1
|
Zhang J, Zhang J, Qi Y, Gong S, Xu H, Liu Z, Zhang R, Sadi MA, Sychev D, Zhao R, Yang H, Wu Z, Cui D, Wang L, Ma C, Wu X, Gao J, Chen YP, Wang X, Jiang Y. Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires. Nat Commun 2024; 15:7648. [PMID: 39223121 PMCID: PMC11368953 DOI: 10.1038/s41467-024-52062-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2024] [Accepted: 08/26/2024] [Indexed: 09/04/2024] Open
Abstract
Ferroelectrics are essential in memory devices for multi-bit storage and high-density integration. Ferroelectricity mainly exists in compounds but rare in single-element materials due to their lack of spontaneous polarization in the latter. However, we report a room-temperature ferroelectricity in quasi-one-dimensional Te nanowires. Piezoelectric characteristics, ferroelectric loops and domain reversals are clearly observed. We attribute the ferroelectricity to the ion displacement created by the interlayer interaction between lone-pair electrons. Ferroelectric polarization can induce a strong field effect on the transport along the Te chain, giving rise to a self-gated ferroelectric field-effect transistor. By utilizing ferroelectric Te nanowire as channel, the device exhibits high mobility (~220 cm2·V-1·s-1), continuous-variable resistive states can be observed with long-term retention (>105 s), fast speed (<20 ns) and high-density storage (>1.92 TB/cm2). Our work provides opportunities for single-element ferroelectrics and advances practical applications such as ultrahigh-density data storage and computing-in-memory devices.
Collapse
Affiliation(s)
- Jinlei Zhang
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
- Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing, China
| | - Jiayong Zhang
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Yaping Qi
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Macau SAR, China
- Advanced Institute for Materials Research, Tohoku University, Sendai, Japan
| | - Shuainan Gong
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Hang Xu
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Zhenqi Liu
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Ran Zhang
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Mohammad A Sadi
- Department of Physics and Astronomy and Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
| | - Demid Sychev
- Department of Physics and Astronomy and Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA
| | - Run Zhao
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Hongbin Yang
- Institute of Materials Science & Devices, Suzhou University of Science and Technology, Suzhou, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, China
| | - Dapeng Cui
- Department of Physics and Astronomy, University of Tennessee, Knoxville, TN, USA
| | - Lin Wang
- School of Materials Science and Engineering, Shanghai University, Shanghai, China
| | - Chunlan Ma
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Xiaoshan Wu
- Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
| | - Ju Gao
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China
- School for Optoelectronic Engineering, Zaozhuang University, ZaoZhuang, Shandong, China
| | - Yong P Chen
- Advanced Institute for Materials Research, Tohoku University, Sendai, Japan.
- Department of Physics and Astronomy and Elmore Family School of Electrical and Computer Engineering and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, USA.
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, Aarhus, Denmark.
| | - Xinran Wang
- School of Integrated Circuits, Nanjing University, Suzhou, China.
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
- Interdisciplinary Research Center for Future Intelligent Chips (Chip-X), Nanjing University, Suzhou, China.
- Suzhou Laboratory, Suzhou, China.
| | - Yucheng Jiang
- Key Laboratory of Inteligent Optoelectronic Devices and Chips of Jiangsu Higher Education Institutions, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China.
- Advanced Technology Research Institute of Taihu Photon Center, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, China.
| |
Collapse
|
2
|
Yang H, Martín-García B, Kimák J, Schmoranzerová E, Dolan E, Chi Z, Gobbi M, Němec P, Hueso LE, Casanova F. Twist-angle-tunable spin texture in WSe 2/graphene van der Waals heterostructures. NATURE MATERIALS 2024:10.1038/s41563-024-01985-y. [PMID: 39191981 DOI: 10.1038/s41563-024-01985-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Accepted: 07/30/2024] [Indexed: 08/29/2024]
Abstract
Twist engineering has emerged as a powerful approach for modulating electronic properties in van der Waals heterostructures. While theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, experimental studies are lacking. Here, by performing spin precession experiments, we demonstrate tunability of the spin texture and associated spin-charge interconversion with twist angle in WSe2/graphene heterostructures. For specific twist angles, we detect a spin component radial with the electron's momentum, in addition to the standard orthogonal component. Our results show that the helicity of the spin texture can be reversed by twist angle, highlighting the critical role of the twist angle in the spin-orbit properties of WSe2/graphene heterostructures and paving the way for the development of spin-twistronic devices.
Collapse
Affiliation(s)
- Haozhe Yang
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China.
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
| | - Jozef Kimák
- Faculty of Mathematics and Physics, Charles University, Prague, Czech Republic
| | - Eva Schmoranzerová
- Faculty of Mathematics and Physics, Charles University, Prague, Czech Republic
| | - Eoin Dolan
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Zhendong Chi
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
- Centro de Física de Materiales and Materials Physics Center, Donostia-San Sebastian, Spain
| | - Petr Němec
- Faculty of Mathematics and Physics, Charles University, Prague, Czech Republic
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
| |
Collapse
|
3
|
Yu ZG. Spin-Charge Conversion in Chiral Polymers with Hopping Conduction. J Phys Chem Lett 2024; 15:7770-7774. [PMID: 39047155 DOI: 10.1021/acs.jpclett.4c01597] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/27/2024]
Abstract
Organic and biological materials are often chiral. Chiral polymers, as recent experiments indicate, facilitate spin-charge conversion: a charge current results in a spin polarization and vice versa, dubbed chirality-induced spin selectivity (CISS) and inverse CISS (ICISS). While CISS/ICISS in crystalline chiral systems such as tellurium can be understood in terms of their chirality- and spin-dependent band structure, such a picture becomes inapplicable to disordered chiral polymers, where carrier transport is via hopping rather than band conduction. Here, we develop a microscopic theory to describe CISS and ICISS in disordered chiral organics, in which chirality-induced geometric spin-orbit coupling leads to a purely geometric spin-dependent Berry phase in electron hops involving triads, whose orientations are dictated by the material's chirality. Our theory reveals a central role of spin-flip hopping, which suppresses CISS but enables ICISS.
Collapse
Affiliation(s)
- Zhi-Gang Yu
- Sivananthan Laboratories, Bolingbrook, Illinois 60440, United States
| |
Collapse
|
4
|
Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
Collapse
Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
| |
Collapse
|
5
|
He Z, Su J, Wang YT, Wang K, Wang JL, Li Y, Wang R, Chen QX, Jiang HJ, Hou ZH, Liu JW, Yu SH. Interfacial-Assembly-Induced In Situ Transformation from Aligned 1D Nanowires to Quasi-2D Nanofilms. J Am Chem Soc 2024; 146:19998-20008. [PMID: 38865282 DOI: 10.1021/jacs.4c03730] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
As the dimensionality of materials generally affects their characteristics, thin films composed of low-dimensional nanomaterials, such as nanowires (NWs) or nanoplates, are of great importance in modern engineering. Among various bottom-up film fabrication strategies, interfacial assembly of nanoscale building blocks holds great promise in constructing large-scale aligned thin films, leading to emergent or enhanced collective properties compared to individual building blocks. As for 1D nanostructures, the interfacial self-assembly causes the morphology orientation, effectively achieving anisotropic electrical, thermal, and optical conduction. However, issues such as defects between each nanoscale building block, crystal orientation, and homogeneity constrain the application of ordered films. The precise control of transdimensional synthesis and the formation mechanism from 1D to 2D are rarely reported. To meet this gap, we introduce an interfacial-assembly-induced interfacial synthesis strategy and successfully synthesize quasi-2D nanofilms via the oriented attachment of 1D NWs on the liquid interface. Theoretical sampling and simulation show that NWs on the liquid interface maintain their lowest interaction energy for the ordered crystal plane (110) orientation and then rearrange and attach to the quasi-2D nanofilm. This quasi-2D nanofilm shows enhanced electric conductivity and unique optical properties compared with its corresponding 1D geometry materials. Uncovering these growth pathways of the 1D-to-2D transition provides opportunities for future material design and synthesis at the interface.
Collapse
Affiliation(s)
- Zhen He
- Shenzhen Key Laboratory of Sustainable Biomimetic Materials, Department of Materials Science and Engineering, Institute of Innovative Materials, Southern University of Science and Technology Guangming Advanced Research Institute, Southern University of Science and Technology, Shenzhen 518055, China
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
| | - Jie Su
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemical Physics, iChEM, University of Science and Technology of China, Hefei 230026, China
| | - Yu-Tao Wang
- Shenzhen Key Laboratory of Sustainable Biomimetic Materials, Department of Materials Science and Engineering, Institute of Innovative Materials, Southern University of Science and Technology Guangming Advanced Research Institute, Southern University of Science and Technology, Shenzhen 518055, China
| | - Kang Wang
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
| | - Jin-Long Wang
- Shenzhen Key Laboratory of Sustainable Biomimetic Materials, Department of Materials Science and Engineering, Institute of Innovative Materials, Southern University of Science and Technology Guangming Advanced Research Institute, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yi Li
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
| | - Rui Wang
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
| | - Qing-Xia Chen
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
| | - Hui-Jun Jiang
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemical Physics, iChEM, University of Science and Technology of China, Hefei 230026, China
| | - Zhong-Huai Hou
- Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemical Physics, iChEM, University of Science and Technology of China, Hefei 230026, China
| | - Jian-Wei Liu
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
| | - Shu-Hong Yu
- Shenzhen Key Laboratory of Sustainable Biomimetic Materials, Department of Materials Science and Engineering, Institute of Innovative Materials, Southern University of Science and Technology Guangming Advanced Research Institute, Southern University of Science and Technology, Shenzhen 518055, China
- New Cornerstone Science Laboratory, Division of Nanomaterials & Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemistry, Institute of Biomimetic Materials & Chemistry, Anhui Engineering Laboratory of Biomimetic Materials, University of Science and Technology of China, Hefei 230026, China
| |
Collapse
|
6
|
Johansson A. Theory of spin and orbital Edelstein effects. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:423002. [PMID: 38955339 DOI: 10.1088/1361-648x/ad5e2b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2024] [Accepted: 07/01/2024] [Indexed: 07/04/2024]
Abstract
In systems with broken spatial inversion symmetry, such as surfaces, interfaces, or bulk systems lacking an inversion center, the application of a charge current can generate finite spin and orbital densities associated with a nonequilibrium magnetization, which is known as spin and orbital Edelstein effect (SEE and OEE), respectively. Early reports on this current-induced magnetization focus on two-dimensional Rashba systems, in which an in-plane nonequilibrium spin density is generated perpendicular to the applied charge current. However, until today, a large variety of materials have been theoretically predicted and experimentally demonstrated to exhibit a sizeable Edelstein effect, which comprises contributions from the spin as well as the orbital degrees of freedom, and whose associated magnetization may be out of plane, nonorthogonal, and even parallel to the applied charge current, depending on the system's particular symmetries. In this review, we give an overview on the most commonly used theoretical approaches for the discussion and prediction of the SEE and OEE. Further, we introduce a selection of the most intensely discussed materials exhibiting a finite Edelstein effect, and give a brief summary of common experimental techniques.
Collapse
Affiliation(s)
- Annika Johansson
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Saale), Germany
| |
Collapse
|
7
|
Wang L, Wang Y, Chu C, Hu J, Wu S, Ma Y. Chirality Determination of Nanocrystals by Electron Crystallography. J Phys Chem Lett 2024; 15:6896-6908. [PMID: 38935349 DOI: 10.1021/acs.jpclett.4c00978] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/28/2024]
Abstract
Chirality is a common phenomenon in nature and plays an important role in the properties of matter. The rational synthesis of chiral compounds and exploration of their applications in various fields require an unambiguous determination of their handedness. However, in many cases, determinations of the chiral crystal structure and chiral morphology have been a challenging task due to the lack of proper characterization methods, especially for nanosized crystals. Therefore, it is crucial to develop novel and efficient characterization methods. Owing to the strong interactions between matter and electrons, electron crystallography has become a powerful tool for structural analysis of nanomaterials. In recent years, methods based on electron crystallography, such as high-resolution electron microscopy imaging and electron diffraction, have been developed to unravel the chirality of nanomaterials. This brings new opportunities to the design, synthesis, and applications of versatile chiral nanomaterials. In this perspective, we summarize the recent methodology developments and ongoing research of electron crystallography for chiral structure and morphology determination of nanocrystals, including inorganic and organic materials, as well as highlight the potential and further improvement of these methods in the future.
Collapse
Affiliation(s)
- Lijin Wang
- School of Physical Science and Technology & Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Yao Wang
- School of Physical Science and Technology & Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Chaoyang Chu
- School of Physical Science and Technology & Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Junyi Hu
- School of Physical Science and Technology & Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Shitao Wu
- School of Physical Science and Technology & Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - Yanhang Ma
- School of Physical Science and Technology & Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai 201210, People's Republic of China
| |
Collapse
|
8
|
Cheng B, Gao Y, Zheng Z, Chen S, Liu Z, Zhang L, Zhu Q, Li H, Li L, Zeng C. Giant nonlinear Hall and wireless rectification effects at room temperature in the elemental semiconductor tellurium. Nat Commun 2024; 15:5513. [PMID: 38951497 PMCID: PMC11217359 DOI: 10.1038/s41467-024-49706-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Accepted: 06/17/2024] [Indexed: 07/03/2024] Open
Abstract
The second-order nonlinear Hall effect (NLHE) in non-centrosymmetric materials has recently drawn intense interest, since its inherent rectification could enable various device applications such as energy harvesting and wireless charging. However, previously reported NLHE systems normally suffer from relatively small Hall voltage outputs and/or low working temperatures. In this study, we report the observation of a pronounced NLHE in tellurium (Te) thin flakes at room temperature. Benefiting from the semiconductor nature of Te, the obtained nonlinear response can be readily enhanced through electrostatic gating, leading to a second-harmonic output at 300 K up to 2.8 mV. By utilizing such a giant NLHE, we further demonstrate the potential of Te as a wireless Hall rectifier within the radiofrequency range, which is manifested by the remarkable and tunable rectification effect also at room temperature. Extrinsic scattering is then revealed to be the dominant mechanism for the NLHE in Te, with symmetry breaking on the surface playing a key role. As a simple elemental semiconductor, Te provides an appealing platform to advance our understanding of nonlinear transport in solids and to develop NLHE-based electronic devices.
Collapse
Affiliation(s)
- Bin Cheng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Yang Gao
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zhi Zheng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Shuhang Chen
- Department of Electronic Engineering and Information Science, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Zheng Liu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Ling Zhang
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China
| | - Qi Zhu
- Department of Electronic Engineering and Information Science, University of Science and Technology of China, Hefei, Anhui, 230026, China
| | - Hui Li
- Institutes of Physical Science and Information Technology, Anhui University, Hefei, Anhui, 230601, China
| | - Lin Li
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China.
| | - Changgan Zeng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui, 230088, China.
| |
Collapse
|
9
|
Suárez-Rodríguez M, Martín-García B, Skowroński W, Staszek K, Calavalle F, Fert A, Gobbi M, Casanova F, Hueso LE. Microscale Chiral Rectennas for Energy Harvesting. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400729. [PMID: 38597368 DOI: 10.1002/adma.202400729] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 04/04/2024] [Indexed: 04/11/2024]
Abstract
Wireless radiofrequency rectifiers have the potential to power the billions of "Internet of Things" (IoT) devices currently in use by effectively harnessing ambient electromagnetic radiation. However, the current technology relies on the implementation of rectifiers based on Schottky diodes, which exhibit limited capabilities for high-frequency and low-power applications. Consequently, they require an antenna to capture the incoming signal and amplify the input power, thereby limiting the possibility of miniaturizing devices to the millimeter scale. Here, the authors report wireless rectification at the GHz range in a microscale device built on single chiral tellurium with extremely low input powers. By studying the crystal symmetry and the temperature dependence of the rectification, the authors demonstrate that its origin is the intrinsic nonlinear conductivity of the material. Additionally, the unprecedented ability to modulate the rectification output by an electrostatic gate is shown. These results open the path to developing tuneable microscale wireless rectifiers with a single material.
Collapse
Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
| | - Witold Skowroński
- Institute of Electronics, AGH University of Krakow, Kraków, 30-059, Poland
| | - Kamil Staszek
- Institute of Electronics, AGH University of Krakow, Kraków, 30-059, Poland
| | | | - Albert Fert
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
- Donostia International Physics Center (DIPC), Donostia-San Sebastián, Basque Country, 20018, Spain
- Department of Advanced Polymers and Materials: Physics, Chemistry and Technology, Univesity of the Basque Country (UPV/EHU), Donostia-San Sebastián, Basque Country, 20018, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
- Centro de Física de Materiales (CSIC-UPV/EHU) and Materials Physics Center (MPC), Donostia-San Sebastián, Basque Country, 20018, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
| |
Collapse
|
10
|
Sun R, Park KS, Comstock AH, McConnell A, Chen YC, Zhang P, Beratan D, You W, Hoffmann A, Yu ZG, Diao Y, Sun D. Inverse chirality-induced spin selectivity effect in chiral assemblies of π-conjugated polymers. NATURE MATERIALS 2024; 23:782-789. [PMID: 38491147 DOI: 10.1038/s41563-024-01838-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/02/2023] [Accepted: 02/14/2024] [Indexed: 03/18/2024]
Abstract
Coupling of spin and charge currents to structural chirality in non-magnetic materials, known as chirality-induced spin selectivity, is promising for application in spintronic devices at room temperature. Although the chirality-induced spin selectivity effect has been identified in various chiral materials, its Onsager reciprocal process, the inverse chirality-induced spin selectivity effect, remains unexplored. Here we report the observation of the inverse chirality-induced spin selectivity effect in chiral assemblies of π-conjugated polymers. Using spin-pumping techniques, the inverse chirality-induced spin selectivity effect enables quantification of the magnitude of the longitudinal spin-to-charge conversion driven by chirality-induced spin selectivity in different chiral polymers. By widely tuning conductivities and supramolecular chiral structures via a printing method, we found a very long spin relaxation time of up to several nanoseconds parallel to the chiral axis. Our demonstration of the inverse chirality-induced spin selectivity effect suggests possibilities for elucidating the puzzling interplay between spin and chirality, and opens a route for spintronic applications using printable chiral assemblies.
Collapse
Affiliation(s)
- Rui Sun
- Department of Physics and Organic and Carbon Electronics Lab (ORaCEL), North Carolina State University, Raleigh, NC, USA
| | - Kyung Sun Park
- Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA
| | - Andrew H Comstock
- Department of Physics and Organic and Carbon Electronics Lab (ORaCEL), North Carolina State University, Raleigh, NC, USA
| | - Aeron McConnell
- Department of Physics and Organic and Carbon Electronics Lab (ORaCEL), North Carolina State University, Raleigh, NC, USA
| | - Yen-Chi Chen
- Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA
| | - Peng Zhang
- Department of Chemistry, Duke University, Durham, NC, USA
| | - David Beratan
- Department of Chemistry, Duke University, Durham, NC, USA
| | - Wei You
- Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, NC, USA
| | - Axel Hoffmann
- Department of Materials Science & Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, USA
| | - Zhi-Gang Yu
- Sivananthan Laboratories, Bolingbrook, Illinois, USA
| | - Ying Diao
- Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA.
| | - Dali Sun
- Department of Physics and Organic and Carbon Electronics Lab (ORaCEL), North Carolina State University, Raleigh, NC, USA.
| |
Collapse
|
11
|
Brinkman SS, Tan XL, Brekke B, Mathisen AC, Finnseth Ø, Schenk RJ, Hagiwara K, Huang MJ, Buck J, Kalläne M, Hoesch M, Rossnagel K, Ou Yang KH, Lin MT, Shu GJ, Chen YJ, Tusche C, Bentmann H. Chirality-Driven Orbital Angular Momentum and Circular Dichroism in CoSi. PHYSICAL REVIEW LETTERS 2024; 132:196402. [PMID: 38804933 DOI: 10.1103/physrevlett.132.196402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2024] [Accepted: 03/20/2024] [Indexed: 05/29/2024]
Abstract
Chiral crystals and molecules were recently predicted to form an intriguing platform for unconventional orbital physics. Here, we report the observation of chirality-driven orbital textures in the bulk electronic structure of CoSi, a prototype member of the cubic B20 family of chiral crystals. Using circular dichroism in soft x-ray angle-resolved photoemission, we demonstrate the formation of a bulk orbital-angular-momentum texture and monopolelike orbital-momentum locking that depends on crystal handedness. We introduce the intrinsic chiral circular dichroism, icCD, as a differential photoemission observable and a natural probe of chiral electron states. Our findings render chiral crystals promising for spin-orbitronics applications.
Collapse
Affiliation(s)
- Stefanie Suzanne Brinkman
- Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, 7491 Trondheim, Norway
| | - Xin Liang Tan
- Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, 7491 Trondheim, Norway
- Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich, Jülich 52425, Germany
- Faculty of Physics, University of Duisburg-Essen, Duisburg 47057, Germany
| | - Bjørnulf Brekke
- Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, 7491 Trondheim, Norway
| | - Anders Christian Mathisen
- Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, 7491 Trondheim, Norway
| | - Øyvind Finnseth
- Department of Materials Science and Engineering, Norwegian University of Science and Technology, 7491 Trondheim, Norway
| | - Richard Justin Schenk
- Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, 7491 Trondheim, Norway
| | - Kenta Hagiwara
- Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich, Jülich 52425, Germany
- Faculty of Physics, University of Duisburg-Essen, Duisburg 47057, Germany
| | - Meng-Jie Huang
- Ruprecht Haensel Laboratory, Kiel University, 24098 Kiel, Germany
- Ruprecht Haensel Laboratory, DESY, 22607 Hamburg, Germany
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, 22607 Hamburg, Germany
| | - Jens Buck
- Ruprecht Haensel Laboratory, Kiel University, 24098 Kiel, Germany
- Ruprecht Haensel Laboratory, DESY, 22607 Hamburg, Germany
- Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany
| | - Matthias Kalläne
- Ruprecht Haensel Laboratory, Kiel University, 24098 Kiel, Germany
- Ruprecht Haensel Laboratory, DESY, 22607 Hamburg, Germany
- Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany
| | - Moritz Hoesch
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, 22607 Hamburg, Germany
| | - Kai Rossnagel
- Ruprecht Haensel Laboratory, Kiel University, 24098 Kiel, Germany
- Ruprecht Haensel Laboratory, DESY, 22607 Hamburg, Germany
- Deutsches Elektronen-Synchrotron DESY, Notkestraße 85, 22607 Hamburg, Germany
- Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, 24098 Kiel, Germany
| | - Kui-Hon Ou Yang
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Minn-Tsong Lin
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
- Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
| | - Guo-Jiun Shu
- Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Ying-Jiun Chen
- Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich, Jülich 52425, Germany
- Faculty of Physics, University of Duisburg-Essen, Duisburg 47057, Germany
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Christian Tusche
- Peter Grünberg Institut (PGI-6), Forschungszentrum Jülich, Jülich 52425, Germany
- Faculty of Physics, University of Duisburg-Essen, Duisburg 47057, Germany
| | - Hendrik Bentmann
- Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology, 7491 Trondheim, Norway
| |
Collapse
|
12
|
Krieger JA, Stolz S, Robredo I, Manna K, McFarlane EC, Date M, Pal B, Yang J, B Guedes E, Dil JH, Polley CM, Leandersson M, Shekhar C, Borrmann H, Yang Q, Lin M, Strocov VN, Caputo M, Watson MD, Kim TK, Cacho C, Mazzola F, Fujii J, Vobornik I, Parkin SSP, Bradlyn B, Felser C, Vergniory MG, Schröter NBM. Weyl spin-momentum locking in a chiral topological semimetal. Nat Commun 2024; 15:3720. [PMID: 38697958 PMCID: PMC11066003 DOI: 10.1038/s41467-024-47976-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/27/2023] [Accepted: 04/17/2024] [Indexed: 05/05/2024] Open
Abstract
Spin-orbit coupling in noncentrosymmetric crystals leads to spin-momentum locking - a directional relationship between an electron's spin angular momentum and its linear momentum. Isotropic orthogonal Rashba spin-momentum locking has been studied for decades, while its counterpart, isotropic parallel Weyl spin-momentum locking has remained elusive in experiments. Theory predicts that Weyl spin-momentum locking can only be realized in structurally chiral cubic crystals in the vicinity of Kramers-Weyl or multifold fermions. Here, we use spin- and angle-resolved photoemission spectroscopy to evidence Weyl spin-momentum locking of multifold fermions in the chiral topological semimetal PtGa. We find that the electron spin of the Fermi arc surface states is orthogonal to their Fermi surface contour for momenta close to the projection of the bulk multifold fermion at the Γ point, which is consistent with Weyl spin-momentum locking of the latter. The direct measurement of the bulk spin texture of the multifold fermion at the R point also displays Weyl spin-momentum locking. The discovery of Weyl spin-momentum locking may lead to energy-efficient memory devices and Josephson diodes based on chiral topological semimetals.
Collapse
Affiliation(s)
- Jonas A Krieger
- Max Planck Institut für Mikrostrukturphysik, Weinberg 2, 06120, Halle, Germany
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232, Villigen PSI, Switzerland
| | - Samuel Stolz
- Department of Physics, University of California, Berkeley, CA, USA
- nanotech@surfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600, Dübendorf, Switzerland
| | - Iñigo Robredo
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
- Donostia International Physics Center, 20018, Donostia - San Sebastian, Spain
| | - Kaustuv Manna
- Indian Institute of Technology-Delhi, Hauz Khas, New Delhi, 110 016, India
| | - Emily C McFarlane
- Max Planck Institut für Mikrostrukturphysik, Weinberg 2, 06120, Halle, Germany
| | - Mihir Date
- Max Planck Institut für Mikrostrukturphysik, Weinberg 2, 06120, Halle, Germany
| | - Banabir Pal
- Max Planck Institut für Mikrostrukturphysik, Weinberg 2, 06120, Halle, Germany
| | - Jiabao Yang
- Max Planck Institut für Mikrostrukturphysik, Weinberg 2, 06120, Halle, Germany
| | - Eduardo B Guedes
- Photon Science Division, Paul Scherrer Institute, 5232, Villigen PSI, Switzerland
- Institut de Physique, École Polytechnique Fédérale de Lausanne, 1015, Lausanne, Switzerland
| | - J Hugo Dil
- Photon Science Division, Paul Scherrer Institute, 5232, Villigen PSI, Switzerland
- Institut de Physique, École Polytechnique Fédérale de Lausanne, 1015, Lausanne, Switzerland
| | - Craig M Polley
- MAX IV Laboratory, Lund University, Fotongatan 2, 22484, Lund, Sweden
| | - Mats Leandersson
- MAX IV Laboratory, Lund University, Fotongatan 2, 22484, Lund, Sweden
| | - Chandra Shekhar
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Horst Borrmann
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Qun Yang
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Mao Lin
- Department of Physics, University of Illinois, Urbana-Champaign, USA
| | - Vladimir N Strocov
- Photon Science Division, Paul Scherrer Institute, 5232, Villigen PSI, Switzerland
| | - Marco Caputo
- Photon Science Division, Paul Scherrer Institute, 5232, Villigen PSI, Switzerland
| | - Matthew D Watson
- Diamond Light Source Ltd, Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK
| | - Timur K Kim
- Diamond Light Source Ltd, Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK
| | - Cephise Cacho
- Diamond Light Source Ltd, Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK
| | - Federico Mazzola
- Istituto Officina dei Materiali, Consiglio Nazionale delle Ricerche, Trieste, I-34149, Italy
- Department of Molecular Sciences and Nanosystems, Ca' Foscari University of Venice, 30172, Venice, Italy
| | - Jun Fujii
- CNR-IOM, Area Science Park, Strada Statale 14 km 163.5, I-34149, Trieste, Italy
| | - Ivana Vobornik
- CNR-IOM, Area Science Park, Strada Statale 14 km 163.5, I-34149, Trieste, Italy
| | - Stuart S P Parkin
- Max Planck Institut für Mikrostrukturphysik, Weinberg 2, 06120, Halle, Germany
| | - Barry Bradlyn
- Department of Physics, University of Illinois, Urbana-Champaign, USA
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Maia G Vergniory
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
- Donostia International Physics Center, 20018, Donostia - San Sebastian, Spain
| | - Niels B M Schröter
- Max Planck Institut für Mikrostrukturphysik, Weinberg 2, 06120, Halle, Germany.
| |
Collapse
|
13
|
Qi J, Dai Y, Ma C, Ke C, Wang W, Wu Z, Wang X, Bao K, Xu Y, Huang H, Wang L, Wu J, Luo G, Chen Y, Lin Z, He Q. Surfactant-Free Ultrasonication-Assisted Synthesis of 2d Tellurium Based on Metastable 1T'-MoTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306962. [PMID: 37652747 DOI: 10.1002/adma.202306962] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 08/21/2023] [Indexed: 09/02/2023]
Abstract
Elemental 2D materials (E2DMs) have been attracting considerable attention owing to their chemical simplicity and excellent/exotic properties. However, the lack of robust chemical synthetic methods seriously limits their potential. Here, a surfactant-free liquid-phase synthesis of high-quality 2D tellurium is reported based on ultrasonication-assisted exfoliation of metastable 1T'-MoTe2. The as-grown 2D tellurium nanosheets exhibit excellent single crystallinity, ideal 2D morphology, surfactant-free surface, and negligible 1D by-products. Furthermore, a unique growth mechanism based on the atomic escape of Te atoms from metastable transition metal dichalcogenides and guided 2D growth in the liquid phase is proposed and verified. 2D tellurium-based field-effect transistors show ultrahigh hole mobility exceeding 1000 cm2 V-1 s-1 at room temperature attributing to the high crystallinity and surfactant-free surface, and exceptional chemical and operational stability using both solid-state dielectric and liquid-state electrical double layer. The facile ultrasonication-assisted synthesis of high-quality 2D tellurium paves the way for further exploration of E2DMs and expands the scope of liquid-phase exfoliation (LPE) methodology toward the controlled wet-chemical synthesis of functional nanomaterials.
Collapse
Affiliation(s)
- Junlei Qi
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, 100084, China
| | - Chen Ma
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, NT, Hong Kong, 999077, China
| | - Chengxuan Ke
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Wenbin Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Zongxiao Wu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Xiang Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Kai Bao
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Yue Xu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Lingzhi Wang
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Jingkun Wu
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| | - Guangfu Luo
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, NT, Hong Kong, 999077, China
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, 999077, China
| |
Collapse
|
14
|
Lim S, Singh S, Huang FT, Pan S, Wang K, Kim J, Kim J, Vanderbilt D, Cheong SW. Magnetochiral tunneling in paramagnetic Co 1/3NbS 2. Proc Natl Acad Sci U S A 2024; 121:e2318443121. [PMID: 38412131 PMCID: PMC10927506 DOI: 10.1073/pnas.2318443121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 01/25/2024] [Indexed: 02/29/2024] Open
Abstract
Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the non-linear anomalous Hall effect in polar crystals and the nonreciprocal directional dichroism in chiral crystals when magnetic fields are applied. In this work, we demonstrate that the same underlying physics is also manifested in the electronic tunneling process between the surface of a nonmagnetic chiral material and a magnetized scanning probe. In the paramagnetic but chiral metallic compound Co1/3NbS2, the magnetization induced by the tunneling current is shown to become detectable by its coupling to the magnetization of the tip itself. This results in a contrast across different chiral domains, achieving atomic-scale spatial resolution of structural chirality. To support the proposed mechanism, we used first-principles theory to compute the chirality-dependent current-induced magnetization and Berry curvature in the bulk of the material. Our demonstration of this magnetochiral tunneling effect opens up an avenue for investigating atomic-scale variations in the local crystallographic symmetry and electronic structure across the structural domain boundaries of low-symmetry nonmagnetic crystals.
Collapse
Affiliation(s)
- Seongjoon Lim
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ08854
| | - Sobhit Singh
- Department of Mechanical Engineering, University of Rochester, Rochester, NY14627
- Materials Science Program, University of Rochester, Rochester, NY14627
| | - Fei-Ting Huang
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ08854
| | - Shangke Pan
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ08854
- State Key Laboratory Base of Novel Function Materials and Preparation Science, School of Material Sciences and Chemical Engineering, Ningbo University, Ningbo315211, China
| | - Kefeng Wang
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ08854
| | - Jaewook Kim
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ08854
| | - Jinwoong Kim
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ08854
| | - David Vanderbilt
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ08854
| | - Sang-Wook Cheong
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ08854
| |
Collapse
|
15
|
Bloom BP, Paltiel Y, Naaman R, Waldeck DH. Chiral Induced Spin Selectivity. Chem Rev 2024; 124:1950-1991. [PMID: 38364021 PMCID: PMC10906005 DOI: 10.1021/acs.chemrev.3c00661] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Revised: 01/16/2024] [Accepted: 01/23/2024] [Indexed: 02/18/2024]
Abstract
Since the initial landmark study on the chiral induced spin selectivity (CISS) effect in 1999, considerable experimental and theoretical efforts have been made to understand the physical underpinnings and mechanistic features of this interesting phenomenon. As first formulated, the CISS effect refers to the innate ability of chiral materials to act as spin filters for electron transport; however, more recent experiments demonstrate that displacement currents arising from charge polarization of chiral molecules lead to spin polarization without the need for net charge flow. With its identification of a fundamental connection between chiral symmetry and electron spin in molecules and materials, CISS promises profound and ubiquitous implications for existing technologies and new approaches to answering age old questions, such as the homochiral nature of life. This review begins with a discussion of the different methods for measuring CISS and then provides a comprehensive overview of molecules and materials known to exhibit CISS-based phenomena before proceeding to identify structure-property relations and to delineate the leading theoretical models for the CISS effect. Next, it identifies some implications of CISS in physics, chemistry, and biology. The discussion ends with a critical assessment of the CISS field and some comments on its future outlook.
Collapse
Affiliation(s)
- Brian P. Bloom
- Department
of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Yossi Paltiel
- Applied
Physics Department and Center for Nano-Science and Nano-Technology, The Hebrew University of Jerusalem, Jerusalem 9190401, Israel
| | - Ron Naaman
- Department
of Chemical and Biological Physics, Weizmann
Institute, Rehovot 76100, Israel
| | - David H. Waldeck
- Department
of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| |
Collapse
|
16
|
Jeong BJ, Choi KH, Lee B, Cho S, Kang J, Zhang X, Kim Y, Jeon J, Bang HS, Oh HS, Lee JH, Yu HK, Choi JY. Tailoring Contacts for High-Performance 1D Ta 2Pt 3S 8 Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:7593-7603. [PMID: 38315799 DOI: 10.1021/acsami.3c17204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
Materials with van der Waals (vdW) unit structures rely on weak interunit vdW forces, facilitating physical separation and advancing nanomaterial research with remarkable electrical properties. Recently, there has been growing interest in one-dimensional (1D) vdW materials, celebrated for their advantageous properties, characterized by reduced dimensionality and the absence of dangling bonds. In this context, we synthesize Ta2Pt3S8, a 1D vdW material, and assess its suitability for field-effect transistor (FET) applications. Spectroscopic analysis and electrical characterization confirmed that the band gap and work function of Ta2Pt3S8 are 1.18 and 4.77 eV, respectively. Leveraging various electrode materials, we fabricated n-type FETs based on Ta2Pt3S8 and identified Cr as the optimal electrode, exhibiting a high mobility of 57 cm2 V-1 s-1. In addition, we analyzed the electron transport mechanism in n-type FETs by investigating Schottky barrier height, Schottky barrier tunneling width, and contact resistance. Furthermore, we successfully fabricated p-type operating Ta2Pt3S8 FETs using a molybdenum trioxide (MoO3) layer as a high work function contact electrode. Finally, we achieved Ta2Pt3S8 nanowire rectifying diodes by creating a p-n junction with asymmetric contact electrodes of Cr and MoO3, demonstrating an ideality factor of 1.06. These findings highlight the electronic properties of Ta2Pt3S8, positioning it as a promising 1D vdW material for future nanoelectronics and functional vdW-based device applications.
Collapse
Affiliation(s)
- Byung Joo Jeong
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kyung Hwan Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Bom Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sooheon Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jinsu Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Xiaojie Zhang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Youngho Kim
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jiho Jeon
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyeon-Seok Bang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Clean Energy Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Hyung-Suk Oh
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Clean Energy Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae-Hyun Lee
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Hak Ki Yu
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jae-Young Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
| |
Collapse
|
17
|
Suárez-Rodríguez M, Martín-García B, Skowroński W, Calavalle F, Tsirkin SS, Souza I, De Juan F, Chuvilin A, Fert A, Gobbi M, Casanova F, Hueso LE. Odd Nonlinear Conductivity under Spatial Inversion in Chiral Tellurium. PHYSICAL REVIEW LETTERS 2024; 132:046303. [PMID: 38335368 DOI: 10.1103/physrevlett.132.046303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 12/13/2023] [Indexed: 02/12/2024]
Abstract
Electrical transport in noncentrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a nonlinear conductivity emerges along specific crystallographic directions. This nonlinear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an inversion symmetry operation on the nonlinear conductivity remain to be explored. Here, we report on a large, nonlinear conductivity in chiral tellurium. By measuring samples with opposite handedness, we demonstrate that the nonlinear transport is odd under spatial inversion. Furthermore, by applying an electrostatic gate, we modulate the nonlinear output by a factor of 300, reaching the highest reported value excluding engineered heterostructures. Our results establish chiral tellurium as an ideal compound not just to study the fundamental interplay between crystal structure, symmetry operations and nonlinear transport; but also to develop wireless rectifiers and energy-harvesting chiral devices.
Collapse
Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Witold Skowroński
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- AGH University of Krakow, Institute of Electronics, 30-059 Kraków, Poland
| | - F Calavalle
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Stepan S Tsirkin
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Ivo Souza
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fernando De Juan
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Andrey Chuvilin
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Albert Fert
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department of Materials Physics UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| |
Collapse
|
18
|
Wang X, Yi C, Felser C. Chiral Quantum Materials: When Chemistry Meets Physics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2308746. [PMID: 38126622 DOI: 10.1002/adma.202308746] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Revised: 12/01/2023] [Indexed: 12/23/2023]
Abstract
Chirality is a fundamental property of nature with relevance in biochemistry and physics, particularly in the field of catalysis. Understanding the mechanisms underlying chirality transfer is crucial for advancing the knowledge of chiral-related catalysis. Chiral quantum materials with intriguing chirality-dependent electronic properties, such as spin-orbital coupling (SOC) and exotic spin/orbital angular momentum (SAM/OAM), open novel avenues for linking solid-state topologies with chiral catalysis. In this review, the growth of topological homochiral crystals (THCs) is described, and their applications in heterogeneous catalysis, including hydrogen evolution reaction (HER), oxygen electrocatalysis, and asymmetric catalysis are summarized. A possible link between chirality-dependent electronic properties and heterogeneous catalysis is discussed. Finally, existing challenges in this field are highlighted, and a brief outlook on the impact of THCs on the overarching chemical-physical research is presented.
Collapse
Affiliation(s)
- Xia Wang
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| | - Changjiang Yi
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| |
Collapse
|
19
|
Yang Q, Xiao J, Robredo I, Vergniory MG, Yan B, Felser C. Monopole-like orbital-momentum locking and the induced orbital transport in topological chiral semimetals. Proc Natl Acad Sci U S A 2023; 120:e2305541120. [PMID: 37983495 PMCID: PMC10691347 DOI: 10.1073/pnas.2305541120] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Accepted: 10/20/2023] [Indexed: 11/22/2023] Open
Abstract
The interplay between chirality and topology nurtures many exotic electronic properties. For instance, topological chiral semimetals display multifold chiral fermions that manifest nontrivial topological charge and spin texture. They are an ideal playground for exploring chirality-driven exotic physical phenomena. In this work, we reveal a monopole-like orbital-momentum locking texture on the three-dimensional Fermi surfaces of topological chiral semimetals with B20 structures (e.g., RhSi and PdGa). This orbital texture enables a large orbital Hall effect (OHE) and a giant orbital magnetoelectric (OME) effect in the presence of current flow. Different enantiomers exhibit the same OHE which can be converted to the spin Hall effect by spin-orbit coupling in materials. In contrast, the OME effect is chirality-dependent and much larger than its spin counterpart. Our work reveals the crucial role of orbital texture for understanding OHE and OME effects in topological chiral semimetals and paves the path for applications in orbitronics, spintronics, and enantiomer recognition.
Collapse
Affiliation(s)
- Qun Yang
- Max Planck Institute for Chemical Physics of Solids, Dresden01187, Germany
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot7610001, Israel
| | - Jiewen Xiao
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot7610001, Israel
| | - Iñigo Robredo
- Max Planck Institute for Chemical Physics of Solids, Dresden01187, Germany
- Donostia International Physics Center, Donostia-San Sebastian20018, Spain
| | - Maia G. Vergniory
- Max Planck Institute for Chemical Physics of Solids, Dresden01187, Germany
- Donostia International Physics Center, Donostia-San Sebastian20018, Spain
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot7610001, Israel
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, Dresden01187, Germany
| |
Collapse
|
20
|
Szary MJ. Rashba effect: a chemical physicist's approach. Phys Chem Chem Phys 2023; 25:30099-30115. [PMID: 37920992 DOI: 10.1039/d3cp04242a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/04/2023]
Abstract
Understanding the mechanisms underlying the emergence of giant spin splitting (GSS) is fundamental in the pursuit of more robust strategies for designing materials with desired spin splitting. This drive for material innovation continues to captivate a burgeoning community of early-career researchers with backgrounds in chemistry and material science. However, new to the field, they are often equipped only with the insight provided by the original Bychkov-Rashba model. Furthermore, daunted by the tight-binding perspective on the non-vanishing orbital angular momentum (OAM), they struggle to accurately account for the atomic spin-orbit interaction (SOI) in the formation of GSS. To address these challenges and equip young chemists with better-suited tools, this review aims to provide a more intuitive perspective on atomic interactions (orbital hybridization), structure symmetry, and atomic SOI in the formation of GSS. In pursuit of this goal, the review explores the Bychkov-Rashba model, its advantages, and limitations. Subsequently, it introduces the orbital framework, wherein GSS is modulated by atomic SOI and the interplay of OAM with the surface electrostatic field. Given the explicit dependence of both these factors on OAM, the review examines why OAM is typically quenched in crystal structures and how chemical bonds involving different orbital types can lead to its non-zero values in the presence of inversion symmetry breaking. Finally, with this chemistry-focused perspective, the review examines the rise of GSS in selected examples.
Collapse
Affiliation(s)
- Maciej J Szary
- Institute of Physics, Poznan University of Technology, ul. Piotrowo 3, 61-138 Poznan, Poland.
| |
Collapse
|
21
|
Jo J, Peisen Y, Yang H, Mañas-Valero S, Baldoví JJ, Lu Y, Coronado E, Casanova F, Bergeret FS, Gobbi M, Hueso LE. Local control of superconductivity in a NbSe 2/CrSBr van der Waals heterostructure. Nat Commun 2023; 14:7253. [PMID: 37945570 PMCID: PMC10636142 DOI: 10.1038/s41467-023-43111-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Accepted: 10/31/2023] [Indexed: 11/12/2023] Open
Abstract
Two-dimensional magnets and superconductors are emerging as tunable building-blocks for quantum computing and superconducting spintronic devices, and have been used to fabricate all two-dimensional versions of traditional devices, such as Josephson junctions. However, novel devices enabled by unique features of two-dimensional materials have not yet been demonstrated. Here, we present NbSe2/CrSBr van der Waals superconducting spin valves that exhibit infinite magnetoresistance and nonreciprocal charge transport. These responses arise from a unique metamagnetic transition in CrSBr, which controls the presence of localized stray fields suitably oriented to suppress the NbSe2 superconductivity in nanoscale regions and to break time reversal symmetry. Moreover, by integrating different CrSBr crystals in a lateral heterostructure, we demonstrate a superconductive spin valve characterized by multiple stable resistance states. Our results show how the unique physical properties of layered materials enable the realization of high-performance quantum devices based on novel working principles.
Collapse
Affiliation(s)
- Junhyeon Jo
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
| | - Yuan Peisen
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Haozhe Yang
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - José J Baldoví
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - Yao Lu
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
| | - F Sebastian Bergeret
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain
- Donostia International Physics Center (DIPC), E-20018, Donostia-San Sebastián, Spain
| | - Marco Gobbi
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
| |
Collapse
|
22
|
Kim B, Shin D, Namgung S, Park N, Kim KW, Kim J. Optoelectronic Manifestation of Orbital Angular Momentum Driven by Chiral Hopping in Helical Se Chains. ACS NANO 2023; 17:18873-18882. [PMID: 37772489 DOI: 10.1021/acsnano.3c03893] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/30/2023]
Abstract
Chiral materials have garnered significant attention in the field of condensed matter physics. Nevertheless, the magnetic moment induced by the chiral spatial motion of electrons in helical materials, such as elemental Te and Se, remains inadequately understood. In this work, we investigate the development of quantum angular momentum enforced by chirality by using static and time-dependent density functional theory calculations for an elemental Se chain. Our findings reveal the emergence of an unconventional orbital texture driven by the chiral geometry, giving rise to a nonvanishing current-induced orbital moment. By incorporating spin-orbit coupling, we demonstrate that current-induced spin accumulation arises in the chiral chain, which fundamentally differs from the conventional Edelstein effect. Furthermore, we demonstrate optoelectronic detection of the orbital angular momentum in the chiral Se chain, providing an alternative to the interband Berry curvature, which is ill-defined in low dimensions.
Collapse
Affiliation(s)
- Bumseop Kim
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Dongbin Shin
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, Korea
- Max Planck Institute for the Structure and Dynamics of Matter and Center for Free Electron Laser Science, Hamburg 22761, Germany
| | - Seon Namgung
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Noejung Park
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
- Department of Physics, Ulsan National Institute of Science and Technology, Ulsan 44919, Korea
| | - Kyoung-Whan Kim
- Center for Spintronics, Korea Institute of Science and Technology, Seoul 02792, Korea
| | - Jeongwoo Kim
- Department of Physics, Incheon National University, Incheon 22012, Korea
| |
Collapse
|
23
|
Niu C, Qiu G, Wang Y, Tan P, Wang M, Jian J, Wang H, Wu W, Ye PD. Tunable Chirality-Dependent Nonlinear Electrical Responses in 2D Tellurium. NANO LETTERS 2023; 23:8445-8453. [PMID: 37677143 DOI: 10.1021/acs.nanolett.3c01797] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/09/2023]
Abstract
Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by a solution-based method shows excellent electrical, optical, and thermal properties. In this work, the chirality of hydrothermally grown 2D Te is identified and analyzed by hot sulfuric acid etching and high-angle tilted high-resolution scanning transmission electron microscopy. The gate-tunable nonlinear electrical responses, including the nonreciprocal electrical transport in the longitudinal direction and the nonlinear planar Hall effect in the transverse direction, are observed in 2D Te under a magnetic field. Moreover, the nonlinear electrical responses have opposite signs in left- and right-handed 2D Te due to the opposite spin polarizations ensured by the chiral symmetry. The fundamental relationship between the spin-orbit coupling and the crystal symmetry in two enantiomers provides a viable platform for realizing chirality-based electronic devices by introducing the degree of freedom of chirality into electron transport.
Collapse
Affiliation(s)
- Chang Niu
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Gang Qiu
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Yixiu Wang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Pukun Tan
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| | - Mingyi Wang
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Jie Jian
- School of Materials Science and Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Haiyan Wang
- School of Materials Science and Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Wenzhuo Wu
- School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Peide D Ye
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
| |
Collapse
|
24
|
Fu W, Tan L, Wang PP. Chiral Inorganic Nanomaterials for Photo(electro)catalytic Conversion. ACS NANO 2023; 17:16326-16347. [PMID: 37540624 DOI: 10.1021/acsnano.3c04337] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/06/2023]
Abstract
Chiral inorganic nanomaterials due to their unique asymmetric nanostructures have gradually demonstrated intriguing chirality-dependent performance in photo(electro)catalytic conversion, such as water splitting. However, understanding the correlation between chiral inorganic characteristics and the photo(electro)catalytic process remains challenging. In this perspective, we first highlight the chirality source of inorganic nanomaterials and briefly introduce photo(electro)catalysis systems. Then, we delve into an in-depth discussion of chiral effects exerted by chiral nanostructures and their photo-electrochemistry properties, while emphasizing the emerging chiral inorganic nanomaterials for photo(electro)catalytic conversion. Finally, the challenges and opportunities of chiral inorganic nanomaterials for photo(electro)catalytic conversion are prospected. This perspective provides a comprehensive overview of chiral inorganic nanomaterials and their potential in photo(electro)catalytic conversion, which is beneficial for further research in this area.
Collapse
Affiliation(s)
- Wenlong Fu
- State Key Laboratory for Mechanical Behavior of Materials, Shaanxi International Research Center for Soft Matter, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Lili Tan
- State Key Laboratory for Mechanical Behavior of Materials, Shaanxi International Research Center for Soft Matter, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - Peng-Peng Wang
- State Key Laboratory for Mechanical Behavior of Materials, Shaanxi International Research Center for Soft Matter, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| |
Collapse
|
25
|
García-Blázquez MA, Dednam W, Palacios JJ. Nonequilibrium Magneto-Conductance as a Manifestation of Spin Filtering in Chiral Nanojunctions. J Phys Chem Lett 2023; 14:7931-7939. [PMID: 37646507 PMCID: PMC10494227 DOI: 10.1021/acs.jpclett.3c01922] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/12/2023] [Accepted: 08/10/2023] [Indexed: 09/01/2023]
Abstract
It is generally accepted that spin-dependent electron transmission may appear in chiral systems, even without magnetic components, as long as significant spin-orbit coupling is present in some of its elements. However, how this chirality-induced spin selectivity (CISS) manifests in experiments, where the system is taken out of equilibrium, is still debated. Aided by group theoretical considerations and nonequilibrium DFT-based quantum transport calculations, here we show that when spatial symmetries that forbid a finite spin polarization in equilibrium are broken, a net spin accumulation appears at finite bias in an arbitrary two-terminal nanojunction. Furthermore, when a suitably magnetized detector is introduced into the system, the net spin accumulation, in turn, translates into a finite magneto-conductance. The symmetry prerequisites are mostly analogous to those for the spin polarization at any bias with the vectorial nature given by the direction of magnetization, hence establishing an interconnection between these quantities.
Collapse
Affiliation(s)
- M. A. García-Blázquez
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| | - W. Dednam
- Department
of Physics, Science Campus, University of
South Africa, Florida
Park, Johannesburg 1710, South Africa
| | - J. J. Palacios
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
- Condensed
Matter Physics Center (IFIMAC), Universidad
Autónoma de Madrid, E-28049 Madrid, Spain
| |
Collapse
|
26
|
Kim C, Hur N, Yang J, Oh S, Yeo J, Jeong HY, Shong B, Suh J. Atomic Layer Deposition Route to Scalable, Electronic-Grade van der Waals Te Thin Films. ACS NANO 2023; 17:15776-15786. [PMID: 37432767 DOI: 10.1021/acsnano.3c03559] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/13/2023]
Abstract
Scalable production and integration techniques for van der Waals (vdW) layered materials are vital for their implementation in next-generation nanoelectronics. Among available approaches, perhaps the most well-received is atomic layer deposition (ALD) due to its self-limiting layer-by-layer growth mode. However, ALD-grown vdW materials generally require high processing temperatures and/or additional postdeposition annealing steps for crystallization. Also, the collection of ALD-producible vdW materials is rather limited by the lack of a material-specific tailored process design. Here, we report the annealing-free wafer-scale growth of monoelemental vdW tellurium (Te) thin films using a rationally designed ALD process at temperatures as low as 50 °C. They exhibit exceptional homogeneity/crystallinity, precise layer controllability, and 100% step coverage, all of which are enabled by introducing a dual-function co-reactant and adopting a so-called repeating dosing technique. Electronically, vdW-coupled and mixed-dimensional vertical p-n heterojunctions with MoS2 and n-Si, respectively, are demonstrated with well-defined current rectification as well as spatial uniformity. Additionally, we showcase an ALD-Te-based threshold switching selector with fast switching time (∼40 ns), selectivity (∼104), and low Vth (∼1.3 V). This synthetic strategy allows the low-thermal-budget production of vdW semiconducting materials in a scalable fashion, thereby providing a promising approach for monolithic integration into arbitrary 3D device architectures.
Collapse
Affiliation(s)
- Changhwan Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Namwook Hur
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Jiho Yang
- Department of Chemical Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Saeyoung Oh
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Jeongin Yeo
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| | - Bonggeun Shong
- Department of Chemical Engineering, Hongik University, Seoul 04066, Republic of Korea
| | - Joonki Suh
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea
| |
Collapse
|
27
|
Liu K, Niu J, Liu L, Tian F, Nie H, Liu X, Chen K, Zhao R, Sun S, Jiao M, Tian M, Sun X, Niu L, Sun X, Wang H, Long W, Feng L, Mu X, Zhang XD. LUMO-Mediated Se and HOMO-Mediated Te Nanozymes for Selective Redox Biocatalysis. NANO LETTERS 2023; 23:5131-5140. [PMID: 37191492 DOI: 10.1021/acs.nanolett.3c01068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
Selenium (Se) and tellurium (Te) nanomaterials with novel chain-like structures have attracted widespread interest owing to their intriguing properties. Unfortunately, the still-unclear catalytic mechanisms have severely limited the development of biocatalytic performance. In this work, we developed chitosan-coated Se nanozymes with a 23-fold higher antioxidative activity than Trolox and bovine serum albumin coated Te nanozymes with stronger prooxidative biocatalytic effects. Based on density functional theory calculations, we first propose that the Se nanozyme with Se/Se2- active centers favored reactive oxygen species (ROS) clearance via a LUMO-mediated mechanism, while the Te nanozyme with Te/Te4+ active centers promoted ROS production through a HOMO-mediated mechanism. Furthermore, biological experiments confirmed that the survival rate of γ-irritated mice treated with the Se nanozyme was maintained at 100% for 30 days by inhibiting oxidation. However, the Te nanozyme had the opposite biological effect via promoting radiation oxidation. The present work provides a new strategy for improving the catalytic activities of Se and Te nanozymes.
Collapse
Affiliation(s)
- Kaijin Liu
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Jiaxue Niu
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Ling Liu
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Fangzhen Tian
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Hongmei Nie
- Tianjin Key Laboratory of Molecular Nuclear Medicine, Institute of Radiation Medicine, Chinese Academy of Medical Sciences and Peking Union Medical College, Tianjin 300192, People's Republic of China
| | - Xiaoyu Liu
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Ke Chen
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Ruoli Zhao
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Si Sun
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Menglu Jiao
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Maoye Tian
- Tianjin Key Laboratory of Molecular Nuclear Medicine, Institute of Radiation Medicine, Chinese Academy of Medical Sciences and Peking Union Medical College, Tianjin 300192, People's Republic of China
| | - Xinyu Sun
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Lanfei Niu
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Xinyi Sun
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Hao Wang
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Wei Long
- Tianjin Key Laboratory of Molecular Nuclear Medicine, Institute of Radiation Medicine, Chinese Academy of Medical Sciences and Peking Union Medical College, Tianjin 300192, People's Republic of China
| | - Liefeng Feng
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
| | - Xiaoyu Mu
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| | - Xiao-Dong Zhang
- Department of Physics and Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Sciences, Tianjin University, Tianjin 300350, People's Republic of China
- Tianjin International Joint Research Center for Neural Engineering, Academy of Medical Engineering and Translational Medicine, Tianjin University, Tianjin 300072, People's Republic of China
| |
Collapse
|
28
|
Zhang Y, Yang X, Dai Y, Yu W, Yang L, Zhang J, Yu Q, Dong Z, Huang L, Chen C, Hou X, Wang X, Li J, Zhang K. Ternary GePdS 3: 1D van der Waals Nanowires for Integration of High-Performance Flexible Photodetectors. ACS NANO 2023; 17:8743-8754. [PMID: 37104062 DOI: 10.1021/acsnano.3c01977] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
One-dimensional (1D) van der Waals (vdW) materials are anticipated to leverage for high-performance, giant polarized, and hybrid-dimension photodetection owing to their dangling-bond free surface, intrinsic crystal structure, and weak vdW interaction. However, only a few related explorations have been conducted, especially in the field of flexible and integrated applications. Here, high-quality 1D vdW GePdS3 nanowires were synthesized and proven to be an n-type semiconductor. The Raman vibration and band gap (1.37-1.68 eV, varying from bulk to single chain) of GePdS3 were systemically studied by experimental and theoretical methods. The photodetector based on a single GePdS3 nanowire possesses fast photoresponse at a broadband spectrum of 254-1550 nm. The highest responsivity and detectivity reach up to ∼219 A/W and ∼2.7 × 1010 Jones (under 254 nm light illumination), respectively. Furthermore, an image sensor with 6 × 6 pixels based on GePdS3 nanowires is integrated on a flexible polyethylene terephthalate (PET) substrate and exhibits sensitive and homogeneous detection at 808 nm light. These results indicate that the ternary noble metal chalcogenides show great potential in flexible and broadband optoelectronics applications.
Collapse
Affiliation(s)
- Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Xiaoxin Yang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
| | - Yongping Dai
- Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Guangdong 523000, P. R. China
- Institute of Physics, Chinese Academy of Science, Beijing 100190, P. R. China
| | - Liu Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Junrong Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
| | - Qiang Yu
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
| | - Zhuo Dong
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
| | - Luyi Huang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
| | - Cheng Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
- School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, P. R. China
| | - Xingang Hou
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
| | - Xiao Wang
- Shenzhen Key Laboratory of Nanobiomechanics, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, P. R. China
| | - Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, P. R. China
| |
Collapse
|
29
|
Torun G, Kishi T, Pugliese D, Milanese D, Bellouard Y. Formation Mechanism of Elemental Te Produced in Tellurite Glass Systems by Femtosecond Laser Irradiation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210446. [PMID: 36749876 DOI: 10.1002/adma.202210446] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2022] [Revised: 12/23/2022] [Indexed: 05/19/2023]
Abstract
The formation of elemental trigonal tellurium (t-Te) on tellurite glass surfaces exposed to femtosecond laser pulses is discussed. Specifically, the underlying elemental crystallization phenomenon is investigated by altering laser parameters in common tellurite glass compositions under various ambient conditions. Elemental crystallization of t-Te by a single femtosecond laser pulse is unveiled by high-resolution imaging and analysis. The thermal diffusion model reveals the absence of lattice melting upon a single laser pulse, highlighting the complexity of the phase transformation. The typical cross-section displays three different crystal configurations over its depth, in which the overall thickness increases with each subsequent pulse. The effect of various controlled atmospheres shows the suppressing nature of the elemental crystallization, whereas the substrate temperature shows no significant impact on the nucleation of t-Te nanocrystals. This research gives new insight into the elemental crystallization of glass upon femtosecond laser irradiation and shows the potential to fabricate functional transparent electronic micro/nanodevices.
Collapse
Affiliation(s)
- Gözden Torun
- Galatea Laboratory, STI/IEM, Ecole Polytechnique Fédérale de Lausanne (EPFL), 2002, Neuchâtel, Switzerland
| | - Tetsuo Kishi
- Department of Materials Science and Engineering, Tokyo Institute of Technology, Tokyo, 152-8552, Japan
| | - Diego Pugliese
- Department of Electronics and Telecommunications, Polytechnic University of Turin, 10129, Turin, Italy
- Department of Applied Science and Technology and INSTM RU, Polytechnic University of Turin, 10129, Turin, Italy
| | - Daniel Milanese
- Department of Engineering and Architecture and INSTM RU, University of Parma, 43124, Parma, Italy
| | - Yves Bellouard
- Galatea Laboratory, STI/IEM, Ecole Polytechnique Fédérale de Lausanne (EPFL), 2002, Neuchâtel, Switzerland
| |
Collapse
|
30
|
Dednam W, García-Blázquez MA, Zotti LA, Lombardi EB, Sabater C, Pakdel S, Palacios JJ. A Group-Theoretic Approach to the Origin of Chirality-Induced Spin-Selectivity in Nonmagnetic Molecular Junctions. ACS NANO 2023; 17:6452-6465. [PMID: 36947721 PMCID: PMC10100547 DOI: 10.1021/acsnano.2c11410] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/15/2022] [Accepted: 03/16/2023] [Indexed: 06/18/2023]
Abstract
Spin-orbit coupling gives rise to a range of spin-charge interconversion phenomena in nonmagnetic systems where certain spatial symmetries are reduced or absent. Chirality-induced spin-selectivity (CISS), a term that generically refers to a spin-dependent electron transfer in nonmagnetic chiral systems, is one such case, appearing in a variety of seemingly unrelated situations ranging from inorganic materials to molecular devices. In particular, the origin of CISS in molecular junctions is a matter of an intense current debate. Here, we derive a set of geometrical conditions for this effect to appear, hinting at the fundamental role of symmetries beyond otherwise relevant quantitative issues. Our approach, which draws on the use of point-group symmetries within the scattering formalism for transport, shows that electrode symmetries are as important as those of the molecule when it comes to the emergence of a spin-polarization and, by extension, to the possible appearance of CISS. It turns out that standalone metallic nanocontacts can exhibit spin-polarization when relative rotations which reduce the symmetry are introduced. As a corollary, molecular junctions with achiral molecules can also exhibit spin-polarization along the direction of transport, provided that the whole junction is chiral in a specific way. This formalism also allows the prediction of qualitative changes of the spin-polarization upon substitution of a chiral molecule in the junction with its enantiomeric partner. Quantum transport calculations based on density functional theory corroborate all of our predictions and provide further quantitative insight within the single-particle framework.
Collapse
Affiliation(s)
- W. Dednam
- Department
of Physics, Florida Science Campus, University
of South Africa, 1710 Johannesburg, South Africa
| | - M. A. García-Blázquez
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| | - Linda A. Zotti
- Departamento
de Física Teórica de la Materia Condensada, Universidad Autonoma de Madrid, E-28049 Madrid, Spain
- Condensed
Matter Physics Center (IFIMAC), Universidad
Autónoma de Madrid, E-28049 Madrid, Spain
| | - E. B. Lombardi
- Department
of Physics, Florida Science Campus, University
of South Africa, 1710 Johannesburg, South Africa
| | - C. Sabater
- Departamento
de Física Aplicada and Unidad asociada CSIC, Universidad de Alicante, E-03690 Alicante, Spain
| | - S. Pakdel
- CAMD, Department
of Physics, Technical University of Denmark, 2800 Lyngby, Denmark
| | - J. J. Palacios
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
- Instituto
Nicolás Cabrera (INC) and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| |
Collapse
|
31
|
Yokouchi T, Ikeda Y, Morimoto T, Shiomi Y. Giant Magnetochiral Anisotropy in Weyl Semimetal WTe_{2} Induced by Diverging Berry Curvature. PHYSICAL REVIEW LETTERS 2023; 130:136301. [PMID: 37067327 DOI: 10.1103/physrevlett.130.136301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2022] [Accepted: 03/08/2023] [Indexed: 06/19/2023]
Abstract
The concept of Berry curvature is essential for various transport phenomena. However, an effect of the Berry curvature on magnetochiral anisotropy, i.e., nonreciprocal magnetotransport, is still elusive. Here, we report that the Berry curvature induces the large magnetochiral anisotropy. In Weyl semimetal WTe_{2}, we observe the strong enhancement of the magnetochiral anisotropy when the Fermi level is located near the Weyl points. Notably, the maximal figure of merit γ[over ¯] reaches 1.2×10^{-6} m^{2} T^{-1} A^{-1}, which is the largest ever reported in bulk materials. Our semiclassical calculation shows that the diverging Berry curvature at the Weyl points strongly enhances the magnetochiral anisotropy.
Collapse
Affiliation(s)
- Tomoyuki Yokouchi
- Department of Basic Science, The University of Tokyo, Tokyo 152-8902, Japan
| | - Yuya Ikeda
- Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Takahiro Morimoto
- Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yuki Shiomi
- Department of Basic Science, The University of Tokyo, Tokyo 152-8902, Japan
| |
Collapse
|
32
|
Li J, Zhang J, Chu J, Yang L, Zhao X, Zhang Y, Liu T, Lu Y, Chen C, Hou X, Fang L, Xu Y, Wang J, Zhang K. Tailoring the epitaxial growth of oriented Te nanoribbon arrays. iScience 2023; 26:106177. [PMID: 36895655 PMCID: PMC9988655 DOI: 10.1016/j.isci.2023.106177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/18/2022] [Revised: 01/13/2023] [Accepted: 02/07/2023] [Indexed: 02/11/2023] Open
Abstract
As an elemental semiconductor, tellurium (Te) has been famous for its high hole-mobility, excellent ambient stability and topological states. Here, we realize the controllable synthesis of horizontal Te nanoribbon arrays (TRAs) with an angular interval of 60°on mica substrates by physical vapor deposition strategy. The growth of Te nanoribbons (TRs) is driven by two factors, where the intrinsic quasi-one-dimensional spiral chain structure promotes the elongation of their length; the epitaxy relationship between [110] direction of Te and [110] direction of mica facilitates the oriented growth and the expansion of their width. The bending of TRs which have not been reported is induced by grain boundary. Field-effect transistors based on TRs demonstrate high mobility and on/off ratio corresponding to 397 cm2 V-1 s-1 and 1.5×105, respectively. These phenomena supply an opportunity to deep insight into the vapor-transport synthesis of low-dimensional Te and explore its underlying application in monolithic integration.
Collapse
Affiliation(s)
- Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Junrong Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Junwei Chu
- Xi'an Institute of Applied Optics, No.9, West Section of Electron Third Road, Shannxi Xi'an 710065, China
| | - Liu Yang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Xinxin Zhao
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei 230031, China
| | - Yan Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Tong Liu
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Yang Lu
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Cheng Chen
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
| | - Xingang Hou
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Long Fang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.,College of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot 010051, China
| | - Yijun Xu
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Junyong Wang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| |
Collapse
|
33
|
Chen J, Zhou Y, Yan J, Liu J, Xu L, Wang J, Wan T, He Y, Zhang W, Chai Y. Room-temperature valley transistors for low-power neuromorphic computing. Nat Commun 2022; 13:7758. [PMID: 36522374 PMCID: PMC9755139 DOI: 10.1038/s41467-022-35396-x] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2022] [Accepted: 11/29/2022] [Indexed: 12/23/2022] Open
Abstract
Valley pseudospin is an electronic degree of freedom that promises highly efficient information processing applications. However, valley-polarized excitons usually have short pico-second lifetimes, which limits the room-temperature applicability of valleytronic devices. Here, we demonstrate room-temperature valley transistors that operate by generating free carrier valley polarization with a long lifetime. This is achieved by electrostatic manipulation of the non-trivial band topology of the Weyl semiconductor tellurium (Te). We observe valley-polarized diffusion lengths of more than 7 μm and fabricate valley transistors with an ON/OFF ratio of 105 at room temperature. Moreover, we demonstrate an ion insertion/extraction device structure that enables 32 non-volatile memory states with high linearity and symmetry in the Te valley transistor. With ultralow power consumption (~fW valley contribution), we enable the inferring process of artificial neural networks, exhibiting potential for applications in low-power neuromorphic computing.
Collapse
Affiliation(s)
- Jiewei Chen
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Yue Zhou
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Jianmin Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Jidong Liu
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, 518060, Shenzhen, China
| | - Lin Xu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China
| | - Jingli Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Tianqing Wan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
| | - Yuhui He
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, 430074, Wuhan, China
| | - Wenjing Zhang
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology, Shenzhen University, 518060, Shenzhen, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China.
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
| |
Collapse
|
34
|
Meng Y, Wang W, Ho JC. One-Dimensional Atomic Chains for Ultimate-Scaled Electronics. ACS NANO 2022; 16:13314-13322. [PMID: 35997488 DOI: 10.1021/acsnano.2c06359] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
The continuous downscaling of semiconducting channels in transistors has driven the development of modern electronics. However, with the component transistors becoming smaller and denser on a single chip, the continued downscaling progress has touched the physical limits. In this Perspective, we suggest that the emerging one-dimensional (1D) material system involving inorganic atomic chains (ACs) that are packed by van der Waals (vdW) interactions may tackle this issue. Stemming from their 1D crystal structures and naturally terminated surfaces, 1D ACs could potentially shrink transistors to atomic-scale diameters. Also, we argue that 1D ACs with few-atom widths allow us to revisit 1D materials and uncover physical properties distinct from conventional materials. These ultrathin 1D AC materials demand substantive attention. They may bring opportunities to develop ultimate-scaled AC-based electronic, optoelectronic, thermoelectric, spintronic, memory devices, etc.
Collapse
Affiliation(s)
| | | | - Johnny C Ho
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 816-8580, Japan
| |
Collapse
|
35
|
Guo Z, Gu H, Fang M, Ye L, Liu S. Giant in-plane optical and electronic anisotropy of tellurene: a quantitative exploration. NANOSCALE 2022; 14:12238-12246. [PMID: 35929846 DOI: 10.1039/d2nr03226k] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Tellurene's giant in-plane optical anisotropy brings richer physics and an extra degree of freedom to regulate its optical properties for designing novel and unique polarization-sensitive devices. Here, we quantitatively evaluate the in-plane optical anisotropy of tellurene and further reveal its physical origins by combining imaging Mueller matrix spectroscopic ellipsometry (MMSE) and first-principles calculations. The anisotropic complex refractive indices and dielectric functions, as well as the derived giant birefringence (|Δn|max = 0.48) and dichroism (Δk > 0.4), are accurately determined by imaging MMSE to quantitatively evaluate the in-plane optical anisotropy of tellurene. With density functional theory (DFT), tellurene's optical anisotropy is connected to its low-symmetry lattice structure with electrical anisotropy (including the anisotropic effective mass, partial charge density, and carrier mobility), leading to anisotropic electric polarization and ultimately optical anisotropy. This work provides a general and quantitative way to explore the optical anisotropy and also helps to comprehend the connection between the lattice structure and the optical anisotropy of tellurene and even other emerging low-symmetry materials, which will further promote their polarization-sensitive optical applications.
Collapse
Affiliation(s)
- Zhengfeng Guo
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
- Innovation Institute, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Honggang Gu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
- Optics Valley Laboratory, Wuhan 430074, China
| | - Mingsheng Fang
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Lei Ye
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China.
- Optics Valley Laboratory, Wuhan 430074, China
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
| |
Collapse
|
36
|
Affiliation(s)
- See-Hun Yang
- IBM Research - Almaden, San Jose, CA, USA.
- Max Planck Institute for Microstructure Physics, Halle, Germany.
| |
Collapse
|