Downscaling of Organic Field-Effect Transistors based on High-Mobility Semiconducting Blends for High-Frequency Operation

Small molecule/polymer semiconductor blends are promising solutions for the development of high-performing organic electronics. They are able to combine ease in solution processability, thanks to the tunable rheological properties of polymeric inks, with outstanding charge transport properties thanks to high crystalline phases of small molecules. However, because of charge injection issues, so far such good performances are only demonstrated in ad-hoc device architectures, not suited for high-frequency applications, where transistor dimensions require downscaling. Here, the successful integration of the most performing blend reported to date, based on 2,7-dioctyl[1] benzothieno[3,2-b][1]benzothiophene (C8-BTBT) and poly(indacenodithiophene-co-benzothiadiazole) (C16IDT-BT), in OFETs characterized by channel and overlap lengths equal to 1.3 and 1.9 µm, respectively, is demonstrated, enabling a transition frequency of 23 MHz at -8 V. Two key aspects allowed such result: molecular doping, leading to width-normalized contact resistance of only 260 Ωcm, allowing to retain an apparent field-effect mobility as high as 3 cm2/(Vs) in short channel devices, and the implementation of a high capacitance dielectric stack, enabling the reduction of operating voltages below 10 V and the overcoming of self-heating issues. These results represent a fundamental step for the future development of low-cost and high-speed printed electronics for IoT applications.

Hysteresis-Free and Bias-Stable Organic Transistors Fabricated by Dip-Coating with a Vertical-Phase-Separation Structure

The morphology of organic films plays a pivotal role in determining the performance of transistor devices. While the dip-coating technique is capable of producing highly oriented organic films, it often encounters challenges such as limited coverage and the presence of defects in gaps between strips, adversely affecting device performance. In this study, we address these challenges by increasing solution viscosity through the incorporation of a substantial proportion of dielectric polymers, thereby enhancing the participation of additional molecules during the film formation process when pulled up. This method produces continuous and oriented organic films with a notable absence of gaps, significantly improving the carrier mobility of transistor devices by more than twofold. Importantly, the fabricated devices exhibit remarkable reliability, showing no hysteresis even after 200 cycles of measurement. Furthermore, the current and threshold voltages of the devices demonstrate exceptional stability, maintaining steady after 10,000 s of bias measurement. This approach provides a solution for the cost-effective and large-scale production of organic transistors, contributing significantly to the advancement of organic electronics.

Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric

In this study, a high-K material, aluminum oxide (AlO_x), as the dielectric of organic field-effect transistors (OFETs) was used to reduce the threshold and operating voltages, while focusing on achieving high-electrical-stability OFETs and retention in OFET-based memory devices. To achieve this, we modified the gate dielectric of OFETs using polyimide (PI) with different solid contents to tune the properties and reduce the trap state density of the gate dielectric, leading to controllable stability in the N, N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C₁₃)-based OFETs. Thus, gate field-induced stress can be compensated for by the carriers accumulated due to the dipole field created by electric dipoles within the PI layer, thereby improving the OFET's performance and stability. Moreover, if the OFET is modified by PI with different solid contents, it can operate more stably under fixed gate bias stress over time than the device with AlO_x as the dielectric layer only can. Furthermore, the OFET-based memory devices with PI film showed good memory retention and durability. In summary, we successfully fabricated a low-voltage operating and stable OFET and an organic memory device in which the memory window has potential for industrial production.

Improving Environmental and Operational Stability of Polymer Field-Effect Transistors by Doping with Tetranitrofluorenone

Operational instability of organic field-effect transistors (OFETs) is one of the key limitations for applications of printed electronics. Environmental species, especially oxygen and water, unintentionally introduced in the OFET channel, can act as either dopants or traps for charge carriers, affecting the electrical characteristics and stability of devices. Here, we report that intentional doping of the benchmark p-type semiconducting polymer (DPP-DTT) with 2,4,5,7-tetranitrofluorenone (TeNF) markedly improves the operational and environmental stability of OFETs. Electrical interrogation of DPP-DTT OFETs in various environments and at variable temperatures shows suppression of electron-induced traps and increase of hole mobility in oxygen-rich environment, while the water molecules act as traps for positive charge carrier, reducing the hole mobility and significantly shifting the threshold voltage. Doping of DPP-DTT with TeNF suppresses both effects, resulting in environmentally independent performance and superior long-term stability of unencapsulated devices for up to 4 months in ambient air. Furthermore, the doped OFETs exhibit dramatically reduced hysteresis and bias-stressed current drop. Such improvement of the environmental and operational stabilities is ascribed to the mitigation of traps induced by the injected minority carrier (electrons) and the reduction of the majority carrier (hole) traps in doped polymer films due to enhanced microstructural order.

Improving OFF-State Bias-Stress Stability in High-Mobility Conjugated Polymer Transistors with an Antisolvent Treatment

Conjugated polymer field-effect transistors are emerging as an enabling technology for flexible electronics due to their excellent mechanical properties combined with sufficiently high charge-carrier mobilities and compatibility with large-area, low-temperature processing. However, their electrical stability remains a concern. ON-state (accumulation mode) bias-stress instabilities in organic semiconductors have been widely studied, and multiple mitigation strategies have been suggested. In contrast, OFF-state (depletion mode) bias-stress instabilities remain poorly understood despite being crucial for many applications in which the transistors are held in their OFF-state for most of the time. Here, a simple method of using an antisolvent treatment is presented to achieve significant improvements in OFF-state bias-stress and environmental stability as well as general device performance for one of the best performing polymers, solution-processable indacenodithiophene-co-benzothiadiazole (IDT-BT). IDT-BT is weakly crystalline, and the notable improvements to an antisolvent-induced, increased degree of crystallinity, resulting in a lower probability of electron trapping and the removal of charge traps is attributed. The work highlights the importance of the microstructure in weakly crystalline polymer films and offers a simple processing strategy for achieving the reliability required for applications in flexible electronics.

Integration of nanomaterial sensing layers on printable organic field effect transistors for highly sensitive and stable biochemical signal conversion

Organic field effect transistor (OFET) devices are one of the most popular candidates for the development of biochemical sensors due to their merits of being flexible and highly customizable for low-cost large-area manufacturing. This review describes the key points in constructing an extended-gate type OFET (EGOFET) biochemical sensor with high sensitivity and stability. The structure and working mechanism of OFET biochemical sensors are described firstly, emphasizing the importance of critical material and device engineering to higher biochemical sensing capabilities. Next, printable materials used to construct sensing electrodes (SEs) with high sensitivity and stability are presented with a focus on novel nanomaterials. Then, methods of obtaining printable OFET devices with steep subthreshold swing (SS) for high transconductance efficiency are introduced. Finally, approaches for the integration of OFETs and SEs to form portable biochemical sensor chips are introduced, followed by several demonstrations of sensory systems. This review will provide guidelines for optimizing the design and manufacturing of OFET biochemical sensors and accelerating the movement of OFET biochemical sensors from the laboratory to the marketplace.

High throughput processing of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) organic semiconductors

The deposition of organic semiconductors (OSCs) using solution shearing deposition techniques is highly appealing for device implementation. However, when using high deposition speeds, it is necessary to use very concentrated OSC solutions. The OSCs based on the family of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) have been shown to be excellent OSCs due to their high mobility and stability. However, their limited solubility hinders the processing of these materials at high speed. Here, we report the conditions to process alkylated DNTT and the S-shaped π-core derivative S-DNTT by bar-assisted meniscus shearing (BAMS) at high speed (i.e., 10 mm s^-1). In all the cases, homogeneous thin films were successfully prepared, although we found that the gain in solubility achieved with the S-DNTT derivative strongly facilitated solution processing, achieving a field-effect mobility of 2.1 cm² V^-1 s^-1, which is two orders of magnitude higher than the mobility found for the less soluble linear derivatives.

Microstructural Control of Soluble Acene Crystals for Field-Effect Transistor Gas Sensors

Microstructural control during the solution processing of small-molecule semiconductors (namely, soluble acene) is important for enhancing the performance of field-effect transistors (FET) and sensors. This focused review introduces strategies to enhance the gas-sensing properties (sensitivity, recovery, selectivity, and stability) of soluble acene FET sensors by considering their sensing mechanism. Defects, such as grain boundaries and crystal edges, provide diffusion pathways for target gas molecules to reach the semiconductor-dielectric interface, thereby enhancing sensitivity and recovery. Representative studies on grain boundary engineering, patterning, and pore generation in the formation of soluble acene crystals are reviewed. The phase separation and microstructure of soluble acene/polymer blends for enhancing gas-sensing performance are also reviewed. Finally, flexible gas sensors using soluble acenes and soluble acene/polymer blends are introduced, and future research perspectives in this field are suggested.

Microfluidic Screening-Assisted Machine Learning to Investigate Vertical Phase Separation of Small Molecule:Polymer Blend

Solution-based thin-film processing is a widely utilized technique for the fabrication of various devices. In particular, the tunability of the ink composition and coating condition allows precise control of thin-film properties and device performance. Despite the advantage of having such tunability, the sheer number of possible combinations of experimental parameters render it infeasible to efficiently optimize device performance and analyze the correlation between experimental parameters and device performance. In this work, a microfluidic screening-embedded thin-film processing technique is developed, through which thin-films of varying ratios of small molecule semiconductor:polymer blend are simultaneously generated and screened in a time- and resource-efficient manner. Moreover, utilizing the thin-films of varying combinations of experimental parameters, machine learning models are trained to predict the transistor performance. Gaussian Process Regression (GPR) algorithms tuned by Bayesian optimization shows the best predictive accuracy amongst the trained models, which enables narrowing down of the combinations of experimental parameters and investigation of the degree of vertical phase separation under the predicted parameter space. The technique can serve as a guideline for elucidating the underlying complex parameter-property-performance correlations in solution-based thin-film processing, thereby accelerating the optimization of various thin-film devices in the future.

Long-Wavelength Instabilities Impact Alignment during Blade Coating of a Stretchable Organic Transistor Blend

The use of polymer-polymer blends to tailor mechanical properties and improve electrical performance is becoming widespread in the field of printed electronics. Similarly, meniscus-guided coating can be used to tailor electrical properties through alignment of the semiconducting material. We report on a long-wavelength instability during blade coating of a semiconducting polymer/elastomer blend for organic transistor applications that results in significant variation of the semiconducting polymer nanofibril alignment across the instability period. By correlating measurements over diverse (nm to mm) length scales, we can directly relate the charge transport in top-gate transistors to the local polymer nanofibril alignment. Hole mobility is directly correlated to the local alignment and shows an ≈2 × variation across the instability for devices aligned with the coating direction. The potential for long-wavelength instabilities to create device-relevant morphology variations should be considered when optimizing coating conditions. These results reveal considerable potential for error in assuming that smooth films are necessarily structurally uniform; material structure may spatially vary for some coating methods, leading to a correlated, spatially varying device performance.

Self-Aligned Bilayers for Flexible Free-Standing Organic Field-Effect Transistors

Free-standing and flexible field-effect transistors based on 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene)/polystyrene bilayers are obtained by well-controlled phase separation of both components. The phase separation is induced by solvent vapor annealing of initially amorphous blend films, leading to crystallization of TIPS-pentacene as the top layer. The crystallinity and blend morphology strongly depend on the molecular weight of polystyrene, and under optimized conditions, distinct phase separation with a well-defined and trap-free interface between both fractions is achieved. Due to the distinct bilayer morphology, the resulting flexible field-effect transistors reveal similar charge carrier mobilities as rigid devices and additionally pronounced environmental and bias stress stabilities. The performance of the flexible transistors remains stable up to a strain of 1.8%, while above this deformation, a close relation between current and strain is observed that is required for applications in strain sensors.

Quinoidal Small Molecule Containing Ring-Extended Termini for Organic Field-Effect Transistors

In this work, we synthesized and characterized two quinoidal small molecules based on benzothiophene modified and original isatin terminal units, benzothiophene quinoidal thiophene (BzTQuT) and quinoidal thiophene (QuT), respectively, to investigate the effect of introducing a fused ring into the termini of quinoidal molecules. Extending the terminal unit of the quinoidal molecule affected the extension of π-electron delocalization and decreased the bond length alternation, which led to the downshifting of the collective Raman band and dramatically lowering the band gap. Organic field-effect transistor (OFET) devices in neat BzTQuT films showed p-type transport behavior with low hole mobility, which was ascribed to the unsuitable film morphology for charge transport. By blending with an amorphous insulating polymer, polystyrene, and poly(2-vinylnaphthalene), an OFET based on a BzTQuT film annealed at 150 °C exhibited improved mobility up to 0.09 cm2 V-1 s-1. This work successfully demonstrated that the extension of terminal groups into the quinoidal structure should be an effective strategy for constructing narrow band gap and high charge transporting organic semiconductors.

Mixed Ionic and Electronic Conduction in Small-Molecule Semiconductors

Small-molecule organic semiconductors have displayed remarkable electronic properties with a multitude of π-conjugated structures developed and fine-tuned over recent years to afford highly efficient hole- and electron-transporting materials. Already making a significant impact on organic electronic applications including organic field-effect transistors and solar cells, this class of materials is also now naturally being considered for the emerging field of organic bioelectronics. In efforts aimed at identifying and developing (semi)conducting materials for bioelectronic applications, particular attention has been placed on materials displaying mixed ionic and electronic conduction to interface efficiently with the inherently ionic biological world. Such mixed conductors are conveniently evaluated using an organic electrochemical transistor, which further presents itself as an ideal bioelectronic device for transducing biological signals into electrical signals. Here, we review recent literature relevant for the design of small-molecule mixed ionic and electronic conductors. We assess important classes of p- and n-type small-molecule semiconductors, consider structural modifications relevant for mixed conduction and for specific interactions with ionic species, and discuss the outlook of small-molecule semiconductors in the context of organic bioelectronics.

Excess Polymer in Single-Walled Carbon Nanotube Thin-Film Transistors: Its Removal Prior to Fabrication Is Unnecessary

Ultrapure semiconducting single-walled carbon nanotube (sc-SWNT) dispersions produced through conjugated polymer sorting are ideal candidates for the fabrication of solution-processed organic electronic devices on a commercial scale. Protocols for sorting and dispersing ultrapure sc-SWNTs with conjugated polymers for thin-film transistor (TFT) applications have been well refined. Conventional wisdom dictates that removal of excess unbound polymer through filtration or centrifugation is necessary to produce high-performance TFTs. However, this is time-consuming, wasteful, and resource-intensive. In this report, we challenge this paradigm and demonstrate that excess unbound polymer during semiconductor film fabrication is not necessarily detrimental to device performance. Over 1200 TFT devices were fabricated from 30 unique polymer-sorted SWNT dispersions, prepared using two different alternating copolymers. Detailed Raman spectroscopy, x-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM) studies of the random-network semiconductor films demonstrated that a simple solvent rinse during TFT fabrication was sufficient to remove unbound polymer from the sc-SWNT films, thus eliminating laborious polymer removal before TFT fabrication. Furthermore, below a threshold polymer concentration, the presence of excess polymer during fabrication did not significantly impede TFT performance. Preeminent performance was achieved for devices prepared from native polymer-sorted SWNT dispersions containing the "original" amount of excess unbound polymer (immediately following enrichment). Lastly, we developed an open-source Machine Learning algorithm to quantitatively analyze AFM images of SWNT films for surface coverage, number of tubes, and tube alignment.

A Solution Processable Dithioalkyl Dithienothiophene (DSDTT) Based Small Molecule and Its Blends for High Performance Organic Field Effect Transistors

The 3,5-dithiooctyl dithienothiophene based small molecular semiconductor DDTT-DSDTT (1), end functionalized with fused dithienothiophene (DTT) units, was synthesized and characterized for organic field effect transistors (OFET). The thermal, optical, electrochemical, and computed electronic structural properties of 1 were investigated and contrasted. The single crystal structure of 1 reveals the presence of intramolecular locks between S(alkyl)···S(thiophene), with a very short S-S distance of 3.10 Å, and a planar core. When measured in an OFET device compound 1 exhibits a hole mobility of 3.19 cm² V^-1 s^-1, when the semiconductor layer is processed by a solution-shearing deposition method and using environmentally acceptable anisole as the solvent. This is the highest value reported to date for an all-thiophene based molecular semiconductor. In addition, solution-processed small molecule/insulating polymer (1/PαMS) blend films and devices were investigated. Morphological analysis reveals a nanoscopic vertical phase separation with the PαMS layer preferentially contacting the dielectric and 1 located on top of the stack. The OFET based on the blend comprising 50% weight of 1 exhibits a hole mobility of 2.44 cm² V^-1 s^-1 and a very smaller threshold voltage shift under gate bias stress.

The Critical Role of Materials' Interaction in Realizing Organic Field-Effect Transistors Via High-Dilution Blending with Insulating Polymers

High-performance low-band-gap polymer semiconductors are visibly colored, making them unsuitable for transparent and imperceptible electronics without reducing film thickness to the nanoscale range. Herein, we demonstrate polymer/insulator blends exhibiting favorable miscibility that improves the transparency and carrier transport in an organic field-effect transistor (OFET) device. The mesoscale structures leading to more efficient charge transport in ultrathin films relevant to the realization of transparent and flexible electronic applications are explored based on thermodynamic material interaction principles in conjunction with optical and morphological studies. By blending the commodity polymer polystyrene (PS) with two high-performing polymers, PDPP3T and P (NDI2OD-T2) (known as N2200), a drastic difference in morphology and fiber network are observed due to considerable differences in the degree of thermodynamic interaction between the conjugated polymers and PS. Intrinsic material interaction behavior establishes a long-range intermolecular interaction in the PDPP3T polymer fibrillar network dispersed in the majority (80%) PS matrix resulting in a ca. 3-fold increased transistor hole mobility of 1.15 cm² V^-1 s^-1 (highest = 1.5 cm² V^-1 s^-1) as compared to the pristine material, while PS barely affects the electron mobility in N2200. These basic findings provide important guidelines to achieve high mobility in transparent OFETs.

Wettability Control of Interfaces for High-Performance Organic Thin-Film Transistors by Soluble Insulating Polymer Films

Organic small-molecule semiconductors have higher carrier mobility compared to polymer semiconductors, while the actual performances of these materials are susceptible to morphological defects and misalignment of crystalline grains. Here, a new strategy is explored to control the crystallization and morphologies of a solution-processed organic small-molecule semiconductor 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) using soluble polymer films to control the wettability of substrates. Different from the traditional surface modification method, the polymer layer as a modification layer is soluble in the semiconductor solution during the fabrication of organic thin-film transistors (OTFTs). The dissolved polymer alters the state of the semiconductor solution, which in turn, changes the crystallographic morphologies of the semiconductor films. By controlling the solubility and thickness of the polymer modification layers, it is possible to regulate the grain boundary and domain size of C8-BTBT films, which determine the performances of OTFTs. The bottom-gate transistors modified by a thick PS layer exhibit a mobility of >7 cm²/V·s and an on/off ratio of >10⁷. It is expected that this new modification method will be applicable to high-performance OTFTs based on other small molecular semiconductors and dielectrics.

Modulating the luminance of organic light-emitting diodes via optical stimulation of a photochromic molecular monolayer at transparent oxide electrode

Self-assembled monolayers (SAMs) deposited on bottom electrodes are commonly used to tune charge carrier injection or blocking in optoelectronic devices. Beside the enhancement of device performance, the fabrication of multifunctional devices in which the output can be modulated by multiple external stimuli remains a challenging target. In this work, we report the functionalization of an indium tin oxide (ITO) electrode with a SAM of a diarylethene derivative designed for optically control the electronic properties. Following the demonstration of dense SAM formation and its photochromic activity, as a proof-of-principle, an organic light-emitting diode (OLED) embedding the light-responsive SAM-covered electrode was fabricated and characterized. Optically addressing the two-terminal device by irradiation with ultraviolet light doubles the electroluminescence. The original value can be restored reversibly by irradiation with visible light. This expanded functionality is based on the photoinduced modulation of the electronic structure of the diarylethene isomers, which impact the charge carriers' confinement within the emissive layer. This approach could be successfully exploited in the field of opto-communication technology, for example to fabricate opto-electronic logic circuits.

Solution-Processed Centimeter-Scale Highly Aligned Organic Crystalline Arrays for High-Performance Organic Field-Effect Transistors

Solution-printed organic single-crystalline films hold great potential for achieving low-cost manufacturing of large-area and flexible electronics. For practical applications, organic field-effect transistor arrays must exhibit high performance and small device-to-device variation. However, scalable fabrication of highly aligned organic crystalline arrays is rather difficult due to the lack of control over the crystallographic orientation, crystal uniformity, and thickness. Here, a facile solution-printing method to fabricate centimeter-sized highly aligned organic crystalline arrays with a thickness of a few molecular layers is reported. In this study, the solution shearing technique is used to produce large-area, organic highly crystalline thin films. Water-soluble ink is printed on the hydrophobic surface of organic crystalline films, to selectively protect it, followed by etching. It is shown that the addition of a surfactant dramatically changes the fluid drying dynamics and increases the contact line friction of the aqueous solution to the underlying nonwetting organic crystalline film. As a result, centimeter-scale highly aligned organic crystalline arrays are successfully prepared on different substrates. The devices based on organic crystalline arrays show good performance and uniformity. This study demonstrates that solution printing is close to industrial application and also expands its applicability to various printed flexible electronics.

Interface Engineering in Organic Field-Effect Transistors: Principles, Applications, and Perspectives

Heterogeneous interfaces that are ubiquitous in optoelectronic devices play a key role in the device performance and have led to the prosperity of today's microelectronics. Interface engineering provides an effective and promising approach to enhancing the device performance of organic field-effect transistors (OFETs) and even developing new functions. In fact, researchers from different disciplines have devoted considerable attention to this concept, which has started to evolve from simple improvement of the device performance to sophisticated construction of novel functionalities, indicating great potential for further applications in broad areas ranging from integrated circuits and energy conversion to catalysis and chemical/biological sensors. In this review article, we provide a timely and comprehensive overview of current efficient approaches developed for building various delicate functional interfaces in OFETs, including interfaces within the semiconductor layers, semiconductor/electrode interfaces, semiconductor/dielectric interfaces, and semiconductor/environment interfaces. We also highlight the major contributions and new concepts of integrating molecular functionalities into electrical circuits, which have been neglected in most previous reviews. This review will provide a fundamental understanding of the interplay between the molecular structure, assembly, and emergent functions at the molecular level and consequently offer novel insights into designing a new generation of multifunctional integrated circuits and sensors toward practical applications.

Computationally aided design of a high-performance organic semiconductor: the development of a universal crystal engineering core

Herein, we describe the design and synthesis of a suite of molecules based on a benzodithiophene "universal crystal engineering core". After computationally screening derivatives, a trialkylsilylethyne-based crystal engineering strategy was employed to tailor the crystal packing for use as the active material in an organic field-effect transistor. Electronic structure calculations were undertaken to reveal derivatives that exhibit exceptional potential for high-efficiency hole transport. The promising theoretical properties are reflected in the preliminary device results, with the computationally optimized material showing simple solution processing, enhanced stability, and a maximum hole mobility of 1.6 cm2 V-1 s-1.

High-Performance Low-Voltage Flexible Photodetector Arrays Based on All-Solid-State Organic Electrochemical Transistors for Photosensing and Imaging

The identifying characteristic of an organic electrochemical transistor (OECT) is the coupling between ionic and electronic charges within the entire volume of the channel. In this work, by taking advantage of the volumetric nature of the OECTs' response, a novel flexible photodetector is reported for the first time based on all-solid-state OECT with an excellent responsivity of up to 6.7 × 10⁶ A/W, detectivity as high as 3.6 × 10¹³ Jones, and a fast response of ∼0.13 s in the visible range, which are superior to those of the majority of the reported organic phototransistors (OPTs) based on field-effect transistors (FETs) and even better than those of FET-based phototransistors with two-dimensional (MoS₂ and graphene) and perovskite materials. The high performance of the devices was ascribed to the combination of the higher carrier mobility of poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) as a channel and the volumetric nature of the OECTs' response, and the charge density of the volumetric channel was efficiently modulated by incident light compared to FETs. Moreover, OECT-based OPTs with quantum dots (CdSe/ZnS) as a light sensitizer were characterized under ultraviolet light, and they exhibited excellent photosensitivity, which further verified the superiority of OECT for phototransistors. Furthermore, a flexible image sensor was fabricated for the first time by integrating flexible OECTs-OPTs into a 10 × 10 array, which can clearly identify the target image under a bending state, indicating the great potential of OECTs-OPTs in the application of low-power, ultrasensitive flexible photodetectors and imaging technology.

Effect of Crystallization Modes in TIPS-pentacene/Insulating Polymer Blends on the Gas Sensing Properties of Organic Field-Effect Transistors

Blending organic semiconductors with insulating polymers has been known to be an effective way to overcome the disadvantages of single-component organic semiconductors for high-performance organic field-effect transistors (OFETs). We show that when a solution processable organic semiconductor (6,13-bis(triisopropylsilylethynyl)pentacene, TIPS-pentacene) is blended with an insulating polymer (PS), morphological and structural characteristics of the blend films could be significantly influenced by the processing conditions like the spin coating time. Although vertical phase-separated structures (TIPS-pentacene-top/PS-bottom) were formed on the substrate regardless of the spin coating time, the spin time governed the growth mode of the TIPS-pentacene molecules that phase-separated and crystallized on the insulating polymer. Excess residual solvent in samples spun for a short duration induces a convective flow in the drying droplet, thereby leading to one-dimensional (1D) growth mode of TIPS-pentacene crystals. In contrast, after an appropriate spin-coating time, an optimum amount of the residual solvent in the film led to two-dimensional (2D) growth mode of TIPS-pentacene crystals. The 2D spherulites of TIPS-pentacene are extremely advantageous for improving the field-effect mobility of FETs compared to needle-like 1D structures, because of the high surface coverage of crystals with a unique continuous film structure. In addition, the porous structure observed in the 2D crystalline film allows gas molecules to easily penetrate into the channel region, thereby improving the gas sensing properties.

Field-Effect Charge Transport in Doped Polymer Semiconductor-Insulator Alternating Bulk Junctions with Ultrathin Transport Layers

Conjugated-polymer field-effect transistors are attractive for flexible electronics. However, relatively high chemical doping (oxidation) concentration of p-type polymer semiconductors is usually not compatible with good transistor performance, due to poor switching-off capability and short-channel performance. Here, we propose a combined simulation and experimental investigation on charge transport in a semiconductor-insulator alternating bulk junction composed of repeating semiconductor and insulator regions, which shows better transistor performance at higher doping levels, as compared with traditional planar transistors. Moreover, the doped semiconductor transport layers in the junction should be less than 2 nm thick to ensure sufficient pinch-off capability. Using some semiconductors including poly(3-hexylthiophene), we utilize a fast solvent evaporation approach to obtain semiconductor-insulator alternating bulk junctions with ultrathin (thickness < 2 nm) semiconductor crystallites and with vertical gradients of both morphology and electronic properties. Doping with a concentration of up to 10¹⁹ cm^-3 simultaneously induces the improvement of field-effect mobility, on/off ratio, and subthreshold swing, which leads to long-term (>1 year) stability, without lowering the short-channel performance. Moreover, these heterojunctions are optically transparent, nearly colorless, and flexible, thus could be exploited for wide electronic and photonic applications.

Dual-gate organic phototransistor with high-gain and linear photoresponse

The conversion of light into electrical signal in a photodetector is a crucial process for a wide range of technological applications. Here we report a new device concept of dual-gate phototransistor that combines the operation of photodiodes and phototransistors to simultaneously enable high-gain and linear photoresponse without requiring external circuitry. In an oppositely biased, dual-gate transistor based on a solution-processed organic heterojunction layer, we find that the presence of both n- and p-type channels enables both photogenerated electrons and holes to efficiently separate and transport in the same semiconducting layer. This operation enables effective control of trap carrier density that leads to linear photoresponse with high photoconductive gain and a significant reduction of electrical noise. As we demonstrate using a large-area, 8 × 8 imaging array of dual-gate phototransistors, this device concept is promising for high-performance and scalable photodetectors with tunable dynamic range.

Recent Progress in High-Mobility Organic Transistors: A Reality Check

Over the past three decades, significant research efforts have focused on improving the charge carrier mobility of organic thin-film transistors (OTFTs). In recent years, a commonly observed nonlinearity in OTFT current-voltage characteristics, known as the "kink" or "double slope," has led to widespread mobility overestimations, contaminating the relevant literature. Here, published data from the past 30 years is reviewed to uncover the extent of the field-effect mobility hype and identify the progress that has actually been achieved in the field of OTFTs. Present carrier-mobility-related challenges are identified, finding that reliable hole and electron mobility values of 20 and 10 cm2 V-1 s-1 , respectively, have yet to be achieved. Based on the analysis, the literature is then reviewed to summarize the concepts behind the success of high-performance p-type polymers, along with the latest understanding of the design criteria that will enable further mobility enhancement in n-type polymers and small molecules, and the reasons why high carrier mobility values have been consistently produced from small molecule/polymer blend semiconductors. Overall, this review brings together important information that aids reliable OTFT data analysis, while providing guidelines for the development of next-generation organic semiconductors.

Solvent Additives: Key Morphology-Directing Agents for Solution-Processed Organic Solar Cells

Organic photovoltaics (OPV) have the advantage of possible fabrication by energy-efficient and cost-effective deposition methods, such as solution processing. Solvent additives can provide fine control of the active layer morphology of OPVs by influencing film formation during solution processing. As such, solvent additives form a versatile method of experimental control for improving organic solar cell device performance. This review provides a brief history of solution-processed bulk heterojunction OPVs and the advent of solvent additives, putting them into context with other methods available for morphology control. It presents the current understanding of how solvent additives impact various mechanisms of phase separation, enabled by recent advances in in situ morphology characterization. Indeed, understanding solvent additives' effects on film formation has allowed them to be applied and combined effectively and synergistically to boost OPV performance. Their success as a morphology control strategy has also prompted the use of solvent additives in related organic semiconductor technologies. Finally, the role of solvent additives in the development of next-generation OPV active layers is discussed. Despite concerns over their environmental toxicity and role in device instability, solvent additives remain relevant morphological directing agents as research interests evolve toward nonfullerene acceptors, ternary blends, and environmentally sustainable solvents.

Role of Polymorphism and Thin-Film Morphology in Organic Semiconductors Processed by Solution Shearing

Organic semiconductors (OSCs) are promising materials for cost-effective production of electronic devices because they can be processed from solution employing high-throughput techniques. However, small-molecule OSCs are prone to structural modifications because of the presence of weak van der Waals intermolecular interactions. Hence, controlling the crystallization in these materials is pivotal to achieve high device reproducibility. In this perspective article, we focus on controlling polymorphism and morphology in small-molecule organic semiconducting thin films deposited by solution-shearing techniques compatible with roll-to-roll systems. Special attention is paid to the influence that the different experimental deposition parameters can have on thin films. Further, the main characterization techniques for thin-film structures are reviewed, highlighting the in situ characterization tools that can provide crucial insights into the crystallization mechanisms.

Remarkable Enhancement of the Hole Mobility in Several Organic Small-Molecules, Polymers, and Small-Molecule:Polymer Blend Transistors by Simple Admixing of the Lewis Acid p-Dopant B(C6F5)3

Improving the charge carrier mobility of solution-processable organic semiconductors is critical for the development of advanced organic thin-film transistors and their application in the emerging sector of printed electronics. Here, a simple method is reported for enhancing the hole mobility in a wide range of organic semiconductors, including small-molecules, polymers, and small-molecule:polymer blends, with the latter systems exhibiting the highest mobility. The method is simple and relies on admixing of the molecular Lewis acid B(C6F5)3 in the semiconductor formulation prior to solution deposition. Two prototypical semiconductors where B(C6F5)3 is shown to have a remarkable impact are the blends of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene:poly(triarylamine) (diF-TESADT:PTAA) and 2,7-dioctyl[1]-benzothieno[3,2-b][1]benzothiophene:poly(indacenodithiophene-co-benzothiadiazole) (C8-BTBT:C16-IDTBT), for which hole mobilities of 8 and 11 cm2 V-1 s-1, respectively, are obtained. Doping of the 6,13-bis(triisopropylsilylethynyl)pentacene:PTAA blend with B(C6F5)3 is also shown to increase the maximum hole mobility to 3.7 cm2 V-1 s-1. Analysis of the single and multicomponent materials reveals that B(C6F5)3 plays a dual role, first acting as an efficient p-dopant, and secondly as a microstructure modifier. Semiconductors that undergo simultaneous p-doping and dopant-induced long-range crystallization are found to consistently outperform transistors based on the pristine materials. Our work underscores Lewis acid doping as a generic strategy towards high performance printed organic microelectronics.

Organic Thin Film Transistors Incorporating Solution Processable Thieno[3,2-b]thiophene Thienoacenes

Bottom-gate bottom-contact organic thin film transistors (OTFTs) were prepared with four novel star-shaped conjugated molecules containing a fused thieno[3,2-b]thiophene moiety incorporated either in the core and/or at the periphery of the molecular framework. The molecules were soluble in CS₂, allowing for solution-processing techniques to be employed. OTFTs with different channel geometries were characterized in both air and vacuum in order to compare environmental effects on performance. Blending the small molecules with poly(styrene), an insulating polymer, facilitated the formation of an even semiconducting film, resulting in an order of magnitude increase in device mobility. The highest field-effect mobilities were in air and on the order of 10^-3 cm²/Vs for three of the four molecules, with a maximum mobility of 9.2 × 10^-3 cm²/Vs achieved for the most conjugated small molecule. This study explores the relationship between processing conditions and OTFT devices performance for four different molecules within this new family of materials, resulting in a deeper insight into their potential as solution-processable semiconductors.

One-step assembly of multi-layered structures with orthogonally oriented stripe-like patterns on the surface of a capillary tube

We developed a robust method to construct large-scale multi-layered assemblies with orthogonally oriented stripes on a capillary tube using a confined evaporative self-assembly (CESA) method. A mixture of conductive polymer poly(3-hexylthiophene) (P3HT) and biocompatible polylactic acid (PLA) was chosen as the model polymer and the molecular chain orientation of P3HT in an individual stripe could be assessed by laser confocal polarization Raman spectroscopy. These structures could provide contact cues to guide the growth of smooth muscle cells for potential tissue engineering applications.

Benzothiadiazole-Based Small-Molecule Semiconductors for Organic Thin-Film Transistors and Complementary-like Inverters

New benzothiadiazole derivatives, 4,7-bis(5-phenylthiophen-2-yl)benzo[c][1,2,5]thiadiazole (PT-BTD) and 4,7-bis[4-(thiophen-2-yl)phenyl]benzo[c][1,2,5]thiadiazole (TP-BTD), were synthesized and characterized as small-molecule organic semiconductors for organic thin-film transistors (OTFTs) and complementary inverters. The thermal, optical, and electrochemical properties of the new compounds were fully characterized. Vacuum-deposition and solution-shearing methods were used to fabricate thin films based on these compounds. Thin films based on PT-BTD exhibited p-channel characteristics with hole mobilities as high as 0.10 cm²  V^-1  s^-1 and current on/off ratios >10⁷ for top-contact/bottom-gate OTFT devices. With an optimized blending ratio of PT-BTD and the representative n-channel semiconductor N,N'-1H,1H-perfluorobutyl dicyanoperylenediimide, bulk heterojunction ambipolar transistors were fabricated with balanced hole and electron mobilities of 0.10 and 0.07 cm²  V^-1  s^-1 , respectively. Furthermore, a complementary-like inverter was fabricated using ambipolar thin-film transistors, which showed a high voltage gain of 84.

Electrical Characteristics of Pentacene Films on Cross-Linked Polymeric Insulators of Varying Thicknesses

Pentacene films vacuum-sublimed on a cross-linked polymeric insulator (CPVP-C₆) prepared using poly(4-vinylphenol) (PVP) and 1,6-bis(trichlorosilyl)hexane (C₆) were studied with a special concern on possible influences of the CPVP-C₆ thickness on the electrical characteristics of the pentacene films. It was found that the conductivities of the pentacene films on a thin CPVP-C₆ film (10 nm) were approximately 2 orders of magnitude higher than those on a glass substrate and increased slightly with the increase in the thickness of the underlying CPVP-C₆ film. In addition, the X-ray diffraction measurements showed that the stacking structure of pentacene molecules was remarkably enhanced by increasing the thickness of the CPVP-C₆ film, suggesting that the increase in conductivity is due, at least in part, to the improvement in carrier mobilities caused by the growth of large pentacene grains. An attempt to directly evaluate carrier mobilities using pentacene/CPVP-C₆ field-effect transistors was made, and a seeming increase in the carrier mobilities observed with the increase in the CPVP-C₆ thickness was ascribed to a hygroscopic nature of the CPVP-C₆ film, which was evidenced by the capacitance and quartz crystal microbalance measurements. Possible reasons are discussed to explain the enhanced conductivities of the pentacene films on the increased thicknesses of CPVP-C₆.

Small Molecule/Polymer Blend Organic Transistors with Hole Mobility Exceeding 13 cm(2) V(-1) s(-1)

A ternary organic semiconducting blend composed of a small-molecule, a conjugated polymer, and a molecular p-dopant is developed and used in solution-processed organic transistors with hole mobility exceeding 13 cm(2) V(-1) s(-1) (see the Figure). It is shown that key to this development is the incorporation of the p-dopant and the formation of a vertically phase-separated film microstructure.

Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends

Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed.

Significantly Increasing the Ductility of High Performance Polymer Semiconductors through Polymer Blending

Polymer semiconductors based on donor-acceptor monomers have recently resulted in significant gains in field effect mobility in organic thin film transistors (OTFTs). These polymers incorporate fused aromatic rings and have been designed to have stiff planar backbones, resulting in strong intermolecular interactions, which subsequently result in stiff and brittle films. The complex synthesis typically required for these materials may also result in increased production costs. Thus, the development of methods to improve mechanical plasticity while lowering material consumption during fabrication will significantly improve opportunities for adoption in flexible and stretchable electronics. To achieve these goals, we consider blending a brittle donor-acceptor polymer, poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo[3,4-c]pyridine] (PCDTPT), with ductile poly(3-hexylthiophene). We found that the ductility of the blend films is significantly improved compared to that of neat PCDTPT films, and when the blend film is employed in an OTFT, the performance is largely maintained. The ability to maintain charge transport character is due to vertical segregation within the blend, while the improved ductility is due to intermixing of the polymers throughout the film thickness. Importantly, the application of large strains to the ductile films is shown to orient both polymers, which further increases charge carrier mobility. These results highlight a processing approach to achieve high performance polymer OTFTs that are electrically and mechanically optimized.

Effect of Polymer Binders on UV-Responsive Organic Thin-Film Phototransistors with Benzothienobenzothiophene Semiconductor

The influence of polymer binders on the UV response of organic thin-film phototransistors (OTF-PTs) is reported. The active channel of the OTF-PTs was fabricated by blending a UV responsive 2,7-dipenty-[1]benzothieno[2,3-b][1]benzothiophene (C5-BTBT) as small molecule semiconductor and a branched unsaturated polyester (B-upe) as dielectric binder (ratio 1:1). To understand the influence of the polymer composition on the photoelectrical properties and UV response of C5-BTBT, control blends were prepared using common dielectric polymers, namely, poly(vinyl acetate) (PVAc), polycarbonate (PC), and polystyrene (PS), for comparison. Thin-film morphology and nanostructure of the C5-BTBT/polymer blends were investigated by means of optical and atomic force microscopy, and powder X-ray diffraction, respectively. Electrical and photoelectrical characteristics of the studied OTF-PTs were evaluated in the dark and under UV illumination with a constant light intensity (P = 3 mW cm(-2), λ = 365 nm), respectively, using two- and three-terminal I-V measurements. Results revealed that the purposely chosen B-upe polymer binder strongly affected the UV response of OTF-PTs. A photocurrent increase of more than 5 orders of magnitude in the subthreshold region was observed with a responsivity as high as 9.7 AW(-1), at VG = 0 V. The photocurrent increase and dramatic shift of VTh,average (∼86 V) were justified by the high number of photogenerated charge carriers upon the high trap density in bulk 8.0 × 10(12) cm(-2) eV(-1) generated by highly dispersed C5-BTBT in B-upe binder. Compared with other devices, the B-upe OTF-PTs had the fastest UV response times (τr1/τr2 = 0.5/6.0) reaching the highest saturated photocurrent (>10(6)), at VG = -5 V and VSD = -60 V. The enhanced UV sensing properties of B-upe based OTF-PTs were attributed to a self-induced thin-film morphology. The enlarged interface facilitated the electron withdrawing/donating functional groups in the polymer chains in influencing the photocharge separation, trapping and recombination.

Highly sensitive broadband flexible photodetectors based on a blend film with zinc octaethylporphyrin long nanowires embedded in an insulating polymer

Blend films with long nanowires of zinc octaethylporphyrin (ZnOEP) embedded in an insulating polymer of poly(methyl methacrylate) (PMMA) have been successfully fabricated by a one-step spin-coating process. Concerning photoactive blends based on small-molecule semiconductors, this is quite a novel strategy and allows us to greatly reduce the issues related to low device performance, such as phase-separation, poor connectivity of the semiconducting layer, and higher densities of interfacial defects. Intensive studies on the correlation between the film morphology and device performance have revealed that excellent photodetector performance is derived from efficient charge transport and good connectivity observed in highly crystalline, interconnected ZnOEP nanowires embedded in an insulating PMMA matrix. To the best of our knowledge, this is the first demonstration of a blend-film-based organic photodetector, which exhibits high sensitivity, high stability, high I(on)/I(off) ratio, excellent mechanical flexibility, and a broadband responsivity region extending up to 1050 nm. The unique characteristics of facile fabrication, high sensitivity, excellent mechanical stability, and broadband responsivity can make the blend film of ZnOEP and PMMA promising in large-area flexible photodetectors.

Semiconducting polymer–dipeptide nanostructures by ultrasonically-assisted self-assembling

The preparation of bio-organic nanostructures containing dipeptides and conjugated polymers like P3HT–diphenylalanine is trigged by ultrasound energy owing the study of such hybrid materials in solution processed OFETs and beyond.

Solution-printed organic semiconductor blends exhibiting transport properties on par with single crystals

Solution-printed organic semiconductors have emerged in recent years as promising contenders for roll-to-roll manufacturing of electronic and optoelectronic circuits. The stringent performance requirements for organic thin-film transistors (OTFTs) in terms of carrier mobility, switching speed, turn-on voltage and uniformity over large areas require performance currently achieved by organic single-crystal devices, but these suffer from scale-up challenges. Here we present a new method based on blade coating of a blend of conjugated small molecules and amorphous insulating polymers to produce OTFTs with consistently excellent performance characteristics (carrier mobility as high as 6.7 cm(2) V(-1) s(-1), low threshold voltages of<1 V and low subthreshold swings <0.5 V dec(-1)). Our findings demonstrate that careful control over phase separation and crystallization can yield solution-printed polycrystalline organic semiconductor films with transport properties and other figures of merit on par with their single-crystal counterparts.