1422-1426. [PMID: 35324292 DOI: 10.1126/science.abm6753] [Citation(s) in RCA: 36] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Colloidal nanocrystals of metals, semiconductors, and other functional materials can self-assemble into long-range ordered crystalline and quasicrystalline phases, but insulating organic surface ligands prevent the development of collective electronic states in ordered nanocrystal assemblies. We reversibly self-assembled colloidal nanocrystals of gold, platinum, nickel, lead sulfide, and lead selenide with conductive inorganic ligands into supercrystals exhibiting optical and electronic properties consistent with strong electronic coupling between the constituent nanocrystals. The phase behavior of charge-stabilized nanocrystals can be rationalized and navigated with phase diagrams computed for particles interacting through short-range attractive potentials. By finely tuning interparticle interactions, the assembly was directed either through one-step nucleation or nonclassical two-step nucleation pathways. In the latter case, the nucleation was preceded by the formation of two metastable colloidal fluids.
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Affiliation(s)
- Igor Coropceanu
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Eric M Janke
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Joshua Portner
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Danny Haubold
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.,Physical Chemistry, Technische Universität Dresden, Dresden, Germany
| | - Trung Dac Nguyen
- Department of Chemical and Biological Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Avishek Das
- Department of Chemistry, University of California, Berkeley, CA 94720, USA
| | | | - James K Utterback
- Department of Chemistry, University of California, Berkeley, CA 94720, USA
| | - Samuel W Teitelbaum
- Department of Physics and Beus CXFEL Labs, Biodesign Institute, Arizona State University, Tempe, AZ 85287, USA
| | - Margaret H Hudson
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Nivedina A Sarma
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Alex M Hinkle
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Christopher J Tassone
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, USA
| | | | - David T Limmer
- Department of Chemistry, University of California, Berkeley, CA 94720, USA.,Chemical Sciences Division and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.,Kavli Energy NanoSciences Institute, University of California, Berkeley, CA 94720, USA
| | - Monica Olvera de la Cruz
- Department of Chemical and Biological Engineering, Northwestern University, Evanston, IL 60208, USA.,Department of Materials Science and Engineering, Department of Chemistry, and Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208, USA
| | - Naomi S Ginsberg
- Department of Chemistry, University of California, Berkeley, CA 94720, USA.,Kavli Energy NanoSciences Institute, University of California, Berkeley, CA 94720, USA.,Department of Physics, University of California, Berkeley, CA 94720, USA.,Materials Sciences Division, Molecular Biophysics and Integrated Bioimaging Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Dmitri V Talapin
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA.,Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60517, USA
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44
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Feng J, Qiu Y, Jiang L, Wu Y. Long-Range-Ordered Assembly of Micro-/Nanostructures at Superwetting Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106857. [PMID: 34908188 DOI: 10.1002/adma.202106857] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Revised: 12/03/2021] [Indexed: 06/14/2023]
Abstract
On-chip integration of solution-processable materials imposes stringent and simultaneous requirements of controlled nucleation and growth, tunable geometry and dimensions, and long-range-ordered assembly, which is challenging in solution process far from thermodynamic equilibrium. Superwetting interfaces, underpinned by programmable surface chemistry and topography, are promising for steering transport, dewetting, and microfluid dynamics of liquids, thus opening a new paradigm for micro-/nanostructure assembly in solution process. Herein, assembly methods on the basis of superwetting interfaces are reviewed for constructing long-range-ordered micro-/nanostructures. Confined capillary liquids, including capillary bridges and capillary corner menisci realized by controlling local wettability and surface topography, are highlighted for simultaneously attained deterministic patterning and long-range order. The versatility and robustness of confined capillary liquids are discussed with assembly of single-crystalline micro-/nanostructures of organic semiconductors, metal-halide perovskites, and colloidal-nanoparticle superlattices, which lead to enhanced device performances and exotic functionalities. Finally, a perspective for promising directions in this realm is provided.
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Affiliation(s)
- Jiangang Feng
- Key Laboratory of Bioinspired Smart Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Department of Chemical and Biomolecular Sciences, National University of Singapore, Singapore, 117585, Singapore
| | - Yuchen Qiu
- Key Laboratory of Bioinspired Smart Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Lei Jiang
- Key Laboratory of Bioinspired Smart Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry, Beihang University, Beijing, 100191, P. R. China
| | - Yuchen Wu
- Key Laboratory of Bioinspired Smart Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
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45
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Rodosthenous P, Skibinsky-Gitlin ES, Rodriguez-Bolivar S, Califano M, Gomez-Campos FM. Band-like transport in 'green' quantum dot films: the effect of composition and stoichiometry. J Chem Phys 2022; 156:104704. [DOI: 10.1063/5.0078375] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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46
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Ye ZT, Wu JY. Use of Recycling-Reflection Color-Purity Enhancement Film to Improve Color Purity of Full-Color Micro-LEDs. NANOSCALE RESEARCH LETTERS 2022; 17:1. [PMID: 34978610 PMCID: PMC8724495 DOI: 10.1186/s11671-021-03642-8] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2021] [Accepted: 12/16/2021] [Indexed: 06/08/2023]
Abstract
A common full-color method involves combining micro-light-emitting diodes (LEDs) chips with color conversion materials such as quantum dots (QDs) to achieve full color. However, during color conversion between micro-LEDs and QDs, QDs cannot completely absorb incident wavelengths cause the emission wavelengths that including incident wavelengths and converted wavelength through QDs, which compromises color purity. The present paper proposes the use of a recycling-reflection color-purity-enhancement film (RCPEF) to reflect the incident wavelength multiple times and, consequently, prevent wavelength mixing after QDs conversion. This RCPEF only allows the light of a specific wavelength to pass through it, exciting blue light is reflected back to the red and green QDs layer. The prototype experiment indicated that with an excitation light source wavelength of 445.5 nm, the use of green QDs and RCPEFs increased color purity from 77.2% to 97.49% and light conversion efficiency by 1.97 times and the use of red QDs and RCPEFs increased color purity to 94.68% and light conversion efficiency by 1.46 times. Thus, high efficiency and color purity were achieved for micro-LEDs displays.
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Affiliation(s)
- Zhi Ting Ye
- Department of Mechanical Engineering, Advanced Institute of Manufacturing with High-Tech Innovations, National Chung Cheng University, 168, University Rd., Min-Hsiung, Chia-Yi, 62102, Taiwan.
| | - Jun-Yi Wu
- Department of Mechanical Engineering, Advanced Institute of Manufacturing with High-Tech Innovations, National Chung Cheng University, 168, University Rd., Min-Hsiung, Chia-Yi, 62102, Taiwan
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47
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Yuan M, Wang X, Chen X, He J, Li K, Song B, Hu H, Gao L, Lan X, Chen C, Tang J. Phase-Transfer Exchange Lead Chalcogenide Colloidal Quantum Dots: Ink Preparation, Film Assembly, and Solar Cell Construction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2102340. [PMID: 34561947 DOI: 10.1002/smll.202102340] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2021] [Revised: 07/23/2021] [Indexed: 06/13/2023]
Abstract
Solution-processed colloidal quantum dots (CQDs) are promising candidates for the third-generation photovoltaics due to their low cost and spectral tunability. The development of CQD solar cells mainly relies on high-quality CQD ink, smooth and dense film, and charge-extraction-favored device architectures. In particular, advances in the processing of CQDs are essential for high-quality QD solids. The phase transfer exchange (PTE), in contrast with traditional solid-state ligand exchange, has demonstrated to be the most promising approach for high-quality QD solids in terms of charge transport and defect passivation. As a result, the efficiencies of Pb chalcogenide CQD solar cells have been rapidly improved to 14.0%. In this review, the development of the PTE method is briefly reviewed for lead chalcogenide CQD ink preparation, film assembly, and device construction. Particularly, the key roles of lead halides and additional additives are emphasized for defect passivation and charge transport improvement. In the end, several potential directions for future research are proposed.
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Affiliation(s)
- Mohan Yuan
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xia Wang
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Xiao Chen
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Jungang He
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Kanghua Li
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Boxiang Song
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Huicheng Hu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xinzheng Lan
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
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48
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Korath Shivan S, Maier A, Scheele M. Emergent properties in supercrystals of atomically precise nanoclusters and colloidal nanocrystals. Chem Commun (Camb) 2022; 58:6998-7017. [DOI: 10.1039/d2cc00778a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We provide a comprehensive account of the optical, electrical and mechanical properties that result from the self-assembly of colloidal nanocrystals or atomically precise nanoclusters into crystalline arrays with long-range order....
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49
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Wang W, Zhang M, Pan Z, Biesold GM, Liang S, Rao H, Lin Z, Zhong X. Colloidal Inorganic Ligand-Capped Nanocrystals: Fundamentals, Status, and Insights into Advanced Functional Nanodevices. Chem Rev 2021; 122:4091-4162. [PMID: 34968050 DOI: 10.1021/acs.chemrev.1c00478] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Colloidal nanocrystals (NCs) are intriguing building blocks for assembling various functional thin films and devices. The electronic, optoelectronic, and thermoelectric applications of solution-processed, inorganic ligand (IL)-capped colloidal NCs are especially promising as the performance of related devices can substantially outperform their organic ligand-capped counterparts. This in turn highlights the significance of preparing IL-capped NC dispersions. The replacement of initial bulky and insulating ligands capped on NCs with short and conductive inorganic ones is a critical step in solution-phase ligand exchange for preparing IL-capped NCs. Solution-phase ligand exchange is extremely appealing due to the highly concentrated NC inks with completed ligand exchange and homogeneous ligand coverage on the NC surface. In this review, the state-of-the-art of IL-capped NCs derived from solution-phase inorganic ligand exchange (SPILE) reactions are comprehensively reviewed. First, a general overview of the development and recent advancements of the synthesis of IL-capped colloidal NCs, mechanisms of SPILE, elementary reaction principles, surface chemistry, and advanced characterizations is provided. Second, a series of important factors in the SPILE process are offered, followed by an illustration of how properties of NC dispersions evolve after ILE. Third, surface modifications of perovskite NCs with use of inorganic reagents are overviewed. They are necessary because perovskite NCs cannot withstand polar solvents or undergo SPILE due to their soft ionic nature. Fourth, an overview of the research progresses in utilizing IL-capped NCs for a wide range of applications is presented, including NC synthesis, NC solid and film fabrication techniques, field effect transistors, photodetectors, photovoltaic devices, thermoelectric, and photoelectrocatalytic materials. Finally, the review concludes by outlining the remaining challenges in this field and proposing promising directions to further promote the development of IL-capped NCs in practical application in the future.
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Affiliation(s)
- Wenran Wang
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Meng Zhang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Zhenxiao Pan
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Gill M Biesold
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Shuang Liang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Huashang Rao
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Zhiqun Lin
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Xinhua Zhong
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
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50
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Liu M, Verma SD, Zhang Z, Sung J, Rao A. Nonequilibrium Carrier Transport in Quantum Dot Heterostructures. NANO LETTERS 2021; 21:8945-8951. [PMID: 34724374 DOI: 10.1021/acs.nanolett.1c01892] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Understanding carrier dynamics and transport in quantum dot based heterostructures is crucial for unlocking their full potential for optoelectronic applications. Here we report the direct visualization of carrier propagation in PbS CQD solids and quantum-dot-in-perovskite heterostructures using femtosecond transient absorption microscopy. We reveal three distinct transport regimes: an initial superdiffusive transport persisting over hundreds of femtoseconds, an Auger-assisted subdiffusive transport before thermal equilibrium is achieved, and a final hopping regime. We demonstrate that the superdiffusive transport lengths correlate strongly with the degree of energetic disorder and carrier delocalization. By tailoring the perovskite content in heterostructures, we obtained a superdiffusive transport length exceeding 90 nm at room temperature and an equivalent diffusivity of up to 106 cm2 s-1, which is 4 orders of magnitude higher than the steady-state values. These findings introduce promising strategies to harness nonequilibrium transport phenomena for more efficient optoelectronic devices.
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Affiliation(s)
- Mengxia Liu
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Sachin Dev Verma
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Zhilong Zhang
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
| | - Jooyoung Sung
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
- Department of Emerging Materials Science, DGIST, Daegu 42988, Republic of Korea
| | - Akshay Rao
- Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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