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Rong R, Liu Y, Nie X, Zhang W, Zhang Z, Liu Y, Guo W. The Interaction of 2D Materials With Circularly Polarized Light. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206191. [PMID: 36698292 PMCID: PMC10074140 DOI: 10.1002/advs.202206191] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
2D materials (2DMs), due to spin-valley locking degree of freedom, exhibit strongly bound exciton and chiral optical selection rules and become promising material candidates for optoelectronic and spin/valleytronic devices. Over the last decade, the manifesting of 2D materials by circularly polarized lights expedites tremendous fascinating phenomena, such as valley/exciton Hall effect, Moiré exciton, optical Stark effect, circular dichroism, circularly polarized photoluminescence, and spintronic property. In this review, recent advance in the interaction of circularly polarized light with 2D materials covering from graphene, black phosphorous, transition metal dichalcogenides, van der Waals heterostructures as well as small proportion of quasi-2D perovskites and topological materials, is overviewed. The confronted challenges and theoretical and experimental opportunities are also discussed, attempting to accelerate the prosperity of chiral light-2DMs interactions.
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Affiliation(s)
- Rong Rong
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Ying Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Xuchen Nie
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wei Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Yanpeng Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
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Li M, Wang Z, Han D, Shi X, Li T, Gao XP, Zhang Z. High photodetection performance on vertically oriented topological insulator Sb2Te3/Silicon heterostructure. J SOLID STATE CHEM 2022. [DOI: 10.1016/j.jssc.2022.123506] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/31/2022]
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3
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Ma Q, Grushin AG, Burch KS. Topology and geometry under the nonlinear electromagnetic spotlight. NATURE MATERIALS 2021; 20:1601-1614. [PMID: 34127824 DOI: 10.1038/s41563-021-00992-7] [Citation(s) in RCA: 25] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2020] [Accepted: 03/19/2021] [Indexed: 06/12/2023]
Abstract
For many materials, a precise knowledge of their dispersion spectra is insufficient to predict their ordered phases and physical responses. Instead, these materials are classified by the geometrical and topological properties of their wavefunctions. A key challenge is to identify and implement experiments that probe or control these quantum properties. In this Review, we describe recent progress in this direction, focusing on nonlinear electromagnetic responses that arise directly from quantum geometry and topology. We give an overview of the field by discussing theoretical ideas, experiments and the materials that drive them. We conclude by discussing how these techniques can be combined with device architectures to uncover, probe and ultimately control quantum phases with emergent topological and correlated properties.
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Affiliation(s)
- Qiong Ma
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Physics, Boston College, Chestnut Hill, MA, USA
| | - Adolfo G Grushin
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Kenneth S Burch
- Department of Physics, Boston College, Chestnut Hill, MA, USA.
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Abstract
2D layered materials with diverse exciting properties have recently attracted tremendous interest in the scientific community. Layered topological insulator Bi2Se3 comes into the spotlight as an exotic state of quantum matter with insulating bulk states and metallic Dirac-like surface states. Its unique crystal and electronic structure offer attractive features such as broadband optical absorption, thickness-dependent surface bandgap and polarization-sensitive photoresponse, which enable 2D Bi2Se3 to be a promising candidate for optoelectronic applications. Herein, we present a comprehensive summary on the recent advances of 2D Bi2Se3 materials. The structure and inherent properties of Bi2Se3 are firstly described and its preparation approaches (i.e., solution synthesis and van der Waals epitaxy growth) are then introduced. Moreover, the optoelectronic applications of 2D Bi2Se3 materials in visible-infrared detection, terahertz detection, and opto-spintronic device are discussed in detail. Finally, the challenges and prospects in this field are expounded on the basis of current development.
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Affiliation(s)
- Fakun K. Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Sijie J. Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Tianyou Y. Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
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Xie F, Lian Z, Zhang S, Wang T, Miao S, Song Z, Ying Z, Pan XC, Long M, Zhang M, Fei F, Hu W, Yu G, Song F, Kang TT, Shi SF. Reversible engineering of topological insulator surface state conductivity through optical excitation. NANOTECHNOLOGY 2021; 32:17LT01. [PMID: 33620033 DOI: 10.1088/1361-6528/abde01] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphene and various semiconductors have been explored for this purpose, while non-ideal interfaces often limit the performance. The topological insulator (TI) is a natural hybrid system, with the surface states hosting high-mobility Dirac fermions and the small-bandgap semiconducting bulk state strongly absorbing light. In this work, we show a large photocurrent response from a field effect transistor device based on intrinsic TI Sn-Bi1.1Sb0.9Te2S (Sn-BSTS). The photocurrent response is non-volatile and sensitively depends on the initial Fermi energy of the surface state, and it can be erased by controlling the gate voltage. Our observations can be explained with a remote photo-doping mechanism, in which the light excites the defects in the bulk and frees the localized carriers to the surface state. This photodoping modulates the surface state conductivity without compromising the mobility, and it also significantly modify the quantum Hall effect of the surface state. Our work thus illustrates a route to reversibly manipulate the surface states through optical excitation, shedding light into utilizing topological surface states for quantum optoelectronics.
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Affiliation(s)
- Faji Xie
- National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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6
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Deep tuning of photo-thermoelectricity in topological surface states. Sci Rep 2020; 10:16761. [PMID: 33028944 PMCID: PMC7541493 DOI: 10.1038/s41598-020-73950-z] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/08/2020] [Accepted: 09/22/2020] [Indexed: 11/08/2022] Open
Abstract
Three-dimensional topological insulators have been demonstrated in recent years, which possess intriguing gapless, spin-polarized Dirac states with linear dispersion only on the surface. The spin polarization of the topological surface states is also locked to its momentum, which allows controlling motion of electrons using optical helicity, i.e., circularly polarized light. The electrical and thermal transport can also be significantly tuned by the helicity-control of surface state electrons. Here, we report studies of photo-thermoelectric effect of the topological surface states in Bi2Te2Se thin films with large tunability using varied gate voltages and optical helicity. The Seebeck coefficient can be altered by more than five times compared to the case without spin injection. This deep tuning is originated from the optical helicity-induced photocurrent which is shown to be enhanced, reduced, turned off, and even inverted due to the change of the accessed band structures by electrical gating. The helicity-selected topological surface state thus has a large effect on thermoelectric transport, demonstrating great opportunities for realizing helicity control of optoelectronic and thermal devices.
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Yu J, Xia L, Zhu K, Pan Q, Zeng X, Chen Y, Liu Y, Yin C, Cheng S, Lai Y, He K, Xue Q. Control of Circular Photogalvanic Effect of Surface States in the Topological Insulator Bi 2Te 3 via Spin Injection. ACS APPLIED MATERIALS & INTERFACES 2020; 12:18091-18100. [PMID: 32212669 DOI: 10.1021/acsami.9b23389] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The circular photogalvanic effect (CPGE) provides a method utilizing circularly polarized light to control spin photocurrent and will also lead to novel opto-spintronic devices. The CPGE of three-dimensional topological insulator Bi2Te3 with different substrates and thicknesses has been systematically investigated. It is found that the CPGE current can be dramatically tuned by adopting different substrates. The CPGE current of the Bi2Te3 films on Si substrates are more than two orders larger than that on SrTiO3 substrates when illuminated by 1064 nm light, which can be attributed to the modulation effect due to the spin injection from Si substrate to Bi2Te3 films, larger light absorption coefficient, and stronger inequivalence between the top and bottom surface states for Bi2Te3 films grown on Si substrates. The excitation power dependence of the CPGE current of Bi2Te3 films on Si substrates shows a saturation at high power especially for thicker samples, whereas that on SrTiO3 substrates almost linearly increases with excitation power. Temperature dependence of the CPGE current of Bi2Te3 films on Si substrates first increases and then decreases with decreasing temperature, whereas that on SrTiO3 substrates changes monotonously with temperature. These interesting phenomena of the CPGE current of Bi2Te3 films on Si substrates are related to the spin injection from Si substrates to Bi2Te3 films. Our work not only intrigues new physics but also provides a method to effectively manipulate the helicity-dependent photocurrent via spin injection.
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Affiliation(s)
- Jinling Yu
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Lijia Xia
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Kejing Zhu
- Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Qinggao Pan
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Xiaolin Zeng
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yonghai Chen
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yu Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chunming Yin
- School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
- CAS Key Laboratory of Microscale Magnetic Resonance, Department of Modern Physics, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Shuying Cheng
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
- Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu ,China
| | - Yunfeng Lai
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China
| | - Ke He
- Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
| | - Qikun Xue
- Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China
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Wang YM, Yu JL, Zeng XL, Chen YH, Liu Y, Cheng SY, Lai YF, Yin CM, He K, Xue QK. Temperature and excitation wavelength dependence of circular and linear photogalvanic effect in a three dimensional topological insulator Bi 2Se 3. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:415702. [PMID: 31220819 DOI: 10.1088/1361-648x/ab2b55] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The circular (CPGE) and linear photogalvanic effect (LPGE) of a three-dimensional topological insulator Bi2Se3 thin film of seven quintuple layers excited by near-infrared (1064 nm) and mid-infrared (10.6 [Formula: see text]m) radiations have been investigated. The comparison of the CPGE current measured parallel and perpendicular to the incident plane, together with the comparison of the CPGE current under front and back illuminations, indicates that the CPGE under front illumination of 1064 nm light is dominated by the top surface states of the Bi2Se3 thin film. The CPGE current excited by 10.6 [Formula: see text]m light is about one order larger than that excited by 1064 nm light, which may be attributed to the smaller cancelation effect of the CPGE generated in the two-dimensional electron gas when excited by 10.6 [Formula: see text]m light. Under the excitation of 1064 nm light, the LPGE current is dominated by the component which shows an even parity of incident angles, while the LPGE current excited by 10.6 [Formula: see text]m light is mainly contributed by the component which is an odd parity of incident angles. Both of the CPGE and LPGE currents excited by 1064 nm decrease with increasing temperature, which may be owing to the decrease of the momentum relaxation time and the stronger electron-electron scattering with increasing temperature, respectively.
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Affiliation(s)
- Y M Wang
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, People's Republic of China
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9
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Guan H, Tang N, Huang H, Zhang X, Su M, Liu X, Liao L, Ge W, Shen B. Inversion Symmetry Breaking Induced Valley Hall Effect in Multilayer WSe 2. ACS NANO 2019; 13:9325-9331. [PMID: 31322851 DOI: 10.1021/acsnano.9b03947] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional transition metal dichalcogenides possess the K (K') valley degree of freedom (DOF). Based on that, the research on valleytronics draws considerable attention. In this report, by breaking the spatial-inversion symmetry by an out-of-plane electric field, the valley Hall effect (VHE) is observed in multilayer tungsten diselenide (WSe2) at room temperature. The non-zero Berry curvature emerges, leading to the carriers at K (K') valley being deflected to the opposite sides of the channel, giving rise to a spatial polarization of carriers at K (K') valleys in multilayer WSe2. This observation of the VHE illustrates that the K (K') valley DOF can be generated in multilayer WSe2, which makes it an alternative candidate for valleytronics.
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Affiliation(s)
- Hongming Guan
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , P.R. China
| | - Ning Tang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , P.R. China
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P.R. China
- Nano-optoelectronics Frontier Center of Ministry of Education , Peking University , Beijing 100871 , P.R. China
| | - Hao Huang
- Department of Physics and Key Laboratory of Artificial Mircro- and Nano-structures of Ministry of Education , Wuhan University , Wuhan 430072 , P.R. China
| | - Xiaoyue Zhang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , P.R. China
| | - Meng Su
- Department of Physics and Key Laboratory of Artificial Mircro- and Nano-structures of Ministry of Education , Wuhan University , Wuhan 430072 , P.R. China
| | - Xingchen Liu
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , P.R. China
| | - Lei Liao
- Department of Physics and Key Laboratory of Artificial Mircro- and Nano-structures of Ministry of Education , Wuhan University , Wuhan 430072 , P.R. China
- State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, and School of Physics and Electronics , Hunan University , Changsha 410082 , P.R. China
| | - Weikun Ge
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , P.R. China
| | - Bo Shen
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics , Peking University , Beijing 100871 , P.R. China
- Collaborative Innovation Center of Quantum Matter , Beijing 100871 , P.R. China
- Nano-optoelectronics Frontier Center of Ministry of Education , Peking University , Beijing 100871 , P.R. China
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Cha S, Noh M, Kim J, Son J, Bae H, Lee D, Kim H, Lee J, Shin HS, Sim S, Yang S, Lee S, Shim W, Lee CH, Jo MH, Kim JS, Kim D, Choi H. Generation, transport and detection of valley-locked spin photocurrent in WSe 2-graphene-Bi 2Se 3 heterostructures. NATURE NANOTECHNOLOGY 2018; 13:910-914. [PMID: 30038368 DOI: 10.1038/s41565-018-0195-y] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2018] [Accepted: 06/12/2018] [Indexed: 06/08/2023]
Abstract
Quantum optoelectronic devices capable of isolating a target degree of freedom (DoF) from other DoFs have allowed for new applications in modern information technology. Many works on solid-state spintronics have focused on methods to disentangle the spin DoF from the charge DoF1, yet many related issues remain unresolved. Although the recent advent of atomically thin transition metal dichalcogenides (TMDs) has enabled the use of valley pseudospin as an alternative DoF2,3, it is nontrivial to separate the spin DoF from the valley DoF since the time-reversal valley DoF is intrinsically locked with the spin DoF4. Here, we demonstrate lateral TMD-graphene-topological insulator hetero-devices with the possibility of such a DoF-selective measurement. We generate the valley-locked spin DoF via a circular photogalvanic effect in an electric-double-layer WSe2 transistor. The valley-locked spin photocarriers then diffuse in a submicrometre-long graphene layer, and the spin DoF is measured separately in the topological insulator via non-local electrical detection using the characteristic spin-momentum locking. Operating at room temperature, our integrated devices exhibit a non-local spin polarization degree of higher than 0.5, providing the potential for coupled opto-spin-valleytronic applications that independently exploit the valley and spin DoFs.
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Affiliation(s)
- Soonyoung Cha
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea
| | - Minji Noh
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea
| | - Jehyun Kim
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Jangyup Son
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA
| | - Hyemin Bae
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea
| | - Doeon Lee
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
| | - Hoil Kim
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, Korea
- Centre for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Korea
| | - Jekwan Lee
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea
| | - Ho-Seung Shin
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea
| | - Sangwan Sim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea
- Centre for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Korea
| | - Seunghoon Yang
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, Korea
| | - Sooun Lee
- Department of Materials Science and Engineering, Yonsei University, Seoul, Korea
| | - Wooyoung Shim
- Department of Materials Science and Engineering, Yonsei University, Seoul, Korea
| | - Chul-Ho Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, Korea
| | - Moon-Ho Jo
- Centre for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Korea
- Division of Advanced Materials Science and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Korea
| | - Jun Sung Kim
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, Korea
- Centre for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang, Korea
| | - Dohun Kim
- Department of Physics and Astronomy, Seoul National University, Seoul, Korea
| | - Hyunyong Choi
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea.
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Li S, Wang T, Chen X, Lu W, Xie Y, Hu Y. Self-powered photogalvanic phosphorene photodetectors with high polarization sensitivity and suppressed dark current. NANOSCALE 2018; 10:7694-7701. [PMID: 29651480 DOI: 10.1039/c8nr00484f] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
High polarization sensitivity, suppressed dark current and low energy consumption are all desirable device properties for photodetectors. In this work, we propose phosphorene-based photodetectors that are driven using photogalvanic effects (PGEs). The inversion symmetry of pristine phosphorene is broken using either application of an out-of-plane gate voltage or a heterostructure that is composed of the original phosphorene and blue phosphorene. The potential asymmetry enables PGEs under illumination by polarized light. Quantum transport calculations show that robust photocurrents are indeed generated by PGEs under a zero external bias voltage because of the broken inversion symmetry. These results indicate that the proposed photodetector is self-powered. In addition, the zero bias voltage eliminates the dark currents that are caused by application of an external bias voltage to traditional photodetectors. High polarization sensitivity to both linearly and circularly polarized light can also be realized, with extinction ratios ranging up to 102. The photoresponse of the proposed phosphorene/blue phosphorene heterostructure can be greatly enhanced by gating and is several orders of magnitude higher than that in gated phosphorene.
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Affiliation(s)
- Shuaishuai Li
- Department of Physics, Shanghai Normal University, Shanghai 200232, P.R. China.
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12
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Seifert P, Vaklinova K, Ganichev S, Kern K, Burghard M, Holleitner AW. Spin Hall photoconductance in a three-dimensional topological insulator at room temperature. Nat Commun 2018; 9:331. [PMID: 29362413 PMCID: PMC5780383 DOI: 10.1038/s41467-017-02671-1] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2017] [Accepted: 12/18/2017] [Indexed: 11/29/2022] Open
Abstract
Three-dimensional topological insulators are a class of Dirac materials, wherein strong spin-orbit coupling leads to two-dimensional surface states. The latter feature spin-momentum locking, i.e., each momentum vector is associated with a spin locked perpendicularly to it in the surface plane. While the principal spin generation capability of topological insulators is well established, comparatively little is known about the interaction of the spins with external stimuli like polarized light. We observe a helical, bias-dependent photoconductance at the lateral edges of topological Bi2Te2Se platelets for perpendicular incidence of light. The same edges exhibit also a finite bias-dependent Kerr angle, indicative of spin accumulation induced by a transversal spin Hall effect in the bulk states of the Bi2Te2Se platelets. A symmetry analysis shows that the helical photoconductance is distinct to common longitudinal photoconductance and photocurrent phenomena, but consistent with optically injected spins being transported in the side facets of the platelets. While the spin generation in topological insulators is well studied, little is known about the interaction of the spins with external stimuli. Here, Seifert et al. observe a helical, bias-dependent photoconductance at the lateral edges of topological Bi2Te2Se platelets for perpendicular incidence of light, distinct to common longitudinal photoconductance phenomena.
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Affiliation(s)
- Paul Seifert
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4a, D-85748, Garching, Germany
| | - Kristina Vaklinova
- Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569, Stuttgart, Germany
| | - Sergey Ganichev
- Terahertz Center, University of Regensburg, D-93040, Regensburg, Germany
| | - Klaus Kern
- Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569, Stuttgart, Germany.,Institut de Physique, Ecole Polytechnique Fédérale de Lausanne, CH-1015, Lausanne, Switzerland
| | - Marko Burghard
- Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-70569, Stuttgart, Germany
| | - Alexander W Holleitner
- Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4a, D-85748, Garching, Germany.
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13
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Luo S, He L, Li M. Spin-momentum locked interaction between guided photons and surface electrons in topological insulators. Nat Commun 2017; 8:2141. [PMID: 29247165 PMCID: PMC5732163 DOI: 10.1038/s41467-017-02264-y] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/14/2017] [Accepted: 11/16/2017] [Indexed: 11/16/2022] Open
Abstract
The propagation of electrons and photons can respectively have the spin-momentum locking effect which correlates spin with linear momentum. For surface electrons in three-dimensional topological insulators (TIs), their spin is locked to the transport direction. Analogously, photons in optical waveguides carry transverse spin angular momentum which is also locked to the propagation direction. A direct connection between electron and photon spins occurs in TIs due to spin-dependent selection rules of optical transitions. Here we demonstrate an optoelectronic device that integrates a TI with a photonic waveguide. Interaction between photons in the waveguide and surface electrons in a Bi2Se3 layer generates a directional, spin-polarized photocurrent. Because of spin-momentum locking, changing light propagation direction reverses photon spin and thus the direction of the photocurrent. Our device represents a way of implementing coupled spin–orbit interaction between electrons and photons and may lead to applications in opto-spintronics and quantum information processing. Whether topologically protected electron moving and photon moving can couple each other remains an interesting question. Here, Luo et al. report reversion of photon spin and the direction of the photocurrent in a topological insulator by changing light propagation direction.
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Affiliation(s)
- Siyuan Luo
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.,Institute of Fundamental and Frontier Sciences, State Key Laboratory of Electronics Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu, 610054, China
| | - Li He
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.,School of Physics and Astronomy, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Mo Li
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.
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14
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Yu J, Zeng X, Zhang L, He K, Cheng S, Lai Y, Huang W, Chen Y, Yin C, Xue Q. Photoinduced Inverse Spin Hall Effect of Surface States in the Topological Insulator Bi 2Se 3. NANO LETTERS 2017; 17:7878-7885. [PMID: 29141404 DOI: 10.1021/acs.nanolett.7b04172] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The three-dimensional (3D) topological insulator (TI) Bi2Se3 exhibits topologically protected, linearly dispersing Dirac surface states (SSs). To access the intriguing properties of these SSs, it is important to distinguish them from the coexisting two-dimensional electron gas (2DEG) on the surface. Here, we use circularly polarized light to induce the inverse spin Hall effect in a Bi2Se3 thin film at different temperatures (i.e., from 77 to 300 K). It is demonstrated that the photoinduced inverse spin Hall effect (PISHE) of the top SSs and the 2DEG can be separated based on their opposite signs. The temperature and power dependence of the PISHE also confirms our method. Furthermore, it is found that the PISHE in the 2DEG is dominated by the extrinsic mechanism, as revealed by the temperature dependence of the PISHE.
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Affiliation(s)
- Jinling Yu
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University , Fuzhou 350108, Fujian, China
| | - Xiaolin Zeng
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University , Fuzhou 350108, Fujian, China
| | - Liguo Zhang
- Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China
| | - Ke He
- Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China
| | - Shuying Cheng
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University , Fuzhou 350108, Fujian, China
- Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University , Changzhou 213164, Jiangsu China
| | - Yunfeng Lai
- Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University , Fuzhou 350108, Fujian, China
- Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University , Changzhou 213164, Jiangsu China
| | - Wei Huang
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
| | - Yonghai Chen
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences , Beijing 100049, China
| | - Chunming Yin
- School of Physics, University of New South Wales , Sydney, New South Wales 2052, Australia
- CAS Key Laboratory of Microscale Magnetic Resonance, Department of Modern Physics, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China , Hefei 230026, China
| | - Qikun Xue
- Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China
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15
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Pan Y, Wang QZ, Yeats AL, Pillsbury T, Flanagan TC, Richardella A, Zhang H, Awschalom DD, Liu CX, Samarth N. Helicity dependent photocurrent in electrically gated (Bi 1-x Sb x ) 2Te 3 thin films. Nat Commun 2017; 8:1037. [PMID: 29051541 PMCID: PMC5648839 DOI: 10.1038/s41467-017-00711-4] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/02/2016] [Accepted: 07/20/2017] [Indexed: 11/09/2022] Open
Abstract
Circularly polarized photons are known to generate a directional helicity-dependent photocurrent in three-dimensional topological insulators at room temperature. Surprisingly, the phenomenon is readily observed at photon energies that excite electrons to states far above the spin-momentum locked Dirac cone and the underlying mechanism for the helicity-dependent photocurrent is still not understood. Here we show a comprehensive study of the helicity-dependent photocurrent in (Bi1-x Sb x )2Te3 thin films as a function of the incidence angle of the optical excitation, its wavelength and the gate-tuned chemical potential. Our observations allow us to unambiguously identify the circular photo-galvanic effect as the dominant mechanism for the helicity-dependent photocurrent. Additionally, we use an analytical model to relate the directional nature of the photocurrent to asymmetric optical transitions between the topological surface states and bulk bands. The insights we obtain are important for engineering opto-spintronic devices that rely on optical steering of spin and charge currents.
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Affiliation(s)
- Yu Pan
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802-6300, USA
| | - Qing-Ze Wang
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802-6300, USA
| | - Andrew L Yeats
- Institute for Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA
| | - Timothy Pillsbury
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802-6300, USA
| | - Thomas C Flanagan
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802-6300, USA
| | - Anthony Richardella
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802-6300, USA
| | - Haijun Zhang
- National Laboratory of Solid State Microstructures, School of Physics and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - David D Awschalom
- Institute for Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA
| | - Chao-Xing Liu
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802-6300, USA
| | - Nitin Samarth
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802-6300, USA.
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16
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Seifert P, Vaklinova K, Kern K, Burghard M, Holleitner A. Surface State-Dominated Photoconduction and THz Generation in Topological Bi 2Te 2Se Nanowires. NANO LETTERS 2017; 17:973-979. [PMID: 28081604 PMCID: PMC5338589 DOI: 10.1021/acs.nanolett.6b04312] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2016] [Revised: 01/12/2017] [Indexed: 06/04/2023]
Abstract
Topological insulators constitute a fascinating class of quantum materials with nontrivial, gapless states on the surface and insulating bulk states. By revealing the optoelectronic dynamics in the whole range from femto- to microseconds, we demonstrate that the long surface lifetime of Bi2Te2Se nanowires allows us to access the surface states by a pulsed photoconduction scheme and that there is a prevailing bolometric response of the surface states. The interplay of the surface and bulk states dynamics on the different time scales gives rise to a surprising physical property of Bi2Te2Se nanowires: their pulsed photoconductance changes polarity as a function of laser power. Moreover, we show that single Bi2Te2Se nanowires can be used as THz generators for on-chip high-frequency circuits at room temperature. Our results open the avenue for single Bi2Te2Se nanowires as active modules in optoelectronic high-frequency and THz circuits.
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Affiliation(s)
- Paul Seifert
- Walter Schottky
Institut and Physik-Department, Technische
Universität München, Am Coulombwall 4a, D-85748 Garching, Germany
| | - Kristina Vaklinova
- Max-Planck-Institut
für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany
| | - Klaus Kern
- Max-Planck-Institut
für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany
- Institut de Physique, Ecole Polytechnique Fédérale
de Lausanne, CH-1015 Lausanne, Switzerland
| | - Marko Burghard
- Max-Planck-Institut
für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany
| | - Alexander Holleitner
- Walter Schottky
Institut and Physik-Department, Technische
Universität München, Am Coulombwall 4a, D-85748 Garching, Germany
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17
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Ultrafast photocurrents at the surface of the three-dimensional topological insulator Bi 2Se 3. Nat Commun 2016; 7:13259. [PMID: 27796297 PMCID: PMC5095513 DOI: 10.1038/ncomms13259] [Citation(s) in RCA: 53] [Impact Index Per Article: 6.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/10/2015] [Accepted: 09/16/2016] [Indexed: 12/26/2022] Open
Abstract
Three-dimensional topological insulators are fascinating materials with insulating bulk yet metallic surfaces that host highly mobile charge carriers with locked spin and momentum. Remarkably, surface currents with tunable direction and magnitude can be launched with tailored light beams. To better understand the underlying mechanisms, the current dynamics need to be resolved on the timescale of elementary scattering events (∼10 fs). Here, we excite and measure photocurrents in the model topological insulator Bi2Se3 with a time resolution of 20 fs by sampling the concomitantly emitted broadband terahertz (THz) electromagnetic field from 0.3 to 40 THz. Strikingly, the surface current response is dominated by an ultrafast charge transfer along the Se–Bi bonds. In contrast, photon-helicity-dependent photocurrents are found to be orders of magnitude smaller than expected from generation scenarios based on asymmetric depopulation of the Dirac cone. Our findings are of direct relevance for broadband optoelectronic devices based on topological-insulator surface currents. Surface currents in topological insulators can be controlled by light, but the underlying mechanisms are not well understood. Here, Braun et al. report an ultrafast shift photocurrent at the surface of Ca-doped Bi2Se3, whereas injection currents are much smaller than expected from asymmetric depopulation of the Dirac cone.
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18
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Zhang H, Zhang X, Liu C, Lee ST, Jie J. High-Responsivity, High-Detectivity, Ultrafast Topological Insulator Bi2Se3/Silicon Heterostructure Broadband Photodetectors. ACS NANO 2016; 10:5113-22. [PMID: 27116332 DOI: 10.1021/acsnano.6b00272] [Citation(s) in RCA: 121] [Impact Index Per Article: 15.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
As an exotic state of quantum matter, topological insulators have promising applications in new-generation electronic and optoelectronic devices. The realization of these applications relies critically on the preparation and properties understanding of high-quality topological insulators, which however are mainly fabricated by high-cost methods like molecular beam epitaxy. We here report the successful preparation of high-quality topological insulator Bi2Se3/Si heterostructure having an atomically abrupt interface by van der Waals epitaxy growth of Bi2Se3 films on Si wafer. A simple, low-cost physical vapor deposition (PVD) method was employed to achieve the growth of the Bi2Se3 films. The Bi2Se3/Si heterostructure exhibited excellent diode characteristics with a pronounced photoresponse under light illumination. The built-in potential at the Bi2Se3/Si interface greatly facilitated the separation and transport of photogenerated carriers, enabling the photodetector to have a high light responsivity of 24.28 A W(-1), a high detectivity of 4.39 × 10(12) Jones (Jones = cm Hz(1/2) W(-1)), and a fast response speed of aproximately microseconds. These device parameters represent the highest values for topological insulator-based photodetectors. Additionally, the photodetector possessed broadband detection ranging from ultraviolet to optical telecommunication wavelengths. Given the simple device architecture and compatibility with silicon technology, the topological insulator Bi2Se3/Si heterostructure holds great promise for high-performance electronic and optoelectronic applications.
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Affiliation(s)
- Hongbin Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, P. R. China
| | - Xiujuan Zhang
- Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, P. R. China
| | - Chang Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, P. R. China
| | - Shuit-Tong Lee
- Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, P. R. China
| | - Jiansheng Jie
- Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University , Suzhou, Jiangsu 215123, P. R. China
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19
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Liu Y, Tom K, Wang X, Huang C, Yuan H, Ding H, Ko C, Suh J, Pan L, Persson KA, Yao J. Dynamic Control of Optical Response in Layered Metal Chalcogenide Nanoplates. NANO LETTERS 2016; 16:488-96. [PMID: 26599063 DOI: 10.1021/acs.nanolett.5b04140] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Tunable optical transitions in ultrathin layered 2-dimensional (2D) materials unveil the electronic structures of materials and provide exciting prospects for potential applications in optics and photonics. Here, we present our realization of dynamic optical modulation of layered metal chalcogenide nanoplates using ionic liquid (IL) gating over a wide spectral range. The IL gating significantly increased the tuning range of the Fermi level and, as a result, substantially altered the optical transitions in the nanoplates. Using heavily n-doped Bi2Se3 nanoplates, we substantially modulated the light transmission through the ultrathin layer. A tunable, high-transmission spectral window in the visible to near-infrared region has been observed due to simultaneous shifts of both the plasma edge and absorption edge of the material. On the other hand, optical response of multilayer MoSe2 flakes gated by IL has shown enhanced transmission in both positive and negative biases, which is consistent with their ambipolar electrical behavior. The electrically controlled optical property tuning in metal chalcogenide material systems provides new opportunities for potential applications, such as wide spectral range optical modulators, optical filters, and electrically controlled smart windows with extremely low material consumption.
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Affiliation(s)
- Yanping Liu
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
| | - Kyle Tom
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
| | - Xi Wang
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
| | - Chunming Huang
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
| | - Hongtao Yuan
- Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
| | | | - Changhyun Ko
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
| | - Joonki Suh
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
| | - Lawrence Pan
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
| | - Kristin A Persson
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
| | - Jie Yao
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
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20
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Politano A, Silkin VM, Nechaev IA, Vitiello MS, Viti L, Aliev ZS, Babanly MB, Chiarello G, Echenique PM, Chulkov EV. Interplay of Surface and Dirac Plasmons in Topological Insulators: The Case of Bi_{2}Se_{3}. PHYSICAL REVIEW LETTERS 2015; 115:216802. [PMID: 26636863 DOI: 10.1103/physrevlett.115.216802] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2015] [Indexed: 06/05/2023]
Abstract
We have investigated plasmonic excitations at the surface of Bi_{2}Se_{3}(0001) via high-resolution electron energy loss spectroscopy. For low parallel momentum transfer q_{∥}, the loss spectrum shows a distinctive feature peaked at 104 meV. This mode varies weakly with q_{∥}. The behavior of its intensity as a function of primary energy and scattering angle indicates that it is a surface plasmon. At larger momenta (q_{∥}~0.04 Å^{-1}), an additional peak, attributed to the Dirac plasmon, becomes clearly defined in the loss spectrum. Momentum-resolved loss spectra provide evidence of the mutual interaction between the surface plasmon and the Dirac plasmon of Bi_{2}Se_{3}. The proposed theoretical model accounting for the coexistence of three-dimensional doping electrons and two-dimensional Dirac fermions accurately represents the experimental observations. The results reveal novel routes for engineering plasmonic devices based on topological insulators.
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Affiliation(s)
- A Politano
- Department of Physics, University of Calabria, 87036 Rende (CS), Italy
| | - V M Silkin
- Donostia International Physics Center (DIPC), Paseo de Manuel Lardizabal 4, 20018 San Sebastián/Donostia, Spain
- Departamento de Física de Materiales, Universidad del País Vasco, Apartado 1072, 20080 San Sebastián/Donostia, Spain
- IKERBASQUE, Basque Foundation for Science, 48011 Bilbao, Spain
| | - I A Nechaev
- Donostia International Physics Center (DIPC), Paseo de Manuel Lardizabal 4, 20018 San Sebastián/Donostia, Spain
- Tomsk State University, 634050 Tomsk, Russian Federation
- Saint Petersburg State University, 198504 Saint Petersburg, Russian Federation
| | - M S Vitiello
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - L Viti
- NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Z S Aliev
- Donostia International Physics Center (DIPC), Paseo de Manuel Lardizabal 4, 20018 San Sebastián/Donostia, Spain
- Institute of Catalysis and Inorganic Chemistry, ANAS, AZ1143 Baku, Azerbaijian
- Institute of Physics, ANAS, AZ1143 Baku, Azerbaijian
| | - M B Babanly
- Institute of Catalysis and Inorganic Chemistry, ANAS, AZ1143 Baku, Azerbaijian
| | - G Chiarello
- Department of Physics, University of Calabria, 87036 Rende (CS), Italy
- CNISM, Consorzio Nazionale Interuniversitario per le Scienze Fisiche della Materia, Via della Vasca Navale, 84, 00146 Roma, Italy
| | - P M Echenique
- Donostia International Physics Center (DIPC), Paseo de Manuel Lardizabal 4, 20018 San Sebastián/Donostia, Spain
- Departamento de Física de Materiales, Universidad del País Vasco, Apartado 1072, 20080 San Sebastián/Donostia, Spain
- Centro de Física de Materiales CFM-Materials Physics Center MPC, Centro Mixto CSIC-UPV/EHU, Paseo de Manuel Lardizabal 5, 20018 San Sebastián/Donostia, Spain
| | - E V Chulkov
- Donostia International Physics Center (DIPC), Paseo de Manuel Lardizabal 4, 20018 San Sebastián/Donostia, Spain
- Departamento de Física de Materiales, Universidad del País Vasco, Apartado 1072, 20080 San Sebastián/Donostia, Spain
- Tomsk State University, 634050 Tomsk, Russian Federation
- Saint Petersburg State University, 198504 Saint Petersburg, Russian Federation
- Centro de Física de Materiales CFM-Materials Physics Center MPC, Centro Mixto CSIC-UPV/EHU, Paseo de Manuel Lardizabal 5, 20018 San Sebastián/Donostia, Spain
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