1
|
Orellana J, Araya-Hermosilla E, Pucci A, Araya-Hermosilla R. Polymer-Assisted Graphite Exfoliation: Advancing Nanostructure Preparation and Multifunctional Composites. Polymers (Basel) 2024; 16:2273. [PMID: 39204493 PMCID: PMC11359776 DOI: 10.3390/polym16162273] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/01/2024] [Revised: 08/02/2024] [Accepted: 08/08/2024] [Indexed: 09/04/2024] Open
Abstract
Exfoliated graphite (ExG) embedded in a polymeric matrix represents an accessible, cost-effective, and sustainable method for generating nanosized graphite-based polymer composites with multifunctional properties. This review article analyzes diverse methods currently used to exfoliate graphite into graphite nanoplatelets, few-layer graphene, and polymer-assisted graphene. It also explores engineered methods for small-scale pilot production of polymer nanocomposites. It highlights the chemistry involved during the graphite intercalation and exfoliation process, particularly emphasizing the interfacial interactions related to steric repulsion forces, van der Waals forces, hydrogen bonds, π-π stacking, and covalent bonds. These interactions promote the dispersion and stabilization of the graphite derivative structures in polymeric matrices. Finally, it compares the enhanced properties of nanocomposites, such as increased thermal and electrical conductivity and electromagnetic interference (EMI) shielding applications, with those of neat polymer materials.
Collapse
Affiliation(s)
- Jaime Orellana
- Programa de Doctorado en Ciencias de Materiales e Ingeniería de Procesos, Universidad Tecnológica Metropolitana, Ignacio Valdivieso 2409, San Joaquín, Santiago 8940577, Chile
| | - Esteban Araya-Hermosilla
- Departamento de Ingeniería Química, Biotecnología y Materiales, Facultad de Ciencias Físicas y Matemáticas, Universidad de Chile, Beauchef 851, Box, Santiago 8370456, Chile
| | - Andrea Pucci
- Dipartimento di Chimica e Chimica Industriale, Università di Pisa, Via Moruzzi 13, 56124 Pisa, Italy
| | - Rodrigo Araya-Hermosilla
- Instituto Universitario de Investigación y Desarrollo Tecnológico (IDT), Universidad Tecnológica Metropolitana, Ignacio Valdivieso 2409, San Joaquín, Santiago 8370456, Chile
| |
Collapse
|
2
|
Lopez Paz I, Godignon P, Moffat N, Pellegrini G, Rafí JM, Rius G. Position-resolved charge collection of silicon carbide detectors with an epitaxially-grown graphene layer. Sci Rep 2024; 14:10376. [PMID: 38710721 DOI: 10.1038/s41598-024-60535-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Accepted: 04/23/2024] [Indexed: 05/08/2024] Open
Abstract
Silicon carbide (SiC) has outstanding physical properties therefore, diodes based on SiC are being considered for many radiation detection applications such as particle accelerator experiments and medical dosimetry. Moreover, by reducing the metal on the surface of the diode there is the potential to enhance its performance in some fields where the presence of metal is detrimental. To this end, SiC detectors with an epitaxially-grown graphene layer (EG), that substitutes the metallic contact, in the sensitive region were produced at IMB-CNM, profiting from the conductivity of the mono-atomic layer material. To isolate the effect of the graphene on the charge collection, samples without graphene were produced in parallel. In this paper, the effect of EG on Silicon Carbide p-in-n radiation detectors is studied in terms of charge collection with a radioactive source and by means of the transient current technique (TCT), which allows for position-dependent signal formation analysis. As a result of the former, we show the capability of the EG-SiC sensor for charge collection after signal integration, to a resolution close to that of a sensor fully metallised. Moreover, from the TCT studies, we observe uniform charge collection across the active region, as well as an up-to ∼ 40% transient amplitude damping which, compared with the ∼ 90% on the sample containing no metallic contact, proves that the presence of graphene benefits the performance of the device and that the technology is viable for radiation detection as an alternative to metal.
Collapse
Affiliation(s)
- Ivan Lopez Paz
- Instituto de Microelectronica de Barcelona, IMB-CNM-CSIC, 08193, Cerdanyola del Valles, Barcelona, Spain.
| | - Philippe Godignon
- Instituto de Microelectronica de Barcelona, IMB-CNM-CSIC, 08193, Cerdanyola del Valles, Barcelona, Spain
| | - Neil Moffat
- Instituto de Microelectronica de Barcelona, IMB-CNM-CSIC, 08193, Cerdanyola del Valles, Barcelona, Spain
| | - Giulio Pellegrini
- Instituto de Microelectronica de Barcelona, IMB-CNM-CSIC, 08193, Cerdanyola del Valles, Barcelona, Spain
| | - Joan Marc Rafí
- Instituto de Microelectronica de Barcelona, IMB-CNM-CSIC, 08193, Cerdanyola del Valles, Barcelona, Spain
| | - Gemma Rius
- Instituto de Microelectronica de Barcelona, IMB-CNM-CSIC, 08193, Cerdanyola del Valles, Barcelona, Spain
| |
Collapse
|
3
|
Lopez Paz I, Fleta C, Gomez F, González DM, Pellegrini G. First use of silicon carbide detectors with graphene-enhanced contacts for medical dosimetry. Sci Rep 2024; 14:6131. [PMID: 38480838 PMCID: PMC10937979 DOI: 10.1038/s41598-024-56544-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Accepted: 03/07/2024] [Indexed: 03/17/2024] Open
Abstract
Silicon Carbide (SiC) is a radiation hard wide bandgap semiconductor, which makes it an interesting alternative for radiation detector fabrication, with potential applications such as High Energy Physics, synchrotron and radiotherapy instrumentation. In addition, by reducing the amount of metal over the active area of said detectors (typically used for electrical connectivity with the implant of the pn-junction) unwanted effects from secondary interactions which can affect the accuracy of the measurement can be diminished, essential to meet the medical standards of precision. In this article, the use of epitaxially-grown graphene is explored as an alternative to metallic contacts with these prototypes. To this end, the first prototypes of SiC diodes with epitaxial graphene contacts were produced at IMB-CNM for radiation detection,along with reference devices. In order to characterise the feasibility of the technology in the medical application, the dose rate linearity of the SiC device with graphene was measured in a radiotherapy Linac in the dose rate range of 1-6 Gy/min. The response of the device was compared to that observed on devices with similar geometries reported elsewhere. To fully characterise the devices, the same exercise was repeated in a laboratory X-ray tube. Under the later set-up, the prototype is compared against a device with a fully metallised active region.
Collapse
Affiliation(s)
- Ivan Lopez Paz
- Instituto de Microelectronica de Barcelona, IMB-CNM-CSIC, Cerdanyola del Valles, 08193, Barcelona, Spain.
| | - Celeste Fleta
- Instituto de Microelectronica de Barcelona, IMB-CNM-CSIC, Cerdanyola del Valles, 08193, Barcelona, Spain
| | - Faustino Gomez
- Departamento de Física de Partículas, Universidade de Santiago de Compostela, 15782, Santiago de Compostela, Spain
| | - Diego Miguel González
- Departamento de Física de Partículas, Universidade de Santiago de Compostela, 15782, Santiago de Compostela, Spain
| | - Giulio Pellegrini
- Instituto de Microelectronica de Barcelona, IMB-CNM-CSIC, Cerdanyola del Valles, 08193, Barcelona, Spain
| |
Collapse
|
4
|
Roma M, Hegde S. Implications of graphene-based materials in dentistry: present and future. Front Chem 2024; 11:1308948. [PMID: 38495056 PMCID: PMC10941955 DOI: 10.3389/fchem.2023.1308948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/07/2023] [Accepted: 12/26/2023] [Indexed: 03/19/2024] Open
Abstract
Since the advent of nanoscience, nanobiomaterials have been applied in the dental industry. Graphene and its derivatives have attracted the most interest of all of them due to their exceptional look, biocompatibility, multiplication differential, and antibacterial capabilities. We outlined the most recent developments about their applications to dentistry in our review. There is discussion of the synthesis processes, architectures, and characteristics of materials based on graphene. The implications of graphene and its counterparts are then meticulously gathered and described. Finally, in an effort to inspire more excellent research, this paper explores the obstacles and potential of graphene-based nanomaterials for dental aspects.
Collapse
Affiliation(s)
- M. Roma
- Manipal College of Dental Sciences, Mangalore, Mangalore, Karnataka, India
- Manipal Academy of Higher Education, Manipal, Karnataka, India
| | - Shreya Hegde
- Manipal College of Dental Sciences, Mangalore, Mangalore, Karnataka, India
- Manipal Academy of Higher Education, Manipal, Karnataka, India
| |
Collapse
|
5
|
Chang CS, Kim KS, Park BI, Choi J, Kim H, Jeong J, Barone M, Parker N, Lee S, Zhang X, Lu K, Suh JM, Kim J, Lee D, Han NM, Moon M, Lee YS, Kim DH, Schlom DG, Hong YJ, Kim J. Remote epitaxial interaction through graphene. SCIENCE ADVANCES 2023; 9:eadj5379. [PMID: 37862426 DOI: 10.1126/sciadv.adj5379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2023] [Accepted: 09/19/2023] [Indexed: 10/22/2023]
Abstract
The concept of remote epitaxy involves a two-dimensional van der Waals layer covering the substrate surface, which still enable adatoms to follow the atomic motif of the underlying substrate. The mode of growth must be carefully defined as defects, e.g., pinholes, in two-dimensional materials can allow direct epitaxy from the substrate, which, in combination with lateral epitaxial overgrowth, could also form an epilayer. Here, we show several unique cases that can only be observed for remote epitaxy, distinguishable from other two-dimensional material-based epitaxy mechanisms. We first grow BaTiO3 on patterned graphene to establish a condition for minimizing epitaxial lateral overgrowth. By observing entire nanometer-scale nuclei grown aligned to the substrate on pinhole-free graphene confirmed by high-resolution scanning transmission electron microscopy, we visually confirm that remote epitaxy is operative at the atomic scale. Macroscopically, we also show variations in the density of GaN microcrystal arrays that depend on the ionicity of substrates and the number of graphene layers.
Collapse
Affiliation(s)
- Celesta S Chang
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ki Seok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Bo-In Park
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Joonghoon Choi
- GRI-TPC International Research Center and Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Hyunseok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Junseok Jeong
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Matthew Barone
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
| | - Nicholas Parker
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Kuangye Lu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Jekyung Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Doyoon Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ne Myo Han
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Mingi Moon
- Department of Mechanical Engineering, Seoul National University, Seoul, Republic of Korea
| | - Yun Seog Lee
- Department of Mechanical Engineering, Seoul National University, Seoul, Republic of Korea
| | - Dong-Hwan Kim
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
- Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany
| | - Young Joon Hong
- GRI-TPC International Research Center and Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Microelectronic Technology Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| |
Collapse
|
6
|
Duan Y, Xu W, Kong W, Wang J, Zhang J, Yang Z, Cai Q. Modification on Flower Defects and Electronic Properties of Epitaxial Graphene by Erbium. ACS OMEGA 2023; 8:37600-37609. [PMID: 37841144 PMCID: PMC10568997 DOI: 10.1021/acsomega.3c06523] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Accepted: 09/15/2023] [Indexed: 10/17/2023]
Abstract
Manipulating the topological defects and electronic properties of graphene has been a subject of great interest. In this work, we have investigated the influence of Er predeposition on flower defects and electronic band structures of epitaxial graphene on SiC. It is shown that Er atoms grown on the SiC substrate actually work as an activator to induce flower defect formation with a density of 1.52 × 1012 cm-2 during the graphitization process when the Er coverage is 1.6 ML, about 5 times as much as that of pristine graphene. First-principles calculations demonstrate that Er greatly decreases the formation energy of the flower defect. We have discussed Er promoting effects on flower defect formation as well as its formation mechanism. Scanning tunneling microscopy (STM) and Raman and X-ray photoelectron spectroscopy (XPS) have been utilized to reveal the Er doping effect and its modification to electronic structures of graphene. N-doping enhancement and band gap opening can be observed by using angle-resolved photoemission spectroscopy (ARPES). With Er coverage increasing from 0 to 1.6 ML, the Dirac point energy decreases from -0.34 to -0.37 eV and the band gap gradually increases from 320 to 360 meV. The opening of the band gap is attributed to the synergistic effect of substitution doping of Er atoms and high-density flower defects.
Collapse
Affiliation(s)
- Yong Duan
- State Key Laboratory of Surface
Physics and Department of Physics, Fudan
University, Shanghai 200433, People’s
Republic of China
| | - Wenting Xu
- State Key Laboratory of Surface
Physics and Department of Physics, Fudan
University, Shanghai 200433, People’s
Republic of China
| | - Wenxia Kong
- State Key Laboratory of Surface
Physics and Department of Physics, Fudan
University, Shanghai 200433, People’s
Republic of China
| | - Jianxin Wang
- State Key Laboratory of Surface
Physics and Department of Physics, Fudan
University, Shanghai 200433, People’s
Republic of China
| | - Jinzhe Zhang
- State Key Laboratory of Surface
Physics and Department of Physics, Fudan
University, Shanghai 200433, People’s
Republic of China
| | - Zhongqin Yang
- State Key Laboratory of Surface
Physics and Department of Physics, Fudan
University, Shanghai 200433, People’s
Republic of China
| | - Qun Cai
- State Key Laboratory of Surface
Physics and Department of Physics, Fudan
University, Shanghai 200433, People’s
Republic of China
| |
Collapse
|
7
|
Li Y, Wan Q, Xu N. Recent Advances in Moiré Superlattice Systems by Angle-Resolved Photoemission Spectroscopy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305175. [PMID: 37689836 DOI: 10.1002/adma.202305175] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Revised: 08/16/2023] [Indexed: 09/11/2023]
Abstract
The last decade has witnessed a flourish in 2D materials including graphene and transition metal dichalcogenides (TMDs) as atomic-scale Legos. Artificial moiré superlattices via stacking 2D materials with a twist angle and/or a lattice mismatch have recently become a fertile playground exhibiting a plethora of emergent properties beyond their building blocks. These rich quantum phenomena stem from their nontrivial electronic structures that are effectively tuned by the moiré periodicity. Modern angle-resolved photoemission spectroscopy (ARPES) can directly visualize electronic structures with decent momentum, energy, and spatial resolution, thus can provide enlightening insights into fundamental physics in moiré superlattice systems and guides for designing novel devices. In this review, first, a brief introduction is given on advanced ARPES techniques and basic ideas of band structures in a moiré superlattice system. Then ARPES research results of various moiré superlattice systems are highlighted, including graphene on substrates with small lattice mismatches, twisted graphene/TMD moiré systems, and high-order moiré superlattice systems. Finally, it discusses important questions that remain open, challenges in current experimental investigations, and presents an outlook on this field of research.
Collapse
Affiliation(s)
- Yiwei Li
- Institute for Advanced Studies (IAS), Wuhan University, Wuhan, 430072, China
| | - Qiang Wan
- Institute for Advanced Studies (IAS), Wuhan University, Wuhan, 430072, China
| | - Nan Xu
- Institute for Advanced Studies (IAS), Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
| |
Collapse
|
8
|
Kim G, Kim D, Choi Y, Ghorai A, Park G, Jeong U. New Approaches to Produce Large-Area Single Crystal Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203373. [PMID: 35737971 DOI: 10.1002/adma.202203373] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/14/2022] [Revised: 06/15/2022] [Indexed: 06/15/2023]
Abstract
Wafer-scale growth of single crystal thin films of metals, semiconductors, and insulators is crucial for manufacturing high-performance electronic and optical devices, but still challenging from both scientific and industrial perspectives. Recently, unconventional advanced synthetic approaches have been attempted and have made remarkable progress in diversifying the species of producible single crystal thin films. This review introduces several new synthetic approaches to produce large-area single crystal thin films of various materials according to the concepts and principles.
Collapse
Affiliation(s)
- Geonwoo Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Dongbeom Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Yoonsun Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Arup Ghorai
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| |
Collapse
|
9
|
Singh A, Ahmed A, Sharma A, Arya S. Graphene and Its Derivatives: Synthesis and Application in the Electrochemical Detection of Analytes in Sweat. BIOSENSORS 2022; 12:910. [PMID: 36291046 PMCID: PMC9599499 DOI: 10.3390/bios12100910] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2022] [Revised: 10/07/2022] [Accepted: 10/15/2022] [Indexed: 05/25/2023]
Abstract
Wearable sensors and invasive devices have been studied extensively in recent years as the demand for real-time human healthcare applications and seamless human-machine interaction has risen exponentially. An explosion in sensor research throughout the globe has been ignited by the unique features such as thermal, electrical, and mechanical properties of graphene. This includes wearable sensors and implants, which can detect a wide range of data, including body temperature, pulse oxygenation, blood pressure, glucose, and the other analytes present in sweat. Graphene-based sensors for real-time human health monitoring are also being developed. This review is a comprehensive discussion about the properties of graphene, routes to its synthesis, derivatives of graphene, etc. Moreover, the basic features of a biosensor along with the chemistry of sweat are also discussed in detail. The review mainly focusses on the graphene and its derivative-based wearable sensors for the detection of analytes in sweat. Graphene-based sensors for health monitoring will be examined and explained in this study as an overview of the most current innovations in sensor designs, sensing processes, technological advancements, sensor system components, and potential hurdles. The future holds great opportunities for the development of efficient and advanced graphene-based sensors for the detection of analytes in sweat.
Collapse
Affiliation(s)
| | | | | | - Sandeep Arya
- Department of Physics, University of Jammu, Jammu 180006, India
| |
Collapse
|
10
|
Graphene-based electrode materials used for some pesticide’s detection in food samples: A review. INORG CHEM COMMUN 2022. [DOI: 10.1016/j.inoche.2022.109891] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2022]
|
11
|
Awada H, Kontopoulou M, Docoslis A. A note on using expanded graphite for achieving energy‐ and time‐efficient production of graphene nanoplatelets via liquid phase exfoliation. CAN J CHEM ENG 2022. [DOI: 10.1002/cjce.24586] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Hassan Awada
- Department of Chemical Engineering Queen’s University Kingston ON Canada
| | | | - Aristides Docoslis
- Department of Chemical Engineering Queen’s University Kingston ON Canada
| |
Collapse
|
12
|
Xu X, Guo T, Kim H, Hota MK, Alsaadi RS, Lanza M, Zhang X, Alshareef HN. Growth of 2D Materials at the Wafer Scale. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108258. [PMID: 34860446 DOI: 10.1002/adma.202108258] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 11/29/2021] [Indexed: 06/13/2023]
Abstract
Wafer-scale growth has become a critical bottleneck for scaling up applications of van der Waal (vdW) layered 2D materials in high-end electronics and optoelectronics. Most vdW 2D materials are initially obtained through top-down synthesis methods, such as exfoliation, which can only prepare small flakes on a micrometer scale. Bottom-up growth can enable 2D flake growth over a large area. However, seamless merging of these flakes to form large-area continuous films with well-controlled layer thickness and lattice orientation is still a significant challenge. This review briefly introduces several vdW layered 2D materials covering their lattice structures, representative physical properties, and potential roles in large-scale applications. Then, several methods used to grow vdW layered 2D materials at the wafer scale are reviewed in depth. In particular, three strategies are summarized that enable 2D film growth with a single-crystalline structure over the whole wafer: growth of an isolated domain, growth of unidirectional domains, and conversion of oriented precursors. After that, the progress in using wafer-scale 2D materials in integrated devices and advanced epitaxy is reviewed. Finally, future directions in the growth and scaling of vdW layered 2D materials are discussed.
Collapse
Affiliation(s)
- Xiangming Xu
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tianchao Guo
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Hyunho Kim
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mrinal K Hota
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Rajeh S Alsaadi
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mario Lanza
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Husam N Alshareef
- Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| |
Collapse
|
13
|
Li X, Liang X, Wang Y, Wang D, Teng M, Xu H, Zhao B, Han L. Graphene-Based Nanomaterials for Dental Applications: Principles, Current Advances, and Future Outlook. Front Bioeng Biotechnol 2022; 10:804201. [PMID: 35360406 PMCID: PMC8961302 DOI: 10.3389/fbioe.2022.804201] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/29/2021] [Accepted: 02/08/2022] [Indexed: 12/13/2022] Open
Abstract
With the development of nanotechnology, nanomaterials have been used in dental fields over the past years. Among them, graphene and its derivatives have attracted great attentions, owing to their excellent physicochemical property, morphology, biocompatibility, multi-differentiation activity, and antimicrobial activity. In our review, we summarized the recent progress about their applications on the dentistry. The synthesis methods, structures, and properties of graphene-based materials are discussed. Then, the dental applications of graphene-based materials are emphatically collected and described. Finally, the challenges and outlooks of graphene-based nanomaterials on the dental applications are discussed in this paper, aiming at inspiring more excellent studies.
Collapse
Affiliation(s)
- Xiaojing Li
- Department of Oral Implantology, The Affiliated Hospital of Qingdao University, Qingdao, China
| | - Xin Liang
- College of Chemistry and Pharmaceutical Sciences, Qingdao Agricultural University, Qingdao, China
| | - Yanhui Wang
- Department of Oral Implantology, The Affiliated Hospital of Qingdao University, Qingdao, China
| | - Dashan Wang
- Department of Oral Implantology, The Affiliated Hospital of Qingdao University, Qingdao, China
| | - Minhua Teng
- Department of Oral Implantology, The Affiliated Hospital of Qingdao University, Qingdao, China
| | - Hao Xu
- Department of Oral Implantology, The Affiliated Hospital of Qingdao University, Qingdao, China
| | - Baodong Zhao
- Department of Oral Implantology, The Affiliated Hospital of Qingdao University, Qingdao, China
- *Correspondence: Baodong Zhao, ; Lei Han,
| | - Lei Han
- College of Chemistry and Pharmaceutical Sciences, Qingdao Agricultural University, Qingdao, China
- *Correspondence: Baodong Zhao, ; Lei Han,
| |
Collapse
|
14
|
Irani FS, Shafaghi AH, Tasdelen MC, Delipinar T, Kaya CE, Yapici GG, Yapici MK. Graphene as a Piezoresistive Material in Strain Sensing Applications. MICROMACHINES 2022; 13:119. [PMID: 35056284 PMCID: PMC8779301 DOI: 10.3390/mi13010119] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Revised: 12/23/2021] [Accepted: 12/28/2021] [Indexed: 02/07/2023]
Abstract
High accuracy measurement of mechanical strain is critical and broadly practiced in several application areas including structural health monitoring, industrial process control, manufacturing, avionics and the automotive industry, to name a few. Strain sensors, otherwise known as strain gauges, are fueled by various nanomaterials, among which graphene has attracted great interest in recent years, due to its unique electro-mechanical characteristics. Graphene shows not only exceptional physical properties but also has remarkable mechanical properties, such as piezoresistivity, which makes it a perfect candidate for strain sensing applications. In the present review, we provide an in-depth overview of the latest studies focusing on graphene and its strain sensing mechanism along with various applications. We start by providing a description of the fundamental properties, synthesis techniques and characterization methods of graphene, and then build forward to the discussion of numerous types of graphene-based strain sensors with side-by-side tabular comparison in terms of figures-of-merit, including strain range and sensitivity, otherwise referred to as the gauge factor. We demonstrate the material synthesis, device fabrication and integration challenges for researchers to achieve both wide strain range and high sensitivity in graphene-based strain sensors. Last of all, several applications of graphene-based strain sensors for different purposes are described. All in all, the evolutionary process of graphene-based strain sensors in recent years, as well as the upcoming challenges and future directions for emerging studies are highlighted.
Collapse
Affiliation(s)
- Farid Sayar Irani
- Faculty of Engineering and Natural Sciences, Sabanci University, Istanbul TR 34956, Turkey; (F.S.I.); (A.H.S.); (M.C.T.); (T.D.)
| | - Ali Hosseinpour Shafaghi
- Faculty of Engineering and Natural Sciences, Sabanci University, Istanbul TR 34956, Turkey; (F.S.I.); (A.H.S.); (M.C.T.); (T.D.)
| | - Melih Can Tasdelen
- Faculty of Engineering and Natural Sciences, Sabanci University, Istanbul TR 34956, Turkey; (F.S.I.); (A.H.S.); (M.C.T.); (T.D.)
| | - Tugce Delipinar
- Faculty of Engineering and Natural Sciences, Sabanci University, Istanbul TR 34956, Turkey; (F.S.I.); (A.H.S.); (M.C.T.); (T.D.)
| | - Ceyda Elcin Kaya
- Department of Electrical and Computer Engineering, University of Tulsa, Tulsa, OK 74104, USA;
| | - Guney Guven Yapici
- Department of Mechanical Engineering, Ozyegin University, Istanbul TR 34794, Turkey;
| | - Murat Kaya Yapici
- Faculty of Engineering and Natural Sciences, Sabanci University, Istanbul TR 34956, Turkey; (F.S.I.); (A.H.S.); (M.C.T.); (T.D.)
- Department of Electrical Engineering, University of Washington, Seattle, WA 98195, USA
- SUNUM Nanotechnology Research Center, Istanbul TR 34956, Turkey
| |
Collapse
|
15
|
|
16
|
Endoh N, Akiyama S, Tashima K, Suwa K, Kamogawa T, Kohama R, Funakubo K, Konishi S, Mogi H, Kawahara M, Kawai M, Kubota Y, Ohkochi T, Kotsugi M, Horiba K, Kumigashira H, Suemitsu M, Watanabe I, Fukidome H. High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications. NANOMATERIALS 2021; 11:nano11020392. [PMID: 33557014 PMCID: PMC7913666 DOI: 10.3390/nano11020392] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/30/2020] [Revised: 01/04/2021] [Accepted: 01/08/2021] [Indexed: 12/04/2022]
Abstract
Graphene is promising for next-generation devices. However, one of the primary challenges in realizing these devices is the scalable growth of high-quality few-layer graphene (FLG) on device-type wafers; it is difficult to do so while balancing both quality and affordability. High-quality graphene is grown on expensive SiC bulk crystals, while graphene on SiC thin films grown on Si substrates (GOS) exhibits low quality but affordable cost. We propose a new method for the growth of high-quality FLG on a new template named “hybrid SiC”. The hybrid SiC is produced by bonding a SiC bulk crystal with an affordable device-type wafer and subsequently peeling off the SiC bulk crystal to obtain a single-crystalline SiC thin film on the wafer. The quality of FLG on this hybrid SiC is comparable to that of FLG on SiC bulk crystals and much higher than of GOS. FLG on the hybrid SiC exhibited high carrier mobilities, comparable to those on SiC bulk crystals, as anticipated from the linear band dispersions. Transistors using FLG on the hybrid SiC showed the potential to operate in terahertz frequencies. The proposed method is suited for growing high-quality FLG on desired substrates with the aim of realizing graphene-based high-speed devices.
Collapse
Affiliation(s)
- Norifumi Endoh
- Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan; (N.E.); (K.T.); (K.S.); (T.K.); (R.K.); (K.F.); (M.S.)
| | - Shoji Akiyama
- Shin-Etsu Chemical Co., Ltd., Chiyoda-ku, Tokyo 100-0004, Japan; (S.A.); (S.K.); (H.M.); (M.K.); (M.K.); (Y.K.)
| | - Keiichiro Tashima
- Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan; (N.E.); (K.T.); (K.S.); (T.K.); (R.K.); (K.F.); (M.S.)
| | - Kento Suwa
- Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan; (N.E.); (K.T.); (K.S.); (T.K.); (R.K.); (K.F.); (M.S.)
| | - Takamasa Kamogawa
- Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan; (N.E.); (K.T.); (K.S.); (T.K.); (R.K.); (K.F.); (M.S.)
| | - Roki Kohama
- Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan; (N.E.); (K.T.); (K.S.); (T.K.); (R.K.); (K.F.); (M.S.)
| | - Kazutoshi Funakubo
- Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan; (N.E.); (K.T.); (K.S.); (T.K.); (R.K.); (K.F.); (M.S.)
| | - Shigeru Konishi
- Shin-Etsu Chemical Co., Ltd., Chiyoda-ku, Tokyo 100-0004, Japan; (S.A.); (S.K.); (H.M.); (M.K.); (M.K.); (Y.K.)
| | - Hiroshi Mogi
- Shin-Etsu Chemical Co., Ltd., Chiyoda-ku, Tokyo 100-0004, Japan; (S.A.); (S.K.); (H.M.); (M.K.); (M.K.); (Y.K.)
| | - Minoru Kawahara
- Shin-Etsu Chemical Co., Ltd., Chiyoda-ku, Tokyo 100-0004, Japan; (S.A.); (S.K.); (H.M.); (M.K.); (M.K.); (Y.K.)
| | - Makoto Kawai
- Shin-Etsu Chemical Co., Ltd., Chiyoda-ku, Tokyo 100-0004, Japan; (S.A.); (S.K.); (H.M.); (M.K.); (M.K.); (Y.K.)
| | - Yoshihiro Kubota
- Shin-Etsu Chemical Co., Ltd., Chiyoda-ku, Tokyo 100-0004, Japan; (S.A.); (S.K.); (H.M.); (M.K.); (M.K.); (Y.K.)
| | - Takuo Ohkochi
- Japan Synchrotron Radiation Research Institute, Sayo, Hyogo 679-5198, Japan; (T.O.); (M.K.)
| | - Masato Kotsugi
- Japan Synchrotron Radiation Research Institute, Sayo, Hyogo 679-5198, Japan; (T.O.); (M.K.)
| | - Koji Horiba
- Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan; (K.H.); (H.K.)
| | - Hiroshi Kumigashira
- Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Ibaraki 305-0801, Japan; (K.H.); (H.K.)
- Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai, Miyagi 980-8577, Japan
| | - Maki Suemitsu
- Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan; (N.E.); (K.T.); (K.S.); (T.K.); (R.K.); (K.F.); (M.S.)
| | - Issei Watanabe
- National Institute of Information and Communication Technology, Koganei, Tokyo 184-8795, Japan;
| | - Hirokazu Fukidome
- Research Institute of Electrical Communication, Tohoku University, Sendai, Miyagi 980-8577, Japan; (N.E.); (K.T.); (K.S.); (T.K.); (R.K.); (K.F.); (M.S.)
- Correspondence:
| |
Collapse
|
17
|
Fu S, du Fossé I, Jia X, Xu J, Yu X, Zhang H, Zheng W, Krasel S, Chen Z, Wang ZM, Tielrooij KJ, Bonn M, Houtepen AJ, Wang HI. Long-lived charge separation following pump-wavelength-dependent ultrafast charge transfer in graphene/WS 2 heterostructures. SCIENCE ADVANCES 2021; 7:7/9/eabd9061. [PMID: 33637529 PMCID: PMC7909886 DOI: 10.1126/sciadv.abd9061] [Citation(s) in RCA: 36] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2020] [Accepted: 01/12/2021] [Indexed: 05/27/2023]
Abstract
Van der Waals heterostructures consisting of graphene and transition metal dichalcogenides have shown great promise for optoelectronic applications. However, an in-depth understanding of the critical processes for device operation, namely, interfacial charge transfer (CT) and recombination, has so far remained elusive. Here, we investigate these processes in graphene-WS2 heterostructures by complementarily probing the ultrafast terahertz photoconductivity in graphene and the transient absorption dynamics in WS2 following photoexcitation. We observe that separated charges in the heterostructure following CT live extremely long: beyond 1 ns, in contrast to ~1 ps charge separation reported in previous studies. This leads to efficient photogating of graphene. Furthermore, for the CT process across graphene-WS2 interfaces, we find that it occurs via photo-thermionic emission for sub-A-exciton excitations and direct hole transfer from WS2 to the valence band of graphene for above-A-exciton excitations. These findings provide insights to further optimize the performance of optoelectronic devices, in particular photodetection.
Collapse
Affiliation(s)
- Shuai Fu
- Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Indy du Fossé
- Optoelectronic Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, Netherlands
| | - Xiaoyu Jia
- Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Jingyin Xu
- Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
| | - Xiaoqing Yu
- Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Heng Zhang
- Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Wenhao Zheng
- Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Sven Krasel
- Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Zongping Chen
- School of Materials Science and Engineering, Zhejiang University, Zheda Road 38, Hangzhou 310027, China
| | - Zhiming M Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, P. R. China
| | - Klaas-Jan Tielrooij
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), BIST and CSIC, Campus UAB, Bellaterra, 08193 Barcelona, Spain
| | - Mischa Bonn
- Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany
| | - Arjan J Houtepen
- Optoelectronic Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, Netherlands
| | - Hai I Wang
- Max Planck Institute for Polymer Research, Ackermannweg 10, D-55128 Mainz, Germany.
| |
Collapse
|
18
|
Araujo FDV, Oliveira VV, Gadelha AC, Carvalho TCV, Fernandes TFD, Silva FWN, Longuinhos R, Ribeiro-Soares J, Jorio A, Souza Filho AG, Alencar RS, Viana BC. Temperature-dependent phonon dynamics and anharmonicity of suspended and supported few-layer gallium sulfide. NANOTECHNOLOGY 2020; 31:495702. [PMID: 32990274 DOI: 10.1088/1361-6528/abb107] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Phonons play a fundamental role in the electronic and thermal transport of 2D materials which is crucial for device applications. In this work, we investigate the temperature-dependence of A[Formula: see text] and A[Formula: see text] Raman modes of suspended and supported mechanically exfoliated few-layer gallium sulfide (GaS), accessing their relevant thermodynamic Grüneisen parameters and anharmonicity. The Raman frequencies of these two phonons soften with increasing temperature with different [Formula: see text] temperature coefficients. The first-order temperature coefficients θ of A[Formula: see text] mode is ∼ -0.016 cm-1/K, independent of the number of layers and the support. In contrast, the θ of A[Formula: see text] mode is smaller for two-layer GaS and constant for thicker samples (∼ -0.006 2 cm-1 K-1). Furthermore, for two-layer GaS, the θ value is ∼ -0.004 4 cm-1 K-1 for the supported sample, while it is even smaller for the suspended one (∼ -0.002 9 cm-1 K-1). The higher θ value for supported and thicker samples was attributed to the increase in phonon anharmonicity induced by the substrate surface roughness and Umklapp phonon scattering. Our results shed new light on the influence of the substrate and number of layers on the thermal properties of few-layer GaS, which are fundamental for developing atomically-thin GaS electronic devices.
Collapse
Affiliation(s)
- Francisco D V Araujo
- Pós-Graduação em Ciência e Engenharia dos Materiais, Universidade Federal do Piauí, Teresina, Piauí, 64049-550, Brazil
- Instituto Federal de Educação, Ciência e Tecnologia do Piauí-IFPI, 64760-000, Piauí, Brazil
| | - Victor V Oliveira
- Faculdade de Física, Universidade Federal do Pará, Belém, Pará, 66075-110 Brazil
| | - Andreij C Gadelha
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais, 30270-901 Brazil
| | - Thais C V Carvalho
- Departamento de Física, Universidade Federal do Piauí, Teresina, Piauí, 64049-550, Brazil
| | - Thales F D Fernandes
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais, 30270-901 Brazil
| | - Francisco W N Silva
- Instituto Federal de Educação, Ciência e Tecnologia do Maranhão-Campus Alcântara, Alcântara, Maranhão, Brazil
| | - R Longuinhos
- Departamento de Física, Universidade Federal de Lavras, Lavras, Minas Gerais, 37200-000, Brazil
| | - Jenaina Ribeiro-Soares
- Departamento de Física, Universidade Federal de Lavras, Lavras, Minas Gerais, 37200-000, Brazil
| | - Ado Jorio
- Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais, 30270-901 Brazil
| | - Antonio G Souza Filho
- Departamento de Física, Centro de Ciências, Universidade Federal do Ceará, Fortaleza, Ceará, 60455-900, Brazil
| | - Rafael S Alencar
- Faculdade de Física, Universidade Federal do Pará, Belém, Pará, 66075-110 Brazil
| | - Bartolomeu C Viana
- Pós-Graduação em Ciência e Engenharia dos Materiais, Universidade Federal do Piauí, Teresina, Piauí, 64049-550, Brazil
- Departamento de Física, Universidade Federal do Piauí, Teresina, Piauí, 64049-550, Brazil
| |
Collapse
|
19
|
Mohd Firdaus R, Berrada N, Desforges A, Mohamed AR, Vigolo B. From 2D Graphene Nanosheets to 3D Graphene-based Macrostructures. Chem Asian J 2020; 15:2902-2924. [PMID: 32779360 DOI: 10.1002/asia.202000747] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2020] [Revised: 08/09/2020] [Indexed: 12/29/2022]
Abstract
The combination of exceptional functionalities offered by 3D graphene-based macrostructures (GBMs) has attracted tremendous interest. 2D graphene nanosheets have a high chemical stability, high surface area and customizable porosity, which was extensively researched for a variety of applications including CO2 adsorption, water treatment, batteries, sensors, catalysis, etc. Recently, 3D GBMs have been successfully achieved through few approaches, including direct and non-direct self-assembly methods. In this review, the possible routes used to prepare both 2D graphene and interconnected 3D GBMs are described and analyzed regarding the involved chemistry of each 2D/3D graphene system. Improvement of the accessible surface of 3D GBMs where the interface exchanges are occurring is of great importance. A better control of the chemical mechanisms involved in the self-assembly mechanism itself at the nanometer scale is certainly the key for a future research breakthrough regarding 3D GBMs.
Collapse
Affiliation(s)
- Rabita Mohd Firdaus
- School of Chemical Engineering, Engineering Campus Universiti Sains, Malaysia, 14300, Nibong Tebal, Seberang, Perai Selatan, P., Pinang, Malaysia.,Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | - Nawal Berrada
- Université de Lorraine, CNRS, IJL, F-54000, Nancy, France
| | | | - Abdul Rahman Mohamed
- School of Chemical Engineering, Engineering Campus Universiti Sains, Malaysia, 14300, Nibong Tebal, Seberang, Perai Selatan, P., Pinang, Malaysia
| | | |
Collapse
|
20
|
Saha D, Yu X, Du Y, Guo Z, Xiong F, Gellman AJ, Malen JA. Enhancing Thermal Interface Conductance to Graphene Using Ni-Pd Alloy Contacts. ACS APPLIED MATERIALS & INTERFACES 2020; 12:34317-34322. [PMID: 32608964 DOI: 10.1021/acsami.0c06953] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
To identify superior thermal contacts to graphene, we implement a high-throughput methodology that systematically explores the Ni-Pd alloy composition spectrum and the effect of Cr adhesion layer thickness on thermal interface conductance with monolayer graphene. Frequency domain thermoreflectance measurements of two independently prepared Ni-Pd/Cr/graphene/SiO2 samples identify a maximum metal/graphene/SiO2 junction thermal interface conductance of 114 ± (39, 25) MW/m2 K and 113 ± (33, 22) MW/m2 K at ∼10 at. % Pd in Ni-nearly double the highest reported value for pure metals and 3 times that of pure Ni or Pd. The presence of Cr, at any thickness, suppresses this maximum. Although the origin of the peak is unresolved, we find that it correlates with a region of the Ni-Pd phase diagram that exhibits a miscibility gap. Cross-sectional imaging by high-resolution transmission electron microscopy identifies striations in the alloy at this particular composition, consistent with separation into multiple phases. Through this work, we draw attention to alloys in the search for better contacts to two-dimensional materials for next-generation devices.
Collapse
Affiliation(s)
- Dipanjan Saha
- Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Xiaoxiao Yu
- Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Yanhao Du
- Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261, United States
| | - Zhitao Guo
- Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Feng Xiong
- Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15261, United States
| | - Andrew J Gellman
- Department of Chemical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
- W. E. Scott Institute for Energy Innovation, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Jonathan A Malen
- Department of Mechanical Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| |
Collapse
|
21
|
Qiao Y, Gou G, Wu F, Jian J, Li X, Hirtz T, Zhao Y, Zhi Y, Wang F, Tian H, Yang Y, Ren TL. Graphene-Based Thermoacoustic Sound Source. ACS NANO 2020; 14:3779-3804. [PMID: 32186849 DOI: 10.1021/acsnano.9b10020] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Thermoacoustic (TA) effect has been discovered for more than 130 years. However, limited by the material characteristics, the performance of a TA sound source could not be compared with magnetoelectric and piezoelectric loudspeakers. Recently, graphene, a two-dimensional material with the lowest heat capacity per unit area, was discovered to have a good TA performance. Compared with a traditional sound source, graphene TA sound sources (GTASSs) have many advantages, such as small volume, no diaphragm vibration, wide frequency range, high transparency, good flexibility, and high sound pressure level (SPL). Therefore, graphene has a great potential as a next-generation sound source. Photoacoustic (PA) imaging can also be applied to the diagnosis and treatment of diseases using the photothermo-acoustic (PTA) effect. Therefore, in this review, we will introduce the history of TA devices. Then, the theory and simulation model of TA will be analyzed in detail. After that, we will talk about the graphene synthesis method. To improve the performance of GTASSs, many strategies such as lowering the thickness and using porous or suspended structures will be introduced. With a good PTA effect and large specific area, graphene PA imaging and drug delivery is a promising prospect in cancer treatment. Finally, the challenges and prospects of GTASSs will be discussed.
Collapse
Affiliation(s)
- Yancong Qiao
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Guangyang Gou
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Fan Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Jinming Jian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Xiaoshi Li
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Thomas Hirtz
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yunfei Zhao
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yao Zhi
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Fangwei Wang
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Yi Yang
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, China
| |
Collapse
|
22
|
Nirmalraj PN, List J, Battacharya S, Howe G, Xu L, Thompson D, Mayer M. Complete aggregation pathway of amyloid β (1-40) and (1-42) resolved on an atomically clean interface. SCIENCE ADVANCES 2020; 6:eaaz6014. [PMID: 32285004 PMCID: PMC7141833 DOI: 10.1126/sciadv.aaz6014] [Citation(s) in RCA: 70] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/23/2019] [Accepted: 01/14/2020] [Indexed: 05/22/2023]
Abstract
To visualize amyloid β (Aβ) aggregates requires an uncontaminated and artifact-free interface. This paper demonstrates the interface between graphene and pure water (verified to be atomically clean using tunneling microscopy) as an ideal platform for resolving size, shape, and morphology (measured by atomic force microscopy) of Aβ-40 and Aβ-42 peptide assemblies from 0.5 to 150 hours at a 5-hour time interval with single-particle resolution. After confirming faster aggregation of Aβ-42 in comparison to Aβ-40, a stable set of oligomers with a diameter distribution of ~7 to 9 nm was prevalently observed uniquely for Aβ-42 even after fibril appearance. The interaction energies between a distinct class of amyloid aggregates (dodecamers) and graphene was then quantified using molecular dynamics simulations. Last, differences in Aβ-40 and Aβ-42 networks were resolved, wherein only Aβ-42 fibrils were aligned through lateral interactions over micrometer-scale lengths, a property that could be exploited in the design of biofunctional materials.
Collapse
Affiliation(s)
- Peter Niraj Nirmalraj
- Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, CH-1700 Fribourg, Switzerland
- Transport at Nanoscale Interfaces Laboratory, Swiss Federal Laboratories for Materials Science and Technology, Dübendorf CH-8600, Switzerland
- Corresponding author.
| | - Jonathan List
- Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, CH-1700 Fribourg, Switzerland
| | - Shayon Battacharya
- Department of Physics, Bernal Institute, University of Limerick, Limerick V94T9PX, Ireland
| | - Geoffrey Howe
- Department of Physics, Bernal Institute, University of Limerick, Limerick V94T9PX, Ireland
| | - Liang Xu
- Department of Physics, Bernal Institute, University of Limerick, Limerick V94T9PX, Ireland
| | - Damien Thompson
- Department of Physics, Bernal Institute, University of Limerick, Limerick V94T9PX, Ireland
| | - Michael Mayer
- Adolphe Merkle Institute, University of Fribourg, Chemin des Verdiers 4, CH-1700 Fribourg, Switzerland
| |
Collapse
|
23
|
Yang X, Zhang G, Prakash J, Chen Z, Gauthier M, Sun S. Chemical vapour deposition of graphene: layer control, the transfer process, characterisation, and related applications. INT REV PHYS CHEM 2019. [DOI: 10.1080/0144235x.2019.1634319] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
Affiliation(s)
- Xiaohua Yang
- Institut National de la Recherche Scientifique-Énergie Matériaux et Télécommunications, Varennes, Canada
| | - Gaixia Zhang
- Institut National de la Recherche Scientifique-Énergie Matériaux et Télécommunications, Varennes, Canada
| | - Jai Prakash
- Institut National de la Recherche Scientifique-Énergie Matériaux et Télécommunications, Varennes, Canada
- Department of Chemistry, National Institute of Technology Hamirpur, Hamirpur, India
| | - Zhangsen Chen
- Institut National de la Recherche Scientifique-Énergie Matériaux et Télécommunications, Varennes, Canada
| | - Marc Gauthier
- Institut National de la Recherche Scientifique-Énergie Matériaux et Télécommunications, Varennes, Canada
| | - Shuhui Sun
- Institut National de la Recherche Scientifique-Énergie Matériaux et Télécommunications, Varennes, Canada
| |
Collapse
|
24
|
Review on graphene and its derivatives: Synthesis methods and potential industrial implementation. J Taiwan Inst Chem Eng 2019. [DOI: 10.1016/j.jtice.2018.10.028] [Citation(s) in RCA: 201] [Impact Index Per Article: 40.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
|
25
|
Barjasteh E, Sutanto C, Nepal D. Conductive Polyamide-Graphene Composite Fabric via Interface Engineering. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2019; 35:2261-2269. [PMID: 30649887 DOI: 10.1021/acs.langmuir.8b03543] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Conductive fabrics have received significant attention because of their widespread applications from smart textiles to energy storage devices. Conductive colloidal materials are preferred as a coating on the fabric to achieve desirable electronic conductivity; however, obtaining a uniform coverage with a simple and effective route is a challenge. Herein, we report exfoliated graphene nanoplatelets (GNPs) in low boiling point solvents and their subsequent coating onto a polyamide fabric surface. Few-layered (average <7 layers) GNPs were obtained by optimizing solubility parameters of solvent mixtures and sonication time. Raman spectroscopy showed that the ID/ IG ratio changed from 0.33 to 0.38 in the GNP solution before and after the sonication, confirming an insignificant increase in defects on the basal plane of graphene after sonication treatment. Uniform coating of GNPs was obtained by optimizing concentration and sonication times. Scanning electron microscopy showed a uniform coverage of GNPs, and the surface resistivity of the polyamide fabric decreased from infinity to ∼40 kΩ after 4 h of coating. X-ray diffraction analysis confirmed the minimal effect on the fabric crystallinity during processing. This interface engineering approach is simple and scalable, and it is applicable for the coating of different polymeric fabrics with a great promise in electronic textiles.
Collapse
Affiliation(s)
| | | | - Dhriti Nepal
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright-Patterson AFB , Dayton , Ohio 45433-7702 , United States
| |
Collapse
|
26
|
Liao C, Li Y, Tjong SC. Graphene Nanomaterials: Synthesis, Biocompatibility, and Cytotoxicity. Int J Mol Sci 2018; 19:E3564. [PMID: 30424535 PMCID: PMC6274822 DOI: 10.3390/ijms19113564] [Citation(s) in RCA: 211] [Impact Index Per Article: 35.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/12/2018] [Revised: 11/08/2018] [Accepted: 11/08/2018] [Indexed: 12/12/2022] Open
Abstract
Graphene, graphene oxide, and reduced graphene oxide have been widely considered as promising candidates for industrial and biomedical applications due to their exceptionally high mechanical stiffness and strength, excellent electrical conductivity, high optical transparency, and good biocompatibility. In this article, we reviewed several techniques that are available for the synthesis of graphene-based nanomaterials, and discussed the biocompatibility and toxicity of such nanomaterials upon exposure to mammalian cells under in vitro and in vivo conditions. Various synthesis strategies have been developed for their fabrication, generating graphene nanomaterials with different chemical and physical properties. As such, their interactions with cells and organs are altered accordingly. Conflicting results relating biocompatibility and cytotoxicity induced by graphene nanomaterials have been reported in the literature. In particular, graphene nanomaterials that are used for in vitro cell culture and in vivo animal models may contain toxic chemical residuals, thereby interfering graphene-cell interactions and complicating interpretation of experimental results. Synthesized techniques, such as liquid phase exfoliation and wet chemical oxidation, often required toxic organic solvents, surfactants, strong acids, and oxidants for exfoliating graphite flakes. Those organic molecules and inorganic impurities that are retained in final graphene products can interact with biological cells and tissues, inducing toxicity or causing cell death eventually. The residual contaminants can cause a higher risk of graphene-induced toxicity in biological cells. This adverse effect may be partly responsible for the discrepancies between various studies in the literature.
Collapse
Affiliation(s)
- Chengzhu Liao
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
| | - Yuchao Li
- Department of Materials Science and Engineering, Liaocheng University, Liaocheng 252000, China.
| | - Sie Chin Tjong
- Department of Physics, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China.
| |
Collapse
|
27
|
Cavallucci T, Tozzini V. Intrinsic structural and electronic properties of the Buffer Layer on Silicon Carbide unraveled by Density Functional Theory. Sci Rep 2018; 8:13097. [PMID: 30166596 PMCID: PMC6117312 DOI: 10.1038/s41598-018-31490-7] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/25/2018] [Accepted: 08/15/2018] [Indexed: 11/09/2022] Open
Abstract
The buffer carbon layer obtained in the first instance by evaporation of Si from the Si-rich surfaces of silicon carbide (SiC) is often studied only as the intermediate to the synthesis of SiC supported graphene. In this work, we explore its intrinsic potentialities, addressing its structural and electronic properties by means of Density Functional Theory. While the system of corrugation crests organized in a honeycomb super-lattice of nano-metric side returned by calculations is compatible with atomic microscopy observations, our work reveals some possible alternative symmetries, which might coexist in the same sample. The electronic structure analysis reveals the presence of an electronic gap of ~0.7 eV. In-gap states are present, localized over the crests, while near-gap states reveal very different structure and space localization, being either bonding states or outward pointing p orbitals and unsaturated Si dangling bonds. On one hand, the presence of these interface states was correlated with the n-doping of the monolayer graphene subsequently grown on the buffer. On the other hand, the correlation between their chemical character and their space localization is likely to produce a differential reactivity towards specific functional groups with a spatial regular modulation at the nano-scale, opening perspectives for a finely controlled chemical functionalization.
Collapse
Affiliation(s)
- Tommaso Cavallucci
- Istituto Nanoscienze, Cnr, Piazza San Silvestro 12, 56127, Pisa, Italy.,NEST- Scuola Normale Superiore Piazza San Silvestro 12, 56127, Pisa, Italy
| | - Valentina Tozzini
- Istituto Nanoscienze, Cnr, Piazza San Silvestro 12, 56127, Pisa, Italy. .,NEST- Scuola Normale Superiore Piazza San Silvestro 12, 56127, Pisa, Italy.
| |
Collapse
|
28
|
Deckert-Gaudig T, Taguchi A, Kawata S, Deckert V. Tip-enhanced Raman spectroscopy - from early developments to recent advances. Chem Soc Rev 2018. [PMID: 28640306 DOI: 10.1039/c7cs00209b] [Citation(s) in RCA: 103] [Impact Index Per Article: 17.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
An analytical technique operating at the nanoscale must be flexible regarding variable experimental conditions while ideally also being highly specific, extremely sensitive, and spatially confined. In this respect, tip-enhanced Raman scattering (TERS) has been demonstrated to be ideally suited to, e.g., elucidating chemical reaction mechanisms, determining the distribution of components and identifying and localizing specific molecular structures at the nanometre scale. TERS combines the specificity of Raman spectroscopy with the high spatial resolution of scanning probe microscopies by utilizing plasmonic nanostructures to confine the incident electromagnetic field and increase it by many orders of magnitude. Consequently, molecular structure information in the optical near field that is inaccessible to other optical microscopy methods can be obtained. In this general review, the development of this still-young technique, from early experiments to recent achievements concerning inorganic, organic, and biological materials, is addressed. Accordingly, the technical developments necessary for stable and reliable AFM- and STM-based TERS experiments, together with the specific properties of the instruments under different conditions, are reviewed. The review also highlights selected experiments illustrating the capabilities of this emerging technique, the number of users of which has steadily increased since its inception in 2000. Finally, an assessment of the frontiers and new concepts of TERS, which aim towards rendering it a general and widely applicable technique that combines the highest possible lateral resolution and extreme sensitivity, is provided.
Collapse
|
29
|
Rojas WY, Winter AD, Grote J, Kim SS, Naik RR, Williams AD, Weiland C, Principe E, Fischer DA, Banerjee S, Prendergast D, Campo EM. Strain and Bond Length Dynamics upon Growth and Transfer of Graphene by NEXAFS Spectroscopy from First-Principles and Experiment. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2018; 34:1783-1794. [PMID: 29286662 DOI: 10.1021/acs.langmuir.7b03260] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
As the quest toward novel materials proceeds, improved characterization technologies are needed. In particular, the atomic thickness in graphene and other 2D materials renders some conventional technologies obsolete. Characterization technologies at wafer level are needed with enough sensitivity to detect strain in order to inform fabrication. In this work, NEXAFS spectroscopy was combined with simulations to predict lattice parameters of graphene grown on copper and further transferred to a variety of substrates. The strains associated with the predicted lattice parameters are in agreement with experimental findings. The approach presented here holds promise to effectively measure strain in graphene and other 2D systems at wafer levels to inform manufacturing environments.
Collapse
Affiliation(s)
- W Y Rojas
- School of Electronic Engineering, Bangor University , Bangor LL57 1UT, United Kingdom
| | - A D Winter
- School of Electronic Engineering, Bangor University , Bangor LL57 1UT, United Kingdom
| | - J Grote
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright-Patterson AFB, Ohio 45433, United States
| | - S S Kim
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright-Patterson AFB, Ohio 45433, United States
| | - R R Naik
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright-Patterson AFB, Ohio 45433, United States
| | - A D Williams
- Materials and Manufacturing Directorate, Air Force Research Laboratory , Wright-Patterson AFB, Ohio 45433, United States
| | - C Weiland
- Synchrotron Research, Inc. , Melbourne, Florida 32901, United States
| | - E Principe
- Synchrotron Research, Inc. , Melbourne, Florida 32901, United States
| | - D A Fischer
- National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States
| | - S Banerjee
- Departments of Chemistry and Materials Science and Engineering, Texas A&M University , College Station, Texas 77842-3012, United States
| | - D Prendergast
- The Molecular Foundry, Materials Science Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
| | - E M Campo
- School of Electronic Engineering, Bangor University , Bangor LL57 1UT, United Kingdom
- Department of Physics and Astronomy, University of Texas at San Antonio , San Antonio, Texas 78249, United States
| |
Collapse
|
30
|
Niu Y, Zakharov A, Yakimova R. Metal-dielectric transition in Sn-intercalated graphene on SiC(0001). Ultramicroscopy 2017; 183:49-54. [DOI: 10.1016/j.ultramic.2017.05.010] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/30/2016] [Revised: 04/13/2017] [Accepted: 05/09/2017] [Indexed: 10/19/2022]
|
31
|
Azpeitia J, Otero-Irurueta G, Palacio I, Martinez JI, del Árbol NR, Santoro G, Gutiérrez A, Aballe L, Foerster M, Kalbac M, Vales V, Mompeán FJ, García-Hernández M, Martín-Gago JA, Munuera C, López MF. High-quality PVD graphene growth by fullerene decomposition on Cu foils. CARBON 2017; 119:535-543. [PMID: 28507390 PMCID: PMC5428744 DOI: 10.1016/j.carbon.2017.04.067] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We present a new protocol to grow large-area, high-quality single-layer graphene on Cu foils at relatively low temperatures. We use C60 molecules evaporated in ultra high vacuum conditions as carbon source. This clean environment results in a strong reduction of oxygen-containing groups as depicted by X-ray photoelectron spectroscopy (XPS). Unzipping of C60 is thermally promoted by annealing the substrate at 800ºC during evaporation. The graphene layer extends over areas larger than the Cu crystallite size, although it is changing its orientation with respect to the surface in the wrinkles and grain boundaries, producing a modulated ring in the low energy electron diffraction (LEED) pattern. This protocol is a self-limiting process leading exclusively to one single graphene layer. Raman spectroscopy confirms the high quality of the grown graphene. This layer exhibits an unperturbed Dirac-cone with a clear n-doping of 0.77 eV, which is caused by the interaction between graphene and substrate. Density functional theory (DFT) calculations show that this interaction can be induced by a coupling between graphene and substrate at specific points of the structure leading to a local sp3 configuration, which also contribute to the D-band in the Raman spectra.
Collapse
Affiliation(s)
- J. Azpeitia
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain
| | - G. Otero-Irurueta
- Center for Mechanical Technology and Automation (TEMA-DEM), University of Aveiro, 3810-193 Aveiro, Portugal
| | - I. Palacio
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain
| | - J. I. Martinez
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain
| | - N. Ruiz del Árbol
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain
| | - G. Santoro
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain
| | - A. Gutiérrez
- Departamento de Física Aplicada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| | - L. Aballe
- ALBA Synchrotron Light Facility, Carrer de la llum 2-26, Cerdanyola del Vallès, Barcelona 08290, Spain
| | - M. Foerster
- ALBA Synchrotron Light Facility, Carrer de la llum 2-26, Cerdanyola del Vallès, Barcelona 08290, Spain
| | - M. Kalbac
- J. Heyrovský Institute of Physical Chemistry, ASCR, v.v.i., Dolejškova 3, CZ-18223 Prague 8, Czech Republic
| | - V. Vales
- J. Heyrovský Institute of Physical Chemistry, ASCR, v.v.i., Dolejškova 3, CZ-18223 Prague 8, Czech Republic
| | - F. J. Mompeán
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain
| | - M. García-Hernández
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain
| | - J. A. Martín-Gago
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain
| | - C. Munuera
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain
| | - M. F. López
- Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Sor Juana Inés de la Cruz 3, E-28049 Madrid, Spain
| |
Collapse
|
32
|
Landois P, Wang T, Nachawaty A, Bayle M, Decams JM, Desrat W, Zahab AA, Jouault B, Paillet M, Contreras S. Growth of low doped monolayer graphene on SiC(0001) via sublimation at low argon pressure. Phys Chem Chem Phys 2017; 19:15833-15841. [PMID: 28585655 DOI: 10.1039/c7cp01012e] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Silicon carbide (SiC) sublimation is the most promising option to achieve transfer-free graphene at the wafer-scale. We investigated the initial growth stages from the buffer layer to monolayer graphene on SiC(0001) as a function of annealing temperature at low argon pressure (10 mbar). A buffer layer, fully covering the SiC substrate, forms when the substrate is annealed at 1600 °C. Graphene formation starts from the step edges of the SiC substrate at higher temperature (1700 °C). The spatial homogeneity of the monolayer graphene was observed at 1750 °C, as characterized by Raman spectroscopy and magneto-transport. Raman spectroscopy mapping indicated an AG-graphene/AG-HOPG ratio of around 3.3%, which is very close to the experimental value reported for a graphene monolayer. Transport measurements from room temperature down to 1.7 K indicated slightly p-doped samples (p ≃ 1010 cm-2) and confirmed both continuity and thickness of the monolayer graphene film. Successive growth processes have confirmed the reproducibility and homogeneity of these monolayer films.
Collapse
Affiliation(s)
- Périne Landois
- Laboratoire Charles Coulomb, UMR 5221, CNRS Université de Montpellier, Place Eugène Bataillon, 34095 Montpellier, France.
| | | | | | | | | | | | | | | | | | | |
Collapse
|
33
|
Recent advances in bioactive 1D and 2D carbon nanomaterials for biomedical applications. NANOMEDICINE-NANOTECHNOLOGY BIOLOGY AND MEDICINE 2017; 14:2433-2454. [PMID: 28552644 DOI: 10.1016/j.nano.2017.03.021] [Citation(s) in RCA: 82] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2016] [Revised: 02/09/2017] [Accepted: 03/06/2017] [Indexed: 12/18/2022]
Abstract
One-dimensional (1D) carbon nanotubes (CNTs) and the two-dimensional (2D) graphene represent the most widely studied allotropes of carbon. Due to their unique structural, electrical, mechanical and optical properties, 1D and 2D carbon nanostructures are considered to be leading candidates for numerous applications in biomedical fields, including tissue engineering, drug delivery, bioimaging and biosensors. The biocompatibility and toxicity issues associated with these nanostructures have been a critical impediment for their use in biomedical applications. In this review, we present an overview of the various materials types, properties, functionalization strategies and characterization methods of 1D and 2D carbon nanomaterials and their derivatives in terms of their biomedical applications. In addition, we discuss various factors and mechanisms affecting their toxicity and biocompatibility.
Collapse
|
34
|
Kumar A, Banerjee K, Liljeroth P. Molecular assembly on two-dimensional materials. NANOTECHNOLOGY 2017; 28:082001. [PMID: 28045007 DOI: 10.1088/1361-6528/aa564f] [Citation(s) in RCA: 50] [Impact Index Per Article: 7.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Molecular self-assembly is a well-known technique to create highly functional nanostructures on surfaces. Self-assembly on two-dimensional (2D) materials is a developing field driven by the interest in functionalization of 2D materials in order to tune their electronic properties. This has resulted in the discovery of several rich and interesting phenomena. Here, we review this progress with an emphasis on the electronic properties of the adsorbates and the substrate in well-defined systems, as unveiled by scanning tunneling microscopy. The review covers three aspects of the self-assembly. The first one focuses on non-covalent self-assembly dealing with site-selectivity due to inherent moiré pattern present on 2D materials grown on substrates. We also see that modification of intermolecular interactions and molecule-substrate interactions influences the assembly drastically and that 2D materials can also be used as a platform to carry out covalent and metal-coordinated assembly. The second part deals with the electronic properties of molecules adsorbed on 2D materials. By virtue of being inert and possessing low density of states near the Fermi level, 2D materials decouple molecules electronically from the underlying metal substrate and allow high-resolution spectroscopy and imaging of molecular orbitals. The moiré pattern on the 2D materials causes site-selective gating and charging of molecules in some cases. The last section covers the effects of self-assembled, acceptor and donor type, organic molecules on the electronic properties of graphene as revealed by spectroscopy and electrical transport measurements. Non-covalent functionalization of 2D materials has already been applied for their application as catalysts and sensors. With the current surge of activity on building van der Waals heterostructures from atomically thin crystals, molecular self-assembly has the potential to add an extra level of flexibility and functionality for applications ranging from flexible electronics and OLEDs to novel electronic devices and spintronics.
Collapse
Affiliation(s)
- Avijit Kumar
- Department of Applied Physics Aalto, University School of Science, PO Box 15100, FI-00076 Aalto, Finland
| | | | | |
Collapse
|
35
|
Choi JH, Cui P, Chen W, Cho JH, Zhang Z. Atomistic mechanisms of van der Waals epitaxy and property optimization of layered materials. WILEY INTERDISCIPLINARY REVIEWS-COMPUTATIONAL MOLECULAR SCIENCE 2017. [DOI: 10.1002/wcms.1300] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Affiliation(s)
- Jin-Ho Choi
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics; University of Science and Technology of China; Hefei China
- Research Institute of Mechanical Technology; Pusan National University; Pusan Korea
| | - Ping Cui
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics; University of Science and Technology of China; Hefei China
| | - Wei Chen
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics; University of Science and Technology of China; Hefei China
- Department of Physics and School of Engineering and Applied Sciences; Harvard University; Cambridge MA USA
| | - Jun-Hyung Cho
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics; University of Science and Technology of China; Hefei China
- Department of Physics and Research Institute for Natural Sciences; Hanyang University; Seoul Korea
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics; University of Science and Technology of China; Hefei China
| |
Collapse
|
36
|
Alnuaimi A, Almansouri I, Saadat I, Nayfeh A. Toward fast growth of large area high quality graphene using a cold-wall CVD reactor. RSC Adv 2017. [DOI: 10.1039/c7ra10336k] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
In this work we provide a detailed analysis on graphene synthesis by Chemical Vapor Deposition (CVD) using a cold wall CVD reactor to achieve fast production of large area high quality graphene.
Collapse
Affiliation(s)
- Aaesha Alnuaimi
- Department of Electrical and Computer Engineering (ECE)
- Masdar Institute
- Khalifa University of Science and Technology
- Abu Dhabi
- United Arab Emirates
| | - Ibraheem Almansouri
- Department of Electrical and Computer Engineering (ECE)
- Masdar Institute
- Khalifa University of Science and Technology
- Abu Dhabi
- United Arab Emirates
| | - Irfan Saadat
- Department of Electrical and Computer Engineering (ECE)
- Masdar Institute
- Khalifa University of Science and Technology
- Abu Dhabi
- United Arab Emirates
| | - Ammar Nayfeh
- Department of Electrical and Computer Engineering (ECE)
- Masdar Institute
- Khalifa University of Science and Technology
- Abu Dhabi
- United Arab Emirates
| |
Collapse
|
37
|
Bao J, Norimatsu W, Iwata H, Matsuda K, Ito T, Kusunoki M. Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique. PHYSICAL REVIEW LETTERS 2016; 117:205501. [PMID: 27886482 DOI: 10.1103/physrevlett.117.205501] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2016] [Indexed: 06/06/2023]
Abstract
Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. We have demonstrated that a graphenelike buffer layer on SiC can be converted to a quasifreestanding monolayer graphene by a rapid-cooling treatment. The decoupling of graphene from the SiC substrate was actually effective for reducing the electric carrier scattering due to interfacial phonons. In addition, the rapidly cooled graphene obtained in this way was of high-quality, strain-free, thermally stable, and strongly hole doped. This simple, classical, but quite novel technique for obtaining quasifreestanding graphene could open a new path towards a viable graphene-based semiconductor industry.
Collapse
Affiliation(s)
- Jianfeng Bao
- Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan
| | - Wataru Norimatsu
- Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
| | - Hiroshi Iwata
- Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
| | - Keita Matsuda
- Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
| | - Takahiro Ito
- Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8603, Japan
| | - Michiko Kusunoki
- Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan
| |
Collapse
|
38
|
dos Santos RB, Mota FDB, Rivelino R, Kakanakova-Georgieva A, Gueorguiev GK. Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties. NANOTECHNOLOGY 2016; 27:145601. [PMID: 26902955 DOI: 10.1088/0957-4484/27/14/145601] [Citation(s) in RCA: 33] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Graphite-like hexagonal AlN (h-AlN) multilayers have been experimentally manifested and theoretically modeled. The development of any functional electronics applications of h-AlN would most certainly require its integration with other layered materials, particularly graphene. Here, by employing vdW-corrected density functional theory calculations, we investigate structure, interaction energy, and electronic properties of van der Waals stacking sequences of few-layer h-AlN with graphene. We find that the presence of a template such as graphene induces enough interlayer charge separation in h-AlN, favoring a graphite-like stacking formation. We also find that the interface dipole, calculated per unit cell of the stacks, tends to increase with the number of stacked layers of h-AlN and graphene.
Collapse
Affiliation(s)
- Renato B dos Santos
- Instituto de Física, Universidade Federal da Bahia, 40210-340 Salvador, Bahia, Brazil. Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
| | | | | | | | | |
Collapse
|
39
|
Lee HM, Perumal S, Cheong IW. Amphiphilic Fluorinated Block Copolymer Synthesized by RAFT Polymerization for Graphene Dispersions. Polymers (Basel) 2016; 8:polym8030101. [PMID: 30979188 PMCID: PMC6432555 DOI: 10.3390/polym8030101] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2016] [Revised: 03/14/2016] [Accepted: 03/16/2016] [Indexed: 11/17/2022] Open
Abstract
Despite the superior properties of graphene, the strong π–π interactions among pristine graphenes yielding massive aggregation impede industrial applications. For non-covalent functionalization of highly-ordered pyrolytic graphite (HOPG), poly(2,2,2-trifluoroethyl methacrylate)-block-poly(4-vinyl pyridine) (PTFEMA-b-PVP) block copolymers were prepared by reversible addition-fragmentation chain transfer (RAFT) polymerization and used as polymeric dispersants in liquid phase exfoliation assisted by ultrasonication. The HOPG graphene concentrations were found to be 0.260–0.385 mg/mL in methanolic graphene dispersions stabilized with 10 wt % (relative to HOPG) PTFEMA-b-PVP block copolymers after one week. Raman and atomic force microscopy (AFM) analyses revealed that HOPG could not be completely exfoliated during the sonication. However, on-line turbidity results confirmed that the dispersion stability of HOPG in the presence of the block copolymer lasted for one week and that longer PTFEMA and PVP blocks led to better graphene dispersibility. Force–distance (F–d) analyses of AFM showed that PVP block is a good graphene-philic block while PTFEMA is methanol-philic.
Collapse
Affiliation(s)
- Hyang Moo Lee
- School of Applied Chemical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea.
| | - Suguna Perumal
- School of Applied Chemical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea.
- Research Institute of Advanced Energy, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea.
| | - In Woo Cheong
- School of Applied Chemical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea.
- Research Institute of Advanced Energy, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea.
- Department of Nano-Science and Technology, Graduate School, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Korea.
| |
Collapse
|
40
|
Notarianni M, Liu J, Vernon K, Motta N. Synthesis and applications of carbon nanomaterials for energy generation and storage. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2016; 7:149-196. [PMID: 26925363 PMCID: PMC4734431 DOI: 10.3762/bjnano.7.17] [Citation(s) in RCA: 31] [Impact Index Per Article: 3.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2015] [Accepted: 12/22/2015] [Indexed: 05/29/2023]
Abstract
The world is facing an energy crisis due to exponential population growth and limited availability of fossil fuels. Over the last 20 years, carbon, one of the most abundant materials found on earth, and its allotrope forms such as fullerenes, carbon nanotubes and graphene have been proposed as sources of energy generation and storage because of their extraordinary properties and ease of production. Various approaches for the synthesis and incorporation of carbon nanomaterials in organic photovoltaics and supercapacitors have been reviewed and discussed in this work, highlighting their benefits as compared to other materials commonly used in these devices. The use of fullerenes, carbon nanotubes and graphene in organic photovoltaics and supercapacitors is described in detail, explaining how their remarkable properties can enhance the efficiency of solar cells and energy storage in supercapacitors. Fullerenes, carbon nanotubes and graphene have all been included in solar cells with interesting results, although a number of problems are still to be overcome in order to achieve high efficiency and stability. However, the flexibility and the low cost of these materials provide the opportunity for many applications such as wearable and disposable electronics or mobile charging. The application of carbon nanotubes and graphene to supercapacitors is also discussed and reviewed in this work. Carbon nanotubes, in combination with graphene, can create a more porous film with extraordinary capacitive performance, paving the way to many practical applications from mobile phones to electric cars. In conclusion, we show that carbon nanomaterials, developed by inexpensive synthesis and process methods such as printing and roll-to-roll techniques, are ideal for the development of flexible devices for energy generation and storage - the key to the portable electronics of the future.
Collapse
Affiliation(s)
- Marco Notarianni
- Institute of Future Environments and School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane QLD 4001, Australia
- Plasma-Therm LLC, 10050 16th St. North, St. Petersburg, FL 33716, USA
| | - Jinzhang Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Kristy Vernon
- Institute of Future Environments and School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane QLD 4001, Australia
| | - Nunzio Motta
- Institute of Future Environments and School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane QLD 4001, Australia
| |
Collapse
|
41
|
Clericò V, Notario JAD, Campos N, Gómez D, Diez E, Velazquez JE, Meziani YM. Terahertz spectroscopy of a multilayers flake of graphene. ACTA ACUST UNITED AC 2015. [DOI: 10.1088/1742-6596/647/1/012040] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
|
42
|
Bansal P, Doshi S, Panwar AS, Bahadur D. Exoelectrogens Leading to Precise Reduction of Graphene Oxide by Flexibly Switching Their Environment during Respiration. ACS APPLIED MATERIALS & INTERFACES 2015; 7:20576-20584. [PMID: 26288348 DOI: 10.1021/acsami.5b04390] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Reduced graphene oxide (RGO) has been prepared by a simple, cost-effective, and green route. In this work, graphene oxide (GO) has been reduced using Gram-negative facultative anaerobe S. dysenteriae, having exogenic properties of electron transfer via electron shuttling. Apparently, different concentrations of GO were successfully reduced with almost complete mass recovery. An effective role of lipopolysaccharide has been observed while comparing RGO reduced by S. dysenteriae and S. aureus. It was observed that the absence of lipopolysaccharide in Gram-positive S. aureus leads to a disrupted cell wall and that S.aureus could not survive in the presence of GO, leading to poor and inefficient reduction of GO, as shown in our results. However, S. dysenteriae having an outer lipopolysaccharide layer on its cell membrane reduced GO efficiently and the reduction process was extracellular for it. RGO prepared in our work has been characterized by X-ray diffraction, ζ potential, X-ray photoelectron spectroscopy, and Raman spectroscopy techniques, and the results were found to be in good agreement with those of chemically reduced GO. As agglomeration of RGO is the major issue to overcome while chemically reducing GO, we observed that RGO prepared by a bacterial route in our work has ζ potential value of -26.62 mV, good enough to avoid restacking of RGO. The role of exoelectrogens in electron transfer in the extracellular space has been depicted. Toxin released extracellularly during the process paves the way for reduction of GO due to its affinity towards oxygen.
Collapse
Affiliation(s)
- Prerna Bansal
- Department of Metallurgical Engineering and Materials Science, IIT Bombay , Mumbai 400076, India
| | - Sejal Doshi
- Department of Metallurgical Engineering and Materials Science, IIT Bombay , Mumbai 400076, India
| | - Ajay S Panwar
- Department of Metallurgical Engineering and Materials Science, IIT Bombay , Mumbai 400076, India
| | - Dhirendra Bahadur
- Department of Metallurgical Engineering and Materials Science, IIT Bombay , Mumbai 400076, India
| |
Collapse
|
43
|
Zhang N, Yang MQ, Liu S, Sun Y, Xu YJ. Waltzing with the Versatile Platform of Graphene to Synthesize Composite Photocatalysts. Chem Rev 2015; 115:10307-77. [DOI: 10.1021/acs.chemrev.5b00267] [Citation(s) in RCA: 929] [Impact Index Per Article: 103.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
Affiliation(s)
- Nan Zhang
- State
Key Laboratory of Photocatalysis on Energy and Environment, College
of Chemistry, Fuzhou University, Fuzhou 350002, P.R. China
- College of Chemistry, New Campus, Fuzhou University, Fuzhou 350108, P.R. China
| | - Min-Quan Yang
- State
Key Laboratory of Photocatalysis on Energy and Environment, College
of Chemistry, Fuzhou University, Fuzhou 350002, P.R. China
- College of Chemistry, New Campus, Fuzhou University, Fuzhou 350108, P.R. China
| | - Siqi Liu
- State
Key Laboratory of Photocatalysis on Energy and Environment, College
of Chemistry, Fuzhou University, Fuzhou 350002, P.R. China
- College of Chemistry, New Campus, Fuzhou University, Fuzhou 350108, P.R. China
| | - Yugang Sun
- Center
for Nanoscale Materials, Argonne National Laboratory, 9700 South
Cass Avenue, Argonne, Illinois 60439, United States
| | - Yi-Jun Xu
- State
Key Laboratory of Photocatalysis on Energy and Environment, College
of Chemistry, Fuzhou University, Fuzhou 350002, P.R. China
- College of Chemistry, New Campus, Fuzhou University, Fuzhou 350108, P.R. China
| |
Collapse
|
44
|
Dedkov Y, Voloshina E. Graphene growth and properties on metal substrates. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2015; 27:303002. [PMID: 26151341 DOI: 10.1088/0953-8984/27/30/303002] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Graphene-metal interface as one of the interesting graphene-based objects attracts much attention from both application and fundamental science points of view. This paper gives a timely review of the recent experimental works on the growth and the electronic properties of the graphene-metal interfaces. This work makes a link between huge amount of experimental and theoretical data allowing one to understand the influence of the metallic substrate on the electronic properties of a graphene overlayer and how its properties can be modified in a controllable way. The further directions of studies and applications of the graphene-metal interfaces are discussed.
Collapse
Affiliation(s)
- Yuriy Dedkov
- SPECS Surface Nano Analysis GmbH, Voltastrasse 5, 13355 Berlin, Germany
| | | |
Collapse
|
45
|
Criado A, Melchionna M, Marchesan S, Prato M. Kovalente Funktionalisierung von Graphen auf Substraten. Angew Chem Int Ed Engl 2015. [DOI: 10.1002/ange.201501473] [Citation(s) in RCA: 25] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
|
46
|
Criado A, Melchionna M, Marchesan S, Prato M. The Covalent Functionalization of Graphene on Substrates. Angew Chem Int Ed Engl 2015; 54:10734-50. [PMID: 26242633 DOI: 10.1002/anie.201501473] [Citation(s) in RCA: 136] [Impact Index Per Article: 15.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/14/2015] [Indexed: 01/10/2023]
Abstract
The utilization of grown or deposited graphene on solid substrates offers key benefits for functionalization processes, but especially to attain structures with a high level of control for electronics and "smart" materials. In this review, we will initially focus on the nature and properties of graphene on substrates, based on the method of preparation. We will then analyze the most relevant literature on the functionalization of graphene on substrates. In particular, we will comparatively discuss radical reactions, cycloadditions, halogenations, hydrogenations, and oxidations. We will especially address the question of how the reactivity of graphene is affected by its morphology (i.e., number of layers, defects, substrate, curvature, etc.).
Collapse
Affiliation(s)
- Alejandro Criado
- Department of Chemical and Pharmaceutical Sciences, University of Trieste, Piazzale Europa 1, 34127 Trieste (Italy).
| | - Michele Melchionna
- Department of Chemical and Pharmaceutical Sciences, University of Trieste, Piazzale Europa 1, 34127 Trieste (Italy)
| | - Silvia Marchesan
- Department of Chemical and Pharmaceutical Sciences, University of Trieste, Piazzale Europa 1, 34127 Trieste (Italy)
| | - Maurizio Prato
- Department of Chemical and Pharmaceutical Sciences, University of Trieste, Piazzale Europa 1, 34127 Trieste (Italy).
| |
Collapse
|
47
|
Zaretski AV, Lipomi DJ. Processes for non-destructive transfer of graphene: widening the bottleneck for industrial scale production. NANOSCALE 2015; 7:9963-9. [PMID: 25924926 DOI: 10.1039/c5nr01777g] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
The exceptional charge-transport, mechanical, and barrier properties of graphene are well known. High-quality films of single-layer graphene produced over large areas, however, are extremely expensive. The high cost of graphene precludes its use in industries-such as transparent electrodes and flexible packaging-that might take full advantage of its properties. This minireview presents several strategies for the transfer of graphene from the substrates used for growth to substrates used for the final application. Each strategy shares the characteristic of being non-destructive: that is, the growth substrate remains reusable for further synthesis of new graphene. These processes have the potential to lower significantly the costs of manufacturing graphene, to increase production yields, and to minimize environmental impact. This article is divided into sections on (i) the synthesis of high-quality single-layer graphene and (ii) its non-destructive transfer to a host substrate. Section (ii) is further divided according to the substrate from which graphene is transferred: single-crystalline wafers or flexible copper foils. We also comment, wherever possible, on defects produced as a result of the transfer, and potential strategies to mitigate these defects. We conclude that several methods for the green synthesis and transfer of graphene have several of the right characteristics to be useful in industrial scale production.
Collapse
Affiliation(s)
- Aliaksandr V Zaretski
- Department of NanoEngineering, University of California, San Diego, 9500 Gilman Drive Mail Code 0448, La Jolla, CA 92093-0448, USA.
| | | |
Collapse
|
48
|
Girek B, Sliwa W. Hybrids of cationic porphyrins with nanocarbons. J INCL PHENOM MACRO 2015; 82:283-300. [PMID: 26167127 PMCID: PMC4491362 DOI: 10.1007/s10847-015-0485-z] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/02/2015] [Accepted: 02/13/2015] [Indexed: 01/09/2023]
Abstract
In the review hybrids of cationic porphyrins (i.e. porphyrins functionalized by quaternary pyridinium groups) with nanocarbons such as fullerenes, carbon nanotubes and graphene are described. Selected examples of these species are characterized in regard of their properties and possible applications.
Collapse
Affiliation(s)
- Beata Girek
- Institute of Chemistry, Environmental Protection and Biotechnology, Jan Długosz University in Czestochowa, Armii Krajowej 13/15, 42-200 Czestochowa, Poland
| | - Wanda Sliwa
- Institute of Chemistry, Environmental Protection and Biotechnology, Jan Długosz University in Czestochowa, Armii Krajowej 13/15, 42-200 Czestochowa, Poland
| |
Collapse
|
49
|
Naguib M, Gogotsi Y. Synthesis of two-dimensional materials by selective extraction. Acc Chem Res 2015; 48:128-35. [PMID: 25489991 DOI: 10.1021/ar500346b] [Citation(s) in RCA: 252] [Impact Index Per Article: 28.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
CONSPECTUS: Two-dimensional (2D) materials have attracted much attention in the past decade. They offer high specific surface area, as well as electronic structure and properties that differ from their bulk counterparts due to the low dimensionality. Graphene is the best known and the most studied 2D material, but metal oxides and hydroxides (including clays), dichalcogenides, boron nitride (BN), and other materials that are one or several atoms thick are receiving increasing attention. They may deliver a combination of properties that cannot be provided by other materials. The most common synthesis approach in general is by reacting different elements or compounds to form a new compound. However, this approach does not necessarily work well for low-dimensional structures, since it favors formation of energetically preferred 3D (bulk) solids. Many 2D materials are produced by exfoliation of van der Waals solids, such as graphite or MoS2, breaking large particles into 2D layers. However, these approaches are not universal; for example, 2D transition metal carbides cannot be produced by any of them. An alternative but less studied way of material synthesis is the selective extraction process, which is based on the difference in reactivity and stability between the different components (elements or structural units) of the original material. It can be achieved using thermal, chemical, or electrochemical processes. Many 2D materials have been synthesized using selective extraction, such as graphene from SiC, transition metal oxides (TMO) from layered 3D salts, and transition metal carbides or carbonitrides (MXenes) from MAX phases. Selective extraction synthesis is critically important when the bonds between the building blocks of the material are too strong (e.g., in carbides) to be broken mechanically in order to form nanostructures. Unlike extractive metallurgy, where the extracted metal is the goal of the process, selective extraction of one or more elements from the precursor materials releases 2D structures. In this Account, in addition to graphene and TMO, we focused on MXenes as an example for the use of selective extraction synthesis to produce novel 2D materials. About 10 new carbides and carbonitrides of transition metals have been produced by this method in the past 3 years. They offer an unusual combination of metallic conductivity and hydrophilicity and show very attractive electrochemical properties. We hope that this Account will encourage researchers to extend the use of selective extraction to other layered material systems that in turn will result in expanding the world of nanomaterials in general and 2D materials in particular, generating new materials that cannot be produced by other means.
Collapse
Affiliation(s)
- Michael Naguib
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37381, United States
| | - Yury Gogotsi
- Department of Materials Science and Engineering and A. J. Drexel Nanomaterials Institute, Drexel University, Philadelphia, Pennsylvania 19104, United States
| |
Collapse
|
50
|
Imamura G, Saiki K. Effect of UV light-induced nitrogen doping on the field effect transistor characteristics of graphene. RSC Adv 2015. [DOI: 10.1039/c5ra12002k] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022] Open
Abstract
Control of electron concentration in graphene is achieved in the range of 1012 to 1013 cm−2 by nitrogen doping using photochemical reactions.
Collapse
Affiliation(s)
- Gaku Imamura
- World Premier International (WPI) Research Center
- International Center for Materials Nanoarchitectonics (MANA)
- National Institute for Materials Science (NIMS)
- Tsukuba
- Japan
| | - Koichiro Saiki
- Department of Complexity Science and Engineering
- Graduate School of Frontier Sciences
- The University of Tokyo
- Kashiwa
- Japan
| |
Collapse
|