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Xu S, Evans-Lutterodt K, Li S, Williams NL, Hou B, Huang JJ, Boebinger MG, Lee S, Wang M, Singer A, Guo P, Qiu DY, Cha JJ. Lithiation Induced Phases in 1T'-MoTe 2 Nanoflakes. ACS NANO 2024; 18:17349-17358. [PMID: 38889099 DOI: 10.1021/acsnano.4c06330] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Multiple polytypes of MoTe2 with distinct structures and intriguing electronic properties can be accessed by various physical and chemical approaches. Here, we report electrochemical lithium (Li) intercalation into 1T'-MoTe2 nanoflakes, leading to the discovery of two previously unreported lithiated phases. Distinguished by their structural differences from the pristine 1T' phase, these distinct phases were characterized using in situ polarization Raman spectroscopy and in situ single-crystal X-ray diffraction. The lithiated phases exhibit increasing resistivity with decreasing temperature, and their carrier densities are two to 4 orders of magnitude smaller than the metallic 1T' phase, as probed through in situ Hall measurements. The discovery of these gapped phases in initially metallic 1T'-MoTe2 underscores electrochemical intercalation as a potent tool for tuning the phase stability and electron density in two-dimensional (2D) materials.
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Affiliation(s)
- Shiyu Xu
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
| | - Kenneth Evans-Lutterodt
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Shunran Li
- Department of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - Natalie L Williams
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, United States
| | - Bowen Hou
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
| | - Jason J Huang
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Matthew G Boebinger
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, Tennessee 37830 United States
| | - Sihun Lee
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Mengjing Wang
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Andrej Singer
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Peijun Guo
- Department of Chemical and Environmental Engineering, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - Diana Y Qiu
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
| | - Judy J Cha
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
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2
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Yang R, Mei L, Lin Z, Fan Y, Lim J, Guo J, Liu Y, Shin HS, Voiry D, Lu Q, Li J, Zeng Z. Intercalation in 2D materials and in situ studies. Nat Rev Chem 2024; 8:410-432. [PMID: 38755296 DOI: 10.1038/s41570-024-00605-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 04/11/2024] [Indexed: 05/18/2024]
Abstract
Intercalation of atoms, ions and molecules is a powerful tool for altering or tuning the properties - interlayer interactions, in-plane bonding configurations, Fermi-level energies, electronic band structures and spin-orbit coupling - of 2D materials. Intercalation can induce property changes in materials related to photonics, electronics, optoelectronics, thermoelectricity, magnetism, catalysis and energy storage, unlocking or improving the potential of 2D materials in present and future applications. In situ imaging and spectroscopy technologies are used to visualize and trace intercalation processes. These techniques provide the opportunity for deciphering important and often elusive intercalation dynamics, chemomechanics and mechanisms, such as the intercalation pathways, reversibility, uniformity and speed. In this Review, we discuss intercalation in 2D materials, beginning with a brief introduction of the intercalation strategies, then we look into the atomic and intrinsic effects of intercalation, followed by an overview of their in situ studies, and finally provide our outlook.
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Affiliation(s)
- Ruijie Yang
- Department of Materials Science and Engineering and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
- Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, Canada
| | - Liang Mei
- Department of Materials Science and Engineering and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, China
| | - Yingying Fan
- Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, Canada
| | - Jongwoo Lim
- Department of Chemistry, Seoul National University, Seoul, Republic of Korea
| | - Jinghua Guo
- Advanced Light Source, Energy Storage and Distributed Resources Division, and Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Yijin Liu
- Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX, USA
| | - Hyeon Suk Shin
- Center for 2D Quantum Heterostructures, Institute for Basic Science, and Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, Republic of Korea
| | - Damien Voiry
- Institut Européen des Membranes, IEM, UMR, Université Montpellier, ENSCM, CNRS, Montpellier, France
| | - Qingye Lu
- Department of Chemical and Petroleum Engineering, University of Calgary, Calgary, Alberta, Canada.
| | - Ju Li
- Department of Nuclear Science and Engineering and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Zhiyuan Zeng
- Department of Materials Science and Engineering and State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong, P. R. China.
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, China.
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Hou Y, Zhou J, Xue M, Yu M, Han Y, Zhang Z, Lu Y. Strain Engineering of Twisted Bilayer Graphene: The Rise of Strain-Twistronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311185. [PMID: 38616775 DOI: 10.1002/smll.202311185] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2023] [Revised: 03/24/2024] [Indexed: 04/16/2024]
Abstract
The layer-by-layer stacked van der Waals structures (termed vdW hetero/homostructures) offer a new paradigm for materials design-their physical properties can be tuned by the vertical stacking sequence as well as by adding a mechanical twist, stretch, and hydrostatic pressure to the atomic structure. In particular, simple twisting and stacking of two layers of graphene can form a uniform and ordered Moiré superlattice, which can effectively modulate the electrons of graphene layers and lead to the discovery of unconventional superconductivity and strong correlations. However, the twist angle of twisted bilayer graphene (tBLG) is almost unchangeable once the interlayer stacking is determined, while applying mechanical elastic strain provides an alternative way to deeply regulate the electronic structure by controlling the lattice spacing and symmetry. In this review, diverse experimental advances are introduced in straining tBLG by in-plane and out-of-plane modes, followed by the characterizations and calculations toward quantitatively tuning the strain-engineered electronic structures. It is further discussed that the structural relaxation in strained Moiré superlattice and its influence on electronic structures. Finally, the conclusion entails prospects for opportunities of strained twisted 2D materials, discussions on existing challenges, and an outlook on the intriguing emerging field, namely "strain-twistronics".
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Affiliation(s)
- Yuan Hou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Minmin Xue
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Maolin Yu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Ying Han
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Yang Lu
- Department of Mechanical Engineering, The University of Hong Kong, Pokfulam, Hong Kong, Hong Kong SAR, 999077, China
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4
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Younis MW, Akhter T, Yousaf M, Ali M, Naeem H. Controlled dynamic variation of interfacial electronic and optical properties of lithium intercalated ZrO 2/MoS 2 vdW heterostructure. J Mol Graph Model 2024; 127:108694. [PMID: 38103400 DOI: 10.1016/j.jmgm.2023.108694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2023] [Revised: 11/23/2023] [Accepted: 12/07/2023] [Indexed: 12/19/2023]
Abstract
Efficient strategies for modifying the characteristics of van der Waals (vdW) layered materials in a precise and reversible mode remain challenging. Our suggested method for customization entails the implementation of layer-sliding and intercalation. In this work, a norm-conserving approach within the context of density functional theory has been used to examine the electronic and optical properties of two-dimensional (2D) van der Waals heterostructure (vdWHS), which is modeled by using 2D zirconium dioxide (1T-ZrO2) and molybdenum disulfide (1T-MoS2) monolayers of similar phase. Both contributing monolayers have similar lattice structures, with a minimum lattice mismatch of 0.83 %, and have corrugation on both sides that can successfully retain foreign species at the vdW-gap. In the next step, interfacial engineering through Li-intercalation and layer-sliding was employed to modify physical properties of the vdWHS. It is the worth mentioning that a narrow bandgap of 0.102 eV (0.22 eV) has been observed in the unintercalated ZrO2/MoS2 vdWHS when employing PW-LDA (hybrid-functional). Li-intercalation and sliding process significantly influenced the electronic properties of the studied vdWHS. Furthermore, un-slided and fully-slided Li-intercalated vdWHS exhibit an increase in the vdW-gap by 3.78 % and 27.14 %, respectively, as compared to unintercalated vdWHS. To further understand the electrical behaviour at the interface of contributing monolayers, a comparative study has also been made for the variation in the planar average charge density difference, charge transfer, and interface dipole moment for unintercalated and intercalated vdWHS. In the unintercalated vdWHS, the calculated values of ΔQ and μ(z) provide evidence of significant charge transfer from 1T-ZrO2 to 1T-MoS2 before sliding, whereas in the fully-slided vdWHS, there is 80.11 % more charge transfer from 1T-MoS2 to 1T-ZrO2. Li-intercalation increases the magnitude of ΔQ (by 90.27 %) near 1T-MoS2, indicating a sufficient quantity of charge transfer from the 1T-MoS2 monolayer. The results of the anisotropic analysis show that the calculated in-plane and out-of-plane components of the real and imaginary parts of the dielectric function differ significantly. The optical absorption and energy losses of Li-intercalated vdWHS experience a substantial decrease of about 90 % and 50 %, respectively, as compared to unintercalated vdWHS. Our employed method promotes the notion that interfacial engineering through simultaneous layer-sliding and intercalation approach can be used to regulate and modify the physical properties of 2D insulator/metal based vdWHS.
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Affiliation(s)
- M W Younis
- Department of Chemistry, University of Management and Technology, C-II, Johar Town, Lahore, 54770, Pakistan
| | - Toheed Akhter
- Department of Chemistry, University of Management and Technology, C-II, Johar Town, Lahore, 54770, Pakistan
| | - Masood Yousaf
- Department of Physics, University of Education, Lahore, Pakistan.
| | - Mubashar Ali
- Department of Physics, University of Education, Lahore, Pakistan
| | - Hamza Naeem
- Department of Physics, University of Education, Lahore, Pakistan
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Price CJ, Baker EAD, Hepplestone SP. Properties of Layered TMDC Superlattices for Electrodes in Li-Ion and Mg-Ion Batteries. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:1867-1876. [PMID: 38352854 PMCID: PMC10860140 DOI: 10.1021/acs.jpcc.3c05155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 01/04/2024] [Accepted: 01/05/2024] [Indexed: 02/16/2024]
Abstract
In this work, we present a first-principles investigation of the properties of superlattices made from transition metal dichalcogenides for use as electrodes in lithium-ion and magnesium-ion batteries. From a study of 50 pairings, we show that, in general, the volumetric expansion, intercalation voltages, and thermodynamic stability of vdW superlattice structures can be well approximated with the average value of the equivalent property for the component layers. We also found that the band gap can be reduced, improving the conductivity. Thus, we conclude that superlattice construction can be used to improve material properties through the tuning of intercalation voltages toward specific values and by increasing the stability of conversion-susceptible materials. For example, we demonstrate how pairing SnS2 with systems such as MoS2 can change it from a conversion to an intercalation material, thus opening it up for use in intercalation electrodes.
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Affiliation(s)
- Conor Jason Price
- Department of Physics, University
of Exeter, Stocker Road, Exeter EX4
4QL, U.K.
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6
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Baker EAD, Price CJ, Hepplestone SP. Computational Study of the Enhancement of Graphene Electrodes for Use in Li-Ion Batteries via Forming Superlattices with Transition Metal Dichalcogenides. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2024; 128:723-731. [PMID: 38264433 PMCID: PMC10801692 DOI: 10.1021/acs.jpcc.3c06300] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Revised: 12/18/2023] [Accepted: 12/19/2023] [Indexed: 01/25/2024]
Abstract
In our study, we examined nine transition metal dichalcogenide (TMDC)-graphene superlattices as potential Li-ion intercalation electrodes. We determined their voltages, with ScS2-graphene in T- and R-phases showing the highest at around 3 V, while the others ranged from 0 to 1.5 V. Most superlattices exhibited minimal volumetric expansion (5 to 10%), similar to NMC (8%), except for SnS2-T and NiS2-T, which expanded up to nearly 20%. We evaluated their capacities using a stability metric, EIS, and found that ScS2-T, ScS2-R, and TiS2-T could be intercalated up to two Li ions per MX2 unit without decomposing to Li2S, yielding capacities of 306.77 mA h/g for both ScS2 phases and 310.84 mA h/g for TiS2-T, roughly equivalent to LiC2. MoS2-T could accept Li up to a limit of a = 15/16 in LiaMoS2Cb, corresponding to a capacity of 121.29 mA h/g (equivalent to LiC4). Examining the influence of graphene layers on MoS2-T, we observed a voltage decrease and an initial EIS decrease before effectively flat lining, which is due to charge donation to the middle graphene layer, reducing the electron concentration near the TMDC layer. As graphene layers increased, overall volume expansion decreased with Li intercalation, which is attributed to the in-plane expansion changing. Our results underscore the potential of TMDC-graphene superlattices as Li-ion intercalation electrodes, offering low volumetric expansions, high capacities, and a wide voltage range. These superlattices all show an increase in the capacity of the graphene.
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7
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Fang S, Zahl P, Wang X, Liu P, Stacchiola D, Hu YH. Direct Observation of Twin van der Waals Molecular Chains. J Phys Chem Lett 2023; 14:10710-10716. [PMID: 37988703 DOI: 10.1021/acs.jpclett.3c02914] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2023]
Abstract
The van der Waals (vdW) assemblies are the most common structures of materials. However, direct mapping of intermolecular electron clouds of a vdW assembly has never been obtained, even though the intramolecular electron clouds were visualized by atomic-resolution techniques. In this report, we unprecedentedly mapped the intermolecular electron cloud of the assemblies of ethanol molecules via ethyl groups with high-resolution atomic force microscopy and scanning tunneling microscopy at 5 K, leading to the first visualization of vdW molecular chains, in which ethanol molecules assemble into twin vdW molecular chains in a reverse parallel configuration on the Ag(111) plane. Furthermore, spontaneous order-disorder transitions in the chain were dynamically observed, suggesting its unusual properties different from those of 2D vdW materials. These findings provide an "eye" to see the atomic world of vdW materials.
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Affiliation(s)
- Siyuan Fang
- Department of Materials Science and Engineering, Michigan Technological University, Houghton, Michigan 49931, United States
| | - Percy Zahl
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Xuelong Wang
- Chemistry Division, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Ping Liu
- Chemistry Division, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Dario Stacchiola
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Yun Hang Hu
- Department of Materials Science and Engineering, Michigan Technological University, Houghton, Michigan 49931, United States
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8
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Nessralla J, Larson DT, Taniguchi T, Watanabe K, Kaxiras E, Bediako DK. Modulating the Electrochemical Intercalation of Graphene Interfaces with α-RuCl 3 as a Solid-State Electron Acceptor. NANO LETTERS 2023; 23:10334-10341. [PMID: 37955966 DOI: 10.1021/acs.nanolett.3c02877] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/14/2023]
Abstract
Intercalation reactions modify the charge density in van der Waals (vdW) materials through coupled electronic-ionic charge accumulation and are susceptible to modulation by interlayer hybridization in vdW heterostructures. Here, we demonstrate that charge transfer between graphene and α-RuCl3, which hole-dopes the graphene, greatly favors the intercalation of lithium ions into graphene-based vdW heterostructures. We systematically tune this effect on Li+ ion intercalation, modulating the intercalation potential, by using varying thicknesses of hexagonal boron nitride (hBN) as spacer layers between graphene and α-RuCl3. Confocal Raman spectroscopy and electronic transport measurements are used to monitor electrochemical intercalation, and density functional theory computations help quantify charge transfer to both α-RuCl3 and graphene upon Li intercalation. This work demonstrates a versatile approach for systematically modulating the electrochemical intercalation behavior of two-dimensional layers akin to electron donating/withdrawing substituent effects used to tune molecular redox potentials.
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Affiliation(s)
- Jonathon Nessralla
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Daniel T Larson
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Takashi Taniguchi
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Efthimios Kaxiras
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - D Kwabena Bediako
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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Jiao C, Pei S, Wu S, Wang Z, Xia J. Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 86:114503. [PMID: 37774692 DOI: 10.1088/1361-6633/acfe89] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Accepted: 09/29/2023] [Indexed: 10/01/2023]
Abstract
Two-dimensional (2D) layered materials can stack into new material systems, with van der Waals (vdW) interaction between the adjacent constituent layers. This stacking process of 2D atomic layers creates a new degree of freedom-interlayer interface between two adjacent layers-that can be independently studied and tuned from the intralayer degree of freedom. In such heterostructures (HSs), the physical properties are largely determined by the vdW interaction between the individual layers,i.e.interlayer coupling, which can be effectively tuned by a number of means. In this review, we summarize and discuss a number of such approaches, including stacking order, electric field, intercalation, and pressure, with both their experimental demonstrations and theoretical predictions. A comprehensive overview of the modulation on structural, optical, electrical, and magnetic properties by these four approaches are also presented. We conclude this review by discussing several prospective research directions in 2D HSs field, including fundamental physics study, property tuning techniques, and future applications.
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Affiliation(s)
- Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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10
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Zhang K, Yang R, Sun Z, Chen X, Huang S, Wang N. Layer-dependent excellent thermoelectric materials: from monolayer to trilayer tellurium based on DFT calculation. Front Chem 2023; 11:1295589. [PMID: 37901161 PMCID: PMC10602905 DOI: 10.3389/fchem.2023.1295589] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2023] [Accepted: 09/27/2023] [Indexed: 10/31/2023] Open
Abstract
Monoelemental two-dimensional (2D) materials, which are superior to binary and ternary 2D materials, currently attract remarkable interest due to their fascinating properties. Though the thermal and thermoelectric (TE) transport properties of tellurium have been studied in recent years, there is little research about the thermal and TE properties of multilayer tellurium with interlayer interaction force. Herein, the layer modulation of the phonon transport and TE performance of monolayer, bilayer, and trilayer tellurium is investigated by first-principles calcuations. First, it was found that thermal conductivity as a function of layer numbers possesses a robust, unusually non-monotonic behavior. Moreover, the anisotropy of the thermal transport properties of tellurium is weakened with the increase in the number of layers. By phonon-level systematic analysis, we found that the variation of phonon transport under the layer of increment was determined by increasing the phonon velocity in specific phonon modes. Then, the TE transport properties showed that the maximum figure of merit (ZT) reaches 6.3 (p-type) along the armchair direction at 700 K for the monolayer and 6.6 (p-type) along the zigzag direction at 700 K for the bilayer, suggesting that the TE properties of the monolayer are highly anisotropic. This study reveals that monolayer and bilayer tellurium have tremendous opportunities as candidates in TE applications. Moreover, further increasing the layer number to 3 hinders the improvement of TE performance for 2D tellurium.
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Affiliation(s)
- Kexin Zhang
- Air Traffic Control and Navigation College, Air Force Engineering University, Xi’an, China
| | - Rennong Yang
- Air Traffic Control and Navigation College, Air Force Engineering University, Xi’an, China
| | - Zhehao Sun
- Research School of Chemistry, Australian National University, Canberra, ACT, Australia
| | - Xihao Chen
- School of Materials Science and Engineering, Chongqing University of Arts and Sciences, Chongqing, China
| | - Sizhao Huang
- School of Science, Harbin University of Science and Technology, Harbin, China
| | - Ning Wang
- Key Laboratory of High-Performance Scientific Computation, School of Science, Xihua University, Chengdu, China
- State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai, China
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11
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Endo Y, Yan X, Li M, Akiyama R, Brandl C, Liu JZ, Hobara R, Hasegawa S, Wan W, Novoselov KS, Tang WX. Dynamic topological domain walls driven by lithium intercalation in graphene. NATURE NANOTECHNOLOGY 2023; 18:1154-1161. [PMID: 37488219 DOI: 10.1038/s41565-023-01463-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/13/2023] [Accepted: 06/20/2023] [Indexed: 07/26/2023]
Abstract
Stacking engineering in van der Waals (vdW) materials is a powerful method to control topological electronic phases for quantum device applications. Atomic intercalation into the vdW material can modulate the stacking structure at the atomic scale without a highly technical protocol. Here we report that lithium intercalation in a topologically structured graphene/buffer system on SiC(0001) drives dynamic topological domain wall (TDW) motions associated with stacking order change by using an in situ aberration-corrected low-energy electron microscope in combination with theoretical modelling. We observe sequential and selective lithium intercalation that starts at topological crossing points (AA stacking) and then selectively extends to AB stacking domains. Lithium intercalation locally changes the domain stacking order to AA and in turn alters the neighbouring TDW stacking orders, and continuous intercalation drives the evolution of the whole topological structure network. Our work reveals moving TDWs protected by the topology of stacking and lays the foundation for controlling the stacking structure via atomic intercalation. These findings open up new avenues to realize intercalation-driven vdW electronic devices.
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Affiliation(s)
- Yukihiro Endo
- Department of Physics, The University of Tokyo, Tokyo, Japan
| | - Xue Yan
- Department of Mechanical Engineering, The University of Melbourne, Parkville, Victoria, Australia
| | - Meng Li
- College of Materials Science and Engineering, Chongqing University, Chongqing, China.
| | - Ryota Akiyama
- Department of Physics, The University of Tokyo, Tokyo, Japan.
| | - Christian Brandl
- Department of Mechanical Engineering, The University of Melbourne, Parkville, Victoria, Australia
| | - Jefferson Zhe Liu
- Department of Mechanical Engineering, The University of Melbourne, Parkville, Victoria, Australia.
| | - Rei Hobara
- Department of Physics, The University of Tokyo, Tokyo, Japan
| | - Shuji Hasegawa
- Department of Physics, The University of Tokyo, Tokyo, Japan
| | - Weishi Wan
- ShanghaiTech University, Shanghai, China
| | - K S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
| | - Wen-Xin Tang
- College of Materials Science and Engineering, Chongqing University, Chongqing, China.
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12
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Pan X, Shi J, Wang P, Wang S, Pan C, Yu W, Cheng B, Liang SJ, Miao F. Parallel perception of visual motion using light-tunable memory matrix. SCIENCE ADVANCES 2023; 9:eadi4083. [PMID: 37774015 PMCID: PMC10541003 DOI: 10.1126/sciadv.adi4083] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2023] [Accepted: 08/29/2023] [Indexed: 10/01/2023]
Abstract
Parallel perception of visual motion is of crucial significance to the development of an intelligent machine vision system. However, implementing in-sensor parallel visual motion perception using conventional complementary metal-oxide semiconductor technology is challenging, because the temporal and spatial information embedded in motion cannot be simultaneously encoded and perceived at the sensory level. Here, we demonstrate the parallel perception of diverse motion modes at the sensor level by exploiting light-tunable memory matrix in a van der Waals (vdW) heterostructure array. The optoelectronic characteristics of gate-tunable photoconductivity and light-tunable memory matrix enable devices in the array to realize simultaneous encoding and processing of incoming spatiotemporal light pattern. Furthermore, we implement a visual motion perceptron with the array capable of deciphering multiple motion parameters in parallel, including direction, velocity, acceleration, and angular velocity. Our work opens up a promising venue for the realization of an intelligent machine vision system based on in-sensor motion perception.
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Affiliation(s)
- Xuan Pan
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jingwen Shi
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Pengfei Wang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Shuang Wang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Chen Pan
- Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Wentao Yu
- Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Bin Cheng
- Institute of Interdisciplinary Physical Sciences, School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shi-Jun Liang
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Feng Miao
- Institute of Brain-Inspired Intelligence, National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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13
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He Q, Sheng B, Zhu K, Zhou Y, Qiao S, Wang Z, Song L. Phase Engineering and Synchrotron-Based Study on Two-Dimensional Energy Nanomaterials. Chem Rev 2023; 123:10750-10807. [PMID: 37581572 DOI: 10.1021/acs.chemrev.3c00389] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/16/2023]
Abstract
In recent years, there has been significant interest in the development of two-dimensional (2D) nanomaterials with unique physicochemical properties for various energy applications. These properties are often derived from the phase structures established through a range of physical and chemical design strategies. A concrete analysis of the phase structures and real reaction mechanisms of 2D energy nanomaterials requires advanced characterization methods that offer valuable information as much as possible. Here, we present a comprehensive review on the phase engineering of typical 2D nanomaterials with the focus of synchrotron radiation characterizations. In particular, the intrinsic defects, atomic doping, intercalation, and heterogeneous interfaces on 2D nanomaterials are introduced, together with their applications in energy-related fields. Among them, synchrotron-based multiple spectroscopic techniques are emphasized to reveal their intrinsic phases and structures. More importantly, various in situ methods are employed to provide deep insights into their structural evolutions under working conditions or reaction processes of 2D energy nanomaterials. Finally, conclusions and research perspectives on the future outlook for the further development of 2D energy nanomaterials and synchrotron radiation light sources and integrated techniques are discussed.
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Affiliation(s)
- Qun He
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Beibei Sheng
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Kefu Zhu
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Yuzhu Zhou
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Sicong Qiao
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Zhouxin Wang
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
| | - Li Song
- National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei, Anhui 230029, China
- Zhejiang Institute of Photonelectronics, Jinhua, Zhejiang 321004, China
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14
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Kong Z, Kaminsky CJ, Groschner CK, Murphy RA, Yu Y, Husremović S, Xie LS, Erodici MP, Kim RS, Yano J, Bediako DK. Near Room-Temperature Intrinsic Exchange Bias in an Fe Intercalated ZrSe 2 Spin Glass. J Am Chem Soc 2023; 145:20041-20052. [PMID: 37646536 PMCID: PMC10510322 DOI: 10.1021/jacs.3c06967] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/01/2023] [Indexed: 09/01/2023]
Abstract
Some magnetic systems display a shift in the center of their magnetic hysteresis loop away from zero field, a phenomenon termed exchange bias. Despite the extensive use of the exchange bias effect, particularly in magnetic multilayers, for the design of spin-based memory/electronics devices, a comprehensive mechanistic understanding of this effect remains a longstanding problem. Recent work has shown that disorder-induced spin frustration might play a key role in exchange bias, suggesting new materials design approaches for spin-based electronic devices that harness this effect. Here, we design a spin glass with strong spin frustration induced by magnetic disorder by exploiting the distinctive structure of Fe intercalated ZrSe2, where Fe(II) centers are shown to occupy both octahedral and tetrahedral interstitial sites and to distribute between ZrSe2 layers without long-range structural order. Notably, we observe behavior consistent with a magnetically frustrated and multidegenerate ground state in these Fe0.17ZrSe2 single crystals, which persists above room temperature. Moreover, this magnetic frustration leads to a robust and tunable exchange bias up to 250 K. These results not only offer important insights into the effects of magnetic disorder and frustration in magnetic materials generally, but also highlight as design strategy the idea that a large exchange bias can arise from an inhomogeneous microscopic environment without discernible long-range magnetic order. In addition, these results show that intercalated TMDs like Fe0.17ZrSe2 hold potential for spintronic technologies that can achieve room temperature applications.
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Affiliation(s)
- Zhizhi Kong
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - Corey J. Kaminsky
- Molecular
Biophysics and Integrated Bioimaging Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Catherine K. Groschner
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - Ryan A. Murphy
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - Yun Yu
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - Samra Husremović
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - Lilia S. Xie
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - Matthew P. Erodici
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - R. Soyoung Kim
- Chemical
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Junko Yano
- Molecular
Biophysics and Integrated Bioimaging Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - D. Kwabena Bediako
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
- Chemical
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
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15
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Calis M, Lloyd D, Boddeti N, Bunch JS. Adhesion of 2D MoS 2 to Graphite and Metal Substrates Measured by a Blister Test. NANO LETTERS 2023; 23:2607-2614. [PMID: 37011413 DOI: 10.1021/acs.nanolett.2c04886] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Using a blister test, we measured the work of separation between MoS2 membranes from metal, semiconductor, and graphite substrates. We found a work of separation ranging from 0.11 ± 0.05 J/m2 for chromium to 0.39 ± 0.1 J/m2 for graphite substrates. In addition, we measured the work of adhesion of MoS2 membranes over these substrates and observed a dramatic difference between the work of separation and adhesion, which we attribute to adhesion hysteresis. Due to the prominent role that adhesive forces play in the fabrication and functionality of devices made from 2D materials, an experimental determination of the work of separation and adhesion as provided here will help guide their development.
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Affiliation(s)
- Metehan Calis
- Boston University, Department of Mechanical Engineering, Boston, Massachusetts 02215, United States
| | - David Lloyd
- Analog Garage, Analog Devices Inc., Boston, Massachusetts 02110, United States
| | - Narasimha Boddeti
- Washington State University, School of Mechanical and Materials Engineering, Pullman, Washington 99163, United States
| | - J Scott Bunch
- Boston University, Department of Mechanical Engineering, Boston, Massachusetts 02215, United States
- Boston University, Division of Materials Science and Engineering, Brookline, Massachusetts 02446, United States
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16
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Awate S, Mostek B, Kumari S, Dong C, Robinson JA, Xu K, Fullerton-Shirey SK. Impact of Large Gate Voltages and Ultrathin Polymer Electrolytes on Carrier Density in Electric-Double-Layer-Gated Two-Dimensional Crystal Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:15785-15796. [PMID: 36926818 PMCID: PMC10064313 DOI: 10.1021/acsami.2c13140] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/22/2022] [Accepted: 02/24/2023] [Indexed: 06/18/2023]
Abstract
Electric-double-layer (EDL) gating can induce large capacitance densities (∼1-10 μF cm-2) in two-dimensional (2D) semiconductors; however, several properties of the electrolyte limit performance. One property is the electrochemical activity which limits the gate voltage (VG) that can be applied and therefore the maximum extent to which carriers can be modulated. A second property is electrolyte thickness, which sets the response speed of the EDL gate and therefore the time scale over which the channel can be doped. Typical thicknesses are on the order of micrometers, but thinner electrolytes (nanometers) are needed for very-large-scale-integration (VLSI) in terms of both physical thickness and the speed that accompanies scaling. In this study, finite element modeling of an EDL-gated field-effect transistor (FET) is used to self-consistently couple ion transport in the electrolyte to carrier transport in the semiconductor, in which density of states, and therefore quantum capacitance, is included. The model reveals that 50 to 65% of the applied potential drops across the semiconductor, leaving 35 to 50% to drop across the two EDLs. Accounting for the potential drop in the channel suggests that higher carrier densities can be achieved at larger applied VG without concern for inducing electrochemical reactions. This insight is tested experimentally via Hall measurements of graphene FETs for which VG is extended from ±3 to ±6 V. Doubling the gate voltage increases the sheet carrier density by an additional 2.3 × 1013 cm-2 for electrons and 1.4 × 1013 cm-2 for holes without inducing electrochemistry. To address the need for thickness scaling, the thickness of the solid polymer electrolyte, poly(ethylene oxide) (PEO):CsClO4, is decreased from 1 μm to 10 nm and used to EDL gate graphene FETs. Sheet carrier density measurements on graphene Hall bars prove that the carrier densities remain constant throughout the measured thickness range (10 nm-1 μm). The results indicate promise for overcoming the physical and electrical limitations to VLSI while taking advantage of the ultrahigh carrier densities induced by EDL gating.
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Affiliation(s)
- Shubham
Sukumar Awate
- Department
of Chemical and Petroleum Engineering, University
of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Brendan Mostek
- Department
of Chemical and Petroleum Engineering, University
of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Shalini Kumari
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2D and Layered Materials and Center for Atomically Thin Multifunctional
Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Chengye Dong
- Two-Dimensional
Crystal Consortium, The Pennsylvania State
University, University
Park, Pennsylvania 16802, United States
| | - Joshua A. Robinson
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center
for 2D and Layered Materials and Center for Atomically Thin Multifunctional
Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Two-Dimensional
Crystal Consortium, The Pennsylvania State
University, University
Park, Pennsylvania 16802, United States
| | - Ke Xu
- Department
of Chemical and Petroleum Engineering, University
of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- School
of Physics and Astronomy, Rochester Institute
of Technology, Rochester, New York 14623, United States
- Microsystems
Engineering, Rochester Institute of Technology, Rochester, New York 14623, United States
- School
of Chemistry and Materials Science, Rochester
Institute of Technology, Rochester, New York 14623, United States
| | - Susan K. Fullerton-Shirey
- Department
of Chemical and Petroleum Engineering, University
of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- Department
of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
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17
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Zhang P, Gao D, Tang X, Yang X, Zheng H, Wang Y, Wang X, Xu J, Wang Z, Liu J, Wang X, Ju J, Tang M, Dong X, Li K, Mao HK. Ordered Van der Waals Hetero-nanoribbon from Pressure-Induced Topochemical Polymerization of Azobenzene. J Am Chem Soc 2023; 145:6845-6852. [PMID: 36926877 DOI: 10.1021/jacs.2c13753] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/18/2023]
Abstract
Pressure-induced topochemical polymerization of molecular crystals with various stackings is a promising way to synthesize materials with different co-existing sub-structures. Here, by compressing the azobenzene crystal containing two kinds of intermolecular stacking, we synthesized an ordered van der Waals carbon nanoribbon (CNR) heterostructure in one step. Azobenzene polymerizes via a [4 + 2] hetero-Diels-Alder (HDA) reaction of phenylazo-phenyl in layer A and a para-polymerization reaction of phenyl in layer B at 18 GPa, as evidenced by in situ Raman and IR spectroscopies, X-ray diffraction, as well as gas chromatography-mass spectrometry and the solid-state nuclear magnetic resonance of the recovered products. The theoretical calculation shows that the obtained CNR heterostructure has a type II (staggered) band gap alignment. Our work highlights a high-pressure strategy to synthesize bulk CNR heterostructures.
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Affiliation(s)
- Peijie Zhang
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, People's Republic of China
| | - Dexiang Gao
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, People's Republic of China
| | - Xingyu Tang
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, People's Republic of China
| | - Xin Yang
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, People's Republic of China
| | - Haiyan Zheng
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, People's Republic of China
| | - Yida Wang
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, People's Republic of China
| | - Xuan Wang
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, People's Republic of China
| | - Jingqin Xu
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, People's Republic of China
| | - Zijia Wang
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, People's Republic of China
| | - Jie Liu
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, People's Republic of China
| | - Xiaoge Wang
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Jing Ju
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Mingxue Tang
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, People's Republic of China
| | - Xiao Dong
- Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071, People's Republic of China
| | - Kuo Li
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, People's Republic of China
| | - Ho-Kwang Mao
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, People's Republic of China
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18
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Chen H, Huang HB, Li HH, Zhao SZ, Wang LD, Zhang J, Zhong SL, Lao CF, Cao LM, He CT. Self-Supporting Co/CeO 2 Heterostructures for Ampere-Level Current Density Alkaline Water Electrolysis. Inorg Chem 2023; 62:3297-3304. [PMID: 36758163 DOI: 10.1021/acs.inorgchem.2c04525] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/11/2023]
Abstract
Remodeling the active surface through fabricating heterostructures can substantially enhance alkaline water electrolysis driven by renewable electrical energy. However, there are still great challenges in the synthesis of highly reactive and robust heterostructures to achieve both ampere-level current density hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). Herein, we report a new Co/CeO2 heterojunction self-supported electrode for sustainable overall water splitting. The self-supporting Co/CeO2 heterostructures required only low overpotentials of 31.9 ± 2.2, 253.3 ± 2.7, and 316.7 ± 3 mV for HER and 214.1 ± 1.4, 362.3 ± 1.9, and 400.3 ± 3.7 mV for OER at 0.01, 0.5, and 1.0 A·cm-2, respectively, being one of the best Co-based bifunctional electrodes. Electrolyzer constructed from this electrode acting as an anode and cathode merely required cell voltages of 1.92 ± 0.02 V at 1.0 A·cm-2 for overall water splitting. Multiple characterization techniques combined with density functional theory calculations disclosed the different active sites on the anode and cathode, and the charge redistributions on the heterointerfaces that can optimize the adsorption of H and oxygen-containing intermediates, respectively. This study presents the tremendous prospective of self-supporting heterostructures for effective and economical overall water splitting.
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Affiliation(s)
- Hao Chen
- Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China
| | - Hui-Bin Huang
- Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China
| | - Hai-Hong Li
- Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China
| | - Shui-Zhong Zhao
- Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China
| | - Li-Dong Wang
- Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China
| | - Jia Zhang
- Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China
| | - Sheng-Liang Zhong
- Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China
| | - Cheng-Feng Lao
- Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China
| | - Li-Ming Cao
- Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China
| | - Chun-Ting He
- Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, College of Chemistry and Chemical Engineering, Jiangxi Normal University, Nanchang 330022, China
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19
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Zhu H, Li J, Chen Q, Tang W, Fan X, Li F, Li L. Highly Tunable Lateral Homojunction Formed in Two-Dimensional Layered CuInP 2S 6 via In-Plane Ionic Migration. ACS NANO 2023; 17:1239-1246. [PMID: 36633906 DOI: 10.1021/acsnano.2c09280] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
As basic building blocks for next-generation information technologies devices, high-quality p-n junctions based on van der Waals (vdW) materials have attracted widespread interest. Compared to traditional two-dimensional (2D) heterojunction diodes, the emerging homojunctions are more attractive owing to their intrinsic advantages, such as continuous band alignments and smaller carrier trapping. Here, utilizing the long-range migration of Cu+ ions under an in-plane electric field, a lateral p-n homojunction was constructed in the 2D layered copper indium thiophosphate (CIPS). The symmetric Au/CIPS/Au devices demonstrate an electric-field-driven resistance switching (RS) accompanied by a rectification behavior without any gate control. Moreover, such rectification behavior can be continuously modulated by poling voltage. We deduce that the reversable rectifying RS behavior is governed by the effective lateral build-in potential and the change of the interfacial barrier during the poling process. Furthermore, the CIPS p-n homojuction is evidenced by the photovoltaic effect, with the spectral response extending up to the visible region due to the better photogenerated carrier separation efficiency. Therefore, this work provides a facile route to fabricate homojunctions through electric-field-driven ionic migration.
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Affiliation(s)
- Huanfeng Zhu
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute Zhejiang University, Jiaxing314000, China
| | - Jialin Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Qiang Chen
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Wei Tang
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Xinyi Fan
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Fan Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
| | - Linjun Li
- State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou310027, China
- Intelligent Optics & Photonics Research Center, Jiaxing Research Institute Zhejiang University, Jiaxing314000, China
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20
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Wu F, Wang Z, He J, Li Z, Meng L, Zhang X. Effect of 3 d Transition Metal Atom Intercalation Concentration on the Electronic and Magnetic Properties of Graphene/MoS 2 Heterostructure: A First-Principles Study. MOLECULES (BASEL, SWITZERLAND) 2023; 28:molecules28020509. [PMID: 36677569 PMCID: PMC9864100 DOI: 10.3390/molecules28020509] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 12/31/2022] [Accepted: 01/01/2023] [Indexed: 01/06/2023]
Abstract
The electronic and magnetic properties of graphene/MoS2 heterostructures intercalated with 3d transition metal (TM) atoms at different concentrations have been systematically investigated by first principles calculations. The results showed that all the studied systems are thermodynamically stable with large binding energies of about 3.72 eV-6.86 eV. Interestingly, all the TM-intercalated graphene/MoS2 heterostructures are ferromagnetic and their total magnetic moments increase with TM concentration. Furthermore, TM concentration-dependent spin polarization is obtained for the graphene layer and MoS2 layer due to the charge transfer between TM atoms and the layers. A significant band gap is opened for graphene in these TM-intercalated graphene/MoS2 heterostructures (around 0.094 eV-0.37 eV). With the TM concentration increasing, the band gap of graphene is reduced due to the enhanced spin polarization of graphene. Our study suggests a research direction for the manipulation of the properties of 2D materials through control of the intercalation concentration of TM atoms.
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Affiliation(s)
- Feng Wu
- Department of Physics, Yancheng Institute of Technology, Yancheng 224051, China
| | - Zijin Wang
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, China
| | - Jiaqi He
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, China
| | - Zhenzhe Li
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, China
| | - Lijuan Meng
- Department of Physics, Yancheng Institute of Technology, Yancheng 224051, China
| | - Xiuyun Zhang
- College of Physics Science and Technology & Microelectronics Industry Research Institute, Yangzhou University, Yangzhou 225002, China
- Correspondence:
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21
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Ji JY, Bao T, Wang H, Xu Y, Zhang D, Xue QK. Homogeneous Lateral Lithium Intercalation into Transition Metal Dichalcogenides via Ion Backgating. NANO LETTERS 2022; 22:7336-7342. [PMID: 36122383 DOI: 10.1021/acs.nanolett.2c01705] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Lithium intercalation has become a versatile tool for realizing emergent quantum phenomena in two-dimensional (2D) materials. However, the insertion of lithium ions may be accompanied by the creation of wrinkles and cracks, which prevents the material from manifesting its intrinsic properties under substantial charge injection. By using the recently developed ion backgating technique, we successfully realize lateral intercalation in 1T-TiSe2 and 2H-NbSe2, which shows substantially improved sample homogeneity. The homogeneity at high lithium doping is not only demonstrated via low-temperature transport measurements but also directly visualized by topographical imaging through in situ atomic force microscopy (AFM). The application of lateral intercalation to a broad spectrum of 2D materials can greatly facilitate the search for exotic quantum phenomena.
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Affiliation(s)
- Jia-Yi Ji
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Ting Bao
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Heng Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yong Xu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center for Quantum Matter, Beijing 100084, China
| | - Ding Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center for Quantum Matter, Beijing 100084, China
| | - Qi-Kun Xue
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Collaborative Innovation Center for Quantum Matter, Beijing 100084, China
- Southern University of Science and Technology, Shenzhen 518055, China
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22
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Li H, Xiong X, Hui F, Yang D, Jiang J, Feng W, Han J, Duan J, Wang Z, Sun L. Constructing van der Waals heterostructures by dry-transfer assembly for novel optoelectronic device. NANOTECHNOLOGY 2022; 33:465601. [PMID: 35313295 DOI: 10.1088/1361-6528/ac5f96] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2021] [Accepted: 03/21/2022] [Indexed: 06/14/2023]
Abstract
Since the first successful exfoliation of graphene, the superior physical and chemical properties of two-dimensional (2D) materials, such as atomic thickness, strong in-plane bonding energy and weak inter-layer van der Waals (vdW) force have attracted wide attention. Meanwhile, there is a surge of interest in novel physics which is absent in bulk materials. Thus, vertical stacking of 2D materials could be critical to discover such physics and develop novel optoelectronic applications. Although vdW heterostructures have been grown by chemical vapor deposition, the available choices of materials for stacking is limited and the device yield is yet to be improved. Another approach to build vdW heterostructure relies on wet/dry transfer techniques like stacking Lego bricks. Although previous reviews have surveyed various wet transfer techniques, novel dry transfer techniques have been recently been demonstrated, featuring clean and sharp interfaces, which also gets rid of contamination, wrinkles, bubbles formed during wet transfer. This review summarizes the optimized dry transfer methods, which paves the way towards high-quality 2D material heterostructures with optimized interfaces. Such transfer techniques also lead to new physical phenomena while enable novel optoelectronic applications on artificial vdW heterostructures, which are discussed in the last part of this review.
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Affiliation(s)
- Huihan Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Xiaolu Xiong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Fei Hui
- School of Materials Science and Engineering, The Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, People's Republic of China
| | - Dongliang Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Jinbao Jiang
- School of Microelectronic Science and Technology, Sun Yat-Sen University, Zhuhai, 519082, People's Republic of China
| | - Wanxiang Feng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Junxi Duan
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, People's Republic of China
| | - Linfeng Sun
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
- Beijing Key Lab of Nanophotonics & Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
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23
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Hollow nanospheres constructed by ultrafine few-layered MoS 2 partially with amorphous fragments homogeneously incorporated in N-doped amorphous carbon for enhanced lithium storage performance. J Colloid Interface Sci 2022; 627:804-814. [PMID: 35901560 DOI: 10.1016/j.jcis.2022.07.066] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/30/2022] [Revised: 07/04/2022] [Accepted: 07/11/2022] [Indexed: 11/24/2022]
Abstract
The rational design of ultrathin and few-layered structures for three-dimensional MoS2 nanospheres is crucial for achieving attractive lithium-ion batteries (LIBs). Herein, hollow nanospheres constructed by ultrafine and few-layered MoS2 homogeneously incorporated in N-doped amorphous carbon (HUF-MoS2/NC) have been successfully synthesized as high-performance anode for LIBs. Using Mo-glycerol spheres as templates and dopamine hydrochloride as coordination ligands, hollow Mo-glycerol-polydopamine precursors are formed with Mo-containing groups which are surrounded by organic carbon species. Consequently, the MoS2 is confined to the nanoscale and grows partially amorphous fragments while being uniformly embedded in NC. This unique architecture can not only hinder the substantial restacking between MoS2 interlayers, offering more active sites, but also vastly enhance the electrical conductivity and relieve the mechanical stress ascribed to volume changes. As a result, the HUF-MoS2/NC composite anode exhibits excellent cyclic stability (980mAhg-1 after 300 cycles at 0.2Ag-1) and superior rate performance (498mAhg-1 at 5.0Ag-1) for LIBs.
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24
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Chahal S, Bandyopadhyay A, Dash SP, Kumar P. Microwave Synthesized 2D Gold and Its 2D-2D Hybrids. J Phys Chem Lett 2022; 13:6487-6495. [PMID: 35819242 DOI: 10.1021/acs.jpclett.2c01540] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Xenes, i.e., monoelemental two-dimensional atomic sheets, are promising for sensitive and ultrafast sensor applications owing to exceptional carrier mobility; however, most of them oxidize below 500 °C and therefore cannot be employed for high-temperature applications. 2D gold, an oxidation-resistant plasmonic Xene, is extremely promising. 2D gold was experimentally realized by both atomic layer deposition and chemical synthesis using sodium citrate. However, it is imperative to develop a new facile single-step method to synthesize 2D gold. Here, liquid-phase synthesis of 2D gold is demonstrated by microwave exposure to auric chloride dispersed in dimethylformamide. Microscopies (AFM and high-resolution TEM), spectroscopies (Raman, UV-vis, and X-ray photoelectron), and X-ray diffraction establish the formation of a hexagonal crystallographic phase for 2D gold. 2D-2D hybrids of 2D gold have also been synthesized and investigated for electronic/optoelectronic behaviors and SERS-based molecular sensing. DFT band structure calculation for 2D gold and its hybrids corroborates the experimental findings.
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Affiliation(s)
- Sumit Chahal
- Department of Physics, Indian Institute of Technology Patna, Bihta Campus, Patna-801106, India
| | - Arkamita Bandyopadhyay
- The Bremen Center for Computational Materials Science (BCCMS), Universität Bremen, Am Fallturm 1, TAB Building, 28359 Bremen, Germany
| | - Saroj P Dash
- Department of Microtechnology and Nanoscience, Quantum Device Physics Laboratory, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Prashant Kumar
- Department of Physics, Indian Institute of Technology Patna, Bihta Campus, Patna-801106, India
- Global Innovative Center for Advanced Nanomaterials, University of Newcastle, Callaghan, New South Wales 2308, Australia
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25
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Wang M, Kumar A, Dong H, Woods JM, Pondick JV, Xu S, Hynek DJ, Guo P, Qiu DY, Cha JJ. A Gapped Phase in Semimetallic T d -WTe 2 Induced by Lithium Intercalation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200861. [PMID: 35488783 DOI: 10.1002/adma.202200861] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2022] [Revised: 04/20/2022] [Indexed: 06/14/2023]
Abstract
The Weyl semimetal WTe2 has shown several correlated electronic behaviors, such as the quantum spin Hall effect, superconductivity, ferroelectricity, and a possible exciton insulator state, all of which can be tuned by various physical and chemical approaches. Here, a new electronic phase in WTe2 induced by lithium intercalation is discovered. The new phase exhibits an increasing resistivity with decreasing temperature and its carrier density is almost two orders of magnitude lower than the carrier density of the semimetallic Td phase, probed by in situ Hall measurements as a function of lithium intercalation. The theoretical calculations predict the new lithiated phase to be a potential charge density wave (CDW) phase with a bandgap of ≈0.14 eV, in good agreement with the in situ transport data. The new phase is structurally distinct from the initial Td phase, characterized by polarization-angle-dependent Raman spectroscopy, and large lattice distortions close to 6% are predicted in the new phase. This finding of a new gapped phase in a 2D semimetal demonstrates electrochemical intercalation as a powerful tuning knob for modulating electron density and phase stability in 2D materials.
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Affiliation(s)
- Mengjing Wang
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT, 06511, USA
- Energy Sciences Institute, Yale West Campus, West Haven, CT, 06516, USA
| | - Aakash Kumar
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT, 06511, USA
- Energy Sciences Institute, Yale West Campus, West Haven, CT, 06516, USA
| | - Hao Dong
- Energy Sciences Institute, Yale West Campus, West Haven, CT, 06516, USA
- Department of Chemical and Environmental Engineering, Yale University, New Haven, CT, 06511, USA
| | - John M Woods
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT, 06511, USA
- Energy Sciences Institute, Yale West Campus, West Haven, CT, 06516, USA
| | - Joshua V Pondick
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT, 06511, USA
- Energy Sciences Institute, Yale West Campus, West Haven, CT, 06516, USA
| | - Shiyu Xu
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT, 06511, USA
- Energy Sciences Institute, Yale West Campus, West Haven, CT, 06516, USA
| | - David J Hynek
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT, 06511, USA
- Energy Sciences Institute, Yale West Campus, West Haven, CT, 06516, USA
| | - Peijun Guo
- Energy Sciences Institute, Yale West Campus, West Haven, CT, 06516, USA
- Department of Chemical and Environmental Engineering, Yale University, New Haven, CT, 06511, USA
| | - Diana Y Qiu
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT, 06511, USA
- Energy Sciences Institute, Yale West Campus, West Haven, CT, 06516, USA
| | - Judy J Cha
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT, 06511, USA
- Energy Sciences Institute, Yale West Campus, West Haven, CT, 06516, USA
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26
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Shang J, Shen S, Wang L, Ma Y, Liao T, Gu Y, Kou L. Stacking-Dependent Interlayer Ferroelectric Coupling and Moiré Domains in a Twisted AgBiP 2Se 6 Bilayer. J Phys Chem Lett 2022; 13:2027-2032. [PMID: 35195428 DOI: 10.1021/acs.jpclett.2c00177] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Rotation/twisting of bilayers could induce unprecedented new physics due to stacking-dependent electronic properties and interlayer coupling, such as the superconductivity in twisted bilayer graphene, which can find applications in electronics. However, deep understanding at the atomic/electronic levels is limited by the capability of accurate theoretical simulations. Here, from first-principles simulations, we found that the AgBiP2Se6 bilayer has stacking-dependent ferroelectric ground states due to interlayer polarization coupling. Interlayer ferroelectric coupling is preferred in an AA-stacked AgBiP2Se6 bilayer, but antiferroelectric coupling is preferred in AB- or AC-stacked configurations. The ferroelectric Moiré patterns are thus observed in a twisted AgBiP2Se6 bilayer with ferroelectric (antiferroelectric) interlayer couplings in the AA (AB/AC)-stacked areas. Our work for the first time unveils the effects of twisting/rotation on interlayer polarization coupling and provides a real example of ferroelectric Moiré patterns.
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Affiliation(s)
- Jing Shang
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Shiying Shen
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan 250100, China
| | - Lan Wang
- School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Yandong Ma
- School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, Jinan 250100, China
| | - Ting Liao
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Yuantong Gu
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4000, Australia
| | - Liangzhi Kou
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, Queensland 4000, Australia
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27
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Yoon H, Rezaee M, Lee YA, Yim K, Tamarany R, Lee CW, McGraw VS, Taniguchi T, Watanabe K, Kim P, Yoo CY, Bediako DK. Chloroaluminate Anion Intercalation in Graphene and Graphite: From Two-Dimensional Devices to Aluminum-Ion Batteries. NANO LETTERS 2022; 22:1726-1733. [PMID: 35133170 DOI: 10.1021/acs.nanolett.1c04832] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A rechargeable aluminum-ion battery based on chloroaluminate electrolytes has received intense attention due to the high abundance and chemical stability of aluminum. However, the fundamental intercalation processes and dynamics in these battery systems remain unresolved. Here, the energetics and dynamics of chloroaluminate ion intercalation in atomically thin single crystal graphite are investigated by fabricating mesoscopic devices for charge transport and operando optical microscopy. These mesoscopic measurements are compared to the high-performance rechargeable Al-based battery consisting of a few-layer graphene-multiwall carbon nanotube composite cathode. These composites exhibit a 60% capacity enhancement over pyrolytic graphite, while an ∼3-fold improvement in overall ion diffusivity is also obtained exhibiting ∼1% of those in atomically thin single crystals. Our results thus establish the distinction between intrinsic and ensemble electrochemical behavior in Al-based batteries and show that engineering ion transport in these devices can yet lead to vast improvements in battery performance.
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Affiliation(s)
- Hana Yoon
- Energy Storage Laboratory, Korea Institute of Energy Research (KIER), Daejeon 34129, Republic of Korea
| | - Mehdi Rezaee
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Yeong A Lee
- Energy Storage Laboratory, Korea Institute of Energy Research (KIER), Daejeon 34129, Republic of Korea
- Department of Advanced Energy Materials, Graduate School of Energy Science and Technology (GEST), Chungnam National University, Daejeon 34134, Republic of Korea
| | - Kanghoon Yim
- Computational Science and Engineering Laboratory, Korea Institute of Energy Research (KIER), Daejeon 34129, Republic of Korea
| | - Rizcky Tamarany
- Computational Science and Engineering Laboratory, Korea Institute of Energy Research (KIER), Daejeon 34129, Republic of Korea
| | - Chan-Woo Lee
- Computational Science and Engineering Laboratory, Korea Institute of Energy Research (KIER), Daejeon 34129, Republic of Korea
| | - Valerie S McGraw
- Department of Chemistry, University of California, Berkeley, California 94720, United States
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Philip Kim
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Chung-Yul Yoo
- Department of Chemistry, Mokpo National University, Muan-gun, Jeollanam-do 58554, Republic of Korea
| | - D Kwabena Bediako
- Department of Chemistry, University of California, Berkeley, California 94720, United States
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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28
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Guo J, Xiang R, Cheng T, Maruyama S, Li Y. One-Dimensional van der Waals Heterostructures: A Perspective. ACS NANOSCIENCE AU 2022; 2:3-11. [PMID: 37101518 PMCID: PMC10114641 DOI: 10.1021/acsnanoscienceau.1c00023] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 04/28/2023]
Abstract
As a new frontier in low-dimensional material research, van der Waals (vdW) heterostructures, represented by 2D heterostructures, have attracted tremendous attention due to their unique properties and potential applications. The emerging 1D heterostructures open new possibilities for the field with expectant unconventional properties and yet more challenging preparation pathways. This Perspective aims to give an overall understanding of the state-of-the-art growth strategies and fantastic properties of the 1D heterostructures and provide an outlook for further development based on the controlled preparation, which will bring up a variety of applications in high-performance electronic, optoelectronic, magnetic, and energy storage devices. A quick rise of the fundamentals and application study of 1D heterostructures is anticipated.
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Affiliation(s)
- Jia Guo
- Beijing
National Laboratory for Molecular Sciences, Key Laboratory for the
Physics and Chemistry of Nanodevices, State Key Laboratory of Rare
Earth Materials Chemistry and Applications, College of Chemistry and
Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Rong Xiang
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
| | - Ting Cheng
- Beijing
National Laboratory for Molecular Sciences, Key Laboratory for the
Physics and Chemistry of Nanodevices, State Key Laboratory of Rare
Earth Materials Chemistry and Applications, College of Chemistry and
Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Shigeo Maruyama
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
| | - Yan Li
- Beijing
National Laboratory for Molecular Sciences, Key Laboratory for the
Physics and Chemistry of Nanodevices, State Key Laboratory of Rare
Earth Materials Chemistry and Applications, College of Chemistry and
Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Peking
University Shenzhen Institute, Shenzhen 518057, China
- PKU-HKUST
ShenZhen-HongKong Institution, Shenzhen 518057, China
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29
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Chen X, Fan K, Liu Y, Li Y, Liu X, Feng W, Wang X. Recent Advances in Fluorinated Graphene from Synthesis to Applications: Critical Review on Functional Chemistry and Structure Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2101665. [PMID: 34658081 DOI: 10.1002/adma.202101665] [Citation(s) in RCA: 43] [Impact Index Per Article: 21.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/01/2021] [Revised: 05/27/2021] [Indexed: 05/11/2023]
Abstract
Fluorinated graphene (FG), as an emerging member of the graphene derivatives family, has attracted wide attention on account of its excellent performances and underlying applications. The introduction of a fluorine atom, with the strongest electronegativity (3.98), greatly changes the electron distribution of graphene, resulting in a series of unique variations in optical, electronic, magnetic, interfacial properties and so on. Herein, recent advances in the study of FG from synthesis to applications are introduced, and the relationship between its structure and properties is summarized in detail. Especially, the functional chemistry of FG has been thoroughly analyzed in recent years, which has opened a universal route for the functionalization and even multifunctionalization of FG toward various graphene derivatives, which further broadens its applications. Moreover, from a particular angle, the structure engineering of FG such as the distribution pattern of fluorine atoms and the regulation of interlayer structure when advanced nanotechnology gets involved is summarized. Notably, the elaborated structure engineering of FG is the key factor to optimize the corresponding properties for potential applications, and is also an up-to-date research hotspot and future development direction. Finally, perspectives and prospects for the problems and challenges in the study of FG are put forward.
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Affiliation(s)
- Xinyu Chen
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Kun Fan
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Yang Liu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Yu Li
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300354, P. R. China
| | - Xiangyang Liu
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
| | - Wei Feng
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300354, P. R. China
| | - Xu Wang
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Material and Engineering, Sichuan University, Chengdu, 610065, P. R. China
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30
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Bai H, Ai H, Li B, Liu D, Lo KH, Ng KW, Shi X, Kawazoe Y, Pan H. CNSi/MXene/CNSi: Unique Structure with Specific Electronic Properties for Nanodevices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2101482. [PMID: 34151516 DOI: 10.1002/smll.202101482] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/13/2021] [Revised: 05/09/2021] [Indexed: 06/13/2023]
Abstract
2D materials have been interesting for applications into nanodevices due to their intriguing physical properties. In this work, four types of unique structures are designed that are composed of MXenes and C/N-Si layers (CNSi), where MXene is sandwiched by the CNSi layers with different thicknesses, for their practical applications into integrated devices. The systematic calculations on their elastic constants, phonon dispersions, and thermodynamic properties show that these structures are stable, depending on the composition of MXene. It is found: 1) different from MXene or N-functionalized MXene (M2 CN2 ), SiN2 /M2 X/SiN2 possess new electronic properties with free carriers only in the middle, leading to 2D free electron gas; 2) CNSi/MXene/CNSi shows an intrinsic Ohmic semiconductor-metal-semiconductor (S-M-S) contact, which is potential for applications into nanodevices; and 3) O/M2 C/SiN2 and N/M2 C/OSiN are also stable and show different electronic properties, which can be semiconductor or metal as a whole depending on the interface. A method is further proposed to fabricate the 2D structures based on the industrial availability. The findings may provide a novel strategy to design and fabricate the 2D structures for their application into nanodevices and integrated circuits.
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Affiliation(s)
- Haoyun Bai
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, China
| | - Haoqiang Ai
- Department of Electromechanical Engineering, Faculty of Science and Technology, University of Macau, Macao SAR, China
| | - Bowen Li
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, China
| | - Dong Liu
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, China
| | - Kin Ho Lo
- Department of Electromechanical Engineering, Faculty of Science and Technology, University of Macau, Macao SAR, China
| | - Kar Wei Ng
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, China
| | - Xingqiang Shi
- College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Yoshiyuki Kawazoe
- New Industry Creation Hatchery Center, Tohoku University, Sendai, 980-8577, Japan
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu, 603203, India
- School of Physics, Suranaree University of Technology, 111 University Avenue Muang, Nakhon Ratchasima, 30000, Thailand
| | - Hui Pan
- Institute of Applied Physics and Materials Engineering, University of Macau, Macao SAR, China
- Department of Physics and Chemistry, Faculty of Science and Technology, University of Macau, Macao SAR, China
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31
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Coexistence of resistance oscillations and the anomalous metal phase in a lithium intercalated TiSe 2 superconductor. Nat Commun 2021; 12:5342. [PMID: 34504094 PMCID: PMC8429654 DOI: 10.1038/s41467-021-25671-8] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/17/2020] [Accepted: 08/22/2021] [Indexed: 11/24/2022] Open
Abstract
Superconductivity and charge density wave (CDW) appear in the phase diagram of a variety of materials including the high-Tc cuprate family and many transition metal dichalcogenides (TMDs). Their interplay may give rise to exotic quantum phenomena. Here, we show that superconducting arrays can spontaneously form in TiSe2–a TMD with coexisting superconductivity and CDW—after lithium ion intercalation. We induce a superconducting dome in the phase diagram of LixTiSe2 by using the ionic solid-state gating technique. Around optimal doping, we observe magnetoresistance oscillations, indicating the emergence of periodically arranged domains. In the same temperature, magnetic field and carrier density regime where the resistance oscillations occur, we observe signatures for the anomalous metal—a state with a resistance plateau across a wide temperature range below the superconducting transition. Our study not only sheds further insight into the mechanism for the periodic electronic structure, but also reveals the interplay between the anomalous metal and superconducting fluctuations. The interplay between superconductivity and charge density wave (CDW) gives rise to exotic quantum phenomena. Here, the authors observe magnetoresistance oscillations and an anomalous metal state due to the coexistence of superconductivity and CDW in lithium intercalated TiSe2.
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32
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Muscher PK, Rehn DA, Sood A, Lim K, Luo D, Shen X, Zajac M, Lu F, Mehta A, Li Y, Wang X, Reed EJ, Chueh WC, Lindenberg AM. Highly Efficient Uniaxial In-Plane Stretching of a 2D Material via Ion Insertion. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101875. [PMID: 34331368 DOI: 10.1002/adma.202101875] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2021] [Revised: 05/27/2021] [Indexed: 06/13/2023]
Abstract
On-chip dynamic strain engineering requires efficient micro-actuators that can generate large in-plane strains. Inorganic electrochemical actuators are unique in that they are driven by low voltages (≈1 V) and produce considerable strains (≈1%). However, actuation speed and efficiency are limited by mass transport of ions. Minimizing the number of ions required to actuate is thus key to enabling useful "straintronic" devices. Here, it is shown that the electrochemical intercalation of exceptionally few lithium ions into WTe2 causes large anisotropic in-plane strain: 5% in one in-plane direction and 0.1% in the other. This efficient stretching of the 2D WTe2 layers contrasts to intercalation-induced strains in related materials which are predominantly in the out-of-plane direction. The unusual actuation of Lix WTe2 is linked to the formation of a newly discovered crystallographic phase, referred to as Td', with an exotic atomic arrangement. On-chip low-voltage (<0.2 V) control is demonstrated over the transition to the novel phase and its composition. Within the Td'-Li0.5- δ WTe2 phase, a uniaxial in-plane strain of 1.4% is achieved with a change of δ of only 0.075. This makes the in-plane chemical expansion coefficient of Td'-Li0.5-δ WTe2 far greater than of any other single-phase material, enabling fast and efficient planar electrochemical actuation.
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Affiliation(s)
- Philipp K Muscher
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Daniel A Rehn
- Computational Physics Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA
| | - Aditya Sood
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Kipil Lim
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Duan Luo
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Xiaozhe Shen
- SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Marc Zajac
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Feiyu Lu
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - Apurva Mehta
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Yiyang Li
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Xijie Wang
- SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Evan J Reed
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
| | - William C Chueh
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
| | - Aaron M Lindenberg
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA
- Stanford Institute for Materials & Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
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33
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Mao Y, Guo Z, Yuan J, Sun T. 1D/2D van der Waals Heterojunctions Composed of Carbon Nanotubes and a GeSe Monolayer. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1565. [PMID: 34198617 PMCID: PMC8232292 DOI: 10.3390/nano11061565] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/07/2021] [Revised: 06/03/2021] [Accepted: 06/05/2021] [Indexed: 01/22/2023]
Abstract
Based on first-principles calculations, we propose van der Waals (vdW) heterojunctions composed of one-dimensional carbon nanotubes (CNTs) and two-dimensional GeSe. Our calculations show that (n,0)CNT/GeSe (n = 5-11) heterojunctions are stable through weak vdW interactions. Among these heterojunctions, (n,0)CNT/GeSe (n = 5-7) exhibit metallic properties, while (n,0)CNT/GeSe (n = 8-11) have a small bandgap, lower than 0.8 eV. The absorption coefficient of (n,0)CNT/GeSe (n = 8-11) in the ultraviolet and infrared regions is around 105 cm-1. Specifically, we found that (11,0)CNT/GeSe exhibits type-II band alignment and has a high photoelectric conversion efficiency of 17.29%, which suggests prospective applications in photoelectronics.
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Affiliation(s)
- Yuliang Mao
- Hunan Key Laboratory for Micro–Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan 411105, China;
| | - Zheng Guo
- Hunan Key Laboratory for Micro–Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Xiangtan 411105, China;
| | - Jianmei Yuan
- Hunan Key Laboratory for Computation and Simulation in Science and Engineering, School of Mathematics and Computational Science, Xiangtan University, Xiangtan 411105, China;
| | - Tao Sun
- Hunan Key Laboratory for Computation and Simulation in Science and Engineering, School of Mathematics and Computational Science, Xiangtan University, Xiangtan 411105, China;
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Zhou J, Lin Z, Ren H, Duan X, Shakir I, Huang Y, Duan X. Layered Intercalation Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2004557. [PMID: 33984164 DOI: 10.1002/adma.202004557] [Citation(s) in RCA: 54] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2020] [Revised: 12/29/2020] [Indexed: 06/12/2023]
Abstract
2D layered materials typically feature strong in-plane covalent chemical bonding within each atomic layer and weak out-of-plane van der Waals (vdW) interactions between adjacent layers. The non-bonding nature between neighboring layers naturally results in a vdW gap, in which various foreign species may be inserted without breaking the in-plane covalent bonds. By tailoring the composition, size, structure, and electronic properties of the intercalated guest species and the hosting layered materials, an expansive family of layered intercalation materials may be produced with highly variable compositional and structural features as well as widely tunable physical/chemical properties, invoking unprecedented opportunities in fundamental studies of property modulation and potential applications in diverse technologies, including electronics, optics, superconductors, thermoelectrics, catalysis, and energy storage. Here, the principles and protocols for various intercalation methods, including wet chemical intercalation, gas-phase intercalation, electrochemical intercalation, and ion-exchange intercalation, are comprehensively reviewed and how the intercalated species alter the crystal structure and the interlayer coupling of the host 2D layered materials, introducing unusual physical and chemical properties and enabling devices with superior performance or unique functions, is discussed. To conclude, a brief summary on future research opportunities and emerging challenges in the layered intercalation materials is given.
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Affiliation(s)
- Jingyuan Zhou
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Zhaoyang Lin
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Huaying Ren
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Xidong Duan
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Imran Shakir
- Sustainable Energy Technologies Centre, College of Engineering, King Saud University, Riyadh, 11451, Saudi Arabia
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Yu Huang
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, CA, 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA, 90095, USA
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, CA, 90095, USA
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35
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Wang M, Xu S, Cha JJ. Revisiting Intercalation‐Induced Phase Transitions in 2D Group VI Transition Metal Dichalcogenides. ADVANCED ENERGY AND SUSTAINABILITY RESEARCH 2021. [DOI: 10.1002/aesr.202100027] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2023]
Affiliation(s)
- Mengjing Wang
- Department of Mechanical Engineering and Materials Science Yale University 15 Prospect St New Haven CT 06511 USA
| | - Shiyu Xu
- Department of Mechanical Engineering and Materials Science Yale University 15 Prospect St New Haven CT 06511 USA
| | - Judy J. Cha
- Department of Mechanical Engineering and Materials Science Yale University 15 Prospect St New Haven CT 06511 USA
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36
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Xiong F, Yalon E, McClellan CJ, Zhang J, Aslan B, Sood A, Sun J, Andolina CM, Saidi WA, Goodson KE, Heinz TF, Cui Y, Pop E. Tuning electrical and interfacial thermal properties of bilayer MoS 2via electrochemical intercalation. NANOTECHNOLOGY 2021; 32:265202. [PMID: 33601363 DOI: 10.1088/1361-6528/abe78a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/26/2020] [Accepted: 02/18/2021] [Indexed: 06/12/2023]
Abstract
Layered two-dimensional (2D) materials such as MoS2have attracted much attention for nano- and opto-electronics. Recently, intercalation (e.g. of ions, atoms, or molecules) has emerged as an effective technique to modulate material properties of such layered 2D films reversibly. We probe both the electrical and thermal properties of Li-intercalated bilayer MoS2nanosheets by combining electrical measurements and Raman spectroscopy. We demonstrate reversible modulation of carrier density over more than two orders of magnitude (from 0.8 × 1012to 1.5 × 1014cm-2), and we simultaneously obtain the thermal boundary conductance between the bilayer and its supporting SiO2substrate for an intercalated system for the first time. This thermal coupling can be reversibly modulated by nearly a factor of eight, from 14 ± 4.0 MW m-2K-1before intercalation to 1.8 ± 0.9 MW m-2K-1when the MoS2is fully lithiated. These results reveal electrochemical intercalation as a reversible tool to modulate and control both electrical and thermal properties of 2D layers.
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Affiliation(s)
- Feng Xiong
- Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA 15261, United States of America
| | - Eilam Yalon
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States of America
| | - Connor J McClellan
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States of America
| | - Jinsong Zhang
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States of America
| | - Burak Aslan
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States of America
- Department of Applied Physics, Stanford University, Stanford, CA 94305, United States of America
| | - Aditya Sood
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States of America
| | - Jie Sun
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States of America
| | - Christopher M Andolina
- Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261, United States of America
| | - Wissam A Saidi
- Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, PA 15261, United States of America
| | - Kenneth E Goodson
- Department of Mechanical Engineering, Stanford University, Stanford, CA 94305, United States of America
| | - Tony F Heinz
- Department of Applied Physics, Stanford University, Stanford, CA 94305, United States of America
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, United States of America
| | - Yi Cui
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States of America
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, United States of America
| | - Eric Pop
- Department of Electrical Engineering, Stanford University, Stanford, CA 94305, United States of America
- Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, United States of America
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37
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Wang F, Pei K, Li Y, Li H, Zhai T. 2D Homojunctions for Electronics and Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005303. [PMID: 33644885 DOI: 10.1002/adma.202005303] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2020] [Revised: 09/19/2020] [Indexed: 05/21/2023]
Abstract
In the post-Moore era, 2D materials with rich physical properties have attracted widespread attention from the scientific and industrial communities. Among 2D materials, the 2D homojunctions are of great promise in designing novel electronic and optoelectronic devices due to their unique geometries and properties such as homogeneous components, perfect lattice matching, and efficient charge transfer at the interface. In this article, a pioneering review focusing on the structural design and device application of 2D homojunctions such as p-n homojunctions, heterophase homojunctions, and layer-engineered homojunctions is provided. The preparation strategies to construct 2D homojunctions including vapor-phase deposition, lithium intercalation, laser irradiation, chemical doping, electrostatic doping, and photodoping are summarized in detail. Specifically, a careful review on the applications of the 2D homojunctions in electronics (e.g., field-effect transistors, rectifiers, and inverters) and optoelectronics (e.g., light-emitting diodes, photovoltaics, and photodetectors) is provided. Eventually, the current challenges and future perspectives are commented for promoting the rapid development of 2D homojunctions.
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Affiliation(s)
- Fakun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Ke Pei
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yuan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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38
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Yazdani S, Pondick JV, Kumar A, Yarali M, Woods JM, Hynek DJ, Qiu DY, Cha JJ. Heterointerface Effects on Lithium-Induced Phase Transitions in Intercalated MoS 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:10603-10611. [PMID: 33596044 DOI: 10.1021/acsami.0c21495] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
The intercalation-induced phase transition of MoS2 from the semiconducting 2H to the semimetallic 1T' phase has been studied in detail for nearly a decade; however, the effects of a heterointerface between MoS2 and other two-dimensional (2D) crystals on the phase transition have largely been overlooked. Here, ab initio calculations show that intercalating Li at a MoS2-hexagonal boron nitride (hBN) interface stabilizes the 1T phase over the 2H phase of MoS2 by ∼100 mJ m -2, suggesting that encapsulating MoS2 with hBN may lower the electrochemical energy needed for the intercalation-induced phase transition. However, in situ Raman spectroscopy of hBN-MoS2-hBN heterostructures during the electrochemical intercalation of Li+ shows that the phase transition occurs at the same applied voltage for the heterostructure as for bare MoS2. We hypothesize that the predicted thermodynamic stabilization of the 1T'-MoS2-hBN interface is counteracted by an energy barrier to the phase transition imposed by the steric hindrance of the heterointerface. The phase transition occurs at lower applied voltages upon heating the heterostructure, which supports our hypothesis. Our study highlights that interfacial effects of 2D heterostructures can go beyond modulating electrical properties and can modify electrochemical and phase transition behaviors.
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Affiliation(s)
- Sajad Yazdani
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - Joshua V Pondick
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - Aakash Kumar
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - Milad Yarali
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - John M Woods
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - David J Hynek
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - Diana Y Qiu
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
| | - Judy J Cha
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, Connecticut 06511, United States
- Energy Sciences Institute, Yale West Campus, West Haven, Connecticut 06516, United States
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Cao Q, Grote F, Huβmann M, Eigler S. Emerging field of few-layered intercalated 2D materials. NANOSCALE ADVANCES 2021; 3:963-982. [PMID: 36133283 PMCID: PMC9417328 DOI: 10.1039/d0na00987c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2020] [Accepted: 12/31/2020] [Indexed: 06/13/2023]
Abstract
The chemistry and physics of intercalated layered 2D materials (2DMs) are the focus of this review article. Special attention is given to intercalated bilayer and few-layer systems. Thereby, intercalated few-layers of graphene and transition metal dichalcogenides play the major role; however, also other intercalated 2DMs develop fascinating properties with thinning down. Here, we briefly introduce the historical background of intercalation and explain concepts, which become relevent with intercalating few-layers. Then, we describe various synthetic methods to yield intercalated 2DMs and focus next on current research directions, which are superconductivity, band gap tuning, magnetism, optical properties, energy storage and chemical reactions. We focus on major breakthroughs in all introduced sections and give an outlook to this emerging field of research.
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Affiliation(s)
- Qing Cao
- Institute of Chemistry and Biochemistry, Freie Universität Berlin Takustraβe 3 14195 Berlin Germany
| | - Fabian Grote
- Institute of Chemistry and Biochemistry, Freie Universität Berlin Takustraβe 3 14195 Berlin Germany
| | - Marleen Huβmann
- Institute of Chemistry and Biochemistry, Freie Universität Berlin Takustraβe 3 14195 Berlin Germany
| | - Siegfried Eigler
- Institute of Chemistry and Biochemistry, Freie Universität Berlin Takustraβe 3 14195 Berlin Germany
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Moatasim M, Wang Z, Xie Y, Huang H, Chen N, Wang Y, Zhao H, Zhang H, Yang W. Solving Gravimetric-Volumetric Capacitive Paradox of 2D Materials through Dual-Functional Chemical Bonding-Induced Self-Constructing Graphene-MXene Monoliths. ACS APPLIED MATERIALS & INTERFACES 2021; 13:6339-6348. [PMID: 33502153 DOI: 10.1021/acsami.0c21257] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
High electrical conductivity and all-open microstructure characteristics intrinsically endow both graphene and MXenes with superior electrochemical energy storage capability. However, the above two-dimensional (2D) thicker electrodes (>20 μm) severely dilute their unique rapid electronic-ionic transferring characteristic, posing a paradox of high gravimetric and high volumetric capacitive properties due to massively excessive macropores or an unduly restacked issue. Herein, we elaborately construct novel monolithic NH2-graphene and Ti3C2Tx MXene (NG@MX) composites through dual-functional induced self-assembly with the help of both covalent and hydrogen bonding interactions. Notably, much thicker monolithic NG@MX electrodes (>90 μm) fabricated by a conventional roll-coating method without any further compaction treatment can simultaneously deliver two times gravimetric (gra.) and volumetric (vol.) performance than those of pure graphene (in vol.) or MXene (in gra.) materials. Moreover, monolithic NG@MX-based supercapacitors can remarkably present two times energy density as that of graphene and four times as MXene, respectively. Such greatly enhanced electrochemical properties are closely related to the appropriate equilibrium of the volumetric density and the open structure, which can effectively guarantee the rapid transfer of both electrons and ions in the thick monolithic NG@MX electrodes. Undoubtedly, dual-functional chemical bonding-induced self-constructing NG@MX monoliths efficiently solve the long-existing gra. and vol. capacitive paradox of the thicker 2D materials used in supercapacitors, which will guide the design of high-performance capacitive materials and promote their practical application in electrochemical energy storage.
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Affiliation(s)
- Marwa Moatasim
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P.R. China
| | - Zixing Wang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P.R. China
- College of Materials Science and Engineering, Hunan Province Key Laboratory for Advanced Carbon Materials and Applied Technology, Hunan University, Changsha, 410082, China
| | - Yanting Xie
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P.R. China
| | - Haichao Huang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P.R. China
| | - Ningjun Chen
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P.R. China
| | - Yuchen Wang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P.R. China
| | - Haibo Zhao
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P.R. China
| | - Haitao Zhang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P.R. China
| | - Weiqing Yang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Material Science and Engineering, Southwest Jiaotong University, Chengdu 610031, P.R. China
- State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu 610031, P.R. China
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Li X, Kou Z, Wang J. Manipulating Interfaces of Electrocatalysts Down to Atomic Scales: Fundamentals, Strategies, and Electrocatalytic Applications. SMALL METHODS 2021; 5:e2001010. [PMID: 34927897 DOI: 10.1002/smtd.202001010] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2020] [Revised: 12/03/2020] [Indexed: 05/03/2023]
Abstract
Raising electrocatalysis by rationally devising catalysts plays a core role in almost all renewable energy conversion and storage systems. The principal catalytic properties can be controlled and improved well by manipulation of interfaces, ascribed to the interactions among different components/players at the interfaces. In particular, manipulating interfaces down to atomic scales is becoming increasingly attractive, not only because those atoms at around the interface are the key players during electrocatalysis, but also, understandings on the atomic level electrocatalysis allow one to gain deep insights into the reaction mechanism. With the feature down-sizing to atomic scales, there is a timely need to redefine the interfaces, as some of them have gone beyond the conventionally perceived interfacial concept. In this overview, the key active players participating in the interfacial manipulation of electrocatalysts are examined, from a new angle of "atomic interface," including those individual atoms, defects, and their interactions, together with the essential characterization techniques for them. The specific approaches and pathways to engineer better atomic interfaces are investigated, and thus to enable the unique electrocatalysis for targeted applications. Looking beyond recent progress, the challenges and prospects of the atomic level interfacial engineering are also briefly visited.
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Affiliation(s)
- Xin Li
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - Zongkui Kou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - John Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
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Li Y, Yan H, Xu B, Zhen L, Xu CY. Electrochemical Intercalation in Atomically Thin van der Waals Materials for Structural Phase Transition and Device Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2000581. [PMID: 32725672 DOI: 10.1002/adma.202000581] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2020] [Revised: 04/22/2020] [Indexed: 06/11/2023]
Abstract
In van der Waals (vdWs) materials and heterostructures, the interlayers are bonded by weak vdWs interactions due to the lack of dangling bonds. The vdWs gap at the homo- or heterointerface provides great freedom to enrich the tunability of electronic structures by external intercalation of foreign ions or atoms at the interface, leading to the discovery of new physics and functionalities. Herein, the recent progress on electrochemical intercalation of foreign species into atomically thin vdWs materials for structural phase transition and device applications is reviewed and future opportunities are discussed. First, several kinds of electrochemical intercalation platforms to achieve the intercalation in vdWs materials and heterostructures are introduced. Next, the in situ characterization of electrochemical intercalation dynamics by state-of-the-art techniques is summarized, including optical techniques, scanning probe techniques, and electrical transport. Moreover, particular attention is paid on the experimentally reported phase transition and multifunctional applications of intercalated devices. Finally, future applications and challenges of intercalation in vdWs materials and heterostructures are proposed, including the intrinsic intercalation mechanism of solid ion conductors, exact identification of intercalated foreign species by near-field optical techniques, and the tunability of intercalation kinetics for ultrafast switching.
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Affiliation(s)
- Yang Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, P. R. China
| | - Hang Yan
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, P. R. China
| | - Bo Xu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, P. R. China
| | - Liang Zhen
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, P. R. China
| | - Cheng-Yan Xu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
- MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing, Harbin Institute of Technology, Harbin, 150080, P. R. China
- School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen, 518055, P. R. China
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Song C, Noh G, Kim TS, Kang M, Song H, Ham A, Jo MK, Cho S, Chai HJ, Cho SR, Cho K, Park J, Song S, Song I, Bang S, Kwak JY, Kang K. Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics. ACS NANO 2020; 14:16266-16300. [PMID: 33301290 DOI: 10.1021/acsnano.0c06607] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
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Affiliation(s)
- Chanwoo Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seorin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Kiwon Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Intek Song
- Department of Applied Chemistry, Andong National University, Andong 36728, Korea
| | - Sunghwan Bang
- Materials & Production Engineering Research Institute, LG Electronics, Pyeongtaek-si 17709, Korea
| | - Joon Young Kwak
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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Direct measurements of interfacial adhesion in 2D materials and van der Waals heterostructures in ambient air. Nat Commun 2020; 11:5607. [PMID: 33154376 PMCID: PMC7645779 DOI: 10.1038/s41467-020-19411-7] [Citation(s) in RCA: 33] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2019] [Accepted: 10/07/2020] [Indexed: 11/08/2022] Open
Abstract
Abstract
Interfacial adhesion energy is a fundamental property of two-dimensional (2D) layered materials and van der Waals heterostructures due to their intrinsic ultrahigh surface to volume ratio, making adhesion forces very strong in many processes related to fabrication, integration and performance of devices incorporating 2D crystals. However, direct quantitative characterization of adhesion behavior of fresh and aged homo/heterointerfaces at nanoscale has remained elusive. Here, we use an atomic force microscopy technique to report precise adhesion measurements in ambient air through well-defined interactions of tip-attached 2D crystal nanomesas with 2D crystal and SiOx substrates. We quantify how different levels of short-range dispersive and long-range electrostatic interactions respond to airborne contaminants and humidity upon thermal annealing. We show that a simple but very effective precooling treatment can protect 2D crystal substrates against the airborne contaminants and thus boost the adhesion level at the interface of similar and dissimilar van der Waals heterostructures. Our combined experimental and computational analysis also reveals a distinctive interfacial behavior in transition metal dichalcogenides and graphite/SiOx heterostructures beyond the widely accepted van der Waals interaction.
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Wu T, Wu X, Li L, Hao M, Wu G, Zhang T, Chen S. Anisotropic Boron–Carbon Hetero‐Nanosheets for Ultrahigh Energy Density Supercapacitors. Angew Chem Int Ed Engl 2020. [DOI: 10.1002/ange.202011523] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/16/2023]
Affiliation(s)
- Tianyu Wu
- State Key Laboratory of Materials-Oriented Chemical Engineering College of Chemical Engineering Jiangsu Key Laboratory of Fine Chemicals and Functional Polymer Materials Nanjing Tech University (former: Nanjing University of Technology) Nanjing 210009 P. R. China
| | - Xingjiang Wu
- State Key Laboratory of Materials-Oriented Chemical Engineering College of Chemical Engineering Jiangsu Key Laboratory of Fine Chemicals and Functional Polymer Materials Nanjing Tech University (former: Nanjing University of Technology) Nanjing 210009 P. R. China
| | - Lianhui Li
- i-lab, Key Laboratory of multifunctional nanomaterials and smart systems Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) Chinese Academy of Science (CAS) Suzhou 215123 P. R. China
| | - Mingming Hao
- i-lab, Key Laboratory of multifunctional nanomaterials and smart systems Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) Chinese Academy of Science (CAS) Suzhou 215123 P. R. China
| | - Guan Wu
- State Key Laboratory of Materials-Oriented Chemical Engineering College of Chemical Engineering Jiangsu Key Laboratory of Fine Chemicals and Functional Polymer Materials Nanjing Tech University (former: Nanjing University of Technology) Nanjing 210009 P. R. China
| | - Ting Zhang
- i-lab, Key Laboratory of multifunctional nanomaterials and smart systems Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) Chinese Academy of Science (CAS) Suzhou 215123 P. R. China
| | - Su Chen
- State Key Laboratory of Materials-Oriented Chemical Engineering College of Chemical Engineering Jiangsu Key Laboratory of Fine Chemicals and Functional Polymer Materials Nanjing Tech University (former: Nanjing University of Technology) Nanjing 210009 P. R. China
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Wu T, Wu X, Li L, Hao M, Wu G, Zhang T, Chen S. Anisotropic Boron–Carbon Hetero‐Nanosheets for Ultrahigh Energy Density Supercapacitors. Angew Chem Int Ed Engl 2020; 59:23800-23809. [DOI: 10.1002/anie.202011523] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/22/2020] [Indexed: 11/12/2022]
Affiliation(s)
- Tianyu Wu
- State Key Laboratory of Materials-Oriented Chemical Engineering College of Chemical Engineering Jiangsu Key Laboratory of Fine Chemicals and Functional Polymer Materials Nanjing Tech University (former: Nanjing University of Technology) Nanjing 210009 P. R. China
| | - Xingjiang Wu
- State Key Laboratory of Materials-Oriented Chemical Engineering College of Chemical Engineering Jiangsu Key Laboratory of Fine Chemicals and Functional Polymer Materials Nanjing Tech University (former: Nanjing University of Technology) Nanjing 210009 P. R. China
| | - Lianhui Li
- i-lab, Key Laboratory of multifunctional nanomaterials and smart systems Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) Chinese Academy of Science (CAS) Suzhou 215123 P. R. China
| | - Mingming Hao
- i-lab, Key Laboratory of multifunctional nanomaterials and smart systems Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) Chinese Academy of Science (CAS) Suzhou 215123 P. R. China
| | - Guan Wu
- State Key Laboratory of Materials-Oriented Chemical Engineering College of Chemical Engineering Jiangsu Key Laboratory of Fine Chemicals and Functional Polymer Materials Nanjing Tech University (former: Nanjing University of Technology) Nanjing 210009 P. R. China
| | - Ting Zhang
- i-lab, Key Laboratory of multifunctional nanomaterials and smart systems Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) Chinese Academy of Science (CAS) Suzhou 215123 P. R. China
| | - Su Chen
- State Key Laboratory of Materials-Oriented Chemical Engineering College of Chemical Engineering Jiangsu Key Laboratory of Fine Chemicals and Functional Polymer Materials Nanjing Tech University (former: Nanjing University of Technology) Nanjing 210009 P. R. China
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Taboada-Gutiérrez J, Álvarez-Pérez G, Duan J, Ma W, Crowley K, Prieto I, Bylinkin A, Autore M, Volkova H, Kimura K, Kimura T, Berger MH, Li S, Bao Q, Gao XPA, Errea I, Nikitin AY, Hillenbrand R, Martín-Sánchez J, Alonso-González P. Broad spectral tuning of ultra-low-loss polaritons in a van der Waals crystal by intercalation. NATURE MATERIALS 2020; 19:964-968. [PMID: 32284598 DOI: 10.1038/s41563-020-0665-0] [Citation(s) in RCA: 77] [Impact Index Per Article: 19.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2019] [Accepted: 03/06/2020] [Indexed: 05/11/2023]
Abstract
Phonon polaritons-light coupled to lattice vibrations-in polar van der Waals crystals are promising candidates for controlling the flow of energy on the nanoscale due to their strong field confinement, anisotropic propagation and ultra-long lifetime in the picosecond range1-5. However, the lack of tunability of their narrow and material-specific spectral range-the Reststrahlen band-severely limits their technological implementation. Here, we demonstrate that intercalation of Na atoms in the van der Waals semiconductor α-V2O5 enables a broad spectral shift of Reststrahlen bands, and that the phonon polaritons excited show ultra-low losses (lifetime of 4 ± 1 ps), similar to phonon polaritons in a non-intercalated crystal (lifetime of 6 ± 1 ps). We expect our intercalation method to be applicable to other van der Waals crystals, opening the door for the use of phonon polaritons in broad spectral bands in the mid-infrared domain.
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Affiliation(s)
- Javier Taboada-Gutiérrez
- Departamento de Física, Universidad de Oviedo, Oviedo, Spain
- Nanomaterials and Nanotechnology Research Center (CINN-CSIC), El Entrego, Spain
| | - Gonzalo Álvarez-Pérez
- Departamento de Física, Universidad de Oviedo, Oviedo, Spain
- Nanomaterials and Nanotechnology Research Center (CINN-CSIC), El Entrego, Spain
| | - Jiahua Duan
- Departamento de Física, Universidad de Oviedo, Oviedo, Spain
- Nanomaterials and Nanotechnology Research Center (CINN-CSIC), El Entrego, Spain
| | - Weiliang Ma
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
| | - Kyle Crowley
- Department of Physics, Case Western Reserve University, Cleveland, OH, USA
| | - Iván Prieto
- Institute of Science and Technology Austria, Klosterneuburg, Austria
| | - Andrei Bylinkin
- Donostia International Physics Center (DIPC), Donostia/San Sebastián, Spain
- CIC nanoGUNE BRTA and Department of Electricity and Electronics, UPV/EHU, Donostia/San Sebastián, Spain
| | - Marta Autore
- CIC nanoGUNE BRTA and Department of Electricity and Electronics, UPV/EHU, Donostia/San Sebastián, Spain
| | - Halyna Volkova
- Centre des Matériaux, CNRS UMR 7633-PSL University, MINES ParisTech, Evry Cedex, France
| | - Kenta Kimura
- Department of Advanced Materials Science, University of Tokyo, Kashiwa, Japan
| | - Tsuyoshi Kimura
- Department of Advanced Materials Science, University of Tokyo, Kashiwa, Japan
| | - M-H Berger
- Centre des Matériaux, CNRS UMR 7633-PSL University, MINES ParisTech, Evry Cedex, France
| | - Shaojuan Li
- State Key Laboratory of Applied Optics, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, China
| | - Qiaoliang Bao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China
- State Key Laboratory of Applied Optics, Changchun Institute of Optics Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, China
| | - Xuan P A Gao
- Department of Physics, Case Western Reserve University, Cleveland, OH, USA
| | - Ion Errea
- Donostia International Physics Center (DIPC), Donostia/San Sebastián, Spain
- Fisika Aplikatua 1 Saila, University of the Basque Country (UPV/EHU), Donostia/San Sebastián, Spain
- Centro de Física de Materiales (CSIC-UPV/EHU), Donostia/San Sebastián, Spain
| | - Alexey Y Nikitin
- Donostia International Physics Center (DIPC), Donostia/San Sebastián, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
| | - Rainer Hillenbrand
- CIC nanoGUNE BRTA and Department of Electricity and Electronics, UPV/EHU, Donostia/San Sebastián, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
| | - Javier Martín-Sánchez
- Departamento de Física, Universidad de Oviedo, Oviedo, Spain.
- Nanomaterials and Nanotechnology Research Center (CINN-CSIC), El Entrego, Spain.
| | - Pablo Alonso-González
- Departamento de Física, Universidad de Oviedo, Oviedo, Spain.
- Nanomaterials and Nanotechnology Research Center (CINN-CSIC), El Entrego, Spain.
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Graphene/PbS quantum dot hybrid structure for application in near-infrared photodetectors. Sci Rep 2020; 10:12475. [PMID: 32719367 PMCID: PMC7385648 DOI: 10.1038/s41598-020-69302-6] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2020] [Accepted: 06/22/2020] [Indexed: 01/25/2023] Open
Abstract
A graphene-PbS quantum dot (QD) composite for application in high-performance near-infrared (NIR) photodetectors (PDs) is proposed in this study. A single-layer graphene flake and oleic acid-capped PbS QD composite is fabricated through the conventional sonication process, in hexane solution. Field emission scanning electron microscopy images of the graphene-PbS QD composite dispersed on a glass substrate confirm that the composite contains both aggregated graphene flakes and single-layer graphene with wrinkles; Transmission electron microscopy images reveal close packing with uniform size. The increased absorbance and quenched photoluminescence intensity of the graphene-PbS QD composite supports enhanced photoinduced charge transfer between graphene and the PbS QDs. Moreover, the specific Raman mode of the PbS QDs, embedded in the spectrum, is enhanced by combination with graphene, which can be interpreted by SERS as relevant to the photoinduced charge transfer between the Pbs QDs and graphene. For device application, a PD structure comprised by graphene-PbS QDs is fabricated. The photocurrent of the PD is measured using a conventional probe station with a 980-nm NIR laser diode. In the fabricated PD comprising graphene-PbS QDs, five-times higher photocurrent, 22% faster rise time, and 47% faster decay time are observed, compared to that comprising PbS QDs alone. This establishes the potential of the graphene-PbS QD composite for application in ultrathin, flexible, high-performance NIR PDs.
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Zhang Y, Xu J, Mei J, Sarina S, Wu Z, Liao T, Yan C, Sun Z. Strongly interfacial-coupled 2D-2D TiO 2/g-C 3N 4 heterostructure for enhanced visible-light induced synthesis and conversion. JOURNAL OF HAZARDOUS MATERIALS 2020; 394:122529. [PMID: 32200244 DOI: 10.1016/j.jhazmat.2020.122529] [Citation(s) in RCA: 49] [Impact Index Per Article: 12.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2020] [Revised: 03/05/2020] [Accepted: 03/11/2020] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) nanosheet-based nanocomposites have attracted intensive interest owing to the unique electronic and optical properties from their constituent phases and the synergistic effect from the heterojunctions. In this study, an interfacial coupled TiO2/g-C3N4 2D-2D heterostructure has been prepared via in situ growth of ultrathin 2D-TiO2 on dispersed g-C3N4 nanosheets. This strongly coupled 2D-2D TiO2/g-C3N4, different from the weakly bonded 2D-TiO2/g-C3N4 heterostructures produced by mechanical mixing, has unique electronic structures and chemical states due to strong interlayer charge transfer, confirmed by both experimental and theoretical analyses. Significantly enhanced visible-light responses have been observed, indicating a great potential for visible-light induced photosynthesis and photocatalysis. For benzylamine coupling reactions under visible-light irradiation, 80 % yield rate has been achieved, superior to ∼30 % yield rate when adopting either 2D-TiO2 or g-C3N4 structure. The enhanced photocatalytic activity can be attributed to the adequate separation of photo-generated electrons at the strongly coupled 2D-2D heterojunction interfaces.
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Affiliation(s)
- Yuanwen Zhang
- School of Chemistry and Physics, Queensland University of Technology, QLD, 4000, Australia
| | - Jingsan Xu
- School of Chemistry and Physics, Queensland University of Technology, QLD, 4000, Australia
| | - Jun Mei
- School of Chemistry and Physics, Queensland University of Technology, QLD, 4000, Australia
| | - Sarina Sarina
- School of Chemistry and Physics, Queensland University of Technology, QLD, 4000, Australia
| | - Ziyang Wu
- School of Chemistry and Physics, Queensland University of Technology, QLD, 4000, Australia; School of Mechanical, Medical and Process Engineering, Queensland University of Technology, QLD, 4000, Australia
| | - Ting Liao
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, QLD, 4000, Australia
| | - Cheng Yan
- School of Mechanical, Medical and Process Engineering, Queensland University of Technology, QLD, 4000, Australia
| | - Ziqi Sun
- School of Chemistry and Physics, Queensland University of Technology, QLD, 4000, Australia.
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